Indication device

Abstract

To provide a liquid crystal display device with a high aperture ratio. To provide a liquid crystal display device with low power consumption. . [Solution] A display device having a transistor and a capacitive element. The transistor is a first An insulating layer, a first semiconductor layer in contact with the first insulating layer, and a second insulating layer in contact with the first semiconductor layer The layer is electrically connected to the first semiconductor layer through an opening in the second insulating layer. The capacitive element has a first conductive layer, and the first semiconductor layer has a channel region. A second conductive layer in contact with the insulating layer, a second insulating layer in contact with the second conductive layer, and a second insulating layer It has a first conductive layer in contact with the semiconductor layer, and the second conductive layer has the same composition as the first semiconductor layer. The first conductive layer and the second conductive layer have the function of transmitting visible light.

Description

Technical Field

[0001] One aspect of the present invention relates to a display device, a method for manufacturing the same, and an electronic device.

[0002] Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the present invention and include, for example, semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), their driving methods, or their manufacturing methods.

Background Art

[0003] Many transistors used in flat panel displays such as liquid crystal display devices and light-emitting display devices are formed of silicon semiconductors such as amorphous silicon, single crystal silicon, or polycrystalline silicon formed on a glass substrate. Further, transistors using such silicon semiconductors are also used in integrated circuits (ICs) and the like. In recent years, technology using metal oxides exhibiting semiconductor characteristics in place of silicon semiconductors for transistors has been attracting attention. In this specification, metal oxides exhibiting semiconductor characteristics are referred to as oxide semiconductors. For example, Patent Document 1 and Patent Document 2 disclose a technique for manufacturing a transistor using zinc oxide or an In-Ga-Zn-based oxide as an oxide semiconductor and using the transistor as a switching element of a pixel of a display device or the like.

[0004]

[0005]

Prior Art Documents

Patent Documents

[0005] [Patent Document 1] Japanese Patent Publication No. 2007-123861 [Patent Document 2] Japanese Patent Publication No. 2007-96055 [Overview of the Initiative] [Problems that the invention aims to solve]

[0006] One aspect of the present invention aims to provide a liquid crystal display device with a high aperture ratio and a method for manufacturing the same. One aspect of the present invention is a liquid crystal display device with a simplified manufacturing process and One objective of the present invention is to provide a method for manufacturing a product with low power consumption. Alternatively, one aspect of the present invention is to provide a method for manufacturing a product with low power consumption. One objective of this invention is to provide a liquid crystal display device and a method for manufacturing the same. One of the objectives of this embodiment is to provide a high-resolution liquid crystal display device and a method for manufacturing the same. Alternatively, one aspect of the present invention provides a highly reliable liquid crystal display device and a method for manufacturing the same. One of the objectives is to provide a novel liquid crystal display device and a method for manufacturing the same. Alternatively, one aspect of the present invention relates to a novel liquid crystal display device and a method for manufacturing the same. One of the objectives is to provide it.

[0007] Furthermore, the description of these problems does not preclude the existence of other problems. One aspect of the present invention is It is not necessarily required to resolve all of these issues. Specifications, drawings, invoices. It is possible to extract other issues from the descriptions in the sections. [Means for solving the problem]

[0008] One aspect of the present invention is a display device having a transistor and a capacitive element, wherein the The sta consists of a first insulating layer, a first semiconductor layer in contact with the first insulating layer, and a first semiconductor layer in contact with the first semiconductor layer. A second insulating layer is formed, and through openings provided in the second insulating layer, the first semiconductor layer and electrical A first conductive layer is connected to a first semiconductor layer, and the first semiconductor layer has a channel region and capacitance The element comprises a second conductive layer in contact with a first insulating layer, and a second insulating layer in contact with the second conductive layer. It has a first conductive layer in contact with a second insulating layer, and the second conductive layer is similar to the first semiconductor layer. The composition is such that the first conductive layer and the second conductive layer have a surface that transmits visible light. It is a display device.

[0009] Furthermore, in the above embodiment, the first semiconductor layer, the first conductive layer, and the second conductive layer are metal It may contain oxides.

[0010] Furthermore, in the above embodiment, the metal oxide in the first semiconductor layer is the metal oxide in the first conductive layer The metal oxide may contain one or more different metal elements.

[0011] Furthermore, in the above embodiment, the first conductive layer may have an In-Zn oxide.

[0012] Furthermore, in the above embodiment, the second insulating layer may have silicon oxidiznitride.

[0013] Furthermore, in the above embodiment, there is a third insulating layer in contact with the second insulating layer and the first conductive layer. The third insulating layer may have more oxygen than satisfies the stoichiometric composition.

[0014] Furthermore, in the above embodiment, the device has a liquid crystal element, and the liquid crystal element has a liquid crystal layer and a pixel electrode. The pixel electrodes may be electrically connected to the first conductive layer.

[0015] Furthermore, in the above embodiment, the resistivity of the liquid crystal element is 1.0 × 10⁻⁶ 14 Ω·cm or larger That's good too.

[0016] Furthermore, in the above embodiment, the frame frequency of the display device is 0.1 Hz or more and less than 60 Hz. Yes, the display device writes data to the capacitive element and then puts the transistor into a non-conductive state. This may provide a function to retain data.

[0017] Furthermore, in the above embodiment, the frame frequency of the display device is 0.1 Hz or more and less than 20 Hz. It's okay to have it.

[0018] Furthermore, in the above embodiment, there is a scanning line, and the scanning line is formed using a metallic material, and the scanning line It may have a portion that overlaps with the channel region of the transistor.

[0019] Furthermore, an electronic device having a display device and an operation key according to one aspect of the present invention is also according to one aspect of the present invention. That is the case.

[0020] Furthermore, one aspect of the present invention is a method for manufacturing a display device, wherein the manufacturing method comprises a first semiconductor layer The process of forming a second semiconductor layer and the first semiconductor layer and the second semiconductor layer in contact with each other The process involves forming a first insulating layer and applying a first semiconductor layer to the first insulating layer. The process involves forming an opening, and overlapping with the second semiconductor layer, and through the first opening, the first semiconductor A step of forming a third semiconductor layer so as to be electrically connected to the layer, and a first insulating layer and A step of forming a second insulating layer so as to be in contact with a third semiconductor layer, and a step of forming a third insulating layer on the second insulating layer. A step of forming a second opening that reaches the semiconductor layer, and a step of forming a third semiconductor through the second opening The process includes the step of forming pixel electrodes so as to be electrically connected to a layer, and forming a first insulating layer. In the process of making the semiconductor, the first semiconductor layer and the second semiconductor layer are made to have low resistance. In the process of forming the second insulating layer, the third semiconductor layer is made less resistive, and the second insulating layer After the layer is formed, the channel region of the first semiconductor layer, which has been made low-resistance, becomes high-resistance in the display device. This is the method for making it.

[0021] Furthermore, a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer are provided so as to have a metal oxide. It may form layers.

[0022] Alternatively, a third semiconductor layer may be formed having an In-Zn oxide.

[0023] Furthermore, using a film-forming gas containing silane, the first insulating layer and the second insulating layer are formed by CVD. Layers may be formed.

[0024] Furthermore, the film-forming gas may also contain nitrogen oxides.

[0025] Furthermore, heat treatment may be performed after the formation of the second insulating layer.

[0026] Alternatively, a liquid crystal layer may be formed after the pixel electrodes have been formed. [Effects of the Invention]

[0027] According to one aspect of the present invention, a liquid crystal display device with a high aperture ratio and a method for manufacturing the same are provided. Yes, it is possible. Or, according to one aspect of the present invention, a liquid crystal display device with a simplified manufacturing process and the same. A method for manufacturing can be provided. Alternatively, according to one aspect of the present invention, a liquid crystal with low power consumption can be produced. A display device and a method for manufacturing the same can be provided. Alternatively, according to one aspect of the present invention, This invention can provide a high-resolution liquid crystal display device and a method for manufacturing the same. Depending on the embodiment, a highly reliable liquid crystal display device and a method for manufacturing the same can be provided. Alternatively, according to one aspect of the present invention, a novel liquid crystal display device and a method for manufacturing the same can be provided. can.

[0028] Furthermore, the description of these effects does not preclude the existence of other effects. One aspect of the present invention is It is not necessarily required to have all of these effects. It is possible to extract effects other than those listed above. [Brief explanation of the drawing]

[0029] [Figure 1] A cross-sectional view showing an example of a display device. [Figure 2] A cross-sectional view showing an example of a display device. [Figure 3] A top view and a cross-sectional view showing an example of a display device. [Figure 4] A cross-sectional view showing an example of a display device. [Figure 5] A perspective view showing an example of a display device. [Figure 6] A cross-sectional view showing an example of a display device. [Figure 7] A cross-sectional view showing an example of a display device. [Figure 8] A cross-sectional view showing an example of a method for manufacturing a display device. [Figure 9] A cross-sectional view showing an example of a method for manufacturing a display device. [Figure 10] A diagram showing examples of pixel arrangement and configuration. [Figure 11] A perspective view showing an example of a display device. [Figure 12] A cross-sectional view showing an example of a display device. [Figure 13] A diagram showing an example of pixel configuration and an example of operating mode. [Figure 14] Block diagram and timing chart of the touch sensor. [Figure 15] Block diagram and timing chart of the display device. [Figure 16] A diagram illustrating the operation of a display device and a touch sensor. [Figure 17] A diagram illustrating the operation of a display device and a touch sensor. [Figure 18] A diagram showing an example of an electronic device. [Modes for carrying out the invention]

[0030] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may be changed in various ways. Those skilled in the art will readily understand that further modifications are possible. Therefore, the present invention can be implemented in the following forms. It is not to be interpreted solely in terms of the content of the description of the state.

[0031] In the configuration of the invention described below, the same part or part having a similar function is included. The same reference numerals are used consistently across different drawings, and explanations of their repetition are omitted. When referring to the function of [this], the hatch pattern is the same, and sometimes no specific symbol is assigned.

[0032] Furthermore, the position, size, and extent of each component shown in the drawings are, for the sake of ease of understanding, the actual The location, size, range, etc., may not be described. Therefore, the disclosed invention is not necessarily This is not limited to the location, size, scope, etc. disclosed in the drawings.

[0033] Note that the words "membrane" and "layer" may differ in some cases or depending on the situation. Therefore, they can be interchanged. For example, the term "conductive layer" can be replaced with "conductive film." It is possible to change the term to "insulating film". Alternatively, for example, the term "insulating film" can be changed to It is possible to change the term to "insulating layer".

[0034] In this specification and elsewhere, "metal oxide" refers to a broad term for metals. It is an oxide. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). Oxide semiconductors (also called OS), etc. It is classified as follows. For example, when a metal oxide is used in the semiconductor layer of a transistor, the metal acid Oxide semiconductors are sometimes referred to as oxide semiconductors. In other words, when it is written as OS FET, Therefore, it can be rephrased as a transistor having a metal oxide or oxide semiconductor.

[0035] Furthermore, in this specification, metal oxides containing nitrogen are also referred to as metal oxides (metal oxi They are sometimes collectively referred to as (de) metal oxides (met It may also be called al oxynitride.

[0036] (Embodiment 1) In this embodiment, a display device according to one aspect of the present invention will be described using Figures 1 to 12. .

[0037] <1. Example of display device configuration 1> First, an embodiment of the present invention's display device will be described with reference to Figures 1 to 4.

[0038] A display device according to one aspect of the present invention comprises a display element, a transistor, and a capacitive element. For example, a liquid crystal element can be used as the element. Hereafter, the display element will be described as a liquid crystal element. However, the display elements to which one aspect of the present invention can be applied are not limited to liquid crystal elements. For example, display elements This may be a light-emitting element that has the function of self-illuminating. For example, an organic EL element may be used as the light-emitting element. Child, inorganic EL element, LED (Light Emitting Diode), QLED ( Quantum-dot light-emitting diode), semiconductor laser - and so on can be used. Note that the light-emitting element can be a backlight or a sidelight. An element combining a light source such as a transmissive liquid crystal element may also be used. Furthermore, both liquid crystal elements and light-emitting elements may be used.

[0039] A liquid crystal element has a pixel electrode, a liquid crystal layer, and a common electrode. Transistors and capacitive elements It is electrically connected to the pixel electrode. The pixel electrode, common electrode, and capacitive element receive visible light. It has a transparency function. The visible light passes through the liquid crystal element and is emitted to the outside of the display device. ru.

[0040] A display device according to one aspect of the present invention has a capacitive element with a region that transmits visible light. Capacitive elements can be placed in the display area. Therefore, the aperture ratio of the pixels can be increased, and the display device can be improved. This can reduce power consumption and enable higher resolution displays.

[0041] The transistor in the display device according to one aspect of the present invention has a channel-protected structure. This is preferable. With this structure, the channel protection layer of the transistor and the dielectric of the capacitive element are The layers can be formed in the same process. This improves the reliability of the transistor while This allows for the simplification of the manufacturing process of the display device according to one embodiment of the present invention.

[0042] A display device according to one aspect of the present invention further comprises scan lines and signal lines. Each line is electrically connected to a transistor. The scan lines and signal lines are, respectively , has a metal layer. By using a metal layer for scan lines and signal lines, scan lines and signal lines The resistance can be reduced.

[0043] Furthermore, it is preferable that the scan lines have a portion that overlaps with the channel region of the transistor. Depending on the material used in the channel region of the transistor, when light is irradiated, the transistor The characteristics may vary. The scan line has a portion that overlaps with the channel region of the transistor. This suppresses the illumination of the channel area by external light or backlight. This allows for improved transistor reliability.

[0044] The display device 10A shown in Figure 1(A) consists of a substrate 11, a substrate 12, a transistor 14, and a liquid crystal element. 15. Capacitive elements 16, etc. The backlight unit is located on the substrate 12 side of the display device 10A. Number 13 is positioned.

[0045] The liquid crystal element 15 has a pixel electrode 21, a liquid crystal layer 22, and a common electrode 23. Pixel electrode 2 1 is electrically connected to the transistor 14 through an opening provided in the insulating layer 26. The insulating layer 26 is formed using the same process and materials as the pixel electrode 21. A conductive layer 25 is provided. The conductive layer 25 is electrically connected to the common electrode 23 via the connector 29. They are connected.

[0046] Light 45a from the backlight unit 13 passes through the substrate 12, insulating layer 26, pixel electrode 21, and liquid The crystal layer 22, the common electrode 23, and the substrate 11 are ejected to the outside of the display device 10A. The materials used for these layers through which light 45a is transmitted are materials that transmit visible light.

[0047] Light 45b from the backlight unit 13 is directed to the substrate 12, transistor 14, and pixel electrode 2. 1. The liquid crystal layer 22, the common electrode 23, and the substrate 11 are ejected to the outside of the display device 10A. In this embodiment, the transistor 14 electrically connected to the liquid crystal element 15 is The configuration has a region that transmits visible light. Therefore, transistor 14 is provided. The area that is not visible can also be used as a display area. This increases the aperture ratio of the pixels. This is possible. The higher the aperture ratio, the higher the light extraction efficiency, so the display device This can reduce power consumption and enable the creation of high-definition display devices.

[0048] Light 45c from the backlight unit 13 is directed to the substrate 12, the capacitive element 16, and the pixel electrode 21. The liquid crystal layer 22, the common electrode 23, and the substrate 11 are ejected to the outside of the display device 10A. In this embodiment, the capacitive element 16 has a configuration that transmits visible light. Therefore, the area where the capacitive element 16 is provided can also be used as a display area. This allows for an increase in the aperture ratio of the pixels. The higher the aperture ratio, the more effective the light extraction. Because the efficiency can be increased, the power consumption of the display device can be reduced. This enables the creation of highly detailed display devices.

[0049] The display device 10B shown in Figure 1(B) has a backlight unit 13 located on the circuit board 11 side. It differs from the display device 10A in that it is configured in a different way. The other configurations are the same as those of the display device 10A. Therefore, the explanation will be omitted.

[0050] In the display device 10A, light 45b first passes through the transistor 14, which transmits visible light. The light enters the region. The light 45b that has passed through the region then enters the liquid crystal element 15. In the display device 10B, light 45b first enters the liquid crystal element 15. The light 45b that passes through the child 15 is incident on the visible light-transmitting region of the transistor 14. In this way, the light from the backlight unit 13 is transmitted to the transistor 14 and the liquid crystal element. It is acceptable to first incident on either of the 15 points.

[0051] In the display device 10A, light 45c first enters the capacitive element 16. Then, in that region The transmitted light 45c enters the liquid crystal element 15. Meanwhile, in the display device 10B, the light 45c First, the light enters the liquid crystal element 15. Then, the light 45c that has passed through the liquid crystal element 15 enters the capacitive element The light is incident on the visible light-transmitting region of child 16. In this way, the backlight unit 1 The light from 3 may enter either the capacitive element 16 or the liquid crystal element 15 first.

[0052] Furthermore, a display device according to one aspect of the present invention includes a liquid crystal element, a transistor, a capacitive element, and a touch It has a sensor. The liquid crystal element has a pixel electrode, a liquid crystal layer, and a common electrode. Transis The touch sensor is electrically connected to the pixel electrodes and capacitive elements. The touch sensor is a liquid crystal element and It is located on the display side of the transistor. Pixel electrodes, common electrodes, and capacitive elements are visible. It has the function of transmitting light. Visible light passes through the capacitive element and liquid crystal element, and the display device It is ejected to the outside.

[0053] A display device according to one aspect of the present invention is a display device (input / output device or touch sensor) equipped with a touch sensor. It can be applied to (also called a check panel).

[0054] The display device 15A shown in Figure 2(A) has a touch sensor unit on the substrate 11 side of the display device 10A. This configuration includes the placement of the 31-unit.

[0055] The display device 15B shown in Figure 2(B) has a common electrode 23 between the substrate 11 of the display device 10A. The configuration includes a touch sensor unit 31 and an insulating layer 32. Furthermore, the display device The component 15B has a conductive layer 27 and a conductive layer 28.

[0056] A conductive layer formed on the insulating layer 26 using the same process and materials as the pixel electrode 21. 27 is provided. In contact with the insulating layer 32, it is made using the same process and the same material as the common electrode 23. A conductive layer 28 formed using a material is provided. The conductive layer 28 is a touch sensor unit. It is electrically connected to the 31. The conductive layer 28 is electrically connected to the conductive layer 27 via the connector 29. They are electrically connected. This allows one or more FPCs connected to the substrate 12 to Therefore, both the signal that drives the liquid crystal element 15 and the signal that drives the touch sensor unit 31 It can supply the FPC etc. to the board 11 side, and the display device configuration This can be further simplified. Compared to the case where FPC is connected to both board 11 and board 12, It is easy to integrate into electronic devices and can reduce the number of components.

[0057] In the display device 15B, a touch sensor unit 31 can be provided between a pair of circuit boards. Therefore, the number of circuit boards can be reduced, enabling lighter and thinner display devices.

[0058] The display device 15C shown in Figure 2(C) has a layer between the substrate 12 and the insulating layer 26 of the display device 10B. The configuration includes a touch sensor unit 31 and an insulating layer 32. Furthermore, the display device 15C has a conductive layer 33.

[0059] In contact with the insulating layer 32, the same process as one or more conductive layers of the transistor 14 is performed. And a conductive layer 33 made of the same material is provided. The conductive layer 33 is touch sensor It is electrically connected to the subunit 31. In the display device 15C, it is connected to the board 11 side. One or more FPCs drive the liquid crystal elements 15 and the touch sensor unit. It can supply both signals that drive the T31. Therefore, it can be incorporated into electronic devices. Furthermore, it can reduce the number of parts.

[0060] In the display device 15C, a touch sensor unit 31 can be provided between a pair of circuit boards. Therefore, the number of circuit boards can be reduced, enabling lighter and thinner display devices.

[0061] [About pixels] Next, the pixels of a display device according to one embodiment of the present invention will be explained with reference to Figure 3.

[0062] Figure 3(A1) shows a schematic top view of pixel 900. Pixel 900 shown in Figure 3(A1) is 4 It has two subpixels. In Figure 3(A1), at pixel 900, there are two subpixels vertically and horizontally. An example of two being arranged in a row is shown. Each sub-pixel contains a transmissive liquid crystal element 40 (Figure 3(A1)). (A2) is not shown, but a transistor 206 and a capacitive element 34 are provided. In Figure 3(A1), there are two wires each for wiring 902 and wiring 904 at pixel 900. Each sub-pixel shown in Figure 3(A1) has a display area 918 (display area) of the liquid crystal element. Display area 918R, display area 918G, display area 918B, and display area 918W) They are doing it.

[0063] Furthermore, the pixel 900 has wiring 902 and wiring 904, etc. Wiring 902 is, for example, running It functions as a signal line. Wiring 904 functions as, for example, a signal line. Wiring 9 Wiring 02 and wiring 904 have a portion that intersects with each other.

[0064] Transistor 206 functions as a selector transistor. The gate electrode is electrically connected to wiring 902. Source electrode of transistor 206. Alternatively, one of the drain electrodes is electrically connected to wiring 904, and the other is connected to the liquid crystal element. 40 is electrically connected to the capacitive element 34.

[0065] Here, wiring 902 and wiring 904 have light-shielding properties. Also, the other layers, i.e., The transistor 206, the wiring connected to the transistor 206, the capacitive element 34, and other components that make up the transistor 206, A translucent film is preferably used for the layer. Figure 3(A2) is shown in Figure 3(A1). Pixel 900 consists of a transparent region 900t that transmits visible light and a light-blocking region 900s that blocks visible light. This is an example of clearly showing the parts separated into , and in this way, a transistor is made using a light-transmitting film. By manufacturing this material, the areas other than those where wiring is installed can be made into a permeable region of 900t. The transparent region of the crystal element is superimposed on the transistor, the wiring connected to the transistor, the capacitive element, etc. This allows for an increase in the aperture ratio of the pixels.

[0066] Furthermore, the higher the ratio of the area of ​​the transmitted region to the area of ​​the pixel, the greater the amount of transmitted light. This is possible. For example, the ratio of the area of ​​the transparent region to the area of ​​the pixel can be between 1% and 95%. Preferably, the percentage is 10% to 90%, and more preferably 20% to 80%. This is possible. It is especially preferable to have 40% or more, or 50% or more, and 60% to 80%. The following is more preferable:

[0067] Furthermore, Figure 3(B) shows a cross-sectional view corresponding to the cross-section of the dashed line AB shown in Figure 3(A2), and This is shown in Figure 4. Note that in Figures 3(B) and 4, liquids not shown in the top view are also shown. Cross-sections of the crystal element 40, colored layer 131, light-shielding layer 132, drive circuit section 64, etc. are also shown in the diagram. It is used as either a scan line drive circuit or a signal line drive circuit. This is possible. Furthermore, the drive circuit section 64 includes a transistor 201.

[0068] It is preferable that transistor 206 be a channel-protected transistor. , in contact with the semiconductor layer 231 having a channel region, it functions as a channel protection layer. An insulating layer 261 is provided. Furthermore, an opening is provided in the insulating layer 261. The opening has the function of either the source or the drain of transistor 206. The conductive layer 222 and the semiconductor layer 231 are electrically connected. In addition, the insulating layer 261 An opening is provided, and through this opening, the source or drain of transistor 206 is connected to the other The conductive layer 232, which functions as a material, and the semiconductor layer 231 are electrically connected. Furthermore, in the semiconductor layer 231, the connection portion with the conductive layer 222 and the connection portion with the conductive layer 232 It is preferable to reduce the resistance of this part.

[0069] The capacitive element 34 has a conductive layer 262, an insulating layer 261, and a conductive layer 232. 2 functions as the first electrode of the capacitive element 34. The insulating layer 261 is connected to the capacitive element 34 It functions as a dielectric layer. The conductive layer 262 functions as the second electrode of the capacitive element 34. It has the ability. In other words, the conductive layer 232 is on the source or drain of the transistor 206. It also functions as the second electrode of the capacitive element 34. Furthermore, the insulating layer 261 is It functions as a channel protection layer for the transistor 206 and as a dielectric for the capacitive element 34. . The first electrode of the capacitive element 34 can be, for example, the lower electrode. The second electrode can be, for example, an upper electrode.

[0070] The conductive layer 262 can be formed in the same layer as the semiconductor layer 231. In other words, the semiconductor layer A film is formed, and after processing the semiconductor layer by lithography or the like, it is formed on the capacitive element 34. By reducing the resistance of the semiconductor layer, a conductive layer 262 can be formed. In this case, The conductive layer 262 has the same composition as the semiconductor layer 231. The lithography method is as follows: A resist mask is formed on the thin film to be processed by etching or other means, and the resist is then applied. A method for removing the stock mask, and after forming a photosensitive thin film, exposure and development are performed. There are methods for processing the thin film into a desired shape.

[0071] As described above, in the display device according to one aspect of the present invention, by making the transistor a channel-protected type, During the formation of the source and drain of a transistor, etc., the channel region of the semiconductor layer is etched. This can suppress the damage inflicted by the transition. This stabilizes the electrical characteristics of the transistor, enabling the creation of highly reliable transistors.

[0072] Furthermore, in a display device according to one aspect of the present invention, the first electrode of the capacitive element is a semiconductor of the transistor. It can be formed in the same process as the layer. In addition, the dielectric layer of the capacitive element can be formed in the transistor's chain. It can be formed in the same process as the Nel protective layer. Also, the second electrode of the capacitive element is made of Tran. It can be formed in the same process as the source or drain of the zista. Thus, the present invention The manufacturing process of one embodiment of the display device can be simplified, and manufacturing costs can be reduced. Cut.

[0073] As shown in Figures 3(B) and 4, the light from the backlight unit 13 is directed by the dashed arrow. The light is emitted in the direction indicated by the mark. The light from the backlight unit 13 is emitted by transistor 206, Alternatively, it is extracted externally via a capacitive element 34, etc. Therefore, transistor 206, It is preferable that the film and other components constituting the capacitance element 34 also have light-transmitting properties. 206, The larger the area of ​​the light-transmitting region of the capacitive element 34, etc., the backlight unit It can efficiently utilize 13 types of light.

[0074] Furthermore, as shown in Figures 3(B) and 4, the light from the backlight unit 13 is It may be removed to the outside via the color layer 131. By removing it via the colored layer 131, It can be colored to the desired color. The colored layer 131 can be red (R), green (G), or blue (B). You can choose from cyan (C), magenta (M), yellow (Y), etc.

[0075] In Figure 3(B), the light from the backlight unit 13 first passes through transistor 206, and Or it is injected into the capacitive element 34, etc. Then, the transistor 206 or the capacitive element 34, etc. The transmitted light enters the liquid crystal element 40. Then, the light that has passed through the liquid crystal element 40 enters the colored layer It is extracted externally via 131.

[0076] In Figure 4, the light from the backlight unit 13 first enters the colored layer 131. The light that has passed through the colored layer 131 enters the liquid crystal element 40. The light that has passed through is extracted to the outside via transistor 206 or capacitive element 34, etc.

[0077] The transistors, wiring, capacitive elements, etc. shown in Figure 3 can be made from the following materials. These materials are semiconductors that transmit visible light in each of the configuration examples shown in this embodiment. It can also be applied to body layers and conductive layers.

[0078] The semiconductor layer of a transistor can be formed using a translucent semiconductor material. It is possible. Translucent semiconductor materials include metal oxides or oxide semiconductors (Oxid Examples include (e Semiconductor). Oxide semiconductors have at least index It is preferable that it contains um. It is particularly preferable that it contains indium and zinc. In addition to these, aluminum, gallium, yttrium, copper, vanadium, beryllium, Boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, Lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium It may include one or more species selected from Um, etc.

[0079] The conductive layers of transistors and capacitive elements are formed using a light-transmitting conductive material. It is possible. The light-transmitting conductive material is selected from indium, zinc, and tin. It is preferable to include one or more types. Specifically, In oxide, In-Sn oxide Indium nitrile oxide (ITO: also called Indium nitrile oxide), In-Zn oxide, In- W oxide, In-W-Zn oxide, In-Ti oxide, In-Sn-Ti oxide, In- Examples include Sn-Si oxide, Zn oxide, and Ga-Zn oxide.

[0080] Furthermore, impurity elements are added to the conductive layer of transistors and capacitive elements, etc. A resistive oxide semiconductor may be used. This resistive oxide semiconductor is an oxide It can be described as an oxide conductor (OC).

[0081] For example, in oxide conductors, oxygen vacancies are formed in the oxide semiconductor, and hydrogen is added to these oxygen vacancies. This causes a donor level to form near the conduction band. As a result, the oxide semiconductor becomes highly conductive and turns into a conductor.

[0082] Note that oxide semiconductors have a large energy gap (for example, an energy gap of 2 (It is above 0.5 eV) and therefore has light transmission to visible light. Also, as mentioned above, oxidation A conductor is an oxide semiconductor that has a donor level near the conduction band. Therefore, oxide Conductors exhibit little influence from absorption due to donor levels, and their absorption is similar to that of oxide semiconductors for visible light. It has light-transmitting properties.

[0083] Furthermore, oxide conductors contain one or more metal elements in the semiconductor layer of the transistor. It is preferable to have. An oxide semiconductor having the same metal element constitutes a transistor. By using it in two or more layers, the manufacturing equipment (e.g., film deposition equipment, processing equipment, etc.) can be reduced to two or more. Since it can be used in common in the processes described above, manufacturing costs can be reduced.

[0084] By using the pixel configuration of the display device shown in this embodiment, the backlight unit The light emitted can be used efficiently. Therefore, power consumption is suppressed. We can provide an excellent display device.

[0085] <2. Example of Display Device Configuration 2> Next, a display device according to one embodiment of the present invention will be described with reference to Figures 5 to 7. Figure 5 is a table Figure 6 is a perspective view of the display device 100. Figure 5 shows the substrate. The number 61 is shown with a dashed line.

[0086] The display device 100 has a display unit 62 and a drive circuit unit 64. The display device 100 has F PC72 and IC73 are implemented.

[0087] The display unit 62 has multiple pixels 900 and has the function of displaying an image.

[0088] Pixel 900 has multiple subpixels. For example, a subpixel that exhibits red light, a subpixel that exhibits green light, and so on. In the display unit 62, one pixel is composed of a primary pixel and a secondary pixel that exhibits blue light. It can display in full color. The sub-pixels will exhibit the colors red, green, and blue. It is not limited. Pixels may have subpixels that exhibit colors such as white, yellow, magenta, or cyan. You may also use [this term]. Note that in this specification, sub-pixels may sometimes be simply referred to as pixels.

[0089] The display device 100 has one or both of the scanning line drive circuit and the signal line drive circuit. It may be so. Or, it may not have both a scan line drive circuit and a signal line drive circuit. Good. If the display device 100 has a sensor such as a touch sensor, the display device 100 is... It may have a scan line drive circuit. In this embodiment, the drive circuit section 64 is a scan line drive An example with a drive circuit is shown. The scan line drive circuit sends a scan signal to the scan lines of the display unit 62. It has the function of outputting.

[0090] In the display device 100, IC73 is mounted on the substrate 51 using a mounting method such as the COG method. IC73 is used, for example, in signal line drive circuits, scan line drive circuits, and sensor drive circuits. It has one or more of these.

[0091] The FPC72 is electrically connected to the display device 100. Signals and power are supplied to 73 and the drive circuit section 64 from an external source. Also, FPC72 The IC73 can output a signal to the outside via this.

[0092] The FPC72 may have an IC mounted on it. For example, the FPC72 may have a signal line drive circuit. An IC is implemented that has one or more of the following: a path, a scan line drive circuit, and a sensor drive circuit. It's fine if it is done.

[0093] Signals and power are supplied to the display unit 62 and the drive circuit unit 64 from the wiring 65. The signal and power enter wiring 65 from IC73 or from an external source via FPC72. To be empowered.

[0094] Figure 6 is a cross-sectional view including the pixel 900 and the drive circuit section 64. As shown in Figure 6, The display device 100 includes a substrate 51, a transistor 201, a transistor 206, a liquid crystal element 40, Alignment film 133a, alignment film 133b, connecting part 204, adhesive layer 141, colored layer 131, light-shielding layer It includes components 132, an overcoat 121, and a substrate 61, etc.

[0095] The liquid crystal element 40 has a pixel electrode 111, a common electrode 112, and a liquid crystal layer 113. The electric field generated between electrode 111 and common electrode 112 controls the orientation of the liquid crystal layer 113. This is possible. The liquid crystal layer 113 is located between the alignment layer 133a and the alignment layer 133b.

[0096] In Figure 6, the pixel electrode 111 is electrically connected to the conductive layer 232. As described above... Furthermore, the conductive layer 232 is the source electrode or the other drain electrode of the transistor 206, and It functions as the second electrode of the capacitive element 34 and is formed using a material that transmits visible light. Furthermore, the conductive layer 262, which functions as the first electrode of the capacitive element 34, also transmits visible light. It is formed using a material that is suitable for this purpose. As a result, the region where the capacitive element 34 is provided is the display region 91. It can be set to 8. Therefore, the aperture ratio of pixel 900 can be increased, and the table The power consumption of the display device 100 can be reduced.

[0097] Furthermore, in Figure 6, an alignment film is provided so as to be in contact with the liquid crystal layer 113. The alignment film is It has the function of controlling the orientation of the liquid crystal layer 113. In Figure 6, it is in contact with the pixel electrode 111. An alignment film 133a is provided, and an alignment film 133b is provided so as to be in contact with the common electrode 112. Furthermore, a configuration without alignment films 133a and / or 133b is also possible.

[0098] Liquid crystal materials include positive-type liquid crystal materials, where the dielectric anisotropy (Δε) is positive, and negative-type liquid crystal materials, where the dielectric anisotropy (Δε) is negative. There are two liquid crystal materials. In one aspect of the present invention, either material can be used, and the applicable model The optimal liquid crystal material can be used depending on the code and design.

[0099] In one aspect of the present invention, it is preferable to use a negative-type liquid crystal material. In a negative-type liquid crystal, The influence of the flexoelectric effect originating from molecular polarization can be suppressed, and transmittance due to polarity can be reduced. The difference is almost negligible. Therefore, the flicker is not visible to the user of the display device. It can be suppressed. The flexoelectric effect is mainly due to molecular shape and orientational distortion. This is a phenomenon in which polarization occurs. Negative-type liquid crystal materials exhibit orientational distortion due to spreading deformation and bending deformation. It's difficult.

[0100] Furthermore, liquid crystal elements to which various modes have been applied can be used as liquid crystal elements 40. For example, FFS (Fringe Field Switching) mode, VA (Ver (Critical Alignment) mode, TN (Twisted Nematic) mode , IPS (In-Plane-Switching) mode, ASM (Axiall y Symmetric aligned Micro-cell) mode, OCB(O (Practically Compensated Birefringence) mode, F LC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid Crystal) mode, EC B(Electrically Controlled Birefringence) Use a liquid crystal element to which modes such as VA-IPS mode and guest host mode are applied. It is possible.

[0101] Furthermore, the display device 100 may be a normally black type liquid crystal display device, for example, a vertically aligned (VA) liquid crystal display device. A transmissive liquid crystal display device employing a mode may also be used. As for the vertical alignment mode, M VA (Multi-Domain Vertical Alignment) mode, P VA(Patterned Vertical Alignment) mode, ASV( Advanced Super View mode and other features can be used.

[0102] Furthermore, a liquid crystal element is an element that controls the transmission or non-transmission of light through the optical modulation effect of liquid crystals. Yes. The optical modulation effect of liquid crystals is due to the electric field acting on the liquid crystal (horizontal electric field, vertical electric field or It is controlled by an electric field (including an oblique electric field). For example, the optics of a liquid crystal are controlled by a transverse electric field. When controlling the modulation effect, the control method can be called the transverse electric field method. The liquid crystals used include thermotropic liquid crystals, low molecular weight liquid crystals, polymer liquid crystals, and polymer dispersion liquids. Crystal (PDLC: Polymer Dispersed Liquid Crystal) Ferroelectric liquid crystals, antiferroelectric liquid crystals, etc., can be used. These liquid crystal materials are suitable for the conditions. More specifically, the cholesteric phase, smectic phase, cubic phase, chiral nematic phase, etc. It shows the phases, etc.

[0103] Furthermore, when employing a transverse electric field method, a liquid crystal exhibiting a blue phase without an alignment layer may be used. The blue phase is one of the liquid crystal phases, and as the temperature of cholesteric liquid crystal is increased, the cholesteric phase This phase appears just before the transition from the qua phase to the isotropic phase. The blue phase only appears within a narrow temperature range. Therefore, to improve the temperature range, a liquid crystal composition mixed with 5% or more by weight of chiral agent was used. The material is used in the liquid crystal layer 113. The liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent is used. It exhibits a short response time and optical isotropy. Furthermore, it contains a liquid crystal exhibiting a blue phase and a chiral agent. The crystal composition does not require orientation treatment and has low viewing angle dependence. Furthermore, it does not require the application of an orientation film. Since it is good, rubbing treatment is unnecessary, thus eliminating electrostatic discharge damage caused by rubbing treatment. This can prevent defects or damage to liquid crystal displays during the manufacturing process. Cut.

[0104] Since the display device 100 is a transmissive liquid crystal display device, the pixel electrode 111 and common electrode 1 One or both of 12 are made of a conductive material that transmits visible light. Also, as mentioned above, A conductive material that transmits visible light is used in one or both of the conductive layer 232 and the conductive layer 262. Yes, they are.

[0105] Examples of conductive materials that transmit visible light include indium (In), zinc (Zn), and tin. It is preferable to use a material containing one or more selected elements from (Sn). Specifically, indioxide Contains um, indium tin oxide (ITO), indium zinc oxide, and tungsten oxide. Indium oxide, indium zinc oxide containing tungsten oxide, and titanium oxide containing Indium oxide, indium tin oxide containing titanium oxide, indium tin oxide containing silicon oxide Examples include tin oxide (ITSO), zinc oxide, and zinc oxide containing gallium. A film containing graphene can also be used. A film containing graphene, for example, is made of graphene oxide. It can be formed by reducing the film containing the film.

[0106] Of the conductive layer 232, conductive layer 262, pixel electrode 111, and common electrode 112, one or It is preferable to use multiple oxide conductors. The oxide conductor is used in transistor 20 It is preferable that the semiconductor layer 231 of 6 contains one or more types of metal elements. For example, The electrode layer 262 preferably contains indium, and is made of In-M-Zn oxide (where M is Al, T is Al). It is even more preferable that the film is made of i, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf. Furthermore, it is preferable that the conductive layer 232 is an In-Zn oxide film. Conductive layer 232 By making it an In-Zn oxide film, the conductive layer 232 becomes the display device 1 This can suppress the increase in resistance during the manufacturing process of 00.

[0107] Of the conductive layer 232, conductive layer 262, pixel electrode 111, and common electrode 112, one or Multiple of these may be formed using oxide semiconductors. Oxide semiconductors having the same metal element. By using this in two or more layers of the display device, the manufacturing equipment (e.g., film deposition equipment) can be used. Since processing equipment, etc., can be used in common across two or more processes, manufacturing costs can be reduced. It is possible.

[0108] Oxide semiconductors have oxygen vacancies in the film and, at least, the concentrations of impurities such as hydrogen and water in the film. On the other hand, it is a semiconductor material whose resistance can be controlled by means of an oxide semiconductor. A treatment that increases at least one of oxygen deficiency and impurity concentration in the body, or oxygen deficiency And by performing a process that reduces at least one of the impurity concentrations, the oxide semiconductor The resistivity can be controlled. Oxygen vacancies and impurity concentrations in oxide semiconductors. By performing a process that increases at least one of the following, the oxide semiconductor is made to have low resistance. A conductive material can be formed.

[0109] Furthermore, oxide conductors formed using oxide semiconductors have a high carrier density. Low-resistance oxide semiconductors, conductive oxide semiconductors, or highly conductive oxide semiconductors It can also be called the body.

[0110] Furthermore, by forming oxide semiconductors and oxide conductors with the same metal element, manufacturing costs can be reduced. This can be reduced. For example, by using a metal oxide target with the same metal composition. This can reduce manufacturing costs. Also, metal oxide targets with the same metal composition By using this, the etching gas or etching solution used when processing oxide semiconductors It can be used in common with the oxide semiconductor material and the oxide conductor material. Even if they contain group elements, their composition may differ. For example, during the manufacturing process of a display device, a film In some cases, the metal elements inside may detach, resulting in a different metallic composition.

[0111] Transistor 206 consists of a gate electrode 221, an insulating layer 211, a semiconductor layer 231, and an insulating layer 26 1. It has a conductive layer 222 and a conductive layer 232. The semiconductor layer 231 contains indium. Preferably, In-M-Zn oxide (where M is Al, Ti, Ga, Y, Zr, La, Ce It is even more preferable that the film is Nd, Sn, or Hf.

[0112] The gate electrode 221 has a region that overlaps with the semiconductor layer 231 via the insulating layer 211. Specifically, the gate electrode 221 overlaps with the channel region of the semiconductor layer 231 via the insulating layer 211. It has a domain.

[0113] Furthermore, a semiconductor layer 231 is provided so as to be in contact with the insulating layer 211. An insulating layer 261 is provided so as to be in contact with 1 and the insulating layer 211. The conductive layer 222 is an insulating layer It is electrically connected to the semiconductor layer 231 through an opening provided in the edge layer 261. The conductive layer 232 is electrically connected to the semiconductor layer 231 through an opening provided in the insulating layer 261. It is connected.

[0114] The insulating layer 211 functions as the gate insulating layer of the transistor 206. Semiconductor layer 2 31 has a channel region. The insulating layer 261 is a channel protection layer for transistor 206. It has the function of being the source electrode or drain of transistor 206. It functions as one of the electrodes. The conductive layer 232 is the source electrode of the transistor 206. Alternatively, it functions as the other drain electrode.

[0115] Furthermore, the gate electrode 221 can be part of the scan line. In other words, the scan line can be part of the trace. The configuration can have a portion that overlaps with the channel area of ​​the inverter 206. The electrode layer 222 can be part of the signal line. Therefore, the gate electrode 221 and the conductor It is preferable that the electrical resistance of the electrode layer 222 is sufficiently low. Therefore, the gate electrode 221 and The conductive layer 222 is preferably formed using a metal, alloy, etc. The gate electrode 221 A material having the function of blocking visible light may be used as the conductive layer 222.

[0116] As mentioned above, the conductive layer 232 is made of a material that has the function of transmitting visible light. This is preferable. In other words, in one embodiment of the present invention, the transistor 206 has a conductive layer 222 and The conductive layer 232 can be formed using different materials.

[0117] Specifically, the conductive material that transmits visible light and can be used in the conductive layer 232, etc., is copper. It may have a higher resistivity compared to conductive materials that block visible light, such as aluminum. Therefore, bus lines such as scan lines and signal lines use visible glass with low resistivity to prevent signal delay. It is preferable to form using a conductive material that blocks light, such as a metal material like copper. That is, the gate electrode 221 and the conductive layer 222 are preferably formed using a metal material such as copper. However, depending on the size of the pixel, the width of the bus line, the thickness of the bus line, etc., a conductive material that transmits visible light can be used for the bus line.

[0118] Also, by using a conductive layer that blocks visible light for the gate electrode 221, it is possible to suppress the light of the backlight from irradiating the semiconductor layer 231. As a result, the characteristic change of the transistor due to light can be suppressed, and the reliability of the transistor can be improved.

[0119] A light-shielding layer 132 is provided on the substrate 61 side of the semiconductor layer 231, and a gate electrode 221 that blocks visible light is provided on the substrate 51 side of the semiconductor layer 231, thereby suppressing the external light and the light of the backlight from irradiating the semiconductor layer 231.

[0120] In one aspect of the present invention, the conductive layer that blocks visible light may overlap with a part of the semiconductor layer 231 and may not overlap with another part of the semiconductor layer 231. For example, the conductive layer that blocks visible light only needs to overlap at least with the channel region of the semiconductor layer 231.

[0121] The transistor 206 is covered with the insulating layer 212, the insulating layer 214, and the insulating layer 215. Note that the insulating layer 212, the insulating layer 214, and the insulating layer 215 can also be regarded as components of the transistor 206. The insulating layer 215 has a function as a planarization layer.

[0122] The insulating layer 212 is configured to contain more oxygen than oxygen that satisfies the stoichiometric composition. This is preferable. Also, the insulating layers 214 and 215 may be configured to contain more oxygen than the oxygen that satisfies the stoichiometric composition. The oxygen contained in the insulating layer 212 or the like is partially transmitted through the insulating layer 261 by heat treatment or the like and supplied to the channel region of the semiconductor layer 231. As a result, when the channel region of the semiconductor layer 231 is an oxide semiconductor, the oxygen deficiency in the channel region can be reduced. From the above, the channel region of the semiconductor layer 231 can be made to have a higher resistance, fluctuations in the electrical characteristics of the transistor can be suppressed, and the reliability can be improved. When oxygen contained in the insulating layer 212 or the like is considered, part of it passes through the insulating layer 261 and is supplied to the channel region of the semiconductor layer 231 by heat treatment or the like. As a result, when the channel region of the semiconductor layer 231 is an oxide semiconductor, the oxygen deficiency in the channel region can be reduced. As a result, when the channel region of the semiconductor layer 231 is an oxide semiconductor, the oxygen deficiency in the channel region can be reduced. From the above, the channel region of the semiconductor layer 231 can be made to have a higher resistance, fluctuations in the electrical characteristics of the transistor can be suppressed, and the reliability can be improved. From the above, the channel region of the semiconductor layer 231 can be made to have a higher resistance, fluctuations in the electrical characteristics of the transistor can be suppressed, and the reliability can be improved.

[0123] In addition, for example, when an oxide conductor is used as the conductive layer 262, there is a possibility that the oxygen contained in the insulating layer 212 or the like diffuses into the conductive layer 262 and the conductive layer 262 becomes highly resistive. However, the conductive layer 232 is made of a material that is difficult to transmit oxygen. Therefore, the oxygen contained in the insulating layer 212 is difficult to be supplied to the conductive layer 262. Thus, even when an oxide conductor is used as the conductive layer 262, the increase in the resistance of the conductive layer 262 can be suppressed. the conductive layer 232 is made of a material that is difficult to transmit oxygen. Therefore, the oxygen contained in the insulating layer 212 is difficult to be supplied to the conductive layer 262. the conductive layer 232 is made of a material that is difficult to transmit oxygen. Therefore, the oxygen contained in the insulating layer 212 is difficult to be supplied to the conductive layer 262. Thus, even when an oxide conductor is used as the conductive layer 262, the increase in the resistance of the conductive layer 262 can be suppressed. the conductive layer 232 is made of a material that is difficult to transmit oxygen. Therefore, the oxygen contained in the insulating layer 212 is difficult to be supplied to the conductive layer 262. Thus, even when an oxide conductor is used as the conductive layer 262, the increase in the resistance of the conductive layer 262 can be suppressed.

[0124] On the substrate 61 side of the liquid crystal layer 113 of the display device 100, a coloring layer 131 and a light shielding layer 13 2 are provided. The coloring layer 131 is located at least in a portion overlapping the display region 918 of the pixel 900. In a portion other than the display region 918 (non-display region), a light shielding layer 132 is provided. The light shielding layer 132 overlaps at least a part of the transistor 206.

[0125] It is preferable to provide an overcoat 121 between the coloring layer 131 and the light shielding layer 132 and the liquid crystal layer 113. The overcoat 121 can suppress the diffusion of impurities contained in the coloring layer 131 and the light shielding layer 132 or the like into the liquid crystal layer 113. The overcoat 121 can suppress the diffusion of impurities contained in the coloring layer 131 and the light shielding layer 132 or the like into the liquid crystal layer 113.

[0126] Substrates 51 and 61 are bonded together by an adhesive layer 141. The liquid crystal layer 113 is sealed in the region surrounded by 61 and the adhesive layer 141.

[0127] When the display device 100 is to function as a transmissive liquid crystal display device, the polarizing plate is used for 900 pixels. Two are placed so as to sandwich the substrate. Figure 6 shows the polarizing plate 130 on the substrate 61 side. Light from the backlight, which is positioned outside the polarizing plate on side 51, passes through the polarizing plate. The light is incident on the surface. At this time, the voltage applied between the pixel electrode 111 and the common electrode 112 causes the liquid crystal to form. The orientation of layer 113 can be controlled, thereby controlling the optical modulation of light. That is, polarizer 13 The intensity of the light emitted through 0 can be controlled. Also, the incident light is directed to the colored layer 131. Therefore, light outside of specific wavelength ranges is absorbed, so the emitted light is, for example, red, blue, and The light will then appear green.

[0128] In addition to polarizing plates, circular polarizing plates can also be used, for example. Alternatively, a device consisting of a linear polarizer and a quarter-wavelength phase difference plate can be used. This reduces the viewing angle dependency of the display on the display device.

[0129] Furthermore, it is preferable that the liquid crystal element 40 is driven using a guest-host liquid crystal mode. When using guest-host liquid crystal mode, a polarizing plate is not required. By reducing light absorption, the light extraction efficiency can be increased, making the display of the display device brighter. .

[0130] The drive circuit section 64 includes a transistor 201.

[0131] The transistor 201 has a gate electrode 221, an insulating layer 211, a semiconductor layer 231, an insulating layer 26 1, a conductive layer 224, and a conductive layer 225. One of the conductive layer 224 and the conductive layer 225 has a function as a source electrode, and the other has a function as a drain electrode. An opening is provided in the insulating layer 261, and the conductive layer 224 and the semiconductor layer 23 1 are electrically connected through the opening. Also, an opening is provided in the insulating layer 261, and the opening is electrically connected to the conductive layer 225 and the semiconductor layer 231. Note that in the semiconductor layer 231, the connection portion with the conductive layer 224 and the connection portion with the conductive layer 225 are preferably low-resistance.

[0132] The transistor provided in the drive circuit unit 64 does not necessarily have a function of transmitting visible light That is, the conductive layer 224 and the conductive layer 225 can be formed using a metal material or the like Specifically, it can be formed using the same material as the conductive layer 222. Also, the conductive layer 224, the conductive layer 225, and the conductive layer 222 can be formed in the same process .

[0133] In the connection portion 204, the wiring 65 and the conductive layer 251 are connected to each other, and the conductive layer 251 and the connection body 24 2 are connected to each other. That is, in the connection portion 204, the conductive layer 225 is electrically connected to the FPC 72 through the conductive layer 251 and the connection body 242. With such a configuration , signals and power can be supplied from the FPC 72 to the wiring 65.

[0134] The wiring 65 is the conductive layer 224, the conductive layer 225, and the transistor that the transistor 201 has It can be formed using the same material and process as the conductive layer 222 of the sta 206. The electrolytic layer 251 is formed using the same material and process as the pixel electrodes 111 of the liquid crystal element 40. This is possible. In this way, the conductive layer constituting the connection part 204 can be used with the pixel 900 and the drive circuit By using the same material and process as the conductive layer used in part 64, an increase in the number of processes can be prevented. This is preferable.

[0135] Transistors 201 and 206, although having the same structure, have different structures. It is also acceptable. In other words, the transistor in the drive circuit section 64 and the transistor in the pixel 900 The inverter may have the same structure or a different structure. For example, drive circuit section 6 The transistor in 4 does not have to be a channel-protected transistor; for example, a channel A Nel-etch type transistor may also be used. In addition, the drive circuit section 64 may have multiple transistor structures. It may have a transistor, or pixel 900 may have transistors of multiple structures. For example, the drive circuit section 64 includes a channel protection type transistor and a channel etching type It may also have a transistor. For example, pixel 900 may have a channel-protected transistor. It may have a sta and a channel-etch type transistor.

[0136] Furthermore, the semiconductor layer 231 of transistor 201 and the semiconductor layer of transistor 206 The body layer 231 and the other may be formed from different materials. For example, the semiconductor of the transistor 201 Amorphous silicon or low-temperature polysilicon is used as the conductive layer 231, An oxide semiconductor may be used as the semiconductor layer 231 of the sta 206. Some transient By using amorphous silicon or low-temperature polysilicon, etc., in the semiconductor layer of the sta This allows for an increase in the on-current of the transistor. As a result, high-speed operation is possible. It becomes possible to fabricate circuits. Furthermore, it becomes possible to reduce the area occupied by the circuit. By applying transistors with high on-current, it is possible to enlarge or increase the resolution of display devices. Even if the number of wires increases, it is possible to reduce the signal delay in each wire. It is possible to suppress unevenness in the display. Furthermore, by applying such a configuration, reliability can be improved. High transistors can be realized.

[0137] Figure 7 shows a modified example of the display device 100. The display device 100 with the configuration shown in Figure 7 is a transition The configuration shown in Figure 6 is such that sta 206 and transistor 201 have a gate electrode 223. This is different from the display device 100.

[0138] The gate electrode 223 is provided so as to be in contact with the insulating layer 214. 23 is provided so as to have a region that overlaps with the semiconductor layer 231. Electrode gate 223 For example, metal materials such as copper can be used. Specifically, for example, gate electrode 2 The same material as 21 can be used. Note that gate electrode 223 can be used as gate electrode 221 They may be formed from different materials. For example, gate electrode 221 and gate electrode 223 One of the components may be formed from a light-shielding material such as a metal. Also, for example, a gate One of the electrodes 221 and gate electrode 223 may be formed from an oxide conductor.

[0139] The gate electrodes 221 and 223 can be electrically connected. A transistor in which two gate electrodes are electrically connected is a different type of transistor. Compared to this, it is possible to increase the field effect mobility and increase the on-current. As a result, it is possible to create circuits that can operate at high speed. Furthermore, the footprint of the circuit section is reduced. It becomes possible to reduce the product. By applying a transistor with a large on-current, the display Even if the number of wires increases due to the enlargement or increased resolution of the device, the signal delay in each wire It is possible to reduce this and suppress display unevenness. By applying this configuration, highly reliable transistors can be realized.

[0140] Of the transistors in the display device 100, some transistors have a gate electrode 22 The configuration may include 3, and the other transistors may not have gate electrodes 223. For example, transistor 201 has a configuration that includes a gate electrode 223, and transistor 20 6 may be configured without a gate electrode 223. Also, for example, transistor 206 The configuration has a gate electrode 223, and transistor 201 does not have a gate electrode 223. It may also be configured in such a way. Furthermore, some and all of the transistors in the display device 100 may be used. Alternatively, the configuration may not include the gate electrode 221.

[0141] Next, we will discuss in detail the materials and other elements that can be used in each component of the display device according to one aspect of the present invention. Next, I will provide an explanation. Note that explanations of components already described may be omitted. Furthermore, the following materials are also used in the display devices and touch panels shown below, as well as their components. It can be used as appropriate.

[0142] <Circuit boards 51, 61> There are no major restrictions on the material of the substrate of the display device according to one aspect of the present invention, and various substrates can be used. It is possible to do this. For example, glass substrates, quartz substrates, sapphire substrates, semiconductor substrates, ceramic A black substrate, a metal substrate, or a plastic substrate can be used.

[0143] By using a thin substrate, the display device can be made lighter and thinner. Furthermore, by using a substrate with a thickness sufficient to be flexible, a flexible display device can be realized. can.

[0144] A display device according to one aspect of the present invention involves forming transistors and the like on a fabricated substrate, and then on another substrate It is fabricated by transposing transistors, etc. By using the fabricated substrate, the characteristics can be improved. Formation of good transistors, formation of low-power transistors, and durable display devices To improve manufacturing, provide heat resistance to display devices, reduce the weight of display devices, or make display devices thinner. This is possible. The substrate on which the transistor is transposed is capable of forming the transistor. Not limited to circuit boards, but also paper circuit boards, cellophane circuit boards, stone circuit boards, wood circuit boards, cloth circuit boards (natural fibers (silk) Cotton, linen, synthetic fibers (nylon, polyurethane, polyester) or regenerated fibers (A (Including cete, cupro, rayon, recycled polyester, etc.), leather substrate, or rubber A circuit board or similar material can be used.

[0145] ≪Semiconductor layer≫ The semiconductor material used in the semiconductor layer is not particularly limited; for example, oxide semiconductors, silicon, Examples include germanium. The crystallinity of the semiconductor material used in the semiconductor layer is not particularly limited. Not performed; amorphous semiconductors, crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors) Either a conductor or a semiconductor having a crystalline region in part may be used. Using semiconductors is preferable because it suppresses the degradation of transistor characteristics.

[0146] For example, elements of Group 14, compound semiconductors, or oxide semiconductors can be used in the semiconductor layer. Yes, it can. Typically, this includes semiconductors containing silicon, semiconductors containing gallium arsenide, or indium. Oxide semiconductors containing these materials can be applied to semiconductor layers.

[0147] It is preferable to apply an oxide semiconductor to the semiconductor in which the transistor channel is formed. It is particularly preferable to use oxide semiconductors with a larger band gap than silicon. Using semiconductor materials with a wider band gap and lower carrier density than silicon This is preferable because it reduces the current when the transistor is off.

[0148] For oxide semiconductors, please refer to the above description and Embodiment 4, etc.

[0149] By using oxide semiconductors, fluctuations in electrical properties are suppressed, resulting in highly reliable transistors. It can be achieved.

[0150] Furthermore, its low off-current allows the charge stored in the capacitor via the transistor to be released over a long period of time. It is possible to hold it in this way. By applying such transistors to pixels, the display It also becomes possible to stop the drive circuit while maintaining the gradation of the image. This enables the creation of display devices with reduced power consumption.

[0151] Transistors 201 and 206 are purified to suppress the formation of oxygen vacancies. It is preferable to have an oxide semiconductor. This allows the transistor to function in the off state. The current value (off-current value) can be reduced. Therefore, when holding electrical signals such as image signals... The interval can be lengthened, and the write interval can also be set to be longer when the power is on. Therefore, This reduces the frequency of fresh cycles, thus lowering power consumption. .

[0152] Furthermore, transistors 201 and 206 exhibit relatively high field-effect mobility. Therefore, high-speed operation is possible. Transistors capable of such high-speed operation are used in display devices. By using this configuration, the transistors in the display unit and the transistors in the drive circuit unit can be placed on the same circuit board. It can be formed. That is, as a drive circuit, it can be formed separately from a silicon wafer or the like. Since it is not necessary to use a semiconductor device, the number of components in the display device can be reduced. Furthermore, by using transistors capable of high-speed operation in the display unit, high-quality images can be produced. We can provide an image.

[0153] ≪Insulating layer≫ Insulating materials that can be used for each insulating layer, overcoat, spacer, etc. of a display device. As such, organic insulating materials or inorganic insulating materials can be used. Examples include acrylic resin, epoxy resin, polyimide resin, polyamide resin, polyimide Doamide resins, siloxane resins, benzocyclobutene resins, and phenolic resins, etc. Examples include: silicon oxide film, silicon oxide nitride film, silicon nitride oxide film Cone film, silicon nitride film, aluminum oxide film, hafnium oxide film, yttrium oxide film Zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, galvanic oxide Examples include tannin films, cerium oxide films, and neodymium oxide films.

[0154] <<Conductive layer>> This includes the gate, source, and drain of a transistor, as well as various wirings and electrodes in a display device. The conductive layers include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, etc. Metals such as nium, molybdenum, silver, tantalum, or tungsten, or these as the main component. The alloy can be used as a single-layer or multi-layer structure. For example, aluminum A two-layer structure in which a titanium film is laminated on a film, a two-layer structure in which a titanium film is laminated on a tungsten film, A two-layer structure with a copper film laminated on a molybdenum film, and an alloy film containing molybdenum and tungsten on A two-layer structure with a copper film laminated on top of a copper-magnesium-aluminum alloy film. A layered structure, a titanium film or titanium nitride film, and a layered structure on top of the titanium film or titanium nitride film. A luminium film or copper film is laminated, and then a titanium film or titanium nitride film is formed on top of it. A three-layer structure, a molybdenum film or molybdenum nitride film, and the molybdenum film or molybdenum nitride film. An aluminum film or copper film is laminated on top of the butene film, and then a molybdenum film is laid on top of that. Alternatively, there are three-layer structures that form a molybdenum nitride film. For example, when the conductive layer is made into a three-layer structure... The first and third layers contain titanium, titanium nitride, molybdenum, tungsten, and molybdenum. Alloys containing den and tungsten, alloys containing molybdenum and zirconium, or molybdenum nitride A film made of butene is formed, and the second layer consists of copper, aluminum, gold or silver, or copper and man. It is preferable to form a film made of a low-resistance material such as a gun alloy. Indium oxide containing tungsten, indium zinc oxide containing tungsten oxide, oxide Titanium-containing indium oxide, titanium oxide-containing indium tin oxide, indium zinc Transparent conductive materials such as oxides and ITSO may also be used.

[0155] Alternatively, an oxide conductor may be formed by controlling the resistivity of the oxide semiconductor.

[0156] ≪Adhesive layer 141≫ The adhesive layer 141 can be a hard resin such as a thermosetting resin, a photocuring resin, or a two-component curable resin. Chemical resins can be used. For example, acrylic resin, urethane resin, epoxy resin, Alternatively, siloxane resin or the like can be used.

[0157] <<Connector 242>> The connector 242 may be, for example, an anisotropic conductive film (ACF). Conductive Film), or anisotropic conductive paste (ACP: Aniso You can use tropic conductive paste, etc.

[0158] ≪Colored layer 131≫ The colored layer 131 is a colored layer that transmits light in a specific wavelength range. Materials that can be used include metal materials, resin materials, and resin materials containing pigments or dyes. These are some examples.

[0159] ≪Light blocking layer 132≫ The light-shielding layer 132 is provided, for example, between adjacent colored layers 131 of different colors. Black matrix formed using metal materials or resin materials containing pigments or dyes The acrylic can be used as the light-shielding layer 132. It is preferable to also provide these in areas other than pixel 900, as this can suppress light leakage due to guided light, etc. stomach.

[0160] <3. Example of a method for manufacturing a display device> An example of a method for manufacturing the display device 100 with the configuration shown in Figure 6 is shown in Figures 8(A), (B), and (C). This will be explained using Figures 9(A) and 9(B). Note that in this example of a manufacturing method, the manufacturing By changing the configuration of transistors and liquid crystal elements, other display devices of this embodiment can also be created. It can be manufactured.

[0161] Thin films (insulating films, semiconductor films, conductive films, etc.) that make up a display device are each subjected to sputtering. Chemical vapor deposition (CVD) method Vacuum deposition, pulsed laser deposition (PLD) ion) method, Atomic Layer Deposition (ALD) It can be formed using methods such as CVD. An example of the CVD method is plasma chemical vapor deposition (PE Examples include CVD (Chemical Vapor Deposition) and thermal CVD (Chemical Vapor Deposition). An example of thermal CVD is organometallic chemical vapor deposition. One example is the deposition method (MOCVD: Metal Organic CVD).

[0162] The thin films that make up the display device (insulating films, semiconductor films, conductive films, etc.) are each spin-coated, Dip, spray coating, inkjet printing, dispensing, screen printing, offset Printing, doctor knife, slit coat, roll coat, curtain coat, knife coat It can be formed by methods such as [mention specific method].

[0163] The thin film constituting the display device can be processed using methods such as lithography. Alternatively, A thin film in the shape of an island may be formed by a film deposition method using a shielding mask. Alternatively, a nano-impedance may be used. The thin film may be processed by methods such as lint treatment, sandblasting, or lift-off.

[0164] When processing using photolithography, the light used for exposure is, for example, i-line (wave). (Length 365nm), g-line (wavelength 436nm), h-line (wavelength 405nm), and mixtures thereof Combined light is one example. Other examples include ultraviolet light, KrF laser light, or ArF laser light. It is also possible to use this. Alternatively, exposure may be performed by immersion lithography. Light used for exposure Examples include extreme ultraviolet (EUV) light and X Examples include lines and the like. Furthermore, an electron beam can be used instead of the light used for exposure. Extreme ultraviolet light, X-rays, or electron beams are preferred because they enable extremely fine processing. It is important to note that when exposure is performed by scanning a beam such as an electron beam, photomasking is necessary. The "suku" is unnecessary.

[0165] Thin film etching can be performed using dry etching, wet etching, or sandblasting. The following can be used.

[0166] When manufacturing the display device 100, first a conductive layer is formed on the substrate 51, and the conductive layer is lithographed. The wiring 902 and gate electrode 221 are formed by processing using methods such as the roughing method. As mentioned above, wiring 902 functions as a scanning line. Also, gate electrode 221 is It can be part of the wiring. Wiring 902 and gate electrode 221 have low resistivity. It is preferable to form it using a conductive material that blocks visible light, such as a metallic material like copper.

[0167] Next, an insulating layer 211 is formed. As mentioned above, the insulating layer 211 is provided on the display device 100. It functions as a gate insulating layer for a transistor.

[0168] Subsequently, a semiconductor layer is formed, and the semiconductor layer is processed by lithography or the like. , semiconductor layer 231 and semiconductor layer 262a are formed (Figure 8(A)). Semiconductor layer 231 is , having a region that functions as the channel region of a transistor provided in the display device 100 It is preferable to use oxide semiconductors as semiconductor layer 231 and semiconductor layer 262a. For example, it is preferable to include indium, and In-M-Zn oxide (where M is Al, Ti, It is even more preferable that the film is made of Ga, Y, Zr, La, Ce, Nd, Sn, or Hf.

[0169] Next, an insulating layer 261 is formed (Figure 8(B)). As mentioned above, the insulating layer 261 is used in the display device. A channel protection layer for the transistor provided on 100, and provided on the display device 100 It functions as a dielectric layer for capacitive elements.

[0170] The insulating layer 261 can be, for example, a silicon oxide nitride film. The insulating layer 261 is For example, it can be formed by the CVD method, particularly the PECVD method. When depositing a film using the CVD method, for example, silane gas is used as the deposition gas, and further Nitrogen oxide gases such as nitrous oxide are used. In this case, hydrogen etc. is present during the deposition of the insulating layer 261. It is supplied to the conductive layer 262a, and the resistance of the semiconductor layer 262a can be reduced. , conductive layer 262 which functions as the first electrode of a capacitive element provided in the display device 100 It is possible to form this.

[0171] Furthermore, the insulating layer 261 formed by the above method contains ammonia. Even if heat treatment or the like is performed after the deposition of film 1, and hydrogen supplied to the conductive layer 262 diffuses outward, The ammonia contained in the insulating layer 261 is supplied to the conductive layer 262, thereby the conductive layer 2 This can suppress the increase in resistivity of 62.

[0172] Furthermore, hydrogen and other substances are supplied to the semiconductor layer 231 during the deposition of the insulating layer 261, and the semiconductor layer 231 has In some cases, the channel region may have low resistance. However, due to subsequent processes, the semiconductor layer Since the channel region of 231 can be made highly resistive, the deposition time of the insulating layer 261 Therefore, reducing the resistance will not cause any problems.

[0173] Next, an opening is made in the insulating layer 261 that reaches the semiconductor layer 231, and then the semiconductor layer 232a This forms the semiconductor layer 232a, which has a region that overlaps with the conductive layer 262. The conductive layer 232a communicates with the semiconductor layer 231 through an opening provided in the insulating layer 261, thereby providing electrical communication. It connects to the network.

[0174] For example, it is preferable to use an In-Zn oxide as the semiconductor layer 232a. The puttering method is used to keep the substrate temperature at a level that does not require intentional heating, and uses argon (algebraic acid). It is preferable to deposit the In-Zn oxide film under a 100% atmosphere. Semiconductor layer 232 By using In-Zn oxide for a, the semiconductor layer 232a can be made to have low resistance in a later process. A conductive layer 232 can be formed, and the formed conductive layer 232 can be further processed in a later step. This can suppress the increase in resistance. Furthermore, the semiconductor layer 232a is In-Zn Other oxide semiconductors may be used. In this case, semiconductor layer 232a is semiconductor layer 23 It is preferable that 1 contains one or more types of metal elements. The semiconductor layer 232a is a semiconductor layer If 231 contains one or more types of metallic elements, the manufacturing equipment (e.g., thin-film deposition equipment, processing equipment) Since equipment (etc.) can be used in common across two or more processes, manufacturing costs can be reduced. It is possible.

[0175] Next, an opening is made in the insulating layer 261 that reaches the semiconductor layer 231, and then the conductive layer 222, The electrical layer 224, the conductive layer 225, and the wiring 65 are formed (Figure 8(C)). Note that the conductive layer 2 22, conductive layer 224, and conductive layer 225 are connected through openings provided in the insulating layer 261 It is electrically connected to the semiconductor layer 231.

[0176] As mentioned above, the conductive layer 222 is located on the source or drain electrode of the transistor 206. It has one function. In addition, the conductive layer 224 is connected to the source electrode of the transistor 201. It also functions as one of the drain electrodes. Furthermore, the conductive layer 225 is part of transistor 2 It functions as either the source electrode or the drain electrode of 01. Also, conductive layer 222 This can be part of the signal line. Conductive layer 222, conductive layer 224, conductive layer 225 and The wiring 65 uses a conductive material that blocks visible light with low resistivity, such as a metal material like copper. It is preferable to form it.

[0177] Furthermore, since the insulating layer 261 functions as a channel protection layer, the conductive layer 222, semiconductor When forming layer 232a, conductive layer 224, and conductive layer 225, the channels of semiconductor layer 231 This makes it possible to suppress etching damage to the area. This stabilizes the electrical characteristics of the transistors in the display device 100, thereby providing a highly reliable transistor. It is possible to achieve this goal.

[0178] Furthermore, after forming an opening in the insulating layer 261, an inert gas such as argon is applied to the semiconductor layer 231. By supplying power to transistor 206 and / or transistor 201, the source power of transistor 206 and / or transistor 201 is supplied. The contact portion with the electrode and the contact portion with the drain electrode may be made n-type. Method of supplying inert gas. Examples include sputtering, ion implantation, ion doping, and plasma imaging. This can be done using methods such as ion implantation or plasma treatment. and / or increase the on-current of transistor 201 to speed up the operation of the display device 100. It is possible.

[0179] Next, an insulating layer 212 is formed. The insulating layer 212 may have, for example, silicon oxide nitride. It can be formed into a film. The insulating layer 212 is formed by, for example, CVD, particularly PECVD. This is possible. When a film containing silicon oxide nitride is formed by the CVD method, for example, Silane gas is used as the film-forming gas, and further nitrogen oxide gases such as nitrous oxide are used. In this case, hydrogen and the like are supplied to the semiconductor layer 232a during the deposition of the insulating layer 212, and the semiconductor layer 23 2a can be made to have low resistance. This allows the source electrode of transistor 206 or A conductive element that functions as a drain electrode and as the second electrode of the capacitive element 34. A layer 232 can be formed.

[0180] Furthermore, the insulating layer 212 contains more oxygen than is required to satisfy the stoichiometric composition. Preferably. For example, when the insulating layer 212 is formed by the CVD method, oxygen is used as the film formation gas. Alternatively, a mixture of oxygen and nitrogen oxide gases such as nitrous oxide and nitrogen dioxide may be used. This allows oxygen to be incorporated into the insulating layer 212. Also, after the insulating layer 212 is formed, On-injection method, ion doping method, plasma immersion ion implantation method, plasma treatment, etc. Oxygen may be introduced into the insulating layer 212.

[0181] The oxygen contained in the insulating layer 212 partially permeates the insulating layer 261 through heat treatment, etc., into the semiconductor layer It is supplied to the channel region of 231. As a result, the channel region of semiconductor layer 231 oxidizes In the case of a solid semiconductor, oxygen vacancies in the channel region can be reduced. Therefore, The channel region of the semiconductor layer 231 can be made highly resistive, which alters the electrical characteristics of the transistor. This can suppress movement and improve reliability.

[0182] Furthermore, if, for example, an oxide conductor is used as the conductive layer 262, the insulating layer 212, etc. Oxygen may diffuse into the conductive layer 262, potentially increasing its resistance. However, The conductive layer 232 is made of a material that is impermeable to oxygen. Therefore, the insulating layer 212 The oxygen contained within is not easily supplied to the conductive layer 262. Therefore, an oxide conductive layer is used for the conductive layer 262. Even when using an electrolytic material, it is possible to suppress the increase in resistance of the conductive layer 262.

[0183] Next, an insulating layer 214 is formed. Then, an insulating layer 215 is formed. Formation of insulating layer 215 After that, chemical mechanical polishing (CMP) The insulating layer 215 is subjected to a planarization treatment using method g) (Figure 9(A)).

[0184] Next, openings reaching the conductive layer 232 are made in the insulating layer 215, insulating layer 214, and insulating layer 212. An opening is provided that reaches the section and wiring 65. Then a conductive layer is provided, and the conductive layer is lithographed. The pixel electrode 111 and conductive layer 251 are formed by processing using methods such as roughing. Through the openings provided in the insulating layer 215, insulating layer 214, and insulating layer 212, the pixel electricity Pole 111 is electrically connected to conductive layer 232, and conductive layer 251 is electrically connected to wiring 65. As mentioned above, the pixel electrode 111 is made of a material that has the function of transmitting visible light. This is used.

[0185] Next, an alignment film 133a is formed to cover the pixel electrode 111 (Figure 9(B)). On the substrate 61, a light-shielding layer 132, a coloring layer 131, an overcoat 121, and a common electrode 112 , and the orientation film 133b is formed (Figure 9(C)). As mentioned above, the common electrode 112 is Therefore, materials that have the function of transmitting visible light are used.

[0186] Furthermore, an adhesive layer 14 is placed between the substrate 51 shown in Figure 9(B) and the substrate 61 shown in Figure 9(C). The liquid crystal layer 113 is sealed using 1. Then, the connector 242, FPC 72, and polarizing plate are used. 130 is formed. Thus, the display device 100 with the configuration shown in Figure 6 can be constructed. ru.

[0187] As described above, in the method for manufacturing a display device according to one aspect of the present invention, the transistor 206 is The semiconductor layer 231 and the conductive layer 262 of the capacitive element 34 are formed in the same process. This is possible. In addition, an insulating layer that functions as a channel protection layer for transistor 206, The insulating layer, which functions as a dielectric layer for the capacitive element 34, is combined with the insulating layer 261 in one process. It can be formed by the source electrode or drain electrode of transistor 206. A conductive layer having the function of the other, and a conductive layer having the function of the second electrode of the capacitive element 34 The electrolytic layer and the conductive layer 232 can be formed in a single process. As a result, the display device The manufacturing process for the device 100 can be simplified, thereby reducing the manufacturing cost of the display device 100. It is possible.

[0188] Furthermore, as mentioned above, the conductive layer 262 and the conductive layer 232 have the function of transmitting visible light. This allows the aperture ratio of the pixels 900 of the display device 100 to be increased. The higher the aperture ratio, the higher the light extraction efficiency, thus reducing the power consumption of the display device 100. It can be reduced. Also, the image displayed by the display device 100 can be made higher resolution. It is possible.

[0189] <4. Pixel arrangement example> Figures 10(A) and (B) show examples of the arrangement of pixel 900 and its subpixels. In Figures 10(A) and (B), the red subpixel R, the green subpixel G, and the blue subpixel B are Therefore, an example of how one pixel is formed is shown. Figures 10(A) and (B) show multiple scan lines 81 The x-axis extends in the x-direction, and multiple signal lines 82 extend in the y-direction, with the scan line 81 and the signal Line 82 intersects.

[0190] As shown within the dashed-dot frame in Figure 10(A), the sub-pixel consists of transistor 206 and a capacitive element. It has 34 and a liquid crystal element 40. The gate electrode of transistor 206 is connected to scan line 81 and Electrically connected. Of the source and drain electrodes of transistor 206, one One is electrically connected to signal line 82, and the other is connected to the second electrode of the capacitive element 34 and the liquid crystal element. The first electrode of the capacitive element 34 and the liquid crystal element 40 are electrically connected. A constant potential is applied to each of the first electrodes.

[0191] Figures 10(A) and (B) show an example of applying source line inversion drive. Signal A1 and signal A2 is a signal with the same polarity. Signals B1 and B2 are signals with the same polarity. Signal B1 is a signal with opposite polarity. Signals A2 and B2 are signals with opposite polarity. It is the number.

[0192] As display devices become higher resolution, the distance between subpixels decreases. Therefore, for example, Figure 10(A) As shown within the dashed-dotted box, in the subpixel where signal A1 is input, signal B1 is input Near the signal line 82, the liquid crystal is susceptible to the influence of the potentials of both signal A1 and signal B1. This makes it easier for liquid crystal alignment defects to occur.

[0193] In Figure 10(A), the direction in which multiple subpixels exhibiting the same color are arranged is the y-direction. The direction in which signal line 82 extends is approximately parallel to the direction in which it extends. As shown within the dashed-dotted box in Figure 10(A) In addition, a sub-pixel exhibiting a different color is adjacent to the longer side of the sub-pixel.

[0194] In Figure 10(B), the direction in which multiple subpixels exhibiting the same color are arranged is the x-direction. It intersects with the direction in which signal line 82 extends. As shown within the dashed-dotted box in Figure 10(B), A sub-pixel exhibiting the same color is adjacent to the shorter side of the pixel.

[0195] As shown in Figure 10(B), the side of the subpixel is roughly parallel to the direction in which the signal line 82 extends. However, when the shorter side is used, liquid crystal alignment defects are more likely to occur compared to when the longer side is used (Figure 10(A)). The suction region can be narrowed. As shown in Figure 10(B), liquid crystal alignment defects can occur. When a plume region is located between subpixels exhibiting the same color, when it is located between subpixels exhibiting different colors... Compared to the case shown in Figure 10(A), the display malfunction becomes less likely to be noticed by the user of the display device. In one embodiment of the present invention, the direction in which a plurality of subpixels exhibiting the same color are arranged is the signal line It is preferable that the direction in which 82 extends intersects with the direction in which it extends.

[0196] <5. Example of Display Device Configuration 3> One aspect of the present invention is a display device (input / output device or touch panel) equipped with a touch sensor. It can be applied to (also known as). Applying the configuration of each of the above-mentioned display devices to a touch panel. This is possible. In this embodiment, the main example is one in which a touch sensor is mounted on the display device 100. explain.

[0197] The detection element (also called a sensor element) of a touch panel according to one embodiment of the present invention is not limited. Various sensors capable of detecting the proximity or contact of an object to be detected, such as a finger or stylus, It can be used as a detection element.

[0198] Examples of sensor types include capacitive, resistive, surface acoustic wave, and infrared sensors. Various methods can be used, such as formula, optical, and pressure-sensitive methods.

[0199] In this embodiment, a touch panel having a capacitive sensing element will be used as an example for explanation. .

[0200] Capacitive capacitance methods include surface capacitance and projected capacitance. Capacitive capacitance methods include self-capacitance methods and mutual capacitance methods. This is preferable because it enables simultaneous multi-point detection.

[0201] A touch panel according to one aspect of the present invention is formed by bonding together a separately manufactured display device and a detection element. The configuration includes a substrate supporting the display element and a detection element on one or both of the opposing substrates. Various configurations can be applied, such as those that include electrodes.

[0202] Figures 11 and 12 show examples of touch panels. Figure 11(A) shows touch panel 35 This is a perspective view of 0. Figure 11(B) is a schematic perspective view of Figure 11(A) unfolded. For clarity, only representative components are shown. In Figure 11(B), the substrate 61 and The substrate 162 is shown with a dashed outline only. Figure 12 is a cross-sectional view of the touch panel 350. ru.

[0203] The touch panel 350 has a configuration in which a display device and a sensing element, which were manufactured separately, are bonded together. ru.

[0204] The touch panel 350 has an input device 375 and a display device 370, and these are stacked together. It's being kicked.

[0205] The input device 375 consists of a substrate 162, electrodes 127 and 128, multiple wirings 137, and multiple It has a number of wires 138. FPC72b has a number of wires 137 and a number of wires 138 Each is electrically connected. IC73b is provided on FPC72b.

[0206] The display device 370 has two substrates, 51 and 61, which are positioned opposite each other. It has a display unit 62 and a drive circuit unit 64. Wiring 65 and the like are provided on the circuit board 51. The FPC72a is electrically connected to wiring 65. The FPC72a has IC73a A system is in place.

[0207] Signals and power are supplied to the display unit 62 and the drive circuit unit 64 from the wiring 65. The signal and power are input to wiring 65 via FPC72a from an external source or IC73a. It will be done.

[0208] Figure 12 shows the region including pixel 900, drive circuit section 64, FPC72a, and FPC72b This is a cross-sectional view of the region including the area shown.

[0209] Substrate 51 and substrate 61 are bonded together by an adhesive layer 141. 62 is bonded by the adhesive layer 169. Here, from substrate 51 to substrate 61 Each layer corresponds to the display device 370. Also, each layer from the substrate 162 to the electrode 124 This corresponds to the input device 375. In other words, the adhesive layer 169 is connected to the display device 370 and the input device 375. It can be said that they are glued together.

[0210] The configuration of the display device 370 shown in Figure 12 is the same as that of the display device 100 shown in Figure 6. I will omit the detailed explanation.

[0211] A polarizing plate 165 is bonded to the substrate 51 by an adhesive layer 167. The backlight 161 is attached to 5 by an adhesive layer 163.

[0212] Backlight 161 refers to either a direct-lit backlight or an edge-lit backlight. Examples include LEDs. Dimming becomes possible, which is preferable because it allows for increased contrast. Also, Using a girite-type backlight reduces the thickness of the module, including the backlight. This is preferable. Furthermore, quantum dots may be used as the backlight 161.

[0213] Quantum dots are semiconductor nanocrystals with a size of several nanometers, and their size is 1 × 10⁻⁶. 3 From 1 × 10 6 It is composed of about 100 atoms. Quantum dots undergo energy shifts depending on their size. Therefore, even quantum dots composed of the same material will have different emission wavelengths depending on their size. Furthermore, the emission wavelength can be easily adjusted by changing the size of the quantum dots used. can.

[0214] Furthermore, because quantum dots have a narrow peak width in their emission spectrum, they can produce emission with good color purity. This is possible. Furthermore, the theoretical external quantum efficiency of quantum dots is said to be almost 100%. This accounts for a significant portion of the 25% of organic compounds that exhibit fluorescence, and the proportion of organic compounds that exhibit phosphorescence is much higher than that of organic compounds that exhibit phosphorescence. It is equivalent to a composite material. Therefore, by using quantum dots as a light-emitting material... This allows for the creation of light-emitting elements with high luminescence efficiency. Furthermore, quantum dots, which are inorganic compounds, Because of its excellent inherent stability, it is also desirable in terms of lifespan. It is possible.

[0215] The materials that make up quantum dots include elements from Group 14 of the periodic table, elements from Group 15 of the periodic table, and the periodic table Group 16 elements, compounds consisting of multiple Group 14 elements of the periodic table, and elements from Group 4 to Group 1 of the periodic table. Compounds of elements belonging to Group 4 and elements of Group 16 of the periodic table, and compounds of elements of Group 2 and Group 16 of the periodic table. Compounds with elements, compounds of Group 13 elements and Group 15 elements of the periodic table, Group 13 elements of the periodic table Compounds of elements with Group 17 elements of the periodic table, and compounds of Group 14 elements with Group 15 elements of the periodic table. Compounds, compounds of Group 11 and Group 17 elements of the periodic table, iron oxides, titanium oxides, Examples include chalcogenide spinels and various semiconductor clusters.

[0216] Specifically, cadmium selenide, cadmium sulfide, cadmium telluride, and zinc selenide. Zinc oxide, zinc sulfide, zinc telluride, mercury sulfide, mercury selenide, mercury telluride, arsenide Indium, indium phosphide, gallium arsenide, gallium phosphide, indium nitride, gallium nitride Indium antimonide, gallium antimonide, aluminum phosphide, aargonide Aluminum, aluminum antimonide, lead selenide, lead telluride, lead sulfide, lead selenide Indium, indium telluride, indium sulfide, gallium selenide, arsenic sulfide, selenium Arsenic ions, arsenic telluride, antimony sulfide, antimony selenide, antimony telluride, sulfur Bismuth bismuth, bismuth selenide, bismuth telluride, silicon, silicon carbide, germanium Tin, selenium, tellurium, boron, carbon, phosphorus, boron nitride, boron phosphide, boron arsenide, Aluminum nitride, aluminum sulfide, barium sulfide, barium selenide, barium telluride Um, calcium sulfide, calcium selenide, calcium telluride, beryllium sulfide, se Beryllium lenide, beryllium telluride, magnesium sulfide, magnesium selenide, sulf Germanium selenium, germanium selenide, germanium telluride, tin sulfide, tin selenide, Tin telluride, lead oxide, copper fluoride, copper chloride, copper bromide, copper iodide, copper oxide, copper selenide, oxide Nickel, cobalt oxide, cobalt sulfide, triiron tetroxide, iron sulfide, manganese oxide, molybdenum sulfide Butene, vanadium oxide, tungsten oxide, tantalum oxide, titanium oxide, zirconium oxide Aluminum, silicon nitride, germanium nitride, aluminum oxide, barium titanate, selenium and Compounds of zinc and cadmium, compounds of indium, arsenic and phosphorus, cadmium, selenium and sulfur Yellow compounds, compounds of cadmium, selenium, and tellurium, compounds of indium, gallium, and arsenic substances, compounds of indium, gallium, and selenium, compounds of indium, selenium, and sulfur, copper and Examples include compounds of indium and sulfur, and combinations thereof, but are not limited to these. It is not fixed. Furthermore, it is a so-called alloy-type quantum dot whose composition can be expressed in any ratio. You may also use this. For example, a cadmium-selenium-sulfur alloy quantum dot has elemental content By changing the ratio, the emission wavelength can be changed, making it an effective way to obtain blue light. It is one of the means to achieve this.

[0217] Quantum dot structures include core type, core-shell type, core-multishell type, etc. Either of these may be used, but another inorganic material with a wider band gap should be used to cover the core. By forming a shell, defects and dangling bonds present on the nanocrystalline surface are eliminated. The impact can be reduced. This greatly improves the quantum efficiency of the luminescence, thus reducing the core- It is preferable to use shell-type or core-multishell type quantum dots. Examples include zinc sulfide and zinc oxide.

[0218] Furthermore, because quantum dots have a high proportion of surface atoms, they are highly reactive and prone to aggregation. Therefore, a protective agent is attached to the surface of the quantum dot or a protective group is provided. It is preferable that the protective agent is attached or a protective group is provided. This prevents aggregation and increases solubility in the solvent. Furthermore, it reduces reactivity and electricity. It is also possible to improve the stability. Examples of protective agents (or protective groups) include, Polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxy Polyoxyethylene alkyl ethers such as ethylene oleyl ether, tripropyl Phosphine, tributylphosphine, trihexylphosphine, trioctylphosphine Trialkylphosphines such as polyoxyethylene n-octylphenyl ether, Polyoxyethylene alkylphenyls such as polyoxyethylene n-nonylphenyl ether Ethers, tri(n-hexyl)amines, tri(n-octyl)amines, tri(n-hexyl)amines Tertiary amines such as silamines, tripropylphosphine oxide, tributylphosphine Phosphate oxide, trihexylphosphine oxide, trioctylphosphine oxide, Organophosphorus compounds such as decylphosphine oxide, polyethylene glycol dilaurate polyethylene glycol diesters such as polyethylene glycol distearate, Furthermore, the organic nitrogenization of nitrogen-containing aromatic compounds such as pyridine, lutidine, colidine, and quinolines. Compounds, hexylamine, octylamine, decylamine, dodecylamine, tetradecyl Aminoalkanes such as amines, hexadecylamines, and octadecylamines, dibutylsulfate Dialkyl sulfides such as phyto, dimethyl sulfoxide and dibutyl sulfoxide, etc. Organic sulfur compounds such as dialkyl sulfoxides, thiophenes, and other sulfur-containing aromatic compounds, Higher fatty acids such as lumitic acid, stearic acid, and oleic acid, alcohols, and sorbitan fats. Acid esters, fatty acid modified polyesters, tertiary amine modified polyurethanes, polyethylene Examples include nimines, etc.

[0219] As the size of a quantum dot decreases, the band gap increases, allowing it to reach the desired wavelength. The size is adjusted appropriately so that light is obtained. As the crystal size decreases, Because the light emitted by the child dots shifts towards the blue side, that is, towards the higher energy side, the quantum dot By changing the size, the wavelength range of the spectrum in the ultraviolet, visible, and infrared regions can be changed. The emission wavelength can be adjusted over a certain period. The size (diameter) of the quantum dot is 0. A range of 5 nm to 20 nm, preferably 1 nm to 10 nm, is commonly used. Furthermore, the narrower the size distribution of quantum dots, the narrower the emission spectrum becomes, and the color purity... A good degree of luminescence can be obtained. Furthermore, the shape of the quantum dot is not particularly limited, and can be spherical, It may be rod-shaped, disc-shaped, or in other shapes. Note that a rod-shaped quantum dot is called a quantum rod. Since it exhibits directional light polarized in the c-axis direction, a quantum rod is used as the light-emitting material. By doing so, it is possible to obtain a light-emitting element with better external quantum efficiency.

[0220] A polarizing plate 166 is bonded to the substrate 162 by an adhesive layer 168. A protective substrate 160 is bonded to 66 by an adhesive layer 164. When incorporating the touch panel 350, the protective substrate 160 is positioned so that the object to be detected, such as a finger or stylus, is... It may also be used as a substrate that comes into direct contact. The protective substrate 160 has substrates 51 and 61, etc. A substrate that can be used can be applied. The protective substrate 160 has substrate 51 and A configuration in which a protective layer is formed on the surface of a substrate that can be used for substrate 61, etc., or tempered glass It is preferable to use the like. The protective layer can be formed by a ceramic coating. Alternatively, the protective layer may be silicon oxide, aluminum oxide, yttrium oxide, etc. It can be formed using inorganic insulating materials such as tria-stabilized zirconia (YSZ).

[0221] A polarizing plate 166 may be placed between the input device 375 and the display device 370. In that case, see Figure 1. The protective substrate 160, adhesive layer 164, and adhesive layer 168 shown in 2 do not need to be provided. The substrate 162 can be positioned on the outermost surface of the touch panel 350. It is preferable to apply a material to 62 that can be used for the protective substrate 160 described above.

[0222] Electrodes 127 and 128 are provided on the substrate 61 side of substrate 162. 7 and electrode 128 are formed on the same plane. The insulating layer 125 is formed on electrode 127 and It is provided so as to cover electrode 128. Electrode 124 is an opening provided in the insulating layer 125 It is electrically connected to two electrodes 128 that are positioned to sandwich electrode 127 via this. .

[0223] Of the conductive layers of the input device 375, the conductive layer that overlaps with the display area 918 (electrode 127, 1 For example 28, a material that transmits visible light is used.

[0224] Wiring 137 obtained by processing the same conductive layer as electrodes 127 and 128 is identical to electrode 124. It is connected to a conductive layer 126 obtained by processing the conductive layer of 24. The conductive layer 126 is connected to the connecting body 24 It is electrically connected to FPC72b via 2b.

[0225] This embodiment can be appropriately combined with other embodiments. Furthermore, this specification Furthermore, if multiple configuration examples are shown within a single embodiment, the configuration examples may be combined as appropriate. It is possible to do so.

[0226] (Embodiment 2) In this embodiment, the operating modes that can be performed by a display device according to one aspect of the present invention are shown in Figure I will explain using 13.

[0227] Note that the following assumes operation at a normal frame rate (typically between 60Hz and 240Hz). There is a normal operating mode and a mode that operates at a low frame rate. The Idling Stop (IDS) drive mode will be explained using an example.

[0228] Note that IDS drive mode is a mode in which, after the image data writing process is performed, the image data is written This refers to a driving method that stops the changeover. Image data is written first, and then the next... By extending the interval until the image data is written, the time required to write the image data during that period is reduced. This reduces power consumption. The IDS drive mode is, for example, the normal operating mode. The frame frequency can be set to about 1 / 100 to 1 / 10 of that of the standard. Still images are continuous The video signal is the same between frames. Therefore, the IDS drive mode displays still images. This is particularly effective in the following cases. By using IDS drive to display images, power consumption is reduced. In addition to reducing screen flicker, it also suppresses eye strain.

[0229] Figures 13(A), (B), and (C) show the pixel circuit and the normal drive mode and IDS drive mode. This is a timing chart explaining the do. Note that in Figure 13(A), the first display element 50 1 (here, a reflective liquid crystal element) and the pixel circuit electrically connected to the first display element 501 This indicates the path 506. Also, in the pixel circuit 506 shown in Figure 13(A), the signal line SL And, the gate line GL, and the transistor M1 connected to the signal line SL and the gate line GL, Capacitive element Cs connected to transistor M1 LC This indicates the first display element. One electrode of 501, one of the source or drain of transistor M1, and a capacitive element Cs LC The node to which it is connected will be designated as node ND1.

[0230] Transistor M1 is a capacitive element Cs LC This could be a leak path for data D1 held in [location]. Therefore, a smaller off-current for transistor M1 is preferable. It is preferable to use a transistor that has a metal oxide in the semiconductor layer where the channel is formed. It seems that metal oxides perform at least one of the following actions: amplification, rectification, and switching. If present, the metal oxide is used to make a metal oxide semiconductor. conductor) or oxide semiconductor (oxide semiconductor) It can be abbreviated as OS. Below, a typical example of a transistor is the formation of a channel. A transistor that uses an oxide semiconductor in the semiconductor layer (also called an "OS transistor"). We will explain using ). OS transistors are more advanced than transistors using polycrystalline silicon, etc. It also has the characteristic of having an extremely low leakage current (off-current) when it is not conducting. Transistor M1 By using an OS transistor, the charge supplied to node ND1 can be retained for a long period of time. It is possible.

[0231] In the circuit diagram shown in Figure 13(A), the liquid crystal element LC is the leak path for data D1. Therefore, in order to properly drive the IDS, the resistivity of the liquid crystal element LC should be 1.0 × 10 1 4 It is preferably set to be Ω·cm or more.

[0232] In the channel region of the OS transistor, for example, In-Ga-Zn oxide, I n-Zn oxide, etc. can be preferably used. Also, as the In-Ga-Zn oxide Typically, a composition in the vicinity of In:Ga:Zn = 4:2:4.1 [atomic ratio] can be used. It can be.

[0233] FIG. 13(B) is a timing chart showing the waveforms of the signals applied to the signal line SL and the gate line GL in the normal driving mode. In the normal driving mode, it operates at a normal frame frequency ( for example, 60 Hz). If one frame period is represented from period T1 to T3, a scanning signal is applied to the gate line GL in each frame period, and an operation of writing data D1 from the signal line SL to the node ND1 is performed. This operation is the same whether writing the same data D1 from period T1 to T3 or writing different data.

[0234] On the other hand, FIG. 13(C) is a timing chart showing the waveforms of the signals applied to the signal line SL and the gate line GL in the IDS driving mode. In IDS driving, it operates at a low frame frequency (for example, 1 Hz). If one frame period is represented by period T1, and the data writing period within it is period T W RET W RET RET RET W W W L C C RET RET The data D1, which was initially written with M1 in a non-conductive state, is then transferred to the capacitive element Cs LC Action to hold This will be done. Note that for low-speed frame frequencies, for example, 0.1Hz to less than 60Hz. That would be fine. Alternatively, for example, you could set it to between 0.1Hz and 20Hz.

[0235] This embodiment can be combined with other embodiments as appropriate.

[0236] (Embodiment 3) In this embodiment, an example of a method for driving a touch sensor will be described with reference to the drawings.

[0237] <Examples of sensor detection methods> Figure 14(A) is a block diagram showing the configuration of a mutual capacitive touch sensor. A) shows the pulse voltage output circuit 551 and the current detection circuit 552. Note that Figure 14( In A), the electrode 521 to which a pulse voltage is applied and the electrode 522 to which the change in current is detected are positioned separately. These are shown as six wires, X1 to X6 and Y1 to Y6, respectively. Also see Figure 14. (A) illustrates the capacitance 553 formed by the superposition of electrodes 521 and 522. Furthermore, electrodes 521 and 522 may be interchangeable in their functions.

[0238] The pulse voltage output circuit 551 is used to sequentially apply pulse voltages to the wiring X1 to X6. This is a circuit. When a pulse voltage is applied to the wiring X1 to X6, capacitance 553 is formed. An electric field is generated between electrode 521 and electrode 522. This electric field generated between the wires can be shielded or otherwise contained. By causing a change in the mutual capacitance of quantity 553, proximity or contact of the object to be detected is detected. It can be released.

[0239] The current detection circuit 552 detects changes in the mutual capacitance of capacitor 553 in the wiring of Y1 to Y6. This is a circuit for detecting changes in current. In the wiring of Y1 to Y6, the proximity of the object to be detected and If there is no contact, the detected current value does not change, but if the object being detected is in proximity or in contact with it... When the mutual capacitance decreases further, a change in the current value is detected. Note that current detection is performed as follows: This can be done using an integrating circuit or similar method.

[0240] Furthermore, one or both of the pulse voltage output circuit 551 and the current detection circuit 552 are shown in Figure 5, etc. They may be formed on the substrate 51 or substrate 61 shown. For example, the display unit 62 and the drive circuit unit When formed simultaneously with 64, the process can be simplified, and it can also be used to drive the touch sensor. This is preferable because it reduces the number of components. Also, the pulse voltage output circuit 551 and One or both of the current detection circuits 552 may be mounted on IC73.

[0241] In particular, as transistors formed on the substrate 51, multiple connections are made in the semiconductor layer where the channel is formed. When using crystalline silicon such as crystalline silicon or single-crystal silicon, the pulse voltage output circuit 551 The driving capability of circuits such as the current detection circuit 552 is improved, and the sensitivity of the touch sensor is improved. It is possible.

[0242] Figure 14(B) shows the input and output waveforms for the mutual capacitive touch sensor shown in Figure 14(A). The timing chart is shown below. Figure 14(B) shows the detected objects in each matrix over a 1-frame period. The system will perform detection of the object to be detected (non-touch). Also, in Figure 14(B), the case where no object to be detected is detected (non-touch) This shows two cases: when detecting an object (touch) and when detecting an object to be detected. Note that Y1 For the wiring to Y6, the waveform shown represents the voltage value corresponding to the detected current value.

[0243] A pulse voltage is applied sequentially to the wiring of X1-X6, and according to this pulse voltage, Y1 to The waveform changes in the wiring of Y6. If there is no proximity or contact with the object to be detected, X1 to X The waveforms of Y1 to Y6 change uniformly in response to the voltage change in wiring 6. Meanwhile, the detected object At points of proximity or contact, the current value decreases, and consequently, the waveform of the corresponding voltage value also changes. To transform.

[0244] In this way, by detecting changes in mutual capacitance, the proximity or contact of the object being detected can be detected. It is possible.

[0245] <Examples of driving methods for display devices> Figure 15(A) is a block diagram showing an example of the configuration of a display device. Driving circuit GD (scan line drive circuit), source drive circuit SD (signal line drive circuit), multiple pixels p This shows a display unit having ix. Note that in Figure 15(A), the gate drive circuit GD is electrically connected. The gate lines x_1 to x_m (where m is a natural number) are connected to the source drive circuit SD, and electrically to the source drive circuit SD. For each connected source line y_1 to y_n (where n is a natural number), each pixel pix These are denoted by the signs (1,1) through (n,m).

[0246] Figure 15(B) shows the gate and source lines in the display device shown in Figure 15(A). This is a timing chart of the signals. In Figure 15(B), the data signals are shown for each frame period. The diagram shows the cases where the numbers are rewritten and where the data signals are not rewritten. 15(B) does not take into account periods such as return periods.

[0247] When the data signal is rewritten every frame period, the gate lines x_1 to x_m will have the following properties: Scan signals are applied sequentially. During the horizontal scanning period 1H, when the scan signal is at the H level, each A data signal D is applied to the source lines y_1 through y_n of the column.

[0248] If the data signal is not rewritten every frame period, it is applied to gate lines x_1 to x_m. The scanning signal is stopped. Also, during the horizontal scanning period 1H, the source lines y_1 to y_n of each column Stop the data signal being supplied.

[0249] A driving method that does not rewrite the data signal every frame period is particularly useful for pixels (pix). This is effective when applying oxide semiconductors to the semiconductor layer in which the channel is formed as a transistor. Therefore, transistors using oxide semiconductors are different from transistors using semiconductors such as silicon. It is possible to significantly reduce the off-current compared to a transistor. Therefore, 1 frame Instead of rewriting the data signal each period, the data signal written in the previous period is retained. This allows for, for example, maintaining the pixel gradation for 1 second or more, preferably 5 seconds or more. It's also possible.

[0250] Furthermore, the semiconductor layer in which the channel is formed as a transistor in the pixel pix is ​​polycrystalline When applying reconversion, etc., the size of the pixel's storage capacity should be increased in advance. It is preferable that the larger the retention capacity, the longer the pixel gradation can be retained. Yes, it is possible. The size of the retaining capacitance depends on the transistors and display elements electrically connected to the retaining capacitance. It should be set according to the current, but for example, the holding capacitance per pixel should be 5fF or more and 5pF or more. F or less, preferably 10 fF or more and 5 pF or less, more preferably 20 fF or more and 1 pF or less. Then, without rewriting the data signal for each frame period, the data written in the previous period is used. The data signal can be held, for example, over a period of several frames or tens of frames. This makes it possible to preserve the tonal range of each pixel.

[0251] <Example of a method for driving the display unit and touch sensor> Figures 16(A) to (D) show, as an example, the touch sensor explained in Figures 14(A) and (B) and When the display unit described in Figures 15(A) and (B) is driven for 1 second, This diagram explains the operation during the frame period. Note that in Figure 16(A), the display unit 1 Frame duration: 16.7ms (frame frequency: 60Hz), 1 frame of touch sensor This shows the case where the duration is 16.7ms (frame frequency: 60Hz).

[0252] In one embodiment of the present invention, the operation of the display unit and the operation of the touch sensor are independent of each other. Therefore, a touch detection period can be set in parallel with the display period. As shown in Figure 16(A) To that end, the frame duration for both the display unit and the touch sensor is set to 16.7ms (frame interval). The frequency can be set to 60Hz. Additionally, the frame frequency of the touch sensor and display unit can be adjusted. The number may be different. For example, as shown in Figure 16(B), the duration of one frame in the display unit may be 8 Set to 0.3ms (frame frequency: 120Hz) and set the duration of one frame for the touch sensor to 1 It can also be set to 6.7ms (frame frequency: 60Hz). Also, although not shown in the diagram, see the table. The frame frequency of the display unit may be set to 33.3 ms (frame frequency: 30 Hz).

[0253] Furthermore, the display unit has a configuration that allows switching the frame frequency, and when displaying moving images, the frame Increase the frequency (for example, 60Hz or higher or 120Hz or higher) when displaying still images. This reduces the frame frequency (for example, below 60Hz, below 30Hz, or below 1Hz). This reduces the power consumption of the display device. Also, the frame circumference of the touch sensor The configuration allows for switching between different frequency bands, with different frame frequencies used in standby mode and when touch is detected. You may make it.

[0254] Furthermore, a display device according to one aspect of the present invention does not rewrite the data signals in the display unit, By retaining the data signal rewritten during that period, the display unit's 1-frame duration is set to 16.7m The period can be longer than s. Therefore, as shown in Figure 16(C), the display unit Set the frame duration to 1 sec (frame frequency: 1 Hz), and the touch sensor's duration is set to 1 sec. The frame duration can also be set to 16.7ms (frame frequency: 60Hz).

[0255] Furthermore, without rewriting the data signals in the display unit, the data signals that were rewritten in the previous period are... For configurations that retain the number, refer to the IDS drive mode described earlier. Oh, regarding the IDS drive mode, the data signal rewriting in the display unit is limited to a specific area. This may be performed as a partial IDS drive mode. Partial IDS drive mode is a mode in which the display unit is The data signal is rewritten only in a specific area, and in other areas, it remains the same as the previous period. This configuration holds the rewritten data signal.

[0256] Furthermore, according to the touch sensor driving method disclosed in this embodiment, the drive shown in Figure 16(C) When performing an action, the touch sensor can be driven continuously. Therefore, as shown in Figure 16(D As shown above, when the touch sensor detects the proximity or contact of the object to be detected, It is also possible to rewrite the data signals of the display unit.

[0257] Here, if the data signal rewriting operation of the display unit is performed during the sensing period of the touch sensor, Noise generated during data signal rewriting is transmitted to the touch sensor, causing the touch sensor to malfunction. This may reduce sensitivity. Therefore, the rewriting period of the data signal in the display unit and It is preferable to drive the touch sensor so that its sensing period is staggered.

[0258] Figure 17(A) shows the rewriting of the data signal of the display unit and the sensing of the touch sensor. This shows an example of the process being performed on both sides. Figure 17(B) also shows the rewriting operation of the data signal on the display unit. This example shows that touch sensor sensing is performed once for every two times this is done. The configuration involves performing touch sensor sensing once for every three or more rewrite operations, without any limitations. That is also acceptable.

[0259] Furthermore, in the transistors applied to pixels, the semiconductor layer in which the channel is formed contains oxide When semiconductors are used, the off-current can be reduced to an extremely low level, thus enabling the rewriting of data signals. The frequency of this can be significantly reduced. Specifically, after rewriting the data signal... This allows for a sufficiently long pause period before the data signal is rewritten. The pause period can be, for example, 0.5 seconds or more, 1 second or more, or 5 seconds or more. The upper limit of the downtime is controlled by the leakage current of the capacitors connected to the transistors and the display elements. While limited, it can be, for example, less than 1 minute, less than 10 minutes, less than 1 hour, or less than 1 day. can.

[0260] Figure 17(C) shows an example where the data signal of the display unit is rewritten at a frequency of once every 5 seconds. In Figure 17(C), the display unit rewrites the data signal and then writes the next data signal. A pause period is provided during which the rewriting operation is suspended before the replacement operation. So, the touch sensor has a frame frequency of iHz (where i is greater than or equal to the frame frequency of the display device, here It can be driven at 0.2Hz or higher. Also, as shown in Figure 17(C), touch Sensor sensing is performed during the idle period, and not during the data signal rewriting period of the display unit. This is preferable because it improves the sensitivity of the touch sensor. Also, see Figure 17(D As shown above, the data signal rewriting of the display unit and the sensing of the touch sensor are performed simultaneously. This allows for the simplification of the driving signals.

[0261] Furthermore, during periods when the data signal rewriting operation of the display unit is not performed, the data signal to the display unit is not rewritten. In addition to stopping the supply of the number, one of the gate drive circuit GD and source drive circuit SD Alternatively, the operation of both may be stopped. Furthermore, the gate drive circuit GD and the source drive circuit S The power supply to one or both of D may be cut off. This will reduce noise. This can further reduce the noise and improve the sensitivity of the touch sensor. This can further reduce power consumption.

[0262] A display device according to one aspect of the present invention has a configuration in which a display unit and a touch sensor are sandwiched between two substrates. Therefore, the distance between the display unit and the touch sensor can be brought extremely close. Noise from the display unit's operation can easily propagate to the touch sensor, reducing the touch sensor's sensitivity. There is a risk that this will happen. By applying the drive method illustrated in this embodiment, it is possible to make it thinner and high This makes it possible to create a display device with a touch sensor that also achieves high detection sensitivity.

[0263] This embodiment can be combined with other embodiments as appropriate.

[0264] (Embodiment 4) In this embodiment, it is used in the semiconductor layer of the transistor disclosed in one aspect of the present invention. This section explains the metal oxides that can be produced. Note that metal oxides are used in the semiconductor layer of transistors. In such cases, the term "metal oxide" may be replaced with "oxide semiconductor."

[0265] Oxide semiconductors can be divided into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors. As for crystalline oxide semiconductors, CAAC-OS (c-axis-aligned crystals Polycrystalline oxide semiconductor, n c-OS(nanocrystalline oxide semiconductor ), pseudo-amorphous oxide semiconductor (a-like OS: amorphous-like o Examples include xide semiconductors and amorphous oxide semiconductors.

[0266] Furthermore, the semiconductor layer of the transistor disclosed in one aspect of the present invention includes CAC-OS(Clo ud-Aligned Composite oxide semiconductor ) may also be used.

[0267] Furthermore, the semiconductor layer of the transistor disclosed in one aspect of the present invention is the non-single-crystal oxide described above. Semiconductors or CAC-OS can be suitably used. Also, non-single-crystal oxide semiconductors and In this regard, nc-OS or CAAC-OS can be suitably used.

[0268] In one aspect of the present invention, it is preferable to use CAC-OS as the semiconductor layer of the transistor. It seems that using CAC-OS gives transistors high electrical characteristics or high reliability. It can be granted.

[0269] The following provides a detailed explanation of CAC-OS.

[0270] CAC-OS or CAC-metal oxide has conductive properties in some parts of the material. In addition, a portion of the material has insulating properties, while the material as a whole has semiconductor properties. Furthermore, CAC-OS or CAC-metal oxide is used in the transistor channel. When used in a region, the conductive function is the ability to conduct electrons (or holes) that act as carriers. Yes, the insulating function is the function of preventing the flow of electrons, which act as carriers. Conductive function and insulating function By having the relationship function and the other function work complementaryly, the switching function (On / The function to turn off the CAC-OS or CAC-metal oxide is added to the CAC-OS or CAC-metal oxide. This is possible. In CAC-OS or CAC-metal oxide, each By separating the functions, it is possible to maximize the performance of both.

[0271] Furthermore, CAC-OS or CAC-metal oxide provides conductive and insulating properties. It has conductive regions. The conductive regions have the conductive function described above, and the insulating regions have the insulating function described above. It has the function of being conductive. Furthermore, within the material, the conductive region and the insulating region are separated by nanoparticles. In some cases, they are separated by a bell. Also, conductive regions and insulating regions are located within the material. It may be unevenly distributed. Also, the conductive region appears blurred around the edges and connected in a cloud-like manner when observed. This may happen.

[0272] Furthermore, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region The marginal region is defined as being between 0.5 nm and 10 nm, preferably between 0.5 nm and 3 nm. These particles may be dispersed in the material at the following sizes.

[0273] Furthermore, CAC-OS or CAC-metal oxide has different band gaps. It is composed of the following components. For example, CAC-OS or CAC-metal oxi de consists of a component with a wide gap due to the insulating region and a component with a wide gap due to the conductive region. It consists of a component having a low gap. In this configuration, when the carrier is flowing... In components with a narrow gap, the carrier mainly flows. A component having a wide gap acts complementaryly with a component having a narrow gap. In conjunction with the components, carriers also flow to components with a wide gap. Therefore, the above C AC-OS or CAC-metal oxide is used in the channel region of the transistor. In this case, the transistor has a high current driving force in its ON state, that is, a large ON current, and High field effect mobility can be obtained.

[0274] In other words, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite) or metal matrix composite (metal m It can also be called an atrix composite.

[0275] CAC-OS, for example, has elements constituting the metal oxide that are between 0.5 nm and 10 nm in size. Preferably, the material is composed of particles that are unevenly distributed in size of 1 nm to 2 nm or in that vicinity. In the following, in metal oxides, one or more metal elements are unevenly distributed. The region containing the metal element is 0.5 nm to 10 nm, preferably 1 nm to 2 nm. A mixture of particles smaller than or near the size of m is also called a mosaic or patchy appearance.

[0276] Furthermore, it is preferable that the metal oxide contains at least indium. In particular, indium and It is preferable to include zinc. In addition to these, aluminum, gallium, and t Rium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, gel Manium, Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Hafnium, Ta It contains one or more elements selected from tungsten, magnesium, etc. It's okay to be there.

[0277] For example, CAC-OS in In-Ga-Zn oxide (among CAC-OS, In-Ga α-Zn oxide may also be specifically referred to as CAC-IGZO. ) is indium oxide (Hereinafter, InO X1 (Let X1 be a real number greater than 0.) ) or indium zinc acid compound (hereinafter referred to as In X2 Zn Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0) Let's assume that...) and gallium oxide (hereinafter referred to as GaO X3 (Let X3 be a real number greater than 0) . ), or gallium zinc oxide (hereinafter referred to as Ga X4 ZnY4 O Z4 (X4, Y4, and Let Z4 be a real number greater than 0. The material separates into parts such as ) and creates a mosaic pattern. , mosaic-like InO X1 , or In X2 Zn Y2 O Z2 However, the structure is uniformly distributed within the membrane. It is in a state of completion (hereinafter also referred to as cloud-based).

[0278] In other words, CAC-OS is GaO X3 The region in which is the main component, and In X2 Zn Y2 O Z2 , or InO X1 A composite metal oxide having a composition in which a region is the main component and a region is mixed. Yes. In this specification, for example, the atomic ratio of In to element M in the first region is The first region is greater than the atomic ratio of In to element M in the second region. Assume that the concentration of In is higher compared to the other region.

[0279] Note that IGZO is a common name and refers to a single compound composed of In, Ga, Zn, and O. There are combinations. A typical example is InGaO3(ZnO). m1 (m1 is a natural number), or In ( 1+x0) Ga (1-x0) O3(ZnO) m0 (-1≦x0≦1, m0 is any number) Examples of crystalline compounds include those that are produced.

[0280] The above crystalline compounds have a single crystal structure, a polycrystalline structure, or CAAC(c-axis al It has an igned crystal structure. Note that the CAAC structure is a structure with multiple IGZO The nanocrystals have c-axis orientation and are linked without orientation in the ab-plane, forming a crystalline structure. ru.

[0281] On the other hand, CAC-OS relates to the material composition of metal oxides. CAC-OS is In, Ga In a material composition containing Zn and O, it was observed that Ga was the main component in part of the nanoparticles. The region is observed to be mo This refers to a configuration in which particles are randomly dispersed in a zic-like manner. Therefore, in CAC-OS, the crystal structure Construction is a secondary element.

[0282] Furthermore, CAC-OS does not include a layered structure of two or more films with different compositions. For example, a structure consisting of two layers, one with In as the main component and the other with Ga as the main component, is included. do not have.

[0283] Note that GaO X3 The region in which is the main component, and In X2 Zn Y2 O Z2 , or InO X1 but In some cases, a clear boundary may not be observable between the principal component region and the surrounding area.

[0284] Note that aluminum, yttrium, copper, vanadium, and beryllium can be used instead of gallium. Boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum Lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium If one or more species selected from Cium, etc. are included, CAC-OS will partially A region observed in the form of nanoparticles mainly composed of the metal element, and a portion of which is mainly composed of In. The region observed as a single particle is randomly dispersed in a mosaic-like manner. cormorant.

[0285] CAC-OS is formed, for example, by sputtering under conditions where the substrate is not intentionally heated. It is possible. Also, when forming CAC-OS by sputtering, the deposition gas and Then, selected from inert gases (typically argon), oxygen gas, and nitrogen gas. You may use one or more of them. Also, the oxygen in relation to the total flow rate of the deposition gas during film formation. A lower gas flow rate ratio is preferable; for example, a flow rate ratio of oxygen gas of 0% or more and less than 30% is preferable. Alternatively, it is preferable to have a value of 0% or more and 10% or less.

[0286] CAC-OS is a type of X-ray diffraction (XRD) measurement method. When measured using the θ / 2θ scan method, which is the only Out-of-plane method, It has the characteristic of not showing a clear peak. In other words, from X-ray diffraction, the measurement area It can be seen that no orientation is observed in the ab-plane direction or the c-axis direction.

[0287] Furthermore, CAC-OS uses an electron beam with a probe diameter of 1 nm (also called a nanobeam electron beam) to illuminate the surface. In the electron diffraction pattern obtained by irradiation, there is a ring-shaped region of high brightness, and Multiple bright spots are observed in the ting region. Therefore, from the electron diffraction pattern, CAC-OS The crystal structure is non-oriented in both the planar and cross-sectional directions (nc(nano-c)). It can be seen that it has a rystal structure.

[0288] For example, in CAC-OS in In-Ga-Zn oxide, energy-dispersive X-rays Spectroscopy (EDX: Energy Dispersive X-ray spectroscopy) GaO X3 The region in which is the main component and InX2 Zn Y2 O Z2 , or InO X1 Regions where it is the main component are unevenly distributed and mixed. It can be confirmed that it has the following structure.

[0289] CAC-OS has a different structure from IGZO compounds in which metal elements are uniformly distributed, It has different properties from ZO compounds. In other words, CAC-OS is GaO X3 These are the main components. The region and In X2 Zn Y2 O Z2 , or InO X1 A region in which is the principal component, and mutually It exhibits phase separation and has a mosaic-like structure in which regions composed primarily of each element are arranged.

[0290] Here, In X2 Zn Y2 O Z2 , or InO X1 The region in which is the main component is GaO X3 Compared to regions where other components are the main components, this region has high conductivity. In other words, In X2 Zn Y2 O Z2 , or InO X1 In the region where the main component is oxide, the carrier flows, Conductivity as a semiconductor is exhibited. Therefore, In X2 Zn Y2 O Z2 , or InO X1 Regions where this is the main component are distributed in a cloud-like manner within the oxide semiconductor, resulting in high field effect transfer. Mobility (μ) can be achieved.

[0291] On the other hand, GaO X3 Regions in which these are the main components are, X2 Zn Y2 O Z2 , or InO X1 This region has higher insulating properties compared to the region where GaO is the main component. X3 etc. A region of a certain size is distributed within the oxide semiconductor, suppressing leakage current and improving switch performance. It can achieve a ching motion.

[0292] Therefore, when CAC-OS is used in semiconductor devices, GaO X3 Equivalent insulating properties, and I n X2 Zn Y2 O Z2 , or InO X1 The conductivity resulting from this works in a complementary manner. This results in a high on-current (I on ), and high field effect mobility (μ) can be achieved. Cut.

[0293] Furthermore, semiconductor devices using CAC-OS have high reliability. Therefore, CAC-OS is... It is ideal for various semiconductor devices, including displays.

[0294] This embodiment can be combined with other embodiments as appropriate.

[0295] (Embodiment 5) This embodiment describes an electronic device according to one aspect of the present invention.

[0296] Examples of electronic devices include television equipment, desktop or notebook computers, etc. Sony Computer, computer monitors, digital cameras, digital video cameras Digital photo frames, mobile phones, portable game consoles, personal digital assistants, audio playback devices Examples include pachinko machines and other large game machines.

[0297] Figure 18(A) shows a notebook personal computer, consisting of a casing 8111 and a display unit 811 2. It includes a keyboard 8113, a pointing device 8114, etc.

[0298] A display device according to one aspect of the present invention can be applied to the display unit 8112. This allows opening This allows us to provide a notebook-type personal computer with a display unit that has a high output ratio.

[0299] Figures 18(B) and (C) show digital signage. An example of a sign is shown. The digital signage consists of a housing 8000, a display unit 8001, and a screen. It has a Pika 8003, etc. Furthermore, it has an LED lamp, an operation key (power switch, or operation key). It may include a switch, connection terminals, various sensors, a microphone, etc. .

[0300] Figure 18(C) shows a digital signage display mounted on a cylindrical column.

[0301] A display device according to one embodiment of the present invention is provided in the display unit 8001 shown in Figures 18(B) and (C). This makes it possible to provide digital signage with a display unit that has a high aperture ratio. It is possible.

[0302] The larger the display unit 8001, the more information can be provided at once. The wider section 8001 is, the more easily it catches people's attention, which can, for example, enhance the effectiveness of advertising. Cut.

[0303] By applying a touch panel to the display unit 8001, images or videos can be displayed on the display unit 8001. It is preferable that it not only displays information but also allows users to operate it intuitively. Furthermore, route information... Or, when used for purposes such as providing traffic information, intuitive operation is possible. It can improve usability.

[0304] Figure 18(D) shows the exterior of the automobile 7900. Figure 18(E) shows the operation of the automobile 7900. The seat is indicated. Automobile 7900 consists of the body 7901, wheels 7902, windshield 7903, It includes lights 7904, fog lamps 7905, etc.

[0305] A display device according to one aspect of the present invention can be used in the display unit of an automobile 7900, for example. Display unit 7910 to 7917 shown in Figure 18(E) displays a display device according to one aspect of the present invention. This can be provided. This makes it possible to provide an automobile having a display unit with a high aperture ratio. It is possible.

[0306] Display units 7910 and 7911 are installed on the windshield 7903 of the automobile 7900. In one aspect of the present invention, the electrodes of the display device are made of a light-transmitting conductive material. By creating this, a display device that allows you to see through to the other side, a so-called see-through display device, can be made. This is possible. If the display device is in a see-through state, it will also be visible when driving the car 7900. It does not interfere with the present invention. Therefore, a display device 10 according to one aspect of the present invention is used in an automobile 7900. It can be installed on the windshield 7903. Furthermore, the display device may contain transistors, etc. If provided, an organic transistor using organic semiconductor material or an oxide semiconductor is used. It is preferable to use a transistor that is transparent to light, such as a transmissive transistor.

[0307] The display unit 7912 is located in the pillar section. The display unit 7913 is located in the dashboard section. It is located in the minute. The display unit 7914 is located in the door section. For example, it is located on the vehicle body. By displaying the image from the captured imaging means on the display unit 7912, the image is obscured by the pillar. It can compensate for the obstructed view. Similarly, in the display unit 7913, the dashboard obstructs the view. It can compensate for the obstructed view, and the display unit 7914 compensates for the view obstructed by the door. This is possible. In other words, by displaying images from an imaging device installed on the outside of the automobile, This can compensate for blind spots and enhance safety. Furthermore, it provides video to fill in the gaps in what is not visible. By displaying the image, safety checks can be performed more naturally and without causing any sense of unease.

[0308] Furthermore, the display unit 7917 is located on the handle. (Display units 7915, 7916) The display unit 7917 displays navigation information, speedometer, tachometer, and distance. It can provide various information such as distance traveled, fuel level, gear status, air conditioning settings, and more. Furthermore, the display items and layout shown on the display unit can be customized to the user's preferences. This information can be modified as appropriate. Furthermore, the above information is also displayed on display units 7910 to 7914. It can be displayed.

[0309] Furthermore, display units 7910 to 7917 can also be used as lighting devices.

[0310] This embodiment can be combined with other embodiments as appropriate. [Explanation of symbols]

[0311] 10 Display device 10A display device 10B display device 11 circuit boards 12 circuit boards 13 Backlight Unit 14 transistors 15 Liquid crystal elements 15A display device 15B Display device 15C Display device 16 Capacitive elements 21 Pixel electrodes 22 Liquid crystal layer 23 Common electrode 25 Conductive layer 26 Insulating layer 27 Conductive layer 28 Conductive layer 29 Connectors 31 Touch Sensor Unit 32 Insulating layer 33 Conductive layer 34 Capacitive elements 40 Click the LCD button 45a light 45b light 45c light 51 circuit boards 61 circuit boards 62 Display section 64 Drive circuit section 65 Wiring 72 FPC 72a FPC 72b FPC 73 IC 73a IC 73b IC 81 scan lines 82 signal line 100 display device 111 Pixel electrodes 112 Common electrode 113 Liquid crystal layer 121 Overcoat 124 electrodes 125 Insulating layer 126 Conductive layer 127 Electrode 128 electrode 130 Polarizing plate 131 Colored layer 132 Light blocking layer 133a Orientation film 133b Alignment film 137 Wiring 138 Wiring 141 Adhesive layer 160 protective board 161 Backlight 162 circuit boards 163 Adhesive layer 164 Adhesive layer 165 Polarizing plate 166 Polarizing plate 167 Adhesive layer 168 Adhesive layer 169 Adhesive layer 201 Transistors 204 Connection part 206 transistors 211 Insulating layer 212 Insulating layer 214 Insulating layer 215 Insulating layer 221 Gate Window 222 Conductive layer 223 Terminal 224 Conductive layer 225 Conductive layer 231 Semiconductor layer 232 Conductive layer 232a Semiconductor layer 242 connectors 242b Connector 251 Conductive layer 261 Insulating layer 262 Conductive layer 262a Semiconductor layer 350 Touch Panel 370 Display device 375 Input device 501 Display elements 506-pixel circuit 521 Electrode 522 Electrode 551 Pulse voltage output circuit 552 Current detection circuit 553 capacity 900 pixels 900s shading area 900t transmission area 902 Wiring 904 Wiring 918 Display area 918B Display area 918G display area 918R display area 7900 automobiles 7901 Car body 7902 Wheel 7903 Windshield 7904 Light 7905 Fog Lights 7910 Display section 7911 Display section 7912 Display section 7913 Display section 7914 Display section 7915 Display section 7916 Display section 7917 Display section 8000 units 8001 Display section 8003 Speaker 8111 enclosure 8112 Display section 8113 Keyboard 8114 Pointing device

Claims

[Claim 1] A first semiconductor layer having a region located on a first insulating layer, A first conductive layer having a region located on the first insulating layer, A second insulating layer having a region located on and in contact with the first semiconductor layer, and a region located on and in contact with the first conductive layer, A second conductive layer having a region located on the second insulating layer and overlapping with the first conductive layer via the second insulating layer, and a region in contact with the first semiconductor layer via a first opening in the second insulating layer, A third insulating layer having a region located on the second insulating layer and a region located on the second conductive layer, A third conductive layer having a region located below the first semiconductor layer, A fourth conductive layer having a region located above the first semiconductor layer, A display device having, The first semiconductor layer has a channel region of a transistor, The second insulating layer has a region that overlaps with the channel region, The third insulating layer has a region that overlaps with the channel region and is in contact with the second insulating layer. The first conductive layer has a region that functions as one electrode of a capacitive element, The second insulating layer has a region that functions as a dielectric layer for the capacitive element, The second conductive layer has a region that functions as the other electrode of the capacitive element, The capacitive element is formed of a first conductive layer, a second insulating layer in contact with the upper surface of the first conductive layer, and a second conductive layer in contact with the upper surface of the second insulating layer. The first semiconductor layer and the first conductive layer each have a metal oxide. The third conductive layer has a region that functions as a scanning line, The third conductive layer has a region that overlaps with the channel region and is made of a metallic material. The fourth conductive layer has a region that overlaps with the channel region and is made of a metallic material. The fourth conductive layer is electrically connected to the third conductive layer. The display device has the function of writing data to the capacitive element and then holding the data by making the transistor non-conductive.

Images