Semiconductor module

Abstract

To provide a semiconductor module capable of outputting a signal indicating a temperature to the outside.SOLUTION: A semiconductor module comprises: first and second terminals; a drive circuit which includes n pairs of power source-side first switching elements and ground-side second switching elements; at least one temperature sensor which detects a temperature of at least one switching element in the n pairs of first and second switching elements; a control circuit which controls switching of the n pairs of first and second switching elements; and an output circuit which outputs a signal indicating the temperature via the first and second terminals.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a semiconductor module. [Background technology]

[0002] There are modules including semiconductor chips on which switching elements such as IGBTs (Insulated Gate Bipolar Transistors) and temperature detection diodes are formed (see, for example, Patent Documents 1 to 4). Such modules are generally called IPMs (Intelligent Power Modules) for power conversion devices. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 5862434 [Patent Document 2] International Publication No. 2017 / 169693 [Patent Document 3] Japanese Patent Application Laid-Open No. 2005-166987 [Patent Document 4] Japanese Patent Application Laid-Open No. 2001-133330 Summary of the Invention [Problem to be solved by the invention]

[0004] However, when a current flows through a switching element, the temperature of the switching element rises and the switching element overheats, which can lead to destruction of the switching element. Furthermore, a rise or fall in the temperature of the switching element affects the lifespan of the switching element. Therefore, it is preferable to measure the temperature of the switching element.

[0005] The present invention has been made in view of the above-mentioned problems in the prior art, and an object of the present invention is to provide a semiconductor module that can output a signal indicating a temperature to the outside. [Means for solving the problem]

[0006] The semiconductor module of the present invention that solves the above-mentioned problems is a semiconductor module that includes first and second terminals, a drive circuit including n sets of first switching elements on the power supply side and second switching elements on the ground side, at least one temperature sensor that detects the temperature of at least one of the n sets of first and second switching elements, a control circuit that controls the switching of the n sets of first and second switching elements, and an output circuit that outputs a signal indicative of the temperature via the first and second terminals. [Effects of the Invention]

[0007] According to the present invention, it is possible to provide a semiconductor module that can output a signal indicating a temperature to the outside. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a diagram showing an example of the overall configuration of a power module 1. FIG. [Figure 2] FIG. 2 is a diagram showing an example of the configuration of a temperature detection circuit 9. [Figure 3] FIG. 4 is a diagram illustrating an example of the operation of the temperature detection circuit 9. [Figure 4] 1 is a diagram showing an example of the configuration of a drive circuit 10. FIG. [Figure 5] FIG. 2 is a diagram showing an example of the configuration of a temperature detection circuit 12. [Figure 6] 4 is a diagram illustrating an example of the operation of the temperature detection circuit 12. FIG. [Figure 7] FIG. 2 is a diagram showing an example of the overall configuration of a power module 1a. [Figure 8] 2 is a diagram showing an example of the configuration of a portion of a power module 13. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0009] At least the following matters will become clear from the description of this specification and the accompanying drawings. Preferred embodiments of the present invention will be described below with reference to the drawings. The same or equivalent components, members, etc. shown in each drawing will be designated by the same reference numerals, and duplicate descriptions will be omitted as appropriate. =====This embodiment===== <<<Overall configuration of power module 1>>> FIG. 1 is a block diagram showing the overall configuration of a power module 1 according to this embodiment.

[0010] The power module 1 of this embodiment is a semiconductor module, i.e., an IPM, that drives a three-phase motor 8, which is a load, based on instructions from a microcomputer 2. The power module 1 is configured to include HVICs 3U, 3V, and 3W, LVICs 3X, 3Y, and 3Z, a drive circuit 4, a temperature detection circuit 9, and terminals Tu, Tv, Tw, Tx, Ty, Tz, Tc, Td, P, N, U, V, and W.

[0011] The drive circuit 4 is controlled by HVIC3U, 3V, 3W, and LVIC3X, 3Y, and 3Z, and drives the three-phase motor 8. As will be described in detail later, the HVIC3U, 3V, 3W, and LVIC3X, 3Y, and 3Z control the drive circuit 4 in accordance with drive signals InU, InV, InW, InX, InY, and InZ input via terminals Tu, Tv, Tw, Tx, Ty, and Tz, respectively. The drive circuit 4 is configured to include semiconductor chips 5U, 5V, 5W, 5X, 5Y, and 5Z.

[0012] The semiconductor chip 5U includes a U-phase switching element 6U, which is an element on the power supply voltage Vcc side (i.e., on the power supply side), and a diode 7U for detecting the temperature of the switching element 6U. The switching element 6U applies the power supply voltage Vcc, which is applied to a terminal P, to a three-phase motor 8 via a terminal U.

[0013] Similarly, semiconductor chips 5V, 5W, 5X, 5Y, and 5Z each include switching elements 6V, 6W, 6X, 6Y, and 6Z for each phase (V phase, W phase, X phase, Y phase, and W phase) and temperature detection diodes 7V, 7W, 7X, 7Y, and 7Z. Furthermore, when diodes are used to detect the temperature of each switching element, the temperature of the switching element can be detected with high accuracy.

[0014] Diodes 7U, 7V, 7W, 7X, 7Y, and 7Z correspond to "temperature sensors." Furthermore, hereinafter, switching elements 6U, 6V, 6W, 6X, 6Y, and 6Z will be referred to as "switching elements 6U to 6Z." Similarly, diodes 7U, 7V, 7W, 7X, 7Y, and 7Z will be referred to as "diodes 7U to 7Z."

[0015] Switching elements 6V and 6W apply power supply voltage Vcc to three-phase motor 8 via terminals V and W, respectively, and switching elements 6X, 6Y, and 6Z apply ground voltage to three-phase motor 8 via terminals U, V, and W. Switching elements 6V and 6W are elements on the power supply voltage Vcc side (i.e., power supply side), and switching elements 6X, 6Y, and 6Z are elements on the ground side to which ground voltage is applied from terminal N. Switching elements 6U, 6V, and 6W correspond to "first switching elements," and switching elements 6X, 6Y, and 6Z correspond to "second switching elements."

[0016] In this embodiment, IGBTs are used as the switching elements 6U, 6V, 6W, 6X, 6Y, and 6Z, but they are not limited to IGBTs and may be, for example, bipolar transistors or MOS transistors.

[0017] Furthermore, when the switching elements 6U to 6Z are IGBTs, the switching element 6U and the diode 7U are electrically isolated. Similarly, the switching element 6V and the diode 7V are electrically isolated, and the switching element 6W and the diode 7W are also electrically isolated. Note that "electrically isolated" means, for example, in the case of the switching element 6U and the diode 7U, that the emitter of the switching element 6U and the cathode of the diode 7U are not connected by wiring or the like within the semiconductor chip 5U. The cathodes of the diodes 7U to 7Z are connected to ground.

[0018] Meanwhile, the emitter of switching element 6X and the cathode of diode 7X are connected by a wiring Lx, the emitter of switching element 6Y and the cathode of diode 7Y are connected by a wiring Ly, and the emitter of switching element 6Z and the cathode of diode 7Z are connected by a wiring Lz. The wirings Lx, Ly, and Lz are connected to the ground. Therefore, the cathodes of diodes 7U to 7Z are connected to the ground. For example, the emitter of switching element 6X corresponds to the "ground-side electrode of the second switching element," and the cathode of diode 7X corresponds to the "ground-side electrode of the temperature sensor."

[0019] Each of the HVICs 3U, 3V, and 3W is an integrated circuit (IC) for controlling the switching of the switching elements 6U, 6V, and 6W on the upper arm side of the bridge circuit by the drive signals InU, InV, and InW input from the microcomputer 2.

[0020] LVIC3X, 3Y, 3Z are integrated circuits (ICs) for controlling the switching of switching elements 6X, 6Y, 6Z on the lower arm side of the bridge circuit by drive signals InX, InY, InZ input from the microcomputer 2. HVIC3U and LVIC3X, HVIC3V and LVIC3Y, or HVIC3W and LVIC3Z correspond to a "control circuit."

[0021] The temperature detection circuit 9 detects the temperature of each of the switching elements 6U to 6Z and outputs a signal indicating the temperature to the microcomputer 2. Specifically, the temperature detection circuit 9 supplies currents Iau, Iav, Iaw, Iax, Iay, and Iaz (hereinafter referred to as "Iau to Iaz") to each of the diodes 7U to 7Z.

[0022] Furthermore, the temperature detection circuit 9 detects the forward voltages Vau, Vav, Vaw, Vax, Vay, and Vaz (hereinafter referred to as "Vau-Vaz") of the diodes 7U-7Z as voltages indicating temperature. Based on the detected voltages, the temperature detection circuit 9 outputs a digital signal indicating temperature to the microcomputer 2 via terminals Tc and Td. The forward voltages Vau-Vaz of the diodes 7U-7Z have negative temperature characteristics. For example, in the case of diode 7U, the forward voltage Vau is a voltage applied from the anode to the cathode of diode 7U when current Iau flows through diode 7U. The same is true for diodes 7V-7Z.

[0023] ==Configuration of Temperature Detection Circuit 9== 2 is a diagram showing an example of the configuration of the temperature detection circuit 9. The temperature detection circuit 9 includes a current source 100, multiplexers 101 and 102, and a transmission circuit 103.

[0024] The current source 100 generates a predetermined current Ib. The multiplexer 101 selects each of the diodes 7U-7Z in response to the signal Ctrl and supplies the predetermined current Ib as each of the currents Iau-Iaz. Specifically, when the signal Ctrl indicates "0", the multiplexer 101 supplies the predetermined current Ib to the diode 7U as the current Iau.

[0025] Similarly, when the signal Ctrl indicates "1," "2," "3," "4," or "5," the multiplexer 101 supplies the predetermined current Ib as each of the currents Iav to Iaz. The currents Iav to Iaz are supplied to the diodes 7V to 7Z, respectively. The multiplexer 101 corresponds to a "second selection circuit."

[0026] The multiplexer 102 outputs one of the forward voltages Vau to Vaz of the diodes 7U to 7Z as the voltage Vsel in accordance with the signal Ctrl. Specifically, when the signal Ctrl indicates "0," the multiplexer 102 outputs the forward voltage Vau as the voltage Vsel. Similarly, when the signal Ctrl indicates "1," "2," "3," "4," or "5," the multiplexer 102 selects one of the forward voltages Vav to Vaz and outputs it as the voltage Vsel. The multiplexer 102 corresponds to a "first selection circuit."

[0027] The transmission circuit 103 transmits a signal indicating the temperature based on the voltage Vsel. Specifically, the transmission circuit 103 amplifies the voltage Vsel, converts it into digital value data, processes the data, and outputs it as a signal indicating the temperature to the microcomputer 2 via terminals Tc and Td. The transmission circuit 103 includes an amplifier circuit 200, an analog-to-digital conversion (ADC) circuit 201, a control circuit 202, and a processing circuit 203.

[0028] The amplifier circuit 200 amplifies the voltage Vsel and outputs it as a voltage Vb. The analog-to-digital converter circuit 201 converts the voltage Vb into a digital value data based on a signal start from the control circuit 202. The analog-to-digital converter circuit 201 also converts the voltage Vb into a digital value at a frequency that is, for example, at least twice the switching frequency of the switching elements 6U and 6X.

[0029] The control circuit 202 also outputs the signal Ctrl, changing it from "0" to "5" at predetermined intervals. The processing circuit 203 processes the digital value data from the analog-to-digital conversion circuit 201 and outputs it via terminals Tc and Td.

[0030] In this embodiment, the temperature detection circuit 9 configures an I2C interface that outputs the signal SDA via the terminal Td based on the clock signal SCL at the terminal Tc, but the interface is not limited to this as long as it is configured with a small number of terminals. The terminal Tc corresponds to the "first terminal," the terminal Td corresponds to the "second terminal," and the temperature detection circuit 9 corresponds to the "output circuit."

[0031] Furthermore, in this embodiment, the processing circuit 203 sequentially outputs signals indicating, for example, the temperatures of the switching elements 6U to 6Z based on the digital value data. Furthermore, the processing circuit 203 may output, for example, a signal indicating the average value of the temperatures of the switching elements 6U to 6Z based on the digital value data. Furthermore, the processing circuit 203 may output, for example, a signal indicating the maximum value of the temperatures of the switching elements 6U to 6Z based on the digital value data.

[0032] ==Operation of Temperature Detection Circuit 9== Fig. 3 is a diagram showing an example of the operation of the temperature detection circuit 9. Note that the temporal relationship between the clock signal SCL and the signal SDA in Fig. 3 is a conceptual relationship.

[0033] At time t0, when the control circuit 202 outputs a signal Ctrl indicating "0," the multiplexer 101 causes the current Ib from the current source 100 to flow as a current Iau to the diode 7U in order to measure the temperature of the switching element 6U. When the current Iau flows through the diode 7U, a forward voltage Vau is generated across the diode 7U. Because the control circuit 202 is outputting a signal Ctrl indicating "0," the multiplexer 102 outputs the voltage Vau to the transmission circuit 103 as a voltage Vsel. The amplifier circuit 200 amplifies the voltage Vsel and outputs it as a voltage Vb.

[0034] At time t1 when the voltage Vb becomes stable, the control circuit 202 outputs a signal start to the analog-to-digital conversion circuit 201 to convert the voltage Vb into a digital value data. The analog-to-digital conversion circuit 201 starts the conversion operation.

[0035] At time t2 when the conversion by the analog-to-digital converter 201 is completed, the analog-to-digital converter 201 outputs the digital value "data0" as the digital value data. The processing circuit 203 starts processing the digital value "data0".

[0036] At time t3 when the processing of the digital value "data0" by the processing circuit 203 is completed, the processing circuit 203 outputs the digital value "data0" as the signal SDA via the terminal Td based on the clock signal SCL at the terminal Tc.

[0037] After time t4, the switching element for measuring the temperature is sequentially changed to switching elements 6V to 6Z, and the same operation is repeated. In this way, by outputting a signal indicating the temperature via terminals Tc and Td, the number of terminals required for power module 1 can be reduced.

[0038] In the present embodiment, the processing circuit 203 sequentially outputs signals indicating the temperatures of the switching elements 6U to 6Z based on the digital value data. However, the processing circuit 203 may perform other processing (averaging or maximum value detection) and output a signal (e.g., a signal indicating the average value or maximum value) obtained by processing the digital value data based on the clock signal SCL at the terminal Tc as the signal SDA via the terminal Td. Furthermore, the order in which the temperatures of the switching elements are measured is not limited to the order shown in the present embodiment.

[0039] === Variations === ==Configuration of drive circuit 10== 4 is a diagram showing an example of the configuration of a modified driving circuit 10. In the driving circuit 10, a resistor made of polysilicon is used as an element for measuring the temperature of the switching element.

[0040] Specifically, the semiconductor chip 5U is composed of a switching element 6U and a resistor 11U. The same is true for the semiconductor chips 5V to 5Z. The resistors 11U, 11V, 11W, 11X, 11Y, and 11Z are made of polysilicon.

[0041] The switching element 6U and the resistor 11U are electrically isolated from each other. The same applies to the switching element 6V and the resistor 11V, and the switching element 6W and the resistor 11W. For example, when a current Iau flows through the resistor 11U, the voltage Vau generated across the resistor 11U has a positive temperature characteristic.

[0042] Furthermore, for example, when resistor 11U is used, the temperature detection accuracy is lower than when diode 7U is used. However, for example, when switching element 6U and resistor 11U are fabricated on semiconductor chip 5U, they can be electrically isolated by a thin oxide film compared to when diode 7U is fabricated together with switching element 6U. This makes it easier to fabricate semiconductor chip 5U. Note that "electrically isolated" here means, for example, in the case of switching element 6U and resistor 11U, that the emitter of switching element 6U and resistor 11U are not connected by wiring or the like within semiconductor chip 5U.

[0043] ==Configuration of temperature detection circuit 12== 5 is a diagram showing an example of the configuration of the temperature detection circuit 12. In this embodiment, an example has been shown in which the temperature detection circuit 9 forms an I2C interface that outputs a signal SDA via a terminal Td based on a clock signal SCL at a terminal Tc. However, an analog signal may be output while keeping the number of terminals the same.

[0044] The temperature detection circuit 12 outputs, for example, the forward voltage Vau of the diode 7U as an analog value. Specifically, the temperature detection circuit 12 supplies currents Iau to Iaz to the diodes 7U, 7V, 7W, 7X, 7Y, and 7Z, respectively.

[0045] Furthermore, the temperature detection circuit 12 detects the forward voltages Vau to Vaz of the diodes 7U to 7Z as voltages indicating temperature. Then, the temperature detection circuit 12 outputs the detected voltage as an analog signal indicating temperature to the microcomputer 2 via the terminal Td. Then, the temperature detection circuit 12 outputs, via the terminal Tc, an analog voltage Vch indicating which of the switching elements 6U to 6Z is outputting an analog signal indicating the temperature at the terminal Td.

[0046] The temperature detection circuit 12 includes a current source 100, multiplexers 101 and 102, an amplifier circuit 200, a control circuit 104, and a voltage output circuit 105. The control circuit 104 outputs a signal Ctrl, changing it from "0" to "5" at predetermined intervals. The amplifier circuit 200 outputs a voltage Vb to the microcomputer 2 via a terminal Td.

[0047] The voltage output circuit 105 outputs, via the terminal Tc, an analog voltage Vch that indicates which of the switching elements 6U to 6Z has output an analog signal indicating its temperature at the terminal Td in response to the signal Ctrl. This allows the output of a signal indicating the temperature of the switching elements 6U to 6Z even when the number of terminals is small.

[0048] ==Operation of Temperature Detection Circuit 12== 6 is a diagram showing an example of the operation of the temperature detection circuit 12. At time t10, when the control circuit 104 outputs a signal Ctrl indicating "0", the multiplexer 101 supplies the current Ib from the current source 100 to the diode 7U as a current Iau in order to measure the temperature of the switching element 6U.

[0049] When current Iau flows through diode 7U, a forward voltage Vau is generated across diode 7U, and because control circuit 104 outputs signal Ctrl indicating "0," multiplexer 102 outputs voltage Vau as voltage Vsel to amplifier circuit 200. Amplifier circuit 200 also amplifies voltage Vsel and outputs it as voltage Vb via terminal Td. Voltage output circuit 105 also outputs voltage Vch, which indicates that an analog signal Vb indicating the temperature of switching element 6U should be output.

[0050] At time t11, voltage Vch and analog signal Vb become stable. Therefore, from time t11 onwards, the microcomputer 2 can detect the temperature of switching element 6U by detecting voltage Vch and analog signal Vb. Similar operations are repeated from time t12 onwards. As a result, even if an analog voltage is output to terminals Tc and Td, the temperatures of switching elements 6U to 6Z can be output from temperature detection circuit 12 to the microcomputer 2.

[0051] 7 is a diagram showing an example of the overall configuration of the power module 1a. The power module 1a includes HVICs 3U, 3V, and 3W, LVICs 3X, 3Y, and 3Z, a drive circuit 4a, a temperature detection circuit 9a, and terminals Tu, Tv, Tw, Tx, Ty, Tz, Tc, Td, P, N, U, V, and W.

[0052] The drive circuit 4a is controlled by the HVICs 3U, 3V, and 3W and the LVICs 3X, 3Y, and 3Z, and drives the three-phase motor 8. The drive circuit 4a is configured to include semiconductor chips 5U, 5V, 5W, 5aX, 5aY, and 5aZ.

[0053] Unlike the drive circuit 4, the semiconductor chips 5aX, 5aY, and 5aZ do not include diodes 7X, 7Y, and 7Z for detecting temperature.

[0054] Temperature detection circuit 9a detects the temperature of each of switching elements 6U to 6W and outputs a signal indicating the temperature to microcomputer 2. Specifically, temperature detection circuit 9a supplies currents Iau, Iav, and Iaw to diodes 7U to 7W, respectively.

[0055] Furthermore, the temperature detection circuit 9a detects the forward voltages Vau, Vav, and Vaw of the diodes 7U to 7W as voltages indicating temperature. In this way, even if not all semiconductor chips are equipped with temperature detection elements and only the temperatures of some switching elements are detected, it is possible to detect breakdown and the end of life of the switching elements. Note that, although the semiconductor chips 5U, 5V, and 5W in FIG. 7 include temperature detection diodes, for example, only the semiconductor chip 5U may include a temperature detection diode.

[0056] ===Comparative Example=== 8 is a diagram showing an example of the configuration of a portion of a power module 13, which is a comparative example. The power module 13 includes HVICs 3U, 3V, and 3W, LVICs 3X, 3Y, and 3Z, a drive circuit 14, temperature detection circuits 15 and 16, and terminals Tu, Tv, Tw, Tx, Ty, Tz, Tc, Td, P, N, U, V, and W.

[0057] In the drive circuit 14, the emitter of the switching element 6U is connected to the cathode of the diode 7U. The same applies to the switching element 6V and the diode 7V, and the switching element 6W and the diode 7W.

[0058] Furthermore, temperature detection circuit 15 needs to detect forward voltage Vau of diode 7U to measure the temperature of switching element 6U. Therefore, temperature detection circuit 15 needs to use voltage Vu applied to terminal U as a reference voltage, and needs to be provided separately from temperature detection circuit 15 that detects the temperatures of switching elements 6X, 6Y, and 6Z.

[0059] The same is true for switching elements 6V and 6W, so a total of three temperature detection circuits are required, one for each of switching elements 6U, 6V, and 6W, and one temperature detection circuit is also required to detect the temperatures of switching elements 6X, 6Y, and 6Z. Temperature detection circuit 16 receives signal St from the temperature detection circuits that detect the temperatures of switching elements 6U, 6V, and 6W, and outputs signals indicative of the temperatures via terminals Tc and Td.

[0060] For example, when the emitter of switching element 6U and the cathode of diode 7U are connected as in the comparative example, many temperature detection circuits are required to measure the temperatures of the respective switching elements. On the other hand, when the emitter of switching element 6U and the cathode of diode 7U are electrically separated as in the present embodiment, the temperatures of switching elements 6U to 6Z can be measured using only temperature detection circuit 9.

[0061] =====Summary===== The above describes the power module 1 according to one embodiment of the present invention. The power module 1 includes terminals Tc and Td, a drive circuit 4, diodes 7U to 7Z, HVICs 3U, 3V, and 3W, LVICs 3X, 3Y, and 3Z, and a temperature detection circuit 9. This makes it possible to provide a semiconductor module that can output a signal indicating temperature to the outside.

[0062] Furthermore, the temperature detection circuit 9 outputs the signal SDA via the terminal Td based on the clock signal SCL at the terminal Tc, thereby reducing the influence of noise from other circuits (e.g., the HVIC 3U, the LVIC 3X, the drive circuit 4, etc.) in the power module 1 on the signal SDA, which is a digital signal.

[0063] Furthermore, the temperature detection circuit 9 includes a multiplexer 102 and a transmission circuit 103. This allows the temperatures of the switching elements 6U to 6Z to be measured, and also allows the circuit scale of the temperature detection circuit 9 to be reduced.

[0064] Furthermore, the temperature detection circuit 9 includes a current source 100 and a multiplexer 101. This allows the current source 100 alone to supply current to the diodes 7U to 7Z, and also allows the circuit scale of the temperature detection circuit 9 to be reduced.

[0065] Furthermore, the transmission circuit 103 includes an amplifier circuit 200, an analog-to-digital conversion circuit 201, and a processing circuit 203. The analog-to-digital conversion circuit 201 converts the voltage Vb into a digital value at a frequency that is, for example, at least twice the switching frequency of the switching elements 6U, 6X. This allows the temperatures of the switching elements 6U to 6Z to be measured accurately in accordance with the switching frequencies of the switching elements 6U to 6Z.

[0066] Furthermore, switching element 6U and diode 7U are electrically isolated from each other. The same is true for switching element 6V and diode 7V, and switching element 6V and diode 7V. This allows the temperatures of switching elements 6U to 6Z to be measured using temperature detection circuit 9 alone.

[0067] The power module 1 also includes wirings Lx, Ly, and Lz, which allows the same semiconductor chips as the semiconductor chips 5U, 5V, and 5W to be used for the semiconductor chips 5X, 5Y, and 5Z, thereby reducing the manufacturing cost of the power module 1.

[0068] Furthermore, for example, if the diode 7U is used as a temperature sensor to measure the temperature of the switching element 6U, the temperature can be measured with high accuracy.

[0069] Furthermore, for example, if the resistor 11U is used as a temperature sensor to measure the temperature of the switching element 6U, the oxide film for electrically isolating the switching element 6U and the resistor 11U can be made thinner.

[0070] The above-described embodiments are intended to facilitate understanding of the present invention and are not intended to limit the present invention. Furthermore, the present invention may be modified or improved without departing from the spirit thereof, and the present invention includes equivalents thereof. [Explanation of symbols]

[0071] 1,13 Power module 2 Microcomputer 3U, 3V, 3W HVIC 3X, 3Y, 3Z LVIC 4, 4a, 10, 14 Drive circuit 5U, 5V, 5W, 5X, 5Y, 5Z, 5aX, 5aY, 5aZ semiconductor chips 6U, 6V, 6W, 6X, 6Y, 6Z, 6aX, 6aY, 6aZ Switching elements 7U, 7V, 7W, 7X, 7Y, 7Z diodes 8 Three-phase motor 9, 9a, 12, 15, 16 Temperature detection circuit 11U,11V,11W,11X,11Y,11Z Resistor 100 current source 101,102 Multiplexer 103 Transmitting circuit 104,202 Control circuit 105 Voltage output circuit 200 Amplifier Circuit 201 Analog-to-Digital Conversion Circuit 203 Processing Circuit

Claims

1. First and second terminals; a drive circuit including n sets of first switching elements on the power supply side and second switching elements on the ground side; at least one temperature sensor that detects the temperature of at least one of the n sets of first and second switching elements; a control circuit for controlling switching of the n sets of first and second switching elements; an output circuit that outputs a signal indicating the temperature via the first and second terminals; A semiconductor module comprising:

2. 2. The semiconductor module according to claim 1, The output circuit outputting the signal via the second terminal based on the clock signal of the first terminal; Semiconductor module.

3. 3. The semiconductor module according to claim 2, a plurality of the temperature sensors; The output circuit a first selection circuit that sequentially selects the outputs of the plurality of temperature sensors; a transmitting circuit that transmits the signal based on the selection result of the selecting circuit; A semiconductor module comprising:

4. 4. The semiconductor module according to claim 3, The output circuit a current source that generates a predetermined current; a second selection circuit that sequentially selects each of the plurality of temperature sensors so that the predetermined current is supplied to each of the plurality of temperature sensors; A semiconductor module comprising:

5. 5. The semiconductor module according to claim 4, The transmission circuit an amplifier circuit that amplifies the selection result; an analog-to-digital conversion circuit that converts the output of the amplifier circuit into a digital value; a processing circuit that processes the signal based on an output from the analog-to-digital conversion circuit; and The analog-to-digital conversion circuit converting the output of the amplifier circuit into the digital value at a frequency that is at least twice the switching frequency of the first and second switching elements; Semiconductor module.

6. The semiconductor module according to any one of claims 1 to 5, the first switching element and the temperature sensor that detects the temperature of the first switching element are electrically separated from each other; Semiconductor module.

7. 7. The semiconductor module according to claim 6, a wiring connecting a ground-side electrode of the second switching element and a ground-side electrode of the temperature sensor that detects the temperature of the second switching element; Semiconductor module.

8. 8. The semiconductor module according to claim 7, the temperature sensor is a diode; Semiconductor module.

9. 8. The semiconductor module according to claim 7, The temperature sensor is a resistor formed of polysilicon. Semiconductor module.

Images