Semiconductor Substrate Heating Device, Semiconductor Device, and Temperature Control Method

Abstract

The present invention provides a semiconductor substrate heating device including a heating cavity, a main heating unit, a compensation control unit, and at least one temperature compensation unit. A compensation control unit and several temperature compensation units are provided inside the heating cavity of the semiconductor substrate heating device. The upper surface of the compensation control unit is arranged corresponding to the bottom surface of the heating plate. Several temperature compensation units provided between the heating plate and the compensation control unit and communicatively connected to the compensation control unit are respectively arranged corresponding to several temperature control compensation regions on the bottom surface of the heating plate, avoiding complex wire design. Under the control of the compensation control unit, temperature compensation adjustment can be performed on the temperature compensation regions, effectively controlling the temperature uniformity of the semiconductor substrate while minimizing the manufacturing and maintenance costs.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and more particularly to a semiconductor substrate heating device, a semiconductor device, and a temperature control method.

Background Art

[0002] Currently, during the processing of semiconductor substrates, it is necessary to frequently use substrate baking devices. In the heating baking process, the temperature uniformity of the substrate is very important for whether the process capability index can be achieved. In the current prior art, for example, the Chinese patent application with the publication number CN103792974A adopts technical solutions to optimize the heating circuit of the heater and appropriately increase the number of heater zones to improve the temperature uniformity of the heating plate.

[0003] However, increasing the number of heater zones will significantly increase the heater development cycle and research and development costs, significantly increase the cost of the temperature control part, and at the same time increase the space for installing hardware. More stringent management and control requirements are needed during heater manufacturing, which makes the yield of the heater prone to decrease, leading to an increase in the cost of the heater.

[0004] By adding zones to optimize the heating circuit, more conductor designs are required, the wiring becomes more complex, and it becomes difficult to design the peripheral structure of the heater.

[0005] Therefore, in order to solve the above problems existing in the prior art, it is necessary to develop a new semiconductor substrate heating device.

Summary of the Invention

[0006] An object of the present invention is to provide a semiconductor substrate heating device, a semiconductor device including the semiconductor substrate heating device, and a temperature control method for the semiconductor device, thereby effectively controlling the temperature uniformity of the semiconductor substrate while minimizing manufacturing and maintenance costs.

[0007] To achieve the above object, the semiconductor substrate heating apparatus of the present invention includes: a heating cavity, a main heating unit including a heating plate provided inside the heating cavity, and at least one temperature control compensation region included in the bottom surface of the heating plate, a compensation control unit provided inside the heating cavity, the upper surface of which is adjacent to the bottom surface of the heating plate, and at least one temperature compensation unit provided between the heating plate and the compensation control unit and communicatively connected to the compensation control unit. The temperature compensation unit and the temperature control compensation region are arranged in correspondence, and under the control of the compensation control unit, temperature compensation adjustment is performed on the temperature control compensation region.

[0008] The beneficial effect of the semiconductor substrate heating apparatus of the present invention is that a compensation control unit and several temperature compensation units are provided inside the heating cavity of the semiconductor substrate heating apparatus, the upper surface of the compensation control unit is adjacent to the bottom surface of the heating plate, several temperature compensation units provided between the heating plate and the compensation control unit and communicatively connected to the compensation control unit are arranged in one-to-one correspondence with several temperature control compensation regions provided on the bottom surface of the heating plate, avoiding complex wiring design, and under the control of the compensation control unit, temperature compensation adjustment can be performed on the temperature control compensation region, effectively controlling the temperature uniformity of the semiconductor substrate while minimizing the manufacturing and maintenance costs.

[0009] Preferably, the temperature compensation unit includes an auxiliary temperature adjustment unit communicatively connected to the compensation control unit, and the distance between the uppermost end of the auxiliary temperature adjustment unit and the corresponding temperature control compensation region is 0 or more.

[0010] More preferably, the auxiliary temperature adjustment unit includes a heat conduction element or a cooling element.

[0011] Preferably, the temperature compensation unit further includes a fixing part connected to the auxiliary temperature adjustment part, and the auxiliary temperature adjustment part is fixed to the corresponding temperature control compensation area through the fixing part.

[0012] Preferably, the semiconductor substrate heating device further includes a partition plate provided between the main heating part and the compensation control part, and the temperature compensation unit is provided on the partition plate.

[0013] More preferably, the constituent material of the partition plate includes a heat insulating material.

[0014] More preferably, the number of the partition plates is at least two, and the temperature compensation unit is locked between the adjacent partition plates.

[0015] Preferably, the temperature compensation unit further includes a support part provided at the bottom of the auxiliary temperature adjustment part and an elastic part provided inside the support part. The support part is provided on the partition plate. Due to the action of the support part, the elastic part applies a force to the auxiliary temperature adjustment part in the direction corresponding to the temperature control compensation area, so as to adjust the distance between the uppermost end of the auxiliary temperature adjustment part and the corresponding temperature control compensation area.

[0016] More preferably, the support part includes an inner support part for supporting the auxiliary temperature adjustment part and an outer support part surrounding the inner support part, and there is a pitch between the outer wall of the inner support part and the outer wall of the outer support part.

[0017] More preferably, one end of the elastic part is provided inside the outer support part, and the other end contacts the bottom of the inner support part.

[0018] More preferably, the elastic part surrounds the bottom of the inner support part and contacts the partition plate.

[0019] More preferably, a lead hole for passing a lead is provided inside the inner support part.

[0020] More preferably, a lead hole for passing a lead is provided inside the outer support portion.

[0021] More preferably, the main heating portion further includes a main control portion for temperature control, the compensation control portion is communicatively connected to the main control portion, and performs the temperature compensation adjustment under the control of the main control portion.

[0022] More preferably, the upper surface of the heating plate includes a substrate contact region, the bottom surface of the heating plate includes a bottom surface control region corresponding to the substrate contact region, and the temperature control compensation region is an arbitrary region within the bottom surface control region.

[0023] The semiconductor device of the present invention includes the semiconductor substrate heating device.

[0024] The semiconductor device further includes a temperature calibration portion, the main heating portion further includes a main control portion, the temperature calibration portion contacts the heating surface of the heating plate in the semiconductor substrate heating device to obtain temperature calibration information and feed it back, the main control portion is provided outside the heating cavity, and is communicatively connected to at least one of the compensation control portion and the temperature calibration portion.

[0025] The temperature control method of the semiconductor device of the present invention is as follows. Step S0 of providing the semiconductor device including a heating cavity, a main heating portion, a compensation control portion, and at least one temperature compensation unit; Step S1 of driving at least one of the temperature compensation units so that the compensation control portion performs temperature compensation adjustment on the heating plate of the main heating portion.

Brief Description of the Drawings

[0026]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Embodiments for Carrying Out the Invention

[0027] In order to more clearly clarify the objectives, technical solutions, and advantages of the embodiments of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are some but not all of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts shall be included within the protection scope of the present invention. Unless otherwise defined, technical or scientific terms used in this specification should have the ordinary meaning as understood by those skilled in the technical field to which the present invention pertains. Similar words such as "including" used in this specification mean that the elements or things appearing before the word include the elements or things cited after the word and their equivalents, but do not exclude other elements or things.

[0028] Embodiments of the present invention provide a semiconductor substrate heating device that can improve the uniformity of temperature control of a semiconductor substrate while minimizing the manufacturing and maintenance costs.

[0029] The semiconductor substrate heating device according to an embodiment of the present invention includes a heating cavity, a main heating unit, a compensation control unit, and at least one temperature compensation unit.

[0030] In some embodiments, the main heating unit includes a main control unit, a heating plate, and a main heating unit provided on the heating plate, and the main control unit is communicatively connected to the main heating unit. The main control unit is used for temperature control. The main control unit performs temperature control on the main heating unit, and the main heating unit generates heat on the heating surface of the heating plate. The semiconductor substrate is disposed facing the heating surface of the heating plate, and the heating surface of the heating plate transfers heat to the semiconductor substrate.

[0031] Specifically, the structural relationship among the main control unit, the heating plate, and the main heating unit, and the specific embodiments are conventional technical means for those skilled in the art, and will not be repeated here.

[0032] FIG. 1 is a schematic diagram of a partial structure of a semiconductor substrate heating apparatus according to an embodiment of the present invention.

[0033] Referring to FIG. 1, in a semiconductor substrate heating apparatus 1, a heating plate 11, at least one temperature compensation unit 12, and a compensation control unit 13 are provided inside a heating cavity (not shown).

[0034] In some embodiments, at least one temperature control compensation region is included on the bottom surface of the heating plate 11.

[0035] In some embodiments, a substrate contact region is included on the upper surface of the heating plate, a bottom surface control region corresponding to the substrate contact region is included on the bottom surface of the heating plate, and the temperature control compensation region is any region within the bottom surface control region.

[0036] The specific range of the temperature control compensation region and the distance between adjacent temperature control compensation regions are jointly determined by the structural performance of the heating plate 11 itself, process requirements, and mounting conditions.

[0037] In some specific embodiments, some of the temperature control compensation regions are distributed in an array relative to the center of the bottom surface control region. Specific array distribution types include, but are not limited to, circular arrays and rectangular arrays.

[0038] In some embodiments, referring to FIG. 1, the upper surface of the compensation control unit 13 is adjacent to the bottom surface of the heating plate 11, that is, a cavity region is formed between the upper surface of the compensation control unit 13 and the bottom surface of the heating plate 11. At least one of the temperature compensation units 12 is provided in the region between the heating plate 11 and the compensation control unit 13 and is communicatively connected to the compensation control unit 13.

[0039] In some embodiments, the temperature compensation unit 12 and the temperature control compensation region are arranged in correspondence, and temperature compensation adjustment is performed on the temperature control compensation region under the control of the compensation control unit 13.

[0040] In some embodiments, the compensation control unit 13 is communicatively connected to the main control unit of the main heating unit, and temperature compensation adjustment is performed under the control of the main control unit.

[0041] In some embodiments, the main control unit is provided outside the heating cavity, and at least one of the temperature compensation units 12 is provided in the region between the heating plate 11 and the compensation control unit 13 and is communicatively connected to the compensation control unit 13, thereby concentrating the wiring in the heating cavity between the heating plate 11 and the compensation control unit 13, avoiding complex wire designs, and facilitating the detachment and maintenance of the semiconductor substrate heating device.

[0042] Furthermore, the compensation control unit 13 and the main control unit are electrically connected by a single communication lead, and by controlling the compensation control unit 13, temperature compensation adjustment of the heating plate 11 can be realized, further avoiding complex wire designs, and facilitating the detachment and maintenance of the semiconductor substrate heating device.

[0043] In some specific embodiments, the compensation control unit 13 is a circuit board, and a control circuit for controlling at least one of the temperature compensation units 12 is provided on the surface of the circuit board. The specific implementation method of the control may be synchronous control or independent control.

[0044] In some specific embodiments, the compensation control unit 13 includes a printed circuit board (Printed Circuit Board, PCB) and a control board composed of functional devices provided on the PCB board.

[0045] In some specific embodiments, the compensation control unit 13 further includes a heat insulation structure for sealing the control board. The heat insulation structure can cover at least one surface of the control board, for example, the upper surface of the control part facing the bottom surface of the heating plate 11, without affecting the electrical connection between the compensation control unit 13 and the temperature compensation unit 12, thereby avoiding the influence of heat on the function realization of the compensation control unit 13.

[0046] In some specific embodiments, the main control unit is a host computer.

[0047] In some embodiments, referring to FIG. 1, the temperature compensation unit 12 includes an auxiliary temperature adjustment unit 121 communicatively connected to the compensation control unit 13.

[0048] In some embodiments, the auxiliary temperature adjustment unit 121 includes a heat conduction element or a cooling element for heating or cooling a temperature control compensation area corresponding to the bottom surface of the heating plate 11.

[0049] In some embodiments, the auxiliary temperature adjustment unit 112 and the heating plate 11 interact in a contact type, that is, the distance between the uppermost end of the auxiliary temperature adjustment unit 121 and the corresponding temperature control compensation area (not shown) is 0, whereby the uppermost end of the auxiliary temperature adjustment unit 121 is in close contact with the temperature control compensation area (not shown).

[0050] In some embodiments, the temperature compensation unit 12 further includes a fixing portion connected to the auxiliary temperature adjustment portion 121, and the auxiliary temperature adjustment portion 121 is fixed to the corresponding temperature control compensation region through the fixing portion.

[0051] In some specific embodiments, the heat conduction element of the auxiliary temperature adjustment portion 121 is a ceramic heating sheet.

[0052] In some specific embodiments, the cooling element of the auxiliary temperature adjustment portion 121 is a semiconductor cooling chip.

[0053] In some specific embodiments, the fixing portion is a heat-resistant adhesive.

[0054] In some embodiments, the auxiliary temperature adjustment portion 121 is a small gas supply assembly.

[0055] In some embodiments, the small gas supply assembly is configured to spray clean refrigerant gas into the corresponding temperature control compensation region under the control of the compensation control unit 13.

[0056] In some embodiments, the small gas supply assembly includes a gas circulation pipeline correspondingly arranged with each temperature control compensation region, and the small gas supply assembly is configured to circulate clean refrigerant gas in the gas circulation pipeline through the gas circulation pipeline under the control of the compensation control unit 13 so as to cool the corresponding temperature control compensation region.

[0057] In some embodiments, the auxiliary temperature adjustment portion 121 is a small liquid supply assembly.

[0058] In some embodiments, the small liquid supply assembly includes a liquid circulation pipeline disposed corresponding to each of the temperature control compensation regions, and the small liquid supply assembly is configured to circulate a heating liquid in the liquid circulation pipeline under the control of the compensation control portion 13 so as to raise the temperature of the corresponding temperature control compensation region.

[0059] FIG. 2 is a schematic partial structure diagram of another semiconductor substrate heating device according to an embodiment of the present invention. FIG. 3 is a schematic enlarged structure diagram of part A shown in FIG. 2.

[0060] In some embodiments, referring to FIGS. 2 and 3, the temperature compensation unit 12 is suspended between the heating plate 11 and the compensation control unit 13, whereby the distance between the uppermost end of the auxiliary temperature adjustment unit 121 and the corresponding temperature control compensation region is greater than 0. The auxiliary temperature adjustment unit 121 and the heating plate 11 interact non-contact.

[0061] In some specific embodiments, the heating element of the auxiliary temperature adjustment unit 121 is an LED light or a halogen lamp.

[0062] In some embodiments, the semiconductor substrate heating device further includes a partition plate provided inside the heating cavity. Referring to FIGS. 2 and 3, the partition plate 21 is provided between the heating plate 11 and the compensation control unit 13, and the temperature compensation unit 12 is provided on the partition plate 21.

[0063] In some embodiments, the constituent material of the partition plate 21 includes a heat insulating material, which is beneficial for maintaining the heat transfer effect of the heating plate 11.

[0064] In some embodiments, the number of the partition plates 21 is at least two, and the temperature compensation unit 12 is locked between adjacent partition plates 21. Referring to FIG. 3, the partition plate 21 includes an adjacent first partition plate 31 and a second partition plate 32, and the temperature compensation unit 12 is locked between the first partition plate 31 and the second partition plate 32.

[0065] FIG. 4 is a schematic structural diagram of a temperature compensation unit according to an embodiment of the present invention. FIG. 5 is a schematic diagram of the internal structure of the temperature compensation unit shown in FIG. 4.

[0066] In some embodiments, referring to FIGS. 3 to 5, the temperature compensation unit 12 further includes a support portion 41 provided at the bottom of the auxiliary temperature adjustment portion 121 and an elastic portion 51 provided inside the support portion 41. The support portion 41 is provided on the partition plate 21, and due to the action of the support portion 41, the elastic portion 51 applies a force to the auxiliary temperature adjustment portion 121 in a direction corresponding to the temperature control compensation region (not shown), so as to adjust the distance between the uppermost end of the auxiliary temperature adjustment portion 121 and the corresponding temperature control compensation region (not shown).

[0067] In some embodiments, due to the action of the support portion 41, the elastic portion 51 applies a force to the auxiliary temperature adjustment portion 121 in a direction corresponding to the temperature control compensation region (not shown), so that the uppermost end of the auxiliary temperature adjustment portion 121 is in close contact with the corresponding temperature control compensation region (not shown).

[0068] In some embodiments, referring to FIGS. 3 and 5, the support portion 41 includes an inner support portion 411 that supports the auxiliary temperature adjustment portion 121 and an outer support portion 412 that surrounds the inner support portion 411, and there is a pitch between the outer wall of the inner support portion 411 and the outer wall of the outer support portion 412.

[0069] In some embodiments, referring to FIGS. 3 and 5, one end of the elastic portion 51 is provided inside the outer support portion 412, and the other end contacts the bottom of the inner support portion 411.

[0070] In some embodiments, one end of the elastic part 51 is fixed inside the outer support part, and the other end contacts the bottom of the inner support part 411. The elastic part 51 is in a compressed operating state, and a force is applied to the auxiliary temperature adjustment part 121 in the direction corresponding to the temperature control compensation area (not shown), so that the uppermost end of the auxiliary temperature adjustment part 121 is in close contact with the corresponding temperature control compensation area (not shown).

[0071] In some embodiments, referring to FIG. 5, the top part of the outer support part 412 includes a concave structure 52. The auxiliary temperature adjustment part 121 is fixedly arranged on the top part of the inner support part 411, and at least a part of the inner support part 411 is accommodated inside the concave structure 52. The concave structure 52 defines the radial movement range of the inner support part 411, so that the auxiliary temperature adjustment part 121 can effectively act on the corresponding temperature control compensation area (not shown).

[0072] In some embodiments, referring to FIGS. 3 and 5, a first lead hole 53 for passing a lead is provided inside the inner support part 411, and a second lead hole 54 for passing a lead is provided inside the outer support part 412. The first lead hole 53 and the second lead hole 54 are communicated with each other. The elastic part 51 has a hollow structure, and both ends are communicated with the first lead hole 53 and the second lead hole 54, so that a communication lead (not shown) provided in the compensation control part 13 can be electrically connected to the auxiliary temperature adjustment part 121 through the second lead hole 54, the elastic part 51 and the first lead hole 53.

[0073] In some specific embodiments, the elastic part 51 is a spring.

[0074] FIG. 6 is a schematic diagram of the internal structure of another temperature compensation unit according to an embodiment of the present invention, and FIG. 7 is a schematic diagram of the operating state of the temperature compensation unit shown in FIG. 6 in a heating cavity.

[0075] In some embodiments, referring to FIGS. 6 and 7, the elastic portion 51 surrounds the bottom of the inner support portion 411 and contacts the partition plate 21. Specifically, after the outer support portion 412 penetrates through the first partition plate 31, the bottom thereof contacts the second partition plate 32, and the protrusion structure 63 at the bottom of the outer support portion 412 is locked between the first partition plate 31 and the second partition plate 32, whereby the outer support portion 412 is removably and fixedly connected to the partition plate 21. The bottom of the elastic portion 51 contacts the top portion of the second partition plate 32.

[0076] In some embodiments, referring to FIGS. 6 and 7, the inner support portion 411 includes a bottom protrusion structure 61, and the elastic portion 51 movably surrounds the bottom protrusion structure 61. The elastic portion 51 is in a compressed operating state, and applies a force to the auxiliary temperature adjustment portion 121 in a direction corresponding to the temperature control compensation region (not shown), so that the uppermost end of the auxiliary temperature adjustment portion 121 is in close contact with the corresponding temperature control compensation region (not shown).

[0077] In some embodiments, referring to FIGS. 6 and 7, the inner support portion 411 includes a top protrusion structure 62, the top portion of the outer support portion 412 surrounds the top protrusion structure 62, and the top protrusion structure 62 defines the movement range of the outer support portion 412 in the axial direction.

[0078] In some embodiments, referring to FIGS. 6 and 7, a communication lead (not shown) provided in the compensation control portion 13 can be electrically connected to the auxiliary temperature adjustment portion 121 through the first lead hole 53 provided in the inner support portion 411.

[0079] FIG. 8 is a schematic diagram of the operating state of the semiconductor device according to an embodiment of the present invention.

[0080] Referring to FIGS. 1 and 8, the semiconductor device shown in FIG. 8 includes the semiconductor substrate heating device 1 and the temperature calibration unit 83 shown in FIG. 1. The outer wall 15 and the sealing plate 14 shown in FIG. 1 are the constituent structures of the accommodation cavity 82 shown in FIG. 8, and the accommodation cavity 82 and the cover 81 constitute a heating cavity.

[0081] Referring to FIGS. 1 and 8, the temperature calibration unit 83 is in contact with the upper surface of the heating plate 11, acquires temperature calibration information and feeds it back. The main control unit 86 is provided outside the heating cavity (not shown) and is communicatively connected to at least one of the compensation control unit 13 and the temperature calibration unit 84.

[0082] In some specific embodiments, the temperature calibration unit 83 includes a temperature measurement wafer 84 and a temperature sensor feedback device 85 that are communicatively connected. The temperature measurement wafer 84 is communicatively connected to the main control unit 86 via the temperature sensor feedback device 85.

[0083] In the temperature control method of the semiconductor device according to the embodiment of the present invention, at least one of the temperature compensation units 12 is driven by the compensation control unit 13 to perform temperature compensation adjustment on the heating plate 11.

[0084] In some embodiments, the step of driving at least one of the temperature compensation units 12 by the compensation control unit 13 to perform temperature compensation adjustment on the heating plate 11 includes controlling the compensation control unit 13 via the main control unit 86 and driving at least one of the temperature compensation units 12 to perform temperature compensation adjustment on the heating plate 11.

[0085] In some embodiments, before executing the step of controlling the compensation control unit 13 via the main control unit 86, the temperature measurement wafer 84 is placed on the upper surface of the heating plate 11, and each temperature control region of the heating plate 11 is heated up under the control of the main control unit 86, so that the temperature of the temperature measurement wafer 84 reaches the target temperature.

[0086] Specifically, during the temperature rise of the heating plate 11, the temperature sensor feedback device 85 feeds back the temperature values of each temperature measurement sampling point of the temperature measurement wafer 84 to the main control unit 86. The main control unit 86 compares the average temperature calculated based on the received temperature values of each temperature measurement sampling point with the target temperature, and determines whether the temperature measurement wafer reaches the target temperature.

[0087] In the prior art, usually, the temperature uniformity of the heating plate 11 is adjusted by performing zone-by-zone control on the heating plate 11. For example, the heating plate 11 is partitioned into 7 zones, 13 zones, 15 zones, etc. Considering the layout requirements of functional devices and the limitations of wiring installation, the zones of the heating plate 11 cannot be infinitely enlarged, and each zone includes several temperature measurement sampling points on the temperature measurement wafer 84. For example, when a specific zone is indicated from the temperature measurement wafer 84, for example, if the temperature uniformity of the first zone does not meet the process requirements and needs to be adjusted to increase the temperature, the main control unit 86 controls the first zone to increase the temperature. However, there are the following problems with such adjustment. The average temperature of some of the temperature measurement sampling points included in the first zone is lower than the target temperature, but the temperature of some of these temperature measurement sampling points is higher than the target temperature, and the temperature differences from the target temperature are probably different from each other. Even in each temperature control region where the temperature is lower than the target temperature, the temperature differences from the target temperature are probably different from each other. It can be seen that the temperature adjustment of a single zone easily causes the problem of temperature non-uniformity again over the entire range of the heating plate 11.

[0088] Also, in the above zone-by-zone control method, independent temperature control is required for each zone, so the cost of the temperature control unit increases significantly, and the more zones there are, the higher the cost.

[0089] In the technical solution of the embodiment of the present invention, after the temperature of the temperature measurement wafer 84 reaches the target temperature, temperature information of each temperature measurement region of the temperature measurement wafer 84 is obtained through the temperature sensor feedback device 85. According to these temperature information, several temperature control compensation regions where temperature compensation adjustment of the bottom surface of the heating plate 11 is not required are determined. The compensation control unit 13 is controlled to drive the corresponding temperature compensation unit 12 to increase or decrease the temperature to achieve the purpose of temperature compensation adjustment.

[0090] Although the embodiments of the present invention have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes are within the scope and spirit of the present invention described in the claims. Furthermore, the present invention described in this specification allows for other embodiments and can be implemented or realized in various ways.

Claims

1. A heating cavity and, a main heating part including a heating plate provided inside the heating cavity, wherein at least one temperature control compensation area is included on the bottom surface of the heating plate, a compensation control part provided inside the heating cavity, the upper surface of which is adjacent to the bottom surface of the heating plate, at least one temperature compensation unit provided between the heating plate and the compensation control part and communicatively connected to the compensation control part, wherein the temperature compensation unit is arranged corresponding to the temperature control compensation area, and temperature compensation adjustment is performed on the temperature control compensation area under the control of the compensation control part. A semiconductor substrate heating device characterized by this.

2. The temperature compensation unit includes an auxiliary temperature adjustment part communicatively connected to the compensation control part, and the distance between the uppermost end of the auxiliary temperature adjustment part and the corresponding temperature control compensation area is 0 or more. The semiconductor substrate heating device according to Claim 1, characterized by this.

3. The auxiliary temperature adjustment part includes a heat conduction element or a cooling element. The semiconductor substrate heating device according to Claim 2, characterized by this.

4. The temperature compensation unit further includes a fixing part connected to the auxiliary temperature adjustment part, and the auxiliary temperature adjustment part is fixed to the corresponding temperature control compensation area via the fixing part. The semiconductor substrate heating device according to Claim 2, characterized by this.

5. It further includes a partition plate provided between the main heating part and the compensation control part, and the temperature compensation unit is provided on the partition plate. The semiconductor substrate heating device according to Claim 2, characterized by this.

6. The constituent material of the partition plate includes a heat insulating material. The semiconductor substrate heating device according to Claim 5, characterized by this.

7. The number of the partition plates is at least two, and the temperature compensation unit is locked between adjacent partition plates. The semiconductor substrate heating device according to Claim 5, characterized by this.

8. The temperature compensation unit further includes a support part provided at the bottom of the auxiliary temperature adjustment part and an elastic part provided inside the support part. The support part is provided on the partition plate, and by the action of the support part, the elastic part applies a force to the auxiliary temperature adjustment part in the direction corresponding to the temperature control compensation area to adjust the distance between the uppermost end of the auxiliary temperature adjustment part and the corresponding temperature control compensation area. The semiconductor substrate heating device according to Claim 5, characterized by this.

9. The support part includes an inner support part that supports the auxiliary temperature adjustment part and an outer support part that surrounds the inner support part, and there is a pitch between the outer wall of the inner support part and the outer wall of the outer support part. The semiconductor substrate heating device according to claim 8 is characterized in that.

10. One end of the elastic part is provided inside the outer support part, and the other end contacts the bottom of the inner support part. The semiconductor substrate heating device according to claim 9 is characterized in that.

11. The elastic part surrounds the bottom of the inner support part and contacts the partition plate. The semiconductor substrate heating device according to claim 9 is characterized in that.

12. A lead hole for passing a lead is provided inside the inner support part. The semiconductor substrate heating device according to claim 9 is characterized in that.

13. A lead hole for passing a lead is provided inside the outer support part. The semiconductor substrate heating device according to claim 9 is characterized in that.

14. The main heating part further includes a main control part for temperature control, the compensation control part is communicatively connected to the main control part, and performs the temperature compensation adjustment under the control of the main control part. The semiconductor substrate heating device according to claim 1 is characterized in that.

15. The upper surface of the heating plate includes a substrate contact area, the bottom surface of the heating plate includes a bottom surface control area corresponding to the substrate contact area, and the temperature control compensation area is any area within the bottom surface control area. The semiconductor substrate heating device according to claim 1 is characterized in that.

16. A semiconductor device, characterized in that it includes the semiconductor substrate heating device according to any one of claims 1 to 15.

17. Further including a temperature calibration part, the main heating part further includes a main control part, the temperature calibration part contacts the heating surface of the heating plate in the semiconductor substrate heating device to obtain temperature calibration information and feedback it, the main control part is provided outside the heating cavity, and is communicatively connected to at least one of the compensation control part and the temperature calibration part. The semiconductor device according to claim 16 is characterized in that.

18. Step S0 of providing the semiconductor device including a heating cavity, a main heating part, a compensation control part, and at least one temperature compensation unit; Step S1 of driving at least one of the temperature compensation units so that the compensation control unit performs temperature compensation adjustment on the heating plate of the main heating unit, characterized by including, the temperature control method of the semiconductor device according to any one of claims 16 to 17.

Images