Physical quantity detection device and manufacturing method of physical quantity detection device

Abstract

To provide a physical quantity detection device and the like, capable of individually measuring detection signals and improving the sensitivity of a detection arm.SOLUTION: A physical quantity detection device 1 includes a physical quantity detection element 10, a support substrate 30, and a circuit device 20. The physical quantity detection element 10 includes a first detection arm having a first detection electrode and a second detection electrode, and a second detection arm having a third detection electrode and a fourth detection electrode. A detection circuit 110 of the circuit device 20 includes: a first amplifier circuit 121 receiving a first detection signal and a fourth detection signal from the first detection electrode and the fourth detection electrode; and a second amplifier circuit 122 receiving a third detection signal and a second detection signal from the third detection electrode and the second detection electrode. The support substrate 30 includes a first wire, a second wire, a third wire and a fourth wire respectively connected to the first detection electrode, the second detection electrode, the third detection electrode and the fourth detection electrode. In the support substrate 30, the second wire is connected to ground in inspection and connected to the third wire in operation while the fourth wire is connected to ground in inspection and connected to the first wire in operation.SELECTED DRAWING: Figure 8

Description

[Technical Field]

[0001] The present invention relates to a physical quantity detection device and a method for manufacturing the physical quantity detection device. [Background technology]

[0002] Patent Document 1 discloses a physical quantity detection device in which one of the positive and negative electrodes of the detection arm is not grounded, and detection signals from both the positive and negative electrodes are input to a detection circuit, thereby improving detection sensitivity. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-184124 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the physical quantity detection device of Patent Document 1, the first detection electrode of the first detection arm and the fourth detection electrode of the second detection arm are electrically connected to input the detection signal from the first detection electrode of the first detection arm and the detection signal from the fourth detection electrode of the second detection arm to the first amplifier circuit. Furthermore, the second detection electrode of the first detection arm and the third detection electrode of the second detection arm are electrically connected to input the detection signal from the second detection electrode of the first detection arm and the detection signal from the third detection electrode of the second detection arm to the second amplifier circuit. Therefore, it is not possible to determine whether the unwanted signal originates from the first detection arm or the second detection arm, and therefore it is not possible to measure the vibration characteristics of the first detection arm and the second detection arm individually. This makes it difficult to achieve appropriate balance tuning, making it difficult to improve the performance of the physical quantity detection device. [Means for solving the problem]

[0005] One aspect of the present disclosure includes a circuit device having a physical quantity detection element having a plurality of detection arms, a plurality of drive arms, and a base portion; a support substrate that supports the physical quantity detection element at the base portion; and a detection circuit that detects a physical quantity based on a plurality of detection signals from the plurality of detection arms of the physical quantity detection element, wherein the plurality of detection arms of the physical quantity detection element include a first detection arm having a first detection electrode and a second detection electrode and extending from the base portion, and a second detection arm having a third detection electrode and a fourth detection electrode and extending from the base portion in an opposite direction to the first detection arm, and the detection circuit of the circuit device, during operation, detects a first detection signal from the first detection electrode and a fourth detection signal from the fourth detection electrode. is input to a first input node, and a third detection signal from the third detection electrode and a second detection signal from the second detection electrode are input to a second input node, the support substrate includes a first wiring having one end connected to the first detection electrode, a second wiring having one end connected to the second detection electrode, a third wiring having one end connected to the third detection electrode, and a fourth wiring having one end connected to the fourth detection electrode, the second wiring being connected to ground on the support substrate during inspection and connected to the third wiring during operation, and the fourth wiring being connected to ground on the support substrate during inspection and connected to the first wiring during operation.

[0006] Another aspect of the present disclosure is a manufacturing method for a physical quantity detection device including: a physical quantity detection element having a plurality of detection arms, a plurality of drive arms, and a base; a support substrate that supports the physical quantity detection element at the base; and a detection circuit that detects a physical quantity based on a plurality of detection signals from the plurality of detection arms of the physical quantity detection element, wherein the physical quantity detection element includes, as the plurality of detection arms, a first detection arm having a first detection electrode and a second detection electrode and extending from the base; and a second detection arm having a third detection electrode and a fourth detection electrode and extending from the base in an opposite direction to the first detection arm, and the detection circuit of the circuit device is configured such that, during operation, a first detection signal from the first detection electrode and a fourth detection signal from the fourth detection electrode are input to a first input node, and a third detection signal from the third detection electrode is input to a second input node. the physical quantity detection element includes an amplifier circuit having a second input node to which a detection signal and a second detection signal from the second detection electrode are input, and the support substrate includes a first wiring having one end connected to the first detection electrode, a second wiring having one end connected to the second detection electrode, a third wiring having one end connected to the third detection electrode, and a fourth wiring having one end connected to the fourth detection electrode, and the manufacturing method includes: a first step of preparing the physical quantity detection element and the support substrate; a second step of attaching the physical quantity detection element to the support substrate; a third step of adjusting at least one of the plurality of drive arms; a fourth step of disconnecting the second wiring from ground and the fourth wiring from ground; and a fifth step of connecting the second wiring to the third wiring and connecting the fourth wiring to the first wiring. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a cross-sectional view showing an example of the configuration of a physical quantity detection device according to an embodiment of the present invention. [Figure 2] FIG. 3 is a diagram illustrating the operation of the physical quantity detection element. [Figure 3] 1 shows an example of the configuration of a circuit device. [Figure 4] FIG. [Figure 5] FIG. 4 is a signal waveform diagram illustrating the operation of the amplifier circuit. [Figure 6] FIG. [Figure 7]FIG. [Figure 8] FIG. [Figure 9] FIG. [Figure 10] FIG. 4 is a plan view of the support substrate as viewed from the bottom side. [Figure 11] FIG. 4 is a diagram schematically showing wiring connections during inspection. [Figure 12] FIG. 4 is a diagram schematically showing wiring connections during operation. [Figure 13] FIG. 10 is a plan view of the support substrate of the second wiring example as seen from the top side. [Figure 14] FIG. 10 is a plan view of the support substrate of the second wiring example as seen from the bottom side. [Figure 15] FIG. 10 is a diagram schematically showing wiring connections in the second wiring example during inspection. [Figure 16] FIG. 10 is a diagram schematically illustrating wiring connections in the second wiring example during operation. [Figure 17] An explanatory diagram of the cutting marks. [Figure 18] 10A and 10B are explanatory diagrams illustrating the layout relationship between the cutting traces, the pads, the physical quantity detection elements, and the circuit device. [Figure 19] 10 is a flowchart showing a method for manufacturing a physical quantity detection device. DETAILED DESCRIPTION OF THE INVENTION

[0008] The present embodiment will be described below. Note that the present embodiment described below does not unduly limit the content of the claims. Furthermore, not all of the configurations described in the present embodiment are necessarily essential components.

[0009] 1. Physical quantity detection device FIG. 1 is a cross-sectional view showing an example of the configuration of a physical quantity detection device 1 according to this embodiment. As shown in FIG. 1, the physical quantity detection device 1 according to this embodiment includes a physical quantity detection element 10, a support substrate 30 supporting the physical quantity detection element 10, and a circuit device 20. The physical quantity detection device 1 may also include a package 4 accommodating the physical quantity detection element 10, the support substrate 30, and the circuit device 20. The physical quantity detection device 1 is not limited to the configuration shown in FIG. 1 , and various modifications are possible, such as omitting some of the components or adding other components. In this embodiment, as shown in FIG. 1, directions perpendicular to each other are designated as directions DR1 and DR2, and a direction perpendicular to directions DR1 and DR2 is designated as direction DR3. The directions DR1, DR2, and DR3 are the first direction, second direction, and third direction, respectively. The tip of the arrow in each of the directions DR1, DR2, and DR3 is also referred to as the plus side, and the opposite side is also referred to as the minus side. FIG. 1 is a side view of the physical quantity detection device 1 as viewed in direction DR2.

[0010] The physical quantity detection element 10 is an element for detecting a physical quantity and can be referred to as, for example, a physical quantity transducer or a vibration element. The physical quantity detection element has, for example, a vibrating element, and the physical quantity is detected using the vibration of this vibrating element. For example, if the physical quantity detection element is a gyro sensor element, angular velocity is detected as the physical quantity. Examples of gyro sensor elements include sensor elements having a piezoelectric vibrating element formed from a thin plate of a piezoelectric material such as quartz. Specifically, the gyro sensor element is a sensor element having a vibrating element such as a double T-shaped, tuning fork-shaped, or H-shaped vibrating element formed from a quartz substrate such as a Z-cut. Alternatively, a MEMS (Micro Electro Mechanical Systems) type sensor element may be used as the gyro sensor element. Furthermore, the physical quantity detected by the physical quantity detection element may be a physical quantity other than angular velocity, such as angular acceleration, angle, acceleration, velocity, movement distance, or pressure.

[0011] The package 4 has a base 2 and a lid 3. Specifically, the package 4 includes the base 2 having a recess 9 that opens upward, and the lid 3 bonded to the upper surface of the base 2 so as to form an accommodation space S between the base 2 and the lid 3. The base 2 and the lid 3 are bonded together by bonding members 5A and 5B, for example. For example, the base 2 can be made of a ceramic such as alumina, and the lid 3 can be made of a metal material such as Kovar. However, the materials of the base 2 and the lid 3 are not limited to these.

[0012] An opening in the base 2 forms a storage space S inside the package 4, and the physical quantity detection element 10, the support substrate 30, and the circuit device 20 are housed in this storage space S. The storage space S, which is the internal space, is airtight and is in a reduced pressure state, preferably a state closer to a vacuum. This reduces viscous resistance and improves the vibration characteristics of the physical quantity detection element 10. However, the atmosphere in the storage space S is not particularly limited, and may be, for example, atmospheric pressure or a pressurized state. Furthermore, the package 4 is only required to have at least the base 2, and may not have a lid 3.

[0013] The recess 9 of the base 2 is composed of a plurality of recesses. For example, the recess 9 has a recess 9A that opens to the top surface of the base 2, a recess 9B that opens to the bottom surface of the recess 9A and has a smaller opening width than the recess 9A, and a recess 9C that opens to the bottom surface of the recess 9B and has a smaller opening width than the recess 9B. A support substrate 30 is fixed to the bottom surface of the recess 9A in a state where the physical quantity detection element 10 is supported. The bottom surface of this recess 9A has a step portion. A circuit device 20 is fixed to the bottom surface of the recess 9C.

[0014] 1, in the accommodation space S, the physical quantity detection element 10, the support substrate 30, and the circuit device 20 are arranged to overlap each other in a plan view. For example, the physical quantity detection element 10, the support substrate 30, and the circuit device 20 are arranged side by side along a direction DR3. For example, the support substrate 30 has, as its main surfaces, a surface SF1 which is a first surface and a surface SF2 which is a second surface. The physical quantity detection element 10 is arranged on the surface SF1 side of the support substrate 30. The circuit device 20 is arranged on the surface SF2 of the support substrate 30.

[0015] The arrangement of the physical quantity detection element 10, the support substrate 30, and the circuit device 20 is not limited to that shown in Fig. 1. For example, in Fig. 1, the support substrate 30 is arranged between the physical quantity detection element 10 and the circuit device 20, but the physical quantity detection element 10 may be arranged between the support substrate 30 and the circuit device 20. Furthermore, in Fig. 1, the physical quantity detection element 10, the support substrate 30, and the circuit device 20 are arranged in this order from the top surface side of the package 4, but the arrangement may also be in the order of the circuit device 20, the support substrate 30, and the physical quantity detection element 10 from the top surface side of the package 4.

[0016] As shown in FIG. 1 , a plurality of internal terminals 6A and 6B are arranged on a stepped portion on the bottom surface of the recess 9A of the base 2. A plurality of internal terminals 7A and 7B are also arranged on a stepped portion on the bottom surface of the recess 9B of the base 2. A plurality of external terminals 8A and 8B are arranged on the underside of the base 2. The internal terminals 6A and 6B, the internal terminals 7A and 7B, and the external terminals 8A and 8B are electrically connected via internal wiring (not shown). The internal terminals 6A and 6B are electrically connected to the physical quantity detection element 10 via conductive bonding members B1 and B2 and a support substrate 30. The internal terminals 7A and 7B are electrically connected to the circuit device 20 via bonding wires BW.

[0017] The conductive bonding members B1 and B2 are members that have both conductivity and bonding properties. The conductive bonding members B1 and B2 are not particularly limited, but may be conductive adhesives in which conductive fillers such as silver fillers are dispersed in various adhesives such as polyimide, epoxy, silicone, or acrylic adhesives, or various metal bumps such as gold bumps, silver bumps, copper bumps, or solder bumps.

[0018] For example, in this embodiment, a conductive adhesive, specifically a thermosetting adhesive, is used as the bonding member B1 between the support substrate 30 and the base 2 of the package 4. Metal bumps are used as the bonding members B2 between the support substrate 30 and the physical quantity detection element 10. By using a conductive adhesive as the bonding member B1 that bonds the support substrate 30 and the base 2, which are made of different materials, the bonding member B1 can absorb and alleviate thermal stress caused by the difference in thermal expansion coefficients between them. Meanwhile, because the support substrate 30 and the physical quantity detection element 10 are bonded by multiple bonding members B2 arranged in a relatively narrow area, using metal bumps as the bonding members B2 suppresses the wetting and spreading that occurs with a conductive adhesive and effectively prevents contact between the bonding members B2.

[0019] 2 is a diagram illustrating an example of the operation of the physical quantity detection element 10. Note that the following description will be primarily based on an example in which the physical quantity detection element 10 is a gyro sensor element, specifically a double-T shaped gyro sensor element. However, as described above, the physical quantity detection element 10 may be a gyro sensor element other than a double-T shaped gyro sensor element, or a physical quantity detection element other than a gyro sensor element.

[0020] For example, if the Z axis is the thickness direction of the physical quantity detection element 10, the physical quantity detection element 10, which is a gyro sensor element, detects an angular velocity ω around the Z axis. The X axis and Y axis are coordinate axes that are orthogonal to the Z axis, and the X axis and the Y axis are orthogonal to each other. For example, by arranging the physical quantity detection element 10 so that the Z axis in FIG. 2 is aligned with the direction DR3 in FIG. 1, it becomes possible to detect an angular velocity ω with the axis along the direction DR3 as the detection axis.

[0021] As shown in Fig. 2, the physical quantity detection device 1 includes a physical quantity detection element 10 and a circuit device 20. The circuit device 20 is, for example, an integrated circuit device called an IC (Integrated Circuit). For example, the circuit device 20 is an IC manufactured by a semiconductor process, and is a semiconductor chip in which circuit elements are formed on a semiconductor substrate. The circuit device 20 includes a drive circuit 100, a detection circuit 110, and a processing circuit 150. Note that a modified configuration in which some of these circuits are not provided is also possible.

[0022] Physical quantity detection element 10 has drive arms 18P, 18Q, 18R, and 18S, detection arms 19P and 19Q, a base 21, and connecting arms 22P and 22Q. Detection arms 19P and 19Q extend from rectangular base 21 in the +Y-axis direction and the -Y-axis direction. Connecting arms 22P and 22Q extend from base 21 in the +X-axis direction and the -X-axis direction. Drive arms 18P and 18Q extend from the tip of connecting arm 22P in the +Y-axis direction and the -Y-axis direction, and drive arms 18R and 18S extend from the tip of connecting arm 22Q in the +Y-axis direction and the -Y-axis direction.

[0023] The physical quantity detection element 10 also has weights 27P, 27Q, 27R, 27S, 28P, and 28Q. These weights are also called hammerheads. Weights 27P and 27Q are provided at the tips of drive arms 18P and 18Q, respectively, and weights 27R and 27S are provided at the tips of drive arms 18R and 18S, respectively. Weights 28P and 28Q are provided at the tips of detection arms 19P and 19Q, respectively. Weights 27P, 27Q, 27R, and 27S provided on drive arms 18P, 18Q, 18R, and 18S are balance adjustment units used to adjust the balance of vibration of the physical quantity detection element 10. For example, during the manufacture of the physical quantity detection device 1, the balance of vibration of the physical quantity detection element 10 is adjusted by performing a trimming process in which the metal of weights 27P, 27Q, 27R, and 27S is removed using a laser.

[0024] The vibrating element of the physical quantity detection element 10 can be formed from a piezoelectric material such as quartz, lithium tantalate, or lithium niobate. Among these, it is preferable to use quartz as the constituent material of the vibrating element. The X-axis, Y-axis, and Z-axis are also called the electrical axis, mechanical axis, and optical axis of the quartz substrate, respectively. The quartz substrate is formed from a plate-shaped Z-cut quartz plate having a thickness in the Z-axis direction.

[0025] Drive electrodes 13 are formed on the upper and lower surfaces of the drive arms 18P and 18Q, and drive electrodes 14 are formed on the right and left sides of the drive arms 18P and 18Q. Drive electrodes 14 are formed on the upper and lower surfaces of the drive arms 18R and 18S, and drive electrodes 13 are formed on the right and left sides of the drive arms 18R and 18S. A drive signal DS from a drive circuit 100 is supplied to the drive electrode 13, and a feedback signal DG from the drive electrode 14 is input to the drive circuit 100.

[0026] Detection electrodes 15A are formed on the upper and lower surfaces of detection arm 19P, and detection electrodes 15B are formed on the right and left sides of detection arm 19P. Detection electrodes 16A are formed on the upper and lower surfaces of detection arm 19Q, and detection electrodes 16B are formed on the right and left sides of detection arm 19Q. Detection electrodes 15A, 15B, 16A, and 16B are the first detection electrode, second detection electrode, third detection electrode, and fourth detection electrode, respectively.

[0027] Detection signals S1A, S1B, S2A, and S2B from detection electrodes 15A, 15B, 16A, and 16B are input to detection circuit 110. Specifically, detection circuit 110 includes a first amplifier circuit 121 and a second amplifier circuit 122. The first amplifier circuit 121 and the second amplifier circuit 122 are, for example, charge / voltage conversion circuits (Q / V conversion circuits) and are also called charge amplifiers. Detection signal S1A from detection electrode 15A formed on the upper and lower surfaces of detection arm 19P and detection signal S2B from detection electrode 16B formed on the right and left sides of detection arm 19Q are input to first amplifier circuit 121. Detection signal S2A from detection electrode 16A formed on the upper and lower surfaces of detection arm 19Q and detection signal S1B from detection electrode 15B formed on the right and left sides of detection arm 19P are input to second amplifier circuit 122. The output signal of the first amplifier circuit 121 and the output signal of the second amplifier circuit 122 are differentially amplified by the differential amplifier circuit. For example, S1A and S2B are detection signals in phase, as described below. S2A and S1B are also detection signals in phase, but are detection signals that are, for example, 180 degrees out of phase with S1A and S2B, and are opposite in polarity. This configuration makes it possible to realize double wiring that essentially doubles the area of ​​the detection electrodes.

[0028] Grooves (not shown) are provided on the top and bottom surfaces of the drive arms 18P, 18Q, 18R, and 18S and the detection arms 19P and 19Q to improve the electric field effect between the electrodes. The provision of the grooves makes it possible to generate a relatively large amount of charge with a relatively small amount of distortion.

[0029] Drive terminals 23 and 24 and detection terminals 25A, 25B, 26A, and 26B are provided on base 21. A drive signal DS from drive circuit 100 is input to drive terminal 23, and a feedback signal DG to drive circuit 100 is output from drive terminal 24. Detection signals S1A and S2B to first amplifier circuit 121 are output from detection terminals 25A and 26B, and detection signals S2A and S1B to second amplifier circuit 122 are output from detection terminals 26A and 25B.

[0030] The drive circuit 100 included in the circuit device 20 is a circuit that drives the physical quantity detection element 10. The drive circuit 100 outputs a drive signal DS to the physical quantity detection element 10, thereby driving the vibrating arms of the physical quantity detection element 10 to vibrate. The drive signal DS is, for example, a rectangular wave signal, but may also be a sine wave signal.

[0031] The detection circuit 110 detects a physical quantity based on the detection signals S1A, S1B, S2A, and S2B from the physical quantity detection element 10. In FIG. 2, angular velocity is detected as the physical quantity. The detection signals S1A, S1B, S2A, and S2B are detection signals of physical quantities with, for example, the drive frequency of the drive signal DS as the carrier frequency. The detection circuit 110 detects the physical quantity (angular velocity) in the detection signals S1A, S1B, S2A, and S2B by, for example, synchronously detecting the signals based on the detection signals S1A, S1B, S2A, and S2B using a synchronization signal, and outputs the detection data.

[0032] The processing circuit 150 is a circuit that performs processing such as digital signal processing on the detection data from the detection circuit 110. The processing circuit 150 performs digital signal processing, including digital filter processing, on the detection data from the detection circuit 110. The detection data after digital filter processing by the processing circuit 150 is then output as, for example, a final detection value of a physical quantity. Note that the signal processing performed by the processing circuit 150 is not limited to digital filter processing, and various other signal processing such as temperature compensation processing and various correction processing can be performed.

[0033] Next, detailed operation of the physical quantity detection element 10 when it is a gyro sensor element will be described. When a drive signal DS is applied to the drive electrode 13 by the drive circuit 100, the drive arms 18P, 18Q, 18R, and 18S undergo flexural vibration as indicated by arrow C1 in FIG. 2 due to the inverse piezoelectric effect. For example, the vibration modes indicated by the solid arrows and the dotted arrows are repeated at a predetermined frequency. That is, the tips of the drive arms 18P and 18R repeatedly approach and separate from each other, and the tips of the drive arms 18Q and 18S also undergo flexural vibration in which they repeatedly approach and separate from each other. At this time, the drive arms 18P and 18Q and the drive arms 18R and 18S vibrate symmetrically with respect to the X-axis passing through the center of gravity of the base 21, so the base 21, the connecting arms 22P and 22Q, and the detection arms 19P and 19Q hardly vibrate.

[0034] In this state, when an angular velocity about the Z-axis is applied to physical quantity detection element 10, Coriolis force causes drive arms 18P, 18Q, 18R, and 18S to vibrate as indicated by arrow C2. That is, a Coriolis force in the direction of arrow C2, which is perpendicular to the direction of arrow C1 and the Z-axis, acts on drive arms 18P, 18Q, 18R, and 18S, generating a vibration component in the direction of arrow C2. This vibration of arrow C2 is transmitted to base 21 via connecting arms 22P and 22Q, causing detection arms 19P and 19Q to flexurally vibrate in the direction of arrow C3. Charge signals generated by the piezoelectric effect due to the flexural vibration of detection arms 19P and 19Q are input to detection circuit 110 as detection signals S1A, S1B, S2A, and S2B, thereby detecting angular velocity about the Z-axis.

[0035] For example, if the angular velocity of the physical quantity detection element 10 around the Z axis is ω, the mass is m, and the vibration velocity is v, the Coriolis force is expressed as Fc=2m·v·ω. Therefore, the detection circuit 110 can obtain the angular velocity ω around the Z axis by detecting a desired signal that is a signal corresponding to the Coriolis force.

[0036] FIG. 3 shows a detailed configuration example of the circuit device 20. Note that the circuit device 20 is not limited to the configuration of FIG. 3, and various modifications are possible, such as omitting some of the components or adding other components. Furthermore, the connection in this embodiment is an electrical connection. An electrical connection is a connection that allows electrical signals to be transmitted, and is a connection that allows information to be transmitted by electrical signals. The electrical connection may be a connection via a passive element or the like.

[0037] Physical quantity detection element 10, which is a sensor element, has drive vibrating bar 11, detection vibrating bar 12P, 12Q, drive electrodes 13, 14, and detection electrodes 15A, 15B, 16A, 16B. Drive vibrating bar 11 corresponds to drive arms 18P, 18Q, 18R, 18S in FIG. 2. Detecting vibrating bar 12P corresponds to detection arm 19P in FIG. 2, and detecting vibrating bar 12Q corresponds to detection arm 19Q. Vibrating bars 11, 12P, 12Q are piezoelectric vibrating bars formed from thin plates of a piezoelectric material such as quartz.

[0038] A drive signal DS from the drive circuit 100 is supplied to the drive electrode 13, causing the drive vibrating bar 11 to vibrate. A feedback signal DG generated by the vibration of the vibrating bar 11 is input from the drive electrode 14 to the drive circuit 100. The vibration of the drive vibrating bar 11 also causes the detection vibrating bars 12P and 12Q to vibrate. Charges generated in the detection electrodes 15A and 16B due to the vibration of the vibrating bars 12P and 12Q are input to a first amplifier circuit 121 of the detection circuit 110 as a first detection signal S1A and a fourth detection signal S2B (the sum signal of S1A and S2B). Charges generated in the detection electrodes 16A and 15B due to the vibration of the vibrating bars 12P and 12Q are input to a second amplifier circuit 122 of the detection circuit 110 as a third detection signal S2A and a second detection signal S1B (the sum signal of S2A and S1B). The circuit device 20 detects physical quantities such as angular velocity based on these detection signals.

[0039] The driver circuit 100 includes an amplifier circuit 102, a gain control circuit 104, a driver signal output circuit 106, and a synchronization signal output circuit .

[0040] The amplifier circuit 102 amplifies the feedback signal DG from the physical quantity detection element 10. For example, the amplifier circuit 102, which is an I / V conversion circuit, converts the current feedback signal DG from the physical quantity detection element 10 into a voltage signal DV and outputs it.

[0041] The gain control circuit 104 outputs a control voltage VC to the drive signal output circuit 106 to control the amplitude of the drive signal DS. The gain control circuit 104, which is, for example, an AGC circuit, automatically adjusts the gain so that the amplitude of the feedback signal DG from the physical quantity detection element 10 remains constant, in order to maintain constant sensor sensitivity. The gain control circuit 104 includes a full-wave rectifier circuit that performs full-wave rectification of the AC signal DV output by the amplifier circuit 102, and an integration circuit that integrates the signal from the full-wave rectifier circuit. The gain control circuit 104 then outputs the control voltage VC obtained by the integration process to the drive signal output circuit 106.

[0042] The drive signal output circuit 106 outputs a drive signal DS based on the signal DV amplified by the amplifier circuit 102. The drive signal output circuit 106 outputs, for example, a rectangular wave drive signal DS such that the control voltage VC from the gain control circuit 104 becomes a high-level voltage that is a voltage on the high potential side. Note that variations are also possible, such as the drive signal output circuit 106 outputting a sine wave drive signal DS.

[0043] The synchronization signal output circuit 108 outputs a synchronization signal SYC. The synchronization signal SYC is a signal generated based on the drive signal DS. Specifically, the synchronization signal SYC is a signal corresponding to the drive signal DS, and is, for example, a clock signal with the same frequency as the drive signal DS.

[0044] The detection circuit 110 includes an amplifier circuit 120, a synchronous detection circuit 130, a filter circuit 132, and an A / D conversion circuit 134. The amplifier circuit 120 includes a first amplifier circuit 121, a second amplifier circuit 122, a differential amplifier circuit 124, and an AC amplifier circuit 126. The amplifier circuit 120 receives a first detection signal S1A and a fourth detection signal S2B at a first input node N1, and receives a third detection signal S2A and a second detection signal S1B at a second input node N2.

[0045] The first amplifier circuit 121 converts into a voltage signal the sum signal of S1A and S2B, which are charge signals from the physical quantity detection element 10. The second amplifier circuit 122 converts into a voltage signal the sum signal of S2A and S1B, which are charge signals from the physical quantity detection element 10. The first amplifier circuit 121 and the second amplifier circuit 122 are continuous charge-voltage conversion circuits having feedback resistors.

[0046] The differential amplifier circuit 124 performs differential amplification of the signals QA1 and QA2 from the first amplifier circuit 121 and the second amplifier circuit 122. Because the physical quantity signals included in the signals QA1 and QA2 are differential signals, the signals are amplified by performing differential amplification. The AC amplifier circuit 126 amplifies the output signal QDF from the differential amplifier circuit 124 and outputs it as the output signal AQA from the amplifier circuit 120. The AC amplifier circuit 126 performs, for example, signal gain adjustment. Note that in this embodiment, the input of the first amplifier circuit 121 is connected to the first input node N1 and the input of the second amplifier circuit 122 is connected to the second input node N2. However, the inputs of the differential amplifier circuit 124 may also be connected to the first input node N1 and the second input node N2. That is, the charge signal from the physical quantity detection element 10 may be input to the differential amplifier circuit 124 without passing through the first amplifier circuit 121 and the second amplifier circuit 122.

[0047] The synchronous detection circuit 130 performs synchronous detection on the output signal AQA of the amplifier circuit 120 based on the synchronization signal SYC. This makes it possible to extract the physical quantity signal, which is the desired signal included in the output signal AQA, and detect the physical quantity.

[0048] The filter circuit 132 performs filtering such as low-pass filtering on the output signal of the synchronous detection circuit 130. The filter circuit 132 functions as a pre-filter for the A / D conversion circuit 134 in the subsequent stage. The filter circuit 132 also functions as a circuit for attenuating unwanted signals that cannot be completely removed by synchronous detection. The A / D conversion circuit 134 performs A / D conversion of the analog output signal from the filter circuit 132 and outputs digital detection data DQA.

[0049] The processing circuit 150 performs various digital signal processing on the physical quantity detection data DQA from the detection circuit 110. The processing circuit 150 performs temperature correction calculations based on the detection data DQA and temperature detection data. The processing circuit 150 also performs temperature compensation processing on the detection data DQA based on the temperature correction value obtained by the temperature correction calculations. The processing circuit 150 then performs digital filtering such as low-pass filtering and notch filtering on the detection data after the temperature compensation processing.

[0050] As described above, in this embodiment, charge signals from detection electrodes 15B and 16B in addition to detection electrodes 15A and 16A are input to detection circuit 110 and amplified by first amplifier circuit 121 and second amplifier circuit 122. In this way, when detecting the same physical quantity such as angular velocity, the amount of charge input to detection circuit 110 increases, thereby improving the detection sensitivity of the physical quantity. This improves the S / N ratio in detecting the physical quantity, making it possible to achieve low noise.

[0051] 2. Amplification circuit Next, the amplifier circuit 120 of the detection circuit 110 of this embodiment will be described in detail. As shown in Fig. 4, the amplifier circuit 120 includes a first amplifier circuit 121, a second amplifier circuit 122, and a differential amplifier circuit 124. The physical quantity detection element 10 also includes a first detection arm AS1 and a second detection arm AS2. The first detection arm AS1 and the second detection arm AS2 correspond to the detection arms 19P and 19Q in Fig. 2, respectively.

[0052] The first detection arm AS1 includes a first detection electrode ES1A and a second detection electrode ES1B. The second detection arm AS2 includes a third detection electrode ES2A and a fourth detection electrode ES2B. The first detection electrode ES1A and the second detection electrode ES1B correspond to detection electrodes 15A and 15B, respectively, in FIG. 2. The third detection electrode ES2A and the fourth detection electrode ES2B correspond to detection electrodes 16A and 16B, respectively, in FIG. 2. Although not particularly limited, the first detection electrode ES1A and the third detection electrode ES2A are electrodes formed on, for example, the upper and lower surfaces of the first detection arm AS1 and the second detection arm AS2. The second detection electrode ES1B and the fourth detection electrode ES2B are electrodes formed on, for example, the right and left sides of the first detection arm AS1 and the second detection arm AS2. However, the surfaces on which the detection electrodes are formed may be reversed.

[0053] The first amplifier circuit 121 receives the first detection signal S1A from the first detection electrode ES1A of the first detection arm AS1 and the fourth detection signal S2B from the fourth detection electrode ES2B of the second detection arm AS2. The second amplifier circuit 122 receives the third detection signal S2A from the third detection electrode ES2A of the second detection arm AS2 and the second detection signal S1B from the second detection electrode ES1B of the first detection arm AS1.

[0054] In this embodiment, in the descriptions of S1A, S1B, S2A, and S2B, "1" and "2" indicate that they correspond to the "first" and "second" of the first detection arm AS1 and the second detection arm AS2, respectively, and "A" and "B" indicate that they correspond to the top and bottom surfaces, right and left sides of each detection arm, respectively.

[0055] Each of the first amplifier circuit 121 and the second amplifier circuit 122 includes an operational amplifier and a feedback resistor and capacitor. For example, the non-inverting input terminal of the operational amplifier is set to analog GND, and a detection signal from the physical quantity detection element 10 is input to the inverting input terminal. The output of the operational amplifier is fed back to the node of the inverting input terminal, which is the input of the operational amplifier, via a resistor and a capacitor. With this configuration, each amplifier circuit operates as a Q / V conversion circuit that converts the detection signal, which is a charge signal, into a voltage signal. The signals QA1 and QA2 from the first amplifier circuit 121 and the second amplifier circuit 122 are input to a differential amplifier circuit 124 and differentially amplified, and the differentially amplified output signal QDF is output from the differential amplifier circuit 124.

[0056] 5 is a signal waveform diagram illustrating the operation of the amplifier circuit 120 of FIG. 4. As shown in FIG. 5, S1A and S2B are in-phase signals. Therefore, the sum signal (addition signal) of S1A and S2B, S1A+S2B, has an amplitude that is approximately twice that of each of S1A and S2B. This sum signal, S1A+S2B, is input to the first amplifier circuit 121.

[0057] 5, S2A and S1B are in-phase signals. Therefore, the sum signal (addition signal) of S2A and S1B, S2A+S1B, has an amplitude that is approximately twice that of each of S2A and S1B. This sum signal, S2A+S1B, is input to the second amplifier circuit 122.

[0058] S1A and S2B and S2A and S1B are signals with a phase difference of 180 degrees and opposite electrical polarities. For example, if S1A and S2B are a first polarity, which is one of positive and negative polarities, S2A and S1B are a second polarity, which is the other of positive and negative polarities.

[0059] For example, in the first detection arm AS1, when a positive charge is generated in the first detection electrode ES1A, a negative charge is generated in the second detection electrode ES1B, and when a negative charge is generated in the first detection electrode ES1A, a positive charge is generated in the second detection electrode ES1B. Therefore, the first detection signal S1A from the first detection electrode ES1A and the second detection signal S1B from the second detection electrode ES1B are signals of opposite phases.

[0060] Similarly, in the second detection arm AS2, when one of positive and negative charges is generated in the third detection electrode ES2A, the other of positive and negative charges is generated in the fourth detection electrode ES2B. Therefore, the third detection signal S2A from the third detection electrode ES2A and the fourth detection signal S2B from the fourth detection electrode ES2B are signals of opposite phases.

[0061] As shown by the solid and dotted arrows in C3 of FIG. 2, when the first detection arm AS1 (19P) bends in the positive direction of the X axis, the second detection arm AS2 (19Q) bends in the negative direction of the X axis due to the Coriolis force, and when the first detection arm AS1 bends in the negative direction of the X axis, the second detection arm AS2 bends in the positive direction of the X axis. Therefore, when one of positive and negative charges is generated in the first detection electrode ES1A of the first detection arm AS1, the other of positive and negative charges is generated in the third detection electrode ES2A of the second detection arm AS2. Therefore, the first detection signal S1A from the first detection electrode ES1A and the third detection signal S2A from the third detection electrode ES2A are opposite in phase. Similarly, the second detection signal S1B from the second detection electrode ES1B and the fourth detection signal S2B from the fourth detection electrode ES2B are opposite in phase.

[0062] Therefore, as shown in FIG. 5, S1A and S2B become signals of the same phase, S2A and S1B become signals of the same phase, and S1A and S2B and S2A and S1B become signals of opposite phase.

[0063] 4, the charge signal S2B from the fourth detection electrode ES2B is added to the charge signal S1A from the first detection electrode ES1A, and the resulting charge signal is input to the first amplification circuit 121 as a charge signal with double the amplitude. Also, the charge signal S1B from the second detection electrode ES1B is added to the charge signal S2A from the third detection electrode ES2A, and the resulting charge signal is input to the second amplification circuit 122 as a charge signal with double the amplitude. Therefore, it is possible to substantially double the area of ​​the detection electrodes, and the detection sensitivity of the physical quantity detection device 1 can be improved. In this embodiment, for convenience, this technique of substantially doubling the area of ​​the detection electrodes will be referred to as double wiring.

[0064] For example, Fig. 6 is an explanatory diagram of a comparative example of an amplifier circuit 120. The comparative example in Fig. 6 differs from Fig. 4 in that the second detection electrode ES1B of the first detection arm AS1 and the fourth detection electrode ES2B of the second detection arm AS2 are connected to ground.

[0065] In the configuration of the comparative example shown in Fig. 6, the charge generated at the second detection electrode ES1B of the first detection arm AS1 and the charge generated at the fourth detection electrode ES2B of the second detection arm AS2 are discharged to GND without being input to the first amplifier circuit 121 and the second amplifier circuit 122. Therefore, the amplitude of the detection signal cannot be doubled as in Fig. 5, which has the disadvantage of lower detection sensitivity compared to the configuration shown in Fig. 4. On the other hand, as will be described later, the configuration shown in Fig. 4 has the problem that it cannot achieve balance tuning, which is a balance adjustment of the vibration of the physical quantity detection element 10.

[0066] 3. Balanced tuning and double wiring In the physical quantity detection device 1, due to process variations during manufacturing and the like, the vibration balance of each drive arm is poor in the initial state, and unnecessary vibrations occur in the detection arms when the physical quantity detection element 10 is driven. Therefore, in balance tuning, the detection signals generated by the unnecessary vibrations are measured while the metal weight film of each drive arm is trimmed with an energy beam such as a laser to adjust the frequency and reduce the unnecessary vibrations. In balance tuning, the unnecessary signals generated from the two detection arms are measured individually for each detection arm, and the drive arm to be processed and the amount of processing in that drive arm are calculated based on the measured values.

[0067] However, in the configuration of Figure 4, the unwanted signals generated from the two detection arms are added together before being input to the amplifier circuit, which poses a problem that it is not possible to determine which detection arm generated the measured unwanted signal, making it impossible to calculate the drive arm that needs to be processed and the amount of processing.

[0068] For example, when the drive arm is vibrated and no angular velocity is generated, the first detection arm AS1 and the second detection arm AS2 should ideally not vibrate, but before balance tuning, they vibrate due to process variations during manufacturing, etc. For this reason, in balance tuning, unwanted signals due to unwanted vibrations of the first detection arm AS1 and the second detection arm AS2 are measured, and the drive arm to be processed and the amount of processing by that drive arm are calculated based on the measured values.

[0069] 6, unwanted vibrations in the first detection arm AS1 can be measured based on the output of the first amplifier circuit 121, to which the unwanted signal from the first detection arm AS1 is input as the detection signal S1. Also, unwanted vibrations in the second detection arm AS2 can be measured based on the output of the second amplifier circuit 122, to which the unwanted signal from the second detection arm AS2 is input as the detection signal S2.

[0070] 4, however, not only the unwanted signal due to the unwanted vibration of the first detection arm AS1 but also the unwanted signal due to the unwanted vibration of the second detection arm AS2 is input to the first amplifier circuit 121. Furthermore, not only the unwanted signal due to the unwanted vibration of the second detection arm AS2 but also the unwanted signal due to the unwanted vibration of the first detection arm AS1 is input to the second amplifier circuit 122. Therefore, the unwanted signals due to the unwanted vibration of each of the first detection arm AS1 and the second detection arm AS2 cannot be measured individually, which poses a problem in that appropriate balance tuning cannot be achieved.

[0071] Therefore, in this embodiment, attention is focused on the support substrate 30, which is interposed between the physical quantity detection element 10 and the circuit device 20 and relays signals, and a method is adopted in which, by cutting and adding wires in the support substrate 30, a connection configuration as shown in FIG. 6 is established during inspection, and a connection configuration as shown in FIG. 4 is established during operation. That is, when inspecting the physical quantity detection device 1, unwanted signals from each detection arm can be measured individually, enabling balance tuning to be performed. Then, after balance tuning, by cutting and adding wires in the support substrate 30, detection can be performed using double wiring, which doubles the number of detection electrodes, during operation of the physical quantity detection device 1. The method of this embodiment will be described in detail below.

[0072] 7 shows a plan view of the physical quantity detection element 10. FIG. 7 is a plan view of the physical quantity detection element 10 as seen from the bottom side, and mainly shows the wiring around the base 21.

[0073] 7, the physical quantity detection element 10 includes a base portion 21, a first detection arm AS1 (16P), and a second detection arm AS2 (16Q). The first detection arm AS1 has a first detection electrode ES1A and a second detection electrode ES1B, and the second detection arm AS2 has a third detection electrode ES2A and a fourth detection electrode ES2B. The base portion 21 is formed with a terminal FS1A to which the first detection electrode ES1A is connected and a terminal FS1B to which the second detection electrode ES1B is connected. The base portion 21 is also formed with a terminal FS2A to which the third detection electrode ES2A is connected and a terminal FS2B to which the fourth detection electrode ES2B is connected. The terminals FS1A and FS1B correspond to terminals 25A and 25B in FIG. 2, and the terminals FS2A and FS2B correspond to terminals 26A and 26B in FIG. 2. The base portion 21 is also formed with terminals FDS and FDG to which the drive electrodes EDS and EDG are connected.

[0074] Next, a detailed example of the support substrate 30 will be described. Plan views of the support substrate 30 are shown in Figs. 8, 9, and 10. The support substrate 30 is also called a relay substrate, and is, for example, a plate-like substrate having a first surface SF1 and a second surface SF2. Figs. 8 and 9 are plan views of the support substrate 30 as seen from the surface SF1 side, and Fig. 10 is a plan view of the support substrate 30 as seen from the surface SF2 side. As will be described later, Fig. 8 is a plan view showing an example of wiring on the support substrate 30 when the physical quantity detection device 1 is being inspected, and Fig. 9 is a plan view showing an example of wiring on the support substrate 30 when the physical quantity detection device 1 is in operation.

[0075] In this embodiment, the surface SF1 is the upper surface of the support substrate 30, and the surface SF2 is the lower surface of the support substrate 30. In addition, in Figures 8, 9, and 10, the direction DR1, which is the first direction, is, for example, a direction along the long side of the support substrate 30, and the direction DR2, which is the second direction, is, for example, a direction along the short side of the support substrate 30. The direction DR3, which is the third direction, is a direction perpendicular to the directions DR1 and DR2. The term "perpendicular" is intended to include "approximately perpendicular."

[0076] As shown in FIGS. 8 to 10 , the support substrate 30 includes a frame portion 40, an element mounting portion 70, and a plurality of beam portions 71, 72, 73, and 74. The element mounting portion 70 is provided inside the frame portion 40, and the physical quantity detection element 10 is mounted on the element mounting portion 70. The beam portions 71, 72, 73, and 74 support the element mounting portion 70 inside the frame portion 40. Note that the support substrate 30 is not limited to the configurations shown in FIGS. 8 to 10 , and various modifications are possible, such as omitting some of the components or adding other components. For example, although the following description will be given assuming that the support substrate 30 has the shape of the frame portion 40, the support substrate 30 may have a configuration that does not have the shape of the frame portion 40.

[0077] The support substrate 30 is made of, for example, a quartz substrate. By using a quartz substrate for the support substrate 30, the temperature-dependent variation in the resonant frequency of the support substrate 30 can be reduced compared to using a support member made of, for example, a bonded body of polyimide film and copper foil. This makes it possible to suppress unwanted vibrations in the physical quantity detection element 10 due to vibrations at the resonant frequency of the support substrate 30. Furthermore, the support substrate 30 is made of, for example, the same material as the physical quantity detection element 10. For example, if the physical quantity detection element 10 is made of a quartz substrate, the support substrate 30 is also made of the same quartz substrate. By making the support substrate 30 of the same quartz substrate as the physical quantity detection element 10, the thermal expansion coefficients of the support substrate 30 and the physical quantity detection element 10 can be made equal. Therefore, thermal stress due to the difference in thermal expansion coefficients between the support substrate 30 and the physical quantity detection element 10 is substantially not generated between them, and this makes it possible to prevent, for example, the bonding member B2 connecting the support substrate 30 and the physical quantity detection element 10 from peeling off due to thermal stress. Furthermore, the physical quantity detection element 10 is less susceptible to stress, and the deterioration and fluctuation of the vibration characteristics of the physical quantity detection element 10 can be more effectively suppressed.

[0078] For example, the support substrate 30 is made of a quartz crystal substrate with the same cut angle as the physical quantity detection element 10. For example, if the physical quantity detection element 10 is made of a Z-cut quartz crystal substrate, the support substrate 30 is also made of a Z-cut quartz crystal substrate. Furthermore, the orientation of the crystal axis of the support substrate 30 matches the orientation of the crystal axis of the substrate of the physical quantity detection element 10. That is, the X-axis, Y-axis, and Z-axis of the support substrate 30 and the physical quantity detection element 10 are aligned. Since quartz has different thermal expansion coefficients in the X-axis, Y-axis, and Z-axis directions, by making the support substrate 30 and the substrate of the physical quantity detection element 10 have the same cut angle and aligning the orientation of their crystal axes, the aforementioned thermal stress is less likely to occur between the support substrate 30 and the physical quantity detection element 10. This makes it possible to further suppress peeling of the bonding member B2 and deterioration of vibration characteristics caused by thermal stress.

[0079] The support substrate 30 is not limited to the above, and may have the same cut angle as the substrate of the physical quantity detection element 10 but a different crystal axis direction, for example. The support substrate 30 may also be formed from a quartz substrate with a different cut angle than the substrate of the physical quantity detection element 10. The support substrate 30 does not have to be formed from a quartz substrate. In this case, it is preferable that the constituent material of the support substrate 30 is a material whose difference in thermal expansion coefficient with quartz is smaller than the difference in thermal expansion coefficient between quartz and the constituent material of the base 2.

[0080] Furthermore, the support substrate 30 of this embodiment includes a frame portion 40, as shown in Figures 8 to 10. The frame portion 40 is a frame-shaped member having an inner region formed so as to surround the element mounting portion 70. For example, the frame portion 40 is a frame-shaped member shaped so as to surround the element mounting portion 70 with a plurality of inner peripheries on its inner side. For example, while the element mounting portion 70 is surrounded by four inner peripheries SD1, SD2, SD3, and SD4 in Figures 8 to 10, modifications such as surrounding the element mounting portion 70 with three inner peripheries or five or more inner peripheries are also possible.

[0081] Specifically, frame portion 40 of support substrate 30 includes support portions 41 and 42 and connecting portions 51 and 52. Support portion 41 is a first support portion, and support portion 42 is a second support portion. Furthermore, connecting portion 51 is a first connecting portion, and connecting portion 52 is a second connecting portion.

[0082] For example, support portion 41, which is a first support portion, is attached to base 2. Support portion 42, which is a second support portion, faces support portion 41 and is attached to base 2. For example, as shown in FIGS. 8 to 10, support portion 41 and support portion 42 face each other in direction DR1. As shown in FIG. 1, support portions 41 and 42 are joined and attached to base 2 by joining member B1. Specifically, support portions 41 and 42 are joined and attached to a step portion of recess 9A of base 2 by joining member B1 made of a conductive adhesive. For example, joining by joining member B1 is achieved by applying a conductive adhesive made of a thermosetting adhesive such as silver paste to internal terminals 6A and 6B in FIG. 1 and joining support portions 41 and 42 of support substrate 30.

[0083] Furthermore, connecting portions 51 and 52 connect supporting portion 41, which is the first supporting portion, to supporting portion 42, which is the second supporting portion. For example, connecting portion 51, which is the first connecting portion, connects supporting portion 41 and supporting portion 42 at the upper side of FIG. 8, and connecting portion 52, which is the second connecting portion, connects supporting portion 41 and supporting portion 42 at the lower side of FIG. 8. The region surrounded by supporting portions 41 and 42 and connecting portions 51 and 52 is the inner region of frame portion 40, and element mounting portion 70 is provided in this inner region. Note that although the number of connecting portions is two in FIGS. 8 to 10, the number of connecting portions may be one or three or more.

[0084] The beam portions 71, 72, 73, and 74 support the element mounting portion 70 in the inner region of the frame portion 40. The beam portions 71, 72, 73, and 74 can also be called spring portions. For example, the beam portions 71 and 72 extend in the direction DR1 from the support portion 41 of the frame portion 40. The beam portions 73 and 74 extend in the opposite direction to the direction DR1 from the support portion 42 of the frame portion 40. Note that although FIGS. 8 to 10 show a case where four beam portions 71, 72, 73, and 74 are provided as the multiple beam portions, this embodiment is not limited to this, and the number of beam portions may be two, three, or five or more. For example, modifications are also possible, such as providing only beam portions 71 and 73 or only beam portions 72 and 74 as the multiple beam portions.

[0085] As shown in FIGS. 8 to 10 , each of the beams 71, 72, 73, and 74 has an S-shaped meandering portion along its length, facilitating elastic deformation in the directions DR1, DR2, and DR3. The deformation of the beams 71 to 74 in the directions DR1, DR2, and DR3 effectively absorbs and alleviates stress transmitted from the base 2. For example, the S-shaped meandering allows the beams 71 to 74 to be elongated, thereby absorbing stress and strain through their flexible deformation. Mechanical shocks, such as those caused by drops or vibrations, on the physical quantity detection device 1 can also be absorbed in the same manner, thereby reducing stress, strain, and mechanical shocks that occur in the physical quantity detection element 10. However, the shape of each of the beams 71 to 74 is not particularly limited. For example, the meandering portion may be omitted and the beams may be straight. Furthermore, at least one of the beams 71 to 74 may have a different shape from the others.

[0086] The physical quantity detection element 10 is attached and mounted on the element mounting portion 70 supported by the beam portions 71 to 74. For example, the base portion 21 of the physical quantity detection element 10 shown in Fig. 2 is fixed via the conductive joining member B2 shown in Figs. 8 and 9, thereby attaching the physical quantity detection element 10 to the element mounting portion 70. For example, each terminal such as a driving terminal and a detection terminal provided on the base portion 21 of the physical quantity detection element 10 is joined to each of the joining members B2 shown in Fig. 3.

[0087] That is, the terminal FDS for DS connected to the driving electrode EDS at the base 21 of the physical quantity detection element 10 in Fig. 7 is joined to the joining member B2 for DS formed on the element mounting portion 70 in Fig. 8 and Fig. 9. Also, the terminal FDG for DG connected to the driving electrode EDG at the base 21 is joined to the joining member B2 for DG formed on the element mounting portion 70.

[0088] Furthermore, in the base 21, terminals FS1A and FS1B for S1A and S1B connected to the first detection electrode ES1A and the second detection electrode ES1B are joined to bonding members B2 for S1A and S1B formed on the element mounting portion 70. Furthermore, in the base 21, terminals FS2A and FS2B for S2A and S2B connected to the third detection electrode ES2A and the fourth detection electrode ES2B are joined to bonding members B2 for S2A and S2B formed on the element mounting portion 70.

[0089] 8 to 10, the support substrate 30 is provided with wirings LDS, LDG, LS1A, LS1B, LS2A, LS2B, and LGND for DS, DG, S1A, S1B, S2A, S2B, and GND. Also, as shown in Fig. 10, terminals TDS, TDG, TS1A, TS2A, and TGND for DS, DG, S1A, S2A, and GND are provided on a surface SF2, which is, for example, the lower surface, of the support substrate 30. Furthermore, metal films 43 set to a GND potential are formed on the upper and lower surfaces of the support substrate 30, and the GND wiring LGND is formed by this metal film 43. GND is the potential of the low-potential power supply and can also be called VSS.

[0090] For example, as shown in FIGS. 8 and 9, one end of the DS wiring LDS is connected to the DS bonding member B2, is routed through the support substrate 30, and is connected to the DS terminal TDS at the other end as shown in FIG. 10. As shown in FIGS. 8 and 9, one end of the DG wiring LDG is connected to the DG bonding member B2, is routed through the support substrate 30, and is connected to the DG terminal TDG at the other end as shown in FIG. 10. As shown in FIGS. 8 and 9, one end of the first wiring LS1A for S1A and the third wiring LS2A for S2A are connected to the S1A and S2A bonding members B2, are routed through the support substrate 30, and are connected to the S1A and S2A terminals TS1A and TS2A at the other end as shown in FIG. 10. As shown in FIGS. 8 and 9, one end of the GND wiring LGND is connected to the GND bonding member B2, is routed through the support substrate 30, and is connected to the GND terminal TGND at the other end as shown in FIG.

[0091] The terminals TDS, TDG, TS1A, TS2A, and TGND for DS, DG, S1A, S2A, and GND are connected to the internal terminals 6A and 6B provided in the stepped portion of the recess 9A in FIG. 1 via the bonding members B1 for DS, DG, S1A, S2A, and GND. As described above, the internal terminals 6A and 6B are connected to the internal terminals 7A and 7B via internal wiring (not shown), and the internal terminals 7A and 7B are connected to the circuit device 20 by bonding wires BW. This enables the drive signal DS, the feedback signal DG, and the detection signals S1A and S2A to be transmitted between the physical quantity detection element 10 and the circuit device 20 via the support substrate 30. In this way, the support substrate 30 also functions as a relay substrate for relaying signals. The GND terminal TGND of the support substrate 30 is connected to the GND terminal (pad) of the circuit device 20 and also to the external GND terminals provided as external terminals 8A and 8B in FIG. 1.

[0092] In this way, the support substrate 30 of this embodiment is used as a relay substrate that relays the signals DS, DG, S1A, and S2A between the physical quantity detection element 10 and the circuit device 20. In this embodiment, the support substrate 30, which is such a relay substrate, is used to achieve both improved detection sensitivity by the double wiring described with reference to FIG. 4 and balance tuning of the vibration of the physical quantity detection element 10.

[0093] For example, in this embodiment, during inspection of the physical quantity detection device 1, the second wiring LS1B and the fourth wiring LS2B are connected to ground. That is, during inspection, the second wiring LS1B connected to the second detection electrode ES1B of the first detection arm AS1 is connected to ground, and the fourth wiring LS2B connected to the fourth detection electrode ES2B of the second detection arm AS2 is also connected to ground. Specifically, as shown in the wiring example during detection in FIG. 8 , the second wiring LS1B is connected to the first ground wiring LG1 via the connection line CSG1, thereby connecting the second wiring LS1B to ground. Furthermore, the fourth wiring LS2B is connected to the second ground wiring LG2 via the connection line CSG2, thereby connecting the fourth wiring LS2B to ground.

[0094] In this way, during inspection, the second detection electrode ES1B of the first detection arm AS1 is connected to ground, and the fourth detection electrode ES2B of the second detection arm AS2 is also connected to ground, as shown in the configuration example of Fig. 6. Therefore, during balance tuning during inspection, it is possible to separately measure the unwanted signal due to the unwanted vibration of the first detection arm AS1 and the unwanted signal due to the unwanted vibration of the second detection arm AS2, as shown in Fig. 6. This makes it possible to calculate the drive arm to be processed and the amount of processing based on the measured value based on the output of the first amplifier circuit 121 and the measured value based on the output of the second amplifier circuit 122, thereby realizing balance tuning of the physical quantity detection element 10.

[0095] On the other hand, when the physical quantity detection device 1 is in operation, the second wiring LS1B is connected to the third wiring LS2A, and the fourth wiring LS2B is connected to the first wiring LS1A on the support substrate 30. That is, the second wiring LS1B connected to the second detection electrode ES1B of the first detection arm AS1 is connected to the third wiring LS2A connected to the third detection electrode ES2A of the second detection arm AS2. Furthermore, the fourth wiring LS2B connected to the fourth detection electrode ES2B of the second detection arm AS2 is connected to the first wiring LS1A connected to the first detection electrode ES1A of the first detection arm AS1.

[0096] In this way, the third detection electrode ES2A of the second detection arm AS2 and the second detection electrode ES1B of the first detection arm AS1 are connected via the third wiring LS2A and the second wiring LS1B. The first detection electrode ES1A of the first detection arm AS1 and the fourth detection electrode ES2B of the second detection arm AS2 are connected via the first wiring LS1A and the fourth wiring LS2B. Therefore, for example, during operation after shipping as a product, similar to FIG. 4, the first detection signal S1A from the first detection electrode ES1A and the fourth detection signal S2B from the fourth detection electrode ES2B can be input to the first amplifier circuit 121. The third detection signal S2A from the third detection electrode ES2A and the second detection signal S1B from the second detection electrode ES1B can be input to the second amplifier circuit 122. Therefore, during operation of the physical quantity detection device 1, double wiring with double the area of ​​the detection electrodes makes it possible to detect physical quantities such as angular velocity, thereby achieving improved sensitivity, etc. Note that "during inspection" refers to the time when the physical quantity detection device 1 is inspected before product shipment, for example, and "during operation" refers to the time when the physical quantity detection device 1 is mounted in an electronic device and operates after product shipment.

[0097] 4. Wiring connections on the support board Next, the wiring connections on the support substrate 30 will be described in detail with reference to Fig. 8 to Fig. 10. As mentioned above, Fig. 8 shows an example of wiring on the surface SF1 of the support substrate 30 during inspection, and Fig. 9 shows an example of wiring on the surface SF1 of the support substrate 30 during operation. Also, Fig. 10 shows an example of wiring on the surface SF2 of the support substrate 30 during inspection and operation.

[0098] 8, 9, and 10 are upside down, with the upper side of Fig. 8 and 9 corresponding to the lower side of Fig. 10, and the lower side of Fig. 8 and 9 corresponding to the upper side of Fig. 10. Therefore, in the following description, the lower side in Fig. 8 and 9 becomes the upper side in Fig. 10, and the upper side in Fig. 8 and 9 becomes the lower side in Fig. 10.

[0099] For example, one end of the first wiring LS1A is connected to the bonding member B2 for S1A in the lower right region of the element mounting portion 70 in Figures 8 and 9. The first wiring LS1A passes through the beam portion 74 and is routed on the surface SF2 of the support substrate 30, then turns back in the upper region of the inner periphery SD4 in Figure 10, and is routed again on the surface SF1 in the lower region of the support portion 42 in Figures 8 and 9. The first wiring LS1A is connected to a pad PS1A arranged in the lower region of the support portion 42 in Figures 8 and 9, then is routed further on the surface SF1, turns back in the lower region of the inner periphery SD4 in Figures 8 and 9, and is connected to a terminal TS1A in the upper region of the support portion 42 in Figure 10.

[0100] 8 and 9. The second wiring LS1B has one end connected to the bonding member B2 for S1B in the region below the element mounting portion 70 in Fig. 8 and 9. The second wiring LS1B passes through the beam portion 74 and is routed on the surface SF2 of the support substrate 30, then turns back in the region above the inner periphery SD4 in Fig. 10, and is routed again on the surface SF1 in the region below the support portion 42 in Fig. 8 and 9. The second wiring LS1B is connected to the pad PS1B arranged in the region below the support portion 42 in Fig. 8 and 9.

[0101] 8 and 9, one end of the third wiring LS2A is connected to the bonding member B2 for S2A. The third wiring LS2A passes through the beam portion 73 and is routed on the surface SF2 of the support substrate 30, then turns back in the region below the inner periphery SD4 in FIG. 10, and is routed again on the surface SF1 in the region above the support portion 42 in FIG. 8 and 9. The third wiring LS2A is connected to the pad PS2A arranged in the region above the support portion 42 in FIG. 8 and 9, then is routed further on the surface SF1, turns back in the region above the inner periphery SD4 in FIG. 8 and 9, and is connected to the terminal TS2A in the region below the support portion 42 in FIG. 10.

[0102] 8 and 9, one end of the fourth wiring LS2B is connected to the bonding member B2 for S2B. The fourth wiring LS2B passes through the beam portion 73 and is routed on the surface SF2 of the support substrate 30, then folded back in the lower region of the inner periphery SD4 in FIG. 10, and is routed again on the surface SF1 in the upper region of the support portion 42 in FIG. 8 and 9. The fourth wiring LS2B is connected to the pad PS2B arranged in the upper region of the support portion 42 in FIG. 8 and 9.

[0103] 8 and 9, the support substrate 30 has a first ground wiring LG1 wired in a lower region of the support portion 41, and a second ground wiring LG2 wired in an upper region of the support portion 41. The first ground wiring LG1 and the second ground wiring LG2 are formed of a metal film 43 that is set to the ground potential.

[0104] During inspection of the physical quantity detection device 1, the second wiring LS1B is connected to the first ground wiring LG1 via the connection line CSG1, and thus the second wiring LS1B is connected to the ground, as shown in Fig. 8. During inspection, the fourth wiring LS2B is connected to the second ground wiring LG2 via the connection line CSG2, and thus the fourth wiring LS2B is connected to the ground, as shown in Fig. 8.

[0105] By connecting the second wiring LS1B to ground in this way, the second detection electrode ES1B of the first detection arm AS1 connected to the second wiring LS1B is connected to ground. Also, by connecting the fourth wiring LS2B to ground, the fourth detection electrode ES2B of the second detection arm AS2 connected to the fourth wiring LS2B is connected to ground. This results in the connection configuration shown in Figure 6, which enables balance tuning during testing.

[0106] On the other hand, during operation of the physical quantity detection device 1, the connection between the second wiring LS1B and the first ground wiring LG1 is cut, and a cut trace CT1 remains between the second wiring LS1B and the first ground wiring LG1, as shown in Fig. 9. Also during operation, the connection between the fourth wiring LS2B and the second ground wiring LG2 is cut, and a cut trace CT2 remains between the fourth wiring LS2B and the second ground wiring LG2, as shown in Fig. 9.

[0107] For example, in this embodiment, after balance tuning, the connection line CSG1 between the second wiring LS1B and the first ground wiring LG1 and the connection line CSG2 between the fourth wiring LS2B and the second ground wiring LG2 are cut by irradiation with a laser or the like. As a result, cut marks CT1 and CT2 remain at the cut locations of the connection lines CSG1 and CSG2. In this way, the cut marks CT1 and CT2 indicate that the connection between the second wiring LS1B and ground and the connection between the fourth wiring LS2B and ground have been cut after balance tuning.

[0108] The disconnection between the second wiring LS1B and the fourth wiring LS2B and the ground wiring is not limited to laser irradiation, but may be performed by irradiation with an energy beam other than a laser, such as an ion beam. Alternatively, a fuse element may be provided between the second wiring LS1B and the fourth wiring LS2B and the ground wiring, and the connection may be disconnected by passing a current through the fuse element. Furthermore, the connection lines CSG1 and CSG2 connecting the second wiring LS1B and the fourth wiring LS2B and the ground wiring may be formed using a metal film forming the ground wiring, but may also be formed using a conductive material other than a metal film, such as a conductive adhesive. Examples of methods for connecting using a conductive material include inkjet printing, coating, and bonding. Inkjet printing is an electrostatic inkjet or piezoelectric inkjet method, which ejects conductive ink or conductive paste. Inkjet printing involves coating a conductive adhesive.

[0109] 9, during operation of the physical quantity detecting device 1, the pads PS1B and PS2A are connected by a bonding wire BW1, and the pads PS2B and PS1A are connected by a bonding wire BW2. The pad PS1A is connected to the first wiring LS1A, and the pad PS1B is connected to the second wiring LS1B. The pad PS2A is connected to the third wiring LS2A, and the pad PS2B is connected to the fourth wiring LS2B. Therefore, by connecting the pads PS1B and PS2A by the bonding wire BW1, the second wiring LS1B connected to the pad PS1B and the third wiring LS2A connected to the pad PS2A are connected. By connecting the pads PS2B and PS1A by the bonding wire BW2, the fourth wiring LS2B connected to the pad PS2B and the first wiring LS1A connected to the pad PS1A are connected. The bonding wires BW1 and BW2 may be made of gold or a gold alloy, for example.

[0110] By connecting the second wiring LS1B and the third wiring LS2A in this way, the second detection electrode ES1B of the first detection arm AS1 connected to the second wiring LS1B is connected to the third detection electrode ES2A of the second detection arm AS2 connected to the third wiring LS2A. Furthermore, by connecting the fourth wiring LS2B and the first wiring LS1A, the fourth detection electrode ES2B of the second detection arm AS2 connected to the fourth wiring LS2B is connected to the first detection electrode ES1A of the first detection arm AS1 connected to the first wiring LS1A. This results in the connection configuration shown in FIG. 4, which enables improved sensitivity during operation by doubling the wiring.

[0111] The connection between the second wiring LS1B and the third wiring LS2A and the connection between the fourth wiring LS2B and the first wiring LS1A during operation are not limited to bonding wires, and various connecting members can be used. For example, a conductive member such as a conductive adhesive may be used as the connecting member between the wirings. For example, a first conductive member such as a first conductive adhesive may be formed between the second wiring LS1B and the third wiring LS2A to connect the two wirings, or a second conductive member such as a second conductive adhesive may be formed between the fourth wiring LS2B and the first wiring LS1A to connect the two wirings.

[0112] Next, the wiring connections of this embodiment will be explained in a simplified manner using Figures 11 and 12. Figure 11 is a diagram that schematically shows the wiring connections during inspection, and Figure 12 is a diagram that schematically shows the wiring connections during operation.

[0113] 11 and 12, the first detection electrode ES1A is connected to one end of a first wiring LS1A of the support substrate 30 via a bonding member B2 for the terminals FS1A and S1A of the physical quantity detection element 10. The first wiring LS1A is connected to a pad PS1A, and the other end of the first wiring LS1A is electrically connected to an input terminal of the first amplifier circuit 121 via a bonding member B1 for the terminals TS1A and S1A of the support substrate 30.

[0114] The fourth detection electrode ES2B is connected to one end of a fourth wiring LS2B of the support substrate 30 via a bonding member B2 for the terminals FS2B and S2B of the physical quantity detection element 10. The other end of the fourth wiring LS2B is connected to a pad PS2B.

[0115] Furthermore, the third detection electrode ES2A is connected to one end of a third wiring LS2A of the support substrate 30 via a bonding member B2 for the terminals FS2A and S2A of the physical quantity detection element 10. The third wiring LS2A is connected to a pad PS2A, and the other end of the third wiring LS2A is electrically connected to an input terminal of the second amplifier circuit 122 via a bonding member B1 for the terminals TS2A and S2A of the support substrate 30.

[0116] The second detection electrode ES1B is connected to one end of a second wiring LS1B of the support substrate 30 via a bonding member B2 for the terminals FS1B and S1B of the physical quantity detection element 10. The other end of the second wiring LS1B is connected to a pad PS1B.

[0117] 11, during testing, the second wiring LS1B is connected to the first ground wiring LG1 via a connection line CSG1. As a result, the second detection electrode ES1B connected to the second wiring LS1B is set to ground. Also, during testing, the fourth wiring LS2B is connected to the second ground wiring LG2 via a connection line CSG2. As a result, the fourth detection electrode ES2B connected to the fourth wiring LS2B is set to ground.

[0118] 6, the second detection electrode ES1B of the first detection arm AS1 and the fourth detection electrode ES2B of the second detection arm AS2 are set to ground. Furthermore, the first detection signal S1A from the first detection electrode ES1A of the first detection arm AS1 is input to the first amplifier circuit 121, and the third detection signal S2A from the third detection electrode ES2A of the second detection arm AS2 is input to the second amplifier circuit 122. Therefore, the unwanted signals due to unwanted vibrations of the first detection arm AS1 and the second detection arm AS2 can be measured separately, enabling balance tuning.

[0119] 12, during operation, the second wiring LS1B is disconnected from the first ground wiring LG1, and the second wiring LS1B is connected to the third wiring LS2A via a bonding wire BW1. Also, the fourth wiring LS2B is disconnected from the second ground wiring LG2, and the fourth wiring LS2B is connected to the first wiring LS1A via a bonding wire BW2.

[0120] 4, the first detection signal S1A from the first detection electrode ES1A of the first detection arm AS1 and the fourth detection signal S2B from the fourth detection electrode ES2B of the second detection arm AS2 are input to the first amplifier circuit 121. The third detection signal S2A from the third detection electrode ES2A of the second detection arm AS2 and the second detection signal S1B from the second detection electrode ES1B of the first detection arm AS1 are input to the second amplifier circuit 122. Therefore, a signal obtained by adding the first detection signal S1A and the fourth detection signal S2B, which are in phase with each other, is input to the first amplifier circuit 121, and a signal obtained by adding the third detection signal S2A and the second detection signal S1B, which are in phase with each other, is input to the second amplifier circuit 122. This realizes the double wiring described in FIG. 4, and improves the sensitivity of the physical quantity detection device 1.

[0121] Note that various modifications can be made to the connection wiring of this embodiment. For example, although the above description has been given of the case where the LS1B and LS2B wirings are connected to ground during testing, the LS1A and LS1A wirings may also be connected to ground. Figures 13 and 14 are diagrams showing a second wiring example, which is an example of wiring on surfaces SF1 and SF2 of support substrate 30 in that case. Figures 15 and 16 are diagrams schematically showing wiring connections in the second wiring example.

[0122] 13, in the second wiring example, the wiring LS1A is connected to the first ground wiring LG1 by a connection line CSG1, and the wiring LS2A is connected to the second ground wiring LG2 by a connection line CSG2. Also, as shown in FIG. 14, one end of the wiring LS1B is connected to the terminal TS1B of the support substrate 30, and one end of the wiring LS2B is connected to the terminal TS2B of the support substrate 30.

[0123] 15, the LS1A wiring is connected to the first ground wiring LG1, thereby connecting the electrode of ES1A to the ground, and the LS2A wiring is connected to the second ground wiring LG2, thereby connecting the electrode of ES2A to the ground. A detection signal from the electrode of ES1B is input to the first amplifier circuit 121, and a detection signal from the electrode of ES2B is input to the second amplifier circuit 122.

[0124] 16, the wires for LS1A and LS2B are connected by a bonding wire BW1, and the wires for LS2A and LS1B are connected by a bonding wire BW2. As a result, the detection signal from the electrode for ES1B and the detection signal from the electrode for ES2A are added together and input to the first amplifier circuit 121, and the detection signal from the electrode for ES2B and the detection signal from the electrode for ES1A are added together and input to the second amplifier circuit 122.

[0125] In this second wiring example, for example, the electrodes ES1B, ES2A, ES2B, and ES1A in Figures 15 and 16 correspond to the first detection electrode, fourth detection electrode, third detection electrode, and second detection electrode, respectively, and the wiring LS1B, LS2A, LS2B, and LS1A correspond to the first wiring, fourth wiring, third wiring, and second wiring, respectively.

[0126] As described above, the physical quantity detection device 1 of this embodiment includes, as shown in Fig. 1 and Fig. 2, a physical quantity detection element 10, a support substrate 30, and a circuit device 20. The physical quantity detection element 10 has a plurality of detection arms (19P, 19Q), a plurality of drive arms (18P to 18S), and a base 21, and the support substrate 30 supports the physical quantity detection element 10 at the base 21. The circuit device 20 also has a detection circuit 110 that detects a physical quantity based on a plurality of detection signals from the plurality of detection arms.

[0127] 7, the physical quantity detection element 10 includes a first detection arm AS1 (19P) and a second detection arm AS2 (19Q) as multiple detection arms. The first detection arm AS1 has a first detection electrode ES1A and a second detection electrode ES1B, and is a detection arm extending from the base 21. The second detection arm AS2 has a third detection electrode ES2A and a fourth detection electrode ES2B, and is a detection arm extending from the base 21 in the opposite direction to the first detection arm AS1.

[0128] 2 to 4, the detection circuit 110 of the circuit device 20 includes a first amplifier circuit 121 and a second amplifier circuit 122. The first amplifier circuit 121 receives a first detection signal S1A from the first detection electrode ES1A and a fourth detection signal S2B from the fourth detection electrode ES2B during operation. The second amplifier circuit 122 receives a third detection signal S2A from the third detection electrode ES2A and a second detection signal S1B from the second detection electrode ES1B during operation.

[0129] 8 to 12, the support substrate 30 includes a first wiring LS1A, a second wiring LS1B, a third wiring LS2A, and a fourth wiring LS2B. One end of the first wiring LS1A is connected to a first detection electrode ES1A, and one end of the second wiring LS1B is connected to a second detection electrode ES1B. One end of the third wiring LS2A is connected to a third detection electrode ES2A, and one end of the fourth wiring LS2B is connected to a fourth detection electrode ES2B.

[0130] In this embodiment, the second wiring LS1B is connected to the ground on the support substrate 30 during inspection as shown in Fig. 11, and is connected to the third wiring LS2A during operation as shown in Fig. 12. Furthermore, the fourth wiring LS2B is connected to the ground on the support substrate 30 during inspection as shown in Fig. 11, and is connected to the first wiring LS1A during operation as shown in Fig. 12.

[0131] In this way, during testing, the second wiring LS1B and the fourth wiring LS2B are connected to ground, so that the second detection electrode ES1B connected to the second wiring LS1B and the fourth detection electrode ES2B connected to the fourth wiring LS2B are also connected to ground. As a result, the first detection signal S1A from the first detection electrode ES1A of the first detection arm AS1 is input to the first amplifier circuit 121, and the third detection signal S2A from the third detection electrode ES2A of the second detection arm AS2 is input to the second amplifier circuit 122. This makes it possible to individually measure the detection signals in the first detection arm AS1 and the second detection arm AS2, thereby achieving balance tuning and the like. Furthermore, during operation, the first detection signal S1A from the first detection electrode ES1A and the fourth detection signal S2B from the fourth detection electrode ES2B are input to the first amplifier circuit 121, and the third detection signal S2A from the third detection electrode ES2A and the second detection signal S1B from the second detection electrode ES1B are input to the second amplifier circuit 122. This makes it possible to achieve, for example, improved sensitivity by double wiring. Therefore, it becomes possible to achieve both adjustments such as balance tuning and improved sensitivity.

[0132] 8 to 12, the support substrate 30 includes a first ground wiring LG1 and a second ground wiring LG2. As shown in FIGS. 8 and 11, during testing, the first ground wiring LG1 and the second wiring LS1B are connected, and the second ground wiring LG2 and the fourth wiring LS2B are connected. In this manner, during testing, the first ground wiring LG1 and the second wiring LS1B are connected, so that the second wiring LS1B is connected to ground, and the second detection electrode ES1B connected to the second wiring LS1B is set to ground potential. During testing, the second ground wiring LG2 and the fourth wiring LS2B are connected, so that the fourth wiring LS2B is connected to ground, and the fourth detection electrode ES2B connected to the fourth wiring LS2B is set to ground potential. This enables balanced tuning and the like to be realized. The first ground wiring and the second ground wiring may be the same wiring.

[0133] 17 and 9, in this embodiment, the support substrate 30 has a cut trace CT1 between the second wiring LS1B and the first ground wiring LG1, and a cut trace CT2 between the fourth wiring LS2B and the second ground wiring LG2. The cut trace CT1 is a first cut trace, and the cut trace CT2 is a second cut trace. The fact that the support substrate 30 has such cut traces CT1 and CT2 indicates that the second wiring LS1B and the fourth wiring LS2B were connected to ground during inspection and were then cut.

[0134] 8 to 12, the support substrate 30 includes a terminal TS1A for connection to a first input node N1 of the amplifier circuit 120 and a terminal TS2A for connection to a second input node N2 of the amplifier circuit 120. The terminal TS1A is a first terminal, and the terminal TS2A is a second terminal. The terminal TS1A is connected to a first wiring LS1A, and the terminal TS2A is connected to a third wiring LS2A. That is, as shown in FIGS. 11 and 12, the terminal TS1A of the support substrate 30 connected to the first amplifier circuit 121 is connected to the first wiring LS1A, and the terminal TS2A of the support substrate 30 connected to the second amplifier circuit 122 is connected to the third wiring LS2A. For example, the terminal TS1A is connected to the input terminal of the first detection signal S1A of the first amplifier circuit 121 via a bonding member B1 for S1A, an internal package wiring, or the like. The terminal TS2A is connected to the input terminal of the second amplifier circuit 122 for the third detection signal S2A via the joining member B1 for S2A, wiring inside the package, or the like.

[0135] In this way, the first detection signal S1A from the first detection electrode ES1A of the first detection arm AS1 can be input to the first amplifier circuit 121 via the first wiring LS1A and the terminal TS1A. Also, the third detection signal S2A from the third detection electrode ES2A of the second detection arm AS2 can be input to the second amplifier circuit 122 via the third wiring LS2A and the terminal TS2A.

[0136] 8 to 12, the second wiring LS1B is not connected to the terminal TS2A, which is the second terminal, during inspection, and the fourth wiring LS2B is not connected to the terminal TS1A, which is the first terminal, during inspection. For example, during the operation shown in FIG. 12, the second wiring LS1B is connected to the terminal TS2A via a bonding wire BW1 or the like, but during the inspection shown in FIG. 11, the second wiring LS1B is not connected to the terminal TS2A. During the operation shown in FIG. 12, the fourth wiring LS2B is connected to the terminal TS1A via a bonding wire BW2 or the like, but during the inspection shown in FIG. 11, the fourth wiring LS2B is not connected to the terminal TS1A.

[0137] In this way, during testing, the second detection electrode ES1B connected to the second wiring LS1B is not electrically connected to the second amplifier circuit 122 via the terminal TS2A. Also, during testing, the fourth detection electrode ES2B connected to the fourth wiring LS2B is not electrically connected to the first amplifier circuit 121 via the terminal TS1A. This makes it possible to perform adjustments such as balance tuning by individually measuring the detection signal from the first detection arm AS1 and the detection signal from the second detection arm AS2 during testing.

[0138] 8 to 12, the support substrate 30 includes a pad PS1A connected to the first wiring LS1A, a pad PS1B connected to the second wiring LS1B, a pad PS2A connected to the third wiring LS2A, and a pad PS2B connected to the fourth wiring LS2B. The pads PS1A, PS1B, PS2A, and PS2B are the first pad, the second pad, the third pad, and the fourth pad, respectively. As shown in FIG. 12, during operation, the pads PS1B and PS2A are connected, and the pads PS2B and PS1A are connected.

[0139] In this way, by connecting pad PS1B and pad PS2A, the second wiring LS1B and third wiring LS2A can be connected, and by connecting pad PS2B and pad PS1A, the fourth wiring LS2B and first wiring LS1A can be connected. By providing such pads PS1A, PS1B, PS2A, and PS2B on support substrate 30, it becomes possible to easily connect the wirings after inspection.

[0140] 12, the pads PS1B and PS2A are connected by a bonding wire BW1, and the pads PS2B and PS1A are connected by a bonding wire BW2. The bonding wires BW1 and BW2 are the first bonding wire and the second bonding wire, respectively.

[0141] In this way, by connecting pad PS1B and pad PS2A with bonding wire BW1, the second wiring LS1B and third wiring LS2A can be connected, and by connecting pad PS2B and pad PS1A with bonding wire BW2, the fourth wiring LS2B and first wiring LS1A can be connected. Furthermore, by using bonding wires BW1 and BW2, even if other wiring exists between the second wiring LS1B and third wiring LS2A or between the fourth wiring LS2B and first wiring LS1A, it becomes possible to easily connect the wirings with bonding wires BW1 and BW2 on top of the other wiring.

[0142] 18 shows an example of the arrangement relationship between the support substrate 30, the physical quantity detection element 10, and the circuit device 20. As shown in Fig. 18, the physical quantity detection element 10 is arranged on the surface SF1 side of the support substrate 30. Furthermore, the circuit device 20 is arranged on the surface SF2 side of the support substrate 30. In other words, the support substrate 30 is arranged between the physical quantity detection element 10 and the circuit device 20.

[0143] As described with reference to FIG. 17, the support substrate 30 has a cut trace CT1 between the second wiring LS1B and the first ground wiring LG1, and a cut trace CT2 between the fourth wiring LS2B and the second ground wiring LG2.

[0144] 18, the cut marks CT1 and CT2 do not overlap the physical quantity detection element 10 in plan view. The plan view is, for example, a plan view in a direction perpendicular to the support substrate 30, that is, a plan view in a direction DR3. For example, the physical quantity detection element 10 has components such as the base 21, drive arms 18P to 18S, detection arms 19P and 19Q, and weights 27P to 27S, and as shown in FIG. 18, the cut marks CT1 and CT2 are formed at positions that do not overlap any of these components in plan view.

[0145] 18, the cut marks CT1 and CT2 are also configured not to overlap with the circuit device 20 in a plan view. For example, the circuit device 20, which is a semiconductor chip, has a plurality of circuits laid out and arranged, and the cut marks CT1 and CT2 are formed at positions that do not overlap with any of these circuits in a plan view.

[0146] This makes it possible to realize a physical quantity detection device 1 that can prevent malfunctions caused by cutting the connection between the second wiring LS1B and the first ground wiring LG1 or the connection between the fourth wiring LS2B and the second ground wiring LG2. For example, when cutting the connection between the second wiring LS1B and the first ground wiring LG1 or the connection between the fourth wiring LS2B and the second ground wiring LG2 with an energy ray such as a laser, if the energy ray is irradiated onto the physical quantity detection element 10 or the circuit device 20, the element characteristics of the physical quantity detection element 10 may be adversely affected, or the circuit characteristics of the circuit device 20 may be adversely affected. For example, malfunctions such as deterioration of the vibration characteristics of the physical quantity detection element 10 or the circuit characteristics of the circuit device 20 may occur. In this regard, FIG. 18 shows that cut marks CT1 and CT2 are formed at positions where the energy ray such as a laser is not irradiated onto the physical quantity detection element 10 or the circuit device 20, indicating that the energy ray is not irradiated onto the physical quantity detection element 10 or the circuit device 20. Therefore, it is possible to realize a physical quantity detecting device 1 that can prevent the occurrence of problems caused by disconnection of the wiring and the ground wiring due to energy rays.

[0147] As shown in FIG. 1 , the physical quantity detection device 1 includes a package 4 that houses the physical quantity detection element 10, the support substrate 30, and the circuit device 20. The package 4 is composed of, for example, a base 2 and a lid 3. In this case, the cut marks CT1 and CT2 overlap with the base 2 of the package 4, for example, in a plan view. For example, the dotted lines corresponding to the base 2 in FIG. 18 correspond to, for example, the stepped portion of the base 2 in FIG. 1. The base 2 is located below (on the opposite side of DR3) the formation positions of the cut marks CT1 and CT2, without any other members or elements such as terminals interposed therebetween. If the base 2 is made of, for example, ceramic, there is no problem even if an energy beam is irradiated to cut the wiring and the ground wiring. Therefore, by having the cut marks CT1 and CT2 overlap with the base 2 in a plan view, a physical quantity detection device 1 that can prevent malfunctions caused by irradiation with an energy beam such as a laser can be realized.

[0148] 8, 9, etc., pads PS1A, PS1B, PS2A, and PS2B, which are terminals for connecting wiring, are provided on the support substrate 30. The pads PS1A, PS1B, PS2A, and PS2B are the first pad, second pad, third pad, and fourth pad, respectively, and are connected to the wirings LS1A, LS1B, LS2A, and LS2B.

[0149] 18, the pads PS1A, PS1B, PS2A, and PS2B are configured so as not to overlap the physical amount detection element 10 in a plan view. For example, the pads PS1A, PS1B, PS2A, and PS2B are formed at positions so as not to overlap the members constituting the physical amount detection element 10 in a plan view.

[0150] 18, the pads PS1A, PS1B, PS2A, and PS2B are also arranged so as not to overlap the circuit device 20 in a plan view. For example, the pads PS1A, PS1B, PS2A, and PS2B are formed at positions so as not to overlap the circuit constituting the circuit device 20 in a plan view.

[0151] This makes it possible to realize a physical quantity detection device 1 that can prevent malfunctions caused by wiring connections using pads PS1A, PS1B, PS2A, and PS2B. For example, in FIGS. 9 and 12, pads PS1B and PS2A are connected by bonding wire BW1, and pads PS2B and PS1A are connected by bonding wire BW2. In this case, if pressure or impact caused by the connection of bonding wires BW1 and BW2 is applied to the physical quantity detection element 10 or the circuit device 20, this may adversely affect the element characteristics of the physical quantity detection element 10 and the circuit characteristics of the circuit device 20. For example, this may cause malfunctions such as deterioration in the vibration characteristics of the physical quantity detection element 10 or the circuit characteristics of the circuit device 20. In this regard, in FIG. 18, pads PS1A, PS1B, PS2A, and PS2B are formed in positions where pressure or impact caused by the connection of bonding wires BW1, BW2, etc. will not be applied to the physical quantity detection element 10 or the circuit device 20. Therefore, it is possible to realize a physical quantity detecting device 1 that can prevent problems from occurring due to wiring connections using the pads PS1A, PS1B, PS2A, and PS2B.

[0152] 18, the pads PS1A, PS1B, PS2A, and PS2B overlap with the base 2 of the package 4, for example, in a plan view. For example, the base 2 is located below the pads PS1A, PS1B, PS2A, and PS2B (on the opposite side of DR3) without any other members or elements such as terminals interposed therebetween. If the base 2 is made of, for example, ceramic, there will be no problem even if pressure or impact due to wiring connections using bonding wires BW1, BW2, etc. is applied. Therefore, by overlapping the pads PS1A, PS1B, PS2A, and PS2B with the base 2 in a plan view, it is possible to realize a physical quantity detection device 1 that can prevent malfunctions due to wiring connections using bonding wires BW1, BW2, etc.

[0153] 5. Manufacturing method Next, an example of a manufacturing method for the physical quantity detection device 1 of this embodiment will be described with reference to Fig. 19. As shown in Fig. 19, in step SP1, the physical quantity detection element 10 and the support substrate 30 are prepared. As shown in Figs. 8 and 11, on the support substrate 30, the second wiring LS1B and the first ground wiring LG1 are connected by a connection line CSG1, and the fourth wiring LS2B and the second ground wiring LG2 are connected by a connection line CSG2. Furthermore, there is no connection between the pads PS1B and PS2A, and between the pads PS2B and PS1A, and no connecting member such as a bonding wire is provided.

[0154] In step SP2, the physical quantity detection element 10 is attached to the support substrate 30. Specifically, in FIG. 1, the support substrate 30 is first mounted on the package 4. For example, the support substrate 30 is attached by bonding to a stepped portion of the recess 9A of the base 2 of the package 4 using a bonding member B1. Then, the physical quantity detection element 10 is attached by bonding to the support substrate 30 attached to the base 2 using a bonding member B2.

[0155] In step SP3, the drive arms are adjusted based on the detection signals. Specifically, in FIG. 11, the first detection signal S1A from the first detection electrode ES1A of the first detection arm AS1 is input to the first amplifier circuit 121 to measure the unwanted signal due to unwanted vibration of the first detection arm AS1. The third detection signal S2A from the third detection electrode ES2A of the second detection arm AS2 is input to the second amplifier circuit 122 to measure the unwanted signal due to unwanted vibration of the second detection arm AS2. Based on the measurement results of these unwanted signals, at least one of the drive arms 18P to 18S in FIG. 2 is adjusted. In other words, balance tuning is performed. Specifically, an energy beam such as a laser is irradiated onto a gold film, for example, approximately 1 μm thick, formed on the weights 27P to 27S at the tips of the drive arms 18P to 18S to remove part of the gold film. Removing the gold film increases the frequency. Alternatively, a method of adding a gold film by sputtering or vapor deposition using a metal mask to lower the frequency may be used.

[0156] In balance tuning, the mass of the weights attached to each drive arm is adjusted while measuring the detection signal generated by unwanted vibrations, thereby reducing unwanted vibrations. In balance tuning, the unwanted signals generated by the two detection arms are measured separately, and the amount of machining of the drive arms is calculated based on the measured values. By changing the mass of the weights in this way, it is possible to adjust the frequency generated by the drive arms and suppress the generation of unwanted signals due to unwanted vibrations in the detection arms. Furthermore, since balance tuning is performed after the physical quantity detection element 10 is mounted on the package 4 or the support substrate 30, a more reliable physical quantity detection device 1 can be provided. Furthermore, because the detection signal is amplified by the first amplifier circuit 121 and the second amplifier circuit 122, even a small unwanted signal detected by the detection electrode can be reliably measured.

[0157] In step SP4, the connection between the second wiring LS1B and ground and the connection between the fourth wiring LS2B and ground are severed. Specifically, as shown in FIGS. 9 and 12, the connection between the second wiring LS1B and the first ground wiring LG1 is severed, and the connection between the fourth wiring LS2B and the second ground wiring LG2 is severed. For example, an energy beam such as a laser is irradiated onto the connection lines CSG1 and CSG2 in FIGS. 8 and 11 to severe the connection between each wiring and the ground wiring. Then, cut marks CT1 and CT2 as shown in FIGS. 9, 12, and 17 remain, indicating that each wiring and the ground wiring have been severed.

[0158] 9 and 12, the pad PS1B to which the second wiring LS1B is connected and the pad PS2A to which the third wiring LS2A is connected are connected by a bonding wire BW1, thereby connecting the second wiring LS1B to the third wiring LS2A. Also, the pad PS2B to which the fourth wiring LS2B is connected and the pad PS1A to which the first wiring LS1A is connected are connected by a bonding wire BW2, thereby connecting the fourth wiring LS2B to the first wiring LS1A.

[0159] 1 to 18, the manufacturing method of this embodiment includes a first step (SP1) of preparing the physical quantity detection element 10 and the support substrate 30, a second step (SP2) of attaching the physical quantity detection element 10 to the support substrate 30, and a third step (SP3) of adjusting at least one of the multiple drive arms. The manufacturing method of this embodiment also includes a fourth step (SP4) of disconnecting the second wiring LS1B from the ground and the fourth wiring LS2B from the ground, and a fifth step (SP5) of connecting the second wiring LS1B to the third wiring LS2A and connecting the fourth wiring LS2B to the first wiring LS1A.

[0160] In this way, for example, before the fourth step (SP4), the second wiring LS1B and the ground and the fourth wiring LS2B and the ground are connected. Therefore, the first detection signal S1A from the first detection electrode ES1A of the first detection arm AS1 is input to the first amplifier circuit 121, and the third detection signal S2A from the third detection electrode ES2A of the second detection arm AS2 is input to the second amplifier circuit 122. This allows the detection signals of the first detection arm AS1 and the second detection arm AS2 to be measured individually, thereby enabling balance tuning and the like to be achieved. Furthermore, after the fourth step (SP4) and the fifth step (SP5), the connections between the second wiring LS1B and the ground and between the fourth wiring LS2B and the ground are disconnected, and the second wiring LS1B is connected to the third wiring LS2A, and the fourth wiring LS2B is connected to the first wiring LS1A. Therefore, the first detection signal S1A from the first detection electrode ES1A and the fourth detection signal S2B from the fourth detection electrode ES2B can be input to the first amplifier circuit 121, and the third detection signal S2A from the third detection electrode ES2A and the second detection signal S1B from the second detection electrode ES1B can be input to the second amplifier circuit 122. This makes it possible to achieve, for example, improved sensitivity by doubling wiring.

[0161] As described above, the physical quantity detection device of this embodiment includes a circuit device having a physical quantity detection element having multiple detection arms, multiple drive arms, and a base, a support substrate that supports the physical quantity detection element at the base, and a detection circuit that detects a physical quantity based on multiple detection signals from the multiple detection arms of the physical quantity detection element. The physical quantity detection element also includes, as the multiple detection arms, a first detection arm having first and second detection electrodes and extending from the base, and a second detection arm having third and fourth detection electrodes and extending from the base in the opposite direction to the first detection arm. The detection circuit of the circuit device also includes a first amplifier circuit to which the first detection signal from the first detection electrode and the fourth detection signal from the fourth detection electrode are input during operation, and a second amplifier circuit to which the third detection signal from the third detection electrode and the second detection signal from the second detection electrode are input during operation. The support substrate also includes a first wiring having one end connected to the first detection electrode, a second wiring having one end connected to the second detection electrode, a third wiring having one end connected to the third detection electrode, and a fourth wiring having one end connected to the fourth detection electrode. The second wiring is connected to ground on the support substrate during testing and to the third wiring during operation, and the fourth wiring is connected to ground on the support substrate during testing and to the first wiring during operation.

[0162] According to this embodiment, during testing, the second wiring and the fourth wiring are connected to ground, so that the second detection electrode connected to the second wiring and the fourth detection electrode connected to the fourth wiring are connected to ground. This allows the first detection signal from the first detection electrode of the first detection arm to be input to the first amplifier circuit, and the third detection signal from the third detection electrode of the second detection arm to be input to the second amplifier circuit, allowing the detection signals of the first detection arm and the second detection arm to be measured individually. Furthermore, during operation, the second wiring is connected to the third wiring, and the fourth wiring is connected to the first wiring. Therefore, the first detection signal from the first detection electrode and the fourth detection signal from the fourth detection electrode can be input to the first amplifier circuit, and the third detection signal from the third detection electrode and the second detection signal from the second detection electrode can be input to the second amplifier circuit, thereby improving sensitivity, etc.

[0163] In addition, in this embodiment, the support substrate may include a first ground wiring and a second ground wiring, and during testing, the first ground wiring and the second wiring may be connected, and the second ground wiring and the fourth wiring may be connected.

[0164] In this way, during testing, the first ground wiring and the second wiring are connected to each other, so that the second wiring is connected to ground, and the second ground wiring and the fourth wiring are connected to each other, so that the fourth wiring is connected to ground.

[0165] In this embodiment, the support substrate may have a first cut trace between the second wiring and the first ground wiring, and a second cut trace between the fourth wiring and the second ground wiring.

[0166] When the support substrate has such first cut traces and second cut traces, it is indicated during inspection that the second wiring and the fourth wiring have been connected to ground.

[0167] In this embodiment, the first cut trace and the second cut trace may not overlap the physical amount detection element in plan view.

[0168] In this way, even if the connection between the second wiring and the first ground wiring or the connection between the fourth wiring and the second ground wiring is cut, it is possible to prevent the adverse effects of this cutting from reaching the physical quantity detection element.

[0169] In this embodiment, the first cut trace and the second cut trace may not overlap the circuit device in a plan view.

[0170] In this way, even if the connection between the second wiring and the first ground wiring or the connection between the fourth wiring and the second ground wiring is cut, it is possible to prevent the circuit device from being adversely affected by the cut.

[0171] In addition, in this embodiment, the support substrate may include a first terminal for connecting to a first amplifier circuit and a second terminal for connecting to a second amplifier circuit, and the first terminal may be connected to a first wiring and the second terminal may be connected to a third wiring.

[0172] In this way, the first detection signal from the first detection electrode of the first detection arm can be input to the first amplifier circuit via the first wiring and the first terminal, and the third detection signal from the third detection electrode of the second detection arm can be input to the second amplifier circuit via the third wiring and the second terminal.

[0173] In this embodiment, the second wiring may be disconnected from the second terminal during testing, and the fourth wiring may be disconnected from the first terminal during testing.

[0174] In this way, during testing, the second detection electrode connected to the second wiring is not electrically connected to the second amplifier circuit via the first terminal, and the fourth detection electrode connected to the fourth wiring is not electrically connected to the first amplifier circuit via the second terminal.

[0175] In addition, in this embodiment, the support substrate includes a first pad connected to the first wiring, a second pad connected to the second wiring, a third pad connected to the third wiring, and a fourth pad connected to the fourth wiring, and during operation, the second pad and the third pad may be connected, and the fourth pad and the first pad may be connected.

[0176] In this way, by connecting the second pad and the third pad, the second wiring and the third wiring can be connected, and by connecting the fourth pad and the first pad, the fourth wiring and the first wiring can be connected.

[0177] In this embodiment, the second pad and the third pad may be connected by a first bonding wire, and the fourth pad and the first pad may be connected by a second bonding wire.

[0178] In this way, by connecting the second pad and the third pad with the first bonding wire, the second wiring and the third wiring can be connected, and by connecting the fourth pad and the first pad with the second bonding wire, the fourth wiring and the first wiring can be connected.

[0179] In this embodiment, the first pad, the second pad, the third pad, and the fourth pad may not overlap the physical amount detection element in a plan view.

[0180] In this way, even when wiring connections are made using the first pad, second pad, third pad, and fourth pad, it is possible to prevent adverse effects of the wiring connections from reaching the physical quantity detection element.

[0181] In this embodiment, the first pad, the second pad, the third pad, and the fourth pad may not overlap the circuit device in a plan view.

[0182] In this way, even when wiring connections are made using the first, second, third, and fourth pads, it is possible to prevent adverse effects of these wiring connections from affecting the circuit device.

[0183] The manufacturing method of this embodiment is a manufacturing method for a physical quantity detection device including a circuit device having a physical quantity detection element having multiple detection arms, multiple drive arms, and a base, a support substrate that supports the physical quantity detection element at the base, and a detection circuit that detects a physical quantity based on multiple detection signals from the multiple detection arms of the physical quantity detection element. The physical quantity detection element includes, as the multiple detection arms, a first detection arm having first and second detection electrodes and extending from the base, and a second detection arm having third and fourth detection electrodes and extending from the base in the opposite direction to the first detection arm. The detection circuit of the circuit device also includes an amplifier circuit that, during operation, inputs a first detection signal from the first detection electrode and a fourth detection signal from the fourth detection electrode to a first input node, and inputs a third detection signal from the third detection electrode and a second detection signal from the second detection electrode to a second input node. The support substrate includes a first wiring having one end connected to the first detection electrode, a second wiring having one end connected to the second detection electrode, a third wiring having one end connected to the third detection electrode, and a fourth wiring having one end connected to the fourth detection electrode. The manufacturing method of this embodiment includes a first step of preparing the physical quantity detection element and the support substrate, a second step of attaching the physical quantity detection element to the support substrate, and a third step of adjusting at least one of the multiple drive arms. The manufacturing method of this embodiment also includes a fourth step of disconnecting the second wiring from ground and the fourth wiring from ground, and a fifth step of connecting the second wiring to the third wiring and the fourth wiring to the first wiring.

[0184] In this way, before the fourth step, the first detection signal from the first detection electrode of the first detection arm is input to the first amplifier circuit, and the third detection signal from the third detection electrode of the second detection arm is input to the second amplifier circuit, making it possible to measure the detection signals on the first detection arm and the second detection arm individually. After the fourth and fifth steps, the first detection signal from the first detection electrode and the fourth detection signal from the fourth detection electrode can be input to the first amplifier circuit, and the third detection signal from the third detection electrode and the second detection signal from the second detection electrode can be input to the second amplifier circuit.

[0185] Although the present embodiment has been described in detail above, those skilled in the art will readily understand that many modifications are possible without substantially departing from the novel features and advantages of the present invention. Therefore, all such modifications are intended to be within the scope of the present invention. For example, a term described at least once in the specification or drawings together with a different term having a broader or equivalent meaning may be replaced with that different term anywhere in the specification or drawings. Furthermore, the configurations of the physical quantity detection device, supporting substrate, physical quantity detection element, and circuit device are not limited to those described in the present embodiment, and various modifications are possible. [Explanation of symbols]

[0186] 1...physical quantity detection device, 2...base, 3...lid, 4...package, 5A, 5B...jointing member, 6A, 6B, 7A, 7B...internal terminal, 8A, 8B...external terminal, 9, 9A, 9B, 9C...recess, 10...physical quantity detection element, 11...vibration bar, 12P...vibration bar, 12Q...vibration bar, 13...drive electrode, 14...drive electrode, 15A, 15B, 16A, 16B...detection electrode, 18P, 18Q, 18R, 18S...drive arm, 19P, 19Q...detection arm, 20...circuit device, 21...base, 22P, 22Q...connecting arm, 23, 24, 25A, 25B, 26A, 26B...end element, 27P, 27Q, 27R, 27S, 28P, 28Q...weight portion, 30...support substrate, 40...frame portion, 41, 42...support portion, 43...metal film, 51, 52...connecting portion, 70...element mounting portion, 71, 72, 73...beam, 74...beam portion, 100...drive circuit, 102...amplification circuit, 104...gain control circuit, 106...drive signal output circuit, 108...synchronization signal output circuit, 110...detection circuit, 120...amplification circuit, 121...first amplifier circuit, 122...second amplifier circuit, 124...differential amplifier circuit, 126...AC amplifier circuit, 130...synchronous detection circuit, 132...filter circuit circuit, 134...A / D conversion circuit, 150...processing circuit, AS1...first detection arm, AS2...second detection arm, B1, B2...jointing member, BW, BW1, BW2...bonding wire, CSG1, CSG2...connecting line, CT1, CT2...cut trace, DG...feedback signal, DS...drive signal, EDG, EDS...drive electrode, ES1A...first detection electrode, ES1B...second detection electrode, ES2A...third detection electrode, ES2B...fourth detection electrode, FDG, FDS, FS1A, FS1B, FS2A, FS2B...terminal, LDG, LDS...wiring, LG1...first ground Ground wiring, LG2...second ground wiring, LGND...wiring, LS1A...first wiring, LS1B...second wiring, LS2A...third wiring, LS2B...fourth wiring, N1...first input node, N2...second input node, PS1A, PS1B, PS2A, PS2B...pad, S...accommodation space, S1A...first detection signal, S1B...second detection signal, S2A...third detection signal, S2B...fourth detection signal, SD1, SD2, SD3, SD4...inner periphery, SF1, SF2...surface, TDG, TDS, TGND, TS1A...pin, TS1B...pin, TS2A...pin, TS2B...pin

Claims

1. a physical quantity detection element having a plurality of detection arms, a plurality of drive arms, and a base; a support substrate that supports the physical quantity detection element at the base; a circuit device having a detection circuit that detects a physical quantity based on a plurality of detection signals from the plurality of detection arms of the physical quantity detection element; Including, The physical quantity detection element has the following detection arms: a first detection arm extending from the base, the first detection arm having a first detection electrode and a second detection electrode; a second detection arm having a third detection electrode and a fourth detection electrode and extending from the base in a direction opposite to the first detection arm; Including, The detection circuit of the circuit device includes: an amplifier circuit that, during operation, receives a first detection signal from the first detection electrode and a fourth detection signal from the fourth detection electrode at a first input node, and receives a third detection signal from the third detection electrode and a second detection signal from the second detection electrode at a second input node; The support substrate is a first wiring having one end connected to the first detection electrode; a second wiring having one end connected to the second detection electrode; a third wiring having one end connected to the third detection electrode; a fourth wiring having one end connected to the fourth detection electrode; Including, The second wiring is In the support substrate, the wiring is connected to ground during testing and to the third wiring during operation; The fourth wiring is The physical quantity detection device is characterized in that the supporting substrate is connected to ground during testing and connected to the first wiring during operation.

2. 2. The physical quantity detection device according to claim 1, The support substrate is a first ground wiring; A second ground wiring; Including, A physical quantity detection device, characterized in that, during an inspection, the first ground wiring and the second wiring are connected, and the second ground wiring and the fourth wiring are connected.

3. 3. The physical quantity detection device according to claim 2, The support substrate is a first cut trace is formed between the second wiring and the first ground wiring; a second cut trace between the fourth wiring and the second ground wiring;

4. 4. The physical quantity detection device according to claim 3, The physical quantity detection device, wherein the first cut trace and the second cut trace do not overlap the physical quantity detection element in a plan view.

5. 4. The physical quantity detection device according to claim 3, The physical quantity detection device, wherein the first cutting trace and the second cutting trace do not overlap with the circuit device in a plan view.

6. 2. The physical quantity detection device according to claim 1, The support substrate is a first terminal for connection to the first input node of the amplifier circuit; a second terminal for connection to the second input node of the amplifier circuit; Including, the first terminal is connected to the first wiring; The physical quantity detection device is characterized in that the second terminal is connected to the third wiring.

7. 7. The physical quantity detection device according to claim 6, the second wiring is not connected to the second terminal during testing; The physical quantity detection device, wherein the fourth wiring is not connected to the first terminal during an inspection.

8. 2. The physical quantity detection device according to claim 1, The support substrate is a first pad connected to the first wiring; a second pad connected to the second wiring; a third pad connected to the third wiring; a fourth pad connected to the fourth wiring; Including, A physical quantity detection device, characterized in that, during operation, the second pad and the third pad are connected, and the fourth pad and the first pad are connected.

9. 9. The physical quantity detection device according to claim 8, the second pad and the third pad are connected by a first bonding wire; The physical quantity detection device, wherein the fourth pad and the first pad are connected by a second bonding wire.

10. 9. The physical quantity detection device according to claim 8, The physical quantity detection device, wherein the first pad, the second pad, the third pad, and the fourth pad do not overlap the physical quantity detection element in a plan view.

11. 9. The physical quantity detection device according to claim 8, The physical quantity detection device, wherein the first pad, the second pad, the third pad, and the fourth pad do not overlap the circuit device in a plan view.

12. A method for manufacturing a physical quantity detection device including: a physical quantity detection element having a plurality of detection arms, a plurality of drive arms, and a base; a support substrate that supports the physical quantity detection element at the base; and a circuit device having a detection circuit that detects a physical quantity based on a plurality of detection signals from the plurality of detection arms of the physical quantity detection element, The physical quantity detection element has the following detection arms: a first detection arm extending from the base, the first detection arm having a first detection electrode and a second detection electrode; a second detection arm having a third detection electrode and a fourth detection electrode and extending from the base in a direction opposite to the first detection arm; Including, The detection circuit of the circuit device includes: an amplifier circuit that, during operation, receives a first detection signal from the first detection electrode and a fourth detection signal from the fourth detection electrode at a first input node, and receives a third detection signal from the third detection electrode and a second detection signal from the second detection electrode at a second input node; The support substrate is a first wiring having one end connected to the first detection electrode; a second wiring having one end connected to the second detection electrode; a third wiring having one end connected to the third detection electrode; a fourth wiring having one end connected to the fourth detection electrode; Including, a first step of preparing the physical quantity detection element and the support substrate; a second step of attaching the physical quantity detection element to the support substrate; a third step of adjusting at least one of the plurality of drive arms; a fourth step of disconnecting the second wiring and the ground and the fourth wiring and the ground; a fifth step of connecting the second wiring to the third wiring and connecting the fourth wiring to the first wiring; A method for manufacturing a physical quantity detection device, comprising:

Images