Plasma Processing Equipment

Abstract

In order to provide a plasma processing apparatus that is safe, low-cost, and easy to manufacture, the apparatus includes a processing chamber that is disposed inside a vacuum vessel, in which a wafer to be processed is disposed and plasma is generated, and a cylindrical sample stage that is disposed inside the processing chamber and on which the wafer is placed. The sample stage includes a disk-shaped substrate, a dielectric film that covers the upper surface of the substrate, and a heater layer that is disposed inside the dielectric film. The heater layer includes a plurality of film-shaped heaters that are disposed in each of a plurality of rectangular regions. Each of the plurality of regions is disposed such that one side of the rectangular shape faces an adjacent region. The apparatus includes a cylindrical power supply connector that is attached to and detached from the bottom of the substrate. The power supply connector is configured to be electrically connected to one point of each of the plurality of film-shaped heaters that are disposed in each of the plurality of regions to supply power from a DC power source. The apparatus includes a wiring member that includes a plurality of wires to which power is supplied and is formed of a resin plate-shaped member that is connected to the bottom of the power supply connector. The wiring member has an arm that extends along the bottom surface of the substrate.

Description

[Technical field]

[0001] The present disclosure relates to a plasma processing apparatus in which a substrate-like sample, such as a semiconductor wafer, is placed on the upper surface of a sample stage in a processing chamber inside a vacuum vessel, and the sample is processed using plasma formed by supplying a processing gas into the processing chamber, and in particular to a plasma processing apparatus which includes a plurality of film-like heaters in a dielectric film covering the upper surface of the sample stage, and which uses these heaters to adjust the temperature of the sample while processing it. [Background technology]

[0002] In plasma processing equipment, in order to shorten the time required for etching a so-called multilayer film, which is a film formed on the surface of a plate-shaped sample such as a semiconductor wafer (hereinafter simply referred to as a wafer), adjacent films are processed vertically in the same processing chamber, without removing the wafer from the processing chamber between the processing of each of these films.

[0003] In such a process, it is important to adjust the temperature of the sample stage placed in the processing chamber to an appropriate temperature for processing the wafer. For this reason, a heater is built into the sample stage of the plasma processing device, and when processing the wafer, the temperature is adjusted to an appropriate temperature for processing, thereby improving the processing accuracy.

[0004] One example of such a plasma processing apparatus is disclosed in Japanese Patent Laid-Open No. 2007-67036 (Patent Document 1). Patent Document 1 discloses a plasma processing apparatus as follows: "(See Claim 1) A vacuum processing apparatus having a vacuum vessel in which the inside is decompressed, a sample stage arranged in the vacuum vessel, and an electrostatic chucking device provided on the sample stage for holding a semiconductor wafer, and for forming plasma above the sample stage to etch the semiconductor wafer, the electrostatic chucking device being a vacuum processing apparatus in which a first dielectric film is formed on a conductive base material, a plurality of approximately ring-shaped electrode films for electrostatic chucking are formed concentrically and spaced apart on the surface of the first dielectric film, a ring-shaped heater film is formed between the electrode films in the radial direction, and a second dielectric film is formed on the upper surfaces of the electrode film and the heater film." According to the configuration of Patent Document 1, the temperature distribution in the wafer surface can be changed for each etching condition.

[0005] Furthermore, as another example of such a plasma processing apparatus, one disclosed in JP 2017-157855 A (Patent Document 2) is known. Patent Document 2 discloses a plasma processing apparatus including "(see claim 1) an electrostatic chuck unit having a mounting surface on one main surface for mounting a plate-shaped sample and equipped with an electrode for electrostatic attraction, a temperature adjustment base portion arranged on the opposite side of the mounting surface with respect to the electrostatic chuck unit and cooling the electrostatic chuck unit, a first heater element consisting of a single or multiple main heaters that adjusts the temperature of the attraction surface of the electrostatic chuck unit in a single or multiple main heater adjustment region, a second heater element consisting of multiple sub-heaters that adjusts the temperature of a sub-heater adjustment region that is larger than the main heater adjustment region of the first heater element, and a control unit that controls the voltage applied to the sub-heater." According to the configuration of Patent Document 2, the temperature distribution of each zone divided into multiple main heaters can be individually controlled, and the temperature adjustment in each zone can be finely adjusted by the sub-heater. Therefore, even if a partial temperature distribution occurs in the plate-shaped sample due to fluctuations in the plasma generation state or film formation conditions when the plate-shaped sample is held, the temperature distribution can be suppressed by fine-tuning the temperature using the sub-heater. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2007-67036 A [Patent Document 2] JP 2017-157855 A Summary of the Invention [Problem to be solved by the invention]

[0007] When considering arranging multiple heaters and controlling the temperature of the electrode base material of the sample stage, the following problem arises. A total of two holes are required for each zone, one for power supply and one for current return, and arranging the holes becomes difficult as the number of zones increases. Even if it were possible to arrange them, drilling a large number of holes would be expensive and difficult to process.

[0008] An object of the present disclosure is to provide a technology for safely, easily and at low cost fabricating electrodes for a multi-zone heater layer (heater wire). [Means for solving the problem]

[0009] According to one aspect of the present disclosure, a processing chamber disposed within the vacuum vessel, the processing chamber having a wafer to be processed disposed therein and in which plasma is generated; a cylindrical sample stage disposed within the processing chamber and on whose upper surface the wafer is placed; the sample stage includes a disk-shaped substrate, a dielectric film covering an upper surface of the substrate, and a heater layer disposed inside the dielectric film; the heater layer includes a plurality of film heaters arranged in each of a plurality of rectangular regions; Each of the plurality of regions is disposed such that one side of the rectangular shape faces an adjacent region; a power supply connector having a cylindrical shape that is attached to and detached from the bottom of the base material; the power supply connector is configured to be electrically connected to one location of each of the plurality of film heaters arranged in each of the plurality of regions to supply power from a DC power source; a wiring member including a plurality of wires to which the power is supplied and made of a resin plate-like member connected to a bottom of the power supply connector; The wiring member has an arm portion extending along a bottom surface of the base material. Effect of the Invention

[0010] According to the present disclosure, it is possible to provide a plasma processing apparatus that is safe, low-cost, and easy to manufacture. [Brief description of the drawings]

[0011] [Figure 1] 1 is a vertical cross-sectional view showing an outline of a configuration of a plasma processing apparatus according to an embodiment; [Diagram 2] 2 is a cross-sectional view showing a schematic view of a part of the configuration of a sample stage of the plasma processing apparatus shown in FIG. [Diagram 3] 3 is a partially enlarged cross-sectional view showing a schematic view of a part of the configuration of the sample stage of the plasma processing apparatus shown in FIG. 2. [Figure 4] FIG. 4 is a diagram showing an example of a second heater in the sample stage in the embodiment. [Diagram 5] FIG. 4 is a diagram showing an example of a first heater in a sample stage in the embodiment. [Figure 6] FIG. 4 is a layout diagram of a power supply section and a return section of a grid heater according to an embodiment. [Figure 7] FIG. 2 is an enlarged view of a set of four grid heaters according to an embodiment. [Figure 8] FIG. 13 is a diagram showing an example of polarity inversion in four grid heaters and their power supply parts according to an embodiment. [Figure 9]This is a schematic diagram showing the relationship between the four corners (first corner cna, second corner cnb, third corner cnc, fourth corner cnd) and four sides (first side SL1, second side SL2, third side SL3, fourth side SL4) of the rectangular region 501 described in Figure 5 and the four regions (first region CH1, second region CH2, third region CH3, fourth region CH4) of Figure 7. [Figure 10] 1 is a plan view showing a schematic arrangement of heaters, power supply parts, and return parts in a plurality of adjacent regions arranged on the upper surface of a sample stage in an embodiment. FIG. [Figure 11] 2 is a vertical sectional view showing a schematic outline of the structure of a lower part of a sample stage of the plasma processing apparatus according to the embodiment shown in FIG. 1. FIG. [Figure 12] FIG. 12 is a perspective view showing a schematic outline of the overall configuration of the FPC provided under the sample stage shown in FIG. [Figure 13] FIG. 13 is a perspective view that illustrates an outline of the configuration of the tip of the arm of the FPC illustrated in FIG. [Figure 14] FIG. 14 is a plan view that illustrates an outline of the configuration of an FPC according to a modified example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] Hereinafter, the embodiments will be described with reference to the drawings. However, in the following description, the same components are given the same reference numerals and repeated description may be omitted. Note that the drawings may be shown more diagrammatically than the actual embodiment in order to clarify the description, but they are merely examples and do not limit the interpretation of the present disclosure.

[0013] (Embodiment) Hereinafter, an embodiment of the present disclosure will be described mainly with reference to Fig. 1 to Fig. 8. Fig. 1 is a cross-sectional view showing a schematic outline of a configuration of a plasma processing apparatus according to the embodiment. In particular, Fig. 1 shows a plasma etching apparatus 100 that uses a microwave electric field as an electric field for forming plasma, generates ECR (Electron Cyclotron Resonance) between the electric field and magnetic field of the microwave to form plasma, and uses the plasma to etch a substrate-like sample such as a semiconductor wafer.

[0014] The plasma etching apparatus 100 has a vacuum vessel 101 with a processing chamber 104 therein where plasma is generated. The vacuum vessel 101 has a cylindrical shape and an open upper part, and a dielectric window 103 (e.g., made of quartz) for introducing microwaves is arranged on the upper part as a cover member, forming the processing chamber 104 in which the inside and the outside are airtightly separated. A vacuum exhaust port 110 is arranged on the lower part of the vacuum vessel 101, and is connected to a vacuum exhaust device (not shown) arranged below and connected to the vacuum vessel 101.

[0015] Furthermore, below the lower surface of the dielectric window 103 constituting the upper cover member of the vacuum vessel 101, a shower plate 102 constituting the ceiling surface of the processing chamber 104 is provided. The shower plate 102 has a plurality of gas introduction holes 102a arranged in the center, and etching gas is introduced into the processing chamber 104 through the plurality of gas introduction holes 102a. The shower plate 102 is a circular plate made of a dielectric material such as quartz.

[0016] Further, an electric field / magnetic field forming unit 160 that forms an electric field and a magnetic field for generating plasma 116 is disposed above the outside of vacuum vessel 101. Electric field / magnetic field forming unit 160 includes the following components and is provided in plasma etching apparatus 100. That is, electric field / magnetic field forming unit 160 includes a waveguide 105 that is disposed above dielectric window 103 and transmits an electric field therethrough to supply a high frequency electric field of a predetermined frequency for generating plasma 116 into processing chamber 104.

[0017] Furthermore, the electric field transmitted inside the waveguide 105 is generated by oscillation in an electric field generating power supply 106. The frequency of the electric field is not particularly limited, but in this embodiment, a microwave of 2.45 GHz is used.

[0018] Furthermore, magnetic field generating coils 107 for forming a magnetic field are disposed above the dielectric window 103 of the processing chamber 104, on the side wall of the vacuum vessel 101 constituting the cylindrical portion of the processing chamber 104, and on the outer periphery of the lower end of the waveguide 105, in a state surrounding these. The electric field of the microwaves generated by the electric field generating power source 106 propagates inside the waveguide 105, passes through the dielectric window 103 and the shower plate 102, and is supplied to the processing chamber 104 from above.

[0019] Furthermore, the magnetic field generating coil 107 generates ECR (Electron Cyclotron Resonance) by interaction with the magnetic field supplied into the processing chamber 104. Then, atoms or molecules of the processing gas introduced into the processing chamber 104 through the gas introduction holes 102a of the shower plate 102 are excited and dissociated, thereby generating high-density plasma 116 in the processing chamber 104.

[0020] Further, at the bottom of the processing chamber 104 and below the space in which the plasma 116 is generated, a wafer mounting electrode (first electrode) 120 constituting a sample stage is provided. The wafer mounting electrode 120 has a mounting surface 120a on which a semiconductor wafer (hereinafter also simply referred to as a wafer) 109, which is a sample (processing target), is mounted. The wafer mounting electrode 120 is disposed such that the mounting surface 120a faces the shower plate 102 or the dielectric window 103. Hereinafter, the wafer mounting electrode 120 may also be described as the sample stage 120.

[0021] The upper surface 120b of the wafer mounting electrode 120 is covered with a dielectric film 140 constituting the mounting surface 120a. Inside the dielectric film 140, a plurality of conductive films (electrostatic attraction electrodes) 111 for electrostatic attraction are arranged, which are connected to a DC power source 126 via a high-frequency filter 125 shown in FIG.

[0022] Here, the conductive film 111 constitutes the mounting surface 120a of the sample stage 120, and is a film-like electrode for electrostatic attraction to which DC power for attracting a semiconductor wafer by static electricity is supplied. In this case, the conductive film 111 may be a bipolar film in which one and the other of a plurality of film-like electrodes are given different polarities, or a unipolar film in which the same polarity is given, but is shown as a unipolar film in this embodiment.

[0023] Further, a high frequency power supply (first high frequency power supply) 124 and a matching box 129 are disposed at a position closer to the electrostatic attraction electrode (conductive film 111) than the high frequency filter 125 is, and these high frequency power supply 124 and matching box 129 are connected to an electrode substrate 108 having a circular or cylindrical shape and made of a conductive material, which is disposed inside the wafer mounting electrode 120. The high frequency power supply 124 is connected to the ground 112. Hereinafter, the electrode substrate 108 may also be simply referred to as substrate 108.

[0024] Then, high frequency power (first high frequency power) of a predetermined frequency is supplied from the high frequency power supply 124 to the electrode base material 108, and a bias potential is formed above the wafer 109 attracted and held on the upper surface of the wafer mounting electrode 120 during processing of the wafer 109. In other words, the sample stage has the wafer mounting electrode 120 to which high frequency power (first high frequency power) is supplied from the high frequency power supply 124 while the plasma 116 is being generated.

[0025] Inside the electrode base material 108, in order to remove the transferred heat and cool the wafer mounting electrode 120, multiple coolant flow paths 152 are arranged in a spiral or concentric manner around the central axis in the vertical direction of the electrode base material 108 or the wafer mounting electrode 120. A cooling coolant for cooling the electrode base material 108 flows through the coolant flow paths 152.

[0026] Furthermore, a recess 120d is disposed on the outer periphery of the upper part of the wafer mounting electrode 120, surrounding the upper part on the outer periphery of the mounting surface 120a. A susceptor ring 113, which is a ring-shaped member made of a dielectric material such as quartz or ceramics such as alumina, is placed and disposed on the ring-shaped upper surface of the recess 120d, which is formed lower than the mounting surface 120a of the sample stage.

[0027] With the upper surface of the susceptor ring 113 placed on the recessed portion 120d, the upper surface of the susceptor ring 113 has a dimension that makes it higher than the mounting surface 120a of the wafer mounting electrode 120. The susceptor ring 113 is disposed on the outer periphery of the mounting surface 120a of the wafer mounting electrode (sample stage) 120, and covers the surface of the wafer mounting electrode 120. Specifically, the susceptor ring 113 is configured to cover the upper surface and cylindrical side wall surface of the recessed portion 120d, as well as the cylindrical side wall surface of the wafer mounting electrode 120 below the recessed portion 120d.

[0028] In such a plasma etching apparatus 100, in a vacuum transfer chamber that is a separate vacuum container connected to the side wall of the vacuum container 101 and that is depressurized to the same pressure as that of the processing chamber 104 inside a vacuum transfer container, an unprocessed wafer 109 is placed on the arm tip of a robot for wafer transfer arranged in the vacuum transfer chamber. Then, a gate that is a passage that communicates between the vacuum transfer chamber and the processing chamber 104 is opened by the operation of a valve arranged in the vacuum transfer chamber, and the unprocessed wafer 109 placed on the arm tip of the robot is transferred into the processing chamber 104. Furthermore, the wafer 109 transferred to above the mounting surface 120a of the wafer mounting electrode 120 in the processing chamber 104 is transferred onto the lift pins by the vertical movement of the lift pins, and then placed on the mounting surface, and is attracted to and held on the mounting surface 120a of the wafer mounting electrode 120 by the electrostatic force generated by the DC power applied from the DC power source 126.

[0029] In this state, the etching gas has its flow rate or speed adjusted by a mass flow controller (not shown) and is introduced into the space between the dielectric window 103 and the quartz shower plate 102, and after diffusing in this space, is introduced into the processing chamber 104 through the gas inlet holes 102a of the shower plate 102. Thereafter, the gas and particles in the processing chamber 104 are exhausted through the vacuum exhaust port 110 by the operation of the vacuum exhaust device. Depending on the balance between the amount of gas supplied from the gas inlet holes 102a of the shower plate 102 and the amount of gas exhausted from the vacuum exhaust port 110, the inside of the processing chamber 104 is adjusted to a predetermined value within a range suitable for processing the wafer 109.

[0030] While the wafer 109 is being held by suction, a thermally conductive gas such as He (helium) is supplied from an opening (not shown) on the top surface of the dielectric film 140 to the gap between the wafer 109 and the top surface of the dielectric film 140, which is the mounting surface 120a of the wafer mounting electrode 120, thereby promoting heat transfer between the wafer 109 and the wafer mounting electrode 120. The temperature of the wafer mounting electrode 120 or the electrode base material 108 is adjusted in advance before the wafer 109 is mounted by circulating a coolant adjusted to a temperature within a predetermined range through a coolant flow path 152 arranged in the electrode base material 108 of the wafer mounting electrode 120. Therefore, by transferring heat between the wafer mounting electrode 120 or the electrode base material 108, which have a large heat capacity, the temperature of the wafer 109 is adjusted to be close to these temperatures before processing, and even after processing begins, heat is transferred from the wafer 109 to adjust the temperature of the wafer 109.

[0031] In this state, an electric field and a magnetic field of microwaves are supplied into the processing chamber 104, and plasma 116 is generated using the gas. When plasma 116 is formed, radio frequency (RF) bias power is supplied from a radio frequency power supply 124 to the electrode substrate 108, a bias potential is formed above the upper surface of the wafer 109, and charged particles such as ions in the plasma 116 are attracted to the upper surface of the wafer 109 according to the potential difference with the potential of the plasma 116. Furthermore, the charged particles collide with a mask previously placed on the upper surface of the wafer 109 and the surface of the film layer to be processed of the film structure including the film layer to be processed, thereby performing an etching process. During the etching process, the processing gas introduced into the processing chamber 104 and particles of reaction products generated during the process are exhausted from a vacuum exhaust port 110. During plasma processing in the plasma etching apparatus 100, a second high frequency power is supplied from a high frequency power source (second high frequency power source) 127 to a conductor ring (second electrode) 131 arranged on the upper part of the outer periphery of the sample stage via a power supply connector 161 (described later) that is provided on the sample stage and has an elastic conductive member.

[0032] In the wafer mounting electrode 120, an AC high voltage generated from a high frequency power supply (second high frequency power supply) 127 is introduced into a conductor ring (second electrode) 131 made of a conductor and arranged in the susceptor ring 113 via a load matching box 128 and a load impedance variable box 130. With this configuration, the impedance value for high frequency power from the high frequency power supply 127 through the electrode base material 108 to the outer periphery of the wafer 109 is relatively low by a combination of the load impedance variable box 130 adjusted to a suitable impedance value and a relatively high impedance portion arranged on the upper part of the susceptor ring 113. This makes it possible to effectively supply high frequency power to the outer periphery and outer periphery of the wafer 109, to reduce the concentration of the electric field at the outer periphery or outer periphery, and to attract charged particles such as ions in the plasma to the upper surface of the wafer 109 in a desired direction.

[0033] High frequency power supply 127 is connected to ground 112. The frequency of high frequency power supply 127 is preferably set to the same value as that of high frequency power supply 124 or to a constant multiple thereof.

[0034] Next, the configuration of the sample stage 120 according to this embodiment will be described in detail with reference to Figures 1, 2, and 3. Figure 2 is a cross-sectional view that typically shows a part of the configuration of the sample stage of the plasma processing apparatus shown in Figure 1. Figure 3 is a partially enlarged cross-sectional view that typically shows a part of the configuration of the sample stage of the plasma processing apparatus shown in Figure 2.

[0035] The disk- or cylindrical-shaped substrate 108 is arranged inside the sample stage 120 shown in Fig. 2 and is made of a metallic material such as titanium, aluminum, or a compound thereof, and is electrically connected to the ground electrode S and is conductively connected to the wall surface of the vacuum vessel 100 shown in Fig. 1, so as to be fixed to the ground potential. The substrate 108 has a convex portion in the center on which the wafer 109 is placed, and a concave portion which is arranged in a ring shape on the outer periphery of the convex portion, surrounds the convex portion, and has a lowered upper surface.

[0036] Between these protrusions and recesses, there is provided a step portion that constitutes a side wall of the outer periphery of the protrusions. As described above, the susceptor ring 113 made of a ceramic material is placed on the ring-shaped recess.

[0037] A dielectric film 201, which is a film made of a dielectric material such as ceramics, is disposed on the flat upper surface of the convex portion of the substrate 108. Furthermore, on the upper layer of the dielectric film 201, a plurality of first heater films (also called first heater layers) 202, which are film-like electrodes made of a conductive material and generate heat when supplied with DC power, are disposed so as to cover a plurality of regions on the upper surface of the substrate 108. In other words, the dielectric film 201 is disposed on the upper surface of the substrate 108, and further, on the upper layer of this dielectric film 201, a heater film 202, which is a film-like heater, is formed.

[0038] The heater film 202 is further covered with an upper dielectric film 203, and the heater film 202 is surrounded by a dielectric member (dielectric film 203). The sample stage 120 has a plurality of second heater films (also called second heater layers) 204, which are film-like electrodes made of a conductive material and have the same structure as above, arranged on the upper layer of the dielectric film 203 covering the heater film 202 arranged on the top of the dielectric film 201, and which generate heat when supplied with DC power, and which are arranged to cover multiple regions on the top surface of the base material 108.

[0039] Furthermore, a dielectric film 205 is disposed so as to cover the heater film 204. That is, a first heater film 202 surrounded by dielectric films 201 and 203 is disposed on the upper surface 120b of the substrate 108, and a second heater film 204 surrounded by dielectric films 203 and 205 is disposed on the upper surface of the first heater film 202 in the same manner as described above.

[0040] Each of the heater films 202, 204 is connected to DC power sources 314, 315, whose operation is adjusted according to a command signal from a controller, via power supply cables (power supply line, power supply path) 316, 317, so that DC power can be supplied from the DC power sources 314, 315. In other words, the power supply cables 316, 317 are cables that electrically connect the heater films 202, 204 to the DC power sources 314, 315 that supply DC power to the heater films 202, 204. However, the power supply cables 316, 317 do not include a filter for high-frequency power.

[0041] In this manner, the inside of the dielectric film 201 arranged on the upper surface 120b of the sample stage 120 is configured to have a plurality of first heater films 202 (called multi-zone heaters) capable of adjusting the temperature of the upper surface of the dielectric film 201 by adjusting the amount of heat generated for each region (zone) and a plurality of second heater films 204 on the upper layer thereof capable of adjusting the temperature of the upper surface.

[0042] The sample stage 120 has a first heater film 202 surrounded by dielectric films 201 and 203 arranged on the upper surface 120b of the substrate 108, and a second heater film 204 surrounded by dielectric films 203 and 205 arranged on the upper surface of the first heater film 202 as described above. The sample stage 120 further has a shield film 206, which is a film-like conductive member arranged on the upper surface of the dielectric film 205 so as to surround the outer periphery of the upper and peripheral parts, and the heater films 202 and 204 are surrounded (covered) by the shield film 206. In other words, the structure in which the heater films 202 and 204 are surrounded by the shield film (conductor film) 206 is encapsulated by the dielectric material constituting a part of the dielectric films 201, 203, and 205. The shield film 206 is electrically connected to the substrate 108, and thus the shield film 206 is fixed to the ground potential like the substrate 108, and as a result, the inflow of high frequency waves into the heater films 202 and 204 can be suppressed.

[0043] Furthermore, a dielectric film 207 is disposed on the upper surface of the shielding film 206, and an electrode 111 for electrostatic attraction and an electrode film 208, which is an electrode to which high-frequency power for forming a high-frequency bias is supplied, are disposed on the upper portion of this dielectric material member. That is, the electrode film 208 is a film made of a conductive material, and is electrically connected to a high-frequency bias power supply 313 that supplies high-frequency power of a predetermined frequency. In addition, a DC power supply 312 is also electrically connected to the electrode film 208, and by applying a DC voltage, the wafer 109 placed on the mounting surface of the sample stage 120 can be attracted by static electricity. The DC power supply 312 corresponds to the DC power supply 126 in FIG. 1.

[0044] Moreover, above the upper surface of the electrode film 208, a dielectric film (electrostatic adsorption member) 209 made of a ceramic material constituting the uppermost surface of the sample stage 120 and the mounting surface on which the wafer 109 is placed is disposed so as to cover the upper surface of the convex portion, the concave portion around it, and the step portion which is the side wall of the convex portion. That is, on the uppermost surface of the sample stage 120, a dielectric film 209 is disposed on the shielding film 206, the dielectric film 209 including an electrode film (electrode) 208 which adsorbs the wafer 109 by electrostatic force and is disposed on the upper part of the shielding film 206. In this example, the dielectric film 140 in FIG. 1 can be regarded as the dielectric films 201, 203, 205, 207, and 209.

[0045] 3, the sample stage 120 has a plurality of through holes (301, 302, 303, 304, 305) penetrating between the upper surface of the dielectric film 209 on the convex portion and the bottom surface of the substrate 108. These through holes include a plurality of lift pin through holes 302 that house lift pins (pins) 311 that move up and down inside to support the wafer 109 from below and move it above the upper surface of the sample stage 120, and a heat transfer gas supply hole 301 through which a heat transfer gas such as He flows to be supplied to the gap between the upper surface of the dielectric film 209 and the back surface of the wafer 109 placed thereon. The lift pins 311 arranged in the lift pin through holes 302 raise or lower the wafer 109 above the upper surface of the dielectric film 209.

[0046] Here, the multiple lift pin through holes 302 open on the upper surface of the dielectric film 209 and penetrate the dielectric film 201, the dielectric film 203, the dielectric film 205 and the dielectric film 206. Inside the sample stage 120, there are arranged an electrostatic attraction power supply hole 303 having a power supply cable and a connector disposed therein for applying power to the electrode film 208, a heater power supply hole 305 having a power supply path 317 and a connector disposed therein for supplying power to the first grid-shaped heater film 202, and a heater power supply hole 304 having a power supply cable 316 and a connector disposed therein for supplying power to the second ring-shaped heater film 204.

[0047] On the inner peripheral wall surface of the portions of these holes (301, 302, 303, 304, 305) that penetrate into the base material 108, insulating bosses 306, 307, 308, 309, 310, which are cylindrical members made of a dielectric material or an insulating material, are disposed. That is, on the base material 108 of the sample stage 120, insulating bosses 306, 307, 308, 309, 310, which are cylindrical members made of an insulating material and disposed inside each of the multiple through holes, are formed.

[0048] These insulating bosses 306, 307, 308, 309, and 310 can suppress the occurrence of discharge in the space inside the hole that is exposed to an electric field due to high frequency power during processing of the wafer 109. The insulating bosses 306, 307, 308, 309, and 310 can be made of ceramic materials such as alumina or yttria, or resin materials.

[0049] In particular, in this embodiment, a plurality of power supply paths for supplying power to a plurality of heater films 202 and an insulating connector 310 made of a dielectric material that surrounds the plurality of power supply paths and insulates each of the power supply paths are disposed in the heater power supply hole 305. The insulating connector 310 is configured by connecting a plurality of cylindrical members in the vertical direction, and a conductive member such as a metal that constitutes the power supply path is disposed inside the plurality of cylindrical members. Furthermore, at least the lower insulating connector 322, which is the lowest member among the insulating members that constitute the insulating boss, is configured to be detachable (attachable and removable) from the bottom (bottom surface) of the base material 108. The lower insulating connector 322 has a cylindrical shape, and is configured so that the power supply path that supplies power to the first grid-shaped heater film 202 is connected or disconnected by attaching or removing the lower insulating connector 322 to or from the bottom of the base material 108. The lower insulating connector 322 can be rephrased as a power supply connector for supplying power to the heater film 202.

[0050] The lower insulating connector 322 is inserted into the heater power supply hole 305 from below, and the bottom surface (lower end) of the upper insulating connector 321 made of an insulator such as ceramics and arranged at the top inside the heater power supply hole 305 faces or comes into contact with the upper surface (upper end) of the lower insulating connector 322. In this state, the lower parts of the multiple power supply pins 320 that penetrate the center of the upper insulating connector 321 are inserted into the multiple insertion holes 318 arranged in the center of the lower connector 322. With the lower parts of the multiple power supply pins 320 inserted into the insertion holes 318 of the lower insulating connector 322, the lower parts of the power supply pins 320 come into contact with and fit into the conductive terminals in the insertion holes 318. This fixes the vertical position of the lower insulating connector 322. The insertion holes 318 can be called through holes.

[0051] In this example, the upper insulating connector 321 is configured by combining three members (an upper insulating sleeve, a screw-in sleeve, and a lower insulating sleeve) on the top and bottom. The uppermost upper insulating sleeve constituting the upper insulating connector 321 has the power feed pin 320 inserted in the center, and while holding the power feed pin 320, is inserted into the upper end of the heater power feed hole 305 of the substrate 108 and fixed in position by adhesive. In this state, the position of the power feed pin 320 is also fixed. For example, a ceramic adhesive can be used as this adhesive, and the upper insulating sleeve and the heater power feed hole 305 are vacuum sealed by the ceramic adhesive. Thereafter, the dielectric film 203 and the heater film 202 are formed by thermal spraying. The power feed pin 320 is configured by a rod-shaped conductive member having a cylindrical shape. The upper end of the power feed pin 320 is configured to be connected to the bottom surface of the first heater film 202 formed on the dielectric film 203.

[0052] The upper insulating sleeve (with the multiple power feed pins 320 held in the center of the upper insulating sleeve) is inserted into heater power feed hole 305, and with the upper insulating sleeve joined to the top of heater power feed hole 305, a cylindrical screw-in sleeve made of an insulating material is inserted into heater power feed hole 305. The screw-in sleeve is then screwed in such that threads formed in advance on the cylindrical side wall surface engage with threads formed on the inner circumferential side wall surface of heater power feed hole 305. The screw-in sleeve is screwed in until the top end of the screw-in sleeve comes into contact with the bottom surface (lower end) of the upper insulating sleeve, whereby the upper insulating sleeve is supported from below by the screw-in sleeve.

[0053] Furthermore, the cylindrical lower insulating sleeve is inserted into the heater power supply hole 305 until the upper end of the lower insulating sleeve comes into contact with the bottom surface (lower end) of the screw-in sleeve. Then, an insulating adhesive is sandwiched between the cylindrical side surface of the lower insulating sleeve and the side wall surface of the inner circumference of the heater power supply hole 305 to bond them. For example, a silicone-based adhesive can be used as the insulating adhesive. In this state, the lower insulating connector 322 is inserted into the heater power supply hole 305 from below. Then, the power supply pin 320 is inserted into the inside of each through hole 318 arranged at an axis-symmetrical position around the axis in the up-down direction in the central region of the circular upper surface of the lower insulating connector 322. Then, the power supply pin 320 comes into contact with a conductive connector terminal arranged inside each through hole 318.

[0054] Each of the connector terminals inside the multiple through holes 318 of the lower insulating connector 322 is connected to a DC power supply 315 via each power supply path 317. The base material 108 connected to the ground electrode S is insulated from the power supply path 317 and the power supply pin 320 by the upper insulating connector 321, an adhesive (silicone-based adhesive in this example), and the lower insulating connector 322. Furthermore, the processing chamber 104 and the inside of the heater power supply hole 305, which is kept at atmospheric pressure or a pressure close to atmospheric pressure, are airtightly partitioned by the adhesive (ceramic-based adhesive in this example) that bonds the upper insulating connector 321 and the base material 108.

[0055] The devices for adjusting the operation of the plasma etching apparatus 100, including the electric field generating power supply 106, the magnetic field generating coil 107, the high frequency power supply 124, the high frequency filter 125, the DC power supply 126, the high frequency power supply 127, the matching boxes 128, 129, the load impedance variable box 130, and other electric field / magnetic field adjusting systems, as well as the DC power supplies 314, 315 for supplying power to the first heater film 202 and the second heater film 204 inside the dielectric film 201, and devices constituting a pressure adjusting system such as a vacuum exhaust device and a mass flow controller for adjusting the amount of gas supplied, which will be described later, each include a detector for detecting the operating state such as output, flow rate, pressure, etc., or a plurality of temperature sensors disposed inside the substrate 108 of the wafer mounting electrode 120, and are connected to the control unit 170 for communication via wire or wirelessly.

[0056] When signals indicating the operating state of each of these devices output from the detectors provided in each of these devices are transmitted to the control unit 170, the calculator of the control unit 170 reads out software stored in the internal storage device of the control unit 170, detects the amount of the state from the signal received from the detector based on the algorithm, calculates and transmits a command signal for adjusting it to an appropriate value. The devices included in the electric field / magnetic field adjustment system, DC power supplies 314, 315, or pressure adjustment system that receive the command signal adjust their operation in response to the command signal.

[0057] Fig. 4 is a diagram showing an example of the arrangement of the second heater film in the sample stage. The heater arrangement 401 shown in Fig. 4 is an example of the arrangement of a plurality of ring-shaped second heater films 204 inside the sample stage 120. Each heater film 204 has a heater wire inside, and the purpose of the heater film 204 is to perform temperature control according to the distribution of reaction products and the distribution of plasma density during plasma processing of the wafer 109.

[0058] The second heater layer 204 includes a plurality of film-shaped heater parts 401H (401H0, 401H1, 401H2, 401H3). The film-shaped heater parts 401H (401H0, 401H1, 401H2, 401H3) are disposed inside the dielectric film (dielectric films 203, 205) above the first heater layer 202, on a plurality of radii in the radial direction from the center (108C) of the upper surface of the base material 108 of the sample stage 120 toward the outer periphery (108P), in three or more radial regions (4R0, 4R1, 4R2, 4R3) including circular regions concentrically disposed around the center and ring-shaped regions surrounding the outer periphery of the circular regions.

[0059] 5 is a diagram showing an example of the arrangement of the first heater film provided on the sample stage of the plasma processing apparatus according to the present embodiment. The film-like first heater film 202 of the present embodiment is a metal film-like heater arranged inside the dielectric film 140 that covers the circular upper surface of the substrate 108 in a plurality of layers, and is arranged in a plurality of regions 501 corresponding to each of the circuit patterns of a plurality of semiconductor devices formed in advance on the upper surface of the wafer 109 placed on the upper surface of the dielectric film 209 when viewed from above. In the substrate 108 of the sample stage 120 having a circular shape, the region 501 is not a perfect rectangular shape at the outer periphery of the upper surface of the dielectric film 201, but has a partially arc-shaped ARC.

[0060] The first heater film 202 is provided to adjust the temperature of each circuit pattern (also called a die or chip area) of a semiconductor device formed on the wafer 109 during plasma processing.

[0061] 5, the first heater film 202 has, in a rectangular region 501, a rectangular outer frame wiring portion 501CL and an internal wiring portion 801 formed inside the outer frame wiring portion 501CL. The internal wiring portion 801 is connected, for example, between a pair of opposing corners (cna, cnc) at the four corners (first corner cna, second corner cnb, third corner cnc, fourth corner cnd) of the outer frame wiring portion 501CL. The pair of corners (cna, cnc) are diagonal corners.

[0062] The internal wiring section 801 is a film-like heater wire, and is configured, for example, by a meandering heater wiring (also called a meander wiring) between a pair of opposing corners (cna, cnc) of the outer frame wiring section 501CL so as to heat the entire region inside the outer frame wiring section 501CL. The outer frame wiring section 501CL has a first side SL1 provided between the first corner cna and the second corner cnb, a second side SL2 provided between the second corner cnb and the third corner cnc, a third side SL3 provided between the third corner cnc and the fourth corner cnd, and a fourth side SL4 provided between the fourth corner cnd and the first corner cna. The first side SL1 and the third side SL3 are provided opposite to each other, a second side SL2 is provided between the first side SL1 and the third side SL3, and a fourth side SL4 is provided opposite to the second side SL2.

[0063] The outer frame wiring portion 501CL of the first heater film 202 has a rectangular shape inside each of a plurality of rectangular regions 501 partitioned into a grid shape by a plurality of first line segments (RL) extending in the front-rear direction at equal intervals in parallel on the upper surface of the dielectric film 201 in correspondence with the shape of the die of the semiconductor device, and a plurality of second line segments (CL) perpendicular to the plurality of first line segments (RL) and extending in the front-rear direction at equal intervals. Note that, at the outer periphery of the upper surface of the dielectric film 201, the region 501 is not a perfect rectangular shape but has a part with an arc-shaped ARC, so that the outer frame wiring portion 501CL is shaped to match the outer shape of the region 501 with the arc-shaped ARC in order to correspond thereto (see FIG. 6 for this).

[0064] The number of regions 501 of the first heater film 202 is greater than the number of regions (4R0, 4R1, 4R2, 4R3 in this example) of the heater arrangement 401 of the second heater film 204 having a plurality of ring shapes as shown in Fig. 4. The number of regions (4R0, 4R1, 4R2, 4R3 in this example) of the heater arrangement 401 is, for example, 3 to 40, while the number of regions 501 can be, for example, 10 to 200. Inside each region 501, a thin metal film constituting the first heater layer 202 is folded back horizontally multiple times along the sides of the rectangular outer shape to form a rectangular film-like heater wire (801).

[0065] By adjusting the power supplied to each of the multiple film heaters (801) formed along the shape of the region 501 corresponding to the die of the semiconductor device during plasma processing, the temperature of the wafer 109 can be accurately adjusted for each location on the upper surface of the wafer 109 corresponding to each die of the semiconductor device of the wafer 109. In particular, by adjusting the temperature according to each die of the semiconductor device to be manufactured, it is possible to reduce variation in the results of the etching process for the wafer 109. Here, the thickness of the film of the multiple film heaters formed by the second heater layer 204 is configured to be larger (thicker) than the thickness of the film of the multiple film heaters 801 formed by the first heater layer 202.

[0066] 5, a plurality of temperature sensors TS are disposed inside the substrate 108 below each heater zone (501) of the first heater film 202 corresponding to the die of the semiconductor device of the wafer 109. The plurality of temperature sensors TS are electrically connected to the control unit 170 by, for example, metal wiring, and the temperature values ​​measured and detected by the plurality of temperature sensors TS are transmitted to the control unit 170 via the metal wiring.

[0067] The control unit 170, which receives the output from the temperature sensor TS, detects the temperature of the upper surface of the substrate 108 or the surface of the dielectric film 201 corresponding to each zone (501) according to a software algorithm stored in an internal storage device. The control unit 170 further adjusts the amount of DC power supplied to the heater wire (801) of each zone (501) according to the software algorithm read out similarly based on the detected temperature, thereby adjusting the heat generation amount of the heater wire (801) of each zone (501) or the heat generation amount on the substrate 108. In other words, the control unit 170 is configured to perform feedback control based on the detected temperatures corresponding to the outputs from the multiple temperature sensors TS so that the heat generation amount of the film-like heater wire (801) constituting the first heater layer (202) of each zone (region 501) or the heat generation amount on the substrate 108 becomes the desired heat generation amount or the desired heat generation amount.

[0068] The heater wire (801) that is feedback controlled is the first heater film 202. The second heater film 204 maintains a predetermined amount of power supply to the heaters of each of the ring-shaped zones (4R0, 4R1, 4R2, 4R3) in which circular or arc-shaped regions are connected as shown in Fig. 4 for each wafer 109 or for each type of film structure on the upper surface of the wafer 109, or for each batch (lot) of a predetermined number of wafers 109. That is, in the plasma processing of any wafer 109, the amount of heat generated by the second heater film 204 is fixed, and the temperature of the first heater film 202 (heater wire 801) is adjusted according to the temperature obtained as an output from the temperature sensor TS. In other words, the control unit 170 adjusts the output of the film-shaped heater 801 arranged within one of the rectangular regions (region 501, CH1-CH4 in Figures 7 and 8) of the first heater layer 202 while maintaining the output of the heater of the second heater layer 204 located above one of the rectangular regions (region 501, CH1-CH4 in Figures 7 and 8) corresponding to the die of the semiconductor device, in accordance with the outputs from the multiple temperature sensors TS.

[0069] Next, a method of arranging the current supply part (601, hereinafter also referred to as the power supply part) and the return part (701, hereinafter also referred to as the current return part) of the first grid-shaped heater (first heater film 202) of this embodiment will be described with reference to Fig. 6. Fig. 6 is a top view showing the first heater film 202 arranged in a plurality of grid-shaped regions on the sample stage according to this embodiment shown in Fig. 5, and the arrangement of the power supply part (601) and the current return part (701) to each first heater film 202. Fig. 6 shows an example of the arrangement of the power supply part (601) and the current return part (701) together with the arrangement of the grid heater (first heater film 202).

[0070] The features of this arrangement method are as follows:

[0071] 1) The connector parts of either the supply section (601) or the feedback point (701) are arranged at the two diagonal corners of each rectangular grid (white circle ○: connection area of ​​the feedback point (701), black circle ●: connection area of ​​the supply section (601)).

[0072] 2) A set of four grid-like regions 501, each of which is adjacent to two other regions belonging to the set with one side of a rectangle facing each other in the front-rear direction (up-down direction in the figure) and the left-right direction (left-right direction in the same direction), is one set (SET1), and each set (SET1) is provided with one current return section 701 and four power supply sections (also called power supply paths) 601. That is, the four grid-like regions 501 are formed by connecting two regions 501 in the front-rear and left-right directions to form a region having a rectangular shape as a whole, and the current return section (also called return path) 701 is arranged at the corner of each of the four grid-like regions 501, which is the center of the entire region, and the power supply section 601 of each region 501 is arranged at the corner diagonally opposite the corner where the current return section 701 is arranged.

[0073] 7, which will be described later, in one set (SET1) including four grids (one grid corresponds to an area 501), a current return section (701) is arranged in the center, and power supply sections (601) are arranged at the four corners. In other words, four film heaters 801 arranged in each of the four areas (CH1-CH4) are treated as one group, and four power supply paths (power supply sections 601) that are electrically connected to one location (A, B, C, D) of each of the film heaters 801 in the group and supply power from the DC power source 315, and one return path (701) that is electrically connected to another location (G) of each of the film heaters 801 and returns power to the DC power source 315 are provided. In other words, one return path (701) is electrically connected to each end of multiple film-shaped heaters 801 arranged in multiple adjacent regions (CH1-CH4), and is configured so that the supplied power returns to the DC power source 315 via each end of the heaters 801 and the substrate 108.

[0074] 3) Therefore, in the first heater film 202 in each region 501, a current flows from a point connected to the connector of the power supply unit 601 arranged at the corner of each of the four regions 501 toward the center or center of the entire region (SET1) of the set of the four regions 501. In other words, as shown by the arrows in Fig. 6, the current flows from the four corners (corners where the power supply units 601 are arranged) toward the center (portion where the current return unit 701 is arranged), or from the corners (power supply units 601) toward the center (current return unit 701), or from the center (current return unit 701) toward the corners (power supply units 601).

[0075] 4) The connector portions of the power supply section 601 and the current return section 701 are alternately arranged at the boundaries (corners) of two areas 501 on the boundaries of the grid in the front-back and left-right directions that divide the areas 501 arranged in a lattice pattern.

[0076] 5) Each of the boundaries that divide the grid-shaped regions 501 in the front-rear and left-right directions is disposed through the center of the upper surface of the circular substrate 108 or the dielectric film 203. However, in the outer peripheral portion of the circular dielectric film 203, four rectangular regions 501, two of which are adjacent to each other, cannot be configured as one set, so three grid-shaped regions 501 are disposed as one set.

[0077] The set of regions 501 or first heater films 202 at such an outer periphery may be composed of two or three. That is, at the outer periphery of the heater where a set (SET1) cannot be formed with four grids, the connector portion of the supply portion 601 and the connector portion of the current return portion 701 are arranged in a set (SET2) of three grids.

[0078] 6) The connector of the current return section (701) is made of a conductive material and is connected to the substrate 108, which is grounded and electrically set to ground potential, by tungsten via wiring. With this configuration, the current supplied to the first heater film 202 flows through the current return section 701 to the substrate 108, which is set to a constant voltage (ground potential).

[0079] By reducing the number of through holes (holes) that accommodate cables constituting a return path for returning the current supplied to the first heater film 202 to the power supply, the number of steps and costs for manufacturing the sample stage 120 or the plasma processing apparatus can be reduced. In other words, since the return current flows through the base material 108, the number of holes required for the return current to be processed in the base material 108 can be reduced. By processing vias on the base material 108 and forming tungsten via wiring between the first heater layer 202 and the base material 108, it becomes possible to collect the return current of the heater wire 801 in the base material 108.

[0080] Next, a configuration for reversing the polarity of the power supply portion 601 of the film-like heater wire 801 constituting the first heater film 202 inside the set (SET1) of four regions 501 will be described with reference to Figures 7 and 8. Figure 7 is a top view showing a schematic outline of the configuration of the first heater film 202 of the set (SET1) of four regions in the sample stage 120 shown in Figure 6. The heater wire (801) of the first heater film 202 in each region 501 is shown enlarged.

[0081] FIG. 8 is a diagram showing a schematic diagram of a current flowing through the first heater film 202 between the power supply section 601 and the current return section 701 in the set (SET1) of four regions shown in FIG. 7. FIG. 8 shows an equivalent circuit diagram in which the four heater wires 801 shown in FIG. 7 are rewritten as four resistance elements (R1, R2, R3, R4). FIG. 8 also shows the relative magnitude of the potential of the power supply section 601 with respect to the potential of the current return section 701 (ground potential in this embodiment) as positive and negative polarities. In FIG. 8, the positive and negative signs (+, -) and arrangement show that the potential of the power supply section (601) is higher than the potential of the return section 701 with "+" and lower with "-".

[0082] As shown in Figures 7 and 8, one set (SET1) is composed of four grids, and the four grids are composed of four regions (CH1, CH2, CH3, CH4) corresponding to four dies of a semiconductor device. One set (SET1) is rectangular in plan view and has four corners (A, B, C, D) and a center point (G). The four corners (A, B, C, D) are arranged in the order of a first corner A, a second corner B, a third corner C, and a fourth corner D in a clockwise direction in plan view.

[0083] Here, the first corner A and the third corner C correspond to a pair of opposing corners, and the second corner B and the fourth corner D correspond to another pair of opposing corners.

[0084] The first region CH1 is disposed in a rectangular portion between a first corner A and a center point (G). A power supply unit 601 is disposed in the first corner A, and a current return unit 701 is disposed in the center point (G). A heater wire (801) is connected between the power supply unit 601 in the first corner A and the current return unit 701 in the center point (G).

[0085] The second region CH2 is disposed in a rectangular portion between the second corner B and the center point (G). A power supply unit 601 is disposed in the second corner B. A heater wire (801) is connected between the power supply unit 601 at the second corner B and the current return unit 701 at the center point (G).

[0086] The third region CH3 is disposed in a rectangular portion between a third corner C and the center point (G). A power supply unit 601 is disposed in the third corner C. A heater wire (801) is connected between the power supply unit 601 in the third corner C and the current return unit 701 in the center point (G).

[0087] The fourth region CH4 is disposed in a rectangular portion between the fourth corner A and the center point (G). The power supply unit 601 is disposed in the fourth corner D. A heater wire (801) is connected between the power supply unit 601 in the fourth corner D and the current return unit 701 in the center point (G).

[0088] The first region CH1 and the second region CH2 are arranged rotationally symmetrically with respect to the center point (G). Similarly, the first region CH1 and the third region CH3, and the first region CH1 and the fourth region CH4 are also arranged rotationally symmetrically with respect to the center point (G). In other words, the four first to fourth regions (CH1-CH4) are arranged with one side of each rectangle facing the adjacent region.

[0089] In other words, when viewed from above, the current return section 701, which is a return path, is disposed at a location (G) where the four corners of each of the four mutually adjacent rectangular regions (CH1-CH4) are adjacent to each other. Then, in each of the four rectangular regions (CH1-CH4), the power supply section (601), which is a power supply path, is connected to the corners (A, B, C, D) diagonally opposite the corner to which the return path (701) is connected.

[0090] FIG. 9 is a schematic diagram showing the relationship between the four corners (first corner cna, second corner cnb, third corner cnc, fourth corner cnd) and four sides (first side SL1, second side SL2, third side SL3, fourth side SL4) of the rectangular region 501 described in FIG. 5 and the four regions (first region CH1, second region CH2, third region CH3, fourth region CH4) of FIG. 7.

[0091] The second region CH2 is disposed by rotating the first region CH1 90 degrees to the right with respect to the center point (G) or the third corner cnc, so that the second side SL2 of the first region CH1 and the third side SL3 of the second region CH1 overlap. Similarly, the third region CH3 is disposed by rotating the second region CH2 90 degrees to the right with respect to the center point (G), so that the second side SL2 of the second region CH1 and the third side SL3 of the third region CH3 overlap.

[0092] The fourth region CH4 is disposed by rotating the third region CH3 90 degrees to the right with respect to the center point (G), so that the second side SL2 of the third region CH1 overlaps with the third side SL3 of the fourth region CH3, and the second side SL2 of the fourth region CH1 overlaps with the third side SL3 of the first region CH3.

[0093] That is, the four first to fourth regions (CH1-CH4) are arranged with one side of the rectangle (the second side SL2 and the third side SL3) facing the adjacent region (the first region CH1 and the second region CH2, the second region CH2 and the third region CH3, the third region CH3 and the fourth region CH4, and the fourth region CH4 and the first region CH1). The center point (G) is adjacent to the third corners cnc of the four regions (the first region CH1, the second region CH2, the third region CH3, and the fourth region CH4).

[0094] As shown in FIG. 8, the potential of at least one of the connector parts of the power supply part 601 located at the diagonal corners (B, D) of the corners (A, B, C, D) of each of the four areas 501 in which the current return part 701 is arranged is set to a negative potential (-) with respect to the connector part of the current return part 701 set to the ground potential (0V). In this embodiment, the polarity of the potential of the connector part set to a positive potential (+) value in two power supply parts 601 is set to a negative potential (-) value obtained by inverting the polarity of the potential of the connector part in the other two power supply parts 601. In other words, the potential of at least one point (A, B, C, or D) where each film heater (801) is connected to each of the power supply parts (601) that are four power supply paths is made lower (negative potential (-)) than the potential (0V: ground potential) of the point (G) where each film heater (801) is connected to one return path (701).

[0095] As a result, in the set (SET1) of four grids, the current (I1, I3) flowing from the power supply unit 601 set to a positive potential (+) through the first heater film 202 (heater wire 801: resistive elements R1, R3) to the current return unit 701 and the current (I2, I4) flowing from the current return unit 701 through the first heater film 202 (heater wire 801: resistive elements R2, R4) to the power supply unit 601 set to a negative potential (-) are at least partially offset. This makes it possible to reduce the current flowing through the return path from the current return unit 701 to the power source. This reduces the size of the return path, and suppresses an increase in the volume of the sample stage 120.

[0096] Next, a case where the number of power supply sections (601) whose polarity is to be reversed (the number of power supply sections (601) whose polarity is to be reversed (the number of power supply sections (601) whose polarity is to be reversed) in a set (SET1) of four grid regions 501 (the number of power supply sections (601) whose polarity is to be reversed (the number of power supply sections (601) whose polarity is to be reversed)) is equal (the number of power supply sections (601) whose polarity is to be reversed) (the number of power supply sections (601) whose polarity is to be reversed) is equal (the number of power supply sections (601) whose polarity is to be reversed)). In FIGS. 6 and 8, the direction of the arrow ARM in the drawings indicates the direction of current flow, and the symbols of electrical resistance are omitted as appropriate in FIG. 6. In the example of FIGS. 7 and 8, in the set (SET1) of four regions 501, the number (2) of power supply sections 601 whose polarity is to be reversed (the number of power supply sections (601) whose polarity is to be reversed) in a set (SET1) of four grid regions 501 is set to 2, the same as the number (2) of power supply sections 601 whose polarity is to be reversed (the number of power supply sections (601) whose polarity is to be reversed).

[0097] In such a configuration, it is possible to reduce the return current of the current return section (701) under processing conditions in which the distribution of temperature values ​​during processing of the areas of the die of the semiconductor device on the wafer 109 corresponding to each grid-like area 501 shown in Figures 5 and 6 has rotational symmetry with respect to the center point 108C of the substrate 108.

[0098] This is because, when the temperature conditions during processing of the wafer 109 have rotational symmetry, the amount of heat generated by the first heater film 202, which is adjusted for each region 501, also needs to have rotational symmetry in order to realize the temperature distribution by heating the wafer 109. Also, when the thermal resistivity of the heater wire 801 of the first heater film 202 is equal between the regions 501 or is close enough to be considered equal, the current flowing through the first heater film 202 in each region 501 also needs to have similar rotational symmetry.

[0099] That is, a set (SET1) of four grid-like regions 501 is arranged with rotational symmetry with respect to the center (G). In this configuration, if the number of power supply units 601 (the number of positive potentials (+)) is equal to the number of power supply units 601 that are not inverted (the number of negative potentials (-)), the magnitudes of the currents (I1, I2, I3, I4) flowing through the heater wires 801 located at positions that are line-symmetric or point-symmetric with respect to the center point G (current return unit 701) are equal, and it is guaranteed that the apparent current flowing through the substrate 108 is half that in the case where the polarity is not inverted.

[0100] Furthermore, under conditions where the surface temperature of the base material 108 is uniform over the entire surface (hereinafter referred to as flat temperature conditions), the currents flowing in the set of four grids (SET1) are uniform, and no current flows in the current return section 701.

[0101] In addition, in the outer peripheral portion 108P, even in the heater wires 801 at the ends of the electrode where three current return portions 701 are common, the temperatures of the heater wires 801 become almost equal under flat temperature conditions or temperature conditions where the temperature near the center of the electrode is high. In this case, it is expected that the return current of the current return portion 701 can be suppressed to about one third compared to the case where the polarity is not reversed.

[0102] If polarity reversal is not performed, the current flowing through the substrate 108 increases with an increase in the number of heater wires 801. Joule heat is generated in the substrate 108 in proportion to the square of the magnitude of the current flowing through the substrate 108, affecting the temperature control of the wafer 109. Alternatively, a risk of electric shock may be expected due to a large amount of current flowing through the substrate 108.

[0103] The details of the configuration of the power supply unit 601 and the insulating connector thereunder will be described with reference to Figs. 10 and 11. Fig. 10 is a plan view showing the arrangement of heaters, power supply units, and return units in a plurality of adjacent regions arranged on the upper surface of the sample stage according to the present embodiment. For reference, Fig. 10 shows the reference symbols of the four first to fourth regions (CH1-CH4) shown in Figs. 7, 8, and 9, and the corresponding relationship with the first to fourth regions (CH1-CH4) shown in Fig. 9. The explanation of Fig. 9 can be referred to for the sides, corners, and layout arrangement of the first to fourth regions (CH1-CH4) shown in Fig. 10, so that the overlapping explanation will be omitted. In Fig. 10, the portion where the corners A, B, C, and D of the first to fourth regions (CH1-CH4) are butted together is the power supply unit 601. A heater power supply hole 305 having an opening on the bottom surface of the substrate 108 is provided below the power supply section 601, and a lower insulating connector 322 is inserted into this heater power supply hole 305 and attached, so that power is supplied to multiple film-like heater wires 801 arranged in the first to fourth regions (CH1-CH4) via the lower insulating connector 322.

[0104] As shown in Fig. 10, the first heater film 202 (heater wire 801) of this embodiment is disposed on the dielectric film 201 and inside the dielectric film 203, with the heater wire 801 having a predetermined width being arranged back and forth along the sides of the rectangle over almost the entire area of ​​the rectangular area. At the places where the four corners (corresponding to the corners A, B, C, and D shown in Figs. 7, 8, and 9) of the rectangular area where the first heater film 202 is disposed are butted together, one end of each of the heater wires 801 in the four areas is disposed, and below the places, a power supply unit 601 is disposed, in which a power supply pin 320 (not shown) (see Fig. 3) is connected to one end of each of the heater wires 801. Power is supplied from a DC power source 315 to each heater wire 801 through one end from the power supply unit 601.

[0105] The four power feed pins 320 are fixed and arranged symmetrically about the vertical central axis of cylindrical upper insulating connector 321, which is arranged at the top of heater power feed hole 305, and the lower end of each power feed pin 320 protruding below upper insulating connector 321 is inserted into four through holes 318 arranged symmetrically about the central axis of lower insulating connector 322 and connected to terminals, with cylindrical lower insulating connector 322 inserted into heater power feed hole 305 from below. Each power feed pin 320 is electrically connected to DC power supply 315 through a terminal in through hole 318.

[0106] Thus, in power supply unit 601, each power supply pin 320 is connected to one end of each heater wire 801 in four different regions arranged with corners butted together to supply DC power. Each of these four regions (first region to fourth region: CH1-CH4) has a different set of heaters to which the internal heater wire 801 belongs, and one power supply unit 601 has a configuration in which it can supply power to four different sets of heaters when power supply pin 320 is inserted into through hole 318.

[0107] The structure below the base material 108 of the sample stage 120 according to the present embodiment will be described with reference to Fig. 11. Fig. 11 is a vertical cross-sectional view showing a schematic outline of the structure below the sample stage of the plasma processing apparatus according to the embodiment shown in Fig. 1. Below the sample stage 120, a space is arranged in which a power supply path to the heater films 202, 204 is arranged. This space is hermetically sealed and partitioned from the processing chamber 104, communicates with the space outside the plasma processing apparatus 100, and is maintained at atmospheric pressure or approximately atmospheric pressure.

[0108] The lower end of the lower insulating connector 322 is connected to the tip of a flexible printed circuit (hereinafter referred to as FPC) 1002 having a plurality of power supply wirings 1008 for the heater film 202 therein. The FPC 1002 connected to the circular bottom surface of the lower end of each cylindrical lower insulating connector 322 has a plurality of arms 1200 extending in the horizontal direction (up and down direction in the figure) with a predetermined width. Each of the plurality of arms 1200 is mainly provided between the lower end of the corresponding lower insulating connector 322 and the corresponding collective connector 1007, and is arranged so as to extend along the bottom surface of the base material 108. The flexible printed circuit 1002 can be said to be a wiring member composed of a plate-shaped member made of resin, and has a plurality of power supply wirings 1008 inside to which power for the heater film 202 is supplied from a DC power source 315. Therefore, the multiple film-like heater wires 801 arranged in the multiple regions, the first region to the fourth region CH1-CH4, are electrically connected to each of the multiple power supply wirings 1008 of the flexible printed wiring board 1002 via the lower insulating connector 322, which is a power supply connector.

[0109] 3, the bottom surface of the base material 108 of the sample stage 120 is provided with a plurality of through holes (e.g., thermally conductive gas supply hole 301, lift pin through hole 302, electrostatic attraction power supply hole 303, heater power supply hole 304 of the second heater film 204, through holes through which detection wiring of the plurality of temperature sensors TS passes, etc.). Therefore, the power supply wiring to the lower insulating connector 322 provided in the plurality of power supply units 601 needs to be provided while bypassing the installation area of ​​the plurality of through holes provided in the bottom surface of the base material 108. The plurality of arm portions 1200 of the flexible printed wiring board 1002 has the effect of easily enabling the bypassing of the installation area of ​​the plurality of through holes.

[0110] The width of the arm 1200, when viewed from above, is, for example, slightly smaller than the diameter of one of the lower insulating connectors 322. The upper surface of the tip of a corresponding one of the arm 1200 is joined to the bottom surface of the corresponding lower insulating connector 322. Since one lower insulating connector 322 has four through holes 318 into which four power feed pins 320 are inserted, the power feed wiring 1008 arranged inside the FPC 1002 corresponding to the arm 1200 is electrically connected, with the four power feed wirings as one set, to each terminal that engages with and contacts the power feed pins 320 arranged inside each of the four through holes 318.

[0111] The other ends of the multiple power feed wirings 1008 arranged inside each of the multiple arm portions 1200 are connected to each of the multiple power feed lines arranged inside an aggregate connector 1007 arranged in the center in contact with the bottom surface of the FPC 1002. Inside the aggregate connector 1007, multiple power feed lines are grouped together as a group, with their upper ends connected to the power feed wirings 1008 arranged inside the multiple arm portions 1200 and extending in the vertical direction. The lower ends of the multiple power feed lines form a connector portion at the bottom of the aggregate connector 1007 that is connected to a power feed path 317 that electrically connects these power feed lines to a DC power source 315, and another connector that forms the tip of the power feed path 317 is connected to this connector portion.

[0112] In the first heater film 202, the heater wires 801 arranged over almost the entire rectangular region are basically grouped into four groups in the central part of the upper surface of the sample stage 120, and two or three groups in the peripheral part have a common return part 701 (see FIG. 6). In FIG. 10, the power supply part 601 is arranged at the point where the corners (C, D, B, A) of the four regions 802A to 802D of each rectangular first heater film 202 are butted together, and the upper insulating connector 321, the lower insulating connector 322, and the four power supply pins 320 are arranged below the power supply part 601. The upper insulating connector 321 is connected to the power supply parts 601 of the multiple first heater films 202, and the lower insulating connector 322 connected to the upper insulating connector 321 is connected above the tip of the arm part 1200 of the FPC 1002. The number of arms 1200 of the FPC 1002 is the same as the number of lower insulating connectors 322. In addition, the number of arms 1200 of the FPC 1002 is the same as the number of upper insulating connectors 321.

[0113] 10, the regions 802A (CH4), 802B (CH3), 802C (CH2), and 802D (CH1) and the heater wires 801A, 801B, 801C, and 801D arranged therein belong to different heater groups. The power supply path insulated from the substrate 108 by the upper insulating connector 321 connected to the power supply unit 601 and the connected lower insulating connector 322 is connected to a different heater group.

[0114] As shown in the figure, arm portion 1200 of FPC 1002 is disposed below the bottom surface of substrate 108 and extends along the surface. An assembly connector 1007 having a predetermined height and in contact with the lower surface of FPC 1002 is disposed below the center of FPC 1002. Assembly connector 1007 is connected to another connector (not shown) that constitutes power supply path 317, thereby electrically connecting power supply unit 601 and DC power supply 315 with lower insulating connector 322 connected to upper insulating connector 321.

[0115] Insulating plates 1003 and 1004 are disposed between the FPC 1002 and the bottom surface of the substrate 108 above, and between the FPC 1002 and a universal plate 1006 made of a conductor such as metal disposed below. The insulating plates 1003 and 1004 cover the FPC 1002, and prevent electrical contact between the substrate 108 and the universal plate 1006 and the FPC 1002 and the lower insulating connector 322. The upper insulating plate 1003 has through holes 1011 disposed at positions corresponding to the heater power supply holes 305. The lower insulating connector 322 joined to the tip of the arm portion 1200 of the FPC 1002 is inserted into the heater power supply hole 305 through the through hole 1011 from the lower side of the bottom surface of the insulating plate 1003 attached to the bottom surface of the substrate 108.

[0116] Each of the insulating plates 1003 and 1004 is a circular plate-like member, and the insulating plates 1003 and 1004 are configured to be connectable in the vertical direction. At least one of the opposing surfaces of the insulating plates 1003 and 1004 has a recess so that a gap 1005 is formed in the region of the connection of the insulating plates 1003 and 1004 when the insulating plates 1003 and 1004 are connected. When the insulating plates 1003 and 1004 are connected, the FPC 1002 and the arm portion 1200 are accommodated in the gap 1005 formed between the insulating plates 1003 and 1004. The height of the lower insulating connector 322 is configured to protrude from the bottom surface of the base material 108 when connected to the upper insulating connector 321, and is at least greater than the vertical length of the through hole 1011 of the upper insulating plate 1003, i.e., the thickness of the FPC 1002.

[0117] Furthermore, a through hole 1012 is disposed in the center of the lower insulating plate 1004. With the insulating plates 1003 and 1004 connected, an assembly connector 1007 connected to the underside of the center of the FPC 1002 sandwiched between the insulating plates 1003 and 1004 is inserted into the through hole 1012. The lower end of the assembly connector 1007 may protrude below the universal plate 1006 through the through hole 1012.

[0118] The insulating plate 1004 sandwiches the FPC 1002 between the insulating plate 1003, covers the FPC 1002 from below, and is attached to the insulating plate 1003 or the base material 108. This allows the FPC 1002 to be held inside a gap 1005 that has a height slightly greater than the vertical thickness of the FPC 1002. This suppresses vertical movement of the FPC 1002, particularly vertical movement of the lower insulating connector 322 joined to the tip of the arm 1200. This reduces unintended breaking of the engagement or connection of the lower insulating connector 322 with the power feed pin 320.

[0119] Furthermore, a universal plate 1006 is provided. The universal plate 1006 is disposed below the base material 108 and the insulating plates 1003 and 1004, and is configured to have a disk shape in which the peripheral portion of the upper surface of the universal plate 1006 is connected to the peripheral portion of the bottom surface of the base material 108. The upper end of the outer peripheral portion of the upper part of the universal plate 1006 is attached to the outer peripheral portion of the bottom surface of the base material 108 with a seal member such as an O-ring sandwiched therebetween, and the space inside the processing chamber 104 is airtightly sealed. Furthermore, in a state in which the universal plate 1006 is attached to the base material 108, a cylindrical recessed portion that forms a gap 1010 is provided in the center of the upper surface of the universal plate 1006. The cylindrical recessed portion that forms the gap 1010 is configured to accommodate the insulating plate 1003 attached to the bottom surface of the base material 108 and the insulating plate 1004 in a state in which the FPC 1002 is held within the gap 1005.

[0120] The outer peripheral edge of the bottom surface of the universal plate 1006 is attached by sandwiching a seal member such as an O-ring between it and a member of the plasma etching apparatus 100 having a circular shape and disposed below the sample stage 120, and the space inside the processing chamber 104 is airtightly sealed. A recess 1009 recessed upward is disposed in the center of the bottom surface of the universal plate 1006, and a power supply path to the heater film 204, a connector of a power supply path to the electrode film 208, and a temperature sensor for detecting a local temperature of the substrate 108 are attached to the bottom surface (recess 1009) of the universal plate 1006. The power supply path to the heater film 204, the connector of the power supply path to the electrode film 208, and the temperature sensor for detecting a local temperature of the substrate 108 are inserted into the substrate 108 through the universal plate 1006 and the insulating plates 1003 and 1004. The space below the sample stage 120, which the bottom surface of the universal plate 1006 faces, is a space kept at atmospheric pressure or a pressure close to it, and the inside of the gap 1005 and the heater power supply hole 305 connected to this space are also kept at an equivalent pressure.

[0121] A through hole 1013 is arranged in the center of the upper part of the universal plate 1006, and with the universal plate 1006 connected to the base material 108, an assembly connector 1007 connected to the lower surface of the center part of the FPC 1002 is inserted into the inside of the through hole 1013. The lower end of the assembly connector 1007 may protrude downward from the lower end of the through hole 1013. Another connector constituting the power supply path 317 is connected to the assembly connector 1007 in a recess 1009 of the universal plate 1006.

[0122] An example of the configuration of the FPC 1002 will be described with reference to Fig. 12. Fig. 12 is a perspective view that shows a schematic outline of the overall configuration of the FPC according to the embodiment shown in Fig. 11. Fig. 12 shows an example of the configuration of the FPC 1002, but the configuration of the FPC 1002 is not limited to that shown in Fig. 12. A plurality of sets, for example, two, three, or four sets of the FPC 1002 (including the multiple arms 1200) and the assembly connector 1007 may be provided for one base material 108 of the sample stage 120.

[0123] In order to provide the power supply wiring while bypassing the installation area of ​​the multiple through holes (vertical hole structures provided in the substrate 108, such as the heat conductive gas supply hole 301, the lift pin through hole 302, the electrostatic adsorption power supply hole 303, the heater power supply hole 304 of the second heater film 204, and the through holes through which the detection wirings of the multiple temperature sensors TS are passed) provided on the bottom surface of the substrate 108, and also in order to avoid a T-shaped power supply wiring structure (a power supply wiring structure in which the power supply wiring does not have a branch portion), it is preferable to provide multiple sets of the FPC 1002 (including the multiple arm portions 1200) and the collective connector 1007 for one substrate 108.

[0124] As described above, the FPC 1002 has a plurality of arms 1200 (1201 to 1207) (seven arms are shown in FIG. 12 as an example). The arms 1201 to 1207 extend from the center of the bottom surface of the FPC 1002 toward its outer periphery, and each has a predetermined width. A cylindrical lower insulating connector 322 is connected to the upper surface of the tip of each of the arms 1201 to 1207. In this example, seven lower insulating connectors 322 of the same size and shape are connected to the tip of each of the arms 1201 to 1207. The heater power supply hole 305 and the through hole 1011 into which the lower insulating connectors 322 are inserted have the same diameter and depth, and the upper insulating connector 321 that contacts the lower insulating connector 322 also has the same size and shape.

[0125] A collective connector 1007 is connected to the underside of the center of the FPC 1002, and the collective connector 1007 protrudes downward (upward in the figure) at a predetermined height from the underside of the FPC 1002. A recess 1009 is formed on the inside of the lower part of the collective connector 1007, and the collective connector 1007 may protrude into the recess 1009.

[0126] The upper ends of a plurality of terminals TT arranged in parallel in the up-down direction at a distance in the left-right and front-rear directions inside the collective connector 1007 or the wires connected to the terminals TT are connected to respective ends of a plurality of power supply wires 1008 built into the FPC 1002 inside the FPC 1002 above the upper end of the collective connector 1007. Each of the multiple power supply wires 1008 is arranged inside each of the arms 1201-1207, and the other ends of the power supply wires 1008 are electrically connected to respective terminals housed inside a plurality of through holes 318 of the lower insulating connector 322 connected to the ends of the arms 1201-1207.

[0127] In this embodiment, the FPC 1002 is inserted through the through hole 1011 formed at the corresponding position with the upper and lower axes aligned with the heater power supply hole 305, with the upper insulating plate 1003 connected to the bottom surface of the base material 108 sandwiched therebetween. The arms 1201-1207 of the FPC 1002 and the center of the FPC 1002 are made of a plate-shaped resin member including a plurality of power supply wirings 1008 therein and having a horizontal (left and right) width sufficiently larger than the thickness in the vertical (up and down) direction intersecting the horizontal direction. Therefore, when the lower insulating connector 322 is inserted into the corresponding heater power supply hole 305, the plate-shaped arms 1201-1207 with the lower insulating connector 322 connected thereto and having a small thickness (thin thickness) extend from the center of the FPC 1002 along the insulating plate 1003 or 1004, or the bottom surface of the base material 108.

[0128] On the other hand, at least the arms 1201-1207 of the FPC 1002 have relatively large flexibility or can be bent in the vertical direction. On the other hand, if any of the arms 1201-1207 is bent in the horizontal direction, a twist may occur in any of the arms 1201-1207, causing the twisted arms 1201-1207 to roll up, increasing the vertical height occupied by the arms 1201-1207.

[0129] In this embodiment, lower insulating connector 322 having a cylindrical shape has a plurality of through holes 318 (see Figs. 11 and 13) with terminals built in, and through holes 318 are arranged symmetrically around the central axis in the up-down direction. Therefore, there are four possible positions around the central axis at which lower insulating connector 322 can be inserted into heater power feed hole 305 and connected to power feed pin 320 held by upper insulating connector 321. When lower insulating connector 322 is correctly electrically connected to FPC 1002, if lower insulating connector 322 is inserted into heater power feed hole 305 and power feed pin 320 is inserted into an incorrect position around the axis inside heater power feed hole 305, arms 1201-1207 of FPC 1002 to which lower insulating connector 322 is connected at its tip are turned up, and it is easy to visually determine whether the connection is correct or not.

[0130] Fig. 13 shows in detail the connection between the lower power supply connector 322 and the tip of the arm of the FPC 1002. Fig. 13 is a perspective view showing a schematic outline of the configuration of the tip of the arm of the FPC according to the embodiment shown in Fig. 11. Fig. 13 shows an enlarged view of one of the arms 1201 to 1207 shown in Fig. 12 (here, as a representative example, the lower insulating connector 322 at the tip of the arm 1201 is shown enlarged).

[0131] As described above, the lower insulating connector 322 has four through holes 318 that penetrate between the circular upper and lower surfaces in the vertical direction and are arranged symmetrically around the central axis, and each of the through holes 318 has a socket 1301 press-fitted therein as a terminal to which the power feed pin 320 is connected when it is inserted. In addition, a groove 1302 is formed in the circumferential direction at the bottom of the cylindrical outer circumferential side wall of the cylindrical lower insulating connector 322, and when the power feed pin 320 is inserted inside the heater power feed hole 305 and in contact with the upper insulating connector 321, the bottom end of the lower insulating connector 322 including the groove 1302 protrudes below the bottom end of the through hole 1011 of the insulating plate 1003 at the top below the substrate 108. With this configuration, an operator can easily insert the lower insulating connector 322 into the heater power feed hole 305 and remove the lower insulating connector 322 from the heater power feed hole 305 by hooking a finger or a tip of a nail into the groove 1302.

[0132] 13, the configuration of arm 1201 out of the seven is shown as a representative example. The other arms 1202-1207 have the same configuration as arm 1201 shown in FIG. The arm 1201 is made of a resin member such as polyimide formed into a film shape, and inside the arm 1201, a plurality of (four in this example) power supply wires 1008 are arranged at a predetermined distance L2 in the longitudinal direction (extension direction) of the power supply wires 1008, left and right (or horizontal direction with respect to the bottom surface of the substrate 108), and are sandwiched between resin members above and below. The line width L1 of each of the plurality of power supply wires 1008 is selected so as to ensure sufficient current resistance performance. The plurality of power supply wires 1008 may also be formed by stacking in the vertical direction so as to have a line width L1 (=L3+L3) that ensures sufficient current resistance performance. One end 8A of each power supply wire 1008 is connected to each socket 1301 by soldering.

[0133] Fig. 14 is a plan view showing a schematic outline of the configuration of an FPC according to a modified example. Fig. 14 exemplarily shows a configuration example of the back surface of a base material 108 in a case where three sets of an FPC 1002 (including a plurality of arms) and an assembly connector 1007 are provided for one base material 108 of a sample stage 120. As shown in Fig. 14, a plurality of lower insulating connectors 322 fitted into heater power supply holes 305, three assembly connectors 1007, a plurality of return portions 701, and three lift pin through holes 302 are provided on the back surface of the base material 108.

[0134] The multiple lower insulating connectors 322 include a lower insulating connector 322 (first lower insulating connector 322: four small circles are arranged in one circle) in which four power feed pins 320 are arranged, and a lower insulating connector 322 (second lower insulating connector 322: two small circles are arranged in one circle) in which two power feed pins 320 are arranged. The second lower insulating connector 322 is mainly arranged on the periphery of the substrate 108. A plurality of thick lines arranged between the collective connector 1007 and the lower insulating connector 322 correspond to a plurality of arms 1200 of the FPC 1002. In this example, one collective connector 1007 is connected to 20 heater wires 801, and three collective connectors 1007 are configured to be able to control the temperature of 60 heater wires 801 provided in 60 regions.

[0135] 14, a plurality of thick lines indicating a plurality of arms 1200 of the FPC 1002 disposed between the collective connector 1007 and the lower insulating connector 322 are disposed so as to bypass (avoid) the arrangement areas of the lift pin through holes 302 and the return portion 701 provided in the base material 108. In other words, the planar layout arrangement of the plurality of arms 1200 of the FPC 1002 is determined so as to bypass (avoid) the arrangement areas of the plurality of through holes (e.g., the thermally conductive gas supply hole 301, the lift pin through hole 302, the electrostatic attraction power supply hole 303, the heater power supply hole 304 of the second heater film 204, the through holes through which the detection wirings of the plurality of temperature sensors TS are passed) provided in the bottom surface of the base material 108, and so as to prevent the arms 1200 from intersecting with each other, and the planar layout arrangement of the wiring area is determined. Since the planar layout of the multiple through holes provided in the bottom surface of the base material 108 is known, the planar layout of the multiple arm portions 1200 of the FPC 1002 can be determined relatively easily and at low cost.

[0136] This makes it possible to safely, easily and at low cost produce power supply wiring to the electrodes of each heater layer (heater wire) 801 in a multi-zone (a zone configuration of the substrate 108 in which multiple sets of one set each of the first region CH1 to the fourth region CH4 are provided). [Industrial Applicability]

[0137] The present disclosure is applicable to a plasma processing apparatus that processes a sample using plasma while adjusting the temperature of the sample. [Explanation of symbols]

[0138] 101: vacuum vessel, 104: processing chamber, 108: substrate, 109: wafer, 120: sample stage, 140: dielectric film, 202: heater film 202, 305: heater power supply hole, 315: DC power supply, 317: power supply path, 318: through hole, 320: power supply pin, 321: upper insulating connector, 322: lower insulating connector, 601: power supply section, 701: return section, 801: heater, 1002: FPC, 1003, 1004: insulating plates, 1006: universal plate, 1007: collective connector.

Claims

1. a processing chamber disposed within the vacuum vessel, the processing chamber having a wafer to be processed disposed therein and in which plasma is generated; a cylindrical sample stage disposed within the processing chamber and on whose upper surface the wafer is placed; the sample stage includes a disk-shaped substrate, a dielectric film covering an upper surface of the substrate, and a heater layer disposed inside the dielectric film; the heater layer includes a plurality of film heaters arranged in each of a plurality of rectangular regions; Each of the plurality of regions is disposed such that one side of the rectangular shape faces an adjacent region, a power supply connector having a cylindrical shape that is attached to and detached from the bottom of the base material; the power supply connector is configured to be electrically connected to one location of each of the plurality of film heaters arranged in each of the plurality of regions to supply power from a DC power source; a wiring member including a plurality of wires to which the power is supplied and made of a resin plate-like member connected to a bottom of the power supply connector; The wiring member has an arm portion extending along a bottom surface of the base material.

2. 2. The plasma processing apparatus according to claim 1, the power supply connector is inserted into a hole having an opening in a bottom surface of the base below a point where corners of the adjacent regions are butted together with sides of the rectangular shape facing each other, and the film heaters arranged in the multiple regions are electrically connected to each of the multiple wirings via the power supply connector.

3. 3. The plasma processing apparatus according to claim 2, the power supply connector is electrically connected to each of the plurality of film heaters when inserted into the hole, and the power supply connector has a plurality of terminals connected to a plurality of pins arranged axially symmetrically around a central axis of the hole.

4. 4. The plasma processing apparatus according to claim 2, The plurality of regions is four regions, a power supply connector disposed below a point where the corners of the four adjacent regions are butted together with the sides of the rectangular shape facing each other, and each of the film heaters disposed in each of the four regions is electrically connected to each of the plurality of wirings.

5. 4. The plasma processing apparatus according to claim 2, A plasma processing apparatus comprising: a return path electrically connected to each end of the plurality of film heaters arranged in the plurality of adjacent regions, the return path allowing the supplied power to return to the DC power supply via the end and the substrate.

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