Plasma-resistant glass, chamber internal parts for semiconductor manufacturing process, and manufacturing method thereof

Abstract

The present invention relates to plasma-resistant glass, chamber interior parts for semiconductor manufacturing processes, and methods for manufacturing the same. Specifically, the present invention relates to plasma-resistant glass, chamber interior parts for semiconductor manufacturing processes, and methods for manufacturing the same, which have a low melting temperature and a reduced thermal expansion coefficient by adjusting the content of plasma-resistant glass components, thereby preventing damage due to thermal shock during high-temperature use, and which have improved light transmittance and durability and an appropriate dielectric constant.

Description

[Technical Field]

[0001] The present invention claims the full benefit of the filing date of Korean Patent Application No. 10-2022-0131086, filed with the Korean Intellectual Property Office on October 13, 2022, the entire contents of which are incorporated herein by reference.

[0002] The present invention relates to plasma-resistant glass, chamber interior parts for semiconductor manufacturing processes, and methods for manufacturing the same. Specifically, the present invention relates to plasma-resistant glass, chamber interior parts for semiconductor manufacturing processes, and methods for manufacturing the same, which have a low melting temperature and a reduced thermal expansion coefficient by adjusting the content of plasma-resistant glass components, thereby preventing damage due to thermal shock during high-temperature use, and which have improved light transmittance and durability and an appropriate dielectric constant. [Background technology]

[0003] Plasma etching processes are used in the manufacture of semiconductors and / or displays. Recently, the application of nano-processing has made etching more difficult, and corrosion-resistant oxide ceramics such as alumina (Al2O3) and yttria (Y2O3) are mainly used for the internal parts of the process chamber exposed to the high-density plasma environment.

[0004] When polycrystalline materials are exposed to a high-density plasma etching environment using fluorine-based gases for a long period of time, particles are shed due to localized erosion, which increases the likelihood of contaminant particles being generated. This can cause defects in semiconductors / displays and negatively impact production yields. Additionally, oxide-based ceramic materials have the problem of low workability due to their high melting temperature.

[0005] Therefore, it is necessary to develop a technology that can prevent thermal shock damage of existing plasma-resistant glass while having a low melting temperature, and can adjust the dielectric constant depending on the situation to achieve a dielectric constant within an appropriate range. Summary of the Invention [Problem to be solved by the invention]

[0006] The technical problem to be solved by the present invention is to provide a plasma-resistant glass that has excellent resistance to plasma inside a chamber used in a semiconductor manufacturing process, excellent heat resistance under high temperature conditions to prevent damage to components used inside the chamber, can achieve a low melting temperature, and has a dielectric constant in an appropriate range, a chamber internal component for a semiconductor manufacturing process, and a method for manufacturing the same.

[0007] However, the problems to be solved by the present invention are not limited to those described above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0008] One embodiment of the present invention provides a plasma-resistant glass having a dielectric constant of 6.65 to 8.10, which is formed by melting a composition containing 20% ​​by weight to 60% by weight of SiO, 10% by weight to 30% by weight of AlO, 0.01% by weight to 35% by weight of CaO, and 0.01% by weight to 30% by weight of MgO.

[0009] According to one embodiment of the present invention, the total content of the CaO and the MgO may be 15% by weight or more and 35% by weight or less.

[0010] According to one embodiment of the present invention, the weight ratio of the SiO2 to the Al2O3 may be 0.5:1 to 6.0:1.

[0011] According to one embodiment of the present invention, the SiO2 content may be 40% by weight or more and 55% by weight or less, the Al2O3 content may be 15% by weight or more and 30% by weight or less, the CaO content may be 1% by weight or more and 35% by weight or less, the MgO content may be 1% by weight or more and 25% by weight or less, and the dielectric constant may be 6.75 or more and 7.60 or less.

[0012] According to one embodiment of the present invention, the light transmittance may be 80% or more and 100% or less.

[0013] According to one embodiment of the present invention, the Vickers hardness may be 650 HV or more and 1,000 HV or less.

[0014] According to one embodiment of the present invention, the glass transition temperature may be 600°C or more and 850°C or less.

[0015] According to one embodiment of the present invention, the thermal expansion coefficient is 4.0×10 -6 m / (m℃) or more 6.0×10 -6 m / (m°C) or less.

[0016] According to one embodiment of the present invention, the etching rate by a mixed plasma of fluorine and argon (Ar) may be more than 0 nm / min and 20 nm / min or less.

[0017] According to one embodiment of the present invention, the melting point may be 1,500°C or higher and 1,750°C or lower.

[0018] One embodiment of the present invention provides a chamber internal part for a semiconductor manufacturing process, which is made of the plasma-resistant glass.

[0019] According to one embodiment of the present invention, the internal part may be any one of a focus ring, an edge ring, a cover ring, a ring shower, an insulator, an EPD window, an electrode, a view port, an inner shutter, an electrostatic chuck, a heater, a chamber liner, a shower head, a CVD (Chemical Vapor Deposition) boat, a wall liner, a shield, a cold pad, a source head, an outer liner, a deposition shield, an upper liner, an exhaust plate, and a mask frame.

[0020] One embodiment of the present invention provides a method for producing plasma-resistant glass, comprising the steps of melting a composition containing 20 wt % to 60 wt % SiO2, 10 wt % to 30 wt % Al2O3, 0.01 wt % to 35 wt % CaO, and 0.01 wt % to 30 wt % MgO, and cooling the molten composition.

[0021] According to one embodiment of the present invention, the melting temperature in the step of melting the composition may be 1,400°C or higher and 1,700°C or lower.

[0022] One embodiment of the present invention provides a method for manufacturing a chamber internal component for a semiconductor manufacturing process, the method comprising the steps of melting the plasma-resistant glass, pouring the molten plasma-resistant glass into a mold, and annealing the poured plasma-resistant glass.

[0023] According to one embodiment of the present invention, the melting temperature in the step of melting the plasma-resistant glass may be 1,500°C or higher and 1,750°C or lower.

[0024] According to one embodiment of the present invention, the temperature of the annealing step may be 400°C or higher and 900°C or lower. [Effects of the Invention]

[0025] The plasma-resistant glass according to one embodiment of the present invention may have a dielectric constant within a specific range, and may have a low melting temperature, improving processability and facilitating the manufacture of chamber interior parts for semiconductor manufacturing processes.

[0026] The plasma-resistant glass according to one embodiment of the present invention exhibits low thermal expansion coefficient characteristics, and therefore can prevent damage due to thermal shock in a high-temperature atmosphere.

[0027] The plasma-resistant glass according to one embodiment of the present invention has improved light transmittance and improved hardness, resulting in improved mechanical properties, and therefore, improved durability in a plasma etching environment.

[0028] According to an embodiment of the present invention, an internal chamber part for a semiconductor manufacturing process can achieve a low etching rate with respect to plasma, thereby extending the usable life of the semiconductor manufacturing process, and can prevent damage to the part due to thermal shock, thereby improving durability.

[0029] A method for producing plasma-resistant glass according to one embodiment of the present invention can easily produce plasma-resistant glass and prevent damage due to thermal shock in a high-temperature atmosphere.

[0030] A method for manufacturing chamber internal parts for a semiconductor manufacturing process according to one embodiment of the present invention can manufacture parts having various shapes, prevent damage due to thermal shock in a high-temperature atmosphere, and easily manufacture parts.

[0031] The effects of the present invention are not limited to those described above, and effects not mentioned will be clearly understood by those skilled in the art from the present specification and the accompanying drawings. [Brief explanation of the drawings]

[0032] [Figure 1] 1 is a flowchart of a method for manufacturing plasma-resistant glass according to one embodiment of the present invention. [Figure 2] 1 is a flowchart of a method for manufacturing chamber internals for a semiconductor manufacturing process according to one embodiment of the present invention. [Figure 3] 1 shows photographs of plasma-resistant glasses of Examples 1 to 5, which are embodiments of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0033] Throughout this specification, when a part is described as "comprising" a certain element, this means that it can further include other elements, but not to the exclusion of other elements, unless otherwise specified.

[0034] Throughout this specification, "A and / or B" means "A and B, or A or B."

[0035] The present invention will be described in more detail below.

[0036] One embodiment of the present invention provides a plasma-resistant glass having a dielectric constant of 6.65 to 8.10, which is formed by melting a composition containing 20% ​​by weight to 60% by weight of SiO, 10% by weight to 30% by weight of AlO, 0.01% by weight to 35% by weight of CaO, and 0.01% by weight to 30% by weight of MgO.

[0037] The plasma-resistant glass according to one embodiment of the present invention may have a dielectric constant within a specific range, realize a low melting temperature to improve processability, and facilitate the manufacture of chamber interior parts for semiconductor manufacturing processes. It also exhibits a low thermal expansion coefficient, thereby preventing damage due to thermal shock in high-temperature atmospheres. It also has improved light transmittance and hardness, thereby improving mechanical properties, thereby improving durability in plasma etching environments.

[0038] According to one embodiment of the present invention, the composition contains 20 to 60 wt% SiO2. Specifically, the SiO2 content in the composition may be 21 to 59 wt%, 22 to 58 wt%, 23 to 57 wt%, 24 to 56 wt%, 25 to 55 wt%, 26 to 54 wt%, 27 to 53 wt%, 28 to 52 wt%, 29 to 51 wt%, 30 to 50 wt%, 31 to 49 wt%, 32 to 48 wt%, 33 to 47 wt%, 34 to 46 wt%, 35 to 45 wt%, 36 to 44 wt%, 37 to 43 wt%, 38 to 42 wt%, or 39 to 41 wt%. As described above, by including SiO2 and adjusting the content of SiO2 within the above range, the basic physical properties of the plasma-resistant glass can be ensured, durability and reliability can be improved, and the plasma-resistant glass can be easily processed, thereby reducing the production costs of parts.

[0039] According to one embodiment of the present invention, the composition comprises 10 to 30 wt% Al2O3. Specifically, the Al2O3 content in the composition may be 11 to 39 wt%, 12 to 38 wt%, 13 to 37 wt%, 14 to 36 wt%, 15 to 35 wt%, 16 to 34 wt%, 17 to 33 wt%, 18 to 32 wt%, 19 to 31 wt%, 20 to 30 wt%, 21 to 29 wt%, 22 to 28 wt%, 23 to 27 wt%, or 24 to 26 wt%. As described above, by including Al2O3 and adjusting the content of Al2O3 within the above range, outgassing can be prevented, particle generation can be suppressed, and the wear resistance of chamber internal parts for semiconductor manufacturing processes can be improved.

[0040] According to one embodiment of the present invention, the composition includes 0.01 to 35 wt% CaO. Specifically, the CaO content in the composition may be 1 to 34 wt%, 2 to 33 wt%, 3 to 32 wt%, 4 to 31 wt%, 5 to 30 wt%, 6 to 29 wt%, 7 to 28 wt%, 8 to 27 wt%, 9 to 26 wt%, 10 to 25 wt%, 11 to 24 wt%, 12 to 23 wt%, 13 to 22 wt%, 14 to 21 wt%, 15 to 20 wt%, 16 to 19 wt%, or 17 to 18 wt%. As described above, by including CaO and adjusting the CaO content within the above range, the thermal expansion coefficient and glass transition temperature of the glass can be reduced, thereby minimizing thermal shock at high temperatures, improving the durability of chamber internal parts for semiconductor manufacturing processes, and realizing a dielectric constant within an appropriate range.

[0041] According to one embodiment of the present invention, the composition contains 0.01 to 30 wt% MgO. Specifically, the content of MgO in the plasma-resistant glass composition may be 1 to 29 wt%, 2 to 28 wt%, 3 to 27 wt%, 4 to 26 wt%, 5 to 25 wt%, 6 to 24 wt%, 7 to 23 wt%, 8 to 22 wt%, 9 to 21 wt%, 10 to 20 wt%, 11 to 19 wt%, 12 to 18 wt%, 13 to 17 wt%, or 14 to 16 wt%. As described above, by including MgO and adjusting the content of MgO within the above range, the thermal expansion coefficient and glass transition temperature of the glass can be reduced, thereby minimizing thermal shock at high temperatures and improving the durability of chamber internal parts for semiconductor manufacturing processes, and the dielectric constant can be set within an appropriate range.

[0042] According to one embodiment of the present invention, the plasma-resistant glass is formed by melting the composition. Specifically, each component contained in the composition may be contained in the plasma-resistant glass. As described above, by using the plasma-resistant glass formed by melting the composition, each component can be uniformly distributed throughout the entire region of the plasma-resistant glass.

[0043] According to one embodiment of the present invention, the plasma-resistant glass has a dielectric constant of 6.65 or more and 8.10 or less. Specifically, the plasma-resistant glass may have a dielectric constant of 6.70 or more and 8.05 or less, 6.75 or more and 8.00 or less, 6.80 or more and 7.95 or less, 6.85 or more and 7.90 or less, 6.90 or more and 7.85 or less, 6.95 or more and 7.80 or less, 7.00 or more and 7.75 or less, 7.05 or more and 7.70 or less, 7.10 or more and 7.65 or less, 7.15 or more and 7.60 or less, 7.20 or more and 7.55 or less, 7.25 or more and 7.50 or less, 7.30 or more and 7.45 or less, or 7.35 or more and 7.40 or less. More specifically, the plasma-resistant glass may have a dielectric constant of 6.79 to 6.99, 6.79 to 7.19, 6.79 to 7.39, 6.79 to 7.59, 6.99 to 7.19, 6.99 to 7.39, 6.99 to 7.59, 7.19 to 7.39, 7.19 to 7.59, or 7.39 to 7.59. Methods for measuring the dielectric constant include the capacitance method using an LCR meter, the reflection coefficient method using a network analyzer, and the resonant frequency method. The capacitance method using an LCR meter, as an example of a method for measuring the dielectric constant, is primarily used to measure low-frequency characteristics (kHz, MHz), and the dielectric constant can be determined from the physical size and capacitance of the capacitor. By achieving the dielectric constant of the plasma-resistant glass within the above range, it is possible to minimize thermal shock at high temperatures, improve the durability of chamber internal parts for semiconductor manufacturing processes, and improve optical transparency and durability.

[0044] According to one embodiment of the present invention, the total content of the CaO and the MgO may be 15 wt% to 35 wt%. Specifically, the total content of the CaO and the MgO may be 16 wt% to 34 wt%, 17 wt% to 33 wt%, 18 wt% to 32 wt%, 19 wt% to 31 wt%, 20 wt% to 30 wt%, 21 wt% to 29 wt%, 22 wt% to 28 wt%, 23 wt% to 27 wt%, or 24 wt% to 26 wt%. Adjusting the total content of the CaO and the MgO within the above ranges minimizes thermal shock at high temperatures, improves the durability of chamber internal parts for semiconductor manufacturing processes, and improves light transmittance and durability.

[0045] According to one embodiment of the present invention, the weight ratio of the SiO2 to the Al2O3 may be 0.5:1 to 6.0:1. Specifically, the weight ratio of the SiO2 to the Al2O3 may be 0.6:1 to 5.9:1, 0.7:1 to 5.8:1, 0.8:1 to 5.7:1, 0.9:1 to 5.6:1, 1.0:1 to 5.5:1, 1.1:1 to 5.4:1, 1.2:1 to 5.3:1, 1.3:1 to 5.4:1, 1.4:1 to 5.3:1, 1.5:1 to 5.2:1, 1.6:1 to 5.1:1, 1.7:1 to 5.0:1, 1.8:1 to 4.9:1, 1.9:1 to 5.8:1, 1.9:1 to 5.6 ... The weight ratio of SiO2 to Al2O3 may be 2.0:1 to 4.7:1, 2.1:1 to 4.6:1, 2.2:1 to 4.5:1, 2.3:1 to 4.4:1, 2.4:1 to 4.3:1, 2.5:1 to 4.2:1, 2.6:1 to 4.1:1, 2.7:1 to 4.0:1, 2.8:1 to 3.9:1, 2.9:1 to 3.8:1, 3.0:1 to 3.7:1, 3.1:1 to 3.6:1, 3.2:1 to 3.5:1, or 3.3:1 to 3.4:1. Adjusting the weight ratio of SiO2 to Al2O3 within the above ranges can improve the abrasion resistance of the plasma-resistant glass while simultaneously making it easy to process.

[0046] According to one embodiment of the present invention, the SiO2 content may be 40 wt% to 55 wt%, the Al2O3 content may be 15 wt% to 30 wt%, the CaO content may be 1 wt% to 35 wt%, the MgO content may be 1 wt% to 25 wt%, and the dielectric constant may be 6.75 to 7.60. By adjusting the contents of the compositions used to produce the plasma-resistant glass within the above ranges, a specific range of dielectric constant can be achieved, and the melting temperature can be lowered to improve processability, making it possible to easily produce chamber interior parts for semiconductor manufacturing processes.

[0047] According to one embodiment of the present invention, the composition may contain no other components except for SiO2, Al2O3, CaO, MgO, and inevitable impurities. By adjusting the components of the composition as described above, the desired dielectric constant can be precisely adjusted.

[0048] According to one embodiment of the present invention, the light transmittance may be 80% or more and 100% or less. Specifically, the light transmittance of the plasma-resistant glass may be 82% or more and 98% or less, 85% or more and 95% or less, or 87% or more and 92% or less. In this specification, "light transmittance" may refer to a value measured using a haze meter (JCH-300S, Oceanoptics). By achieving a light transmittance of the plasma-resistant glass within the above-mentioned range, it is possible to improve the melting degree of the plasma-resistant glass and simultaneously achieve high vitrification.

[0049] According to one embodiment of the present invention, the Vickers hardness may be 650 HV or more and 1,000 HV or less. The Vickers hardness of the plasma-resistant glass may be 670 HV or more and 980 HV or less, 650 HV or more and 950 HV or less, 680 HV or more and 930 HV or less, 700 HV or more and 900 HV or less, 720 HV or more and 880 HV or less, 750 HV or more and 850 HV or less, or 780 HV or more and 820 HV or less. In this specification, "Vickers hardness" may refer to a value measured using a Vickers hardness tester (Helmut Fischer, FISCHERSCOPE HM-2000). By achieving a Vickers hardness of the plasma-resistant glass within the above-mentioned range, mechanical properties are improved, and durability in a plasma etching environment can be improved.

[0050] According to one embodiment of the present invention, the glass transition temperature may be 600° C. or more and 850° C. or less. Specifically, the glass transition temperature of the plasma-resistant glass may be 620° C. or more and 830° C. or less, 650° C. or more and 800° C. or less, 670° C. or more and 780° C. or less, or 700° C. or more and 750° C. or less. By adjusting the glass transition temperature of the plasma-resistant glass within the above range, it is possible to minimize thermal shock at high temperatures of components inside a chamber for semiconductor manufacturing processes and improve durability.

[0051] According to one embodiment of the present invention, the thermal expansion coefficient is 4.0×10 -6 m / (m℃) or more 6.0×10 -6 Specifically, the thermal expansion coefficient of the plasma-resistant glass may be 4.1×10 -6 m / (m℃) or more 5.9×10 -6 m / (m℃) or less, 4.2×10 -6 m / (m℃) or more 5.8×10 -6 m / (m℃) or less, 4.3×10 -6 m / (m℃) or more 5.7×10 -6 m / (m℃) or less, 4.4×10 -6 m / (m℃) or more 5.6×10 -6 m / (m℃) or less, 4.5×10 -6 m / (m℃) or more 5.5×10-6 m / (m℃) or less, 4.6×10 -6 m / (m℃) or more 5.4×10 -6 m / (m℃) or less, 4.7×10 -6 m / (m℃) or more 5.3×10 -6 m / (m℃) or less, 4.8×10 -6 m / (m℃) or more 5.2×10 -6 m / (m℃) or less or 4.9×10 -6 m / (m℃) or more 5.1×10 -6 m / (m° C.) or less. By adjusting the thermal expansion coefficient of the plasma-resistant glass within the above range, damage to components due to thermal shock can be prevented, and durability can be improved.

[0052] According to one embodiment of the present invention, the etching rate with a mixture plasma of fluorine and argon (Ar) may be greater than 0 nm / min and less than 20 nm / min. Specifically, the etching rate with a mixture plasma of fluorine and argon (Ar) may be greater than 0 nm / min and less than 18 nm / min, 1 nm / min to 16 nm / min, 2 nm / min to 15 nm / min, 3 nm / min to 14 nm / min, 4 nm / min to 13 nm / min, 5 nm / min to 12 nm / min, 6 nm / min to 11 nm / min, or 7 nm / min to 10 nm / min. By achieving the etching rate with the mixture plasma of fluorine and argon (Ar) within the above range, chamber internal parts for the semiconductor manufacturing process can achieve a low etching rate with plasma, thereby extending the service life of the semiconductor manufacturing process.

[0053] According to one embodiment of the present invention, the etching step of the plasma-resistant glass may be 150 nm to 400 nm. Specifically, the etching step of the plasma-resistant glass may be 160 nm to 390 nm, 170 nm to 380 nm, 180 nm to 370 nm, or 190 nm to 360 nm. By achieving an etching step of the plasma-resistant glass within the above range, the chamber interior parts for the semiconductor manufacturing process can achieve a low etching rate with respect to plasma, thereby extending the service life of the semiconductor manufacturing process.

[0054] According to one embodiment of the present invention, the melting point may be 1,500°C or higher and 1,750°C or lower. In this specification, the melting point may refer to the melting temperature. Specifically, the plasma-resistant glass may have a melting point of 1,560°C or higher and 1,740°C or lower, 1,570°C or higher and 1,730°C or lower, 1,580°C or higher and 1,720°C or lower, 1,590°C or higher and 1,710°C or lower, 1,600°C or higher and 1,700°C or lower, 1,610°C or higher and 1,690°C or lower, 1,620°C or higher and 1,680°C or lower, 1,630°C or higher and 1,670°C or lower, or 1,640°C or higher and 1,660°C or lower. By adjusting the melting point of the plasma-resistant glass within the above-described range, the viscosity of the molten plasma-resistant glass can be adjusted, thereby improving the workability of processes using the plasma-resistant glass.

[0055] According to one embodiment of the present invention, the plasma-resistant glass may be amorphous. As described above, by realizing the structure of the plasma-resistant glass as amorphous, it is possible to improve the durability of a part using the plasma-resistant glass and at the same time reduce the etching rate by plasma.

[0056] One embodiment of the present invention provides a chamber internal part for a semiconductor manufacturing process, which is made of the plasma-resistant glass.

[0057] According to an embodiment of the present invention, an internal chamber part for a semiconductor manufacturing process can achieve a low etching rate with respect to plasma, thereby extending the usable life of the semiconductor manufacturing process, and can prevent damage to the part due to thermal shock, thereby improving durability.

[0058] According to one embodiment of the present invention, the internal part may be any one of a focus ring, an edge ring, a cover ring, a ring shower, an insulator, an EPD window, an electrode, a view port, an inner shutter, an electrostatic chuck, a heater, a chamber liner, a shower head, a CVD (Chemical Vapor Deposition) boat, a wall liner, a shield, a cold pad, a source head, an outer liner, a deposition shield, an upper liner, an exhaust plate, and a mask frame. By using the above-described internal components, the resistance to plasma in the semiconductor manufacturing process can be improved, extending the usable time and minimizing the cost of semiconductor manufacturing.

[0059] One embodiment of the present invention provides a method for producing plasma-resistant glass, comprising the steps of melting a composition containing 20 wt % to 60 wt % SiO2, 10 wt % to 30 wt % Al2O3, 0.01 wt % to 35 wt % CaO, and 0.01 wt % to 30 wt % MgO, and cooling the molten composition.

[0060] A method for producing plasma-resistant glass according to one embodiment of the present invention can easily produce plasma-resistant glass and prevent damage due to thermal shock in a high-temperature atmosphere. By producing glass with higher hardness than existing glasses, mechanical properties are improved, thereby improving durability in a plasma etching environment.

[0061] In the method for producing plasma-resistant glass according to one embodiment of the present invention, the description of the same content as in the method for producing plasma-resistant glass will be omitted.

[0062] According to one embodiment of the present invention, a method includes step S11 of melting a composition containing 20% ​​to 60% by weight of SiO2, 10% to 30% by weight of Al2O3, 0.01% to 35% by weight of CaO, and 0.01% to 30% by weight of MgO. By adjusting the components of the plasma-resistant glass from the above and adjusting the contents of the components, it is possible to appropriately achieve the dielectric constant of the plasma-resistant glass, prevent damage to the plasma-resistant glass due to thermal shock in a high-temperature atmosphere, achieve a low melting temperature, and improve light transmittance and durability.

[0063] According to one embodiment of the present invention, the melting step may include melting the composition in a platinum crucible. By melting the composition in the platinum crucible as described above, components eluted from the crucible can be minimized and the physical properties of the plasma-resistant glass can be achieved.

[0064] According to one embodiment of the present invention, the method includes a step S13 of cooling the molten glass composition. By including the step of cooling the molten glass composition as described above, it is possible to adjust the crystallization of the plasma-resistant glass and prevent breakage due to a sudden thermal change.

[0065] According to one embodiment of the present invention, the temperature of the cooling step may be room temperature. By adjusting the temperature of the cooling step within the above-mentioned range, it is possible to adjust the crystallization of the plasma-resistant glass, and to facilitate melting during the manufacturing of the chamber internal parts for the semiconductor manufacturing process.

[0066] According to one embodiment of the present invention, the melting temperature in the step of melting the composition may be 1,400°C or higher and 1,700°C or lower. Specifically, the melting temperature in the step of melting the composition may be a melting point of 1,400°C or higher and 1,700°C or lower. In this specification, the melting point may mean a melting temperature. Specifically, the composition may have a melting point of 1,400°C or higher and 1,700°C or lower, 1,560°C or higher and 1,740°C or lower, 1,570°C or higher and 1,730°C or lower, 1,580°C or higher and 1,720°C or lower, 1,590°C or higher and 1,710°C or lower, 1,600°C or higher and 1,700°C or lower, 1,610°C or higher and 1,690°C or lower, 1,620°C or higher and 1,680°C or lower, 1,630°C or higher and 1,670°C or lower, or 1,640°C or higher and 1,660°C or lower. By adjusting the melting temperature in the step of melting the composition within the above-mentioned range, the viscosity of the molten composition can be adjusted, thereby improving the workability of the process of producing the plasma-resistant glass.

[0067] One embodiment of the present invention provides a method for manufacturing a chamber internal component for a semiconductor manufacturing process, the method comprising the steps of melting the plasma-resistant glass, pouring the molten plasma-resistant glass into a mold, and annealing the poured plasma-resistant glass.

[0068] A method for manufacturing chamber internal parts for a semiconductor manufacturing process according to one embodiment of the present invention can manufacture parts having various shapes, prevent damage due to thermal shock in a high-temperature atmosphere, and easily manufacture parts.

[0069] According to one embodiment of the present invention, the method for manufacturing a chamber internal part for a semiconductor manufacturing process includes a step of melting the plasma-resistant glass (S21). By including the step of melting the plasma-resistant glass as described above, the workability of the process for manufacturing the chamber internal part for the semiconductor manufacturing process is improved, and the plasma-resistant glass can be molded into various shapes by pouring the molten metal into a mold.

[0070] According to one embodiment of the present invention, the method for manufacturing a chamber internal part for a semiconductor manufacturing process includes step S23 of injecting the molten plasma-resistant glass into a mold. By injecting the molten plasma-resistant glass into a mold as described above, parts of various shapes can be manufactured.

[0071] According to one embodiment of the present invention, the mold may have any one of the following forms: a focus ring, an edge ring, a cover ring, a ring shower, an insulator, an EPD window, an electrode, a viewport, an inner shutter, an electrostatic chuck, a heater, a chamber liner, a shower head, a CVD (Chemical Vapor Deposition) boat, a wall liner, a shield, a cold pad, a source head, an outer liner, a deposition shield, an upper liner, an exhaust plate, and a mask frame. By implementing various mold shapes as described above, it is possible to easily realize part shapes and reduce manufacturing time.

[0072] According to one embodiment of the present invention, the method for manufacturing a chamber internal part for a semiconductor manufacturing process includes a step S25 of annealing the injected plasma-resistant glass. By including the step of annealing the injected plasma-resistant glass as described above, it is possible to minimize stress due to heat generated from the part manufactured by being injected into the mold, thereby improving the durability of the part and minimizing thermal shock at high temperatures.

[0073] According to one embodiment of the present invention, the melting temperature in the step of melting the plasma-resistant glass may be 1,500°C or higher and 1,750°C or lower. Specifically, the melting temperature in the step of melting the plasma-resistant glass may be 1,500°C or higher and 1,750°C or lower. In this specification, the melting point may mean the melting temperature. Specifically, the plasma-resistant glass may have a melting point of 1,560°C or higher and 1,740°C or lower, 1,570°C or higher and 1,730°C or lower, 1,580°C or higher and 1,720°C or lower, 1,590°C or higher and 1,710°C or lower, 1,600°C or higher and 1,700°C or lower, 1,610°C or higher and 1,690°C or lower, 1,620°C or higher and 1,680°C or lower, 1,630°C or higher and 1,670°C or lower, or 1,640°C or higher and 1,660°C or lower. By adjusting the melting temperature in the step of melting the plasma-resistant glass within the above-mentioned range, the viscosity of the molten plasma-resistant glass can be adjusted, thereby improving workability.

[0074] According to one embodiment of the present invention, the temperature of the annealing step may be 400° C. to 900° C. Specifically, the temperature of the annealing step may be 430° C. to 890° C., 450° C. to 880° C., 470° C. to 870° C., 500° C. to 860° C., 550° C. to 850° C., 560° C. to 840° C., 570° C. to 830° C., 580° C. to 820° C., 590° C. to 810° C., 600° C. to 800° C., 610° C. to 790° C., 620° C. to 780° C., 630° C. to 770° C., 640° C. to 760° C., 650° C. to 750° C., 660° C. to 740° C., 670° C. to 730° C., 680° C. to 720° C., or 690° C. to 710° C. By adjusting the temperature of the annealing step within the above range, thermal stress formed in the internal components of the chamber for the semiconductor manufacturing process can be reduced, and thermal shock at high temperatures can be minimized, thereby improving the durability of the components.

[0075] According to one embodiment of the present invention, a step S27 of processing a precursor of a chamber internal part for a semiconductor manufacturing process manufactured from the annealed plasma-resistant glass can be included. By processing the precursor of the chamber internal part for a semiconductor manufacturing process as described above, it is possible to manufacture a sophisticated part. [Example]

[0076] Hereinafter, the present invention will be described in detail with reference to examples. However, the examples according to the present invention can be modified into various different forms, and the scope of the present invention should not be construed as being limited to the examples described below. The examples in this specification are provided to more completely explain the present invention to those skilled in the art.

[0077] Example 1 A composition containing 50 wt% SiO2, 20 wt% Al2O3, 25 wt% CaO, and 5 wt% MgO was prepared. Specifically, 600 g of the composition was placed in a zirconia ball mill and mixed for approximately 1 hour. That is, the composition was dry-mixed with 600 g of composition and 1,800 g of zirconia balls (weight ratio 1:3) and then dried for 24 hours. The dried composition was then melted in a Super Kanthal furnace by increasing the temperature at a rate of 10°C / min until it reached 1,650°C, and maintaining the temperature at 1,650°C for approximately 2 hours and 30 minutes.

[0078] Thereafter, the molten composition was cooled to room temperature to prepare a plasma-resistant glass.

[0079] <Example 2> A plasma-resistant glass was produced in the same manner as in Example 1, except that the composition was changed to contain 45 wt % SiO, 25 wt % AlO, 20 wt % CaO, and 10 wt % MgO.

[0080] Example 3 A plasma-resistant glass was produced in the same manner as in Example 1, except that the composition was changed to contain 40 wt % SiO, 25 wt % AlO, 20 wt % CaO, and 15 wt % MgO.

[0081] Example 4 A plasma-resistant glass was produced in the same manner as in Example 1, except that the composition was changed to contain 55 wt % SiO, 15 wt % AlO, 10 wt % CaO, and 20 wt % MgO.

[0082] <Example 5> A plasma-resistant glass was produced in the same manner as in Example 1, except that the composition was changed to contain 55 wt % SiO, 15 wt % AlO, 5 wt % CaO, and 25 wt % MgO.

[0083] <Comparative Example 1> A plasma-resistant glass was produced in the same manner as in Example 1, except that the composition was prepared to contain 50 wt % SiO, 10 wt % AlO, and 40 wt % CaO.

[0084] <Comparative Example 2> A plasma-resistant glass was produced in the same manner as in Example 1, except that the composition was prepared to contain 50 wt % SiO2, 10 wt % Al2O3, and 40 wt % MgO.

[0085] <Experimental Example 1: Measurement of the melting state of plasma-resistant glass> The samples of Examples 1 to 5 were placed in a platinum crucible and heated at a temperature of 1,650° C. and 1 atmosphere for 4 hours, and then the appearance was measured.

[0086] Fig. 3 is a photograph of the plasma-resistant glasses of Examples 1 to 5, which are an embodiment of the present invention. Referring to Fig. 3, it was confirmed that all of Examples 1 to 5 were melted and vitrified without any unmelted portions.

[0087] <Experimental Example 2: Measurement of dielectric constant> The dielectric constants of Examples 1 to 5 and Comparative Examples 1 and 2 were measured at a measurement frequency of 1 MHz using a Keysight E4990A Impedance Analyzer, and the results are summarized in Table 1 below.

[0088] [Table 1]

[0089] The dielectric constant of Example 1 was measured to be 7.59, that of Example 2 to be 7.39, that of Example 3 to be 7.19, that of Example 4 to be 6.99, and that of Example 5 to be 6.79. However, it was confirmed that the dielectric constant of Comparative Example 1 was 10.13 and that of Comparative Example 2 to be 6.6, which were both excessively high and low.

[0090] <Experimental Example 3: Measurement of etching step and etching rate> The samples of Examples 1 to 5, Comparative Examples 1 and 2, and Reference Example 1 made of quartz were partially exposed to a mixed plasma of fluorine and argon (Ar) for one hour, and the etching step height, which is the difference between the area exposed to the plasma and the area not exposed, was measured using a confocal laser microscope (OLS 5100, Olympus, 400x magnification). The etching step height was divided by the etching time to calculate the etching rate, which is summarized in Table 2 below.

[0091] [Table 2]

[0092] Referring to Table 1, it was confirmed that Examples 1 to 5, which contained all of SiO2, Al2O3, CaO, and MgO and satisfied the specific contents, achieved low etching step heights and etching rates.

[0093] In contrast, Reference Example 1, which corresponds to quartz, was confirmed to have a high etching step and etching rate, and Comparative Examples 1 and 2, which did not contain either CaO or MgO, were confirmed to have a high etching step and etching rate.

[0094] Therefore, in one embodiment of the present invention, the plasma-resistant glass satisfies the required contents of SiO, AlO, CaO, and MgO, thereby achieving a low etching rate and glass transition temperature, a low thermal expansion coefficient to prevent thermal shock at high temperatures, a low melting temperature, a dielectric constant within a specific range, and optical transmittance and high hardness to improve mechanical properties and durability.

[0095] Although the present invention has been described above using limited examples, the present invention is not limited thereto, and it goes without saying that various modifications and variations can be made by a person having ordinary skill in the art to which the present invention pertains within the technical spirit of the present invention and the equivalent scope of the claims set forth below. [Explanation of symbols]

[0096] S11: Composition melting step S13: Cooling step S21: Plasma-resistant glass melting step S23: Mold injection step S25: Annealing step S27: Processing step

Claims

1. 20% by weight or more and 60% by weight or less of SiO 2 10% by weight or more and 30% by weight or less of Al 2 O 3 0.01 wt % to 35 wt % of CaO, and 0.01 wt % to 30 wt % of MgO, The dielectric constant is 6.65 or more and 8.10 or less. Plasma resistant glass.

2. The total content of the CaO and the MgO is 15% by weight or more and 35% by weight or less. The plasma-resistant glass according to claim 1.

3. The SiO 2 and the Al 2 O 3 The weight ratio of The plasma-resistant glass according to claim 1.

4. The SiO 2 The content is 40% by weight or more and 55% by weight or less, The Al 2 O 3 The content is 15% by weight or more and 30% by weight or less, The content of CaO is 1% by weight or more and 35% by weight or less, the content of MgO is 1% by weight or more and 25% by weight or less, The dielectric constant is equal to or greater than 6.75 and equal to or less than 7.

60. The plasma-resistant glass according to claim 1.

5. The light transmittance is 80% or more and 100% or less. The plasma-resistant glass according to claim 1.

6. Vickers hardness is 650 HV or more and 1,000 HV or less, The plasma-resistant glass according to claim 1.

7. The glass transition temperature is 600°C or higher and 850°C or lower. The plasma-resistant glass according to claim 1.

8. The thermal expansion coefficient is 4.0 x 10 -6 m / (m℃) or more 6.0×10 -6 m / (m ° C.) or less, The plasma-resistant glass according to claim 1.

9. The etching rate by a mixed plasma of fluorine and argon (Ar) is more than 0 nm / min and 20 nm / min or less; The plasma-resistant glass according to claim 1.

10. The melting point is 1,500°C or higher and 1,750°C or lower. The plasma-resistant glass according to claim 1.

11. Manufactured from the plasma-resistant glass of claim 1. Chamber internal parts for semiconductor manufacturing processes.

12. The internal parts include a focus ring, an edge ring, a cover ring, a ring shower, an insulator, an EPD window, an electrode, a view port, an inner shutter, an electrostatic chuck, a heater, a chamber liner, a shower head, a CVD (Chemical Vapor Deposition) boat, a wall liner, a shield, a cold pad, and a source head. head, outer liner, deposition shield, upper liner, exhaust plate, and mask frame; 12. The chamber internal component for a semiconductor manufacturing process according to claim 11.

13. 20% by weight or more and 60% by weight or less of SiO 2 10% by weight or more and 30% by weight or less of Al 2 O 3 %, and 0.01 wt. % to 35 wt. % of CaO, and 0.01 wt. % to 30 wt. % of MgO; and cooling the molten composition. Method for manufacturing plasma-resistant glass.

14. The melting temperature in the step of melting the composition is 1,400°C or higher and 1,700°C or lower. A method for producing the plasma-resistant glass according to claim 13.

15. A step of melting the plasma-resistant glass according to any one of claims 1 to 10; pouring the molten plasma-resistant glass into a mold; and annealing the implanted plasma resistant glass. A method for manufacturing chamber internal parts for semiconductor manufacturing processes.

16. The melting temperature in the step of melting the plasma-resistant glass is 1,500°C or higher and 1,750°C or lower. The method for manufacturing a chamber internal component for a semiconductor manufacturing process according to claim 15.

17. The temperature of the annealing step is 400°C or higher and 900°C or lower. The method for manufacturing a chamber internal component for a semiconductor manufacturing process according to claim 15.

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