Chamfered shape determination method, chamfered shape determination device, and chamfering system

Abstract

To provide a chamfered shape determination method capable of easily and appropriately determining chamfered shapes of a plurality of wafers.SOLUTION: The chamfered shape determination method includes a first determination step of determining, based on a measurement result of a chamfered shape of a first wafer, whether or not the chamfered shape is a target shape, and a second determination step of determining, in a case where it is determined in the first determination step that the chamfered shape is the target shape, whether or not chamfered shapes of remaining wafers are the target shape, and in the second determination step, it is determined that the chamfered shape is the target shape in a case where the following formula (1) is satisfied, and it is determined that the chamfered shape is not the target shape in a case where the formula (1) is not satisfied. B-A ≤ C (1) A: the maximum value or the average value of the absolute values of the vibration values of the chamfering wheel at the time of chamfering the first wafer B: the maximum value or the average value of the absolute values of the vibration values of the chamfering wheel at the time of chamfering the remaining wafers C: the threshold value SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to a chamfering shape determination method, a chamfering shape determination device, and a chamfering system. [Background technology]

[0002] BACKGROUND ART A chamfering device is known that chamfers a wafer by rotating a wafer and a chamfering wheel while bringing the wafer and the wheel into contact with each other (see, for example, Patent Document 1). The chamfering device described in Patent Document 1 detects vibration changes in the chamfering wheel (periphery precision grinding wheel) during chamfering, and if the vibration change exceeds a threshold, stops chamfering to perform truing of the chamfering wheel. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-78326 Summary of the Invention [Problem to be solved by the invention]

[0004] However, the allowable vibration value of the chamfering wheel that can chamfer the wafer to the target shape may change depending on the contact state between the wafer and the chamfering wheel, the shape of the outer periphery of the wafer, and the like. In a configuration that makes a judgment based on a threshold value, such as the chamfering device described in Patent Document 1, if the tolerance value becomes larger than the threshold value due to the contact state between the wafer and the chamfering wheel, there is a risk that the chamfer shape will be judged to be not the target shape even though it is the target shape.

[0005] An object of the present invention is to provide a chamfer shape determination method, a chamfer shape determination device, and a chamfering system that can easily and appropriately determine the chamfer shapes of multiple wafers. [Means for solving the problem]

[0006] The chamfer shape determination method of the present invention is a chamfer shape determination method for determining the chamfer shape of each wafer when multiple wafers are chamfered one by one using a chamfering wheel, and includes: a first vibration value detection step for detecting the vibration value of the chamfering wheel when chamfering a first wafer; a first determination step for determining whether the chamfer shape is a target shape based on the measurement results of the chamfer shape of the first wafer; a second vibration value detection step for detecting the vibration value of the chamfering wheel when chamfering the remaining wafers if the first determination step determines that the chamfer shape is the target shape; and a second determination step for determining whether the chamfer shapes of the remaining wafers are the target shape. The second determination step determines that the chamfer shape is the target shape if the following formula (1) is satisfied, and determines that the chamfer shape is not the target shape if the formula (1) is not satisfied. BA≦C … (1) A: The maximum or average absolute value of the vibration value of the chamfering wheel when chamfering the first wafer B: The maximum or average absolute value of the vibration value of the chamfering wheel when chamfering the remaining wafers. C: Threshold

[0007] In the chamfering shape determination method of the present invention, it is preferable that the wafers are each chamfered through a chamfering process having multiple stages, and the second determination process determines that the chamfered shape is the target shape if formula (1) is satisfied in all corresponding stages of the chamfering process of the first wafer and the remaining wafers, and determines that the chamfered shape is not the target shape if formula (1) is not satisfied in at least one stage of the chamfering process.

[0008] In the chamfering shape determination method of the present invention, it is preferable that the wafers are each chamfered through a chamfering process having multiple stages, and the second determination process determines that the chamfered shape is the target shape if formula (1) is satisfied in the final chamfering process of the chamfering processes of the first wafer and the remaining wafers, and determines that the chamfered shape is not the target shape if formula (1) is not satisfied.

[0009] The chamfer shape determination device of the present invention is a chamfer shape determination device that determines the chamfer shape of each wafer when multiple wafers are chamfered one by one using a chamfering wheel, and includes: a vibration sensor that detects the vibration value of the chamfering wheel when chamfering each wafer; a first determination unit that determines whether the chamfer shape is a target shape based on the measurement results of the chamfer shape of a first wafer; and a second determination unit that determines whether the chamfer shapes of the remaining wafers are the target shape if the first determination unit determines that the chamfer shape is the target shape; and the second determination unit determines that the chamfer shape is the target shape if the following formula (2) is satisfied, and determines that the chamfer shape is not the target shape if the formula (2) is not satisfied. BA≦C … (2) A: The maximum or average absolute value of the vibration value of the chamfering wheel when chamfering the first wafer B: The maximum or average absolute value of the vibration value of the chamfering wheel when chamfering the remaining wafers. C: Threshold

[0010] The chamfering system of the present invention includes a chamfering device that chamfers a plurality of wafers one by one using a chamfering wheel, and the chamfered shape determination device described above. [Brief explanation of the drawings]

[0011] [Figure 1] 1A and 1B are diagrams showing a schematic configuration of a chamfering device that constitutes a chamfering system according to an embodiment, in which (A) is a front view and (B) is a side view. [Figure 2]FIG. 2 is a block diagram of a control device constituting the chamfering system according to the embodiment. [Figure 3] 1 is a flowchart of a wafer chamfering method according to an embodiment. [Figure 4] 10 is a flowchart of a wafer chamfering method according to a modified example. [Figure 5] 1 is a graph showing the measurement results of the chamfered shape according to the example, where (A) shows the chamfered width on the back surface side, and (B) shows the chamfered width on the front surface side. [Figure 6] 10A and 10B are diagrams illustrating measurement results of vibration acceleration in each stage of the chamfering process according to the example. DETAILED DESCRIPTION OF THE INVENTION

[0012] [Embodiment] <Configuration of chamfering device> The configuration of a chamfering device according to an embodiment of the present invention will be described. 1(A) and 1(B) chamfers wafers W by a helical chamfering method. The chamfering system 1 includes a chamfering device 2 that chamfers multiple wafers W one by one using a chamfering wheel 221.

[0013] The chamfering device 2 includes a wafer rotation unit 21 that rotates the wafer W, a chamfering unit 22 that chamfers the wafer W, a relative movement unit 23 that moves the wafer rotation unit 21 toward or away from the chamfering unit 22, and a vibration sensor 24. Note that the components of the chamfering device 2 will be described based on the XYZ coordinate system shown in Figures 1(A) and 1(B). The X-axis direction is the movement direction of the wafer rotation unit 21. The Z-axis direction is the up-down direction.

[0014] The wafer rotation unit 21 includes a holder 211 that holds the back surface W1 of the wafer W, and a rotation drive unit 212 that rotates the holder 211.

[0015] The chamfering unit 22 includes a disk-shaped chamfering wheel 221 and a spindle 222 that rotates the chamfering wheel 221. A chamfering groove 221A is formed on the outer circumferential surface of the chamfering wheel 221. The chamfering groove 221A is formed in a shape that enables chamfering of the edge portion W11 on the back surface W1 side of the wafer W and the edge portion W21 on the front surface W2 side. The spindle 222 is fixed to a mount 223 so that a rotation axis 221C of the chamfering wheel 221 is inclined in the Y-axis direction with respect to an imaginary line V that extends in the vertical direction (Z-axis direction). Alternatively, the spindle 222 may be fixed to the mount 223 so that the rotation axis 221C is parallel to the imaginary line V.

[0016] The relative moving unit 23 moves the wafer rotating unit 21 along the X-axis direction so that the wafer rotating unit 21 approaches or moves away from the chamfering unit 22. Note that the relative moving unit 23 is not limited to a configuration that moves only the wafer rotating unit 21, but may be a configuration that moves only the chamfering unit 22 relative to the wafer rotating unit 21, or a configuration that moves both the wafer rotating unit 21 and the chamfering unit 22.

[0017] The vibration sensor 24 is provided on the base 223. The vibration sensor 24 detects vibration acceleration as vibration values ​​in the X-axis, Y-axis, and Z-axis directions of the chamfering wheel 221 transmitted via the spindle 222 and the base 223. The vibration sensor 24 may be provided at a position where it can detect vibrations of the chamfering wheel 221, and may be provided on the spindle 222, for example.

[0018] The chamfering system 1 further includes a shape measuring device 3 and a control device 4 shown in FIG.

[0019] 1(A), the shape measuring device 3 measures a chamfer width H1 of a chamfered portion W12 formed by chamfering an edge portion W11 on the back surface W1 side and a chamfer width H2 of a chamfered portion W22 formed by chamfering an edge portion W21 on the front surface W2 side as the chamfered shape of the wafer W. The chamfer widths H1 and H2 may be average values ​​of multiple locations on the chamfered portions W12 and W22.

[0020] The control device 4 is configured to be able to transmit and receive various types of information between the shape measuring device 3, the rotation drive unit 212, the spindle 222, the relative movement unit 23, and the vibration sensor 24. The control device 4 includes a storage unit 41 and a control unit 42.

[0021] The memory unit 41 stores various information related to the chamfering of the wafer W in a manner readable by the control unit 42. Examples of the various information related to the chamfering of the wafer W include the chamfering conditions, the target ranges of chamfer widths H1 and H2, the vibration acceleration of the chamfering wheel 221 during each stage of chamfering of each wafer W, and threshold values ​​Cx, Cy, and Cz of the maximum vibration acceleration difference in the X, Y, and Z axes, which will be described later. The target range is a standard range required by specification information of the wafer W that will ultimately become the product, and is set as the standard range required for the chamfering process.

[0022] The control unit 42 includes a chamfering control unit 421, a first determination unit 422, and a second determination unit 423. The vibration sensor 24, the first determination unit 422, and the second determination unit 423 constitute a chamfering shape determination device 5 that determines the chamfering shape of each wafer W.

[0023] The chamfering control unit 421 controls the rotation drive unit 212, the spindle 222, and the relative movement unit 23 of the chamfering device 2 to chamfer the plurality of wafers W. The first determination unit 422 determines, based on the measurement result of the chamfered shape of the first wafer W, whether or not the chamfered shape of the first wafer W is a target shape. When the first wafer W has the target shape, the second determination unit 423 determines whether the chamfered shapes of the remaining wafers W chamfered under the same chamfering conditions as the first wafer W are the target shape.

[0024] <Wafer chamfering method> Next, a method for chamfering the wafer W will be described. First, as shown in FIG. 3, the chamfering control unit 421 of the control device 4 chamfers the first wafer W among multiple wafers W manufactured under the same manufacturing conditions, and acquires the vibration acceleration of the chamfering wheel 221 from the vibration sensor 24 (step S1). In step S1, the chamfering control unit 421 controls the transfer device (not shown) to hold the first wafer W on the holder 211. The chamfering control unit 421 chamfers the wafer W based on the chamfering conditions stored in the memory unit 41, and also stores the vibration acceleration of the chamfering wheel 221 obtained from the vibration sensor 24 in the memory unit 41. In this embodiment, the chamfering process for each wafer W includes three chamfering stages. In each chamfering stage, chamfering is performed while the wafer W is rotated once. Control factors for each chamfering stage include the amount of pressure of the chamfering wheel 221 against the wafer W, the rotational speed of the chamfering wheel 221, and the rotational speed of the wafer W. The amount of pressure of the chamfering wheel 221 is 0 μm when the chamfering wheel 221 is in contact with the wafer W immediately before chamfering. The chamfering process for each wafer W may include one, two, or four or more chamfering stages.

[0025] The chamfering control unit 421 controls the transfer device to remove the chamfered first wafer W from the holder 211. The shape measuring device 3 measures the chamfered shape of the wafer W removed from the holder 211. The first determination unit 422 of the chamfer shape determination device 5 acquires the measurement results of the chamfer shape of the first wafer W from the shape measuring device 3 (step S2). Note that the first determination unit 422 may acquire the measurement results input by an operator using an input unit (not shown) of the control device 4.

[0026] The first determination unit 422 determines whether the chamfered shape of the first wafer W is the target shape (step S3). In step S3, the first judgment unit 422 judges that the chamfer shape is the target shape if both chamfer widths H1 and H2 are within the target range stored in the memory unit 41, and judges that the chamfer shape is not the target shape if at least one of the chamfer widths is outside the target range.

[0027] If it is determined that the chamfered shape of the first wafer W is not the target shape (step S3: NO), the chamfering control unit 421 does not chamfer the remaining wafers W. In this case, the operator adjusts the chamfering device 2 so that the chamfered shape of the next wafer W to be chamfered will be the target shape. On the other hand, if it is determined that the chamfered shape of the first wafer W is the target shape (step S3: YES), the second determination unit 423 of the chamfered shape determination device 5 calculates the maximum vibration accelerations Ax, Ay, and Az of the first wafer W at each stage of the chamfering process based on the vibration accelerations stored in the memory unit 41 (step S4). The maximum vibration accelerations Ax, Ay, and Az are the maximum absolute values ​​of the vibration accelerations in the X-, Y-, and Z-axis directions, respectively.

[0028] The chamfering control unit 421 acquires the vibration acceleration of the chamfering wheel 221 from the vibration sensor 24 while chamfering the next wafer W under the same chamfering conditions as the first wafer W (step S5). Similar to the processing of step S1, the chamfering control unit 421 stores the acquired vibration acceleration of the chamfering wheel 221 in the memory unit 41.

[0029] The second determination unit 423 determines (step S6) the maximum vibration accelerations Bx, By, and Bz of the wafer W chamfered in step S5 at each stage of the chamfering process, based on the vibration accelerations stored in the memory unit 41. The maximum vibration accelerations Bx, By, and Bz are the maximum absolute values ​​of the vibration accelerations in the X-, Y-, and Z-axis directions, respectively. The process of determining the maximum vibration accelerations Ax, Ay, Az in step S4 may be performed in parallel with the process of step S5, or may be performed after step S5 or step S6.

[0030] The second determination unit 423 determines whether all of the following formulas (1A) to (1C) are satisfied in all of the corresponding stages of the chamfering process for the first wafer W and the second and subsequent wafers W (step S7). In this embodiment, the corresponding stages of the chamfering process are the first stage of the chamfering process for the first wafer W and the first stage of the chamfering process for the second and subsequent wafers W, which have the same chamfering conditions, the second stage of the chamfering process for the first wafer W and the second stage of the chamfering process for the second and subsequent wafers W, which have the same chamfering conditions, and the third stage of the chamfering process for the first wafer W and the third stage of the chamfering process for the second and subsequent wafers W, which have the same chamfering conditions. The threshold values ​​Cx, Cy, and Cz are set to values ​​that prevent the chamfered shape from becoming the target shape if formulas (1A), (1B), and (1C) are not satisfied, and are set to values ​​that are, for example, 5 m / sec 2 More than 10m / sec 2 The threshold values ​​Cx, Cy, and Cz are set as follows: The threshold values ​​Cx, Cy, and Cz may or may not be the same value. Bx-Ax≦Cx … (1A) By-Ay≦Cy … (1B) Bz-Az≦Cz … (1C) Cx: Threshold for the difference in maximum vibration acceleration in the X-axis direction Cy: Threshold for the difference in maximum vibration acceleration in the Y-axis direction Cz: Threshold for the difference in maximum vibration acceleration in the Z-axis direction

[0031] The formulas (1A) to (1C) correspond to subordinate concepts of the following formula (1). BA≦C … (1) A: Maximum absolute value of the vibration value of the chamfering wheel 221 when chamfering the first wafer W B: Maximum absolute value of vibration value of chamfering wheel 221 when chamfering the remaining wafers W C: Threshold

[0032] If the second judgment unit 423 judges that all of the formulas (1A) to (1C) are satisfied in all stages of the chamfering process (step S7: YES), that is, if the difference in the maximum vibration acceleration in all of the X-, Y-, and Z-axis directions in all stages of the chamfering process is equal to or less than the threshold value, it judges that the chamfered shape of the wafer W chamfered in step S5 is the target shape (step S8). On the other hand, if the second judgment unit 423 determines that at least one of the formulas (1A) to (1C) is not satisfied in at least one stage of the chamfering process (for example, the third stage of the first wafer and the third stage of the chamfering process of the second wafer or later) (step S7: NO), it determines that the chamfered shape of the wafer W chamfered in step S5 is not the target shape (step S9).

[0033] After the processing of step S8 or step S9 is performed, the chamfering control unit 421 determines whether or not chamfering of all wafers W is completed (step S10). When the chamfering control unit 421 determines that chamfering of all wafers W has been completed (step S10: YES), the chamfering process ends. On the other hand, if the chamfering control unit 421 determines that chamfering of all wafers W has not been completed (step S10: NO), it chamfers the next wafer W while acquiring the vibration acceleration of the chamfering wheel 221 from the vibration sensor 24 (step S5).

[0034] As described above, when chamfering a plurality of wafers W manufactured under the same manufacturing conditions under the same chamfering conditions, the chamfering shape determination device 5 determines whether the first wafer W has the target shape based on the measurement results of the chamfering shape. Therefore, even if the allowable value of the vibration acceleration of the chamfering wheel 221, which can make the chamfer shape into the target shape, changes for each manufacturing batch of wafers W due to the contact state between the wafer W and the chamfering wheel 221, it is possible to appropriately determine whether the chamfering shape of the first wafer W has the target shape. The chamfering shape determination device 5 determines whether the remaining wafers W have the target shape based on whether the chamfering of the remaining wafers W has been performed in a state that satisfies all of the formulas (1A) to (1C). In this way, since the determination is made based on the maximum vibration accelerations Ax, Ay, and Az when the chamfering shape of the first wafer W has the target shape, even if the allowable value of the vibration acceleration of the chamfering wheel 221 changes for each manufacturing batch, it can be easily and appropriately determined whether the chamfering shapes of the remaining wafers W have the target shape without measuring the shape.

[0035] [Variations] The chamfering control unit 421 and the chamfered shape determination device 5 may chamfer the wafer W based on the chamfering method for the wafer W shown in FIG. As shown in FIGS. 3 and 4, the method for chamfering the wafer W in the modified example differs from the embodiment in that steps S21, S22, and S23 are performed instead of steps S4, S6, and S7. If it is determined in step S21 that the chamfered shape of the first wafer W is the target shape, the second determination unit 423 calculates the maximum vibration accelerations Ax, Ay, and Az in the final chamfering process of the first wafer W. In step S22, the second determination unit 423 calculates the maximum vibration accelerations Bx, By, and Bz in the final chamfering process of the wafer W chamfered in step S5. In step S23, the second determination unit 423 determines whether all of the above formulas (1A) to (1C) are satisfied in the final chamfering process. If it is determined that all of them are satisfied (step S23: YES), the second determination unit 423 determines that the chamfered shape is the target shape (step S8), and if it is determined that at least one of them is not satisfied (step S23: NO), the second determination unit 423 determines that the chamfered shape is not the target shape (step S9). When chamfering one wafer W, if at least one of the above formulas (1A) to (1C) is not satisfied in a stage prior to the final stage, that is, if the vibration of the chamfering wheel 221 becomes too large, this excessive vibration state is maintained until the final stage. By performing the processing of the modified example shown in Fig. 4, the chamfered shapes of multiple wafers W can be appropriately determined with a smaller amount of calculation than the processing of the embodiment shown in Fig. 3.

[0036] In the method for chamfering the wafer W in the embodiment and the modified example, formulas (1A) to (1C) are used, but one or two of these formulas may be used. In the method for chamfering the wafer W according to the embodiment and the modified example, vibration acceleration is used as the vibration value in the formulas (1A) to (1C), but vibration displacement may also be used as the vibration value. In the method for chamfering the wafer W according to the embodiment and the modified example, the maximum vibration acceleration in each stage of the chamfering process is used in the formulas (1A) to (1C), but the average value of the vibration acceleration or the average value of the vibration may also be used. In the chamfering method for wafers W in the embodiment and modified examples, whether the chamfered shape is the target shape is determined each time the remaining wafers W are chamfered, but it is also possible to determine whether the chamfered shape is the target shape after all the remaining wafers W have been chamfered. [Example]

[0037] Next, examples of the present invention will be described, but the present invention is not limited to these examples.

[0038] First, five wafers W manufactured under the same manufacturing conditions and the chamfering system 1 of the embodiment were prepared. The diameter of the wafer W was 300 mm. A three-stage chamfering process was set as the chamfering process for the wafer W. The pressure amounts and the rotational speeds of the wafer W and the chamfering wheel 221 in the first to third stages of the chamfering process were set as shown in Table 1 below. At each stage of the chamfering process, the wafer W was rotated once while chamfering, and the vibration acceleration in only the X-axis direction was detected, and the chamfered shape was determined based only on the above formula (1A). 2 was set to.

[0039] [Table 1]

[0040] First, after the first wafer W was chamfered, a shape measuring device (product name: Edge Profiler, model number: LEP-2200, manufacturer: Kobelco Research Institute, Inc.) was used to measure the chamfer widths H1 and H2 at eight locations on the chamfered portion W12 on the back surface W1 and the chamfered portion W22 on the front surface W2. The measurement locations for the chamfer widths H1 and H2 were 5°, 45°, 90°, 135°, 180°, 225°, 270°, and 315°, with the notch position of the wafer W being set at 0°. The measurement results for chamfer width H1 are shown in Figure 5(A), the measurement results for chamfer width H2 are shown in Figure 5(B), and the measurement results for vibration acceleration at each stage of the chamfering process are shown in Figure 6. Note that "p" in Figures 5(A) and (B) is the reference value for chamfer width H1 or chamfer width H2. Also, "D1," "D2," and "D3" in Figure 6 represent the first, second, and third stages of the chamfering process, respectively.

[0041] The chamfered shape of the first wafer W was the target shape. Since the chamfered shape of the first wafer W was the target shape, the second to fifth wafers W were chamfered in sequence, and the chamfer widths H1 and H2 of each wafer W were measured. As shown in Figures 5(A) and 5(B), the chamfer widths H1 and H2 of the third to fifth wafers W were almost the same as those of the first wafer W, and the chamfer shapes were the target shapes. On the other hand, the chamfer widths H1 and H2 of the second wafer W were larger than those of the first wafer W, and the chamfer shape was not the target shape.

[0042] As shown in Figure 6, the maximum vibration acceleration in the first and second stages for the second to fifth wafers was almost the same as that for the first wafer W. In addition, the maximum vibration acceleration in the third stage for the third to fifth wafers was also almost the same as that for the first wafer W. However, the maximum vibration acceleration in the third stage for the second wafer W was larger than that for the first wafer W. The maximum vibration acceleration Ax of the first wafer W, the maximum vibration acceleration Bx of the second to fifth wafers W in the third stage, the chamfer shape judgment results based on formula (1A) (difference in maximum vibration acceleration), and the chamfer shape judgment results based on the shape measurement results are shown in Table 2 below. In Table 2, "OK" indicates that the chamfer shape is the target shape, and "NG" indicates that the chamfer shape is not the target shape.

[0043] [Table 2]

[0044] As shown in Table 2, for the second to fifth wafers W, the results of determining the chamfered shape based on formula (1A) and the results of determining the chamfered shape based on the shape measurement results were consistent. From this, it was confirmed that if it is determined based on the shape measurement results that the chamfer shape of the first wafer W is the target shape, it is possible to appropriately determine whether the chamfer shapes of the remaining wafers W are the target shape based on equation (1A) without performing shape measurement. [Explanation of symbols]

[0045] 1... chamfering system, 2... chamfering device, 5... chamfering shape determination device, 24... vibration sensor, 221... chamfering wheel, 421... chamfering control unit, 422... first determination unit, 423... second determination unit, W... wafer.

Claims

1. A chamfering shape determination method for determining the chamfered shape of each wafer when a plurality of wafers are chamfered one by one using a chamfering wheel, comprising: a first vibration value detection step of detecting a vibration value of the chamfering wheel when chamfering a first wafer; a first determination step of determining whether the chamfer shape of the first wafer is a target shape based on a measurement result of the chamfer shape of the first wafer; a second vibration value detection step of detecting a vibration value of the chamfering wheel when chamfering the remaining wafers if the first determination step determines that the shape is the target shape; a second determination step of determining whether the chamfered shape of the remaining wafer is the target shape, the second determination step determines that the chamfer shape is the target shape if the following formula (1) is satisfied, and determines that the chamfer shape is not the target shape if the formula (1) is not satisfied. B-A≦C … (1) A: The maximum or average absolute value of the vibration value of the chamfering wheel when chamfering the first wafer. B: The maximum or average absolute value of the vibration value of the chamfering wheel when chamfering the remaining wafers C: Threshold

2. 2. The chamfer shape determination method according to claim 1, The wafers are chamfered in a plurality of stages, the second determination step determines that the chamfer shape is the target shape if the formula (1) is satisfied in all chamfering process stages corresponding to each other of the first wafer and the remaining wafers, and determines that the chamfer shape is not the target shape if the formula (1) is not satisfied in at least one chamfering process stage.

3. 2. The chamfer shape determination method according to claim 1, The wafers are chamfered in a plurality of stages, the second determination step determines that the chamfer shape is the target shape if the formula (1) is satisfied in the final chamfering step of the chamfering steps of the first wafer and the remaining wafers, and determines that the chamfer shape is not the target shape if the formula (1) is not satisfied.

4. A chamfering shape determination device that determines the chamfered shape of each wafer when a plurality of wafers are chamfered one by one using a chamfering wheel, a vibration sensor for detecting a vibration value of the chamfering wheel when chamfering each of the wafers; a first determination unit that determines whether the chamfered shape of a first wafer is a target shape based on a measurement result of the chamfered shape of the first wafer; a second determination unit that, when the first determination unit determines that the chamfered shape is the target shape, determines whether the chamfered shapes of the remaining wafers are the target shape, The second determination unit determines that the chamfered shape is the target shape if the following formula (2) is satisfied, and determines that the chamfered shape is not the target shape if the formula (2) is not satisfied. B - A ≦ C ... (2) A: The maximum or average absolute value of the vibration value of the chamfering wheel when chamfering the first wafer. B: The maximum or average absolute value of the vibration value of the chamfering wheel when chamfering the remaining wafers C: Threshold

5. a chamfering device that chamfers a plurality of wafers one by one using a chamfering wheel; A chamfering system comprising: the chamfering shape determination device according to claim 4.

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