Integrated process sequence for hybrid bonding applications

Abstract

A method for sequencing a hybrid bonding process by dual-linking a die source and target, the method including selecting a die source for bonding, selecting a target to which the die is bonded, linking the source to the target, linking the target to the source, forming an integrated bonding product sequence including a first linked bonding sequence for the source and a second linked bonding sequence for the target, determining bonding process chamber assignments and process timing for the source and target based on the integrated bonding product sequence, and bonding the die from the source to the target using the integrated bonding product sequence.

Description

[Technical Field]

[0001] FIELD Embodiments of the present principles relate generally to semiconductor processing of semiconductor substrates. [Background technology]

[0002] Hybrid bonding is the bonding of two or more types of materials in a single bonding process. For example, a die may be formed from a dielectric material and have copper contacts. A substrate may also be formed from a dielectric material and have copper contacts. When a die is bonded to a substrate, the die's dielectric material bonds to the substrate's dielectric material, and the die's contacts bond to the substrate's contacts. To form a proper bond, both the die and the substrate undergo a bonding preparation process (activation) that may involve several different types of process chambers. The substrate holding the die undergoes a different preparation process than the substrate to which the die is bonded. When using a conventional stand-alone bonder in a simplified bonding process, there is no in-tool activation, so the die and substrate processes can be easily coordinated to prepare each for insertion into the bonder. However, the inventors have observed that the need for multiple die sources for bonding to a substrate makes it extremely difficult, if not impossible, to coordinate an in-line activation process.

[0003] Therefore, the inventors have provided a method for improving hybrid bonding sequences with the ability to consider complex multi-die sources within reasonable latency while optimizing the throughput of the integrated hybrid bonding tool. Summary of the Invention

[0004] Provided herein is a method for sequencing a hybrid bonding process for an integrated hybrid bonding tool.

[0005] In some embodiments, a method for sequencing a hybrid bonding process may include selecting a source of die for bonding; selecting a target to which the die is bonded; linking the source to the target; linking the target to the source; forming an integrated bonding product sequence including at least a first linked bonding sequence for the source and a second linked bonding sequence for the target; determining bonding process chamber assignments and process timing for the source and target based on the integrated bonding product sequence; and bonding the die from the source to the target using the integrated bonding product sequence.

[0006] In some embodiments, a method for sequencing a hybrid bonding process may include selecting a source of die for bonding, selecting a target to which the die is bonded, linking the source to the target, linking the target to the source, forming an integrated bonding product sequence including a first linked bonding sequence for the source and a second linked bonding sequence for the target, determining bonding process chamber assignments and process timing for the source and target based on the integrated bonding product sequence, comparing the integrated bonding product sequence with a user-supplied bonding sequence, determining differences between the integrated bonding product sequence and the user-supplied sequence, and notifying a user of the differences and compatibility with the hybrid bonding tool.

[0007] In some embodiments, a non-transitory computer-readable medium having stored thereon instructions that, when executed, cause a method for sequencing a hybrid bonding process to be performed, the method including selecting a source of die for bonding; selecting a target to which the die is bonded; linking the source to the target; linking the target to the source; forming an integrated bonding product sequence including at least a first linked bonding sequence for the source and a second linked bonding sequence for the target; determining bonding process chamber assignments and process timing for the source and target based on the integrated bonding product sequence; and bonding the die from the source to the target using the integrated bonding product sequence.

[0008] Other and further embodiments are disclosed below.

[0009] Embodiments of the present principles, briefly summarized above and described in more detail below, can be understood by reference to exemplary embodiments of the principles as illustrated in the accompanying drawings. However, the accompanying drawings illustrate only typical embodiments of the present principles and therefore should not be considered limiting in scope, as the present principles are susceptible to other equally effective embodiments. [Brief explanation of the drawings]

[0010] [Figure 1] 1 illustrates a process flow for hybrid bonding in accordance with some embodiments of the present principles; [Figure 2] 1 is an isometric view of the bonding surface of a die and a substrate, according to some embodiments of the present principles; [Figure 3] 1 is a schematic diagram of a user interface for dual linking multiple sources and targets, according to some embodiments of the present principles; [Figure 4]1 is a top view of a die bonding location on a target, in accordance with some embodiments of the present principles; [Figure 5] FIG. 10 is a top view of separated die locations with source bin information, according to some embodiments of the present principles; [Figure 6] 1 illustrates a method for sequencing a hybrid bonding process, in accordance with some embodiments of the present principles; [Figure 7] 1 is a schematic top view of an integrated hybrid bonding tool for bonding a die to a substrate, in accordance with some embodiments of the present principles; DETAILED DESCRIPTION OF THE INVENTION

[0011] For ease of understanding, the same reference numerals have been used, where possible, to designate identical elements common to the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further elaboration.

[0012] The present method provides a doubly linked product sequence for hybrid bonding applications that defines a complete activation and bonding scheme. A product sequence is a set of one target and at least one (or more) source sequences. Every target sequence contains a reference / link to every source sequence, and every source sequence has a reference / link to a target sequence. The doubly linked product sequence contains a bonding order, which includes a link from the source (die source) to the target and a link from the target to the source. The present method enables hybrid bonding with different levels of complexity, allowing each material involved to have a separate sequence of pre-bond activation. Furthermore, the doubly linked source and target sequences prevent user error and optimize material routing through the integrated bonding tool to meet dwell time or wait time requirements. The present method enables complex die patterns, die bonding order selection, and significantly reduced dwell time from when the first die is bonded to the target wafer until the last die is bonded to the target wafer.

[0013] In its simplest form, a hybrid bonding product requires two materials: a target and a source. As used herein, a target is a substrate or wafer onto which a die is bonded. As used herein, a source is a component wafer from which a die is picked and placed on the target during the bonding process. Depending on the complexity, the number of source wafer types can vary. A final semiconductor product, such as a chip, can have any number of dies from any number of sources. Before bonding can occur, both the source and target must be prepared for the actual bonding act. The target and source go through various process chambers and processes. Once the materials (i.e., the target and source) are fully prepared, they are transferred to the bonding chamber. The bonding sequence of the present principles also defines the die bonding order and the mating materials (target to source and source to target). In the present method, the target wafer bonding process clearly specifies the source sequence to be used, and the source sequence specifies the target to be used, so the source sequence and target sequence are integrated into a single product sequence (an integrated bonding product sequence). A single product sequence not only allows the sequencer / scheduler to time the movement of targets and correct sources to the bonder and keep latency below the activation threshold, but also reduces user error when submitting process jobs using individual sequences.

[0014] The method provides overall performance improvements in hybrid bonding process flows by dually linking the target and source bonding process flows to form an integrated bonding product sequence. The method is optimized for integrated hybrid bonding tools with on-board auxiliary process chambers and buffers. Integrated hybrid bonding tools, such as the integrated hybrid bonding tool shown in FIG. 7 (described below), provide multiple processing chambers or stations in a controlled environment. The controlled environment allows processing within individual chambers and movement of substrates between chambers without risk of contamination, for example, from exposure to undesirable environments that could cause oxidation of materials on the substrate and / or particulate deposition on the substrate that could cause damage and / or inhibit performance.

[0015] FIG. 1 illustrates an example, but not limiting, bonding process flow 100 of a target 118 and a source 102. In the bonding process, both the die (source) and the target to which the die is bonded are prepared prior to bonding to improve bonding performance. In some cases, the source 102 may be processed in parallel with, before, or after the target 118 to which the die from the source 102 is bonded. As used herein, a source may be a film frame, a chiplet, a top die, or a wafer or substrate that provides a component for bonding to a target, such as a substrate, base wafer, base die, or unit, respectively. For brevity, and not intended to be limiting, the term “die” is used herein to refer to a film frame, chiplet, top die, or component supplied by the source that is bonded to the target.

[0016] The source 102 may undergo other processes prior to the hybrid bonding process. These may include upstream processing such as patterning, chemical mechanical polishing (CMP), backgrinding, and dicing. In some embodiments, for example, the die may be separated (singulated) and held together on their backsides by dicing tape to create the source 102. In some embodiments, the die may be reconstituted (molded) on a carrier wafer to form the source 102 from which the die is selected for bonding. In the bonding process flow 100, in some embodiments, the source 102 typically undergoes a first wet cleaning process 104, followed by a degassing process 106 to help remove moisture from the source 102. The source 102 is then subjected to a first plasma activation process 108 to enhance bonding attraction, followed by a first hydration process 110. The source 102 is then subjected to a radiation process 112 (e.g., UV radiation, etc.) prior to bonding to loosen the adhesive bonds holding the die to the source 102. In some embodiments, the target 118 may undergo other processes prior to the bonding process flow 100. The target 118 may also have a die previously stacked on it. The target 118 is processed before, simultaneously with, or after the processing of the source 102. In some embodiments, the target 118 first undergoes a second wet cleaning process 120 and then a second plasma activation process 122. The target 118 then undergoes a second hydration process 124 in preparation for bonding.

[0017] Bonding is then achieved by subjecting the source 102 to an ejection and picking process 114, which allows the die to be selected and flipped in preparation for bonding. In a bonding process 116, the die is placed on a target 118 and bonded to the target 118, resulting in a bonded die-to-target target 126. The bonded die-to-target target 126 may have multiple dies bonded to its surface during one or more bonding sessions. In some embodiments, a low-temperature annealing process is performed on the bonded die-to-target target 126 to reflow the die-to-target connection and further bond the connection. FIG. 2 is an isometric view 200 illustrating a die 202 from the source 102 being ejected / flipped and bonded to a target bonding surface 206 of the target 118. When the die 202 is attached to the source 102, the top surface of the die 202 is the die bonding surface 204. The die 202 is flipped 208 so that the bottom surface of the die 202 becomes the die bonding surface 204. During bonding 210, the die bonding surface 204 and the target bonding surface 206 can be brought into contact and bonded together. Bonding performance is affected by parameters such as bonding surface contamination (preparation), bonding pressure, and / or bonding temperature.

[0018] One aspect of creating an integrated bonding product sequence is to consider all processing requirements (e.g., latency, etc.) and any possible timing issues or bottlenecks between the source and target sequences (e.g., a limited number of process chambers or only one available at a given time). In other words, for an integrated bonding product sequence to function to its full potential, both process time (e.g., latency) and throughput (e.g., bottlenecks) must be met. In traditional process flows, the source is considered a consumable (source-fed die) and is not treated as a wafer. In the method of the present invention, the source is first treated as a wafer during preparation for the bonding process and then as a consumable during the actual bonding process. Bonding process and equipment factors and constraints are used to align the source and target bonding processes (synchronize the materials, i.e., target and source) to produce the desired results.

[0019] The method of the present principles considers the complexity of the bonding process in forming an integrated bonding product sequence (product sequence). Factors such as, but not limited to, target selection, one or more source selections, chamber metrics (e.g., strategy, motion control, etc.), robot velocity profile, die location bonding map (e.g., E142 map, etc.), and / or die-level configuration of materials (e.g., material type, binning, source and source location, etc.) may be considered in the integrated bonding product sequence. The integrated bonding product sequence may also account for additional constraints such as, but not limited to, maximizing bonder utilization, minimizing critical process wait times (e.g., just-in-time processing of materials, etc.), user-created process sequences associated with specific tasks, and / or optimizing material handling for in-time consumption while maximizing bonder utilization.

[0020] In some embodiments, a user interface (UI) 300 such as that depicted in FIG. 3 can be used to provide an easy and intuitive linking process for creating an integrated bonded product sequence. In the exemplary UI 300, a user can easily link a target sequence 302 to a first source sequence 304 via a first source sequence link entry 312 in the target sequence 302. Similarly, a second source sequence 306 is linked to the target sequence 302 via a second source sequence link entry 314. Similarly, a third source sequence 308 is linked to the target sequence 302 via a third source sequence link entry 316. Any number of sources can be linked to a given target source sequence. Similarly, a first source sequence 304 is linked to the target sequence 302 via a first target sequence link entry 318 in the first source sequence 304. The second source sequence 306 is linked to the target sequence 302 via a second target sequence link entry 320 in the second source sequence 306, and the third source sequence 308 is linked to the target sequence 302 via a third target sequence link entry 322 in the third source sequence 308. The dual target-to-source and source-to-target links enable the formation of an integrated bonded product sequence that includes one or more source bonding processes and at least one target bonding process.

[0021] In other words, to perform step N of target sequence 302, Source 1 is required and must be ready for bonding during step N of target sequence 302. At the same time, Source 1 must be ready to bond to the target at step X of source sequence 1. To perform step N+1 of target sequence 302, Source 2 is required and must be ready for bonding during step N+1 of target sequence 302. At the same time, Source 2 must be ready to bond to the target at step X of source sequence 2. To perform step M of target sequence 302, Source 3 is required and must be ready for bonding during step M of target sequence 302. At the same time, Source 3 must be ready to bond to the target at step X of source sequence 3. Using such a user interface, a user can easily perform linking and verify the linked relationships. UI 300 is intended as an example and not as a limitation.

[0022] As can be seen from FIG. 1 , the bonding process for a single source and target can be complicated due to resource scheduling issues, transport times, and overall timing to ensure that the die and target arrive at the bonder at the correct moment for bonding. When a target requires multiple sources to provide multiple types of die, the process becomes too complicated for a user to properly schedule all of the necessary resources. The method of the present principles provides a solution to this complex problem. For example, a target incorporating multiple sources may have multiple bonding locations. Diagram 400 in FIG. 4 illustrates an example target 118 having a first die bond location 402, a second die bond location 404, and a third die bond location 406 on a single chip 408. Each die bond location may receive die from a different source. In some cases, the order in which the bond locations are populated can be important. The method provided herein takes this importance into account and can ensure that bonding occurs in the correct order.

[0023] Another issue addressed by this method is the binning of dies on the source wafer. During manufacturing, defects can result in performance degradation of certain dies on the source wafer. Some targets may require only the highest-performing dies, reducing the number of usable dies from the source wafer for a particular target. For example, diagram 500 in FIG. 5 illustrates an example of a source 102 having dies of multiple bin types, such as bin type A 502 and bin type B 504. As dies are removed from the source 102, the number of available dies of a given bin type decreases, leaving empty positions 506 on the source 102. In some cases, multiple sources containing the same die bin type may need to be scheduled with the bonder to meet the requirements of a given target, increasing process complexity. Additionally, the integrated hybrid bonding tool 700 has many process chambers and flow control assemblies (e.g., robotic transfer tools, buffers, etc.) that require proper scheduling in the integrated bonding product sequence.

[0024] In some embodiments, to form an integrated bonding product sequence (product sequence), the following parameters are determined to enable a functioning integrated bonding product sequence. First, the product sequence considers resource and timing issues for both the source and target bonding processes. All resource bottlenecks must be resolved by aligning or synchronizing the source and target bonding processes. The number of steps in each process as well as the duration of the steps are considered. The product sequence aligns these processes to eliminate resource bottlenecks, while also using process timing to control the source and target feed rates and thus bonding throughput. Second, the integrated bonding product sequence must consider process chamber metrics. For example, but not limited to, the time to receive a particular type of wafer, the time for the robot to pick up and / or place the wafer, the time to execute the process recipe (chamber processing time), and / or the time for the robot to transport the wafer through the integrated hybrid bonding tool.

[0025] The total duration can include wafer handling time (e.g., automation or robot time) plus all processing times. Additionally, other miscellaneous times, such as the time required to bring the process chamber to a safe state (e.g., venting hazardous gases before wafer removal), may be included. Wafer movement through the integrated tool is sometimes referred to as "motion control." Robot velocity profiles for active robotic handling of the wafer may also be used to determine the integrated bonding product sequence. Similarly, die bonding maps (e.g., E142 maps, etc.) and die-level configurations (e.g., binning, processor speed, etc.) may also be used. As depicted in Figure 5, source wafers may not all have the same die binning, meaning that not 100% of the dies may be usable for a particular target. Additionally, some source wafers have fewer available dies than other source wafers. Additional sources may need to be loaded into the bonder to complete the target bonding process.

[0026] Alternatively, the target can be moved to a subsequent bonder and then returned to the initial bonder when more of a particular die type becomes available for the process. In some cases, a particular target may require fewer bin types, and when fewer bin types are available, that target may be placed at the beginning of the process. The integrated bonding product sequence takes into account many, if not all, of the above scenarios and more. The integrated bonding product sequence also takes into account user-desired constraints. For example, and not meant to be limiting, a user may set an activation time or wait time that must be met for the bonding process. The integrated bonding product sequence attempts to maximize resources and throughput given the user's constraints. If maximizing resources and throughput is not possible due to user constraints, the integrated bonding product sequence may present the user with options that emphasize throughput over resource maximization or present results based on a broader tolerance of the given user constraints.

[0027] A method 600 for sequencing a hybrid bonding process is depicted in FIG. 6 for some embodiments. At optional block 602, inputs for the hybrid bonding process can be accepted. Such inputs can include, but are not limited to, at least one process recipe for at least one process chamber, at least one die map input for the target, and / or at least one process sequence input for bonding. These inputs can be used in determining bonding process chamber allocation and process timing, as described below. One or more inputs can be accepted at any stage of method 600. At block 604, at least one source of die is selected for bonding. In some cases, multiple sources may be selected so that multiple different die can be bonded on a single or multiple targets. At block 606, a target to which the die will be bonded is selected. At block 608, the selected at least one source is linked to the target. At block 610, the selected target is linked to the selected at least one source. At block 612, an integrated bonded product sequence is formed that includes at least one first linked bonding sequence for at least one source and a second linked bonding sequence for the target.

[0028] In block 614, bonding chamber allocation and process timing for the at least one source and target are determined based on the integrated bonding product sequence. In some embodiments, determining the bonding chamber allocation and process timing may include, but is not limited to, considering at least one source activation latency and target activation latency, maximum utilization of the at least one hybrid bonding process chamber, just-in-time consumption for maximum utilization of the at least one hybrid bonding process chamber, process chamber strategy and motion control duration, robot transfer speed, die-level configuration of materials for the at least one source, and / or a die map for placing dies on the target. In optional block 616, the integrated bonding product sequence is compared with a user bonding sequence. In optional block 618, differences between the integrated bonding product sequence and the user bonding sequence are determined. In optional block 620, a user is notified of the differences between the sequences. The user can be notified of the differences and compatibility with the hybrid bonding tool. For example, the user may be notified of issues with throughput levels or bonder utilization levels compared to the integrated bonding product sequence. The user can then decide whether to modify the integrated bonding product sequence or continue using the integrated bonding product sequence. In block 622, at least one die from at least one source is bonded to the target based on the integrated bonding product sequence. Or, alternatively, if the user has modified the sequence for a particular desired result, based on the modified integrated bonding product sequence.

[0029] FIG. 7 illustrates a schematic top view of an integrated hybrid bonding tool 700 for bonding a die to a target in accordance with at least some embodiments of the present principles. The methods described above can be performed using the integrated hybrid bonding tool 700. The integrated hybrid bonding tool 700 generally includes an equipment front-end module (EFEM) 702 and multiple automation modules 710 coupled in series to the EFEM 702. The multiple automation modules 710 are configured to shuttle one or more types of substrates 712 from the EFEM 702 through the integrated hybrid bonding tool 700 and perform one or more processing steps on the one or more types of substrates 712 (e.g., a source having a die, a target to which the die is bonded, etc.). Each of the multiple automation modules 710 generally includes a transfer chamber 716 and one or more process chambers 706 coupled to the transfer chamber 716 for performing one or more processes. The multiple automation modules 710 are coupled to each other via their respective transfer chambers 716 to provide modular expandability and customizability for the integrated hybrid bonding tool 700. As shown in FIG. 7, the plurality of automation modules 710 includes three automation modules, a first automation module 710a coupled to the EFEM 702, a second automation module 710b coupled to the first automation module 710a, and a third automation module 710c coupled to the second automation module 710b.

[0030] The EFEM 702 includes a plurality of load ports 714 for receiving one or more types of substrates 712. In some embodiments, the one or more types of substrates 712 include 200 mm wafers, 300 mm wafers, 450 mm wafers, tape frame substrates, carrier substrates with or without reconfigured dies, silicon substrates, glass substrates, etc. In some embodiments, the plurality of load ports 714 includes at least one of one or more first load ports 714 a for receiving a first type of substrate 712 a or one or more second load ports 714 b for receiving a second type of substrate 712 b. In some embodiments, the first type of substrate 712 a has a different size than the second type of substrate 712 b. In some embodiments, the second type of substrate 712 b includes a tape frame substrate or a carrier substrate. In some embodiments, the second type of substrate 712 b includes multiple dies disposed on a tape frame or carrier plate. In some embodiments, the second type of substrate 712 b can hold dies of different types and sizes. As such, one or more second load ports 714b can have different sizes or receiving surfaces configured to load a second type of substrate 712b having a different size. In some embodiments, multiple load ports 714 are arranged along a common side of the EFEM 702. While FIG. 7 shows a pair of first load ports 714a and a pair of second load ports 714b, the EFEM 702 can include other combinations of load ports, such as one first load port 714a and three second load ports 714b. Additionally, the integrated hybrid bonding tool 700 can incorporate a buffer 790 that provides temporary storage or buffering for source and target materials alike. The buffer 790 helps enable the integrated bonding product sequence provided by the present principles to meet timing and other factors and / or constraints by making the target and / or source readily available for processing without requiring external retrieval.

[0031] In some embodiments, the EFEM 702 includes a scanning station 708 having a substrate ID reader for scanning one or more types of substrates 712 for identifying information. In some embodiments, the substrate ID reader includes a barcode reader or an optical character recognition (OCR) reader. The integrated hybrid bonding tool 700 is configured to use any identification information from the scanned one or more types of substrates 712 to determine processing based on the identification information, such as different processes and / or placements for the first type substrates 712 a and the second type substrates 712 b. In some embodiments, the scanning station 708 may be configured to perform rotational movement to align the first type substrates 712 a or the second type substrates 712 b. In some embodiments, one or more of the multiple automation modules 710 include the scanning station 708. The EFEM robot 704 is disposed in the EFEM 702 and configured to transport the first type substrates 712 a and the second type substrates 712 b between the multiple load ports 714 and the scanning station 708. The EFEM robot 704 can include a substrate end effector for handling a first type of substrate 712 a and a second end effector for handling a second type of substrate 712 b. The EFEM robot 704 can rotate or move linearly while rotating.

[0032] The transfer chamber 716 includes a buffer 720 configured to hold one or more first-type substrates 712a. In some embodiments, the buffer 720 is configured to hold one or more of the first-type substrates 712a and one or more of the second-type substrates 712b. The transfer chamber 716 includes a transfer robot 726 configured to transfer the first-type substrates 712a and the second-type substrates 712b between the buffer 720, one or more process chambers 706, and a buffer located in an adjacent one of the plurality of automated modules 710. For example, the transfer robot 726 in the first automated module 710a is configured to transfer the first-type substrates 712a and the second-type substrates 712b between the first automated module 710a and the buffer 720 in the second automated module 710b. In some embodiments, the buffer 720 is located within the interior volume of the transfer chamber 716, advantageously reducing the overall footprint of the tool. Additionally, the buffer 720 may be open to the interior volume of the transfer chamber 716 to facilitate access by the transfer robot 726 .

[0033] The one or more process chambers 706 may include an atmospheric chamber configured to operate under atmospheric pressure and a vacuum chamber configured to operate under vacuum pressure. Examples of atmospheric chambers generally include wet cleaning chambers, radiation chambers, heating chambers, metrology chambers, bonding chambers, etc. Examples of vacuum chambers include plasma activation chambers. Atmospheric chambers of the types described above may also be configured to operate under vacuum, if desired. The one or more process chambers 706 may be any process chamber or module necessary to perform a bonding process, cleaning process, radiation process, etc. In some embodiments, the one or more process chambers 706 of each of the multiple automation modules 710 include at least one of a wet cleaning chamber 722, a plasma activation chamber 730, a degassing chamber 732, a radiation chamber 734, or a bonder chamber 740, such that the integrated hybrid bonding tool 700 includes at least one wet cleaning chamber 722, at least one plasma activation chamber 730, at least one degassing chamber 732, at least one radiation chamber 734, and at least one bonder chamber 740. The one or more process chambers 706 may be located in any suitable location in the integrated hybrid bonding tool 700 .

[0034] The wet cleaning chamber 722 is configured to perform a wet cleaning process to clean one or more types of substrates 712 via a fluid, such as water. The wet cleaning chamber 722 may include a first wet cleaning chamber 722a for cleaning a first type of substrate 712a or a second wet cleaning chamber 722b for cleaning a second type of substrate 712b. The degassing chamber 732 is configured to perform a degassing process to remove moisture, for example, via a high-temperature baking process. In some embodiments, the degassing chamber 732 includes a first degassing chamber 732a and a second degassing chamber 732b. The plasma activation chamber 730 may be configured to perform an activation process on the substrates in preparation for hybrid bonding. Activation helps to improve bonding strength between the surfaces. In some embodiments, the plasma activation chamber 730 includes a first plasma activation chamber 730a and a second plasma activation chamber 730b. The radiation chamber 734 is configured to perform a radiation process to reduce adhesion between dies on a source, such as a tape frame substrate or a carrier substrate with reconstructed dies. For example, the radiation chamber 734 may be an ultraviolet radiation chamber configured to direct ultraviolet light toward the source or a heating chamber configured to heat the source. Reducing adhesion between the die and the source facilitates removal of the die from the source. The bonder chamber 740 is configured to transfer and bond at least a portion of the die from the source to a target. The bonder chamber 740 generally includes a first support 742 for supporting one of the first-type substrates 712a and a second support 744 for supporting one of the second-type substrates 712b.

[0035] In some embodiments, the last automated module of the plurality of automated modules 710, e.g., the third automated module 710c in FIG. 7, includes one or more bonder chambers 740 (two are shown in FIG. 7). In some embodiments, a first of the two bonder chambers is configured to remove and bond die having a first size, and a second of the two bonder chambers is configured to remove and bond die having a second size. In some embodiments, one of the plurality of automated modules 710 includes a metrology chamber 718 configured to perform measurements of one or more types of substrates. In FIG. 7, the metrology chamber 718 is shown as part of the second automated module 710b coupled to the transfer chamber 716 of the second automated module 710b. However, the metrology chamber 718 may be coupled to any of the transfer chambers 716 or may be within the transfer chamber 716.

[0036] Controller 780 controls the operation of any of the integrated hybrid bonding tools described herein, including integrated hybrid bonding tool 700. Controller 780 may use direct control of integrated hybrid bonding tool 700 or may do so by controlling a computer (or controller) associated with integrated hybrid bonding tool 700. In operation, controller 780 enables data collection and feedback from integrated hybrid bonding tool 700 to optimize performance of integrated hybrid bonding tool 700 and control process flow in accordance with methods described herein. Controller 780 generally includes a central processing unit (CPU) 782, memory 784, and support circuits 786. CPU 782 may be any form of general-purpose computer processor that can be used in an industrial environment. Support circuits 786 are conventionally coupled to CPU 782 and may include cache, clock circuits, input / output subsystems, power supplies, etc. Software routines, such as the methods described above, may be stored in memory 784 and, when executed by CPU 782, can transform CPU 782 into a specific-purpose computer (controller 780). The software routines may also be stored and / or executed by a second controller (not shown) located remotely from integrated hybrid bonding tool 700 .

[0037] Memory 784 is a form of computer-readable storage medium containing instructions that, when executed by CPU 782, facilitate semiconductor process and device operation. The instructions in memory 784 are in the form of a program product, such as a program, that implements the methods of the present principles. The program code may be in any one of several different programming languages. In one example, the present disclosure may be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program in the program product defines the functions of aspects (including the methods described herein). Exemplary computer-readable storage media include, but are not limited to, non-writable storage media on which information is permanently stored (e.g., a read-only memory device in a computer, such as a CD-ROM disk readable by a CD-ROM drive, flash memory, a ROM chip, or any type of solid-state non-volatile semiconductor memory), and writable storage media on which changeable information is stored (e.g., a floppy disk or hard disk drive in a diskette drive, or any type of solid-state random-access semiconductor memory). Such computer-readable storage media, when carrying computer-readable instructions that direct the functions of the methods described herein, are aspects of the present principles.

[0038] Embodiments according to the present principles may be implemented in hardware, firmware, software, or any combination thereof. Embodiments may also be implemented as instructions stored using one or more computer-readable media, which may be read and executed by one or more processors. A computer-readable medium may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing platform or a "virtual machine" running on one or more computing platforms). For example, a computer-readable medium may include any suitable form of volatile or non-volatile memory. In some embodiments, a computer-readable medium may include a non-primary computer-readable medium.

[0039] While the forgoing is directed to embodiments of the present principles, other and further embodiments of the present principles may be devised without departing from the basic scope thereof.

Claims

1. 1. A method for sequencing a hybrid bonding process, comprising: selecting at least one source of die for bonding; selecting a target to which the die will be bonded; linking said at least one source to said target; linking said target to said at least one source; forming an integrated bonded product sequence including at least one first linked bonding sequence for the at least one source and a second linked bonding sequence for the target; determining bonding process chamber assignments and process timings for the at least one source and the target based on the integrated bonding product sequence; bonding at least one die from the at least one source to the target using the integrated bonding product sequence; A method comprising:

2. 10. The method of claim 1, wherein determining bonding process chamber allocation and process timing includes considering activation latency of the at least one source and activation latency of the target.

3. The method of claim 1 , wherein determining bonding process chamber allocation and process timing includes considering maximum utilization of at least one hybrid bonding process chamber.

4. 4. The method of claim 3, wherein determining bonding process chamber allocation and process timing includes considering just-in-time consumption to maximize utilization of the at least one hybrid bonding process chamber.

5. 10. The method of claim 1, wherein determining bonding process chamber allocation and process timing includes considering process chamber strategy and motion control duration.

6. The method of claim 1 , wherein determining bonding process chamber allocation and process timing includes considering robot transport speed.

7. 10. The method of claim 1, wherein determining bonding process chamber allocation and process timing includes considering a die-level configuration of material of the at least one source.

8. The method of claim 1 , wherein determining bonding process chamber assignments and process timing includes considering a die map for placing dies on the target.

9. comparing the consolidated bonding product sequence with a user-supplied bonding sequence; determining a difference between the consolidated bonding product sequence and the user-supplied bonding sequence; notifying a user of the differences and compatibility with a hybrid bonding tool; The method of claim 1 further comprising:

10. Informing a user of the throughput level or bonder utilization level compared to the integrated bonding product sequence.

10. The method of claim 9, further comprising:

11. accepting at least one recipe input for at least one process chamber; accepting at least one die map input for the target; accepting at least one process sequence input for bonding; determining bonding process chamber assignments and process timings based on the at least one recipe input, the at least one die map input, or the at least one process sequence input; The method of claim 1 further comprising:

12. 1. A method for sequencing a hybrid bonding process, comprising: selecting at least one source of die for bonding; selecting a target to which the die will be bonded; linking said at least one source to said target; linking said target to said at least one source; forming an integrated bonded product sequence including at least one first linked bonding sequence for the at least one source and a second linked bonding sequence for the target; determining bonding process chamber assignments and process timings for the at least one source and the target based on the integrated bonding product sequence; comparing the consolidated bonding product sequence with a user-supplied bonding sequence; determining a difference between the consolidated bonding product sequence and the user-supplied bonding sequence; notifying a user of the differences and compatibility with a hybrid bonding tool; A method comprising:

13. Informing a user of the throughput level or bonder utilization level compared to the integrated bonding product sequence. The method of claim 12 further comprising:

14. accepting at least one recipe input for at least one process chamber; accepting at least one die map input for the target; accepting at least one process sequence input for bonding; determining bonding process chamber assignments and process timings based on the at least one recipe input, the at least one die map input, or the at least one process sequence input; The method of claim 12 further comprising:

15. 13. The method of claim 12, wherein determining bonding process chamber allocation and process timing includes considering activation latency of the at least one source and activation latency of the target.

16. 13. The method of claim 12, wherein determining bonding process chamber allocation and process timing includes considering maximum utilization of at least one hybrid bonding process chamber.

17. determining bonding process chamber assignments and process timings; (a) considering process chamber strategies and motion control durations; (b) considering the transport speed of the robot; (c) considering a die-level configuration of the material of the at least one source; or (d) considering a die map for arranging dies on the target; The method of claim 12 , comprising at least one of:

18. 1. A non-transitory computer-readable medium having stored thereon instructions that, when executed, cause a method for sequencing a hybrid bonding process to be performed, the method comprising: selecting at least one source of die for bonding; selecting a target to which the die will be bonded; linking said at least one source to said target; linking said target to said at least one source; forming an integrated bonded product sequence including at least one first linked bonding sequence for the at least one source and a second linked bonding sequence for the target; determining bonding process chamber assignments and process timings for the at least one source and the target based on the integrated bonding product sequence; bonding at least one die from the at least one source to the target using the integrated bonding product sequence; 1. A non-transitory computer-readable medium comprising:

19. determining bonding process chamber assignments and process timings; (a) considering an activation latency of the at least one source and an activation latency of the target; (b) considering maximum utilization of at least one hybrid bonding process chamber; (c) considering just-in-time consumption to maximize utilization of the at least one hybrid bonding process chamber; (d) considering the process chamber strategy and motion control duration; (e) considering the transport speed of the robot; (f) considering a die-level configuration of the material of said at least one source; or (g) considering a die map for placing dies on the target; 20. The non-transitory computer-readable medium of claim 18, comprising at least one of:

20. The method comprises: comparing the consolidated bonding product sequence with a user-supplied bonding sequence; determining a difference between the consolidated bonding product sequence and the user-supplied bonding sequence; notifying a user of the differences and compatibility with a hybrid bonding tool; 20. The non-transitory computer-readable medium of claim 18, further comprising:

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