Showerhead assembly and substrate processing system for improving deposition thickness uniformity - Patents.com

Abstract

The showerhead assembly includes a showerhead having an upper portion including gas channels extending in a first direction and having a first width in a second direction. The lower portion is connected to the upper portion and includes a faceplate including a plurality of gas through holes extending vertically through the faceplate in the first direction, and a baffle plate disposed on a plurality of posts above the faceplate and below the outlets of the gas channels. A gas plenum is defined between the upper and lower portions and extends in the second direction and is in fluid communication with the gas channels. The showerhead assembly includes a backside gas system that supplies gas to a bellows volume defined by a bellows disposed about the upper portion of the showerhead. First and second annular gas flows are provided across an exterior surface of the showerhead.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No. 63 / 323,710, filed March 25, 2022, and U.S. Provisional Application No. 63 / 325,112, filed March 29, 2022. The entire disclosures of the above-referenced applications are incorporated herein by reference. [Technical field]

[0002] The present disclosure relates to substrate processing systems, and more particularly, to showerheads and showerhead assemblies for substrate processing systems.

[0003] The background description provided herein is intended to provide a general overview of the contents of the present disclosure. Work by the currently named inventors within the scope of what is described in this Background section, as well as aspects of the description that may not otherwise be regarded as prior art at the time of filing, are not admitted, expressly or impliedly, as prior art against the present disclosure.

[0004] Substrate processing systems are used to perform processes on substrates, such as semiconductor wafers. Examples of processes include deposition, etching, cleaning, and / or other processes. During deposition of a film on the substrate, process gases are delivered to the processing chamber and a plasma can be struck in the processing chamber to initiate a chemical reaction.

[0005] It is important that the deposition process be uniform from one substrate to another and from one portion of the substrate to another. For example, some deposition processes may produce films that have different thicknesses from the center of the substrate to the edge of the substrate. For example, a substrate may be center-low or center-high relative to the edge. Non-uniform film thickness may be caused by variations in gas delivery, varying substrate temperature, variations in plasma conditions across the substrate, and / or other factors. Summary of the Invention

[0006] The showerhead for a substrate processing system includes an upper portion including a gas channel extending in a first direction and having a first width in a second direction orthogonal to the first direction. The lower portion includes a faceplate connected to the upper portion and including a plurality of gas through holes extending vertically through the faceplate in the first direction, and a baffle plate disposed on a plurality of posts above the faceplate and below the outlets of the gas channels. The baffle plate includes a plurality of baffle orifices and has a second width in the second direction in a range of 1.25 to 3 times the first width. A gas plenum is defined between the upper portion and the lower portion, extends in the second direction, and is in fluid communication with the gas channel.

[0007] In other features, each of the plurality of baffle orifices is offset in position from one of the plurality of gas through holes located below the baffle plate in the first direction. The plurality of baffle orifices are symmetrically disposed about a center of the baffle plate. The second width is in the range of 1.75 to 2.5 times the first width.

[0008] In other features, the plurality of gas through holes have a first diameter and the plurality of baffle orifices have a second diameter greater than the first diameter. The second diameter is in a range of 1.2 to 6 times greater than the first diameter. The second diameter is in a range of 1.5 to 3 times greater than the first diameter.

[0009] In other features, the upper portion includes a stem portion, a first conical portion extending from the stem portion, and a second conical portion extending from the first conical portion and including a radially outer edge attached to the lower portion.

[0010] In other features, a side of the first conical portion forms a first acute angle with a side of the stem portion. A side of the second conical portion forms a second acute angle with a side of the stem portion. The first acute angle is less than the second acute angle.

[0011] In other features, P posts are connected between the faceplate and the second conical portion of the upper portion, where P is an integer greater than 1. P is in the range of 8 to 24. P is equal to 12. The P posts are arranged in a circle. The P posts are arranged between a first radius corresponding to a radially inner edge of the second conical portion and a second radius corresponding to a radially outer edge of the second conical portion.

[0012] In other features, the gas channel has a first radius. The substrate-facing surface of the lower portion includes a rounded portion extending from the first radius to a second radius. The first horizontal portion extends from the second radius to a third radius. The tapered portion extends from the third radius to a fourth radius. The second horizontal portion extends from the fourth radius to a fifth radius.

[0013] In other features, the third radius is in a range of 0.75 to 2.5 times the second width. The baffle plate is disposed at 25% to 75% of the distance between the first horizontal portion and the face plate in the first direction.

[0014] In other features, P access holes pass through the second conical portion of the upper portion. P posts connect the faceplate to the second conical portion and extend into the P access holes, where P is an integer greater than 1. At least one of the baffle orifices at least partially overlaps at least one of the gas through holes in the first direction. At least one of the baffle orifices completely overlaps at least one of the gas through holes in the first direction.

[0015] In other features, the gas through holes in the faceplate are arranged in a first zone and a second zone, a first plurality of gas through holes in the first zone have a first hole density, and a second plurality of gas through holes arranged in the second zone have a second hole density, the second hole density being greater than the first hole density.

[0016] In other features, the first zone extends to a first radius and the second zone extends from the first radius to a second radius, the first radius being greater than or equal to 0.7 times the second radius.

[0017] In other features, the backside gas system is configured to supply gas in a downward and radially outward direction along the stem portion, the first conical portion, and the second conical portion.

[0018] The substrate processing system includes a showerhead and a processing chamber including a top surface defining a cavity. An annular support is disposed around the stem portion and in the cavity in the top surface and includes a radially inner surface and a radially outer surface. A first annular gap is formed between the radially outer surface of the annular support and the cavity in the top surface of the processing chamber. A second annular gap is formed between the radially inner surface of the annular support and the stem portion. A backside gas system supplies gas to the first annular gap and the second annular gap.

[0019] A method for depositing a film on a substrate includes delivering process gas to an exposed surface of the substrate using a showerhead disposed in a processing chamber. The showerhead includes an upper portion including gas channels configured to receive the process gas, extending in a first direction and having a first width in a second direction orthogonal to the first direction, a lower portion including a faceplate having a plurality of gas through-holes extending through the faceplate in the first direction, and a gas plenum defined between the upper and lower portions and extending in the second direction. The method includes redirecting process gas exiting the gas channels using a baffle plate located below the gas channels in the gas plenum and above the faceplate and including a plurality of baffle orifices extending through the baffle plate in the first direction. A first portion of the process gas is redirected from the first direction to the second direction by a portion of the baffle plate that is devoid of the plurality of orifices. A second portion of the process gas passes through the plurality of orifices in the baffle plate and passes through one of the plurality of gas through-holes disposed below the baffle plate. The baffle plate has a second width in a second direction that is in the range of 1.25 to 3 times the first width.

[0020] In other features, the process gas includes at least one of a reactant and a precursor. The method includes exposing a substrate to at least one of the precursor and the reactant to form a dielectric material. The method includes treating the dielectric material with a densification plasma to form a densified dielectric material.

[0021] In other features, the baffle orifice is offset in a first direction from one of the plurality of gas through holes located below the baffle plate. The plurality of baffle orifices are symmetrically disposed about a center of the baffle plate. The second width is in a range of 1.75 to 2.5 times the first width. The plurality of gas through holes have a first diameter, and the plurality of baffle orifices have a second diameter larger than the first diameter. The second diameter is in a range of 1.2 to 6 times larger than the first diameter. The second diameter is in a range of 1.5 to 3 times larger than the first diameter.

[0022] In other features, the upper portion includes a stem portion, a first conical portion extending from the stem portion, and a second conical portion extending from the first conical portion and including a radially outer portion attached to the lower portion.

[0023] In other features, the first conical portion forms a first acute angle with a side of the stem portion. A side of the second conical portion forms a second acute angle with a side of the stem portion, the first acute angle being less than the second acute angle.

[0024] In other features, P posts are connected between the faceplate and the second conical portion, where P is in the range of 8 to 24. P is equal to 12. The P posts are disposed between a first radius corresponding to a radially inner edge of the second conical portion and a second radius corresponding to a radially outer edge of the second conical portion.

[0025] In other features, the gas channel has a first radius. The substrate-facing surface of the upper portion includes a rounded portion extending from the first radius to a second radius, a first horizontal portion extending from the second radius to a third radius, a tapered portion extending from the third radius to a fourth radius, and a second horizontal portion extending from the fourth radius to a fifth radius.

[0026] In other features, the third radius is in the range of 0.75 to 2.5 times the second width. The baffle plate is disposed at 25% to 75% of the distance between the first horizontal portion and the faceplate in the first direction. P access holes extend through the second conical portion of the upper portion, and P posts connect the faceplate to the second conical portion and extend into the P access holes, where P is an integer greater than 1. At least one of the baffle orifices at least partially overlaps at least one of the gas through holes in the first direction. At least one of the baffle orifices completely overlaps at least one of the gas through holes in the first direction.

[0027] In other features, the first plurality of gas through holes is disposed in a first zone having a first hole density and the second plurality of gas through holes is disposed in a second zone having a second hole density, the second hole density being greater than the first hole density.

[0028] In other features, the first zone extends to a first radius and the second zone extends from the first radius to a second radius, the first radius being greater than or equal to 0.7 times the second radius.

[0029] In other features, the method includes supplying gas in a downward and radially outward direction along the stem portion, the first conical portion, and the second conical portion. The film includes a dielectric film. A showerhead for a substrate processing system includes an upper portion including a stem portion, a first conical portion including a side extending from the stem portion at a first acute angle relative to a side of the stem portion, a second conical portion including a side extending from the first conical portion and forming a second acute angle relative to a side of the stem portion, and a gas channel extending in a first direction through the upper portion. The second acute angle is greater than the first acute angle. The lower portion includes a radially outer edge connected to the upper portion, a faceplate including a plurality of gas through holes extending in a first direction through the faceplate, and a baffle plate including a plurality of baffle orifices disposed on a plurality of posts between the faceplate and the gas channel and extending through the baffle plate in a first direction. A gas plenum is defined between the upper and lower portions and extends in a second direction orthogonal to the first direction. A backside gas system is configured to supply gas along the stem portion, the first conical portion, and the second conical portion during substrate processing.

[0030] The showerhead for a substrate processing system includes an upper portion including a stem portion, a first conical portion extending from the stem portion, and a second conical portion extending from the first conical portion. A gas channel extends through the upper portion in a first direction and has a first radius. The lower portion includes a radially outer edge connected to the upper portion, a faceplate including a plurality of gas through-holes extending through the faceplate in the first direction, and a baffle plate including a plurality of baffle orifices disposed on a plurality of posts on the faceplate and extending through the baffle plate. A gas plenum is defined between a first surface of the upper portion and the lower portion and extends in a second direction orthogonal to the first direction. The first surface of the upper portion includes a rounded portion extending from the first radius to the second radius, a first horizontal portion extending from the second radius to a third radius, a tapered portion extending at an acute angle from the third radius to a fourth radius, and a second horizontal portion extending from the fourth radius to a fifth radius.

[0031] The showerhead for a substrate processing system includes an upper portion including a stem portion, a first conical portion including a side extending from the stem portion at a first acute angle relative to a side of the stem portion, a second conical portion including a side extending from the first conical portion and forming a second acute angle relative to a side of the stem portion, and a gas channel extending through the upper portion in a first direction, the second acute angle being greater than the first acute angle. The lower portion includes a radially outer edge connected to the upper portion, a faceplate including a plurality of gas through holes extending through the faceplate in the first direction, and a baffle plate including a plurality of baffle orifices disposed on a plurality of posts on the faceplate and extending through the baffle plate in the first direction. A gas plenum is defined between the upper portion and the lower portion. The faceplate includes a first zone extending to a first radius and a second zone extending from the first radius to a second radius, a first plurality of gas through holes disposed in the first zone having a first hole density and a second plurality of gas through holes disposed in the second zone having a second hole density, the second hole density being greater than the first hole density.

[0032] The substrate processing system includes a processing chamber including an upper chamber surface that defines a first cavity. The showerhead assembly includes a showerhead having an upper portion, a lower portion including a faceplate, and a gas plenum disposed between the upper and lower portions. The first annular support member is disposed in the first cavity and defines a second cavity configured to receive the upper portion of the showerhead. The first annular support member defines a first annular gap located between a radially inner surface of the second cavity and a radially outer surface of the upper portion of the showerhead. The second annular gap is located between the radially outer surface of the first annular support member and the radially inner surface of the first cavity. The backside gas is split by the first annular support member into a first gas flow to the first annular gap and a second gas flow to the second annular gap.

[0033] In other features, the first annular support member includes an upper annular portion and a lower annular portion extending downwardly from the upper annular portion. The second cavity communicates the upper annular portion and the lower annular portion. The upper annular portion has an outer diameter greater than an outer diameter of the lower annular portion.

[0034] In other features, the first annular support member includes a plurality of channels passing from a radially inner surface of the first annular support member to a radially outer surface of the first annular support member. A second gas flow passes through the plurality of channels to the second annular gap. A first protrusion extends radially inward from the radially inner surface of the first annular support member to restrict the flow of gas into the first annular gap.

[0035] The second annular support member includes a gas channel. The annular support plate is connected to the second annular support member and includes an annular opening in fluid communication with an outlet of the gas channel of the second annular support member. The first protrusion extends radially inward from the radially inner surface of the annular support plate toward the outer surface of the first annular support member and restricts the flow of gas from the gas channel to the first annular gap and the second annular gap.

[0036] In other features, the first gas flow through the first annular gap is less than the second gas flow through the second annular gap. The second gas flow is in the range of 60%-90% of the gas flowing through the first and second annular gaps, and the first gas flow is in the range of 10%-40% of the gas flowing through the first and second annular gaps. The second gas flow is in the range of 68%-76% of the gas flowing through the first and second annular gaps, and the first gas flow is in the range of 24%-32% of the gas flowing through the first and second annular gaps.

[0037] In other features, the tilt mechanism is configured to tilt the showerhead relative to the first annular support member. When the tilt mechanism tilts the showerhead relative to the center position, the first annular gap narrows at the first radial position. The bellows is disposed between the first surface of the first annular support member and the second surface of the annular support plate.

[0038] In other features, the upper portion of the showerhead includes a stem portion, a first conical portion extending from the stem portion, and a second conical portion extending from the first conical portion. The first gas flow and the second gas flow are directed across the stem portion, the first conical portion, and the second conical portion.

[0039] In other features, the first conical portion includes a side surface extending from the stem portion at a first acute angle relative to the side surface of the stem portion, and the second conical portion includes a side surface extending from the first conical portion and forming a second acute angle relative to the side surface of the stem portion, the second acute angle being greater than the first acute angle.

[0040] In other features, the faceplate includes a plurality of gas through holes extending vertically through the faceplate in a first direction. The upper portion of the showerhead includes gas channels extending in the first direction and having a first width in a second direction orthogonal to the first direction. A baffle plate is disposed on the plurality of posts above the faceplate and below the outlets of the gas channels, the baffle plate including a plurality of baffle orifices and having a second width in the second direction in a range of 1.25 to 3 times the first width.

[0041] In other features, each of the plurality of baffle orifices is offset in position with one of the plurality of gas through holes located below the baffle plate in a first direction. The plurality of baffle orifices are symmetrically disposed about a center of the baffle plate. The second width is in a range of 1.75 to 2.5 times the first width. The plurality of gas through holes have a first diameter, and the plurality of baffle orifices have a second diameter larger than the first diameter. The second diameter is in a range of 1.2 to 6 times larger than the first diameter. The second diameter is in a range of 1.5 to 3 times larger than the first diameter.

[0042] Other areas of applicability of the present disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for purposes of illustration only and are not intended to limit the scope of the present disclosure. [Brief description of the drawings]

[0043] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0044] [Figure 1] FIG. 1 is a functional block diagram of an example substrate processing system including a showerhead having a porous baffle plate in accordance with an embodiment of the present disclosure.

[0045] [Figure 2A] FIG. 2A is a cross-sectional side view of a commercially available showerhead with a solid baffle plate disposed therein.

[0046] [Figure 2B] FIG. 2B is a plan view of a solid baffle plate disposed over the faceplate of the gas plenum of the showerhead shown in FIG. 2A.

[0047] [Diagram 3] FIG. 3 is a graph illustrating the non-uniform thickness of a film deposited using the showerhead shown in FIGS. 2A and 2B.

[0048] [Figure 4A] FIG. 4A is a side cross-sectional view of an example showerhead having a baffle plate including baffle orifices in accordance with the present disclosure.

[0049] [Figure 4B] FIG. 4B is a side view of the example showerhead of FIG. 4A.

[0050] [Figure 4C] FIG. 4C is a side cross-sectional view of another example of a showerhead having a baffle plate including a baffle orifice in accordance with the present disclosure.

[0051] [Figure 4D] FIG. 4D is a top view of an example faceplate including different arrangements of posts according to the present disclosure. [Figure 4E] FIG. 4E is a top view of an example faceplate including a different arrangement of posts according to the present disclosure.

[0052] [Diagram 5] FIG. 5 is a top view of an example baffle plate disposed above a faceplate according to some embodiments of the present disclosure. [Figure 6] FIG. 6 is a top view of an example baffle plate disposed above a faceplate according to some embodiments of the present disclosure. [Figure 7] FIG. 7 is a top view of an example baffle plate disposed above a faceplate according to some embodiments of the present disclosure. [Figure 8] FIG. 8 is a top view of an example baffle plate disposed above a faceplate according to some embodiments of the present disclosure. [Figure 9] FIG. 9 is a top view of an example baffle plate disposed above a faceplate according to some embodiments of the present disclosure.

[0053] [Figure 10]FIG. 10 is a side cross-sectional view of an example showerhead assembly including a backside gas delivered along the backside of the showerhead of FIG. 4A.

[0054] [Figure 11] FIG. 11 is a bottom view of an example showerhead faceplate including inner and outer zones that include gas through-holes according to some embodiments of the present disclosure.

[0055] [Figure 12] FIG. 12 is a graph showing an example of film thickness as a function of substrate diameter deposited on a substrate using the showerhead of FIG. 4A.

[0056] [Figure 13] FIG. 13 is a flow chart of an example method for depositing a film using a showerhead according to the present disclosure. [Figure 14] FIG. 14 is a flow chart of an example method for depositing a film using a showerhead according to the present disclosure.

[0057] [Figure 15] FIG. 15 is a side cross-sectional view of an example showerhead assembly including a backside gas system according to the present disclosure.

[0058] [Figure 16] FIG. 16 is a partial cross-sectional side perspective view of an example of a portion of a showerhead assembly including a backside gas system according to some embodiments of the present disclosure.

[0059] [Figure 17] FIG. 17 is a perspective view of an example of an annular support, according to some embodiments of the present disclosure.

[0060] In the drawings, reference numbers may be reused to refer to similar and / or identical elements. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0061] In a deposition process, such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or other deposition process, a showerhead can be used to deliver and distribute process gases, such as precursors, inert gases, and / or purge gases, from a gas delivery system to a processing chamber. The showerhead typically includes an upper portion that extends downwardly into the processing chamber and a lower portion that is connected to the upper portion. The gas delivery system is connected to gas channels that extend in a first direction through the upper portion. The gas channels deliver process gases through the upper portion to a gas plenum of the showerhead. A faceplate of the lower portion includes a plurality of gas through-holes. The process gases from the gas plenum flow through the faceplate and onto a substrate that is disposed below the faceplate.

[0062] In some cases, eruptions can occur when process gas from the upper section passes through vertically aligned gas through-holes located directly below the outlet of the gas channel. Gas eruptions can cause defects such as high spots on the substrate. In some commercial showerheads, a solid baffle plate is placed below the gas channel to eliminate eruptions and redirect the process gas (see, for example, Figures 2A and 2B). However, the solid baffle plate causes shadowing on the substrate. Shadowing refers to a reduced center thickness in the area under the baffle plate caused by a localized gas flow reduction.

[0063] 2A shows a side cross-sectional view of a commercially available showerhead with a solid baffle plate disposed therein. In FIG. 2A, the showerhead 200 includes an upper portion 210 that extends downward from the top surface of the processing chamber and a lower portion 214 that is connected to the upper portion 210. A gas plenum 226 is defined between the upper portion 210 and the lower portion 212. The lower portion 214 includes a faceplate 234. The upper portion 210 includes a gas channel 218 having an inlet 216 that communicates with a gas delivery system and an outlet 220 that is connected to the gas plenum 226.

[0064] Gas flowing through the gas channels 218 impinges on a solid baffle plate 224 that is attached to a faceplate 234 within a gas plenum 226. The solid baffle plate 224 reduces blowout at the substrate location located below the baffle plate 224 because the gas does not have a direct vertical path from the gas channels to the aligned gas through-holes. However, with this arrangement, less gas flows through the gas through-holes located directly below the baffle plate 224. Less deposition occurs below the baffle plate 224 because less process gas is delivered.

[0065] 2A, gas channels 218 have an inner diameter with a width d1 in the horizontal direction (orthogonal to the direction of gas flow through gas channels 218). Solid baffle plate 224 has a width d2 in the horizontal direction. To ensure that the momentum of the gas changes from vertical to horizontal, width d2 of solid baffle plate 224 is typically significantly wider than width d1 of the inner diameter of gas channels 218. Typically, d2≧4*d1.

[0066] 2A, the posts 240 are positioned near the outer edge of the solid baffle plate 224. Some commercially available showerheads may have an excessive number of posts 240 (e.g., 50 or more) connecting the faceplate 234 to the upper portion 210. An excessive number of posts 240 can interfere with the placement of the gas through-holes on the faceplate, thus resulting in an uneven deposition layer.

[0067] In Figure 2B, the solid baffle plate 224 of Figure 2A is shown in further detail. The solid baffle plate 224 is supported on three posts 228 above the surface of the faceplate 234. Gas flow is diverted laterally by the solid baffle plate 224, fills the gas plenum 226, and passes through gas through-holes 230 in the faceplate 234 for exposure to the substrate. The solid baffle plate 224 allows less gas to pass through the gas through-holes positioned directly below the solid baffle plate 224, resulting in non-uniform deposition thickness on the substrate.

[0068] Referring now to FIG. 3, the showerhead shown in FIGS. 2A and 2B produces a film with a non-uniform thickness. After deposition, the film has a center-low profile in the area under the baffle plate. In other words, the center is lower than the edge by a distance y. This effect is sometimes called shadowing. It is not possible to completely remove the solid baffle plate 224, since blowout would occur in its absence. The embodiments of the present disclosure describe a new showerhead assembly that improves the overall gas distribution uniformity.

[0069] 1, an example of a substrate processing system 100 for performing substrate processing is shown. In the examples described below, the substrate processing system may perform thermal or plasma-enhanced chemical vapor deposition (CVD), thermal or plasma-enhanced atomic layer deposition (ALD), or other deposition processes. In some embodiments, the substrate processing chamber deposits a dielectric film, such as an oxide film, although other films may be deposited. However, the showerhead may also be used to distribute process gases for other types of substrate processing, with or without a plasma.

[0070] The substrate processing system 100 includes a process chamber 102 that surrounds the other components of the substrate processing system 100 and contains an RF plasma (if used). The substrate processing system 100 includes an upper electrode 104 and an electrostatic chuck (ESC) 106. In some embodiments, the ESC 106 includes a ceramic top layer 161 bonded to a base plate 107 that acts as a lower electrode. In operation, a substrate 108 is disposed on the ESC 106 between the upper electrode 104 and the lower electrode. The ESC 106 includes an electrode 163 that electrostatically attracts the substrate during deposition. The electrode 163 can be a monopolar or bipolar electrode.

[0071] For example, the upper electrode 104 can include a showerhead 109 for introducing and distributing process gases. The showerhead 109 may include an upper portion with one end connected to the top surface of the processing chamber. The lower portion is generally cylindrical and extends radially outward from an opposite end of the upper portion at a location spaced from the top surface of the processing chamber. The substrate-facing surface or faceplate of the base portion of the showerhead includes a plurality of gas through-holes through which process or purge gases flow.

[0072] As further described below in connection with Figures 4A-9, a showerhead according to the present disclosure includes a porous baffle plate including baffle orifices. The baffle plate is disposed in the gas plenum between the gas channels and the faceplate. The baffle orifices allow additional gas flow through gas through-holes located below the baffle plate.

[0073] When plasma is used, an RF generating system 110 generates and outputs RF power at one or more frequencies and / or power levels to one of the upper electrode 104 and the lower electrode. The other of the upper electrode 104 and the lower electrode may be DC grounded, AC grounded, or floating. For example, the RF generating system 110 may include an RF generator 111 that generates RF power, which is supplied to the lower electrode by a matching and distribution network 112, and the upper electrode 104 is grounded (or vice versa). An actuator 120 and a lift pin assembly 122 including P lift pins 124 (P is an integer greater than 2) may be used during loading and unloading of the substrate between the chambers.

[0074] A gas delivery system 130 includes one or more gas sources 132-1, 132-2, ..., and 132-N (collectively, gas sources 132), where N is an integer greater than 0. The gas sources 132 supply one or more process gases, such as deposition precursors, purge gases, and etching gases. In some embodiments, vaporized precursors may also be used (not shown). The gas sources 132 are connected to a manifold 140 by valves 134-1, 134-2, ..., and 134-N (collectively, valves 134), mass flow controllers 136-1, 136-2, ..., and 136-N (collectively, mass flow controllers 136), and valves 138-1, 138-2, ..., and 138-N (collectively, valves 138). The output of the manifold 140 is supplied to the process chamber 102 by the gas delivery system 130. For example, the output of the manifold 140 is fed to a showerhead 109 .

[0075] A heater controller 142 may be connected to a resistive heater disposed in the ESC 106. The heater controller 142 may be used to control the temperature of the ESC 106 and the substrate 108. Additionally, the ESC 106 may include internal channels (not shown) for flowing fluid from a fluid source (not shown) to further control the temperature of the pedestal and the substrate. Valves 150 and pumps 152 may be used to evacuate reactants from the processing chamber 102 and / or control the pressure within the processing chamber. A controller 160 may be used to control various components of the substrate processing system 100 described herein.

[0076] As described further below, the controller 160 causes the robot arm 174 to load the substrate 108 onto the ESC 106. The controller 160 communicates with the gas delivery system 130 to control the supply of process gases, purge gases, and / or inert gases. The controller communicates with the valves 150 and pumps 152 to control the pressure in the processing chamber and / or evacuation of reactants. The controller 160 also causes the voltage source 172 to output voltages to the electrodes to clamp and unclamp the substrate.

[0077] 4A-4E, a showerhead 300 according to some embodiments of the present disclosure is shown in further detail. In Figures 4A and 4B, the showerhead 300 includes an upper portion 304 and a lower portion 306. The upper portion 304 includes an upper section 310 that extends downwardly from a top surface of the processing chamber and a first conical portion 312 that extends outwardly from the upper portion 310. A second conical portion 314 extends outwardly from the first conical portion 312.

[0078] A gas channel 318 extends vertically through the upper portion 304 and includes an inlet 316 in communication with a gas delivery system and an outlet 320 that delivers process gas to a gas plenum 326 defined by opposing surfaces of the upper and lower portions 304, 306. In some embodiments, the gas plenum 326 defines a generally cylindrical volume having a conical portion on a radially inner portion of its upper surface (to provide clearance for gas to flow around a baffle plate, described below).

[0079] The first conical portion 312 forms a first acute angle α with respect to the side of the upper portion 310. The second conical portion 314 forms a second acute angle β with respect to the side of the upper portion 310. In some embodiments, the first acute angle α is smaller than the second acute angle β. In some embodiments, the first acute angle α is in the range of 15°-50°. In other embodiments, the first acute angle α is in the range of 15°-25°, although other values ​​can be used. In some embodiments, the second acute angle β is in the range of 60°-85°. In other embodiments, the second acute angle β is in the range of 70°-80°, although other values ​​can be used. The relatively smooth transition of the side of the upper portion results in less turbulence in the backside gas flow, which improves the effectiveness of the gas curtain and reduces parasitic plasma (if used).

[0080] 4C, another exemplary embodiment of the showerhead is shown in which the second conical portion 314 is omitted and the first conical portion 312 extends downwardly and then transitions into a planar portion 315 that extends in a first plane spaced above and parallel to the plane that contains the faceplate 334.

[0081] Gas flowing through the gas channels 318 impinges on a baffle plate 324 that includes multiple baffle orifices (examples of which are shown and described in Figures 5-9 below). The baffle plate 324 has a flat cylindrical shape and is oriented horizontally below the gas channels 318. The horizontal surface of the baffle plate 324 causes the momentum of a portion of the gas from the gas channels 318 to change from vertical to lateral and fill a radially outer portion of the gas plenum 326. As described further below, the multiple baffle orifices in the baffle plate 324 allow a portion of the process gas to flow through the baffle plate 324 (and gas through-holes below the baffle plate 324) to reduce or prevent shadowing on the substrate.

[0082] Gas from the gas channels 318 enters a gas plenum 326 and flows through gas through-holes 330 in a faceplate 334. The baffle plate 324 is mounted on B posts 328 on a surface of the gas plenum 326 adjacent the faceplate 334, where B is an integer greater than 1. In some embodiments, B=3, although additional posts such as B=4 or B=5 may be used.

[0083] In this example, the inner diameter of the gas channel 318 has a width d1 in a horizontal direction perpendicular to the vertical direction of the gas flowing through the gas channel 318. The baffle plate 324 has a width d3 in the horizontal direction. To ensure that the vertical momentum of the process gas changes horizontally, the width d3 of the baffle plate 324 is typically wider than the width d1 of the gas channel 318. Through testing, it has been found that the shadowing effect is more significantly reduced when the width d3 of the baffle plate 324 is wider than the width d1 but narrower than the width d2 shown in FIG. 2A. In some embodiments, the width d3 is in the range of 1.25*d1 to 3*d1, although other widths may be used. In some embodiments, the width d3 is in the range of 1.75*d1 to 2.5*d1, although other widths may be used.

[0084] At the first radius R1, the outlet 320 transitions to a rounded section 350 that terminates at a second radius R2. The rounded section 350 helps reduce turbulence in the gas flow. At the second radius R2, the top surface 348 transitions at an acute angle to a first horizontal section 352 to a third radius R3 (greater than R2). At the third radius R3, the top surface 348 transitions to a tapered section 354 that extends to a fourth radius R4 (greater than R3). The first horizontal section 352 and the tapered section 354 provide clearance for gas to flow smoothly around the baffle plate 324.

[0085] In some embodiments, the acute angle is in the range of 8° to 20°. In some embodiments, the acute angle is in the range of 10° to 14°, although other angles can be used. At the fourth radius R4, the upper surface transitions into a second horizontal portion 356 that is parallel to the lower surface 349 of the gas plenum 326 and extends to a fifth radius R5. The first horizontal portion 352 and the tapered portion 354 define an enlarged central cavity in the area around the perimeter of the baffle plate 324 to increase gas conductance and ensure uniform gas flow.

[0086] The length, angle, and radial location of the first horizontal portion 352 and the tapered portion 354 are selected to ensure uniform gas flow as the momentum of the gas flow changes from vertical to horizontal. The rounded portion 350 and the tapered portion 354 are configured to increase gas conductance and reduce locations of high or low pressure within the gas plenum. As can be appreciated, the location of the tapered portion 354 can be moved radially inward as shown by dotted lines R3' and R4'.

[0087] In some embodiments, R3 is in the range of 0.7*d3 to 2.5*d3, although other values ​​can be used. In some embodiments, R3 is in the range of d3 to 2.0*d3, although other values ​​can be used. If R3 is too small, the process gas flow may be restricted (causing a local pressure increase), resulting in fluctuations in the process gas flow through the gas through hole 330. If R3 is too large, the local pressure of the process gas may be low, resulting in fluctuations in the process gas flowing through the gas through hole 330 at this location. Localized variations in gas delivery due to high or low pressure regions may cause shadowing effects or film non-uniformity.

[0088] In some embodiments, the showerhead is assembled by attaching the heads of P posts 340 to the inner surface of the faceplate 334 of the lower portion 306, where P is an integer greater than one. The upper portion 304 of the showerhead is then attached to the lower portion 306. The radial edges 362 are attached to corresponding edges of the faceplate 334. The shafts of the P posts 340 are inserted and attached to the upper portion 304 through corresponding access holes 364 (one access hole is shown) that pass through the second conical portion 314. In some embodiments, the P posts 340 are welded or crimped to the faceplate 334 and / or to the access holes 364 of the upper portion 304.

[0089] The P posts 340 connect the upper portion 304 to the faceplate and help maintain the spacing between the top surface 348 and the faceplate 334 during significant temperature changes that occur during processing. In other words, the P posts 340 resist movement of the faceplate 334 due to expansion / contraction caused by heating and cooling that can cause defects or non-uniformities. In some embodiments, the number of posts P is set in the range of 8-24. Without being limited to a particular theory, fewer than eight posts typically does not adequately prevent faceplate movement, while more than 24 posts does not provide enough performance improvement to justify the machining and / or material costs.

[0090] As shown in FIG. 4D, in some embodiments, P=12, P posts 340 are arranged in a circle C having a radius between R4 and R5, and P posts 340 are equally spaced around the circumference of the circle. Angle adjustment of 360 / P and the spacing of P posts 340 away from the circle C may be required to place the posts over the gas through holes 330 through the faceplate. In some embodiments, P may be equal to 14, 16, 18, 20, or 22. Some commercially available showerheads use a significantly higher number of posts, which increases the manufacturing cost of the showerhead. Too many posts also reduces the locations where gas through holes can be placed on the faceplate. In some embodiments, P posts 340 are arranged in two or more circles having a predetermined radius between R4 and R5.

[0091] 4E, in other embodiments, P posts are disposed in a non-circular pattern between R4 and R5, in some embodiments, P posts 340 are disposed 25%-75% of the distance between R4 and R5.

[0092] In some embodiments, the P posts 340 have an inverted "T" shaped cross section and include a head and a shaft. The head has a larger diameter than the shaft. The top surfaces of the heads of the P posts 340 are attached to the surface 349 of the faceplate. The shafts of the P posts 340 are inserted into and attached to the inner surface of the access holes 364 in the second conical portion 314.

[0093] In some embodiments, the ratio of the head height of the P posts 340 to the head diameter of the P posts 340 is in the range of 0.5 to 1.0. In other embodiments, the ratio of the head height of the P posts 340 to the head diameter of the P posts 340 is in the range of 0.6 to 0.8.

[0094] In some embodiments, the ratio of the height of the P posts 340 (including heads and shafts) to the diameter of the heads of the P posts 340 is in the range of 0.2 to 0.5. In other embodiments, the ratio of the total height of the P posts 340 (including heads and shafts) to the diameter of the heads of the P posts 340 is in the range of 0.25 to 0.35. In some embodiments, the ratio of the diameter of the shaft to the diameter of the heads is in the range of 0.70 to 0.95. In other embodiments, the ratio of the diameter of the shaft to the diameter of the heads is in the range of 0.80 to 0.90.

[0095] 4A , a vertical distance d4 of the gas plenum 326 is defined between the surface 349 of the faceplate 334 and the first horizontal portion 352. In some embodiments, the baffle plate 324 is vertically centered between 0.25*d4 and 0.75*d4. In some embodiments, the plane defined by the second horizontal portion 356 passes through the baffle plate 324. The vertical location of the baffle plate 324 in the gas plenum 326 is selected to ensure that sufficient gas can flow laterally (then through the gas through-holes 330 located radially outward of the baffle plate 324) and vertically through the baffle orifices of the baffle plate 324 (then through the gas through-holes 330 below the baffle plate 324) to allow for uniform gas flow.

[0096] 5-9 show various examples of baffle orifices in the baffle plate 324 in further detail. In FIG. 5, the baffle plate 324 is supported above the surface of the face plate 334 on B posts 328. Although B=3 posts are shown, additional posts can be used. The baffle plate 324 includes a number of baffle orifices 370-1, 370-2, ..., and 370-H (collectively baffle orifices 370), where H is an integer greater than 1. While the majority of the gas flow is diverted laterally by the baffle plate 324 and ultimately passes through the gas through-holes 330 in the face plate 334, at least a portion of the gas flow travels vertically through the baffle orifices 370 in the baffle plate 324, then travels at least partially laterally, and then travels vertically through the gas through-holes 330 located below the baffle plate 324.

[0097] In some embodiments, the baffle orifices 370 are symmetrically positioned about the center of the baffle plate 324 to ensure uniform gas flow to the center of the substrate. In the example shown in FIG. 5, H=6 and the baffle orifices 370 are symmetrically positioned in a circular pattern, although additional or fewer gas through-holes can be used. In some embodiments, the diameter of the baffle orifices 370 ranges from 1.2 to 6 times larger than the gas through-holes 330 in the faceplate 334, although other diameters can be used. In some embodiments, the diameter of the baffle orifices 370 ranges from 1.5 to 3 times larger than the gas through-holes 330 in the faceplate 334, although other diameters can be used.

[0098] In some embodiments, the baffle plate 324 is clocked or rotationally oriented such that the baffle orifices 370 are misaligned with the gas through-holes 330 in the faceplate 334 that are located vertically below the baffle orifices 370. Due to the misalignment of the baffle orifices, gas flows vertically through the baffle orifices, hits the faceplate and is redirected horizontally, after which the gas passes vertically through the gas through-holes 330. In FIG. 6, an additional baffle orifice 371 is located in the center of the baffle plate 324. By locating the baffle orifice 371 in the center of the baffle plate 324, the symmetry of the baffle orifices is maintained, promoting uniform gas flow. The symmetry of the baffle orifices in the baffle plate 324 tends to homogenize the gas flowing through the gas through-holes 330 in the faceplate 334 that are located vertically below the baffle orifices 370.

[0099] In some embodiments, regardless of the total number of baffle orifices, the baffle plate 324 has about 2% to 10% of its surface area covered by the baffle orifices (excluding holes for the posts 328). In some embodiments, regardless of the total number of baffle orifices, the baffle plate 324 has about 4% to 8% of its surface area covered by the baffle orifices (excluding holes for the posts 328). The surface area is defined by the surface of the baffle plate 324 that faces the gas channels 318.

[0100] In FIG. 7, the baffle plate 324 includes baffle orifices 372-1, 372-2, 372-3, ..., 372-H. At least one of the baffle orifices 372-1, 372-2, ..., and 372-H (e.g., 372-3 in FIG. 7) at least partially overlaps with at least one of the gas through-holes 330 in the face plate located vertically below. As can be appreciated, the partial overlap can be used to strategically supply additional process gas to a particular location through at least one of the gas through-holes 330, allowing fine adjustment of the process gas delivery. For example, the partial overlap can be used when local shadowing or low spots occur on the substrate despite using a baffle plate with baffle orifices.

[0101] 8, at least one of baffle orifices 370-1, 370-2, ..., and 370-H (e.g., 370-H in FIG. 8) fully overlaps with at least one of the gas through-holes 330 in the faceplate 334 located vertically below the baffle plate 324, while the remaining baffle orifices are misaligned. As can be appreciated, the full overlap can be used to strategically supply additional process gas to specific locations through at least one of the gas through-holes 330 to allow fine tuning of process gas delivery.

[0102] As can be appreciated, although a particular hole pattern and number of baffle orifices are shown, other hole patterns and numbers of baffle orifices can be used to further fine-tune the gas delivery. For example, multiple baffle orifices, each with a smaller and / or larger diameter, can be used to further adjust the gas flow and prevent shadowing. For example, in FIG. 9, baffle orifices 380-1, 380-2, ..., and 380-H, and baffle orifices 382-1, 382-2, ..., and 382-I are shown. In this example, baffle orifices 380-1, 380-2, ..., and 380-H have a larger diameter than baffle orifices 382-1, 382-2, ..., and 382-I. While the baffle orifices are arranged in a spaced apart configuration in a first circular pattern in Figures 5-8, baffle orifices 382-1, 382-2, ..., and 382-I are arranged in a first circular pattern within a second circular pattern that includes baffle orifices 380-1, 380-2, ..., and 380-H. In other embodiments, the diameters of the baffle orifices in a given circular pattern may be different to tailor localized gas delivery. Although circular baffle orifices are illustrated in Figures 5-9, in some embodiments the baffle orifices may be different shapes, such as oval, rectangular, triangular, square, or combinations thereof.

[0103] 10, further improvement in uniformity can be achieved using a showerhead assembly 409 including a backside gas system 410 that delivers a backside gas along the backside of the showerhead. In some embodiments, the backside gas system 410 includes a gas source 412 and a valve 414 for delivering a backside gas to the cavity 416. The showerhead is mounted inside a processing volume 418 of the processing chamber including a top surface 420 and a sidewall 422. Annular supports 424 and 426 are used to mount the showerhead within the processing chamber. The annular support 426 is disposed below the annular support 424. The top surface 420 of the processing chamber includes an opening 427 that receives the annular support 426. Annular gaps 432 and 433 are defined between the annular support 426 and the opening in the top surface 420 and between the annular support 426 and the upper portion 310, respectively. The annular gap 432 is disposed at an outer diameter of the annular support 426, and the annular gap 433 is disposed at an inner diameter of the annular support 426.

[0104] Backside gas from a gas source 412 flows through annular gaps 432 and 433 across the sides defined by the upper portion 310, the first conical portion 312, and the second conical portion 314. In some embodiments, the gas is an inert gas such as argon (Ar). In other embodiments, a gas such as molecular oxygen (O2) is used. The backside gas flow reduces parasitic plasma above the showerhead and improves uniformity of the process gas flow from the showerhead at the edge of the substrate. The backside gas flow also provides a gas curtain around the radial outer edge of the showerhead to contain and concentrate the process gas delivered by the showerhead to a radius around the radial outer edge of the substrate.

[0105] 11, the substrate-facing surface of a faceplate 334 is shown to include a gas through-hole pattern that defines an inner zone 512 and an outer zone 514. The inner zone 512 and the outer zone 514 include gas through-holes 330 having different patterns and / or spacing. In some embodiments, the inner zone 512 extends to a first radius and the outer zone 514 extends from the first radius to a second radius. In some embodiments, the density of gas through-holes 330 is greater in the outer zone 514 compared to the density of gas through-holes 330 in the inner zone 512, as shown.

[0106] In this example, the patterns in the inner zone 512 and the outer zone 514 have the same shape, but the gas through holes are placed closer to each other. In other embodiments, both the pattern and density are different. In still other embodiments, the hole patterns have the same size, but the diameter of the gas through holes in the inner zone 512 is smaller than in the outer zone 514. In some embodiments, the first radius of the inner zone 512 is 0.7 times or more than the second radius of the outer zone 514. In some embodiments, the first radius is 0.8 times or more than the second radius.

[0107] In some applications using a faceplate having a single zone with a uniform density of gas through holes, less gas flows through the gas through holes 330 in the radially outer region of the faceplate 334, which may result in less film deposition on the radially outer portion of the substrate. Increasing the density of gas through holes 330 in the outer zone 514 compared to the inner zone 512 increases the flow of process gas delivered to the outer zone 514 and reduces non-uniformity.

[0108] Referring now to FIG. 12, a showerhead assembly (as shown in FIG. 4A) including one or more of the features described above delivers gases to a substrate more uniformly. As a result, a processing chamber having a showerhead produces a film with a more uniform thickness at the center and edge. In other words, both the center and edge of the film deposited on the substrate are closer to height Y (rather than the edge at height Y and the center at height (Yy) as shown in FIG. 3). Without being limited to a particular theory, the baffle plates of FIGS. 5-9, the placement of the baffle plates, the central cavity space, the backside gas, the reduced number and particular placement of the support posts, and other features described herein, allow for a more uniform delivery of process gases to the center of the substrate while still protecting the central portion of the substrate from the adverse effects of blowouts. This significantly reduces the non-uniformity of the substrate thickness at the center.

[0109] As described above, a showerhead including a baffle plate having a baffle orifice can be used to deposit a film. For example, during chemical vapor deposition (CVD) or plasma enhanced CVD (PECVD), a substrate is exposed to one or more precursor gases and can use heat, plasma, or reactants to induce chemical reactions that deposit a film on the substrate. Typically, the thickness of the film can be controlled at least in part by the duration of exposure to the precursor and reactant gases, the gas flow rate, the plasma power, the substrate temperature, and / or the chamber pressure.

[0110] 13, an example method 600 for depositing a film using CVD or PECVD using a showerhead or showerhead assembly including a baffle plate having baffle orifices and other features according to the present disclosure is shown. For example, a silicon oxide (Si x O y , x and y are integers equal to or greater than 1), although other types of films may be deposited.

[0111] At 610, a substrate is delivered onto a substrate support in a processing chamber. At 620, the processing chamber pressure is set to a predetermined pressure range and the substrate is heated to a predetermined temperature range. At 624, one or more precursor gases are delivered to the processing chamber through a showerhead having a baffle plate including baffle orifices for a predetermined period of time. In some embodiments, a backside gas system delivers a backside gas during deposition of the film to prevent backside parasitic plasma and / or provide a gas curtain.

[0112] At 628, a plasma can optionally be struck in the processing chamber to drive chemical reactions. The plasma power can be supplied continuously or can be switched between two or more RF power levels at predetermined subintervals during a predetermined period of time. After a predetermined period of time, the plasma (if used) is extinguished. Gas purging and / or evacuation of the processing chamber can be performed as needed.

[0113] The method 600 can perform additional CVD or PECVD cycles to increase the thickness of the film deposited on the substrate, as determined at 636. For example, deposition can be stopped periodically to allow a densification or passivation step to be performed. In some embodiments, the densification step is performed by providing a densification gas and striking a plasma for a predetermined period of time. In some embodiments, the densification gas includes an inert gas, such as helium, a mixture of helium and molecular oxygen, and / or a gas or gas mixture.

[0114] If 636 is false, the method returns to 624. Once processing of the substrate is complete, the substrate may be optionally exposed to a densifying plasma at 642. At 644, the substrate is removed from the processing chamber. At 648, the method either processes additional substrates by returning to 610 or ends.

[0115] As described above, a showerhead including a baffle plate with baffle orifices can be used to perform multiple atomic layer deposition (ALD) or plasma enhanced ALD (PEALD) cycles. During one ALD or PEALD cycle, the substrate is exposed to precursor gases for a first predetermined period during which the precursors self-limitingly adsorb onto the exposed surface of the substrate. In some embodiments, approximately a monolayer is adsorbed onto the surface of the substrate. After the first predetermined period, the process chamber is purged or evacuated. A reactant gas is then supplied to the process chamber for a second predetermined period. Heat and / or plasma can be used to induce a chemical reaction between the precursors adsorbed onto the surface of the substrate and the reactant gas to form a film. After the second predetermined period, the process chamber is purged or evacuated. Additional cycles are performed to increase the thickness of the film.

[0116] 14, an example of a method 700 for depositing a film using ALD or PEALD and a showerhead or showerhead assembly including a baffle plate having a baffle orifice and other features described above is shown. For example, a silicon oxide (Si x O y , x and y are integers), although other types of films may be deposited.

[0117] At 710, a substrate is delivered onto a substrate support in a processing chamber. At 720, the processing chamber pressure is set to a predetermined pressure range and the substrate is heated to a predetermined temperature range. At 724, precursor gas is delivered using a showerhead (including a baffle plate having baffle orifices and / or other features described above) for a predetermined period of time to allow the precursor to adsorb onto the substrate in a self-limiting manner. In some embodiments, the predetermined period of time is in a range of about 0.1 seconds to about 60 seconds, 0.2 seconds to about 6 seconds, or about 0.3 seconds to about 2 seconds. As used herein, "about" means + / - 10%. In some embodiments, a backside gas system delivers backside gas during deposition.

[0118] At 728, after a predetermined period of time, a purge gas is supplied to evacuate the processing chamber. At 732, a reactive gas is supplied to the processing chamber using a showerhead to cause a chemical reaction with the precursors on the surface of the substrate. A plasma can optionally be struck in the processing chamber to facilitate the chemical reaction. At 736, after a predetermined period of time, the plasma (if used) is extinguished and a purge gas is supplied to evacuate the processing chamber.

[0119] If additional ALD or PEALD cycles are to be performed on the substrate, the method returns to 724. Once processing of the substrate is complete, the substrate may be optionally exposed to a densifying plasma at 742. At 744, the substrate is removed from the processing chamber at 744. At 748, the method either processes additional substrates or ends by returning to 710.

[0120] In some embodiments, the substrate temperature is set in the range of 100° C. to 800° C. during processing. In other embodiments, the substrate temperature is set in the range of 300° C. to 700° C. during processing. In yet other embodiments, the substrate temperature is set in the range of 350° C. to 500° C. during processing. In some embodiments, the process pressure is in the range of about 0.1 Torr (T) to about 30 T. In some embodiments, the process pressure is in the range of about 1 T to about 10 T.

[0121] If an RF plasma is used, the plasma power may be supplied at one or more frequencies ranging from 10 W to 10 kW. The RF power source may include one or more power sources operating at one or more frequencies, such as a low frequency power source and a high frequency power source. The low frequency source may operate in a range of about 10 kHz to about 500 kHz. In other embodiments, the low frequency power source may operate in a range of about 200 kHz to about 450 kHz (e.g., 430 kHz). The high frequency source may operate in a frequency range of about 1.5 MHz to about 3 GHz. By way of example only, the high frequency source may operate at about 1.8 MHz, 13.6 MHz, 27 MHz, 40 MHz, 60 MHz, or 2.54 GHz, although other frequencies may be used.

[0122] In some embodiments, the film comprises silicon oxide and the precursor comprises a silicon-containing precursor. In some embodiments, the silicon-containing precursor comprises a silane. In some embodiments, the silane comprises an aminosilane. The aminosilane comprises at least one nitrogen atom bonded to a silicon atom. The aminosilane may also comprise hydrogen, oxygen, halogen, and / or carbon atoms. Examples of aminosilanes include bis(tert-butylamino)silane (BTBAS), N-(dimethylaminosilyl)-N-ethylethanamine (SAM-24), tris(dimethylamino)silane (3DMAS), and tetrakis(dimethylamino)silane (4DMAS).

[0123] In some embodiments, the reactant comprises an oxygen-containing reactant, or an oxygen- and hydrogen-containing reactant, hi some embodiments, the oxygen-containing reactant, or the oxygen- and hydrogen-containing reactant is selected from the group consisting of molecular oxygen (O2), hydrogen peroxide (H2O2), ozone (O3), molecular hydrogen (H2), water (H2O), or combinations thereof.

[0124] Additional examples of films that may be deposited using the showerheads described herein are shown and described in commonly assigned PCT Publication No. WO2021 / 025874, filed July 24, 2020, entitled "THERMAL ATOMIC LAYER DEPOSITION OF SILICON-CONTAINING FILMS," PCT Publication No. WO2022 / 020528, filed July 21, 2021, entitled "CONFORMAL THERMAL CVD WITH CONTROLLER FILM PROPERTIES AND HIGH DEPOSITION RATE," and PCT Publication No. 2022 / 006010, filed June 28, 2021, entitled "REDUCING INTRALEVEL CAPACITANCE IN SEMICONDUCTOR DEVICES," all of the disclosures of which are incorporated herein by reference in their entireties.

[0125] 15 and 16, further improvements in uniformity can be achieved using a showerhead assembly 800 including a showerhead 300 and a backside gas system 801. The showerhead 300 is mounted inside the processing volume of the processing chamber. A backside gas is supplied to the backside volume 802 between a lower portion of the showerhead and an upper chamber surface to reduce parasitic plasma and / or provide a gas curtain. A process gas is supplied to the gas plenum to deposit a film on the exposed surface of the substrate through a faceplate. In some embodiments, the backside gas system 801 generates first and / or second annular gas flows along the radially outer surface of the showerhead.

[0126] When installing the showerhead in the processing chamber enclosure, the faceplate of the showerhead should be precisely positioned (e.g., spaced a predetermined distance from the substrate in a plane parallel to the plane containing the substrate support) to avoid causing deposition non-uniformity. In other words, variations in the predetermined distance between the faceplate and the exposed surface of the substrate at different locations on the substrate will cause deposition non-uniformity. Due to variations in machining tolerances, the tilt of the showerhead may need to be precisely adjusted during setup or maintenance to align the plane of the faceplate with respect to the plane of the substrate support to prevent deposition non-uniformity.

[0127] When the showerhead is tilted relative to the showerhead mounting structure during setup or maintenance, the first annular gas flow is reduced or restricted at a particular radial location. The showerhead assembly 800 of FIGS. 15-17 delivers both a first and a second annular gas flow, with the second annular gas flow being concentric with and radially outward from the first annular gas flow. The second annular gas flow is not affected by showerhead tilt. Providing more gas through the second annular gas flow, as described below, reduces sensitivity to changes in the first annular gas flow caused by tilting, which can vary from installation to installation.

[0128] The processing chamber includes a chamber enclosure that confines the process gases and / or plasma. The chamber enclosure includes an upper chamber surface 804 and a chamber sidewall and a bottom chamber surface (both not shown). A first cavity 806 extends vertically through the upper chamber surface 804. As described further below, the backside gas system 801 supplies a backside gas that is split into a first annular gas flow and a second annular gas flow that pass along the radially outer surface of the showerhead 300 (e.g., the upper portion 310, the first conical portion 312, and the second conical portion 314). In some examples, the second annular gas flow supplies more gas to the backside volume 802 than the first annular gas flow.

[0129] A first annular support member 810 is disposed in a first cavity 806 in the upper chamber surface 804. The first annular support member 810 has a "T" shaped cross section. The first annular support member 810 includes a second cavity 811 (which passes vertically through the first annular support member 810), an upper annular portion 812, and a lower annular portion 814. In some embodiments, the first cavity 806 and the second annular support member 820 in the upper chamber surface 804 have complementary or mating opposing surfaces.

[0130] In some embodiments, the upper annular portion 812 has an outer diameter that is larger than an outer diameter of the lower annular portion 814. The upper portion 310 of the showerhead 300 is disposed in the second cavity 811. The first annular support member 810 remains stationary relative to the first cavity 806 at the upper chamber surface 804 when the showerhead 300 is tilted in the second cavity 811. As a result, the side of the showerhead 300 approaches the first annular support member 810, restricting the first annular gas flow at a particular radial location.

[0131] A second annular support member 820 is connected to the upper mounting surface (not shown). In some examples, the second annular support member 820 has a "T" shaped cross section. The second annular support member 820 includes an annular upper portion 821, an annular lower portion 823, and a third cavity 825 passing vertically therethrough. The annular upper portion 821 has an outer diameter larger than an outer diameter of the annular lower portion 823. Fasteners 827 connect the second annular support member 820 to the upper portion 310 of the showerhead 300 and the annular support plate 816. A stem portion 829 of the showerhead 300 passes through the third cavity 825 in the second annular support member 820 and is connected to the gas delivery system 800. The gas delivery system 800 provides process gases to the gas channels and gas plenums as described above.

[0132] An annular support plate 816 is mounted below a second annular support member 820. An upper annular portion 812 of the first annular support member 810 is connected to the annular support plate 816 by a tilt mechanism 830. The tilt mechanism 830 includes variable length legs that allow for controlled tilting of the showerhead 300 within the second cavity 811 defined by the first annular support member 810. The tilt mechanism 830 allows fine adjustment of the tilt of the showerhead 300 (and faceplate) relative to the top surface of the substrate support. In some examples, the tilt mechanism 830 adjusts the tilt in a range of 0° to 1°, although other ranges can be used.

[0133] A bellows 840 is disposed about the radially outer surface of the second annular support member 820 and defines a flexible volume (or "bellows volume") about the lower annular lower portion 823 of the second annular support member 820. The bellows 840 flexibly connects the lower radially inner surface 841 of the annular support plate 816 to the radially inner upward facing surface 843 of the first annular support member 810, defining the bellows volume. Backside gas is supplied to the bellows volume and is divided by the first annular support member 810 into first and second annular gas streams.

[0134] The radially inner surface of upper annular portion 812 defines an annular opening 845 and an annular bevel 847 that extends inwardly at an acute angle at or near the transition between upper annular portion 812 and lower annular portion 814. H channels 844 extend downwardly and outwardly through upper annular portion 812 and / or lower annular portion 814, where H is an integer greater than 4 and less than 60. In some examples, the inlets of the H channels 844 are located on annular bevel 847, although other locations may be used.

[0135] The H channels 844 extend from the radially inner surface of the first annular support member 810 to the radially outer surface of the first annular support member 810. The second annular gas flow is provided by gas flowing through the H channels 844 into a radially outer annular gap 854 located between the radially outer surface of the lower annular portion 814 and the radially inner surface of the first cavity 806.

[0136] A protrusion 852 is formed on the radially inner surface of the first annular support member 810 at or near the transition between the upper annular portion 812 and the lower annular portion 814. The protrusion 852 restricts the flow of gas to a radially inner annular gap 850 located between the radially inner surface of the first annular support member 810 and the radially outer surface of the upper portion 310 of the showerhead 300.

[0137] The gas supplied to the bellows volume is split into a first gas stream and a second gas stream. The first, or radially inner, gas stream passes through the protrusion 852 and enters the radially inner annular gap 850. The second, or radially outer, gas stream passes through the H channels 844 and enters the radially outer annular gap 854.

[0138] 16 , the tilt mechanism 830 and other features of the showerhead 300 are shown in further detail. In some examples, the tilt mechanism 830 includes a height adjustment member 858 that has a variable length and extends from the second annular support member 820, through the annular support plate 816, to the upwardly facing surface of the first annular support member 810. In some embodiments, the height adjustment member 858 includes a bolt that is received by a threaded hole in the first annular support member 810. Turning the bolt increases or decreases the length of the height adjustment member 858 and the local distance separating the annular support plate 816 and the first annular support member 810.

[0139] In some examples, three of the height adjustment members 858 are positioned 120° apart. In other words, the height adjustment members 858 can be individually adjusted to cause the desired amount of height adjustment and / or tilt. It is possible to increase or decrease the height of all height adjustment members 858 by the same amount to adjust the height of the faceplate above the substrate support. Although manually adjusted height adjustment members, such as bolts, are shown, actuators (such as stepper motors or other adjustment devices) having protruding and retracting cylinders can also be used.

[0140] Backside gas is supplied by gas source 412 and valve 414 to an inlet 862 of a vertical channel 860 that extends downward through second annular support member 820. The gas flows into an annular cavity 863 defined by annular support plate 816 between the top surface of annular support plate 816 and the bottom surface of second annular support member 820. In some embodiments, one or more O-rings (not shown) are used to seal adjacent surfaces between two or more components. Gas flows downward through vertical channel 860 into annular cavity 863, radially inward, and downward through protrusion 866 into the bellows volume. Protrusion 866 restricts the flow of gas from the gas source into the bellows volume.

[0141] 16 and 17, the first annular support member 810 is shown in further detail. A cylindrical guide 910 extending from the first annular support member 810 passes through an opening 912 in the annular support plate 816 as the height of the height adjustment member 858 is adjusted (FIG. 16). The cylindrical guide 910 allows for relative movement (e.g., tilting) of the showerhead with respect to the first annular support member 810. The height adjustment member 858 is received within the cylindrical guide 910. A guide pin 920 received by a corresponding bore in the second annular support member 820 is used to align the annular support plate 816 with respect to the second annular support member 820. A plurality of bores 941 pass vertically through the first annular portion 814 and receive fasteners (not shown) that attach the first annular support member 810 to the upper chamber surface 804 in the cavity 811.

[0142] The inlets of the H channels 844 are shown disposed about the periphery of the annular beveled surface 847. One or more rotational alignment portions 930 may be defined in a groove 932 (e.g., a circular groove) located in the upwardly facing surface 933 of the first annular support member 810. In some embodiments, the rotational alignment portion 930 includes an arcuate portion 931 that extends radially outward from the groove 932 to provide a detent. Additional rotational alignment portions may be located at different radial locations about the groove 932 relative to the illustrated rotational alignment portion 930.

[0143] Referring again to FIG. 15, in some embodiments, a first flow rate of the first or radially inner gas flow passing through the radially inner annular gap 850 is less than a second flow rate of the second or radially outer gas flow passing through the radially outer annular gap 854. In some examples, the first flow is in the range of 10%-40% of the backside gas supplied to the bellows volume and the second flow is in the range of 60%-90% of the backside gas supplied to the bellows volume. In some examples, the first flow is in the range of 24%-32% of the gas supplied to the bellows volume and the second flow is in the range of 68%-76% of the gas supplied to the bellows volume. In other examples, the first and second annular gas flows are approximately equal or the first annular gas flow is greater than the second annular gas flow.

[0144] In some embodiments, more of the backside gas delivered to the bellows volume is split into a radially outer gas flow compared to the radially inner gas flow. When the showerhead 300 is not tilted, the spacing in the radially inner annular gap 850 is relatively uniform around the circumference of the first annular support member 810. When the showerhead 300 is tilted, the showerhead 300 moves relative to the first annular support member 810. The spacing in the radially inner annular gap 850 becomes smaller at some radial positions of the first annular support member 810, which changes the first gas flow into the backside volume. By splitting the backside gas into two annular gas flows and directing more of the backside gas into the radially outer annular gas flow, the showerhead 300 reduces the effect of the variation due to tilt. The radial uniformity of the deposition is significantly less affected by tilt compared to showerheads that provide only a single backside gas flow path.

[0145] The foregoing description is merely exemplary in nature and is not intended to limit the disclosure, its application, or uses in any way. The broad teachings of the disclosure can be embodied in various forms. Thus, while the disclosure includes specific examples, the true scope of the disclosure should not be limited to such examples, since other modifications will become apparent upon review of the drawings, the specification, and the following claims. It should be understood that one or more steps in a method may be performed in different orders (or simultaneously) without altering the principles of the disclosure. Furthermore, although each embodiment is described above as having certain features, any one or more of these features described with respect to any embodiment of the disclosure can be implemented in other embodiments and / or combined with any features of the other embodiments (even if such combination is not explicitly described). In other words, the described embodiments are not mutually exclusive, and it is within the scope of the disclosure to substitute one or more embodiments for one another.

[0146] Spatial and functional relationships between elements (e.g., modules, circuit elements, semiconductor layers, etc.) are described using various terms such as "connected," "engaged," "coupled," "adjacent," "next to," "on," "above," "below," and "disposed." Also, when a relationship between a first element and a second element is described in the above disclosure, unless expressly described as "direct," the relationship may be a direct relationship in which there are no other intervening elements between the first element and the second element, but may also be an indirect relationship in which there are one or more intervening elements (spatial or functional) between the first element and the second element. As used herein, the phrase at least one of A, B, and C should be interpreted in the sense of a logic (A or B or C) using a non-exclusive logical OR, and not in the sense of "at least one of A, at least one of B, and at least one of C."

[0147] In some implementations, the controller is part of a system, and such a system may be part of the examples described above. Such a system may include semiconductor processing equipment, including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling system operations before, during, and after processing of a semiconductor wafer or substrate. Such electronics may be referred to as a "controller" and may control various components or subparts of one or more systems. The controller may be programmed to control any of the processes disclosed herein depending on the processing requirements and / or type of system. Such processes may include delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and motion settings, wafer loading and unloading from tools and other transfer tools connected or interlocked with a particular system, and / or wafer loading and unloading from load locks.

[0148] Broadly, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, i.e., microcontrollers, that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. The operational parameters may, in some embodiments, be part of a recipe defined by a process engineer to accomplish one or more processing steps in the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0149] The controller, in some embodiments, may be part of, coupled to, or a combination of a computer that is integrated or coupled with the system or otherwise networked to the system. For example, the controller may be in the "cloud" or all or part of a fab host computer system. This allows for remote access of wafer processing. The computer may allow remote access to the system to monitor the current progress of a fabrication operation, review the history of past fabrication operations, review trends or performance criteria from multiple fabrication operations, modify parameters of a current process, set processing steps following a current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide a process recipe to the system over a network. Such a network may include a local network or the Internet. The remote computer may include a user interface that allows entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data. Such data identifies parameters for each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool that the controller is configured to interface with or control. Thus, as discussed above, the controller may be distributed, for example, by having one or more individual controllers networked together and working together toward a common purpose (such as the processes and controls described herein). An example of a distributed controller for such purposes would include one or more integrated circuits on the chamber that communicate with one or more integrated circuits located remotely (e.g., at the platform level or as part of a remote computer) and coupled to control the process in the chamber.

[0150] Exemplary systems may include, but are not limited to, a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a tracking chamber or module, and any other semiconductor processing system that may be associated with or used in the fabrication and / or manufacturing of semiconductor wafers.

[0151] As described above, depending on the process step or steps being performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used for material transport to and from tool locations and / or load ports within a semiconductor manufacturing factory.

Claims

1. 1. A showerhead for a substrate processing system, comprising: an upper portion including a gas channel extending in a first direction and having a first width in a second direction perpendicular to the first direction; a lower portion connected to the upper portion, a faceplate including a plurality of gas through holes extending vertically through the faceplate in the first direction; a lower portion including a baffle plate disposed on a plurality of posts above the faceplate and below the outlets of the gas channels, the baffle plate including a plurality of baffle orifices and having a second width in the second direction in a range of 1.25 to 3 times the first width; a gas plenum defined between the upper portion and the lower portion, the gas plenum extending in the second direction, the gas plenum in fluid communication with the gas channel; Equipped with a shower head.

2. 10. The showerhead of claim 1, each of the plurality of baffle orifices is offset in the first direction with one of the plurality of gas through holes located below the baffle plate.

3. 10. The showerhead of claim 1, The plurality of baffle orifices are symmetrically disposed about a center of the baffle plate.

4. 10. The showerhead of claim 1, The second width is in the range of 1.75 to 2.5 times the first width.

5. 10. The showerhead of claim 1, the plurality of gas through holes have a first diameter and the plurality of baffle orifices have a second diameter greater than the first diameter.

6. 6. The showerhead of claim 5, The second diameter is in the range of 1.2 to 6 times larger than the first diameter.

7. 6. The showerhead of claim 5, The second diameter is in the range of 1.5 to 3 times larger than the first diameter.

8. 10. The showerhead of claim 1, The upper portion is The stem part and a first conical portion extending from the stem portion; a second conical portion extending from the first conical portion and including a radially outer edge attached to the lower portion; Including the shower head.

9. 9. The showerhead of claim 8, a side of the first conical portion forms a first acute angle with a side of the stem portion; a side of the second conical portion forms a second acute angle with a side of the stem portion; the first acute angle is smaller than the second acute angle; Shower head.

10. 10. The showerhead of claim 9, 13. The showerhead of claim 12, further comprising: P posts connected between the faceplate and the second conical portion of the upper portion, where P is an integer greater than one.

11. 11. The showerhead of claim 10, P is a shower head in the range of 8 to 24.

12. 12. The showerhead of claim 11, P is equal to 12, shower head.

13. 12. The showerhead of claim 11, The showerhead, wherein the P posts are arranged in a circle.

14. 12. The showerhead of claim 11, the P posts are disposed between a first radius corresponding to a radially inner edge of the second conical portion and a second radius corresponding to a radially outer edge of the second conical portion.

15. 9. The showerhead of claim 8, the gas channel has a first radius; The substrate-facing surface of the lower portion is a rounded portion extending from the first radius to a second radius; a first horizontal portion extending from the second radius to a third radius; a tapered portion extending from the third radius to a fourth radius; a second horizontal portion extending from the fourth radius to a fifth radius; Including, Shower head.

16. 16. The showerhead of claim 15, the third radius is in the range of 0.75 to 2.5 times the second width.

17. 16. The showerhead of claim 15, the baffle plate is disposed at 25% to 75% of the distance between the first horizontal portion and the faceplate in the first direction.

18. 10. The showerhead of claim 9, P access holes passing through the second conical portion of the upper portion; P posts connecting the faceplate to the second conical portion and extending into the P access holes, where P is an integer greater than one.

19. 10. The showerhead of claim 1, at least one of the baffle orifices at least partially overlaps with at least one of the gas through holes in the first direction.

20. 10. The showerhead of claim 1, at least one of the baffle orifices completely overlaps with at least one of the gas through holes in the first direction.

21. 10. The showerhead of claim 1, the gas through holes in the faceplate are disposed in a first zone and a second zone; a first of the plurality of gas through holes in the first zone having a first hole density; a second of the plurality of gas through holes disposed in the second zone having a second hole density; the second pore density is greater than the first pore density; Shower head.

22. 22. The showerhead of claim 21, the first zone extends to a first radius; the second zone extends from the first radius to a second radius; The first radius is equal to or greater than 0.7 times the second radius. Shower head.

23. The showerhead of claim 9 , a backside gas system configured to supply gas in a downward and radially outward direction along the stem portion, the first conical portion, and the second conical portion; A showerhead assembly comprising:

24. 24. The showerhead assembly of claim 23; a processing chamber including a top surface defining a cavity; an annular support disposed about the stem portion and in the cavity on the upper surface, the annular support including a radially inner surface and a radially outer surface; a first annular gap formed between the radially outer surface of the annular support and the cavity in the top surface of the processing chamber; a second annular gap formed between the radially inner surface of the annular support and the stem portion; Equipped with the backside gas system supplies the gas to the first annular gap and the second annular gap. Substrate processing system.

25. 1. A method for depositing a film on a substrate, comprising: A showerhead disposed in a processing chamber is used to deliver process gas to an exposed surface of the substrate, the showerhead comprising: an upper portion configured to receive the process gas and including a gas channel extending in a first direction and having a first width in a second direction orthogonal to the first direction; a lower portion comprising a faceplate having a plurality of gas through holes extending through the faceplate in the first direction; a gas plenum defined between the upper portion and the lower portion and extending in the second direction; redirecting process gas exiting the gas channels using a baffle plate located below the gas channels in the gas plenum and above the faceplate, the baffle plate including a plurality of baffle orifices extending through the baffle plate in the first direction, the baffle plate being located below the gas channels in the gas plenum and above the faceplate, the baffle plate including a plurality of baffle orifices extending through the baffle plate in the first direction; a first portion of the process gas is redirected from the first direction to the second direction by a portion of the baffle plate that is devoid of the plurality of baffle orifices; a second portion of the process gas passes through the plurality of orifices in the baffle plate and through one of the plurality of gas through holes disposed below the baffle plate; the baffle plate has a second width in the second direction in a range of 1.25 to 3 times the first width; method.

26. 26. The method of claim 25, The method, wherein the process gas comprises at least one of a reactant and a precursor.

27. 27. The method of claim 26, The method further comprising exposing the substrate to the at least one of the precursor and the reactant to form a dielectric material.

28. 28. The method of claim 27, The method further comprising treating the dielectric material with a densifying plasma to form a densified dielectric material.

29. 1. A showerhead for a substrate processing system, comprising: an upper portion including a stem portion, a first conical portion extending from the stem portion, and a second conical portion extending from the first conical portion; a gas channel extending through the upper portion in a first direction and having a first radius; a lower portion including a radially outer edge connected to said upper portion, a faceplate including a plurality of gas through holes extending through the faceplate in said first direction, and a baffle plate including a plurality of baffle orifices disposed on a plurality of posts on said faceplate and extending through the baffle plate; a gas plenum defined between a first surface of the upper portion and the lower portion, the gas plenum extending in a second direction perpendicular to the first direction; Equipped with the first surface of the upper portion includes a rounded portion extending from the first radius to a second radius, a first horizontal portion extending from the second radius to a third radius, a tapered portion extending at an acute angle from the third radius to a fourth radius, and a second horizontal portion extending from the fourth radius to a fifth radius. Shower head.

30. 1. A showerhead for a substrate processing system, comprising: an upper portion including a stem portion, a first conical portion including a side surface extending from the stem portion at a first acute angle relative to a side surface of the stem portion, a second conical portion including a side surface extending from the first conical portion and forming a second acute angle with the side surface of the stem portion that is greater than the first acute angle, and a gas channel extending through the upper portion in a first direction; a lower portion including a radially outer edge connected to said upper portion, a faceplate including a plurality of gas through holes extending through said faceplate in said first direction, and a baffle plate including a plurality of baffle orifices disposed on a plurality of posts on said faceplate and extending through said baffle plate in said first direction; a gas plenum defined between the upper and lower portions; Equipped with the faceplate includes a first zone extending to a first radius and a second zone extending from the first radius to a second radius, a first of the plurality of gas through holes disposed in the first zone having a first hole density and a second of the plurality of gas through holes disposed in the second zone having a second hole density, the second hole density being greater than the first hole density; Shower head.

31. 1. A showerhead assembly for a substrate processing system, comprising: an upper portion including a stem portion, a first conical portion including a side extending from the stem portion at a first acute angle relative to a side of the stem portion, a second conical portion including a side extending from the first conical portion and forming a second acute angle with the side of the stem portion that is greater than the first acute angle, and a gas channel extending in a first direction through the upper portion; a lower portion including a radially outer edge connected to said upper portion, a faceplate including a plurality of gas through holes extending through said faceplate in said first direction, and a baffle plate including a plurality of baffle orifices disposed on a plurality of posts between said faceplate and said gas channels and extending through said baffle plate in said first direction; a gas plenum defined between the upper portion and the lower portion and extending in a second direction perpendicular to the first direction; a backside gas system configured to supply gas along the stem portion, the first conical portion, and the second conical portion during substrate processing; A showerhead assembly comprising:

32. a processing chamber including an upper chamber surface defining a first cavity; a showerhead including an upper portion, a lower portion including a faceplate, and a gas plenum disposed between the upper portion and the lower portion; a first annular support member disposed in the first cavity and defining a second cavity configured to receive the upper portion of the showerhead; Equipped with The first annular support member comprises: a first annular gap located between a radially inner surface of the second cavity and a radially outer surface of the upper portion of the showerhead; a second annular gap located between the radially outer surface of the first annular support member and the radially inner surface of the first cavity; Define a backside gas is split by the first annular support member into a first gas flow to the first annular gap and a second gas flow to the second annular gap; Shower head assembly.

33. 33. The showerhead assembly of claim 32, the first annular support member includes an upper annular portion and a lower annular portion extending downwardly from the upper annular portion; the second cavity communicates with the upper annular portion and the lower annular portion; The upper annular portion has an outer diameter greater than an outer diameter of the lower annular portion. Shower head assembly.

34. 33. The showerhead assembly of claim 32, the first annular support member includes a plurality of channels communicating from a radially inner surface of the first annular support member to a radially outer surface of the first annular support member.

35. 35. The showerhead assembly of claim 34, the second gas flow passes through the plurality of channels to the second annular gap.

36. 36. The showerhead assembly of claim 35, a first protrusion extending radially inward from the radially inner surface of the first annular support member to restrict a flow of gas into the first annular gap.

37. 33. The showerhead assembly of claim 32, a second annular support member including a gas channel; an annular support plate connected to the second annular support member, the annular support plate comprising: an annular opening in fluid communication with an outlet of the gas channel of the second annular support member; a first protrusion extending radially inward from the radially inner surface of the annular support plate toward an outer surface of the first annular support member and restricting gas flow from the gas channel to the first annular gap and the second annular gap.

38. 33. The showerhead assembly of claim 32, the first gas flow through the first annular gap is less than the second gas flow through the second annular gap.

39. 40. The showerhead assembly of claim 38, the second gas flow is in the range of 60% to 90% of the gas flowing through the first and second annular gaps, and the first gas flow is in the range of 10% to 40% of the gas flowing through the first and second annular gaps.

40. 40. The showerhead assembly of claim 38, the second gas flow is in the range of 68% to 76% of the gas flowing through the first and second annular gaps, and the first gas flow is in the range of 24% to 32% of the gas flowing through the first and second annular gaps.

41. 33. The showerhead assembly of claim 32, a tilt mechanism configured to tilt the showerhead relative to the first annular support member; Further equipped with When the tilt mechanism tilts the showerhead relative to a central position, the first annular gap narrows at a first radial position. Shower head assembly.

42. 38. The showerhead assembly of claim 37, the showerhead assembly further comprising a bellows disposed between a first surface of the first annular support member and a second surface of the annular support plate.

43. 43. The showerhead assembly of claim 42, the upper portion of the showerhead includes a stem portion, a first conical portion extending from the stem portion, and a second conical portion extending from the first conical portion; the first gas flow and the second gas flow are directed across the stem portion, the first conical portion, and the second conical portion. Shower head assembly.

44. 44. The showerhead assembly of claim 43, the first conical portion includes a side surface extending from the stem portion at a first acute angle relative to a side surface of the stem portion; the second conical portion includes a side surface extending from the first conical portion and forming a second acute angle with the side surface of the stem portion; the second acute angle is greater than the first acute angle; Shower head assembly.

45. 33. The showerhead assembly of claim 32, the faceplate includes a plurality of gas through holes extending vertically through the faceplate in a first direction; the upper portion of the showerhead includes a gas channel extending in the first direction and having a first width in a second direction perpendicular to the first direction. Shower head assembly.

46. 46. ​​The showerhead assembly of claim 45, 11. The showerhead assembly, further comprising a baffle plate disposed on a plurality of posts above the faceplate and below the outlets of the gas channels, the baffle plate including a plurality of baffle orifices and having a second width in the second direction in a range of 1.25 to 3 times the first width.

47. 47. The showerhead assembly of claim 46, each of the plurality of baffle orifices is offset in the first direction with one of the plurality of gas through holes located below the baffle plate.

48. 47. The showerhead assembly of claim 46, the plurality of baffle orifices are symmetrically disposed about a center of the baffle plate.

49. 49. The showerhead assembly of claim 48, the second width is in the range of 1.75 to 2.5 times the first width.

50. 49. The showerhead assembly of claim 48, the plurality of gas through holes have a first diameter and the plurality of baffle orifices have a second diameter greater than the first diameter.

51. 51. The showerhead assembly of claim 50, the second diameter is in the range of 1.2 to 6 times larger than the first diameter.

52. 51. The showerhead assembly of claim 50, the second diameter is in the range of 1.5 to 3 times larger than the first diameter.

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