Semiconductor device and method for manufacturing the same

Abstract

To provide a highly productive semiconductor device and a method for manufacturing the same. [Solution] The semiconductor device according to this disclosure comprises a die pad, a suspension lead, a plurality of leads, a plating film formed on the plating film formation region of each of the plurality of leads, a semiconductor chip mounted on the die pad and having a plurality of electrode pads, a plurality of wires electrically connecting the plurality of leads and the plurality of electrode pads, each having a ball portion and a stitch portion, and a resin encapsulant that seals the plurality of leads, the semiconductor chip, and the wires. In a plan view, the plating film formation region comprises a first portion and a second portion located further from the semiconductor chip than the first portion and wider than the first portion. The stitch portion is joined to the second portion via the plating film.

Description

Technical Field

[0004] ,

[0006] , , , , , ,

[0005] , , ,

[0003] , , , , , , , ,<000003​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​ The device comprises the plurality of leads, the semiconductor chip, and a resin encapsulant that seals the wires, The aforementioned plating film formation region, in plan view, Part 1 and, A second portion is located further from the semiconductor chip than the first portion and is wider than the first portion, Equipped with, The stitched portion is joined to the second portion via the plating film.

[0007] A method for manufacturing a semiconductor device according to one aspect of the present disclosure includes the steps of preparing a lead frame having a die pad, a plurality of suspension leads supporting the die pad, and a plurality of leads arranged between the plurality of suspension leads, The steps include mounting a semiconductor chip having multiple electrode pads onto the die pad, The steps include sequentially wire bonding the plurality of leads and the plurality of electrode pads, The method includes the step of sealing the semiconductor chip and the die pad with a resin encapsulant. Each of the aforementioned plurality of leads has a plating film forming region on which a plating film is formed, The aforementioned plating film formation region is Part 1 and, It comprises a second portion which is located further from the semiconductor chip than the first portion and is wider than the first portion, In the wire bonding step, The ball portion at the tip of the wire is attached to the electrode pad. The stitch portion of the wire is joined to the second portion via the aforementioned plating film. [Effects of the Invention]

[0008] This disclosure provides a highly productive semiconductor device and a method for manufacturing the same. [Brief explanation of the drawing]

[0009] [Figure 1]It is an XY plan view schematically showing the configuration of the semiconductor device according to Embodiment 1. [Figure 2] It is an XZ cross-sectional view schematically showing the configuration of the semiconductor device according to Embodiment 1. [Figure 3] It is an XY plan view showing an enlarged view of the bonding portion between the lead and the wire in the semiconductor device according to Embodiment 1. [Figure 4] It is a cross-sectional view schematically showing the bonding portion between the lead and the wire. [Figure 5] It is a cross-sectional view schematically showing the configuration of the lead. [Figure 6] It is a schematic diagram for explaining the ball formation step A of the wire bonding process. [Figure 7] It is a schematic diagram for explaining the ball bond step B of the wire bonding process. [Figure 8] It is a schematic diagram for explaining the looping step C of the wire bonding process. [Figure 9] It is a schematic diagram for explaining the stitch bond step D of the wire bonding process. [Figure 10] It is a schematic diagram for explaining the tail cut step E of the wire bonding process. [Figure 11] It is a schematic diagram for explaining the carryover of the plating film at the time of tail cutting. [Figure 12] It is a schematic diagram for explaining the formation of the FAB when the ball portion is not eccentric in the ball formation step. [Figure 13] It is a schematic diagram for explaining the formation of the FAB when the ball portion is eccentric due to the adhesion of the plating film in the ball formation step. [Figure 14] It is a schematic diagram for explaining the normal configuration when the ball portion is not eccentric. [Figure 15] It is a schematic diagram for explaining the eccentric configuration when the ball portion is eccentric. [Figure 16] It is a cross-sectional view schematically showing the configuration of the lead after press working. [Figure 17]This is a schematic cross-sectional view showing the structure of a lead during bonding. [Figure 18] This is an XY plan view showing an enlarged view of the junction between the lead and the wire in the semiconductor device according to Comparative Example 1. [Figure 19] This is an XY plan view showing an enlarged view of the junction between the lead and the wire in the semiconductor device according to Comparative Example 2. [Figure 20] This is a flowchart showing the method for manufacturing a semiconductor device according to Embodiment 1. [Figure 21] This is an XY plan view showing the configuration of the matrix lead frame. [Figure 22] This is an XY plan view showing the configuration of the lead frame. [Figure 23] This is an XY plan view showing an enlarged view of the joint between the lead and the wire in the semiconductor device according to Embodiment 2. [Figure 24] This is an XY plan view showing an enlarged view of the junction between the lead and wire in the modified semiconductor device. [Figure 25] This is a schematic cross-sectional view showing the connection point between the lead and the wire. [Figure 26] This is an XY plan view showing an enlarged view of the junction between the lead and wire in the modified semiconductor device. [Modes for carrying out the invention]

[0010] The embodiments will be described below with reference to the drawings. Note that the drawings are simplified, and the technical scope of the embodiments should not be narrowly interpreted based on their depiction. Furthermore, the same elements are denoted by the same reference numerals, and redundant explanations are omitted.

[0011] (Embodiment 1) The configuration of the semiconductor device according to this embodiment 1 will be described using Figures 1 and 2. Figure 1 is an XY plan view schematically showing the configuration of the semiconductor device 100. Figure 2 is a side cross-sectional view showing the configuration of the semiconductor device 100. In the following description, for clarity, the XYZ three-dimensional Cartesian coordinate system will be used. The Z direction is the thickness direction of the semiconductor chip 10, and the +Z side will be considered the upper side. The XY plane is a plane parallel to the main surface of the semiconductor device 100. The X and Y directions are the arrangement directions in which the multiple leads 21 are arranged.

[0012] Here, the semiconductor device 100 is a 48-pin QFP (Quad Flat Package). Of course, the semiconductor device 100 is not limited to a QFP package, nor is the number of pins limited to 48.

[0013] The semiconductor device 100 comprises a semiconductor chip 10, a plurality of leads 21, suspension leads 22, a die pad 23, a plurality of wires 40, and a resin encapsulant 50. Note that the resin encapsulant 50 is omitted in Figure 1.

[0014] The semiconductor chip 10 is mounted on a die pad 23. For example, the semiconductor chip 10 is fixed to the die pad 23 via an adhesive or film. Suspension leads 22 are connected to the die pad 23. The suspension leads 22 extend from the four corners of the rectangular semiconductor device 100 toward the center. In Figure 1, four suspension leads 22 are provided, but the number of suspension leads 22 is not limited to four.

[0015] Multiple leads 21 are provided on the outer edge of the semiconductor chip 10. Each lead 21 extends from the outer edge of the semiconductor device 100 toward the semiconductor chip 10. The multiple leads 21 are arranged between two adjacent suspension leads 22. In this case, since there are 48 pins, 12 leads 21 are provided between two adjacent suspension leads 22. In other words, 12 leads 21 are arranged in a row on the outside of one end of the rectangular semiconductor chip 10. Some of the multiple leads 21 may be active leads, and the rest may be NC (Non-Contact) leads.

[0016] The lead 21 is formed from a copper alloy, iron alloy, nickel alloy, etc. For example, a lead frame is formed by pressing a thin sheet of alloy. Furthermore, the lead 21, suspension lead 22, and die pad 23 are formed by punching and bending the lead frame. As shown in Figure 2, the lead 21 comprises an inner lead 211 and an outer lead 212.

[0017] As shown in Figure 2, multiple electrode pads 12 are provided on the upper surface of the semiconductor chip 10. Each electrode pad 12 has a bonding surface 11 on its upper surface. A wire 40 is connected to the bonding surface 11 of the electrode pad 12. The wire 40 is a bonding wire such as a copper (Cu) wire. Of course, the material of the wire 40 may be other metallic materials or alloy materials such as gold (Au) or aluminum (Al).

[0018] Multiple wires 40 extend outward from the top of the semiconductor chip 10. The wires 40 connect the electrode pads 12 and the leads 21. That is, one end of the wire 40 contacts the lead 21, and the other end contacts the bonding surface 11 of the electrode pad 12. The leads 21 are electrically connected to the electrode pad 12 via the wires 40. The wires 40 are bonded to the electrode pad 12 and the leads 21 in the wire bonding process.

[0019] The end of the wire 40 on the semiconductor chip 10 side is designated as a ball portion 40a, and the end on the lead 21 side is designated as a stitch portion 40b. The ball portion 40a of the wire 40 is joined to the bonding surface 11. The stitch portion 40b of the wire 40 is joined to the lead 21.

[0020] As shown in Figure 2, the resin encapsulator 50 encapsulates the semiconductor chip 10, the multiple leads 21, and the multiple wires 40. The resin encapsulator 50 is formed from a resin material such as epoxy resin. The resin encapsulator 50 also encapsulates the die pad 23 and the suspension leads 22. The resin encapsulator 50 completely encapsulates the semiconductor chip 10 and the wires 40. The inner leads 211 of the multiple leads 21 are covered by the resin encapsulator 50. The outer leads 212 of the multiple leads 21 are positioned outside the resin encapsulator 50.

[0021] The configuration of the joint between the wire 40 and the lead 21 will be explained using Figures 3 to 5. Figure 3 is an enlarged XY plan view of the rectangular dashed frame portion A1 in Figure 1. Figure 4 is a cross-sectional view showing the configuration of the joint between the wire 40 and the lead 21. Note that Figure 4 shows the cross-sectional configuration along the lead direction. Figure 5 is a schematic cross-sectional view showing the configuration of the lead 21. Note that Figure 5 shows the cross-sectional configuration along the lead width direction.

[0022] The lead direction corresponds to the direction in which each lead 21 extends in an XY plane view, that is, the longitudinal direction of the lead 21. Furthermore, the lead direction differs for each lead 21. In the following explanation, we will focus on the lead 21 to the right of the suspension lead 22, and therefore the lead direction will also be indicated in relation to that lead 21. Also, in order to explain leads 21 lined up in the X direction, the lead width direction is parallel to the X direction.

[0023] The lead 21 has a plating film formation region 220. As shown in Figures 1 and 3, the plating film formation region 220 is located on the tip side (semiconductor chip 10 side) of the lead 21. A plating film 225 made of a conductive material such as silver (Ag) is formed in the plating film formation region 220. The plating film 225 is formed on the upper surface (top surface) of the lead 21. Therefore, the plating film 225 is formed on the surface of the lead 21 at the joint between the lead 21 and the wire 40 and its surrounding area. Note that the material of the plating film 225 is not limited to silver, but may also be nickel (Ni), etc. Furthermore, the plating film 225 may be a laminate of two or more metals.

[0024] Furthermore, the plating film formation region 220 has a first portion 221, a second portion 222, and a third portion 223. The first portion 221, the second portion 222, and the third portion 223 are arranged in that order from the tip of the lead 21 located on the semiconductor chip 10 side. The first portion 221 is the portion that includes the tip of the lead 21 located on the semiconductor chip 10 side. The second portion 222 is further away from the semiconductor chip 10 than the first portion 221. The third portion 223 is further away from the semiconductor chip 10 than the second portion 222. Therefore, the second portion 222 is located between the first portion 221 and the third portion 223.

[0025] The second part 222 is wider than the first part 221 and the third part 223. That is, the width (here, length in the X direction) of the second part 222 is greater than the width (here, length in the X direction) of the first part 221. Also, the width (here, length in the X direction) of the second part 222 is greater than the width (here, length in the X direction) of the third part 223. Specifically, in the lead width direction, the second part 222 comprises a main body 229 and a projection 226. The main body 229 has the same width as the first part 221. The projection 226 is a portion that protrudes from the main body 229 on both sides in the lead width direction. The projection 226 extends outside the first part 221 in the lead width direction. In the lead width direction, the size of the second part 222 is larger than the size of the first part 221 and the third part 223. Thus, the plating film formation region 220 has a second portion in the middle, and therefore its width changes in stages. Also, the first portion 221 and the third portion 223 have approximately the same width.

[0026] Furthermore, in the wider second portion 222, the stitch portion 40b of the wire 40 is joined to the lead 21. This increases the bonding strength between the wire 40 and the lead 21. Moreover, since only the second portion 222, which is part of the plating film formation region 220, needs to be widened, interfacial delamination of the resin encapsulant 50 can be prevented. Therefore, productivity can be improved. The reason for this is explained below.

[0027] Figures 6 to 10 are schematic diagrams illustrating the wire bonding process. Figure 11 is a schematic diagram showing a magnified view of the stitch portion 40b and its surroundings during tail cutting. The wire bonding process includes ball formation process A (Figure 6), ball bonding process B (Figure 7), looping process C (Figure 8), stitch bonding process D (Figure 9), and tail cutting process E (Figure 10). The wire bonding apparatus repeats ball formation process A, ball bonding process B, looping process C, stitch bonding process D, and tail cutting process E for each wire 40. In other words, once tail cutting process E is completed, ball formation process A is performed on the next wire 40.

[0028] The wire bonding apparatus comprises an ultrasonic horn 301, a capillary 302, and a discharge torch 303. The capillary 302 is attached to the ultrasonic horn 301. A wire 40 passes through the hollow portion of the capillary 302. The tip of the wire 40 is located on the underside of the capillary 302.

[0029] In ball formation process A, the discharge torch 303 generates a spark at the tip of the wire 40, melting the wire 40. This forms a ball portion 40a at the tip of the wire 40. Here, the ball portion 40a is a FAB (Free Air Ball) and is spherical in shape.

[0030] In ball bonding process B, the capillary 302 aligns the ball portion 40a, which is the FAB, directly above the bonding surface 11 and presses it against the bonding surface 11. Furthermore, a heater (not shown) heats the lead 21, and an ultrasonic horn 301 applies ultrasonic vibrations to the ball portion 40a. As a result, the ball portion 40a of the wire 40 is bonded to the bonding surface 11 (1st bond).

[0031] In looping step C, the capillary 302 moves to directly above the lead 21 so that the wire 40 forms a loop shape.

[0032] In stitch bonding process D, the capillary 302 aligns the wire 40 with the tip of the lead 21 and presses the wire 40 against the lead 21. A heater (not shown) heats the lead 21, and an ultrasonic horn 301 applies ultrasonic vibrations to the wire 40. As a result, the stitch portion 40b of the wire 40 is bonded to the lead 21 (2nd bond). Here, the stitch portion 40b of the wire 40 is bonded to the plating film formation region 220 of the lead 21 (see Figure 3).

[0033] In the tail-cutting process E, the capillary 302 lifts the wire 40 and cuts the tail of the wire 40. This completes the wire bonding of one wire 40. The wire bonding apparatus then moves on to the ball-forming process A of the next workpiece.

[0034] Here, between the tail-cutting process E and the ball-forming process A of the next workpiece, silver (Ag) constituting the plating film 225 may adhere to the wire 40. For example, the melting point of silver in the plating film 225 is 961°C. Also, the melting point of copper, the material of the wire 40, is 1084°C. During the tail-cutting of the wire 40, the difference in melting points causes silver to adhere to the wire 40. As a result, the molten state of the wire 40 changes, and the ball may become eccentric.

[0035] Specifically, in the tail-cutting process E, the wire 40 carries away a portion of the plating film 225. As shown in the enlarged view of Figure 11, an attachment portion 402 is formed on the wire 40 with a portion of the plating film 225 attached to it. In the subsequent ball-forming process A, the ball portion 40a is formed from the wire 40 with the attachment portion 402 attached.

[0036] In this case, the FAB of the ball portion 40a may become eccentric during ball formation process A. This point will be explained using Figures 12 to 15. Figures 12 and 13 are schematic diagrams illustrating the details of ball formation process A. Figure 12 shows the FAB formation under normal conditions when the plating film 225 is not attached, and Figure 13 shows the FAB formation when the plating film 225 is attached. Figure 14 is a schematic diagram illustrating the configuration under normal conditions when no eccentricity occurs, and Figure 15 is a schematic diagram illustrating the configuration when eccentricity occurs due to the attachment of the plating film 225. Furthermore, Figures 14 and 15 show SEM (Scanning Electron Microscope) images of the FAB under normal and eccentric conditions.

[0037] As shown in Figures 12 and 13, the ball portion 40a gradually enlarges due to the discharge from the discharge torch 303. Under normal conditions, the center of the ball portion 40a (FAB) lies on the extension of the wire 40 and the central axis of the capillary 302. On the other hand, when the plating film 225 is attached, the attachment portion 402 is formed on the tip of the wire 40. As a result, the center of the ball portion 40a (FAB) shifts from the extension of the wire 40 and the central axis of the capillary 302. In other words, when the plating film 225 is attached, the center of the FAB becomes eccentric from the center line of the wire 40. Furthermore, when the plating film 225 is attached, the FAB may not be a perfect sphere.

[0038] Figure 14 shows an SEM image of a normal, non-eccentric FAB, and Figure 15 shows an SEM image of an eccentric FAB. Using Figures 14 and 15, the difference between a normal FAB and an eccentric FAB in ball bonding process B will be explained. Under normal conditions, the ball portion 40a coincides with the center of the electrode pad 12. On the other hand, under eccentric conditions, the center of the ball portion 40a is offset from the center of the electrode pad 12. In other words, in an XY plane view, the ball portion 40a is eccentric from the electrode pad 12. In this case, the bonding stability between the ball portion 40a and the electrode pad 12 may decrease.

[0039] Therefore, in this embodiment 1, the wire bonding apparatus joins the stitch portion 40b of the wire 40 to the wide second portion 222. By doing so, wobbling caused by ultrasonic vibration can be suppressed in the stitch bonding process D.

[0040] In stitch bond process D, ultrasonic vibrations are applied to the lead 21 while it is placed on the bonding stage. In the manufacturing process of the lead 21, the lead 21 is formed by press working using a press die. Specifically, the lead 21 is formed by punching out a thin metal sheet from below. The structure of the lead 21 in the manufacturing process will be explained using Figures 16 and 17. Figures 16 and 17 are cross-sectional views of the lead 21 in the first part 221. In cross-sectional view, the lead 21 has an upper surface 241, a lower surface 246, and a side surface 247. Figure 16 shows the structure after press working, and Figure 17 shows the structure during bonding.

[0041] After press working, the thin metal sheet is punched out from the bottom. Therefore, as shown in Figure 16, burrs 242 are formed on the upper surface 241 of the lead 21, and the burrs 242 are formed on both ends of the upper surface 241. A burred surface 244 is formed on the lower surface 246. The burred surface 244 is the surface that connects the side surface 247 and the lower surface 246. The burred surface 244 has a gentle curved shape, as if the corners of the lower surface 246 and the side surface 247 have been chamfered. In other words, the burred surface 244 is formed on both ends of the lower surface 246 in the lead width direction. The burred surface 244 is a rounded surface at both ends of the lower surface 246. The space between the two burred surfaces 244 is a flat surface 245. Therefore, the lower surface 246 of the lead 21 is composed of two burred surfaces 244 and a flat surface 245.

[0042] Then, after deburring the upper surface 241, the upper surface 241 becomes almost flat during bonding. The overall width of the lead 21 is 0.147 mm, and the width of the flat portion of the upper surface 241 is 0.108 mm. On the other hand, the lower surface 246 has a sagging surface 244, so the width of the flat surface 245 is 0.086 mm. The thickness of the plating film 225 (not shown in Figure 17) is 4 μm.

[0043] If the width of the flat surface 245 is narrow, the lead 21 may become unstable due to the ultrasonic vibrations during the bonding process. Specifically, in the stitch bond process D, the lead 21 is supported by the flat surface 245 on the bonding stage. When the ultrasonic horn 301 applies ultrasonic vibrations to the lead 21, the lead 21 becomes unstable, and the silver from the plating film 225 adheres to the wire 40. Then, in the tail cut process E, the silver may be taken away.

[0044] Therefore, in this embodiment 1, the stitch portion 40b of the wire 40 is joined to the wide second portion 222. Even when ultrasonic vibration is applied, stability can be improved by joining the stitch portion 40b to the wide second portion 222. This allows the lead to be stabilized at the joint. In the tail-cutting process E, it is possible to suppress the adhesion of silver, which is part of the plating film 225, to the wire 40. Since eccentricity of the ball portion 40a can be prevented, the ball portion 40a can be joined to the center of the electrode pad 12. This improves the joint stability and thus improves productivity.

[0045] For example, the width of the second portion 222 is preferably 0.15 mm to 0.17 mm. This allows for a more stable bond. Also, for example, the width of the first portion 221 is preferably 0.11 mm to 0.13 mm. This improves adhesion. Furthermore, the width of one protrusion 226 may be 0.1 mm to 0.02 mm. Due to manufacturing errors such as press working, the width of each lead may deviate from the design value. Even in such cases, productivity can be improved by using the above widths.

[0046] For example, in Comparative Example 1 in Figure 18, the entire plating film formation region 220 has approximately the same width as the first portion 221 in Figure 3. In Comparative Example 1, the width of the lead in the stitch portion 40b of the wire 40 is not increased, so the fixing stability of the lead 21 is reduced compared to Embodiment 1. As a result, the silver (Ag) constituting the plating film 225 is more likely to be carried back, causing the ball portion 40a to become eccentric.

[0047] In contrast, in this embodiment 1, as shown in Figure 3, the width of the lead (i.e., the second portion 222) in the stitch portion 40b of the wire 40 is larger than that of the other portions (i.e., the first portion 221 and the third portion 223). Therefore, the lead 21 in the stitch portion 40b of the wire 40 can be stably fixed. In particular, even in configurations where lead fixing tape is not used in the bonding process, the lead 21 can be kept stable. Thus, eccentricity of the ball portion 40a can be prevented, and stable bonding becomes possible.

[0048] Furthermore, in this embodiment 1, as shown in Figure 3, only the second portion 222 is wider in the plating film formation region 220. This prevents an increase in the area of ​​the plating film 225, thereby improving the adhesion of the resin encapsulant 50.

[0049] For example, in Comparative Example 2 of Figure 19, the entire plating film formation region 220 has approximately the same width as the second portion 222 of Figure 3. In Comparative Example 2, the entire plating film formation region 220 is wider, resulting in a larger area of ​​the plating film formation region 220. Because the plating film 225 made of a conductive material has low adhesion to the resin sealant 50, the resin sealant 50 may peel off.

[0050] In contrast, in this embodiment 1, as shown in Figure 3, only the second portion 222 of the plating film formation region 220 is wider. This makes it possible to reduce the area of ​​the plating film formation region 220 compared to Comparative Example 2. This suppresses a decrease in the adhesion of the resin encapsulant 50, and therefore suppresses peeling of the resin encapsulant 50. Furthermore, the width of the lead 21 can be made narrower compared to Comparative Example 2. As a result, the lead 21 can be made finer pitched. (Method of manufacturing semiconductor devices) Next, the manufacturing method of the semiconductor device 100 will be explained. Figure 20 is a flowchart of the manufacturing method of the semiconductor device. First, a lead frame is prepared (S11). Here, a matrix lead frame 200 with 6 rows x 14 columns is prepared as shown in Figure 21. The matrix lead frame 200 has 84 lead frames 201. Figure 22 is an XY plan view showing an enlarged view of the configuration of one lead frame 201.

[0051] The lead frame 201 comprises a plurality of leads 21, a plurality of suspension leads 22, and a die pad 23. The suspension leads 22 support the die pad 23. A plurality of leads 21 are arranged between two suspension leads 22.

[0052] The matrix lead frame 200 is manufactured by press working using a press die. The lead 21, suspension lead 22, and die pad 23 are formed by the press working. Here, since the thin metal sheet is punched out from below by the press die, a burr surface 244 is formed on the lower surface 246 of the lead 21 as shown in Figure 16. Also, the burr 242 formed on the upper surface 241 is flattened by hammering the upper surface 241. As described above, the lead 21 has a plating film 225. The plating process for forming the plating film 225 may be performed before or after the press working. Furthermore, the lead frame is not limited to a press-worked product manufactured by press working, but may also be an etched product manufactured by etching.

[0053] Next, the semiconductor chip 10 is mounted on the die pad 23 (S12). For example, the semiconductor chip 10 is fixed to the die pad 23 using an adhesive or film. As described above, the semiconductor chip 10 has multiple electrode pads 12.

[0054] Wire bonding is performed to electrically connect the lead 21 and the electrode pad 12 (S13). Here, the wire bonding apparatus sequentially bonds multiple leads and multiple electrode pads 12 with wire. As shown in Figures 6 to 10, the wire bonding apparatus repeats the ball formation process A, ball bonding process B, looping process C, stitch bonding process D, and tail cutting process E for each wire 40. This electrically connects the lead 21 and the electrode pad 12. In the wire bonding process, the wire bonding apparatus heats the lead 21 and applies load and ultrasonic vibration to the lead 21.

[0055] Furthermore, in the wire bonding process, the wide second portion 222 allows for stable support of the lead 21. Therefore, the lead 21 can be stably supported without needing to fix it with lead fixing tape. Since lead fixing tape eliminates the need for the lead 21, productivity can be further improved.

[0056] Then, the multiple leads 21, semiconductor chip 10, and wire 40 are sealed in a resin encapsulant 50. Alternatively, a lead frame 201 may be cut from the matrix lead frame. Furthermore, the leads 21 may be bent or otherwise processed. In this way, the semiconductor device 100 can be manufactured with high productivity.

[0057] (Embodiment 2) The configuration of the semiconductor device according to Embodiment 2 will be explained, mainly using Figure 23, with reference to the differences from the semiconductor device 100 according to Embodiment 1. Figure 23 is an XY plan view showing an enlarged view of the joint between the lead 21 and the wire 40 and its surroundings. In Embodiment 2, the positions of the second portion 222 are offset between two adjacent leads 21. Here, the second portion 222 is arranged in a staggered pattern. The configuration other than the second portion 222 is the same as in Embodiment 1, so its explanation and illustration will be omitted as appropriate.

[0058] For example, in Figure 23, the lead 21 to the right of the suspension lead 22 is designated as the first lead 21a. Furthermore, the lead 21 to the right of the first lead 21a is designated as the second lead 21b. The first lead 21a and the second lead 21b are two adjacent leads 21. Multiple leads 21 have a first lead 21a and a second lead 21b located next to the first lead 21a.

[0059] As described above, the plating film formation region 220 of the first lead 21a has a first portion 221, a second portion 222, and a third portion 223. The plating film formation region 220 of the second lead 21b also has a first portion 221, a second portion 222, and a third portion 223. In an XY planar view, the second portion 222 of the first lead 21a is located further from the semiconductor chip 10 than the second portion 222 of the second lead 21b.

[0060] In Figure 23, in the first lead 21a, the first portion 221 is larger than the second portion 222 and the third portion 223. On the other hand, in the second lead 21b, the third portion 223 is larger than the first portion 221 and the second portion 222. The first portion 221 of the first lead 21a is larger than the first portion 221 of the second lead 21b. The third portion 223 of the first lead 21a is smaller than the third portion 223 of the second lead 21b. The second portion 222 of the first lead 21a is approximately the same size as the second portion 222 of the second lead 21b.

[0061] Therefore, the second portion 222 of the first lead 21a is located on the -Y side than the second portion 222 of the second lead 21b. In other words, the second portion 222 of the first lead 21a is further away from the semiconductor chip 10 than the second portion 222 of the second lead 21b. The protrusion 226 of the first lead 21a is located on the -Y side than the protrusion 226 of the second lead 21b.

[0062] The lead 21 to the right of the second lead 21b is designated as the third lead 21c. The second portion 222 of the third lead 21c is further away from the semiconductor chip 10 than the second portion 222 of the second lead 21b. In other words, the protrusion 226 of the third lead 21c is positioned on the -Y side than the protrusion 226 of the second lead 21b. In this way, the Y-direction position of the second portion 222 is alternately shifted for multiple leads 21 aligned in the X direction. That is, the position of the second portion 222 is shifted between odd-numbered leads 21 and even-numbered leads 21 in the order from the suspension lead 22. The second portions 222 provided on each of the multiple leads 21 are arranged in a staggered pattern in the direction of the arrangement of the multiple leads. This makes it possible to narrow the pitch between leads 21, thus making the leads 21 finer pitched.

[0063] The second portion 222 has a projection 226 that protrudes in the lead width direction. Therefore, similar to the first embodiment, eccentricity of the ball portion 40a can be suppressed, and a decrease in the adhesion of the resin sealant 50 can be suppressed. Furthermore, it becomes possible to narrow the pitch between the leads 21.

[0064] (modified version) A modified example of Embodiment 1 described above will be explained with reference to Figures 24 and 25. Figure 24 is an XY plan view schematically showing the joint portion of the lead 21 and the wire 40 and its surroundings. Figure 25 is a schematic cross-sectional view schematically showing the joint portion of the lead 21 and the wire 40 and its surroundings. Figure 25 schematically shows the cross-sectional configuration along the lead direction.

[0065] In this modified example, a V-groove 227 is formed in the plating film formation region 220 of the lead 21. The configuration other than the V-groove 227 is the same as in Embodiment 1, so the illustrations and descriptions are omitted as appropriate. The V-groove 227 is formed along the lead width direction. As shown in Figure 25, the V-groove 227 is a recess with a V-shaped cross-section. Of course, grooves of shapes other than V-shape may be provided in the lead 21.

[0066] The V-grooves 227 are formed in the first portion 221 and the third portion 223, respectively. In other words, two V-grooves 227 are formed in one lead 21. The second portion 222 and the stitch portion 40b are positioned between the two V-grooves 227 in the lead direction. Of course, the number and position of the V-grooves 227 are not limited to the configuration shown in Figures 24 and 25. The anchoring effect of the V-grooves 227 can improve the adhesion of the resin encapsulant 50. Therefore, peeling of the resin encapsulant 50 can be suppressed.

[0067] The configuration of this modified example is also applicable to the configuration of Embodiment 2 described above. Figure 26 shows the configuration of a semiconductor device according to a modified example of Embodiment 2. In Figure 26, similar to Embodiment 2, the second portions 222 are arranged in a staggered pattern. Furthermore, V-grooves 227 are provided on both sides of the second portions 222. The anchoring effect of the V-grooves 227 improves the adhesion of the resin encapsulant 50. Therefore, peeling of the resin encapsulant 50 can be further suppressed.

[0068] Although the present invention has been specifically described above based on embodiments, it goes without saying that the present invention is not limited to the above embodiments and can be modified in various ways without departing from its essence.

[0069] For example, in the above embodiments 1 and 2 and their modifications, a QFP-type semiconductor device was described as the configuration of the semiconductor device 100, but it is also applicable to SOP (Small Outline Package) type semiconductor devices. [Explanation of Symbols]

[0070] 100 Semiconductor Equipment 10 Semiconductor Chips 11 Bonding surface 12 electrode pads 21 Reeds 22 Suspension Leads 23 Die Pad 40 wires 50 Resin sealing body 200 Matrix Leadframes 201 Lead Frame 211 Inner Lead 212 Outer Lead 220 Plating film formation area 221 Part 1 222 Part 2 223 Part 3 225 Plating film 226 Protrusion 227 V groove 229 Main body 241 Top surface 242 Bali 244 Droopy face 245 Flat surface 246 Bottom surface 247 Side view 301 Ultrasonic Horn 302 Capillaries 303 Discharge Torch 402 Adhesion part

Claims

1. Die pad and, Multiple suspension leads supporting the die pad, Multiple leads positioned between the aforementioned multiple suspension leads, The plating film formed in the plating film formation region of each of the plurality of leads, A semiconductor chip mounted on the die pad and having multiple electrode pads, It has a ball portion and a stitch portion, and a plurality of wires that electrically connect the plurality of leads and the plurality of electrode pads, The device comprises the plurality of leads, the semiconductor chip, and a resin encapsulant that seals the wires, The aforementioned plating film formation region, in plan view, Part 1 and, A second portion is located further from the semiconductor chip than the first portion and is wider than the first portion, Equipped with, The stitch portion is joined to the second portion via the plating film, wherein the semiconductor device is a semiconductor device.

2. The plurality of leads include a first lead and a second lead located next to the first lead. The semiconductor device according to claim 1, wherein, in a plan view, the second portion of the first lead is located further from the semiconductor chip than the second portion of the second lead.

3. The semiconductor device according to claim 2, wherein the second portion provided on each of the plurality of leads is arranged in a staggered pattern in the direction of arrangement of the plurality of leads.

4. The semiconductor device according to claim 1, wherein grooves extending in the lead width direction are formed on both sides of the second portion in the lead direction from which the lead extends.

5. Each of the aforementioned multiple leads, in cross-sectional view, The upper surface on which the plating film is formed, The lower surface opposite to the upper surface, A side surface located between the upper surface and the lower surface, A semiconductor device according to claim 1, having a sagging surface connecting the lower surface and the side surface.

6. The semiconductor device according to claim 1, wherein the plating film formation region comprises a third portion that is located further from the semiconductor chip than the second portion and is narrower than the second portion.

7. The semiconductor device according to claim 1, wherein the width of the second portion is 0.15 mm to 0.17 mm.

8. The steps include preparing a lead frame having a die pad, a plurality of suspension leads supporting the die pad, and a plurality of leads arranged between the plurality of suspension leads, The steps include mounting a semiconductor chip having multiple electrode pads onto the die pad, The steps include sequentially wire bonding the plurality of leads and the plurality of electrode pads, The method includes the step of sealing the semiconductor chip and the die pad with a resin encapsulant. Each of the aforementioned plurality of leads has a plating film forming region on which a plating film is formed, The aforementioned plating film formation region is Part 1 and, It comprises a second portion which is located further from the semiconductor chip than the first portion and is wider than the first portion, In the wire bonding step, The ball portion at the tip of the wire is attached to the electrode pad. The stitch portion of the wire is joined to the second portion via the aforementioned plating film. A method for manufacturing a semiconductor device.

9. The plurality of leads include a first lead and a second lead located next to the first lead. The method for manufacturing a semiconductor device according to claim 8, wherein, in a plan view, the second portion of the first lead is located further from the semiconductor chip than the second portion of the second lead.

10. The method for manufacturing a semiconductor device according to claim 9, wherein the second portion provided on each of the plurality of leads is arranged in a staggered manner in the direction of arrangement of the plurality of leads.

11. The method for manufacturing a semiconductor device according to claim 8, wherein grooves extending in the lead width direction are formed on both sides of the second portion in the lead direction from which the lead extends.

12. In the step of preparing the lead frame, The method for manufacturing a semiconductor device according to claim 8, wherein the lead, the suspension lead, and the die pad are formed by press working.

13. In the wire bonding step, The method for manufacturing a semiconductor device according to claim 8, wherein the ball portion is joined to the electrode pad by generating ultrasonic vibrations while the wire is pressed against the electrode pad.

14. In the wire bonding step, The method for manufacturing a semiconductor device according to claim 13, wherein the stitch portion is joined to the second portion of the lead while the lead is not fixed with lead fixing tape.

15. The method for manufacturing a semiconductor device according to claim 8, wherein the plating film formation region comprises a third portion that is located further from the semiconductor chip than the second portion and is narrower than the second portion.

16. The method for manufacturing a semiconductor device according to claim 8, wherein the width of the second portion is 0.15 mm to 0.17 mm.

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