Indication device
The use of a multi-gradation photomask in the manufacturing process for semiconductor devices addresses the cost and efficiency issues of large-scale display devices by forming transistors and capacitive elements efficiently, reducing photomask costs and power consumption while maintaining high aperture ratios.
JP2026086533APending Publication Date: 2026-05-26SEMICON ENERGY LAB CO LTD
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- SEMICON ENERGY LAB CO LTD
- Filing Date
- 2026-02-03
- Publication Date
- 2026-05-26
AI Technical Summary
Technical Problem
The increasing size of glass substrates in display devices leads to higher costs for photomasks and reduces the aperture ratio of pixels, degrading display quality and increasing power consumption due to the need for larger capacitive elements.
Method used
A manufacturing method for semiconductor devices that involves forming a transistor and capacitive element simultaneously using a multi-gradation photomask, which reduces the number of photomasks required and increases the charge capacitance while maintaining a high aperture ratio.
Benefits of technology
This method reduces costs and power consumption by allowing for larger capacitive elements with high aperture ratios, enhancing display quality and efficiency in large-scale display devices.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure 2026086533000001_ABST
Abstract
A semiconductor having a high aperture ratio and a capacitive element capable of increasing charge capacitance. The apparatus provides a manufacturing method that can reduce costs, or reduces power consumption. This provides a manufacturing method that can reduce costs in semiconductor devices where reduction is possible. . [Solution] A method for simultaneously fabricating a transistor and a capacitive element, which is a multi-gradation photo A process using a mask produces a metal oxide film containing the channel region within the transistor. And a channel protection film and one electrode of the capacitive element are formed.
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