Heat treatment apparatus and power control method

Abstract

To cope with demand response.SOLUTION: The heat treatment apparatus includes a reaction tube, a heater, a power supply unit, a heat storage material, and a control unit. The reaction tube can house a substrate and is formed of quartz. The heater is provided to surround the periphery of the reaction tube, and generates heat when power is supplied. The power supply unit is configured to supply power to the heater. The heat storage material is provided at least between the reaction tube and the heater, and is configured to be capable of storing heat. The controller is configured to control power supply from the power supply to the heater.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a heat treatment apparatus and a power control method. [Background technology]

[0002] Patent Document 1 listed below discloses a heat treatment system comprising: a heating means for heating the inside of a treatment chamber that accommodates a plurality of workpieces; a pressure adjusting means for adjusting the pressure inside the treatment chamber; a heat treatment condition storage means for storing heat treatment conditions according to the heat treatment content, including the temperature inside the treatment chamber heated by the heating means and the pressure inside the treatment chamber adjusted by the pressure adjusting means; a heat treatment change model storage means for storing a heat treatment change model that shows the relationship between changes in the temperature and pressure inside the treatment chamber and changes in the heat treatment result; a heat treatment execution means for executing the heat treatment conditions stored in the heat treatment condition storage means; and a calculation means for calculating the temperature and pressure that will result in the target heat treatment result, based on the heat treatment result executed by the heat treatment execution means, the target heat treatment result, and the heat treatment change model stored in the heat treatment change model storage means. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2017-098464 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides techniques for addressing demand response. [Means for solving the problem]

[0005] A heat treatment apparatus according to one aspect of the present disclosure includes a reaction tube, a heater, a power supply unit, a heat storage material, and a control unit. The reaction tube is capable of accommodating a substrate and is made of quartz. The heater is provided to surround the reaction tube and generates heat when power is supplied. The power supply unit is configured to supply power to the heater. The heat storage material is provided at least between the reaction tube and the heater and is configured to store heat. The control unit is configured to control the power supply from the power supply unit to the heater. [Effects of the Invention]

[0006] According to the present disclosure, demand response can be accommodated. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram showing an example of a schematic configuration of a heat treatment apparatus according to an embodiment. [Figure 2] FIG. 2 is a diagram showing an example of the configuration of the heat storage material according to the embodiment. [Figure 3] FIG. 3 is a diagram illustrating the operating principle of the heat storage material according to the embodiment. [Figure 4] FIG. 4 is a flowchart showing an example of the flow of the power control process according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the heat treatment apparatus and the power control method disclosed in the present application will be described in detail with reference to the drawings. However, the heat treatment apparatus and the power control method disclosed are not limited to the embodiments.

[0009] In the manufacturing process of semiconductor devices, a batch-type heat treatment apparatus is used to simultaneously perform film formation, oxidation, diffusion, or other processes on multiple substrates. The heat treatment apparatus places multiple substrates in a reaction tube made of quartz, supplies power to heaters arranged around the reaction tube, and heats the reaction tube to perform heat treatment on the substrates. Some heat treatments require a long process time, such as several hours. The heat treatment apparatus rotates the substrates in the reaction tube and performs heat treatment day and night.

[0010] Meanwhile, power generation using renewable energy sources such as solar and wind power is becoming more common. However, power generation from renewable energy sources is subject to large fluctuations in the amount of power generated. To ensure a stable supply of electricity, it is necessary to match power demand (amount consumed) with supply (amount generated). Demand response has attracted attention as a mechanism for adjusting the balance between power supply and demand. Demand response requires that power consumers control their power demand according to the power supply situation.

[0011] Therefore, there is a need for technology that enables heat treatment equipment to respond to demand.

[0012] [Embodiment] [Device configuration] An example of a heat treatment apparatus according to the present disclosure will be described. FIG. 1 is a diagram showing an example of a schematic configuration of a heat treatment apparatus 10 according to an embodiment. The heat treatment apparatus 10 has a reaction tube 11 that is substantially cylindrical and has a ceiling. The reaction tube 11 is arranged so that the cylindrical axis faces vertically. The reaction tube 11 is made of a material having excellent heat resistance and corrosion resistance, such as quartz.

[0013] A substantially cylindrical manifold 12 is provided below the reaction tube 11. The upper end of the manifold 12 is airtightly joined to the lower end of the reaction tube 11. An exhaust pipe 13 for exhausting gas inside the reaction tube 11 is airtightly connected to the manifold 12. The exhaust pipe 13 is provided with a pressure adjusting unit 14 including a valve, a vacuum pump, etc., and adjusts the pressure (degree of vacuum) inside the reaction tube 11 to a desired level.

[0014] The manifold 12 is also provided with a gas supply pipe 15 that supplies a process gas into the reaction tube 11. The gas supply pipe 15 is connected to a gas supply unit 16. The gas supply unit 16 is configured to be able to supply various gases used in the heat treatment. For example, the gas supply unit 16 includes gas sources and flow rate controllers for the various gases used in the heat treatment. The gas supply unit 16 supplies the various gases from the gas sources to the gas supply pipe 15 via the respective flow rate controllers. The process gas supplied to the gas supply pipe 15 is supplied into the reaction tube 11.

[0015] A lid body 17 is disposed below the manifold 12. The lid body 17 is configured to be movable up and down by a boat elevator 18. When the lid body 17 is raised by the boat elevator 18, the lower side (furnace opening portion) of the manifold 12 is closed. When the lid body 17 is lowered by the boat elevator 18, the lower side (furnace opening portion) of the reaction tube 11 is opened.

[0016] A boat 20 is provided above the lid 17 via a heat-retaining cylinder 19 made of a heat insulator. The boat 20 is configured to be able to accommodate a plurality of substrates W such as semiconductor wafers at predetermined intervals in the vertical direction. The substrates W are loaded into the reaction tube 11 by placing the substrates W in the boat 20 and raising the lid 17 with the boat elevator 18.

[0017] A heater 21 made of, for example, a resistance heating element is provided around the reaction tube 11 so as to surround the reaction tube 11. A power supply unit 23 is connected to the heater 21 via wiring 22. The power supply unit 23 is configured to be able to supply power to the heater 21. The heater 21 generates heat when power is supplied from the power supply unit 23. The power supply unit 23 is able to control the temperature of the heater 21 by changing the power supplied to the heater 21. The heater 21 heats the inside of the reaction tube 11 to a predetermined temperature, and as a result, the substrate W is heated to the predetermined temperature.

[0018] A container 30 is provided around the heater 21 so as to surround the heater 21. The container 30 is configured so as to surround the heater 21 and the top and side surfaces of the reaction tube 11.

[0019] A heat storage material 31 is provided inside the vessel 30 at least between the reaction tube 11 and the heater 21. In this embodiment, the heat storage material 31 is formed in a granular shape and provided so as to fill the inside of the vessel 30. In Fig. 1, the region in the vessel 30 where the heat storage material 31 is provided is shown by a dotted pattern. The reaction tube 11 and the heater 21 are surrounded by the heat storage material 31.

[0020] FIG. 2 is a diagram showing an example of the configuration of the heat storage material 31 according to the embodiment. The heat storage material 31 has a core 31a and a shell 31b covering the core 31a. The heat storage material 31 stores latent heat by utilizing the phase change between liquid and solid of the core 31a. The core 31a is made of a phase change material (PCM) that undergoes a phase change between liquid and solid within the temperature range in which the heat treatment is performed on the substrate W in the heat treatment apparatus 10. For example, if the temperature range of the heat treatment is 500 to 800°C, the core 31a is made of a latent heat storage material having a melting point between 500 and 800°C. For example, the core 31a is made of an alloy of Al, Cu, Fe, or the like. The shell 31b is made of a material that has a melting point higher than the temperature range of the heat treatment and does not react with the latent heat storage material. For example, the shell 31b is made of ceramics such as Al2O3 or SiC (silicon carbide). This allows the heat storage material 31 to maintain its shape within the temperature range of the heat treatment.

[0021] FIG. 3 is a diagram illustrating the operating principle of the heat storage material 31 according to the embodiment. FIG. 3 shows the relationship between the temperature and the accumulated heat capacity near the melting point of the heat storage material 31. When the accumulated heat capacity of the solid heat storage material 31 increases due to heating, the temperature rises to the melting point. When the temperature of the heat storage material 31 reaches the melting point, the temperature rise stops temporarily even if the accumulated heat capacity increases due to heating, and the heat storage material 31 undergoes a phase change from solid to liquid. When the heat storage material 31 changes to liquid, the temperature rises in accordance with the increase in accumulated heat capacity due to heating. The liquid heat storage material 31 stores the difference in accumulated heat capacity at the melting point as latent heat. When the temperature of the liquid heat storage material 31 drops to the melting point, it releases the latent heat stored as it undergoes a phase change to solid.

[0022] Returning to FIG. 1, the container 30 is covered by a housing 40. An exhaust port 40a is formed in the housing 40. A heat insulating material 41 is provided between the container 30 and the housing 40. In the heat treatment device 10, the heat insulating material 41 is provided between the container 30 and the housing 40 to insulate the container 30, and exhausting air from the exhaust port 40a prevents the temperature of the housing 40 from becoming excessively high.

[0023] The heat treatment apparatus 10 configured as described above includes a control unit 50. The control unit 50 is, for example, a computer, and controls each unit of the heat treatment apparatus 10. For example, the control unit 50 outputs control signals to the pressure adjustment unit 14, the gas supply unit 16, the power supply unit 23, etc., to control the pressure in the reaction tube 11, the gas flow rate, and the temperature of the treatment atmosphere.

[0024] [Heat treatment process] Next, a flow of forming a film on a substrate W by heat treatment using the heat treatment apparatus 10 according to the embodiment will be briefly described. When the heat treatment apparatus 10 loads or unloads a substrate W into or from the reaction tube 11, the boat elevator 18 is lowered. A plurality of substrates W to be subjected to film formation are stored in the boat 20. The heat treatment apparatus 10 raises the boat elevator 18 to load the boat 20 containing the plurality of substrates W into the reaction tube 11, and closes the lower opening of the reaction tube 11 with the lid 17.

[0025] When forming a film on the substrate W in the reaction tube 11 by heat treatment, the control unit 50 controls the pressure adjustment unit 14 to adjust the pressure (vacuum level) in the reaction tube 11 to a predetermined level. The control unit 50 also controls the gas supply unit 16 to supply process gases for film formation from the gas supply unit 16 into the reaction tube 11 at predetermined flow rates. For example, when forming an SiO (silicon oxide) film by ALD (atomic layer deposition), the gas supply unit 16 alternately supplies trisdimethylaminosilane gas (3DMAS) and ozone gas (O3) as process gases. For example, when forming an SiN (silicon nitride) film by ALD, the gas supply unit 16 alternately supplies trisdimethylaminosilane gas (3DMAS) and ammonia gas (NH3) as process gases. The control unit 50 also controls the power supply unit 23 to supply power to the heater 21, causing the heater 21 to generate heat and control the temperature of the reaction tube 11 within the temperature range for heat treatment, thereby forming a film by heat treatment on the substrate W. For example, when forming an SiO or SiN film by ALD, the control unit 50 controls the temperature of the reaction tube 11 within the temperature range of 500 to 800°C.

[0026] Some heat treatments require long process times. For example, when forming an SiO or SiN film on a substrate W by ALD, the process time can be as long as several hours to several dozen hours. The heat treatment apparatus 10 performs heat treatment day and night by rotating the substrates W in the reaction tube 11.

[0027] Meanwhile, power generation using renewable energy sources such as solar and wind power is becoming widespread. However, the amount of power generated by renewable energy sources fluctuates greatly. For this reason, renewable energy power generation can sometimes result in output curtailment, resulting in surplus power. For example, with solar power generation, excessive power generation can occur during the day, resulting in output curtailment and surplus power. To ensure a stable supply of electricity, it is necessary to match power demand (amount consumed) with supply (amount generated). Demand response is attracting attention as a mechanism for adjusting the balance between power demand and supply. Demand response requires that power consumers control their power demand according to the power supply situation.

[0028] Therefore, the control unit 50 controls the power supply from the power supply unit 23 to the heater 21 according to the power supply situation. For example, the control unit 50 controls the power supply unit 23 to increase the power supply to the heater 21 during the day and to decrease the power supply to the heater 21 at night. For example, the control unit 50 controls the power supply unit 23 to supply power to the heater 21 during the day so that the reaction tube 11 is in a temperature range for performing heat treatment and to stop the power supply to the heater 21 at night. Daytime refers to the time period from sunrise to sunset. Nighttime refers to the time period from sunset to sunrise. Daytime and nighttime may be determined corresponding to the times of sunrise and sunset for each day, or may be determined as standard time periods. In this embodiment, daytime refers to the time period from 6:00 to 18:00, for example, and nighttime refers to the time period from 18:00 to 6:00 the next day, for example.

[0029] In the heat treatment apparatus 10, the heater 21 generates heat during the day, thereby heating the reaction tube 11 and also heating the heat storage material 31, and storing heat in the heat storage material 31. Furthermore, even when the power supply to the heater 21 is stopped or reduced during the night, the heat treatment apparatus 10 releases the heat stored in the heat storage material 31.

[0030] The heat storage material 31 provided in the container 30 preferably has a heat capacity capable of maintaining the temperature of the reaction tube 11 within the temperature range of the heat treatment during the process time for performing the heat treatment on the substrate W, even when the power supply from the power supply unit 23 to the heater 21 is stopped. For example, the heat capacity required to maintain the temperature of the reaction tube 11 within the temperature range of the heat treatment during the process time is set to 0.7 G [J]. If the heat capacity per unit deposition of the heat storage material 31 is 0.5 G [J / m 3 In this case, the heat treatment device 10 has a volume of 1.5 m inside the container 30. 3 By providing the heat storage material 31 of this order, the temperature of the reaction tube 11 can be maintained within the temperature range for heat treatment during the process time even when the power supply to the heater 21 is stopped.

[0031] As a result, even if the power supply to the heater 21 is stopped or reduced at night, the heat treatment apparatus 10 can maintain the temperature of the reaction tube 11 within the heat treatment temperature range during the process time, thereby enabling film formation on the substrate W by heat treatment. Furthermore, the heat treatment apparatus 10 supplies power to the heater 21 during the daytime, when the amount of power generated by solar power generation is likely to be excessive, to generate heat and store the heat in the heat storage material 31, and then stops or reduces the power supply to the heater 21 at night. This allows the heat treatment apparatus 10 to control power demand according to the power supply situation and respond to demand response. Furthermore, the heat treatment apparatus 10 can reduce power consumption at night by stopping or reducing the power supply to the heater 21 at night.

[0032] Here, if the heat capacity of the heat storage material 31 provided in the container 30 is smaller than the heat capacity required to maintain the temperature of the reaction tube 11 within the temperature range of the heat treatment, there is a risk that the temperature of the reaction tube 11 will fall below the temperature range of the heat treatment during the nighttime heat treatment.

[0033] Therefore, when the temperature of the reaction tube 11 drops below the temperature range for the heat treatment at night, the control unit 50 controls the power supply from the power supply unit 23 to the heater 21 to increase the power supply so that the temperature of the reaction tube 11 falls within the temperature range for the heat treatment. For example, the control unit 50 controls the power supply from the power supply unit 23 to the heater 21 to be less than the power supplied to the heater 21 during the day. This allows the heat treatment apparatus 10 to return the temperature of the reaction tube 11 to within the temperature range for the heat treatment, thereby enabling stable heat treatment of the substrates W.

[0034] [Power control process flow] Next, an example of the flow of power control processing including the power control method of the present disclosure using the heat treatment apparatus 10 configured as described above will be described. FIG. 4 is a flowchart showing an example of the flow of power control processing according to the embodiment. The control unit 50 controls the power supply from the power supply unit 23 to the heater 21 depending on the power supply situation. Below, a case will be described in which the control unit 50 controls the power supply to the heater 21 during the day and at night. The power control processing in FIG. 4 is executed periodically at a predetermined timing, such as every fixed time.

[0035] The control unit 50 determines whether or not it is currently daytime (step S10).

[0036] If it is currently daytime (step S10: Yes), the control unit 50 controls the power supply unit 23 to supply power to the heater 21 so that the reaction tube 11 is in the temperature range for performing the heat treatment (step S11), and then ends the process.

[0037] On the other hand, if it is currently nighttime and not daytime (step S10: No), the control unit 50 controls the power supply unit 23 to stop the power supply to the heater 21 (step S12), and ends the process. Note that in step S12, the control unit 50 may control the power supply unit 23 to reduce the power supply to the heater 21 without stopping the power supply to the heater 21.

[0038] In the above embodiment, the heat storage material 31 is configured to store heat by latent heat storage. However, this is not limiting. The heat storage material 31 may be configured to store heat by chemical heat storage or sensible heat storage.

[0039] In the above embodiment, a single heater 21 is provided to surround the reaction tube 11, and the single heater 21 heats the entire reaction tube 11 in the axial direction. However, the present invention is not limited to this. The heaters 21 may be provided in separate regions along the axis of the reaction tube 11. As heat rises, the temperature of the reaction tube 11 tends to become higher at the upper side, which tends to result in temperature non-uniformity in the vertical direction. The control unit 50 may increase the power supplied from the power supply unit 23 to the heaters 21 located lower on the axis of the reaction tube 11, thereby controlling the temperature of the heaters 21 to be higher at the lower side. Furthermore, the heat storage material 31 may be arranged in a larger amount at the lower side of the reaction tube 11. This can prevent the temperature of the reaction tube 11 from becoming non-uniform in the vertical direction.

[0040] In the above embodiment, the process gas is supplied from one gas supply pipe 15 into the reaction tube 11. However, the present invention is not limited to this. The process gas may be supplied from multiple gas supply pipes 15 at multiple vertical positions in the reaction tube 11, and the process gas may be supplied into the reaction tube 11 from multiple vertical positions in the reaction tube 11.

[0041] As described above, the heat treatment apparatus 10 according to the embodiment includes the reaction tube 11, the heater 21, the power supply unit 23, the heat storage material 31, and the control unit 50. The reaction tube 11 is capable of accommodating a substrate W and is made of quartz. The heater 21 is provided to surround the reaction tube 11 and generates heat when power is supplied. The power supply unit 23 is configured to supply power to the heater 21. The heat storage material 31 is provided at least between the reaction tube 11 and the heater 21 and is configured to store heat. The control unit 50 is configured to control the power supply from the power supply unit 23 to the heater 21. This enables the heat treatment apparatus 10 according to the embodiment to respond to demand.

[0042] The heat storage material 31 is provided so as to surround the periphery of the reaction tube 11. As a result, the heat treatment apparatus 10 according to the embodiment can heat the reaction tube 11 evenly from the periphery with the heat stored in the heat storage material 31.

[0043] Furthermore, the heat storage material 31 has a heat capacity that can maintain the temperature of the reaction tube 11 within the temperature range of the heat treatment during the process time for performing the heat treatment on the substrate W, even when the power supply from the power supply unit 23 to the heater 21 is stopped. As a result, the heat treatment apparatus 10 according to the embodiment can perform the heat treatment on the substrate W using the heat stored in the heat storage material 31, even when the power supply to the heater 21 is stopped.

[0044] The reaction tube 11, the heater 21, and the heat storage material 31 are provided in a container 30 covered with a heat insulating material 41. This allows the heat treatment apparatus 10 according to the embodiment to improve the heat insulation inside the container 30 and suppress a decrease in the temperature inside the container 30 during heat treatment.

[0045] The heat storage material 31 is configured to be able to store heat by any one of latent heat storage, chemical heat storage, and sensible heat storage, thereby allowing the heat treatment device 10 according to the embodiment to store heat by heat storage.

[0046] The heat storage material 31 is constructed by covering a latent heat storage material having a melting point within the temperature range in which heat treatment is performed on the substrate W with a material having a melting point higher than the temperature range of the heat treatment. This allows the heat storage material 31 to store and release a large amount of heat at the melting point of the latent heat storage material. The heat storage material 31 can also maintain its shape within the temperature range of the heat treatment.

[0047] Furthermore, the control unit 50 controls the power supply from the power supply unit 23 to the heater 21 according to the power supply situation. This allows the heat treatment apparatus 10 according to the embodiment to respond to demand.

[0048] Furthermore, the control unit 50 controls the power supply unit 23 so as to increase the power supply to the heater 21 during the day and decrease the power supply to the heater 21 at night. This allows the heat treatment apparatus 10 according to the embodiment to reduce power consumption at night.

[0049] Furthermore, the control unit 50 controls the power supply unit 23 to stop the power supply to the heater 21 at night. This allows the heat treatment apparatus 10 according to the embodiment to reduce power consumption at night.

[0050] Furthermore, when the control unit 50 receives a notification of output suppression of solar power generation, it controls the power supply unit 23 to increase the power supply to the heater 21 during the daytime. As a result, the heat treatment device 10 according to the embodiment can store a lot of heat in the heat storage material 31 during the daytime when a lot of power is generated by solar power generation, and can respond to demand response.

[0051] Furthermore, if the temperature of the reaction tube 11 drops below the temperature range for performing heat treatment on the substrates W during the night, the control unit 50 controls the power supply from the power supply unit 23 to the heater 21 to increase the power supply so that the temperature of the reaction tube 11 falls within the temperature range. As a result, the heat treatment apparatus 10 according to the embodiment can return the temperature of the reaction tube 11 to within the temperature range for heat treatment, thereby enabling stable heat treatment on the substrates W.

[0052] Although the embodiments have been described above, the disclosed embodiments should be considered to be illustrative in all respects and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the claims.

[0053] In the above embodiment, the heat treatment is performed on a semiconductor wafer as the substrate W, but the present invention is not limited to this. The substrate W may be a glass substrate or the like.

[0054] In addition, the following supplementary notes are disclosed regarding the above-described embodiment.

[0055] (Appendix 1) a reaction tube made of quartz capable of accommodating a substrate; a heater provided to surround the reaction tube and generating heat when power is supplied thereto; a power supply unit configured to supply power to the heater; a heat storage material provided at least between the reaction tube and the heater and configured to be able to store heat; a control unit configured to control a power supply from the power supply unit to the heater; A heat treatment device comprising:

[0056] (Appendix 2) The heat storage material is provided so as to surround the periphery of the reaction tube. 2. The heat treatment device of claim 1.

[0057] (Appendix 3) The heat storage material has a heat capacity capable of maintaining the temperature of the reaction tube within the temperature range of the heat treatment during the process time for performing the heat treatment on the substrate, even when the power supply from the power supply unit to the heater is stopped. 3. The heat treatment apparatus according to claim 1 or 2.

[0058] (Appendix 4) The reaction tube, the heater, and the heat storage material were installed in a container covered with a heat insulating material. 4. The heat treatment device according to any one of claims 1 to 3.

[0059] (Appendix 5) The heat storage material is configured to be able to store heat by any one of latent heat storage, chemical heat storage, and sensible heat storage. 5. The heat treatment device according to any one of appendices 1 to 4.

[0060] (Appendix 6) The heat storage material is configured by covering a latent heat storage material having a melting point within a temperature range in which heat treatment is performed on the substrate with a material having a melting point higher than the temperature range of the heat treatment. 6. A heat treatment apparatus according to any one of appendices 1 to 5.

[0061] (Appendix 7) The control unit controls the power supply from the power supply unit to the heater according to a power supply situation. 7. The heat treatment device according to any one of appendices 1 to 6.

[0062] (Appendix 8) The control unit controls the power supply unit to increase the power supply to the heater during the day and to decrease the power supply to the heater at night. 8. The heat treatment device of claim 7.

[0063] (Appendix 9) The control unit controls the power supply unit to stop supplying power to the heater at night. 9. The heat treatment device of claim 8.

[0064] (Appendix 10) When the control unit receives a notification of output suppression of photovoltaic power generation, the control unit controls the power supply unit to increase power supply to the heater during the day. 10. The heat treatment device according to claim 8 or 9.

[0065] (Appendix 11) When the temperature of the reaction tube falls below a temperature range for performing heat treatment on the substrate during the night, the control unit increases the power supply from the power supply unit to the heater to control the temperature of the reaction tube to be within the temperature range. 11. The heat treatment device according to any one of appendices 8 to 10.

[0066] (Appendix 12) a reaction tube made of quartz capable of accommodating a substrate; a heater provided to surround the reaction tube and generating heat when power is supplied thereto; a power supply unit configured to supply power to the heater; a heat storage material provided at least between the reaction tube and the heater and configured to be able to store heat; A power control method for a heat treatment apparatus having: a step of controlling the power supply from the power supply unit to the heater according to the power supply status; A power control method comprising: [Explanation of symbols]

[0067] 10 Heat treatment device 11 Reaction tube 12 Manifold 13 Exhaust pipe 14 Pressure adjustment section 15 Gas supply pipe 16 Gas supply section 17 Lid 18 Boat Elevator 19 Heat insulation tube 20 Boat 21 Heater 22 Wiring 23 Power supply section 30 containers 31 Heat storage material 31a Core 31b Shell 40 cabinets 40a exhaust port 41 Insulation 50 control section W substrate

Claims

1. a reaction tube made of quartz capable of accommodating a substrate; a heater provided to surround the reaction tube and generating heat when power is supplied thereto; a power supply unit configured to supply power to the heater; a heat storage material provided at least between the reaction tube and the heater and configured to be able to store heat; a control unit configured to control a power supply from the power supply unit to the heater; A heat treatment device comprising:

2. The heat storage material is provided so as to surround the periphery of the reaction tube. The heat treatment apparatus according to claim 1 .

3. The heat storage material has a heat capacity capable of maintaining the temperature of the reaction tube within the temperature range of the heat treatment during the process time for performing the heat treatment on the substrate, even when the power supply from the power supply unit to the heater is stopped. The heat treatment apparatus according to claim 1 .

4. The reaction tube, the heater, and the heat storage material were installed in a container covered with a heat insulating material. The heat treatment apparatus according to claim 1 .

5. The heat storage material is configured to be able to store heat by any one of latent heat storage, chemical heat storage, and sensible heat storage. The heat treatment apparatus according to claim 1 .

6. The heat storage material is configured by covering a latent heat storage material having a melting point within a temperature range in which heat treatment is performed on the substrate with a material having a melting point higher than the temperature range of the heat treatment. The heat treatment apparatus according to claim 1 .

7. The control unit controls the power supply from the power supply unit to the heater according to a power supply situation. The heat treatment apparatus according to claim 1 .

8. The control unit controls the power supply unit to increase the power supply to the heater during the day and to decrease the power supply to the heater at night. The heat treatment apparatus according to claim 7 .

9. The control unit controls the power supply unit to stop supplying power to the heater at night. The heat treatment apparatus according to claim 8 .

10. When the control unit receives a notification of output suppression of photovoltaic power generation, the control unit controls the power supply unit to increase power supply to the heater during the day. The heat treatment apparatus according to claim 8 .

11. When the temperature of the reaction tube falls below a temperature range for performing heat treatment on the substrate during the night, the control unit increases the power supply from the power supply unit to the heater to control the temperature of the reaction tube to be within the temperature range. The heat treatment apparatus according to claim 8 .

12. a reaction tube made of quartz capable of accommodating a substrate; a heater provided to surround the reaction tube and generating heat when power is supplied thereto; a power supply unit configured to supply power to the heater; a heat storage material provided at least between the reaction tube and the heater and configured to be able to store heat; A power control method for a heat treatment apparatus having: a step of controlling the power supply from the power supply unit to the heater according to the power supply status; A power control method comprising:

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