Substrate processing device and substrate processing method

Abstract

To provide a substrate processing device capable of reducing power consumption.SOLUTION: A first liquid supply section 5a supplies a first processing liquid to a substrate W. A first tank 8 stores a liquid to be cooled that is a first processing liquid after being supplied to the substrate W. A heat exchanger 82 is disposed in the first tank 8. The heat exchanger 82 circulates a liquid to be heated having a lower temperature than the liquid to be cooled, thereby cooling the liquid to be cooled stored in the first tank 8. A first supply line 11A supplies the liquid to be heated which circulates through the heat exchanger 82 to be heated by the liquid to be cooled to a temperature adjustment unit 200. The temperature adjustment unit 200 adjusts the temperature of the liquid to be heated supplied to the temperature adjustment unit 200 via the first supply line 11A. A second liquid supply section 5c supplies, to the substrate W, a second processing liquid containing the liquid to be heated after the temperature thereof has been adjusted by the temperature adjustment unit 200.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Substrate processing apparatuses are known that process substrates by supplying a high-temperature chemical solution to the substrate. For example, Patent Document 1 discloses a substrate processing apparatus that supplies a high-temperature SPM (Sulfuric Acid Hydrogen Peroxide Mixture) to the substrate. SPM is a mixture of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2) (sulfuric acid-hydrogen peroxide mixture). The temperature of the SPM is, for example, about 190°C or higher and about 220°C or lower. A resist film can be removed from the substrate by using the SPM.

[0003] After being used in substrate processing, the high-temperature chemical liquid is cooled and then discharged to a waste liquid facility of the factory that the substrate processing apparatus is installed in. For example, Patent Document 1 discloses a configuration in which SPM is cooled by a cooling unit and then discharged from the substrate processing apparatus.

[0004] On the other hand, it is known to use a rinse liquid heated to a temperature higher than room temperature as a rinse liquid for rinsing a high-temperature chemical liquid from a substrate. For example, Patent Document 1 discloses the use of deionized water (DIW) heated to a temperature higher than room temperature as a rinse liquid. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2020-047857 Summary of the Invention [Problem to be solved by the invention]

[0006] However, the configuration of the substrate processing apparatus disclosed in Patent Document 1 always requires power to heat the rinse liquid from room temperature to the processing temperature (target temperature). Therefore, in consideration of power consumption, there is room for further improvement.

[0007] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can reduce power consumption. [Means for solving the problem]

[0008] According to one aspect of the present invention, a substrate processing apparatus includes a first liquid supply unit, a second liquid supply unit, a temperature adjustment unit, a cooling unit, and a first supply line. The first liquid supply unit supplies a first processing liquid to a substrate. The second liquid supply unit supplies a second processing liquid different from the first processing liquid to the substrate. The temperature adjustment unit adjusts the temperature of a liquid to be heated contained in the second processing liquid. The cooling unit cools a liquid to be cooled, which is the first processing liquid, after being supplied to the substrate. The first supply line supplies the liquid to be heated from the cooling unit to the temperature adjustment unit. The cooling unit includes a first tank and a heat exchanger. The first tank stores the liquid to be cooled. The heat exchanger is disposed within the first tank. The heat exchanger cools the liquid to be cooled stored in the first tank by circulating the liquid to be heated, which has a lower temperature than the liquid to be cooled. The first supply line supplies the liquid to be heated, which has circulated through the heat exchanger and been heated by the liquid to be cooled, to the temperature adjustment unit. The temperature adjustment unit adjusts the temperature of the liquid to be heated supplied to the temperature adjustment unit via the first supply line. The second liquid supply unit supplies the second processing liquid, which contains the liquid to be heated after its temperature has been adjusted by the temperature adjustment unit, to the substrate.

[0009] In one embodiment, the cooling unit further includes a second tank and a circulation line. The second tank stores the liquid to be heated, which has a lower temperature than the liquid to be cooled. The circulation line circulates the liquid to be heated between the heat exchanger and the second tank.

[0010] In one embodiment, the first supply line branches off from the circulation line.

[0011] In one embodiment, the first supply line supplies the liquid to be heated from the second tank to the temperature adjustment unit.

[0012] In one embodiment, the first supply line includes a liquid feed pump that feeds the liquid to be heated from the second tank toward the temperature adjustment unit.

[0013] In one embodiment, the cooling unit further includes a first water level sensor. The first water level sensor detects whether the water level of the liquid to be heated stored in the second tank is at a predetermined water level. The substrate processing apparatus further includes a second supply line and a control unit. The second supply line supplies the liquid to be heated, which has a lower temperature than the liquid to be cooled, to the second tank. The second supply line includes an on-off valve that controls the flow of the liquid to be heated through the second supply line. The control unit controls the on-off valve based on the detection result of the first water level sensor.

[0014] In one embodiment, the temperature adjustment unit includes a heater and a temperature sensor. The heater adjusts the temperature of the liquid to be heated that is supplied to the temperature adjustment unit via the first supply line. The temperature sensor detects the temperature of the liquid to be heated that is supplied to the temperature adjustment unit via the first supply line. The substrate processing apparatus further includes a controller. The controller controls the heater based on the temperature detected by the temperature sensor.

[0015] In one embodiment, the temperature adjustment unit includes a heater, a temperature sensor, and a flow rate control unit. The heater adjusts the temperature of the liquid to be heated that is supplied to the temperature adjustment unit via the first supply line. The temperature sensor detects the temperature of the liquid to be heated that is supplied to the temperature adjustment unit via the first supply line. The flow rate control unit is provided upstream of the heater. The flow rate control unit controls the flow rate of the liquid to be heated that is supplied to the temperature adjustment unit via the first supply line. The substrate processing apparatus further includes a control unit. The control unit controls the flow rate control unit based on the temperature detected by the temperature sensor.

[0016] In one embodiment, the temperature adjustment unit includes a third tank and a second water level sensor. The third tank stores the liquid to be heated, which is supplied to the temperature adjustment unit via the first supply line. The second water level sensor detects whether the water level of the liquid to be heated stored in the third tank is at a predetermined level. The substrate processing apparatus further includes a controller. The controller controls the supply of the liquid to be heated to the temperature adjustment unit via the first supply line based on the detection result of the second water level sensor.

[0017] In one embodiment, the first treatment liquid contains sulfuric acid.

[0018] In one embodiment, the liquid to be heated includes water.

[0019] In one embodiment, the second processing liquid includes a rinse liquid, and the rinse liquid contains only the liquid to be heated.

[0020] In one embodiment, the substrate processing apparatus further includes a third liquid supply unit that supplies a third processing liquid to the substrate, the third processing liquid being different from the first processing liquid and the second processing liquid. The third processing liquid contains ammonia water, hydrogen peroxide water, and the temperature-increasing liquid after the temperature has been adjusted by the temperature adjustment unit.

[0021] According to another aspect of the present invention, a substrate processing method includes the steps of: supplying a first processing liquid to a substrate; draining the first processing liquid, i.e., a liquid to be cooled after being supplied to the substrate, into a first tank of a cooling unit; cooling the liquid to be cooled by heat exchange between the liquid to be cooled stored in the first tank and a liquid to be heated that has a lower temperature than the liquid to be cooled; supplying the liquid to be heated, whose temperature has been increased by heat exchange with the liquid to be cooled, from the cooling unit to a temperature adjustment unit; adjusting the temperature of the liquid to be heated by the temperature adjustment unit; and supplying a second processing liquid, different from the first processing liquid, to the substrate. The second processing liquid contains the liquid to be heated whose temperature has been adjusted by the temperature adjustment unit.

[0022] In one embodiment, in the cooling step, the liquid to be heated is circulated between a second tank that stores the liquid to be heated and a heat exchanger that performs heat exchange between the liquid to be cooled and the liquid to be heated.

[0023] In one embodiment, in the supplying step, the liquid to be heated is supplied to the temperature adjustment unit from a circulation line that circulates the liquid to be heated between the second tank and the heat exchanger.

[0024] In one embodiment, the supply step supplies the liquid to be heated from the second tank to the temperature adjustment unit.

[0025] In one embodiment, in the supplying step, the liquid to be heated is supplied from the second tank to the temperature adjustment unit by a liquid feed pump.

[0026] In one embodiment, the substrate processing method further includes a step of supplying the liquid to be heated, which has a lower temperature than the liquid to be cooled, to the second tank based on the water level of the liquid to be heated stored in the second tank.

[0027] In one embodiment, the temperature adjustment unit includes a heater that adjusts the temperature of the liquid to be heated that is supplied from the cooling unit to the temperature adjustment unit. The substrate processing method further includes controlling the heater based on the temperature of the liquid to be heated that is supplied from the cooling unit to the temperature adjustment unit.

[0028] In one embodiment, the temperature adjustment unit includes a heater and a flow rate control unit. The heater adjusts the temperature of the liquid to be heated that is supplied from the cooling unit to the temperature adjustment unit. The flow rate control unit is provided upstream of the heater and controls the flow rate of the liquid to be heated that is supplied from the cooling unit to the temperature adjustment unit. The substrate processing method further includes a step of controlling the flow rate control unit based on the temperature of the liquid to be heated that is supplied from the cooling unit to the temperature adjustment unit.

[0029] In one embodiment, the temperature adjustment unit includes a third tank that stores the temperature-target liquid supplied from the cooling unit to the temperature adjustment unit. The substrate processing method further includes controlling the supply of the temperature-target liquid from the cooling unit to the temperature adjustment unit based on the level of the temperature-target liquid stored in the third tank.

[0030] In one embodiment, the first treatment liquid contains sulfuric acid.

[0031] In one embodiment, the liquid to be heated includes water.

[0032] In one embodiment, the second processing liquid includes a rinse liquid, and the rinse liquid contains only the liquid to be heated.

[0033] In one embodiment, the substrate processing method further includes supplying to the substrate a third processing liquid different from the first processing liquid and the second processing liquid, the third processing liquid containing ammonia water, hydrogen peroxide water, and the temperature-raising liquid whose temperature has been adjusted by the temperature adjustment unit. [Effects of the Invention]

[0034] According to the substrate processing apparatus and substrate processing method of the present invention, power consumption can be reduced. [Brief explanation of the drawings]

[0035] [Figure 1] 1 is a schematic plan view of a substrate processing apparatus according to a first embodiment of the present invention. [Figure 2] 1 is a diagram schematically illustrating a configuration of a substrate processing section included in a substrate processing apparatus according to a first embodiment of the present invention. [Figure 3] 3 is a diagram showing a flow of processing executed by a control unit included in the substrate processing apparatus according to the first embodiment of the present invention. [Figure 4] 1 is a diagram showing a part of the configuration of a substrate processing apparatus according to a first embodiment of the present invention. [Figure 5] 2 is a diagram showing a configuration of a second processing liquid supply unit included in the substrate processing apparatus according to the first embodiment of the present invention. FIG. [Figure 6] 1 is a diagram showing the configuration of a hot water supply line, a hot water unit, and a cooling unit included in a substrate processing apparatus according to a first embodiment of the present invention. [Figure 7] 5 is a diagram showing a flow of a first replenishing process executed by a control unit included in the substrate processing apparatus according to the first embodiment of the present invention. FIG. [Figure 8] 1 is a diagram showing a flow of a heating process executed by a control unit included in the substrate processing apparatus according to the first embodiment of the present invention. [Figure 9] 1A is a diagram showing a first state of a cooling unit, a hot water supply line, and a hot water unit included in a substrate processing apparatus according to a first embodiment of the present invention, and FIG. 1B is a diagram showing a second state of a cooling unit, a hot water supply line, and a hot water unit included in a substrate processing apparatus according to a first embodiment of the present invention. [Figure 10] 10 is a diagram showing a flow of a second replenishing process executed by a control unit included in the substrate processing apparatus according to the first embodiment of the present invention. FIG. [Figure 11] 1A to 1C are diagrams illustrating a substrate processing method according to a first embodiment of the present invention. [Figure 12] FIG. 12 is a diagram showing a supplying step (step S44) in FIG. [Figure 13] 5A to 5C are diagrams illustrating a replenishing step included in the substrate processing method according to the first embodiment of the present invention. [Figure 14] 3A to 3C are diagrams illustrating a heating step included in the substrate processing method according to the first embodiment of the present invention. [Figure 15] FIG. 10 is a diagram showing the configuration of a hot water supply line, a hot water unit, and a cooling unit included in a substrate processing apparatus according to a second embodiment of the present invention. [Figure 16] FIG. 10 is a diagram showing a flow of a flow rate control process executed by a control unit included in a substrate processing apparatus according to a second embodiment of the present invention. [Figure 17] FIG. 10 is a diagram illustrating a heating step included in a substrate processing method according to a second embodiment of the present invention. [Figure 18] FIG. 10 is a diagram showing the configuration of a hot water supply line, a hot water unit, and a cooling unit included in a substrate processing apparatus according to a third embodiment of the present invention. [Figure 19] 1(a) is a diagram showing a first state of a cooling unit, a hot water supply line, and a hot water unit included in a substrate processing apparatus according to embodiment 3. FIG. 1(b) is a diagram showing a second state of a cooling unit, a hot water supply line, and a hot water unit included in a substrate processing apparatus according to embodiment 3. DETAILED DESCRIPTION OF THE INVENTION

[0036] Hereinafter, embodiments of the substrate processing apparatus and substrate processing method of the present invention will be described with reference to the drawings (FIGS. 1 to 19(b)). However, the present invention is not limited to the following embodiments, and can be implemented in various forms without departing from the spirit of the present invention. Note that where explanations are redundant, they may be omitted as appropriate. Furthermore, in the drawings, the same or equivalent parts are designated by the same reference symbols, and explanations will not be repeated.

[0037] The "substrate" to be processed in the substrate processing apparatus and substrate processing method according to the present invention can be a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for an FED (Field Emission Display), a substrate for an optical disk, a substrate for a magnetic disk, or a substrate for a magneto-optical disk. The following description of an embodiment of the present invention will be primarily focused on a case where a disk-shaped semiconductor wafer is the substrate to be processed. However, the substrate processing apparatus and substrate processing method according to the present invention can be similarly applied to various substrates other than the semiconductor wafers described above. Furthermore, the shape of the substrate is not limited to a disk shape, and the substrate processing apparatus and substrate processing method according to the present invention can be applied to substrates of various shapes.

[0038] [Embodiment 1] First, a first embodiment of the present invention will be described with reference to Figures 1 to 14. Figure 1 is a schematic plan view of a substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 processes substrates W. More specifically, the substrate processing apparatus 100 is a single-wafer processing apparatus, and processes substrates W one by one using multiple types of processing liquids.

[0039] As shown in FIG. 1, the substrate processing apparatus 100 includes a plurality of load ports LP, an indexer robot IR, a center robot CR, a plurality of substrate processing units 101, and a control device .

[0040] A cassette CA is placed on each load port LP. The cassette CA accommodates one or more stacked substrates W. The cassette CA may be, for example, a FOUP (Front Opening Unified Pod), a SMIF (Standard Mechanical Interface) pod, or an OC (Open Cassette).

[0041] The indexer robot IR transports substrates W between the cassette CA and the center robot CR. The center robot CR transports substrates W between the indexer robot IR and a plurality of substrate processing units 101. Note that a placement stage (path) on which the substrate W is temporarily placed may be provided between the indexer robot IR and the center robot CR, and the device may be configured so that the substrate W is transferred indirectly between the indexer robot IR and the center robot CR via the placement stage.

[0042] The substrate processing units 101 form a plurality of towers TW. The towers TW are arranged to surround the center robot CR in a plan view. Each tower TW includes a plurality of substrate processing units 101 stacked one above the other.

[0043] In this embodiment, the multiple substrate processing units 101 form four towers TW (first tower TW1, second tower TW2, third tower TW3, and fourth tower TW4). Each of the first tower TW1, second tower TW2, third tower TW3, and fourth tower TW4 includes three substrate processing units 101 stacked one above the other.

[0044] Each of the substrate processing units 101 sequentially supplies a plurality of types of processing liquids onto the upper surface of the substrate W. As a result, the substrate W is processed. Specifically, each of the substrate processing units 101 supplies a first processing liquid, a second processing liquid, and a third processing liquid onto the substrate W in this order.

[0045] In this embodiment, the substrate processing unit 101 supplies SPM (Sulfuric acid hydrogen peroxide mixture), SC1 (ammonia hydrogen peroxide solution mixture), and a rinse liquid to the substrate W in the following order: SPM, rinse liquid, SC1, rinse liquid. The SPM removes a resist film from the substrate W. The rinse liquid supplied to the substrate after the SPM rinses away the SPM from the substrate W. The SC1 removes sulfur and the like remaining on the substrate W. The rinse liquid supplied to the substrate after the SC1 rinses away the SC1 from the substrate W.

[0046] SPM contains sulfuric acid (H2SO4). Specifically, SPM is a mixture of sulfuric acid and hydrogen peroxide (H2O2) (sulfuric acid-hydrogen peroxide mixture). SPM is an example of a "first treatment liquid." The temperature of SPM is, for example, 120°C or higher and 200°C or lower. SPM is an example of a "high-temperature chemical liquid."

[0047] The rinse liquid is, for example, water such as pure water. The pure water may be, for example, deionized water (DIW). More specifically, the rinse liquid may be ultrapure water.

[0048] The temperature of the rinse liquid supplied to the substrate W after SPM is higher than room temperature. Room temperature is, for example, 20°C or higher and 25°C or lower. For example, the temperature of the rinse liquid supplied to the substrate W after SPM is 40°C or higher and 80°C or lower. The temperature of the rinse liquid supplied to the substrate W after SC1 may be, for example, room temperature. A rinse liquid having a temperature higher than room temperature is an example of a "second processing liquid."

[0049] SC1 contains ammonia water (NH4OH), hydrogen peroxide water, and water such as pure water. Specifically, SC1 is a mixture of ammonia water, hydrogen peroxide water, and water such as pure water. SC1 is an example of a "third processing liquid." The temperature of SC1 is higher than room temperature. For example, the temperature of SC1 is 40°C or higher and 80°C or lower.

[0050] According to this embodiment, a rinse liquid having a temperature higher than room temperature is supplied to the substrate W after the high-temperature chemical liquid has been supplied, thereby preventing the substrate W from rapidly shrinking. Specifically, the substrate W expands when the high-temperature chemical liquid is supplied. When, for example, a rinse liquid at room temperature is supplied to the expanded substrate W, the substrate W is rapidly cooled. As a result, the substrate W rapidly shrinks. In contrast, according to this embodiment, a rinse liquid having a temperature higher than room temperature is supplied to the expanded substrate W, so the substrate W is not rapidly cooled. As a result, rapid shrinkage of the substrate W can be prevented.

[0051] Furthermore, according to this embodiment, SC1 having a temperature higher than room temperature is supplied to the substrate W. As a result, sulfur and the like remaining on the substrate W can be removed more efficiently than when SC1 at room temperature is used. Therefore, according to this embodiment, the particle removal rate can be improved compared to when SC1 at room temperature is used.

[0052] The control device 102 controls the operation of each part of the substrate processing apparatus 100. For example, the control device 102 controls the load port LP, the indexer robot IR, the center robot CR, and the substrate processing unit 101. Specifically, the control device 102 includes a control unit 103 and a memory unit 104.

[0053] The control unit 103 controls the operation of each unit of the substrate processing apparatus 100 based on various information stored in the storage unit 104. The control unit 103 has, for example, a processor. The control unit 103 may have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as the processor. Alternatively, the control unit 103 may have a general-purpose computing unit or a dedicated computing unit.

[0054] The storage unit 104 stores various information for controlling the operation of the substrate processing apparatus 100. For example, the storage unit 104 stores data and computer programs. The data includes various recipe data. The recipe data includes, for example, a process recipe. The process recipe is data that defines the procedure for substrate processing. Specifically, the process recipe defines the execution order of a series of processes included in the substrate processing, the content of each process, and the conditions (parameter setting values) for each process.

[0055] The storage unit 104 includes a main storage device. The main storage device includes, for example, a semiconductor memory. The storage unit 104 may further include an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 104 may also include removable media.

[0056] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 and 2. Figure 2 is a diagram schematically showing the configuration of a substrate processing unit 101 included in the substrate processing apparatus 100 of this embodiment. In detail, Figure 2 shows the substrate processing unit 101 included in the first tower TW1.

[0057] 2, the substrate processing unit 101 includes a processing chamber 101a, a substrate holding unit 3, a substrate rotating unit 4, a first processing liquid supply unit 5a, a second processing liquid supply unit 5b, a third processing liquid supply unit 5c, a first nozzle moving unit 6a, a second nozzle moving unit 6b, a third nozzle moving unit 6c, a liquid receiving unit 7, and a liquid receiving moving unit 75. The substrate processing apparatus 100 further includes a drain tank 400A, a cooling unit 800, a drain pipe 301a, and a drain pipe 401a.

[0058] The processing chamber 101a has a generally box-like shape. The processing chamber 101a accommodates the substrate W, the substrate holder 3, the substrate rotator 4, part of the first processing liquid supply unit 5a, part of the second processing liquid supply unit 5b, part of the third processing liquid supply unit 5c, the first nozzle movement unit 6a, the second nozzle movement unit 6b, the third nozzle movement unit 6c, the liquid receiver 7, and the liquid receiver movement unit 75. The substrate W is loaded into the processing chamber 101a and processed in the processing chamber 101a. That is, substrate processing is performed in the processing chamber 101a. The processing chamber 101a is, for example, a chamber.

[0059] The substrate holder 3 holds the substrate W horizontally in the processing chamber 101a. The substrate holder 3 is controlled by the controller 103. Specifically, the substrate holder 3 may include a spin base 31 and a plurality of chuck members 32.

[0060] The spin base 31 is substantially disk-shaped and supports a plurality of chuck members 32 in a horizontal position. The plurality of chuck members 32 are arranged on the periphery of the spin base 31. The plurality of chuck members 32 clamp the periphery of the substrate W. The plurality of chuck members 32 hold the substrate W in a horizontal position. The operation of the plurality of chuck members 32 is controlled by the control unit 103.

[0061] The substrate rotator 4 rotates the substrate W integrally with the substrate holder 3. Specifically, the substrate rotator 4 rotates the substrate holder 3, which holds the substrate W, about a first rotation axis AX1 that extends vertically. The substrate rotator 4 is controlled by the controller 103. More specifically, the first rotation axis AX1 passes through the center of the spin base 31. The multiple chuck members 32 are arranged so that the center of the substrate W faces the center of the spin base 31. Therefore, the substrate W rotates about the center of the substrate W as the center of rotation.

[0062] Specifically, the substrate rotation unit 4 may have a drive unit 41 and a shaft 42. The shaft 42 is coupled to the center of the spin base 31 and extends downward from the spin base 31. The drive unit 41 generates a drive force that rotates the substrate W integrally with the substrate holder 3. More specifically, the drive unit 41 rotates the shaft 42 about a first rotation axis AX1. As a result, the spin base 31 rotates. The drive unit 41 is controlled by the control unit 103. The drive unit 41 includes, for example, an electric motor.

[0063] The first processing liquid supply unit 5a supplies a processing liquid to the substrate W held by the substrate holder 3. The first processing liquid supply unit 5a is an example of a "first liquid supply unit." In this embodiment, the first processing liquid supply unit 5a supplies SPM (first processing liquid) to the substrate W.

[0064] Specifically, the first processing liquid supply unit 5a includes a first nozzle 51a, a first processing liquid pipe 521, a second processing liquid pipe 522, a first processing liquid on-off valve 531, and a second processing liquid on-off valve 532.

[0065] The first nozzle 51a is housed in the processing chamber 101a. The first nozzle 51a ejects SPM (first processing liquid) toward the upper surface of the substrate W held by the substrate holder 3. As a result, the SPM is supplied from the first nozzle 51a to the upper surface of the substrate W. More specifically, the first nozzle 51a ejects the SPM toward the upper surface of the substrate W while it is rotating. As a result, a liquid film of SPM is formed on the upper surface of the substrate W.

[0066] The first processing liquid pipe 521 and the second processing liquid pipe 522 are tubular members through which processing liquids flow. Specifically, one end of the second processing liquid pipe 522 is connected to the first processing liquid pipe 521. The second processing liquid pipe 522 flows sulfuric acid up to the first processing liquid pipe 521. As a result, sulfuric acid is supplied to the first processing liquid pipe 521. The temperature of the sulfuric acid is, for example, 90°C or higher and 180°C or lower.

[0067] One end of the first treatment liquid pipe 521 is connected to the first nozzle 51a. A portion of the first treatment liquid pipe 521 is housed within the treatment chamber 101a. The first treatment liquid pipe 521 circulates hydrogen peroxide solution. As a result, sulfuric acid and hydrogen peroxide solution are mixed in the first treatment liquid pipe 521 to generate SPM. The temperature of the hydrogen peroxide solution is, for example, room temperature. Room temperature is, for example, not less than 20°C and not more than 25°C. When sulfuric acid and hydrogen peroxide solution are mixed, the sulfuric acid and hydrogen peroxide solution react with each other. As a result, SPM are generated at, for example, not less than 120°C and not more than 200°C.

[0068] The first processing liquid pipe 521 allows the SPM to flow up to the first nozzle 51a. As a result, the SPM is supplied to the first nozzle 51a and is discharged from the first nozzle 51a.

[0069] The first treatment liquid on-off valve 531 and the second treatment liquid on-off valve 532 can be opened and closed. The opening and closing operations of the first treatment liquid on-off valve 531 and the second treatment liquid on-off valve 532 are controlled by the control unit 103. The actuators of the first treatment liquid on-off valve 531 and the second treatment liquid on-off valve 532 are, for example, pneumatic actuators or electric actuators.

[0070] The first treatment liquid on-off valve 531 is provided in the first treatment liquid pipe 521 upstream of a connection point P1 between the first treatment liquid pipe 521 and the second treatment liquid pipe 522. In other words, the second treatment liquid pipe 522 is connected to the first treatment liquid pipe 521 downstream of the first treatment liquid on-off valve 531. The first treatment liquid on-off valve 531 controls the flow of hydrogen peroxide solution through the first treatment liquid pipe 521. Specifically, when the first treatment liquid on-off valve 531 opens, the hydrogen peroxide solution flows through the first treatment liquid pipe 521. When the first treatment liquid on-off valve 531 closes, the flow of hydrogen peroxide solution through the first treatment liquid pipe 521 stops.

[0071] The second treatment liquid on-off valve 532 is provided in the second treatment liquid pipe 522. The second treatment liquid on-off valve 532 controls the flow of sulfuric acid through the second treatment liquid pipe 522. Specifically, when the second treatment liquid on-off valve 532 opens, sulfuric acid flows through the second treatment liquid pipe 522. When the second treatment liquid on-off valve 532 closes, the flow of sulfuric acid through the second treatment liquid pipe 522 stops.

[0072] When discharging SPM from the first nozzle 51a, the control unit 103 opens the first treatment liquid on-off valve 531 and the second treatment liquid on-off valve 532. When stopping the discharge of SPM from the first nozzle 51a, the control unit 103 closes the first treatment liquid on-off valve 531 and the second treatment liquid on-off valve 532.

[0073] More specifically, the first processing liquid supply unit 5a supplies SPM to the substrate W, and then supplies hydrogen peroxide solution to the substrate W. Specifically, the control unit 103 first opens the first processing liquid on-off valve 531 and the second processing liquid on-off valve 532 to discharge SPM from the first nozzle 51a. Thereafter, the control unit 103 closes the second processing liquid on-off valve 532 to stop the inflow of sulfuric acid from the second processing liquid pipe 522 to the first processing liquid pipe 521. As a result, the hydrogen peroxide solution flows through the first processing liquid pipe 521 to the first nozzle 51a, and is discharged from the first nozzle 51a.

[0074] The second processing liquid supply unit 5b supplies a processing liquid to the substrate W held by the substrate holder 3. The second processing liquid supply unit 5b is an example of a "third liquid supply unit." In this embodiment, the second processing liquid supply unit 5b supplies SC1 (third processing liquid) to the substrate W. As already explained, the temperature of SC1 is higher than room temperature. For example, the temperature of SC1 is 40°C or higher and 80°C or lower.

[0075] Specifically, the second processing liquid supply unit 5b includes a second nozzle 51b, a third processing liquid pipe 523, and a third processing liquid on-off valve 533.

[0076] The second nozzle 51b is housed in the processing chamber 101a. The second nozzle 51b ejects SC1 (third processing liquid) toward the upper surface of the substrate W held by the substrate holder 3. As a result, SC1 is supplied from the second nozzle 51b to the upper surface of the substrate W. More specifically, the second nozzle 51b ejects SC1 toward the upper surface of the substrate W while it is rotating. As a result, a liquid film of SC1 is formed on the upper surface of the substrate W.

[0077] The third processing liquid pipe 523 is a tubular member through which the processing liquid flows. Specifically, one end of the third processing liquid pipe 523 is connected to the second nozzle 51b. A portion of the third processing liquid pipe 523 is housed within the processing chamber 101a. The third processing liquid pipe 523 flows SC1 to the second nozzle 51b. As a result, SC1 is supplied to the second nozzle 51b and is discharged from the second nozzle 51b.

[0078] The third treatment liquid on-off valve 533 is provided in the third treatment liquid pipe 523. The third treatment liquid on-off valve 533 controls the flow of SC1 through the third treatment liquid pipe 523. Specifically, when the third treatment liquid on-off valve 533 is opened, SC1 flows through the third treatment liquid pipe 523. When the third treatment liquid on-off valve 533 is closed, the flow of SC1 through the third treatment liquid pipe 523 stops.

[0079] When discharging SC1 from the second nozzle 51b, the control unit 103 opens the third treatment liquid on-off valve 533. When stopping the discharge of SC1 from the second nozzle 51b, the control unit 103 closes the third treatment liquid on-off valve 533. Note that the configuration of the third treatment liquid on-off valve 533 is substantially the same as the first treatment liquid on-off valve 531 and the second treatment liquid on-off valve 532, and therefore detailed description thereof will be omitted.

[0080] The third processing liquid supply unit 5c supplies a processing liquid to the substrate W held by the substrate holder 3. The third processing liquid supply unit 5c is an example of a "second liquid supply unit." In this embodiment, the third processing liquid supply unit 5c selectively supplies to the substrate W one of a rinsing liquid (second processing liquid) having a temperature higher than room temperature and a rinsing liquid at room temperature.

[0081] Specifically, the third treatment liquid supply unit 5c includes a third nozzle 51c, a fourth treatment liquid pipe 524, a fifth treatment liquid pipe 525, a fourth treatment liquid on-off valve 534, and a fifth treatment liquid on-off valve 535.

[0082] The fourth processing liquid pipe 524 and the fifth processing liquid pipe 525 are tubular members through which processing liquids flow. One end of the fifth processing liquid pipe 525 is connected to the fourth processing liquid pipe 524. One end of the fourth processing liquid pipe 524 is connected to the third nozzle 51c. The third nozzle 51c is housed in the processing chamber 101a. A portion of the fourth processing liquid pipe 524 is housed in the processing chamber 101a.

[0083] The fourth treatment liquid on-off valve 534 is provided in the fourth treatment liquid pipe 524 upstream of a connection point P2 between the fourth treatment liquid pipe 524 and the fifth treatment liquid pipe 525. In other words, the fifth treatment liquid pipe 525 is connected to the fourth treatment liquid pipe 524 downstream of the fourth treatment liquid on-off valve 534. The fifth treatment liquid on-off valve 535 is provided in the fifth treatment liquid pipe 525. Note that the configurations of the fourth treatment liquid on-off valve 534 and the fifth treatment liquid on-off valve 535 are substantially the same as those of the first treatment liquid on-off valve 531 and the second treatment liquid on-off valve 532, and therefore detailed description thereof will be omitted.

[0084] A rinse liquid (second treatment liquid) having a temperature higher than room temperature is supplied to the fourth treatment liquid pipe 524. The rinse liquid may be water such as pure water. In other words, water having a temperature higher than room temperature may be supplied to the fourth treatment liquid pipe 524 as the rinse liquid. Hereinafter, water having a temperature higher than room temperature may be referred to as "warm water." In this embodiment, DIW (deionized water) having a temperature higher than room temperature is supplied to the fourth treatment liquid pipe 524 as the rinse liquid.

[0085] For example, a rinse liquid at room temperature may be supplied to the fifth processing liquid pipe 525. In other words, a rinse liquid having a temperature lower than that of hot water may be supplied to the fifth processing liquid pipe 525. In this embodiment, DIW at room temperature is supplied to the fifth processing liquid pipe 525 as the rinse liquid.

[0086] When hot water is to be discharged from the third nozzle 51c, the control unit 103 opens the fourth processing liquid on-off valve 534 and closes the fifth processing liquid on-off valve 535. As a result, the hot water flows through the fourth processing liquid piping 524 to the third nozzle 51c, and the third nozzle 51c discharges the hot water (second processing liquid) toward the upper surface of the substrate W held by the substrate holder 3. More specifically, the third nozzle 51c discharges the hot water toward the upper surface of the substrate W while it is rotating. As a result, a liquid film of hot water is formed on the upper surface of the substrate W.

[0087] When the control unit 103 discharges room-temperature DIW from the third nozzle 51c, it closes the fourth processing liquid on-off valve 534 and opens the fifth processing liquid on-off valve 535 to allow the room-temperature DIW to flow from the fifth processing liquid pipe 525 to the fourth processing liquid pipe 524. As a result, the room-temperature DIW flows through the fourth processing liquid pipe 524 to the third nozzle 51c, and is discharged from the third nozzle 51c toward the upper surface of the substrate W held by the substrate holder 3.

[0088] More specifically, the third nozzle 51c ejects the DIW at room temperature toward the upper surface of the rotating substrate W. As a result, a liquid film of the DIW at room temperature is formed on the upper surface of the substrate W. The DIW at room temperature may be supplied to the fifth processing liquid pipe 525 from, for example, a factory where the substrate processing apparatus 100 is installed.

[0089] In the following description, when it is not necessary to distinguish between hot water and room temperature DIW, both hot water and room temperature DIW may be referred to as "rinse liquid."

[0090] The first nozzle moving unit 6a moves the first nozzle 51a in the vertical and horizontal directions. The first nozzle moving unit 6a is controlled by the control unit 103. More specifically, the first nozzle moving unit 6a moves the first nozzle 51a between a first standby position and a processing position. The first standby position is a position outside the liquid receiving unit 7. The processing position is a position facing the upper surface of the substrate W held by the substrate holding unit 3. In this embodiment, the processing position is a position facing the center of the substrate W. The first nozzle moving unit 6a moves the first nozzle 51a to the processing position when processing the substrate W with SPM (first processing liquid). As a result, SPM is discharged from the first nozzle 51a toward the center of the substrate W.

[0091] Specifically, the first nozzle moving section 6 a may have a nozzle arm 61 , a nozzle base 62 , and a nozzle moving mechanism 63 .

[0092] The nozzle base 62 extends in the vertical direction. The nozzle arm 61 is connected to the nozzle base 62. The nozzle arm 61 extends in the horizontal direction from the nozzle base 62. The nozzle arm 61 supports the first nozzle 51a. For example, the first nozzle 51a is fixed to the tip of the nozzle arm 61 and protrudes downward from the tip of the nozzle arm 61.

[0093] The nozzle moving mechanism 63 moves the nozzle arm 61 in the vertical and horizontal directions. As a result, the first nozzle 51a moves in the vertical and horizontal directions. The nozzle moving mechanism 63 is controlled by the control unit 103.

[0094] Specifically, the nozzle movement mechanism 63 has a rotation mechanism and an elevation mechanism. The rotation mechanism rotates the nozzle base 62 in both forward and reverse directions around a second rotation axis AX2 extending vertically. As a result, the first nozzle 51a moves along a horizontal plane. The elevation mechanism raises and lowers the nozzle base 62 in the vertical direction. As a result, the first nozzle 51a moves vertically. The actuator of the rotation mechanism may have, for example, a servo motor such as a stepping motor and a reducer. The actuator of the elevation mechanism may have, for example, a ball screw and an electric motor that can rotate forward and backward.

[0095] The second nozzle moving unit 6b, like the first nozzle moving unit 6a, moves the second nozzle 51b in the vertical and horizontal directions. The second nozzle moving unit 6b is controlled by the control unit 103. More specifically, like the first nozzle moving unit 6a, the second nozzle moving unit 6b moves the second nozzle 51b between a second standby position and a processing position. The second standby position is a position outside the liquid receiving unit 7 that is different from the first standby position. The configuration of the second nozzle moving unit 6b is substantially the same as that of the first nozzle moving unit 6a, so a description thereof will be omitted.

[0096] The third nozzle moving unit 6c moves the third nozzle 51c in the vertical and horizontal directions, similar to the first nozzle moving unit 6a and the second nozzle moving unit 6b. The third nozzle moving unit 6c is controlled by the control unit 103. More specifically, similar to the first nozzle moving unit 6a and the second nozzle moving unit 6b, the third nozzle moving unit 6c moves the third nozzle 51c between a third standby position and a processing position. The third standby position is a position outside the liquid receiving unit 7 that is different from the first standby position and the second standby position. The configuration of the third nozzle moving unit 6c is substantially the same as that of the first nozzle moving unit 6a, and therefore a description thereof will be omitted.

[0097] The liquid receiving part 7 surrounds the substrate W held by the substrate holder 3 and receives the processing liquids (SPM, SC1, and rinse liquid) discharged from the substrate W. Specifically, the liquid receiving part 7 may have a first liquid receiving part 71, a second liquid receiving part 72, and a third liquid receiving part 73. In this embodiment, the first liquid receiving part 71 receives the SPM discharged from the substrate W. The second liquid receiving part 72 receives the SC1 and rinse liquid discharged from the substrate W.

[0098] More specifically, the first liquid receiving portion 71 has a first guard portion 711 and a first cup portion 712. The second liquid receiving portion 72 has a second guard portion 721 and a second cup portion 722. The third liquid receiving portion 73 is a guard portion. Hereinafter, the third liquid receiving portion 73 may be referred to as the "third guard portion 73."

[0099] The liquid receiver moving unit 75 moves the first guard unit 711, the second guard unit 721, and the third guard unit 73, so that the first guard unit 711 receives the SPM discharged from the substrate W, and the second guard unit 721 receives the rinse liquid and SC1 discharged from the substrate W. The liquid receiver moving unit 75 is controlled by the control unit 103. Specifically, the liquid receiver moving unit 75 may have a first lifting / lowering unit 75a, a second lifting / lowering unit 75b, and a third lifting / lowering unit 75c.

[0100] The first lifting unit 75a raises and lowers the first guard unit 711 between a first upper position and a first lower position. When the first guard unit 711 is located at the first upper position, the upper end of the first guard unit 711 is located above the substrate W held by the substrate holding unit 3. When the first guard unit 711 is located at the first lower position, the upper end of the first guard unit 711 is located below the substrate W held by the substrate holding unit 3. Figure 2 shows the first guard unit 711 located at the first upper position.

[0101] Similarly, the second lifting / lowering unit 75b raises and lowers the second guard portion 721 between the second upper position and the second lower position. The third lifting / lowering unit 75c raises and lowers the third guard portion 73 between the third upper position and the third lower position. Figure 2 shows the second guard portion 721 in the second upper position and the third guard portion 73 in the third upper position.

[0102] The first to third lifting / lowering units 75a to 75c are controlled by the control unit 103. Each of the first to third lifting / lowering units 75a to 75c may have, for example, a ball screw and an electric motor that can rotate forward and backward.

[0103] More specifically, the first guard part 711 has a substantially cylindrical shape. When the first guard part 711 is located at the first upper position, it surrounds the substrate W held by the substrate holder 3 and receives the processing liquid (SPM) discharged from the substrate W.

[0104] The first cup portion 712 is an annular member arranged around the substrate rotation portion 4. The first cup portion 712 has an annular groove with an open upper surface. The lower end of the annular shape of the first guard portion 711 is located inside the annular groove of the first cup portion 712. As a result, the processing liquid (SPM) received by the first guard portion 711 is collected in the groove of the first cup portion 712. The SPM collected in the first cup portion 712 are SPMs that have been supplied to the substrate W. In other words, the SPMs collected in the first cup portion 712 are SPMs that have been used for substrate processing (used SPMs).

[0105] The second guard part 721 is a substantially cylindrical member disposed around (outside) the first guard part 711. When the second guard part 721 is located at the second upper position and the first guard part 711 is located at the first lower position, the second guard part 721 surrounds the substrate W held by the substrate holder 3 and receives the processing liquid (SC1 and rinse liquid) discharged from the substrate W.

[0106] The second cup portion 722 has an annular groove with an open top, similar to the first cup portion 712. The processing liquid (SC1 and rinse liquid) received by the second guard portion 721 is collected in the groove of the second cup portion 722. The SC1 collected in the second cup portion 722 is the SC1 after it has been supplied to the substrate W (the used SC1). The rinse liquid collected in the second cup portion 722 is the rinse liquid after it has been supplied to the substrate W (the used rinse liquid). The configuration of the second cup portion 722 is substantially the same as that of the first cup portion 712, and therefore a description thereof will be omitted.

[0107] The third guard portion 73 is a substantially cylindrical member that is disposed around (outside) the second guard portion 721.

[0108] The cooling unit 800 is disposed outside the processing chamber 101a. The cooling unit 800 is located below the processing chamber 101a. The drainage pipe 301a is a tubular member through which the processing liquid flows. The drainage pipe 301a guides used SPM to the cooling unit 800. Specifically, one end of the drainage pipe 301a is connected to the bottom of the first cup portion 712. Used SPM collected in the first cup portion 712 flows into the drainage pipe 301a. In other words, the drainage pipe 301a discharges used SPM from the first cup portion 712 (liquid receiving portion 7). The drainage pipe 301a extends from the inside to the outside of the processing chamber 101a. Therefore, used SPM is discharged from the processing chamber 101a by the drainage pipe 301a. The other end of the drainage pipe 301a is connected to the cooling unit 800. As a result, the used SPM flows into the cooling unit 800 .

[0109] As already explained, SPM is at a high temperature. The cooling unit 800 cools the SPM after use. The SPM after use is an example of a "liquid to be cooled." The cooled SPM is discharged to a first waste liquid facility in the factory where the substrate processing apparatus 100 is installed.

[0110] Specifically, used SPM flows into the cooling unit 800 from each tower TW described with reference to Fig. 1. Fig. 2 illustrates an example of the drainage pipe 301a of the first tower TW1. The drainage pipe 301a of the first tower TW1 discharges used SPM from the three processing chambers 101a included in the first tower TW1.

[0111] 2, used SPM discharged from the three processing chambers 101a included in the first tower TW1 flows into the cooling unit 800 via the drainage pipes 301a. In other words, the drainage pipes 301a discharge used SPM from the first tower TW1 to the cooling unit 800. The cooling unit 800 cools the used SPM discharged from each tower TW (each processing chamber 101a).

[0112] The drain tank 400A is disposed outside the processing chamber 101a. The drain tank 400A is located below the processing chamber 101a. The drain pipe 401a is a tubular member through which the processing liquid flows. One end of the drain pipe 401a is connected to the bottom of the second cup portion 722. Like the drain pipe 301a, the drain pipe 401a guides used SC1 and used rinse liquid to the drain tank 400A. Therefore, used SC1 and used rinse liquid are stored in the drain tank 400A. The SC1 and rinse liquid stored in the drain tank 400A are discharged to a second waste liquid facility in the factory where the substrate processing apparatus 100 is installed.

[0113] The drain tank 400A is provided for each tower TW described with reference to Fig. 1. Therefore, used SC1 and used rinse liquid discharged from the three processing chambers 101a included in the corresponding tower TW flow into one drain tank 400A.

[0114] Next, the process executed by the control unit 103 will be described with reference to Figures 1 to 3. Figure 3 is a diagram showing the flow of the process executed by the control unit 103 included in the substrate processing apparatus 100 of this embodiment. The process shown in Figure 3 starts when the center robot CR loads a substrate W into the processing chamber 101a.

[0115] 3 starts, the control unit 103 causes the substrate holding unit 3 to hold the substrate W horizontally (step S1). More specifically, the control unit 103 controls the center robot CR to place the substrate W on the plurality of chuck members 32, and then causes the center robot CR to exit the processing chamber 101a. Once the substrate W is placed on the plurality of chuck members 32, the control unit 103 causes the plurality of chuck members 32 to clamp the substrate W. As a result, the substrate W is held by the substrate holding unit 3.

[0116] After causing the substrate W to be held by the substrate holder 3, the control unit 103 controls the substrate rotator 4 to rotate the substrate W and the substrate holder 3 together. After the control unit 103 retreats the center robot CR from the processing chamber 101a, the control unit 103 controls the liquid receiver moving unit 75 to move the first guard unit 711, the second guard unit 721, and the third guard unit 73 from the first lower position, the second lower position, and the third lower position to the first upper position, the second upper position, and the third upper position, respectively. The control unit 103 also controls the first nozzle moving unit 6a to move the first nozzle 51a from the first retreat position to the processing position.

[0117] When the rotation speed of the substrate W reaches a predetermined rotation speed, the control unit 103 executes SPM processing (step S2). Specifically, the control unit 103 transitions the first processing liquid on-off valve 531 and the second processing liquid on-off valve 532 from a closed state to an open state. As a result, SPM is discharged from the first nozzle 51a toward the rotating substrate W held by the substrate holder 3, and a liquid film of SPM is formed on the upper surface of the substrate W. The SPM discharged from the rotating substrate W is received by the first liquid receiver 71 and then discharged to the cooling unit 800.

[0118] When a predetermined time has elapsed since the start of the discharge of SPM, the control unit 103 transitions the second processing liquid on-off valve 532 from the open state to the closed state. As a result, hydrogen peroxide solution is discharged from the first nozzle 51a toward the rotating substrate W held by the substrate holder 3, and a liquid film of hydrogen peroxide solution is formed on the upper surface of the substrate W. The control unit 103 also moves the first guard unit 711 from the first upper position to the first lower position. As a result, the hydrogen peroxide solution discharged from the rotating substrate W is received by the second liquid receiver 72 and then discharged into the drain tank 400A.

[0119] When a predetermined time has elapsed since the start of the discharge of the hydrogen peroxide solution, the control unit 103 executes a first rinse process (step S3). The first rinse process refers to a process of supplying hot water to the substrate W.

[0120] Specifically, the control unit 103 transitions the first processing liquid on-off valve 531 from an open state to a closed state, thereby stopping the discharge of hydrogen peroxide solution from the first nozzle 51a. The control unit 103 also controls the first nozzle moving unit 6a to move the first nozzle 51a from the processing position to the first retracted position, and controls the third nozzle moving unit 6c to move the third nozzle 51c from the third retracted position to the processing position. The control unit 103 then transitions the fourth processing liquid on-off valve 534 from a closed state to an open state, thereby discharging warm water from the third nozzle 51c toward the rotating substrate W held by the substrate holder 3. As a result, a liquid film of warm water (rinse liquid) is formed on the upper surface of the substrate W. The warm water (rinse liquid) discharged from the rotating substrate W is received by the second liquid receiving unit 72 and then discharged into the drain tank 400A.

[0121] When a predetermined time has elapsed since the start of the discharge of hot water, the control unit 103 executes the SC1 process (step S4).

[0122] Specifically, the control unit 103 transitions the fourth processing liquid on-off valve 534 from an open state to a closed state, thereby stopping the discharge of warm water (rinse liquid) from the third nozzle 51c. The control unit 103 also controls the third nozzle moving unit 6c to move the third nozzle 51c from the processing position to the third retracted position, while controlling the second nozzle moving unit 6b to move the second nozzle 51b from the second retracted position to the processing position. The control unit 103 then transitions the third processing liquid on-off valve 533 from a closed state to an open state, thereby discharging SC1 from the second nozzle 51b toward the rotating substrate W held by the substrate holder 3. As a result, a liquid film of SC1 is formed on the upper surface of the substrate W. The SC1 discharged from the rotating substrate W is received by the second liquid receiving unit 72 and then discharged into the drain tank 400A.

[0123] When a predetermined time has elapsed since the start of the discharge of SC1, the control unit 103 executes the second rinse process (step S5). The second rinse process refers to a process of supplying DIW at room temperature onto the substrate W.

[0124] Specifically, the control unit 103 transitions the third processing liquid on-off valve 533 from an open state to a closed state, thereby stopping the discharge of SC1 from the second nozzle 51b. The control unit 103 also controls the second nozzle moving unit 6b to move the second nozzle 51b from the processing position to the second retracted position, while controlling the third nozzle moving unit 6c to move the third nozzle 51c from the third retracted position to the processing position. The control unit 103 then transitions the fifth processing liquid on-off valve 535 from a closed state to an open state, thereby discharging room-temperature DIW from the third nozzle 51c toward the rotating substrate W held by the substrate holder 3. As a result, a liquid film of DIW (rinse liquid) is formed on the upper surface of the substrate W. The DIW (rinse liquid) discharged from the rotating substrate W is received by the second liquid receiving unit 72 and then discharged into the drain tank 400A.

[0125] When a predetermined time has elapsed since the start of discharge of the room-temperature DIW, the control unit 103 transitions the fifth processing liquid on-off valve 535 from an open state to a closed state to stop the discharge of DIW from the third nozzle 51c, and then performs a drying process to dry the substrate W (step S6). Specifically, the control unit 103 controls the substrate rotation unit 4 to increase the rotation speed of the substrate W. As a result, the substrate W is dried. The DIW (rinse liquid) discharged from the rotating substrate W is received by the second liquid receiving unit 72 and then discharged into the drain tank 400A. Furthermore, after stopping the discharge of DIW from the third nozzle 51c, the control unit 103 controls the third nozzle moving unit 6c to move the third nozzle 51c from the processing position to the third retracted position.

[0126] When a predetermined time has elapsed since increasing the rotation speed of the substrate W, the control unit 103 controls the substrate rotation unit 4 to stop the rotation of the substrate W, and then unloads the processed substrate W from the processing chamber 101a (step S7). As a result, the processing shown in FIG. 3 is completed.

[0127] Specifically, when the control unit 103 stops the rotation of the substrate W, it controls the liquid receiver moving unit 75 to move the second guard unit 721 and the third guard unit 73 from the second upper position and the third upper position to the second lower position and the third lower position, respectively. After moving the second guard unit 721 and the third guard unit 73, the control unit 103 controls the substrate holder 3 to release its hold on the substrate W. Then, the control unit 103 controls the center robot CR to transport the substrate W out of the processing chamber 101a.

[0128] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 4. Fig. 4 is a diagram showing a part of the configuration of the substrate processing apparatus 100 of this embodiment. In detail, Fig. 4 shows the hot water unit 200, the hot water circulation line 22, and the first tower TW1.

[0129] As shown in FIG. 4, the substrate processing apparatus 100 of this embodiment further includes a hot water unit 200 and a hot water circulation line 22.

[0130] The hot water unit 200 adjusts the temperature of the liquid to be heated, which is a liquid contained in the rinse liquid (second processing liquid) that has a temperature higher than room temperature. The hot water unit 200 is an example of a "temperature adjustment unit." As already explained, in this embodiment, the rinse liquid is water such as pure water. Therefore, the liquid to be heated is water such as pure water. More specifically, the liquid to be heated is DIW. The hot water unit 200 adjusts the temperature of the DIW to generate hot water. More specifically, the hot water unit 200 heats the temperature of the DIW to a processing temperature (target temperature). The hot water unit 200 is an example of a "heating unit."

[0131] The hot water circulation line 22 circulates the hot water generated by the hot water unit 200. Specifically, the hot water circulation line 22 includes a hot water common pipe 23, a first hot water circulation pipe 23a, a second hot water circulation pipe 23b, a third hot water circulation pipe 23c, a fourth hot water circulation pipe 23d, a hot water circulation pump 24, a first heater 25, a first hot water filter 26a, a second hot water filter 26b, a third hot water filter 26c, and a fourth hot water filter 26d. The hot water unit 200 has a hot water tank 21. The hot water common pipe 23, portions of the first hot water circulation pipe 23a to the fourth hot water circulation pipe 23d, the hot water circulation pump 24, the first heater 25, the first hot water filters 26a to the fourth hot water filter 26d, and the hot water tank 21 are housed in the hot water unit 200.

[0132] The hot water tank 21 stores the DIW. The hot water circulation line 22 circulates the DIW through the hot water tank 21.

[0133] Specifically, the common hot water pipe 23, the first hot water circulation pipe 23a, the second hot water circulation pipe 23b, the third hot water circulation pipe 23c, and the fourth hot water circulation pipe 23d are tubular members through which the treatment liquid flows. One end of the common hot water pipe 23 is connected to the hot water tank 21 and communicates with the inner space of the hot water tank 21. The hot water circulation pump 24 and the first heater 25 are provided in the common hot water pipe 23. Specifically, the hot water circulation pump 24 is provided downstream of the first heater 25. One end of the first hot water circulation pipe 23a, the second hot water circulation pipe 23b, the third hot water circulation pipe 23c, and the fourth hot water circulation pipe 23d is connected to the other end of the common hot water pipe 23 and communicates with the common hot water pipe 23. The other ends of the first hot water circulation pipe 23a, the second hot water circulation pipe 23b, the third hot water circulation pipe 23c, and the fourth hot water circulation pipe 23d are connected to the hot water tank 21 and communicate with the inner space of the hot water tank 21.

[0134] The hot water circulation pump 24 pumps the DIW in the common hot water pipe 23 toward one end of each of the first to fourth hot water circulation pipes 23a to 23d. Therefore, when the hot water circulation pump 24 is driven, the DIW in the hot water tank 21 flows into one end of each of the first to fourth hot water circulation pipes 23a to 23d via the common hot water pipe 23. The operation of the hot water circulation pump 24 is controlled by the control unit 103.

[0135] The first heater 25 adjusts the temperature of the DIW flowing through the common hot water pipe 23 to a processing temperature. Specifically, the first heater 25 adjusts the temperature of the DIW to convert it into hot water. Therefore, hot water flows into the first hot water circulation pipe 23a, the second hot water circulation pipe 23b, the third hot water circulation pipe 23c, and the fourth hot water circulation pipe 23d. The hot water flowing through the first hot water circulation pipe 23a, the second hot water circulation pipe 23b, the third hot water circulation pipe 23c, and the fourth hot water circulation pipe 23d is returned to the hot water tank 21 from the other end of each of the first hot water circulation pipe 23a, the second hot water circulation pipe 23b, the third hot water circulation pipe 23c, and the fourth hot water circulation pipe 23d. The first heater 25 is controlled by the control unit 103.

[0136] The first hot water filter 26a, the second hot water filter 26b, the third hot water filter 26c, and the fourth hot water filter 26d are provided in the first hot water circulation pipe 23a, the second hot water circulation pipe 23b, the third hot water circulation pipe 23c, and the fourth hot water circulation pipe 23d, respectively. The first hot water filter 26a removes foreign matter from the hot water flowing through the first hot water circulation pipe 23a. Similarly, the second hot water filter 26b to the fourth hot water filter 26d remove foreign matter from the hot water flowing through the second hot water circulation pipe 23b to the fourth hot water circulation pipe 23d, respectively.

[0137] The first hot water circulation pipe 23a, the second hot water circulation pipe 23b, the third hot water circulation pipe 23c, and the fourth hot water circulation pipe 23d correspond to the first tower TW1, the second tower TW2, the third tower TW3, and the fourth tower TW4, respectively. Figure 4 illustrates the first tower TW1 and the first hot water circulation pipe 23a.

[0138] 4, the third processing liquid supply unit 5c included in each of the three substrate processing units 101 forming the first tower TW1 is supplied with hot water from the first hot water circulation pipe 23a. Specifically, the other end of the fourth processing liquid pipe 524 included in each of the third processing liquid supply units 5c is connected to the first hot water circulation pipe 23a. Therefore, the third processing liquid supply unit 5c supplies the DIW, the temperature of which has been adjusted by the hot water unit 200, to the substrate W. Specifically, the third processing liquid supply unit 5c supplies the DIW (hot water) whose temperature has been increased by the hot water unit 200 to the substrate W.

[0139] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 5. Fig. 5 is a diagram showing the configuration of a second processing liquid supply unit 5b included in the substrate processing apparatus 100 of this embodiment.

[0140] As shown in FIG. 5, the second treatment liquid supply unit 5b includes, in addition to the second nozzle 51b, the third treatment liquid pipe 523, and the third treatment liquid on-off valve 533, a mixer 54, a first upstream pipe 523a, a second upstream pipe 523b, a third upstream pipe 523c, a first upstream on-off valve 533a, a second upstream on-off valve 533b, and a third upstream on-off valve 533c.

[0141] The first to third upstream pipes 523a to 523c are each a tubular member through which a treatment liquid flows. One end (downstream end) of each of the first to third upstream pipes 523a to 523c is connected to the mixer 54. The first upstream pipe 523a flows the ammonia water to the mixer 54. The second upstream pipe 523b flows the hydrogen peroxide water to the mixer 54. The third upstream pipe 523c flows the hot water to the mixer 54. Specifically, the other end (upstream end) of the third upstream pipe 523c is connected to a corresponding one of the first to fourth hot water circulation pipes 23a to 23d described with reference to FIG. 4. Alternatively, the other end of the third upstream pipe 523c may be connected to the corresponding fourth treatment liquid pipe 524.

[0142] The first upstream on-off valve 533a, the second upstream on-off valve 533b, and the third upstream on-off valve 533c are provided in the first upstream pipe 523a, the second upstream pipe 523b, and the third upstream pipe 523c, respectively. Note that the configurations of the first upstream on-off valve 533a, the second upstream on-off valve 533b, and the third upstream on-off valve 533c are substantially the same as the first treatment liquid on-off valve 531 and the second treatment liquid on-off valve 532 described with reference to FIG. 2, and therefore detailed description thereof will be omitted.

[0143] When the first upstream on-off valve 533a, the second upstream on-off valve 533b, and the third upstream on-off valve 533c are opened, the ammonia water, the hydrogen peroxide water, and the hot water are supplied to the mixer 54. The mixer 54 has an internal flow path, and the ammonia water, the hydrogen peroxide water, and the hot water are mixed in the flow path inside the mixer 54 to generate SC1, which has a temperature higher than room temperature. The other end (downstream end) of the third treatment liquid pipe 523 is connected to the mixer 54 and communicates with the flow path inside the mixer 54. As a result, SC1 is supplied to the third treatment liquid pipe 523. Here, the hot water contained in SC1 is an example of a "liquid to be heated."

[0144] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 6 to 8. Figure 6 is a diagram showing the configurations of a hot water supply line 11A, a hot water unit 200, and a cooling unit 800 included in the substrate processing apparatus 100 of this embodiment. First, the cooling unit 800 included in the substrate processing apparatus 100 of this embodiment will be described with reference to Figure 6.

[0145] 6, the substrate processing apparatus 100 further includes a drainage pipe 301b, a drainage pipe 301c, and a drainage pipe 301d. A portion of each of the drainage pipes 301a, 301b, 301c, and 301d is housed in a cooling unit 800.

[0146] 2, the drainage pipe 301a discharges used SPM from the first tower TW1 to the cooling unit 800. Similar to the drainage pipe 301a, the drainage pipes 301b to 301c discharge used SPM from the second tower TW2 to the fourth tower TW4 to the cooling unit 800, respectively.

[0147] 2, the cooling unit 800 cools used SPM discharged from each tower TW. Specifically, the cooling unit 800 includes a cooling tank 8, a heat exchanger 82, a buffer tank 83, a constant water level sensor 83a, a cooling circulation line 84, a refill line 9, a drain tank 400B, drainage pipes 402a and 402b, and a drainage pump 403. The cooling tank 8, the heat exchanger 82, the buffer tank 83, the constant water level sensor 83a, the cooling circulation line 84, the drain tank 400B, the drainage pipe 402a, a portion of the drainage pipe 402b, and the drainage pump 403 are housed within the cooling unit 800.

[0148] The cooling tank 8 stores used SPM (liquid to be cooled). The cooling tank 8 is an example of a "first tank." More specifically, the cooling tank 8 stores used SPM discharged from the first tower TW1 to the fourth tower TW4.

[0149] Specifically, used SPM discharged from the first tower TW1 flows into the cooling tank 8 via drainage pipe 301a. One end of drainage pipe 301b is connected to drainage pipe 301a. Used SPM discharged from the second tower TW2 flows from drainage pipe 301b into drainage pipe 301a and then flows into the cooling tank 8 via drainage pipe 301a. Used SPM discharged from the third tower TW3 flows into the cooling tank 8 via drainage pipe 301c. One end of drainage pipe 301d is connected to drainage pipe 301c. Used SPM discharged from the fourth tower TW4 flows from drainage pipe 301d into drainage pipe 301c and then flows into the cooling tank 8 via drainage pipe 301c.

[0150] The heat exchanger 82 is disposed in the cooling tank 8. The heat exchanger 82 cools the used SPM (liquid to be cooled) stored in the cooling tank 8 by circulating DIW (liquid to be heated) that has a lower temperature than the used SPM (liquid to be cooled). More specifically, the heat exchanger 82 has an internal flow path. As the DIW flows through the internal flow path of the heat exchanger 82, heat exchange occurs between the used SPM and the DIW. As a result, the used SPM (liquid to be cooled) is cooled and the DIW (liquid to be heated) is heated. For example, the heat exchanger 82 may include a tubular member through which the liquid (DIW) flows.

[0151] The refill line 9 supplies the buffer tank 83 with DIW (liquid to be heated) having a temperature lower than that of used SPM (liquid to be cooled). The buffer tank 83 stores DIW (liquid to be heated) having a temperature lower than that of used SPM (liquid to be cooled). Specifically, the refill line 9 receives DIW (liquid to be heated) at room temperature from a factory in which the substrate processing apparatus 100 is installed. The refill line 9 supplies the DIW (liquid to be heated) at room temperature to the buffer tank 83. The buffer tank 83 is an example of a "second tank." The refill line 9 is an example of a "second supply line."

[0152] According to this embodiment, it is only necessary to supply DIW at room temperature from the factory to the cooling unit 800, and there is no need to supply cooling water from the factory to the cooling unit 800. Therefore, the power required to cool the DIW can be reduced. Furthermore, according to this embodiment, the DIW heated by heat exchange with used SPM is used as the rinse liquid and SC1, so there is no need to cool the DIW heated by heat exchange with used SPM using factory equipment. Therefore, the power required to cool the DIW can be reduced.

[0153] The cooling circulation line 84 circulates DIW (liquid to be heated) between the heat exchanger 82 and the buffer tank 83. Specifically, the cooling circulation line 84 has a cooling upstream pipe 84a, a cooling downstream pipe 84b, a cooling circulation pump 85, and a circulation on-off valve 86A.

[0154] The cooling upstream pipe 84a and the cooling downstream pipe 84b are tubular members through which the liquid (DIW) flows. One end of the cooling upstream pipe 84a is connected to the buffer tank 83 and communicates with the internal space of the buffer tank 83. More specifically, one end of the cooling upstream pipe 84a is connected to the bottom wall of the buffer tank 83. The other end of the cooling upstream pipe 84a is connected to the inlet of the heat exchanger 82 and communicates with the internal flow path of the heat exchanger 82. One end of the cooling downstream pipe 84b is connected to the outlet of the heat exchanger 82 and communicates with the internal flow path of the heat exchanger 82. The other end of the cooling downstream pipe 84b is connected to the buffer tank 83 and communicates with the internal space of the buffer tank 83. For example, the other end of the cooling downstream pipe 84b may be located in the internal space of the buffer tank 83.

[0155] The circulation on-off valve 86A is provided in the cooling downstream pipe 84b. The circulation on-off valve 86A controls the inflow of DIW (liquid to be heated) from the cooling downstream pipe 84b to the buffer tank 83. Specifically, when the circulation on-off valve 86A opens, the DIW flows from the cooling downstream pipe 84b to the buffer tank 83. When the circulation on-off valve 86A closes, the inflow of DIW from the cooling downstream pipe 84b to the buffer tank 83 stops. Note that the configuration of the circulation on-off valve 86A is substantially the same as the first processing liquid on-off valve 531 and the second processing liquid on-off valve 532 described with reference to FIG. 2, and therefore a detailed description thereof will be omitted.

[0156] The cooling circulation pump 85 is provided in the cooling upstream pipe 84a. The cooling circulation pump 85 sends the DIW in the cooling upstream pipe 84a toward the inlet of the heat exchanger 82. Therefore, when the cooling circulation pump 85 is driven, the DIW stored in the buffer tank 83 flows into the internal flow path of the heat exchanger 82 via the cooling upstream pipe 84a. Then, the DIW that has passed through the internal flow path of the heat exchanger 82 flows into the cooling downstream pipe 84b. The cooling circulation pump 85 is controlled by the control unit 103.

[0157] When the circulation on-off valve 86A is open, the DIW (liquid to be heated) that has flowed into the cooling downstream pipe 84b flows into the buffer tank 83 via the cooling downstream pipe 84b. Therefore, when the circulation on-off valve 86A is open, the DIW (liquid to be heated) circulates between the heat exchanger 82 and the buffer tank 83. On the other hand, when the circulation on-off valve 86A is closed, the DIW (liquid to be heated) that has flowed into the cooling downstream pipe 84b flows into the hot water supply line 11A, which will be described later.

[0158] The constant water level sensor 83a detects whether the water level of the DIW (liquid to be heated) stored in the buffer tank 83 is at a predetermined level. The constant water level sensor 83a is an example of a "first water level sensor." The water level indicates the height of the liquid surface from the bottom surface of the buffer tank 83. For example, the constant water level sensor 83a may be configured to detect the water level using laser light. The control unit 103 controls the replenishment line 9 based on the detection result of the constant water level sensor 83a. Specifically, the constant water level sensor 83a outputs a signal indicating whether the water level of the DIW stored in the buffer tank 83 is at a predetermined level. The control unit 103 controls the replenishment line 9 based on the signal output from the constant water level sensor 83a.

[0159] Here, the first replenishment process executed by the control unit 103 will be described with reference to Fig. 6 and Fig. 7. Fig. 7 is a diagram showing the flow of the first replenishment process executed by the control unit 103 included in the substrate processing apparatus 100 of this embodiment. The first replenishment process shown in Fig. 7 may be repeated, for example, at predetermined intervals.

[0160] 7, when the control unit 103 starts the first refilling process, it determines whether the level of the DIW stored in the buffer tank 83 has changed from a predetermined level or higher to less than the predetermined level based on a signal output from the constant level sensor 83a (step S11). If the control unit 103 determines that the level of the DIW stored in the buffer tank 83 has changed from a predetermined level or higher to less than the predetermined level (Yes in step S11), it controls the refill line 9 to supply room temperature DIW from the refill line 9 to the buffer tank 83 (step S12). If the control unit 103 determines that the level of the DIW stored in the buffer tank 83 has not changed from a predetermined level or higher to less than the predetermined level (No in step S11), it ends the first refilling process shown in FIG.

[0161] After starting the supply (replenishment) of room temperature DIW to the buffer tank 83, the control unit 103 determines whether the level of the DIW stored in the buffer tank 83 has changed from below a predetermined level to above the predetermined level based on a signal output from the constant level sensor 83a (step S13). The control unit 103 repeats the determination in step S13 until the level of the DIW stored in the buffer tank 83 has changed from below the predetermined level to above the predetermined level (No in step S13).

[0162] In response to determining that the level of DIW stored in the buffer tank 83 has changed from below the predetermined level to above the predetermined level (Yes in step S13), the control unit 103 controls the refill line 9 to stop the supply of room temperature DIW from the refill line 9 to the buffer tank 83 (step S14). As a result, the first refill process shown in FIG. 7 ends.

[0163] 6, the replenishment line 9 includes a replenishment pipe 91 and a replenishment on-off valve 92. A portion of the replenishment pipe 91 and the replenishment on-off valve 92 are housed within the cooling unit 800.

[0164] The replenishment pipe 91 is a tubular member through which a liquid (DIW) flows. One end of the replenishment pipe 91 is connected to the buffer tank 83 and communicates with the inner space of the buffer tank 83. For example, one end of the replenishment pipe 91 may be located in the inner space of the buffer tank 83. DIW at room temperature is supplied to the replenishment pipe 91 from a factory in which the substrate processing apparatus 100 is installed.

[0165] The replenishment on-off valve 92 is provided in the replenishment pipe 91. The replenishment on-off valve 92 controls the flow of DIW (liquid to be heated) through the replenishment pipe 91 (replenishment line 9). Specifically, when the replenishment on-off valve 92 opens, the DIW (liquid to be heated) flows through the replenishment pipe 91 (replenishment line 9). When the replenishment on-off valve 92 closes, the flow of DIW (liquid to be heated) through the replenishment pipe 91 (replenishment line 9) stops. Note that the configuration of the replenishment on-off valve 92 is substantially the same as the first processing liquid on-off valve 531 and the second processing liquid on-off valve 532 described with reference to FIG. 2, and therefore a detailed description thereof will be omitted.

[0166] The control unit 103 controls the replenishment on-off valve 92 based on the detection result of the constant water level sensor 83a. Specifically, the control unit 103 transitions the replenishment on-off valve 92 from a closed state to an open state in response to determining that the water level of the DIW stored in the buffer tank 83 has changed from a predetermined water level or higher to below the predetermined water level. As a result, room temperature DIW is supplied to the buffer tank 83 from the replenishment piping 91 (replenishment line 9). Furthermore, the control unit 103 transitions the replenishment on-off valve 92 from an open state to a closed state in response to determining that the water level of the DIW stored in the buffer tank 83 has changed from below the predetermined water level to above the predetermined water level. As a result, the supply of room temperature DIW from the replenishment line 9 to the buffer tank 83 is stopped.

[0167] The drainage pipe 402a is a tubular member through which the processing liquid (SPM) flows. One end of the drainage pipe 402a is connected to the bottom wall of the cooling tank 8 and communicates with the internal space of the cooling tank 8. The other end of the drainage pipe 402b is connected to the drain tank 400B and communicates with the internal space of the drain tank 400B. The drain tank 400B is located below the cooling tank 8.

[0168] SPM cooled by the heat exchanger 82 flows from the cooling tank 8 into the drainage pipe 402a. The SPM that flows out from the cooling tank 8 into the drainage pipe 402a flows into the drain tank 400B via the drainage pipe 402a. As a result, the SPM cooled by the heat exchanger 82 is stored in the drain tank 400B.

[0169] Specifically, the cooling tank 8 has a partition plate 81. The partition plate 81 is disposed in the internal space of the cooling tank 8. The partition plate 81 extends upward from the bottom wall of the cooling tank 8. The upper end of the partition plate 81 faces the ceiling wall of the cooling tank 8. The cooling tank 8 has a gap between the upper end of the partition plate 81 and the ceiling wall of the cooling tank 8. The partition plate 81 divides (separates) the internal space of the cooling tank 8 into a storage section 8a and a discharge section 8b. Used SPM discharged from the first tower TW1 to the fourth tower TW4 flows into the storage section 8a. The heat exchanger 82 is disposed in the storage section 8a and cools the SPM stored in the storage section 8a.

[0170] The water surface (water level) of the SPM stored in storage section 8a increases as used SPM is discharged from first tower TW1 to fourth tower TW4. When the water surface (water level) of the SPM stored in storage section 8a exceeds the upper end of partition plate 81, the SPM flows out from storage section 8a to discharge section 8b.

[0171] One end of the drainage pipe 402a is connected to the discharge part 8b. Therefore, the SPM that has flowed over the upper end of the partition plate 81 from the storage part 8a to the discharge part 8b flows into the drainage pipe 402a.

[0172] According to this embodiment, the used SPM is cooled by the heat exchanger 82 until it exceeds the upper end of the partition plate 81. Therefore, the used SPM can be cooled more reliably.

[0173] The drainage pipe 402b is a tubular member through which the processing liquid (SPM) flows. One end of the drainage pipe 402b is connected to the drain tank 400B and communicates with the internal space of the drain tank 400B. Therefore, the SPM stored in the drain tank 400B flows into the drainage pipe 402b. The drainage pipe 402b extends from the inside to the outside of the cooling unit 800. The drainage pump 403 is provided in the drainage pipe 402b. The drainage pump 403 is controlled by the control unit 103.

[0174] The drain pump 403 sends the SPM in the drain pipe 402b toward the outside of the cooling unit 800. Therefore, when the drain pump 403 is driven, the SPM in the drain tank 400B is discharged through the drain pipe 402b to the outside of the cooling unit 800. More specifically, the SPM in the drain tank 400B is discharged through the drain pipe 402b to a first waste liquid facility in a factory in which the substrate processing apparatus 100 is installed.

[0175] Next, the hot water supply line 11A included in the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 6. As shown in Fig. 6, the substrate processing apparatus 100 further includes a hot water supply line 11A.

[0176] The hot water supply line 11A supplies DIW (liquid to be heated) from the cooling unit 800 to the hot water unit 200. The hot water supply line 11A is an example of a "first supply line." More specifically, the hot water supply line 11A supplies the DIW (liquid to be heated) that has been circulated through the heat exchanger 82 and heated by used SPM (liquid to be cooled) to the hot water unit 200. The hot water unit 200 adjusts the temperature of the DIW (liquid to be heated) supplied to the hot water unit 200 via the hot water supply line 11A.

[0177] In this embodiment, the hot water supply line 11A branches off from the cooling circulation line 84. More specifically, the hot water supply line 11A includes a hot water supply pipe 111a and a hot water on-off valve 112. A portion of the hot water supply pipe 111a and the hot water on-off valve 112 are housed within the cooling unit 800.

[0178] The hot water supply pipe 111a is a tubular member through which a liquid (DIW) flows. One end of the hot water supply pipe 111a is connected to the cooling downstream pipe 84b and communicates with the cooling downstream pipe 84b. The circulation on-off valve 86A is provided on the cooling downstream pipe 84b downstream of a connection point P3 between the cooling downstream pipe 84b and the hot water supply pipe 111a. Therefore, when the circulation on-off valve 86A is closed, the DIW heated by the heat exchanger 82 flows from the cooling downstream pipe 84b into the hot water supply pipe 111a (hot water supply line 11A).

[0179] The hot water on / off valve 112 controls the flow of DIW (liquid to be heated) through the hot water supply pipe 111a. When the hot water on / off valve 112 is opened, the DIW (liquid to be heated) that has flowed from the cooling downstream pipe 84b into the hot water supply pipe 111a flows through the hot water supply pipe 111a. When the hot water on / off valve 112 is closed, the flow of DIW (liquid to be heated) through the hot water supply pipe 111a stops. Note that the configuration of the hot water on / off valve 112 is substantially similar to the first treatment liquid on / off valve 531 and the second treatment liquid on / off valve 532 described with reference to FIG. 2, and therefore a detailed description thereof will be omitted.

[0180] Next, the hot water unit 200 included in the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 6. As shown in Fig. 6, the hot water unit 200 further includes a hot water replenishment line 11B and a temperature sensor 115.

[0181] The hot water replenishment line 11B allows the DIW (liquid to be heated) supplied to the hot water unit 200 via the hot water supply line 11A to flow to the hot water tank 21. Therefore, the hot water tank 21 stores the DIW (liquid to be heated) supplied to the hot water unit 200 via the hot water supply line 11A. In other words, the hot water tank 21 stores the DIW (liquid to be heated) supplied from the cooling unit 800 to the hot water unit 200. The hot water tank 21 is an example of a "third tank."

[0182] Specifically, DIW (liquid to be heated) whose temperature has been increased by the heat exchanger 82 flows into the hot water replenishment line 11B via the hot water supply line 11A. The hot water replenishment line 11B circulates the DIW (liquid to be heated) whose temperature has been increased by the heat exchanger 82 to the hot water tank 21. Therefore, the hot water tank 21 stores the DIW (liquid to be heated) whose temperature has been increased by heat exchange with used SPM.

[0183] Specifically, the hot water replenishment line 11B includes a hot water replenishment pipe 111b, a second heater 113, and a replenishment filter 114.

[0184] The hot water replenishment pipe 111b is a tubular member through which a liquid (DIW) flows. One end of the hot water replenishment pipe 111b is connected to the other end (downstream end) of the hot water supply pipe 111a and communicates with the hot water supply pipe 111a. The other end of the hot water replenishment pipe 111b is connected to the hot water tank 21 and communicates with the inner space of the hot water tank 21. Therefore, DIW (liquid to be heated) heated by the heat exchanger 82 flows from the hot water supply pipe 111a to the hot water replenishment pipe 111b. The hot water replenishment pipe 111b circulates the DIW (liquid to be heated) supplied from the hot water supply pipe 111a to the hot water tank 21.

[0185] The refill filter 114 is provided in the hot water refill pipe 111b and removes foreign matter from the DIW flowing through the hot water refill pipe 111b.

[0186] The second heater 113 adjusts the temperature of the DIW (liquid to be heated) supplied from the cooling unit 800 to the hot water unit 200 via the hot water supply line 11A. The second heater 113 is an example of a "heater." Specifically, the second heater 113 is provided in the hot water replenishment pipe 111b and heats the DIW (liquid to be heated) flowing through the hot water replenishment pipe 111b to a treatment temperature (target temperature). Therefore, even if the temperature of the DIW (liquid to be heated) heated by the heat exchanger 82 is lower than the treatment temperature, the DIW (liquid to be heated) heated to the treatment temperature by the second heater 113 is stored in the hot water tank 21.

[0187] According to this embodiment, the second heater 113 heats the DIW (liquid to be heated) whose temperature has been raised by the heat exchanger 82. This reduces the load on the second heater 113. This reduces the power consumed by the second heater 113.

[0188] In this embodiment, the temperature sensor 115 detects the temperature of the DIW (liquid to be heated) supplied to the hot water unit 200 via the hot water supply line 11A, and the control unit 103 controls the second heater 113 based on the temperature detected by the temperature sensor 115.

[0189] Specifically, the temperature sensor 115 detects the temperature of the DIW flowing through the hot water replenishment pipe 111b upstream of the second heater 113. The temperature sensor 115 outputs a signal corresponding to the detected temperature. The control unit 103 receives the signal output from the temperature sensor 115.

[0190] Here, the heating process performed by the control unit 103 will be described with reference to Fig. 6 and Fig. 8. Fig. 8 is a diagram showing the flow of the heating process performed by the control unit 103 included in the substrate processing apparatus 100 of this embodiment. The heating process shown in Fig. 8 may be repeated, for example, at predetermined intervals.

[0191] 8, when the heating process starts, the control unit 103 determines the temperature of the DIW supplied from the cooling unit 800 to the hot water unit 200 based on a signal received from the temperature sensor 115 (step S21), and controls the output of the second heater 113 based on the determined temperature (step S22). As a result, the heating process shown in FIG. 8 ends. Specifically, the control unit 103 adjusts (changes) the temperature set in the second heater 113 based on the determined temperature. As a result, the temperature of the DIW flowing from the hot water refill pipe 111b into the hot water tank 21 is adjusted to the processing temperature.

[0192] According to this embodiment, the control unit 103 controls the output of the second heater 113 based on the temperature detected by the temperature sensor 115. Therefore, the power consumed by the second heater 113 can be further reduced.

[0193] The control unit 103 may control the first heater 25 in the same manner as the second heater 113. Specifically, the hot water unit 200 may further include a temperature sensor that detects the temperature of the DIW flowing through the hot water common pipe 23 upstream of the first heater 25. The control unit 103 may control the first heater 25 based on the temperature of the DIW flowing through the hot water common pipe 23.

[0194] Next, the cooling unit 800, the hot water supply line 11A, and the hot water unit 200 included in the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS. 6, 9(a), 9(b), and 10. FIG. 9(a) is a diagram showing a first state of the cooling unit 800, the hot water supply line 11A, and the hot water unit 200 included in the substrate processing apparatus 100 of this embodiment. FIG. 9(b) is a diagram showing a second state of the cooling unit 800, the hot water supply line 11A, and the hot water unit 200 included in the substrate processing apparatus 100 of this embodiment. FIG. 10 is a diagram showing the flow of a second replenishment process executed by the control unit 103 included in the substrate processing apparatus 100 of this embodiment. The second replenishment process shown in FIG. 10 may be repeated, for example, at predetermined intervals. Note that in FIGS. 9(a) and 9(b), for simplification of the drawings, some of the components of the cooling unit 800 and the hot water unit 200 are omitted.

[0195] As shown in FIGS. 6, 9(a) and 9(b), the hot water unit 200 further includes a constant water level sensor 21a and a refill water level sensor 21b.

[0196] The constant water level sensor 21a detects whether the water level of the DIW (liquid to be heated) stored in the hot water tank 21 is at a predetermined first water level. The replenishment water level sensor 21b detects whether the water level of the DIW (liquid to be heated) stored in the hot water tank 21 is at a predetermined second water level. Here, the first water level indicates a water level higher than the second water level. The replenishment water level sensor 21b is an example of a "second water level sensor." The configurations of the constant water level sensor 21a and the replenishment water level sensor 21b are substantially similar to that of the constant water level sensor 83a, and therefore detailed description thereof will be omitted.

[0197] The control unit 103 controls the supply of DIW (liquid to be heated) to the hot water unit 200 via the hot water supply line 11A based on the detection result of the refill water level sensor 21b. In this embodiment, the control unit 103 controls the supply of DIW to the hot water unit 200 via the hot water supply line 11A based on the detection result of the refill water level sensor 21b and the detection result of the constant water level sensor 21a. Specifically, the control unit 103 controls the circulation on-off valve 86A and the hot water on-off valve 112 based on the detection result of the refill water level sensor 21b and the detection result of the constant water level sensor 21a.

[0198] 10, the control unit 103 determines whether the level of the DIW stored in the hot water tank 21 has changed from the second level or higher to less than the second level based on the signal output from the refill water level sensor 21b (step S31). When the control unit 103 determines that the level of the DIW stored in the hot water tank 21 has changed from the second level or higher to less than the second level (Yes in step S31), the control unit 103 controls the circulation on-off valve 86A and the hot water on-off valve 112 to supply the DIW that has passed through the heat exchanger 82 from the cooling unit 800 to the hot water unit 200 (step S32).

[0199] Specifically, the control unit 103 transitions the circulation on-off valve 86A from an open state to a closed state, and transitions the hot water on-off valve 112 from a closed state to an open state. As a result, as shown in Fig. 9(b), the DIW that has passed through the heat exchanger 82 is supplied from the hot water supply line 11A to the hot water replenishment line 11B, and the DIW that has passed through the heat exchanger 82 is replenished in the hot water tank 21.

[0200] On the other hand, if the control unit 103 determines that the water level of the DIW stored in the hot water tank 21 has not changed from above the second water level to below the second water level (No in step S31), it terminates the second replenishment process shown in Figure 10.

[0201] When the supply of DIW from the cooling unit 800 to the hot water unit 200 is started, the control unit 103 determines whether the level of the DIW stored in the hot water tank 21 has changed from below the first level to equal to or higher than the first level based on the signal output from the constant water level sensor 21a (step S33). The control unit 103 repeats the determination of step S33 until the level of the DIW stored in the hot water tank 21 has changed from below the first level to equal to or higher than the first level (No in step S33).

[0202] In response to determining that the water level of the DIW stored in the hot water tank 21 has changed from below the first water level to the second water level or higher (Yes in step S33), the control unit 103 stops the supply of DIW from the hot water supply line 11A to the hot water unit 200 (step S34). As a result, the second refill process shown in FIG. 10 ends.

[0203] Specifically, the control unit 103 transitions the circulation on-off valve 86A from a closed state to an open state, and transitions the hot water on-off valve 112 from an open state to a closed state. As a result, as shown in Fig. 9(a), the supply of DIW from the hot water supply line 11A to the hot water replenishment line 11B is stopped, and the replenishment of DIW to the hot water tank 21 is stopped.

[0204] 9(b), the DIW supplied from the buffer tank 83 to the heat exchanger 82 is supplied to the hot water supply line 11A without being returned to the buffer tank 83. Therefore, the water level in the buffer tank 83 drops. As described with reference to FIG. 6, the control unit 103 transitions the replenishment on-off valve 92 from a closed state to an open state in response to determining that the water level of the DIW stored in the buffer tank 83 has changed from a predetermined water level or higher to a water level below the predetermined water level, and supplies room temperature DIW to the buffer tank 83.

[0205] 9(a), the DIW supplied from the buffer tank 83 to the heat exchanger 82 is returned to the buffer tank 83. Therefore, the water level in the buffer tank 83 does not decrease. In response to determining that the water level of the DIW stored in the buffer tank 83 has changed from below a predetermined water level to above the predetermined water level, the control unit 103 transitions the replenishment on-off valve 92 from an open state to a closed state, thereby stopping the supply of DIW from the replenishment line 9 to the buffer tank 83.

[0206] Next, a substrate processing method of this embodiment will be described with reference to Figures 1 to 14. Figure 11 is a diagram showing the substrate processing method of this embodiment. The substrate processing method shown in Figure 11 is performed by the substrate processing apparatus 100 described with reference to Figures 1 to 10. As shown in Figure 11, the substrate processing method of this embodiment includes steps S41 to S46.

[0207] First, SPM is supplied to the substrate W by the first processing liquid supply unit 5a (step S41). The SPM (liquid to be cooled) after being supplied to the substrate W is drained into the cooling tank 8 in the cooling unit 800 (step S42). Specifically, the used SPM discharged from the substrate W is received by the first liquid receiving unit 71. The used SPM received by the first liquid receiving unit 71 is drained into the cooling tank 8 via the drainage pipe 301a, the drainage pipe 301b, the drainage pipe 301c, or the drainage pipe 301d.

[0208] The used SPM (liquid to be cooled) stored in the cooling tank 8 is heat exchanged by the heat exchanger 82 with the DIW (liquid to be heated) that has a lower temperature than the used SPM (liquid to be cooled). As a result, the used SPM (liquid to be cooled) is cooled (step S43; cooling step). For example, the used SPM (liquid to be cooled) stored in the cooling tank 8 is cooled by the DIW (liquid to be heated) that circulates between the buffer tank 83 and the heat exchanger 82.

[0209] The DIW (liquid to be heated) whose temperature has been increased by heat exchange with used SPM (liquid to be cooled) is supplied from the cooling unit 800 to the hot water unit 200 (step S44; supply step). Specifically, the DIW (liquid to be heated) after passing through the heat exchanger 82 is supplied to the hot water unit 200 from the cooling circulation line 84 via the hot water supply line 11A. More specifically, the control unit 103 transitions the circulation on-off valve 86A from an open state to a closed state and transitions the hot water on-off valve 112 from a closed state to an open state based on the detection result of the replenishment water level sensor 21b. As a result, the DIW (liquid to be heated) after passing through the heat exchanger 82 is supplied to the hot water unit 200.

[0210] The hot water unit 200 adjusts the temperature of the DIW (liquid to be heated) supplied to the hot water unit 200 via the hot water supply line 11A (step S45). Specifically, the temperature of the DIW (liquid to be heated) supplied to the hot water unit 200 via the hot water supply line 11A is adjusted by the first heater 25 and the second heater 113.

[0211] Finally, the rinse liquid containing DIW (liquid to be heated) whose temperature has been adjusted by the hot water unit 200 is supplied onto the substrate W by the third processing liquid supply unit 5c (step S46).

[0212] FIG. 12 is a diagram showing the supply step (step S44) of FIG. 11. As shown in FIG. 12, the supply step (step S44) of FIG. 11 includes step S441. Specifically, in the supply step, the supply of DIW (liquid to be heated) from the cooling unit 800 to the hot water unit 200 is controlled based on the level of the DIW (liquid to be heated) stored in the hot water tank 21 (step S441). In more detail, as described with reference to FIGS. 6, 9(a), 9(b), and 10, the control unit 103 controls the circulation on-off valve 86A and the hot water on-off valve 112 based on the detection results of the refill water level sensor 21b and the constant water level sensor 21a.

[0213] Fig. 13 is a diagram showing a replenishment step included in the substrate processing method of the present embodiment. The substrate processing method of the present embodiment includes the replenishment step shown in Fig. 13. The replenishment step may be performed in parallel with the supply step (step S44) of Fig. 11, for example.

[0214] 13, the refilling process includes step S442. Specifically, in the refilling process, DIW having a temperature lower than that of the used SPM (DIW at room temperature) is supplied to the buffer tank 83 based on the water level of the DIW stored in the buffer tank 83 (step S442). The refilling process shown in FIG. 13 is executed by the control unit 103 included in the substrate processing apparatus 100. More specifically, as described with reference to FIGS. 6 and 7, the control unit 103 controls the refilling on-off valve 92 based on a signal output from the constant water level sensor 83a.

[0215] Fig. 14 is a diagram showing a heating step included in the substrate processing method of the present embodiment. The substrate processing method of the present embodiment includes the heating step shown in Fig. 14. The heating step may be performed in parallel with the supplying step (step S44) of Fig. 11, for example.

[0216] 14, the heating process includes step S443. Specifically, in the heating process, the second heater 113 is controlled based on the temperature of the DIW (liquid to be heated) supplied from the cooling unit 800 to the hot water unit 200 (step S443). The heating process shown in FIG. 14 is executed by the control unit 103 included in the substrate processing apparatus 100. More specifically, as described with reference to FIGS. 6 and 8, the control unit 103 controls the output of the second heater 113 based on the detection result of the temperature sensor 115.

[0217] As described above with reference to FIGS. 1 to 14, according to this embodiment, power consumption can be reduced. Therefore, the environmental load can be reduced. For example, according to this embodiment, the second heater 113 heats the DIW (liquid to be heated) whose temperature has been increased by the heat exchanger 82. Therefore, the load on the second heater 113 can be reduced. Therefore, the power consumed by the second heater 113 can be reduced.

[0218] [Embodiment 2] Next, a second embodiment of the present invention will be described with reference to Figures 15 to 17. However, differences from the first embodiment will be described, and a description of the same aspects as in the first embodiment will be omitted. The second embodiment differs from the first embodiment in that the flow rate of DIW (liquid to be heated) supplied from the cooling unit 800 to the hot water unit 200 is controlled.

[0219] 15 is a diagram showing the configurations of a hot water supply line 11A, a hot water unit 200, and a cooling unit 800 included in the substrate processing apparatus 100 of embodiment 2. As shown in FIG. 15, the hot water replenishment line 11B included in the substrate processing apparatus 100 of embodiment 2 further includes a flow control valve 116 and a flow sensor 117.

[0220] The flow control valve 116 is provided in the hot water replenishment pipe 111b (hot water replenishment line 11B) upstream of the second heater 113, and controls the flow rate of DIW (liquid to be heated) supplied to the hot water unit 200 via the hot water supply line 11A. In other words, the flow control valve 116 controls the flow rate of DIW (liquid to be heated) supplied from the cooling unit 800 to the hot water unit 200. The flow control valve 116 is an example of a "flow rate control unit." The flow control valve 116 is, for example, a motor needle valve.

[0221] The flow rate sensor 117 is provided in the hot water replenishment pipe 111b (hot water replenishment line 11B) downstream of the flow rate control valve 116 and upstream of the second heater 113. Specifically, the flow rate sensor 117 is provided between the second heater 113 and the replenishment filter 114. The flow rate sensor 117 detects the flow rate of DIW flowing through the hot water replenishment pipe 111b (hot water replenishment line 11B). The flow rate detected by the flow rate sensor 117 indicates the amount of DIW flowing through the hot water replenishment pipe 111b per unit time.

[0222] The control unit 103 controls the flow control valve 116 based on the temperature detected by the temperature sensor 115 .

[0223] Fig. 16 is a diagram showing the flow of a flow rate control process executed by the control unit 103 included in the substrate processing apparatus 100 of embodiment 2. The flow rate control process shown in Fig. 16 may be repeated, for example, at predetermined intervals.

[0224] 16, when the control unit 103 starts the flow rate control process, it determines the temperature of the DIW supplied from the cooling unit 800 to the hot water unit 200 based on a signal received from the temperature sensor 115 (step S51), and controls the flow rate control valve 116 based on the determined temperature (step S52). As a result, the flow rate control process shown in FIG. 16 ends. In detail, the control unit 103 adjusts (changes) the target flow rate based on the determined temperature, and controls the flow rate control valve 116 based on the flow rate detected by the flow rate sensor 117 and the target flow rate so that the flow rate of the DIW flowing through the hot water replenishment pipe 111b (hot water replenishment line 11B) becomes the target flow rate.

[0225] Specifically, when the temperature of the DIW is equal to or lower than a first temperature, the control unit 103 controls the flow control valve 116 to reduce the flow rate of the DIW flowing through the hot water replenishment pipe 111b (hot water replenishment line 11B). When the temperature of the DIW is equal to or higher than a second temperature, the control unit 103 controls the flow control valve 116 to increase the flow rate of the DIW flowing through the hot water replenishment pipe 111b (hot water replenishment line 11B). The second temperature indicates a temperature higher than the first temperature.

[0226] When the temperature of the DIW is equal to or lower than the first temperature, the difference between the temperature of the DIW and the processing temperature (target temperature) is large. Therefore, when the flow rate of the DIW is high, there is a possibility that the second heater 113 will not be able to raise the temperature of the DIW to the processing temperature (target temperature). In contrast, according to this embodiment, when the temperature of the DIW is equal to or lower than the first temperature, the flow rate of the DIW is reduced. As a result, it is possible to reduce the possibility that the temperature of the DIW will not rise to the processing temperature (target temperature).

[0227] Furthermore, when the temperature of the DIW is equal to or higher than the second temperature, the difference between the temperature of the DIW and the processing temperature (target temperature) is small. Therefore, when the flow rate of the DIW is small, the second heater 113 may raise the temperature of the DIW to the processing temperature (target temperature) or higher. In contrast, according to this embodiment, when the temperature of the DIW is equal to or higher than the second temperature, the flow rate of the DIW is increased. As a result, the possibility that the temperature of the DIW will rise to the processing temperature (target temperature) or higher due to the second heater 113 can be reduced.

[0228] Fig. 17 is a diagram showing a heating step included in the substrate processing method of embodiment 2. The substrate processing method of embodiment 2 is performed by the substrate processing apparatus 100 described with reference to Figs. 15 and 16. The substrate processing method of embodiment 2 includes the heating step shown in Fig. 17. The heating step may be performed in parallel with the supplying step (step S44) of Fig. 11, for example.

[0229] 17, the heating process includes step S444. Specifically, in the heating process, the flow rate control valve 116 is controlled based on the temperature of the DIW (liquid to be heated) supplied from the cooling unit 800 to the hot water unit 200 (step S444). The heating process shown in FIG. 17 is executed by the control unit 103 included in the substrate processing apparatus 100. More specifically, as described with reference to FIGS. 15 and 16, the control unit 103 controls the flow rate control valve 116 based on the detection result of the temperature sensor 115.

[0230] The second embodiment of the present invention has been described above with reference to Figures 15 to 17. According to the second embodiment, power consumption can be reduced, as in the first embodiment, and therefore the environmental load can be reduced.

[0231] [Embodiment 3] Next, a third embodiment of the present invention will be described with reference to Figures 18 to 19(b). However, differences from the first and second embodiments will be described, and a description of the same aspects as the first and second embodiments will be omitted. The third embodiment differs from the first and second embodiments in the configurations of the cooling unit 800 and the hot water supply line 11A.

[0232] FIG. 18 is a diagram showing the configurations of a hot water supply line 11A, a hot water unit 200, and a cooling unit 800 included in a substrate processing apparatus 100 of the third embodiment.

[0233] 18, in the third embodiment, the refill line 9 supplies room-temperature DIW to the cooling upstream pipe 84a. Specifically, one end of the refill pipe 91 is connected to the cooling upstream pipe 84a.

[0234] Moreover, in the third embodiment, the cooling circulation line 84 has a circulation on-off valve 86B instead of the circulation on-off valve 86A. The circulation on-off valve 86B is provided in the cooling upstream pipe 84a. Specifically, the circulation on-off valve 86B is provided upstream of the cooling circulation pump 85. More specifically, the circulation on-off valve 86B is provided upstream of a connection point P4 between the refill pipe 91 and the cooling upstream pipe 84a.

[0235] In the third embodiment, the hot water supply line 11A supplies DIW (liquid to be heated) from the buffer tank 83 to the hot water unit 200. Specifically, one end of the hot water supply pipe 111a is connected to the bottom wall of the buffer tank 83 and communicates with the inner space of the buffer tank 83.

[0236] Moreover, in the third embodiment, the hot water supply line 11A further includes a liquid feed pump 118. The liquid feed pump 118 is provided in the hot water supply pipe 111a. The liquid feed pump 118 feeds DIW (liquid to be heated) from the buffer tank 83 toward the hot water unit 200. Therefore, when the liquid feed pump 118 is driven, the DIW stored in the buffer tank 83 is supplied to the hot water unit 200 (hot water replenishment line 11B) via the hot water supply pipe 111a (hot water supply line 11A). The liquid feed pump 118 is controlled by the control unit 103.

[0237] Next, the cooling unit 800, the hot water supply line 11A, and the hot water unit 200 included in the substrate processing apparatus 100 of embodiment 3 will be described with reference to FIGS. 18, 19(a), and 19(b). FIG. 19(a) is a diagram showing a first state of the cooling unit 800, the hot water supply line 11A, and the hot water unit 200 included in the substrate processing apparatus 100 of embodiment 3. FIG. 19(b) is a diagram showing a second state of the cooling unit 800, the hot water supply line 11A, and the hot water unit 200 included in the substrate processing apparatus 100 of embodiment 3. Note that in FIGS. 19(a) and 19(b), for simplification of the drawings, some of the configurations of the cooling unit 800 and the hot water unit 200 are omitted.

[0238] As in embodiment 1, when the control unit 103 determines that the water level of the DIW stored in the hot water tank 21 has changed from above the second water level to below the second water level, it controls the cooling circulation line 84 and the hot water supply line 11A to supply the DIW after passing through the heat exchanger 82 from the cooling unit 800 to the hot water unit 200.

[0239] In the third embodiment, in response to determining that the water level of DIW (liquid to be heated) stored in the hot water tank 21 has changed from equal to or higher than the second water level to less than the second water level, the control unit 103 transitions the circulation on-off valve 86B from an open state to a closed state and drives the liquid feed pump 118. As a result, as shown in Fig. 19(b), the DIW that has passed through the heat exchanger 82 and stored in the buffer tank 83 is supplied to the hot water unit 200 via the hot water supply line 11A.

[0240] 11 , DIW (liquid to be heated) is supplied from the buffer tank 83 to the hot water unit 200. More specifically, the liquid supply pump 118 supplies DIW (liquid to be heated) from the buffer tank 83 to the hot water unit 200.

[0241] In the third embodiment, in response to determining that the water level of the DIW stored in the hot water tank 21 has changed from below the first water level to the second water level or higher, the control unit 103 transitions the circulation on-off valve 86B from a closed state to an open state and stops the liquid feed pump 118. As a result, as shown in Fig. 19(a), the supply of DIW from the cooling unit 800 to the hot water unit 200 via the hot water supply line 11A is stopped.

[0242] 19(b), the DIW returned from the heat exchanger 82 to the buffer tank 83 is supplied to the hot water supply line 11A without being returned to the cooling upstream pipe 84a (cooling circulation line 84). Therefore, the water level in the buffer tank 83 drops. As described with reference to FIG. 6, the control unit 103 transitions the replenishment on-off valve 92 from the closed state to the open state in response to determining that the water level of the DIW stored in the buffer tank 83 has changed from a predetermined water level or higher to a water level below the predetermined water level. As a result, room-temperature DIW is supplied from the replenishment line 9 to the cooling upstream pipe 84a.

[0243] 19(a), the DIW stored in the buffer tank 83 circulates through the cooling circulation line 84. Therefore, the water level in the buffer tank 83 does not decrease. In response to determining that the water level of the DIW stored in the buffer tank 83 has changed from below a predetermined water level to above the predetermined water level, the control unit 103 transitions the replenishment on-off valve 92 from an open state to a closed state, thereby stopping the supply of DIW from the replenishment line 9 to the cooling circulation line 84.

[0244] The third embodiment of the present invention has been described above with reference to FIGS. 18 to 19(b). According to the third embodiment, power consumption can be reduced, as in the first and second embodiments. Therefore, the environmental load can be reduced. Furthermore, according to the third embodiment, the liquid feed pump 118 supplies DIW (liquid to be heated) from the cooling unit 800 to the hot water unit 200. Therefore, even if the pressure loss of the heat exchanger 82 is large, for example, the flow rate of DIW (liquid to be heated) supplied from the cooling unit 800 to the hot water unit 200 can be made more stable. However, the liquid feed pump 118 may be omitted.

[0245] The embodiments of the present invention have been described above with reference to the drawings (FIGS. 1 to 19(b)). However, the present invention is not limited to the above embodiments and can be embodied in various forms without departing from the spirit of the present invention. Furthermore, the components disclosed in the above embodiments can be modified as appropriate. For example, some of the components shown in one embodiment may be added to the components of another embodiment, or some of the components shown in one embodiment may be deleted from the embodiment.

[0246] The drawings mainly show each component in a schematic manner to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown in the drawings may differ from the actual ones due to the convenience of creating the drawings. Furthermore, the configuration of each component shown in the above embodiment is merely an example and is not particularly limited, and it goes without saying that various modifications are possible within a range that does not substantially deviate from the effects of the present invention.

[0247] 1 to 19(b), the drying process (step S6 in FIG. 3) is performed after the second rinsing process (step S5 in FIG. 3), but the replacement process may be performed between the second rinsing process and the drying process. The replacement process refers to a process of replacing the liquid film on the substrate W from the DIW liquid film with the IPA liquid film.

[0248] 1 to 19(b), the substrate W is dried by rotating it at high speed in the drying process (step S6 in FIG. 3), but the drying process is not limited to this. For example, the substrate processing apparatus 100 may be configured to dry the substrate W by spraying an inert gas onto the substrate W after the replacement process. Alternatively, the substrate processing apparatus 100 may be configured to dry the substrate W by changing the atmosphere around the substrate W to an inert gas atmosphere after the replacement process.

[0249] 1 to 19(b), the substrate holding unit 3 has a clamping chuck mechanism, but the substrate holding unit 3 is not limited to a clamping chuck mechanism. For example, the substrate holding unit 3 may have a vacuum chuck mechanism.

[0250] Furthermore, in the embodiment described with reference to Figures 1 to 19(b), SC1 was generated by the mixer 54, but for example, SC1 may be generated in a tank of a chemical cabinet provided in the substrate processing apparatus 100 by supplying ammonia water, hydrogen peroxide water, and DIW (hot water) to the tank.

[0251] 1 to 19(b), SPM is generated in a pipe, but SPM may also be generated, for example, in a nozzle. Specifically, sulfuric acid and hydrogen peroxide may be mixed in a nozzle. Alternatively, SPM may be generated on the substrate W. Specifically, sulfuric acid and hydrogen peroxide may be supplied to the upper surface of the substrate W, and the sulfuric acid and hydrogen peroxide may be mixed on the upper surface of the substrate W. In this case, the substrate processing unit 101 may have a nozzle that dispenses sulfuric acid onto the substrate W, and a nozzle that dispenses hydrogen peroxide onto the substrate W.

[0252] Furthermore, in the embodiment described with reference to Figures 1 to 19(b), the nozzle that ejects the rinse liquid is a scan nozzle, but the nozzle that ejects the rinse liquid may include a fixed nozzle and a nozzle provided on the blocking plate. [Industrial Applicability]

[0253] The present invention is useful in an apparatus and method for processing a substrate. [Explanation of symbols]

[0254] 5a: First processing liquid supply unit 5b: Second processing liquid supply unit 5c: Third processing liquid supply unit 8: Cooling tank 9: Refill line 11A: Hot water supply line 11B: Hot water refill line 21: Hot water tank 21a: Fixed water level sensor 21b: Refill water level sensor 25: 1st heater 82:Heat exchanger 83: Buffer tank 83a: Fixed water level sensor 84: Cooling circulation line 84a: Cooling upstream piping 84b: Cooling downstream piping 85: Cooling circulation pump 86A: Circulation on-off valve 86B: Circulation on-off valve 91: Replenishment piping 92: Refill valve 100: Substrate processing apparatus 103: Control unit 111a:Hot water supply piping 111b:Hot water replenishment piping 112: Hot water on-off valve 113: Second heater 115: Temperature sensor 116: Flow control valve 117: Flow sensor 118: Liquid transfer pump 200: Hot water unit 301a: Drainage pipe 301b: Drainage piping 301c: Drainage piping 301d: Drainage piping 800: Cooling unit W: Substrate

Claims

1. a first liquid supply unit that supplies a first processing liquid to the substrate; a second liquid supply unit that supplies a second processing liquid different from the first processing liquid to the substrate; a temperature adjustment unit that adjusts the temperature of a liquid to be heated that is contained in the second processing liquid; a cooling unit that cools the liquid to be cooled, which is the first processing liquid, after being supplied to the substrate; a first supply line for supplying the liquid to be heated from the cooling unit to the temperature adjustment unit; Equipped with The cooling unit comprises: a first tank that stores the liquid to be cooled; a heat exchanger that is disposed in the first tank and cools the liquid to be cooled stored in the first tank by circulating the liquid to be heated, the liquid having a lower temperature than the liquid to be cooled; and the first supply line supplies the liquid to be heated, which has been circulated through the heat exchanger and heated by the liquid to be cooled, to the temperature adjustment unit; the temperature adjustment unit adjusts the temperature of the liquid to be heated that is supplied to the temperature adjustment unit via the first supply line; The second liquid supply unit supplies the second processing liquid containing the temperature-raising liquid, the temperature of which has been adjusted by the temperature adjustment unit, to the substrate.

2. The cooling unit comprises: a second tank configured to store the liquid to be heated, the temperature of which is lower than that of the liquid to be cooled; a circulation line for circulating the liquid to be heated between the heat exchanger and the second tank; The substrate processing apparatus of claim 1 , further comprising:

3. The substrate processing apparatus according to claim 2 , wherein the first supply line branches off from the circulation line.

4. The substrate processing apparatus according to claim 2 , wherein the first supply line supplies the liquid to be heated from the second tank to the temperature adjustment unit.

5. The substrate processing apparatus according to claim 4 , wherein the first supply line includes a liquid feed pump that feeds the liquid to be heated from the second tank toward the temperature adjustment unit.

6. the cooling unit further includes a first water level sensor that detects whether the water level of the liquid to be heated stored in the second tank is at a predetermined water level; The substrate processing apparatus includes: a second supply line that supplies the liquid to be heated, which has a temperature lower than that of the liquid to be cooled, to the second tank; Control unit and Further provided with the second supply line includes an on-off valve that controls the flow of the temperature-raising target liquid through the second supply line; The substrate processing apparatus according to claim 2 , wherein the control unit controls the on-off valve based on a detection result of the first water level sensor.

7. The temperature adjustment unit is a heater for adjusting the temperature of the liquid to be heated, which is supplied to the temperature adjustment unit via the first supply line; a temperature sensor that detects the temperature of the liquid to be heated that is supplied to the temperature adjustment unit via the first supply line; and The substrate processing apparatus according to claim 1 , further comprising a control unit that controls the heater based on the temperature detected by the temperature sensor.

8. The temperature adjustment unit is a heater for adjusting the temperature of the liquid to be heated, which is supplied to the temperature adjustment unit via the first supply line; a temperature sensor that detects the temperature of the liquid to be heated that is supplied to the temperature adjustment unit via the first supply line; a flow rate control unit that is provided upstream of the heater and controls the flow rate of the liquid to be heated that is supplied to the temperature adjustment unit via the first supply line; and The substrate processing apparatus according to claim 1 , further comprising a control unit that controls the flow rate control unit based on the temperature detected by the temperature sensor.

9. The temperature adjustment unit is a third tank configured to store the liquid to be heated that is supplied to the temperature adjustment unit via the first supply line; a second water level sensor that detects whether the water level of the liquid to be heated stored in the third tank is at a predetermined water level; and The substrate processing apparatus according to any one of claims 1 to 5, further comprising a control unit that controls the supply of the liquid to be heated to the temperature adjustment unit via the first supply line based on the detection result of the second water level sensor.

10. The substrate processing apparatus according to claim 1 , wherein the first processing liquid contains sulfuric acid.

11. The substrate processing apparatus according to claim 1 , wherein the liquid to be heated includes water.

12. the second processing liquid includes a rinse liquid, The substrate processing apparatus according to claim 11 , wherein the rinse liquid contains only the liquid to be heated.

13. a third liquid supply unit that supplies a third processing liquid different from the first processing liquid and the second processing liquid to the substrate; The substrate processing apparatus according to claim 11 , wherein the third processing liquid contains ammonia water, hydrogen peroxide water, and the liquid to be heated after the temperature has been adjusted by the temperature adjustment unit.

14. supplying a first processing liquid to the substrate; a step of discharging the liquid to be cooled, which is the first processing liquid after being supplied to the substrate, into a first tank of a cooling unit; a cooling step of cooling the liquid to be cooled by exchanging heat between the liquid to be cooled stored in the first tank and a liquid to be heated, the liquid having a lower temperature than the liquid to be cooled; a supply step of supplying the liquid to be heated, the temperature of which has been increased by heat exchange with the liquid to be cooled, from the cooling unit to a temperature adjustment unit; adjusting the temperature of the liquid to be heated by the temperature adjustment unit; supplying a second processing liquid to the substrate, the second processing liquid being different from the first processing liquid; Including, The second processing liquid contains the liquid to be heated, the temperature of which has been adjusted by the temperature adjustment unit.

15. 15. The substrate processing method of claim 14, wherein in the cooling process, the liquid to be heated is circulated between a second tank that stores the liquid to be heated and a heat exchanger that performs heat exchange between the liquid to be cooled and the liquid to be heated.

16. The substrate processing method according to claim 15 , wherein in the supplying step, the liquid to be heated is supplied to the temperature adjustment unit from a circulation line that circulates the liquid to be heated between the second tank and the heat exchanger.

17. The substrate processing method according to claim 15 , wherein the supplying step supplies the temperature-raising liquid from the second tank to the temperature adjustment unit.

18. 18. The substrate processing method according to claim 17, wherein in the supplying step, the liquid to be heated is supplied from the second tank to the temperature adjustment unit by a liquid sending pump.

19. 19. The substrate processing method according to claim 15, further comprising a step of supplying the liquid to be heated, which has a lower temperature than the liquid to be cooled, to the second tank based on the water level of the liquid to be heated stored in the second tank.

20. the temperature adjustment unit has a heater that adjusts the temperature of the liquid to be heated that is supplied from the cooling unit to the temperature adjustment unit, 19. The substrate processing method according to claim 14, further comprising a step of controlling the heater based on the temperature of the liquid to be heated supplied from the cooling unit to the temperature adjustment unit.

21. The temperature adjustment unit is a heater that adjusts the temperature of the liquid to be heated, which is supplied from the cooling unit to the temperature adjustment unit; a flow rate control unit that is provided upstream of the heater and controls the flow rate of the liquid to be heated that is supplied from the cooling unit to the temperature adjustment unit; and The substrate processing method according to any one of claims 14 to 18, further comprising a step of controlling the flow rate control unit based on the temperature of the liquid to be heated supplied from the cooling unit to the temperature adjustment unit.

22. the temperature adjustment unit has a third tank that stores the liquid to be heated that is supplied from the cooling unit to the temperature adjustment unit, 19. The substrate processing method according to claim 14, further comprising a step of controlling the supply of the liquid to be heated from the cooling unit to the temperature adjustment unit based on the water level of the liquid to be heated stored in the third tank.

23. 19. The substrate processing method according to claim 14, wherein the first processing liquid contains sulfuric acid.

24. The substrate processing method according to claim 14 , wherein the liquid to be heated includes water.

25. the second processing liquid includes a rinse liquid, 25. The substrate processing method according to claim 24, wherein the rinse liquid contains only the liquid to be heated.

26. supplying a third processing liquid to the substrate, the third processing liquid being different from the first processing liquid and the second processing liquid; 25. The substrate processing method according to claim 24, wherein the third processing liquid contains ammonia water, hydrogen peroxide water, and the liquid to be heated, the temperature of which has been adjusted by the temperature adjustment unit.

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