Plasma processing apparatus and plasma processing method

Abstract

To provide a plasma processing device and a plasma processing method capable of improving processing accuracy.SOLUTION: A plasma processing apparatus includes a stage having a placement surface on which a substrate can be placed, an active species emission unit configured to emit active species or an active species raw material for performing plasma processing on the substrate toward the stage, a laser light generating unit configured to form a laser sheet in an observation region including at least a part of a region between the placement surface and the active species emission unit, and a detection unit configured to detect excited luminescence generated in the observation region. The quenching length of the excitation emission is 20 nanoseconds or less.SELECTED DRAWING: Figure 2A

Description

[Technical Field]

[0001] The present invention relates to a plasma processing apparatus and a plasma processing method. [Background technology]

[0002] Substrates such as semiconductor substrates are often subjected to plasma processing (see, for example, Patent Document 1). Plasma processing includes, for example, etching and film deposition using plasma. Such plasma processing may require high processing accuracy. For example, in the field of image sensors, high microfabrication accuracy is required as the number of pixels increases. For example, etching, film deposition, impurity injection, and the like are required to form a high-aspect inter-pixel isolation layer.

[0003] For example, one method for improving processing accuracy is to fine-tune a typical processing recipe through batch processing based on information from various sensors attached to the plasma processing equipment. The various sensors control plasma processing conditions, such as pressure, flow rate, and atomic emission intensity. Fine-tuning of the processing recipe is performed on, for example, temperature, voltage, and frequency. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2019-201168 Summary of the Invention [Problem to be solved by the invention]

[0005] However, this method cannot detect information about the active species themselves near the processing stage, making it difficult to improve processing accuracy. Active species are the smallest unit of plasma processing. Thus, improving processing accuracy in plasma processing is desirable.

[0006] The present invention has been made in consideration of the above circumstances, and has an object to provide a plasma processing apparatus and a plasma processing method that are capable of improving processing accuracy. That is, an object of the present invention is to provide a plasma processing apparatus and a plasma processing method that are capable of improving processing accuracy. [Means for solving the problem]

[0007] The above object can be achieved by the following means.

[0008] (1) A stage having a mounting surface on which a substrate can be mounted, an active species emitting unit that emits active species or active species raw materials for performing plasma processing on the substrate toward the stage, a laser light generating unit that forms a laser sheet in an observation area including at least a portion of the area between the mounting surface and the active species emitting unit, and a detection unit that detects excited luminescence generated in the observation area, A plasma processing device, wherein the quenching length of the excited emission is 20 nanoseconds or less.

[0009] (2) A plasma processing apparatus as described in (1) above, in which the excited emission is generated by the activated species excited by the laser sheet.

[0010] (3) The plasma processing apparatus according to (1) or (2) above, further comprising a chamber in which the stage and the activated species emitter are housed.

[0011] (4) A plasma processing apparatus as described in (3) above, in which by-products generated by the plasma processing are present in the chamber, and the excited light emission is caused by the by-products excited by the laser sheet.

[0012] (5) The plasma processing apparatus according to any one of (1) to (4) above, wherein the laser light generating unit forms a main surface of the laser sheet in a direction intersecting the placement surface.

[0013] (6) The plasma processing apparatus according to any one of (1) to (4) above, wherein the laser light generating unit forms a main surface of the laser sheet in a direction parallel to the placement surface.

[0014] (7) The plasma processing apparatus according to any one of (1) to (6) above, wherein the laser light generating unit is configured to be able to change the wavelength of the light that constitutes the laser sheet.

[0015] (8) A plasma processing apparatus according to any one of (1) to (7) above, wherein the laser light generating unit includes a light source that emits a beam of light and a lens unit that forms the laser sheet from the beam of light.

[0016] (9) A plasma processing apparatus according to any one of (1) to (8) above, further comprising a reflector, wherein the laser sheet includes a first portion and a second portion adjacent to each other with the reflector in between, and the main surface of the second portion is formed in a direction intersecting the main surface of the first portion.

[0017] (10) The plasma processing device according to any one of (1) to (9) above, wherein the width of the laser sheet is 50 mm or less.

[0018] (11) The plasma processing apparatus according to any one of (1) to (10) above, further comprising a damper provided at a position corresponding to an end of the laser sheet.

[0019] (12) The plasma processing apparatus according to any one of (1) to (11) above, wherein the detection unit is provided at a position facing the main surface of the laser sheet.

[0020] (13) The plasma processing apparatus according to any one of (1) to (12) above, wherein the detection unit includes a SPAD.

[0021] (14) The plasma processing apparatus according to any one of (1) to (13) above, including a plurality of the stages.

[0022] (15) The plasma processing apparatus according to any one of (1) to (14) above, further comprising a shutter configured to be switchable between a closed state that covers the placement surface and an open state that exposes the placement surface.

[0023] (16) The plasma processing apparatus according to (2) above, further comprising an information processing unit that generates first activated species information regarding the state of the activated species based on first light emission information regarding the excited light emission imaged at a first time.

[0024] (17) The plasma processing apparatus according to (16) above, wherein the information processing unit determines first conditions for the plasma processing based on the generated first activated species information, the information processing unit generates second activated species information on the state of the activated species based on second light emission information on the excited light emission imaged at a second time later than the first time, and the information processing unit determines whether to change the first conditions based on the generated second activated species information.

[0025] (18) The plasma processing apparatus according to (17) above, wherein the information processing unit, when determining to change the first condition, determines a second condition for the plasma processing that is different from the first condition.

[0026] (19) The plasma processing apparatus according to any one of (1) to (18) above, wherein the plasma processing is etching processing.

[0027] (20) A plasma processing method comprising: emitting active species or active species raw materials from an active species emitter toward a stage on which a substrate can be placed; forming a laser sheet in an observation area including at least a portion of the area between the stage placement surface and the active species emitter; and detecting excited emission generated in the observation area, wherein the quenching length of the excited emission is 20 nanoseconds or less. [Effects of the Invention]

[0028] In the plasma processing apparatus and plasma processing method according to the present invention, the planar excitation light emission in the observation area is detected by the detector, which allows the state of the activated species near the stage to be grasped, making it possible to immediately adjust the plasma processing conditions in accordance with the state of the activated species, thereby improving processing accuracy. [Brief explanation of the drawings]

[0029] [Figure 1] 1 is a block diagram illustrating an example of a configuration of a plasma processing apparatus according to an embodiment of the present invention. [Figure 2A] 2 is a plan view showing an example of the front configuration in the vicinity of a chamber in which the stage system and the like shown in FIG. 1 are housed. FIG. [Figure 2B] 2B is a diagram illustrating a cross-sectional configuration taken along line BB shown in FIG. 2A. [Figure 3A] 2 is a plan view illustrating an example of a configuration of a side surface of a shutter provided in the plasma processing apparatus shown in FIG. 1. FIG. [Figure 3B] 3B is a plan view illustrating an example of the configuration of the upper surface of the shutter illustrated in FIG. 3A. FIG. [Figure 4A] 1. FIG. 3 is a plan view illustrating an example of the configuration of a side surface of the laser light generating unit 40 shown in FIG. [Figure 4B] 4B is a plan view illustrating an example of the configuration of the upper surface of the laser light generating unit 40 illustrated in FIG. 4A. [Figure 5] 2 is a block diagram illustrating an example of the configuration of a detection unit shown in FIG. 1 and the like. [Figure 6] 2 is a block diagram illustrating an example of the configuration of an information processing unit illustrated in FIG. 1. [Figure 7] 2 is a block diagram illustrating an example of a functional configuration of an information processing unit illustrated in FIG. 1. [Figure 8] 2 is a flowchart illustrating an example of processing executed by an information processing unit illustrated in FIG. 1. [Figure 9A] 10 is a plan view illustrating an example of a front configuration of a main part of a plasma processing apparatus according to a first modification. FIG. [Figure 9B] 9B is a diagram illustrating a cross-sectional configuration taken along line BB shown in FIG. 9A. [Figure 10]10 is a cross-sectional view showing an example of the configuration of a main part of a plasma processing apparatus according to Modification 2. FIG. [Figure 11] 11 is a cross-sectional view showing an example of the configuration of a main part of a plasma processing apparatus according to a third modification. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0030] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following drawings, the same reference numerals refer to the same components, and the dimensions of each component in the drawings are not drawn to scale for clarity and convenience of explanation. Meanwhile, the embodiments described below are merely examples, and various modifications are possible from such embodiments.

[0031] In the following, the terms "upper" and "above" may include not only something that is directly above in contact with something, but also something that is above without contacting something.

[0032] An element expressed in the singular includes a plurality of elements unless the context clearly dictates otherwise. Furthermore, when a part "includes" or "has" a certain element, it does not mean excluding other elements, but means that other elements may also be included, unless specifically stated to the contrary.

[0033] Also, use of the term "said" and similar referents applies to both the singular and the plural.

[0034] Unless explicitly stated or stated to the contrary, steps constituting a method may be performed in any suitable order, and are not necessarily limited to the order of steps described. Any use of examples or exemplary terms (such as, for example, etc.) is intended merely to illustrate the technical idea, and the scope of the invention is not limited by said examples or exemplary terms, except as limited by the scope of the claims.

[0035] <Embodiment> (Configuration of plasma processing device 1) 1 shows an example of the configuration of a plasma processing apparatus 1 according to one embodiment of the present invention. The plasma processing apparatus 1 includes, for example, a stage system 10, a plasma generation system 20, an exhaust system 30, a laser light generation unit 40, a detection unit 50, and an information processing unit 60. The stage system 10, the plasma generation system 20, the exhaust system 30, the laser light generation unit 40, and the detection unit 50 are each connected to the information processing unit 60 via, for example, a network.

[0036] 2A and 2B show an example of the configuration in the vicinity of chamber 100 where plasma processing is performed. Fig. 2A shows an example of the configuration of the front of chamber 100, and Fig. 2B shows an example of the cross-sectional configuration along line BB shown in Fig. 2A.

[0037] The chamber 100 is a work area for performing plasma processing on the substrate 70. The chamber 100 is evacuated by an exhaust system 30, creating a reduced pressure state. The substrate 70 is, for example, a silicon (Si) substrate. The size of the substrate 70 is, for example, 12 inches. Within the chamber 100, the substrate 70 is subjected to local etching processing using, for example, activated species 80. The chamber 100 is provided with, for example, a viewport 110 for observing the interior of the chamber 100 from outside the chamber 100. Various sensors, such as a pressure sensor, may be provided within the chamber 100. In the following description, of the movement directions of the substrate 70 within the chamber 100, the movement directions parallel to the main surface of the substrate 70 may be referred to as the X direction and Y direction, and the movement direction perpendicular to the main surface of the substrate 70 may be referred to as the Z direction.

[0038] In addition to the function of fixing the substrate 70, the stage system 10 has functions of heating and cooling the substrate 70, applying a bias voltage, rotating, elevating, and interrupting a discharge. The stage system 10 includes, for example, a stage 11, lift pins 12, an X-direction drive unit 13, a Y-direction drive unit 14, a rotation drive unit 15, and a Z-direction drive unit 16. The stage 11, which is provided in the chamber 100, has a mounting surface 11S. The substrate 70 is placed on this mounting surface 11S and is subjected to plasma processing. The mounting surface 11S is configured as an XY plane.

[0039] The stage 11 is provided with, for example, an electrostatic chuck circuit, a heating circuit, and a cooling circuit. The electrostatic chuck circuit serves to attach the substrate 70 to the stage 11. The heating circuit and the cooling circuit serve to heat and cool the substrate 70. The stage 11 may be provided with a mechanism for injecting a rare gas, such as argon or helium, into the backside of the substrate 70 and for exhausting the rare gas. The rare gas promotes temperature transfer between the mounting surface 11S and the substrate 70. The stage 11 may also be provided with a temperature sensor or the like for detecting the temperature of the substrate 70. The stage 11 also has a function for controlling the activated species 80 directed toward the substrate 70; for example, the stage 11 is provided with a lower electrode. The stage 11 is also provided with an edge ring 17. The edge ring 17 controls the processed shape of the outer periphery of the substrate 70. The stage 11 may also have functions such as temperature adjustment, position elevation, and bias application for the edge ring 17.

[0040] A plurality of lift pins 12 are provided, for example, at equal intervals inside the stage 11. Each of the plurality of lift pins 12 is configured to be movable in the Z direction. The substrate 70 is supported by the tips of the lift pins 12 protruding from the mounting surface 11S. The tips of the lift pins 12 move to the same plane as the mounting surface 11S or inside the stage 11, thereby placing the substrate 70 on the mounting surface 11S. The lift pins 12 protrude from the mounting surface 11S by at least the thickness of a transport unit (robot hand end effector) for the substrate 70. This allows the substrate 70 to be transferred between the transport unit and the stage 11.

[0041] The X-direction driver 13, the Y-direction driver 14, and the Z-direction driver 16 drive the mounting surface 11S of the stage 11 in the X, Y, and Z directions, respectively. The Z-direction driver 16 includes a bellows structure 161 and is configured to be able to elevate and contract under reduced pressure. The rotation driver 15 rotates the mounting surface 11S of the stage 11 clockwise or counterclockwise within the XY plane. The rotation driver 15 may also include a heating circuit, a cooling circuit, a power supply function for fixing the substrate 70, a bias application circuit, a sensor function, or the like. For example, the rotation driver 15 may include a slip ring, and a magnetic fluid seal or a magnetic coupling may be used for sealing under atmospheric pressure to reduced pressure. The rotation driver 15 preferably includes an encoder for controlling the amount of rotation of the stage 11.

[0042] Plasma processing apparatus 1 may have a configuration for protecting substrate 70 placed on stage 11 from activated species 80. Plasma processing apparatus 1 may have, for example, a shutter (shutter 131 in FIGS. 3A and 3B described below).

[0043] 3A and 3B show an example of the configuration of shutter 131. Shutter 131 is configured to be switchable between a closed state and an open state. Solid lines in FIGS. 3A and 3B represent shutter 131 in a closed state, and dashed lines in FIGS. 3A and 3B represent shutter 131 in an open state. The surface of shutter 131 has a coating function that takes into account etching resistance by plasma etching, for example. When plasma processing apparatus 1 performs film formation processing on substrate 70, shutter 131 may have a surface that takes into account surface roughness in addition to the coating function. Furthermore, shutter 131 may have built-in heating circuits, cooling circuits, bias control circuits, etc., and these circuits may be configured to change the duty ratio using multi-pulses.

[0044] The shutter 131 in the closed state is disposed opposite to and spaced apart from the mounting surface 11S of the stage 11 in the Z direction, and covers the mounting surface 11S. The area of ​​the shutter 131 in the XY plane is, for example, larger than the area of ​​the mounting surface 11S. The shutter 131 in the closed state functions to protect the mounting surface 11S or the substrate 70 placed on the mounting surface 11S from the active species 80.

[0045] The open shutter 131 is disposed at a position not facing the mounting surface 11S of the stage 11, exposing the mounting surface 11S or the substrate 70. The open shutter 131 is housed in, for example, a shutter chamber 130. The shutter chamber 130 is provided at a position adjacent to the chamber 100 in the Y direction, for example.

[0046] The closed and open states of the shutter 131 are switched by, for example, a shutter driver 132. The shutter driver 132 pivots, for example, one end of the shutter 131 in the Y direction, and rotates the shutter 131. This switches the closed and open states of the shutter 131. The shutter driver 132 is disposed, for example, outside the chamber 100. The inside and outside of the chamber 100 are isolated, for example, via a magnetic fluid seal or a magnetic coupling. The shutter driver 132 has an encoder function that detects the amount of rotation of a predetermined angle.

[0047] The plasma generation system 20 has functions such as supplying gas to the chamber 100, mixing the gas, heating and cooling the gas, and applying a voltage to the gas. As shown in FIG. 2A , the plasma generation system 20 includes a nozzle 23 and a gas supply unit 24. For example, the nozzle 23 functions as an upper electrode. The upper electrode has, for example, a surface discharge structure integrated with the nozzle 23. A lower electrode provided on the stage 11 and an upper electrode integrated with the nozzle 23 face each other, for example, in the Z direction. The upper electrode may be disposed on the gas supply line at a distance from the nozzle 23. In this case, the upper electrode has, for example, an external induction coil-like electrode structure. The plasma generation system 20 may generate plasma, for example, using a remote plasma method. In the remote plasma method, plasma is generated at a position sufficiently separated from the substrate 70, for example, between the nozzle 23 and the gas supply unit 24.

[0048] The nozzle 23 provided in the chamber 100 emits gas supplied from the gas supply unit 24 toward the substrate 70. When the gas is emitted from the nozzle 23 while a predetermined voltage is applied between the lower electrode and the upper electrode, the gas is converted into plasma and activated species 80 are generated. The activated species 80 perform plasma processing on the substrate 70 placed on the stage 11. That is, the gas emitted from the nozzle 23 contains activated species raw material. The nozzle 23 is disposed, for example, opposite the stage 11 in the Z direction. Here, the nozzle 23 corresponds to a specific example of an activated species emission unit of the present invention.

[0049] The gas supplied from the gas supply unit 24 to the nozzle 23 is, for example, a perfluorocarbon (PFC) gas. x F y Refers to the system, C x F y Examples of the gases supplied from the gas supply unit 24 to the nozzle 23 include carbon tetrafluoride (CF4). The gas supplied from the gas supply unit 24 to the nozzle 23 may be a hydrofluorocarbon (HFC) gas such as trifluoromethane (CHF3), or a chlorofluorocarbon (CFC) gas such as trichlorofluoromethane (CCl3F). The gas supplied from the gas supply unit 24 to the nozzle 23 may be a gas other than those mentioned above, such as a fluorocarbon gas, a hydrocarbon gas, an F-free organic halogen gas, or an inorganic halogen gas. Examples of the inorganic halogen gas include sulfur hexafluoride (SF6). The gas supplied from the gas supply unit 24 to the nozzle 23 may be nitrogen trifluoride (NF3), hydrogen (H), xenon (Xe), argon (Ar), helium (He), or the like, and may be a precursor gas alone or in the form of a mixed gas.

[0050] The exhaust system 30 has functions such as exhausting gases from the chamber 100, exhausting cleaning gases from the chamber 100, and controlling the pressure inside the chamber 100. The exhaust system 30 includes, for example, a pump. The inside of the chamber 100 is evacuated by the exhaust system 30. The exhaust system 30 may further include a corrosion-resistant coating, a heating and cooling system, or the like. The position where the exhaust system 30 exhausts the inside of the chamber 100 may be below the viewport 110 or the stage 11.

[0051] The laser light generation unit 40 generates a sheet-like laser beam, i.e., a laser sheet 90, in the observation region 50A. The observation region 50A includes at least a portion of the area between the mounting surface 11S and the nozzle 23. Activated species 80 exist in the observation region 50A. When the laser light generation unit 40 forms the laser sheet 90 in the observation region 50A, planar excitation and emission of atoms occurs, for example, in the bulk plasma region or the sheath plasma region. In this way, the plasma processing apparatus 1 uses laser-induced fluorescence to quantify the state of the activated species 80, such as the absolute ion density or electron temperature. The laser light generation unit 40 is disposed, for example, adjacent to the chamber 100 in the X direction.

[0052] The main surface of the laser sheet 90 is formed, for example, in a direction intersecting the placement surface 11S or the substrate 70. In order to suppress scattered light and laser damage caused by the laser sheet 90, the end (end in the Z direction) of the laser sheet 90 is formed to be spaced apart from the surface of the placement surface 11S or the substrate 70. The main surface of the laser sheet 90 is, for example, a plane perpendicular to the placement surface 11S, which is the XZ plane. The width (size in the Z direction) of the laser sheet 90 is 50 mm or less, for example, 1 mm or less. The laser sheet 90 may be split into light beams, and a portion of the beams may be used for trimming the edge region of the substrate 70. At this time, excited light emission occurs due to the generated by-products and the laser sheet 90. The plasma processing apparatus 1 may detect this excited light emission and add feedback to the processing information. In this case, it is preferable that the plasma processing apparatus 1 trims the substrate 70 while rotating the stage 11.

[0053] 4A and 4B show an example of the configuration of laser light generation unit 40. Laser light generation unit 40 includes, for example, a light source 41, a diverging lens 42, a Z-axis direction converging lens 43, an X-axis direction converging lens 44, and a focusing lens 45. Here, diverging lens 42, Z-axis direction converging lens 43, X-axis direction converging lens 44, and focusing lens 45 correspond to a specific example of a lens unit of the present invention. An anti-reflection film may be formed on the lens surfaces of diverging lens 42, Z-axis direction converging lens 43, X-axis direction converging lens 44, and focusing lens 45.

[0054] The light source 41 emits a pulsed laser beam. The wavelength of the laser beam emitted by the light source 41 is, for example, in the vacuum ultraviolet region (10 nm) to infrared region (2500 nm). For example, the wavelength of the laser beam emitted by the light source 41 is configured to be changeable within this wavelength range. This makes it possible to measure the emission spectrum in the observation region 50A. The light source 41 is preferably configured to be a dye laser whose wavelength can be tuned in units of 0.001 nm or less.

[0055] The diffusing lens 42 and the Z-axis convergent lens 43 are configured, for example, by cylindrical lenses. A laser sheet 90 is formed by a laser beam emitted from the light source 41 passing through the diffusing lens 42, the Z-axis convergent lens 43, the X-axis convergent lens 44, and the focusing lens 45. The laser sheet 90 formed by the laser light generating unit 40 enters the chamber 100, for example, via a viewport 110. An anti-reflection film or an etching-resistant film may be formed on the surface of the viewport 110. The chamber 100 may be provided with an exit-side viewport (not shown) from which the laser light is emitted. This exit-side viewport may be positioned, for example, opposite the viewport 110. The line connecting these two viewports may be positioned at an angle with the mounting surface 11S. This reduces light diffusion. The laser light generating unit 40 may include an oscillator or the like.

[0056] A damper 120, for example, is disposed on the inner wall of the chamber 100. This damper 120 serves to protect the chamber 100 from the laser sheet 90. Specifically, the damper 120 suppresses damage to internal components within the chamber 100 and light scattering. The damper 120 is disposed within the chamber 100 at a position corresponding to the end of the laser sheet 90. The damper 120 is disposed, for example, at a position facing the viewport 110 in the X direction. The damper 120 may also be disposed outside the chamber 100. The damper 120 may have a cooling function to accommodate high joule laser energy. It is desirable that the surface of the damper 120 has an uneven surface. It is also desirable that the damper 120 have a blackbody structure, which makes it possible to suppress light scattering.

[0057] The detection unit 50 detects excited luminescence generated in the observation region 50A. In this embodiment, the detection unit 50 is configured to detect, for example, the quenching length of excited luminescence of light metal atoms, between 1 nanosecond and 20 nanoseconds. The detection unit 50 is, in principle, capable of detecting excited luminescence with a quenching length of less than 1 nanosecond by selecting, for example, a gating configuration (shutter time). The quenching length is the time from when the target is excited to when it is quenched. This excited luminescence is generated, for example, by activated species 80 excited by the laser sheet 90. As will be described in detail later, the plasma processing apparatus 1 of this embodiment includes this detection unit 50, which allows the state of the activated species 80 near the stage 11 to be monitored and the plasma processing conditions to be adjusted. The detection unit 50 detects excited luminescence over time, for example. The detection unit 50 is positioned, for example, opposite the main surface of the laser sheet 90. The detection unit 50 is positioned, for example, outside the chamber 100. Furthermore, by using the detection unit 50, by-products with short quenching lengths (e.g., silicon (Si), oxygen, and nitrogen) from the substrate 70 can be detected, and a configuration can be realized that can reflect any changes to the processing recipe.

[0058] 5 shows an example of the configuration of the detection unit 50. The detection unit 50 includes, for example, an imaging device capable of capturing light with wavelengths from the extreme ultraviolet region (1 nm to 10 nm) to the infrared region (2500 nm), and includes an ICCD (Intensified Charge Coupled Device). The detection unit 50 includes, for example, a condenser lens 51, a bandpass filter 52, a photoelectric conversion element 53, and a pixel circuit 54.

[0059] The condenser lens 51 condenses light from the observation region 50A onto the bandpass filter 52. The bandpass filter 52 selectively transmits light in a predetermined wavelength range. The light that passes through the bandpass filter 52 enters the photoelectric conversion element 53. The photoelectric conversion element 53 converts the incident light into an electrical signal. The photoelectric conversion element 53 includes, for example, a SPAD (Single Photon Avalanche Diode). The inclusion of a SPAD in the photoelectric conversion element 53 provides the detection unit 50 with a light multiplication function. This enables highly accurate detection of weak excitation luminescence over a short period of time. The pixel circuit 54 detects the electrical signal generated by the photoelectric conversion element 53 for each pixel and generates luminescence information. The luminescence information is information related to excitation luminescence occurring at a predetermined time, and includes, for example, information related to the wavelength and intensity of the excitation luminescence. The luminescence information generated by the pixel circuit 54 is transmitted to the information processing unit 60.

[0060] The detection unit 50 may have a band-stop configuration. This band-stop configuration selectively passes the emission wavelength at which atoms return to the ground state and filters out the laser light wavelength. The band-stop configuration is realized, for example, by a notch filter, a dichroic mirror, or the like. The detection unit 50 may have, for example, a delay correction function. This delay correction function corrects the delay between laser oscillation and light emission. Specifically, the detection unit 50 preferably has the function of a delay pulse generator (delay generator). The shutter of the detection unit 50 opens and closes, for example, as follows: When the voltage between the photocathode of the photoelectric conversion element 53 and the multichannel plate is negative, photoelectrons are accelerated toward the multichannel surface, and the shutter opens. On the other hand, when photoelectrons are accumulated on the photocathode, the shutter closes. The shutter time (gating width) is preferably 2 ns or less.

[0061] The information processing unit 60 has a function for interpolating the previous measurement data as a processing recipe. The information processing unit 60 is, for example, a computer such as a PC (Personal Computer). The information processing unit 60 first quantifies the state of the activated species 80 based on the light emission information generated by the detection unit 50. The state of the activated species 80 is, for example, the state of ion density and the state of electron temperature. The information processing unit 60 then converts this quantified state of the activated species 80 into a physical quantity and provides a variable processing amount as needed to the stage system 10, the plasma generation system 20, the exhaust system 30, etc. It is desirable that the information processing unit 60 be configured to receive or provide measurement values ​​of the substrate 70, processing amounts of the substrate 70, or calculated values ​​from other devices.

[0062] FIG. 6 is a block diagram illustrating an example of the schematic configuration of the information processing unit 60. The information processing unit 60 includes, for example, a central processing unit (CPU) 61, a read-only memory (ROM) 62, a random access memory (RAM) 63, a storage device 64, a communication interface 65, and an operation display unit 66. Each component is communicatively connected to one another via a bus 67. A graphics processing unit (GPU) is preferably used for the information processing unit 60. Using a GPU for the information processing unit 60 enables high-speed computation of training data and image data for machine learning, as well as the large-scale data processing layer for decision-making. The information processing unit 60 may estimate the state of the activated species 80 using a machine learning model. The machine learning model is stored in a manufacturing execution system (MES) installed in a host computer above the equipment. Decision-making information is provided to the equipment group as needed from the data layer from each equipment group and the analysis layer based on the machine learning model via a communication protocol or the like. Alternatively, it is preferable to have an edge computing layer (data layer / analysis layer) attached to the information processing unit 60 that makes decisions at high speed without going through a higher-level host computer, and to have a configuration in which manufacturing is executed in real time via a bus 67.

[0063] The CPU 61 controls the above components and performs various arithmetic processing in accordance with programs stored in the ROM 62 and storage 64. The specific functions of the CPU 61 will be described later.

[0064] The ROM 62 stores various programs and data.

[0065] The RAM 63 serves as a working area for temporarily storing programs and data.

[0066] The storage 64 stores various programs including the operating system and various data.

[0067] The communication interface 65 is an interface for communicating with other devices. A wired or wireless communication interface conforming to various standards is used as the communication interface 65. The communication interface 65 is used, for example, to receive light emission information from the detection unit 50 and to transmit processing conditions to the plasma generation system 20, etc.

[0068] The operation display unit 66 is configured, for example, by a touch panel including a display unit such as an LCD (liquid crystal display) or an organic EL display, and a touch sensor. The display unit that displays various information and the operation unit that accepts various user operations may be provided separately. In this case, the display unit may be configured by the above-mentioned display, viewer software, a printer, etc., and the operation unit may be configured by a touch sensor and a pointing device such as a mouse, a keyboard, etc.

[0069] (Functions of the information processing unit 60) 7 is a block diagram showing the functional configuration of the information processing unit 60. The information processing unit 60 functions as an acquisition unit 611, a generation unit 612, a determination unit 613, a judgment unit 614, and an output unit 615 by the CPU 61 reading a program stored in the storage 64 and executing the process.

[0070] The acquiring unit 611 acquires luminescence information related to the excited luminescence detected by the detecting unit 50. The luminescence information may be subjected to binarization or quaternary processing by image processing. The acquiring unit 611 acquires, for example, luminescence information related to the excited luminescence detected by the detecting unit 50 at each of a plurality of times. The acquiring unit 611 acquires, for example, first luminescence information and second luminescence information. The first luminescence information is information related to the excited luminescence detected by the detecting unit 50 at a first time. The second luminescence information is information related to the excited luminescence detected by the detecting unit 50 at a second time that is later than the first time. The first time is, for example, a time before the start of plasma processing on the substrate 70, and the second time is, for example, a time after the start of plasma processing on the substrate 70.

[0071] The generating unit 612 generates activated species information regarding the state of the activated species 80 near the stage 11 based on the light emission information acquired by the acquiring unit 611. The activated species information includes, for example, information regarding the emission spectra of gas molecules, atoms, radicals, etc. contained in the activated species 80. The activated species information may include information regarding at least one of the density distribution and momentum of the gas molecules, atoms, radicals, etc. contained in the activated species 80. The activated species information may include information regarding at least one of the temperature, density, and velocity components of electrons contained in the activated species 80. For example, the generating unit 612 generates first activated species information regarding the state of the activated species 80 at a first time based on the first light emission information, and generates second activated species information regarding the state of the activated species 80 at a second time based on the second light emission information. The activated species information may include information regarding the spatiotemporal distribution of the state of the activated species 80.

[0072] The determination unit 613 determines the conditions for plasma processing based on the activated species information generated by the generation unit 612. The conditions for plasma processing are what is called a plasma processing recipe. The conditions for plasma processing include, for example, the flow rate of the gas supplied from the nozzle 23, the gas ratio, the modulation pulses of the lower electrode and the upper electrode, the height of the nozzle 23, the exhaust volume of the exhaust system 30, and the feed speed of the stage 11. The determination unit 613 determines the first conditions for plasma processing at the start of processing based on, for example, the first activated species information.

[0073] The determination unit 614 determines whether to change the plasma processing conditions based on the activated species information generated by the generation unit 612. The determination unit 614 determines whether to change the first plasma processing conditions based on, for example, the second activated species information. The determination unit 614 determines whether to change the first conditions by, for example, comparing the second activated species information with reference information. The determination unit 614 determines to change the first conditions when, for example, the density distribution of gas molecules and the like contained in the activated species 80 is outside the range of the reference density distribution. The determination unit 614 may also determine to change the first conditions when the absolute amount of gas molecules and the like contained in the activated species 80 is outside the range of the reference amount. The determination unit 614 may also determine whether to change the first conditions by comparing the second activated species information with the first activated species information.

[0074] When the judgment unit 614 determines that the first conditions should be changed, the determination unit 613 determines second conditions for the plasma processing that are different from the first conditions. The second conditions include, for example, the flow rate of the gas supplied from the nozzle 23, the gas ratio, the modulation pulses of the lower electrode and the upper electrode, the height of the nozzle 23, the exhaust amount by the exhaust system 30, and the feed speed of the stage 11. The determination unit 613 determines the second conditions based on, for example, third activated species information related to the state of the activated species 80 at a third time that is later than the second time. The determination unit 613 may determine the second conditions for the plasma processing based on the second activated species information.

[0075] The output unit 615 outputs information about the plasma processing conditions determined by the determination unit 613. The output unit 615 outputs information about the plasma processing conditions to, for example, the operation display unit 66. As a result, the operation display unit 66 displays the plasma processing conditions. The output unit 615 may output information about the plasma processing conditions to the stage system 10, the plasma generation system 20, the exhaust system 30, etc. As a result, for example, each part of the plasma processing apparatus 1 is adjusted to conform to the first condition or the second condition. The output unit 615 may output information about the result of the determination by the determination unit 614.

[0076] (Processing Overview of Information Processing Unit 60) The processing executed in the information processing unit 60, that is, the processing method performed by the plasma processing apparatus 1, will be described in detail below.

[0077] Fig. 8 is a flowchart showing an example of the procedure of processing executed by the information processing unit 60. The processing of the information processing unit 60 shown in the flowchart of Fig. 8 is stored as a program in the storage 64 of the information processing unit 60, and is executed by the CPU 61 controlling each unit. It is also possible to use execution command values ​​or data from a higher-level host computer or other device via the communication interface 65 for this calculation.

[0078] First, the information processing unit 60 acquires first light emission information (step S111). At a first time, for example, the substrate 70 is placed on the mounting surface 11S of the stage 11, and the substrate 70 is adsorbed to the stage 11. After the substrate 70 is adsorbed to the stage 11, a heat transfer gas (e.g., He or Ar) is supplied between the rear surface of the substrate 70 and the mounting surface 11S, and heating or cooling of the substrate 70 begins. At this time, the shutter 131 is in a closed state (a state in which the shutter 131 moves from the shutter chamber 130 to the mounting surface 11S and above). In this state, the plasma generation system 20 releases gas (or activated species 80 converted into plasma) from the nozzle 23, and the laser light generation unit 40 generates a laser sheet 90. The detection unit 50 detects excited light emission generated in the observation region 50A at this first time, thereby generating first light emission information.

[0079] Next, the information processing unit 60 generates first activated species information based on the first emission information acquired in step S111 (step S112). Here, the information processing unit 60 performs binarization or quaternization on the emission information related to the excited emission of various activated species 80 to generate information related to the emission density distribution per unit cross-sectional area, unit volume, or unit time. Next, the information processing unit 60 determines first conditions for plasma processing based on each count (gas flow rate, pulse duty ratio, chamber pressure, etc.) calculated from physical quantities based on the first activated species information generated in step S112 (step S113). Thereafter, the information processing unit 60 outputs the first conditions determined in step S113 (step S114).

[0080] After the plasma processing apparatus 1 starts plasma processing under the first condition, the information processing unit 60 acquires second light emission information (step S115). In other words, at the second time, the plasma processing apparatus 1 is performing plasma equivalent processing on the shutter 131 under the first condition.

[0081] Next, the information processing unit 60 generates second active species information based on the second light emission information acquired in step S115 (step S116). Subsequently, the information processing unit 60 determines whether or not to change the first condition of the plasma processing based on the second active species information generated in step S116 (step S117).

[0082] Here, in step S117, the information processing unit 60 determines whether or not the threshold value of the desired amount of target processing is satisfied. When it is determined that the threshold value is satisfied and the first condition is not changed (passed) (step S117: NO), the information processing unit 60 proceeds to the processing of step S122. When the determination result is passed, the shutter 131 is switched from the closed state to the open state (the shutter 131 moves into the shutter chamber 130). Then, the mounting surface 11S of the stage 11 moves in the Z direction (process position) and approaches the nozzle 23.

[0083] When the information processor 60 determines that the first condition is to be changed (mismatch) because the threshold value is not satisfied (step S117: YES), the information processor 60 acquires third light emission information and generates third activated species information (steps S118 and S119). The third light emission information is information related to excited light emission detected at a third time point after the second time point. Thereafter, the information processor 60 determines and outputs second conditions for the plasma processing based on the third activated species information generated in step S119 (steps S120 and S121). Specifically, when step S117 is YES, the information processor 60 regenerates the light emission information and activated species information in steps S118 and S119 and changes each coefficient (gas flow rate, pulse duty ratio, chamber pressure, etc.) in step S120. As a result, the stage system 10, the plasma generation system 20, and the exhaust system 30 are adjusted to the second conditions. That is, plasma processing apparatus 1 changes from the first condition to the second condition and performs plasma processing on substrate 70.

[0084] Based on the second condition output in step S121, the plasma processing apparatus 1 drives the stage 11 along the X direction, Y direction, Z direction, or R axis. At this time, the plasma processing apparatus 1 adjusts the relative speed and distance of the stage 11 with respect to the nozzle 23, taking into consideration the path and height of the stage 11, which are calculated and predicted in advance based on desired values ​​(preliminary measurement values) such as the thickness of the substrate 70 and the opening size. After outputting the second condition, the information processing unit 60 determines whether to end the process (step S122). If it determines not to end the process (step S122: NO), the information processing unit 60 returns to the process of step S115. If it determines to end the process (step S122: YES), the information processing unit 60 ends the process.

[0085] Plasma processing apparatus 1 is configured to be able to constantly detect light emission information during the plasma processing process. For example, when changing processing conditions (when moving from step S117 to step S118), plasma processing apparatus 1 may keep shutter 131 closed. Alternatively, if the threshold change is within the allowable range, shutter 131 may be opened. Multiple thresholds for stopping processing may be provided.

[0086] (Actions and effects of plasma processing device 1) The plasma processing apparatus 1 of this embodiment has a detection unit 50, which detects excited luminescence generated in an observation region 50A. This makes it possible to grasp the state of activated species 80 near the stage 11 and immediately adjust the plasma processing conditions. The effects of this will be described below.

[0087] In plasma processing such as etching, even if processing of a substrate is started under appropriate conditions, sufficient processing accuracy may not be maintained. This is because the conditions inside the chamber 100 change over time due to nozzle wear, deposition of by-products inside the nozzle, air leaks, etc. Furthermore, appropriate processing conditions may differ for each device due to component tolerances and installation variations, etc.

[0088] In contrast, in the plasma processing apparatus 1, the state of the activated species 80 (for example, the local absolute density number) can be monitored in real time by the detection unit 50. Therefore, even if the state of the activated species 80 changes from the start of processing due to wear of the nozzle 23 or the like, the conditions of the plasma processing can be adjusted in response to this change in the state of the activated species 80. This makes it possible to improve the processing accuracy of the substrate 70.

[0089] As described above, in the plasma processing apparatus 1 of this embodiment, excited luminescence is detected by the detection unit 50. This makes it possible to grasp the state of the activated species 80 near the stage 11 and adjust the plasma processing conditions. This makes it possible to improve the processing accuracy.

[0090] In particular, in CIS (CMOS Image Sensor) for mobile devices, high in-plane uniformity is required on the substrate due to miniaturization of pixel size and lamination processes, etc. Therefore, the plasma processing apparatus 1 of the present embodiment can be suitably used for manufacturing such CIS for mobile devices.

[0091] The following describes a modified example of the plasma processing apparatus 1 according to the above embodiment. In order to avoid duplication of explanation, detailed explanation of the same configuration as that of the plasma processing apparatus 1 according to the above embodiment will be omitted.

[0092] <Variation 1> 9A and 9B show an example of the configuration of plasma processing apparatus 1 according to Modification 1. FIG. 9A shows an example of the configuration of the front of chamber 100 in plasma processing apparatus 1, and FIG. 9B shows an example of the cross-sectional configuration along line BB shown in FIG. 9A. FIG. 9A corresponds to FIG. 2A described in the above embodiment, and FIG. 9B corresponds to FIG. 2B described in the above embodiment. In this plasma processing apparatus 1, laser light generation unit 40 forms laser sheet 90 having a main surface parallel to mounting surface 11S. Except for this point, plasma processing apparatus 1 according to Modification 1 has the same configuration as plasma processing apparatus 1 described in the above embodiment.

[0093] The main surface of the laser sheet 90 is, for example, the XY plane. The detection unit 50 is disposed, for example, at a position facing the main surface of the laser sheet 90. The detection unit 50 is disposed, for example, between the mounting surface 11S of the stage 11 and the nozzle 23. The detection unit 50 may be disposed, for example, at a position facing the laser sheet 90 in the Y direction or the X direction.

[0094] <Variation 2> Fig. 10 shows an example of the configuration of plasma processing apparatus 1 according to Modification 2. Fig. 10 corresponds to Fig. 2B showing chamber 100 of the above embodiment. This plasma processing apparatus 1 further includes a reflector 46. Except for this point, plasma processing apparatus 1 according to Modification 2 has the same configuration as plasma processing apparatus 1 described in the above embodiment.

[0095] The reflector 46 is disposed, for example, within the chamber 100, with multiple rotatable axes. The reflector 46 reflects the laser light transmitted through the viewport 110. The reflector 46 forms a first portion 91 and a second portion 92 of the laser sheet 90. The first portion 91 and the second portion 92 are formed adjacent to each other with the reflector 46 in between. The first portion 91 is the portion of the laser sheet 90 from the viewport 110 to the reflector 46. The second portion 92 is the portion of the laser sheet 90 from the reflector 46 to the inner wall of the chamber 100 or the damper 120. The reflector 46 reflects the light directly from the main surface of the second portion 92, but may also polarize the light in a direction intersecting the main surface of the first portion 91. For example, the second portion 92 is formed in the observation region 50A. By including the reflector 46 in the plasma processing apparatus 1, the direction of the laser sheet 90 can be easily changed. A dielectric multilayer film according to the wavelength may be provided on the surface of the reflector 46. This makes it possible to improve the reflectance or suppress scattering loss. The reflector 46 may have a heating function or a cooling function.

[0096] The detector 50 is configured to be movable, for example, in accordance with the orientation of the reflector 46. This makes it possible to detect excited luminescence in the observation region 50A with high accuracy.

[0097] <Variation 3> Fig. 11 shows an example of the configuration of plasma processing apparatus 1 according to Modification 3. Fig. 11 corresponds to Fig. 2B showing chamber 100 of the above embodiment. This plasma processing apparatus 1 has multiple stages (stages 11A, 11B). Except for this point, plasma processing apparatus 1 according to Modification 3 has the same configuration as plasma processing apparatus 1 described in the above embodiment.

[0098] In chamber 100, for example, stages 11A and 11B are arranged side by side in the X direction. Stages 11A and 11B are each configured to be able to place a substrate 70 thereon. That is, this plasma processing apparatus 1 can perform plasma processing on each of a plurality of substrates 70. For example, plasma processing apparatus 1 has two nozzles 23. One of nozzles 23 emits gas toward stage 11A, and the other of nozzles 23 emits gas toward stage 11B.

[0099] For example, a beam splitter 47 is disposed between the stage 11A and the stage 11B. The beam splitter 47 forms a laser sheet 90A and a laser sheet 90B. The main surfaces of the laser sheets 90A and 90B are, for example, the XY plane. The laser sheet 90A is formed between the stage 11A and the nozzle 23. The laser sheet 90B is formed between the stage 11B and the nozzle 23. The wavelength of the laser light constituting the laser sheet 90A and the wavelength of the laser light constituting the laser sheet 90B may be different from each other.

[0100] The plasma processing apparatus 1 may have a flip lens instead of the beam splitter 47. The flip lens, for example, switches between forming laser sheets 90A and 90B. For example, the flip lens forms laser sheet 90A when stage 11A is used, and forms laser sheet 90B when stage 11B is used.

[0101] For example, a prism 48 is disposed between the stage 11A and the stage 11B. The excited luminescence in the observation region 50A is detected by the detection unit 50, for example, via the prism 48. For example, by rotating the prism 48, it is possible to switch between detecting the excited luminescence near the stage 11A and detecting the excited luminescence near the stage 11B.

[0102] The configuration of the plasma processing apparatus 1 described above is a main configuration for explaining the features of the above-mentioned embodiment and modified examples, but is not limited to the above configuration and can be modified in various ways within the scope of the claims. Furthermore, configurations that are included in general plasma processing apparatuses are not excluded.

[0103] For example, in the above embodiment, the plasma processing apparatus 1 is described as etching the substrate 70, but the plasma processing apparatus 1 may also perform film formation, implantation, surface modification, or the like on the substrate 70. The plasma processing apparatus 1 may also perform cleaning on the substrate 70.

[0104] Furthermore, the detection unit 50 may detect excited luminescence generated when by-products present in the chamber 100 are excited by the laser sheet 90. The by-products are, for example, generated by plasma processing of the substrate 70. For example, when the plasma processing apparatus 1 cleans the nozzle 23 or the chamber 100, the detection unit 50 detects the excited luminescence of the by-products. This makes it possible to grasp the state of impurities present in the chamber 100 and maintain the inside of the chamber 100 in a clean state.

[0105] Furthermore, the plasma processing apparatus 1 may have a plurality of laser light generating units 40 and a plurality of detecting units 50.

[0106] Furthermore, the plasma processing apparatus 1 does not necessarily have to have the shutter 131.

[0107] Furthermore, in the above embodiment, an example has been described in which a gas containing an activated species raw material is emitted from the nozzle 23 toward the stage 11, but activated species 80 may be emitted from the nozzle 23 toward the stage 11.

[0108] Furthermore, the processing units of the flowcharts in the above embodiments are divided according to the main processing content to make each process easier to understand. The method of classifying the processing steps does not limit the present invention. Each process can be divided into more processing steps. Furthermore, one processing step may execute more processes.

[0109] The means and methods for performing various processes in the systems according to the above-described embodiments can be realized by either dedicated hardware circuits or a programmed computer. The programs may be provided, for example, on a computer-readable recording medium such as a flexible disk or CD-ROM, or online via a network such as the Internet. In this case, the programs recorded on the computer-readable recording medium are typically transferred to and stored in a storage unit such as a hard disk. The programs may also be provided as standalone application software or may be incorporated into the software of the device as a function of the system. [Explanation of symbols]

[0110] 1. Plasma processing equipment 10 stage system, 11, 11A, 11B stages, 12 lift pins, 13 X-direction drive unit, 14 Y-direction drive unit, 15 Rotation drive unit, 16 Z-direction drive unit, 17 Edge Ring, 20 plasma generation system, 23 nozzles, 24 Gas supply section, 30 exhaust system, 40 laser light generating unit, 41 light source, 42 Diffusing lenses, 43 Z-axis direction convergent lens, 44 X-axis direction convergent lens, 45 focal lens, 46 reflector, 47 beam splitter, 50 detection unit, 51 condenser lens, 52 bandpass filters, 53 Photoelectric conversion element, 54 pixel circuits, 60 Information Processing Department, 61 CPUs, 62 ROMs, 63 RAM, 64 storage, 65 communication interface, 66 Operation display section, 67 bus, 70 boards, 80 active species, 90,90A,90B laser sheet, 100 chambers, 110 viewport, 120, 120A, 12B damper 130 shutter room, 131 shutter, 132 shutter drive unit, 161 Bellows structure.

Claims

1. a stage having a mounting surface on which a substrate can be placed; an active species emitting unit that emits active species or active species raw materials for plasma processing of the substrate toward the stage; a laser light generating unit that forms a laser sheet in an observation area including at least a part of an area between the placement surface and the active species emitting unit; a detection unit for detecting excited luminescence generated in the observation region; Equipped with A plasma processing device, wherein the quenching length of the excited emission is 20 nanoseconds or less.

2. The plasma processing apparatus according to claim 1 , wherein the excited emission is caused by the activated species excited by the laser sheet.

3. 2. The plasma processing apparatus according to claim 1, further comprising a chamber in which the stage and the activated species emitter are housed.

4. The chamber contains by-products produced by the plasma processing; The plasma processing apparatus according to claim 3 , wherein the excited light emission is generated by the by-product excited by the laser sheet.

5. The plasma processing apparatus according to claim 1 , wherein the laser light generating unit forms a main surface of the laser sheet in a direction intersecting the placement surface.

6. The plasma processing apparatus according to claim 1 , wherein the laser light generating unit forms a main surface of the laser sheet in a direction parallel to the placement surface.

7. The plasma processing apparatus according to claim 1 , wherein the laser light generating unit is configured to be able to change the wavelength of the light that constitutes the laser sheet.

8. The plasma processing apparatus according to claim 1 , wherein the laser light generating unit includes a light source that emits a beam of light and a lens unit that forms the laser sheet from the beam of light.

9. Further comprising a reflector; the laser sheet includes a first portion and a second portion adjacent to each other with the reflector therebetween, The plasma processing apparatus according to claim 1 , wherein the main surface of the second portion is formed in a direction intersecting the main surface of the first portion.

10. 2. The plasma processing apparatus according to claim 1, wherein the width of the laser sheet is 50 mm or less.

11. The plasma processing apparatus according to claim 1 , further comprising a damper provided at a position corresponding to an end of the laser sheet.

12. The plasma processing apparatus according to claim 1 , wherein the detection unit is provided at a position facing a main surface of the laser sheet.

13. The plasma processing apparatus according to claim 1 , wherein the detection unit includes a SPAD.

14. The plasma processing apparatus according to claim 1 , comprising a plurality of said stages.

15. 2. The plasma processing apparatus according to claim 1, further comprising a shutter configured to be switchable between a closed state that covers the mounting surface and an open state that exposes the mounting surface.

16. 3. The plasma processing apparatus according to claim 2, further comprising an information processing unit that generates first activated species information relating to a state of the activated species based on first light emission information relating to the excited light emission imaged at a first time.

17. the information processing unit determines a first condition for the plasma processing based on the generated first activated species information; the information processing unit generates second active species information on a state of the active species based on second light emission information on the excited light emission captured at a second time later than the first time; The plasma processing apparatus according to claim 16 , wherein the information processing unit determines whether or not to change the first condition based on the generated second activated species information.

18. 18. The plasma processing apparatus according to claim 17, wherein the information processing unit, when determining to change the first condition, determines a second condition for the plasma processing that is different from the first condition.

19. 2. The plasma processing apparatus according to claim 1, wherein the plasma processing is an etching process.

20. emitting active species or active species precursor from the active species emitting unit toward a stage on which a substrate can be placed; forming a laser sheet in an observation region including at least a portion of the region between the mounting surface of the stage and the active species emitter; detecting the excited luminescence generated in the observation region; Including, A plasma processing method, wherein the quenching length of the excited emission is 20 nanoseconds or less.

Images