Adjustment processing device, film formation processing system, adjustment processing method and adjustment processing program

Abstract

To shorten a time of an adjustment work in a film formation processing step.SOLUTION: An adjustment processing device comprises: a film thickness measurement result acquisition section which acquires a film thickness measurement result of a wafer in which a film is formed by a film formation processing device; a formulation section which formulates the film thickness measurement result using an orthogonal polynomial; and an adjustment section which adjusts a transfer position of the wafer and a process condition of the film formation processing device based on weights of components of the orthogonal polynomial which are calculated in the case of formulation.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present disclosure relates to an adjustment processing apparatus, a film forming processing system, an adjustment processing method, and an adjustment processing program. [Background technology]

[0002] In a film forming process for forming a film on a substrate, an operation for adjusting the transfer position of the substrate and an operation for adjusting the process conditions are performed in order to achieve an appropriate film thickness distribution.

[0003] The operation of adjusting the substrate transfer position refers to, for example, the operation of adjusting the substrate transfer position so as to eliminate the deviation between the center position of the film thickness distribution and the center position of the substrate when a concentric film thickness distribution is formed when a film is formed on the substrate. Furthermore, the operation of adjusting the process conditions refers to, for example, the operation of adjusting the process conditions so as to eliminate the variation in film thickness at each position on the surface of the substrate and make it uniform.

[0004] However, in the past, eliminating deviations in the center position and achieving uniform film thickness at each position on the surface were considered to be independent adjustment tasks, and these adjustment tasks were performed in two separate stages, which meant that the adjustment tasks required a lot of time in the film formation process. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2024-7897 Summary of the Invention [Problem to be solved by the invention]

[0006] The present disclosure reduces the time required for adjustment work in a film formation process. [Means for solving the problem]

[0007] An adjustment processing device according to one aspect of the present disclosure has, for example, the following configuration: a film thickness measurement result acquisition unit that acquires film thickness measurement results of a substrate on which a film has been formed by a film formation processing apparatus; a formulation unit that formulates the film thickness measurement results using orthogonal polynomials; The apparatus further includes an adjustment unit that adjusts the transfer position of the substrate and the process conditions of the film formation processing apparatus based on the weight of each component of the orthogonal polynomial calculated when formulating the equation. [Effects of the Invention]

[0008] According to the present disclosure, it is possible to reduce the time required for adjustment work in a film formation process. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 illustrates an example of a system configuration of a film forming processing system. [Figure 2] FIG. 1 is a diagram illustrating a schematic configuration example of a film forming processing apparatus. [Figure 3] 2A and 2B are diagrams illustrating a schematic configuration example of a transfer device and a schematic configuration example of the inside of a reaction chamber of a film forming processing device. [Figure 4A] 10A and 10B are diagrams showing an example of transfer of a substrate in a reaction vessel transferred by a transfer device. [Figure 4B] 10A and 10B are diagrams for explaining a method for adjusting a transfer position. [Figure 5] FIG. 2 is a diagram showing an example of measurement points at which film thickness is measured by a film thickness measurement device. [Figure 6] FIG. 2 illustrates an example of a hardware configuration of an adjustment processing device. [Figure 7] FIG. 2 illustrates an example of a functional configuration of an adjustment processing device. [Figure 8] FIG. 1 is a diagram illustrating an example of a Zernike polynomial. [Figure 9] FIG. 1 is a diagram showing an example of Fringe notation for Zernike polynomials. [Figure 10] FIG. 10 is a diagram illustrating a specific example of processing by a formulation unit. [Figure 11]10A and 10B are diagrams showing an example of film thickness measurement results before adjustment processing and the weights of each component of a Zernike polynomial. [Figure 12] 10A and 10B are diagrams illustrating a specific example of processing by a transfer position adjustment unit. [Figure 13] 10A and 10B are diagrams illustrating a specific example of processing by a process condition adjusting unit. [Figure 14] 10 is a flowchart showing the flow of an adjustment process performed by a film forming system of a comparative example. [Figure 15] 10 is a flowchart showing the flow of an adjustment process performed by the film forming system. [Figure 16] 10A and 10B are diagrams illustrating an example of a film formation result after an adjustment process by the film formation system and the weight of each component of a Zernike polynomial. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, each embodiment will be described with reference to the accompanying drawings. In this specification and drawings, components having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0011] [First embodiment] <System configuration of film deposition processing system> First, the system configuration of a film formation system according to the first embodiment will be described. Fig. 1 is a diagram showing an example of the system configuration of a film formation system. The film formation system 100 is a system involved in a film formation process for forming a film on a substrate, and as shown in Fig. 1, includes a film formation processing device 110, a transfer device 120, a film thickness measurement device 130, and an adjustment processing device 140. In the film formation processing system 100, the film formation processing device 110, the transfer device 120, the film thickness measurement device 130, and the adjustment processing device 140 are communicably connected via a network 150.

[0012] In the first embodiment, among various functions executed by each device of the film formation system 100 involved in the film formation process, functions related to adjustment processing for realizing a film thickness distribution that satisfies predetermined requirements will be mainly described. The adjustment processing here includes processing for adjusting the transfer position of the substrate and processing for adjusting the process conditions.

[0013] The film forming apparatus 110 is an apparatus for forming a film on a substrate under predetermined process conditions. The process conditions used when forming a film on a substrate are adjusted by an adjustment processing apparatus 140 and set in the film forming apparatus 110.

[0014] The transfer device 120 transfers the substrate before film formation to a wafer port (details will be described later) in a reaction vessel of the film formation processing device 110. The adjustment amount when adjusting the transfer position in the wafer port when the transfer device 120 transfers the substrate before film formation is calculated by the adjustment processing device 140 and set in the transfer device 120.

[0015] The film thickness measuring device 130 measures the film thickness at each position on the substrate on which a film has been formed by the film forming processing device 110. The film thickness measurement results measured by the film thickness measuring device 130 are notified to the adjustment processing device 140.

[0016] The adjustment processing device 140 acquires, from the film thickness measurement device 130, film thickness measurement results indicating film thicknesses at each position on the substrate on which a film has been formed by the film formation processing device 110. The adjustment processing device 140 formulates the acquired film thickness measurement results using an orthogonal polynomial (e.g., Zernike polynomial) to calculate the weight of each component of the orthogonal polynomial. Based on the calculated weight of each component, the adjustment processing device 140 calculates: When the film thickness distribution on the substrate is formed concentrically, the adjustment amount of the substrate transfer position is calculated to eliminate the deviation between the center position of the film thickness distribution and the center position of the substrate. ·Adjust the process conditions to eliminate variations in film thickness at each position on the substrate and make it uniform.

[0017] The adjustment processing device 140 sets the adjustment amount of the substrate transfer position in the transfer device 120, and also sets the adjusted process conditions in the film formation processing device 110.

[0018] In this way, in the film formation processing apparatus 110, the following can be calculated from the film thickness measurement results obtained from one film formation. Information for calculating the amount of adjustment of the substrate transfer position, and Information for adjusting process conditions, The weight of each component of the orthogonal polynomial is calculated as an index value including both the center position and the film thickness. The reason for calculating such an index value is that eliminating the deviation of the center position and eliminating the film thickness variation at each position and making it uniform are adjustment operations that affect each other.

[0019] Conventionally, eliminating the misalignment of the center position and eliminating the variation in film thickness at each position and making it uniform were considered to be independent adjustment tasks. For this reason, the adjustment of the substrate transfer position and the adjustment of the process conditions were carried out in two stages, which required a lot of time for adjustment tasks in the film formation process.

[0020] On the other hand, the adjustment processing device 140 configured to calculate the index value eliminates the need to divide the adjustment work into two stages, making it possible to shorten the time required for the adjustment work in the film forming process.

[0021] <Details of each device in the film formation processing system> Next, each device (here, the film formation processing device 110, the transfer device 120, and the film thickness measuring device 130) included in the film formation processing system 100 will be described in detail.

[0022] (1) Example of the outline of the film forming processing equipment First, a description will be given of an example of a schematic configuration of the film forming processing apparatus 110. Fig. 2 is a diagram showing an example of a schematic configuration of the film forming processing apparatus.

[0023] The film forming processing apparatus 110 includes a reaction vessel 11 having a double-tube structure consisting of a straight inner tube 11A and an outer tube 11B. The straight inner tube 11A is arranged in the height direction (the up-and-down direction in FIG. 2). The upper end of the straight inner tube 11A is open. The outer tube 11B is arranged concentrically with the inner tube 11A at a predetermined distance so that a cylindrical space 11C is formed around the inner tube 11A. The upper end of the outer tube 11B is open. Both the straight inner tube 11A and the outer tube 11B are made of a material having excellent heat resistance and corrosion resistance, such as high-purity quartz glass.

[0024] A cylindrical heater 25 is installed outside the reaction vessel 11 so as to surround the reaction vessel 11. The cylindrical heater 25 functions as a heating means for heating the substrate W accommodated in the reaction vessel 11. The cylindrical heater 25 is provided with a cylindrical heat insulating material (not shown). The cylindrical heat insulating material has a linear resistance heating element arranged in a spiral or serpentine shape on its inner surface. The resistance heating element is connected to a control device 90, and the amount of power to be supplied is controlled by the control device 90 so that the substrate W reaches a predetermined temperature. The control device 90 is configured to control not only the resistance heating element but also the operation of the entire film formation processing apparatus 110.

[0025] The cylindrical heater 25 is configured to divide the reaction vessel 11 into a plurality of heating zones (five heating zones Z1 to Z5 in the example of FIG. 2) in the height direction, and to independently control the temperature of each of the heating zones Z1 to Z5.

[0026] The reaction vessel 11 has a space below it. The space below the reaction vessel 11 is a loading area where a substrate W, which is an object to be processed, is transferred to and from a wafer port 80, which serves as a holder for an object to be processed, by a transfer device 120 (not shown in FIG. 2).

[0027] A short cylindrical manifold 12 is provided at the lower end of the outer tube 11B of the reaction vessel 11. The manifold 12 has a flange portion 12A at its upper end. A lower end flange portion 11E provided at the lower end of the outer tube 11B is joined to the flange portion 12A via a sealing means (not shown), such as an O-ring. This keeps the outer tube 11B of the reaction vessel 11 airtightly fixed.

[0028] The inner tube 11A of the reaction vessel 11 extends downward from the lower end surface of the outer tube 11B and is inserted into the manifold 12. An annular inner tube support portion 14 is provided on the inner surface of the manifold 12 to support the inner tube 11A inserted into the manifold 12.

[0029] In the vertical cross section of the reaction vessel 11, gas supply pipes 15A and 15B are provided on one side wall of the manifold 12. The gas supply pipe 15A introduces a processing gas into the reaction vessel 11. The gas supply pipe 15B introduces an inert gas into the reaction vessel 11. The gas supply pipes 15A and 15B airtightly penetrate the side wall of the manifold 12 and are provided in the vertical direction within the inner pipe 11A. The gas supply pipes 15A and 15B are each connected to a gas supply source (not shown).

[0030] In the vertical cross section of the reaction vessel 11, an exhaust pipe 16 is provided on the other side surface of the manifold 12. The exhaust pipe 16 is provided so as to communicate with a cylindrical space 11C between the inner pipe 11A and the outer pipe 11B. An exhaust mechanism (not shown) having, for example, a vacuum pump and a pressure control mechanism is connected to the exhaust pipe 16, thereby controlling the pressure inside the reaction vessel 11 to a predetermined pressure.

[0031] An elevator mechanism (not shown) is provided below the reaction vessel 11. The elevator mechanism is driven vertically to load the wafer port 80 into and load it out of the reaction vessel 11. The elevator mechanism includes a disk-shaped lid 20 that opens and closes the bottom opening 11D of the reaction vessel 11. A rotation drive means 23 is provided below the lid 20. The rotation drive means 23 airtightly penetrates the lid 20. A rotation drive shaft 23A of the rotation drive means 23 is connected to the bottom surface of a heat-retaining cylinder (thermal insulator) 24.

[0032] (2) Example of the schematic configuration of the transfer device and the reaction vessel Next, a description will be given of a schematic configuration of a transfer device 120 that transfers a substrate W to a wafer port 80 in the loading area, and a schematic configuration inside the reaction vessel 11 from which the substrate W has been transferred to the wafer port 80 by the transfer device 120. Fig. 3 is a diagram showing an example of the schematic configuration of the transfer device and an example of the schematic configuration inside the reaction vessel.

[0033] The wafer port 80 is made of, for example, high-purity quartz glass. As shown in Fig. 3, the wafer port 80 holds a plurality of (for example, about 100 to 150) disk-shaped substrates W in a horizontal direction. The wafer port 80 has workpiece holding portions, such as grooves for holding workpieces, formed on the supports 83 so that the substrates W can be held in multiple stages, one above the other, at a predetermined interval (pitch) in the range of, for example, 4 to 20 mm. The transfer device 120 transfers the substrates W in the loading area with the lid 20 in the lowest position.

[0034] The transfer device 120 is equipped with a transfer head 32 having a long, narrow rectangular shape. The transfer head 32 is movable up and down and is rotatable around a rotation shaft 31 that extends up and down. The transfer head 32 is provided with, for example, one to five thin, fork-shaped support arms 33 that are movable back and forth in the length direction of the transfer head 32. In the transfer device 120, the up and down movement and rotational movement of the transfer head 32 and the movement back and forth of the support arms 33 are controlled by a control device (not shown).

[0035] As a result, the substrates W are removed from the storage container transported by an appropriate transport means (not shown), and in the loading area, with the lid body 20 in the lowest position, the substrates W are transferred sequentially to the wafer port 80 waiting on the lid body 20.

[0036] In each of the workpiece holders in the wafer port 80, the transfer position to which the substrate W is transferred is, for example, a position that coincides with the rotation center position of the wafer port 80. The transfer position to which the substrate W is transferred is adjusted in advance by setting an adjustment amount calculated by the adjustment processing device 140 in the transfer device 120. The wafer port 80 is rotationally driven by the rotation drive means 23. For example, a dummy substrate (dummy wafer) is placed on the uppermost and lowermost workpiece holders in the wafer port 80.

[0037] The lifting mechanism drives the lid 20 upward, and the wafer port 80 is carried into the reaction vessel 11 through the lower opening 11D, whereby the lower opening 11D of the reaction vessel 11 is airtightly closed by the lid 20. Thereafter, the exhaust means is activated to reduce the pressure inside the reaction vessel 11 to a predetermined level, and the cylindrical heater 25 is activated to heat each of the heating zones Z1 to Z5 in the reaction vessel 11 to the target temperature at which the substrate W is to be processed.

[0038] When the heating zones Z1 to Z5 are heated, a processing gas is introduced into the reaction vessel 11 through the gas supply pipe 15A as appropriate, and a film is formed on the substrate W. As described above, the process conditions used for film formation on the substrate W (e.g., the target temperature, the type of processing gas, the gas flow rate, the gas introduction time, etc.) are adjusted by the adjustment processing device 140 and set in advance in the film formation processing device 110.

[0039] (3) Example of transferring substrates in a reaction vessel Next, an example of transferring a substrate W in the reaction vessel 11 will be described. Fig. 4A is a diagram showing an example of transferring a substrate in the reaction vessel. As shown in Fig. 4A, the wafer port 80 has a top plate 81 and a bottom plate 82, and has support columns 83 between the top plate 81 and the bottom plate 82. Fig. 4A shows an example in which three support columns 83 are provided. The number of support columns 83 can be set according to the application as long as it is three or more, and for example, the number of support columns 83 can be four.

[0040] Each support pillar 83 has support portions 84 formed in the vertical direction at a predetermined interval. The interval between the support portions 84 can be set appropriately depending on the application, but for example, as described above, the interval between the support portions 84 may be set so that 50 to 150 substrates W can be arranged in one wafer port 80.

[0041] The support parts 84 may have any shape as long as they can support the substrate W. For example, the support parts 84 may be formed in a rectangular shape having a horizontal surface extending toward the center. Each support part 84 supporting the same substrate W is configured to support the substrate W in a horizontal state. Specifically, each support part 84 supporting the same substrate W is set to the same height. Furthermore, in the case where there are three support pillars 83, one support pillar 83a is positioned at the back center when viewed from the front where the substrate W is placed, and the other two support pillars 83b and 83c are positioned symmetrically with respect to support pillar 83a.

[0042] The top plate 81 and the bottom plate 82 may be formed in an annular shape having an opening 81a and an opening 82a in their central regions, respectively. The wafer port 80 may also include reinforcing columns as needed in addition to the support columns 83. The reinforcing columns are support columns provided for reinforcing the wafer port 80 to increase its strength, and do not include support portions 84 for supporting the substrate W.

[0043] For example, one reinforcing pillar may be provided between the rear center pillar 83a and the left side pillar 83b, and one reinforcing pillar may be provided between the rear center pillar 83a and the right side pillar 83c. Note that the wafer port 80 may be made of various materials depending on the application, including quartz, which is the same material as the wafer port support base.

[0044] 2, the gas supply pipe 15A is disposed outside the substrate W, and therefore the distance from the gas supply pipe 15A to each position on the surface of the substrate W is different from each other. As a result, when a film is formed using the processing gas, the film thickness varies at each position on the surface of the substrate W.

[0045] (4) How to adjust the transfer position Next, a description will be given of an adjustment method for adjusting the transfer position of the substrate W to be transferred to the wafer port 80. Fig. 4B is a diagram for explaining the adjustment method of the transfer device. The transfer device 120 shifts the support arm 33 in the front-rear direction and the rotational direction based on the instructed transfer position of the substrate W, and transfers the substrate W onto the support part 84 of the wafer port 80.

[0046] For example, when multiple substrates W are transferred and film-formed in one batch, the central positions of the substrates W transferred to multiple locations in the vertical direction are instructed as transfer positions to the transfer device 120. Specifically, the transfer device 120 is instructed as to the amount of movement of the support arm 33 in the forward and backward directions and the amount of movement in the rotational direction from the base position.

[0047] This allows the support arm 33 to be shifted in the front-to-rear and rotational directions from the base position of the wafer port 80, and the substrate W can be transferred onto the support part 84. As described above, the transfer position of the substrate W is calculated by the adjustment processing device 140 and adjusted based on the adjustment amount set in advance in the transfer device 120.

[0048] (5) Measurement points of the film thickness measuring device Next, measurement points when the film thickness measurement device 130 measures the film thickness at each position on the substrate W will be described. FIG. 5 is a diagram showing an example of measurement points at which film thickness is measured by the film thickness measurement device. As shown in FIG. 5, the film thickness measurement device 130 measures film thicknesses at measurement points MP1 to MP24 in the surface of the substrate W. The film thickness measurement device 130 transmits "film thickness measurement results" including the coordinates of the measurement points MP1 to MP24 in the surface of the substrate W and the film thicknesses at the measurement points MP1 to MP24 in the surface of the substrate W to the adjustment processing device 140. Note that the number and positions of the measurement points shown in FIG. 5 are merely an example and are not limited to these.

[0049] <Hardware configuration of adjustment processing device> Next, the hardware configuration of the adjustment processing device 140 will be described. Fig. 6 is a diagram showing an example of the hardware configuration of the adjustment processing device. As shown in Fig. 6, the adjustment processing device 140 has a processor 601, a memory 602, an auxiliary storage device 603, a connection device 604, a communication device 605, and a drive device 606. The hardware components included in the adjustment processing device 140 are connected to each other via a bus 607.

[0050] The processor 601 has various arithmetic devices such as a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc. The processor 601 reads various programs (for example, an adjustment processing program, etc.) into the memory 602 and executes them.

[0051] The memory 602 has a main storage device such as a ROM (Read Only Memory), a RAM (Random Access Memory), etc. The processor 601 and the memory 602 form a so-called computer, and the processor 601 executes various programs read onto the memory 602, causing the computer to realize various functions.

[0052] The auxiliary storage device 603 stores various programs and various information used when the processor 601 executes the various programs.

[0053] The connection device 604 connects external devices (such as an operation device 611 and a display device 612) to the adjustment processing device 140.

[0054] The communication device 605 transmits and receives various information between the film forming processing device 110 , the transfer device 120 , the film thickness measuring device 130 and the adjustment processing device 140 .

[0055] The drive device 606 is a device for loading a recording medium 613. The recording medium 613 here includes media that record information optically, electrically, or magnetically, such as a CD-ROM, a flexible disk, a magneto-optical disk, etc. The recording medium 613 may also include semiconductor memories that record information electrically, such as ROMs and flash memories.

[0056] The various programs to be installed in the auxiliary storage device 603 are installed, for example, by setting the distributed recording medium 613 in the drive device 606 and reading the various programs recorded on the recording medium 613 by the drive device 606. Alternatively, the various programs to be installed in the auxiliary storage device 603 may be installed by being downloaded from a network (not shown) via the communication device 605.

[0057] <Functional configuration of adjustment processing device> Next, the functional configuration of the adjustment processing device 140 will be described. Fig. 7 is a diagram showing an example of the functional configuration of the adjustment processing device. As described above, an adjustment processing program is installed in the adjustment processing device 140. By executing this program in the adjustment processing device 140, the adjustment processing device 140 functions as a film thickness measurement result acquisition unit 701, a formulation unit 702, and an adjustment unit 703.

[0058] The film thickness measurement result acquisition unit 701 acquires film thickness measurement results, including film thicknesses at each position on the substrate W, measured by the film thickness measurement device 130, from the film thickness measurement device 130. The film thickness measurement result acquisition unit 701 notifies the formulation unit 702 of the acquired film thickness measurement results.

[0059] The formulation unit 702 uses orthogonal polynomials to formulate the film thickness measurement results notified from the film thickness measurement result acquisition unit 701. As shown in Fig. 7, the adjustment processing device 140 according to this embodiment has a Zernike polynomial storage unit 711, and the formulation unit 702 reads out Zernike polynomials from the Zernike polynomial storage unit 711 as orthogonal polynomials and formulates the results.

[0060] Specifically, the formulation unit 702 calculates a weight for each component of the Zernike polynomial so that the sum of squares of the error between the output obtained by inputting the coordinates of each position included in the film thickness measurement result into each component and the film thickness corresponding to the coordinates of each position included in the film thickness measurement result is minimized. The formulation unit 702 notifies the adjustment unit 703 of the calculated weight for each component.

[0061] The adjustment unit 703 has a transfer position adjustment unit 703_1 and a process condition adjustment unit 703_2. The transfer position adjustment unit 703_1 extracts a first component from the weights of the components of the Zernike polynomial notified by the formulation unit 702, and calculates an adjustment amount for adjusting the transfer position of the substrate W using the extracted first component.

[0062] The first component is a component of the Zernike polynomial that is related to the amount of deviation between the center position of the film thickness distribution and the center position of the substrate W when a concentric film thickness distribution is formed, and the transfer position adjustment unit 703_1 identifies the amount of deviation by extracting the weight of the component. Note that the relationship between the weight of the first component and the amount of deviation is defined, for example, by a predetermined function, and the transfer position adjustment unit 703_1 identifies the amount of deviation using the predetermined function. The transfer position adjustment unit 703_1 calculates the adjustment amount when adjusting the transfer position of the substrate W based on the identified amount of deviation.

[0063] Here, the transfer position adjustment unit 703_1 specifies the amount of deviation, and based on the specified amount of deviation, calculates the adjustment amount for adjusting the transfer position of the substrate W. However, the method for calculating the adjustment amount for adjusting the transfer position of the substrate W is not limited to this, and for example, the adjustment amount for adjusting the transfer position of the substrate W may be directly calculated using the weight of the extracted first component.

[0064] In this case, for example, it is assumed that the adjustment amount storage unit 712 stores in advance information indicating the correspondence relationship between the weight pattern of the first component and the adjustment amount pattern for adjusting the transfer position of the substrate W. Then, the transfer position adjustment unit 703_1 searches for a weight pattern similar to the weight pattern of the first component notified by the formulation unit 702, and reads out the adjustment amount pattern associated with the searched weight pattern from the adjustment amount storage unit 712, thereby calculating the adjustment amount.

[0065] The process condition adjusting unit 703_2 extracts a second component from the weights of the components of the Zernike polynomial notified by the formulation unit 702, and adjusts the process conditions using the extracted second component.

[0066] The second component is a component of the Zernike polynomial that is related to the process condition for making the film thickness uniform at each position, and the process condition adjusting unit 703_2 adjusts the process condition by extracting the weight of the component. Note that the second component may be different from the first component, or may overlap with the first component in part or in whole.

[0067] Specifically, the process condition adjustment unit 703_2 refers to a process condition storage unit 713 in which a weight pattern of the second component and a process condition pattern for eliminating and equalizing the film thickness variation at each position are stored in advance in association with each other. The process condition adjustment unit 703_2 searches for a weight pattern similar to the weight pattern of the second component notified by the formulation unit 702. Then, the process condition adjustment unit 703_2 reads out the process condition pattern associated with the searched weight pattern from the process condition storage unit 713 to adjust the process conditions.

[0068] Note that the adjustment amount calculated by the transfer position adjustment unit 703_1 is notified to the transfer device 120, and the process conditions adjusted by the process condition adjustment unit 703_2 are notified to the film forming processing device 110. Thereby, in the transfer device 120, the transfer position is adjusted based on the notified adjustment amount, and in the film forming processing device, 110, the substrate W is film-formed based on the notified process conditions.

[0069] <Explanation of Zernike polynomials> Next, a Zernike polynomial, which is an example of an orthogonal polynomial used when the formulation unit 702 formulates the film thickness measurement result, will be described. FIG. 8 is a diagram showing an example of the Zernike polynomial. The Zernike polynomial is an orthogonal polynomial defined on the unit circle and is represented by the following equation, as shown in FIG. 8(a).

[0070] <N / A>

Number

[0071]

Number

[0072] Also, each component of the Zernike polynomial,

[0073]

number

[0074]

number

[0075] Various notations are defined for Zernike polynomials. Fig. 9 shows an example of Fringe notation for Zernike polynomials. Of these, Fig. 9(a) shows a specific example of Fringe notation, and the combination of "n" and "m" in Fig. 9(b) corresponds to the combination of "n" and "m" in Fig. 8(b). In Fig. 9(b), "j" is a number that identifies each component.

[0076] Figure 9(c) shows an example of the Fringe notation, which expresses the output of the Zernike polynomial using each component of j = 2 to 11. For reference, the value of each position in the unit circle of each component is shown in correspondence with each component. In the example of Figure 9(c), the weights of each component of j = 2 to 11 are expressed as α2 to α 11 It states that:

[0077] <Specific examples of processing by the formulation unit> Next, a description will be given of a specific example of processing by the formulation unit 702. Fig. 10 is a diagram showing a specific example of processing by the formulation unit. As shown in Fig. 10, the formulation unit 702 further includes an input unit 1001, a calculation unit 1002, an error calculation unit 1003, and a weight calculation unit 1004.

[0078] The input unit 1001 acquires the film thickness measurement results notified from the film thickness measurement result acquisition unit 701. The film thickness measurement results notified from the film thickness measurement result acquisition unit 701 include: Coordinates (ρ, φ) indicating each position on the surface of the substrate W, - Film thickness at each coordinate (Z), This includes:

[0079] The input unit 1001 inputs coordinates indicating each position within the surface of the substrate W, which are included in the film thickness measurement result, to the calculation unit 1002. The input unit 1001 also notifies the error calculation unit 1003 of the film thickness at each coordinate, which is included in the film thickness measurement result.

[0080] The calculation unit 1002 reads out a Zernike polynomial from the Zernike polynomial storage unit 711, and inputs coordinates indicating any position within the surface of the substrate W into each component of the Zernike polynomial. The calculation unit 1002 also assigns weights (for example, α2 to α 11 ), and then adds them up, and outputs the sum to the error calculation unit 1003. The calculation unit 1002 calculates the weights of each component (for example, α2 to α 11 ) to calculate the sum.

[0081] The calculation unit 1002 performs the process of outputting the summation results for all coordinates indicating positions within the surface of the substrate W, and outputs the summation results for all coordinates included in the film thickness measurement results.

[0082] The error calculation unit 1003 compares the summation result at each coordinate output from the calculation unit 1002 with the film thickness at each coordinate notified by the input unit 1001, and calculates the sum of the errors (e.g., least square error) between the summation result at each coordinate and the film thickness. The error calculation unit 1003 notifies the weight calculation unit 1004 of the calculated sum of the errors at each coordinate.

[0083] The weight calculation unit 1004 calculates the weight of each component (for example, α2 to α3) so that the sum of the errors notified from the error calculation unit 1003 is minimized. 11) and notifies the calculation unit 1002. The calculation unit 1002, the error calculation unit 1003, and the weight calculation unit 1004 repeat the process until the sum of the errors is minimized. The weight calculation unit 1004 calculates the weights of the components (for example, α2 to α 11 ) to the transfer position adjusting section 703_1 and the process condition adjusting section 703_2.

[0084] <An example of the weights of each component before adjustment processing> Next, a specific example of the weight of each component calculated by the formulation unit 702 before the adjustment process will be described. Fig. 11 is a diagram showing an example of the film thickness measurement result before the adjustment process and the weight of each component of the Zernike polynomial.

[0085] 11(a) shows an example of a film thickness measurement result before performing a process for adjusting the transfer position and a process for adjusting the process conditions of the substrate W. The example of Fig. 11(a) shows that the center positions of the concentric circles of the concentric film thickness distribution are shifted from the center position of the substrate W, and the film thickness varies and is non-uniform at each position on the substrate W.

[0086] FIG. 11(b) shows the weights of each component (for example, α2 to α) calculated when the film thickness measurement results shown in FIG. 11(a) are formulated using Zernike polynomials. 11 ) In the graph 1100 of FIG. 11(b), the horizontal axis represents each component (j=2 to 11) of the Zernike polynomial, and the vertical axis represents the weight of each component (for example, α2 to α 11 )

[0087] According to the graph 1100, among the components of the Zernike polynomial, the weights (α2, α3, α4) of the j=2 component, j=3 component, and j=4 component are large.

[0088] The j=2 component is a component corresponding to the combination of n=1 and m=1, and is a component related to the amount of deviation in the x direction from the center position of the substrate W (see the unit circle for n=1, m=1 in Figure 8(b)). A large weight for the j=2 component indicates a large amount of deviation in the x direction.

[0089] The j=3 component is a component corresponding to the combination of n=1 and m=-1, and is a component related to the amount of deviation in the y direction from the center position of the substrate W (see the unit circle for n=1, m=-1 in Figure 8(b)). A large weight for the j=3 component indicates a large amount of deviation in the y direction.

[0090] The j=4 component corresponds to the combination of n=2 and m=0, and is a component related to the process conditions (see the unit circle for n=2, m=0 in Figure 8(b)). The large weight of the j=4 component indicates that the film thickness varies concentrically from the center to the outside.

[0091] <Specific example of processing by the transfer position adjustment unit> Next, a specific example of processing by the transfer position adjustment unit 703_1 will be described. Here, a specific example of processing will be described in which the transfer position adjustment unit 703_1 directly calculates an adjustment amount for adjusting the transfer position of the substrate W using the weight of the first component. Fig. 12 is a diagram showing a specific example of processing by the transfer position adjustment unit. As shown in Fig. 12, the transfer position adjustment unit 703_1 further has a readout unit 1201 and an output unit 1202.

[0092] The reading unit 1201 acquires the weight of each component of the Zernike polynomial from the formulation unit 702. The reading unit 1201 extracts the weight of the first component from the acquired weights of each component, and compares it with the weight pattern 1210 stored in the adjustment amount storage unit 712.

[0093] As shown in FIG. 12, weighting pattern 1210 includes information items such as "weighting pattern of first component" and "adjustment amount pattern."

[0094] Various patterns for the combination of weights for the first component are stored in "weight pattern of first component." The example of weight pattern 1210 indicates that nine patterns, "W1" to "W9," are included. The nine patterns have the same items included in the first component, but different values ​​included in the first component.

[0095] For example, if the items included in the first component are "j=2 component" and "j=3 component", "W1" is the weight of the j=2 component = 0.2, the weight of the j=3 component = 0.3, "W2" is the weight of the j=2 component = 0.3, the weight of the j=3 component = 0.4, "W3" is the weight of the j=2 component = 0.4, the weight of the j=3 component = 0.5, ... "W9" is the weight of the j=2 component = 0.6, the weight of the j=3 component = 0.2, Each weight pattern is a different combination of values, such as:

[0096] The "adjustment amount pattern" stores "P1" to "P9" as adjustment amounts corresponding to "W1" to "W9" stored in the "weighting pattern of the first component." "P1" to "P9" include various combination patterns of the adjustment amount in the x direction and the adjustment amount in the y direction of the transfer position of the substrate W.

[0097] The reading unit 1201 searches the weight pattern 1210 for a weight pattern similar to the extracted weight pattern of the first component, and reads out an adjustment amount pattern corresponding to the searched weight pattern, thereby calculating the adjustment amount.

[0098] The output unit 1202 notifies the transfer device 120 of the adjustment amounts calculated by the readout unit 1201 (the adjustment amounts in the x and y directions of the transfer position of the substrate W).

[0099] <Specific example of processing by the process condition adjustment unit> Next, a specific example of processing by the process condition adjusting unit 703_2 will be described. Fig. 13 is a diagram showing a specific example of processing by the process condition adjusting unit. As shown in Fig. 13, the process condition adjusting unit 703_2 further includes a read unit 1301 and an output unit 1302.

[0100] The reading unit 1301 acquires the weight of each component of the Zernike polynomial from the formulation unit 702. The reading unit 1301 extracts the weight of the second component from the acquired weights of each component, and compares it with the weight pattern 1310 stored in the process condition storage unit 713.

[0101] As shown in FIG. 13, the weight pattern 1310 includes information items such as "weight pattern of second component" and "process condition pattern."

[0102] Various patterns for the combination of weights for the second component are stored in "Weight pattern of second component." The example of weight pattern 1310 indicates that nine patterns, "w1" to "w9," are included. The nine patterns have the same items included in the second component, but different values ​​included in the second component.

[0103] For example, if the items included in the second component are "j=4 component" and "j=9 component", "w1" is the weight of the j=4 component = 0.6, the weight of the j=9 component = -0.1, "w2" is the weight of the j=4 component = 0.5, the weight of the j=9 component = -0.2, "w3" is the weight of the j=4 component = 0.4, the weight of the j=9 component = -0.3, ... "w9" is the weight of the j=4 component = 0.7, the weight of the j=9 component = 1.0, Each weight pattern is a different combination of values, such as:

[0104] The "process condition pattern" stores "p1" to "p9" as process condition patterns corresponding to "w1" to "w9" stored in the "second component weighting pattern." "p1" to "p9" include various combination patterns of process conditions (e.g., target temperature, type of processing gas, gas flow rate, gas introduction time, etc.) when forming a film on the substrate W.

[0105] The reading unit 1301 searches the weighting patterns 1310 for a weighting pattern similar to the extracted weighting pattern of the second component, and reads out a process condition pattern corresponding to the searched weighting pattern, thereby adjusting the process conditions.

[0106] The output unit 1302 notifies the film forming processing apparatus 110 of the process conditions adjusted by the readout unit 1301 .

[0107] <Adjustment process flow> Next, the flow of the adjustment process by the film formation processing system 100 will be described. In the explanation, the flow of the adjustment process by the film formation processing system of the comparative example will be explained first to clarify the differences from the adjustment process by the film formation processing system of the comparative example. The film formation processing system of the comparative example refers to a system that performs the adjustment process to achieve a film thickness distribution that satisfies predetermined requirements in two stages: a process of adjusting the transfer position of the substrate W, and a process of adjusting the process conditions.

[0108] (1) Flow of adjustment process by the film formation processing system of the comparative example FIG. 14 is a flowchart showing the flow of the adjustment process performed by the film forming system of the comparative example.

[0109] In step S1401, the film forming processing system of the comparative example forms a film on a substrate W by the film forming processing apparatus.

[0110] In step S1402, in the film formation processing system of the comparative example, a film thickness measuring device measures the film thickness at each position on the substrate W on which a film has been formed. Furthermore, the adjustment processing device determines whether the amount of deviation between the center position of the concentric film thickness distribution and the center position of the substrate W is equal to or less than a predetermined threshold, based on the film thickness at each position on the substrate W measured by the film thickness measuring device. In step S1402, if it is determined that the amount of deviation is greater than the predetermined threshold (NO in step S1402), the process proceeds to step S1403.

[0111] In step S1403, in the film forming system of the comparative example, the adjustment processing device calculates the adjustment amount of the transfer position of the substrate W, and the transfer device adjusts the transfer position of the substrate W in accordance with the calculated adjustment amount.

[0112] In step S1404, the film formation processing system of the comparative example performs film formation on the substrate W by the film formation processing apparatus, and then returns to step S1402.

[0113] In the film forming system of the comparative example, the adjustment processing device repeats the processes of steps S1402 to S1404 until it determines in step S1402 that the amount of deviation is equal to or less than a predetermined threshold.

[0114] On the other hand, if it is determined in step S1402 that the deviation amount between the center position of the concentric film thickness distribution and the center position of the substrate W is equal to or less than the predetermined threshold value (YES in step S1402), the process proceeds to step S1405.

[0115] In step S1405, the film forming system of the comparative example has the adjustment processing device determine whether the variation in film thickness at each position on the substrate W measured by the film thickness measuring device is equal to or less than a predetermined threshold value. If it is determined in step S1405 that the variation is greater than the predetermined threshold value (NO in step S1405), the process proceeds to step S1406.

[0116] In step S1406, in the film forming system of the comparative example, the adjustment processing device adjusts the process conditions and notifies the film forming processing device of the adjusted process conditions.

[0117] In step S1407, the film formation processing system of the comparative example causes the film formation processing apparatus to form a film on the substrate W under the adjusted process conditions, and then the process returns to step S1405.

[0118] In the film forming system of the comparative example, the adjustment processing device repeats the processes of steps S1405 to S1407 until it determines in step S1405 that the variation is equal to or less than the predetermined threshold value.

[0119] On the other hand, if it is determined in step S1405 that the variation is equal to or less than the predetermined threshold (NO in step S1406), the adjustment process ends.

[0120] (2) Flow of Adjustment Process by Film Formation Processing System 100 FIG. 15 is a flowchart showing the flow of the adjustment process performed by the film forming system.

[0121] In step S1501, the film forming processing system 100 causes the film forming processing apparatus 110 to form a film on the substrate W.

[0122] In step S1502, the film formation processing system 100 has the film thickness measuring device 130 measure the film thickness at each position on the substrate W on which the film has been formed. The adjustment processing device 140 also determines whether the film thickness distribution on the substrate W measured by the film thickness measuring device 130 satisfies predetermined requirements. Specifically, the adjustment processing device 140: Whether the deviation between the center position of the concentric film thickness distribution and the center position of the substrate W is equal to or less than a predetermined threshold value; Whether the variation in film thickness at each position on the substrate W is equal to or less than a predetermined threshold value; If it is determined in step S1502 that the film thickness distribution does not satisfy the predetermined requirements (NO in step S1502), the process proceeds to step S1503.

[0123] In step S1503, the film forming processing system 100 calculates the weight of each component of the Zernike polynomial by the adjustment processing device 140 formulating the film thickness measurement result measured by the film thickness measurement device 130. Furthermore, the adjustment processing device 140 calculates an adjustment amount of the transfer position based on the weight of the first component, and the transfer device 120 adjusts the transfer position of the substrate W in accordance with the calculated adjustment amount.

[0124] In step S1504, the adjustment processing device 140 of the film forming system 100 adjusts the process conditions based on the weight of the second component, and notifies the film forming processing device 110 of the adjusted process conditions.

[0125] In step S1505, the film formation processing system 100 causes the film formation processing apparatus 110 to form a film on the substrate W transferred to the adjusted transfer position under the adjusted process conditions, and then returns to step S1502.

[0126] The film forming system 100 repeats the processes of steps S1502 to S1505 until the adjustment processing device 140 determines in step S1502 that the predetermined requirements are met.

[0127] On the other hand, if it is determined in step S1502 that the film thickness distribution satisfies the predetermined requirements (YES in step S1502), the adjustment process ends.

[0128] In this way, the film formation processing system 100 uses the film thickness measurement results obtained from one film formation run to calculate an index value that includes both information necessary for adjusting the substrate transfer position and information necessary for adjusting the process conditions. As a result, the film formation processing system 100 does not need to perform the adjustment work in two stages, as in the comparative film formation processing system. As a result, the film formation processing system 100 makes it possible to shorten the time required for the adjustment work in the film formation processing step.

[0129] <Example of weights for each component after adjustment processing> Next, a specific example of the weight of each component calculated by the formulation unit 702 after the adjustment process will be described. Fig. 16 is a diagram showing an example of the film thickness measurement result after the adjustment process and the weight of each component of the Zernike polynomial.

[0130] 16(a) shows an example of a film thickness measurement result after performing a process for adjusting the transfer position and a process for adjusting the process conditions of the substrate W. The example of Fig. 16(a) shows that the center position of the film thickness distribution coincides with the center position of the substrate W, and the film thickness at each position on the substrate W is uniform without variation.

[0131] Fig. 16(b) shows the weight of each component calculated when the film thickness measurement results shown in Fig. 16(a) are formulated using Zernike polynomials. In graph 1600 of Fig. 16(b), the horizontal axis represents each component of the Zernike polynomial, and the vertical axis represents the weight of each component.

[0132] According to graph 1600, the weights of each component of the Zernike polynomial are all small. For example, the j=2 component after the adjustment process is small compared to the j=2 component before the adjustment process ( FIG. 11( b) ). Therefore, it can be quantitatively understood that the deviation in the x direction of the center position of the film thickness distribution after the adjustment process from the center position of the substrate W is small.

[0133] Furthermore, the j=3 component after the adjustment process is smaller than the j=3 component before the adjustment process (FIG. 11(b)). Therefore, it can be quantitatively determined that the deviation in the y direction of the center position of the film thickness distribution after the adjustment process from the center position of the substrate W is small.

[0134] Furthermore, the j=4 component after the adjustment process is smaller than the j=4 component before the adjustment process (Figure 11(b)). Therefore, while the film thickness varied concentrically from the center to the outside before the adjustment process, it can be quantitatively understood that this film thickness variation was significantly improved after the adjustment process.

[0135] <Summary> As is clear from the above description, the adjustment processing device 140 according to the first embodiment: The film thickness measurement results of the substrate W on which a film is formed by the film forming processing apparatus 110 are obtained. ·Formulate the film thickness measurement results using Zernike polynomials. The transfer position of the substrate W and the process conditions of the film forming processing apparatus 110 are adjusted based on the weight of each component of the Zernike polynomial calculated during formulation.

[0136] In this way, the adjustment processing device 140 according to the first embodiment uses film thickness measurement results obtained from one film formation in the film formation process to calculate an index value including both information necessary for adjusting the substrate transfer position and information necessary for adjusting the process conditions. As a result, the adjustment processing device 140 according to the first embodiment eliminates the need to perform the adjustment work in two stages. As a result, the adjustment processing device 140 can shorten the time required for the adjustment work in the film formation process.

[0137] [Second embodiment] In the above first embodiment, the weight of each component of the Zernike polynomial is described as being used to adjust the transfer position of the substrate W and the process conditions of the film formation processing apparatus 110. However, the weight of each component of the Zernike polynomial may be output as an evaluation index of the film thickness distribution of the substrate W on which a film has been formed.

[0138] For example, the weight of the first component may be output as an evaluation index indicating the amount of deviation of the center position of the concentric circle of the concentric film thickness distribution from the center position of the substrate W. Furthermore, the weight of the second component may be output as an evaluation index indicating the variation in film thickness at each position on the substrate W.

[0139] In this way, by outputting the weight of each component as an evaluation index, the effect of the adjustment process can be objectively grasped, for example, from the difference between the value of the evaluation index before the adjustment process and the value of the evaluation index after the adjustment process.

[0140] Furthermore, when the weight of each component is used as an evaluation index, for example, when determining whether the film thickness distribution satisfies a predetermined requirement in the adjustment process (step S1502 in FIG. 15), Whether the weight pattern of the first component satisfies a predetermined condition; Whether the weight pattern of the second component satisfies a predetermined condition; may be determined.

[0141] In the first embodiment, the weight pattern 1210 indicating the correspondence between the weight pattern of the first component and the adjustment amount pattern is stored in the adjustment amount storage unit 712. However, the correspondence between the weight pattern of the first component and the adjustment amount pattern may be learned by a learning model. This makes it possible to calculate the adjustment amount by deriving the adjustment amount pattern from the weight pattern of the first component using the learned model.

[0142] Similarly, in the first embodiment, the weight pattern 1310 indicating the correspondence between the weight pattern of the second component and the process conditions is stored in the process condition storage unit 713. However, the correspondence between the weight pattern of the second component and the process conditions may be learned by a learning model. This makes it possible to adjust the process conditions by deriving the process conditions from the weight pattern of the second component using the learned model.

[0143] [Third embodiment] In the above embodiments, the process condition adjusting unit 703_2 has been described as adjusting the process conditions to eliminate variations in film thickness at each position and to achieve uniformity. However, the function of the process condition adjusting unit 703_2 is not limited to this, and the process condition adjusting unit 703_2 may adjust the process conditions, for example, to set the average value of film thickness at each position to a target value. Specifically, the "process condition pattern" of the weighting pattern 1310 may be configured to store process conditions for setting the average value of film thickness at each position to a target value.

[0144] Alternatively, the process condition adjusting unit 703_2 may adjust the process conditions so as to eliminate and uniformize the film thickness at each position and to set the average film thickness at each position to a target value. Specifically, the "process condition pattern" of the weighting pattern 1310 may be configured to store process conditions for eliminating and uniforming the film thickness at each position and to set the average film thickness at each position to a target value.

[0145] In other words, to determine whether the film thickness distribution satisfies a predetermined condition, Determining whether the deviation between the center position of the concentric film thickness distribution and the center position of the substrate W is equal to or less than a predetermined threshold value; and determining whether the variation in film thickness at each position on the substrate W is equal to or less than a predetermined threshold value, and determining whether the error between the average film thickness at each position on the substrate W and a target film thickness is equal to or less than a predetermined threshold value; Includes:

[0146] Therefore, the film thickness distribution that satisfies the specified requirements is as follows: The deviation between the center position of the concentric film thickness distribution and the center position of the substrate W is equal to or less than a predetermined threshold value, and Either or both of the following: the variation in film thickness at each position on the substrate W is below a predetermined threshold value, and the error between the average film thickness at each position on the substrate W and the target value is below a predetermined threshold value. Refers to...

[0147] [Fourth embodiment] In the above embodiments, Zernike polynomials are used as the orthogonal polynomials, but orthogonal polynomials other than Zernike polynomials may also be used.

[0148] In addition, although the above embodiments are formulated using the Fringe notation of Zernike polynomials, notations other than the Fringe notation may also be used. The notation to be used may be determined, for example, based on the type of film formation processing apparatus. Since the order of each component changes depending on the notation, for example, a notation in which the component whose value is close to the frequently occurring film thickness distribution appears earlier among the values ​​of each component at each position within the unit circle shown in FIG. 8(b) may be selected.

[0149] The type of film formation processing apparatus is not limited. For example, the film formation processing apparatus includes a film formation processing apparatus that forms a film by any film formation method (chemical vapor deposition, sputtering, atomic layer deposition, etc.). The film formation processing apparatus also includes a film formation processing apparatus that forms a film by any processing method (single wafer type, batch type, etc.).

[0150] In addition, in each of the above embodiments, the film formation processing apparatus 110 and the adjustment processing apparatus 140 are configured as separate entities, but the film formation processing apparatus 110 and the adjustment processing apparatus 140 may be configured as an integrated unit. Alternatively, part of the functions of the adjustment processing apparatus 140 may be realized in the film formation processing apparatus 110.

[0151] In addition, although the above embodiments have been described assuming that the adjustment processing device 140 is implemented by a single piece of hardware, the adjustment processing device 140 may be implemented by multiple pieces of hardware. For example, some or all of the functions of the adjustment processing device 140 may be implemented by any device in the film formation processing system 100.

[0152] The present invention is not limited to the configurations described in the above embodiments, but may be combined with other elements, etc. These aspects can be changed without departing from the spirit of the present invention, and can be appropriately determined depending on the application form. [Explanation of symbols]

[0153] 100: Film forming processing system 110: Film forming processing apparatus 120: Transfer equipment 130: Film thickness measuring device 140: Adjustment processing device 701: Film thickness measurement result acquisition unit 702 :Formulation part 703: Adjustment section 703_1: Transfer position adjustment section 703_2: Process condition adjustment unit 1001: Input section 1002: Calculation section 1003:Error calculation section 1004: Weight calculation unit 1201: Readout section 1202: Output section 1301: Readout section 1302: Output section

Claims

1. a film thickness measurement result acquisition unit that acquires film thickness measurement results of a substrate on which a film has been formed by a film formation processing apparatus; a formulation unit that formulates the film thickness measurement results using orthogonal polynomials; an adjusting unit that adjusts a transfer position of the substrate and process conditions of the film forming processing apparatus based on the weight of each component of the orthogonal polynomial calculated when formulating the orthogonal polynomial; An adjustment processing device having:

2. The adjustment unit a transfer position adjusting unit that adjusts a transfer position of the substrate based on a weight of a first component of the orthogonal polynomial calculated when formulating the orthogonal polynomial; a process condition adjusting unit that adjusts process conditions of the film forming processing apparatus based on the weight of the second component of the orthogonal polynomial calculated when formulating the orthogonal polynomial; The conditioning processor of claim 1 , comprising:

3. a weight of each component calculated when formulating the film thickness measurement result using an orthogonal polynomial, and outputting the weight as an evaluation index of the film thickness measurement result; The adjustment processing device according to claim 2 .

4. a weight of the first component calculated when formulating the film thickness measurement result using an orthogonal polynomial is output as an evaluation index indicating the amount of deviation between a center position of the film thickness distribution and a center position of the substrate; The adjustment processing device according to claim 3 .

5. a weight of the second component calculated when formulating the film thickness measurement result using an orthogonal polynomial, and outputting the weight as an evaluation index indicating the film thickness variation at each position on the substrate; The adjustment processing device according to claim 3 .

6. the orthogonal polynomials are Zernike polynomials; The adjustment processing device according to claim 3 .

7. The transfer position adjustment unit is calculating an adjustment amount for the transfer position of the substrate by referring to a storage unit in which a weight pattern of the first component and an adjustment amount pattern for the transfer position of the substrate are associated with each other and searching for a weight pattern similar to the weight pattern of the first component calculated when the film thickness measurement result is formulated using an orthogonal polynomial; The adjustment processing device according to claim 2 .

8. The process condition adjusting unit a storage unit storing a correspondence between the weight pattern of the second component and the process condition pattern of the film formation processing apparatus, and a weight pattern similar to the weight pattern of the second component calculated when the film thickness measurement result is formulated using an orthogonal polynomial is searched for, thereby adjusting the process conditions; The adjustment processing device according to claim 2 .

9. The transfer position adjustment unit is calculating an adjustment amount of the transfer position of the substrate using a trained model in which a correspondence relationship between a weight pattern of the first component and an adjustment amount pattern of the transfer position of the substrate has been trained; The adjustment processing device according to claim 2 .

10. The process condition adjusting unit adjusting the process conditions using a trained model in which a correspondence relationship between the weight pattern of the second component and the process condition pattern of the film formation processing apparatus has been trained; The adjustment processing device according to claim 2 .

11. The adjustment unit determining whether the film thickness distribution satisfies a predetermined condition, and if it is determined that the film thickness distribution does not satisfy the predetermined requirement, adjusting the transfer position of the substrate and the process conditions of the film formation processing apparatus; The conditioning processing device according to claim 1 .

12. Determining whether the film thickness distribution satisfies a predetermined condition includes: determining whether or not the deviation between the center position of the film thickness distribution and the center position of the substrate is equal to or less than a predetermined threshold value; and determining whether or not the variation in film thickness at each position on the substrate is equal to or less than a predetermined threshold, and determining whether or not the error between the average film thickness at each position on the substrate and a target value is equal to or less than a predetermined threshold; Contains, The conditioning processing device of claim 11 .

13. Determining whether the film thickness distribution satisfies a predetermined condition includes: determining whether a weight pattern of each component of the orthogonal polynomial satisfies a predetermined requirement; The conditioning processing device of claim 11 .

14. a film forming processing apparatus; A transfer device; a film thickness measuring device; The adjustment processing device according to claim 1 ; A film forming processing system having the above structure.

15. acquiring a film thickness measurement result of the substrate on which a film has been formed by the film formation processing apparatus; formulating the film thickness measurement results using orthogonal polynomials; adjusting a transfer position of the substrate and process conditions of the film forming processing apparatus based on the weight of each component of the orthogonal polynomial calculated when formulating the equation; The computer performs the adjustment processing method.

16. acquiring a film thickness measurement result of the substrate on which a film has been formed by the film formation processing apparatus; formulating the film thickness measurement results using orthogonal polynomials; adjusting a transfer position of the substrate and process conditions of the film forming processing apparatus based on the weight of each component of the orthogonal polynomial calculated when formulating the equation; An adjustment processing program for causing a computer to execute the above.

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