Method for evaluating eccentricity of substrate placement position in epitaxial growth apparatus and method for manufacturing epitaxial wafer using said evaluation method

Abstract

To provide a method capable of evaluating the eccentricity of a substrate placing position in a high-temperature state at epitaxial growth with ease even when using a general susceptor without requiring additional facilities nor reconstruction of a device.SOLUTION: A method of evaluating the eccentricity of a substrate placing position includes: a pre-epitaxial growth flatness evaluation step; a wafer placing step; an epitaxial growth step; a post-epitaxial growth flatness evaluation step; a shape profile acquisition step of subtracting a flatness of a wafer surface obtained at the pre-epitaxial growth flatness evaluation step from a flatness of the epitaxial wafer obtained at the post-epitaxial growth flatness evaluation step to acquire an epitaxial film thickness shape distribution in a radial direction of the epitaxial wafer; and an eccentricity calculation step of calculating the eccentricity of the substrate placing position of an epitaxial growth device on the basis of the epitaxial film thickness shape distribution.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a method for evaluating the amount of eccentricity of a substrate placement position in an epitaxial growth apparatus and a method for manufacturing an epitaxial wafer using the evaluation method. [Background technology]

[0002] Semiconductor wafers are obtained by growing single crystals using the Czochralski method (CZ method) or other methods, cutting the single crystals into blocks, slicing them thinly, and then going through a surface grinding (lapping) process, an etching process, a mirror polishing process, and a final cleaning process. After that, various quality inspections are carried out, and if no abnormalities are found, the product is shipped.

[0003] Here, when greater crystal perfection is required or when a multi-layer structure with different resistivities is required, epitaxial wafers are manufactured by vapor-phase growth (epitaxial growth) of an epitaxial layer made of a single crystal silicon thin film on the surface of the wafer. Epitaxial growth is widely performed on semiconductor wafers such as Si, SiC, and GaAs.

[0004] The epitaxial growth apparatus supplies a reactive gas from a reactive gas supply means into a chamber in a state insulated from the outside air, and processes a substrate on a susceptor supported by a support shaft disposed in the chamber, thereby growing an epitaxial layer on the surface of the substrate. During the growth of the epitaxial layer, the support shaft supporting the susceptor rotates, thereby rotating the substrate.

[0005] The inner edge of the susceptor usually has a concave pocket that is several millimeters larger than the diameter of the substrate. The substrate fits into the pocket of the susceptor, so that the substrate can remain at a specific position even when the susceptor is rotated, and a homogeneous reaction can occur. At this time, it is known that eccentricity may occur between the center of the wafer and the center of the susceptor, and if the amount of eccentricity becomes large, the film thickness distribution of the formed epitaxial layer becomes uneven. However, when actually placing a wafer on the susceptor, it is difficult to perfectly align the center of the wafer with the center of the susceptor because a transfer robot or the like is used and the wafer is raised and lowered by lift pins when it is placed on the susceptor.

[0006] In order to deal with such problems, conventional methods for evaluating the eccentricity of the substrate placement position have been attempted, such as a method of estimating the eccentricity by a camera or visually, etc. For example, Patent Document 1 proposes a method of evaluating the eccentricity of the substrate placement position by placing a substrate on a susceptor having a plurality of through holes, introducing an etching gas at the same temperature as the epitaxial growth temperature, transferring a susceptor through-hole pattern to the back surface of the substrate, and measuring the position of the susceptor through-hole pattern. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] JP 2012-227471 A Summary of the Invention [Problem to be solved by the invention]

[0008] Although the conventional evaluation using a camera can accurately estimate the amount of eccentricity, it is necessary to introduce a camera for each epitaxial device, which increases the manufacturing cost. In addition, in Patent Document 1, in addition to the epitaxial growth of the substrate, a process is required to introduce an etching gas, transfer a susceptor through-hole pattern to the back surface of the substrate, and measure the position of the susceptor through-hole pattern to obtain the amount of eccentricity, which causes a problem that the substrate placement position cannot be easily corrected. In addition, when a special susceptor without through-holes as in Patent Document 1 is used, the through-hole pattern cannot be transferred, which causes a problem that the substrate placement position cannot be evaluated and the placement position cannot be corrected.

[0009] The present invention has been made in view of the above problems, and aims to provide a method for easily evaluating the eccentricity of the substrate placement position at high temperatures during epitaxial growth, even when a general susceptor is used, without requiring additional equipment or modification of the device. Another aim is to provide a method for manufacturing an epitaxial wafer, which is capable of forming an epitaxial layer of uniform thickness on a substrate by evaluating the amount of eccentricity of the substrate placement position and correcting the amount of eccentricity. [Means for solving the problem]

[0010] The inventors have conducted research to solve the above problems and have found that it is possible to evaluate the flatness of the wafer surface before and after epitaxial growth, and to evaluate the amount of eccentricity of the substrate placement position of an epitaxial growth apparatus using the radial profile of the thickness distribution of the epitaxial film. The present invention has been completed based on the above findings, and the gist of the present invention is as follows.

[0011] <1> A method for evaluating an eccentricity of a substrate placement position in an epitaxial growth apparatus, comprising the steps of: a pre-epitaxial growth flatness evaluation step of evaluating the flatness of the wafer surface before epitaxial growth; a wafer placing step of placing the wafer, the flatness of which has been evaluated, on a susceptor of the epitaxial growth apparatus; an epitaxial growth step of performing an epitaxial growth process on the wafer placed on the susceptor in the wafer placing step; a post-epitaxial growth flatness evaluation step of evaluating the flatness of a surface of the epitaxial wafer produced through the epitaxial growth step; a shape profile acquisition step of acquiring an epitaxial film thickness shape distribution in a radial direction of the epitaxial wafer by subtracting the flatness of the wafer surface obtained in the flatness evaluation step before the epitaxial growth from the flatness of the epitaxial wafer obtained in the flatness evaluation step after the epitaxial growth; an eccentricity calculation step of calculating an eccentricity of a substrate placement position of the epitaxial growth apparatus based on the epitaxial film thickness profile distribution; A method for evaluating an eccentricity of a substrate placement position, comprising:

[0012] <2> The eccentricity calculation step includes: a superposition step of superposing the epitaxial film thickness profile distribution in a radial direction symmetrical to a wafer center position; a reference height distance calculation step of setting a reference height at a position having a lower height component at a constant equal distance from the outermost periphery of the epitaxial wafer in the radial direction in the two epitaxial film thickness profile distributions superimposed in the superimposing step, and calculating a radial distance between this position and a position where the other superimposed epitaxial film thickness profile distribution has a reference height; Further comprising: the eccentricity amount is calculated based on the radial distance in the eccentricity amount calculation step; <1> 2. A method for evaluating an eccentricity of a substrate placement position according to claim 1.

[0013] <3> In the shape profile acquisition step, the epitaxial film thickness shape distribution is acquired from a plurality of axial directions. <1> or <2> 2. A method for evaluating an eccentricity of a substrate placement position according to claim 1.

[0014] <4> In the shape profile acquisition step, the epitaxial film thickness shape distribution is acquired from an average value of a sector-shaped surface profile. <1> ~ <3> 2. The method for evaluating eccentricity of a substrate placement position according to claim 1 .

[0015] <5> In the reference height distance calculation step, the constant equidistant positions are determined within a range of 1 mm to 4 mm from the outermost circumference of the epitaxial wafer, and are positions on a circumference of a concentric circle of the epitaxial wafer. <2> ~ <4> 2. The method for evaluating eccentricity of a substrate placement position according to claim 1 .

[0016] <6> A method for manufacturing an epitaxial wafer, comprising the steps of: <1> ~ <5> a corrective mounting step of correcting a mounting position of a wafer to be film-formed on the susceptor based on an eccentricity evaluated by using the method for evaluating an eccentricity of a substrate mounting position according to any one of the above items, and then mounting the wafer on the susceptor; a post-correction growth processing step of performing an epitaxial growth process on the film-formation target wafer that has been corrected and placed; A method for producing an epitaxial wafer, comprising: Effect of the Invention

[0017] According to the present invention, it is possible to provide a method for easily evaluating the eccentricity of the substrate placement position during epitaxial growth, even when a general susceptor is used, without requiring additional equipment or modification of the device. It is also possible to provide a method for manufacturing an epitaxial wafer, which is capable of forming an epitaxial layer of uniform thickness on a substrate by evaluating the amount of eccentricity of the placement position and correcting the amount of eccentricity. [Brief description of the drawings]

[0018] [Figure 1] FIG. 1 is a schematic cross-sectional view of a conventional epitaxial growth apparatus. [Diagram 2] FIG. 1 is a schematic plan view of a conventionally known general susceptor. [Diagram 3] 1 is a schematic plan view showing the misalignment between the center of a wafer and the center of a susceptor. FIG. [Figure 4] 1 is a graph showing film thickness profile distributions measured in an example, superimposed in the radial direction in a direction symmetrical with respect to the center position of the wafer. [Diagram 5] 11 is a graph showing the relationship between the result of measuring the amount of eccentricity using a camera and the amount of eccentricity evaluated in the examples. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0019] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. Note that the components in the schematic diagrams are shown exaggerated in size, different from the actual size ratio of each component.

[0020] A method for evaluating the amount of eccentricity of the substrate placement position of an epitaxial growth apparatus according to the present invention will now be described. This method includes a pre-epitaxial growth flatness evaluation step of evaluating the flatness of the wafer surface before epitaxial growth, a wafer mounting step of mounting the wafer that has been subjected to the flatness evaluation on a susceptor of an epitaxial growth apparatus, an epitaxial growth step of performing an epitaxial growth process on the wafer mounted on the susceptor in the wafer mounting step, a post-epitaxial growth flatness evaluation step of evaluating the flatness of the epitaxial wafer surface produced through the epitaxial growth step, a shape profile acquisition step of acquiring an epitaxial film thickness shape distribution in the radial direction of the epitaxial wafer by subtracting the flatness of the wafer surface obtained in the pre-epitaxial growth flatness evaluation step from the flatness of the epitaxial wafer obtained in the post-epitaxial growth flatness evaluation step, and an eccentricity calculation step of calculating an eccentricity of the substrate mounting position of the epitaxial growth apparatus based on the epitaxial film thickness shape distribution. Each component and step will be described in detail below.

[0021] (Epitaxial growth equipment) 1 shows, as an example, a general epitaxial growth apparatus 150 used for forming an epitaxial layer on a wafer W. This epitaxial growth apparatus 150 includes an upper liner 151 and a lower liner 152 for maintaining airtightness, and an epitaxial growth furnace is defined by an upper dome 153 and a lower dome 154. A susceptor 1 for horizontally placing a wafer W thereon is provided inside this epitaxial growth furnace.

[0022] A conventionally known general susceptor 1 will be described with reference to Fig. 2. When epitaxial growth is performed, a wafer W is placed on the counterbore 11 of the susceptor 1, and a growth gas (source gas) is sprayed onto the surface of the wafer W while the susceptor 1 is rotated. Here, the susceptor 1 is provided with a circular recessed counterbore 11, and the wafer W is placed such that the center of the wafer W is located at the center of the counterbore 11. The wafer W and the susceptor 1 are in contact with each other at a ledge 11L.

[0023] <Pre-epitaxial growth flatness evaluation process> In the flatness evaluation step before epitaxial growth, first, the flatness of the wafer W surface before epitaxial growth is measured. The measurement method is not particularly limited, but for example, the flatness can be evaluated using the indices ROA (Roll Off Amount) and ESFQR (Edge Site Frontsurface referenced least sQuares / Range). ROA is an index of flatness of the outer periphery of the wafer, and is defined as the amount of roll-off at a position 149 mm from the center of the wafer (1 mm inward from the outermost periphery) when the least square plane of the rectangular area obtained by dividing the section 120 to 148 mm from the center of the wafer at 5° intervals in the circumferential direction is used as the reference plane. The measurement conditions of this roll-off amount can be arbitrarily changed to evaluate the entire roll-off shape. Similarly, ESFQR is defined as the SFQR value (maximum displacement from the least square plane in the region) of a region (almost rectangular region) of 5° in the circumferential direction and 30 mm in the radial direction surrounding the outer periphery of the wafer, for example.

[0024] <Wafer placement process> In the wafer mounting step, the wafer W is mounted on the susceptor 1. When mounting the wafer W, a transport robot or the like may be used, and when mounting the wafer W, the wafer W may be raised and lowered by lift pins (not shown).

[0025] <Epitaxial growth process> In the epitaxial growth process, an epitaxial layer is formed on one side of the wafer W. Any known or arbitrary method can be suitably used to form the epitaxial layer, and for example, the single-wafer epitaxial growth apparatus 150 described above can be used. As an example, in the case of forming a silicon epitaxial layer, hydrogen (H) is used as a carrier gas, and source gases such as dichlorosilane (SiH2Cl2) and trichlorosilane (SiHCl3) are introduced into the chamber, and the epitaxial layer is epitaxially grown by a CVD (Chemical Vapor Deposition) method at a temperature in the range of approximately 1000 to 1200°C, although the growth temperature varies depending on the source gas used. The epitaxial layer to be formed can be appropriately selected depending on the application, and may be an epitaxial layer of SiC or GaAs.

[0026] <Post-epitaxial growth flatness evaluation process> In the flatness evaluation step after epitaxial growth, the flatness of the wafer W surface after epitaxial growth is measured. In this step, the same indices and measurement method as those used in the flatness evaluation step before epitaxial growth are used. As long as this is the case, the measurement method is not particularly limited, but as described above, for example, the indices ROA (Roll Off Amount) and ESFQR (Edge Site Frontsurface referenced least sQuares / Range) may be used for evaluation. As described later, by evaluating the flatness before and after epitaxial growth, the film thickness distribution of the epitaxial layer can be evaluated.

[0027] <Shape profile acquisition process> In the shape profile evaluation step, the flatness of the wafer W surface obtained in the pre-epitaxial growth flatness evaluation step is subtracted from the flatness of the epitaxial wafer obtained in the post-epitaxial growth flatness evaluation step to obtain the epitaxial film thickness profile distribution in the radial direction of the epitaxial wafer. In this case, the epitaxial film thickness profile distribution may be obtained as a radial line profile obtained from a plurality of axial directions, or the epitaxial film thickness profile distribution may be obtained as a circumferential average value of a sector-shaped surface profile. The sector to be obtained may be divided into 4, 8, or 16 parts of the wafer W.

[0028] <Eccentricity calculation process> In the eccentricity calculation step, the eccentricity of the substrate placement position of the epitaxial growth apparatus 150 is calculated based on the epitaxial film thickness profile distribution. The eccentricity here refers to the horizontal deviation between the center position Cw of the wafer W and the center position Cs of the susceptor 1, as shown in FIG. 3. There is no particular limitation on the method of expression, but as shown in FIG. 3, an XY plane can be arbitrarily set in the in-plane direction of the wafer W, and the eccentricity can be expressed as a vector or distance between the XY coordinates of the wafer center position Cw and the susceptor center position Cs. In the eccentricity calculation step, it is preferable to further include an overlapping step and a subsequent reference height distance calculation step, as described later.

[0029] <<Layering process>> The overlapping process is a process of overlapping the epitaxial film thickness profile distribution in the radial direction in a direction symmetrical to the wafer center position Cw. By overlapping in the radial direction to the wafer center position Cw, it is possible to compare the epitaxial film thickness distribution profiles at positions at the same distance from the wafer center position Cw.

[0030] <<Reference height distance calculation process>> In the reference height distance calculation process following the overlapping process, the side with the lower height component at a constant equidistant position from the outermost circumference of the epitaxial wafer in the radial direction in the two epitaxial film thickness profile distributions overlapped in the overlapping process is set as the reference height, and the radial distance between this position and the position where the other overlapped epitaxial film thickness profile distribution is the reference height is calculated. Here, an example of the reference height distance calculation process in which the position at a constant equidistant position from the outermost circumference is set to 2 mm for region 0 and region 4, which are symmetrical with respect to the wafer center position Cw when the wafer is equally divided into eight, is specifically described with reference to FIG. 4. First, the height of the side with the lower height component at a position 2 mm from the outermost circumference of the wafer W is determined as the reference height. Then, the position from the wafer center position Cw where the height is the same as the reference height in the other region is determined, and the distance from the position at a constant equidistant position from the outermost circumference to this position is determined as the "reference height distance". Since this distance is the result of adding up the eccentricity amounts of the regions 0 and 4, the distance to be corrected based on this calculation result may be set to 1 / 2 the distance between the reference heights in the direction from the region 4 to the region 0. In this case, the constant equidistant position can be determined within a range of 1 mm to 4 mm from the outermost circumference of the epitaxial wafer, and is preferably set on the circumference of a concentric circle of the epitaxial wafer. This is because a position less than 1 mm from the outermost circumference cannot be evaluated because the current measuring device cannot handle it, and a difference in film thickness proportional to the distance from the susceptor center position Cs cannot be accurately evaluated in a range greater than 4 mm. In addition, the smaller the distance from the outermost circumference, the greater the factor of disturbance, so it is more preferable to determine the position within a range of 2 mm to 4 mm from the outermost circumference of the epitaxial wafer.

[0031] By going through the steps described above, the amount of eccentricity of the substrate placement position can be evaluated. This evaluation method does not require additional equipment or device modification, and even when a general susceptor is used, it is possible to easily evaluate the eccentricity of the substrate placement position at high temperatures during epitaxial growth.

[0032] (Method of manufacturing epitaxial wafers) Moreover, the method for manufacturing an epitaxial wafer according to the present invention includes a corrective placement step of correcting the placement position of the film-formed wafer W based on the amount of eccentricity evaluated using the method for evaluating the amount of eccentricity of the substrate placement position according to the embodiment described above, and then placing the film-formed wafer W on the susceptor, and a post-correction growth processing step of performing an epitaxial growth process on the film-formed wafer W that has been correctly placed.

[0033] In addition, in the corrective placement step, the transfer position of the transfer robot may be adjusted. As described above, the growth conditions for forming an epitaxial layer on the surface of the film-forming target wafer may be suitably selected from known or arbitrary methods, and for example, a single-wafer epitaxial growth apparatus 150 may be used. As an example, in the case of forming a silicon epitaxial layer, as described in the embodiment of the evaluation method, hydrogen (H) is used as a carrier gas, and source gases such as dichlorosilane (SiH2Cl2) and trichlorosilane (SiHCl3) are introduced into the chamber, and the epitaxial layer may be epitaxially grown by a CVD (Chemical Vapor Deposition) method at a temperature in the range of approximately 1000 to 1200°C, although the growth temperature varies depending on the source gas used. The epitaxial layer may be an epitaxial layer of SiC or GaAs.

[0034] The process of determining the amount of eccentricity may be performed for one film-formation target wafer W, and the placement position may be adjusted each time the next film-formation target wafer W is transferred into the epitaxial growth apparatus 150. Alternatively, the process of determining the amount of positional deviation may be performed for a plurality of film-formation target wafers W (e.g., 25 wafers per batch), and the placement position may be adjusted after one batch is completed.

[0035] According to this method for manufacturing an epitaxial wafer, the amount of eccentricity of the wafer W placement position before epitaxial growth can be made smaller than in the past, so that the variation in epitaxial film thickness on the outer periphery of the wafer W can be reduced. EXAMPLES

[0036] The present invention will be described in more detail below using examples, but the present invention is not limited to the following examples in any way.

[0037] <Confirmation test> A silicon wafer with a diameter of 300 mm was prepared, and divided into eight equal sectors with a central angle of 45°. For each sector, flatness evaluation was performed before epitaxial growth using a flatness measuring device (KLA Corporation, WaferSight2) by the ROA method, and the average value of the eight surface profiles was obtained by averaging the circumferential components.

[0038] Next, the silicon wafer was transported into the epitaxial growth apparatus 150 using a transport robot, and placed on the susceptor using lift pins. At this time, in order to confirm the evaluation accuracy of the evaluation method according to the present invention, the exact amount of eccentricity of the substrate placement position was measured using a CCD camera in the epitaxial growth apparatus 150. The CCD camera was covered with a sheath to shield it from the effects of temperature, and was placed on the measurement unit 155 (see FIG. 1) of the epitaxial growth apparatus 150. In the evaluation using the CCD camera, the amount of eccentricity was evaluated by analyzing the distance between the outermost circumference of the susceptor and the outermost circumference of the wafer.

[0039] Next, hydrogen gas was supplied at 1130° C., and a silicon epitaxial film was grown at a prescribed susceptor rotation speed and growth time to control the epitaxial film thickness. Trichlorosilane gas was used as the raw material source gas, diborane gas as the dopant gas, and hydrogen gas as the carrier gas.

[0040] The obtained epitaxial silicon wafer was subjected to flatness evaluation again using the same method as the evaluation performed on the initial silicon wafer, and the flatness after epitaxial growth was evaluated. The flatness before epitaxial growth was subtracted from the flatness after epitaxial growth obtained, and the epitaxial film thickness profile distribution was obtained.

[0041] Then, in each of the eight equal-divided regions, the epitaxial film thickness profile distribution averaged in the circumferential direction was superimposed in the radial direction in a direction symmetrical to the center position of the wafer and evaluated. In the two superimposed epitaxial film thickness profile distributions, the height with the lower height component at a position 2 mm from the outermost circumference was set as the reference height, The other one overlapping In the epitaxial film thickness profile distribution, the position at the same height as this reference height was detected, and the amount of eccentricity was calculated. A similar experiment was performed on 40 silicon wafers, and the results were compared with the results of evaluating the amount of eccentricity of the substrate placement position evaluated using a CCD camera. Figure 5 shows the results of comparing the amount of eccentricity in the Y direction on the XY plane. From the results obtained, the correlation coefficient R 2 = 0.9194 Therefore, it was confirmed that the evaluation method according to the present invention can easily evaluate the eccentricity of the wafer placement position with sufficiently high accuracy compared to the evaluation method using a CCD camera. [Industrial Applicability]

[0042] According to the present invention, it is possible to provide a method for easily evaluating the eccentricity of the substrate placement position during epitaxial growth, even when a general susceptor is used, without requiring additional equipment or modification of the device. It is also possible to provide a method for manufacturing an epitaxial wafer, which is capable of forming an epitaxial layer of uniform thickness on a substrate by evaluating the amount of eccentricity of the placement position and correcting the amount of eccentricity. [Explanation of symbols]

[0043] 1. Susceptor 11 Counterbore 11L Ledge section 150 Epitaxial growth equipment 151 Upper Liner 152 Lower Liner 153 Upper Dome 154 Lower Dome 155 Measuring section Cs susceptor center Cw Center of wafer W wafer

Claims

1. A method for evaluating the eccentricity of a substrate placement position in an epitaxial growth apparatus, comprising: a pre-epitaxial growth flatness evaluation step of evaluating the flatness of the wafer surface before epitaxial growth; a wafer placing step of placing the wafer, the flatness of which has been evaluated, on a susceptor of the epitaxial growth apparatus; an epitaxial growth step of performing epitaxial growth processing on the wafer placed on the susceptor in the wafer placing step; a post-epitaxial growth flatness evaluation step of evaluating the flatness of the surface of the epitaxial wafer produced through the epitaxial growth step; a shape profile acquisition step of acquiring an epitaxial film thickness profile distribution in a radial direction of the epitaxial wafer by subtracting the flatness of the wafer surface obtained in the pre-epitaxial growth flatness evaluation step from the flatness of the epitaxial wafer obtained in the post-epitaxial growth flatness evaluation step; an eccentricity calculation step of calculating an eccentricity of a substrate placement position of the epitaxial growth apparatus based on the epitaxial film thickness profile distribution; Including, The eccentricity calculation step includes: a superposition step of superposing the epitaxial film thickness profile distribution in a radial direction symmetrical with respect to a wafer center position; a reference height distance calculation step of setting a reference height at a position having a lower height component at a constant equal distance from the outermost periphery of the epitaxial wafer in the two epitaxial film thickness profile distributions superimposed in the superimposition step, and calculating the radial distance between this position and a position at which the other superimposed epitaxial film thickness profile distribution has the reference height; further comprising The method for evaluating the amount of eccentricity of a substrate placement position, wherein the amount of eccentricity is calculated based on the radial distance in the eccentricity calculation step.

2. 2. The method for evaluating the amount of eccentricity of a substrate placement position according to claim 1, wherein the shape profile acquisition step acquires the epitaxial film thickness profile distribution from a plurality of axial directions.

3. 3. The method for evaluating the amount of eccentricity of a substrate placement position according to claim 1, wherein in the shape profile acquisition step, the epitaxial film thickness profile distribution is acquired from an average value of a sector-shaped surface profile.

4. 4. The method for evaluating eccentricity of a substrate placement position according to claim 1, wherein, in the reference height distance calculation step, the constant equidistant positions are determined within a range of 1 mm to 4 mm from an outermost periphery of the epitaxial wafer.

5. A method for manufacturing an epitaxial wafer, comprising: a corrective placement step of correcting the placement position of a wafer to be film-formed based on the eccentricity evaluated using the method for evaluating the eccentricity of a substrate placement position according to any one of claims 1 to 4, and then placing the wafer on the susceptor; a post-correction growth processing step of performing epitaxial growth processing on the film-forming target wafer that has been corrected and placed; A method for manufacturing an epitaxial wafer, comprising:

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