Upper electrode, manufacturing apparatus of semiconductor device including the same, and manufacturing method of semiconductor device

Abstract

To provide: an upper electrode in which a uniform plasma is uniformly formed as a whole, residual by-products are suppressed from generating, and an occurrence of defects is prevented; a manufacturing apparatus of a semiconductor device including the same; and a manufacturing method of the semiconductor device.SOLUTION: An upper electrode includes: a flat first upper surface 221; and a first lower surface 222 opposite the first upper surface. The upper electrode further includes a thickness from the first upper surface to the first lower surface. The first lower surface includes: a first profile P1 corresponding to a central region of the first lower surface and having a first thickness change rate of -0.1 to 0; a third profile P3 surrounding the first profile and having a third thickness change rate of -0.115 to -0.122; and a fifth profile P5 surrounding a third profile and having a fifth thickness change rate of -0.003 to 0.003. Therein first thickness change rate, the third thickness change rate, and the fifth thickness change rate are values obtained by dividing a change in thickness by a change in radius along a flat horizontal direction parallel to the first upper surface from a center of the first lower surface.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The embodiments relate to an upper electrode, a manufacturing apparatus for a semiconductor device including the upper electrode, and a manufacturing method for a semiconductor device. [Background technology]

[0002] A typical showerhead for semiconductor etching is equipment used to etch a silicon wafer in a semiconductor manufacturing chamber by spraying gas in a plasma state onto the wafer.

[0003] The showerhead has a number of gas injection holes through which gas in a plasma state passes.

[0004] In order to precisely etch the wafer, the holes in the showerhead must be precisely produced.

[0005] To this end, as in Prior Art Document 1 (Korean Patent Registration No. 10-0299975) and Prior Art Document 2 (Korean Patent Registration No. 10-0935418), an abrasive and a silicon disk are placed opposite a drilling plate with multiple protruding chips, and an abrasive is supplied to the drilling plate and the disk, and ultrasonic waves are applied to the drilling plate to drill a hole in the disk.

[0006] In Prior Art Documents 1 and 2, when processing a thick showerhead, the length of the pin inserted into the drilling plate becomes long, which causes the pin to vibrate when ultrasonic waves are generated, resulting in a problem of uneven formation of holes in the showerhead.

[0007] In particular, silicon carbide (Sic), which is a 1:1 bond between silicon (Si) and carbon (C), is a strong covalent bond material and has higher thermal conductivity than other ceramic materials, as well as excellent wear resistance, high-temperature strength, and chemical resistance. As a result, it is widely used to reinforce, complement, or replace weaker materials in essential fields. In particular, with a Mohs hardness of 9.2, second only to diamond, it has excellent durability and is widely used in the field of semiconductor parts. Summary of the Invention [Problem to be solved by the invention]

[0008] The embodiments aim to provide an upper electrode that can uniformly form a uniform plasma throughout, suppress residual by-products, and prevent the occurrence of defects, as well as a semiconductor device manufacturing apparatus and method including the same. [Means for solving the problem]

[0009] In one embodiment, an upper electrode includes a flat upper surface and a lower surface opposite the upper surface, and includes a thickness from the upper surface to the lower surface, the lower surface corresponding to a central region of the lower surface and including a first profile having a first thickness change rate of -0.1 to 0; a second profile surrounding the first profile and having a second thickness change rate; a third profile surrounding the first profile and having a third thickness change rate of -0.115 to -0.122; a fourth profile surrounding the third profile and having a fourth thickness change rate; and a fifth profile surrounding the fourth profile and having a fifth thickness change rate of -0.003 to 0.003, wherein the first thickness change rate, the second thickness change rate, the third thickness change rate, the fourth thickness change rate, and the fifth thickness change rate are values ​​obtained by dividing the thickness change by the change in radius along a horizontal direction from the center of the lower surface to the flat upper surface.

[0010] In an upper electrode according to one embodiment, the first profile may be from the center of the upper surface to a first radius in the horizontal direction, the third profile may be from a second radius larger than the first radius to a third radius in the horizontal direction, and the fifth profile may be from a fourth radius larger than the third radius to a fifth radius.

[0011] In an upper electrode according to one embodiment, the first radius may be 7.5 mm to 9.5 mm, the second radius may be 11 mm to 14 mm, the third radius may be 48 mm to 54 mm, the fourth radius may be 88 mm to 92 mm, and the fifth radius may be 98 mm to 102 mm.

[0012] In the upper electrode according to an embodiment, the deviation of the third thickness change rate in the third profile may be less than 0.005.

[0013] In the upper electrode according to an embodiment, the deviation of the fifth thickness change rate in the fifth profile may be less than 0.005.

[0014] In one embodiment, the upper electrode may include single crystal silicon, and may have a thickness of 14 mm to 20 mm at the center of the lower surface and a thickness of 6 mm to 10 mm at the fifth profile.

[0015] In an upper electrode according to one embodiment, the lower surface may include a second profile disposed between the first profile and the third profile, and a fourth profile disposed between the third profile and the fifth profile.

[0016] In the upper electrode according to one embodiment, the second profile may have a second thickness change rate of −0.12 to −0.08, and the fourth profile may have a fourth thickness change rate of −0.12 to 0.003.

[0017] In the upper electrode according to an embodiment, the second thickness change rate may gradually decrease with increasing distance from the center of the lower surface, and the fourth thickness change rate may gradually increase with increasing distance from the center of the lower surface.

[0018] The upper electrode according to one embodiment may include single crystal silicon, and the first profile, the second profile, the third profile, the fourth profile, and the fifth profile may be integrally connected.

[0019] According to one embodiment, a semiconductor device manufacturing apparatus includes an upper electrode facing a semiconductor substrate and injecting a process gas; a support portion supporting the semiconductor substrate and disposed below the semiconductor substrate; and a focus ring provided on the support portion and surrounding the periphery of the semiconductor substrate, wherein the upper electrode includes a flat upper surface and a lower surface facing the upper surface, and a thickness from the upper surface to the lower surface, the lower surface including a first profile corresponding to a central region of the lower surface and having a first thickness change rate of -0.1 to 0; a third profile surrounding the first profile and having a third thickness change rate of -0.115 to -0.122; and a fifth profile surrounding the third profile and having a fifth thickness change rate of -0.003 to 0.003, wherein the first thickness change rate, the third thickness change rate, and the fifth thickness change rate are values ​​obtained by dividing the change in thickness by the change in radius from the center of the lower surface along a horizontal direction flat to the upper surface.

[0020] A method for manufacturing a semiconductor device according to an embodiment includes the steps of placing a semiconductor substrate in a semiconductor device manufacturing apparatus and processing the semiconductor substrate, the semiconductor device manufacturing apparatus including an upper electrode facing the semiconductor substrate and injecting a process gas; a support portion supporting the semiconductor substrate and disposed below the semiconductor substrate; and a focus ring surrounding the semiconductor substrate and provided on the support portion, the upper electrode including a flat upper surface and a lower surface opposite to the upper surface, a thickness from the upper surface to the lower surface, and a front surface. The lower surface includes a first profile corresponding to a central region of the lower surface and having a first thickness change rate of -0.1 to 0; a third profile surrounding the first profile and having a third thickness change rate of -0.115 to -0.122; and a fifth profile surrounding the third profile and having a fifth thickness change rate of -0.003 to 0.003, wherein the first thickness change rate, the third thickness change rate, and the fifth thickness change rate are values ​​obtained by dividing the change in thickness by the change in radius from the center of the lower surface along a horizontal direction flat to the upper surface.

[0021] According to one embodiment, the upper electrode includes a flat upper surface and a lower surface opposite to the upper surface, and includes a thickness from the upper surface to the lower surface, the lower surface corresponding to a central region of the lower surface, and includes a first profile having a first thickness change rate that gradually decreases from the center of the lower surface to the outer periphery within a range of -0.385 to 0; a second profile surrounding the first profile and having a second thickness change rate that is -0.37 to -0.39; a third profile surrounding the second profile and having a third thickness change rate that gradually increases from the center of the lower surface to the outer periphery within a range of -0.385 to 0; a fourth profile having a fourth thickness change rate in the range of 0 to 0.105, which gradually increases from the center of the lower surface to the outer periphery; a fifth profile surrounding the fourth profile and having a fifth thickness change rate of 0.1 to 0.11; and a seventh profile surrounding the fifth profile and having a seventh thickness change rate of -0.003 to 0.003, wherein the first thickness change rate, the second thickness change rate, the third thickness change rate, the fourth thickness change rate, the fifth thickness change rate, and the seventh thickness change rate are values ​​obtained by dividing the change in thickness by the change in radius from the center of the lower surface along a horizontal direction parallel to the upper surface.

[0022] In an upper electrode according to one embodiment, the first profile may be from the center of the upper surface to a first radius in the horizontal direction, the second profile may be from the first radius to a second radius in the horizontal direction, the third profile may be from the second radius to a third radius in the horizontal direction, the fourth profile may be from the third radius to a fourth radius in the horizontal direction, and the fifth profile may be from the fourth radius to a fifth radius.

[0023] In an upper electrode according to one embodiment, the first radius may be one of 3 mm to 5 mm, the second radius may be one of 8 mm to 10 mm, the third radius may be one of 75 mm to 85 mm, the fourth radius may be one of 108 mm to 114 mm, and the fifth radius may be one of 138 mm to 141 mm.

[0024] In the upper electrode according to an embodiment, the deviation of the second thickness change rate in the second profile may be less than 0.03.

[0025] In the upper electrode according to an embodiment, the deviation of the fourth thickness change rate in the fourth profile may be less than 0.03.

[0026] In the upper electrode according to an embodiment, the deviation of the seventh thickness change rate in the seventh profile may be less than 0.003.

[0027] In the upper electrode according to an embodiment, the first thickness change rate at the center may be −0.003 to 0.003, and the first thickness change rate at the first radius may be −0.37 to −0.39.

[0028] In the upper electrode according to an embodiment, the third thickness change rate at the second radius may be −0.37 to −0.39, and the third thickness change rate at the third radius may be −0.003 to 0.003.

[0029] In the upper electrode according to an embodiment, the fourth thickness change rate at the third radius may be −0.003 to 0.003, and the fourth thickness change rate at the fourth radius may be 0.1 to 0.11.

[0030] In one embodiment, the upper electrode may include single crystal silicon and have a thickness of 22 mm to 25 mm at the center of the lower surface, a thickness of 9 mm to 12 mm in the region where the third profile and the fourth profile intersect, and a thickness of 11 mm to 16 mm in the seventh profile.

[0031] In the upper electrode according to an embodiment, the lower surface may include a sixth profile disposed between the fifth profile and the seventh profile.

[0032] In the upper electrode according to an embodiment, the sixth profile may have a sixth thickness change rate in a range of 0 to 0.11, which gradually decreases from the center to the periphery.

[0033] According to one embodiment, the upper electrode includes single crystal silicon, and the first profile, the second profile, the third profile, the fourth profile, the fifth profile, the sixth profile, and the seventh profile may be connected together.

[0034] In an upper electrode according to an embodiment, a ratio of the sum of the widths of the first profile, the second profile, and the third profile to the sum of the widths of the fourth profile, the fifth profile, and the sixth profile may be 51:49 to 59:41.

[0035] According to one embodiment, an apparatus for manufacturing a semiconductor device includes an upper electrode disposed above a semiconductor substrate and configured to generate plasma; an electrostatic chuck disposed below the semiconductor substrate and supporting the semiconductor substrate; and a focus ring attached to the electrostatic chuck, the upper electrode including a flat upper surface and a lower surface facing the upper surface, the upper surface including a thickness from the upper surface to the lower surface, the lower surface including a first profile corresponding to a central region of the lower surface and having a first thickness change rate that gradually decreases from the center of the lower surface to an outer periphery within a range of -0.385 to 0; a second profile surrounding the first profile and having a second thickness change rate that is -0.37 to -0.39; and a second profile surrounding the second profile and having a second thickness change rate that is -0.385 to 0. a third profile having a third thickness change rate that gradually increases from the center to the outer periphery; a fourth profile surrounding the third profile and having a fourth thickness change rate that gradually increases within a range of 0 to 0.105 from the center of the lower surface to the outer periphery; a fifth profile surrounding the fourth profile and having a fifth thickness change rate of 0.1 to 0.11; and a seventh profile surrounding the fifth profile and having a seventh thickness change rate of -0.003 to 0.003, wherein the first thickness change rate, the second thickness change rate, the third thickness change rate, the fourth thickness change rate, the fifth thickness change rate, and the seventh thickness change rate may be values ​​obtained by dividing the change in thickness by the change in radius along a horizontal direction from the center of the lower surface parallel to the upper surface.

[0036] According to one embodiment, a method for manufacturing a semiconductor device includes placing a semiconductor substrate in a semiconductor device manufacturing apparatus and processing the semiconductor substrate, the semiconductor device manufacturing apparatus including: an upper electrode disposed on the semiconductor substrate and configured to generate plasma; an electrostatic chuck supporting the semiconductor substrate and disposed below the semiconductor substrate; and a focus ring attached to the electrostatic chuck, the upper electrode including a flat upper surface and a lower surface facing the upper surface, the upper surface including a thickness from the upper surface to the lower surface, the lower surface including a first profile corresponding to a central region of the lower surface and having a first thickness change rate that gradually decreases from the center of the lower surface to an outer periphery within a range of -0.385 to 0; a second profile surrounding the first profile and having a second thickness change rate of -0.37 to -0.39; a third profile surrounding the second profile and having a third thickness change rate that gradually increases from the center of the lower surface to the outer periphery within a range of -0.385 to 0; a fourth profile surrounding the third profile and having a fourth thickness change rate that gradually increases from the center of the lower surface to the outer periphery within a range of 0 to 0.105; a fifth profile surrounding the fourth profile and having a fifth thickness change rate of 0.1 to 0.11; and a seventh profile surrounding the fifth profile and having a seventh thickness change rate of -0.003 to 0.003, wherein the first thickness change rate, the second thickness change rate, the third thickness change rate, the fourth thickness change rate, the fifth thickness change rate, and the seventh thickness change rate may be values ​​obtained by dividing the change in thickness by the change in radius along a horizontal direction from the center of the lower surface parallel to the upper surface.

[0037] An upper electrode according to one embodiment includes a flat upper surface and a lower surface opposite the upper surface, and includes a thickness from the upper surface to the lower surface, the lower surface corresponding to a central region of the lower surface, and includes a first profile having a first thickness change rate of -0.25 to 0; a second profile surrounding the first profile and having a second thickness change rate of -0.25 to -0.24; a fourth profile surrounding the second profile and having a fourth thickness change rate of -0.003 to 0.003; a sixth profile surrounding the fourth profile and having a sixth thickness change rate of 0.13 to 0.14; and an eighth profile surrounding the sixth profile and having an eighth thickness change rate of -0.003 to 0.003, wherein the first thickness change rate, the second thickness change rate, the fourth thickness change rate, the sixth thickness change rate, and the eighth thickness change rate are values ​​obtained by dividing the thickness change by the change in radius along a horizontal direction from the center of the lower surface parallel to the upper surface.

[0038] In an upper electrode according to one embodiment, the first profile may be from the center of the upper surface to a first radius in the horizontal direction, the second profile may be from the first radius to a second radius in the horizontal direction, the fourth profile may be from a third radius to a fourth radius in the horizontal direction, the sixth profile may be from a fifth radius to a sixth radius in the horizontal direction, and the eighth profile may be from a seventh radius to an eighth radius.

[0039] In an upper electrode according to one embodiment, the first radius may be one of 3 mm to 5 mm, the second radius may be one of 16 mm to 19 mm, the third radius may be one of 69 mm to 71 mm, the fourth radius may be one of 74 mm to 76 mm, the fifth radius may be one of 106 mm to 108 mm, the sixth radius may be one of 138 mm to 139.5 mm, the seventh radius may be one of 141 mm to 142 mm, and the eighth radius may be one of 144.5 mm to 150 mm.

[0040] In the upper electrode according to an embodiment, the deviation of the second thickness change rate in the second profile may be less than 0.01.

[0041] In the upper electrode according to an embodiment, the deviation of the fourth thickness change rate in the fourth profile may be less than 0.003.

[0042] In the upper electrode according to an embodiment, the deviation of the eighth thickness change rate in the eighth profile may be less than 0.003.

[0043] In one embodiment, the upper electrode may include single crystal silicon, and may have a thickness of 15 mm to 25 mm at the center of the lower surface, a thickness of 8 mm to 12 mm in the sixth profile, and a thickness of 14 mm to 17 mm in the eighth profile.

[0044] In an upper electrode according to one embodiment, the lower surface may include a third profile disposed between the second profile and the fourth profile; a fifth profile disposed between the fourth profile and the sixth profile; and a seventh profile disposed between the sixth profile and the eighth profile.

[0045] In an upper electrode according to one embodiment, the third profile may have a third thickness change rate of -0.24 to 0, the fifth profile may have a fifth thickness change rate of 0 to 0.12, and the seventh profile may have a seventh thickness change rate of 0 to 0.13.

[0046] In an upper electrode according to one embodiment, the third thickness change rate may gradually increase as the distance from the center of the lower surface increases, the fifth thickness change rate may gradually increase as the distance from the center of the lower surface increases, and the seventh thickness change rate may gradually decrease as the distance from the center of the lower surface increases.

[0047] In one embodiment, the upper electrode includes single crystal silicon, and the first profile, the second profile, the third profile, the fourth profile, the fifth profile, the sixth profile, the seventh profile, and the eighth profile may be connected together.

[0048] According to one embodiment, an apparatus for manufacturing a semiconductor device includes an upper electrode disposed above a semiconductor substrate to generate plasma; an electrostatic chuck disposed below the semiconductor substrate and supporting the semiconductor substrate; and a focus ring attached to the electrostatic chuck, the upper electrode including a flat upper surface and a lower surface opposite the upper surface, the focus ring including a thickness from the upper surface to the lower surface, the lower surface corresponding to a central region of the lower surface, a first profile having a first thickness change rate of -0.25 to 0; and a second thickness change rate surrounding the first profile and having a second thickness change rate of -0.25 to -0.24. a second profile having a fourth thickness change rate of -0.003 to 0.003; a fourth profile surrounding the second profile and having a fourth thickness change rate of -0.003 to 0.003; a sixth profile surrounding the fourth profile and having a sixth thickness change rate of 0.13 to 0.14; and an eighth profile surrounding the sixth profile and having an eighth thickness change rate of -0.003 to 0.003, wherein the first thickness change rate, the second thickness change rate, the fourth thickness change rate, the sixth thickness change rate, and the eighth thickness change rate are values ​​obtained by dividing the change in thickness by the change in radius along a horizontal direction from the center of the lower surface parallel to the upper surface.

[0049] According to an embodiment, a method for manufacturing a semiconductor device includes: placing a semiconductor substrate in a semiconductor device manufacturing apparatus; and processing the semiconductor substrate, the semiconductor device manufacturing apparatus including: an upper electrode disposed on the semiconductor substrate and configured to generate plasma; an electrostatic chuck disposed below the semiconductor substrate and supporting the semiconductor substrate; and a focus ring attached to the electrostatic chuck, the upper electrode including a flat upper surface and a lower surface opposite to the upper surface, the upper surface including a thickness from the upper surface to the lower surface, the lower surface corresponding to a central region of the lower surface, a first profile having a first thickness change rate of -0.25 to 0; a second profile surrounding the first profile and having a second thickness change rate of -0.25 to -0.24; a fourth profile surrounding the second profile and having a fourth thickness change rate of -0.003 to 0.003; a sixth profile surrounding the fourth profile and having a sixth thickness change rate of 0.132 to 0.14; and an eighth profile surrounding the sixth profile and having an eighth thickness change rate of -0.003 to 0.003, wherein the first thickness change rate, the second thickness change rate, the fourth thickness change rate, the sixth thickness change rate, and the eighth thickness change rate are values ​​obtained by dividing the change in thickness by the change in radius along a horizontal direction from the center of the lower surface parallel to the upper surface.

[0050] The upper electrode may be attached to a semiconductor device manufacturing apparatus according to an embodiment. [Effects of the Invention]

[0051] The upper electrode according to the embodiment may have a thickness that varies with radius, such that the lower surface of the upper electrode according to the embodiment includes a first profile having a first thickness change rate, a third profile having a third thickness change rate, and a fifth profile having a fifth thickness change rate.

[0052] In particular, the first thickness change rate may be about −0.1 to about 0, the third thickness change rate may be about −0.115 to about −0.122, and the fifth thickness change rate may be about −0.003 to about 0.003.

[0053] Therefore, the upper electrode according to the embodiment may have a feature that the thickness decreases from the center to the periphery, i.e., the lower surface of the upper electrode according to the embodiment may have a downwardly convex and gradually thin profile at the center.

[0054] As a result, the upper electrode according to the embodiment can reinforce the plasma in the central portion and improve the linearity of the plasma.

[0055] As a result, the upper electrode according to the embodiment can generate a uniform plasma overall.

[0056] In particular, as the diameter of the upper electrode increases, the plasma density may decrease toward the center of the upper electrode, and since the upper electrode has a profile with the above-described thickness change rate, a uniform plasma may be generated overall.

[0057] Furthermore, the upper electrode according to the embodiment can suppress the generation of residual process by-products, that is, the upper electrode according to the embodiment can prevent the adsorption of the residual process by-products.

[0058] Therefore, the upper electrode according to the embodiment can prevent defects such as scratches or chatter marks during the process of manufacturing a semiconductor device.

[0059] In addition, the upper electrode according to the embodiment may have a thickness that varies with radius in the process for manufacturing the semiconductor device, whereby the lower surface of the upper electrode according to the embodiment includes a first profile having a first thickness change rate, a second profile having a second thickness change rate, a third profile having a third thickness change rate, a fourth profile having a fourth thickness change rate, a fifth profile having a fifth thickness change rate, and a seventh profile having a seventh thickness change rate.

[0060] The first thickness change rate is within a range of -0.385 to 0 and gradually decreases from the center of the lower surface to the outer periphery, the second thickness change rate is -0.37 to -0.39, the third profile is within a range of -0.385 to 0 and gradually increases from the center of the lower surface to the outer periphery, the fourth thickness change rate is within a range of 0 to 0.105 and gradually increases from the center of the lower surface to the outer periphery, the fifth thickness change rate is 0.1 to 0.11, and the seventh thickness change rate is -0.003 to 0.003.

[0061] Therefore, the upper electrode according to the embodiment may have a feature that the thickness gradually decreases from the center to the periphery and then increases. That is, the lower surface of the upper electrode according to the embodiment may have a downwardly convex profile at the center, and may have a profile that gradually decreases and then increases. Furthermore, the upper electrode according to the embodiment may have a feature that the thickness changes suddenly near the center.

[0062] Therefore, the upper electrode according to the embodiment reinforces the plasma in the central and outer portions, thereby improving the linearity of the plasma.

[0063] As a result, the upper electrode according to the embodiment can generate a uniform plasma overall.

[0064] In particular, as the diameter of the upper electrode increases, the plasma density at the center and outer periphery of the upper electrode may decrease. In this case, since the upper electrode has a profile with the above-described thickness change rate, a uniform plasma may be realized overall.

[0065] Furthermore, the upper electrode according to the embodiment may implement a uniform plasma overall, thereby suppressing the generation of residual process by-products, i.e., preventing the adsorption of the residual process by-products.

[0066] Therefore, the upper electrode according to the embodiment can prevent defects such as scratches or chatter marks during the process of manufacturing a semiconductor device.

[0067] Furthermore, the upper electrode according to the embodiment can suppress the phenomenon of plasma concentration at a specific portion during the process of manufacturing the semiconductor device, thereby preventing etching of a specific portion.

[0068] As a result, the upper electrode according to the embodiment can suppress excessive wear caused by plasma in the plasma generation region, and thus the semiconductor device manufacturing apparatus including the upper electrode according to the embodiment can have improved durability.

[0069] Additionally, the upper electrode according to the embodiment may have a thickness that varies with radius, such that the lower surface of the upper electrode according to the embodiment includes a first profile having a first thickness change rate, a third profile having a third thickness change rate, and a fifth profile having a fifth thickness change rate.

[0070] The first profile may have a first thickness change rate of -0.25 to 0, the second profile may have a second thickness change rate of -0.25 to -0.24, the fourth profile may have a fourth thickness change rate of -0.003 to 0.003, the sixth profile may have a sixth thickness change rate of 0.13 to 0.14, and the eighth profile may have an eighth thickness change rate of -0.003 to 0.003.

[0071] Therefore, the upper electrode according to the embodiment may have a feature that the thickness gradually decreases from the center to the periphery and then increases again, i.e., the lower surface of the upper electrode according to the embodiment may have a downwardly convex shape at the center and a profile that gradually decreases and then increases in thickness.

[0072] Therefore, the upper electrode according to the embodiment reinforces the plasma in the central and outer portions, thereby improving the linearity of the plasma.

[0073] As a result, the upper electrode according to the embodiment can generate a uniform plasma overall.

[0074] In particular, as the diameter of the upper electrode increases, the plasma density at the center and outer periphery of the upper electrode may decrease. In this case, since the upper electrode has a profile with the above-described thickness change rate, a uniform plasma may be realized overall.

[0075] Furthermore, the upper electrode according to the embodiment can suppress the generation of residual process by-products by realizing a uniform plasma overall, i.e., the upper electrode according to the embodiment can prevent the adsorption of the residual process by-products.

[0076] Therefore, the upper electrode according to the embodiment can prevent defects such as scratches or chatter marks during the process of manufacturing a semiconductor device.

[0077] Furthermore, the upper electrode according to the embodiment can suppress the phenomenon of plasma concentration at a specific portion during the process of manufacturing the semiconductor device, thereby preventing etching of a specific portion.

[0078] As a result, the upper electrode according to the embodiment can suppress excessive wear caused by plasma in the plasma generation region, and thus the semiconductor device manufacturing apparatus including the upper electrode according to the embodiment can have improved durability. [Brief explanation of the drawings]

[0079] [Figure 1] FIG. 2 is a perspective view showing an upper electrode according to an embodiment. [Figure 2] 2 is a cross-sectional view showing one cross section of an upper electrode according to an embodiment; [Figure 3] FIG. 10 is a cross-sectional view showing a cross section of an upper electrode according to another embodiment. [Figure 4] 10 is an enlarged cross-sectional view showing one cross section of an upper electrode according to another embodiment; FIG. [Figure 5] FIG. 10 is a cross-sectional view showing a cross section of an upper electrode according to yet another embodiment. [Figure 6] 10 is an enlarged cross-sectional view showing one cross section of an upper electrode according to still another embodiment; FIG. [Figure 7] FIG. 2 is a perspective view showing a focus ring according to an embodiment. [Figure 8] FIG. 2 is a cross-sectional view showing one cross section of a focus ring according to an embodiment. [Figure 9] 1 is a diagram illustrating an apparatus for manufacturing a semiconductor device according to an embodiment; [Figure 10] 1 is a cross-sectional view of an assembly for confining a plasma region according to one embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0080] In the description of the embodiments, when a component, surface, layer, or substrate is described as being formed "on" or "under" another component, surface, layer, or substrate, "on" and "under" include those formed "directly" or "indirectly via another component." Furthermore, the reference to the top or bottom of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for illustrative purposes and does not represent the actual size.

[0081] The upper electrode according to the embodiment may be a component used in a manufacturing apparatus for manufacturing a semiconductor device, i.e., the upper electrode may be a component constituting a part of the manufacturing apparatus for the semiconductor device.

[0082] The upper electrode may be a component used in a plasma processing apparatus for manufacturing semiconductor devices, or in a plasma etching apparatus for selectively etching a semiconductor substrate.

[0083] The upper electrode may be a part of an upper electrode assembly for injecting plasma.

[0084] The upper electrode may also be a component that forms part of an assembly that houses the wafer and defines the plasma region.

[0085] 1 is a perspective view of an upper electrode according to an embodiment, and FIG 2 is a cross-sectional view of one section of the upper electrode according to an embodiment.

[0086] 1 and 2, the upper electrode 220 according to the embodiment may have a circular plate shape. The upper electrode 220 according to the embodiment may have a shape in which the thickness gradually changes in the radial direction.

[0087] The upper electrode 220 includes a first upper surface 221 , a first lower surface 222 , and a first side surface 223 .

[0088] The first upper surface 221 and the first lower surface 222 face each other.

[0089] The first upper surface 221 may be located in a region where a gas flows in to form plasma. The first upper surface 221 may be entirely flat. The first upper surface 221 may be substantially free of steps or bends.

[0090] The first lower surface 222 may be located in the plasma region 114. The first lower surface 222 may include a curve. The first lower surface 222 may have a curve in a radial direction. A portion of the first lower surface 222 may be curved and a portion of the first lower surface 222 may be flat.

[0091] The first side surface 223 extends from the first upper surface 221 to the first lower surface 222. The first side surface 223 may be an outer circumferential surface of the upper electrode 220.

[0092] The upper electrode 220 includes a plurality of through holes 226. The through holes 226 extend from the first upper surface 221 to the first lower surface 222. Plasma can be injected from the first upper surface 221 to below the upper electrode 220 through the through holes 226.

[0093] The through-hole 226 may have a diameter of about 0.3 mm to about 1 mm.

[0094] A step may be formed on the first side surface 223. That is, a part of the first side surface 223 and another part of the first side surface 223 may be disposed on different planes. Accordingly, the upper electrode 220 may include a step portion 225 on the first side surface 223.

[0095] The step portion 225 may be connected to or coupled with other components used in the semiconductor device manufacturing equipment.

[0096] The first side surface 223 may be flat without any step. That is, the step portion may be omitted from the first side surface 223.

[0097] The upper electrode 220 may have a thickness at a specific radius from the center, i.e., the thickness from the first upper surface 221 to the first lower surface 222 may be determined by the radius in a horizontal direction flat from the center to the first upper surface 221.

[0098] A thickness direction from the first upper surface 221 to the first lower surface 222 may be perpendicular to the first upper surface 221. The upper electrode 220 may have an axisymmetric structure. That is, the upper electrode 220 may have an axisymmetric structure with respect to a center line (C) that passes perpendicularly through the center of the first upper surface 221. In this case, the thickness (T) from the first upper surface 221 to the first lower surface 222 may be a function (T(R)) of the radius (R). That is, the upper electrode 220 may have substantially the same thickness at the same radius.

[0099] Furthermore, the radius (R) is the distance in the horizontal and radial directions from the center of the first lower surface 222. The horizontal direction may be substantially parallel to the first upper surface 221. Furthermore, the horizontal direction may be substantially perpendicular to the thickness direction.

[0100] The thickness change rate may be a change in thickness due to a change in radius. The thickness change rate may be a value obtained by dividing the thickness change by the radius change. That is, the thickness change rate may be a value obtained by differentiating the thickness with respect to the radius.

[0101] The thickness change rate can be derived from the following Equation 1.

[0102] [Formula 1] dTR = (T11 - T12) / (R11 - R12)

[0103] Here, dTR is the thickness change rate, T1 is the thickness at the radius MR1, and T2 is the thickness at the radius MR2.

[0104] The thickness of the upper electrode 220 may be measured using a thickness gauge. The thickness of the upper electrode 220 may be measured from the first upper surface 221 to the first lower surface 222 in a direction perpendicular to the horizontal direction. The thickness from the first upper surface 221 to the first lower surface 222 may be measured at a plurality of measurement points. The thickness from the first upper surface 221 to the first lower surface 222 may be measured at a measurement interval of about 0.2 mm to about 0.4 mm. The interval between the measurement points may be selected from a range of about 0.2 mm to about 0.4 mm. The thickness from the first upper surface 221 to the first lower surface 222 may be measured at each measurement interval. The measurement interval may be a radius difference between adjacent measurement points.

[0105] In addition, the thickness change rate may be calculated for each measurement interval. That is, the thickness change rate may be calculated between adjacent measurement points. That is, in Equation 1, MR1-MR2 may be the measurement interval. MR1-MR2 may be 0.2 mm to about 0.4 mm. The measurement interval may be selected from the group consisting of about 0.2 mm, 0.25 mm, 0.3 mm, 0.35 mm, and 0.4 mm.

[0106] As shown in FIG. 2, the first lower surface 222 may include a first profile (P1), a second profile (P2), a third profile (P3), a fourth profile (P4), and a fifth profile (P5).

[0107] The first profile (P1) may be disposed in a central region of the first lower surface 222. The first profile (P1) may extend from the center of the first lower surface 222 to a first radius (R1). The first profile (P1) may have a circular shape when viewed from above. The first profile (P1) may correspond to the central region of the first lower surface 222.

[0108] The first radius (R1) may be one of approximately 7.5 mm to approximately 9.5 mm.The first radius (R1) may be one of approximately 8 mm to 9 mm.

[0109] The first profile (P1) may have a first thickness change rate, which may be an average value of thickness change rates measured in the first profile (P1).

[0110] The first thickness change rate may be about −0.1 to about 0. The first thickness change rate may be about −0.09 to about 0. The first thickness change rate may be about −0.085 to about 0.

[0111] The first thickness change rate may gradually decrease from the center (C) of the first lower surface 222 to the outer periphery. The first thickness change rate may approach 0 at the center (C) of the first lower surface 222 and gradually decrease toward the outer periphery.

[0112] Furthermore, in the first profile (P1), the first thickness change rate at the center (C) of the first lower surface 222 may be one of approximately -0.01 to approximately 0.01, and the first thickness change rate at the first radius (R1) may be one of approximately -0.09 to approximately -0.07.

[0113] The first thickness change rate may gradually decrease from one of about -0.01 to about 0.01 to one of about -0.09 to about -0.07 from the center (C) to the first radius (R1).

[0114] The second profile (P2) is disposed further outward than the first profile (P1). The second profile (P2) may surround the periphery of the first profile (P1). The second profile (P2) may extend along the periphery of the first profile (P1). The second profile (P2) may be in direct contact with the outer periphery of the first profile (P1). That is, the second profile (P2) and the first profile (P1) may be directly connected to each other.

[0115] The second profile (P2) may have an annular shape when viewed from above. The second profile (P2) may have a donut shape when viewed from above.

[0116] The second profile (P2) may be from the first radius (R1) to the second radius (R2). The second profile (P2) may be a region from the first radius (R1) to the second radius (R2). The second radius (R2) may be greater than the first radius (R1).

[0117] The second radius (R2) may be one of about 11 mm to about 14 mm. The second radius (R2) may be one of about 12 mm to about 13 mm. The second radius (R2) may be one of 12 mm to about 12.6 mm.

[0118] The second profile (P2) may have a second thickness change rate, which may be an average value of the thickness change rates in the second profile (P2).

[0119] The second thickness change rate may be about −0.12 to about −0.08. The second thickness change rate may be about −0.119 to about −0.083. The second thickness change rate may be about −0.10 to about −0.09.

[0120] The second thickness change rate in the second profile (P2) may gradually decrease toward the outer periphery, i.e., the second thickness change rate in the second profile (P2) may have a maximum value at the innermost portion and a minimum value at the outermost portion.

[0121] The second thickness change rate at the first radius (R1) may be one of about −0.07 to about −0.09, and the second thickness change rate at the second radius (R2) may be one of about −0.115 to about −0.122.

[0122] The second thickness change rate may gradually decrease from one of about −0.07 to −0.09 to one of about −0.115 to about −0.122 from the first radius (R1) to the second radius (R2).

[0123] The third profile (P3) is disposed outside the second profile (P2). The third profile (P3) may surround the first profile (P1) and the second profile (P2). That is, the third profile (P3) may extend along the periphery of the first profile (P1). The third profile (P3) may extend along the periphery of the second profile (P2). The third profile (P3) may be in direct contact with the outer periphery of the second profile (P2). That is, the third profile (P3) and the second profile (P2) may be directly connected to each other.

[0124] The third profile (P3) may be from the second radius (R2) to the third radius (R3). That is, the third profile (P3) may be a region from the second radius (R2) to the third radius (R3). The third radius (R3) may be greater than the second radius (R2).

[0125] The third radius (R3) may be one of approximately 54 mm to approximately 60 mm. The third radius (R3) may be one of approximately 55 mm to approximately 59 mm. The third radius (R3) may be one of approximately 56.5 mm to approximately 58.5 mm.

[0126] The third profile (P3) may have a third thickness change rate, which may be an average value of the thickness change rates in the third profile (P3).

[0127] The third thickness change rate may be about −0.115 to about −0.122. The third thickness change rate may be about −0.116 to about −0.121. The third thickness change rate may be about −0.117 to about −0.120.

[0128] The third thickness change rate in the third profile (P3) may be generally constant. That is, the third thickness change rate in the third profile (P3) may have a small deviation. The deviation of the third thickness change rate may be less than 0.006. The deviation of the third thickness change rate may be less than 0.005. The deviation of the third thickness change rate may be less than 0.004.

[0129] The third thickness change rate at the second radius (R2) may be one of about −0.115 to about −0.122. The third thickness change rate at the third radius (R3) may be one of about −0.115 to about −0.122.

[0130] The fourth profile (P4) is disposed outside the third profile (P3). The fourth profile (P4) may surround the first profile (P1), the second profile (P2), and the third profile (P3). That is, the fourth profile (P4) may extend along the periphery of the first profile (P1). The fourth profile (P4) may extend along the periphery of the second profile (P2). The fourth profile (P4) may extend along the periphery of the third profile (P3). The fourth profile (P4) may be in direct contact with the outer periphery of the third profile (P3). That is, the fourth profile (P4) and the third profile (P3) may be directly connected to each other.

[0131] The fourth profile (P4) may be from the third radius (R3) to the fourth radius (R4). That is, the fourth profile (P4) may be in the region from the third radius (R3) to the fourth radius (R4). The fourth radius (R4) may be greater than the third radius (R3).

[0132] The fourth radius (R4) may be one of approximately 86 mm to approximately 92 mm. The fourth radius (R4) may be one of approximately 87 mm to approximately 91 mm. The fourth radius (R4) may be one of approximately 87 mm to approximately 90 mm.

[0133] The fourth profile (P4) may have a fourth thickness change rate, which may be an average value of the thickness change rates in the fourth profile (P4).

[0134] The fourth thickness change rate may be about −0.121 to about 0. The fourth thickness change rate may be about −0.120 to about 0. The fourth thickness change rate may be about −0.120 to about 0.003. The fourth thickness change rate may be about −0.08 to about −0.03.

[0135] The fourth thickness change rate in the fourth profile P4 may gradually increase toward the outer periphery.

[0136] The fourth thickness change rate at the third radius (R3) may be one of about −0.115 to about −0.122. The fourth thickness change rate at the fourth radius (R4) may be one of about −0.01 to about 0.01.

[0137] The fourth thickness change rate may gradually increase from one of about −0.115 to −0.122 to one of about −0.01 to about 0.01 from the third radius (R3) to the fourth radius (R4).

[0138] The fifth profile (P5) is disposed outside the fourth profile (P4). The fifth profile (P5) may surround the first profile (P1), the second profile (P2), the third profile (P3), and the fourth profile (P4). That is, the fifth profile (P5) may extend along the periphery of the first profile (P1). The fifth profile (P5) may extend along the periphery of the second profile (P2). The fifth profile (P5) may extend along the periphery of the third profile (P3). The fifth profile (P5) may extend along the periphery of the fourth profile (P4). The fifth profile (P5) may be in direct contact with the outer periphery of the fourth profile (P4). That is, the fifth profile (P5) and the fourth profile (P4) may be directly connected to each other.

[0139] The fifth profile (P5) may be from the fourth radius (R4) to the fifth radius (R5). That is, the fifth profile (P5) may be a region from the fourth radius (R4) to the fifth radius (R5). The fifth radius (R5) may be greater than the fourth radius (R4). Also, the fifth radius (R5) may be an outer periphery of the upper electrode 220.

[0140] The fifth radius (R5) may be one of approximately 98 mm to approximately 105 mm. The fifth radius (R5) may be one of approximately 98 mm to approximately 102 mm. The fifth radius (R5) may be one of 98 mm to approximately 100 mm.

[0141] The fifth profile (P5) may have a fifth thickness change rate.

[0142] The fifth thickness change rate may be about −0.005 to about 0.005. The fifth thickness change rate may be about −0.003 to about 0.003. The fifth thickness change rate may be about −0.002 to about 0.002.

[0143] The fifth thickness change rate in the fifth profile (P5) may be generally constant. That is, the fifth thickness change rate in the fifth profile (P5) may have a small deviation. The deviation of the fifth thickness change rate may be less than 0.006. The deviation of the fifth thickness change rate may be less than 0.005. The deviation of the fifth thickness change rate may be less than 0.003.

[0144] The thickness at the center of the first lower surface 222 may be about 14 mm to about 20 mm. The thickness at the center of the first lower surface 222 may be about 15 mm to about 17 mm.

[0145] The thickness of the fifth profile (P5) may be about 6 mm to about 10 mm.The thickness of the fifth profile (P5) may be about 7 mm to about 9 mm.

[0146] Also, the overall radius of the upper electrode 220 may be substantially the same as the fifth radius (R5). The overall radius of the upper electrode 220 may be about 98 mm to about 106 mm.

[0147] Furthermore, a value obtained by dividing the first radius (R1) by the overall radius of the upper electrode 220 may be 0.075 to 0.095. A value obtained by dividing the second radius (R1) by the overall radius of the upper electrode 220 may be 0.11 to 0.14. A value obtained by dividing the third radius (R3) by the overall radius of the upper electrode 220 may be 0.48 to 0.54. A value obtained by dividing the fourth radius (R4) by the overall radius of the upper electrode 220 may be 0.88 to 0.92. A value obtained by dividing the fifth radius (R5) by the overall radius of the upper electrode 220 may be 0.97 to 1.

[0148] The deviation may be an absolute value of the difference between the thickness change rate and the average value for each position.

[0149] The upper electrode 220 may further include a fastening groove (not shown) for fastening to another component. In this case, the thickness of the upper electrode 220 may be measured without regard to the fastening groove. That is, the thickness of the upper electrode 220 may be measured assuming that the fastening groove is filled.

[0150] As described above, the upper electrode 220 according to the embodiment may have a thickness that varies depending on the radius, and accordingly, the first profile (P1), the second profile (P2), the third profile (P3), the fourth profile (P4), and the fifth profile (P5) may have thickness variation rates within the above ranges.

[0151] Therefore, the upper electrode 220 according to the embodiment may have a feature that the thickness decreases from the center to the periphery. That is, the lower surface of the upper electrode 220 according to the embodiment may have a downwardly convex and gradually thin profile at the center. Furthermore, the fifth profile (P5) may have an appropriate width and an overall flat shape.

[0152] Therefore, the upper electrode 220 according to the embodiment can prevent plasma from concentrating in the central portion and appropriately guide the plasma to the outer periphery.

[0153] As a result, the upper electrode 220 according to the embodiment can generate uniform plasma throughout.

[0154] The upper electrode 220 according to the embodiment can appropriately guide the plasma from the center to the periphery, that is, the upper electrode 220 according to the embodiment can uniformly form plasma throughout and provide the plasma with high linearity.

[0155] Therefore, the upper electrode 220 can be etched to a uniform thickness, that is, the semiconductor device manufacturing equipment including the upper electrode 220 can uniformly control the etching thickness of the semiconductor substrate.

[0156] Furthermore, the upper electrode 220 according to the embodiment can suppress the generation of residual process by-products, that is, the upper electrode 220 according to the embodiment can prevent the adsorption of the residual process by-products.

[0157] Therefore, the upper electrode 220 according to the embodiment can prevent defects such as scratches or chatter marks during the process of manufacturing a semiconductor device.

[0158] 3 and 4 are cross-sectional views showing a cross section of an upper electrode according to another embodiment, and an enlarged cross-sectional view of a cross section of an upper electrode according to another embodiment.

[0159] As shown in Figures 3 and 4, the first lower surface 222 may include a first profile (P1), a second profile (P2), a third profile (P3), a fourth profile (P4), a fifth profile (P5), a sixth profile (P6), and a seventh profile (P7).

[0160] The first profile (P1) may be disposed in a central region of the first lower surface 222. The first profile (P1) may extend from the center of the first lower surface 222 to a first radius (R1). The first profile (P1) may have a circular shape when viewed from above. The first profile (P1) may correspond to the central region of the first lower surface 222.

[0161] The first radius (R1) may be one of approximately 3 mm to approximately 5 mm. The first radius (R1) may be one of approximately 3.5 mm to 4.5 mm.

[0162] The first profile (P1) may have a first thickness change rate, which may be an average value of thickness change rates measured in the first profile (P1).

[0163] The first thickness change rate may be about −0.385 to about 0. The first thickness change rate may be about −0.30 to about −0.1. The first thickness change rate may be about −0.25 to about −0.15.

[0164] The first thickness change rate may gradually decrease from the center to the periphery of the first lower surface 222. The first thickness change rate may gradually decrease from the center to the periphery of the lower surface within a range of about -0.385 to about 0.

[0165] The first thickness change rate may be close to 0 at the center of the first lower surface 222 and gradually decrease toward the periphery. In the first profile (P1), the first thickness change rate at the center of the first lower surface 222 may be one of about -0.01 to about 0.01, and the first thickness change rate at the first radius (R1) may be one of about -0.36 to about -0.39.

[0166] The first thickness change rate may gradually decrease from one of about -0.01 to about 0.01 to one of about -0.36 to about -0.39 from the center toward the first radius (R1).

[0167] The second profile (P2) is disposed further outward than the first profile (P1). The second profile (P2) may surround the periphery of the first profile (P1). The second profile (P2) may extend along the periphery of the first profile (P1). The second profile (P2) may be in direct contact with the outer periphery of the first profile (P1). That is, the second profile (P2) and the first profile (P1) may be directly connected to each other.

[0168] The second profile (P2) may have an annular shape when viewed from above. The second profile (P2) may have a donut shape when viewed from above.

[0169] The second profile (P2) may be from the first radius (R1) to the second radius (R2). The second profile (P2) may be a region from the first radius (R1) to the second radius (R2). The second radius (R2) may be greater than the first radius (R1).

[0170] The second radius (R2) may be one of about 8 mm to about 10 mm.The second radius (R2) may be one of about 8.5 mm to about 9.5 mm.

[0171] The width of the second profile (P2) may be about 3 mm to about 7 mm.

[0172] The second profile (P2) may have a second thickness change rate, which may be an average value of the thickness change rates in the second profile (P2).

[0173] The second thickness change rate may be about −0.37 to about −0.39 The second thickness change rate may be about −0.375 to about −0.385.

[0174] The second thickness change rate in the second profile (P2) may be approximately constant, i.e., the second thickness change rate in the second profile (P2) may have substantially similar values ​​at the innermost and outermost portions.

[0175] The second thickness change rate at the first radius (R1) may be about −0.37 to about −0.39 The second thickness change rate at the second radius (R2) may be about −0.37 to about −0.39.

[0176] The third profile (P3) is disposed outside the second profile (P2). The third profile (P3) may surround the first profile (P1) and the second profile (P2). That is, the third profile (P3) may extend along the periphery of the first profile (P1). The third profile (P3) may extend along the periphery of the second profile (P2). The third profile (P3) may be in direct contact with the outer periphery of the second profile (P2). That is, the third profile (P3) and the second profile (P2) may be directly connected to each other.

[0177] The third profile (P3) may be from the second radius (R2) to the third radius (R3). That is, the third profile (P3) may be a region from the second radius (R2) to the third radius (R3). The third radius (R3) may be greater than the second radius (R2).

[0178] The third radius (R3) may be between about 75 mm and about 85 mm. The third radius (R3) may be between about 77 mm and about 83 mm. The third radius (R3) may be between 78 mm and about 82 mm.

[0179] The width of the third profile may be 65 mm to about 78 mm. The width of the third profile may be 67 mm to about 76 mm. The width of the third profile may be 68 mm to about 75 mm.

[0180] The third profile (P3) may have a third thickness change rate, which may be an average value of the thickness change rates in the third profile (P3).

[0181] The third thickness change rate may be about −0.385 to about 0. The third thickness change rate may be about −0.3 to about −0.1. The third thickness change rate may be about −0.25 to about −0.15.

[0182] The third thickness change rate in the third profile (P3) may gradually increase as the radius increases. That is, the third thickness change rate may gradually increase from the second radius (R2) to the third radius (R3). The third thickness change rate may gradually increase from the center of the lower surface to the outer periphery. The third thickness change rate may be within a range of about -0.385 to about 0, and may gradually increase from the center of the lower surface to the outer periphery.

[0183] The third thickness change rate at the second radius (R2) may be one of about −0.37 to about −0.38. The third thickness change rate at the third radius (R3) may be one of about −0.003 to about 0.003.

[0184] The third thickness change rate may gradually increase from about -0.37 to about -0.38 to about -0.003 to about 0.003 from the second radius (R2) to the third radius (R3).

[0185] The fourth profile (P4) is disposed outside the third profile (P3). The fourth profile (P4) may surround the first profile (P1), the second profile (P2), and the third profile (P3). That is, the fourth profile (P4) may extend along the periphery of the first profile (P1). The fourth profile (P4) may extend along the periphery of the second profile (P2). The fourth profile (P4) may extend along the periphery of the third profile (P3). The fourth profile (P4) may be in direct contact with the outer periphery of the third profile (P3). That is, the fourth profile (P4) and the third profile (P3) may be directly connected to each other.

[0186] The fourth profile (P4) may be from the third radius (R3) to the fourth radius (R4). That is, the fourth profile (P4) may be in the region from the third radius (R3) to the fourth radius (R4). The fourth radius (R4) may be greater than the third radius (R3).

[0187] The fourth radius (R4) may be between about 108 mm and about 114 mm. The fourth radius (R4) may be between about 109 mm and about 113 mm. The fourth radius (R4) may be between 110 mm and about 112 mm.

[0188] The fourth profile (P4) may have a fourth thickness change rate.

[0189] The fourth thickness change rate may be about 0 to about 0.105. The fourth thickness change rate may be about 0.02 to about 0.8. The fourth thickness change rate may be about 0.03 to about 0.07.

[0190] The fourth thickness change rate in the fourth profile (P4) may gradually increase as the radius increases. The fourth thickness change rate may gradually increase from the third radius (R3) to the fourth radius (R4). The fourth thickness change rate may be in a range of about 0 to about 0.105, and may gradually increase from the center of the lower surface to the outer periphery.

[0191] The fourth thickness change rate at the third radius (R3) may be one of about −0.003 to about 0.003. The fourth thickness change rate at the fourth radius (R4) may be one of about 0.1 to about 0.11.

[0192] That is, the fourth thickness change rate may gradually increase from one of about -0.003 to about 0.003 to one of about 0.1 to about 0.11 as it moves from the third radius (R3) to the fourth radius (R4).

[0193] The fifth profile (P5) is disposed outside the fourth profile (P4). The fifth profile (P5) may surround the first profile (P1), the second profile (P2), the third profile (P3), and the fourth profile (P4). That is, the fifth profile (P5) may extend along the periphery of the first profile (P1). The fifth profile (P5) may extend along the periphery of the second profile (P2). The fifth profile (P5) may extend along the periphery of the third profile (P3). The fifth profile (P5) may extend along the periphery of the fourth profile (P4). The fifth profile (P5) may be in direct contact with the outer periphery of the fourth profile (P4). That is, the fifth profile (P5) and the fourth profile (P4) may be directly connected to each other.

[0194] The fifth profile (P5) may be from the fourth radius (R4) to the fifth radius (R5). That is, the fifth profile (P5) may be in the region from the fourth radius (R4) to the fifth radius (R5). The fifth radius (R5) may be greater than the fourth radius (R4).

[0195] The fifth radius (R5) may be between about 137 mm and about 142 mm. The fifth radius (R5) may be between about 138 mm and about 141 mm. The fifth radius (R5) may be between 138.5 mm and about 140.5 mm.

[0196] The width of the fifth profile (P5) may be about 24 mm to about 33 mm. The width of the fifth profile (P5) may be about 26 mm to about 31 mm. The width of the fifth profile (P5) may be about 27 mm to about 30 mm.

[0197] The fifth profile (P5) may have a fifth thickness change rate, and the fourth thickness change rate may be an average value of the thickness change rates in the fifth profile (P5).

[0198] The fifth thickness change rate may be about 0.1 to about 0.11, and the fourth thickness change rate may be about 0.102 to about 0.108.

[0199] The fifth thickness change rate at the fourth radius (R4) may be about 0.1 to 0.11 The fifth thickness change rate at the fifth radius (R5) may be about 0.1 to about 0.11.

[0200] The fifth thickness change rate in the fifth profile (P5) may be generally constant. That is, the fifth thickness change rate in the fifth profile (P5) may have a small deviation. The deviation of the fifth thickness change rate may be less than 0.01. The deviation of the fifth thickness change rate may be less than 0.007. The deviation of the fifth thickness change rate may be less than 0.005.

[0201] The sixth profile (P6) is disposed further outward than the fifth profile (P5). The sixth profile (P6) may surround the periphery of the fifth profile (P5). The sixth profile (P6) may extend along the periphery of the fifth profile (P5). The sixth profile (P6) may be in direct contact with the outer periphery of the fifth profile (P5). That is, the sixth profile (P6) and the fifth profile (P5) may be directly connected to each other.

[0202] The sixth profile (P6) may have an annular shape when viewed from above. The sixth profile (P6) may have a donut shape when viewed from above.

[0203] The sixth profile (P6) may be from the fifth radius (R5) to the sixth radius (R6). The sixth profile (P6) may be in the region from the fifth radius (R5) to the sixth radius (R6). The sixth radius (R6) may be even larger than the fifth radius (R5).

[0204] The sixth radius (R6) may be one of approximately 140 mm to approximately 142 mm. The sixth radius (R6) may be one of approximately 140.5 mm to approximately 141.5 mm.

[0205] The width of the sixth profile (P6) may be about 1 mm to about 1.5 mm.

[0206] The sixth profile (P6) may have a sixth thickness change rate, which may be an average value of the thickness change rates in the sixth profile (P6).

[0207] The sixth thickness change rate may be about 0 to about 0.1. The sixth thickness change rate may be about 0.02 to about 0.08. The sixth thickness change rate may be about 0.03 to about 0.07.

[0208] The sixth thickness change rate in the sixth profile (P6) may gradually decrease from the fifth radius (R5) to the sixth radius (R6). The sixth thickness change rate in the sixth profile (P6) may gradually decrease within a range of 0 to 0.1 from the innermost to the outermost.

[0209] The sixth thickness change rate at the fifth radius (R5) may be one of about 0.1 to 0.11.The sixth thickness change rate at the sixth radius (R6) may be one of about -0.003 to about 0.003.

[0210] That is, the sixth thickness change rate may gradually decrease from one of about 0.1 to 0.11 to one of about −0.003 to about 0.003 from the fifth radius (R5) to the sixth radius (R6).

[0211] The seventh profile (P7) is disposed outside the sixth profile (P6). The seventh profile (P7) may surround the first profile (P1), the second profile (P2), the third profile (P3), the fourth profile (P4), and the fifth profile (P5). That is, the seventh profile (P7) may extend along the periphery of the first profile (P1). The seventh profile (P7) may extend along the periphery of the second profile (P2). The seventh profile (P7) may extend along the periphery of the third profile (P3). The seventh profile (P7) may extend along the periphery of the fourth profile (P4). The seventh profile (P7) may extend along the periphery of the fifth profile (P5). The seventh profile (P7) may extend along the periphery of the sixth profile (P6). The seventh profile (P7) may be in direct contact with the outer periphery of the sixth profile (P6), that is, the seventh profile (P7) and the seventh profile (P7) may be directly connected to each other.

[0212] The seventh profile (P7) may be from the sixth radius (R6) to the seventh radius (R7). That is, the seventh profile (P7) may be in the region from the sixth radius (R6) to the seventh radius (R7). The seventh radius (R7) may be even larger than the sixth radius (R6).

[0213] The seventh radius (R7) may be between about 144.5 mm and about 155 mm. The seventh radius (R7) may be between about 145 mm and about 152 mm.

[0214] The seventh profile (P7) may have a seventh thickness change rate.

[0215] The seventh thickness change rate may be about −0.005 to about 0.005. The seventh thickness change rate may be about −0.003 to about 0.003. The seventh thickness change rate may be about −0.002 to about 0.002.

[0216] The seventh thickness change rate in the seventh profile (P7) may be constant throughout the radius. The seventh thickness change rate may be constant throughout from the sixth radius (R6) to the seventh radius (R7). The deviation of the seventh thickness change rate in the seventh profile (P7) may be less than 0.005. The deviation of the seventh thickness change rate in the seventh profile (P7) may be less than 0.003. The deviation of the seventh thickness change rate in the seventh profile (P7) may be less than 0.002.

[0217] The seventh thickness change rate at the sixth radius (R6) may be about −0.003 to about 0.003 The seventh thickness change rate at the seventh radius (R7) may be about −0.003 to about 0.003.

[0218] The thickness at the center of the first lower surface 222 may be about 20 mm to about 28 mm. The thickness at the center of the first lower surface 222 may be about 22 mm to about 25 mm.

[0219] The thickness in the region where the third profile and the fourth profile (P4) intersect may be about 9 mm to about 12 mm. The thickness in the region where the third profile and the fourth profile (P4) intersect may be about 8 mm to about 13 mm.

[0220] The thickness of the seventh profile (P7) may be about 11 mm to about 16 mm. The thickness of the seventh profile (P7) may be about 10 mm to about 17 mm.

[0221] Also, the overall radius of the upper electrode 220 may be substantially the same as the seventh radius (R7). The overall radius of the upper electrode 220 may be about 144 mm to about 155 mm.

[0222] The deviation may be an absolute value of the difference between the thickness change rate and the average value for each position.

[0223] Furthermore, a value obtained by dividing the first radius (R1) by the overall radius of the upper electrode 220 may be 0.015 to 0.035. A value obtained by dividing the second radius (R1) by the overall radius of the upper electrode 220 may be 0.05 to 0.07. A value obtained by dividing the third radius (R3) by the overall radius of the upper electrode 220 may be 0.5 to 0.57. A value obtained by dividing the fourth radius (R4) by the overall radius of the upper electrode 220 may be 0.72 to 0.76. A value obtained by dividing the fifth radius (R5) by the overall radius of the upper electrode 220 may be 0.92 to 0.94. A value obtained by dividing the sixth radius (R6) by the overall radius of the upper electrode 220 may be 0.935 to 0.955.

[0224] In the first, second, and third profiles, the thickness may be gradually smaller from the center to the outer periphery, and in the fourth, fifth, and sixth profiles, the thickness may be gradually larger from the center to the outer periphery.

[0225] That is, the first thickness change rate, the second thickness change rate, and the third thickness change rate may be less than 0, and the fourth thickness change rate, the fifth thickness change rate, and the sixth thickness change rate may be greater than 0.

[0226] The sum of the widths of the first profile, the second profile, and the third profile may be about 75 mm to about 85 mm. The sum of the widths of the fourth profile, the fifth profile, and the sixth profile may be about 62 mm to about 67 mm. The sum of the widths of the first profile, the second profile, and the third profile may be even greater than the sum of the widths of the fourth profile, the fifth profile, and the sixth profile.

[0227] The ratio of the sum of the widths of the first profile, the second profile, and the third profile to the sum of the widths of the fourth profile, the fifth profile, and the sixth profile may be about 51:49 to about 59:41.

[0228] The upper electrode 220 may further include a fastening groove (not shown) for fastening to another component. In this case, the thickness of the upper electrode 220 may be measured without regard to the fastening groove. That is, the thickness of the upper electrode 220 may be measured assuming that the fastening groove is filled.

[0229] As described above, the upper electrode 220 according to the embodiment may have a thickness that varies depending on the radius, and accordingly, the first profile (P1), the second profile (P2), the third profile (P3), the fourth profile (P4), the fifth profile (P5), the sixth profile (P6), and the seventh profile (P7) may have thickness variation rates within the above ranges.

[0230] Therefore, the upper electrode 220 according to the embodiment may have a characteristic that the thickness gradually decreases and then increases from the center to the periphery. That is, the lower surface of the upper electrode 220 according to the embodiment may have a downwardly convex shape at the center, and may have a profile that gradually decreases and then increases in thickness. Furthermore, the seventh profile (P5) may have a suitable width and an overall flat shape.

[0231] Therefore, the upper electrode 220 according to the embodiment can appropriately guide the plasma to the outer periphery while collecting the plasma in the central portion.

[0232] As a result, the upper electrode 220 according to the embodiment can generate uniform plasma throughout.

[0233] The upper electrode 220 according to the embodiment can appropriately guide the plasma from the center to the outer periphery, that is, the upper electrode 220 according to the embodiment can uniformly generate plasma and provide the plasma with high linearity.

[0234] Therefore, the upper electrode 220 can be etched to a uniform thickness, that is, the semiconductor device manufacturing equipment including the upper electrode 220 can uniformly control the etching thickness of the semiconductor substrate.

[0235] Furthermore, the upper electrode 220 according to the embodiment can suppress the generation of residual process by-products, that is, the upper electrode 220 according to the embodiment can prevent the adsorption of the residual process by-products.

[0236] Therefore, the upper electrode 220 according to the embodiment can prevent defects such as scratches or chatter marks during the process of manufacturing a semiconductor device.

[0237] Figure 5 is a cross-sectional view showing a cross section of an upper electrode according to still another embodiment, and Figure 6 is an enlarged cross-sectional view showing a cross section of an upper electrode according to still another embodiment.

[0238] As shown in Figures 5 and 6, the first lower surface 222 may include a first profile (P1), a second profile (P2), a third profile (P3), a fourth profile (P4), a fifth profile (P5), a sixth profile (P6), a seventh profile (P7), and an eighth profile (P8).

[0239] The first profile (P1) may be disposed in a central region of the first lower surface 222. The first profile (P1) may extend from the center of the first lower surface 222 to a first radius (R1). The first profile (P1) may have a circular shape when viewed from above. The first profile (P1) may correspond to the central region of the first lower surface 222.

[0240] The first radius (R1) may be one of approximately 3 mm to approximately 5 mm. The first radius (R1) may be one of approximately 3.5 mm to 4.5 mm.

[0241] The first profile (P1) may have a first thickness change rate, which may be an average value of thickness change rates measured in the first profile (P1).

[0242] The first thickness change rate may be about -0.25 to about 0. The first thickness change rate may be about -0.20 to about 0. The first thickness change rate may be about -0.15 to about 0.

[0243] The first thickness change rate may gradually decrease from the center to the periphery of the first lower surface 222. The first thickness change rate may approach 0 at the center of the first lower surface 222 and gradually decrease toward the periphery.

[0244] Furthermore, in the first profile (P1), the first thickness change rate at the center of the first lower surface 222 may be one of approximately -0.01 to approximately 0.01, and the first thickness change rate at the first radius (R1) may be one of approximately -0.25 to approximately -0.23.

[0245] That is, the first thickness change rate may gradually decrease from one of about -0.01 to about 0.01 to one of about -0.25 to about -0.23 from the center toward the first radius (R1).

[0246] The second profile (P2) is disposed further outward than the first profile (P1). The second profile (P2) may surround the periphery of the first profile (P1). The second profile (P2) may extend along the periphery of the first profile (P1). The second profile (P2) may be in direct contact with the outer periphery of the first profile (P1). That is, the second profile (P2) and the first profile (P1) may be directly connected to each other.

[0247] The second profile (P2) may have an annular shape when viewed from above. The second profile (P2) may have a donut shape when viewed from above.

[0248] The second profile (P2) may be from the first radius (R1) to the second radius (R2). The second profile (P2) may be a region from the first radius (R1) to the second radius (R2). The second radius (R2) may be greater than the first radius (R1).

[0249] The second radius (R2) may be one of approximately 16 mm to approximately 19 mm. The second radius (R2) may be one of approximately 17 mm to approximately 18.5 mm. The second radius (R2) may be one of 17 mm to approximately 18 mm.

[0250] The width of the second profile (P2) may be about 12 mm to about 16 mm.

[0251] The second profile (P2) may have a second thickness change rate, which may be an average value of the thickness change rates in the second profile (P2).

[0252] The second thickness change rate may be about −0.26 to about −0.23. The second thickness change rate may be about −0.25 to about −0.24. The second thickness change rate may be about −0.248 to about −0.242.

[0253] The second thickness change rate in the second profile (P2) may be approximately constant, i.e., the second thickness change rate in the second profile (P2) may have substantially similar values ​​at the innermost and outermost portions.

[0254] The second thickness change rate at the first radius (R1) may be one of about −0.26 to about −0.22. The second thickness change rate at the second radius (R2) may be one of about −0.26 to about −0.22.

[0255] The third profile (P3) is disposed outside the second profile (P2). The third profile (P3) may surround the first profile (P1) and the second profile (P2). That is, the third profile (P3) may extend along the periphery of the first profile (P1). The third profile (P3) may extend along the periphery of the second profile (P2). The third profile (P3) may be in direct contact with the outer periphery of the second profile (P2). That is, the third profile (P3) and the second profile (P2) may be directly connected to each other.

[0256] The third profile (P3) may be from the second radius (R2) to the third radius (R3). That is, the third profile (P3) may be a region from the second radius (R2) to the third radius (R3). The third radius (R3) may be greater than the second radius (R2).

[0257] The third radius (R3) may be between about 69 mm and about 71 mm. The third radius (R3) may be between about 68 mm and about 72 mm. The third radius (R3) may be between 69.5 mm and about 70.7 mm.

[0258] The third profile (P3) may have a third thickness change rate, which may be an average value of the thickness change rates in the third profile (P3).

[0259] The third thickness change rate may be about −0.2 to about −0.05. The third thickness change rate may be about −0.16 to about −0.08. The third thickness change rate may be about −0.15 to about −0.1.

[0260] The third thickness change rate in the third profile (P3) may gradually increase as the radius increases, i.e., the third thickness change rate may gradually become larger from the second radius (R2) to the third radius (R3).

[0261] The third thickness change rate at the second radius (R2) may be one of about -0.26 to about -0.22. The third thickness change rate at the third radius (R3) may be one of about -0.006 to about 0.

[0262] The third thickness change rate may gradually increase from one of about -0.26 to about -0.22 to one of about -0.006 to about 0 from the second radius (R2) to the third radius (R3).

[0263] The fourth profile (P4) is disposed outside the third profile (P3). The fourth profile (P4) may surround the first profile (P1), the second profile (P2), and the third profile (P3). That is, the fourth profile (P4) may extend along the periphery of the first profile (P1). The fourth profile (P4) may extend along the periphery of the second profile (P2). The fourth profile (P4) may extend along the periphery of the third profile (P3). The fourth profile (P4) may be in direct contact with the outer periphery of the third profile (P3). That is, the fourth profile (P4) and the third profile (P3) may be directly connected to each other.

[0264] The fourth profile (P4) may be from the third radius (R3) to the fourth radius (R4). That is, the fourth profile (P4) may be in the region from the third radius (R3) to the fourth radius (R4). The fourth radius (R4) may be greater than the third radius (R3).

[0265] The fourth radius (R4) may be between about 74 mm and about 76 mm. The fourth radius (R4) may be between about 74.3 mm and about 75.5 mm. The fourth radius (R4) may be between 74.5 mm and about 75.3 mm.

[0266] The fourth profile (P4) may have a fourth thickness change rate, which may be an average value of the thickness change rates in the fourth profile (P4).

[0267] The fourth thickness change rate may be about −0.003 to about 0.003 The fourth thickness change rate may be about −0.002 to about 0.002.

[0268] The fourth thickness change rate at the third radius (R3) may be one of approximately −0.003 to 0. The fourth thickness change rate at the fourth radius (R4) may be one of approximately −0.003 to approximately 0.003.

[0269] The fourth thickness change rate in the fourth profile (P4) may be generally constant. That is, the fourth thickness change rate in the fourth profile (P4) may have a small deviation. The deviation of the fourth thickness change rate may be less than 0.006. The deviation of the fourth thickness change rate may be less than 0.005. The deviation of the fourth thickness change rate may be less than 0.003.

[0270] The fifth profile (P5) is disposed outside the fourth profile (P4). The fifth profile (P5) may surround the first profile (P1), the second profile (P2), the third profile (P3), and the fourth profile (P4). That is, the fifth profile (P5) may extend along the periphery of the first profile (P1). The fifth profile (P5) may extend along the periphery of the second profile (P2). The fifth profile (P5) may extend along the periphery of the third profile (P3). The fifth profile (P5) may extend along the periphery of the fourth profile (P4). The fifth profile (P5) may be in direct contact with the outer periphery of the fourth profile (P4). That is, the fifth profile (P5) and the fourth profile (P4) may be directly connected to each other.

[0271] The fifth profile (P5) may be from the fourth radius (R4) to the fifth radius (R5). That is, the fifth profile (P5) may be in the region from the fourth radius (R4) to the fifth radius (R5). The fifth radius (R5) may be greater than the fourth radius (R4).

[0272] The fifth radius (R5) may be between about 106 mm and about 108 mm. The fifth radius (R5) may be between about 106.5 mm and about 107.7 mm. The fifth radius (R5) may be between 106.8 mm and about 107.5 mm.

[0273] The fifth profile (P5) may have a fifth thickness change rate.

[0274] The fifth thickness change rate may be about 0 to about 0.12. The fifth thickness change rate may be about 0.03 to about 0.1. The fifth thickness change rate may be about 0.04 to about 0.08.

[0275] The fifth thickness change rate in the fifth profile (P5) may gradually increase as the radius increases, and the fifth thickness change rate may gradually increase from the fourth radius (R4) to the fifth radius (R5).

[0276] The fifth thickness change rate at the fourth radius (R4) may be one of about −0.003 to about 0.003. The fifth thickness change rate at the fifth radius (R5) may be one of about 0.125 to about 0.132.

[0277] The fifth thickness change rate may gradually increase from about -0.003 to about 0.003 to about 0.125 to about 0.132 from the fourth radius (R4) to the fifth radius (R5).

[0278] The sixth profile (P6) is disposed further outward than the fifth profile (P5). The sixth profile (P6) may surround the periphery of the fifth profile (P5). The sixth profile (P6) may extend along the periphery of the fifth profile (P5). The sixth profile (P6) may be in direct contact with the outer periphery of the fifth profile (P5). That is, the sixth profile (P6) and the fifth profile (P5) may be directly connected to each other.

[0279] The sixth profile (P6) may have an annular shape when viewed from above. The sixth profile (P6) may have a donut shape when viewed from above.

[0280] The sixth profile (P6) may be from the fifth radius (R5) to the sixth radius (R6). The sixth profile (P6) may be in the region from the fifth radius (R5) to the sixth radius (R6). The sixth radius (R6) may be even larger than the fifth radius (R5).

[0281] The sixth radius (R6) may be one of approximately 138 mm to approximately 139.5 mm. The sixth radius (R6) may be one of approximately 138.5 mm to approximately 139.5 mm.

[0282] The width of the sixth profile (P6) may be about 30 mm to about 33.5 mm.

[0283] The sixth profile (P6) may have a sixth thickness change rate, which may be an average value of the thickness change rates in the sixth profile (P6).

[0284] The sixth thickness change rate may be about 0.13 to about 0.142. The sixth thickness change rate may be about 0.13 to about 0.14. The sixth thickness change rate may be about 0.132 to about 0.14. The sixth thickness change rate may be about 0.133 to about 0.139.

[0285] The sixth thickness change rate in the sixth profile (P6) may be approximately constant, i.e., the sixth thickness change rate in the sixth profile (P6) may have substantially similar values ​​at the innermost and outermost portions.

[0286] The sixth thickness change rate at the fifth radius (R5) may be one of about 0.13 to 0.135. The sixth thickness change rate at the sixth radius (R6) may be one of about 0.132 to about 0.138.

[0287] The seventh profile (P7) is disposed outside the sixth profile (P6). The seventh profile (P7) may surround the first profile (P1), the second profile (P2), the third profile (P3), the fourth profile (P4), and the fifth profile (P5). That is, the seventh profile (P7) may extend along the periphery of the first profile (P1). The seventh profile (P7) may extend along the periphery of the second profile (P2). The seventh profile (P7) may extend along the periphery of the third profile (P3). The seventh profile (P7) may extend along the periphery of the fourth profile (P4). The seventh profile (P7) may extend along the periphery of the fifth profile (P5). The seventh profile (P7) may extend along the periphery of the sixth profile (P6). The seventh profile (P7) may be in direct contact with the outer periphery of the sixth profile (P6), that is, the seventh profile (P7) and the seventh profile (P7) may be directly connected to each other.

[0288] The seventh profile (P7) may be from the sixth radius (R6) to the seventh radius (R7). That is, the seventh profile (P7) may be in the region from the sixth radius (R6) to the seventh radius (R7). The seventh radius (R7) may be even larger than the sixth radius (R6).

[0289] The seventh radius (R7) may be between about 141 mm and about 142.5 mm. The seventh radius (R7) may be between about 141 mm and about 142 mm.

[0290] The seventh profile (P7) may have a seventh thickness change rate.

[0291] The seventh thickness change rate may be about 0 to about 0.13. The seventh thickness change rate may be about 0.03 to about 0.1. The seventh thickness change rate may be about 0.04 to about 0.08.

[0292] The seventh thickness change rate in the seventh profile (P7) may gradually decrease as the radius increases, and may gradually decrease from the sixth radius (R6) to the seventh radius (R7).

[0293] The seventh thickness change rate at the sixth radius (R6) may be one of about 0.132 to about 0.138. The seventh thickness change rate at the seventh radius (R7) may be one of about -0.003 to about 0.003.

[0294] The seventh thickness change rate may decrease from one of about 0.132 to about 0.138 to one of about −0.003 to about 0.003 as it moves from the sixth radius (R6) to the seventh radius (R7).

[0295] The eighth profile (P8) is disposed outside the seventh profile (P7). The eighth profile (P8) may surround the first profile (P1), the second profile (P2), the third profile (P3), the fourth profile (P4), the fifth profile (P5), the sixth profile (P6), and the seventh profile (P7). That is, the eighth profile (P8) may extend along the periphery of the first profile (P1). The eighth profile (P8) may extend along the periphery of the second profile (P2). The eighth profile (P8) may extend along the periphery of the third profile (P3). The eighth profile (P8) may extend along the periphery of the fourth profile (P4). The eighth profile (P8) may extend along the periphery of the fifth profile (P5). The eighth profile (P8) may extend along the periphery of the sixth profile (P6). The eighth profile (P8) may extend along the periphery of the seventh profile (P7). The eighth profile (P8) may be in direct contact with the outer periphery of the seventh profile (P7). That is, the eighth profile (P8) and the seventh profile (P7) may be directly connected to each other.

[0296] The eighth profile (P8) may be from the seventh radius (R7) to the eighth radius (R8). That is, the eighth profile (P8) may be in the region from the seventh radius (R7) to the eighth radius (R8). The eighth radius (R8) may be greater than the seventh radius (R7). The eighth radius (R8) may correspond to the outermost periphery of the upper electrode 220.

[0297] The eighth radius (R8) may be between about 144.5 mm and about 150 mm. The eighth radius (R8) may be between about 145 mm and about 148 mm.

[0298] The eighth profile (P8) may have an eighth thickness change rate.

[0299] The eighth thickness change rate may be about −0.005 to about 0.005. The eighth thickness change rate may be about −0.003 to about 0.003. The eighth thickness change rate may be about −0.002 to about 0.002.

[0300] The eighth thickness change rate in the eighth profile (P8) may be constant throughout the radius. The eighth thickness change rate may be constant throughout from the seventh radius (R7) to the eighth radius (R8). The deviation of the eighth thickness change rate in the eighth profile (P8) may be less than 0.005. The deviation of the eighth thickness change rate in the eighth profile (P8) may be less than 0.003. The deviation of the eighth thickness change rate in the eighth profile (P8) may be less than 0.002.

[0301] The eighth thickness change rate at the seventh radius (R7) may be one of about −0.003 to about 0.003. The eighth thickness change rate at the eighth radius (R8) may be one of about −0.003 to about 0.003.

[0302] The thickness at the center of the first lower surface 222 may be about 15 mm to about 25 mm. The thickness at the center of the first lower surface 222 may be about 16 mm to about 22 mm.

[0303] The thickness of the fourth profile (P4) may be about 6 mm to about 14 mm. The thickness of the fourth profile (P4) may be about 7 mm to about 13 mm.

[0304] The thickness of the eighth profile (P8) may be about 6 mm to about 14 mm. The thickness of the eighth profile (P8) may be about 10 mm to about 20 mm.

[0305] Also, the overall radius of the upper electrode 220 may be substantially the same as the eighth radius (R8). The overall radius of the upper electrode 220 may be about 144.5 mm to about 150 mm.

[0306] The deviation may be an absolute value of the difference between the thickness change rate and the average value for each position.

[0307] Furthermore, a value obtained by dividing the first radius (R1) by the overall radius of the upper electrode 220 may be 0.015 to 0.035. A value obtained by dividing the second radius (R1) by the overall radius of the upper electrode 220 may be 0.10 to 0.13. A value obtained by dividing the third radius (R3) by the overall radius of the upper electrode 220 may be 0.45 to 0.51. A value obtained by dividing the fourth radius (R4) by the overall radius of the upper electrode 220 may be 0.49 to 0.53. A value obtained by dividing the fifth radius (R5) by the overall radius of the upper electrode 220 may be 0.70 to 0.76. A value obtained by dividing the sixth radius (R6) by the overall radius of the upper electrode 220 may be 0.94 to 0.96. A value obtained by dividing the seventh radius (R7) by the overall radius of the upper electrode 220 may be 0.97 to 0.98.

[0308] The upper electrode 220 may further include a fastening groove (not shown) for fastening to another component. In this case, the thickness of the upper electrode 220 may be measured without regard to the fastening groove. That is, the thickness of the upper electrode 220 may be measured assuming that the fastening groove is filled.

[0309] As described above, the upper electrode 220 according to the embodiment may have a thickness that varies depending on the radius. Accordingly, the first profile (P1), the second profile (P2), the third profile (P3), the fourth profile (P4), the fifth profile (P5), the sixth profile (P6), the seventh profile (P7), and the eighth profile (P8) may have thickness variation rates within the above ranges.

[0310] Therefore, the upper electrode 220 according to the embodiment may have a characteristic that the thickness gradually decreases and then increases from the center to the periphery. That is, the lower surface of the upper electrode 220 according to the embodiment may have a downwardly convex shape at the center and a profile that gradually decreases and then increases in thickness. Furthermore, the fourth profile (P4) and the eighth profile (P5) may have an appropriate width and an overall flat shape.

[0311] Therefore, the upper electrode 220 according to the embodiment can appropriately guide the plasma to the outer periphery while collecting the plasma in the central portion.

[0312] As a result, the upper electrode 220 according to the embodiment can generate uniform plasma throughout.

[0313] The upper electrode 220 according to the embodiment can appropriately guide the plasma from the center to the outer periphery, that is, the upper electrode 220 according to the embodiment can uniformly generate plasma and provide the plasma with high linearity.

[0314] Therefore, the upper electrode 220 can be etched to a uniform thickness, that is, the semiconductor device manufacturing equipment including the upper electrode 220 can uniformly control the etching thickness of the semiconductor substrate.

[0315] Furthermore, the upper electrode 220 according to the embodiment can suppress the generation of residual process by-products, that is, the upper electrode 220 according to the embodiment can prevent the adsorption of the residual process by-products.

[0316] Therefore, the upper electrode 220 according to the embodiment can prevent defects such as scratches or chatter marks during the process of manufacturing a semiconductor device.

[0317] The focus ring 230 according to the embodiment may be a component used in a manufacturing apparatus for manufacturing semiconductor devices, i.e., the focus ring 230 may be a component constituting a part of the manufacturing apparatus for manufacturing semiconductor devices.

[0318] The focus ring 230 may be a component used in a plasma processing apparatus for manufacturing semiconductor devices. The focus ring 230 may be a component used in a plasma etching apparatus for selectively etching a semiconductor substrate 30. The semiconductor substrate 30 may include a semiconductor wafer that is plasma processed to manufacture a semiconductor device.

[0319] The focus ring 230 may be a component constituting a part of a lower electrode assembly for guiding plasma and supporting the semiconductor substrate 30. The focus ring 230 may be an edge ring disposed at the edge of the lower electrode assembly.

[0320] The focus ring 230 may also be a component that forms part of an assembly that contains the semiconductor substrate 30 and defines the plasma region 114 .

[0321] Fig. 7 is a perspective view showing focus ring 230. Fig. 8 is a cross-sectional view showing one section of focus ring 230.

[0322] 7 and 8, the focus ring 230 according to the embodiment may have an overall ring shape.

[0323] The focus ring 230 includes a body portion 237, an inclined portion 238, and a guide portion 239. The body portion 237 may extend along the periphery of the semiconductor substrate 30. The body portion 237 may be disposed along the periphery of the semiconductor substrate 30. The body portion 237 may have a ring shape.

[0324] The inclined portion 238 extends from the body portion 237. The inclined portion 238 may extend inward from the body portion 237. The inclined portion 238 may extend from the body portion 237 toward the center of the semiconductor substrate 30. The inclined portion 238 may have a ring shape. That is, the inclined portion 238 may be disposed on the inner circumferential surface of the body portion 237.

[0325] The guide portion 239 extends from the inclined portion 238. The guide portion 239 may extend inward from the inclined portion 238. The guide portion 239 may extend from the inclined portion 238 toward the center of the semiconductor substrate 30. The guide portion 239 may have a ring shape. At least a portion of the guide portion 239 may be disposed below the semiconductor substrate 30.

[0326] The body portion 237, the inclined portion 238, and the guide portion 239 may be integrally formed. That is, the body portion 237, the inclined portion 238, and the guide portion 239 may have an integrated structure rather than a combined structure. The body portion 237, the inclined portion 238, and the guide portion 239 may be integrally formed of single crystal silicon.

[0327] The focus ring 230 includes a second upper surface 231 , a second lower surface 232 , and a second side surface 233 .

[0328] The second upper surface 231 and the second lower surface 232 face each other.

[0329] The second upper surface 231 may be included in the body portion 237 .

[0330] The second lower surface 232 may be generally flat.

[0331] The second side surface 233 extends from the second upper surface 231 to the second lower surface 232. The second side surface 233 may be an outer circumferential surface of the focus ring 230.

[0332] The focus ring 230 also includes a second inclined surface 234. The second inclined surface 234 may extend laterally downward from the second upper surface 231. The second inclined surface 234 may guide by-products generated from the semiconductor substrate 30 after the plasma process to the side. That is, the second inclined surface 234 may guide process by-products generated by the plasma sprayed onto the semiconductor substrate 30 to the outside, thereby improving the efficiency of the semiconductor device manufacturing process. Furthermore, since the second inclined surface 234 appropriately guides the by-products, the focus ring 230 may prevent other components from being contaminated by the plasma.

[0333] Furthermore, the focus ring 230 may further include a guide surface 235. The guide surface 235 extends from the second inclined surface 234. The guide surface 235 may extend inward from the second inclined surface 234. The guide surface 235 may extend below the semiconductor substrate 30. The guide surface 235 may extend from the second inclined surface 234 to the center of the semiconductor substrate 30. At least a portion of the guide surface 235 may be disposed below the semiconductor substrate 30.

[0334] Furthermore, focus ring 230 may further include a third side surface 241. Third side surface 241 may extend from guide surface 235 to second lower surface 232. Third side surface 241 may be an inner circumferential surface of focus ring 230.

[0335] The focus ring 230 may further include a fastening groove (not shown) for fastening to other components.

[0336] The focus ring 230 includes a silicon single crystal. The focus ring 230 may contain the silicon single crystal as a main component. The focus ring 230 may contain the silicon single crystal at a content of about 90 wt% or more. The focus ring 230 may contain the silicon single crystal at a content of about 95 wt% or more. The focus ring 230 may contain the silicon single crystal at a content of about 99 wt% or more. The focus ring 230 may consist essentially of the silicon single crystal.

[0337] The upper electrode 220 and the focus ring 230 according to the embodiment may be manufactured by the following process.

[0338] First, raw materials for manufacturing the upper electrode 220 and the focus ring 230 are prepared.

[0339] The raw material may be silicon. The silicon may have a high purity. The silicon may have a purity of greater than about 99.999999%.

[0340] The source material may include a dopant, which may be an n-type dopant such as nitrogen or phosphorus, or a p-type dopant such as boron or aluminum.

[0341] The silicon single crystal ingot can be formed by the Czochralski (CZ) method, which involves immersing a single crystal seed crystal in molten silicon and slowly pulling it up to grow the crystal.

[0342] The silicon single crystal ingot can be sliced ​​to a thickness of about 3 mm to about 25 mm. The slicing step can be performed using a wire saw. The wire saw may include a wire and diamond particles bonded to the periphery of the wire.

[0343] Thus, a silicon single crystal plate is manufactured by the slicing process.

[0344] The silicon single crystal plate then undergoes a chamfering process, i.e., the corners of the silicon single crystal plate are ground, thereby forming a first chamfered surface extending from the upper surface of the silicon single crystal plate and inclined relative to the first upper surface 221, and a second chamfered surface extending from the lower surface of the silicon single crystal plate and inclined relative to the first lower surface 222.

[0345] The chamfering step can be performed with a hand grinder.

[0346] The silicon single crystal plate may be subjected to a grinding process.

[0347] The silicon single crystal plate is disposed between an upper platen and a lower platen, and the silicon single crystal plate moves relative to the upper platen and the lower platen, so that the silicon single crystal plate can be ground.

[0348] The outer peripheral surface of the silicon single crystal plate can be machined by a second grinder.

[0349] The silicon single crystal plate that has undergone the outer peripheral surface processing step can be shaped by a third grinder.

[0350] The third grinder may form the approximate outline of the focus ring 230 and / or the upper electrode 220. The third grinder may cut to form an open region in the center. The third grinder may also form the approximate outlines of the first profile (P1), the second profile (P2), the third profile (P3), the fourth profile (P4), and the fifth profile (P5).

[0351] The rotation speed of the third grinder head may be about 1500 rpm to about 8000 rpm. The rotation speed of the third grinder head may be about 1700 rpm to about 7500 rpm. The rotation speed of the third grinder head may be about 1000 rpm to about 6500 rpm.

[0352] The third grinder head may have a mesh size of about 100 to about 2000. The third grinder head may have a mesh size of about 500 to about 2000. The third grinder head may have a mesh size of about 1000 to about 2000.

[0353] In the shaping step, the feed may be about 1 mm / min to about 15 mm / min. In the shaping step, the feed may be about 2 mm / min to about 10 mm / min. In the shaping step, the feed may be about 3 mm / min to about 8 mm / min.

[0354] The shaping process can form the first lower surface 222. Also, the shaping process can form fastening grooves for fastening to other components. In particular, the shaping process can form the general outlines of the first profile (P1), the second profile (P2), the third profile (P3), and the fourth profile (P4) on the first lower surface 222, as shown in FIG.

[0355] Furthermore, by the shaping process, as shown in Figures 3 and 4, the general outlines of the first profile (P1), the second profile (P2), the third profile (P3), the fourth profile (P4), the fifth profile (P5), the sixth profile (P6), and the seventh profile (P7) can be formed on the first lower surface 222.

[0356] Furthermore, as shown in Figures 5 and 6, the shape processing can form the general outlines of the first profile (P1), the second profile (P2), the third profile (P3), the fourth profile (P4), the fifth profile (P5), the sixth profile (P6), the seventh profile (P7), and the eighth profile (P8) on the first lower surface 222.

[0357] A through hole 226 may be formed in the silicon single crystal plate.

[0358] The through holes 226 can be formed by a drill.

[0359] The through holes 226 can be formed by electrical discharge machining.

[0360] The shape processing step and / or the step of forming the through-hole 226 can form an unprocessed focus ring and / or an unprocessed upper electrode 220.

[0361] The unprocessed focus ring and / or the unprocessed upper electrode 220 may undergo a lapping process.

[0362] The unmachined focus ring and / or the unmachined upper electrode 220 are disposed between an upper platen and a lower platen, and the unmachined focus ring and / or the unmachined upper electrode 220 move relative to the upper platen and the lower platen, thereby lapping the unmachined focus ring and / or the unmachined upper electrode 220.

[0363] The unprocessed focus ring and / or the unprocessed upper electrode 220 can rotate relatively to the upper surface plate and / or the lower surface plate at a speed of about 5 rpm to about 25 rpm.

[0364] In the lapping step, the upper surface plate and the lower surface plate may have a mesh size of approximately 800 mesh to approximately 1800 mesh.

[0365] In the lapping step, the pressure applied to the upper and lower platens may be about 60 psi to about 200 psi.

[0366] The unprocessed focus ring and the unprocessed upper electrode 220 may be surface-processed by a wet etching process.

[0367] For the wet etching process, an etchant may etch the surfaces of the unprocessed focus ring and the unprocessed upper electrode 220. The etchant may include deionized water and an acid. The etchant may include an acid such as sulfuric acid or an anionic acid. The etchant may include at least one of salts consisting of ammonium bifluoride, ammonium sulfate, and ammonium sulfamate.

[0368] The etching solution may contain deionized water in an amount of about 20 wt % to about 50 wt % based on the total weight.

[0369] The etching solution may contain the acid in an amount of about 70 parts by weight to about 200 parts by weight based on 100 parts by weight of the deionized water, or about 90 parts by weight to about 150 parts by weight of the acid based on 100 parts by weight of the deionized water.

[0370] The etching solution may contain the ammonium bifluoride in an amount of about 15 parts by weight to about 45 parts by weight based on 100 parts by weight of the deionized water, and the etching solution may contain the ammonium bifluoride in an amount of about 17 parts by weight to about 30 parts by weight based on 100 parts by weight of the deionized water.

[0371] The etching solution may contain about 15 parts by weight to about 45 parts by weight of ammonium sulfate based on 100 parts by weight of the deionized water, and about 17 parts by weight to about 30 parts by weight of ammonium sulfate based on 100 parts by weight of the deionized water.

[0372] The etching solution may contain the ammonium sulfamate in an amount of about 5 parts by weight to about 20 parts by weight based on 100 parts by weight of the deionized water.The etching solution may contain the ammonium sulfamate in an amount of about 5 parts by weight to about 15 parts by weight based on 100 parts by weight of the deionized water.

[0373] The etching process can be performed by immersing the unprocessed focus ring and / or the unprocessed upper electrode 220 in the etching solution. The immersion time may be about 10 minutes to about 100 minutes, about 5 minutes to about 20 minutes, or about 10 minutes to about 30 minutes.

[0374] The etching process includes the etching solution having the above composition and the immersion time within the above range, so that the surfaces of the unprocessed focus ring and the unprocessed upper electrode 220 can be appropriately etched, thereby allowing the focus ring 230 according to the embodiment and the upper electrode 220 according to the embodiment to have appropriate surface characteristics.

[0375] The raw focus ring and / or the raw upper electrode 220 may be surface treated by a polishing process.

[0376] A polishing pad can be used in the polishing step. The Shore C hardness of the polishing pad may be about 50 to about 90. The polishing pad may be a suede type or a nonwoven fabric type pad.

[0377] In the polishing step, a polishing slurry may be used, which may contain deionized water and colloidal silica.

[0378] The polishing slurry may contain the colloidal silica in an amount of about 20 wt% to about 50 wt% based on the total weight of the polishing slurry, and may contain the colloidal silica in an amount of about 30 wt% to about 45 wt% based on the total weight of the polishing slurry.

[0379] The colloidal silica may have an average particle size of about 20 nm to about 100 nm, about 50 nm to about 100 nm, or about 60 nm to about 85 nm.

[0380] The pH of the polishing slurry may be about 8.5 to about 11. The pH of the polishing slurry may be about 9.0 to about 10.5.

[0381] In the polishing step, the polishing pressure may be about 200 psi to about 350 psi.

[0382] In the polishing step, the rotation speed of the platen may be about 6 rpm to about 15 rpm.

[0383] The polishing process may take about 60 minutes to about 75 minutes.

[0384] The focus ring and upper electrode 220 that have undergone the polishing process are cleaned with a cleaning solution.

[0385] The cleaning solution may include deionized water, hydrogen peroxide, and ammonia.

[0386] The cleaning solution may contain deionized water in an amount of about 90 wt % to about 97 wt % based on the total weight.

[0387] The cleaning solution may contain the hydrogen peroxide in an amount of about 1 part by weight to about 10 parts by weight based on 100 parts by weight of the deionized water, or about 1 part by weight to about 7 parts by weight based on 100 parts by weight of the deionized water.

[0388] The cleaning solution may contain ammonia in an amount of about 1 part by weight to about 8 parts by weight based on 100 parts by weight of the deionized water, or about 1 part by weight to about 5 parts by weight based on 100 parts by weight of the deionized water.

[0389] The focus ring 230 and the upper electrode 220 are immersed in the cleaning solution for about 20 minutes to about 30 minutes.

[0390] In addition, a cleaning process may be performed by spraying the cleaning solution onto the focus ring 230 and / or the upper electrode 220.

[0391] In addition, the cleaning liquid can be sprayed into the inside of the through-hole 226 to clean the inside of the through-hole 226.

[0392] Thereafter, the focus ring 230 and / or the upper electrode 220 may be final rinsed with deionized water.

[0393] As described above, the upper electrode 220 can be manufactured by an appropriate shape processing step, an appropriate etching step, an appropriate polishing step, and an appropriate lapping step, whereby the upper electrode 220 may include a lower surface having the desired first to fifth profiles (P5).

[0394] In particular, the deviation of the third thickness change rate and the deviation of the fifth thickness change rate can be reduced by the appropriate manufacturing process as described above.

[0395] As a result, the components for a semiconductor device manufacturing apparatus according to the embodiment can improve plasma uniformity and minimize defects occurring during the manufacturing process of a semiconductor substrate 30.

[0396] 9 is a diagram showing a semiconductor device manufacturing apparatus according to an embodiment, and FIG. 10 is a cross-sectional view showing an assembly 20 for defining a plasma region 114.

[0397] 9 and 10, an apparatus for manufacturing a semiconductor device according to an embodiment includes a plasma reactor 102 having a plasma processing chamber 104 therein. The apparatus for manufacturing a semiconductor device according to an embodiment may further include an assembly 20 that defines a plasma region 114 disposed in the plasma processing chamber 104. The plasma processing chamber 104 may be substantially identical to the assembly 20 that defines the plasma region 114.

[0398] The semiconductor device manufacturing apparatus according to the embodiment also includes a matching network 108. The semiconductor device manufacturing apparatus according to the embodiment also includes a plasma power supply 106 tuned by the matching network 108. The plasma power supply 106 provides inductively coupled power to the plasma reactor 102. This allows plasma to be generated within the assembly 20 that defines the plasma region 114. More specifically, the plasma power supply 106 supplies power to a TCP coil 110 positioned near a power window 112 to generate the plasma. The TCP coil 110 may be configured to generate the plasma with a uniform diffusion profile within the assembly 20 that defines the plasma region 114. For example, the TCP coil 110 may be configured to generate a toroidal power distribution within the assembly that defines the plasma.

[0399] The power window 112 can separate the TCP coil from the plasma processing chamber 104 at a predetermined distance. Also, the TCP coil 110 can supply the energy to the plasma processing chamber 104 while being separated from the plasma processing chamber 104.

[0400] The semiconductor device manufacturing apparatus according to the embodiment may further include a bias voltage power supply 116 tuned by the matching network 118 .

[0401] The bias voltage power supply 116 may set a bias voltage on the semiconductor substrate 30 through the electrostatic chuck 270. That is, the bias voltage power supply 116 may supply power for setting a bias voltage on the semiconductor substrate 30.

[0402] The semiconductor device manufacturing apparatus according to the embodiment may further include a control unit 124. The control unit 124 may drive and control the plasma power supply unit 106, the gas source supply unit 130, and the bias voltage power supply unit 116.

[0403] The plasma power supply 106 and the bias voltage power supply 116 may also be configured to operate at a particular radio frequency, such as, for example, approximately 13.56 MHz, 27 MHz, 2 MHz, 60 MHz, 400 kHz, 2.54 GHz, or a combination thereof.

[0404] The plasma power supply 106 and the bias voltage power supply 116 can adjust the intensity of the power supplied to achieve a target process performance. For example, the plasma power supply 106 can supply power in the range of about 50 W to about 5000 W. The bias voltage power supply 116 can supply a bias voltage in the range of about 20 V to about 2000 V.

[0405] Furthermore, the semiconductor device manufacturing apparatus according to the embodiment may further include the gas source supply unit 130. The gas source supply unit 130 may be fluidly connected to the assembly 20 that defines the plasma region 114 by a gas inlet, such as a gas injector 140.

[0406] Additionally, the semiconductor device manufacturing apparatus according to the embodiment may include a pressure control valve 142 and a pump 144 that serve to maintain a specific pressure within the plasma processing chamber 104. The pressure control valve 142 and the pump remove by-products from the chamber 104 that define the plasma process. The pressure control valve 142 can maintain a process pressure of less than 1 Torr during processing.

[0407] As shown in FIG. 10, the assembly 20 defining the plasma region 114 includes a cover portion 210, the upper electrode 220, the focus ring 230, a first insulating ring 250, a second insulating ring 240, a third insulating ring 260, and the electrostatic chuck 270.

[0408] The cover portion 210 is disposed on the outer side of the plasma region 114. The cover portion 210 may extend along the outer side of the plasma region 114. The cover portion 210 may be disposed along the periphery of the plasma region 114.

[0409] The cover part 210 may support the upper electrode 220. The cover part 210 may be fastened to the upper electrode 220. The cover part 210 may be fastened to the second insulating ring 240. The cover part 210 may be fastened to the third insulating ring 260. The cover part 210 may support the third insulating ring 260.

[0410] The cover portion 210 may include silicon. The cover portion 210 may be made of silicon. The cover portion 210 may include polysilicon or single crystal silicon. The cover portion 210 may be made of polysilicon.

[0411] The cover 210 may include an exhaust 280 for exhausting process by-products generated in the plasma region 114. The exhaust 280 may be connected to the plasma region 114.

[0412] The upper electrode 220 and the focus ring 230 may have the features described above.

[0413] The upper electrode 220 may be seated on the cover portion 210. The upper electrode 220 may be fastened to the cover portion 210. The upper electrode 220 may be coupled to the cover portion 210.

[0414] The upper electrode 220 is disposed on the plasma region 114. The upper electrode 220 may entirely cover the upper surface of the plasma region 114. The upper electrode 220 may face the semiconductor substrate 30 with the plasma region 114 interposed therebetween.

[0415] The focus ring 230 may extend along the periphery of the semiconductor substrate 30. The focus ring 230 may be disposed on the electrostatic chuck 270. The focus ring 230 may extend along the periphery of the plasma region 114. The focus ring 230 may be disposed inside the first insulating ring 250.

[0416] The focus ring 230 may surround the portion where the semiconductor substrate 30 is disposed. The focus ring 230 may form a space 236 where the semiconductor substrate 30 is disposed. The focus ring 230 may be disposed at an edge portion of the semiconductor substrate 30.

[0417] The first insulating ring 250 surrounds the periphery of the focus ring 230. The first insulating ring 250 may surround the periphery of the electrostatic chuck 270. The first insulating ring 250 may extend along the outer circumferential surface of the electrostatic chuck 270. The first insulating ring 250 may extend along the outer circumferential surface of the focus ring 230. The first insulating ring 250 may cover the outer circumferential surfaces of the focus ring 230 and the electrostatic chuck 270.

[0418] The first insulating ring 250 is disposed between the cover portion 210 and the focus ring 230. The first insulating ring 250 may also be disposed between the cover portion 210 and the electrostatic chuck 270.

[0419] Furthermore, the first insulating ring 250 may have high electrical resistance. That is, the first insulating ring 250 may have high insulating properties. As a result, the first insulating ring 250 can insulate the focus ring 230 from the cover portion 210. Furthermore, the first insulating ring 250 can insulate the electrostatic chuck 270 from the cover portion 210.

[0420] The first insulating ring 250 may include a material having high electrical resistivity and high etching resistance. The first insulating ring 250 may include quartz. The first insulating ring 250 may include fused silica and / or synthetic silica.

[0421] The first insulating ring 250 may be made of quartz. The first insulating ring 250 may be made of quartz having a purity of about 99.99% or higher.

[0422] The second insulating ring 240 is disposed outside the first insulating ring 250. The second insulating ring 240 may surround the outer circumferential surface of the first insulating ring 250. The second insulating ring 240 may extend along the periphery of the first insulating ring 250.

[0423] The second insulating ring 240 may reinforce the insulating properties of the first insulating ring 250. The second insulating ring 240 may provide insulation between the focus ring 230 and the cover portion 210. In addition, the second insulating ring 240 may provide insulation between the electrostatic chuck 270 and the cover portion 210.

[0424] The second insulating ring 240 may include a material having high electrical resistivity and high etching resistance. The second insulating ring 240 may include quartz. The second insulating ring 240 may include fused silica and / or synthetic silica.

[0425] The second insulating ring 240 may be made of quartz. The second insulating ring 240 may be made of quartz having a purity of about 99.99% or higher.

[0426] The third insulating ring 260 may be disposed below the cover portion 210. The third insulating ring 260 may be disposed below the cover portion 210. The third insulating ring 260 may be disposed outside the first insulating ring 250. The third insulating ring 260 may extend along the outer circumferential surface of the first insulating ring 250. The third insulating ring 260 may be disposed outside the electrostatic chuck 270.

[0427] The third insulating ring 260 may be disposed around the exhaust portion 280. The exhaust portion 280 may be an exhaust port for exhausting process by-products generated in the plasma region 114.

[0428] The third insulating ring 260 may include a material having high electrical resistivity and high etching resistance. The third insulating ring 260 may include quartz. The third insulating ring 260 may include fused silica and / or synthetic quartz.

[0429] The third insulating ring 260 may be made of quartz. The third insulating ring 260 may be made of quartz having a purity of about 99.99% or higher.

[0430] The semiconductor device manufacturing apparatus according to the embodiment can plasma process the semiconductor substrate 30. The semiconductor device manufacturing apparatus according to the embodiment can plasma process the semiconductor substrate 30 to manufacture a semiconductor device.

[0431] The semiconductor substrate 30 may include a wafer, a layer to be etched disposed on the wafer, and a mask pattern disposed on the layer to be etched.

[0432] The layer to be etched may be a conductive layer including a metal layer, or a dielectric layer including an oxide film.

[0433] The mask pattern can selectively expose the layer to be etched. The mask pattern may include a photoresist layer. The photoresist layer can be patterned by light.

[0434] In order to perform plasma processing on the semiconductor substrate 30, the semiconductor substrate 30 is placed on the electrostatic chuck 270. The semiconductor substrate 30 may also be placed inside the focus ring 230. The semiconductor substrate 30 may also be placed on the guide portion 239.

[0435] Then, plasma is injected onto the semiconductor substrate 30. The plasma is injected onto the semiconductor substrate 30 through the upper electrode 220. The plasma may be generated by a gas source.

[0436] The gas source may include hydrogen gas (H), nitrogen gas (N), and a fluorine-based gas, such as hydrogen fluoride or carbon fluoride (CH). x F 4-x , x may contain a constant of 1 to 3).

[0437] The flow ratio of the hydrogen gas to the nitrogen gas may be about 3:1 to about 7:1, and the flow ratio of the hydrogen gas to the fluorine-based gas may be about 10:1 to about 100:1.

[0438] The plasma can selectively etch the target layer, thereby forming a conductive or insulating pattern on the wafer.

[0439] Since the focus ring 230 and the upper electrode 220 have the above-described characteristics, the semiconductor device manufacturing apparatus according to the embodiment can prevent defects from occurring during the manufacturing process of the semiconductor substrate 30.

[0440] In particular, the upper electrode 220 has the above-described characteristics, which can improve the linearity of plasma, thereby improving the etching uniformity of the semiconductor device manufacturing apparatus according to the embodiment.

[0441] As a result, the parts for semiconductor device manufacturing equipment according to the embodiment can prevent external and internal contamination and prevent the transfer of the contaminants into the chamber of the semiconductor device manufacturing equipment, thereby minimizing defects occurring during the semiconductor substrate manufacturing process.

[0442] In addition, the surface of the semiconductor device manufacturing equipment component according to the embodiment includes a suitable dopant peak, which allows the semiconductor device manufacturing equipment component according to the embodiment to have suitable electrical properties and minimize defects caused by the dopant.

[0443] In addition, the component for a semiconductor device manufacturing apparatus according to the embodiment has a surface with a low body-centered cubic ratio and a low rhombohedral ratio, which may reduce the frequency of crystal defects on the surface of the component for a semiconductor device manufacturing apparatus according to the embodiment.

[0444] Therefore, the semiconductor device manufacturing equipment parts according to the embodiments can prevent excessive wear caused by the crystal defects during the process of manufacturing a semiconductor substrate. As a result, the semiconductor device manufacturing equipment parts according to the embodiments can suppress particle generation within a process chamber due to the excessive wear. As a result, the semiconductor device manufacturing equipment parts according to the embodiments can prevent defects generated during the semiconductor substrate manufacturing process. Furthermore, because the excessive wear is suppressed, the semiconductor device manufacturing equipment parts according to the embodiments can have improved durability.

[0445] 2, the upper electrode according to the embodiment may have a thickness that varies with radius, such that the lower surface of the upper electrode according to the embodiment includes a first profile having a first thickness change rate, a third profile having a third thickness change rate, and a fifth profile having a fifth thickness change rate.

[0446] In particular, the first thickness change rate may be about −0.1 to about 0, the third thickness change rate may be about −0.115 to about −0.122, and the fifth thickness change rate may be about −0.003 to about 0.003.

[0447] Therefore, the upper electrode according to the embodiment may have a feature that the thickness decreases from the center to the periphery, i.e., the lower surface of the upper electrode according to the embodiment may have a downwardly convex and gradually thin profile at the center.

[0448] As a result, the upper electrode according to the embodiment can reinforce the plasma in the central portion and improve the linearity of the plasma.

[0449] As a result, the upper electrode according to the embodiment can generate a uniform plasma overall.

[0450] In particular, as the diameter of the upper electrode increases, the plasma density may decrease toward the center of the upper electrode, and since the upper electrode has a profile with the above-described thickness change rate, a uniform plasma may be generated overall.

[0451] Furthermore, the upper electrode according to the embodiment can suppress the generation of residual process by-products, that is, the upper electrode according to the embodiment can prevent the adsorption of the residual process by-products.

[0452] Therefore, the upper electrode according to the embodiment can prevent defects such as scratches or chatter marks during the process of manufacturing a semiconductor device.

[0453] 3 and 4, the upper electrode according to the embodiment may have a thickness that varies with radius, such that the lower surface of the upper electrode according to the embodiment includes a first profile having a first thickness change rate, a second profile having a second thickness change rate, a third profile having a third thickness change rate, a fourth profile having a fourth thickness change rate, a fifth profile having a fifth thickness change rate, and a seventh profile having a seventh thickness change rate.

[0454] The first thickness change rate is within a range of -0.385 to 0 and gradually decreases from the center of the lower surface to the outer periphery, the second thickness change rate is -0.37 to -0.39, the third profile is within a range of -0.385 to 0 and gradually increases from the center of the lower surface to the outer periphery, the fourth thickness change rate is within a range of 0 to 0.105 and gradually increases from the center of the lower surface to the outer periphery, the fifth thickness change rate is 0.1 to 0.11, and the seventh thickness change rate is -0.003 to 0.003.

[0455] Therefore, the upper electrode according to the embodiment may have a feature that the thickness gradually decreases from the center to the periphery and then increases. That is, the lower surface of the upper electrode according to the embodiment may have a downwardly convex profile at the center, and may have a profile that gradually decreases and then increases. Furthermore, the upper electrode according to the embodiment may have a feature that the thickness changes suddenly near the center.

[0456] Therefore, the upper electrode according to the embodiment reinforces the plasma in the central and outer portions, thereby improving the linearity of the plasma.

[0457] As a result, the upper electrode according to the embodiment can generate a uniform plasma overall.

[0458] In particular, as the diameter of the upper electrode increases, the plasma density at the center and outer periphery of the upper electrode may decrease. In this case, since the upper electrode has a profile with the above-described thickness change rate, a uniform plasma may be realized overall.

[0459] Furthermore, the upper electrode according to the embodiment may implement a uniform plasma overall, thereby suppressing the generation of residual process by-products, i.e., preventing the adsorption of the residual process by-products.

[0460] Therefore, the upper electrode according to the embodiment can prevent defects such as scratches or chatter marks during the process of manufacturing a semiconductor device.

[0461] Furthermore, the upper electrode according to the embodiment can suppress the phenomenon of plasma concentration at a specific portion during the process of manufacturing the semiconductor device, thereby preventing etching of a specific portion.

[0462] As a result, the upper electrode according to the embodiment can suppress excessive wear caused by plasma in the plasma generation region, and thus the semiconductor device manufacturing apparatus including the upper electrode according to the embodiment can have improved durability.

[0463] 5 and 6, the upper electrode 220 may have a thickness that varies with radius, as described above, such that the lower surface of the upper electrode 220 includes a first profile having a first thickness change rate, a second profile having a second thickness change rate, a fourth profile having a fourth thickness change rate, a sixth profile having a sixth thickness change rate, and an eighth profile having an eighth thickness change rate.

[0464] As described above, the first profile may have a first thickness change rate of -0.25 to 0, the second profile may have a second thickness change rate of -0.25 to -0.24, the fourth profile may have a fourth thickness change rate of -0.003 to 0.003, the sixth profile may have a sixth thickness change rate of -0.14 to -0.16, and the eighth profile may have an eighth thickness change rate of -0.003 to 0.003.

[0465] Accordingly, the upper electrode 220 may have a characteristic that its thickness gradually decreases and then increases from the center to the periphery, i.e., the lower surface of the upper electrode 220 may have a downwardly convex shape at the center and a profile that gradually decreases and then increases in thickness.

[0466] Therefore, the upper electrode 220 reinforces the plasma in the central and outer portions, thereby improving the linearity of the plasma.

[0467] Therefore, the upper electrode 220 can generate uniform plasma throughout.

[0468] In particular, as the diameter of the upper electrode 220 increases, the plasma density may decrease at the center and outer periphery of the upper electrode 220. In this case, since the upper electrode 220 has a profile with the above-described thickness change rate, it may be possible to realize a uniform plasma overall.

[0469] In addition, the upper electrode 220 can suppress the generation of residual process by-products by realizing a uniform plasma throughout the entire surface, i.e., the upper electrode 220 can prevent the adsorption of the residual process by-products.

[0470] Therefore, the upper electrode 220 can prevent defects such as scratches or chatter marks during the process of manufacturing a semiconductor device.

[0471] Furthermore, the upper electrode 220 suppresses plasma concentration at a specific portion during the process of manufacturing the semiconductor device, thereby preventing etching of a specific portion.

[0472] As a result, the upper electrode 220 can be prevented from excessive wear due to plasma in the plasma generation region, and thus the semiconductor device manufacturing equipment including the upper electrode 220 can have improved durability. That is, the upper electrode 220 can improve the durability of components included in the semiconductor device manufacturing equipment.

[0473] As a result, the semiconductor device manufacturing apparatus according to the embodiment may provide a semiconductor manufacturing process with improved etching uniformity, i.e., the semiconductor substrate manufactured by the semiconductor device manufacturing apparatus according to the embodiment may have an overall uniform etching thickness as the radius increases.

[0474] Furthermore, the upper electrode 220 may be omitted from the semiconductor device manufacturing apparatus according to the embodiment. That is, in a semiconductor device manufacturing apparatus in which the focus ring 230 is omitted, the upper electrode 220 may be separately attached later. In the semiconductor device manufacturing apparatus according to the embodiment, the upper electrode 220 may be omitted and then attached later. That is, the semiconductor device manufacturing apparatus according to the embodiment may be optimized and configured so that the upper electrode 220 can be attached.

[0475] Furthermore, the features, structures, effects, etc. described in the above embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. exemplified in each embodiment can be combined or modified in other embodiments by a person skilled in the art to which the embodiment belongs. Therefore, the contents related to these combinations and modifications should be interpreted as being included in the scope of the present invention.

[0476] The above description has focused on the embodiments, but these are merely illustrative and do not limit the present invention. Those skilled in the art will recognize that various modifications and applications not exemplified above are possible within the scope of the essential characteristics of the present invention. For example, each component specifically illustrated in the embodiments can be modified and implemented. Differences regarding these modifications and applications should be construed as being included within the scope of the present invention as defined in the appended claims.

[0477] Manufacturing Example 1 A silicon ingot with a diameter of approximately 330 mm was produced by the Czochralski method. The silicon ingot was cut with a diamond wire saw to produce a silicon single crystal plate with a thickness of approximately 20 mm. The corners of the silicon single crystal plate were then cut to form chamfered surfaces.

[0478] The silicon single crystal plate that has undergone the chamfering process is then placed between an upper platen and a lower platen and lapped by the upper platen and the lower platen. The lapped silicon single crystal plate is then shaped by a grinder, thereby forming an unprocessed upper electrode.

[0479] The shaping process was carried out under the following conditions. 1) Grinder head: 800 mesh 2) Grinder rotation speed: 6000 rpm 3) Feed: 0.7 mm / min

[0480] Thereafter, the raw upper electrode was immersed in an etching solution at room temperature for about 7 minutes to process the outer surface of the raw upper electrode, thereby producing an upper electrode.

[0481] The components of the etching solution are as follows: 1) Deionized water: 35% / wt weight part 2) Sulfuric acid: 60% / wt parts by weight 3) Ammonium nitrate: 5% / wt part by weight

[0482] The lower surface of the upper electrode included a first profile (radius 0 to 8.5 mm), a second profile (radius 8.5 mm to 12.3 mm), a third profile (radius 12.3 mm to 57.4 mm), a fourth profile (radius 57.4 mm to 88.4 mm), and a fifth profile (radius 88.4 mm to 100 mm). The thickness of the upper electrode at its center was approximately 17.1 mm, and the thickness of the upper electrode at its outermost periphery was approximately 9.3 mm.

[0483] The thickness change rate at the center of the first profile was 0, and the thickness change rate at a radius of 8 mm was −0.081. Furthermore, the thickness change rate at the center of the first profile continued to decrease up to a radius of 8 mm.

[0484] The thickness change rate at a radius of 12.5 mm was approximately -0.115. The thickness change rate in the second profile continued to decrease.

[0485] The thickness change rate at a radius of 58 mm was approximately -0.115. The thickness change rate in the third profile was constant. The deviation of the thickness change rate in the third profile was less than 0.003.

[0486] Furthermore, the thickness change rate at a radius of 88 mm was approximately 0. The thickness change rate in the fourth profile continued to increase.

[0487] The thickness change rate at a radius of 100 mm was approximately 0. The thickness change rate in the fifth profile was constant. The deviation of the thickness change rate in the fifth profile was less than 0.003.

[0488] Manufacturing Examples 2 to 6 The shapes of the first profile, second profile, third profile, fourth profile, and fifth profile were changed as shown in the following Table 1. The upper electrode in Production Example 6 was in the shape of a flat plate with a thickness of 14 mm.

[0489] [Table 1]

[0490] [Table 2]

[0491] Manufacturing Example 7 A silicon ingot with a diameter of approximately 330 mm was produced by the Czochralski method. The silicon ingot was cut with a diamond wire saw to produce a silicon single crystal plate with a thickness of approximately 20 mm. The corners of the silicon single crystal plate were then cut to form chamfered surfaces.

[0492] The silicon single crystal plate that has undergone the chamfering process is then placed between an upper platen and a lower platen and lapped by the upper platen and the lower platen. The lapped silicon single crystal plate is then shaped by a grinder, thereby forming an unprocessed upper electrode.

[0493] The shaping process was carried out under the following conditions. 1) Grinder head: 1000 mesh 2) Grinder rotation speed: 6000 rpm 3) Feed: 0.7 mm / min

[0494] Thereafter, the unprocessed upper electrode was immersed in the following etching solution at room temperature for about 6500 seconds to process the outer surface of the unprocessed upper electrode, thereby producing an upper electrode.

[0495] The components of the etching solution are as follows: 1) Deionized water: 35% / wt weight part 2) Sulfuric acid: 60% / wt parts by weight 3) Ammonium nitrate: 5% / wt part by weight

[0496] The lower surface of the upper electrode included a first profile (radius from 0 to 4 mm), a second profile (radius from 4 to 9 mm), a third profile (radius from 9 to 79 mm), a fourth profile (radius from 79 to 111 mm), a fifth profile (radius from 111 to 139 mm), a sixth profile (radius from 139 to 141 mm), and a seventh profile (radius from 141 to 150 mm). The thickness of the upper electrode at the center was approximately 25 mm, the thickness at the intersection of the third and fourth profiles was 10.3 mm, and the thickness at the eighth profile was approximately 14 mm.

[0497] The thickness change rate at the center of the first profile was 0, and the thickness change rate at a radius of 4 mm was −0.38. The thickness change rate from the center of the first profile to a radius of 4 mm continuously decreased.

[0498] The thickness change rate at a radius of 9 mm was approximately -0.378. The thickness change rate in the second profile was almost unchanged within a deviation of approximately 0.01.

[0499] Furthermore, the thickness change rate at a radius of 79 mm was approximately 0. The thickness change rate in the third profile continued to increase.

[0500] The thickness change rate at a radius of 111 mm was approximately 0.101. The thickness change rate in the fourth profile continued to increase.

[0501] The thickness change rate at a radius of 139 mm was approximately 0.103. The thickness change rate in the fifth profile was almost unchanged within a deviation of approximately 0.01.

[0502] Furthermore, the thickness change rate at a radius of 141 mm was approximately 0. The thickness change rate in the sixth profile decreased rapidly.

[0503] Furthermore, the thickness change rate at a radius of 150 mm was approximately 0. The thickness change rate in the seventh profile was constant. The thickness change rate in the seventh profile was approximately 0. The deviation of the thickness change rate in the seventh profile was less than 0.003.

[0504] Manufacturing Examples 8 to 12 The shapes of the first, second, third, fourth, fifth, sixth, seventh, and eighth profiles are changed as shown in the following Tables 3 and 4. The upper electrode in Manufacturing Example 12 has a flat plate shape with a thickness of 15 mm.

[0505] [Table 3]

[0506] [Table 4]

[0507] Manufacturing Example 13 A silicon ingot with a diameter of approximately 330 mm was produced by the Czochralski method. The silicon ingot was cut with a diamond wire saw to produce a silicon single crystal plate with a thickness of approximately 20 mm. The corners of the silicon single crystal plate were then cut to form chamfered surfaces.

[0508] The silicon single crystal plate that has been subjected to the chamfering process is then placed between an upper platen and a lower platen and lapped by the upper platen and the lower platen. The lapped silicon single crystal plate is then shaped by a grinder, thereby forming an unprocessed upper electrode.

[0509] The shaping process was carried out under the following conditions. 1) Grinder head: 1000 mesh 2) Grinder rotation speed: 7000 rpm 3) Feed: 0.6 mm / min

[0510] Thereafter, the unprocessed upper electrode was immersed in an etching solution at room temperature for approximately 63,000 seconds to process the outer surface of the unprocessed upper electrode, thereby fabricating an upper electrode.

[0511] The components of the etching solution are as follows: 1) Deionized water: 34.5% / wt weight part 2) Sulfuric acid: 50% / wt parts by weight 3) Ammonium hydrogen fluoride: 5% / wt weight part 4) Ammonium sulfate: 7% / wt part by weight 5) Ammonium nitrate: 3.5% / wt part by weight

[0512] The lower surface of the upper electrode included a first profile (radius from 0 to 3.5 mm), a second profile (radius from 3.5 mm to 17 mm), a third profile (radius from 17 mm to 70 mm), a fourth profile (radius from 70 mm to 75 mm), a fifth profile (radius from 75 mm to 108 mm), a sixth profile (radius from 108 mm to 138 mm), a seventh profile (radius from 138 mm to 142 mm), and an eighth profile (radius from 142 mm to 145 mm). The thickness of the upper electrode at the center was about 20 mm, the thickness of the fourth profile was 10 mm, and the thickness of the eighth profile was about 15 mm.

[0513] The thickness change rate at the center of the first profile was 0, and the thickness change rate at a radius of 3.5 mm was −0.245. The thickness change rate from the center of the first profile to a radius of 3.5 mm continuously decreased.

[0514] The thickness change rate at a radius of 17 mm was approximately -0.241. The thickness change rate in the second profile was almost unchanged within a deviation of approximately 0.01.

[0515] Furthermore, the thickness change rate at a radius of 70 mm was approximately 0. The thickness change rate in the third profile continued to increase.

[0516] Furthermore, the thickness change rate at a radius of 75 mm was approximately 0. The thickness change rates in the four profiles were constant. The thickness change rate in the fourth profile was approximately 0. The deviation of the thickness change rate in the fourth profile was less than 0.003.

[0517] The thickness change rate at a radius of 108 mm was about 0.13. The thickness change rate in the fifth profile continued to increase.

[0518] The thickness change rate at a radius of 138 mm was approximately 0.13. The thickness change rate in the sixth profile was almost unchanged within a deviation of approximately 0.01.

[0519] Furthermore, the thickness change rate at a radius of 142 mm was approximately 0. The thickness change rate in the seventh profile continued to decrease.

[0520] Furthermore, the thickness change rate at a radius of 145 mm was approximately 0. The thickness change rate in the eighth profile was constant. The thickness change rate in the eighth profile was approximately 0. The deviation of the thickness change rate in the eighth profile was less than 0.003.

[0521] Manufacturing Examples 14 to 17 As shown in Tables 5 and 6 below, the shapes of the first profile, second profile, third profile, fourth profile, fifth profile, sixth profile, seventh profile, and eighth profile have been changed.

[0522] [Table 5]

[0523] [Table 6]

[0524] Examples 1 to 15 and Comparative Examples 1 and 2 As shown in Table 7 below, an upper electrode was attached to a wafer etching apparatus, and a silicon wafer was placed in the etching apparatus. Hydrogen gas, nitrogen gas, and CHF were then injected onto the upper electrode at a flow ratio of about 5:1:0.5 to generate plasma, which was then injected onto the silicon wafer for about 10 minutes to perform an etching process.

[0525] [Table 7]

[0526] Evaluation example 1. Thickness change rate The thickness of the upper electrode was measured in the radial direction at a measurement interval of 0.3 mm using a contact-type three-dimensional measuring machine (manufacturer: MITUTOYO, product name: CRYSTA-APEC C9166). As a result, the thickness change rate of the lower surface of the upper electrode was calculated as shown in Tables 1 and 2.

[0527] 2. Etching deviation The etched silicon wafer was measured for a first etching thickness at the center and a second etching thickness at the periphery. The deviation between the first etching thickness and the second etching thickness was determined. The deviation between the first etching thickness and the second etching thickness was calculated by dividing the difference between the first etching thickness and the second etching thickness by the first etching thickness.

[0528] The deviation between the first etching thickness and the second etching thickness is less than 0.1: Good The deviation between the first etching thickness and the second etching thickness is 0.1 or more: defective

[0529] 3. Defect Assessment The number of defects on the etched silicon wafer was measured using a wafer surface analyzer (WM-3000, Zeus).

[0530] Number of defects 10 or less: Good, O 11 or more defects: defective, ×

[0531] As shown in Table 8 below, Examples 1 to 4 had low numbers of defects and low residue contents.

[0532] [Table 8]

[0533] As shown in Table 8 above, the method for manufacturing a semiconductor device according to the embodiment has low defects and etching deviation. [Explanation of symbols]

[0534] 210 Cover 220 Upper electrode 230 focus ring 250 First insulating ring 240 Second insulating ring 260 Third insulating ring 270 Electrostatic Chuck

Claims

1. A flat top surface and a lower surface opposite the upper surface, a thickness from the upper surface to the lower surface, The lower surface is the lower surface having a first profile corresponding to a central region of the lower surface and having a first thickness change rate between −0.25 and 0; a second profile surrounding the first profile and having a second thickness change rate of −0.25 to −0.24; a fourth profile surrounding the second profile and having a fourth thickness change rate between −0.003 and 0.003; a sixth profile surrounding the fourth profile and having a sixth thickness change rate of 0.13 to 0.14; and an eighth profile surrounding the sixth profile and having an eighth thickness change rate between −0.003 and 0.003; the first thickness change rate, the second thickness change rate, the fourth thickness change rate, the sixth thickness change rate, and the eighth thickness change rate are values ​​obtained by dividing a change in thickness by a change in radius along a horizontal direction from the center of the lower surface parallel to the upper surface. Upper electrode.

2. the first profile extends from a center of the top surface in the horizontal direction to a first radius; the second profile extends from the first radius to a second radius in the horizontal direction; the fourth profile extends from a third radius to a fourth radius in the horizontal direction; the sixth profile is from a fifth radius to a sixth radius in the horizontal direction; the eighth profile is from a seventh radius to an eighth radius; The upper electrode of claim 1 .

3. the first radius is one of 3 mm to 5 mm; the second radius is one of 16 mm to 19 mm; the third radius is one of 69 mm to 71 mm; the fourth radius is one of 74 mm to 76 mm; the fifth radius is one of 106 mm to 108 mm; the sixth radius is one of 138 mm to 139.5 mm; the seventh radius is one of 141 mm to 142 mm; the eighth radius is one of 144.5 mm to 150 mm; The upper electrode according to claim 2 .

4. a deviation of the second thickness change rate in the second profile is less than 0.01; The upper electrode according to claim 3 .

5. a deviation of the fourth thickness change rate in the fourth profile is less than 0.003; The upper electrode according to claim 4 .

6. the deviation of the eighth thickness change rate in the eighth profile is less than 0.003; The upper electrode according to claim 5 .

7. Contains single crystal silicon, The thickness at the center of the lower surface is 15 mm to 25 mm, The thickness of the sixth profile is 8 mm to 12 mm; The thickness of the eighth profile is 14 mm to 17 mm. The upper electrode of claim 1 .

8. The lower surface is a third profile disposed between the second profile and the fourth profile; a fifth profile disposed between the fourth profile and the sixth profile; and a seventh profile disposed between the sixth profile and the eighth profile; The upper electrode of claim 1 .

9. the third profile has a third thickness change rate of −0.24 to 0; the fifth profile has a fifth thickness change rate between 0 and 0.12; the seventh profile has a seventh thickness change rate of 0 to 0.13; The upper electrode according to claim 8 .

10. the third thickness change rate gradually increases as the distance from the center of the lower surface increases, the fifth thickness change rate gradually increases as the distance from the center of the lower surface increases, The seventh thickness change rate gradually decreases as the distance from the center of the lower surface increases. The upper electrode according to claim 9 .

11. Contains single crystal silicon, the first profile, the second profile, the third profile, the fourth profile, the fifth profile, the sixth profile, the seventh profile, and the eighth profile are connected together; The upper electrode according to claim 10 .

12. an upper electrode disposed above the semiconductor substrate for forming a plasma; an electrostatic chuck supporting the semiconductor substrate and positioned below the semiconductor substrate; and a focus ring that surrounds the semiconductor substrate and is attached to the electrostatic chuck; the upper electrode includes a flat upper surface and a lower surface opposite to the upper surface, a thickness from the upper surface to the lower surface, The lower surface is a first profile corresponding to a central region of the lower surface, the first profile having a first thickness change rate between −0.25 and 0; a second profile surrounding the first profile and having a second thickness change rate of −0.25 to −0.24; a fourth profile surrounding the second profile and having a fourth thickness change rate between −0.003 and 0.003; a sixth profile surrounding the fourth profile and having a sixth thickness change rate of 0.13 to 0.14; and an eighth profile surrounding the sixth profile and having an eighth thickness change rate between −0.003 and 0.003; the first thickness change rate, the second thickness change rate, the fourth thickness change rate, the sixth thickness change rate, and the eighth thickness change rate are values ​​obtained by dividing the change in thickness by the change in radius along a horizontal direction from the center of the lower surface parallel to the upper surface.

13. placing a semiconductor substrate in a semiconductor device manufacturing apparatus; processing the semiconductor substrate; The semiconductor device manufacturing apparatus includes: an upper electrode disposed above the semiconductor substrate for forming a plasma; an electrostatic chuck supporting the semiconductor substrate and positioned below the semiconductor substrate; and a focus ring that surrounds the semiconductor substrate and is attached to the electrostatic chuck; the upper electrode includes a flat upper surface and a lower surface opposite to the upper surface, a thickness from the upper surface to the lower surface, The lower surface is a first profile corresponding to a central region of the lower surface, the first profile having a first thickness change rate between −0.25 and 0; a second profile surrounding the first profile and having a second thickness change rate of −0.25 to −0.24; a fourth profile surrounding the second profile and having a fourth thickness change rate between −0.003 and 0.003; a sixth profile surrounding the fourth profile and having a sixth thickness change rate of 0.13 to 0.14; and an eighth profile surrounding the sixth profile and having an eighth thickness change rate between −0.003 and 0.003; the first thickness change rate, the second thickness change rate, the fourth thickness change rate, the sixth thickness change rate, and the eighth thickness change rate are values ​​obtained by dividing a change in thickness by a change in radius along a horizontal direction from the center of the lower surface parallel to the upper surface. A method for manufacturing semiconductor devices.

14. A semiconductor device manufacturing apparatus to which the upper electrode according to claim 1 is attached.

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