Integrated benchtop semiconductor process cell, and semiconductor manufacturing facility composed of such cells and a semiconductor tool library

Abstract

This specification describes an integrated benchtop semiconductor process cell and a cell-based semiconductor factory. 【Solution】The cell includes a tool compartment in which one or more semiconductor process tools are arranged. Each process tool is modular and assembled from units that define the configuration and function of the tool. The cell also includes one or more support modules fluidly coupled to the semiconductor process tool and external connection parts. Thus, the cell can operate as a stand-alone unit with a minimum number of external connection parts and can be integrated with one or more additional cells to form a cell-based semiconductor factory. The cell can have a minimum installation area (for example, less than 2 to 3 square meters) while supporting one or more tools (for example, four different tools). Thus, the entire semiconductor factory can be formed with minimum equipment requirements (for example, space, power) for producing a small number of devices. A semiconductor tool library for such purposes is also provided.

Description

Background Art

[0001] Cross - reference to Related Applications This application claims the benefit of U.S. Provisional Patent Application 63 / 367,156, filed on June 28, 2022, under 35 U.S.C. Section 119(e), the entire content of which is incorporated herein by reference for all purposes.

[0002] Conventional semiconductor process equipment is very complex and expensive. This equipment is generally used in semiconductor manufacturing factories, commonly referred to as semiconductor foundries or fabs. A typical semiconductor manufacturing factory includes a plurality of different semiconductor process tools arranged to manufacture various semiconductor devices such as integrated circuits. The cost of a typical factory can exceed $1 billion, which is acceptable and even desirable for high - volume, high - profit - margin integrated circuits (memory devices, central processing units, etc.). However, this cost and complexity pose a major obstacle for microfabrication devices other than mainstream semiconductor devices such as microelectromechanical system (MEMS) sensors. In the current semiconductor manufacturing paradigm, it is necessary to manufacture devices in very large quantities to justify the large capital investment. This often becomes an issue because the ratio of investment to market demand cannot be justified from the perspective of quantity and size. The high barriers to entry caused by the large capital investment ultimately prevent the realization of new technologies, which are often classified in the category of microelectromechanical system (MEMS) sensors.

Summary of the Invention

Problems to be Solved by the Invention

[0003] There is a need for new tools and systems that can cost - effectively manufacture low - volume production devices such as MEMS sensors and other types of integrated circuits.

Means for Solving the Problems

[0004] This specification describes an integrated benchtop semiconductor process cell and a cell-based semiconductor manufacturing facility. The cell includes a tool compartment in which one or more semiconductor process tools are disposed. Each process tool is modular and is assembled from units that define the configuration and function of the tool. The cell also includes one or more support modules and external connections fluidly coupled to the semiconductor process tools. Thus, the cell can operate as a stand-alone unit with minimal external connections and can be integrated with one or more additional cells to form a cell-based semiconductor manufacturing facility. The cell can support one or more tools (e.g., four different tools) while having a minimal footprint (e.g., less than 2-3 square meters). Thus, a semiconductor manufacturing facility can be formed with minimal equipment requirements (e.g., space, power) for producing a small quantity of devices. Also provided is a semiconductor tool library for configuring a particular cell and facility.

[0005] In some examples, an integrated benchtop semiconductor process cell for processing a semiconductor substrate is provided. The integrated benchtop semiconductor process cell is composed of a tool compartment, one or more semiconductor process tools, one or more support modules, and external connections. The tool compartment includes a benchtop (e.g., a height selected according to the standing / sitting operator position). One or more semiconductor process tools are arranged within the tool compartment on the benchtop. Each of the one or more semiconductor process tools is selected from the group consisting of a lithography tool, a photoresist process tool, a heat treatment tool, a chemical vapor deposition tool, a sputtering tool, an atomic layer deposition tool, an ion etching tool, and a wafer dicing tool. One or more support modules are fluidly coupled to each of the one or more semiconductor process tools and are all arranged under the benchtop. The one or more support modules include one or more selected from the group consisting of a vacuum pump, a water cooling device, and a gas storage device. The external connections are selected from the group consisting of an exhaust connection, a power connection, and a compressed gas connection. Only the combination of three or fewer external connections and one or more support modules is configured to support all operations of each of the one or more semiconductor process tools of the integrated benchtop semiconductor process cell. That is, no additional power supply or material supply connection is required for the operation of these tools.

[0006] In some examples, the installation area of the integrated benchtop semiconductor process cell is less than 3 square meters or less than 2 square meters. Even with such a small installation area, the integrated benchtop semiconductor process cell can accommodate, for example, two, three, four, or more semiconductor process tools in a single integrated benchtop semiconductor process.

[0007] In some examples, the one or more support modules include a compressor for supplying compressed gas to the one or more semiconductor process tools. Therefore, no external supply of compressed air is required for the operation of the semiconductor process tools.

[0008] In some examples, an integrated benchtop semiconductor process cell uses only up to two external connections to support all operations of at least one of the one or more semiconductor process tools. For example, these up to two external connections include or consist of an exhaust connection and a power connection.

[0009] In some examples, a gas storage device includes all process gases required for the operation of one or more semiconductor process tools. For example, the gas storage device is composed of one or more gas storage containers. In the same or other examples, the maximum power consumption of the integrated benchtop semiconductor process cell is less than 100 kW.

[0010] In some examples, the integrated benchtop semiconductor process cell further includes a plurality of controllers disposed near the one or more semiconductor process tools. The plurality of controllers includes one or more mass flow controllers that fluidly couple the one or more semiconductor process tools to the gas storage device. In some examples, the plurality of controllers further includes one or more RF impedance matchers for one or more of a DC power supply, an RF power supply, a phase shifter, and a heater power supply.

[0011] In the same or other examples, the integrated benchtop semiconductor process cell further includes one or more control modules communicatively connected to the plurality of controllers and composed of a set of instructions for operating the plurality of controllers. For example, some of the plurality of controllers are disposed on the benchtop and the semiconductor process tools.

[0012] In some examples, the integrated benchtop semiconductor process cell further comprises a filter unit configured to flow filtered air into the tool compartment, thereby reducing contamination within the tool compartment surrounding one or more semiconductor process tools. In the same or other examples, the tool compartment comprises a front opening for accessing the benchtop. In some examples, the tool compartment is sealed and comprises a front panel with a plurality of gloves for isolating the benchtop from the environment. In these examples, the integrated benchtop semiconductor process cell comprises a substrate transfer module for isolated transfer between the tool compartment and the environment. In some examples, the diameter of the semiconductor substrate is less than 100 millimeters.

[0013] In some examples, each semiconductor process tool is composed of a main module, a substrate transfer module, a process module, and a substrate receiving module. The main module is hermetically and removably coupled to each of the substrate transfer module, the process module, and the substrate receiving module. The substrate transfer module protrudes into the main module and is configured to place the semiconductor substrate on the substrate receiving module. The substrate receiving module is configured to lift the semiconductor substrate to an adjustable height within the process module. In a more specific example, the main modules of each semiconductor process tool are the same. At least the process modules of the semiconductor process tools are different.

[0014] In some examples, the substrate receiving module is configured to perform at least one function selected from the group consisting of: (a) applying heating or cooling to a semiconductor substrate; (b) flowing a gas across the back surface of the semiconductor substrate; (c) applying an RF bias to the semiconductor substrate; and (d) measuring a parameter on or near the substrate. In the same or other examples, each semiconductor processing tool further comprises a flow control module fluidly coupled to a vacuum pump. In some examples, the substrate transfer module of each semiconductor processing tool is fluidly coupled to a vacuum pump. In the same or other examples, the process module of each semiconductor processing tool is fluidly coupled to a gas storage device.

[0015] In some examples, a cell-based semiconductor manufacturing facility comprises an integrated benchtop semiconductor process cell and an additional integrated benchtop semiconductor process cell. Each of the integrated benchtop semiconductor process cell and the additional integrated benchtop semiconductor process cell comprises a tool compartment, one or more semiconductor processing tools, and one or more support modules. The tool compartment comprises a benchtop. The one or more semiconductor processing tools are disposed within the tool compartment on the benchtop. Each of the one or more semiconductor processing tools is selected from the group consisting of a lithography tool, a photoresist process tool, a heat treatment tool, a chemical vapor deposition tool, a sputtering tool, an atomic layer deposition tool, an ion etching tool, and a wafer dicing tool. The one or more support modules are fluidly coupled to each of the one or more semiconductor processing tools and are disposed under the benchtop. The one or more support modules comprise one or more selected from the group consisting of a vacuum pump, a water cooling device, and a gas storage device. At least one of the one or more support modules of the integrated benchtop semiconductor process cell is fluidly coupled to at least one of the one or more semiconductor processing tools of the additional integrated benchtop semiconductor process cell.

[0016] In some examples, at least one of the one or more support modules of an integrated benchtop semiconductor process cell fluidly coupled to at least one of one or more semiconductor process tools of an additional integrated benchtop semiconductor process cell is a vacuum pump.

[0017] A method of constructing a semiconductor manufacturing line using a semiconductor tool library and comprising semiconductor process tools is also provided. In some examples, the method includes determining the configuration of each semiconductor process tool based on a corresponding one of the semiconductor operations selected for the manufacture of a semiconductor device. The method also includes selecting, from the semiconductor tool library, one of the main modules of each semiconductor process tool, one of the substrate transfer modules, one of the process modules, and one of the substrate receiving modules, based on the configuration of each semiconductor process tool. Finally, the method includes assembling each semiconductor process tool by connecting one of the main modules to one of the substrate transfer modules and one of the process modules, and placing one of the substrate receiving modules inside one of the main modules, the semiconductor process tools forming a semiconductor manufacturing line.

[0018] In some examples, the semiconductor operations are selected from the group consisting of lithography, photoresist processing, heat treatment, chemical vapor deposition, sputtering, atomic layer deposition, ion etching, and wafer dicing.

[0019] In some examples, connecting one of the main modules to one of the substrate transfer modules and one of the process modules includes forming a sealed temporary connection between one of the main modules and each of one of the substrate transfer modules and one of the process modules. In the same or other examples, in a semiconductor tool library, each of the main modules is configured to connect to any one of the substrate transfer modules and separately to any one of the process modules. In some examples, different process modules are configured to perform different semiconductor operations. In the same or other examples, a semiconductor manufacturing line comprises at least three semiconductor process tools having different configurations and configured to perform different semiconductor operations.

[0020] In some examples, a semiconductor manufacturing line comprises an integrated benchtop semiconductor process cell including a tool compartment, one or more support modules, and an external connection. In these examples, the method further includes (a) placing two or more semiconductor process tools on the benchtop of the tool compartment, (b) fluidly coupling two or more semiconductor process tools to one or more support modules including one or more selected from the group consisting of a vacuum pump, a water cooling device, and a gas storage device, and (c) connecting two or more semiconductor process tools to an external connection selected from the group consisting of an exhaust connection, a power connection, and a compressed gas connection.

[0021] In some examples, a semiconductor tool library is composed of multiple types of main modules, multiple types of substrate transfer modules, multiple types of process modules, and multiple types of substrate receiving modules from a semiconductor process library, for each semiconductor process tool and based on the configuration of the semiconductor process tool. Any one of the main modules in the semiconductor tool library is configured to connect to any one of the substrate transfer modules and any one of the process modules, and further configured to receive any one of the substrate receiving modules.

[0022] In some examples, this method further includes reconfiguring at least one semiconductor processing tool by disconnecting one of the main modules from at least one process module and reconnecting one of the different process modules to one of the main modules.

[0023] Also provided is a semiconductor tool library for constructing a semiconductor manufacturing line for processing semiconductor substrates. The semiconductor tool library includes at least one type of main module, at least one type of substrate transfer module, a plurality of types of process modules, and a plurality of types of substrate receiving modules. Any one of the main modules in the semiconductor tool library is configured to be hermetically coupled to any one of the substrate transfer modules and any one of the process modules, and further configured to receive any one of the substrate receiving modules to form one of the semiconductor processing tools of the semiconductor manufacturing line.

[0024] In some examples, each of the plurality of types of process modules is selected from the group consisting of a lithography module, a photoresist process module, a thermal process module, a chemical vapor deposition module, a sputtering module, an atomic layer deposition module, an ion etching module, and a wafer dicing module.

[0025] In some examples, at least one type of main module includes a plurality of types of main modules. In the same or other examples, at least one type of main module includes a plurality of types of substrate transfer modules. In some examples, the diameter of the semiconductor substrate is less than 100 millimeters. In the same or other examples, the installation area of each semiconductor processing tool is less than 0.5 meter × 0.5 meter, and the height is at most 1.5 meters. In some examples, the weight of each semiconductor processing tool is between 20 kilograms and 60 kilograms.

[0026] In some examples, the semiconductor tool library further comprises at least one type of flow control module. Any one of the main modules within the semiconductor tool library is configured to be hermetically coupled to any one of the flow control modules. In the same example or other examples, each of the substrate receiving modules is configured to perform at least one function selected from the group consisting of (a) applying heat to the semiconductor substrate, (b) flowing gas to the back surface of the semiconductor substrate, and (c) applying an RF bias to the semiconductor substrate.

[0027] These examples and other examples will be further described below with reference to the drawings.

Brief Description of the Drawings

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[0050] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the presented concepts. The presented concepts may be practiced without some or all of these specific details. In other instances, well-known process operations have not been described in detail in order not to unnecessarily obscure the described concepts. Some concepts are described in conjunction with specific examples, but it will be understood that these examples are not intended to be limiting. First

[0051] Conventional semiconductor processes typically focus on integrated circuits used in computers and other applications. Integrated circuits tend to be very complex and require complex and expensive manufacturing using relatively standardized semiconductor processes. For example, thousands of different types of integrated circuits can be processed using the same process, or more generally, the same set of processes. Due to these trends, large semiconductor foundries (or fabs) that often cost billions of dollars to set up are created, and high utilization rates are required to justify these high costs. For example, semiconductor foundries are typically set up to process tens of thousands of 300mm wafers per month, and each wafer contains hundreds, and in some cases thousands, of integrated circuits. In addition to large capital expenditures, building a large semiconductor foundry can take several months and is not usually easily adaptable to new designs of semiconductor devices.

[0052] At the same time, the uses of semiconductor devices are rapidly expanding beyond integrated circuits and now include many examples such as quantum computing, augmented / virtual reality, aerospace applications, sensors (e.g., microelectromechanical system (MEMS) sensors), neuromorphic devices, biosensors, etc. A number of new applications typically require fewer devices per application. In other words, the production scale often becomes thousands, hundreds, or individual devices. Therefore, high-volume semiconductor foundries are not suitable for such devices.

[0053] This specification describes an integrated benchtop semiconductor process cell and a cell-based semiconductor manufacturing facility. The process cell includes a tool compartment in which one or more semiconductor process tools are disposed. The process tools are configured to process substrates having a diameter of less than 60 millimeters (e.g., 2 inches or about 50 millimeters), thereby reducing the cost and size of the cell (compared to conventional tools). Further, since the process tools are highly configurable, the design and assembly of the process cell and the facility can be performed relatively quickly and at minimal cost. For example, individual process tools can be assembled using a semiconductor tool library that includes multiple different types of modules, and semiconductor manufacturing cells, lines, and facilities can be assembled from these tools. The terms "cell," "line," and "facility" are used interchangeably to represent a collection of multiple semiconductor tools arranged together according to a process sequence for manufacturing semiconductor devices.

[0054] A process cell includes one or more tool compartments in which one or more semiconductor process tools are disposed. The cell also comprises one or more support modules fluidly coupled to the semiconductor process tools and external connections (e.g., exhaust, electrical, and / or compressed gas), which comprehensively support all operations of the semiconductor process tools. For example, multiple semiconductor process tools in the same process cell can share these support modules, thereby reducing the number of support modules required for the overall operation. In this way, the cell can operate as a stand-alone unit with minimal external connections and can be integrated with one or more additional cells to form a cell-based semiconductor manufacturing factory. The cell can support one or more tools (e.g., 2, 3, 4, or more different tools) while having a minimal footprint (e.g., less than 2 to 3 square meters). Thus, to produce a small quantity of semiconductor devices, an entire semiconductor manufacturing factory can be formed with minimal equipment requirements (e.g., space, power).

[0055] Reducing the size and equipment requirements of an integrated benchtop semiconductor process cell enables the manufacture of a small quantity of semiconductor devices. One example of such semiconductor devices includes MEMS sensors, particularly those with diverse configurations. Unlike conventional integrated circuits (which rely heavily on specific circuit layouts and corresponding lithography masks), MEMS technology focuses on processes and materials that use a variety of substrates, processes, and materials. Therefore, even if it was possible to process MEMS using a conventional semiconductor manufacturing factory, it would be much more difficult.

[0056] Overall, the smaller the substrate size, the lower the complexity and cost of the semiconductor process, enabling the use of versatile and configurable tools that can be used in the manufacture of MEMS sensors and other similar devices. Furthermore, semiconductor process tools and integrated benchtop semiconductor process cells (and larger factories formed using multiple process cells) formed using these tools are highly modular and adaptable. New processes can be easily accommodated by adding new tools that can be specially assembled using a tool library. These new tools can be added to existing process cells or used to form new process cells. This modular approach enables the setup of very specialized manufacturing lines that were impossible in traditional large factories. For example, each process line / factory (comprising one or more process cells equipped with multiple process tools) can be used to manufacture a specific type of device (e.g., 1 line:1 device approach). Subsequently, within days or hours, this line can be retooled for the manufacture of different devices. Finally, a high level of scalability can be achieved by running multiple lines in parallel using the same small facility (physical space, power, etc.). When setting up a new production line, the "time to first wafer" is less than one month, costs are minimal, and production flexibility for future changes is increased. At the same time, since the initial capital expenditure is much lower, the processing cost can potentially be equivalent to that of a large factory. Example of an integrated benchtop semiconductor process cell

[0057] FIG. 1A is a perspective view of an integrated benchtop semiconductor process cell 100 for processing a semiconductor substrate 190 according to some examples. FIGS. 1B-1D are corresponding front and side views. The integrated benchtop semiconductor process cell 100 can be used as a stand-alone unit. All of the various examples presented in this section are directed to stand-alone operation such that all of the major operating component units are provided within the unit. Alternatively, multiple integrated benchtop semiconductor process cells 100 can be assembled into a cell-based semiconductor manufacturing factory 300, as will be further described with reference to FIGS. 3 and 4 below. In these examples, various components of the integrated benchtop semiconductor process cell 100 (e.g., gas supply, vacuum pump, water cooling device, etc.) can be shared among these multiple cells.

[0058] Referring to FIG. 1A, the integrated benchtop semiconductor process cell 100 includes one or more tool compartments 110, one or more semiconductor process tools 120, one or more support modules 130, and an external connection portion 170. The combination of the support module 130 and the external connection portion 170 provides all of the facilities for operating each semiconductor process tool 120 (e.g., when the integrated benchtop semiconductor process cell 100 is used as a stand-alone unit). The number of external connection portions 170 is minimal and can be three, two, or less. Note that these external connections 170 are provided by external facilities. Thus, the integrated benchtop semiconductor process cell 100 requires very minimal external facilities for its operation, thereby enabling the integrated benchtop semiconductor process cell 100 to be used in many different production environments.

[0059] Furthermore, the size of the integrated benchtop semiconductor process cell 100 is minimal. In some examples, the footprint of the integrated benchtop semiconductor process cell 100 is less than 3 square meters, or less than 2 square meters. Referring to FIG. 1A, the length (L) of the integrated benchtop semiconductor process cell 100 may be less than 4 meters, less than 3.5 meters, or less than 3 meters. In the same or other examples, the width (W) of the integrated benchtop semiconductor process cell 100 may be less than 2 meters, less than 1.5 meters, or less than 1 meter. Despite such small dimensions, it should be noted that the integrated benchtop semiconductor process cell 100 can accommodate one or more semiconductor process tools 120 and various support modules 130 necessary for the operation of these tools. In some examples, the height (H1) of the integrated benchtop semiconductor process cell 100 can be less than 3 meters, less than 2.5 meters, or less than 2 meters. Overall, the size of the integrated benchtop semiconductor process cell 100 is such that the cell can be easily placed in various types of facilities without requiring a large floor area or high ceiling. In fact, the size of the integrated benchtop semiconductor process cell 100 is comparable to that of a typical glove box or fume hood used in a laboratory / manufacturing site.

[0060] Referring to FIG. 1A, in some examples, the integrated benchtop semiconductor process cell 100 also includes one or more controllers 140, a control module 150, and / or a filter unit 160. For example, the controller 140 is disposed on top of the tool compartment 110 and can control the gas flow, power, and other facilities to the semiconductor process tool 120. The filter unit 160 can also be disposed on top of the tool compartment 110 or on top of the controller 140 and can be used to send filtered air to the tool compartment 110. The control module 150 is communicatively connected to various sensors and actuators of the controller 140, the semiconductor process tool 120, and other components, and can be used to control the operation of the semiconductor process tool 120 or, more generally, to control the operation of the entire integrated benchtop semiconductor process cell 100. The control module 150 can be disposed under the tool compartment 110, for example, next to the support module.

[0061] For each component of the integrated benchtop semiconductor process cell 100, it will be described in more detail with reference to FIGS. 1A-1D. The tool compartment 110 can include a benchtop 112 for disposing one or more semiconductor process tools 120. In some examples, the benchtop 112 is disposed at a height (H2) set either at the position where the operator stands (e.g., H2 = 1 to 1.2 meters) or at the position where the operator sits (e.g., H2 = 0.6 to 0.8 meters) from the bottom of the integrated benchtop semiconductor process cell 100. It should be noted that the operator needs to access one or more semiconductor process tools 120 to transport the semiconductor substrate 190, which can be transported, for example, using a dedicated wafer carrier.

[0062] Referring to FIG. 1C, in some examples, the tool compartment 110 can be open to the environment, for example, having a front access opening. For example, the integrated benchtop semiconductor process cell 100 can be operated in a cleanroom. Further, the filter unit 160 can provide a sufficient flow of clean air to minimize contamination of the substrate. For example, due to the specific location and configuration of the filter unit 160, an environment such as a cleanroom (e.g., up to a class 10 or ISO 4 cleanroom environment) can be achieved without actually using a cleanroom.

[0063] Referring to FIG. 1D, in some examples, the tool compartment 110 is either a sealed area (e.g., isolated from the environment) or an open area. For example, the tool compartment 110 has a transparent front panel or wall with gloves so that an operator can reach in and operate one or more semiconductor process tools 120 within the tool compartment 110. In these examples, the cleanliness of the tool compartment 110 can be maintained at a much higher level, such as class 10 (ISO 4) or above. This sealed tool compartment 110 can also be used to achieve specific environmental conditions (e.g., low humidity, low oxygen content, etc.) for processing semiconductor substrates 190 that are sensitive to the surrounding air.

[0064] In some examples, the height (H3) of the tool compartment 110 is between 1 meter and 2.5 meters to provide sufficient access to one or more semiconductor process tools 120. The sides of the benchtop 112 can be the same as the installation area of the above-described integrated benchtop semiconductor process cell 100. The benchtop 112 is modular and can be integrated with additional benchtops to form a factory, as will be further described with reference to FIGS. 3 and 4 below.

[0065] Referring to FIGS. 1A - 1D, the integrated benchtop semiconductor process cell 100 includes one or more semiconductor process tools 120 disposed in tool compartments 110 on a benchtop 112. FIG. 1A shows two semiconductor process tools 120, and FIG. 1B shows four semiconductor process tools 120, but any number of tools is within the scope. This number is determined by the size of the benchtop 112 (described above), the size of each semiconductor process tool 120 (described below), the access requirements of each tool, the process sequence, and other factors.

[0066] The semiconductor process tool 120 is used to process the semiconductor substrate 190 in various ways. When the semiconductor substrate 190 is processed by one tool, the semiconductor substrate 190 is transported to another tool (e.g., by an operator). In some examples, the transport of the substrate is achieved manually (e.g., by an operator) or automatically (e.g., using a specially configured and controlled robotic arm).

[0067] The type of the semiconductor process tool 120 varies depending on the type of process to be executed, and some of them will be further described below. In some examples, the semiconductor substrate 190 is placed on or within a substrate carrier, and the substrate carrier is moved from one tool to another, so that additional direct contact with the semiconductor substrate 190 is not required.

[0068] The semiconductor process tool 120 is selected from the group consisting of lithography tools, polymer processing tools (e.g., photoresist processing tools), heat treatment tools, chemical vapor deposition (CVD) tools, sputtering tools, atomic layer deposition (ALD) tools, ion etching tools, wafer dicing tools, reactive ion etching, deep reactive ion etching, vapor etching, wet etching, electroplating, wafer bonding, etc.

[0069] In some examples, the diameter of the semiconductor substrate 190 is 100 millimeters or less, 80 millimeters or less, and even 60 millimeters or less. As described above, such a substrate size can reduce the size of the process tool, which helps to reduce costs and improve modularity.

[0070] Referring to FIGS. 1A and 1B, the integrated benchtop semiconductor process cell 100 also includes one or more support modules 130 fluidly coupled to respective ones of one or more conduits. In some examples, this fluid coupling is controlled by a controller 140. Note that the controller 140 is disposed closer to the semiconductor process tool 120 than one or more support modules 130. In this way, the volume in the conduit fluidly coupling the semiconductor process tool 120 and the controller 140 is minimized. This approach allows the support module 130 to be placed further away from the semiconductor process tool 120, for example, under the tool compartment 110, more specifically, under the benchtop 112.

[0071] Some examples of the support module 130 include a vacuum pump 132, a water cooling device 134, a gas storage device 136, and a gas distribution and control device. In some examples, the support module 130 of the same cell includes all three of the vacuum pump 132, the water cooling device 134, and the gas storage device 136. Alternatively, when the integrated benchtop semiconductor process cell 100 is integrated with other cells, one or more of these three support modules can be shared and need not be included in each process cell.

[0072] Since all conduits and the semiconductor process tool 120 are small in size, the vacuum pump 132 can be the same size as a mechanical vacuum pump used in a conventional single chamber. This is because the overall evacuation volume of the semiconductor process tool 120 is significantly smaller than that of conventional semiconductor devices. In comparison, in a conventional semiconductor process tool, a much more expensive turbo vacuum pump is typically required. The selection of the vacuum pump and additional aspects of complexity will be described below with reference to FIG. 5A.

[0073] In some examples, the gas storage device 136 includes all the gases necessary for the complete operation of all semiconductor process tools 120. Examples of gases include, but are not limited to, SF6, C4F8, CF4, O2, Ar, N2, XeF2, He, CHF3, C3F8, C2F6, CH4, SiH4, Si2H6, Cl2, BCl3, etc. For example, the gas storage device 136 includes at least two gas storage containers, at least four gas storage containers, at least six gas storage containers, or at least eight gas storage containers.

[0074] Referring to FIG. 1B, the integrated benchtop semiconductor process cell 100 also includes external connections 170 such as an exhaust connection 171, a power connection 172, and a compressed gas connection 173. When the integrated benchtop semiconductor process cell 100 is operable as a stand-alone unit, the combination of the external connections 170 and one or more support modules 130 is configured to support all operations of each semiconductor process tool 120 of the integrated benchtop semiconductor process cell 100. Alternatively, when the integrated benchtop semiconductor process cell 100 is integrated with other cells, the combination of the external connections 170 of these multiple cells and the support modules 130 is configured to support all operations of each semiconductor process tool 120 of all the cells.

[0075] The number of these external connection parts 170 may be three or less. For example, the external connection part 170 includes an exhaust connection part 171 and a power connection part 172, but does not include a compressed gas connection part 173. Instead, the compressed gas is supplied by one of the support modules 130, such as a compressor, or more specifically, an air compressor. In this example, the combination of the exhaust connection part 171, the power connection part 172, and one or more support modules 130 is configured to support all operations of each semiconductor process tool 120 of the integrated benchtop semiconductor process cell 100.

[0076] In some examples, the maximum power consumption of the integrated benchtop semiconductor process cell 100 is less than 100 kW, less than 60 kW, less than 30 kW, or less than 10 kW. In other words, the power connection part 172 may be a standard industrial power connection.

[0077] In some examples, the integrated benchtop semiconductor process cell 100 further includes one or more controllers 140 disposed near one or more semiconductor process tools 120. An example of one controller is a mass flow controller that fluidly couples one or more semiconductor process tools 120 to a gas storage device 136. Examples of additional controllers include, but are not limited to, one or more RF impedance matchers for one or more of a DC power supply, an RF power supply, a phase shifter, an impedance matching network, a pressure controller, a flow controller, and a heater power supply.

[0078] In some examples, the integrated benchtop semiconductor process cell 100 further includes a control module 150 communicatively coupled to one or more controllers 140. The control module 150 includes a set of instructions for operating the plurality of controllers 140. The control module 150 can include a computer system and / or a power source (e.g., an RF power source for an individual tool). The computer system can include a processor unit, a memory, a persistent storage, a communication unit, and an input / output unit. For example, the processor unit serves to execute software instructions that can be loaded into the memory. The memory and the persistent storage can be in the form of computer-readable storage devices (e.g., random access memory, hard drive, flash memory). The communication unit can provide communication with other computer systems or devices (e.g., via a local network and / or a global network). The input / output unit can include a keyboard, a mouse, and / or a display. Overall, the instructions of the operating system, applications, and / or programs are located in a storage device that communicates with the processor unit. The processor unit can execute various processes using computer-implemented instructions. These instructions are referred to as program code, computer-usable program code, or computer-readable program code.

[0079] In some examples, the integrated benchtop semiconductor process cell 100 further comprises a filter unit 160 configured to flow filtered air (e.g., laminar flow) into the tool compartment 110, thereby reducing the contamination level within the tool compartment 110 around one or more semiconductor process tools 120. For example, the filter unit 160 can be disposed on top of the tool compartment 110 and is configured to direct the filtered air towards the benchtop 112, as schematically shown in FIG. 1B. In some examples, the integrated benchtop semiconductor process cell 100 comprises a plurality of filter units 160.

[0080] FIG. 1B shows the physical and communication couplings between different components of the integrated benchtop semiconductor process cell 100. For example, the control module 150 is communicatively coupled to one or more controllers 140 and / or semiconductor process tools 120 and can control the operation of these semiconductor process tools 120. In some examples, the semiconductor process tools 120 are equipped with various sensors (e.g., pressure sensors, temperature sensors, position sensors) that provide feedback to the control module 150. The support module 130 is fluidly coupled to the controller 140. Similarly, the external connection 170 is fluidly (e.g., to the compressed gas connection 173) and / or electrically (e.g., to the power connection 172) coupled to the controller 140. The controller 140 is fluidly and / or electrically coupled to the semiconductor process tools 120. Example of a semiconductor process tool

[0081] FIG. 2A shows a semiconductor process tool 120 according to some examples. The size of the semiconductor process tool 120 is such that it can be used on the bench top 112 of the integrated benchtop semiconductor process cell 100. For example, the semiconductor process tool 120 typically has an installation area (i.e., width (W) and / or depth (D)) of less than 0.5 meter × 0.5 meter and a height of up to 1.5 meters. For comparison, conventional semiconductor tools typically have a size of 5 to 100 square meters. Further, the weight of the semiconductor process tool 120 is typically 20 kilograms to 60 kilograms, which enables an operator to move and reposition it on the bench top 112.

[0082] Referring to FIGS. 2A and 2B, the semiconductor process tool 120 is an assembly of various components such as a main module 1120, a process module 1130, a substrate transfer module 1110, a substrate receiving module 1140, and a flow control module 1150. The main module 1120, also referred to as the base assembly, is used to connect, support, and / or house other modules. For example, the main module 1120 may be in the shape of a cube, and other modules are attached (e.g., sealable and fluidly coupled) to different sides of this cube. In other words, the main module 1120 can form a sealed temporary connection with each of the other modules attached to the main module 1120.

[0083] The process module 1130, also referred to as the upper chamber, is attached to the first or upper surface of the main module 1120. Different types of process modules 1130 (e.g., style A, style B, style C, etc.) can be interchangeably connected to the main module 1120. The type of the process module 1130 (and, in some examples, the type of the substrate receiving module 1140) defines semiconductor operations that can be executed on the semiconductor substrate 190. Note that each type of module connected to the main module 1120 can be exchanged independently of the other modules. For example, the process module 1130 can be exchanged while the substrate receiving module 1140 is retained. Examples of the process module 1130 include, but are not limited to, a sputtering tool, a deposition tool, a deep reactive ion etching (DRIE), a reactive ion etching tool, a plasma etching tool, a plasma cleaning tool, an ion implantation tool, an annealing tool, a plasma enhanced chemical vapor deposition (PECVD) tool, an inductively coupled plasma chemical vapor deposition (ICPCVD) tool, an atomic layer deposition (ALD) tool, a vapor etching tool, and a wet chemical processing tool. The additional functions of the process module 1130 and the connection to the main module 1120 will be described below with reference to FIG. 11.

[0084] The substrate transfer module 1110, also called a load lock, is used to transfer the semiconductor substrate 190 from the environment to the main module 1120 and may project into the main module 1120 in some examples. Once inside the main module 1120, the semiconductor substrate 190 is supported by a substrate receiving module 1140, also called a chuck. Different types of substrate receiving modules 1140 are within the scope (e.g., modules with heaters, gas flow lines, RF bias mechanisms, and measurement systems). Finally, the control module 1150 can be used to control the pressure within the module 1120. Thus, the substrate receiving module 1140 can be configured to perform at least one function selected from the group consisting of (a) applying heat to the semiconductor substrate, (b) flowing gas to the back surface of the semiconductor substrate, and (c) applying an RF bias to the semiconductor substrate). Example of a cell-based semiconductor manufacturing facility

[0085] The above integrated benchtop semiconductor process cell 100 can be used together with one or more additional integrated benchtop semiconductor process cells that are disposed in the same location and used to process the same set of semiconductor substrates. A set of multiple integrated benchtop semiconductor process cells can be specifically configured to process semiconductor substrates according to a specific processing sequence, and may be referred to as a cell-based semiconductor manufacturing factory. Various examples of cell-based semiconductor manufacturing factories will be described below with reference to FIGS. 3 and 4. Specifically, each cell may not have enough space to accommodate all the semiconductor process tools 120 required for this processing sequence. In some examples, the processing sequence requires more than 10 different processing operations, each requiring a different semiconductor process tool. Each integrated benchtop semiconductor process cell 100 can be reconfigured to use new semiconductor process tools, but it should be noted that this reconfiguration process takes time. Furthermore, since multiple integrated benchtop semiconductor process cells 100 can be used in the same cell-based semiconductor manufacturing factory to execute the same semiconductor process operations in parallel, the throughput of the cell-based semiconductor manufacturing factory is improved.

[0086] Referring to FIGS. 3 and 4, a cell-based semiconductor manufacturing factory 300 includes an integrated benchtop semiconductor process cell 100 and one or more additional integrated benchtop semiconductor process cells 101. The number of additional integrated benchtop semiconductor process cells 101 can be any number, such as 1, 2 (shown in FIG. 1A), 3, 4 (shown in FIG. 1B), 5, or more. The total number of cells and the configuration of each cell are determined by the processing requirements of the cell-based semiconductor manufacturing factory 300.

[0087] Each of the additional integrated benchtop semiconductor process cells 101 can be configured in the same manner as the integrated benchtop semiconductor process cell 100 described above with reference to FIGS. 1A - 1D. For example, the additional integrated benchtop semiconductor process cell 101 can include a tool compartment 110 with a benchtop 112. The additional integrated benchtop semiconductor process cell 101 also includes one or more semiconductor process tools 120 disposed in the tool compartment 110 on the benchtop 112. Various examples of these semiconductor process tools 120 have been described above.

[0088] The semiconductor process tools 120 of all cells in the cell - based semiconductor manufacturing factory 300 can be arranged in various ways as will be described below with reference to FIG. 4. For example, the semiconductor process tools 120 can be arranged according to an operation sequence. For example, at least two semiconductor process tools 120 used to perform two consecutive operations are arranged adjacent to each other within the same cell or two adjacent cells. This approach minimizes the handling of the substrate, i.e., the distance that the semiconductor substrate 190 needs to move during the entire process in the cell - based semiconductor manufacturing factory 300. In some examples, as schematically shown in FIG. 3, a plurality of operations are performed using the same semiconductor process tool 120.

[0089] In some examples, the integrated benchtop semiconductor process cell 100 and one or more additional integrated benchtop semiconductor process cells 101 are arranged in a row, as schematically shown in FIG. 3 for example. This row can represent a series of operations. However, other arrangements (such as the arrangement shown in FIG. 4) are also within the scope of the present invention. Two adjacent cells can be environmentally isolated from each other using a load lock, for example, if the cells have environmentally isolated tool compartments. Alternatively, two or more cells can be combined to form an environmentally isolated tool compartment without isolating the adjacent tool compartments.

[0090] Similar to the integrated benchtop semiconductor process cell 100, an additional integrated benchtop semiconductor process cell 101 also includes one or more support modules 130 fluidly coupled to respective ones of one or more semiconductor process tools 120. These support modules 130 can also be placed under the benchtop 112. In some examples, one or more support modules 130 within the cell-based semiconductor manufacturing factory 300 can be shared by semiconductor process tools 120 of different cells. This sharing is similar to sharing the support modules 130 within a cell (i.e., by semiconductor process tools 120 within the same cell). In inter-cell sharing, one support module 130 of the integrated benchtop semiconductor process cell 100 can be fluidly coupled to the semiconductor process tool 120 of an additional integrated benchtop semiconductor process cell 101. It should be noted that this support module 130 can also be coupled to one or more semiconductor process tools 120 of various other cells within the cell-based semiconductor manufacturing factory 300. Generally, any support module 130 of any cell can be connected to any semiconductor process tool 120 within the cell-based semiconductor manufacturing factory 300, which includes various one-to-one connections (e.g., one support module is connected to one tool), one-to-many connections, many-to-one connections, and even many-to-many connections (e.g., multiple vacuum pumps are fluidly connected to the same vacuum manifold that supports different semiconductor process tools 120). Overall, this inter-cell support within the cell-based semiconductor manufacturing factory 300 reduces the number of support modules 130 across the factory and enables additional features and functionality.

[0091] Some specific examples of sharing support module 130 among different integrated benchtop semiconductor process cells 101 will be described with reference to FIG. 4. Specifically, FIG. 4 shows a vacuum pump 132 that is shared by, or more specifically, fluid-coupled to, nine semiconductor process tools 120 arranged in three different cells. FIG. 4 also shows a water cooling device 134 that is shared by six semiconductor process tools 120 arranged in two different cells.

[0092] FIGS. 5A-5D show various examples of processing a semiconductor substrate using an integrated benchtop semiconductor process cell 100. Specifically, all steps of each process can be performed in one integrated benchtop semiconductor process cell 100, or in a plurality of integrated benchtop semiconductor process cells 100 arranged in a manufacturing line (i.e., a factory). Each step is performed by one of the semiconductor process tools 120 within the integrated benchtop semiconductor process cell 100. The selection of the semiconductor process tool 120 is determined by the required processing operation.

[0093] For example, FIG. 5A corresponds to a method 500 of manufacturing a MEMS piezoelectric or piezoresistive transducer. Method 500 can start with depositing a piezoelectric structure (e.g., PZT, AlN (aluminum nitride)) on a silicon substrate (block 502). This operation is performed using a sputtering tool and then patterned using a lithography tool. Method 500 can proceed to etching the silicon substrate to form an opening on the back side of the substrate (opposite the piezoelectric structure) (block 504). This operation can be performed using a deep reactive ion etching (DRIE) tool. By using a DRIE tool, the opening becomes geometrically complex and has a large aspect ratio, which can improve the performance and functionality of the device. Method 500 can proceed to depositing a metal contact (e.g., Au, Al, or Cr) on the piezoelectric structure (block 506). This operation can be performed using a sputtering tool or a vapor deposition tool.

[0094] Figure 5B shows an example of a method 510 for manufacturing a MEMS pressure sensor. Method 500 begins with introducing / implanting a material (e.g., boron, phosphorus, or arsenic) onto the surface of a silicon substrate (block 512). This operation can be performed using an ion implantation / annealing tool. Method 500 can proceed to etching the silicon substrate to form an opening on the back surface of the substrate (opposite the implanted surface of the substrate) (block 514). This operation can be performed using a deep reactive etching or wet etching tool. Method 500 can proceed to depositing a metal contact (e.g., Au, Al, or Cr) on the implanted material (block 516).

[0095] Figure 5C shows an example of a method 520 for manufacturing a microheater that can be used for applications such as gas sensing. Method 500 begins with depositing and patterning an insulator (e.g., silicon nitride or silicon dioxide) on a silicon substrate (block 522). This operation can be performed using a plasma enhanced chemical vapor deposition (PECVD) tool or an inductively coupled plasma chemical vapor deposition (ICPCVD) tool. Method 500 can proceed to depositing and patterning a metal layer (e.g., Au, Al, or Cr) (block 524). This operation can be performed using a sputtering tool or a vapor deposition tool. Method 500 can proceed to etching back a cavity on the back surface of the substrate (opposite the metal layer) (block 526). This operation can be performed using a deep reactive etching or wet etching tool.

[0096] Figure 5D shows an example of a method 530 for manufacturing a cantilever for use in applications such as electromechanical switches and fluid valves. Method 500 begins with depositing an insulating layer (e.g., silicon nitride) on the surface of a silicon substrate (block 531). This operation can be performed using a PECVD / ICPCVD tool. Method 500 can proceed to depositing and patterning a first metal layer (e.g., Au, Al, or Cr) using a PVD tool (e.g., a sputtering tool or an evaporation tool) (block 532). Method 500 can proceed to depositing and patterning an insulating layer (e.g., silicon dioxide) using a PECVD / ICPCVD tool (block 533). Method 500 can proceed to depositing and patterning an amorphous silicon layer using a PECVD / ICPCVD tool (block 534). Method 500 can proceed to depositing and patterning a second metal layer using a PVD tool (a sputtering tool or an evaporation tool) (block 535). Method 500 can proceed to etching a first insulator (e.g., silicon dioxide) using a vapor etching tool or a wet etching tool (e.g., using vapor high frequency plasma) (block 536). Using tools in such a sequence enables the fabrication of complex and delicate structures that are protected from external contaminants and forces until they are released and able to function in a final step. This results in a significant improvement in manufacturing yield.

[0097] Figures 5A - 5D show only four processing examples, but due to the modularity and size of the semiconductor processing tool 120, any type of manufacturing line (within a single integrated benchtop semiconductor processing cell 100, or within a combination of integrated benchtop semiconductor processing cells 100 arranged in a line) can be arranged. Additional examples of MEMS and other devices that can be manufactured using the integrated benchtop semiconductor processing cell 100 include, but are not limited to, microfluidic devices, micromirrors, actuators, resonators, environmental sensors, inertial measurement devices, vibration isolators, and energy harvesters. Example of the operation of an integrated benchtop semiconductor process cell - Figure 6

[0098] Figure 6 is a process flow chart corresponding to a method 600 of processing a semiconductor substrate 190 using an integrated benchtop semiconductor process cell 100, according to some examples. In some examples, method 600 includes transporting the substrate into an enclosure, such as a cleanroom of the integrated benchtop semiconductor process cell (optional block 605), an example of which is shown in FIG. 1D. For example, the enclosure can be equipped with a load lock for transporting the substrate. Further, the substrate can be moved between process cells (enclosures such as cleanrooms) via a clean box.

[0099] Method 600 proceeds to process the substrate using a first semiconductor process tool of the integrated benchtop semiconductor process cell (block 610). The type of tool and the corresponding process can be selected based on the particular processing sequence for this substrate. Some examples were shown above with reference to FIGS. 5A, 5B, 5C, and 5D.

[0100] Method 600 proceeds to process the substrate using a second semiconductor process tool of the integrated benchtop semiconductor process cell (block 620). Again, the type of tool and the corresponding process can be selected based on the particular processing sequence for this substrate. In some examples, since both the process tools (used for two consecutive processing steps) and the tool processes are arranged in the same process cell, the transport distance is shortened and the overall process is rationalized. In fact, both process tools (used for two consecutive processing steps) can be arranged adjacent to each other. Alternatively, the two process tools can be arranged in different process cells (e.g., two adjacent process tools).

[0101] Method 600 can continue processing with additional process tools until all processing steps are completed. In some examples, the same process tool is used more than once in the same process sequence.

[0102] Method 600 may include a step (block 690) of removing the substrate from a housing such as a clean room if a housing such as a clean room is used. Advantages of small scale and tool integration - Figures 7A - 7D

[0103] Since the semiconductor process tool 120 is small-scale, the integrated benchtop semiconductor process cell 100 and the cell-based semiconductor manufacturing factory 300 can realize various advantages that cannot be obtained with conventional semiconductor tools. Due to this difference in size, the semiconductor process tool 120 becomes portable, and the integrated benchtop semiconductor process cell 100 becomes highly configurable. Specifically, since the components used in existing commercial semiconductors are large in size and high in cost, it is physically and logically difficult to reconfigure individual tools or the tools within a processing line. The smaller semiconductor process tool 120 can be easily replaced with another tool within the cell and can, for example, be easily relocated, connected to the support module 130, or generally reconfigured as further described below with reference to the tool library.

[0104] Another advantage of the small tool size is the small internal volume of these tools. For example, the internal volume of the semiconductor process tool 120 (described herein) is less than 5 L, or less than 1 L. In comparison, the internal volume of conventional semiconductor tools is typically 10 - 100 L. Due to this difference in internal volume, as described below with reference to FIGS. 7A - 7D, the complexity and cost of operating these semiconductor process tools 120 are reduced (compared to conventional semiconductor tools).

[0105] FIG. 7A is a schematic diagram showing the complexity to reach a specific vacuum state as a function of the vacuum volume. For the purposes of the present disclosure, the vacuum complexity is a comprehensive factor including the type and cost of the equipment, the time required to reach this vacuum state, etc. When the volume is small, the complexity is minimized by the type of equipment required (e.g., a mechanical vacuum pump). When the volume is large, more advanced equipment such as a turbo vacuum pump is required.

[0106] FIG. 7B schematically shows the complexity of generating specific RF conditions as a function of the processing volume or chamber size. For example, the larger the volume, the more RF power is required to ignite and maintain the plasma conditions. At the same time, high-power generators are more expensive because they require the construction of different architectures and more expensive components. In large-scale plasma discharges, external confinement and modulation may also be required to achieve appropriate density and uniformity.

[0107] FIG. 7C is a schematic diagram showing the complexity of maintaining plasma uniformity as a function of the vacuum volume. It should be noted that the larger the chamber, the more complex the design required to achieve and maintain plasma uniformity. Also, in large-scale plasma discharges, external confinement and modulation may be required to achieve appropriate density and uniformity.

[0108] FIG. 7D is a schematic diagram showing the complexity of maintaining temperature / thermal uniformity as a function of the size of the substrate to be processed. When processing large substrates, various control methods and designs such as multi-zone substrate heaters and multi-chamber averaging are required. These increase the complexity, size, and cost of the processing tool. Example of a semiconductor tool library - Figure 8

[0109] As described above, the manufacture of semiconductor devices involves various operations, each requiring a specially configured tool. The number of operations and tools varies depending on the complexity of the device being manufactured, easily exceeding several dozen types. The acquisition and setup of each tool can be prohibitively costly, especially in the case of low-volume production in a traditional semiconductor manufacturing environment. Each tool is very expensive and tends to be dedicated to a specific operation. Reconfiguring existing tools for a new process can be extremely costly and even impossible.

[0110] This specification describes a method and system for reducing the complexity in constructing a semiconductor process line equipped with different types of semiconductor process tools. This is achieved by using a semiconductor tool library that adopts a modular approach in the design and assembly of each tool. For example, each semiconductor tool can be assembled from a main module, a substrate transfer module, a process module, a substrate receiving module, and a flow control module. The semiconductor tool library can include multiple different modules of each type. When a new tool is needed, a specific set of modules is selected from the library (e.g., based on the requirements of the tool) and assembled into the tool.

[0111] FIG. 8 is a process flow chart 800 showing various high-level stages in manufacturing a semiconductor device using a semiconductor tool library. Block 810 represents the specifications of the semiconductor device.

[0112] Block 820 represents a semiconductor device manufacturing process developed based on semiconductor device specifications (block 810). This process may include several different operations (block 822), which have a specific sequence, and specific semiconductor process tools are required to perform each operation. Overall, the semiconductor device manufacturing process determines the corresponding semiconductor process line configuration (block 830), which includes a specific configuration of all individual semiconductor process tools (block 832). These line / tool configurations are used to select specific modules (block 842) from a semiconductor tool library (block 840) (block 850). Next, these selected modules are used to assemble a specific semiconductor process tool (block 860), for example, by combining a main module, a substrate transfer module, a process module, and a substrate receiving module. These assembled semiconductor process tools (block 872) form a semiconductor process line (block 870), execute the planned semiconductor process operations (block 880), and are used to manufacture semiconductor devices (block 890) according to the specifications.

[0113] FIG. 9 is a process flow chart corresponding to a method 900 for constructing a semiconductor process line including a semiconductor process tool 120 using a semiconductor tool library. Method 900 can start from receiving the specifications of a semiconductor device (block 910). Various examples of semiconductor devices (e.g., MEMS) will be described below. The specifications may include various structural and / or functional characteristics of the device.

[0114] Method 900 can proceed to develop a manufacturing process for the semiconductor device based on the specifications of the semiconductor device (block 920). This process may include a series of operations specially adjusted to meet the various structural and functional requirements of the device. Above, several examples were shown and described with reference to FIGS. 5A and 5B.

[0115] Method 900 can proceed to determine the configuration of each semiconductor process tool (block 930) based on one of the corresponding semiconductor operations selected for the manufacture of the semiconductor device. For example, each operation has a corresponding process tool. Note that in some examples, the same process tool can be used to perform multiple operations in the same process.

[0116] Method 900 can proceed to select, from a semiconductor tool library, one of the main modules of each semiconductor process tool, one of the substrate transfer modules, one of the process modules, and one of the substrate receiving modules, based on the configuration of each semiconductor process tool (block 940). This step is shown in FIG. 10A showing semiconductor device manufacturing process 1010, semiconductor manufacturing line 1020, and semiconductor tool library 1030. As described above, semiconductor device manufacturing process 1010 is developed to include various semiconductor process operations 1019 schematically shown as first semiconductor process operation 1011, second semiconductor process operation 1012, and (optionally) third semiconductor process operation 1013. In general, semiconductor device manufacturing process 1010 can include two or more semiconductor process operations 1019. The type and number of these semiconductor process operations 1019 are determined by the structural and functional requirements of the semiconductor device specification. It should be noted that each of the semiconductor process operations 1019 corresponds to a semiconductor process tool. The set of these semiconductor process tools 120 forms semiconductor manufacturing line 1020. In some examples, semiconductor process tools 120 are disposed in one or more integrated benchtop semiconductor process cells 100 to form semiconductor manufacturing line 1020. Various examples of integrated benchtop semiconductor process cells 100 were described above with reference to FIGS. 1A-1D. Some aspects of semiconductor manufacturing lines, also called cell-based semiconductor manufacturing factories, were described above with reference to FIGS. 3-4.

[0117] For example, FIG. 10A shows a first semiconductor process operation 1011 corresponding to a first semiconductor process tool 1021, a second semiconductor process operation 1012 corresponding to a second semiconductor process tool 1022, and (optionally) a third semiconductor process operation 1013 corresponding to a third semiconductor process tool 1023. In some examples, the same semiconductor process tool can be used to perform two or more operations in the semiconductor device manufacturing process 1010. In other words, the number of semiconductor process tools can be the same as or less than the number of semiconductor process operations.

[0118] Referring to FIG. 10A, each semiconductor process tool is formed using different modules such as one of the main modules 1040, one of the substrate transfer modules 1050, one of the process modules 1060, and / or one of the substrate receiving modules 1070. Each module type can have different subtypes. For example, the main module 1040 includes a first type of main module 1041, a second type of main module 1042, and / or a third type of main module 1043. Similarly, the transfer module 1050 includes a first type of transfer module 1051, a second type of transfer module 1052, and / or a third type of transfer module 1053. The process module 1060 includes a first type of process module 1061, a second type of process module 1062, and / or a third type of process module 1063. Finally, the substrate receiving module 1070 includes a first type of substrate receiving module 1071, a second type of substrate receiving module 1072, and / or a third type of substrate receiving module 1073. All modules (different types and subtypes) form the semiconductor tool library 1030.

[0119] It should be noted that each subtype of the main module 1040 can be connected to three types of other subtypes. For example, any one of the main modules 1040 can be connected to any one of the substrate transfer modules 1050, any one of the process modules 1060, and separately to any one of the substrate receiving modules 1070. This provides various options for the semiconductor process tool 120. For example, if there are two different subtypes for each of the four types of modules (i.e., the main module 1040, the substrate transfer module 1050, the process module 1060, and the substrate receiving module 1070), theoretically 16 unique examples of semiconductor process tools 120 are generated. Increasing the number of subtypes (for each of the four types) to 10, the number of examples of unique tools increases to 10,000 (or 10 4 ). These examples demonstrate the flexibility of the modular approach and the advantages of the semiconductor tool library 1030. This combined approach is shown in FIG. 10B.

[0120] As shown in FIG. 11, it should be noted that each subtype of the main module 1040 can be connected to each subtype of the other three types by the specific interfaces used in each module. For example, any one of the substrate transfer modules 1110 is equipped with a substrate transfer to main interface 1112, which is configured to connect to a main to substrate transfer interface 1122 of any one of the main modules 1120. Similarly, any one of the process modules 1130 is equipped with a process to main interface 1132, which is configured to connect to a main to process interface 1124 of any one of the main modules 1120. Finally, any one of the substrate receiving modules 1140 is equipped with a substrate receiving to main interface 1142, which is configured to connect to a main to substrate receiving interface 1126 of any one of the main modules 1120.

[0121] Returning to FIG. 9, method 900 proceeds to assemble each semiconductor processing tool (block 950) by connecting one of the main modules to one of the substrate transfer modules and one of the process modules, and also disposing one of the substrate receiving modules inside one of the main modules, where the semiconductor processing tools form a semiconductor manufacturing line. This assembly includes interconnecting various interfaces, as schematically shown in, for example, FIG. 11.

[0122] In some examples, (block 950) assembling each semiconductor processing tool 120 includes reconfiguring at least one semiconductor processing tool 120 by disconnecting at least one main module 1120 from at least one process module 1130 and reconnecting another process module 1130 to one of the main modules 1120. This reconfiguration can change the functionality of the semiconductor processing tool 120. In some examples, reconfiguring at least one of the semiconductor processing tools 120 includes disconnecting one of the main modules 1120 from at least one substrate receiving module 1140 and reconnecting another substrate receiving module 1140 to one of the main modules 1120. In some examples, the substrate receiving module 1140 supports various operations of the process module 1130, such as heating / cooling of the substrate, application of RF bias to the substrate, and measurement of various substrate parameters. In some examples, the substrate receiving module 1140 is configured to lift the semiconductor substrate 190 to an adjustable height within the process module 1130.

[0123] In some examples, (block 950) assembling each semiconductor process tool 120, or more generally, method 900 further includes (a) placing two or more semiconductor process tools 120 on the bench top 112 of the tool compartment 110 (e.g., as shown in FIG. 1A), (b) fluidly coupling two or more semiconductor process tools 120 to one or more support modules 130 including one or more selected from the group consisting of a vacuum pump, a water cooling device, and a gas storage device, and (c) connecting two or more semiconductor process tools 120 to external connections selected from the group consisting of an exhaust connection, a power connection, and a compressed gas connection.

[0124] In some examples, method 900 also includes various optional operations such as (block 960) testing a plurality of semiconductor process tools, (block 970) manufacturing one or more semiconductor test devices using a semiconductor manufacturing line, and / or (block 980) shipping the semiconductor manufacturing line to a semiconductor device manufacturer (e.g., the manufacturer that provided the original device specifications).

[0125] Overall, as shown in FIG. 10A, the semiconductor tool library is composed of a plurality of types of main modules, a plurality of types of substrate transfer modules, a plurality of types of process modules, and a plurality of types of substrate receiving modules from the semiconductor process library for each semiconductor process tool and based on the configuration of the semiconductor process tool. As described above, any one of the main modules in the semiconductor tool library is configured to connect to any one of the substrate transfer modules and any one of the process modules, and is further configured to receive any one of the substrate receiving modules. Conclusion

[0126] The foregoing concepts have been described in some detail for ease of understanding, but it is clear that certain changes and modifications can be made within the scope of the appended claims. It should be noted that there are many alternative ways to implement the processes, systems, and devices. Therefore, this example should be considered illustrative and not limiting.

Claims

1. A tool compartment having a bench top, One or more semiconductor process tools disposed within the tool compartment on the bench top, each selected from the group consisting of a lithography tool, a photoresist process tool, a heat treatment tool, a chemical vapor deposition tool, a sputtering tool, an atomic layer deposition tool, an ion etching tool, and a wafer dicing tool, one or more semiconductor process tools; One or more support tools fluidly coupled to each of the one or more semiconductor process tools, all disposed under the bench top, one or more support modules comprising one or more selected from the group consisting of a vacuum pump, a water cooling device, and a gas storage device; An external connection selected from the group consisting of an exhaust connection, a power connection, and a compressed gas connection, wherein only a combination of three or fewer external connections and one or more support modules is configured to support all operations of each of the one or more semiconductor process tools of the integrated bench top semiconductor process cell, an external connection; An integrated bench top semiconductor process cell for processing a semiconductor substrate comprising the same.

2. The integrated bench top semiconductor process cell has an occupied area of less than 3 square meters, The integrated bench top semiconductor process cell according to claim 1.

3. One or more support modules comprise a compressor for supplying compressed gas to one or more semiconductor process tools, The integrated bench top semiconductor process cell according to claim 1.

4. The integrated bench top semiconductor process cell uses only two or fewer external connections to support all operations of at least one of the one or more semiconductor process tools, The two or fewer external connections include an exhaust connection and a power connection, The integrated bench top semiconductor process cell according to claim 1.

5. The gas storage device comprises all process gases required for the operation of one or more semiconductor process tools, The integrated bench top semiconductor process cell according to claim 1.

6. The gas storage device comprises at least one or more gas storage containers, The integrated bench top semiconductor process cell according to claim 1.

7. The integrated bench top semiconductor process cell has a maximum power consumption of less than 100 kW, The integrated bench top semiconductor process cell according to claim 1.

8. Further comprising a plurality of controllers disposed near one or more semiconductor process tools, the plurality of controllers comprising one or more mass flow controllers that fluidly couple the one or more semiconductor process tools to a gas storage device The integrated benchtop semiconductor process cell according to claim 1.

9. The plurality of controllers further comprise one or more RF impedance matchers for one or more of a DC power supply, an RF power supply, a phase shifter, and a heater power supply. The integrated benchtop semiconductor process cell according to claim 8.

10. Further comprising one or more control modules communicatively connected to the plurality of controllers and including a series of instructions for operating the plurality of controllers. The integrated benchtop semiconductor process cell according to claim 8.

11. Some of the plurality of controllers are disposed above the benchtop and the semiconductor process tools. The integrated benchtop semiconductor process cell according to claim 8.

12. Further comprising a filter unit configured to flow filtered air into the tool compartment, thereby reducing contamination within the tool compartment surrounding the one or more semiconductor process tools. The integrated benchtop semiconductor process cell according to claim 1.

13. The tool compartment includes a front opening for accessing the benchtop. The integrated benchtop semiconductor process cell according to claim 1.

14. The tool compartment includes a sealed front panel including a plurality of gloves to isolate the benchtop from the environment. The integrated benchtop semiconductor process cell includes a substrate transfer module for isolated transfer between the tool compartment and the environment. The integrated benchtop semiconductor process cell according to claim 1.

15. The diameter of the semiconductor substrate is less than 100 millimeters. The integrated benchtop semiconductor process cell according to claim 1.

16. Each semiconductor process tool includes a main module, a substrate transfer module, a process module, and a substrate receiver module. The main module is hermetically and removably coupled to each of the substrate transfer module, the process module, and the substrate receiving module. The substrate transfer module protrudes into the main module and is configured to place a semiconductor substrate on the substrate receiving module. The substrate receiving module is configured to lift the semiconductor substrate to an adjustable height within the process module. The integrated benchtop semiconductor process cell according to claim 1.

17. The main modules of each semiconductor process tool are the same. At least the process modules of the semiconductor process tools are different. The integrated benchtop semiconductor process cell according to claim 16.

18. The substrate receiving module is configured to perform at least one function selected from the group consisting of (a) applying heating or cooling to the semiconductor substrate, (b) flowing gas over the back surface of the semiconductor substrate, (c) applying an RF bias to the semiconductor substrate, and (d) measuring parameters on or near the semiconductor substrate. The integrated benchtop semiconductor process cell according to claim 16.

19. Each semiconductor process tool further comprises a flow control module fluidly coupled to a vacuum pump. The integrated benchtop semiconductor process cell according to claim 16.

20. The substrate transfer module of each semiconductor process tool is fluidly coupled to a vacuum pump. The integrated benchtop semiconductor process cell according to claim 16.

21. The process module of each semiconductor process tool is fluidly coupled to a gas storage device. The integrated benchtop semiconductor process cell according to claim 16.

22. An integrated benchtop semiconductor process cell, comprising an additional integrated benchtop semiconductor process cell, wherein the integrated benchtop semiconductor process cell and the additional integrated benchtop semiconductor process cell each comprise a tool compartment with a benchtop, and one or more semiconductor process tools disposed within the tool compartment on the benchtop, each selected from the group consisting of a lithography tool, a photoresist process tool, a heat treatment tool, a chemical vapor deposition tool, a sputtering tool, an atomic layer deposition tool, an ion etching tool, and a wafer dicing tool. One or more support tools fluidly coupled to each of one or more semiconductor process tools and disposed under a bench top, comprising one or more selected from the group consisting of a vacuum pump, a water cooling device, and a gas storage device, one or more support modules; Comprising; At least one of one or more support modules of an integrated bench top semiconductor process cell is fluidly coupled to at least one of one or more semiconductor process tools of an additional integrated bench top semiconductor process cell; A cell-based semiconductor manufacturing factory.

23. At least one of one or more support modules of an integrated bench top semiconductor process cell fluidly coupled to at least one of one or more semiconductor process tools of an additional integrated bench top semiconductor process cell is a vacuum pump; The cell-based semiconductor manufacturing factory according to claim 22.

24. A method of constructing a semiconductor manufacturing line comprising semiconductor process tools using a semiconductor tool library, Determining the configuration of each semiconductor process tool based on corresponding semiconductor operations selected for the manufacture of semiconductor devices; Selecting, from a semiconductor tool library, one main module, one substrate transfer module, one process module, and one substrate receiving module for each semiconductor process tool based on the configuration of each semiconductor process tool; Connecting one main module to one substrate transfer module and one process module, and disposing one substrate receiving module inside one main module to assemble each semiconductor process tool, whereby the semiconductor process tools form a semiconductor manufacturing line; Method.

25. The semiconductor operation is selected from the group consisting of lithography, photoresist process, heat treatment, chemical vapor deposition, sputtering, atomic layer deposition, ion etching, and wafer dicing; The method according to claim 24.

26. Connecting one main module to one substrate transfer module and one process module includes forming a sealed temporary connection between one main module and each of one substrate transfer module and one process module; The method according to claim 24.

27. In a semiconductor tool library, each main module is configured to be connected to any one of the substrate transfer modules and separately to any one of the process modules. The method according to claim 24. **Claim 28** The different process modules are configured to perform different semiconductor operations. The method according to claim 24. **Claim 29** A semiconductor manufacturing line comprises at least three semiconductor process tools having different configurations and configured to perform different semiconductor operations. The method according to claim 24. **Claim 30** A semiconductor manufacturing line comprises an integrated benchtop semiconductor process cell including a tool compartment, one or more support modules, and external connection parts. The method further includes: (a) arranging two or more semiconductor process tools on the benchtop of the tool compartment; (b) fluidly coupling two or more semiconductor process tools to one or more support modules including one or more selected from the group consisting of a vacuum pump, a water cooling device, and a gas storage device; and (c) connecting two or more semiconductor process tools to an external connection part selected from the group consisting of an exhaust connection part, a power connection part, and a compressed gas connection part. The method according to claim 24. **Claim 31** A semiconductor tool library includes, for each of the semiconductor process tools and based on the configuration of each of the semiconductor process tools, a plurality of types of main modules, a plurality of types of substrate transfer modules, a plurality of types of processing modules, and a plurality of types of substrate receiving modules from a semiconductor process library. Any one of the main modules in the semiconductor tool library is configured to connect to any one of the substrate transfer modules and any one of the process modules, and is further configured to receive any one of the substrate receiving modules. The method according to claim 24. **Claim 32** The method further includes reconfiguring at least one semiconductor process tool by disconnecting one of the main modules from at least one of the process modules and reconnecting one of the different process modules to one of the main modules. The method according to claim 24. **Claim 33** At least one type of main module, At least one type of substrate transfer module, Comprising a plurality of types of process modules and a plurality of types of substrate receiving modules, any one of the main modules in the semiconductor tool library is configured to be hermetically coupled to any one of the substrate transfer modules and any one of the process modules, and is further configured to receive any one of the substrate receiving modules to form one of the semiconductor process tools on the semiconductor manufacturing line. A semiconductor tool library for constructing a semiconductor manufacturing line for processing semiconductor substrates.

34. Each of the plurality of types of process modules is selected from the group consisting of a lithography module, a photoresist processing module, a heat treatment module, a chemical vapor deposition module, a sputtering module, an atomic layer deposition module, an ion etching module, and a wafer dicing module. The semiconductor tool library according to claim 33.

35. At least one type of main module comprises a plurality of types of main modules. The semiconductor tool library according to claim 33.

36. At least one type of main module comprises a plurality of types of substrate transfer modules. The semiconductor tool library according to claim 33.

37. The diameter of the semiconductor substrate is less than 100 millimeters. The semiconductor tool library according to claim 33.

38. The installation area of each semiconductor process tool is less than 0.5 meter × 0.5 meter, and the height is at most 1.5 meters. The semiconductor tool library according to claim 33.

39. The weight of each semiconductor process tool is from 20 kg to 60 kg. The semiconductor tool library according to claim 33.

40. The semiconductor tool library further comprises at least one type of flow control module. Any one of the main modules in the semiconductor tool library is configured to be hermetically coupled to any one of the flow control modules. The semiconductor tool library according to claim 33.

41. Each substrate receiving module is configured to perform at least one function selected from the group consisting of (a) applying heat to the semiconductor substrate, (b) flowing gas on the back surface of the semiconductor substrate, and (c) applying an RF bias to the semiconductor substrate. The semiconductor tool library according to claim 33.

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