Electrostatic Chuck Process

Abstract

One or more embodiments described herein generally relate to a method for chucking and dechucking a substrate to or from an electrostatic chuck used in a semiconductor processing system. Generally, in the embodiments described herein, the method includes: (1) applying a first voltage to an electrode disposed in a pedestal from a direct current (DC) power supply; (2) introducing a process gas into a process chamber; (3) applying power from a radio frequency (RF) power supply to a showerhead; (4) performing a process on the substrate; (5) stopping the application of the RF power; (6) removing the process gas from the process chamber; and (7) stopping the application of the DC power.

Description

[Technical field]

[0001] Field

[0001] One or more embodiments described herein relate generally to semiconductor processing systems, and more particularly to a method for chucking and dechucking a substrate to or from an electrostatic chuck used in a semiconductor processing system. [Background technology]

[0002] Electrostatic chuck (ESC) pedestals, commonly known as electrostatic chucks, are used in semiconductor device manufacturing to securely hold a substrate in a processing position within the processing volume of a process chamber using an electrostatic chucking force, which is a function of the potential between a DC voltage provided to a chuck electrode embedded in the dielectric material of the pedestal and a substrate disposed on the surface of the dielectric material.

[0003] In the manufacture of semiconductor devices, integrated circuits have evolved into complex devices that can contain millions of transistors, capacitors, and resistors on a single chip. The evolution of chip designs constantly demands higher circuit density, which will increase the curvature of the substrate in a multi-stack structure. Flattening the substrate against the surface of the pedestal facilitates clamping the substrate during plasma processing and ensures accurate radio frequency (RF) coupling to ground for chamber longevity and uniform film deposition. As the distance of the substrate from the chuck electrode increases, loss of chucking becomes a risk. Therefore, higher electrostatic chuck voltages are required to clamp the substrate to the surface of the pedestal. Higher electrostatic chuck voltages can cause DC plasma discharges near the substrate. DC plasma discharges can damage the substrate during processing.

[0004]

[0004] Furthermore, chip design evolution has resulted in modified pedestal surface designs that include multiple points, commonly referred to as posts, where the substrate contacts the pedestal surface. However, while the posts are desirable for providing repeatable contact to minimize particle defects on the backside of the substrate, in conventional processes the substrate can often be damaged or broken due to the modified structure of the pedestal surface. The posts can induce damage at a higher rate for increased electrostatic chuck voltages and when the substrate position is not properly controlled. Damage to the backside of the substrate at the locations of the posts can result in lithographic defocusing, significantly affecting production yields.

[0005] Therefore, a need exists for a method of chucking and dechucking a substrate to and from an electrostatic chuck that reduces lithographic defocus and yield loss by eliminating backside damage. Summary of the Invention

[0006] One or more embodiments described herein generally relate to a method for chucking and dechucking a substrate to or from an electrostatic chuck used in a semiconductor processing system.

[0007]

[0007] In one embodiment, a method for processing a substrate in a process chamber includes applying a direct current to an electrode disposed in a pedestal on which the substrate is disposed in the process chamber; flowing one or more process gases into the process chamber following the application of the direct current to the electrode; flowing one or more process gases into the process chamber following the flow of the one or more process gases into the process chamber; applying radio frequency (RF) power to a showerhead in the process chamber following the application of the RF power; processing the substrate following the application of the RF power; removing one or more process gases from the process chamber following the stopping of the application of the RF power; and stopping the application of DC power following the removal of the one or more process gases.

[0008] In another embodiment, a method for processing a substrate includes: (a) positioning the substrate on a surface of a pedestal, the pedestal being a first spacing from a showerhead; (b) applying a DC voltage at a first DC voltage level to an electrode disposed within the pedestal; (c) flowing one or more process gases into a process chamber through the showerhead; (d) applying RF power at a first RF power level to the showerhead in the process chamber; (e) increasing the DC voltage and RF power to a second DC voltage level and a second RF power level before, during, or both, processing of the substrate; (f) decreasing the DC voltage and RF power to a third DC voltage level and a third RF power level after processing of the substrate; (g) moving the pedestal to a second spacing from the showerhead in the process chamber; (h) stopping application of RF power to the showerhead; (i) removing one or more process gases from the process chamber; and (j) stopping application of the DC voltage to the electrode.

[0009] In yet another embodiment, a method for processing a substrate includes positioning the substrate on a surface of a pedestal, the pedestal being a first distance from a showerhead in a process chamber; applying a DC voltage at a first DC voltage to an electrode disposed in the pedestal; flowing a first process gas into the process chamber through the showerhead after application of the DC voltage at the first DC voltage level; applying radio frequency (RF) power at a first RF power level to the showerhead in the process chamber; moving the pedestal to a second distance from the showerhead, the second distance being closer to the showerhead than the first distance; flowing a second mixed process gas into the process chamber through the showerhead. increasing the DC voltage and the RF power to a second DC voltage level and a second RF power level before, during, or both of performing the process on the substrate; decreasing the DC voltage and the RF power to a third DC voltage level and a third RF power level after performing the process on the substrate; removing the second mixed process gas from the process chamber after performing the process on the substrate while flowing the first process gas through the showerhead into the process chamber; moving the pedestal to a third spacing within the process chamber from the showerhead; stopping the application of the RF power; removing the first process gas from the process chamber after stopping the application of the RF power; and stopping the application of the DC power after removing the first process gas from the process chamber. [Brief description of the drawings]

[0010]

[0010] In order that the above-mentioned features of the present disclosure may be understood in detail, a more particular description of the present disclosure briefly summarized above will be obtained by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings merely illustrate typical embodiments of the present disclosure, and therefore should not be considered as limiting the scope of the present disclosure, which may also admit of other equally effective embodiments.

[0011] [Figure 1] 1 is a schematic cross-sectional view of a process chamber according to at least one embodiment described herein. [Figure 2A]

[0012] 2 is a top view of the patterned surface of the pedestal of FIG. 1 according to at least one embodiment described herein. [Figure 2B]

[0013] FIG. 2B is a cross-sectional view of the pedestal of FIG. 2A according to at least one embodiment described herein. [Figure 3A]

[0014] 3 illustrates a method 300A according to embodiments described herein. [Figure 3B] 3 illustrates a method 300B according to embodiments described herein. [Figure 4]

[0015] 2 is a graph showing the relationship of process parameters in steps involved in the method disclosed herein. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012]

[0016] In the following description, numerous specific details are presented to provide a more complete understanding of the embodiments of the present disclosure. However, it will be apparent to one of ordinary skill in the art that one or more of the embodiments of the present disclosure can be practiced without one or more of the specific details. In other instances, well-known features are not described so as not to obscure one or more of the embodiments of the present disclosure.

[0013]

[0017] One or more embodiments described herein generally relate to a method for chucking and dechucking a substrate to and from an electrostatic chuck used in a semiconductor processing system. In the embodiments described herein, a pedestal in a process chamber has a modified pedestal surface that includes a plurality of points, commonly referred to as posts, where the substrate contacts the pedestal surface. In a conventional method for chucking a substrate to the modified pedestal surface, a first process gas is introduced into the process chamber. Radio frequency (RF) power is then generated from an RF power source, and an RF plasma is generated in the process chamber. A direct current (DC) voltage is then generated from the DC power source to an electrode disposed in the pedestal to apply a DC electrostatic chuck bias and chuck the substrate to the pedestal surface by an electrostatic chucking force. Following the chucking to the substrate, a process is performed on the substrate in the process chamber. Following the process, the DC electrostatic chuck is turned off, and then the RF power is turned off. With the DC electrostatic chuck and RF power turned off, gas flow into the process chamber is stopped.

[0014]

[0018] However, in the conventional methods described above, in the absence of a chucking force, a high degree of substrate movement occurs upon introduction of gas, which can lead to damage to the substrate. In addition, in conventional methods, backside damage can occur when the substrate experiences a force on the pedestal surface that moves the substrate relative to the posts. This force can be due to movement or due to thermal expansion. In the case of thermal expansion, the difference in temperature between the substrate at the posts and the pedestal surface can cause localized damage as the substrate expands or contracts relative to the pedestal surface.

[0015]

[0019] In the method for chucking a substrate to the modified pedestal surface described in the embodiments herein, a DC voltage is first generated from a direct current (DC) power supply to an electrode disposed within the pedestal, and the substrate is chucked to the pedestal surface by an electrostatic chucking force. After the substrate is chucked by the electrostatic chucking force, a first process gas can be introduced into the process chamber. After the first process gas is introduced, RF power is generated from the RF power supply, and an RF plasma is generated in the process chamber. By applying the chucking force before the RF plasma generation, the position of the substrate is advantageously controlled, preventing the substrate from being broken or damaged due to unexpected movement of the substrate on the pedestal surface during the introduction of the first process gas. Additionally, applying the chucking force first improves yield by reducing lithographic defocus by eliminating backside damage.

[0016]

[0020] After RF power is applied to generate an RF plasma, a process is performed on the substrate. The process may be a deposition process, an etch process, a plasma treatment, or another process. Following performance of the process on the substrate, the RF power is turned off. After the RF power is turned off, the flow of the first process gas into the process chamber is stopped. Following the cessation of gas flow, the electrostatic chucking force is turned off before removing the substrate from the process chamber.

[0017]

[0021] Generally, in the embodiments described herein, the method generally applies the following sequence: (1) applying a first voltage from a direct current (DC) power supply to an electrode disposed within the pedestal; (2) introducing a process gas into the process chamber; (3) applying a second voltage from an RF power supply; (4) performing a deposition (or other) process on the substrate; (5) stopping application of the second voltage from the RF power supply; (6) removing the process gas from the process chamber; and (7) stopping application of DC power from the DC power supply.

[0018]

[0022] 1 is a schematic cross-sectional view of a process chamber 100 according to one embodiment described herein. The process chamber 100 is a plasma enhanced chemical vapor deposition (PECVD) process chamber, although it is contemplated that other process chambers may benefit from the aspects described herein. One example of a process chamber that may benefit from the embodiments described herein is the PRODUCER® series of PECVD compatible chambers available from Applied Materials, Inc., Santa Clara, Calif. It is contemplated that other similarly equipped process chambers, including those from other manufacturers, may benefit from the embodiments described herein.

[0019]

[0023] The process chamber 100 includes a chamber body 102, a pedestal 104 disposed within the chamber body 102, and a lid assembly 106 coupled to the chamber body 102 to enclose the pedestal 104 within a processing region 120. The lid assembly 106 includes a gas distributor 112. A substrate 107 is provided to the processing region 120 through an opening 126, such as a slit valve, formed in the chamber body 102.

[0020]

[0024] The isolator 110 is a dielectric material, such as a ceramic or metal oxide, e.g., aluminum oxide and / or aluminum nitride, that separates the gas distributor 112 from the chamber body 102. The gas distributor 112 includes openings 118 to allow process gases to enter the processing region 120. Process gases are supplied to the process chamber 100 via conduits 114, where they enter a gas mixing region 116 before flowing through the openings 118. An exhaust 152 is formed in the chamber body 102 below the pedestal 104. The exhaust 152 may be connected to a vacuum pump (not shown) to remove unreacted species and by-products from the process chamber 100.

[0021]

[0025] The gas distributor 112 is coupled to a power source 141, such as an RF generator. The power source 141 provides continuous and / or pulsed RF power to the gas distributor 112. During operation, the power source 141 is turned on to provide power to the gas distributor 112 to facilitate the formation of a plasma in the processing region 120.

[0022]

[0026] The pedestal 104 is formed of a ceramic material, such as an oxide or nitride of a metal or an oxide / nitride mixture, such as aluminum, aluminum oxide, aluminum nitride, or an aluminum oxide / aluminum nitride mixture. The pedestal 104 is supported by a shaft 143. The pedestal 104 is electrically grounded. An electrode 128 is embedded in the pedestal 104. The electrode 128 can be a plate, a perforated plate, a mesh, a wire screen, or any other dispersive configuration. The electrode 128 is coupled to a power source 132 via a connection 130. The power source 132 provides power to the electrode 128. In some implementations, the electrode 128 facilitates electrostatic chucking of the substrate 107 such that the pedestal 104 functions as an electrostatic chuck. When the electrode 128 functions as an electrostatic chuck, the power source 132 can be utilized to control characteristics of a plasma formed in the processing region 120 or to facilitate the generation of a plasma within the processing region 120. The pedestal 104 includes a patterned surface 142 for supporting the substrate 107. The pedestal 104 also includes a pocket 140. The pocket 140 may alternatively be an edge ring. The substrate 107 and the pocket 140 are concentrically disposed on the surface 142 of the pedestal 104.

[0023]

[0027] The power supply 141, the pedestal 104, and the power supply 132 may all be connected to a controller 150. The controller 150 controls the application of power to each of the power supply 141, the pedestal 104, and the power supply 132. The controller 150 may increase or decrease the power provided to each of the power supply 141, the pedestal 104, and the power supply 132. The controller 150 may coordinate the utilization of the power supply 141, the pedestal 104, and the power supply 132 such that the supply of power to each of the power supply 141, the pedestal 104, and the power supply 132 is coordinated. In some implementations, each of the power supply 141, the pedestal 104, and the power supply 132 may be connected to a separate controller 150. In implementations where each of the power supply 141, the pedestal 104, and the power supply 132 are connected to different controllers, each of the controllers 150 may communicate with each other via a wired or wireless connection.

[0024]

[0028] FIG 2A is a top view of the pedestal 104 of FIG 1 having one embodiment of a patterned surface 142. The pedestal 104 shown in FIG 2A includes a peripheral shelf 202 surrounded by a pocket 140. The patterned surface 142 includes two distinct regions, a central region 200 surrounded by a peripheral region 205. The patterned surface 142 includes a plurality of posts 210 having upper surfaces 215 that define a substrate receiving surface 220. The posts 210 in the central region 200 may have a different height than the posts 210 in the peripheral region 205. The upper surfaces 215 of each of the plurality of posts 210 are substantially coplanar. The relative heights of the posts 210 in the central region 200 and the peripheral region 205 are shown in more detail in FIG 2B.

[0025]

[0029] Although each of the plurality of posts 210 is shown as rectangular in plan view, the posts 210 may be circular, elliptical, hexagonal, or other shapes in plan view. In some embodiments that can be combined with other embodiments, the central region 200 has a surface area that is less than the surface area of ​​the peripheral region 205. For example, if the diameter of the patterned surface 142 is about 12 inches, the surface area of ​​the peripheral region 205 is about 113 square inches and the surface area of ​​the central region 200 is about 11 square inches. In some embodiments that can be combined with other embodiments, the surface area of ​​the peripheral region 205 is about 900% greater than the surface area of ​​the central region 200. The top surface 215 of each of the plurality of posts 210 includes a surface roughness (average surface roughness or Ra) of about 20 microinches to about 60 microinches, such as about 30 microinches to about 50 microinches or about 35 microinches to about 45 microinches. In some embodiments, the top surface 215 of each of the plurality of posts 210 includes a surface roughness of about 40 microinches. Patterned surface 142 also includes lift pin holes 212. The lift pin holes 212 are positioned within a peripheral region of patterned surface 142 and are spaced between posts 210. The lift pin holes 212 are used in conjunction with respective lift pins (not shown) to raise and lower the substrate during transport to and from process chamber 100.

[0026]

[0030] 2B is a cross-sectional view of the pedestal 104 of FIG. 2A. As shown in FIG. 2B, the plurality of posts 210 includes a plurality of first posts 225A in the peripheral region 205 and a plurality of second posts 225B in the central region 200. A height 230 of each of the plurality of first posts 225A is greater than a height 235 of the plurality of second posts 225B. The heights 230 and 235 are measured from a top or bottom surface 232 of the pedestal 104. In some embodiments, the height 230 of each of the plurality of first posts 225A is about 0.002 inches to about 0.0024 inches, such as about 0.0022 inches. In some embodiments that can be combined with other embodiments, the height 235 of each of the plurality of second posts 225B is about 0.0005 inches to about 0.0007 inches, such as about 0.0006 inches. Although only two different heights of posts 210 (ie, height 230 and height 235 ) are shown, patterned surface 142 may include other posts of heights different than height 230 and height 235 .

[0027]

[0031] The difference between the heights 230 and 235 and / or the surface area of ​​the central region 200 and the peripheral region 205 changes the rate of heat transfer between the pedestal 104 and anything placed on the pedestal. The altered rate of heat transfer alters the temperature profile of the substrate. In some embodiments, the difference between the heights 230 and 235 and / or the surface area of ​​the central region 200 and the peripheral region 205 improves the temperature uniformity within the substrate, thereby improving deposition uniformity on the substrate. In some embodiments, making the height 235 of each of the plurality of second posts 225B smaller than the height 230 of each of the plurality of first posts 225A increases the temperature at the center of the substrate. Increasing the temperature at the center of the substrate improves the temperature uniformity across the substrate, thereby improving deposition uniformity on the substrate.

[0028]

[0032] The heights 230 and 235 of the posts 210 result in a multi-level structure on the bottom surface 232 of the pedestal 104. For example, the bottom surface 232 of the central region 200 defines an elevated surface 240 compared to the bottom surface 232 of the peripheral region 205, which is referred to as a depressed surface 245 compared to the elevated surface 240. The elevated surface 240 and the depressed surface 245 of the pedestal 104 shown in FIG. 2B define a profile such as an upside-down or inverted U-shaped profile 250.

[0029]

[0033] FIG. 3A illustrates a method 300A according to an embodiment described herein. In step 302, the substrate 107 is positioned on the pedestal 104 in the process chamber 100. While the substrate 107 is positioned on the pedestal 104, the pedestal 104 is in a substrate receiving position and the substrate 107 is in a pre-processing position. When the pedestal 104 is in the substrate receiving position, the pedestal is spaced apart from the gas distributor at a distance of about 3500 mils to about 5000 mils, such as about 3750 mils to about 4750 mils, such as about 4000 mils to about 4500 mils. While the substrate 107 is positioned on the pedestal 104, the process chamber 100 is purged with a first process gas. Purging the process chamber 100 removes unwanted gases and contaminants from the process volume and fills the process chamber with a first process gas having a high threshold energy for ionization. The first process gas is introduced at a flow rate of about 1000 sccm to about 3000 sccm, such as about 1500 sccm to about 2500 sccm. The introduction of the first process gas is gradually tapered toward the end of step 302 and is stopped after the substrate 107 is placed on the pedestal 104.

[0030]

[0034] In step 304, the power supply 132 is turned off after step 302. In step 304, the process chamber 100 is filled with a first process gas, for example, helium gas in step 302. The power supply 132 is a DC power supply that applies a DC voltage to the electrode 128 in the pedestal 104 to chuck the substrate 107 to the patterned surface 142. The DC voltage can be a first DC voltage level of about 300 volts to about 1000 volts, for example, about 300 volts to about 600 volts, for example, about 300 volts to about 500 volts, for example, about 350 volts to about 450 volts, for example, about 400 volts. Chucking the substrate 107 prior to subsequent steps of the method provides the advantage of controlling the position of the substrate 107 and helps prevent movement of the substrate 107. Stabilizing the substrate 107 prevents damage that may occur as the substrate 107 moves and the movement creates forces between the posts 210 on the patterned surface 142 and the substrate 107. The DC voltages disclosed herein, particularly in combination with other disclosed process parameters such as gas composition, internal chamber pressure, and substrate spacing, mitigate undesirable electrostatic discharge of the first process gas in the process chamber, which is further introduced in step 306.

[0031]

[0035] In step 306, one or more first process gases are flowed into the process chamber 100 through the gas distributor 112. Step 306 is performed after step 304. The first process gas may include helium or other similar process gas. The use of helium gas offers the advantage of having a higher thermal conductivity that helps flatten local temperature variations at the patterned surface 142, which can help prevent backside damage due to uniform thermal expansion. It is contemplated that there are other process gases that can be utilized instead of helium as the first process gas. The first process gas has a high threshold energy that eliminates ionization during substrate chucking. Helium gas provides a high bias breakdown medium for the DC discharge, which improves stability when the pedestal 104 is spaced further away from the gas distributor 112. Helium has been shown to have a significantly higher bias breakdown voltage than gases such as argon when compared under process conditions similar to those described herein. When comparing the amount of defects on the substrate while using helium, it was found that the number of defects on the substrate can be reduced by 90% to 95% when compared to using argon as the first process gas.

[0032]

[0036] The first gas is introduced at a flow rate of about 1 sccm to about 10,000 sccm, such as about 1 sccm to about 4000 sccm, such as about 1000 sccm to about 3000 sccm, such as about 2000 sccm. In some embodiments, the flow rate of the process gas into the process chamber 100 during step 306 can be increased from an initial flow rate of about 0 sccm to a final flow rate set forth in one of the ranges above. The increase in process gas further minimizes substrate movement.

[0033]

[0037] During step 306, the pressure in the chamber is increased to a pressure of about 5 Torr to about 15 Torr, such as about 6 Torr to about 12 Torr, such as about 7 Torr to about 10 Torr. The pressure in the chamber is maintained at the pressure during substrate processing.

[0034]

[0038] In step 308, the power source 141 is turned on. Step 308 is performed after step 306. The power source 141 may be an RF generator that applies RF power to the gas distributor 112. The RF power may be a first RF power level, ranging from about 100 watts to about 6000 watts, such as about 150 watts to about 3000 watts, such as about 200 to about 2000 watts, such as about 250 and about 500 watts, such as about 350 watts. It is contemplated that the range of the first RF power level may be greater than about 6000 watts, such as about 7000 watts, such as about 8000 watts, such as about 9000 watts, such as about 10000 watts. In some embodiments, the first RF power level is greater than about 100 watts, such as about 150 watts, such as about 200 watts, such as about 250 watts. In some embodiments, the first RF power level ranges from about 100 Watts to 8000 Watts, such as from about 150 Watts to about 6000 Watts, such as from about 200 Watts to about 5000 Watts, such as from about 250 Watts to 2000 Watts.

[0035]

[0039] In step 314, both the DC voltage and the RF power are increased to a second DC voltage level and a second RF power level when substrate processing is performed on the substrate 107. The substrate processing may include a deposition process or a treatment process. In some embodiments, the substrate 107 undergoes an oxidation process. In embodiments where step 310 (FIG. 3B) and step 312 (FIG. 3B) are utilized, the DC voltage and the RF power may be increased after step 310 or step 312. In embodiments where step 310 and step 312 are not utilized, the DC voltage and the RF power may be increased after step 308. The second DC voltage level is about 800 volts to about 1100 volts, such as about 900 volts to about 1050 volts, such as 950 volts to about 1000 volts. In some embodiments, the second DC voltage level may be about 980 volts. The RF power is increased to a second RF power level. The second RF power level is from about 1000 watts to about 6000 watts, such as from about 1000 watts to about 4000 watts, such as from about 2000 watts to about 3000 watts, such as from about 2250 watts to about 2750 watts. In some embodiments, the second RF power level can be about 2450 watts. In some embodiments, the second RF power level is greater than about 6000 watts, such as from about 7000 watts, such as from about 8000 watts, such as from about 9000 watts, such as from about 10000 watts to about 5000 watts, such as from about 1500 watts to about 5000 watts, such as from about 2000 watts to about 4000 watts. Substrate processing is performed during or after increasing the DC voltage and RF power to the second DC voltage level and the second RF power level. In some embodiments, substrate processing is performed both during and after the DC voltage and RF power are increased to the second DC voltage level and the second RF power level.

[0036]

[0040] In step 316, both the DC voltage and the RF power are reduced to a third DC voltage level and a third RF power level. The reduction in the DC voltage and the RF power is accomplished by stopping the substrate processing performed on the substrate 107 in step 314. In some embodiments, which can be combined with other embodiments, the DC voltage and the RF power are reduced after performing the substrate processing such that the third DC voltage level and the third RF power level are the same DC voltage level and the first RF power level of step 314. The third DC voltage level is about 300 volts to about 1000 volts, e.g., about 300 volts to about 600 volts, e.g., about 300 volts to about 500 volts, e.g., about 350 volts to about 450 volts, e.g., about 400 volts. The third RF power level is about 100 Watts to about 6000 Watts, e.g., about 150 Watts to about 3000 Watts, e.g., about 200 to about 2000 Watts, e.g., about 250 and about 500 Watts, e.g., about 350 Watts. It is contemplated that the range of the third RF power level may be greater than about 6000 Watts, e.g., about 7000 Watts, e.g., about 8000 Watts, e.g., about 9000 Watts, e.g., about 10000 Watts. In these embodiments, the amount of RF power being supplied at this stage of the method 300 is higher than the RF power supplied in conventional methods, thereby providing a more stable transition from the higher RF power used when substrate processing is performed. This improves temperature stabilization and prevents backside damage.

[0037]

[0041] In step 322, the power supply 141 is turned off so that RF power ceases to be applied to the gas distributor 112. By turning off the RF power, the generation of plasma within the process chamber 100 may be stopped.

[0038]

[0042] In step 324, the flow of the first gas into the process chamber is stopped. In step 324, the first gas can be removed from the process chamber 100. The first gas is removed from the process chamber 100 while DC power is still applied to the electrode 128 in the pedestal 104. By stopping the flow of the first gas while DC power is applied to the electrode 128, movement of the substrate 107 caused by evacuation of the process chamber 100 is minimized. The pressure in the process chamber 100 during step 324 is reduced to substantially near vacuum pressure. Step 324 is performed following step 322. The pressure in the process chamber 100 is also reduced during the removal of the first gas from the process chamber 100. The pressure in the process chamber 100 is reduced to a predetermined pressure, for example, less than about 5 Torr, for example, less than about 3 Torr, for example, less than about 2 Torr, for example, less than about 1 Torr.

[0039]

[0043] In step 326, following step 324, the power supply 132 is turned off. Turning off the power supply 132 stops the application of the DC voltage and stops chucking the substrate 107 to the patterned surface. After chucking of the substrate 107 stops, the substrate 107 can be removed from the patterned surface 142.

[0040]

[0044] Figure 3B illustrates a method 300B according to embodiments described herein. Method 300B of Figure 3B is similar to method 300A of Figure 3A, but may include several additional process steps, such as step 303, step 310, step 312, step 318, and step 320, described herein.

[0041]

[0045] In optional step 303 (FIG. 3B), the pedestal 104 is moved from the substrate receiving position to a first spacing from the gas distributor. The first spacing is about 200 mils to about 3000 mils, such as about 200 mils to about 1000 mils, such as about 450 mils to about 750 mils, from the gas distributor 112. In some implementations, the pedestal 104 is spaced about 550 mils from the gas distributor 112, although other locations are possible. The selected spacing facilitates chucking of the substrate without unintentional plasma generation.

[0046] In step 310 (FIG. 3B), the pedestal 104 is moved within the process chamber 100 to position it closer to the gas distributor 112. Step 310 is performed between steps 308 and 310 as described above. In this embodiment, the pedestal 104 is moved to a second spacing, which is about 200 mils to about 400 mils, e.g., about 250 mils to about 350 mils, e.g., about 300 mils, from the gas distributor 112.

[0042]

[0047] Step 312 is performed following or simultaneously with step 310. In step 312 (FIG. 3B), the flow of the first process gas into the process chamber 100 is stopped while the second process gas mixture is flowed into the process chamber 100 through the gas distributor 112. In some embodiments, the first process gas can be removed from the process chamber 100 during this step. The second process gas mixture includes one or more of a carrier gas and a process / deposition gas, such as a mixture of argon and propene. Other carrier gases and process / deposition gases, such as nitrogen, ethylene, oxygen, tungsten hexafluoride, diborane ... Npe Alternatively, a gas mixture such as 1-methylbutylisonitrile, silane, or nitrous oxide may be used. The second gas mixture is flowed into the process chamber 100 at a flow rate of about 1 sccm to about 10,000 sccm, such as about 1 sccm to about 4,000 sccm, such as about 1,000 sccm to about 4,000 sccm, such as about 2,500 sccm.

[0043]

[0048] In some exemplary embodiments, which may be combined with other embodiments, the increase in the second gas mixture flow into the process chamber 100 is from about 10 sccm / s to 1000 sccm / s. In some embodiments, the flow rate of the first gas into the process chamber 100 is decreased at the same rate that the flow rate of the second gas mixture is increased. This allows the pressure in the process chamber 100 to remain constant during the transition from the first gas to the second gas mixture flow.

[0044]

[0049] In embodiments where the second gas mixture is a mixture of argon and propane, the ratio of argon gas to propane gas flowed into the process chamber 100 may be between about 3:1 and about 10:1, such as between about 4:1 and about 8:1, such as between about 5:1 and about 7:1. In embodiments where other precursor gases are used, similar ratios of inert and reactive gases may be utilized.

[0045]

[0050] In some embodiments, which can be combined with other embodiments, steps 310 and 312 can be performed simultaneously such that the second gas mixture is introduced while the pedestal 104 is being moved to a new position.

[0046]

[0051] Step 318 is performed following step 316 and prior to step 320. In step 318, the first gas mixture is flowed into the process chamber 100 through the gas distributor 112 while the second gas mixture is removed from the process chamber 100. By the end of step 318, the flow rates of both the first gas mixture and the second gas mixture are the same as the flow rates utilized in step 306. In some embodiments, the flow rate of the second gas mixture in the process chamber 100 can be at or near about 0 sccm by the end of step 318. The first gas can be flowed at a flow rate of about 1 sccm to about 10,000 sccm, such as about 1 sccm to about 4000 sccm, such as about 1000 sccm to about 3000 sccm, such as about 2000 sccm, by the end of step 318.

[0047]

[0052] In optional step 320, the pedestal 104 is moved in the process chamber 100 to a third distance from the gas distributor 112, the third distance being greater than the second distance. In some implementations, the third distance between the pedestal 104 and the gas distributor 112 is about 450 mils to about 750 mils, such as about 500 mils to about 700 mils, such as about 550 mils to about 650 mils, such as about 600 mils, from the gas distributor 112. Step 320 can be performed following step 318 or simultaneously with step 318. Moving the pedestal 104 to the third distance increases the breakdown voltage required to drive the DC plasma into an arc. By moving the pedestal 104 to the third distance, greater than the second distance, prior to step 320, plasma generation in the process chamber 100 is stopped or reduced prior to step 322, and application of RF power is stopped.

[0048]

[0053] Steps 302, 304, 306, 308, 310, 312, 314, 316, 318, 320, 322, 324, and 326 are described in methods 300A and 300B as being completed successively to one another. In alternative embodiments, multiple of the steps of methods 300A and 300B may be performed simultaneously. In some embodiments, steps 310 and 312 are performed simultaneously. In some exemplary embodiments, steps 322 and 324 are performed simultaneously.

[0049]

[0054] Turning off the DC chucking voltage provided by the power supply 132 after turning off the RF power allows for control of the position of the substrate 107 over the patterned surface 142 through steps 302, 304, 306, 308, 310, 312, 314, 316, 318, 310, 322, and 324. This position control helps stabilize the temperature of the substrate 107 relative to the patterned surface 142 and helps prevent backside damage caused by shifting of the substrate 107 during processing. In addition, after the RF power is turned off, the DC chucking voltage remains elevated to the DC chucking voltage described in step 316, which is sufficient to maintain the substrate 107 in the correct position without plasma discharge. Another benefit of the method described herein is the elapsed time to complete the process. One aspect of obtaining and maintaining thermal equilibrium is time. Position control is improved due to the chucking voltages applied throughout steps 304, 306, 308, 310, 312, 314, 316, 318, 320, 322, and 324. The improved position control allows the substrate 107 to be chucked and acted upon by the heater for a longer period of time. The extended time allows relaxation of the substrate 107 around the posts 210 and prevents backside damage.

[0050]

[0055] For steps 304-326, it is advantageous to control the position of the substrate 107 on the patterned surface 142. Previous attempts to chuck the substrate 107 before moving the substrate 107 to the second spacing result in DC-based electrostatic discharge of the first gas. Electrostatic discharge of the first gas leads to hardware damage and defects in the substrate. The method presented herein prevents electrostatic discharge of the first gas and allows chucking of the substrate 107 earlier in the method.

[0051]

[0056] 4 is a graph 400 illustrating the relationship of process parameters for steps included in the method disclosed herein. The graph 400 displays process conditions for the spacing 402 between the pedestal 104 and the gas distributor 112, the pressure 404 in the process chamber 100, the flow rate of a first process gas 406, the flow rate of a carrier gas 408, the flow rate of a second process / deposition gas 410, the applied DC chucking voltage 412, and the RF power 414 during different times during the method described herein. The graph 400 displays process parameters for one embodiment of steps 302, 304, 306, 308, 310, 312, 314, 316, 318, 310, 322, 324, and 326. However, other process configurations are contemplated.

[0052]

[0057] Graph 400 is only one exemplary embodiment of how the process parameters and the relationships of each process parameter may be utilized. In other embodiments, each parameter may follow a different path over time. In some embodiments, the slope of each parameter may be greater or less than the slope of the parameters disclosed herein. In some embodiments, steps 302, 304, 306, 308, 310, 312, 314, 316, 318, 310, 322, 324, and 326 may be slightly rearranged and some steps may be performed simultaneously, which are not disclosed in graph 400.

[0053]

[0058] The combination of spacing, pressure, process gas, and chucking voltage utilized in the methods described herein allows for chucking of the substrate during introduction and movement of the substrate. The combination of one or more of these factors mitigates unintended plasma formation and electrostatic discharge adjacent to the substrate. The methods herein provide improved processing over conventional methods, since unintended plasma formation and electrostatic discharge can lead to hardware damage and substrate defects. In the embodiments disclosed herein, the spacing, pressure, gas composition, and / or chucking voltage are controlled to prevent the process gas from arcing and unintended plasma formation.

[0054]

[0059] While the forgoing is directed to implementations of the present invention, other and further implementations of the invention may be devised without departing from the basic scope thereof, the scope of the invention being determined by the claims that follow.

Claims

1. 1. A method for processing a substrate in a process chamber, comprising: applying a direct current to an electrode disposed within a pedestal on which the substrate is disposed within a process chamber; flowing one or more first process gases including helium into the process chamber through a showerhead following application of the direct current to the electrodes; applying radio frequency (RF) power at a first RF power level to the showerhead in the process chamber subsequent to flowing the one or more first process gases through the showerhead into the process chamber; flowing one or more second process gases into the process chamber while removing the one or more first process gases from the process chamber; applying a plasma generated from at least one of the one or more first process gases or the one or more second process gases to the substrate subsequent to applying the RF power at the first RF power level; increasing the RF power to a second RF power level at least one of before and during application of the plasma to the substrate; following increasing the RF power to the second RF power level, flowing the one or more first process gases into the process chamber while removing the one or more second process gases from the process chamber; subsequent to applying the plasma to the substrate, ceasing the application of the RF power; subsequent to ceasing the application of the RF power, removing the one or more first process gases from the process chamber; and terminating the application of the DC current following removal of the one or more first process gases following cessation of the application of the RF power. The method includes:

2. 10. The method of claim 1, wherein applying the direct current to the electrode further comprises applying a DC voltage of 300 to 500 volts, and applying the RF power to the showerhead further comprises applying a power of 100 to 6000 watts.

3. 3. The method of claim 2, wherein a pressure in the process chamber during processing of the substrate is between 5 Torr (666 Pa) and 15 Torr (2000 Pa) and a spacing between the showerhead and the pedestal is between 450 mils (11.43 millimeters) and 750 mils (19.05 millimeters).

4. 1. A method for processing a substrate, comprising the steps of: (a) positioning the substrate on a surface of a pedestal in a process chamber, the pedestal being a first distance from a showerhead; (b) applying a DC voltage at a first DC voltage level to an electrode disposed within the pedestal to chuck the substrate; (c) flowing one or more first process gases comprising helium through the showerhead and into the process chamber; (d) applying RF power to the showerhead in the process chamber at a first RF power level; (e) flowing one or more second process gases into the process chamber while removing the one or more first process gases from the process chamber; (f) increasing the DC voltage and the RF power to a second DC voltage level and a second RF power level at least one of before or during application of a plasma generated from at least one of the one or more first process gases or the one or more second process gases to the substrate; (g) reducing the DC voltage and the RF power to a third DC voltage level and a third RF power level after processing the substrate; (h) flowing the one or more first process gases into the process chamber while removing the one or more second process gases from the process chamber; (i) moving the pedestal to a second spacing from the showerhead within the process chamber; (j) stopping the application of the RF power to the showerhead; (k) removing the one or more first process gases from the process chamber; and (l) ceasing the application of the DC voltage to the electrodes. The method includes:

5. 5. The method of claim 4, wherein the first spacing is between 450 mils (11.43 mm) and 750 mils (19.05 mm).

6. 5. The method of claim 4, wherein the second spacing is between 200 mils (5.08 mm) and 400 mils (10.16 mm).

7. 5. The method of claim 4, wherein the first DC voltage level is between 300 volts and 500 volts.

8. The method of claim 4 , wherein the first RF power level is greater than 100 Watts.

9. 5. The method of claim 4, wherein the second DC voltage level is between 800 volts and 1100 volts.

10. The method of claim 4 , wherein the second RF power level is greater than 1000 Watts.

11. 5. The method of claim 4, wherein the pressure in the process chamber during processing of the substrate is from 5 Torr (666 Pa) to 15 Torr (2000 Pa).

12. 5. The method of claim 4, wherein the third DC voltage level is between 300 volts and 500 volts.

13. 1. A method for processing a substrate, comprising: positioning the substrate on a surface of a pedestal, the pedestal being a first distance from a showerhead within a process chamber; applying a DC voltage to an electrode disposed within the pedestal at a first DC voltage; flowing a first process gas comprising helium through the showerhead into the process chamber after applying the DC voltage at a first DC voltage level; applying radio frequency (RF) power to the showerhead in the process chamber at a first RF power level; moving the pedestal to a second spacing from the showerhead, the second spacing being closer to the showerhead than the first spacing; flowing a second process gas mixture comprising at least one of tungsten hexafluoride, diborane, or tungsten pentacarbonyl 1-methylbutylisonitrile into the process chamber through the showerhead while removing the first process gas from the process chamber; ramping the DC voltage and the RF power to a second DC voltage level and a second RF power level at least one of before and during application of a plasma generated from at least one of the first process gas or the second process gas mixture to the substrate; reducing the DC voltage and the RF power to a third DC voltage level and a third RF power level after applying the plasma to the substrate; after applying the plasma to the substrate, removing the second process gas mixture from the process chamber while flowing the first process gas into the process chamber through the showerhead; moving the pedestal within the process chamber to a third distance from the showerhead; ceasing the application of the RF power; removing the first process gas from the process chamber after ceasing the application of the RF power; and ceasing the application of the DC voltage after removing the first process gas from the process chamber after ceasing the application of the RF power. The method includes:

14. 14. The method of claim 13, wherein the pedestal is spaced between 450 mils (11.43 millimeters) and 750 mils (19.05 millimeters) from the showerhead at the first spacing.

15. 15. The method of claim 14, wherein the first DC voltage level is between 300 volts and 500 volts.

16. 14. The method of claim 13, wherein the pressure in the process chamber during processing of the substrate following flowing the first process gas into the process chamber is from 5 Torr (666 Pa) to 15 Torr (2000 Pa).

17. 16. The method of claim 15, wherein the second DC voltage level is between 800 volts and 1100 volts, and the second process gas mixture further comprises argon, propene, or both argon and propene.

18. The method of claim 1, wherein the pedestal has a patterned surface.

19. The method of claim 18, wherein the patterned surface comprises a plurality of posts.

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