Wafer handling assembly

Abstract

To provide a wafer handling assembly.SOLUTION: An end effector for supporting a wafer is disclosed. The end effector comprises a main body, a vacuum line formed in the main body, a first support arranged for contacting an inner area of a wafer, at least one opening within a boundary of the first support in communication with the vacuum line, and at least one second support arranged for contacting an outer edge of a wafer.SELECTED DRAWING: Figure 1a

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE The present disclosure relates to wafer handling in semiconductor processing, and more particularly to an end effector for handling wafers. [Background technology]

[0002] Semiconductor processing involves various processes performed on substrates, such as wafers, that are aligned with one another to produce semiconductor devices.

[0003] With advances in the semiconductor industry, increasing the number of chips produced and increasing throughput can be important factors in lowering manufacturing costs, which can be made possible by processing larger sized substrates and / or processing multiple substrates at once, e.g., in a batch.

[0004] During some parts of the process, the substrates may be subjected to increased heat, which may lead to some degree of warping at the peripheral edges of the substrates, which may then require careful handling of these warped substrates during further processing in manufacturing, especially if they are processed in batches.

[0005] Certain wafer types are susceptible to warping even without experiencing increased heat and may have specific handling requirements, for example, wafers that have been subjected to a back grind leaving a thin inner region and a thicker edge.

[0006] Therefore, there may be a need for improved handling of substrates. Summary of the Invention

[0007] This summary is provided to introduce some concepts in a simplified form that are described in more detail below in the detailed description of exemplary embodiments of this disclosure. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0008] It may be an object of the present disclosure to provide an end effector for improved handling of warped substrates.It may be a further object of the present disclosure to provide an end effector that can handle both warped and standard substrates.

[0009] In a first aspect, the present disclosure is directed to an end effector.

[0010] The end effector may include a body, a vacuum line formed within the body, a first support configured to contact an inner region of the wafer, at least one opening within a boundary of the first support that is in communication with the vacuum line, and at least one second support configured to contact an outer edge of the wafer.

[0011] The first support configured to contact the inner region of the wafer may include a central raised region and at least one circular raised region configured concentrically with the central raised region, such that when the wafer is supported on the first support, an enclosed volume is formed between the wafer and the first support.

[0012] The first support configured to contact the inner region of the wafer may include a central raised region and at least two circular raised regions configured concentrically with the central raised region, such that when the wafer is supported on the first support, an enclosed volume is formed between the wafer and the first support.

[0013] A vacuum line may be in communication with the enclosed volume.

[0014] The end effector may include a first vacuum line communicating with a first enclosed volume between the central raised region and the adjacent concentric raised region, and a second vacuum line communicating with a second enclosed volume between the two concentric raised regions.

[0015] The height of the at least one second support may be less than the height of the first support.

[0016] The body may have a fork shape having a main portion and two protrusions, and the at least one second support may include respective second supports on the two protrusions and a second support on the main portion.

[0017] The at least one second support may be generally arc-shaped.

[0018] The at least one second support may be circular.

[0019] The at least one second support may protrude from the plane of the end effector at an angle between 1 and 90 degrees from the plane of the end effector, which angle may be between 10 and 80 degrees, 20 and 70 degrees, 30 and 60 degrees, or 40 and 50 degrees.

[0020] The end effector may include at least two second supports configured to contact an outer edge of the wafer, and each of the at least two second supports may include a respective piezoelectric actuator configured to move the respective second support between a wafer-gripping position and a wafer-releasing position.

[0021] In the wafer gripping position, the second support may be closer to the first support than when in the wafer releasing position.

[0022] In the wafer gripping position, the second support may be further away from the first support than when in the wafer releasing position.

[0023] In the wafer gripping position, the second support may be the same distance from the first support as when in the wafer releasing position.

[0024] The body may have a fork shape having a main part and two protrusions, and the at least one second support with the piezoelectric actuator may be arranged on one of the protrusions, and the at least one second support with the piezoelectric actuator may be arranged on the other protrusion.

[0025] According to a second aspect of the present invention, there is provided a wafer handling apparatus comprising a wafer handling robot, an end effector according to the first aspect, a vacuum pump connected to a vacuum line of the end effector, and a control module configured to receive wafers of a wafer type to be handled by the wafer handling apparatus and to set the vacuum pump to an on or off state depending on the wafer type.

[0026] The end effector may be an end effector according to the first aspect comprising a piezoelectric actuator, and the control module may be further configured to control the gripping state of the piezoelectric actuator depending on the wafer type.

[0027] It may be an advantage of embodiments of the present invention that handling of wafers, particularly warped wafers, may be improved.

[0028] It would be an advantage if the reliability of wafer handling could be improved so that wafer breakage or cracking could be reduced.

[0029] BRIEF DESCRIPTION OF THE DRAWINGS It will be understood that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help to improve understanding of the illustrated embodiments of the present disclosure.

[0030] Unless otherwise stated, like reference numerals will be used for like elements in the drawings. Reference signs in the claims shall not be construed as limiting the scope. [Brief explanation of the drawings]

[0031] [Figure 1a] FIG. 1a is a plan view of a first exemplary embodiment of an end effector according to the present invention. [Figure 1b] FIG. 1b is a plan view of a second exemplary embodiment of an end effector according to the present invention. [Figure 1c] FIG. 1c is a plan view of a third exemplary embodiment of an end effector according to the present invention. [Figure 2a] FIG. 2a is a side view of an end effector according to an embodiment of the present invention. [Figure 2b] FIG. 2b is a side view of an end effector according to an embodiment of the present invention. [Figure 2c] FIG. 2c is a side view of an end effector according to an embodiment of the present invention. [Figure 2d] FIG. 2d is a side view of an end effector in accordance with an embodiment of the present invention. [Figure 2e] FIG. 2e is a side view of an end effector according to an embodiment of the present invention. [Figure 2f] FIG. 2f is a side view of an end effector according to an embodiment of the present invention. [Figure 3] FIG. 3 is a side view of an end effector according to an embodiment of the present invention. [Figure 4a] FIG. 4a is a side view of an end effector comprising a piezoelectric actuator according to an embodiment of the present invention. [Figure 4b] FIG. 4b is a side view of an end effector comprising a piezoelectric actuator according to an embodiment of the present invention. [Figure 5] 5 is a schematic diagram of a wafer handling apparatus according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0032] While certain specific embodiments and examples are disclosed below, it will be understood by those skilled in the art that the scope of the invention extends beyond the specifically disclosed embodiments and / or uses of the invention, and obvious variations and equivalents thereof. It is therefore not intended that the scope of the disclosed invention should be limited by the specific disclosed embodiments described below.

[0033] As used in this disclosure, the term "substrate" may refer to any single or multiple underlying materials, such as any single or multiple underlying materials that may be modified or upon which a device, circuit, or film may be formed. A "substrate" may be continuous or discontinuous, rigid or flexible, solid or porous, and combinations thereof. A substrate may be in any form, such as a powder, a plate, or a workpiece. Substrates in plate form may include wafers of various shapes and sizes. Substrates may be made of semiconductor materials, such as, for example, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide.

[0034] For example, the substrate in powder form may have applications in pharmaceutical manufacturing. The porous substrate may comprise a polymer. Examples of workpieces may include medical devices (e.g., stents and syringes), jewelry, tooling devices, components for battery manufacturing (e.g., anodes, cathodes, or separators), or components for photovoltaic cells, etc.

[0035] The continuous substrate may extend beyond the boundaries of the process chamber in which the deposition process occurs. In some processes, the continuous substrate may move through the process chamber so that the process continues until the edge of the substrate is reached. The continuous substrate may be supplied from a continuous substrate supply system to enable the manufacture and production of continuous substrates in any suitable form.

[0036] Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, webs, flexible materials, bundles of continuous filaments or fibers (e.g., ceramic or polymer fibers). Continuous substrates may also include carriers or sheets onto which non-continuous substrates are placed.

[0037] The examples presented in this disclosure are not meant to be actual representations of any particular materials, structures, or devices, but are merely idealized representations used to describe embodiments of the present disclosure.

[0038] The specific implementations shown and described are illustrative of the invention and its best mode and are in no way intended to otherwise limit the scope of aspects and implementations. Also, for the sake of brevity, conventional manufacturing, association, preparation, and other functional aspects of the systems may not be described in detail. Furthermore, connecting lines shown in the various figures are intended to represent example functional relationships and / or physical couplings between the various elements. Many alternative or additional functional relationships or physical connections may be present in an actual system and / or may not be present in some embodiments.

[0039] It will be understood that the configurations and / or approaches described in this disclosure are exemplary in nature, and that these specific embodiments or examples are not to be construed in a limiting sense, as numerous variations are possible. The specific routines or methods described in this disclosure may represent one or more of any number of processing strategies. As such, various illustrated operations may be performed in the order illustrated, or in other orders, or may in some cases be omitted.

[0040] The subject matter of the present disclosure includes all novel and non-obvious combinations and sub-combinations of the various processes, systems, and configurations, as well as other features, functions, operations and / or properties disclosed herein, and any and all equivalents thereof.

[0041] The references to "an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment, although they may be. Furthermore, the particular features, structures or characteristics may be combined in any suitable manner, as would be apparent to one of ordinary skill in the art from this disclosure, in one or more embodiments.

[0042] Throughout this specification, references to "some embodiments" mean that the particular structures, features, steps described in connection with those embodiments are included among some of the embodiments of the present invention. Thus, phrases such as "in some embodiments" appearing in various places throughout this specification do not necessarily refer to the same collection of embodiments, although they may.

[0043] Throughout this specification, a reference to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present disclosure. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification do not necessarily all refer to the same embodiment, although they may.

[0044] It should be noted that, when used herein, the term "comprising" should not be interpreted as being restricted to the means listed thereafter. This term does not exclude other elements or steps. Therefore, this term should be interpreted as specifying the presence of the stated feature, step, or component as mentioned. However, it does not preclude one or more other steps, components, or features, or groups thereof, from being present or being added.

[0045] Terms such as first, second, third, etc. in this specification and claims are used to distinguish between similar elements. They are not necessarily used to describe order, temporally, spatially, ranked, or in any other manner. It should be understood that terms so used are interchangeable under appropriate circumstances, and that the disclosed embodiments described herein are capable of operating in orders other than those described or illustrated herein.

[0046] The following terms are provided solely to aid in the understanding of the present disclosure.

[0047] As used herein, and unless otherwise provided, the term "warped substrate or warped wafer" may refer to a substrate or wafer whose geometry deviates from its initial flat state.

[0048] As used herein, and unless otherwise provided, the term "central portion of a wafer" may refer to a portion of a wafer that may extend at least two-thirds of its radius away from its center.

[0049] The present disclosure will now be described by detailed descriptions of several embodiments of the present disclosure. It is clear that other embodiments of the present disclosure can be constructed according to the knowledge of those skilled in the art without departing from the technical teachings of the present disclosure. The present disclosure is limited only by the terms of the claims contained herein.

[0050] 1-3, an end effector 1 according to an embodiment of the present disclosure includes a body 2. The body 2 is preferably substantially planar. The end effector may be configured to be removably attached to a wafer handling robot (not shown). The wafer handling robot may support a wafer on the end effector 1 to move the wafer between locations, such as a storage cassette, boat, susceptor, cleaning station, or other wafer location within a substrate processing apparatus. The end effector 1 may be generally fork-shaped, having a main portion and two protruding portions. The end effector 1 may also be generally disk-shaped or polygonal.

[0051] The end effector 1 includes a vacuum line 3 formed within the body 2. The vacuum line 3 may include only one channel 4. The vacuum line 3 may include a main channel and two or more secondary channels branching from the main channel. The vacuum line 3 may be a channel 4 within the body 2 having an opening 5 at an end 6 of the end effector 1, where the end effector may be attached to a wafer handling robot, and an opening 7 may be provided at a location where a first support 8 is provided. The opening 5 may be attached to a vacuum pump to evacuate the channel 4 when the opening 7 is closed.

[0052] The end effector 1 includes a first support 8 for contacting an inner region of the wafer. The first support 8 may be positioned so that it can be aligned with the center of a wafer supported on the end effector 1. The first support 8 may be positioned so that the opening 7 is within the outer boundary B of the first support. For example, the first support 8 may include a central circular raised region or protrusion 81 and a concentric circular raised region or protrusion 82 centered about the central circular protrusion 81, and the opening 7 may be provided between the central protrusion 81 and the concentric protrusion 82. 1b, the first support 8 may include a central circular raised region or protrusion 81, a first concentric circular raised region or protrusion 82, and a second concentric circular raised region or protrusion 83, with the first and second circular protrusions 82 and 83 centered about the central protrusion 81, and the first concentric circular protrusion 82 being positioned between the central circular protrusion 81 and the second concentric circular protrusion 83. The vacuum line 3 may include a first opening 71 located between the central protrusion 81 and the first concentric protrusion 82, and a second opening 72 located between the first concentric protrusion 82 and the second concentric protrusion 83. Referring to FIG. 1c, the vacuum line 3 may include a main channel 41 and at least two secondary channels 42, 43 branching from the main channel 41 and connecting with the first and second openings 71, 72, respectively. The first support preferably comprises an elastically deformable material, such as (but not limited to) polytetrafluoroethylene (PTFE).

[0053] 2a and 2b, when the wafer 10 is supported by the first support 8, the openings 7, 71, and 72 may be closed to the volume V above the end effector 1 bounded by the wafer 10 and the first support 8. That is, once the volume V is evacuated, air may not enter the channel 4 through the openings 7, 71, and 72. This creates a vacuum suction effect that can hold the wafer 10 in contact with the end effector 1, as well as the normal reaction of the first support 8 to gravity caused by the mass of the wafer 10. By holding the wafer 10 with a vacuum force, the end effector 1 may be able to move at a faster speed than if a vacuum force were not provided, because the vacuum force can help prevent slippage of the wafer 10 on the end effector 1 as the end effector 1 accelerates or decelerates.

[0054] The end effector 1 includes at least one second support 11 configured to contact the outer edge of the wafer. The second support 11 may include a raised region or protrusion. The second support 11 has a height h1 that may be smaller than the height h2 of the first support 8. The second support 11 may comprise an elastically deformable material, such as PTFE, or a ceramic, such as alumina. Referring to FIGS. 2a and 2b, a flat wafer 10 that has undergone little or no backgrinding may be supported only by the first support 8 due to the difference in height between the first support 8 and the second support 11. Referring to FIGS. 2c-2e, a wafer 10 that has undergone backgrinding, leaving a relatively thin inner region 15 and a relatively thick outer edge 16, may be supported by the first support 8 within the wafer's inner region 15 and by the second support 11 at the edge 16. The wafer 10 may be supported by contacting the second support 11 outside the outer edge 16 (FIG. 2c). The wafer 10 may be supported by contacting the second supports 11 at the bottom of the outer edge 16 (FIG. 2d). The wafer 10 may be supported by contacting the second supports 11 on the inside of the outer edge 16 (FIG. 2e). The wafer 10 may be supported by contacting the second supports 11 on the inside of the outer edge 16 and on the outside of the outer edge (FIG. 2f).

[0055] 3, the second support 11 may protrude from the end effector 1 at an angle α less than 90 degrees relative to the plane of the end effector. This may allow wafers of different diameters to be supported using the same end effector 1.

[0056] Referring again to FIG. 1a, the end effector 1 may have a fork shape having a main portion 17 and two protrusions 181, 182, and at least one second support 11 may include second supports 111, 112 on the two protrusions respectively and a second support 113 on the main portion.

[0057] The at least one second support 11 may be generally arc-shaped. For example, the at least one second support 11 may include a plurality of second supports 11, each arc-shaped and centered on the first support 8. The at least one second support 11 may include a first set of second supports 11, each arc-shaped and centered on the first support 8 at a first distance from the first support 8, and a second set of second supports 11, each arc-shaped and centered on the first support 8 at a second distance from the first support 8, the second distance being different from the first distance, such that the edge 16 of the wafer 10 can be supported between the first set of second supports 11 and the second set of second supports 11. The at least one second support 11 may be a single second support that is circular, unbroken, and centered on the first support 8. The at least one second support 11 may include two second supports, each circular and unbroken, centered on the first support 8 and each having a different radius so that the edge 16 of the wafer 10 can be supported between the two second supports.

[0058] The end effector 1 may include at least two second supports 11, which may be movable between a wafer gripping position and a wafer release position. Movement of the second supports 11 may be achieved by including a piezoelectric actuator 19 in each of the second supports 11. By applying a voltage to the piezoelectric actuator, the actuator expands or contracts, causing the second supports to move.

[0059] For example, referring to FIGS. 4a and 4b, each second support 11 may have an inwardly facing edge 21 and an outwardly facing edge 20, with the inwardly facing edge 21 facing toward the first support 8 and the outwardly facing edge 20 facing away from the first support 8. The second support 11 may be fixed so that the outwardly facing edge 20 does not move. When a voltage is applied to the piezoelectric actuator 19, the second support may expand in a direction toward the first support 8, and because the outwardly facing edge 20 is fixed, the inwardly facing edge 21 moves so that the distance between the inwardly facing edge 21 and the first support 8 decreases to a distance sufficient to grip, for example, the edge 16 of the wafer 10 (FIG. 4b). This may enable the end effector 1 to adopt a wafer gripping position and a wafer release position. In some embodiments, the inward edge 21 may be fixed, the second support 11 may expand away from the first support 8, and the wafer may be gripped in a position similar to that shown in FIG. 2e. In some embodiments, the second support 11 may be fixed at its bottom edge to the end effector 1, and the piezoelectric actuator 19 may be oriented to expand and contract away from the plane of the end effector 1 when a voltage is applied to the piezoelectric actuator 19, and the wafer may be gripped in a position similar to that shown in FIG. 2d. Therefore, the distance between the first support 8 and the second support 11 does not change when the end effector is in the wafer gripping or wafer releasing position.

[0060] In some embodiments, the body of the end effector 1 has a fork shape having a main part 17 and two protrusions 181, 182, and at least one second support 11 equipped with a piezoelectric actuator 19 is arranged on one protrusion 181, and at least one second support 11 equipped with a piezoelectric actuator 19 is arranged on the other protrusion 182.

[0061] The piezoelectric actuator 19 may be controlled by a voltage applied through connecting wires (not shown) routed through the end effector 1 .

[0062] Referring to FIG. 5 , an embodiment of the present invention provides a wafer handling apparatus 30 including a wafer handling robot 31, an end effector 1, a vacuum pump 32 connected to a vacuum line of the end effector 1, and a control module 33 configured to receive wafers of a wafer type to be handled by the wafer handling apparatus and to set the vacuum pump to an on or off state depending on the wafer type. The wafer handling apparatus 30 may be included in a semiconductor processing equipment (not shown), and the control module 33 may receive the wafer type from a central control module of the semiconductor processing equipment. The wafer handling apparatus control module 33 may be configured to set the vacuum pump to an on state if the wafer type is a normal flat wafer type and to set the vacuum pump to an off state if the wafer type is a bowed wafer type, e.g., a wafer being back-grinded. This may enable wafer handling to be adapted to different wafer types. In addition to the vacuum pump status, the control module 33 may be configured to control the position of the wafer handling robot 31, for example, to move the wafer handling robot 31 to a wafer pick-up position, turn on the vacuum pump, pick up the wafer, move the wafer to its destination, and turn off the vacuum pump.

[0063] The end effector may be an end effector including a piezoelectric actuator 19 in the second support 11, and the control module 33 may be further configured to control the gripping state of the piezoelectric actuator 19 depending on the wafer type. For example, the wafer handling device control module 33 may be configured to set the piezoelectric actuator 19 to the release state, move the wafer handling robot to the wafer pick-up position, and pick up the wafer by supporting the wafer on the first support, regardless of the wafer type, and set the piezoelectric actuator 19 to the gripping state if the wafer type is a warped wafer type.

[0064] Throughout this specification, a reference to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, the appearances of the phrase "in one embodiment" or "in an embodiment" in various places throughout this specification do not necessarily all refer to the same embodiment. Furthermore, it is noted that particular features, structures, or characteristics of one or more embodiments may be combined in any suitable manner to form new embodiments not expressly described. The subject matter of this disclosure includes all novel and non-obvious combinations and subcombinations of the various processes, systems, and configurations, and other features, functions, operations, and / or characteristics disclosed in this disclosure, and any and all equivalents thereof. [Explanation of symbols]

[0065] 1 End Effector 2 Main unit 3 Vacuum Line 5, 7 Opening 8 First Support 11 Second Support

Claims

1. an end effector for supporting a wafer, The main body and a vacuum line formed within the body; a first support configured to contact an inner region of the wafer; at least one opening within the boundary of the first support in communication with the vacuum line; at least one second support configured to contact an outer edge of the wafer; The end effector comprises:

2. the first support configured to contact an inner region of the wafer; a central raised region; at least one circular raised region concentrically configured with the central raised region; 10. The end effector of claim 1, wherein an enclosed volume is formed between the wafer and the first support when the wafer is supported on the first support.

3. the first support configured to contact an inner region of the wafer; a central raised region; at least two circular raised regions concentrically arranged with the central raised region; 10. The end effector of claim 1, wherein an enclosed volume is formed between the wafer and the first support when the wafer is supported on the first support.

4. The end effector of claim 2 or 3, wherein the vacuum line is in communication with the enclosed volume.

5. a first vacuum line communicating with a first enclosed volume between the central raised region and an adjacent concentric raised region; a second vacuum line communicating with the second enclosed volume between the two concentric circular raised regions; The end effector of claim 3 , comprising:

6. The end effector of claim 1 , wherein a height of the at least one second support is less than a height of the first support.

7. the body has a fork shape with a main portion and two prongs; The at least one second support comprises: a second support portion on each of the two protrusions; and a second support portion on the main portion; The end effector of claim 1 , comprising:

8. The end effector of claim 1 , wherein the at least one second support is generally arc-shaped.

9. The end effector of claim 1 , wherein the at least one second support is circular.

10. The end effector of claim 1 , wherein the at least one second support protrudes from a plane of the end effector at an angle between 1 degree and 90 degrees relative to the plane of the end effector.

11. 10. The end effector of claim 1, comprising at least two second supports configured to contact an outer edge of a wafer, each of the at least two second supports comprising a respective piezoelectric actuator configured to move the respective second support between a wafer-gripping position and a wafer-releasing position.

12. The end effector of claim 11 , wherein when in the wafer gripping position, the second support is closer to the first support than when in the wafer releasing position.

13. The end effector of claim 11 , wherein when in the wafer gripping position, the second support is further away from the first support than when in the wafer releasing position.

14. The end effector of claim 11 , wherein when in the wafer gripping position, the second support is the same distance from the first support as when in the wafer releasing position.

15. the body has a fork shape with a main portion and two protrusions; at least one second support having a piezoelectric actuator is disposed on one of the protrusions; The end effector of claim 11 , wherein at least one second support comprising a piezoelectric actuator is disposed on the other protrusion.

16. a wafer handling robot; and The end effector of claim 1; a vacuum pump connected to the vacuum line of the end effector; a control module configured to receive wafers of a wafer type to be handled by the wafer handling device and to set the vacuum pump to an on or off state depending on the wafer type; 1. A wafer handling apparatus comprising:

17. The end effector is an end effector according to any one of claims 11 to 15, 17. The wafer handling device of claim 16, wherein the control module is further configured to control a gripping state of the piezoelectric actuator depending on the wafer type.

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