Plasma processing apparatus and upper electrode

Abstract

To provide a plasma processing apparatus and an upper electrode that supply radicals to a processing space while suppressing deactivation of radicals.SOLUTION: A plasma processing apparatus includes a processing container, a mounting table provided in the processing container, a plasma generation unit disposed above and opposite to the mounting table, and a processing space formed between the plasma generation unit and the mounting table. The plasma generation unit includes: a ground electrode having a plurality of concave portions, the ground electrode being disposed to face the mounting table, the ground electrode having a shield portion configured to block a lower surface of the concave portion, and a side wall of the concave portion; and an application electrode having an insertion portion inserted into the concave portion with a space between the shield portion and the side wall. The shield portion has a radical supply hole for supplying radicals in plasma generated in the concave portion to the processing space.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a plasma processing apparatus and an upper electrode. [Background technology]

[0002] Patent Document 1 discloses a film forming apparatus having a plurality of partition walls above a mounting table, in which a partition wall connected to a high-frequency power supply unit serves as an application electrode, a partition wall connected to a grounded power supply unit serves as a ground electrode, parallel electrodes are formed, and the space formed between the partition walls serves as a plasma generation space. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2013-51370 A Summary of the Invention [Problem to be solved by the invention]

[0004] In one aspect, the present disclosure provides a plasma processing apparatus and an upper electrode that suppress deactivation of radicals and supply radicals to a processing space. [Means for solving the problem]

[0005] In order to solve the above problem, according to one aspect, there is provided a plasma processing apparatus comprising: a processing vessel; a mounting table provided in the processing vessel; a plasma generation unit arranged above and facing the mounting table; and a processing space formed between the plasma generation unit and the mounting table, wherein the plasma generation unit is arranged facing the mounting table and has a ground electrode having a plurality of recesses, the ground electrode having recesses constituted by a shielding portion arranged to cover a lower surface of the recesses and a side wall of the recesses; and an application electrode having an insertion portion inserted into the recesses with a gap between the shielding portion and the side wall, and the shielding portion has a radical supply hole that supplies radicals in plasma generated in the recesses to the processing space. [Effects of the Invention]

[0006] According to one aspect, it is possible to provide a plasma processing apparatus and an upper electrode that supply radicals to a processing space while suppressing deactivation of the radicals. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is an example of a vertical cross-sectional view of a plasma processing apparatus 1 according to an embodiment of the present invention. [Figure 2] FIG. 2 is an example of a longitudinal cross-sectional view of a plasma generation unit. [Figure 3] 1 is a diagram showing an example of a plasma generating unit viewed from the side of the mounting table. [Figure 4] FIG. 10 is another example of a longitudinal cross-sectional view of the plasma generating unit. [Figure 5] FIG. 10 is another example of a longitudinal cross-sectional view of the plasma generating unit. [Figure 6] FIG. 10 is another example of a longitudinal cross-sectional view of the plasma generating unit. [Figure 7] FIG. 10 is another example of a longitudinal cross-sectional view of the plasma generating unit. [Figure 8] 1 is a horizontal cross-sectional view of a plasma generation unit. [Figure 9] FIG. 10 is another example of a horizontal cross-sectional view of the plasma generating unit. [Figure 10] 1 is a plan view of a plasma generating unit viewed from above; [Figure 11]FIG. 11 is an example of a vertical cross-sectional view of the plasma generating section in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0009] [Plasma processing device 1] An example of a plasma processing apparatus 1 according to this embodiment will be described with reference to Figs. 1 to 3. Fig. 1 is an example of a vertical cross-sectional view of the plasma processing apparatus 1 according to this embodiment. Fig. 2 is an example of a vertical cross-sectional view of the plasma generating unit 5. Fig. 3 is an example of a view of the plasma generating unit 5 as seen from the side of the mounting table 3.

[0010] Here, the plasma processing apparatus 1 will be described as an example of a film forming apparatus that forms a film (e.g., a SiN film) on a substrate W by using plasma of a first processing gas (e.g., SiH4) and a second processing gas (e.g., NH3) by a PECVD (Plasma-Enhanced Chemical Vapor Deposition) method. However, the plasma processing apparatus 1 is not limited to this, and may also be a film forming apparatus that forms a film on a substrate W by, for example, a PEALD (Plasma Enhanced Chemical Vapor Deposition) method.

[0011] The plasma processing apparatus 1 includes a substantially cylindrical airtight processing chamber 2. An exhaust chamber 21 is provided in the center of the bottom wall of the processing chamber 2.

[0012] The exhaust chamber 21 has, for example, a substantially cylindrical shape that protrudes downward. An exhaust flow path 22 is connected to the exhaust chamber 21, for example, at a side surface of the exhaust chamber 21.

[0013] An exhaust unit 24 is connected to the exhaust flow path 22 via a pressure adjustment unit 23. The pressure adjustment unit 23 includes a pressure adjustment valve such as a butterfly valve. The exhaust flow path 22 is configured so that the pressure inside the processing vessel 2 can be reduced by the exhaust unit 24. A transfer port 25 is provided on the side of the processing vessel 2. The transfer port 25 is configured to be freely opened and closed by a gate valve 26. The substrate W is loaded and unloaded between the processing vessel 2 and a transfer chamber (not shown) via the transfer port 25.

[0014] A mounting table 3 for holding the substrate W substantially horizontally is provided within the processing chamber 2. The mounting table 3 is formed in a substantially circular shape in a plan view and is supported by a support member 31. A substantially circular recess 32 for mounting the substrate W, for example, having a diameter of 300 mm, is formed in the surface of the mounting table 3. The recess 32 has an inner diameter that is slightly larger (for example, about 1 mm to 4 mm) than the diameter of the substrate W. The depth of the recess 32 is configured to be substantially the same as the thickness of the substrate W. The mounting table 3 is made of a ceramic material such as aluminum nitride (AlN). Alternatively, the mounting table 3 may be made of a metal material such as nickel (Ni). Instead of the recess 32, a guide ring for guiding the substrate W may be provided around the periphery of the surface of the mounting table 3.

[0015] A grounded lower electrode 33 is embedded in the mounting table 3. A temperature adjustment mechanism 34 is embedded below the lower electrode 33. The temperature adjustment mechanism 34 adjusts the temperature of the substrate W placed on the mounting table 3 to a set temperature based on a control signal from the control unit 9. If the mounting table 3 is entirely made of metal, the entire mounting table 3 functions as the lower electrode, and the lower electrode 33 does not need to be embedded in the mounting table 3. Note that, although an example in which the lower electrode 33 is grounded will be described, this is not limiting. The lower electrode 33 may be connected to a high-frequency power supply (RF power supply) and bias RF power may be applied thereto. Alternatively, the lower electrode 33 may be connected to a direct-current power supply (DC power supply) and bias DC power may be applied thereto. Ions may be attracted to the substrate W from the generated plasma by applying bias power (bias RF power, bias DC power) to the lower electrode 33.

[0016] The mounting table 3 is provided with a plurality of (e.g., three) lifting pins 41 for holding and raising and lowering the substrate W mounted on the mounting table 3. The lifting pins 41 may be made of, for example, ceramics such as alumina (Al2O3) or quartz. The lower ends of the lifting pins 41 are attached to a support plate 42. The support plate 42 is connected via a lifting shaft 43 to a lifting mechanism 44 provided outside the processing chamber 2.

[0017] The lifting mechanism 44 is installed, for example, at the bottom of the exhaust chamber 21. The bellows 45 is provided between the lifting mechanism 44 and an opening 211 for the lifting shaft 43 formed in the bottom surface of the exhaust chamber 21. The support plate 42 may be shaped so that it can be raised and lowered without interfering with the support member 31 of the mounting table 3. The lifting pins 41 are configured to be able to be raised and lowered between the upper side and the lower side of the surface of the mounting table 3 by the lifting mechanism 44. In other words, the lifting pins 41 are configured to be able to protrude from the top surface of the mounting table 3.

[0018] A plasma generation unit (plasma generation chamber) 5 is provided on a ceiling wall 27 of the processing vessel 2 via an insulating member 28. The plasma generation unit 5 is disposed above and facing the mounting table 3 having a lower electrode 33, and is also referred to as an upper electrode. The plasma generation unit 5 also has a ground electrode 51 and an application electrode 52, which will be described later, and is also referred to as an electrode assembly. A processing space S is formed between the plasma generation unit 5 and the mounting table 3.

[0019] The plasma generating unit 5 includes a grounded electrode 51 (also called a GND electrode), an application electrode 52 (also called a HOT electrode) to which high-frequency power (source RF power) for generating plasma is applied, and an insulating member 53 arranged between the grounded electrode 51 and the application electrode 52.

[0020] The ground electrode 51 is made of a conductive material (e.g., aluminum with an anodized surface) and has a substantially circular disk shape. The ground electrode 51 has a gas supply path 511 and first gas supply holes 512. The first gas supply holes 512 are formed in the bottom surface of the ground electrode 51 (the surface in contact with the processing space S and facing the mounting table 3). The gas supply path 511 is connected to a first processing gas supply source 61 via a gas line 62. The first processing gas supply source 61 includes a first processing gas supply source, a mass flow controller, and a valve (none of which are shown). The first processing gas includes, for example, a material gas. The material gas is a processing gas, such as SiH4, that suppresses excessive dissociation by plasma. The first processing gas (e.g., SiH4) supplied from the first processing gas supply source 61 is supplied into the processing space S from the first gas supply holes 512 via the gas line 62 and the gas supply path 511.

[0021] The ground electrode 51 also has a recess 513 that is open at the top. An inner peripheral side surface 513S of the recess 513 is shaped, for example, as a cylindrical surface. The recess 513 of the ground electrode 51 also has a shielding portion 514 that is provided to close the bottom surface of the recess 513. The shielding portion 514 also has a radical supply hole 515 that is a through-hole that penetrates from the inside of the recess 513 to the processing space S.

[0022] The shielding portion 514 may be formed integrally with the main body of the ground electrode 51 (a disk-shaped member in which the gas supply path 511, the first gas supply hole 512, and the recess 513 are formed). That is, the recess 513 is a bottomed recess formed from the upper surface of the ground electrode 51 (the side on which the application electrode 52 is disposed), and the bottom wall of the recess serves as the shielding portion 514. The radical supply hole 515 is provided in the bottom wall of the recess that serves as the shielding portion 514.

[0023] Furthermore, the shielding portion 514 may be formed separately from the main body of the ground electrode 51 (a disk-shaped member in which the gas supply path 511, the first gas supply hole 512, and the recess 513 are formed). That is, the recess 513 may be a through-hole that penetrates from the top surface (the side on which the application electrode 52 is disposed) of the ground electrode 51 to the bottom surface (the surface in contact with the processing space S, the surface facing the mounting table 3), and the shielding portion 514 having the radical supply hole 515 may be disposed on the lower surface side of this through-hole.

[0024] The application electrode 52 is made of a conductive material (for example, aluminum whose surface is anodized). The application electrode 52 has a gas supply path 521 and a second gas supply hole 522. The gas supply path 521 is connected to a second process gas supply source 63 via a gas line 64. The second process gas supply source 63 includes a second process gas supply source, a mass flow controller, and a valve (none of which are shown). The second process gas includes, for example, a reactive gas. The reactive gas is a process gas that is dissociated by plasma, such as NH3. The second process gas (for example, NH3) supplied from the second process gas supply source 63 is supplied via the gas line 64 and the gas supply path 521 to the inside of the recess 513 through the second gas supply hole 522.

[0025] The application electrode 52 also has an insertion portion 523 and a base portion 524. An outer peripheral side surface 523S of the insertion portion 523 is formed, for example, as a cylindrical surface. Here, the height of the outer peripheral side surface 523S of the insertion portion 523 exposed in the recess 513 is formed shorter than the height of the inner peripheral side surface 513S of the recess 513. The insertion portion 523 is inserted into the recess 513. The second gas supply hole 522 is formed in a bottom surface 523B of the insertion portion 523. The insertion portion 523 and the recess 513 of the ground electrode 51 are also disposed with a gap between them.

[0026] The base portion 524 is connected to the insertion portion 523 and supports the insertion portion 523. An insulating member 53 is disposed between the base portion 524 and the ground electrode 51. This insulates the ground electrode 51 from the application electrode 52.

[0027] An RF power supply 55 is connected to the base 524 of the application electrode 52 via a matching box 551. The frequency of the RF power supply 55 is, for example, 400 kHz to 2.45 GHz. By supplying RF power from the RF power supply 55 to the application electrode 52, an RF electric field is generated between the application electrode 52 and the ground electrode 51. As a result, a space between the inner peripheral side surface 513S of the ground electrode 51 and the outer peripheral side surface 523S of the application electrode 52, which face each other, is used as a plasma generation space P1, and capacitively coupled plasma (CCP) is generated in this space. In addition, an RF electric field is also generated between the bottom surface 523B of the application electrode 52 and the ground potential (the side wall of the recess 513, the shielding portion 514), and capacitively coupled plasma is also generated on the side of the bottom surface 523B of the application electrode 52 as a plasma generation space P2.

[0028] As a result, ions and radicals of the second processing gas are generated in the recess 513. The radicals generated in the plasma generation spaces P1 and P2 are supplied into the processing space S through the radical supply holes 515.

[0029] The plasma processing apparatus 1 includes a control unit 9. The control unit 9 is, for example, a computer and includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), an auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or the auxiliary storage device, and controls the operation of the plasma processing apparatus 1. The control unit 9 may be provided inside or outside the plasma processing apparatus 1. If the control unit 9 is provided outside the plasma processing apparatus 1, the control unit 9 can control the plasma processing apparatus 1 via communication means such as wired or wireless.

[0030] The first and second process gases are not limited to those described above. The first process gas may be any of TiCl4, LTO520 (Si precursor), TSA (Si precursor), DCS (Si precursor), etc. The second process gas may be any of NH3, H2, N2, O2, etc. The film formed on the substrate W may be any of Ti, TiN, TiO2, SiO2, SiN, etc.

[0031] According to this configuration, the first processing gas (e.g., SiH4) supplied from the first processing gas supply source 61 is supplied into the processing space S from the first gas supply holes 512 via the gas line 62 and the gas supply path 511. This makes it possible to suppress excessive dissociation of the first processing gas by the plasma.

[0032] A second process gas (e.g., NH3) supplied from a second process gas supply source 63 is supplied through a gas line 64, a gas supply path 521, and a second gas supply hole 522 into the recess 513. A space between the inner peripheral side surface 513S of the recess 513 of the ground electrode 51 and the outer peripheral side surface 523S of the insertion portion 523 of the application electrode 52, which face each other, is defined as a plasma generation space P1, and plasma of the second process gas is generated in this plasma generation space P1. Plasma of the second process gas is also generated in a plasma generation space P2.

[0033] Here, ions generated in the plasma generation spaces P1 and P2 move horizontally along the electric field. In addition, ions moving from the application electrode 52 to the lower electrode 33 are blocked by the shielding portion 514. This prevents ions from passing through the radical supply holes 515 and being supplied to the processing space S.

[0034] Moreover, the radicals generated in the plasma generating spaces P1 and P2 are supplied to the processing space S from the recess 513 through the radical supply holes 515.

[0035] 3, when the plasma generating unit 5 is viewed from the mounting table 3, the shielding unit 514 is arranged so as to cover the bottom surface 523B of the insertion unit 523 of the application electrode 52. In addition, it is preferable that the area of ​​the shielding unit 514 is larger than the area of ​​the bottom surface 523B of the insertion unit 523 of the application electrode 52.

[0036] The radical supply hole 515 is preferably provided in a location where the electric field from the applying electrode 52 to the ground potential (the side wall of the recess 513, the shielding portion 514) is weak. That is, it is preferable to provide the radical supply hole 515 near the intersection of the inner circumferential side surface 513S and the shielding portion 514, where the electric field is particularly weak. This makes it possible to suppress the electric field leaking from the recess 513 to the processing space S through the radical supply hole 515.

[0037] Specifically, the radical supply hole 515 is formed within the range of an annular region between the outer peripheral side surface 523S and the inner peripheral side surface 513S when the plasma generating unit 5 is viewed from the mounting table 3. More preferably, the radical supply hole 515 is formed on a side of the annular region between the outer peripheral side surface 523S and the inner peripheral side surface 513S, closer to the inner peripheral side surface 513S than the outer peripheral side surface 523S when the plasma generating unit 5 is viewed from the mounting table 3. In particular, it is preferable that the circular shape of the radical supply hole 515 be in contact with (inscribed in) the circular shape of the inner peripheral side surface 513S when the plasma generating unit 5 is viewed from the mounting table 3.

[0038] Here, the distance from the outer peripheral side surface 523S to the inner peripheral side surface 513S is defined as La. The diameter of the radical supply hole 515 is defined as Lb. The diameter Lb of the radical supply hole 515 is preferably within a range of 0.5 La or more and 0.8 La or less. Setting the diameter Lb of the radical supply hole 515 to 0.8 La or less suppresses leakage of an electric field from the recess 513 to the processing space S via the radical supply hole 515. Also, ions supplied from the recess 513 to the processing space S are suppressed. Setting the diameter Lb of the radical supply hole 515 to 0.5 La or more enables radicals to be suitably supplied from the recess 513 to the processing space S, and suppresses deactivation of the radicals.

[0039] The height (distance) from the bottom surface 523B of the insertion portion 523 of the applying electrode 52 to the upper surface of the shielding portion 514 is defined as H1. The height H1 is preferably equal to or greater than La. The height H1 is preferably within the range of equal to or greater than La and equal to or less than 2La. This allows plasma to be generated mainly in the plasma generation space P1 rather than in the plasma generation space P2. In addition, ions supplied from the recess 513 to the processing space S are suppressed.

[0040] The configuration of the plasma generating unit 5 is not limited to the configuration shown in Figures 2 and 3. Other configuration examples of the plasma generating unit 5 will be described with reference to Figures 4 to 7.

[0041] Fig. 4 is another example of a vertical cross-sectional view of the plasma generating unit 5. In the example shown in Fig. 2, the second gas supply holes 522 are formed in the bottom surface 523B of the insertion part 523, but the present invention is not limited to this. As shown in Fig. 4, the second gas supply holes 522 may be formed in the outer peripheral side surface 523S of the insertion part 523. With this configuration, the pressure of the second processing gas in the plasma generating space P1 can be increased, and the second processing gas can be suitably supplied to the plasma generating space P1.

[0042] 5 is another example of a longitudinal cross-sectional view of the plasma generating unit 5. As shown in FIG. 5, the inner peripheral side surface 513S of the recess 513 is covered with a quartz member 54. The quartz member 54 may be configured such that a cylindrical quartz member is inserted into the recess 513, or such that a thermally sprayed film of the quartz member is formed on the inner peripheral side surface 513S of the recess 513. Furthermore, an Al2O3 film, a BN material, or the like may be used instead of the quartz member 54. With such a configuration, it is possible to suppress deactivation of radicals of the second process gas formed in the plasma generation spaces P1 and P2.

[0043] FIG. 6 is another example of a vertical cross-sectional view of the plasma generating unit 5. As shown in FIG. 6, the inner peripheral side surface 513S of the recess 513 is covered with a quartz member 54. Furthermore, a shielding unit 514A made of quartz may be arranged instead of the shielding unit 514. In this case, the shielding unit 514A is provided separately from the main body of the ground electrode 51 (the gas supply path 511, the first gas supply hole 512, and the disk-shaped metal member in which the recess 513 is formed), and the shielding unit 514A is fitted into the recess 513 to form the ground electrode 51. With this configuration, it is possible to further suppress deactivation of radicals of the second process gas formed in the plasma generation spaces P1 and P2.

[0044] Fig. 7 is another example of a vertical cross-sectional view of the plasma generating part 5. As shown in Fig. 7, when the distance H2 from the bottom surface 523B of the insertion part 523 to the bottom surface of the ground electrode 51 is sufficient, the shielding part 514 may be omitted.

[0045] Specifically, it is preferable that the distance H2 from the bottom surface 523B of the insertion portion 523 to the bottom surface of the ground electrode 51 is at least twice as long as the distance La between the outer peripheral side surface 523S and the inner peripheral side surface 513S (H2≧2La). By ensuring a sufficiently long distance H2 in this manner, leakage of the electric field near the opening of the recess 513 can be suppressed, and ions supplied to the processing space S can be suppressed. Furthermore, by omitting the shielding portion 514, the radicals supplied to the processing space S can be increased, and deactivation of the radicals before they are supplied from the recess 513 to the processing space S can be suppressed.

[0046] 1 to 7, the configuration of the plasma generating unit 5 has been described as one in which RF power is supplied to the application electrode 52 from one RF power source 55, but the present invention is not limited to this configuration. Other examples of the configuration of the plasma generating unit 5 will be further described with reference to FIGS. 8 to 11.

[0047] Fig. 8 is an example of a horizontal cross-sectional view of the plasma generation unit 5. Here, the horizontal cross-sectional view is shown at a height position where the inner peripheral side surface 513S and the outer peripheral side surface 523S face each other. As shown in Fig. 8, the recess 513 of the ground electrode 51 and the insertion portion 523 of the application electrode 52 inserted into the recess 513 may be circular in plan view.

[0048] FIG. 9 is another example of a horizontal cross-sectional view of the plasma generation unit 5. Here, the horizontal cross-sectional view is shown at a height position where the inner peripheral side surface 513S and the outer peripheral side surface 523S face each other. As shown in FIG. 9, the recess 513 of the ground electrode 51 may have a groove shape extending along an arc in a plan view, and the insertion portion 523 of the application electrode 52 inserted into the recess 513 may have a fin shape extending along an arc in a plan view. Furthermore, the insertion portion 523 may be divided in the circumferential direction (divided into four in the example of FIG. 9) and in the radial direction (divided into three in the example of FIG. 9). Each divided insertion portion 523 may be configured to be able to supply RF power individually.

[0049] FIG. 10 is an example of a plan view of the plasma generating unit 5 as seen from above. FIG. 11 is an example of a vertical cross-sectional view of the plasma generating unit 5 in FIG. 10. The insulating member 53 has protrusions 531, which divide the application electrode 52 in the radial direction (into three in the example of FIG. 10). In this way, RF power can be supplied individually to each divided region of the application electrode 52. Therefore, the distribution of radicals supplied from the plasma generating unit 5 to the processing space S can be controlled. Note that in the example of FIG. 10, the case where the application electrode 52 is divided in the radial direction has been described as an example, but this is not limiting and the application electrode 52 may be divided in the circumferential direction.

[0050] The above describes a plasma processing apparatus 1 that supplies radicals to a substrate W. However, the present disclosure is not limited to the above-described embodiments, and various modifications and improvements are possible within the scope of the gist of the present disclosure as set forth in the claims. [Explanation of symbols]

[0051] 1. Plasma processing equipment 2. Processing vessel 3. Mounting table 5. Plasma generation unit 9 Control Unit 51 Ground electrode 511 Gas supply line 512 First gas supply hole 513 recess 513S inner side 514,514A Shielding part 515 Radical supply hole 52 Applied electrode 521 Gas supply line 522 Second gas supply hole 523 Insertion part 523S outer periphery side 523B Bottom 524 base 53 Insulating materials 531 Convex 54 Quartz components 55 RF power supply 551 Matching box 61 First processing gas supply source 62 Gas Line 63 Second processing gas supply source 64 Gas Line W substrate S Processing space P1, P2 Plasma generation space

Claims

1. A processing vessel; a mounting table provided in the processing vessel; a plasma generating unit disposed above and facing the mounting table; a processing space formed between the plasma generating unit and the mounting table, The plasma generating unit is a ground electrode disposed opposite the mounting table and having a plurality of recesses, the ground electrode having the recesses each composed of a shielding portion provided to close a bottom surface of the recesses and a side wall of the recesses; an application electrode having an insertion portion that is inserted into the recess with a gap between the shielding portion and the side wall; the shielding portion has a radical supply hole that supplies radicals in the plasma generated in the recess to the processing space. Plasma processing equipment.

2. the radical supply hole is formed within a range of an annular region between an outer peripheral side surface of the insertion portion and an inner peripheral side surface of the recessed portion when the plasma generation portion is viewed from the mounting table. The plasma processing apparatus according to claim 1 .

3. the radical supply hole is formed in the annular region on a side closer to an inner peripheral side surface of the recess than to an outer peripheral side surface of the insertion portion when the plasma generation unit is viewed from the mounting table. The plasma processing apparatus according to claim 2 .

4. When the plasma generating unit is viewed from the mounting table, the radical supply hole is in contact with an inner peripheral side surface of the recessed portion. The plasma processing apparatus according to claim 3 .

5. La is the distance from the outer peripheral side surface of the insertion portion to the inner peripheral side surface of the recess, The diameter of the radical supply hole is Lb, the diameter Lb of the radical supply hole is in the range of 0.5La or more and 0.8La or less; The plasma processing apparatus according to claim 1 .

6. When the plasma generating unit is viewed from the mounting table, a bottom surface of the insertion unit is covered with the shielding unit. The plasma processing apparatus according to claim 1 .

7. La is the distance from the outer peripheral side surface of the insertion portion to the inner peripheral side surface of the recess, The height from the bottom surface of the insertion portion to the shielding portion is H1, The height H1 from the bottom surface of the insertion portion to the shielding portion is equal to or greater than the distance La. The plasma processing apparatus according to claim 1 .

8. the ground electrode has a first gas supply hole through which a first processing gas is supplied into the processing space; the insertion portion of the applying electrode has a second gas supply hole for supplying a second process gas into the recess. The plasma processing apparatus according to claim 1 .

9. The inner peripheral side surface of the recess is covered with a quartz member. The plasma processing apparatus according to claim 1 .

10. The shielding portion is made of a quartz material. The plasma processing apparatus according to claim 9 .

11. The insertion portion is configured to be able to supply high-frequency power individually to each of a plurality of regions divided in the radial direction; The plasma processing apparatus according to claim 1 .

12. An upper electrode of a plasma processing apparatus that is disposed above and facing the mounting table, a ground electrode disposed opposite the mounting table and having a plurality of recesses, the ground electrode having the recesses each composed of a shielding portion provided to close a bottom surface of the recesses and a side wall of the recesses; an applied voltage having an insertion portion inserted into the recess with a gap between the shielding portion and the sidewall; the shielding portion has a radical supply hole for supplying radicals in the plasma generated in the recess to a processing space of the plasma processing apparatus. Upper electrode.

Images