Coated substrate support assembly for substrate processing in a processing chamber

Abstract

Embodiments of the present disclosure generally relate to substrate supports having a surface coating that reduces defect formation and backside metal contamination during substrate processing. The support includes a body having an outer surface and a surface coating formed from a non-metallic or low-metal content material disposed on at least the uppermost surface of the outer surface of the body. In one embodiment, the surface coating includes a two-component coating having an optional first coating layer formed over the entire outer surface of the support.

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure generally relate to an apparatus for supporting a substrate during processing in an electronic device manufacturing process. More particularly, embodiments disclosed herein relate to a substrate support having a surface coating that reduces defect formation and backside metal contamination during substrate processing, and a method of forming the coating.

Background Art

[0002]

[0002] Integrated circuits are formed in and on silicon and other semiconductor substrates. In the case of single crystal silicon, the substrate is made by growing an ingot from a molten silicon bath and then cutting the solidified ingot into a plurality of substrates. Next, an epitaxial silicon layer can be formed on the single crystal silicon substrate in order to form a defect-free silicon layer, which may or may not be doped. Semiconductor devices such as transistors can be fabricated from the epitaxial silicon layer. The electrical characteristics of the formed epitaxial silicon layer are generally superior to those of the single crystal silicon substrate.

[0003]

[0003] The surfaces of single crystal silicon and epitaxial silicon layers are prone to contamination when exposed to the ambient conditions of typical substrate manufacturing equipment. For example, a natural oxide layer may be formed on the single crystal silicon surface prior to deposition of the epitaxial layer due to handling of the substrate and / or exposure to the ambient environment within the substrate processing equipment. In addition, foreign contaminants such as carbon and oxygen species present in the ambient environment may deposit on the single crystal surface. The presence of an oxide layer or contaminants on the single crystal silicon surface adversely affects the quality of the epitaxial layer subsequently formed on the single crystal surface. Therefore, a pre-cleaning process may be performed to remove the oxide layer or contaminants from the single crystal surface. However, in conventional pre-cleaning processes, exposing the substrate to a process gas may cause surface corrosion of the substrate support. In some instances, material by-products resulting from corrosion of the substrate support may contact the substrate, causing defect formation on the substrate and metal contamination on the backside.

[0004]

[0004] Therefore, there is a need in the art to provide an improved substrate support that can withstand the corrosive action of pre-cleaning process gases, which minimizes the formation of substrate defects and metal contamination on the back surface. [Overview of the project]

[0005]

[0005] The disclosure describes supports for supporting a substrate in a processing chamber, and methods for forming a surface coating on the supports. In some embodiments, a method for forming a surface coating on a support in a processing chamber includes depositing a first material on the outer surface of the support to form a first coating layer, the first material including at least one of a metal-containing material or an alloy. The method includes depositing a second material on at least a portion of the first coating layer placed on the uppermost surface of the support to form a second coating layer, the second material being a nonmetal or a material with a low metal content.

[0006]

[0006] In some embodiments, the support includes a body having an outer surface including the uppermost surface. The support also includes a two-component coating disposed on the outer surface of the body. The two-component coating includes a first coating layer disposed over the entire outer surface of the body. The first coating layer includes at least one of metal-containing materials or alloys. The two-component coating includes a second coating layer disposed on the first coating layer. The second coating layer is disposed on at least a portion of the first coating layer which is located on the uppermost surface of the body and extends radially from the center of the body. The second coating layer is a non-metallic or low-metal content coating.

[0007]

[0007] In another embodiment, the support includes a body formed from a material resistant to the process environment of the processing chamber and having an outer surface including an uppermost surface. The support also includes a coating disposed on the outer surface of the body. The coating is disposed on at least a portion of the uppermost surface of the body and extends radially from the center of the body. The coating layer is a non-metallic or low-metallic coating.

[0008]

[0008] In some embodiments, the system includes a processing chamber configured to clean a substrate. The processing chamber includes a chamber body, a lid assembly positioned at the upper end of the chamber body, and a substrate support assembly positioned at least partially within the chamber body and configured to support a substrate within the processing chamber. The lid assembly includes a dual-channel shower head having a first set of channels providing fluid connectivity above and below the plane of the shower head, and a second set of channels providing fluid connectivity to side ports of the chamber body. The substrate support assembly includes a support having a top surface, the top surface extending over a first radial distance from the center of the support. The substrate support assembly includes a stem coupled to the support and a coating positioned on the support. The coating includes a first coating layer positioned over the entire outer surface of the support. The coating includes a second coating layer positioned on top of the first coating layer, the second coating layer extending over at least the substrate support surface of the support, and the second coating layer is a non-metallic or low-metallic coating.

[0009]

[0009] To enable a detailed understanding of the above-described features of the Disclosure, a more specific description of the Disclosure, which has been briefly summarized above, can be obtained by referring to embodiments. Some of these embodiments are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings show only exemplary embodiments and should not be considered to limit the scope of the Disclosure, as other equally valid embodiments are also permitted.

[0010]

[0010] Embodiments of the present disclosure, which are briefly summarized above and described in more detail below, can be understood by referring to exemplary embodiments of the present disclosure shown in the accompanying drawings. However, it should be noted that the accompanying drawings show only typical embodiments of the present disclosure and should not be considered to limit the scope of the present disclosure, as the present disclosure may also permit other equally valid embodiments. [Brief explanation of the drawing]

[0011] [Figure 1A]

[0011] This is a cross-sectional view of a processing chamber according to one embodiment. [Figure 1B]

[0012] Figure 1A is a separated isometric view of the support of a substrate support assembly according to one embodiment. [Figure 1C]

[0013] This is an enlarged cross-sectional view of a portion of the stem in Figure 1A, showing an exemplary surface coating placed on top according to one embodiment. [Figure 1D]

[0014] This is an enlarged cross-sectional view of a portion of the support in Figure 1B, showing an exemplary surface coating placed on top of it according to one embodiment. [Figure 1E]

[0014] This is an enlarged cross-sectional view of a portion of the support in Figure 1B, showing an exemplary surface coating placed on top of it according to one embodiment. [Figure 2]

[0015] This figure shows a method for forming an exemplary surface coating as shown in Figure 1C according to one embodiment. [Figure 3]

[0016] This figure shows a method for forming an exemplary surface coating as shown in Figure 1D according to one embodiment. [Figure 4]

[0017] This figure shows a method for forming the exemplary surface coating shown in Figure 1D via the ENP and EBIAD processes according to one embodiment. [Figure 5]

[0018] This figure shows a method for forming the exemplary surface coating shown in Figure 1D via ENP and ALD processes according to one embodiment. [Figure 6]

[0019] This figure shows a method for forming an exemplary surface coating, as shown in Figure 1D, via an ALD process according to one embodiment. [Figure 7]

[0020] This figure shows a method for forming an exemplary surface coating as shown in Figure 1E according to one embodiment. [Modes for carrying out the invention]

[0012]

[0021] To facilitate understanding, the same reference numerals were used, where possible, to indicate identical elements common to multiple figures. It is assumed that elements and features of one embodiment can be usefully incorporated into other embodiments without further description.

[0013]

[0022] Embodiments disclosed herein relate to a substrate support having a two-component surface coating that reduces defect formation and metal contamination on the back surface during substrate processing, and to a method for forming the coating.

[0014]

[0023] One embodiment disclosed herein provides a substrate support assembly (also called a “pedestal”) having a non-metallic or low-metallic surface coating, in contrast to conventional coatings containing metals. In one embodiment, an optional first coating, capable of filling even the smallest feature size and complex structures, is applied to the entire substrate support assembly to reduce overall surface corrosion of the substrate support assembly. At least the top of the substrate support assembly (e.g., the support) is applied a second coating, which is either free of metal contaminants or contains metal contaminants reduced by atomic percentage, to reduce metal contamination on the back surface of the substrate. In some embodiments, the optional first coating may be omitted, and therefore the second coating may be applied directly to the substrate support. This results in improved coating performance compared to conventional coatings containing metal contaminants.

[0015]

[0024] In some embodiments, the substrate may include a silicon-containing material, and the surface may include a material such as silicon (Si), germanium (Ge), or a silicon-germanium alloy (SiGe). In some examples, the Si, Ge, or SiGe surface may have an oxide layer such as a native oxide layer and contaminants disposed thereon.

[0016] <000,0092>

[0025] Because epitaxial deposition processes are susceptible to effects from oxides and contaminants such as carbon-containing contaminants, surface contamination resulting from exposure to the cleaning chamber environment over several hours can become significant enough to affect the quality of the subsequently formed epitaxial layer. Thus, a pre-cleaning process may be performed to remove the oxide layer or contaminants from the surface. As used herein, the term "pre-cleaning" refers to a process of exposing a substrate (e.g., a semiconductor substrate) to one or more process gases to remove an oxide layer or contaminants from the substrate surface. Here, "pre-cleaning" may also be referred to as "etching" or "selective etching."

[0017]

[0026] In some embodiments, the substrate surface may be cleaned by performing an oxide removal process and a contaminant removal process. In one example, the oxide may be removed from the surface of the substrate using a pre-cleaning process, and contaminants such as carbon-containing contaminants may be removed from the surface of the substrate using a reduction process.

[0018]

[0027] In some examples, the process gas may include reactive gases such as fluorine-containing gases or chlorine-containing gases. In some examples, the process gas may further include vapors. In some examples, the process gas may further include one or more purge gases or carrier gases (e.g., hydrogen, helium, and / or argon). In some examples, the reactive gas may include hydrogen fluoride (e.g., HF), anhydrous hydrogen fluoride (which may be referred to as "AHF"), diatomic fluorine (F2), nitrogen fluoride (e.g., nitrogen trifluoride (NF3)), carbon fluoride (e.g., carbon tetrafluoride (CF4), hexafluoroethane (C2F6), trifluoromethane (CHF3), difluoromethane (CH2F2), octofluoropropane (C3F8), octofluorocyclobutane (C4F8), octofluoro[1-]butane (C4F8), octofluoro[2-]butane (C4F8), or octofluoroisobutylene (C4F8)), sulfur fluoride (e.g., sulfur hexafluoride (SF6)), ammonia (NH3), or combinations thereof.

[0019]

[0028] In some cases, the flow rate of the reactive gas can range from approximately 50 sccm to approximately 500 sccm for a 300 mm substrate. In some cases, the concentration of the reactive gas in the processing chamber (e.g., in contact with the substrate surface) can range from approximately 5% wt / wt to approximately 75% wt / wt of the total process mixed gas, including other components (e.g., vapor, carrier gas, or purge gas).

[0020]

[0029] In some examples, the vapor may include water (e.g., distilled water), primary alcohols (e.g., methyl alcohol, ethyl alcohol, propyl alcohol, butyl alcohol, or isobutyl alcohol), secondary alcohols (e.g., isopropyl alcohol or sec-butyl alcohol), tertiary alcohols (e.g., tert-butyl alcohol), cyclic alcohols (e.g., cyclohexyl alcohol), complex alcohols (e.g., 4-ethyl-3-hexanol), C1 alcohols, C2 alcohols, C3 alcohols, C1-C2 alcohols, C1-C3 alcohols, C1-C4 alcohols, organic acids, or combinations thereof. In some examples, the vapor may increase the reaction rate between the reactive gas and the surface oxide. In some examples, alcohols with fewer carbon atoms may increase the reaction rate more significantly than alcohols with more carbon atoms (e.g., the relative reaction rates may be C1 alcohols > C2 alcohols > C3 alcohols). In some examples, the vapor flow rate may be about 50 sccm to about 500 sccm for a 300 mm substrate. In some cases, the flow ratio of reactive gas to vapor is approximately 10:1 to approximately 1:10. In some cases, the vapor concentration can be approximately 5% wt / wt to approximately 75% wt / wt of the total process mixture gas, including other components (e.g., reactive gas, carrier gas, or purge gas).

[0021]

[0030] During processing, the reactive gas and vapor may be supplied to the processing chamber via different routes (i.e., separately) and mixed after arrival in the processing chamber before contact with the substrate. In some other examples, the reactive gas may be mixed with the vapor and supplied to the processing chamber. The gas mixture may be spatially separated from the processing area where the substrate is located. The term “spatially separated” as used herein may refer to a mixing area separated from the substrate processing area by one or more chamber components, or even to a conduit between the mixing chamber and the substrate processing chamber. In some examples, the processing temperature may refer to the temperature of the mixed process gas in the processing chamber (e.g., the temperature of the mixed process gas in contact with the substrate surface), and may be below approximately 0°C, such as approximately -50°C to approximately 40°C. In some examples, the pressure in the processing chamber may be in the range of approximately 0.5 Torr to approximately 20 Torr.

[0022]

[0031] The pre-cleaning process is nearly conformal and selective to the oxide layer, so that it does not readily etch silicon (e.g., low dielectric constant spacers or other dielectric materials), germanium, or nitride layers, regardless of whether the layer is amorphous, crystalline, or polycrystalline. In some cases, the selectivity of the process gas to oxides compared to silicon or germanium may be at least about 3:1, e.g., about 5:1 or more, e.g., about 10:1 or more. The process gas may also have higher selectivity for oxides compared to nitrides. In some cases, the selectivity of the process gas to oxides compared to nitrides may be at least about 3:1, e.g., about 5:1 or more, e.g., about 10:1 or more, e.g., about 20:1 or more, e.g., about 50:1 or more, e.g., about 80:1 or more, e.g., about 100:1 or more, e.g., about 120:1 or more.

[0023]

[0032] In some cases, thermal energy may be applied to the treated substrate during or after the pre-cleaning process to help remove any by-products generated. In some cases, the thermal energy may be provided through radiative, convective, and / or conductive heat transfer processes that sublimate any unwanted by-products found on the substrate surface.

[0024]

[0033] In some examples, additional processes may be performed to remove carbon contaminants or other contaminants from the substrate surface. In some examples, contaminant removal may be performed before or after the pre-cleaning process. In some examples, contaminant removal may include plasma treatment performed in a plasma cleaning chamber. The plasma treatment may use a plasma formed from a gas containing hydrogen (H2), helium (He), ammonia (NH3), a fluorine-containing gas, or a combination thereof. The plasma may be inductively coupled or capacitively coupled, the plasma may be formed by a microwave source in the processing chamber, or the plasma may be formed by a remote plasma source.

[0025]

[0034] In some cases, an epitaxial layer can be formed on the surface of the substrate. If the substrate surface is pre-cleaned as described above, it will not uniformly contain oxides and contaminants, thereby improving the quality of the subsequent layer formed on the substrate surface. An exemplary processing chamber that can be used to perform the epitaxial deposition process is available from Applied Materials, Inc. in Santa Clara, California. TM This is an EPI chamber. Chambers from other manufacturers may also be used.

[0026]

[0035] Figure 1A is a cross-sectional view of a processing chamber 100 according to one embodiment. The processing chamber 100 is configured to perform a pre-cleaning process. In one example, the processing chamber 100 is made of Siconi, which is available from Applied Materials in Santa Clara, California. TM Or Selectra TMIt may be a chamber. The processing chamber 100 generally includes a chamber body 102, a lid assembly 104, and a support assembly 106. The lid assembly 104 is located at the upper end of the chamber body 102, and the substrate support assembly 106 is located at least partially inside the chamber body 102. A vacuum system is used to remove gas from the processing chamber 100. The vacuum system includes a vacuum pump 108 connected to a vacuum port 110 located inside the chamber body 102. A pumping ring 122 is located inside the chamber body 102. The pumping ring 122 has a number of exhaust ports 126 that provide a fluid connection between the inside of the processing chamber 100 and the vacuum port 110, from which gas is exhausted.

[0027]

[0036] The lid assembly 104 includes a plurality of laminated components configured to supply gas to the processing area 112 within the chamber 100. The lid assembly 104 is connected to a first gas source 114 and a second gas source 116. Gas from the first gas source 114 is introduced into the lid assembly 104 through an upper port 118. Gas from the second gas source 116 is introduced into the lid assembly 104 through a side port 120. In some examples, the first gas source 114 may supply at least a first portion of the process gas (e.g., a reactive gas). In some examples, the second gas source 116 may supply at least a second portion of the process gas (e.g., vapor). In some examples, one or more purge gases or carrier gases may also be delivered to the processing area 112 from the first gas source 114, the second gas source 116, or another gas source.

[0028]

[0037] The lid assembly 104 generally includes a showerhead 124 positioned above the processing area 112 through which gas from the first gas source 114 is introduced into the processing area 112. The showerhead 124 may include one or more additional plates (e.g., blocker plates, face plates) positioned on top of the plate shown in Figure 1A. Each plate of the showerhead 124 may include a number of openings connecting the gas areas above and below each plate. In some examples, the showerhead 124 may be heated. In some examples, gas may be mixed in or on the showerhead 124 during heating. In one example, the showerhead 124 may be heated to about 190°C while the substrate being processed is about 10°C.

[0029]

[0038] In the example shown in Figure 1A, the showerhead 124 is a dual-channel showerhead having a first set of channels 128 and a second set of channels 130. The first set of channels 128 provides a fluid connection above and below the plane of the showerhead 124 for gas from the upper port 118 to enter the processing area 112. The second set of channels 130 provides a fluid connection with the side port 120 for gas from the second gas source 116 to enter the processing area 112. A dual-channel showerhead may be particularly advantageous for improving the mixing of different gases from the first gas source 114 and the second gas source 116.

[0030]

[0039] The substrate support assembly 106 (also called the “pedestal”) includes a support 132 (also called the “pack”) that supports the substrate 101 on top during processing, and a stem 136 coupled to the support 132. The substrate support assembly 106 includes a surface coating, which is detailed below with respect to Figures 1C to 1E. In some examples, the support 132 is modular and can be easily replaced with another coated component. Therefore, if only the coating on the support 132 is damaged, replacement of the entire substrate support assembly 106 can be avoided.

[0031]

[0040] The support 132 includes an uppermost surface having a flat or substantially flat substrate support surface 133 (also called the “substrate support area” or “substrate contact surface” of the support 132). Referring to Figure 1B, the substrate support surface 133 is the area beneath and / or in contact with the substrate 101 (shown as a phantom in Figure 1B). In some examples, the substrate support surface 133 may extend from the center C1 of the support 132 to a radial distance R1. As shown in Figure 1B, the outer periphery of the substrate 101 matches the size of the substrate support surface 133, although in some examples, the substrate 101 may extend beyond the substrate support surface 133. The substrate support surface 133 includes several surface features formed within it (such as the channel 135, port 137, and recess 139 shown in Figure 1B), and these surface features may be difficult to coat using conventional one-component coating agents due to their small size and / or complex structure. Advantageously, in one embodiment, the two-component coating described herein can substantially cover the entire outer surface of each surface feature, and thus protect even the smallest feature size from corrosion. In some examples, the two-component coating can fill feature sizes having a critical dimension of about 30 μm or less. Advantageously, the two-component coating described herein can fill high aspect ratio features having an aspect ratio of about 5:1 or greater, for example, about 10:1 or greater, for example, about 20:1 or greater, thereby improving the protection of high aspect ratio features from corrosion.

[0032]

[0041] As shown in Figure 1A, the support 132 includes two independent temperature control zones (referred to as "dual zones") that control the substrate temperature for uniformity and control of processing from the center to the edges. In the example shown in Figure 1A, the support 132 has an inner zone 132i and an outer zone 132o surrounding the inner zone 132i. As shown in Figure 1B, the inner zone 132i and the outer zone 132o are radially separated from each other by a circumferential recess 139. In some other examples, the support 132 may have two or more independent temperature control zones (referred to as "multi-zones").

[0033]

[0042] The support 132 can be coupled to the actuator 134 by a stem 136 extending through a centrally located opening formed in the bottom of the chamber body 102. The actuator 134 is flexibly sealed to the chamber body 102 by a bellows 138 that prevents vacuum leakage around the stem 136. The actuator 134 allows the support 132 to move vertically between a processing position and a loading position within the chamber body 102. The loading position is slightly below the substrate opening 140 formed in the side wall of the chamber body 102.

[0034]

[0043] The processing chamber 100 also includes a cryogenic kit 142 for lowering the temperature of the substrate being processed, which can improve the selectivity of oxide removal (e.g., removal of native oxides) in particular compared to low dielectric constant materials and other materials such as silicon nitride (e.g., SiN). In some examples, the temperature of the substrate being processed and / or the temperature of the support 132 can be lowered to about -30°C to about 10°C. The cryogenic kit 142 provides the support 132 with a continuous flow of cryogenic coolant to cool the support 132 to a desired temperature. In some examples, the cryogenic coolant may include a perfluoroinert polyether fluid (e.g., Galden® fluid). In the example shown in Figure 1A, the cryogenic coolant is provided to the inner zone 132i and the side zone 132o of the support 132 through an inner coolant channel 144i and an outer coolant channel 144o, respectively. The cooling channels are schematically depicted in Figure 1A, but may be in a different configuration than shown. For example, each cooling channel may be in the form of a loop.

[0035]

[0044] A system controller 150, such as a programmable computer, is coupled to the processing chamber 100 to control the processing chamber 100 or its components. For example, the system controller 150 may control the processing in the processing chamber 100 by using direct control of the substrate support assembly 106, the vacuum pump 108, the first gas source 114, the second gas source 116, the actuator 134 and / or the cryogenic kit 142, or by using indirect control of other controllers associated with them. During processing, the system controller 150 also enables data collection and feedback from each component to coordinate the processing within the processing chamber 100.

[0036]

[0045] The system controller 150 includes a programmable central processing unit (CPU) 152 that operates together with memory 154 (e.g., non-volatile memory) and support circuitry 156. The support circuitry 156 conventionally includes caches, clock circuits, input / output subsystems, power supplies, and combinations thereof, which are coupled to the CPU 152 and various components of the processing chamber 100.

[0037]

[0046] In some embodiments, the CPU 152 is one of any form of general-purpose computer processor used in an industrial environment for controlling various monitoring system components and subprocessors (such as a programmable logic controller (PLC)). The memory 154 coupled to the CPU 152 is non-temporary and is typically one or more readily available memories such as random access memory (RAM), read-only memory (ROM), a floppy disk drive, a hard disk, or any other form of local or remote digital storage.

[0038]

[0047] Here, memory 154 is in the form of a computer-readable storage medium (e.g., non-volatile memory) containing instructions, which, when executed by the CPU 152, facilitate processing in the processing chamber 100. The instructions in memory 154 are in the form of a program product (e.g., middleware application, device software application, etc.) that implements the method of the present disclosure. The program code may be adapted to one of several different programming languages. In one example, the present disclosure may be implemented as a program product stored on a computer-readable storage medium used with a computer system. One or more programs in the program product define the function of the embodiment (including the method described herein).

[0039]

[0048] Exemplary computer-readable storage media include, but are not limited to, (i) non-writable storage media on which information is permanently stored (e.g., read-only memory devices in a computer, such as a CD-ROM drive, flash memory, ROM chip, or CD-ROM disk readable by any type of solid-state non-volatile semiconductor memory), and (ii) writable storage media on which modifiable information is stored (e.g., floppy disks in a diskette drive or hard disk drive, or any type of solid-state random-access semiconductor memory). Such computer-readable storage media constitute embodiments of the Disclosure if they contain computer-readable instructions that direct the functions of the methods described herein.

[0040]

[0049] Figure 1C is an enlarged cross-sectional view of a portion of the stem 136 of Figure 1A, showing an exemplary surface coating placed on top of it according to one embodiment. The stem 136 includes a base layer 160 having an outer surface 162. "Outer surface" may refer to the surface that is exposed before the surface coating is placed on top of it. In one embodiment, the stem 136 includes a first coating layer 164 placed on top of the outer surface 162. The first coating layer 164 has an outer surface 166. As shown, the first coating layer 164 is in direct contact with the outer surface 162. However, in some other examples, one or more additional layers may be placed between the base layer 160 and the first coating layer 164. Although only a portion of the stem 136 is shown in Figure 1C, in some examples the first coating layer 164 may be placed over the entire substrate support assembly 106, including the corresponding outer surfaces of the stem 136 and the support 132. In some examples, and as will be further described below, the first coating layer 164 may be placed over the entire support 132, or over one or more individual surfaces or portions of the support 132. For example, the first coating layer 164 may be placed over one or more surfaces of the support 132 (shown in Figure 1B), such as on the substrate support surface 133, on the area of ​​the support 132 outside the substrate support surface 133 (e.g., on the upward surface 141 surrounding the substrate support surface 133, or around the side surface 143 of the support 132), or a combination thereof. In some examples, the first coating layer 164 may be placed over the entire upper surface of the support 132, including the substrate support surface 133 and the upward surface 141.

[0041]

[0050] In some examples, the base layer 160 may include metals such as aluminum, nickel (e.g., Ni100 or Ni200), nickel alloys (e.g., C22, IN625, C276) or other metal alloys, ceramics such as aluminum nitride or aluminum oxide, mild steel alloys, stainless steel alloys, or combinations thereof.

[0042]

[0051] In some examples, the first coating layer 164 may include a metal-containing material or alloy. In one example, the first coating layer 164 includes a nickel-phosphorus alloy formed by electroless nickel plating (ENP). In some examples, the ENP coating may be either high-phosphate ENP or low-phosphate ENP. In some examples, the thickness of the ENP coating may be about 10 μm to about 50 μm, for example, about 10 μm to about 20 μm, about 20 μm to about 30 μm, about 30 μm to about 40 μm, or about 40 μm to about 50 μm. In one example, the thickness of the ENP coating may be about 25 μm. In some other examples, the first coating layer 164 may include electrolytic nickel plating.

[0043]

[0052] In one embodiment, if the stem 136 including the base layer 160 is formed from a material resistant to the process environment, the first coating layer 164 on the stem 136 may be omitted. In some examples, if the base layer 160 of the stem 136 contains a metal such as nickel or a nickel alloy, the formation of the first coating layer 164 on the stem 136 may be omitted.

[0044]

[0053] In some other examples, the first coating layer 164 may be deposited using atomic layer deposition (ALD). In some examples, the first coating layer 164 may include nickel, noble metals (e.g., platinum or gold), aluminum oxide (e.g., Al2O3), yttrium oxide (e.g., Y2O3), yttrium oxyfluoride (e.g., YOF), yttrium fluoride (e.g., YF3), nickel fluoride (e.g., NiF2), magnesium fluoride (e.g., MgF2), silicon dioxide (e.g., SiO2), or a combination thereof. In some examples, the thickness of the first coating layer 164 deposited using ALD may range from about 5 nm to about 300 nm, for example, about 5 nm to about 75 nm, about 75 nm to about 150 nm, about 150 nm to about 225 nm, or about 225 nm to about 300 nm. In one example, the thickness of the first coating layer 164 deposited using ALD may be about 50 nm.

[0045]

[0054] In some examples, the first coating layer 164 may be a conformal layer, which can generally conform to the contour of the base layer 160. The term “conformal” may refer to a coating having a thickness within ±5% of the nominal coating thickness. In some examples, the first coating layer 164 may have a substantially uniform thickness across the entire outer surface 162. In some examples, during application, the first coating layer 164 may have a fluidity parameter that allows the coating to fill even the smallest features formed on the outer surface 162. For example, the first coating layer 164 can fill feature sizes having critical dimensions in the range of about 30 μm to about 50 μm.

[0046]

[0055] In some examples, the thickness of the first coating layer 164 may be in the range of approximately 0.1 μm to approximately 50 μm, or approximately 5 nm to approximately 300 nm. In some examples, the average surface roughness (Ra) of the first coating layer 164 may be in the range of approximately 2 μin to approximately 64 μin, for example, approximately 20 μin. In some examples, the first coating layer 164 may have resistance to exposure to 50 mol% liquid hydrochloric acid (HCl) for at least 24 hours without pitting corrosion or discoloration. In some examples, the first coating layer 164 may have resistance to HCl vapor for at least 22 days without pitting corrosion or discoloration.

[0047]

[0056] Figures 1D and 1E are enlarged cross-sectional views of a portion of the support 132 of Figure 1B, showing an exemplary surface coating placed on top of it according to one embodiment. The support 132 includes a base layer 170 having an outer surface 172. In one embodiment, as shown in Figure 1D, the support 132 may have an arbitrary first coating layer 174 placed on top of the outer surface 172. The first coating layer 174 has an outer surface 176. As shown, the first coating layer 174 is in direct contact with the outer surface 172. However, in some other examples, one or more additional layers may be placed between the base layer 170 and the first coating layer 174.

[0048]

[0057] In some examples, the base layer 170 may include a metal such as aluminum, stainless steel, nickel, nickel alloy or other metal alloy, a ceramic such as aluminum nitride or aluminum oxide, or a combination thereof. In some examples, the base layer 170 may be formed from the same material as the base layer 160. In some examples, the support 132 may be formed from a bulk metal-containing material such that the material used to form the base layer 170 may be the same material used to form the support 132.

[0049]

[0058] In some examples, any first coating layer 174 may include one or more embodiments of the first coating layer 164 described above. In some examples, the first coating layer 174 may be the same as the first coating layer 164 in Figure 1C. In some examples, the first coating layer 174 may include nickel, precious metals (e.g., platinum or gold), aluminum oxide (e.g., Al2O3), yttrium oxide (e.g., Y2O3), yttrium oxyfluoride (e.g., YOF), yttrium fluoride (e.g., YF3), nickel fluoride (e.g., NiF2), magnesium fluoride (e.g., MgF2), silicon dioxide (e.g., SiO2), or a combination thereof. Although not shown in Figure 1D, the first coating layer 174 may cover substantially the entire outer surface 172 of each surface feature (such as the channel 135, port 137, and recess 139 shown in Figure 1B) formed within the substrate support area of ​​the base layer 170. In one embodiment, when the first coating layer 174 is deposited using ENP or ALD, the first coating layer 174 may be deposited over the entire outer surface 172 of the base layer 170 of the support 132.

[0050]

[0059] In one embodiment, the support 132 includes a second coating layer 178 positioned on the outer surface 176 of a first coating layer 174. The second coating layer 178 has an outer surface 180. As shown, the second coating layer 178 is in direct contact with the outer surface 176. However, in some other examples, one or more additional layers may be positioned between the first coating layer 174 and the second coating layer 178.

[0051]

[0060] In one example, as shown in Figure 1D, the support 132 may be formed such that both an arbitrary first coating layer 174 and a second coating layer 178 are placed on the support 132. In one embodiment, the second coating layer 178 may be formed over the entire outer surface 176 of the first coating layer 174. In another embodiment, the second coating layer 178 may be formed only on a portion of the first coating layer 174 that is placed on the substrate support surface 133 of the support 132.

[0052]

[0061] In another example, as shown in Figure 1E, the support 132 may be formed such that an optional first coating layer 174 is omitted, and instead a second coating layer 178 is placed directly on the base layer 170 of the support 132. In such an example, the first coating layer 174 is unnecessary if the support 132 is formed from a material resistant to the process environment, as will be discussed further later. Instead, the second coating layer 178 is in direct contact with the outer surface 172 of the base layer 170. In some other examples, one or more additional layers may be placed between the base layer 170 and the second coating layer 178.

[0053]

[0062] A portion of the support 132 shown in Figures 1D and 1E corresponds to the substrate support surface 133. However, in some examples, the second coating layer 178 may be applied to an area outside the substrate support surface 133, as described above with respect to Figure 1D.

[0054]

[0063] In some examples, the second coating layer 178 may include a material that does not contain metallic contaminants (also called "nonmetallic" or "metal-free"). In some examples, the nonmetallic material may include a material having a metal concentration of about 2000 ppm or less. In another embodiment, the second coating layer 178 may include a material with a reduced atomic percentage of metallic contaminants (also called "low metal content"), such as in the range of about 10 atomic (at)% to about 50 at.%. In some examples, the second coating layer 178 may be deposited using chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), atomic layer deposition (ALD), plasma-enhanced ALD (PEALD), electron beam ion-assisted deposition (EBIAD), magnetron sputtering (MS), thermal evaporation, cathode arc deposition, or air plasma spray. In one embodiment, when the second coating layer 178 is deposited using ALD, the second coating layer 178 may be deposited over the entire outer surface of the preceding layer below it. In some cases, the second coating layer 178 may be an amorphous film.

[0055]

[0064] In some other examples, the second coating layer 178 may be or contain yttrium oxyfluoride (YOF). In some examples, the YOF coating may completely cover the substrate surface. In some examples, the individual concentrations of yttrium, oxygen, and fluoride atoms in the YOF coating may be in the range of about 10 atoms (at.)% to about 50 at.%. In one example, the concentrations of the Y components are approximately equal (i.e., about 33 at.% Y atoms, 33 at.% O atoms, and 33 at.% F atoms). Generally, the YOF coatings described above are more resistant to etching (e.g., when exposed to chemical reactions in an AHF / water process) compared to other coatings such as silicon carbide. In some examples using 4 wt% to 25 wt% HF in liquid water, the etching rate of the YOF coating may be less than about 0.5 angstroms / min (Å / min). In some other examples, the etching rate of the YOF coating may be less than approximately 0.15 Å / min in a process environment suited to the application (for example, using the processing chamber 100 described above with HF and steam at a temperature below approximately 0°C).

[0056]

[0065] In some other examples, the second coating layer 178 may be or may contain yttrium fluoride (YF3). In some examples, the thickness of the YF3 coating may be about 100 nm to about 500 nm, e.g., about 100 nm to about 200 nm, about 200 nm to about 300 nm, about 300 nm to about 400 nm, or about 400 nm to about 500 nm. In other examples, the thickness of the YF3 coating may be about 1 μm to about 11 μm, e.g., about 1 to about 3 μm, about 3 to about 5 μm, about 5 μm to about 7 μm, about 7 μm to about 9 μm, or about 9 μm to about 11 μm. In some examples, the YF3 coating may completely cover the substrate surface. In some examples, the individual concentrations of yttrium atoms and fluorine atoms in the YF3 coating may be in the range of about 10 atoms (at.)% to about 80 at.%. In one example, the concentrations of each component may be approximately 25 at.% of Y atoms and 75 at.% of F atoms. Generally, the YF3 coating described above is more resistant to etching (e.g., when exposed to the chemical reactions of the AHF / water process) compared to other coatings such as silicon carbide. In some examples using 4 wt% to 25 wt% HF in liquid water, the etching rate of the YF3 coating may be less than approximately 0.5 angstroms / min (Å / min). In some other examples, in a process environment appropriate to the application (e.g., using the processing chamber 100 described above with HF and steam at a temperature below approximately 0°C), the etching rate of the YF3 coating may be less than approximately 0.15 Å / min.

[0057]

[0066] In some other examples, the second coating layer 178 may be or contain yttrium oxide (Y2O3). In some examples, the thickness of the Y2O3 coating may be about 100 nm to about 500 nm, for example, about 100 nm to about 200 nm, about 200 nm to about 300 nm, about 300 nm to about 400 nm, or about 400 nm to about 500 nm. In some examples, the Y2O3 coating may completely cover the substrate surface. In some examples, the individual concentrations of yttrium and oxygen atoms in the Y2O3 coating may be in the range of about 10 atoms (at.)% to about 70 at.%. In one example, the concentration of each component may be about 40 at.% of Y atoms and 60 at.% of O atoms.

[0058]

[0067] In some examples, the second coating layer 178 formed from YOF, YF3, and Y2O3 may be deposited using ALD or EBIAD. In some examples, the thickness of the second coating layer 178 deposited using ALD may be about 100 nm to about 500 nm, for example, about 100 nm to about 200 nm, about 200 nm to about 300 nm, about 300 nm to about 400 nm, or about 400 nm to about 500 nm. In one example, the thickness of the second coating layer 178 deposited using ALD may be between about 400 nm and 450 nm. In another example, the thickness of the second coating layer 178 deposited using EBIAD may be about 50 nm to about 15 μm, for example, about 50 nm to about 1000 nm, about 1 μm to about 5 μm, about 5 μm to about 10 μm, or about 10 μm to about 15 μm. For example, the thickness of the second coating layer 178 deposited using EBIAD may be between approximately 50 μm.

[0059]

[0068] In one embodiment, the support 132 may include a bulk aluminum pack. In such an embodiment, a first coating layer 174 is required to prevent corrosion of the support 132. Therefore, as shown in Figure 1D, the first coating layer 174 is deposited on the outer surface 172 of the base layer 170 via ENP or ALD. By forming the first coating layer 174 from ENP or ALD, conformal coverage over the entire support 132 on the outer surface 172 of the base layer 170 can be ensured. In one example, the first coating layer 174 may include a nickel-phosphorus alloy formed via ENP and deposited over the entire outer surface 172 of the base layer 170. In such an example, after the first coating layer 174 is deposited via ENP, a second coating layer 178 may be deposited on top of the first coating layer 174 via ALD or EBIAD. In another example, the first coating layer 174 may include Al2O3 deposited over the entire outer surface 172 of the base layer 170 via ALD. In such an example, after the first coating layer 174 is deposited via ALD, the second coating layer 178 may be deposited on top of the first coating layer 174 via ALD.

[0060]

[0069] In another embodiment, the support 132 may include a material resistant to process environments, such as bulk nickel or nickel alloy (e.g., Ni100 or Ni200) pack. In such an embodiment, the use of the first coating layer 174 may be omitted, and instead, a second coating layer 178 may be deposited directly on the base layer 170 of the support 132. In some examples, the second coating layer 178 may be placed on the outer surface 172 of the base layer 170 via EBIAD or ALD.

[0061]

[0070] In some examples, the second coating layer 178 has a high bulk density corresponding to a low void volume. In some examples, the second coating layer 178 may have a bulk density as a percentage of the volume mass density of the coating material, such as about 90% or more, e.g., about 95% or more, e.g., about 99% or more, e.g., about 100%. In some examples, the thickness of the second coating layer 178 may be in the range of about 100 nm to about 40 μm, e.g., Therefore, in at least some embodiments, CVD is considered a particularly advantageous process compared to ALD for forming the second coating layer 178. In some examples, the mean surface roughness (Ra) of the second coating layer 178 may be in the range of about 5 μin to about 20 μin. In some examples, the electrical resistivity of the second coating layer 178 is about 10 7 From Ohm-cm to approximately 10 8 It could be Ohm-cm.

[0062]

[0071] Advantageously, as shown in Figure 1D, when the substrate support surface 133 of the support 132 includes a non-metallic or low-metallic coating, metallic contamination of the substrate back surface is reduced or prevented compared to conventional base layer surface materials that may contain metallic elements such as aluminum oxide (e.g., Al2O3). A portion of the support 132 shown in Figure 1D corresponds to the substrate support surface 133. In some examples, the second coating layer 178 may be placed only on the substrate support surface 133. In other words, the second coating layer 178 may extend from the center C1 of the support 132 for a radial distance approximately equal to the first radial distance R1. In some other examples, the second coating layer 178 may be applied to an area of ​​the support 132 outside the substrate support surface 133. For example, the second coating layer 178 may be applied to the entire upper surface of the support 132, including the upward surface 141 (shown in Figure 1B) surrounding the substrate support surface 133. In some examples, the sides 143 of the support 132 (e.g., vertical sides) do not include the second coating layer 178. In some other examples, the second coating layer 178 may be applied around the sides 143 of the support 132 (shown in Figure 1B). However, portions of the second coating layer 178 placed on vertical surfaces such as the sides 143 of the support 132 may degrade the overall coating quality. Therefore, it may be advantageous not to coat the sides 143. In some examples, the second coating layer 178 may be placed over the entire substrate support assembly 106, including the corresponding outer surfaces of the stem 136 and the support 132. In some examples, the stem 136 does not have the second coating layer 178. Applying the second coating layer 178 to the stem 136 can be particularly difficult. Therefore, it may be advantageous not to coat the stem 136.

[0063]

[0072] In some examples, a coated substrate support assembly 106 (e.g., shown in Figures 1C–1D) may have increased thermal conductivity compared to the corresponding uncoated support. Embodiments of coatings disclosed herein may be particularly advantageous, at least in part, for improving the thermal properties of supports formed from aluminum, because uncoated aluminum-based supports have limited control over substrate temperature compared to materials with higher thermal conductivity.

[0064]

[0073] Figure 2 shows a method 200 for forming the exemplary surface coating of Figure 1C according to one embodiment. In step 202, an optional first surface treatment is applied to the outer surface 162 of the base layer 160. In some examples, the first surface treatment may include a cleaning process to remove oxides and trace metals with uniform density. In some examples, the first surface treatment may include O2 plasma cleaning. In some examples, the cleaning process may include the pre-cleaning process described above, which may be carried out in the processing chamber shown in Figure 1A. In some other examples, the cleaning process may use a milder process chemistry compared to the pre-cleaning process, and milder process conditions may be more suitable for cleaning unfinished surfaces of substrate support assemblies (e.g., uncoated surfaces or surfaces coated with only a single coating layer).

[0065]

[0074] In step 204, a first material precursor is deposited on the base layer 160 to form a first coating layer 164. In some examples, the first material precursor may be deposited using ENP or electrolytic nickel plating, among other processes suitable for depositing the material forming the first coating layer 164 as described above. In some examples, the portion of the substrate support assembly 106 to be coated (e.g., the support 132 and / or stem 136) is immersed in a bath containing the first material precursor.

[0066]

[0075] In step 206, an optional second surface treatment is applied to the outer surface 166 of the first coating layer 164. In some examples, the second surface treatment may include one or more of the cleaning processes described above with respect to step 202.

[0067]

[0076] Figure 3 shows a method 300 for forming the exemplary surface coating of Figure 1D according to one embodiment. In step 302, an optional first surface treatment is applied to the outer surface 172 of the base layer 170. In some examples, the first surface treatment may include one or more of the cleaning processes described above with respect to step 202.

[0068]

[0077] In step 304, depending on the material of the base layer 170, a first material precursor is optionally deposited on the base layer 170 to form the first coating layer 174. In some examples, the first material precursor may be deposited using ENP or ALD, among other processes suitable for depositing the material that forms the first coating layer 164 as described above.

[0069]

[0078] In step 306, an optional second surface treatment is applied to the outer surface 176 of the first coating layer 174. In some examples, the second surface treatment may include one or more of the cleaning processes described above with respect to step 202. In some examples, the second surface treatment may include reactive ion etching. In some examples, the second surface treatment may include reverse transfer arc plasma cleaning.

[0070]

[0079] In step 308, the second material precursor is deposited on an arbitrary first coating layer 174 (if formed on a base layer 170) to form the second coating layer 178. In some examples, if the first coating layer 174 is not formed, the second material precursor is deposited directly on the base layer 170. In some examples, the second material precursor may be deposited using air plasma spray, EBIAD, CVD, PECVD, ALD, or PEALD.

[0071]

[0080] In step 310, an optional third surface treatment is applied to the outer surface 180 of the second coating layer 178. In some examples, the third surface treatment may include one or more of the cleaning processes described above with respect to step 202.

[0072]

[0081] Figure 4 shows a method 400 according to one embodiment for forming the exemplary surface coating of Figure 1D via ENP and EBIAD when the support 132 is formed from a bulk aluminum pack. In step 402, an optional first surface treatment is applied to the outer surface 172 of the base layer 170. In some examples, the first surface treatment may include one or more of the cleaning processes described above with respect to step 202.

[0073]

[0082] In step 404, a first material precursor is deposited on the base layer 170 to form a first coating layer 174. In one embodiment, the first material precursor is a nickel-phosphorus alloy deposited using ENP to form the first coating layer 174. In one embodiment, the first coating layer 174 of ENP is formed over the entire surface of the base layer 170.

[0074]

[0083] In step 406, an optional second surface treatment is applied to the outer surface 176 of the first coating layer 174. In some examples, the second surface treatment may include one or more of the cleaning processes described above with respect to step 202. In some examples, the second surface treatment may include reactive ion etching. In some examples, the second surface treatment may include reverse transfer arc plasma cleaning.

[0075]

[0084] In step 408, a second material precursor is deposited on the first coating layer 174 via EBIAD on at least the substrate support surface 133 to form a second coating layer 178. In such an example, the second coating layer 178 may extend from C1 to at least R1 on the support 132. The second coating layer 178 may be formed from a material containing YOF, YF3, or Y2O3. In another embodiment, the second coating layer 178 may be formed over the entire outer surface 176 of the first coating layer 174.

[0076]

[0085] In step 410, an optional third surface treatment is applied to the outer surface 180 of the second coating layer 178. In some examples, the third surface treatment may include one or more of the cleaning processes described above with respect to step 202.

[0077]

[0086] Figure 5 shows a method 500 according to one embodiment for forming the exemplary surface coating of Figure 1D via ENP and ALD when the support 132 is formed from a bulk aluminum pack. In step 502, an optional first surface treatment is applied to the outer surface 172 of the base layer 170. In some examples, the first surface treatment may include one or more of the cleaning processes described above with respect to step 202.

[0078]

[0087] In step 504, a first material precursor is deposited on the base layer 170 to form a first coating layer 174. In one embodiment, the first material precursor is a nickel-phosphorus alloy deposited using ENP to form the first coating layer 174. In one embodiment, the first coating layer 174 of ENP is formed over the entire surface of the base layer 170.

[0079]

[0088] In step 506, an optional second surface treatment is applied to the outer surface 176 of the first coating layer 174. In some examples, the second surface treatment may include one or more of the cleaning processes described above with respect to step 202. In some examples, the second surface treatment may include reactive ion etching. In some examples, the second surface treatment may include reverse transfer arc plasma cleaning.

[0080]

[0089] In step 508, a second material precursor is deposited over the entire outer surface 176 of the first coating layer 174 via ALD to form a second coating layer 178. The second coating layer 178 may be formed from a material containing YOF, YF3, or Y2O3.

[0081]

[0090] In step 510, an optional third surface treatment is applied to the outer surface 180 of the second coating layer 178. In some examples, the third surface treatment may include one or more of the cleaning processes described above with respect to step 202.

[0082]

[0091] Figure 6 shows a method 600 according to one embodiment for forming the exemplary surface coating of Figure 1D via ALD when the support 132 is formed from a bulk aluminum pack. In step 602, an optional first surface treatment is applied to the outer surface 172 of the base layer 170. In some examples, the first surface treatment may include one or more of the cleaning processes described above with respect to step 202.

[0083]

[0092] In step 604, a first material precursor containing Al2O3 is deposited on the base layer 170 of the support 132 to form a first coating layer 174. In one embodiment, the Al2O3 precursor is deposited over the entire outer surface 172 of the base layer 170 via ALD to form the first coating layer 174.

[0084]

[0093] In step 606, an optional second surface treatment is applied to the outer surface 176 of the first coating layer 174. In some examples, the second surface treatment may include one or more of the cleaning processes described above with respect to step 202. In some examples, the second surface treatment may include reactive ion etching. In some examples, the second surface treatment may include reverse transfer arc plasma cleaning.

[0085]

[0094] In step 608, a second material precursor is deposited on the first coating layer 174 via ALD to form a second coating layer 178. The second coating layer 178 may be formed from a material containing YOF, YF3, or Y2O3.

[0086]

[0095] In step 610, an optional third surface treatment is applied to the outer surface 180 of the second coating layer 178. In some examples, the third surface treatment may include one or more of the cleaning processes described above with respect to step 202.

[0087]

[0096] Figure 7 shows a method 700 for forming the exemplary surface coating of Figure 1E via EBIAD or ALD, according to one embodiment, when the support 132 is formed from a material resistant to the process environment. In one embodiment, the support 132 may be formed from a material resistant to the process environment in the processing chamber, including, but not limited to, stainless steel, bulk nickel pack, nickel alloy, etc.

[0088]

[0097] Generally, materials resistant to the process environment within a processing chamber include materials that do not produce particles or reaction products when exposed to process gases. In some examples, the process gas may include reactive gases such as fluorine-containing gases or chlorine-containing gases. In some examples, the process gas may further include vapors. In some examples, the process gas may further include one or more purge gases or carrier gases (e.g., hydrogen, helium, and / or argon). In some examples, the reactive gas may include hydrogen fluoride (e.g., HF), anhydrous hydrogen fluoride (which may be referred to as "AHF"), diatomic fluorine (F2), nitrogen fluoride (e.g., nitrogen trifluoride (NF3)), carbon fluoride (e.g., carbon tetrafluoride (CF4), hexafluoroethane (C2F6), trifluoromethane (CHF3), difluoromethane (CH2F2), octofluoropropane (C3F8), octofluorocyclobutane (C4F8), octofluoro[1-]butane (C4F8), octofluoro[2-]butane (C4F8), or octofluoroisobutylene (C4F8)), sulfur fluoride (e.g., sulfur hexafluoride (SF6)), ammonia (NH3), or combinations thereof.

[0089]

[0098] In step 702, an optional first surface treatment is applied to the outer surface 172 of the base layer 170. In some examples, the first surface treatment may include one or more of the cleaning processes described above with respect to step 202.

[0090]

[0099] In step 704A, since the base layer 170 contains a material resistant to the process environment, the material precursor corresponding to the first coating layer 174 may be omitted, and instead the material precursor may be deposited on the base layer 170 to form the coating layer 182. The coating layer 182 corresponds to the second coating layer 178 and therefore may include one or more embodiments of the second coating layer 178 described above. In one embodiment, the material precursor is deposited on the base layer 170 via EBIAD on at least the substrate support surface 133 to form the coating layer 182. The coating layer 182 may be formed from a material containing YOF, YF3, or Y2O3. In such an example, the second coating layer 178 may extend from C1 to at least R1 on the support 132.

[0091]

[0100] In another embodiment, in step 704B, the material precursor is instead deposited on the base layer via ALD to form a coating layer 182. In such an embodiment, the coating layer 182 is directly distributed over the entire outer surface 172 of the base layer 170. The coating layer 182 may be formed from a material containing YOF, YF3, or Y2O3, and may include one or more embodiments of the second coating layer 178 described above.

[0092]

[0101] In step 706, an optional second surface treatment is applied to the outer surface 184 of the coating layer 182. In some examples, the second surface treatment may include one or more of the cleaning processes described above with respect to step 202.

[0093]

[0102] The advantages of this disclosure include improved coatings for substrate support assemblies in processing chambers. One embodiment provides a two-component surface coating in contrast to conventional one-component coatings containing metallic contaminants. The two-component coating comprises an optional first coating that reduces corrosion across the entire surface of the substrate support assembly, and a second coating that is free of or contains reduced amounts of metallic contaminants that reduces metallic contamination on the back surface of the substrate.

[0094]

[0103] While the foregoing applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure can be devised without departing from the fundamental scope of the present disclosure.

Claims

1. A method for forming a surface coating, A method of depositing a first material onto the outer surface of a support for a processing chamber to form a first coating layer on the support, wherein the outer surface of the support includes the uppermost surface, and the first material comprises at least one of a metal-containing material or an alloy. A second coating layer is formed by depositing a second material on at least a portion of the first coating layer, which is placed on the uppermost surface of the support, wherein the second material is a non-metallic material or a material with a low metal content. Methods that include...

2. The method according to claim 1, wherein depositing the second material includes depositing the second material on a substrate support surface on the uppermost surface of the support, extending over a first radial distance from the center of the support.

3. The method according to claim 1, further comprising depositing the second material over the entire support.

4. The method according to claim 1, wherein depositing the first material comprises performing an ENP process to form the first coating layer having a thickness in the range of about 10 μm to about 50 μm.

5. The method according to claim 1, wherein depositing the second material comprises performing an EBIAD process to form the second coating layer having a thickness in the range of about 50 nm to about 15 μm.

6. The method according to claim 1, wherein depositing the first material comprises performing an ALD process to form the first coating layer having a thickness in the range of about 5 nm to about 300 nm.

7. The method according to claim 1, wherein depositing the second material comprises performing an ALD process to form the second coating layer having a thickness in the range of about 5 nm to about 500 nm.

8. The first coating layer includes electroless nickel plating, and the second coating layer is YOF, YF ３ and Y ２ O ３ The method according to claim 1, comprising a material selected from the group consisting of the following.

9. Depositing the first material involves performing an ALD process, and Al ２ O ３ The process includes forming the first coating layer containing and depositing the second material, and performing the ALD process to YOF, YF ３ and Y ２ O ３ The method according to claim 1, comprising forming the second coating layer comprising a material selected from the group consisting of the following.

10. A support for supporting a substrate within a processing chamber, A main body having an outer surface including the top surface, A two-component coating disposed on the outer surface of the main body, A first coating layer disposed over the entire outer surface of the main body, comprising at least one of a metal-containing material or an alloy, A second coating layer disposed on the first coating layer, the second coating layer being disposed on the uppermost surface of the main body and extending radially from the center of the main body, and being a non-metallic coating or a coating with a low metal content, A two-component coating, A support that includes a support.

11. The support according to claim 10, wherein the second coating layer is arranged over the entirety of the first coating layer.

12. The support according to claim 10, wherein the second coating layer is disposed on the substrate contact surface on the uppermost surface of the main body.

13. The first coating layer includes electroless nickel plating, and the second coating layer includes a material selected from the group consisting of yttrium oxyfluoride (YOF), yttrium fluoride (YF ３ ), and yttrium oxide (Y ２ O ３ ). The support according to claim 10.

14. The first coating layer is Al ２ O ３ The second coating layer includes YOF, YF ３ and Y ２ O ３ The support according to claim 10, comprising a material selected from the group consisting of the following.

15. The first coating layer is SiO ２ The second coating layer includes YOF, YF ３ and Y ２ O ３ The support according to claim 10, comprising a material selected from the group consisting of the following.

16. The support according to claim 10, wherein the main body comprises aluminum, aluminum oxide, aluminum nitride, or a combination thereof.

17. It is a system, A processing chamber configured to clean a substrate, Chamber body and A lid assembly positioned at the upper end of the chamber body, A dual-channel shower head having a first set of channels that provide fluid connections above and below the plane of the shower head and a second set of channels that provide fluid connections to the side ports of the chamber body. Lid assembly including, A substrate support assembly, at least partially disposed within the chamber body, configured to support the substrate within the processing chamber, A support having an outer surface, wherein the outer surface includes a substrate support surface on the uppermost surface of the support, and the substrate support surface extends over a first radial distance from the center of the support, A stem bonded to the support, and A coating disposed on the surface of the support, A first coating layer is provided across the entire outer surface of the support, and A second coating layer disposed on the first coating layer, the second coating layer extending at least over the substrate support surface of the support. A coating including, A substrate support assembly, Processing chamber A system that includes this.

18. The system according to claim 17, wherein the second coating layer is distributed over the entirety of the first coating layer.

19. The first coating layer is electroless nickel plating or Al ２ O ３ The second coating layer includes one of the following, and the second coating layer is YOF, YF ３ and Y ２ O ３ The system according to claim 17, comprising a material selected from the group consisting of the following.

20. The system according to claim 17, further comprising an epitaxy chamber for growing an epitaxial layer on the substrate after the substrate has been cleaned by the processing chamber.

Images