Device for improving process heterogeneity in semiconductor direct plasma processes

Abstract

Embodiments of this disclosure generally relate to high-efficiency inductively coupled plasma sources and plasma processing apparatuses. Specifically, embodiments relate to grids for improving plasma uniformity. In one embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a processing chamber, a substrate support disposed within the processing chamber, a grid support connected to the processing chamber, and a grid. The grid is connected to the grid support and positioned above the substrate support. The grid has a plurality of holes and one or more outer openings defined between the periphery of the grid and the grid support. Plasma received from a plasma source is configured to flow toward the substrate support through the plurality of holes and one or more outer openings of the grid.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to a chamber for direct plasma processing. Specifically, embodiments relate to a grid that improves plasma uniformity.

Background Art

[0002] Description of Related Art Plasma processing is used in the semiconductor industry for deposition, etching, resist removal, and related processes on semiconductor substrates and other substrates. Plasma sources are often used for plasma processing to generate high-density plasma and for reactive species to process substrates.

[0003] When processing a semiconductor substrate with plasma, it is generally desirable to make the plasma distribution on the substrate uniform. Current processes and treatments generally exhibit non-uniformity in the plasma distribution near the edges of the substrate. For example, due to the recombination of plasma at the chamber wall near the edge of the substrate, the plasma distribution may become non-uniform.

[0004] Therefore, what is needed in the art is an improved technique for uniformly distributing plasma across the entire substrate.

Summary of the Invention

[0005] In one embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a processing chamber, a substrate support disposed within the processing chamber, a grid support coupled to the processing chamber, and a grid. The grid is coupled to the grid support and disposed above the substrate support. The grid has a plurality of holes and one or more outer openings defined between the periphery of the grid and the grid support. Plasma received from a plasma source is configured to flow through the plurality of holes and the one or more outer openings of the grid toward the substrate support.

[0006] In another embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a processing chamber, a substrate support disposed within the processing chamber, a grid support connected to the processing chamber, and a grid. The grid is connected to a grid support via a plurality of vertical supports and suspended below it. The grid is positioned above the substrate support. The grid has a plurality of holes and one or more outer openings defined by the periphery of the grid, the grid support, and the vertical supports. Plasma received from a plasma source is configured to flow toward the substrate support through the plurality of holes and one or more outer openings of the grid.

[0007] In another embodiment, a grid assembly is provided. The grid assembly includes a grid support, a grid connected to the grid support, and a plurality of holes arranged through the grid. The guard assembly further includes one or more outer openings defined between the periphery of the grid and the periphery of the grid support, and the plasma is configured to flow through the plurality of holes in the grid and one or more outer openings.

[0008] To enable a more detailed understanding of the features of this disclosure described above, a more detailed description of this disclosure, which is briefly summarized above, can be obtained by referring to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the accompanying drawings only show exemplary embodiments and should not be considered to limit the scope of this disclosure, and other equally valid embodiments may also be permitted. [Brief explanation of the drawing]

[0009] [Figure 1A] This is a schematic diagram of a plasma processing apparatus having a grid suspended from a grid support, according to at least one embodiment. [Figure 1B] Figure 1A is a schematic diagram of a plasma processing apparatus having grids suspended from a grid support at different intervals from a substrate support, according to at least one embodiment. [Figure 2]These are isometric views of the grid and grid support shown in Figures 1A and 1B, according to at least one embodiment. [Figure 3] This is a schematic diagram of a plasma processing apparatus having a grid connected to a grid support using spokes, according to at least one embodiment. [Figure 4] This is an isometric view of the grid and grid support of Figure 3, according to at least one embodiment. [Figure 5] This is an isometric view of a grid having an angled support and a grid support according to at least one embodiment. [Modes for carrying out the invention]

[0010] For ease of understanding, identical elements common to the drawings are indicated with the same reference numeral where possible. Components and features of one embodiment are assumed to be usefully incorporated into other embodiments without further description.

[0011] Embodiments of this disclosure generally relate to high-efficiency inductively coupled plasma sources and plasma processing apparatuses. Specifically, embodiments relate to grids that improve plasma uniformity.

[0012] The aspects of this disclosure will be discussed with reference to “substrate” for explanatory and descriptive purposes. Those skilled in the art will understand that, by using the disclosures provided herein, exemplary aspects of this disclosure can be used in conjunction with any suitable semiconductor substrate, semiconductor wafer, or other suitable substrate. “Substrate support” means any structure that can be used to support a substrate.

[0013] Figure 1A shows an example of a plasma processing apparatus 100 having a grid 210 suspended from a grid support 220. The plasma processing apparatus 100 includes a processing chamber 110 and a plasma source 120 (e.g., a remote plasma source) connected to the processing chamber 110. The processing chamber 110 includes a substrate support 112 that is operable to hold a substrate 114. In some embodiments, the substrate has a thickness of less than 1 mm. The substrate support 112 may be placed in close proximity to one or more heat sources (not shown) that supply heat to the substrate during processing of the substrate in the processing chamber 110. Heat may be supplied via any suitable heat source, e.g., one or more lamps, e.g., one or more rapid heat treatment lamps, or a heated base (e.g., a base having a resistance heating element embedded therein or connected thereto).

[0014] A control device (not shown) is connected to the processing chamber 110 and may be used to control the chamber process, processing, as described herein. The substrate support 112 is located below the grid 210. In some embodiments, the substrate support 112 is connected to a shaft 165. The shaft is connected to an actuator (not shown) that provides rotational motion (about the axis) of the shaft and the substrate support. The actuator can additionally or alternatively adjust the height of the shaft 165 during processing.

[0015] The substrate support 112 includes a lift pin hole 166 located therein. The lift pin hole 166 is sized to accommodate a lift pin 164 for lifting the substrate 114 from the substrate support 112 either before or after the deposition process. The lift pin 164 may rest on a lift pin stopper 168 when the substrate support 114 is lowered from the processing position to the transfer position.

[0016] The induction coil 130 can generate plasma in the plasma source 120 (for example, the plasma generation region), and the plasma from the plasma source 120 flows to the surface of the substrate 114 through holes 240 provided in the grid 210 that separates the plasma source 120 from the processing chamber 110 (downstream region).

[0017] The plasma source 120 includes dielectric sidewalls 122 and a top cover 124. The dielectric sidewalls 122 and top cover 124, integrated with a gas injection insert 140, define the interior 125 of the plasma source. The dielectric sidewalls 122 can include any suitable dielectric material such as quartz. An induction coil 130 is positioned close to (e.g., adjacent to) the dielectric sidewalls 122 with respect to the plasma source 120. The induction coil 130 is connected to an RF power generator 134 via any suitable matching network 132. A supply gas is introduced into the interior of the plasma source from a gas supply device 150. When the induction coil 130 is energized with RF power from the RF power generator 134, plasma is generated in the plasma source 120. In some embodiments, the RF power is supplied to the induction coil 130 at approximately 1 kW to approximately 15 kW, for example, approximately 3 kW to approximately 10 kW. The induction coil 130 can ignite and maintain the plasma over a wide range of pressures and flow rates. In some embodiments, the plasma processing apparatus 100 includes a grounded Faraday shield 128 to reduce the capacitive coupling of the induction coil 130 to the plasma.

[0018] To enhance efficiency, the plasma processing apparatus 100 includes a gas injection insert 140 located inside the plasma source 125. Multiple gas injection channels 151 supply process, treatment gas to the inside of the plasma source 125 through an active region 172, where a reaction occurs between the high-temperature electrons and the supply gas, thereby enhancing the confinement of high-temperature electrons. The electron confinement enhancement region, or active region 172, is defined radially by the side walls and vacuum tubes of the gas injection insert and vertically by the edges of the bottom surface 180 of the insert. The active region 172 provides an electron confinement region within the inside of the plasma source 125 for efficient plasma generation and maintenance. Narrow gas injection channels 151 prevent plasma diffusion from the inside of the chamber into the gas injection channels 151. The gas injection channels 151 can have a diameter of approximately 1 mm or more, for example, approximately 1 mm to approximately 10 mm. The gas injection insert 140 forces the process, treatment gas to pass through the active region 172 where the plasma is formed.

[0019] The ability of the gas injection insert 140 to improve the efficiency of the plasma processing apparatus 100 is independent of the material of the gas injection insert 140, as long as the wall that is in direct contact with the radicals is made of a material with a low radical recombination rate. For example, in some embodiments, the gas injection insert 140 can be made of a metal such as aluminum with a coating configured to reduce surface recombination. Alternatively, the gas injection insert 140 can be a dielectric material such as quartz, or an insulating material.

[0020] The induction coil 130 is aligned with the active region such that the upper turn of the coil is above the bottom surface 180 of the gas injection insert 140 and operates substantially within the active region of the internal volume, while the lower turn of the coil is below the bottom surface 180 and operates substantially outside the active region. The center of the coil substantially coincides with the bottom surface 180. Within this boundary, the coil position can be adjusted, that is, to control the generation of desired chemical nuclides for the plasma process, and to supply chemical nuclides to the substrate while reducing or eliminating losses. For example, plasma maintenance conditions (balance of local ion generation and loss) may not be optimal conditions for generating nuclides for the plasma process, or to supply nuclides to the substrate. With regard to the supply of nuclides to the substrate, efficiency may depend on the volume of these particular nuclides and wall recombination. Therefore, by controlling the alignment of the coil with respect to the bottom surface 180, the source efficiency of the plasma process, or to supply nuclides can be controlled.

[0021] In some embodiments, the coil has a short transition region near the leads, with the remainder of the coil turns parallel to the bottom surface 180; in other embodiments, the coil is helical, but the top and bottom turns of the coil can always be defined. In some embodiments, the coil can have 2 to 5 turns.

[0022] In some embodiments, the bottom surface 180 is aligned with a portion of the induction coil 130 (e.g., coil loop 182) along the axis by utilizing a gas injection insert 140 (and a top cover 124 which may be a pre-formed portion of the gas injection insert 140) of a suitable size for forming the plasma source 120. Alternatively, the bottom surface 180 may be movable along a perpendicular direction V1 with respect to the plasma source 120 while the remaining portion of the gas injection insert 140 remains stationary (e.g., fixed) as a part of the plasma source 120 to provide alignment between the bottom surface 180 and a portion of the induction coil 130. For example, the actuator 170 is coupled to the gas injection insert 140 to adjust the position of the bottom surface 180 such that a portion having a first length (L1) of the gas injection insert 140 is adjusted to a second length (L2). The actuator 170 can be any suitable actuator, such as a motor, an electric motor, a stepping motor, a pneumatic actuator, etc. In some embodiments, the difference in length (Δ) from L1 to L2 is from about 0.1 cm to about 4 cm, such as from about 1 cm to about 2 cm.

[0023] In addition or alternatively, the gas injection insert 140 can be coupled to an actuator (such as actuator 170), and the actuator 170 is configured to move the entire gas injection insert 140 vertically (e.g., along the perpendicular direction V1 with respect to the plasma source 120) to align the bottom surface 180 with a portion of the induction coil 130. A spacer (not shown) can be used to fill the gap formed by moving the insert vertically between the gas injection insert 140 and another part of the plasma source 120 (such as between the top cover 124 and the dielectric sidewall 122). The spacer can be formed from a ceramic material such as quartz.

[0024] Generally, when the center of the induction coil 130 is positioned above the bottom surface 180, the ionization and dissociation efficiency is improved. However, since many nuclides may recombine on the wall surface of the narrow active region, the transport efficiency of these nuclides to the substrate decreases. By positioning the induction coil 130 below the bottom surface 180, the plasma supply efficiency can be improved, but there is a possibility of reducing the plasma generation efficiency.

[0025] The process liner 175 is disposed on the plasma source 120 and the processing chamber 110 where the plasma source 120 and the processing chamber 110 are connected. The process liner 175 prevents the process, the processing gas, and the plasma from leaking from the portion where the processing chamber 110 and the plasma source 120 are connected. The grid support 220 is connected to the processing chamber 110. In some embodiments, the grid support 220 is connected to the process liner 175 connected to the processing chamber 110. In other embodiments, the grid support 220 is directly connected to the processing chamber 110. The grid 210 is connected to the grid support 220. The grid 210 is disposed above the substrate support 112. In FIG. 1A, the grid 210 is suspended under the grid support 220. The grid 210 is connected to the grid support 220 using a plurality of vertical supports 230. The vertical supports 230 are connected to the grid 210 and the grid support 220. The grid 210, the grid support 220, and the vertical supports 230 form the grid assembly 200. In some embodiments, as shown in FIG. 1A, two vertical supports 230 are used to connect the grid 210 to the grid support 220. In other embodiments, more vertical supports 230, such as the three vertical supports 230 in FIG. 2, are used.

[0026] The grid 210 includes a plurality of holes 240. The holes 240 are arranged to penetrate the grid 210 (for example, the holes 240 traverse the thickness of the grid 210). One or more outer openings 250 (shown in Figure 2) are defined by the grid 210, grid support 220, and vertical support 230. The grid 210 is configured to isolate a region of the processing chamber 110 from the plasma source 120.

[0027] The grid 210 controls the flow of plasma through the holes 240 and the outer opening 250. The plasma is configured to flow from the plasma source 120 through the grid 210 and the outer opening 250 to the substrate support. The plasma source 120 generates plasma charged particles (ions and electrons) that recombine on the grid 210, allowing only neutral plasma nuclides to pass through the grid 210 to the processing chamber 110. Multiple holes at the bottom of the grid 210 can have different patterns and sizes, as illustrated in Figure 2. One or more outer openings 250 can have different sizes, as shown in Figure 2.

[0028] In some embodiments, the grid 210 is formed from aluminum, anodized aluminum, quartz, aluminum nitride, aluminum oxide, tantalum, tantalum nitride, titanium, titanium nitride, borosilicate, yttrium oxide, yttrium zirconium oxide, or any combination thereof. For example, AlN is effective as a flux for nitrogen radicals, but conventional grids are prone to nitrogen radical recombination. Similarly, aluminum oxide can provide flux for oxygen and hydrogen radicals, but conventional grids are prone to their recombination. In some embodiments, the grid 210 has a thickness of about 3 mm to about 8 mm, which defines the length of the holes. The ratio of the grid thickness (length) to the average diameter of the multiple holes may be greater than about 1:4, for example, about 1:2 to about 3:1. In some embodiments, the grid has a diameter of about 150 mm to 300 mm. The diameter of the grid is configured such that the substrate 114 on the substrate support has a diameter greater than the diameter of the grid.

[0029] The plasma source 120 is configured to flow plasma toward the grid 210. Part of the plasma flows through the holes 240 in the grid 210. Another part of the plasma flows through the outer opening 250 between the grid 210 and the grid support 220. After flowing through the holes 240 and the outer opening 250, the plasma flows toward the substrate support 112. The plasma is used to process the substrate 114. The portion of the plasma that passes through the holes 240 mainly processes the central region of the substrate 114. The portion of the plasma that passes through the outer opening 250 mainly processes the edges of the substrate 114. As described above, the grid 210 acts as a plasma flow manager. The grid 210 prevents the plasma from recombining at the walls of the processing chamber 110.

[0030] Plasma recombination at the wall limits the amount of plasma reaching the edges of the substrate 114, resulting in a non-uniform distribution of plasma across the substrate 114. However, implementing only the grid 210 may not result in a uniform plasma distribution on and / or near the edges of the substrate 114. For example, plasma passing through the holes 240 of the grid may still be focused near the center of the substrate 114. Therefore, the plasma can also be directed directly to the edges of the substrate so that the edges are uniformly covered with plasma. Plasma flowing through the outer opening 250 between the grid 210 and the grid support 220 promotes a uniform plasma distribution at the edges. Some of the plasma flowing through the outer opening 250 contacts the substrate 114 at the edges. Direct contact of the plasma with the edges results in a more uniform plasma distribution.

[0031] The exhaust port 192 is connected to the side wall of the processing chamber 110. In some embodiments, the exhaust port 192 may be connected to the bottom wall of the processing chamber 110 to provide azimuthal independence. The plasma processing apparatus 100 described in Figure 1A is an example of a plasma processing apparatus 100. The grid assembly 200 is intended to be used in a variety of plasma processing apparatuses, not limited to the one shown in Figure 1A.

[0032] Figure 1B is a schematic diagram of the plasma processing apparatus of Figure 1A, having a grid suspended from a grid support 220 at different intervals from the substrate support. The vertical support 230 can be adjusted as shown in Figure 1B to lower the grid position relative to the grid support. The grid 210 can be moved closer to or further away from the substrate support 112. The spacing 215 between the grid 210 and the grid support 220 can be adjusted using the vertical support 230, as will be described in more detail in relation to Figure 2.

[0033] Figure 2 is an isometric view of the grid 210 and grid support 220 of Figures 1A and 1B. Figure 2 shows one hole 240 pattern that can be implemented on the grid 210. In some embodiments, other hole 240 patterns are implemented. The hole diameter 241 of the holes 240 ranges from 0.1 inches to 1 inch. In some embodiments, the hole diameter 241 of the holes 240 varies throughout the holes 240. In some embodiments, the hole diameter 241 is constant across all holes 240. The grid has a first surface 219 having a surface area. In some embodiments, the holes 240 occupy about 10% to about 70% (including 20%, 30%, and 50%) of the surface area of ​​the first surface 219 of the grid 210. Larger holes 240 can be implemented to increase the plasma flow to the substrate 114 and reduce the distribution on the edges of the substrate 114. Smaller holes 240 can be implemented to reduce the plasma flow to the substrate 114 and increase its distribution across the edges of the substrate 114.

[0034] Multiple vertical supports 230 are used to connect the grid 210 to the grid supports 220. In Figure 2, three vertical supports 230 are shown: the first vertical support 231, the second vertical support 232, and the third vertical support 233. In some embodiments, a different number of vertical supports 230 are used. The vertical supports 230 can be mechanically adjusted to change the spacing 215 between the grid 210 and the grid supports 220. In some embodiments, the spacing 215 is approximately 1 inch to approximately 3 inches. The spacing 215 is directly related to the spacing between the grid 210 and the substrate support 112. The spacing between the grid 210 and the substrate support 112 affects the distribution of plasma around the edges of the substrate. The spacing between the grid 210 and the substrate support 112 produces a shadowing effect. A smaller spacing 215 results in a smaller outer opening 250, and less plasma reaches the edges of the substrate 114. As the spacing 215 increases, the grid 210 moves closer to the substrate support 112, causing a shadowing effect. The shadowing effect refers to the fact that the grid assembly 200 casts a shadow on the substrate 114 by influencing the plasma distribution on the substrate 114. For example, if the grid 210 is close to the substrate support 112, the plasma does not contact the substrate at a position directly below the structure of the holes 240, so the pattern of the holes 240 in the grid 210 may be visible on the surface of the substrate 114. Since the plasma expands as it passes through the processing chamber 110, the spacing 215 is selected based on the hole diameter 241 of the holes 240.

[0035] The grid 210 is circular and has a periphery 211 and a diameter 212. The grid support 220 is ring-shaped and has a radial length 221, an inner circumference 222, and an outer circumference 223. In some embodiments, the vertical support 230 is connected to the grid 210 on its periphery 211. At the opposite end, the vertical support 230 is connected to the grid support 220 on its inner circumference 222.

[0036] The outer openings 250 are shown in Figure 2. Each outer opening 250 is defined between a portion of the periphery 211 of the grid 210, a portion of the inner circumference 222 of the grid support 220, and the vertical support 230. In Figure 2, three outer openings 250 are shown: the first outer opening 251, the second outer opening 252, and the third outer opening 253. The first outer opening 251 is defined by the first portion of the periphery 211 of the grid 210, the first portion of the inner circumference 222 of the grid support 220, the first vertical support 231, and the second vertical support 232. The second outer opening 252 is defined by the second portion of the periphery 211 of the grid 210, the second portion of the inner circumference 222 of the grid support 220, the second vertical support 232, and the third vertical support 233. The third outer opening 253 is defined by a third portion of the periphery 211 of the grid 210, a third portion of the inner circumference 222 of the grid support 220, a third vertical support 233, and a first vertical support 231.

[0037] Figure 3 is a schematic diagram of an exemplary plasma processing apparatus 100 in which a grid 210 is connected to a grid support 220 using a plurality of spokes 430. An example of the plasma processing apparatus 100 is shown in Figure 1A. The grid support 220 is connected to the processing chamber 110 as shown in Figure 1A. The grid 210 is connected to the grid support 220. The grid 210 is positioned above the substrate support 112. In Figure 3, the grid 210 and the grid support 220 are positioned substantially on the same plane. The grid 210 is connected to the grid support 220 using a plurality of spokes 430. The spokes 430 are connected to the grid 210 and the grid support 220. The grid 210, grid support 220, and spokes 430 form a grid assembly 400. As shown in Figure 3, in some embodiments, two spokes 430 are used to connect the grid 210 to the grid support 220. In other embodiments, more spokes 430 are used, such as eight in Figure 4.

[0038] The grid 210 includes a plurality of holes 240. The holes 240 are arranged to penetrate the grid 210 (for example, the holes 240 traverse the thickness of the grid 210). One or more outer openings 450 (shown in Figure 4) are defined by the grid 210, the grid support 220, and the spokes 430. The grid 210 is configured to separate a region of the processing chamber 110 from the plasma source 120. The plasma source 120 contains plasma charged particles (ions and electrons), and these charged particles recombine on the grid 210 so that only neutral plasma nuclides can pass through the grid and enter the processing chamber 110. The plurality of holes 240 at the bottom of the grid 210 can have different patterns and sizes, as described in Figure 4. One or more outer openings 250 can have different sizes, as shown in Figure 4.

[0039] The plasma processing apparatus 100 described in Figures 1A and 3 is an example of such an apparatus. The grid assembly 400 is intended to be used in a variety of plasma processing apparatuses, not limited to those shown in Figures 1A and 3. Figure 4 is an isometric view of the grid 210 and grid support 220 of Figure 3.

[0040] Figure 4 shows one hole 240 pattern that can be implemented with the grid 210. In some embodiments, other hole 240 patterns are implemented. Multiple spokes 430 are used to connect the grid 210 to the grid support 220. In Figure 4, eight spokes 430 are shown, the first four of which are defined for illustrative purposes: the first spoke 431, the second spoke 432, the third spoke 433, and the fourth spoke 434. In some embodiments, a different number of spokes 430 are implemented.

[0041] The grid 210 is circular and has a periphery 411 and a diameter 412. The grid support 220 is ring-shaped and has a radial length 421, an inner circumference 422, and an outer circumference 423. In some embodiments, the spokes 430 are connected to the grid 210 on its periphery 411. At the opposite end, the spokes 430 are connected to the grid support 220 at its inner circumference 422.

[0042] The outer openings 450 are shown in Figure 4. Each outer opening is defined by a portion of the periphery 411 of the grid 210, a portion of the inner circumference 422 of the grid support 220, and a spoke 430. In Figure 4, eight outer openings 250 are shown, the first four of which are described for illustrative purposes: the first outer opening 451, the second outer opening 452, the third outer opening 453, and the fourth outer opening 454. The first outer opening 451 is defined by a first portion of the periphery 411 of the grid 210, a first portion of the inner circumference 422 of the grid support 220, a first spoke 431, and a second spoke 432. The second outer opening 452 is defined by a second portion of the periphery 411 of the grid 210, a second portion of the inner circumference 422 of the grid support 220, a second spoke 432, and a third spoke 433. The third outer opening 453 is defined by the third portion of the periphery 411 of the grid 210, the third portion of the inner circumference 422 of the grid support 220, the third spoke 433, and the fourth spoke 434. The fourth outer opening 454 is defined by the fourth portion of the periphery 411 of the grid 210, the fourth portion of the inner circumference 422 of the grid support 220, the fourth spoke 434, and the fifth spoke.

[0043] Figure 5 is an isometric view of the grid 210 and grid support 220, which have multiple angled supports 530. The grid 210, grid support 220, and angled supports 530 form a grid assembly 500. Figure 5 shows one hole 240 pattern that can be used with the grid 210. In some embodiments, other hole 240 patterns are implemented.

[0044] Multiple angled supports 530 connect the grid 210 to the grid supports 220. Figure 5 shows the angled supports 530, the first four of which are defined for illustrative purposes: the first angled support 531, the second angled support 532, the third angled support 533, and the fourth angled support (not shown). In some embodiments, a different number of angled supports 530 are used. The angled supports 530 have an angle 555 defined between the angled support 530 and the normal axis of the grid 210. The angle 555 is greater than 0 degrees and less than 90 degrees. When the angle 555 approaches 0 degrees, including 0 degrees, the grid assembly 500 behaves like the grid assembly 200. When the angle 555 approaches 90 degrees, including 90 degrees, the grid assembly 500 behaves like the grid assembly 400.

[0045] In various embodiments, the grid 210 has a circular shape with a periphery 511 and a diameter 512. For example, the grid support 220 may be ring-shaped and have a radial length 521, an inner circumference 522, and an outer circumference 523. In some embodiments, the angled support 530 is connected to the grid 210 on its periphery 511. At the opposite end, the angled support 530 is connected to the grid support 220 on its inner circumference 522. The grid support 220 and the grid 210 are separated by a gap 560. The gap 560 depends on the angle 555 and the length of the angled support 530. This relationship is defined by the following equation, where D is the gap 560, L is the length of the angled support, and θ is the angle 555. D = L cosθ The spacing of 560 may be greater than 0 inches and less than 3 inches. The grid 210 and grid support 220 are arranged on separate parallel planes.

[0046] Multiple outer openings 550 are shown in Figure 5. Each outer opening is defined by a portion of the outer perimeter 511 of the grid 210, a portion of the inner circumference 522 of the grid support 220, and an angled support 530. In Figure 5, eight outer openings 550 are shown, the first four of which are described for illustrative purposes: the first outer opening 551, the second outer opening 552, the third outer opening 553, and the fourth outer opening 554. The first outer opening 551 is defined by a first portion of the perimeter 511 of the grid 210, a first portion of the inner circumference 522 of the grid support 220, a first angled support 531, and a second angled support 532. The second outer opening 552 is defined by a second portion of the perimeter 511 of the grid 210, a second portion of the inner circumference 522 of the grid support 220, a second angled support 532, and a third angled support 533. The third outer opening 553 is defined by the third portion of the periphery 511 of the grid 210, the third portion of the inner circumference 522 of the grid support 220, the third angled support 533, and the fourth angled support. The fourth outer opening 554 is defined by the fourth portion of the periphery 511 of the grid 210, the fourth portion of the inner circumference 522 of the grid support 220, the fourth angled support, and the fifth angled support.

[0047] In summary, a grid 210 for use in a plasma processing apparatus 100 is provided. The grid 210 and grid support 220 offer many advantages. Such advantages include the grid assembly 200 improving the uniformity of the plasma distribution. The adjustable grid 210 allows for adjustment of the height between the grid 210 and the substrate 114. The adjustable height also affects the selected hole diameter 241. Furthermore, the diameter 212 of the grid 210 increases the plasma flow beyond the periphery 211 of the grid 210 through the outer opening 250 to process the edges of the substrate 114. In embodiments including a grid assembly 400, the outer opening 450 allows the plasma to reach the edges of the substrate 114, providing more uniform processing of the edges of the substrate 114. Embodiments of this disclosure can be retrofitted to existing plasma chambers. Embodiments further allow the processing chamber 110 and plasma source 120 to be opened without interaction with the grid 210. In some embodiments, the grid 210, grid support 220, vertical support 230, and spokes 430 can be made of different materials.

[0048] While the foregoing description applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure can be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is defined by the following claims.

Claims

1. Processing chamber and A substrate support arranged in the processing chamber A grid support connected to the processing chamber and A grid connected to the grid support and positioned above the substrate support, A plasma processing apparatus comprising a grid having a plurality of holes and one or more outer openings defined between the periphery of the grid and the grid support, wherein plasma received from a plasma source is configured to flow through the plurality of holes and the one or more outer openings of the grid toward the substrate support.

2. The plasma processing apparatus according to claim 1, wherein the grid is suspended below the grid support by a plurality of vertical supports spaced apart.

3. The plasma processing apparatus according to claim 2, wherein the one or more outer openings are further defined by the plurality of vertical supports.

4. The plasma apparatus according to claim 3, wherein the spacing between the grid and the grid support is adjustable via the plurality of vertical supports, and the spacing is approximately 1 inch to approximately 3 inches.

5. The plasma apparatus according to claim 1, wherein the substrate support is configured to receive a substrate having a first diameter, and the second diameter of the grid is smaller than the first diameter.

6. The plasma processing apparatus according to claim 1, wherein the grid and the grid support are arranged substantially on the same plane and connected by a plurality of spokes.

7. The plasma processing apparatus according to claim 6, wherein the outer opening of the grid is further defined by the plurality of spokes.

8. The plasma processing apparatus according to claim 1, wherein the plurality of holes constitute about 10% to about 70% of the surface area of ​​the first surface of the grid.

9. The plasma processing apparatus according to claim 1, wherein each of the plurality of holes has a diameter of about 0.1 inches to about 1 inch.

10. The plasma processing apparatus according to claim 1, wherein a process liner is connected between the processing chamber and the grid.

11. The plasma processing apparatus according to claim 1, wherein the grid is suspended below the grid support by a plurality of angled supports spaced apart, and the plurality of angled supports have an angle between the angled supports and the normal axis of the grid.

12. Processing chamber and A substrate support arranged in the processing chamber, A grid support connected to the processing chamber, A grid and a grid are connected to the grid support via multiple vertical supports, suspended below the grid support and positioned above the substrate support. A plasma processing apparatus including, A plasma processing apparatus comprising a grid having a plurality of holes and one or more outer openings defined by the periphery of the grid, the grid support, and the plurality of vertical supports, wherein plasma received from a plasma source is configured to flow through the plurality of holes and one or more outer openings of the grid toward the substrate support.

13. The plasma processing apparatus according to claim 12, wherein the distance between the grid and the grid support is adjustable via the plurality of vertical supports.

14. The plasma apparatus according to claim 12, wherein the substrate support is configured to receive a substrate having a first diameter, and the second diameter of the grid is smaller than the first diameter.

15. The plasma processing apparatus according to claim 12, wherein the plurality of holes constitute about 10% to about 70% of the surface area of ​​the first surface of the grid.

16. The plasma processing apparatus according to claim 12, wherein each of the plurality of holes has a diameter of about 0.1 inches to about 1 inch.

17. Grid support and A grid connected to the grid support, Multiple holes arranged through the aforementioned grid, One or more outer openings defined between the periphery of the grid and the periphery of the grid support A grid assembly comprising a plurality of holes and one or more outer openings of the grid, wherein the plasma is configured to flow through the plurality of holes and the grid.

18. The grid assembly according to claim 17, wherein the grid is connected and suspended below the grid supports at intervals via a plurality of vertical supports.

19. The grid assembly according to claim 17, wherein the grid and the grid support are arranged substantially in the same plane, and the grid is connected to the grid support via a plurality of spokes.

20. The grid assembly according to claim 17, wherein the grid is connected to the grid support via a plurality of supports and suspended below the grid support at intervals, the plurality of supports being angled supports, the angled supports forming a first angle with the plane of the grid and a second angle with the normal axis of the plane of the grid.

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