Precursors for forming yttrium- or scandium-containing thin films, a method for forming yttrium- or scandium-containing thin films using the same, and semiconductor devices including the yttrium- or scandium-containing thin films

Abstract

The present invention relates to a precursor for forming a yttrium- or scandium-containing thin film, which comprises a compound represented by Chemical Formula 1, a method for forming a yttrium- or scandium-containing thin film using the same, and a semiconductor device including the yttrium- or scandium-containing thin film. The precursor contains yttrium or scandium as a central metal atom and includes a cyclopentadienyl ligand that provides properties such as a low melting point and high volatility. Together with this, by including a novel amidinate ligand that provides properties such as high structural stability, low viscosity, high volatility, high heat resistance, and a solid state having a liquid state at room temperature or a low melting point, it exhibits physical properties suitable for use in a thin film forming process and can form a high-quality thin film.

Description

Technical Field

[0001] The present invention relates to a precursor for forming a yttrium- or scandium-containing thin film, a method for forming a yttrium- or scandium-containing thin film using the same, and a semiconductor device including the yttrium- or scandium-containing thin film. More specifically, the present invention relates to a precursor for forming a yttrium- or scandium-containing thin film that has a low viscosity, high heat resistance, and high volatility due to a chemical structure including an amidinate ligand, and can form a high-quality thin film using the same, a method for forming a thin film using the same, and a semiconductor device including the thin film.

Background Art

[0002] With the improvement of the integration degree due to the miniaturization of the line width of semiconductor devices, the space allowed for realizing the capacitor structure is limited in terms of the line width, but there are limitations in the manufacturing method of semiconductor devices for realizing the capacitor structure with existing silicone-based dielectrics. In addition, while high-k thin films are applied to replace silicone-based dielectrics, there is a problem that the leakage current due to the bandgap deteriorates significantly.

[0003] As one of the solutions to solve such problems, a technology for forming a high-quality thin film is required, and for this purpose, it is necessary to optimize the precursor used for thin film formation.

[0004] Conventionally, as an example of a precursor optimization scheme, various doping precursors that can improve the characteristics of dielectric constant and leakage current have been proposed. However, the precursors are generally in a solid state or a liquid state with low volatility, and there is a risk of causing various problems in the thin film formation evaporation process due to particularly high viscosity. Therefore, it can be said that improving the physical properties of the precursor, such as high volatility and low viscosity characteristics, is a very important issue for optimizing the precursor for thin film formation.

[0005] For this purpose, various metal-containing precursors have been developed. For example, in Korean Patent Publication No. 10-2019-0008427, a lanthanide metal-containing precursor containing an aza-allyl ligand is known, and in Korean Patent Publication No. 10-2021-0089015, a yttrium metal-containing precursor containing a cyclopentadienyl ligand is known.

[0006] Considering such known technologies, in the case of complex compounds containing a cyclopentatienyl group or a cyclopentadienyl group to which a substituted or other ligand is bonded, compared with compounds containing β-diketonate or bis(trimethylsilyl)amide, they have a lower melting point and higher volatility, so there are advantages in using them as precursors in the thin film formation process.

[0007] For these reasons, in known technologies such as Korean Registered Patent No. 10-1660052, Korean Patent Publication No. 10-2019-0109142, and Korean Patent Publication No. 10-2021-0084297, a chemical structure in which cyclopentadienyl and amidinate are bonded by ligands is presented as a precursor containing yttrium or a lanthanide metal. The precursor to which such a ligand is bonded can improve the disadvantages of existing precursors with low vapor pressure and high viscosity, and it has been reported to be suitable for the thin film formation process.

Summary of the Invention

Problems to be Solved by the Invention

[0008] The present invention has been devised in view of the prior art as described above, and an object thereof is to provide a novel yttrium- or scandium-containing thin film forming precursor that can exhibit chemical properties suitable as a precursor for thin film formation.

[0009] Another object of the present invention is to provide a yttrium- or scandium-containing thin film forming precursor that exhibits chemical properties of low viscosity, high heat resistance, and high volatility, and is in a liquid state at room temperature or a solid state with a low melting point.

[0010] Furthermore, an object of the present invention is to provide a method for forming a thin film using the precursor.

[0011] Moreover, an object of the present invention is to provide a semiconductor element including the thin film.

Means for Solving the Problems

[0012] The precursor for forming a yttrium- or scandium-containing thin film of the present invention for achieving the above object is characterized by containing a compound represented by the following Chemical Formula 1.

Chem.

[0013] Also, the R2 may be a linear, branched or cyclic alkyl or alkenyl group having 2 to 4 carbon atoms.

[0014] Also, the R1 and R3 are each independently a linear, branched or cyclic alkyl or alkenyl group having 2 to 5 carbon atoms, and the R2 may be a linear, branched or cyclic alkyl or alkenyl group having 2 to 4 carbon atoms.

[0015] Also, the R1 and R3 may be methyl groups.

[0016] Also, the R2 may be an isopropyl group.

[0017] Further, each of R1 and R3 may independently be a linear alkyl group or alkenyl group having 1 to 5 carbon atoms.

[0018] Further, each of R1 and R3 is independently a linear alkyl group or alkenyl group having 1 to 5 carbon atoms, and R2 may be a linear alkyl group or alkenyl group having 1 to 4 carbon atoms.

[0019] Further, both R1 and R3 may be the same and may be an alkyl group or alkenyl group.

[0020] Further, all of R1 to R3 may be the same and may be an alkyl group or alkenyl group.

[0021] Further, the precursor for forming the yttrium- or scandium-containing thin film preferably has a viscosity of 60 cP or less.

[0022] Further, the precursor for forming the yttrium- or scandium-containing thin film preferably has a melting point of 70°C or less.

[0023] Further, the precursor for forming the thin film may further contain a solvent, and the solvent may be any one or more of saturated or unsaturated hydrocarbons, ketones, ethers, glymes, esters, tetrahydrofuran, and tertiary amines having 1 to C 16 Further, the solvent may be contained in an amount of 1 to 99% by weight based on the total weight of the precursor for forming the thin film.

[0024] The method for forming a yttrium- or scandium-containing thin film according to the present invention includes a step of forming a thin film on a substrate using the precursor for forming the thin film. The step of forming a thin film on the substrate includes a step of depositing the precursor for forming the thin film on the surface of the substrate to form a precursor thin film, and a step of reacting the precursor thin film with a reactive gas.

[0025] Further, the step of forming the precursor thin film may include a step of vaporizing the precursor for thin film formation and transferring it into the chamber.

[0026] Also, the vapor deposition can be performed by any one of a spin-on dielectric (SOD) process, a low temperature plasma (LTP) process, a chemical vapor deposition (CVD), a plasma enhanced chemical vapor deposition (PECVD), a high density plasma-chemical vapor deposition (HDPCVD) process, an atomic layer deposition (ALD) process, or a plasma-enhanced atomic layer deposition (PEALD) process.

[0027] Also, the step of forming a thin film containing yttrium or scandium on the substrate may include a step of supplying the precursor for thin film formation to the substrate and applying plasma to form a thin film.

[0028] Also, the semiconductor device of the present invention is characterized by including a thin film manufactured by the method for forming a thin film containing yttrium or scandium.

Advantages of the Invention

[0029] The precursor for forming a thin film containing yttrium or scandium according to the present invention includes a cyclopentadienyl and an amidinate ligand, so that it has excellent structural stability of the precursor compound, and exhibits characteristics of low viscosity, high volatility, high heat resistance, and a liquid state at room temperature or a solid state with a low melting point. Therefore, it shows physical properties suitable for use in the process of forming a thin film containing yttrium or scandium.

[0030] In addition, a high-quality yttrium- or scandium-containing thin film can be formed using the precursor, and a semiconductor device including the yttrium- or scandium-containing thin film manufactured by the thin film forming method can be provided.

Brief Description of the Drawings

[0031]

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Embodiments for Carrying Out the Invention

[0032] Hereinafter, the present invention will be described in more detail. The terms and words used in this specification and the claims should not be construed as being limited to their ordinary or dictionary meanings. In accordance with the principle that the inventor can appropriately define the concept of the terms in order to explain his invention in the best way, they should be construed in a meaning and concept consistent with the technical idea of the present invention. The precursor for forming a yttrium- or scandium-containing film according to the present invention is characterized by containing a compound represented by the following Chemical Formula 1.

Chem.

[0033] In Chemical Formula 1, R1 and R3 that constitute the amidinate ligand may be the same or different, but can be configured in various forms depending on the intended effect of the precursor that can be provided through the present invention.

[0034] Also, R2 that constitutes the amidinate ligand in Chemical Formula 1 may be a hydrogen atom or a linear, branched or cyclic alkyl group or alkenyl group having 1 to 4 carbon atoms, and non-limiting examples include n-alkyl groups such as an ethyl group, a propyl group, and a butyl group.

[0035] The compound represented by Chemical Formula 1 is a precursor having a chemical structure containing an amidinate ligand with yttrium or scandium as the central metal atom, contains a cyclopentadienyl ligand that provides characteristics such as a low melting point and high volatility, and together with this, contains a novel amidinate ligand having a structure different from the conventional one, so that it is possible to add characteristics such as high structural stability, low viscosity, high volatility, high heat resistance, and a liquid state at room temperature or a solid state having a low melting point.

[0036] That is, the precursor for forming a yttrium- or scandium-containing thin film according to the present invention has yttrium or scandium as the central metal and different ligands that can contribute to improving the characteristics of the precursor, particularly a novel amidinate ligand that provides excellent effects such as structural stability, low viscosity, high volatility, high heat resistance, and a solid state with a normal temperature liquid state or a low melting point. By including such a ligand, it exhibits physical properties suitable for use in the thin film formation process and can form a high-quality thin film.

[0037] The precursor for forming a thin film represented by Chemical Formula 1 can have various forms with different functional groups.

[0038] In one embodiment, R2 may be a linear, branched, or cyclic alkyl group or alkenyl group having 2 to 4 carbon atoms. When R2 has 2 or more carbon atoms, compared to the case of having 1 carbon atom, the asymmetry within the molecule increases, thereby reducing the intermolecular interference. As a result, the precursor containing the ligand is not only easily formed into a liquid state or a solid state with a low melting point but can also obtain the characteristic of low viscosity.

[0039] Also, R1 and R3 are each independently a linear, branched, or cyclic alkyl group or alkenyl group having 2 to 5 carbon atoms, and R2 may be a linear, branched, or cyclic alkyl group or alkenyl group having 2 to 4 carbon atoms. In one embodiment, R1 and R3 may be methyl groups, and R2 may be an isopropyl group.

[0040] Also, R1 and R3 may each independently be a linear alkyl group or alkenyl group having 1 to 5 carbon atoms.

[0041] A linear alkyl group or alkenyl group can obtain the effect of improving the volatility and vapor pressure by reducing the molecular weight through the structural minimization of the branched or cyclic ligand.

[0042] Therefore, in a ligand according to an embodiment of the present invention, each of R1 and R3 can be composed of a linear alkyl group or alkenyl group. In this case, since the vapor pressure of the precursor for thin film formation containing the ligand is improved, effects such as process ease during the thin film formation process using the precursor can be obtained.

[0043] In addition to the vapor pressure improvement effect, since each of the ligands in which R1 and R3 are each composed of a linear alkyl group has a high structural degree of freedom of the ligand, an effect of improving the degree of freedom of the precursor to which the ligand is applied can be obtained. Due to such an effect, an effect of minimizing the interaction between precursors to create a liquefied and low-viscosity characteristic of the precursor is exhibited.

[0044] Therefore, in an amidinate ligand according to an embodiment of the present invention, in Chemical Formula 1, R1 and R3 can be composed of a linear alkyl group or alkenyl group. In this case, the vapor pressure of the precursor containing the ligand can be improved, and not only is it easy to form in a liquid state or a solid state having a low melting point through an improvement in the degree of freedom, but also a low-viscosity characteristic can be obtained together.

[0045] Further, each of R1 and R3 is independently a linear C1-C5 alkyl group or alkenyl group, and R2 may be a linear C1-C4 alkyl group or alkenyl group.

[0046] Further, both R1 and R3 may be the same and may be a linear, branched or cyclic C1-C5 alkyl group or alkenyl group.

[0047] Further, R1 to R3 may all be the same and may be a linear, branched or cyclic C1-C4 alkyl group or alkenyl group.

[0048] Exemplary structures of the precursor for thin film formation represented by such Chemical Formula 1 are as follows.

Chemical Formula

[0049] In addition, the cyclopentadienyl ligand can have a substituted structure, and by adjusting the molecular size thereby, the viscosity and volatility of the precursor compound can be adjusted.

[0050] Here, the precursor for forming the yttrium- or scandium-containing thin film preferably has a viscosity of 60 cP or less. Further, the melting point of the precursor for forming the thin film is preferably 70°C or less.

[0051] Due to the chemical structure of the precursor for forming the thin film of the present invention as described above, a liquid precursor with low viscosity, high heat resistance, and high volatility can be obtained, and thereby a high-quality thin film can be formed.

[0052] In addition, the precursor for forming the thin film of the present invention can further contain a solvent for dissolving or diluting the precursor compound in consideration of the conditions and efficiency of the thin film forming process. Examples of the solvent include any one of saturated or unsaturated hydrocarbons, ketones, ethers, glymes, esters, tetrahydrofuran, and tertiary amines having C1-C 16 or a mixture thereof. Examples of the saturated or unsaturated hydrocarbons having C1-C 16 include pentane, cyclohexane, ethylcyclohexane, heptane, octane, toluene, etc., and examples of the tertiary amine include dimethylethylamine and triethylamine.

[0053] In particular, depending on the chemical structure, the compound of the precursor for thin film formation may be in a solid state at room temperature. In this case, by including the solvent, the compound can be dissolved. That is, when the solvent is included, it is preferably contained in a solvent and content that can dissolve the precursor compound, and is contained in an amount of 1 to 99% by weight based on the total weight of the precursor for thin film formation.

[0054] Whether the precursor contains the solvent or not, it can be vaporized, so it can be supplied into the chamber in the form of a precursor gas. Therefore, when the precursor compound for thin film formation exists in a liquid state at normal temperature and can be easily vaporized depending on the type, the thin film formation process can be carried out without a separate solvent.

[0055] In this case, the yttrium- or scandium-containing thin film formation process can be carried out by any one of a spin-on dielectric (SOD) process, a low temperature plasma (LTP) process, a chemical vapor deposition (CVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, a high density plasma-chemical vapor deposition (HDPCVD) process, an atomic layer deposition (ALD) process, or a plasma-enhanced atomic layer deposition (PEALD) process.

[0056] For example, when applying the HDP-CVD process, it can be carried out at high vacuum and high power compared to an atmospheric pressure chemical vapor deposition (AP-CVD) process, a low pressure chemical vapor deposition (LP-CVD) process, or a plasma enhanced chemical vapor deposition (PE-CVD) process. Therefore, a thin film with a structurally dense and excellent mechanical property can be formed.

[0057] For this purpose, the thin film forming method according to the present invention includes a step of forming a thin film on a substrate using the thin film forming precursor.

[0058] Specifically, the step of forming a thin film containing yttrium or scandium on the substrate may include a step of depositing the thin film forming precursor on the surface of the substrate to form a precursor thin film, and a step of reacting the precursor thin film with a reactive gas.

[0059] Further, it may include a step of vaporizing the thin film forming precursor for deposition of the precursor and transferring it into the chamber.

[0060] Also, the step of forming a thin film containing yttrium or scandium on the substrate may include a step of supplying the thin film forming precursor to the substrate and applying plasma in the presence of a reactive gas to form a thin film such as a metal, oxide, nitride, oxynitride, etc.

[0061] The step of forming the thin film can be carried out under a pressure condition in the chamber of 0.1 to 10 Torr. Also, the source power for forming plasma in the chamber is preferably 500 to 9,000 W, and the bias power is preferably 0 to 5,000 W. Also, the bias power may not be applied depending on the case.

[0062] Also, the step of forming a thin film on the substrate is preferably carried out in a temperature range of 150 to 500°C.

[0063] Also, when supplying the precursor for thin film formation, in order to further improve the electrical properties of the finally formed metal film, that is, the capacitance or leakage current value, a second metal precursor can be selectively introduced as needed. The second metal precursor can be a metal precursor containing one or more metals (M) selected from magnesium (Mg), strontium (Sr), barium (Ba), lanthanum group (Ln), titanium (Ti), zirconium (Zr), hafnium (Hf), niobium (Nb), tantalum (Ta), aluminum (Al), indium (In), silicon (Si), germanium (Ge), tin (Sn) atoms. The second metal precursor can be an alkylamide compound or an alkoxy compound containing the metal. As an example, when the metal is Si, SiH(N(CH3)2)3, SiH2(N(C2H5)2)2, SiH2(NH t Bu)2, SiH3(N( i Pr)2), Si(OC4H9)4, Si(OC2H5)4, Si(OCH3)4, Si(OC(CH3)3)4, etc. can be used.

[0064] The supply of the second metal precursor can be carried out in the same manner as the supply method of the precursor for thin film formation. The second metal precursor may be supplied onto the thin film formation substrate together with the precursor, or may be sequentially supplied after the supply of the precursor is completed.

[0065] The precursor for thin film formation and selectively the second metal precursor as described above are preferably maintained at a temperature of 50 to 250 °C, more preferably 100 to 200 °C, until they are supplied into the reaction chamber to contact the thin film formation substrate.

[0066] Also, prior to the supply of the reactive gas after the supply step of the precursor, to assist the movement of the precursor and optionally the second metal precursor onto the substrate, or to make the pressure inside the reactor appropriate for vapor deposition, and to discharge impurities present in the chamber to the outside, a step of purging the reactor with an inert gas such as argon (Ar), nitrogen (N2), or helium (He) can be performed. At this time, the purging of the inert gas is preferably performed so that the pressure inside the reactor becomes 1 to 5 Torr.

[0067] Also, as the reactive gas, any one or a mixture of water vapor (H2O), oxygen (O2), ozone (O3), hydrogen peroxide (H2O2), hydrogen (H2), ammonia (NH3), nitric oxide (NO), nitrous oxide (N2O), nitrogen dioxide (NO2), hydrazine (N2H4), and silane (SiH4) can be used. When performed in the presence of oxidizing gases such as water vapor, oxygen, and ozone, a metal oxide thin film can be formed. When performed in the presence of reducing gases such as hydrogen, ammonia, hydrazine, and silane, a thin film of a metal or a metal nitride can be formed. Also, a metal oxynitride thin film can be formed by mixing reactive gases.

[0068] Also, in addition to plasma treatment, a treatment step by heat treatment or light irradiation can be performed, but it is for providing thermal energy for the vapor deposition of the precursor for thin film formation and can be performed by a normal method. Preferably, in order to produce a thin film having a desired physical state and composition at a sufficient growth rate, the treatment step is preferably performed so that the temperature of the substrate inside the reactor becomes 100 to 1,000 °C, preferably 250 to 600 °C.

[0069] Also, during the above-described processing steps, as described above, to assist the movement of the reactive gas onto the substrate, or to make the pressure inside the reactor appropriate for vapor deposition, and to release impurities or by-products present inside the reactor to the outside, a step of purging an inert gas such as argon (Ar), nitrogen (N2), or helium (He) into the reactor can be performed.

[0070] By repeating the above-described process steps of introducing the precursor for thin film formation, introducing the inert gas, introducing the reactive gas, and introducing the inert gas one cycle at least once as one cycle, a thin film can be formed.

[0071] Also, when the above-described thin film forming step is applied, various semiconductor elements including the thin film can be manufactured.

[0072] Hereinafter, the effects of the present invention will be described by way of examples.

[0073] [Synthesis Example 1] Synthesis of Bis(ethylcyclopentadienyl)yttrium Chloride [(EtCp)2YCl] To a solution of 300 ml of THF and 48.22 g (0.512 mol) of ethylcyclopentadiene, 204.9 ml (0.512 mol) of an n-BuLi hexane solution (2.5 M) was slowly added dropwise at -78°C. After stirring for 30 minutes, the temperature was raised to room temperature and stirring was continued for 2 hours to produce a Li-EtCp solution. After adding 50.0 g (0.256 mol) of yttrium chloride and 150 ml of toluene to a new flask, the mixture was cooled to -78°C while stirring. The previously produced Li-EtCp solution was slowly added dropwise to the flask containing the yttrium chloride mixture. After stirring at -78°C for 30 minutes, the temperature was raised to room temperature and stirring was continued for 12 hours to synthesize bis(ethylcyclopentadienyl)yttrium chloride.

[0074] [Synthesis Example 2] Synthesis of Bis(ethylcyclopentadienyl)(diethyl-ethylamidinato)yttrium [(EtCp)2Y(Et2Et-AMD)] 300 ml of THF was charged with 32.83 g (0.256 mol) of diethyl-ethylamidinates, cooled to -78 °C, and then 102.4 ml (0.256 mol) of an n-BuLi hexane solution (2.5 M) was slowly added dropwise to produce Li-(Et2Et-AMD). The solution was stirred at -78 °C for 30 minutes, then warmed to room temperature and further stirred at room temperature for 2 hours. The produced Li-(Et2Et-AMD) solution was slowly added dropwise to a flask containing (EtCp)2YCl at room temperature and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, dissolved in 250 ml of pentane, filtered, and the solvent and volatile substances were evaporated under vacuum. The resulting red liquid was distilled at 165 °C and 40 mTorr to obtain a pale yellow liquid. The yield was 60.1 g (58.3%). The NMR (AV400 MHz HD manufactured by Bruker) analysis results are shown in Figure 1. 1 H NMR (C6D6, 25 °C): 0.85 (t, 3H), 0.98 (t, 6H), 1.20 (t, 6H), 1.97 (q, 2H), 2.48 (q, 4H), 2.97 (q, 4H), 6.0 (dt, 8H)

[0075] During the TGA (SDT Q600 manufactured by TA Instruments) analysis of the pale yellow liquid measured at a heating rate of 10 °C / min in an atmosphere where nitrogen was flowing at 200 ml / min, it was 0%, leaving almost no residual mass. Such results are shown in Figure 2, which is the TGA analysis result showing the percentage of weight loss due to temperature change.

[0076] After placing a pale yellow liquid sample in a sealed container for DSC and maintaining it at 40 °C for 10 minutes, a decomposition peak was observed at 431 °C during the DSC (Discovery25 manufactured by TA Instruments) analysis measured at a temperature increase rate of 10 °C / min. Such results are shown in Figure 3, which is the DSC analysis result showing the change in thermal energy due to temperature change.

[0077] [Synthesis Example 3] Synthesis of bis(ethylcyclopentadienyl)(diethyl-n-propylamidinato)yttrium [(EtCp)2Y(Et2nPr-AMD)] 300 ml of THF was charged with 36.43 g (0.256 mol) of diethyl-n-propylamidinato, cooled to -78 °C, and then 102.4 ml (0.256 mol) of an n-BuLi hexane solution (2.5 M) was slowly added dropwise to produce Li-(Et2nPr-AMD). The solution was stirred at -78 °C for 30 minutes, then warmed to room temperature and further stirred at room temperature for 2 hours. The produced Li-(Et2nPr2-AMD) solution was slowly added dropwise to a flask containing Y(EtCp)2Cl at room temperature and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, dissolved in 250 ml of pentane, filtered, and the solvent and volatile substances were evaporated under vacuum. The resulting red liquid was distilled at 185 °C and 40 mTorr to obtain a pale yellow liquid. The yield was 65.1 g (61.0%). The NMR (AV400 MHz HD manufactured by Bruker) analysis results are shown in Figure 4. 1 1H NMR (C6D6, 25 °C): 0.83 (t, 3H), 0.99 (t, 6H), 1.20 (t, 6H), 1.36 (q, 2H), 1.98 (q, 2H), 2.50 (q, 4H), 3.00 (q, 4H), 6.0 (dt, 8H)

[0078] The pale yellow liquid was 0% during TGA (SDT Q600 manufactured by TA Instruments) analysis measured at a heating rate of 10 °C / min in an atmosphere where nitrogen was flowing at 200 ml / min, leaving almost no residual mass. Such results are shown in Figure 5, which is the TGA analysis result showing the percentage of weight loss due to temperature change.

[0079] [Synthesis Example 4] Synthesis of Bis(ethylcyclopentadienyl)(di-n-propyl-ethylamidinato)yttrium [(EtCp)2Y(nPr2Et-AMD)] 40.02 g (0.256 mol) of diethyl-n-propylamidinato was added to 300 ml of THF, and after cooling to -78 °C, 102.4 ml (0.256 mol) of an n-BuLi xane solution (2.5 M) was slowly added dropwise to produce Li-(nPr2Et-AMD). The solution was stirred at -78 °C for 30 minutes, then warmed to room temperature and further stirred at room temperature for 2 hours. The produced Li-(nPr2Et-AMD) solution was slowly added dropwise to a flask containing Y(EtCp)2Cl at room temperature and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, dissolved in 250 ml of pentane, filtered, and the solvent and volatile substances were evaporated under vacuum. The resulting red liquid was distilled at 185 °C and 40 mTorr to obtain a yellow liquid. The yield was 63.7 g (57.8%). The NMR (AV400 MHz HD manufactured by Bruker) analysis results are shown in Figure 6. 1 H NMR (C6D6, 25 °C): 0.90 (m, 9H), 1.21 (t, 6H), 1.40 (q, 4H), 1.98 (q, 2H), 2.50 (q, 4H), 3.00 (q, 4H), 6.1 (dt, 8H)

[0080] The pale yellow liquid was 0% during TGA (SDT Q600 manufactured by TA Instruments) analysis measured at a heating rate of 10 °C / min in an atmosphere where nitrogen was flowing at 200 ml / min, leaving almost no residual mass. Such results are shown in Figure 7, which is the TGA analysis result showing the percentage of weight loss due to temperature change.

[0081] [Synthesis Example 5] Synthesis of Bis(isopropylcyclopentadienyl)yttrium Chloride [(iPrCp)2YCl] To a solution of 300 ml of THF and 55.40 g (0.512 mol) of isopropylcyclopentadiene, 204.9 ml (0.512 mol) of an n-BuLi hexane solution (2.5 M) was slowly added dropwise at -78 °C. After stirring for 30 minutes, the temperature was raised to room temperature and stirring was continued for 2 hours to produce a Li-EtCp solution. 50.0 g (0.256 mol) of yttrium chloride and 150 ml of toluene were charged into a new flask and then cooled to -78 °C while stirring. The previously produced Li-EtCp solution was slowly added dropwise to the flask containing the yttrium chloride mixture. After stirring at -78 °C for 30 minutes, the temperature was raised to room temperature and stirring was continued for 12 hours to synthesize bis(isopropylcyclopentadienyl)yttrium chloride.

[0082] [Synthesis Example 6] Synthesis of bis(isopropylcyclopentadienyl)(diethyl-ethylamidinato)yttrium [(iPrCp)2Y(Et2Et-AMD)] 32.83 g (0.256 mol) of diethyl-ethylamidinato was charged into 300 ml of THF and cooled to -78 °C. Then, 102.4 ml (0.256 mol) of an n-BuLi hexane solution (2.5 M) was slowly added dropwise to produce Li-(Et2Et-AMD). After stirring the solution at -78 °C for 30 minutes, it was warmed to room temperature and further stirred at room temperature for 2 hours. The produced Li-(Et2Et-AMD) solution was slowly added dropwise to a flask containing (iPrCp)2YCl at room temperature and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, dissolved in 250 ml of pentane, filtered, and the solvent and volatile substances were evaporated under vacuum. The resulting red liquid was distilled at 170 °C and 20 mTorr to obtain a yellow liquid. The yield was 63.6 g (70.1%). The NMR (AV400 MHz HD manufactured by Bruker) analysis results are shown in Figure 8. 1 H NMR (C6D6, 25 °C): 0.85 (t, 3H), 1.02 (t, 6H), 1.24 (d, 12H), 1.94 (q, 2H), 2.82 (m, 2H), 3.01 (q, 4H), 6.01 (dt, 8H)

[0083] The pale yellow liquid was 0% during TGA (SDT Q600 manufactured by TA Instruments) analysis measured at a heating rate of 10 °C / min in an atmosphere where nitrogen was flowing at 200 ml / min, leaving almost no residual mass.

[0084] [Synthesis Example 7] Synthesis of Bis(cyclopentadienyl)yttrium chloride [(Cp)2YCl] To a solution of 300 ml of THF and 33.85 g (0.512 mol) of cyclopentadiene, 204.9 ml (0.512 mol) of an n-BuLi hexane solution (2.5 M) was slowly added dropwise at -78 °C. After stirring for 30 minutes, the temperature was raised to room temperature and stirring was continued for 2 hours to produce a Li-Cp solution. 50.0 g (0.256 mol) of yttrium chloride and 150 ml of toluene were charged into a new flask and then cooled to -78 °C while stirring. The previously produced Li-Cp solution was slowly added dropwise to the flask containing the yttrium chloride mixture, stirred at -78 °C for 30 minutes, then the temperature was raised to room temperature and stirred for 12 hours to synthesize bis(cyclopentadienyl)yttrium chloride.

[0085] [Synthesis Example 8] Synthesis of Bis(cyclopentadienyl)(diethyl-ethylamidinato)yttrium [(Cp)2Y(Et2Et-AMD)] 32.83 g (0.256 mol) of diethyl-ethylamidinato was charged into 300 ml of THF, cooled to -78 °C, and then 102.4 ml (0.256 mol) of an n-BuLi hexane solution (2.5 M) was slowly added dropwise to produce Li-(Et2Et-AMD). The solution was stirred at -78 °C for 30 minutes, then warmed to room temperature and further stirred at room temperature for 2 hours. The produced Li-(Et2Et-AMD) solution was slowly added dropwise to the flask containing (Cp)2YCl at room temperature and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, dissolved in 250 ml of pentane, filtered, and the solvent and volatiles were evaporated under vacuum. The resulting red liquid was distilled at 166 °C and 33 mTorr to obtain a yellow solid. The yield was 51.2 g (48.5%). The NMR (AV400MHz HD manufactured by Bruker) analysis results are shown in Figure 9. 1 1H NMR (C6D6, 25 °C): 0.81 (t, 3H), 0.96 (t, 6H), 1.90 (q, 2H), 2.96 (q, 4H), 6.16 (s, 8H)

[0086] The yellow solid was 1.5% during TGA (SDT Q600 manufactured by TA Instruments) analysis measured at a temperature increase rate of 10 °C / min in an atmosphere where nitrogen was flowing at 200 ml / min, leaving almost no residual mass. Such results are shown in FIG. 10 which is the TGA analysis result indicating the percentage of weight loss due to temperature change.

[0087] After placing the yellow solid sample in a sealed container for DSC and maintaining it at 40 °C for 10 minutes, a decomposition peak was observed at 402 °C during DSC (Discovery25 manufactured by TA Instruments) analysis measured at a temperature increase rate of 10 °C / min.

[0088] [Synthesis Example 9] Synthesis of Bis(cyclopentadienyl)(diethyl - n - propylamidinato)yttrium [(Cp)2Y(Et2nPr - AMD)]

[0089] 36.433 g (0.256 mol) of diethyl - n - propylamidinato was added to 300 ml of THF, and after cooling to -78 °C, 102.4 ml (0.256 mol) of an n - BuLi hexane solution (2.5 M) was slowly added dropwise to produce Li-(Et2nPr - AMD). After stirring the solution at -78 °C for 30 minutes, it was warmed to room temperature and further stirred at room temperature for 2 hours. The produced Li-(Et2nPr - AMD) solution was slowly added dropwise to a flask containing (Cp)2YCl at room temperature and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, dissolved in 250 ml of pentane, filtered, and the solvent and volatile substances were evaporated under vacuum. The resulting red liquid was distilled at 160 °C and 28 mTorr to obtain a red solid. The yield was 49.6 g (53.8%). The NMR (AV400MHz HD manufactured by Bruker) analysis results are shown in FIG. 11. 11H NMR (C6D6, 25 °C): 0.82 (t, 3H), 0.97 (t, 6H), 1.28 (t, 6H), 1.93 (q, 2H), 2.99 (q, 4H), 6.0 (s, 8H)

[0090] The red solid was 1.9% during TGA analysis (SDT Q600 manufactured by TA Instruments) measured at a heating rate of 10 °C / min in an atmosphere where nitrogen was flowing at 200 ml / min, leaving almost no residual mass. Such results are shown in Figure 12, which is the TGA analysis result showing the percentage of weight loss due to temperature change.

[0091] [Synthesis Example 10] Synthesis of bis(cyclopentadienyl)(di-n-propyl-ethylamidinato)yttrium [(Cp)2Y(nPr2Et-AMD)] 32.83 g (0.256 mol) of di-n-propyl-ethylamidinato was added to 300 ml of THF, and after cooling to -78 °C, 102.4 ml (0.256 mol) of an n-BuLi hexane solution (2.5 M) was slowly added dropwise to produce Li-(nPr2Et-AMD). After stirring the solution at -78 °C for 30 minutes, it was warmed to room temperature and further stirred at room temperature for 2 hours. The produced Li-(nPr2Et-AMD) solution was slowly added dropwise to a flask containing (Cp)2YCl at room temperature and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, dissolved in 250 ml of pentane, filtered, and the solvent and volatile substances were evaporated under vacuum. The resulting red liquid was distilled at 165 °C and 36 mTorr to obtain a yellow solid. The yield was 55.8 g (55.8%). The NMR (AV400MHz HD manufactured by Bruker) analysis results are shown in Figure 13. 1 1H NMR (C6D6, 25 °C): 0.84 (t, 3H), 0.89 (t, 6H), 1.44 (t, 4H), 1.91 (q, 2H), 3.03 (q, 4H), 6.16 (s, 8H)

[0092] The yellow solid was 2.3% during TGA (SDT Q600 manufactured by TA Instruments) analysis measured at a temperature increase rate of 10 °C / min in an atmosphere where nitrogen was flowing at 200 ml / min, leaving almost no residual mass. Such results are shown in Figure 14, which is the TGA analysis result indicating the percentage of weight loss due to temperature change.

[0093] After placing the yellow solid sample in a sealed container for DSC and maintaining it at 40 °C for 10 minutes, a decomposition peak was observed at 410 °C during DSC (Discovery25 manufactured by TA Instruments) analysis measured at a temperature increase rate of 10 °C / min.

[0094] [Synthesis Example 11] Synthesis of Bis(methylcyclopentadienyl)yttrium Chloride [(MeCp)2YCl] To a solution of 300 ml of THF and 41.04 g (0.512 mol) of methylcyclopentadiene, 204.9 ml (0.512 mol) of an n-BuLi hexane solution (2.5 M) was slowly added dropwise at -78 °C. After stirring for 30 minutes, the temperature was raised to room temperature and stirring was continued for another 2 hours to produce a Li-MeCp solution. 50.0 g (0.256 mol) of yttrium chloride and 150 ml of toluene were charged into a new flask and then cooled to -78 °C while stirring. The previously produced Li-MeCp solution was slowly added dropwise to the flask containing the yttrium chloride mixture. After stirring at -78 °C for 30 minutes, the temperature was raised to room temperature and stirring was continued for 12 hours to synthesize bis(methylcyclopentadienyl)yttrium chloride.

[0095] [Synthesis Example 12] Synthesis of Bis(methylcyclopentadienyl)(diethyl-ethylamidinato)yttrium [(MeCp)2Y(Et2Et-AMD)] 300 ml of THF was charged with 32.83 g (0.256 mol) of diethyl-ethylamidinato, cooled to -78 °C, and then 102.4 ml (0.256 mol) of an n-BuLi hexane solution (2.5 M) was slowly added dropwise to produce Li-(Et2Et-AMD). The solution was stirred at -78 °C for 30 minutes, then warmed to room temperature and further stirred at room temperature for 2 hours. The produced Li-(Et2Et-AMD) solution was slowly added dropwise to a flask containing (MeCp)2YCl at room temperature and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, dissolved in 250 ml of pentane, filtered, and the solvent and volatile substances were evaporated under vacuum. The resulting red liquid was distilled at 157 °C and 62 mTorr to obtain a colorless solid. The yield was 60.1 g (58.3%). The NMR (AV400 MHz HD manufactured by Bruker) analysis results are shown in Figure 15. 1 1H NMR (C6D6, 25 °C): 0.85 (t, 3H), 0.97 (t, 6H), 1.95 (q, 2H), 2.10 (s, 6H), 2.97 (q, 4H), 6.0 (dt, 8H)

[0096] The yellow liquid was 1.1% during TGA (SDT Q600 manufactured by TA Instruments) analysis measured at a temperature increase rate of 10 °C / min in an atmosphere where nitrogen was flowing at 200 ml / min, leaving almost no residual mass. Such results are shown in Figure 16, which is the TGA analysis result showing the percentage of weight loss due to temperature change.

[0097] The yellow solid sample was placed in a sealed container for DSC, maintained at 40 °C for 10 minutes, and a decomposition peak was observed at 400 °C during DSC (Discovery25 manufactured by TA Instruments) analysis measured at a temperature increase rate of 10 °C / min.

[0098] [Synthesis Example 13] Synthesis of Bis(methylcyclopentadienyl)(diethyl-n-propylamidinato)yttrium [(MeCp)2Y(Et2nPr-AMD)] 300 ml of THF was charged with 36.43 g (0.256 mol) of diethyl-n-propylamidinato, cooled to -78 °C, and then 102.4 ml (0.256 mol) of an n-BuLi hexane solution (2.5 M) was slowly added dropwise to produce Li-(Et2nPr-AMD). The solution was stirred at -78 °C for 30 minutes, then warmed to room temperature and further stirred at room temperature for 2 hours. The produced Li-(Et2nPr2-AMD) solution was slowly added dropwise to a flask containing (MeCp)2YCl at room temperature and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, dissolved in 250 ml of pentane, filtered, and the solvent and volatiles were evaporated under vacuum. The resulting red liquid was distilled at 170 °C and 67 mTorr to obtain a colorless liquid. The yield was 59.11 g (59.4%). The NMR (AV400 MHz HD manufactured by Bruker) analysis results are shown in Figure 17. 1 1H NMR (C6D6, 25 °C): 0.83 (t, 3H), 0.98 (t, 6H), 1.34 (t, 2H), 1.96 (q, 2H), 2.11 (s, 6H), 2.97 (q, 4H), 6.0 (dt, 8H)

[0099] The colorless liquid was 0.9% during TGA (SDT Q600 manufactured by TA Instruments) analysis measured at a heating rate of 10 °C / min in an atmosphere where nitrogen was flowing at 200 ml / min, leaving almost no residual mass. Such results are shown in Figure 18, which is the TGA analysis result showing the percentage of weight loss due to temperature change.

[0100] After placing a colorless liquid sample in a sealed container for DSC and maintaining it at 40 °C for 10 minutes, a decomposition peak was observed at 410 °C during DSC (Discovery25 manufactured by TA Instruments) analysis measured at a temperature increase rate of 10 °C / min.

[0101] [Synthesis Example 14] Synthesis of Bis(methylcyclopentadienyl)(di-n-propyl-ethylamidinato)yttrium [(MeCp)2Y(nPr2Et-AMD)] 40.02 g (0.256 mol) of di-n-propyl-ethylamidinato was added to 300 ml of THF, and after cooling to -78 °C, 102.4 ml (0.256 mol) of an n-BuLi hexane solution (2.5 M) was slowly added dropwise to produce Li-(nPr2Et-AMD). The solution was stirred at -78 °C for 30 minutes, then warmed to room temperature and further stirred at room temperature for 2 hours. The produced Li-(nPr2Et-AMD) solution was slowly added dropwise to a flask containing (MeCp)2YCl at room temperature, and stirred at room temperature for 12 hours. The mixture was evaporated under vacuum, dissolved in 250 ml of pentane, filtered, and the solvent and volatile substances were evaporated under vacuum. The resulting red liquid was distilled at 155 °C and 113 mTorr to obtain a yellow liquid. The yield was 60.1 g (58.3%). The NMR (AV400 MHz HD manufactured by Bruker) analysis results are shown in Figure 19. 1 1H NMR (C6D6, 25 °C): 0.87 (t, 9H), 1.37 (q, 4H), 2.01 (q, 2H), 2.12 (s, 6H), 2.96 (q, 4H), 6.0 (dt, 8H)

[0102] The yellow liquid was 1.6% during TGA (SDT Q600 manufactured by TA Instruments) analysis measured at a temperature increase rate of 10 °C / min in an atmosphere where nitrogen was flowing at 200 ml / min, leaving almost no residual mass. Such results are shown in Figure 20, which is the TGA analysis result showing the percentage of weight loss due to temperature change.

[0103] [Synthesis Example 15] Synthesis of Bis(ethylcyclopentadienyl)scandium Chloride [(EtCp)2ScCl] To a solution of 300 ml of THF and 66.09 g (0.661 mol) of ethylcyclopentadiene, 264.4 ml (0.661 mol) of an n-BuLi hexane solution (2.5 M) was slowly added dropwise at -78 °C. After stirring for 30 minutes, the temperature was raised to room temperature and stirring was continued for 2 hours to produce a Li-EtCp solution. 50.0 g (0.330 mol) of scandium chloride and 150 ml of toluene were added to a new flask, and then cooled to -78 °C while stirring. The previously produced Li-EtCp solution was slowly added dropwise to the flask containing the scandium chloride mixture, stirred at -78 °C for 30 minutes, then the temperature was raised to room temperature and stirred for 12 hours to synthesize bis(ethylcyclopentadienyl)scandium chloride.

[0104] [Synthesis Example 16] Synthesis of bis(ethylcyclopentadienyl)(diethyl-n-propylamidinato)scandium [(EtCp)2Sc(Et2nPr-AMD)] 47.01 g (0.330 mol) of diethyl-n-propylamidinato was added to 300 ml of THF, cooled to -78 °C, and then 132.2 ml (0.330 mol) of an n-BuLi hexane solution (2.5 M) was slowly added dropwise to produce Li-(Et2nPr-AMD). The solution was stirred at -78 °C for 30 minutes, then warmed to room temperature and stirred for an additional 2 hours at room temperature. The produced Li-(Et2nPr-AMD) solution was slowly added dropwise to the flask containing (EtCp)2ScCl at room temperature and stirred for 12 hours at room temperature. The mixture was evaporated under vacuum, dissolved in 250 ml of pentane, filtered, and the solvent and volatiles were evaporated under vacuum. The resulting red liquid was distilled at 150 °C and 28.4 mTorr to obtain a colorless liquid. The yield was 73.33 g (59.6%). 1 H NMR (C6D6, 25 °C): 0.22 (t, 3H), 1.00 (t, 6H), 1.19 (t, 6H), 1.33 (q, 2H), 1.92 (q, 2H), 2.38 (q, 4H), 3.03 (q, 4H), 6.0 (dt, 8H)

[0105] The pale yellow liquid sample left a residual mass of 1.2% during the TGA analysis measured at a temperature increase rate of 10 °C / min in an atmosphere with nitrogen flowing at 200 ml / min. Such results are shown in Fig. 21, which is the TGA analysis result indicating the percentage of weight loss due to temperature change.

[0106] Among the precursors according to Synthesis Examples 1 to 16, the measured TGA analysis results are shown in Table 1.

Table 1

[0107] Among the precursors according to Synthesis Examples 1 to 16, the measured DSC analysis results are shown in Table 2.

Table 2

[0108] To confirm the viscosities of the precursors of Synthesis Example 2 and Synthesis Example 3, the sample was placed in the measuring container of a rotational viscometer (LVD2T manufactured by Brookfield), and the viscosity was measured with a spindle for low viscosity under the condition of 25 °C, and the results are shown in Table 3.

Table 3

[0109] The following thin film forming process was carried out using the precursor.

[0110] Using the precursor of Synthesis Example 3 and O3 as an oxidant, film formation evaluation by an atomic layer deposition process was carried out in a bubbler method. The film formation evaluation was based on the change in the thin film thickness with the process cycle (Number of cycles vs. Thickness).

[0111] After heating the precursor of Synthesis Example 3 to the vaporization temperature, argon (Ar) gas was injected through a Dip line to generate bubbles, and thus the vapor of the precursor compound in the gaseous state was supplied into the reaction chamber through a carrier gas.

[0112] An SiO2 substrate and a TiN substrate were provided in the reaction chamber, and in order to confirm the change in the thin film thickness by the process cycle while maintaining the set temperature (180 - 320 °C), vapor deposition evaluation was carried out under the conditions of precursor (5 - 15 s) - purge (60 s) - oxidant (5 - 15 s) - purge (30 s).

[0113] The purge process was carried out at a flow rate of 700 sccm of argon (Ar) gas, and ozone (O3), which is the reaction gas, was injected at a concentration of 220 g / m 3 The precursor was heated to 80 °C and flowed at an argon carrier gas injection rate of 200 sccm, and the number of process cycles was set to 50, 100, and 150 cycles. The results of the change in the thin film thickness according to the number of vapor deposition cycles for each process temperature (180 °C, 220 °C, 260 °C, 275 °C, 320 °C) are shown in Figure 22.

[0114] Looking at the results in Figure 22, a constant change in the thin film thickness according to the number of vapor deposition cycles was confirmed for all the evaluated SiO2 and TiN specimens under all process temperature conditions.

[0115] The vapor deposition rate for each temperature is as shown in Table 4.

Table 4

[0116] Also, in order to measure the change in the thin film vapor deposition rate due to the process temperature (ALD window), after raising the temperature of the precursor according to Synthesis Example 3 to the vaporization temperature, argon (Ar) gas was injected through the Dip line to generate bubbles, and thus the vapor of the precursor compound in the gaseous state was supplied into the reaction chamber through the carrier gas.

[0117] SiO2 and TiN substrates were placed in the reaction chamber, and in order to confirm the change in the thin film vapor deposition rate due to the process temperature while changing the temperature, the precursor (10 s) - purge (60 s) - oxidant (10 s) - purge (30 s) were supplied in this order. The purge process was carried out at a flow rate of 700 sccm of argon (Ar) gas. Ozone (O3), which is the reaction gas, was at 220 g / m3 It was injected at the concentration of

[0118] Looking at the results in Fig. 23, it can be seen that similar thin film deposition rates (nm / cycle) are shown at process temperatures (180 °C, 220 °C, 260 °C, 275 °C, 320 °C), indicating that there is a process temperature range (ALD window).

[0119] Also, in order to confirm the thin film crystallinity for each process temperature, XRD analysis was performed on the Y2O3 thin films obtained for each process temperature through the above process evaluation using SiO2 and TiN specimens to confirm the crystallinity of the thin films. The crystallinity was measured after the deposition process, and analysis was also performed on the specimens after heat treatment at 600 °C for 30 seconds under N2 conditions using RTA. As a result of the analysis, cubic Y2O3 crystallinity was confirmed in the thin films deposited under conditions of 300 °C or higher in the as-deposited thin films. It was confirmed that cubic Y2O3 crystallinity was generated under all temperature conditions after the heat treatment. The analyzed XRD results are shown in Fig. 24.

[0120] Also, in order to confirm the composition and impurities of the thin film, XPS depth profile analysis was performed. The composition and impurity content of the thin film were confirmed by XPS analysis on the Y2O3 thin film deposited on SiO2 and TiN specimens at 275 °C. It was confirmed that both C and N impurities in the thin film were 0%, and the O / Y content ratio had a composition ratio of 1.22. The analyzed XPS depth profile results are shown in Fig. 25.

[0121] The present invention has been described by way of preferred embodiments as described above, but is not limited to the above embodiments, and various modifications and changes can be made by those with ordinary knowledge in the technical field to which the present invention pertains without departing from the spirit of the present invention. Those modified examples and changed examples should also be regarded as belonging to the scope of the present invention and the appended claims.

Claims

1. A precursor for forming a yttrium- or scandium-containing thin film, characterized by containing a yttrium- or scandium-containing compound represented by the following Chemical Formula 1. 【Chemical Formula 1】 (In the formula, M is yttrium (Y) or scandium (Sc) metal, and R １ and R ３ are each independently a linear, branched or cyclic alkyl or alkenyl group of C １ -C ５ , R ２ is a hydrogen atom or a linear, branched or cyclic alkyl or alkenyl group of C １ -C ４ , R' may be the same as or different from each other, and is a hydrogen atom or a linear, branched or cyclic alkyl or alkenyl group of C １ -C ４ , and n is an integer of 1 to 5.)

2. The R in the chemical formula 1 ２ is a straight-chain, branched-chain or cyclic alkyl group or alkenyl group of C ２ -C ４ The precursor for forming a yttrium- or scandium-containing thin film according to claim 1, characterized in that it is a straight-chain, branched-chain or cyclic alkyl group or alkenyl group of C

3. In the formula (1), the R １ and R ３ are each independently a linear, branched or cyclic alkyl group or alkenyl group of C ２ -C ５ , and the R ２ is a linear, branched or cyclic alkyl group or alkenyl group of C ２ -C ４ . The precursor for forming a yttrium- or scandium-containing thin film according to claim 1, characterized in that it is as described above.

4. The R in the chemical formula 1 １ and R ３ are methyl groups, and the precursor for forming a yttrium- or scandium-containing thin film according to claim 1, characterized in that.

5. The R in the chemical formula 1 ２ is an isopropyl group, and the precursor for forming a yttrium- or scandium-containing thin film according to claim 1, characterized in that it is an isopropyl group.

6. The R in the chemical formula 1 １ and R ３ are each independently a linear alkyl group or alkenyl group of C １ -C ５ The precursor for forming a yttrium- or scandium-containing thin film according to claim 1, characterized in that it is such.

7. In the chemical formula 1, the R １ and R ３ are each independently a linear alkyl group or alkenyl group of C １ -C ５ , and the R ２ is a linear alkyl group or alkenyl group of C １ -C ４ . The precursor for forming a yttrium- or scandium-containing thin film according to claim 1, characterized in that it is as described above.

8. The R in the chemical formula 1 １ and R ３ are both the same and are a linear, branched or cyclic alkyl group or alkenyl group of C １ -C ５ The precursor for forming a yttrium- or scandium-containing thin film according to claim 1, characterized in that it is such.

9. The R in the chemical formula 1 １ ~R ３ are all the same and are a linear, branched or cyclic alkyl group or alkenyl group of C １ -C ４ The precursor for forming a yttrium- or scandium-containing thin film according to claim 1, characterized in that it is such.

10. The precursor for forming a yttrium- or scandium-containing thin film according to Claim 1, characterized in that the viscosity is 60 cP or less.

11. The precursor for forming a yttrium- or scandium-containing thin film according to Claim 1, characterized in that the melting point is 70 °C or less.

12. The precursor for forming a thin film according to Claim 1, characterized by further containing a solvent.

13. The solvent is C １ -C １６ The precursor for forming a yttrium- or scandium-containing thin film according to claim 12, characterized in that it is any one or more of saturated or unsaturated hydrocarbons, ketones, ethers, glymes, esters, tetrahydrofuran, and tertiary amines.

14. The precursor for forming a yttrium- or scandium-containing thin film according to Claim 12, characterized in that the solvent is contained in an amount of 1 to 99% by weight based on the total weight of the precursor for forming a thin film.

15. The precursor for forming a thin film according to Claim 1, characterized by being at least one selected from the group consisting of the following structures. [Chemical Formula 2] 【Chem.】 【Chem.】 [Chemical]

16. A method for forming a yttrium- or scandium-containing thin film, characterized by including a step of forming a thin film on a substrate using the precursor for forming a thin film according to Claim 1 or 12.

17. The step of forming a thin film on the substrate includes a step of depositing the precursor for forming a thin film on the surface of the substrate to form a precursor thin film, and a step of reacting the precursor thin film with a reactive gas. The method for forming a yttrium- or scandium-containing thin film according to Claim 16.

18. The step of forming the precursor thin film according to Claim 17, characterized by including a step of vaporizing the precursor for forming a thin film and transferring it into the chamber.

19. The vapor deposition is performed by any one of a spin-on dielectric (SOD) process, a low temperature plasma (LTP) process, a chemical vapor deposition (CVD), a plasma enhanced chemical vapor deposition (PECVD), a high density plasma-chemical vapor deposition (HDP CVD) process, an atomic layer deposition (ALD) process, or a plasma-enhanced atomic layer deposition (PEALD) process. The method for forming a yttrium- or scandium-containing thin film according to claim 17, characterized in that it is performed by any one of the above processes.

20. The step of forming a thin film on the substrate is The method for forming a yttrium- or scandium-containing thin film according to claim 16, characterized in that it includes a step of supplying the precursor for thin film formation to the substrate and applying plasma to form a thin film.

21. A semiconductor device, characterized in that it includes a yttrium- or scandium-containing thin film manufactured by the thin film formation method according to claim 16.

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