Bonding apparatus and bonding method

Abstract

To provide a bonding device and a bonding method capable of reducing a cumulative heat quantity applied to a chip during processing while shortening a processing time when mounting a plurality of chips on a substrate.SOLUTION: The joining device 1 includes the stage 315 made of a light-transmissive material and configured to hold the W1 of the substrate, the head 33H configured to join the chip CP to the W1 of the substrate by bringing the chip CP close to and into contact with the chip joining region to which the chip CP is to be joined in the W1 of the substrate held by the stage 315, and the substrate-heating light sources 51 configured to heat the chip joining region by irradiating the chip joining region in the W1 of the substrate held by the stage 315 with light via the stage 315.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a joining device and a joining method. [Background technology]

[0002] A mounting device has been proposed that includes a mounting section to which a tool section that holds a semiconductor chip is detachably attached, a heating section that is provided in the mounting section and heats the tool section, and a substrate mounting stage section that places a substrate on which a semiconductor chip held by the tool section and heated by the heating section is mounted (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2020-47798 Summary of the Invention [Problem to be solved by the invention]

[0004] When mounting a semiconductor chip on a substrate via a connecting member such as solder, it is preferable to heat both the semiconductor chip and the substrate to a temperature at which the connecting member melts and then cool them to a temperature at which the connecting member solidifies, in order to reduce distortion caused by the difference in thermal expansion between the semiconductor chip and the substrate. This has been achieved in bonding semiconductor chips together. On the other hand, in the case of a mounting device for bonding a semiconductor chip to a substrate, such as that described in Patent Document 1, the substrate has a large heat capacity, making it impossible to rapidly heat and then cool it. Furthermore, since the temperature of the substrate cannot be maintained at a temperature at which the connecting member melts, the temperature of the substrate can only be maintained constant below the temperature at which the connecting member melts, making it impossible to bond the semiconductor chip to the substrate in an ideal state.

[0005] The present invention has been made in consideration of the above-mentioned reasons, and aims to provide a bonding device and a bonding method that can shorten the processing time when mounting multiple chips on a substrate while reducing the cumulative amount of heat applied to the chips during processing. [Means for solving the problem]

[0006] In order to achieve the above object, the joining device according to the present invention comprises: a stage formed from a light-transmitting material and configured to hold a substrate; a head that brings the chip close to a chip bonding area on the substrate held by the stage and brings the chip into contact with the chip bonding area, thereby bonding the chip to the substrate; and a substrate heating light source that, when the chip is brought into contact with the substrate, heats the chip bonding area on the substrate held on the stage by continuously irradiating light through the stage onto the chip bonding area facing the chip to be brought into contact with the substrate. [Effects of the Invention]

[0007] According to the present invention, when a chip is brought into contact with a substrate, a light source continuously irradiates a chip bonding area of ​​a substrate held on a stage, facing the chip to be bonded, via the stage, thereby heating the chip bonding area. This allows the chip bonding area of ​​the substrate facing the chip to be bonded to be locally heated and maintained at a temperature suitable for bonding the chip to the substrate. Furthermore, after the chip is bonded to the substrate, the light irradiation of the substrate is stopped, allowing the heated chip bonding area to cool relatively quickly. This allows the processing time when mounting multiple chips on a substrate to be shortened while also reducing the cumulative heat applied to the chips during processing. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a schematic front view of the inside of a joining device according to an embodiment of the present invention. [Figure 2] 1 is a schematic configuration diagram of a part of a joining device according to an embodiment. [Figure 3] 5A and 5B are diagrams showing the positional relationship between the alignment mark of the chip and the hollow portion of the head according to the embodiment; [Figure 4] 2. (A) is a schematic perspective view showing a part of a bonding section according to an embodiment, and (B) is a cross-sectional view taken along line AA in FIG. 2 of a bonding device according to an embodiment. [Figure 5] FIG. 1A is a diagram showing two alignment marks provided on a chip, and FIG. 1B is a diagram showing two alignment marks provided on a substrate. [Figure 6] 1A and 1B show a stage according to an embodiment, in which FIG. 1A is a plan view and FIG. 1B is a side view. [Figure 7] 1 is a schematic configuration diagram of a part of a joining device according to an embodiment. [Figure 8] 1 is a schematic perspective view of a portion of a joining device according to an embodiment. [Figure 9] 5A to 5C are explanatory diagrams illustrating the operation of the joining device according to the embodiment. [Figure 10] FIG. 2 is a block diagram showing a functional configuration of a control unit according to the embodiment. [Figure 11] 5A to 5C are explanatory diagrams illustrating the operation of the joining device according to the embodiment. [Figure 12] 5A and 5B are diagrams illustrating an example of information stored in a parameter storage unit according to the embodiment. [Figure 13] FIG. 1A is a schematic diagram showing a captured image of alignment marks, and FIG. 1B is a schematic diagram showing a state in which the alignment marks are misaligned with each other. [Figure 14] 10 is a flowchart showing the flow of a parallel adjustment process performed by the joining device according to the embodiment. [Figure 15] 4 is a flowchart showing a flow of a joining process performed by the joining device according to the embodiment. [Figure 16] FIG. 10 is a schematic view of a part of a joining device according to a modified example. [Figure 17] FIG. 10 is a schematic view of a part of a joining device according to a modified example. [Figure 18] FIG. 10 is a schematic front view of the inside of a joining device according to a modified example. [Figure 19] FIG. 10 is a schematic perspective view of an imaging head according to a modified example. [Figure 20] 10A is a schematic diagram of a part of an imaging head according to a modified example, and FIG. 10B is a diagram showing an example of an image captured by an imaging section according to the modified example. DETAILED DESCRIPTION OF THE INVENTION

[0009] A bonding apparatus according to an embodiment of the present invention will be described below with reference to the drawings. The bonding apparatus according to this embodiment is an apparatus for bonding electronic components onto a substrate. The electronic components are, for example, semiconductor chips (hereinafter simply referred to as "chips") supplied from a diced substrate. This bonding apparatus bonds the chip to the substrate by bringing the substrate and the chip into contact with each other and applying pressure and heat.

[0010] 1, bonding apparatus 1 according to this embodiment is a so-called chip mounter that mounts chips CP on substrate W1, and includes stage unit 31, bonding section 33 having head 33H, head driver 36 that drives head 33H, imaging sections 35a and 35b, substrate heating light source 51, imaging section 61, and laser sensor 71. Bonding apparatus 1 also includes camera F-direction driver 365 and camera Z-direction driver 363, as shown in FIG.

[0011] The substrate W1 is, for example, a Si substrate, a sapphire substrate, an alumina substrate, or a glass substrate, with a metal region formed in each bonding region where the chip CP is to be bonded. The chip CP is, for example, a semiconductor chip with metal bumps formed on the side to be bonded to the substrate W1. Here, the metal bumps are made of a material, such as solder, that melts when heated to about 250°C and solidifies when cooled to 200°C or below.

[0012] The bonding section 33 has a Z-axis direction moving member 331, a first disk member 332, a piezo actuator 333, a second disk member 334, a mirror fixing member 336, a mirror 337, and a head 33H. The first disk member 332 is fixed to the lower end of the Z-axis direction moving member 331. Furthermore, the second disk member 334 is disposed below the first disk member 332. The first disk member 332 and the second disk member 334 are connected via the piezo actuator 333. Furthermore, the head 33H is fixed to the lower surface side of the second disk member 334. The head 33H adsorbs and holds the chip CP.

[0013] The head 33H suction-holds the chip CP from vertically above (in the +Z direction). The head 33H has a tip tool 411, a head main body 413, and a heating unit 415 interposed between the tip tool 411 and the head main body 413. The tip tool 411 is made of a material (e.g., silicon (Si)) that transmits imaging light (infrared light, etc.). The heating unit 415 has a ceramic heater, a coil heater, etc., and heats the chip CP held by the tip tool 411 via the tip tool 411. In particular, when a ceramic heater is used, the temperature of the chip CP held by the tip tool 411 can be increased or decreased rapidly. In addition, the heating unit 415 and the head main body 413 are each provided with hollow portions 415a, 415b, 413a, and 413b that allow imaging light to pass through. Each of the hollow portions 415a, 415b, 413a, and 413b is a transparent portion that transmits imaging light and is provided to penetrate the head main body portion 413 in the vertical direction (Z-axis direction). Furthermore, each of the hollow portions 415a, 415b, 413a, and 413b has an elliptical shape when viewed along the Z-axis direction, as shown in FIG. 3. The hollow portions 415a, 415b, 413a, and 413b are arranged point-symmetrically about the axis AX at diagonal portions of the heating unit 415 and the head main body portion 413, which have a substantially square shape when viewed along the Z-axis direction. Holes 334a and 334b ​​are also provided in the second disk member 334 in portions corresponding to the hollow portions 413a and 413b to transmit imaging light.

[0014] As shown in FIG. 4A, three piezo actuators 333 are located between the first disk member 332 and the second disk member 334, and each is expandable and contractible in the Z direction. By controlling the degree of expansion and contraction of each of the three piezo actuators 333, at least one of the tilt of the second disk member 334 with respect to the horizontal plane and the distance between the head 33H and the stage 315 is adjusted. This adjusts at least one of the distance between the bonding surface CPf of the chip CP held by the head 33H and the bonding surface W1f of the substrate W1 and the tilt of the bonding surface CPf of the chip CP held by the head 33H with respect to the bonding surface W1f of the substrate W1. The three piezo actuators 333 are positioned so as not to block illumination light (including reflected light) related to the imaging units 35a and 35b.

[0015] 2, the mirror 337 is fixed to the first disk member 332 via a mirror fixing member 336, and is disposed in the gap between the first disk member 332 and the second disk member 334. The mirror 337 has inclined surfaces 337a and 337b that are inclined diagonally downward at an angle of 45 degrees. Photographing light that is incident on the inclined surfaces 337a and 337b of the mirror 337 from the imaging units 35a and 35b is reflected upward.

[0016] The head driving unit 36 ​​moves the head 33H holding the chip CP vertically upward (+Z direction) to bring the head 33H closer to the stage 315 and bring the metal part MCP1 of the chip CP into contact with the metal part of the substrate W1. More specifically, the head driving unit 36 ​​moves the head 33H holding the chip CP vertically upward (+Z direction) to bring the head 33H closer to the stage 315 and bring the chip CP into contact with the substrate W1.

[0017] The head driving unit 36 ​​has a Z-direction driving unit 34, a rotating member 361, and a θ-direction driving unit 37. The Z-direction driving unit 34 has a servo motor, a ball screw, etc. The Z-direction driving unit 34 is provided on the lower end side of the rotating member 361 (described later), and drives the Z-axis direction moving member 331 of the bonding unit 33 in the Z-axis direction, as shown by arrow AR1. When the Z-direction driving unit 34 moves the Z-axis direction moving member 331 in the Z direction, the head 33H provided at the upper end of the bonding unit 33 moves in the Z direction accordingly. That is, the head 33H is driven in the Z direction by the Z-direction driving unit 34.

[0018] The rotating member 361 has a cylindrical shape, and the cross section of its inner hollow portion is octagonal as shown in FIG. 4(B). On the other hand, the Z-axis moving member 331 has a rod-shaped portion with an octagonal cross section and is inserted inside the rotating member 361. In addition, linear guides 38 are provided between four of the eight side surfaces of the Z-axis moving member 331 and the inner surface of the rotating member 361, so that the Z-axis moving member 331 slides relative to the rotating member 361 in the Z-axis direction. When the rotating member 361 rotates around the rotation axis AX, the Z-axis moving member 331 rotates in conjunction with the rotating member 361. That is, the bonding portion 33 and the rotating member 361 rotate in conjunction with each other around the rotation axis AX, as indicated by arrow AR2.

[0019] Returning to FIG. 2, the θ-direction driving unit 37 has a servo motor, a reducer, etc., and is fixed to a fixed member (not shown) provided in the bonding apparatus 1. The θ-direction driving unit 37 supports the rotating member 361 rotatably about the axis AX. The θ-direction driving unit 37 rotates the rotating member 361 about the rotation axis AX in response to a control signal input from the control unit 90. The θ-direction driving unit 37 and the three piezo actuators 333 described above constitute a head attitude adjustment unit that adjusts the attitude of the head 33H.

[0020] The imaging units 35a and 35b capture images of the chip CP from a position vertically below the chip CP, i.e., from the -Z direction, when the chip CP is positioned on the substrate W1 at the location where the chip CP will be mounted. The imaging unit 35a is fixed to the rotating member 361 via the camera Z-direction drive unit 363 and the camera F-direction drive unit 365. The imaging unit 35b is also fixed to the rotating member 361 via the camera Z-direction drive unit 363 and the camera F-direction drive unit 365. This allows the imaging units 35a and 35b to rotate together with the rotating member 361. As described above, the mirror 337 is fixed to the Z-axis moving member 331, and the rotating member 361 and the Z-axis moving member 331 rotate in conjunction with each other. Therefore, the relative positional relationship between the imaging units 35a and 35b and the mirror 337 remains unchanged, and therefore, regardless of the rotation of the rotating member 361, the photographing light reflected by the mirror 337 is guided to the imaging units 35a and 35b.

[0021] The chip CP is provided with two alignment marks MC1a and MC1b, as shown in FIG. 5A. Furthermore, at least one area AW1 on the substrate W1 where the chip CP is mounted is provided with two alignment marks MW1a and MW1b, as shown in FIG. 5B. The imaging units 35a and 35b each acquire image data including images of the alignment marks MC1a and MC1b on the chip CP and images of alignment marks MW1a and MW1b (described later) on the substrate W1. Based on the image data acquired by the imaging units 35a and 35b, the control unit 90 recognizes the relative positions of each chip CP with respect to the substrate W1 in a direction parallel to the surface of the substrate W1 on which the chip CP is mounted. As shown in FIG. 2, the imaging units 35a and 35b each include image sensors 351a and 351b, optical systems 352a and 352b, and a coaxial illumination system (not shown). The imaging units 35a and 35b each acquire image data related to reflected light of illumination light (e.g., infrared light) emitted from a light source (not shown) of a coaxial illumination system. The illumination light emitted horizontally from the coaxial illumination systems of the imaging units 35a and 35b is reflected by inclined surfaces 337a and 337b of the mirror 337, changing its direction of travel vertically downward. The light reflected by the mirror 337 then travels toward an imaging target area including the chip CP held by the head 33H and the substrate W1 disposed opposite the chip CP, and is reflected by each imaging target area. Here, alignment marks MC1a and MC1b (described later) are provided on the imaging target area of ​​the chip CP, and alignment marks MW1a and MW1b (described later) are provided on the imaging target area of ​​the substrate W1. The light reflected from the imaging target portions of the chip CP and the substrate W1 travels vertically upward, is reflected again by the inclined surfaces 337a and 337b of the mirror 337, and is changed in direction to the horizontal direction before reaching the imaging units 35a and 35b. In this way, the imaging units 35a and 35b acquire image data of the imaging target portions of the chip CP and the substrate W1. Here, the hollow portions 415a, 415b, 413a, and 413b of the head 33H rotate around the axis AX in conjunction with the rotation of the rotating member 361.For example, as shown in Figure 4, when the imaging units 35a and 35b are positioned on the diagonal line connecting the two corners where the alignment marks MC1a and MC1b of the chip CP are provided, the imaging units 35a and 35b can acquire imaging data of the alignment marks MC1a and MC1b through the hollow portions 415a, 415b, 413a, and 413b.

[0022] The camera F-direction driver 365 adjusts the focal positions of the imaging units 35a and 35b by driving the imaging units 35a and 35b in the focus direction, as indicated by arrow AR3 in FIG. 2 . The camera Z-direction driver 363 drives the imaging units 35a and 35b in the Z-axis direction, as indicated by arrow AR4. The camera Z-direction driver 363 typically moves the imaging units 35a and 35b so that the movement amount of the Z-axis moving member 331 in the Z-axis direction is the same as the movement amount of the imaging units 35a and 35b in the Z-axis direction. In this way, when the head 33H moves in the Z-axis direction, the imaged portions of the imaging units 35a and 35b do not change before and after the movement. However, the camera Z-direction driver 363 may move the imaging units 35a and 35b so that the movement amount of the imaging units 35a and 35b in the Z-axis direction is different from the movement amount of the Z-axis moving member 331 in the Z-axis direction. In this case, the relative positions of the imaging units 35a, 35b and the mirror 337 in the Z direction change, and therefore the portions of the chip CP and the substrate W1 that are imaged by the imaging units 35a, 35b change.

[0023] The stage unit 31 has a stage 315 that holds the substrate W1 with its surface W1f, on which the chips CP are mounted, facing vertically downward, i.e., in the -Z direction. The stage 315 is formed into a plate-like shape from glass that is transparent to the laser light emitted from the laser sensor 71. As shown in FIGS. 6(A) and 6(B), the stage unit 31 also has an X-direction moving unit 311, a Y-direction moving unit 313, a stage 315, an X-direction driving unit 321, and a Y-direction driving unit 323. The stage 315 is formed from transparent glass. The X-direction moving unit 311 is fixed to a base member 302, which is fixed to a housing (not shown) of the bonding apparatus 1, via two X-direction driving units 321. The two X-direction driving units 321 each extend in the X direction and are spaced apart in the Y direction. The X-direction driving unit 321 has a linear motor and a slide rail, and moves the X-direction moving unit 311 in the X direction relative to the base member 302. The Y-direction moving unit 313 is disposed below (in the -Z direction) the X-direction moving unit 311 via two Y-direction drivers 323. The two Y-direction drivers 323 each extend in the Y direction and are disposed spaced apart in the X direction. The Y-direction driver 323 has a linear motor and a slide rail, and moves the Y-direction moving unit 313 in the Y direction relative to the X-direction moving unit 311. The X-direction driver 321 and the Y-direction driver 323 together form a stage driver that drives the stage 315 in the horizontal direction. The stage 315 is fixed to the Y-direction moving unit 313. The stage 315 moves in the X and Y directions, as indicated by arrows AR13 in FIG. 1, in response to the movements of the X-direction driver 321 and the Y-direction driver 323. 6(A) and 6(B), an opening 311a having a rectangular shape in a plan view is provided in the center of the X-direction moving section 311, and an opening 313a having a rectangular shape in a plan view is also provided in the center of the Y-direction moving section 313. As a result, by moving the stage 315 in the X and Y directions, the stage unit 31 can change the relative positional relationship between the head 33H of the bonding section 33 and the stage 315, and adjust the mounting position of each chip CP on the substrate W1 held by the stage 315.

[0024] As shown in FIG. 1, a heater substrate HW1 is placed on the stage 315, and the substrate W1 is held on the heater substrate HW1. As shown in FIG. 7, the heater substrate HW1 includes a base HW10 formed into a plate shape from a transparent material such as glass, and multiple heaters HA1 attached to the base HW10. The multiple heaters HA1 are made of a material that absorbs light emitted from a substrate heating light source 51 and generates heat, such as carbon or ceramics. Each of the multiple heaters HA1 is provided on one side of the base HW10 in the thickness direction, facing multiple chip bonding areas BA1 on the substrate W1 where chips are bonded, while the substrate W1 is held by the base HW10. The position and size of the heater HA1 on the heater substrate HW1 are determined based on the position and size of the chip bonding area BA1 on the substrate W1. The heater substrate HA1 can be appropriately replaced depending on the specifications of the substrate W1, allowing it to be used with multiple types of substrates W1.

[0025] As shown in FIGS. 7 and 8 , the substrate heating light source 51 is positioned vertically below the stage 315, i.e., on the −Z direction side. The substrate heating light source 51 continuously irradiates the chip bonding area BA1 of the substrate W1 held on the stage 315 with light via the stage 315 to heat the chip bonding area BA1 of the substrate W1. The substrate heating light source 51 irradiates the heating element HA1 of the heating element substrate HW1 with light to generate heat from the heating element HA1, thereby heating the chip bonding area of ​​the substrate W1 held on the heating element substrate HW1 that faces the heating element HA1. The substrate heating light source 51 can be a light source or laser light source that emits light with a wavelength range from infrared to visible light, or a light source having a halogen lamp. The substrate heating light source 51 is movable in the Z-axis direction, as indicated by arrow AR12 in FIG. 1 , allowing the focal position of the light emitted from the substrate heating light source 51 to be adjusted.

[0026] Furthermore, a shielding member 521 that blocks a portion of the light emitted from the substrate heating light source 51 is disposed between the stage 315 and the substrate heating light source 51. The bonding apparatus 1 further includes a temperature measurement unit 523 that measures the temperature of the shielding member 521 heated by light using a thermocouple 522 disposed in the shielding member 521, and a light source drive unit 53 that adjusts the intensity of the light emitted from the substrate heating light source 51 based on the measured temperature of the shielding member 521 so that the temperature of the chip bonding region BA1 of the substrate W1 is maintained at a preset temperature. The light source drive unit 53 adjusts the intensity of the light emitted from the substrate heating light source 51 so that the temperature of the chip bonding region is maintained at a temperature indicated by set temperature information input from the control unit 90 when bonding the chip CP to the substrate W1.

[0027] Returning to FIG. 1, the imaging unit 61 is disposed vertically below the stage 315, i.e., on the -Z direction side, and captures an image of the substrate W1 placed on the stage 315 from the -Z direction side. The imaging unit 61 is a so-called IR camera that receives infrared light reflected from the substrate W1 when the substrate W1 is irradiated with infrared light. The imaging unit 61 is also movable in the horizontal direction, as indicated by arrow AR10. Furthermore, the imaging unit 61 is movable in the Z-axis direction, as indicated by arrow AR11, which allows the imaging position of the imaging unit 61 to be adjusted.

[0028] The laser sensor 71 is disposed vertically below the stage 315, i.e., on the -Z direction side. As shown in FIG. 9, for example, with the dummy chip CPD held by the head 33H, the laser sensor 71 irradiates laser light from the -Z direction side of the stage 315 toward the dummy chip CPD held by the head 33H. This allows the laser sensor 71 to measure the distance between a holding surface 315f, which holds the substrate W1 on the +Z direction side of the stage 315, and a reflecting surface CPDf on the -Z direction side of the dummy chip CPD. Here, the dummy chip CPD has, for example, three metal regions TEG1, TEG2, and TEG3 disposed at three locations on the reflecting surface CPDf. The laser sensor 71 measures distances L11, L12, and L13 between the holding surface 315f of the stage 315 corresponding to the regions TEG1, TEG2, and TEG3 and the reflecting surface CPDf of the dummy chip CPD.

[0029] The control unit 90 controls the entire bonding apparatus 1 and includes an MPU (Micro Processing Unit), a main memory, an auxiliary memory, an interface, and a bus connecting each unit. The main memory is composed of volatile memory and serves as a work area for the MPU. The auxiliary memory is composed of nonvolatile memory and stores programs executed by the MPU. The auxiliary memory also stores information indicating preset positional deviation thresholds Δxth, Δyth, and Δθth for calculated relative positional deviations Δx, Δy, and Δθ of the chip CP relative to the substrate W1 (described later). The interface converts captured image signals input from the imaging units 35a, 35b, and 41 into captured image information and outputs it to the bus. The MPU also functions as an attitude control unit 911 and a horizontal movement control unit 912, as shown in FIG. 10, by loading and executing programs stored in the auxiliary memory into the main memory. Here, the attitude control unit 911 controls the attitude of the head 33H by outputting control signals to the θ-direction drive unit 37 and the piezo actuator 333 via the interface. The horizontal movement control unit 912 controls the horizontal movement of the stage 315 by outputting a control signal to the X-direction drive unit 321 and the Y-direction drive unit 323 via the interface. The elevation control unit 913 controls the elevation of the head 33H by outputting a control signal to the Z-direction drive unit 34 via the interface.

[0030] The auxiliary storage unit also has a parameter storage unit 931 that stores parameter information indicating parameters reflecting the attitude of the head 33H when the holding surface 315f of the stage 315 and the reflecting surface CPDf of the dummy chip CPD are parallel with each other in a state in which the dummy chip CPD is held by the head 33H. Here, the parameters indicate, for example, the lengths of the piezoelectric elements of the three piezoelectric actuators 333. The parameter storage unit 931 stores, for example, as shown in FIG. 11 , parameter information indicating parameters for each of a plurality of pre-defined sub-regions SA1, SA2, ..., SA45 inside the substrate holding region A1 in which the substrate W1 is held on the holding surface 315f of the stage 315. The parameter storage unit 931 stores parameter information indicating parameters for each of multiple sub-areas SA1, SA2, ..., SA45 in association with area identification information ID_SA1, ID_SA2, ..., ID_SA45 that identifies each sub-area SA1, SA2, ..., SA45, as shown in Figure 12, for example.

[0031] 10 , with the dummy chip CPD held by the head 33H, the horizontal movement control unit 912 controls the X-direction driving unit 321 and the Y-direction driving unit 323 so that one of a plurality of preset sub-regions SA1, SA2, ..., SA45 inside the region on the stage 315 where the substrate W1 is held is positioned facing the head 33H. Next, the attitude control unit 911 controls the three piezo actuators 333 to adjust the attitude of the head 33H so that the dummy chip CPD is parallel to the holding surface of the stage 315, based on distances L11, L12, and L13 between the holding surface 315f of the stage 315 and the reflecting surface CPDf of the dummy chip CPD at portions corresponding to the three portions of the dummy chip CPD measured by the laser sensor 71. Then, the attitude control unit 911 associates parameter information indicating parameters reflecting the attitude of the head 33H in a state in which the attitude of the head 33H has been adjusted with area identification information that identifies the corresponding sub-area, and stores the parameter information in the parameter storage unit 931. Then, the attitude control unit 911 repeatedly performs these processes for all of the multiple sub-areas SA1, SA2, ..., SA45.

[0032] Furthermore, as shown in FIG. 13(A), the control unit 90 acquires a captured image GAa including alignment marks MC1a and MW1a between the chip CP and the substrate W1, and a captured image GAb including alignment marks MC1b and MW1b between the chip CP and the substrate W1. Then, as shown in FIG. 13(B), the control unit 90 calculates misalignment amounts Δxa and Δya between a pair of alignment marks MC1a and MW1a provided on the chip CP and the substrate W1 based on the captured image GAa acquired from the imaging unit 35a. Note that FIG. 13(B) shows a state in which the pair of alignment marks MC1a and MW1a are misaligned with each other. Similarly, the control unit 90 calculates misalignment amounts Δxb and Δyb between another pair of alignment marks MC1b and MW1b provided on the chip CP and the substrate W1 based on the captured image GAb acquired from the imaging unit 35b. The control unit 90 then calculates the relative positional deviations Δx, Δy, and Δθ between the chip CP and the substrate W1 in the X direction, Y direction, and rotation direction around the Z axis based on the positional deviations Δxa, Δya, Δxb, and Δyb of these two sets of alignment marks and the geometric relationship between the two sets of marks.The attitude control unit 911 and the horizontal movement control unit 912 then move the stage 315 in the X direction and Y direction and rotate the head 33H around the Z axis so as to reduce the calculated positional deviations Δx, Δy, and Δθ.This reduces the relative positional deviations Δx, Δy, and Δθ between the chip CP and the substrate W1.

[0033] The bonding apparatus 1 according to this embodiment first acquires parameters indicating the attitude of the head 33H corresponding to each of the plurality of sub-regions on the stage 315 based on distances L11, L12, and L13 between the holding surface 315f of the stage 315 and the reflecting surface CPDf of the dummy chip CPD measured by the laser sensor 71 while the head 33H holds the dummy chip CPD, and stores the parameters in the parameter storage unit 931. Thereafter, the bonding apparatus 1 uses the parameters stored in the parameter storage unit 931 to sequentially bond the chips CP to the substrate W1 while adjusting the attitude of the head 33H for each chip bonding region BA1 facing each of the plurality of sub-regions.

[0034] Here, the parallel adjustment process executed by the bonding apparatus 1 according to this embodiment will be described with reference to FIG. 14. Here, it is assumed that the head 33H holds a dummy chip CPD, and the stage 315 does not hold a substrate W1. First, with the dummy chip CPD held by the head 33H, the bonding apparatus 1 moves the stage 315 to a position where one of the plurality of sub-regions on the stage 315 faces the head 33H (step S201). Here, as shown in FIG. 11, for example, the plurality of sub-regions SA1, SA2, ..., SA45 are each located inside the substrate holding region A1, in which the substrate W1 is held, on the holding surface 351f of the stage 315. Furthermore, with the substrate W1 held in the substrate holding region A1 of the stage 315, each of the sub-regions SA1, SA2, ..., SA45 is positioned opposite one of the plurality of chip bonding regions to which the chips CP on the substrate W1 are bonded.

[0035] 14, next, the bonding apparatus 1 uses the laser sensor 71 to measure the distance between portions of the reflecting surface CPDf of the dummy chip CPD that correspond to the three regions TEG1, TEG2, and TEG3 and the holding surface 315f on the −Z direction side of the stage 315 (step S202). Subsequently, the bonding apparatus 1 adjusts the posture of the head 33H by controlling the degree of expansion and contraction of each of the three piezo actuators 333 so that the holding surface 315f of the stage 315 and the reflecting surface CPDf of the dummy chip CPD are parallel (step S203). After that, the bonding apparatus 1 acquires parameters of each of the three piezo actuators 333 in a state in which the posture of the head 33H has been adjusted, and stores parameter information indicating the acquired parameters in the parameter storage unit 931 in association with the corresponding region identification information (step S204).

[0036] Next, the bonding apparatus 1 determines whether parameter information corresponding to all of the sub-regions SA1, SA2, ..., SA45 on the holding surface 315f of the stage 315 has been stored in the parameter storage unit 931 (step S205). Here, it is assumed that the bonding apparatus 1 determines that there are sub-regions SA1, SA2, ..., SA45 for which parameter information has not yet been stored in the parameter storage unit 931 (step S205: No). In this case, the bonding apparatus 1 selects one of the sub-regions SA1, SA2, ..., SA45 for which parameter information has not yet been stored in the parameter storage unit 931, and moves the stage 315 to a position where the head 33H faces the selected one sub-region SA1, SA2, ..., SA45 (step S201). Subsequently, the processes from step S202 onward are executed again. On the other hand, when the welding apparatus 1 determines that the parameter information corresponding to all of the sub-regions SA1, SA2, . . . , SA45 has been stored in the parameter storage unit 931 (step S205: Yes), it ends the parallel adjustment process.

[0037] Next, the bonding process performed by the bonding apparatus 1 according to this embodiment will be described with reference to Fig. 15. Here, it is assumed that the substrate W1 is transported into the bonding apparatus 1 and held on the stage 315.

[0038] First, the bonding apparatus 1 transfers one chip CP to be bonded to the substrate W1 to the head 33H (step S101). Next, with the chip CP held by the head 33H, the bonding apparatus 1 moves the stage 315 so that the substrate W1 is positioned so that the chip bonding region of the chip CP on the substrate W1 faces the head 33H (step S102). Next, the bonding apparatus 1 identifies, from the parameter information stored in the parameter storage unit 931, parameter information corresponding to the region identification information of the sub-region facing the chip bonding region BA1 facing the head 33H (step S103). Thereafter, the bonding apparatus 1 adjusts the posture of the head 33H by controlling the degree of expansion and contraction of the three piezo actuators 333 based on the parameters indicated by the identified parameter information (step S104).

[0039] Next, the bonding apparatus 1 starts continuously irradiating light from the substrate heating light source 51 to the heating element HA1 of the heating element substrate HW1, which faces the chip bonding area BA1 of the substrate W1 (step S105). As a result, the temperature of the chip bonding area BA1 of the substrate W1 rises to a preset bonding temperature.

[0040] Next, when the chip bonding area BA1 is maintained at the bonding temperature, the bonding apparatus 1 calculates the relative positional deviation between the chip CP and the substrate W1 while they are not in contact with each other (step S106). Here, the control unit 90 of the bonding apparatus 1 first acquires captured images GAa and GAb (see FIG. 13A) of the two chips CP and the substrate W1 in a non-contact state from the imaging units 35a and 35b with the bonding surface W1f of the substrate W1 and the bonding surface CPf of the chip CP facing each other. Then, based on the two captured images GAa and GAb, the control unit 90 calculates the positional deviations Δx, Δy, and Δθ of the chip CP and the substrate W1 in the X direction, the Y direction, and the rotational direction around the Z axis, respectively. Specifically, the control unit 90 calculates the positional deviations Δxa and Δya (see FIG. 13B) using a vector correlation method based on the captured image GAa obtained by simultaneously reading alignment marks MC1a and MW1a spaced apart in the Z direction, for example. Similarly, the control unit 90 calculates the misalignment amounts Δxb and Δyb using the vector correlation method based on the captured image GAb obtained by simultaneously reading the alignment marks MC1b and MW1b spaced apart in the Z direction. Then, the control unit 90 calculates the misalignment amounts Δx, Δy, and Δθ in the horizontal direction between the chip CP and the substrate W1 based on the misalignment amounts Δxa, Δya, Δxb, and Δyb.

[0041] 15, the bonding apparatus 1 then calculates a correction amount and a correction direction for moving the chip CP relative to the substrate W1 based on the calculated misalignment amounts Δx, Δy, and Δθ so as to eliminate the misalignment of the chip CP with respect to the substrate W1 (step S107). The bonding apparatus 1 then moves the chip CP by the calculated correction amount in the calculated correction direction while the chip CP and the substrate W1 are not in contact with each other (step S108). The bonding apparatus 1 then brings the chip CP into contact with the substrate W1, and then, while heating the chip CP and the substrate W1, applies pressure to the chip CP in a direction pressing the chip CP against the substrate W1, thereby bonding the chip CP to the substrate W1 (step S109). After bonding the chip CP to the substrate W1, the bonding apparatus 1 moves the head 33H to the retracted position.

[0042] Next, the bonding apparatus 1 stops irradiating the heating substrate HW1 with light from the substrate heating light source 51 (step S110), thereby cooling the chip bonding area BA1 of the substrate W1 to a temperature lower than the bonding temperature.

[0043] Next, the bonding apparatus 1 determines whether all the chips CP have been bonded to the chip bonding areas on the substrate W1 (step S111). If the bonding apparatus 1 determines that there is a chip bonding area to which no chip CP has been bonded (step S111: No), it causes the head 33H to hold one chip CP again (step S101), and then executes the processes from step S102 onwards. On the other hand, if the bonding apparatus 1 determines that all the chips CP have been bonded to the chip bonding areas on the substrate W1 (step S111: Yes), it ends the bonding process.

[0044] As described above, according to the bonding apparatus 1 of this embodiment, by performing a parallelism adjustment step using the dummy chip CPD, parameter information indicating parameters that reflect the attitude of the head 33H that can offset the tilt of the stage 315 at each position where the stage 315 is placed is stored in advance in the parameter storage unit 931, and in the bonding step, the chip CP is bonded to the substrate W1 while adjusting the attitude of the head 33H based on the parameter information stored in the parameter storage unit 931. Therefore, even if the tilt of the stage 315 changes depending on the position where the stage 315 is placed, the chip CP can be bonded to the substrate W1 with high positional accuracy.

[0045] Conventionally, the heater that heats the stage 315 had to maintain a constant temperature so that the metal bumps arranged in the chip bonding area of ​​the substrate W1 would not melt. In contrast, the bonding apparatus 1 according to this embodiment has the advantage of being able to rapidly increase and decrease the temperature of the chip bonding area of ​​the substrate W1 held on the stage 315, even in a so-called chip-on-wafer configuration.

[0046] Incidentally, if the substrate W1 is made of Si and the wavelength band of the light emitted from the substrate heating light source 51 is in the infrared region, even if the light emitted from the substrate heating light source 51 is directly irradiated onto the chip bonding area BA1 of the substrate W1, much of the light will pass through the substrate W1, and there is a risk that the chip bonding area BA1 will not be heated efficiently. On the other hand, if the chip bonding area BA1 of the substrate W1 has a metal area made of metal such as a conductive pattern, even if the light emitted from the substrate heating light source 51 is directly irradiated onto the chip bonding area BA1 of the substrate W1, much of the light will be reflected by the metal area, and in this case too, there is a risk that the chip bonding area BA1 will not be heated efficiently. In contrast, in the bonding apparatus 1 according to the present embodiment, while the substrate W1 is held on the heater substrate HW1, light emitted from the substrate heating light source 51 is irradiated onto the heater HA1 of the heater substrate HW1, causing the heater HA1 to generate heat, and the heat generated by the heater HA1 is transferred to the chip bonding area BA1 of the substrate W1, thereby heating the chip bonding area BA1. This allows the energy of the light radiated from the substrate heating light source 51 to be efficiently converted into heat that is transferred to the chip bonding area BA1, thereby allowing the chip bonding area to be efficiently heated.

[0047] Although the embodiments of the present invention have been described above, the present invention is not limited to the configurations of the above-described embodiments. For example, if a reflective surface is formed on the tip tool 411 of the head 33H, the laser sensor 71 may measure the distances between a plurality of predetermined locations on the reflective surface of the head 33H and the substrate W1, the heater substrate HW1 held on the stage 315, or the stage 315 using laser light when the head 33H does not hold a tip CP and the reflective surface provided on the tip tool 411 of the head 33H faces the stage 315.

[0048] In the embodiment, an example has been described in which the heating unit 415 is a ceramic heater, a coil heater, or the like. However, the heating unit 415 is not limited to this, and may heat the chip CP by irradiating it with light. In this case, for example, the entire head 33H may be made of a light-transmitting material, and may further include a chip-heating light source that heats the chip CP held by the head 33H by irradiating it with light via the head 33H.

[0049] 16, for example, a heater substrate HW2 may include a base material HW20 and a land-shaped heater element HA1 having a predetermined thickness and protruding from one side of the base material HW20. Through holes Ho20 are formed in the base material HW20 in the thickness direction of the base material HW20 in regions between the heater elements HA1. In this case, when the heater substrate HW2 holds the substrate W1, a gap GAP1 is formed between the heater substrate HW2 and the substrate W1. The bonding apparatus 1 may also include a stage 2315 having a suction hole 2315a formed in a portion facing the through hole Ho1 of the heater substrate HW2 when the heater substrate HW2 is placed thereon, and a suction unit 2325 that sucks gas present in the gap GAP1 through the through hole Ho20 of the heater substrate HW2 and the suction hole 2315a formed in the stage 2315 when the heater substrate HW2 holds the substrate W1. Here, a suction holding mechanism is configured in which the through hole Ho1, the suction hole 2315a and the suction portion 2325 reduce the pressure in the gap GAP1 region, thereby suction-holding the substrate W1 onto the heating element substrate HW2.

[0050] In the embodiment, an example in which the heater substrate HW1 is interposed between the stage 315 and the substrate W1 has been described. However, this is not limiting, and the stage itself may have the same function as the heater substrate HW1. In this case, the stage may include a plate-shaped base made of a transparent material and a heater that absorbs light and generates heat, and is provided in a portion of the substrate facing the chip bonding area while holding the substrate W1 on one side of the base in the thickness direction. The substrate heating light source 51 may irradiate the heater on the stage with light to heat the heater, thereby heating the chip bonding area of ​​the substrate W1 held on the stage, facing the heater.

[0051] In the embodiment, the heating element HA1 of the heating element substrate HW1 may be disposed at a position facing a bonding portion where the chip CP is bonded to the substrate W1 in the chip bonding area BA1 of the substrate W1 when the substrate W1 is held on the heating element substrate HW1. Specifically, the heating element HA1 may be disposed at a position facing a portion where a metal bump is provided in the chip bonding area BA1 of the substrate W1.

[0052] In an embodiment, as shown in FIG. 17, for example, the shielding member 4521 may be configured to shield the light emitted from the substrate heating light source so that it is irradiated only onto at least the bonding portion where the chip CP is bonded within the chip bonding area BA1 of the substrate W1, i.e., the metal pad PADW portion within the chip bonding area BA1 that is bonded to the metal bump PADCP of the chip CP.

[0053] In the embodiment, an example has been described in which the imaging units 35a and 35b are arranged on the side of the head 33H opposite the stage unit 31. However, the arrangement of the imaging units 35a and 35b is not limited to this. For example, as in a bonding apparatus 3001 shown in FIG. 18, an imaging unit 3039 may be provided between the stage unit 31 and the bonding unit 33 having the head 33H. Note that in FIG. 18, the same components as those in the embodiment are denoted by the same reference numerals as in FIG. 1. The imaging unit 3039 is arranged between the substrate W1 and the chip CP when aligning the relative position of the chip CP with respect to the substrate W1, and retracts to a preset retract position when the chip CP is brought close to the substrate W1 for bonding.

[0054] The imaging unit 3039 includes an imaging head 3394, an imaging head driver 3395 that drives the imaging head 3394 in a direction perpendicular to the Z-axis direction as indicated by arrow AR3005, two imaging units 35a and 35b, and optical path conversion members 3352 and 3353. The optical path conversion members 3352 and 3353 are members having two mirror surfaces 3352a and 3353a. The optical path conversion member 3353 converts the propagation direction of light propagating in a direction along the Z-axis perpendicular to the mounting surface W1f of the circuit board W1 to a direction along the X-axis perpendicular to the Z-axis direction. As shown in FIG. 19 , the imaging head 3394 is box-shaped and holds the optical path conversion members 3352 and 3353 with the optical path conversion members 3352 and 3353 housed inside. Furthermore, openings 3394a are formed in the portions of the side walls of the imaging head 3394 facing each other in the Y-axis direction where the imaging units 35a and 35b are fixed, for allowing light from the imaging units 35a and 35b to enter the optical path conversion member 3352 and for allowing light reflected by the optical path conversion member 3352 to enter the imaging units 35a and 35b. Furthermore, an opening 3394b is formed in the upper wall on the +Z direction side of the imaging head 3394, for allowing light reflected by the chip CP to enter the optical path conversion member 3353 and for allowing light reflected by the optical path conversion member 3353 to exit toward the chip CP when the chip CP is held by the head 33H. A protective plate 3355 made of a transparent material is fitted inside the opening 3394b to prevent foreign matter from entering the optical path conversion member 3353 from vertically above. In addition, an opening 3394c is formed on the bottom wall on the -Z side of the imaging head 3394, which allows light reflected by the substrate W1 arranged on the -Z side of the imaging head 3394 to enter the optical path conversion member 3353 and allows light reflected by the optical path conversion member 3353 to exit toward the substrate W1.

[0055] The two imaging units 35a, 35b each capture images of the alignment marks MW1a, MW1b provided on the substrate W1 and the alignment marks MC1a, MC1b provided on the chip CP from the +Y direction side of the optical path conversion member 3353 while moving the optical path conversion member 3353, as indicated by arrow AR3051 in Figure 20(A). Illumination light emitted in the Y axis direction from the coaxial illumination systems of the imaging units 35a, 35b is reflected by the mirror surface 3352a of the optical path conversion member 3352, and its traveling direction is changed to the -X direction. The light reflected by the optical path conversion member 3352 travels toward the optical path conversion member 3353, and is reflected by the mirror surface 3353a of the optical path conversion member 3353, and its traveling direction is changed to the +Z direction and the -Z direction. The light reflected by the optical path conversion member 3353 travels toward the imaging target portions where alignment marks MW1a, MW1b, MC1a, and MC1b for the chip CP and substrate W1 held by the head 33H are provided, and is reflected by each imaging target portion. The reflected light from each imaging target portion of the chip CP and substrate W1 travels toward the optical path conversion member 3353, is reflected again by the mirror surface 3353a of the optical path conversion member 3353, and its traveling direction is changed to the +X direction, travels toward the optical path conversion member 3352, and is reflected by the mirror surface 3352a of the optical path conversion member 3352. The light reflected by the optical path conversion member 3352 then reaches the imaging units 35a and 35b. Furthermore, light emitted from the imaging unit 3039 and transmitted through the imaging target portions of the substrate W1 and the chip CP also travels toward the optical path conversion member 3353, is reflected again by the mirror surface 3353a of the optical path conversion member 3353, has its traveling direction changed to the +X direction, travels toward the optical path conversion member 3352, and is reflected by the mirror surface 3352a of the optical path conversion member 3352. The light reflected by the optical path conversion member 3352 then reaches the imaging units 35a and 35b. In this way, the imaging units 35a and 35b acquire image data GAL and GAR of the imaging target portions of the chip CP and the substrate W1, respectively, as shown in FIG.

[0056] In the embodiment, the substrate heating light source 51 may continuously irradiate the substrate W1 with light to maintain the substrate W1 at a constant temperature. In this case, the heating unit 415 provided in the head 33H may raise or lower the temperature of the chip CP. For example, the substrate heating light source 51 may irradiate the substrate W1 with light to maintain the temperature of the chip bonding area of ​​the substrate W1 at 150°C to 200°C, and the heating unit 415 may raise the temperature of the chip CP to 150°C to 250°C to melt the solder or the like provided on the chip CP, and then lower the temperature of the chip CP.

[0057] In the embodiment, the metal bumps provided on the chip bonding area of ​​the substrate W1 or the chip CP are not limited to those made of a material that melts when heated, such as solder. For example, the metal bumps may be made of Au, Cu, or the like. In this case, bonding is possible by heating the metal bumps to about 200°C, and bonding at a lower temperature is possible by performing a surface activation process.

[0058] The present invention allows various embodiments and modifications without departing from the broad spirit and scope of the present invention. Furthermore, the above-described embodiments are intended to explain the present invention and do not limit the scope of the present invention. In other words, the scope of the present invention is defined by the claims, not the embodiments. Various modifications made within the scope of the claims and within the scope of the meaning of the invention equivalent thereto are considered to be within the scope of the present invention. [Industrial Applicability]

[0059] The present invention is suitable for manufacturing, for example, CMOS image sensors, memories, computing elements, and MEMS. [Explanation of symbols]

[0060] 1: bonding device, 31: stage unit, 33: bonding section, 33H: head, 34: Z-direction drive section, 35a, 35b, 61: imaging section, 36: head drive section, 37: θ-direction drive section, 38: linear guide, 51: substrate heating light source, 53: light source drive section, 71: laser sensor, 90: control section, 311: X-direction movement section, 311a, 313a: opening, 313: Y-direction movement section, 315, 2315: stage, 321: X-direction drive section , 323: Y-direction drive unit, 331: Z-axis direction moving member, 332: First disk member, 333: Piezo actuator, 334: Second disk member, 334a, 334b: Hole portion, 336: Mirror fixing member, 337: Mirror, 337a, 337b: Inclined surface, 351a, 351b: Image sensor, 352a, 352b: Optical system, 361: Rotating member, 363: Camera Z-direction drive unit, 365: Camera F-direction drive unit, 411: Tip tool, 413: head main body, 413a, 413b, 415a, 415b: hollow section, 415: heating section, 521, 4521: shielding member, 522: thermocouple, 523: temperature measurement section, 911: attitude control section, 912: horizontal movement control section, 913: elevation control section, 931: parameter storage section, 2315a: suction hole, 2325: suction section, 3039: imaging unit, 3394: imaging head, 3394b, 3394c: openings, 3395: imaging head drive part, 3352, 3353: optical path conversion member, 3352a, 3353a: mirror surface, A1: substrate holding area, BA1: chip bonding area, CP: chip, CPD: dummy chip, CPf, W1f: bonding surface, GAa, GAb: photographed image, Ho20: through hole, HW1, HW2: heating element substrate, HW10, HW20: base material, MC1a, MC1b, MW1a, MW1b: alignment mark, SA1, SA2, SA45: sub-area, W1: substrate

Claims

1. a stage formed from a light-transmitting material and configured to hold a substrate; a head that brings the chip close to a chip bonding area on the substrate held by the stage and brings the chip into contact with the chip bonding area, thereby bonding the chip to the substrate; a substrate heating light source for heating the chip bonding region of the substrate held on the stage by continuously irradiating light via the stage onto the chip bonding region facing the chip to be brought into contact with the substrate when the chip is brought into contact with the substrate; Bonding equipment.

2. the stage has a base material formed into a plate shape from a transparent material, and a heating element that absorbs light and generates heat, the heating element being provided in a portion of the substrate facing the chip bonding region while holding the substrate on one surface side in a thickness direction of the base material; the substrate heating light source irradiates the heating element with light to generate heat from the heating element, thereby heating the chip bonding region of the substrate held on the stage that faces the heating element to be generated; The joining device according to claim 1 .

3. a heat generating substrate including a base material formed into a plate shape from a transparent material, and a heat generating element that absorbs light and generates heat, the heat generating element being provided in a portion of the substrate facing the chip bonding area while holding the substrate on one side in the thickness direction of the base material; the substrate heating light source irradiates the heating element with light to heat the heating element, thereby heating the chip bonding region of the substrate held on the heating element substrate, which faces the heating element to be heated; The joining device according to claim 1 .

4. the head is formed from a light-transmitting material; a tip heating light source that heats the tip by irradiating the tip held by the head with light via the head; The joining device according to any one of claims 1 to 3.

5. the head has a heater that heats the tip held by the head; The joining device according to any one of claims 1 to 3.

6. a shielding member interposed between the stage and the light source for blocking light emitted from the light source from being directed toward any area other than the chip bonding area to be heated; The joining device according to any one of claims 1 to 3.

7. the shielding member shields the chip bonding region so that light emitted from the substrate heating light source is irradiated onto at least a bonding portion where the chip is bonded. The joining device according to claim 6.

8. a temperature measurement unit that measures the temperature of the shielding member heated by light using a thermocouple disposed in the shielding member; a light source driver that adjusts the intensity of the light emitted from the light source based on the measured temperature of the shielding member so that the temperature of the chip bonding region is maintained at a preset temperature. The joining device according to claim 7.

9. the heating element is disposed in the chip bonding region at a position facing a bonding portion where the chip is bonded to the substrate; The joining device according to claim 2 or 3.

10. A metal bump is provided in the chip bonding area. The joining device according to any one of claims 1 to 3.

11. the heating element is a land-like element having a predetermined thickness, and is provided to protrude from the one surface side of the base material, a suction holding mechanism that suction-holds the substrate to the heat generating substrate by reducing the pressure in a gap formed between the heat generating substrate and the substrate while the heat generating substrate is holding the substrate; The joining device according to claim 3 .

12. a laser sensor that measures the distance between the chip or a plurality of preset locations on the reflecting surface of the head, the substrate, a base material formed into a plate shape from a transparent material and held by the stage, and a heat generating element substrate having a heat generating element that absorbs light and generates heat and is provided in a portion of the substrate facing the chip bonding region in a state where the substrate is held on one side in the thickness direction of the base material, or the stage, using a laser light; and a head attitude adjustment unit that adjusts the attitude of the head based on the measured distance so that the surface of the chip facing the stage or the reflecting surface is parallel to the surface of the substrate, the heating element substrate, or the surface of the stage facing the head. The joining device according to claim 1 or 2.

13. the chip is provided with at least one first alignment mark; the substrate is provided with at least one second alignment mark corresponding to the at least one first alignment mark; An imaging unit; a stage driving unit that moves the stage relative to the head, a control unit that controls the stage driving unit to calculate a relative positional deviation between the chip and the substrate from a captured image obtained by simultaneously capturing an image of the at least one first alignment mark and a second alignment mark corresponding to each of the at least one first alignment mark by the imaging unit, and correct the relative position of the chip with respect to the substrate based on the calculated positional deviation by moving the substrate relatively to the chip in a direction parallel to a bonding surface of the substrate to which the chip is bonded and in which the positional deviation decreases. The joining device according to any one of claims 1 to 3.

14. a chip bonding region heating step of heating a chip bonding region, in which a chip on a substrate facing the chip on the substrate is bonded, by continuously irradiating the chip bonding region with light via the stage, the chip being held by the stage being made of a light-transmitting material, when the chip is brought into contact with the substrate; a bonding step of bonding the chip to the substrate, Joining method.

15. In the bonding step, the irradiation of the substrate with light is stopped and the substrate is cooled. The joining method according to claim 14.

16. the stage has a base material formed into a plate shape from a transparent material, and a heating element that absorbs light and generates heat, the heating element being provided in a portion of the substrate facing the chip bonding region while holding the substrate on one surface side in a thickness direction of the base material; In the chip bonding region heating step, the heating element is irradiated with light to heat the heating element, thereby heating the chip bonding region on the substrate that faces the heating element to be heated. The joining method according to claim 14 or 15.

17. In the chip bonding region heating step, a heater substrate having a base material formed into a plate shape from a transparent material and a heater element that absorbs light and generates heat and is provided in a portion of the base material facing the chip bonding region while the base material is held on one side in the thickness direction of the base material is held on the stage, and while the base material is held on the side of the heater substrate opposite the stage side, light is irradiated onto the heater element to generate heat, thereby heating the chip bonding region of the substrate held on the heater substrate that faces the heater element to be generated. The joining method according to claim 14 or 15.

18. a chip heating step of heating the chip by irradiating light onto the chip through a head formed of a light-transmitting material and holding the chip in the state where the chip is held by the head, The joining method according to claim 14 or 15.

19. The method further includes a tip heating step of heating the tip with a heater while the tip is held on a head having a heater. The joining method according to claim 14 or 15.

20. In the chip bonding region heating step, a shielding member is used to block light from traveling toward areas other than the chip bonding region that is the target of heating. The joining method according to claim 14 or 15.

21. In the chip bonding region heating step, a thermocouple disposed in the shielding member measures the temperature of the shielding member heated by light, and adjusts the intensity of the light irradiated onto the chip bonding region based on the measured temperature of the shielding member so that the temperature of the chip bonding region is maintained at a preset temperature. The joining method according to claim 20.

22. The chip bonding area is provided with a metal bump that melts when heated. The joining method according to claim 14 or 15.

Images