Faceplate with edge flow control

Abstract

To provide a semiconductor processing chamber, a faceplate for a semiconductor processing chamber, and a semiconductor processing method for producing high quality devices and structures.SOLUTION: A chamber includes a gas box, a substrate support, and a blocker plate positioned between the gas box and the substrate support. The blocker plate includes a face plate 300 defining a plurality of apertures 330 therethrough and positioned between the blocker plate and the substrate support. The face plate is characterized by a first surface 305 facing the blocker plate and a second surface 310 opposite the first surface. The face plate and the second surface of the substrate support at least partially define a processing region within the semiconductor processing chamber. The face plate is characterized by a central axis 315 and defines a plurality of apertures therethrough and a plurality of recesses extending radially outward from the plurality of apertures, each recess extending from the second surface of the face plate to a depth less than the thickness of the face plate.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of and priority to U.S. patent application Ser. No. 16 / 856,878, filed April 23, 2020, entitled "FACEPLATE WITH EDGE FLOW CONTROL," the entire contents of which are incorporated herein by reference.

[0002]

[0002] The present technology relates to components and apparatus for semiconductor manufacturing. More particularly, the present technology relates to dispensing components of processing chambers and other semiconductor processing equipment. [Background technology]

[0003]

[0003] Integrated circuits are made possible by processes that create intricately patterned layers of material on substrate surfaces. Creating patterned materials on a substrate requires controlled methods for forming and removing material. Chamber components often deliver process gases to the substrate to deposit a film or remove material. To improve symmetry and uniformity, many chamber components may include regularly patterned features, such as apertures, to deliver material in a manner that may improve uniformity. However, this can limit the ability to tailor recipes for on-wafer adjustments.

[0004]

[0004] Therefore, there is a need for improved systems and methods that can be used to fabricate high quality devices and structures. These and other needs are addressed by the present technique. Summary of the Invention

[0005] An exemplary semiconductor processing chamber may include a gas box. The chamber may include a substrate support. The chamber may include a blocker plate positioned between the gas box and the substrate support. The blocker plate may define a plurality of apertures therethrough. The chamber may include a faceplate positioned between the blocker plate and the substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The second surface of the faceplate and the substrate support may at least partially define a processing region within the semiconductor processing chamber. The faceplate may be characterized by a central axis, and the faceplate may define a plurality of apertures therethrough. The faceplate may define a plurality of recesses extending radially outward from a center of the plurality of apertures. Each recess of the plurality of recesses may extend from the second surface of the faceplate to a depth less than the thickness of the faceplate.

[0006] In some embodiments, the faceplate may be substantially planar across a first surface of the faceplate in an annular region extending radially outward from the plurality of apertures. The chamber may include a power source configured to strike a plasma into a processing region of the semiconductor processing chamber. Each aperture of the plurality of apertures may include an aperture profile characterized by a first section extending from the first surface of the faceplate partially through the faceplate. The aperture may be further characterized by a second section extending from partially through the faceplate to a second surface of the faceplate. The first section may be characterized by a substantially cylindrical profile. The second section may include a conical or countersink profile. Each recess of the plurality of recesses may be characterized by a profile similar to the second section of the aperture profile of each aperture of the plurality of apertures. Each recess of the plurality of recesses may extend from the second surface of the faceplate to less than half the thickness of the faceplate.

[0007] Some embodiments of the present technology may include a faceplate for a semiconductor processing chamber. The faceplate may include a first surface and a second surface opposite the first surface. The faceplate may be characterized by a central axis extending through the first surface and the second surface. The faceplate may define a plurality of apertures through the faceplate. The faceplate may define a plurality of recesses extending radially outwardly about the plurality of apertures. Each recess of the plurality of recesses may extend from the second surface of the faceplate to a depth that is less than the thickness of the faceplate.

[0008] In some embodiments, the plurality of recesses may be distributed (distributed) as a set of rings extending outward from the central axis. A first subset of the set of rings may be characterized by the number of apertures in each corresponding ring by the formula: XR, where X is the base number of apertures and R is the corresponding ring number. A second subset of the set of rings radially inward of the first subset of the set of rings may be characterized by the number of apertures in the ring by the formula: (XR)+N, where N is the additional number of apertures. A third subset of the set of rings radially outward of the first subset of the set of rings may be characterized by the number of apertures in the ring by the formula: (XR)-N, where N is the additional number of apertures. Each aperture of the plurality of apertures may extend from the first surface of the face plate to the second surface of the face plate. The profile of each aperture may include a taper extending from the second surface of the face plate. The taper may extend partway through the depth of the face plate. The profile of each aperture may transition from a taper to a constriction. The profile of each aperture may transition from the constriction to a substantially cylindrical profile extending from the constriction to the first surface of the face plate. Each recess of the plurality of recesses may be characterized by a profile identical to the taper of the profile of each aperture of the plurality of apertures. The profile of each recess of the plurality of recesses may transition to a substantially cylindrical profile extending to a position less than the thickness of the face plate. Each recess of the plurality of recesses may be blocked from providing fluid access through the face plate at the first surface of the face plate. Each recess of the plurality of recesses may extend from the second surface of the face plate to less than half the thickness of the face plate.

[0009] Some embodiments of the present technology may include a method of semiconductor processing. The method may include flowing a precursor into a processing chamber. The processing chamber may include a faceplate and a substrate support on which a substrate is disposed. A processing region of the processing chamber may be at least partially defined between the faceplate and the substrate support. The faceplate may define a plurality of apertures through which the precursor flows. The faceplate may define a plurality of recesses extending radially outward from a center of the plurality of apertures. Each recess of the plurality of recesses may extend from a surface of the faceplate facing the substrate support to a depth less than the thickness of the faceplate. The method may include generating a plasma of the precursor within the processing region of the processing chamber. The method may include depositing a material on the substrate. In some embodiments, the deposited material may be characterized by a thickness near an edge of the substrate that is less than 5% thicker than a thickness near a center of the substrate. Each recess of the plurality of recesses may be characterized by a conical or countersunk profile.

[0010] The above techniques may provide numerous advantages over conventional systems and techniques. For example, embodiments of the present techniques may enable controlled deposition at the edge region of a substrate. Additionally, components may maintain plasma generation at the edge region, reducing the impact on plasma density and distribution. These and other embodiments, along with their many advantages and features, are described in more detail in conjunction with the following description and accompanying figures.

[0011] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings. [Brief explanation of the drawings]

[0012] [Figure 1] FIG. 1 illustrates a top view of an exemplary processing system in accordance with some embodiments of the present technique. [Figure 2] 1 is a schematic cross-sectional view illustrating an exemplary plasma system according to some embodiments of the present technique; [Figure 3] 1 is a schematic partial cross-sectional view illustrating an exemplary face plate according to some embodiments of the present technology; [Figure 4] 1A is a schematic bottom view of an exemplary face plate according to some embodiments of the present technology; FIG. 1B is a schematic top view of an exemplary face plate according to some embodiments of the present technology; [Figure 5] 10 is a chart showing aperture distribution in a face plate according to some embodiments of the present technology; [Figure 6] 1A-1D illustrate exemplary method steps for semiconductor processing in accordance with some embodiments of the present technique.

[0013]

[0019] Some of the figures are included as schematic diagrams. It should be understood that the figures are for illustrative purposes and should not be considered to scale unless the scale is explicitly stated. Furthermore, as schematic diagrams, the figures are provided to aid in understanding and may not include all aspects or information compared to realistic representations and may include exaggerated material for illustrative purposes.

[0014]

[0020] In the accompanying figures, similar components and / or features may be labeled with the same reference label. Furthermore, various components of the same type may be distinguished by following the reference label with a letter that distinguishes between the similar components. When only a first reference label is used herein, the description is applicable to any one of the similar components having the same first reference label, regardless of the letter. DETAILED DESCRIPTION OF THE INVENTION

[0015]

[0021] The plasma deposition process may apply a voltage to one or more constituent precursors to promote film formation on the substrate. Any number of material films may be created to form semiconductor structures, including conductive and dielectric films, as well as films to facilitate material transport and removal. For example, a hard mask film may be formed to facilitate substrate patterning while protecting underlying materials that would otherwise be preserved. In many processing chambers, multiple precursors may be mixed in a gas panel and delivered to a processing region of the chamber where a substrate may be placed. The precursors may be distributed through one or more components within the chamber, which may result in radial or lateral distribution of delivery, resulting in increased formation or removal at the substrate surface.

[0016]

[0022] As device feature sizes shrink, tolerances across the substrate surface decrease, and differences in material properties across the film can affect device realization and uniformity. Many chambers contain characteristic process signatures that can cause non-uniformity across the substrate. Temperature differences, flow pattern uniformity, and other aspects of processing can affect the film on the substrate, resulting in differences in film uniformity across the substrate for created or removed material. For example, one or more devices can be included within the processing chamber to deliver and distribute precursors within the processing chamber. A blocker plate can be included in the chamber to provide a restriction to the precursor flow, increasing the residence time and lateral or radial distribution of the precursor at the blocker plate. A face plate can further improve delivery uniformity to the processing region, improving deposition or etching.

[0017]

[0023] In some non-limiting examples of deposition processes, precursor flow rates can affect the process based on the film being formed. For example, some processes may actually decrease deposition rates by increasing the flow of some precursors, while other processes may increase deposition rates proportionally to increases in precursor flow rates over a wide range. As a result, to increase throughput, some deposition processes may be characterized by precursor delivery rates of about 5 L / min or more, about 7 L / min or more, or even about 10 L / min or more. To accommodate these increased flow rates, some blocker plate designs may be characterized by increasing conductance, such as by increasing the number or size of apertures, which may facilitate cleaning steps and allow for increased precursor delivery. However, this may affect the blocking function of the plate, and depending on the chamber inlet, precursor delivery may increase, such as with an increased center delivery. This flow profile may continue through the faceplate and into the processing region, resulting in increased deposition in the center region of the substrate, resulting in a center-peaked deposition profile. In some other processes, the deposition can be thicker at the edge regions, and adjusting the conductance of the blocker plate to improve the center flow can increase the center deposition and help improve this deposition pattern.

[0018]

[0024] The present technique overcomes these challenges during these higher dosage processes, and for any other process that may result in edge peak formation. By utilizing one or more chamber components that can modify the flow path through the processing chamber, control of film formation can be enhanced. Thus, the present technique can achieve improved film deposition, characterized by increased uniformity across the substrate surface.

[0019]

[0025] While the remainder of the disclosure will always identify specific deposition processes utilizing the disclosed technology, it will be readily understood that the systems and methods are equally applicable to other deposition and cleaning chambers and processes that may be performed in the described chambers. Accordingly, the present technology should not be considered limited to use with only these specific deposition processes or chambers. This disclosure describes one possible system and chamber that may include lid stack components according to embodiments of the present technology, before describing additional modifications and adaptations to this system according to embodiments of the present technology.

[0020]

[0026] FIG. 1 illustrates a top view of one embodiment of a deposition, etch, bake, and cure chamber processing system 100 according to an embodiment of the present technology. In the illustration, a pair of front-opening unified pods 102 deliver substrates of various sizes, which are received by a robotic arm 104 and placed in a low-pressure holding area 106 before being placed into one of the substrate processing chambers 108a-f positioned in tandem sections 109a-c. A second robotic arm 110 may be used to transport substrate wafers from the holding area 106 to the substrate processing chambers 108a-f and vice versa. Each substrate processing chamber 108a-f may be equipped to perform multiple substrate processing steps, including the formation of stacks of semiconductor materials as described herein, in addition to other substrate processes including plasma-enhanced chemical vapor deposition, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, alignment, and annealing, ashing, etc.

[0021]

[0027] The substrate processing chambers 108a-f may include one or more system components for depositing, annealing, curing, and / or etching a dielectric or other film on a substrate. In one configuration, two pairs of processing chambers, e.g., 108c-d and 108e-f, may be used to deposit a dielectric material on a substrate, and a third pair of processing chambers, e.g., 108a-b, may be used to etch the deposited dielectric. In another configuration, all three pairs of chambers, e.g., 108a-f, may be configured to deposit a stack of alternating dielectric films on a substrate. Any one or more of the described processes may be performed in separate chambers from the fabrication system shown in different embodiments. It will be understood that additional configurations of deposition, etching, annealing, and curing chambers for dielectric films are contemplated by system 100.

[0022]

[0028] 2 is a schematic cross-sectional view illustrating an exemplary plasma system 200 according to some embodiments of the present technique. The plasma system 200 may be installed in one or more of the tandem sections 109 described above and may illustrate a pair of processing chambers 108, which may include faceplates or other components or assemblies according to embodiments of the present technique, as further described below. The plasma system 200 may generally include a chamber body 202 having a sidewall 212, a bottom wall 216, and an interior sidewall 201 that defines a pair of processing regions 220A and 220B. Each of the processing regions 220A-220B may be similarly configured and may include identical components.

[0023]

[0029] For example, processing region 220B, which may also include components in processing region 220A, may include a pedestal 228 disposed in the processing region through a passageway 222 formed in the bottom wall 216 of plasma system 200. The pedestal 228 may provide a heater adapted to support a substrate 229 on an exposed surface of the pedestal, such as a body portion. The pedestal 228 may include a heating element 232, such as a resistive heating element, that may heat and control the substrate temperature to a desired process temperature. The pedestal 228 may also be heated by a remote heating element, such as a lamp assembly, or any other heating device.

[0024]

[0030] The body of the pedestal 228 may be coupled to the stem 226 by a flange 233. The stem 226 may electrically couple the pedestal 228 to a power outlet or power box 203. The power box 203 may include a drive system that controls the elevation and movement of the pedestal 228 within the processing region 220B. The stem 226 may also include a power interface for supplying power to the pedestal 228. The power box 203 may also include an interface for power and a temperature indicator, such as a thermocouple interface. The stem 226 may include a base assembly 238 adapted to detachably couple with the power box 203. A circumferential ring 235 is shown above the power box 203. In some embodiments, the circumferential ring 235 may be a shoulder adapted as a mechanical stop or land configured to provide a mechanical interface between the base assembly 238 and the top surface of the power box 203.

[0025]

[0031] A rod 230 may be included through a passage 224 formed in the bottom wall 216 of the processing region 220B and may be utilized to position substrate lift pins 261 disposed through the body of the pedestal 228. The substrate lift pins 261 may selectively space the substrate 229 from the pedestal to facilitate exchange of the substrate 229 with a robot utilized to transfer the substrate 229 into and out of the processing region 220B through the substrate transfer port 260.

[0026]

[0032] The chamber lid 204 may be coupled to the top of the chamber body 202. The lid 204 may house one or more precursor delivery systems 208 coupled thereto. The precursor delivery system 208 may include a precursor inlet passage 240 that may supply reactant and cleaning precursors into the processing region 220B through a gas supply assembly 218. The gas supply assembly 218 may include a gas box 248 having a blocker plate 244 disposed intermediate a faceplate 246. A radio frequency (“RF”) source 265 may be coupled to the gas supply assembly 218 and may provide power to the gas supply assembly 218 to facilitate generating a plasma region between the faceplate 246 of the gas supply assembly 218 and a pedestal 228, which may be the processing region of the chamber. In some embodiments, the RF source may be coupled to other portions of the chamber body 202, such as the pedestal 228, to facilitate plasma generation. A dielectric isolator 258 may be disposed between the lid 204 and the gas supply assembly 218 to prevent conduction of RF power to the lid 204. A shadow ring 206 may be disposed around the pedestal 228 to engage the pedestal 228.

[0027]

[0033] Optional cooling channels 247 may be formed in the gas box 248 of the gas distribution system 208 to cool the gas box 248 during processing. A heat transfer fluid, such as water, ethylene glycol, or gas, may be circulated through the cooling channels 247 so that the gas box 248 can be maintained at a predetermined temperature. A liner assembly 227 may be positioned within the processing region 220B proximate the sidewalls 201, 212 of the chamber body 202 to prevent exposure of the sidewalls 201, 212 to the processing environment within the processing region 220B. The liner assembly 227 may include a circumferential pumping cavity 225 that may be coupled to a pumping system 264 configured to exhaust gases and byproducts from the processing region 220B and control the pressure within the processing region 220B. A plurality of exhaust ports 231 may be formed in the liner assembly 227. The exhaust port 231 can be configured to allow gas flow from the processing region 220B to the circumferential pump cavity 225 in a manner that facilitates processing within the system 200.

[0028]

[0034] FIG. 3 is a schematic, partial cross-sectional view illustrating an exemplary face plate 300 according to some embodiments of the present technology. FIG. 3 may illustrate additional details related to components of system 200, such as face plate 246. It is understood that face plate 300, in some embodiments, may include any feature or aspect of system 200 previously described. Face plate 300 may be used to perform semiconductor processing steps, including the deposition of hard mask materials described above, as well as other deposition, removal, and cleaning steps. Face plate 300 depicts a partial view of a face plate that may be incorporated into a semiconductor processing system, may illustrate a view across the center of the face plate, and may be any other size and include any number of apertures. While illustrated with multiple apertures extending laterally or radially outward, it should be understood that the illustration is included merely as an illustration of an embodiment and should not be considered to scale. For example, exemplary faceplates can be characterized by about 20 or more apertures and / or a large number of apertures along the central diameter of the recess, and can be characterized by about 25 or more apertures, about 30 or more apertures, about 35 or more apertures, about 40 or more apertures, about 45 or more apertures, about 50 or more apertures, or more apertures, as further described below.

[0029]

[0035] As previously mentioned, face plate 300 may be included in any number of processing chambers, including system 200 described above. Face plate 300 may be included as part of a gas inlet assembly, along with a gas box, blocker plate, and the like. For example, a gas box may define or provide access into the processing chamber. A substrate support may be included within the chamber and configured to support a substrate during processing. A blocker plate may be included between the gas box and the substrate support of the chamber. The blocker plate may include or define multiple apertures extending therethrough. In some embodiments, the blocker plate may be characterized by an increased central conductance. For example, in some embodiments, a subset of apertures adjacent to or extending about a central region of the blocker plate may be characterized by a larger aperture diameter than apertures radially outward from the central region. This may increase central flow conductance in some embodiments. The components may include any of the features previously described for similar components, as well as various other variations also encompassed by the present technology.

[0030]

[0036] The face plate 300 may be positioned between a blocker plate and a substrate support within the chamber, as illustrated above. The face plate 300 may be characterized by a first surface 305 and a second surface 310, which may be opposite the first surface. In some embodiments, the first surface 305 may face toward a blocker plate, a gas box, or a gas inlet into the processing chamber. The second surface 310 may be positioned to face a substrate support or substrate within a processing region of the processing chamber. For example, in some embodiments, the face plate second surface 310 and the substrate support may at least partially define a processing region within the chamber. The face plate 300 may be characterized by a central axis 315, which extends vertically through a midpoint of the face plate and may be coaxial with a central axis through the processing chamber.

[0031]

[0037] The faceplate 300 may define a plurality of apertures 320 defined therethrough, extending from the first surface to the second surface. Each aperture 320 may provide a fluid path through the faceplate, and the apertures may provide fluid access to a processing region of the chamber. The faceplate 300 may define any number of apertures therethrough, for example, about 1,000 or more apertures, about 2,000 or more apertures, about 3,000 or more apertures, about 4,000 or more apertures, about 5,000 or more apertures, about 6,000 or more apertures, or more, depending on the size of the faceplate and the size of the apertures. As previously mentioned, the apertures may be included in a set of rings extending outward from the central axis, and as previously mentioned, may include any number of rings. The rings may be characterized by any number of shapes, including circular or elliptical, as well as any other geometric pattern, such as rectangular, hexagonal, or any other geometric pattern that may include apertures distributed in a radially outward number of rings. The apertures may be uniformly or staggered and may be spaced about 10 mm or less center-to-center. The apertures may also be spaced about 9 mm or less, about 8 mm or less, about 7 mm or less, about 6 mm or less, about 5 mm or less, about 4 mm or less, about 3 mm or less, or less apart.

[0032]

[0038] The rings may be characterized by any geometric shape as described above, and in some embodiments, the apertures may be characterized by a scaling function of the apertures per ring. For example, in some embodiments, the first aperture may extend through the center of the faceplate, such as along a central axis as illustrated. The first ring of apertures may extend about the central aperture and may include any number of apertures, such as about 4 to about 10 apertures, which may be equally spaced about a geometric shape extending through the center of each aperture. Any number of additional rings of apertures may extend radially outward from the first ring and may include a number of apertures that may be a function of the number of apertures in the first ring. For example, the number of apertures in each successive ring may be characterized by the number of apertures in each corresponding ring by the formula XR, where X is the base number of apertures and R is the corresponding ring number. The base number of apertures may be the number of apertures in the first ring, or in some embodiments, may be some other number when the first ring has an increased number of apertures, as described further below. For example, in an exemplary faceplate having five apertures distributed about the first ring, where five may be the base number of apertures, the second ring may be characterized by (5) x (2) = 10 apertures, the third ring may be characterized by (5) x (3) = 15 apertures, and the twentieth ring may be characterized by (5) x (20) = 100 apertures. This may continue for any number of rings of apertures, as previously described, such as up to, greater than, or about 50 rings. In some embodiments, each aperture of a plurality of apertures throughout the faceplate may be characterized by an aperture profile, which may be the same or different in embodiments of the present technology.

[0033]

[0039] The apertures may include any profile, as shown, or several sections with different profiles. In some embodiments, the faceplate may have at least two sections, at least three sections, at least four sections, at least five sections, or more sections that define different profiles through the aperture. In one illustrative, non-limiting example, each aperture of the plurality of apertures may include an aperture profile that includes at least three sections. For example, the first section 322 may extend from the first surface 305 of the faceplate and may extend partially through the faceplate. In some embodiments, the first section 322 may extend at least about half or more of the thickness of the faceplate between the first surface 305 and the second surface 310. The first section 322 may be characterized by a substantially cylindrical profile, as shown. By substantially, it is meant that the profile may be characterized by a cylindrical profile, but may take into account machining tolerances and part variations, as well as certain errors.

[0034]

[0040] The first section 322 may transition to an optional second section 324, which may act as a restriction in the faceplate and increase flow distribution or enhance uniformity. As shown, the section may include a taper from the first section 322 to a narrower diameter. The section may then flare to the third section 326. The third section 326 may extend from partially through the faceplate to the second surface 310. The third section 326 may extend, for example, less than halfway through the thickness of the faceplate, or up to or about halfway through the faceplate. The third section 326, in some embodiments, may be characterized by a tapered profile from the second surface and, if included, may extend to include a cylindrical portion that intersects the flare from the second section 324. The third section 326, in some embodiments, may be characterized by a conical profile or a countersink profile, among other tapered profiles.

[0035]

[0041] A central aperture 330 may be defined along a central axis, e.g., concentric with the central axis, and the aforementioned ring of apertures may extend around the central aperture 330. Additionally, a plurality of recesses 335 may extend radially outwardly of and around the plurality of apertures. Each recess of the plurality of recesses 335 may, in some embodiments, be a closed or blind hole and may not provide fluid access through the face plate. The recesses 335 may extend from the second surface of the face plate to a depth less than the thickness of the face plate. For example, each recess of the plurality of recesses may be characterized by a similar or identical profile to the third portion of each aperture of the plurality of apertures. Each recess may extend from the second surface of the face plate to less than half the thickness of the face plate. Each recess may be characterized by a taper from the second surface to a cylindrical portion or a partially terminating portion that extends through the face plate to a closed portion. The first surface 305 of the face plate may be substantially flat across the first surface in an annular region extending radially outward from the plurality of apertures, e.g., across an area where the recesses would otherwise extend through to the first surface. For example, none of the apertures for the radially outermost annular section from the first surface of the face plate may include a cylindrical portion.

[0036]

[0042] FIG. 4A is a schematic bottom view illustrating an exemplary face plate according to some embodiments of the present technology, e.g., a schematic illustrating a face plate 300 along a second surface 310, etc. As shown, the face plate 300 may include a plurality of apertures 320, which may be distributed in a set of rings extending radially outward along the face plate. For example, from a central aperture 330, a first ring of apertures including eight apertures extends about the central aperture. The next outer ring, e.g., a second ring, may include sixteen apertures extending about the first ring. This may follow the pattern described above for any number of rings as previously indicated. It should be understood that the illustration is for illustrative purposes only, and the included face plate may be characterized by hundreds or thousands of apertures as previously indicated, e.g., configured with any base number of apertures. The apertures 320 along the second surface 310 may represent, for example, a third section 326. All of the apertures may exemplify channels extending through the faceplate, except for the outer section of the faceplate, where recesses 335 may be located. Because the recesses 335 may not allow for fluid passage through the faceplate, the recesses may appear as blind holes or may be blocked. Although only a single set of recesses 335 is illustrated, the recesses 335 may include a pattern similar to a ring of apertures extending outward. For example, the recesses 335 may be located as a ring of apertures located beyond the outer radius of a substrate that may be positioned in a processing chamber.

[0037]

[0043] For example, the substrate may be characterized by any dimension, such as rectangular or elliptical. For a circular substrate characterized by a diameter of 300 mm, the radius of the substrate may be 150 mm. Apertures on the faceplate that would be contained more than 150 mm from the central axis may be converted to recesses in some embodiments of the present technology. It should be understood that similar modifications may be made to substrates of any other dimensions, such as 150 mm, 450 mm, 600 mm, etc. In some embodiments, the outermost ring or rings may be recesses instead of apertures. In some embodiments, apertures may be eliminated entirely, providing a flat surface extending from the outer edge of the substrate. As the cost of precursors for deposition processes continues to rise, reducing the amount of wasted precursors may become more important to reduce manufacturing costs.

[0038]

[0044] Maintaining proper plasma profile and deposition uniformity can be facilitated by extending deposition and flow patterns beyond the radial or lateral dimensions of the substrate being processed, but this material can be expelled from the system as waste. In this technique, the faceplate can be modified to accommodate or reduce this wasted material. By directing precursor flow to a volume at least partially constrained by the dimensions of the substrate, waste can be reduced.

[0039]

[0045] 4B is a schematic top view showing an exemplary face plate according to some embodiments of the present technology, and may illustrate a schematic view of the face plate 300, such as along the first surface 305. As shown, the face plate 300 may include a plurality of apertures 320, and may include thousands of apertures in face plates encompassed by the present technology. The apertures 320 along the first surface 305 may represent, for example, the first section 322. All of the apertures may represent channels extending through the face plate, except for the edge region of the face plate, where the recesses 335 may be located on the opposite side of the plate. As shown, in some embodiments, the outer region or annular region of the face plate on the first surface 305 may be blank and may be substantially planar or flat across the region. By including blank space in this region, flow through the outer edge region of the face plate may be better distributed radially to apertures located further inward.

[0040]

[0046] As previously mentioned, in some embodiments, face plate 300 may be included in a processing chamber configured to perform deposition, etching, or other process methods in which the edge profile may not be uniform. For example, in an exemplary deposition process, a substrate may be characterized by edge peak deposition, in which additional material may be deposited at outer or edge locations on the substrate. As discussed above, many conditions and configurations may contribute to this effect. In one non-limiting example, the plasma profile may result in additional material at radially outer locations. As a result, perforations in the face plate may at least partially mitigate this effect, but increased flow may be channeled through the face plate, providing more material to the edge region for deposition when the plasma is generated.

[0041]

[0047] By removing the edge holes, even if the adjacent holes are about 10 mm or less, about 8 mm or less, about 6 mm or less, or about 4 mm or less, deposition in the edge region can be reduced and deposition in the center region can be increased. However, removing holes from the plasma-facing side of the faceplate can result in a blank surface that can affect the plasma that is formed. For example, the third section of each aperture can provide a hollow cathode effect that can increase the current density in that area and improve ionization and plasma density in adjacent portions of the processing region. When a blank is included in the second surface, that region includes a reduced surface area and a reduced surface profile, which can reduce ionization relative to other regions. As a result, plasma generation in that area can be affected, further reducing material deposition on the substrate surface.

[0042]

[0048] By removing apertures and / or incorporating recesses in the outer region of the faceplate on the plasma generation side, precursor flow extending through the faceplate can become clogged internally, affecting conductance through the faceplate. While this can potentially reduce precursor waste, in some embodiments, edge thickness can increase based on the flow profile from the chamber inlet through the blocker plate and faceplate. While the blocker plate can be adjusted to increase central flow conductance as described above, further adjustments can be performed in some embodiments of the present technology. For example, in some embodiments, apertures can be formed throughout the faceplate, deviating from the aperture ring pattern described above. FIG. 5 is a chart 500 illustrating aperture distribution in a faceplate according to some embodiments of the present technology. The illustrated vertical axis can be a deviation from a general formula defining the aperture pattern for each ring of apertures, such as the previously described XR, where X is the base number of apertures and R is the corresponding ring number. The horizontal axis can be a radial dimension extending from the central axis through the faceplate, and positions further along the axis can correspond to distances further out along the radius.

[0043]

[0049] To further influence flow conductance through the faceplate, in some embodiments, the aperture pattern may deviate from the common formula. As previously mentioned, the number of apertures per ring may be proportionally scaled based on a base number of apertures, such as 4 to 10 apertures, in some embodiments. Each successive ring of apertures may be distributed over the ring by multiplying the base number of apertures in the faceplate by the ring number extending outward from the central axis or central aperture. FIG. 5 may show deviation profiles for some faceplates according to embodiments of the present technology. As shown, apertures extending along a horizontal axis may be maintained in a typical design. In one specific example encompassed by the present technology, a single central aperture may be maintained; however, this may be extended for rings of any number of apertures in some embodiments.

[0044]

[0050] In some embodiments, the number of apertures per ring can then be increased beyond the standard formula to increase the number of apertures per ring near a central region of the faceplate, such as in a first region or first annular region that may include a first subset of rings extending radially outward along the faceplate. For example, each ring can include one or more additional apertures from the standard number of apertures. In one non-limiting example, these rings can be characterized by a number of apertures according to the formula (XR)+N, where N can be from about one additional aperture to about X additional apertures or more, such as up to the base number of apertures. This can continue for one or more rings of apertures. As illustrated in the figures, this can slope back toward a number of apertures corresponding to the formula XR in a second region, such as a second annular region that may include a second subset of rings of apertures extending radially outward along the faceplate. However, as the slope decreases, this may not correspond to a different number N because the figures show the deviation as a percentage of apertures. For example, as each successive outer ring contains more apertures, there may be less variation in the proportion of additional apertures for the same N. As a result, in some embodiments, N may be the same number of apertures or a different number of apertures between any adjacent rings of apertures.

[0045]

[0051] From the second region of apertures, which may be characterized by XR apertures, the number of apertures per ring may then be reduced in a third region, such as a third annular region that may include a third subset of aperture rings, by the formula (XR)-N, in some embodiments, up to (XR)-2N or more, where N again represents the number of apertures, e.g., from about one fewer aperture to about X or more fewer apertures. By reducing the number of apertures in this third region, a more overall reduction in deposition thickness may occur. Thus, step function differences in deposition may be avoided and non-uniformity in the deposition process may be reduced. As a result, the middle region of the faceplate may maintain the number of apertures according to the formula XR, from this middle region to a radially inner region may increase the number of apertures by the formula (XR)+N, and from this middle region to a radially outer or outer region may decrease the number of apertures by the formula (XR)-N or (XR)-2N, where each formula may account for a different ring of apertures in the radially outer region.

[0046]

[0052] A transition in the aperture profile may occur, as shown at position 505, which in some embodiments may correspond to a position corresponding to the radial edge of the substrate being processed. For example, once the ring of apertures extends beyond the radial edge of the substrate, such as about 150 mm for a 300 mm substrate, the apertures may revert to the standard XR formula, but the apertures may switch to recessed apertures as previously described. For example, the final set of aperture rings may be recessed apertures corresponding to any of the formulas above. Although no flow may occur through these apertures, the recessed apertures may still affect the generated plasma distribution. Thus, the recessed aperture distribution may be generated such that the recessed aperture distribution is maintained in a pattern extending outward from the central region of the substrate.

[0047]

[0053] By maintaining recesses on the second surface of the faceplate at locations radially outward of the apertures across the faceplate, while maintaining apertures adjacent and internal locations, including all other aperture locations across the faceplate, the deposition profile can be improved. The deposition non-uniformity can be the difference between the highest and lowest points of deposition. By utilizing faceplates according to embodiments of the present technology, the non-uniformity can be reduced by about 0.5% or more compared to faceplates without aperture adjustments or faceplates without recesses on either side of the faceplate, and the non-uniformity can be reduced by about 1.0% or more, about 2.5% or more, about 5.0% or more, about 7.5% or more, about 10.0% or more, or about 15% or more, depending on the deposition thickness and other deposition conditions. For example, compared to a standard faceplate characterized by similar apertures throughout the faceplate, where the non-uniformity was greater than 17% in a ring containing all apertures corresponding to the formula XR, faceplates according to embodiments of the present technology may reduce the non-uniformity to about 5% or less, may reduce the non-uniformity to about 3% or less, may reduce the non-uniformity to about 2% or less, may reduce the non-uniformity to about 1% or less, or less.

[0048]

[0054] 6 illustrates steps of an exemplary method 600 of semiconductor processing according to some embodiments of the present technique. The method may be performed in a variety of processing chambers, including the processing system 200 described above, which may include faceplates according to embodiments of the present technique, such as faceplate 300. Method 600 may include a number of optional steps that may or may not be particularly relevant to some embodiments of the method according to the present technique.

[0049]

[0055] Method 600 may include a processing method that may include steps for forming a hard mask film or other deposition steps. The method may include optional steps before the start of method 600, or the method may include additional steps. For example, method 600 may include steps performed in a different order than those illustrated. In some embodiments, method 600 may include flowing one or more precursors into a processing chamber in step 605. For example, the precursors may be flowed into a chamber included in system 200, for example, and the precursors may be flowed through one or more of a gas box, a blocker plate, or a face plate before delivering the precursors into a processing region of the chamber.

[0050]

[0056] In some embodiments, the faceplate may have a blocked access in an exterior region of the faceplate surrounding the set of apertures along a first surface and a set of blind recesses on a second surface opposite the first surface, which may face the processing region. All of the other faceplate characteristics described above may also be included, including any aspect of faceplate 300, such as the recesses being characterized by a conical or countersunk profile. In step 610, a plasma of the precursor may be generated in the processing region, such as by applying RF power to the faceplate to generate the plasma. Material formed in the plasma may be deposited on a substrate in step 615. In some embodiments, the deposited material may be characterized by a thickness at the edge of the substrate that is less than or about 10% thicker than a thickness near a middle or central region along a radius of the substrate, depending on the thickness of the deposited material.

[0051]

[0057] Furthermore, the thickness at the edge of the substrate may be about 9% or less thicker than the thickness near the middle or central region along the radius of the substrate, may be about 8% or less thicker, may be about 7% or less thicker, may be about 6% or less thicker, may be about 5% or less thicker, may be about 4% or less thicker, may be about 3% or less thicker, may be about 2% or less thicker, may be about 1% or less thicker, or may be substantially similar or uniform across the position along the substrate. Improved uniformity can be obtained by utilizing a showerhead that includes a set of blind holes in the edge region of the faceplate while not providing fluid access through apertures extending through the faceplate along the edge region.

[0052]

[0058] In the foregoing description, for purposes of explanation, numerous details are presented in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that certain embodiments may be practiced without some of these details or with additional details.

[0053]

[0059] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents may be used without departing from the spirit of the embodiments. Moreover, in order to avoid unnecessarily obscuring the present technology, some well-known processes and elements have not been described. Therefore, the above description should not be construed as limiting the scope of the present technology.

[0054]

[0060] Where a range of values ​​is provided, it is understood that each intervening value, to the smallest fraction of the unit of the lower limit, between the upper and lower limit of that range is also specifically disclosed, unless the context clearly dictates otherwise. Any narrower range between any stated value or unstated intervening value in a stated range and any other stated or intervening value in that stated range is also included. The upper and lower limits of these smaller ranges may independently be included or excluded, and each range in which one or both limits are included, or neither, in the smaller ranges is also included within the technology, subject to any specifically excluded limits in the stated range. When a stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included.

[0055]

[0061] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, a reference to "a heater" includes a plurality of such heaters, a reference to "the protrusion" includes a reference to one or more protrusions and equivalents thereof known to those skilled in the art, and so forth.

[0056]

[0062] Also, as used in this specification and the claims that follow, the terms "comprise(s)," "comprising," "contain(s)," "containing," "include(s)," and "including" specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, practices, or groups.

Claims

1. 1. A semiconductor processing chamber comprising: Gas box and a substrate support; a blocker plate positioned between the gas box and the substrate support, the blocker plate defining a plurality of apertures therethrough; a faceplate positioned between the blocker plate and the substrate support; the faceplate characterized by a first surface facing the blocker plate and a second surface opposite the first surface, the faceplate second surface and the substrate support at least partially defining a processing region within the semiconductor processing chamber, the faceplate characterized by a central axis, the faceplate defining a plurality of apertures therethrough, the faceplate defining a plurality of recesses extending radially outwardly about the plurality of apertures, each recess in the plurality of recesses extending from the faceplate second surface to a depth that is less than a thickness of the faceplate.

2. 10. The semiconductor processing chamber of claim 1, wherein the faceplate is substantially planar across a first surface of the faceplate in an annular region extending radially outward of the plurality of apertures.

3. The semiconductor processing chamber of claim 1 , further comprising a power supply configured to strike a plasma into the processing region of the semiconductor processing chamber.

4. 2. The semiconductor processing chamber of claim 1, wherein each aperture of the plurality of apertures includes an aperture profile characterized by a first section extending from a first surface of the face plate partially through the face plate, and further characterized by a second section extending from a location partially through the face plate to a second surface of the face plate.

5. The semiconductor processing chamber of claim 4 , wherein the first section is characterized by a substantially cylindrical profile.

6. The semiconductor processing chamber of claim 4 , wherein the second section comprises a conical or countersunk profile.

7. 7. The semiconductor processing chamber of claim 6, wherein each recess of the plurality of recesses is characterized by a profile similar to the second section of the aperture profile of each aperture of the plurality of apertures.

8. 10. The semiconductor processing chamber of claim 1, wherein each recess of the plurality of recesses extends from the second surface of the face plate to less than half the thickness of the face plate.

9. 1. A face plate for a semiconductor processing chamber, comprising: a first surface and a second surface opposite the first surface; the face plate is characterized by a central axis extending through the first surface and the second surface; the face plate defines a plurality of apertures extending therethrough; the face plate defines a plurality of recesses extending radially outwardly from the plurality of apertures; A face plate for a semiconductor processing chamber, wherein each recess of the plurality of recesses extends from a second surface of the face plate to a depth that is less than a thickness of the face plate.

10. 10. The faceplate for a semiconductor processing chamber of claim 9, wherein the plurality of recesses are distributed as a set of rings extending outward from a central axis, a first subset of the set of rings characterized by a number of apertures in each corresponding ring by the formula: XR, where X is a base number of apertures and R is a corresponding ring number; a second subset of the set of rings radially inward from the first subset of sets of rings characterized by a number of apertures in the ring by the formula: (XR)+N, where N is an additional number of apertures; and a third subset of the set of rings radially outward from the first subset of sets of rings characterized by a number of apertures in the ring by the formula: (XR)-N, where N is an additional number of apertures.

11. 10. The face plate for a semiconductor processing chamber of claim 9, wherein each aperture of the plurality of apertures extends from a first surface of the face plate to a second surface of the face plate, and wherein a profile of each aperture includes a taper extending from the second surface of the face plate.

12. 12. The face plate for a semiconductor processing chamber of claim 11, wherein the taper extends partway through the depth of the face plate, and the profile of each aperture transitions from the taper to a constriction.

13. 13. The face plate for a semiconductor processing chamber of claim 12, wherein the profile of each aperture transitions to a substantially cylindrical profile extending from the aperture to the first surface of the face plate.

14. 13. The faceplate for a semiconductor processing chamber of claim 12, wherein each recess of the plurality of recesses is characterized by a profile that is identical to the taper of the profile of each aperture of the plurality of apertures.

15. 15. The face plate for a semiconductor processing chamber of claim 14, wherein the profile of each recess in the plurality of recesses transitions to a substantially cylindrical profile that extends less than the thickness of the face plate.

16. 16. The face plate for a semiconductor processing chamber of claim 15, wherein each recess of the plurality of recesses is blocked from providing fluid access through the face plate at a first surface of the face plate.

17. 10. The face plate for a semiconductor processing chamber of claim 9, wherein each recess of the plurality of recesses extends from the second surface of the face plate to less than half the thickness of the face plate.

18. 1. A method of semiconductor processing comprising: flowing a precursor into a processing chamber comprising a face plate and a substrate support on which a substrate is disposed, a processing region of the processing chamber being at least partially defined between the face plate and the substrate support, the face plate defining a plurality of apertures through which the precursor flows, the face plate defining a plurality of recesses extending radially outward from the plurality of apertures, each recess of the plurality of recesses extending from a surface of the face plate facing the substrate support to a depth that is less than a thickness of the face plate; generating a plasma of the precursor in the processing region of the processing chamber; depositing a material on the substrate; A method comprising:

19. 20. The method of semiconductor processing of claim 18, wherein the deposited material is characterized by a thickness near the edge of the substrate that is less than 5% thicker than a thickness near the center of the substrate.

20. 20. The method of semiconductor processing of claim 18, wherein each recess of said plurality of recesses is characterized by a conical or countersink profile.

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