High quantum efficiency dry resist for low dose EUV irradiation

Abstract

The present disclosure provides a module for producing metal-containing films that includes a reaction chamber, an inlet for supplying an organometallic precursor to the reaction chamber, and an inlet for supplying a reactive gas species to react with the organometallic precursor to form the metal-containing film. The reactive gas species include elements having 3-5 valence electrons, as well as hydrogen, C 1 ~C 3 Alkyl, and C 1 ~C 3 The present disclosure further relates to methods of producing metal-containing films and associated semiconductor structures.

Description

[Technical field]

[0001] The present disclosure generally relates to semiconductor manufacturing processes and associated modules. Specifically, the present disclosure relates to the formation of photopatternable metal-containing films that can function as photoresists (PR) for extreme ultraviolet (EUV) photolithography processes. The present disclosure further relates to semiconductor structures that contain PR residues. [Background technology]

[0002] One of the key requirements in semiconductor manufacturing is the reliable production of nanometer features. As integrated circuit (IC) technology products continue to shrink, the size and pitch dimensions of circuit features place further demands on processing power. Scaling of features on advanced semiconductor integrated circuits (ICs) and other devices is dynamic lithography to improve resolution.

[0003] EUV lithography can extend lithography technology beyond its optical limits by moving to smaller imaging source wavelengths achievable with current photolithography methods, thereby patterning small, critical dimension features. In EUV photolithography, patterns are printed by emitting photons from a photon source onto a mask, printing the pattern onto a photosensitive PR, thereby causing the PR to undergo chemical reactions that remove certain portions of the PR to form the pattern after development.

[0004] Conventional lithography utilizes polymer-based chemically amplified resists (CARs), so-called wet PRs, which are patterned by a typical spin-on coating process as a whole. CARs can be used as radiation-patterned resists, whereby the radiation pattern is used to change the chemical structure of the CAR that corresponds to the pattern. Because the quantum efficiency of CARs is low, thick CARs must be used for EUV lithography to absorb enough EUV light to initiate the chemical reaction. Thin PRs are required due to the shrinking size of circuits, as thick CARs no longer meet the demands for advanced technology nodes, such as 3mm (N3), 2mm (N2) or even beyond. An alternative to CARs are directly photopatternable metal oxide-containing films, so-called dry PRs. Directly photopatternable metal oxide-containing films have an overall improved EUV quantum efficiency compared to CARs, making them promising candidates to replace CARs. However, the use of directly photopatternable metal oxide-containing films, such as CoO, leads to very high chip fabrication costs.

[0005] Besides ensuring that available thickness meets the demands of advanced technology nodes, new dry PRs with high EUV quantum efficiency are urgently needed to reduce IC manufacturing costs. Summary of the Invention

[0006] SUMMARY The following presents a simplified summary of essential features of the disclosure in order to provide a basic understanding of some aspects.

[0007] The inventors have unexpectedly found that the metal-containing films of the present disclosure exhibit a dramatic increase in EUV quantum efficiency, which allows for a significant reduction in the EUV radiation dose under the same through-the-lens (TTL) conditions, making the metal-containing films of the present disclosure particularly suitable for lithography with very low EUV radiation doses.

[0008] In some embodiments, the present disclosure provides a module for fabricating a metal-containing film, the module comprising a reaction chamber, an inlet for supplying an organometallic precursor to the reaction chamber, and an inlet for supplying a reactive gas species to react with the organometallic precursor to form the metal-containing film. The reactive gas species comprises an element having 3-5 valence electrons and one or more radicals selected from hydrogen, C1-C3 alkyl, and C1-C3 alkoxyl.

[0009] In some embodiments, the present disclosure provides a method of fabricating a metal-containing film. The method includes generating a metal-containing film by reacting an organometallic precursor with a reactive gas species. The reactive gas species includes an element having 3-5 valence electrons and one or more radicals selected from hydrogen, C1-C3 alkyl, and C1-C3 alkoxyl.

[0010] In some embodiments, the present disclosure provides a semiconductor structure containing residue of a metal-containing film that has been subjected to a development process, the semiconductor structure comprising a substrate, one or more features on the substrate, and residue of the metal-containing film.

[0011] Aspects of certain embodiments of the present disclosure will be readily understood from the following detailed description when read in conjunction with the accompanying drawings, in which it is noted that the various features may not be drawn to scale and that dimensions of the various features may be arbitrarily expanded or reduced for clarity of illustration. [Brief description of the drawings]

[0012] [Figure 1] FIG. 2 illustrates a layout of a module according to one embodiment of the present disclosure. [Figure 2(a)] FIG. 1 illustrates an exposure process for a metal-containing film according to one embodiment of the present disclosure. [Figure 2(b)] FIG. 1 illustrates a development process for a metal-containing film according to one embodiment of the present disclosure. [Figure 3(a)]FIG. 1 illustrates a process for transferring a pattern defined on a metal-containing film to a support material or substrate disposed on a surface of the metal-containing film opposite the surface that is subjected to EUV irradiation, according to one embodiment of the present disclosure. [Figure 3(b)] FIG. 3(b) illustrates a process for removing a patterned metal-containing film from a support material or substrate of FIG. 3(a) according to one embodiment of the present disclosure. [Figure 3(c)] FIG. 3(b) illustrates the presence of metal-containing film residue on a support material or substrate according to one embodiment of the present disclosure after the removal process illustrated in FIG. 3(b). DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] For clarity and brevity of the drawings, the same reference numerals in different drawings refer to the same components unless otherwise specified. In addition, in order to simplify the description, the description and details of well-known steps and components may be omitted. As used herein, the words "approximately," "substantially," or "basically" mean that the values ​​of the components have parameters that are expected to be close to the specified values ​​or locations. However, as is well known in the art, there will always be small differences that prevent a value or location from being exactly the specified value or location. It is recognized in the art that deviations of up to at least ten percent (10%) (and even up to twenty percent (20%) for some components, including semiconductor doping concentrations) are reasonable deviations from the ideal goal of being precisely described. Terms such as "first," "second," "third," and the like (used as part of the names of components) in the claims and / or in certain embodiments are used to distinguish between similar components, but do not necessarily describe an order in time, space, order, or in any other way. It is to be understood that such terms may be substituted under appropriate circumstances, and that the embodiments described herein may be operated in other sequences than those described or illustrated herein. The term "some embodiments" means that the particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present disclosure. Thus, the phrase "in some embodiments" appearing in various places throughout this specification does not necessarily refer to the same embodiment, but may sometimes refer to the same embodiment. In addition, it will be apparent to one skilled in the art that the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0014] As used herein, "positive PR" refers to a PR that transforms exposed regions into selectively removable regions. The term "negative PR" refers to a PR that renders unexposed regions more easily removable. As used herein, the term "quantum efficiency" is defined as the ratio of the number of primary electrons generated per unit volume of the PR to the number of EUV photons at a wavelength of 13.5 nm that are incident on the unit volume. The compositional or structural parameters of the molecules or semiconductors described herein can be verified by any known material characterization evaluation method, such as RBS, Raman, XRD, FTIR, TEM, SEM, etc.

[0015] The following disclosure provides various embodiments or examples for implementing various features of the present disclosure. Specific examples of components and arrangements are described below. Of course, this description is merely an example and is not intended to be limiting. In this application, in the following description, a description of a first feature formed on or above a second feature may include an embodiment formed by direct contact between the first feature and the second feature, and may further include an embodiment in which an additional feature may be formed between the first feature and the second feature to enable the first feature and the second feature to not be in direct contact. In addition, in this application, reference signs and / or letters may be repeated in the examples. This repetition is for simplicity and clarity, and does not indicate a relationship between the various embodiments and / or configurations described.

[0016] The embodiments of the present disclosure are described in detail below. However, it should be understood that many applicable concepts provided by the present disclosure may be implemented in a number of specific environments. The specific embodiments described are merely examples and are not intended to limit the scope of the present disclosure.

[0017] A preferred dry PR is an EUV absorber, e.g., with an absorption coefficient of 2 μm -1It is an EUV absorber that can exhibit a relatively broad absorption profile, high melting point, low malleability / high physical stability, and can be easy to deposit. Typically, dry PRs with higher quantum efficiency have a lower dose-to-clear thickness and vice versa. In the case of negative PRs, the strongly absorbed light sensitizes the PR, e.g., molecules with a cross-linking effect, such that the exposed parts are more resistant to active species during development than the non-exposed parts. In view of this, it is an objective of the present disclosure to provide a metal-containing film with improved quantum efficiency, either as a directly photopatternable film or as a dry PR. In this regard, a first aspect of the present disclosure is to provide a module for producing said metal-containing film.

[0018] 1 shows a module (1) according to one embodiment of the present disclosure, comprising a reaction chamber (11), an inlet (12) for supplying an organometallic precursor (121) to the reaction chamber (11), and an inlet (13) for supplying reactive gas species (131) to react with the organometallic precursor (121) to form a metal-containing film (14), the reactive gas species (131) comprising an element having 3-5 valence electrons and one or more radicals selected from hydrogen, C1-C3 alkyl, and C1-C3 alkoxyl.

[0019] Optionally, the metal-containing film (14) may be formed on a support material or substrate (15). The support material or substrate (15) has a surface (151) and another surface (152) opposite the surface (151), and the metal-containing film (14) is created on the surface (151). The metal-containing film (14) may be in direct contact with the surface (151). The metal-containing film (14) may not be in direct contact with the surface (151). The material of the support material or substrate (15) is not particularly limited. Any support material or substrate used in a typical semiconductor manufacturing process is suitable for creating the metal-containing film (14). Examples of the support material or substrate (15) include, but are not limited to, Si, sapphire, GaN, ZnO, metals (e.g., Al, Cu, Ni, or Au), dielectrics (e.g., oxides or nitrides), polymers, organometallic films, etc., in single crystal, polycrystalline, or amorphous form. The structure of surface (151) or (152) is not particularly limited. In some embodiments, surface (151) may be a plane having a root mean square (RMS) roughness of less than 10 Å, for example 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10 Å. In other embodiments, surface (151) may have one or more features (not shown in FIG. 1 ) that are in direct contact with surface (151). In some embodiments, one or more features extend outwardly along a direction perpendicular to surface (151) with a length of 10 Å or more, specifically 10 Å to 1 μm, more preferably 10 Å to 100 nm. Examples of lengths of the feature or features extending along a direction perpendicular to the surface (151) include, but are not limited to, 10 Å, 20 Å, 30 Å, 40 Å, 50 Å, 60 Å, 70 Å, 80 Å, 90 Å, 100 Å, 200 Å, 300 Å, 400 Å, 500 Å, 600 Å, 700 Å, 800 Å, 900 Å, 100 nm, 120 nm, 140 nm, 150 nm, 160 nm, 180 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, or 1 μm. The feature or features may be periodically disposed on the surface (151). The feature or features may be randomly disposed on the surface (151).

[0020] The module (1) can be a chemical vapor deposition (CVD) or atomic layer deposition (ALD) module. The reaction chamber (11) serves to accommodate the organometallic precursor (121) and the reactive gas species (131) and to provide a space to accommodate the reaction occurring between the organometallic precursor (121) and the reactive gas species (131). The arrangement or type of the reaction chamber (11) is not particularly limited. An inert gas plasma (not shown) may be optionally provided in the reaction chamber (11) to promote the reaction between the organometallic precursor (121) and the reactive gas species (131). The inlet (12) serves to supply the organometallic precursor (121) to the reaction chamber (11). The arrangement or type of the inlet (12) is not particularly limited. The inlet (13) serves to supply the reactive gas species (131) to the reaction chamber (11). The arrangement or type of the inlet (13) is not particularly limited. A mass flow controller (MFC) may be installed at inlet (12) to control the flow of organometallic precursor (121) in reaction chamber (11). An MFC may be installed at inlet (13) to control the flow of reactive gas species (131) in reaction chamber (11).

[0021] A method for creating a metal-containing film (14) can also be understood in light of Figure 1. According to one embodiment of the present disclosure, a metal-containing film (14) can be created and deposited on a surface (151) of a support material or substrate (15) by reacting an organometallic precursor (121) with a reactive gas species (131) comprising an element having 3-5 valence electrons and one or more radicals selected from hydrogen, C1-C3 alkyl, and C1-C3 alkoxyl. The deposition may be performed by CVD or ALD.

[0022] The elements having 3 to 5 valence electrons described herein are preferably selected from group IIIA elements, group IVA elements, and group VA elements. The elements having 3 valence electrons are preferably selected from group IIIA elements. More preferably, the elements having 3 valence electrons are B, Al, Ga, or In. The elements having 4 valence electrons are preferably selected from group IVA elements. More preferably, the elements having 4 valence electrons are C, Si, Ge, or Sn. The elements having 5 valence electrons are preferably selected from group VA elements. More preferably, the elements having 5 valence electrons are N, P, As, or Sb.

[0023] The radical selected from hydrogen, C1-C3 alkyl, and C1-C3 alkoxyl as described herein is preferably H, CH3, or OCH3. More preferably, the reactive gas species (131) is B2H6, CH4, SiH4, GeH4, SnH4, NH3, PH3, AsH3, or SbH3. Surprisingly, it has been found that the use of the reactive gas species (131) according to the present disclosure can promote the establishment of chemical bonds between the metal element of the organometallic precursor (121) and an element having 3 to 5 valence electrons of the reactive gas species (131), which plays an important role in improving the quantum efficiency of the metal-containing film (14), as discussed in the following paragraphs.

[0024] The organometallic precursor (121) preferably has the following formula: M(R 1 ) w (R 2 ) x (R 3 ) y (R 4 ) z wherein M represents a divalent to tetravalent metal element; R 1 ~R 4 each independently represents a halo, a C1-C6 alkyl, a C1-C6 alkoxyl, an amido group, a C1-C6 alkylamino group, or a (di-C1-C6 alkyl)amino group; w, x, y, and z each independently represent an integer of 0 to 4; w+x+y+z is between 2 and 4, and R 1 , R 2 , R 3 , and R 4 At least one of these represents a C1 to C6 alkyl, a C1 to C6 alkoxyl, an amido group, a C1 to C6 alkylamino group, or a (di-C1 to C6 alkyl)amino group.

[0025] M preferably represents Ti, Zn, Zr, Ru, Sn, Sb, or Hf, more preferably Sn or Sb. 1 ~R 4 In the formula (I), halo is preferably F, Cl, Br, or I, more preferably F or Cl. Preferably, M and R 1 ~R 4 is selected from the following combinations: TIFF0007625723000001.tif255170TIFF0007625723000002.tif255170TIFF0007625723000003.tif211170

[0026] C1-C6 alkyl is preferably -CH3, -C2H5, -C3H7, -C4H9, -C5H 11 , or -CH 13 and more preferably -CH3 or -C2H5. C1-C6 alkoxyl is preferably -OCH3, -OC2H5, -OC3H7, -OC4H9, -OC5H 11 , or -OC6H 13 , more preferably -OCH3 or -OC2H5. An amide group is preferably -NH2. An alkylamino group is preferably -NHCH3, -NHC2H5, -NHC3H7, -NHC4H9, -NHC5H 11 , or -NHC6H 13 and more preferably -NHCH3 or -NHC2H5. The (di-C1-C6 alkyl)amino group is preferably -N(CH3)2, -N(C2H5)2, -N(C3H7)2, -N(C4H9)2, -N(C5H 11 )2, or -N(CH 13)2, more preferably -N(CH3)2 or -N(C2H5)2.

[0027] In some embodiments, the organometallic precursor (121) is Ti(CH3)4, TiCl(CH3)3, TiCl2(CH3)2, TiCl3CH3, ZnClCH3, Zn(CH3)2, Zr(CH3)4, ZrCl(CH3)3, ZrCl2(CH3)2, ZrCl3CH3, Ru(CH3)4, RuCl(CH3)3, RuCl2(CH3)2, RuCl3CH3, Sn(CH3)4, SnCl(CH3)3, SnCl2(CH3)2, SnCl3CH3, SbCl(CH3)2, SbCl2CH3, Sb(CH3)3, Hf(CH3)4, HfCl(CH3)3, HfCl2(CH3)2, HfCl3CH3, Ti(OCH3)4, TiCl(OCH3)3, TiCl2(OCH3)2, TiCl3OCH3, ZnClOCH3, Zn(OCH3)2, Zr(OCH3)4, ZrCl(OCH3)3, ZrCl2(OCH3)2, ZrCl3OCH3, Ru(OCH3)4, RuCl(OCH3)3, RuCl2(OCH3)2, RuCl3OCH3, Sn(OCH3)4, SnCl(OCH3)3, SnCl2(OCH3)2, SnCl3OCH3, SbCl(OCH3)2, SbCl2OCH3, Sb(OCH3)3, Hf(OCH3)4, HfCl(OCH3)3, HfCl2(OCH3)2, HfCl3OCH3, Ti(NH2)4, TiCl(NH2)3, TiCl2(NH2)2, TiCl3NH2, ZnClNH2, Zn(NH2)2, Zr(NH2)4, ZrCl(NH2)3, ZrCl2(NH2)2, ZrCl3NH2, Ru(NH2)4, RuCl(NH2)3, RuCl2(NH2)2, RuCl3NH2, Sn(NH2)4, SnCl(NH2)3, SnCl2(NH2)2, SnCl3NH2, SbCl(NH2)2, SbCl2NH2, Sb(NH2)3, Hf(NH2)4, HfCl(NH2)3, HfCl2(NH2)2, HfCl3NH2, Ti(NHCH3)4, TiCl(NHCH3)3, TiCl2(NHCH3)2, TiCl3NHCH3, ZnClNHCH3, Zn(NHCH3)2, Zr(NHCH3)4, ZrCl(NHCH3)3, ZrCl2(NHCH3)2, ZrCl3NHCH3, Ru(NHCH3)4, RuCl(NHCH3)3, RuCl2(NHCH3)2, RuCl3NHCH3, Sn(NHCH3)4, SnCl(NHCH3)3,SnCl2(NHCH3)2, SnCl3NHCH3, SbCl(NHCH3)2, SbCl2NHCH3, Sb(NHCH3)3, Hf(NHCH3)4, HfCl(NHCH3)3, HfCl2(NHCH3)2, HfCl3NHCH3, Ti[N(CH3 )2]4, TiCl[N(CH3)2]3, TiCl2[N(CH3)2]2, TiCl3N(CH3)2, ZnClN(CH3)2, Zn[N(CH3)2]2, Zr[N(CH3)2]4, ZrCl[N(CH3)2]3, ZrCl2[N(CH3)2]2 , ZrCl3N(CH3)2, Ru[N(CH3)2]4, RuCl[N(CH3)2]3, RuCl2[N(CH3)2]2, RuCl3N(CH3)2, Sn[N(CH3)2]4, SnCl[N(CH3)2]3, SnCl2[N(CH3)2]2, Sn It can be Cl3N(CH3)2, SbCl[N(CH3)2]2, SbCl2N(CH3)2, Sb[N(CH3)2]3, Hf[N(CH3)2]4, HfCl[N(CH3)2]3, HfCl2[N(CH3)2]2, or HfCl3N(CH3)2. ,

[0028] The optimized parameters for producing the metal-containing film (14) are as follows: Temperature: 50° C. to 600° C. For example, the lower limit of the temperature range may be 50, 100, 150, 200, 250, 300, 350, 400, 450, 500, or 550° C. The upper limit of the temperature range may be 100, 150, 200, 250, 300, 350, 400, 450, 500, 550, or 600° C. A suitable temperature range for producing a metal-containing film (14) may be a combination of one of the lower limits and one of the upper limits described above. Operating pressure: 100-30000 mTorr. For example, the lower limit of the operating pressure range may be 100, 500, 1000, 2000, 4000, 5000, 6000, 8000, 10000, 12000, 14000, 15000, 16000, 18000, 20000, 22000, 24000, 25000, 26000, or 28000 mTorr. The upper limit of the operating pressure range may be 500, 1000, 2000, 4000, 5000, 6000, 8000, 10000, 12000, 14000, 15000, 16000, 18000, 20000, 22000, 24000, 25000, 26000, 28000, or 30000 mTorr. A suitable operating pressure range for producing the metal-containing film (14) may be a combination of one of the lower limits and one of the upper limits described above. · Flow rate of organometallic precursor (121): 0.01 and 1000 sccm. For example, the lower limit of the flow rate range of the organometallic precursor (121) may be 0.01, 0.05, 0.1, 0.5, 1, 5, 10, 20, 40, 50, 60, 80, 100, 200, 400, 500, 600, or 800 sccm. The upper limit of the flow rate range of the organometallic precursor (121) may be 0.05, 0.1, 0.5, 1, 5, 10, 20, 40, 50, 60, 80, 100, 200, 400, 500, 600, 800, or 1000 sccm. The flow rate range of the organometallic precursor (121) suitable for producing the metal-containing film (14) may be a combination of one of the lower limits and one of the upper limits described above. · Flow rates of reactive gas species (131): 10 and 10000 sccm. For example, the lower end of the flow rate range of reactive gas species (131) may be 10, 50, 100, 500, 1000, 1500, 2000, 2500, 3000, 3500, 4000, 4500, 5000, 5500, 6000, 6500, 7000, 7500, 8000, 8500, 9000, or 9500 sccm. The upper limit of the reactive gas species (131) flow rate range may be 50, 100, 500, 1000, 1500, 2000, 2500, 3000, 3500, 4000, 4500, 5000, 5500, 6000, 6500, 7000, 7500, 8000, 8500, 9000, 9500, or 10000 sccm. A suitable reactive gas species (131) flow rate range for producing a metal-containing film (14) may be a combination of one of the lower limits and one of the upper limits listed above. In some embodiments, when an inert gas plasma is provided in the reaction chamber (11), the plasma power may range from 10 to 1000 W per 12 inch wafer station at an RF frequency of 13.56 MHz, 27.1 MHz, or higher. For example, the lower end of the plasma power range may be 10, 50, 100, 150, 200, 250, 300, 350, 400, 450, 500, 550, 600, 650, 700, 750, 800, 850, 900, or 950 W. For example, the upper end of the plasma power range may be 50, 100, 150, 200, 250, 300, 350, 400, 450, 500, 550, 600, 650, 700, 750, 800, 850, 900, 950, or 1000 W. A suitable plasma power range for producing a metal-containing film (14) may be a combination of one of the lower limits and one of the upper limits described above.

[0029] Thus, the thickness of the metal-containing film (14) produced according to the methods described herein may range from 10 to 2000 Å. For example, the lower limit of the thickness range may be 10, 50, 100, 150, 200, 250, 300, 350, 400, 450, 500, 600, 700, 800, 900, 1000, 1200, 1400, 1500, 1600, or 1800 Å. The upper limit of the thickness range may be 50, 100, 150, 200, 250, 300, 350, 400, 450, 500, 600, 700, 800, 900, 1000, 1200, 1400, 1500, 1600, 1800, or 2000 Å. A thickness range may be a combination of one of the lower limits and one of the upper limits described above.

[0030] Without wishing to be bound by theory, it is believed by the inventors that the chemistry involved in the process of creating the metal-containing film (14) can be illustrated as follows. EXAMPLES

[0031] Example 1 TIFF0007625723000004.tif101170

[0032] Example 2 TIFF0007625723000005.tif101170

[0033] [Example 3] TIFF0007625723000006.tif101170

[0034] Example 4 TIFF0007625723000007.tif105170

[0035] The same reaction chemistries can be applied to other organometallic precursors (121) and reactive gas species (131) as previously described, but will not be repeated here.

[0036] The method according to the present disclosure further includes exposing at least a portion of the metal-containing film (14) to EUV radiation. Figures 2(a) and 2(b) show that the metal-containing film (14), which is sensitive to EUV radiation and generates primary electrons upon absorption of EUV photons, can be directly (i.e., without the use of additional photoresist) patterned by exposure to EUV radiation (2) using a photomask (3) having a predetermined pattern disposed thereon. Figure 2(a) illustrates the exposure step resulting in an unexposed portion (141) and an exposed portion (142) of the metal-containing film (14).

[0037] The metal-containing film (14) according to the present disclosure is an EUV PR. When an EUV photon is absorbed in the metal-containing film (14), photoelectrons are generated. The photoelectrons have energies between about 50 eV or less and about 100 eV or more and are randomly scattered in the metal-containing film (14). As a result, some of these high-energy photoelectrons propagate through the metal-containing film (14) and generate a cascade of secondary electrons via ionization events along the way. For any given photoelectron, several secondary electrons may be generated, which also propagate stochastically. As the secondary electrons propagate through the metal-containing film (14), they cause cross-linking events between the organic groups of the molecules that make up the metal-containing film (14). These electrons increase the extent of chemical reactions in the metal-containing film (14), thus increasing its sensitivity to EUV dose.

[0038] The reaction chemistry associated with the cross-linking event upon exposure in the exposed portion (142) of the metal-containing film (14) exemplified in Examples 1 to 4 is illustrated below.

[0039] Example 5 TIFF0007625723000008.tif65170

[0040] Example 6 TIFF0007625723000009.tif63170

[0041] [Example 7] TIFF0007625723000010.tif68170

[0042] Example 8 TIFF0007625723000011.tif62170

[0043] The same reaction chemistry associated with the crosslinking event upon exposure can be applied to metal-containing films (14) made based on other organometallic precursors (121) and reactive gas species (131) previously described, but will not be repeated here.

[0044] The exposure process allows for patterning of the metal-containing film (14) directly by EUV exposure in a vacuum atmosphere without the use of additional PR. Specifically, the formation, processing, and transportation of the metal-containing film (14) can be performed in a vacuum environment. In contrast to CAR, the wafer containing the metal-containing film (14) according to the present disclosure can be transferred dry from one module (e.g., a module for forming the metal-containing film) to another module (e.g., a module for lithography) so that a "dry-in-dry-out" process can be realized to avoid or reduce moisture degradation. In some embodiments, the module (1) can be integrated into an EUV lithography platform such as a wafer stepper (e.g., a TWINSCAN NXE series platform supplied by ASML), and the support material or substrate (15) on which the metal-containing film (14) is deposited can be transferred under reduced pressure to prevent it from reacting before exposure. Integration with lithography tools is practical because EUV lithography platforms also require significantly reduced pressure environments to prevent strong optical absorption of the incident photons by ambient gases such as H2O and O2.

[0045] The method according to the present disclosure further includes developing the exposed metal-containing film to remove a portion of the metal-containing film. After EUV exposure, the patterned metal-containing film (14) can be developed. FIG. 2(b) shows a subsequent step of developing the patterned metal-containing film (14). The wafer containing the exposed metal-containing film (14) may be moved from the EUV lithography platform to perform pattern development. The non-exposed portion (141) of the metal-containing film (14) shown in FIG. 2(a) is removed, and the exposed portion (142) is retained. Since the molecules in the non-exposed portion (141) are still not crosslinked, the non-exposed portion (141) is less resistant to active species (e.g., from plasma, etching gas, or solution) during development than the exposed portion (142), and therefore can be removed more easily than the exposed portion (142). In some embodiments, the unexposed portions (141) may be removed by conventional plasma ashing, dry etching systems such as reactive ion etching (RIE), or wet development processes. It may be desirable to perform pattern development outside of the EUV lithography system to avoid contamination of the system optics with any incompatible material resulting from cross-linking reactions of the metal-containing film (14).

[0046] The exposed portion (142) contains cross-linked material with a higher molecular weight than the unexposed portion (141), and therefore has significantly reduced solubility in selective organic solvents, and therefore the unexposed portion (141) can be removed in a wet development process using a suitable organic solvent, such as isopropyl alcohol, n-butyl acetate, or 2-heptanone.

[0047] Although the metal-containing film (14) illustrated in the above embodiment functions as a negative PR, the relative concepts according to the present invention can be applied to the metal-containing film (14) when it functions as a positive PR.

[0048] The metal-containing film (14) can act as a hard mask to transfer the pattern to the underlying support material or substrate (15). As shown in FIG. 3(a), the unexposed portion (141) is removed during development, and then the underlying support material or substrate (15) is exposed. By employing a suitable etching means for the support material or substrate (15), the predetermined pattern disposed on the metal-containing film (14) can be successfully transferred to the support material or substrate (15). In some embodiments, the removal of the unexposed portion (141) illustrated in FIG. 2(b) and the underlying support material or substrate (15) illustrated in FIG. 3(a) may be performed sequentially or by the same operation.

[0049] Figure 3(b) illustrates that once a predetermined pattern has been transferred from the metal-containing film (14) to the support material or substrate (15), the exposed portions (142) of the patterned metal-containing film (14) can be correspondingly removed by existing techniques, such as, for example, plasma ashing, dry etching systems (e.g., reactive ion etching (RIE)), or wet etching processes. A recess (not shown) in the support material or substrate (15) may be formed as illustrated in Figure 3(c).

[0050] Generally, due to structural shadowing effects of the circuit, the metal-containing film (14) may not be completely removed if the recess of the support material or substrate (15) is non-planar, for example due to the presence of one or more surface features (153). As shown in FIG. 3(c), which is an enlarged view of the circled area (4) in FIG. 3(b), residues of the exposed portion (142) of the metal-containing film (14) may be present on the support material or substrate (15). In particular, the residues of the exposed portion (142) may be present at corners or edges between the support material or substrate (15) and the feature (153). The support material or substrate (15) and the feature (153) may be of the same material. The support material or substrate (15) and the feature (153) may be of different materials.

[0051] The present disclosure further relates to a semiconductor structure comprising a support material or substrate (15), one or more features (153) on the support material or substrate (15), and a residue of an exposed portion (142) of a metal-containing film (14), the residue comprising a first metal element having a valence of 2-4 chemically bonded to an element having 3-5 valence electrons, and a second metal element having a valence of 2-4.

[0052] The first metal element is preferably surrounded by two or more elements having 3 to 5 valence electrons, and is preferably Ti, Zn, Zr, Ru, Sn, Sb, or Hf.

[0053] The element having 3 to 5 valence electrons is chemically bonded to a divalent to quadruple third transition element. More specifically, the element having 3 to 5 valence electrons is selected from the group IIIA elements, the group IVA elements, and the group VA elements. The element having 3 valence electrons is preferably selected from the group IIIA elements. More preferably, the element having 3 valence electrons is B, Al, Ga, or In. The element having 4 valence electrons is preferably selected from the group IVA elements. More preferably, the element having 4 valence electrons is C, Si, Ge, or Sn. The element having 5 valence electrons is preferably selected from the group VA elements. More preferably, the element having 5 valence electrons is N, P, As, or Sb.

[0054] The second metallic element described herein is Ti, Zn, Zr, Ru, Sn, Sb, or Hf, preferably Sn or Sb.

[0055] The residue may be near or adjacent to the feature 153. The residue may be on top of the feature 153, for example on the side of the feature 153.

[0056] Comparative embodiment In a comparative embodiment using CO as the reactive gas species (131), without being bound by theory, it is believed by the inventors that the chemistry involved in the process of producing a metal-containing film (14) is as follows.

[0057] Example 9 TIFF0007625723000012.tif91170

[0058] Upon EUV exposure, the exposed portions (142) of the metal-containing film (14) will undergo the following cross-linking reaction chemistry:

[0059] [Example 10] TIFF0007625723000013.tif63170

[0060] Surprisingly, it has been found that the absorption efficiency of the metal-containing film (14) according to the present disclosure at EUV 13.5 nm is at least 25, 50, 75, 100, 125, 150, 175, 200, or 250% higher than the absorption efficiency of the metal-containing film (14) formed using carbon dioxide as the reactive gas species (131). In some embodiments, the efficiency of the metal-containing film (14) when used as a PR can be evaluated by flood exposure tests. A flood exposure test according to the present disclosure may include (1) forming a metal-containing film (14) of consistent thickness on multiple regions of a substrate, (2) exposing the metal-containing film (14) to EUV at different doses on the multiple regions, (3) developing the exposed metal-containing film (14), and (4) using extrapolation to determine a minimum EUV exposure dose (critical dose) that results in complete retention of the metal-containing film (14) after the developing step. The metal-containing film (14) according to the present disclosure requires a lower critical dose compared to a metal-containing film (14) formed using carbon dioxide as the reactive gas species (131). The critical dose is inversely proportional to the absorption efficiency of the metal-containing film (14).

[0061] In some embodiments according to the present disclosure, the metal-containing film (14) includes 7 tin atoms in the initial molecule and has an absorption efficiency 75% higher than that of the metal-containing film of the comparative embodiment. In some embodiments according to the present disclosure, the metal-containing film (14) includes 10 tin atoms in the initial molecule and has an absorption efficiency 150% higher than that of the metal-containing film of the comparative embodiment. Without being bound by theory, it is believed that the improved absorption efficiency of the metal-containing film (14) according to the present disclosure is due to the increased number of metals per unit volume of the metal-containing film (14). Furthermore, as mentioned above, the quantum efficiency of the PR is defined as the ratio of the number of primary electrons generated per unit volume of the PR to the number of EUV photons incident on the unit volume. It is expected that the improved absorption efficiency of the metal-containing film (14) according to the present disclosure can be significantly improved accordingly.

[0062] For ease of description, spatial terms such as "under," "below," "lower portion," "above," "upper portion," "lower portion," "left side," "right side," and the like may be used to describe the relationship of one component or feature shown in the figures to another component or feature. The spatial terms are intended to encompass various orientations of the device during use or operation in addition to the orientation shown in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein may be used for explanation purposes as appropriate. When one component is "connected" or "coupled" to another component, it should be understood that the one component may be directly connected or coupled to the other component or there may be intermediate components present.

[0063] As used herein, the terms "approximately," "essentially," or "substantially" are used to describe and account for small variations. When used in conjunction with an event or circumstance, the term may refer to the exact occurrence of that event or circumstance, or to the approximately occurrence of that event or circumstance. The term "about," when used herein in reference to a given value or range, generally means within ±10%, ±5%, ±1%, or ±0.5% of the given value or range. The range may be expressed herein as from one endpoint to another endpoint, or between two endpoints. Unless otherwise stated, all ranges given in this disclosure include the endpoints. The term "substantially coplanar" may refer to two surfaces positioned within a few micrometers (μm) along the same plane, for example, positioned within 10 μm, within 5 μm, within 1 μm, or within 0.5 μm along the same plane. The term may refer to values ​​that are within ±10%, ±5%, ±1%, or ±0.5% of the mean of a value when reference is made to "substantially" the same numerical value or characteristic.

[0064] Some embodiments and detailed features of the present disclosure are briefly described above. The embodiments described in the present disclosure may be readily used as a basis for designing or modifying other processes and structures to achieve the same or similar purposes and / or obtain the same or similar advantages incorporated in the embodiments of the present disclosure. Such equivalent constructions do not depart from the spirit and scope of the present disclosure, and various changes, substitutions, and alterations may be made thereto without departing from the spirit and scope of the present disclosure.

Claims

1. A reaction chamber; an inlet for supplying an organometallic precursor to the reaction chamber; an inlet for supplying a reactive gas species to react with the organometallic precursor to form a metal-containing film; A module comprising: The reactive gas species is selected from elements having 3 to 5 valence electrons, as well as hydrogen, C １ ~C ３ Alkyl, and C １ ~C ３ alkoxyl; The metal-containing film has an absorption efficiency at 13.5 nm extreme ultraviolet (EUV) that is at least 25%, 50%, 75%, 100, 125, 150, 175, 200, or 250% greater than an absorption efficiency at 13.5 nm extreme ultraviolet (EUV) of a metal-containing film formed using carbon dioxide as the reactive gas species.

2. The module of claim 1 , wherein the metal-containing film is an extreme ultraviolet (EUV) photoresist.

3. 2. The module of claim 1, wherein the element having 3 to 5 valence electrons is selected from Group IIIA elements, Group IVA elements, and Group VA elements.

4. 2. The module of claim 1, wherein the element having 3 to 5 valence electrons is B, Al, Ga, In, C, Si, Ge, Sn, N, P, As, or Sb.

5. The radical is H, CH ３ , or OCH ３ The module of claim 1 .

6. The reactive gas species is B ２ H ６ , C.H. ４ , SiH ４ , GeH ４ , SnH ４ , N.H. ３ , P.H. ３ , A.S.H. ３ , or SbH ３ The module of claim 1 .

7. The organometallic precursor has the following formula: M(R １ ) ｗ (R ２ ) ｘ (R ３ ) ｙ (R ４ ) ｚ wherein M represents a divalent to tetravalent metal element; R １ ~R ４ are each independently halo, C １ ~C ６ Alkyl, C １ ~C ６ Alkoxyl, amide group, C １ ~C ６ an alkylamino group, or (di-C １ ~C ６ represents an alkyl)amino group; w, x, y, and z each independently represent an integer of 0 to 4; w+x+y+z is 2 or more and 4 or less, R １ , R ２ , R ３ , and R ４ At least one of the １ ~C ６ Alkyl, C １ ~C ６ Alkoxyl, amide group, C １ ~C ６ an alkylamino group, or (di-C １ ~C ６ 2. The module of claim 1, wherein the amino group is a cyclic alkyl group.

8. 8. The module of claim 7, wherein M is Ti, Zn, Zr, Ru, Sn, Sb, or Hf.

9. The organometallic precursor is Ti(CH ３ ), ４ TiCl(CH ３ ), ３ TiCl ２ (CH ３ ), ２ TiCl ３ CH ３ , ZnClCH ３ , Zn(CH ３ ), ２ Zr(CH ３ ), ４ ZrCl(CH ３ ), ３ ZrCl ２ (CH ３ ), ２ ZrCl ３ CH ３ , Ru(CH ３ ), ４ RuCl(CH ３ ), ３ RuCl ２ (CH ３ ), ２ RuCl ３ CH ３ , Sn(CH ３ ), ４ SnCl(CH ３ ), ３ SnCl ２ (CH ３ ), ２ SnCl ３ CH ３ , SbCl(CH ３ ), ２ SbCl ２ CH ３ , Sb(CH ３ ), ３ Hf(CH ３ ), ４ HfCl(CH ３ ), ３ HfCl ２ (CH ３ ), ２ HfCl ３ CH ３ , Ti(OCH ３ ), ４ TiCl(OCH ３ ), ３ TiCl ２ (OCH) ３ ) ２ 、TiCl ３ OCH ３ 、ZnClOCH ３ ,Zhn(OCH ３ ) ２ , Zhr(OCH ３ ) ４ ,ZhrCl(OCH ３ ) ３ 、ZrCl ２ (OCH) ３ ) ２ 、ZrCl ３ OCH ３ ,Rhu (Ouch) ３ ) ４ ,RhuCl (Ouch) ３ ) ３ 、R･･l ２ (OCH) ３ ) ２ 、R･･l ３ OCH ３ 、Sn(OCH ３ ) ４ 、Snal(OCH ３ ) ３ 、Sn｣l ２ (OCH) ３ ) ２ 、Sn｣l ３ OCH ３ ,SbCl(OCH ３ ) ２ 、Sb｣l ２ OCH ３ ,Sb (OCH) ３ ) ３ ,Hf(OCH ３ ) ４ 、Hfal(OCH ３ ) ３ 、Hfal ２ (OCH) ３ ) ２ 、Hfal ３ OCH ３ 、Thi(NH ２ ) ４ 、Thiial(NH ２ ) ３ 、TiCl ２ (NH) ２ ) ２ 、TiCl ３ NH ２ 、ZnClNH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、Zn(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、Zr(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> 、ZrCl(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、ZrCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ((NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、ZrCl<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 5u(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> RuCl(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 5uCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ((NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 5uCl<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、Sn(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> 、SnCl(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、SnCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ((NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、SnCl<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、SbCl(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、SbCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、Sb(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、Hf(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> 、HfCl(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、HfCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ((NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、HfCl<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、Ti(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> 、TiCl(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、TiCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ((NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、TiCl<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> I'm sorry<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、Zn(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、Zr(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> 、ZrCl(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、ZrCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ((NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、ZrCl<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> Ru(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> 、RuCl(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 5uCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ((NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 5uCl<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、Sn(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> 、SnCl(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、SnCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ((NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、SnCl<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、SbCl(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、SbCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、Sb(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、Hf(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> 、HfCl(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、HfCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ((NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、HfCl<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、Ti[N(CH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ]<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> 、TiCl[N(CH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ]<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、TiCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> [N(CH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ]<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、TiCl<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> N(CH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> I'm sorry<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、Zn[N(CH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ]<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、Zr[N(CH ３ ) ２ ] ４ 、ZrCl[N(CH ３ ) ２ ] ３ 2 ２ [N(CH ３ ) ２ ] ２ 2 ３ N(CH ３ ) ２ I'm sorry ３ ) ２ ] ４ 、RuCl[N(CH ３ ) ２ ] ３ RuCl ２ [N(CH ３ ) ２ ] ２ RuCl ３ N(CH ３ ) ２ Sn[N(CH ３ ) ２ ] ４ SnCl[N(CH ３ ) ２ ] ３ SnCl ２ [N(CH ３ ) ２ ] ２ SnCl ３ N(CH ３ ) ２ 、SbCl[N(CH ３ ) ２ ] ２ SbCl ２ N(CH ３ ) ２ 、Sb[N(CH ３ ) ２ ] ３ 、Hf[N(CH ３ ) ２ ] ４ 、HfCl[N(CH ３ ) ２ ] ３ HfCl ２ [N(CH ３ ) ２ ] ２ 、またはHfCl ３ N(CH ３ ) ２ The module of claim 7 .

10. Elements with 3 to 5 valence electrons, hydrogen, C １ ~C ３ Alkyl, and C １ ~C ３ and producing a metal-containing film by reacting an organometallic precursor with a reactive gas species comprising one or more radicals selected from an alkoxyl. Including, 14. The method of claim 13, wherein the absorption efficiency of the metal-containing film at 13.5 nm extreme ultraviolet (EUV) is at least 25%, 50%, 75%, 100, 125, 150, 175, 200, or 250% greater than the absorption efficiency of a metal-containing film at 13.5 nm extreme ultraviolet (EUV) radiation formed using carbon dioxide as the reactive gas species.

11. The method of claim 10 , wherein the metal-containing film is sensitive to extreme ultraviolet (EUV) radiation.

12. The method of claim 10, wherein the element having 3 to 5 valence electrons is selected from Group IIIA elements, Group IVA elements, and Group VA elements.

13. 11. The method of claim 10, wherein the element having 3 to 5 valence electrons is B, Al, Ga, In, C, Si, Ge, Sn, N, P, As, or Sb.

14. The radical is H, CH ３ , or OCH ３ The method according to claim 10, wherein

15. The reactive gas species is B ２ H ６ , C.H. ４ , SiH ４ , GeH ４ , SnH ４ , N.H. ３ , P.H. ３ , A.S.H. ３ , or SbH ３ The method according to claim 10, wherein

16. The organometallic precursor has the following formula: M(R １ ) ｗ (R ２ ) ｘ (R ３ ) ｙ (R ４ ) ｚ wherein M represents a divalent to tetravalent metal element; R １ ~R ４ are each independently a halogen element, C １ ~C ６ Alkyl, C １ ~C ６ Alkoxyl, amide group, C １ ~C ６ an alkylamino group, or (di-C １ ~C ６ represents an alkyl)amino group; w, x, y, and z each independently represent an integer of 0 to 4; w+x+y+z is 2 or more and 4 or less, R １ , R ２ , R ３ , and R ４ At least one of the １ ~C ６ Alkyl, C １ ~C ６ Alkoxyl, amide group, C １ ~C ６ an alkylamino group, or (di-C １ ~C ６ The method of claim 10, wherein the aryl group represents an alkyl)amino group.

17. 17. The method of claim 16, wherein the metal element is Ti, Zn, Zr, Ru, Sn, Sb, or Hf.

18. The organometallic precursor is Ti(CH ３ ), TiCl(CH ４ ), TiCl ３ (CH ３ ), TiCl ２ (CH ３ ), TiCl ２ CH ３ , ZnClCH ３ , Zn(CH ３ ), Zr(CH ３ ), ZrCl(CH ２ ), ZrCl ３ (CH ４ ), ZrCl ３ CH ３ , Ru(CH ２ ), RuCl(CH ３ ), RuCl ２ (CH ３ ), RuCl ３ CH ３ , Sn(CH ４ ), SnCl(CH ３ ), SnCl ３ (CH ２ ), SnCl ３ CH ２ , SbCl(CH ３ ), SbCl ３ CH ３ , Sb(CH ４ ), Hf(CH ３ ), HfCl(CH ３ ), HfCl ２ (CH ３ ), HfCl ２ CH ３ , Ti(OCH ３ ), TiCl(OCH ３ ), TiCl ２ ２ ３ ３ ３ ３ ４ ３ ３ ２ ３ ２ ３ ３ ３ ４ ３ ３ ２ ​​​​​​​​​​​​​​​​​​(OCH) ３ ) ２ 、TiCl ３ OCH ３ 、ZnClOCH ３ ,Zhn(OCH ３ ) ２ , Zhr(OCH ３ ) ４ ,ZhrCl(OCH ３ ) ３ 、ZrCl ２ (OCH) ３ ) ２ 、ZrCl ３ OCH ３ ,Rhu (Ouch) ３ ) ４ ,RhuCl (Ouch) ３ ) ３ 、R･･l ２ (OCH) ３ ) ２ 、R･･l ３ OCH ３ 、Sn(OCH ３ ) ４ 、Snal(OCH ３ ) ３ 、Sn｣l ２ (OCH) ３ ) ２ 、Sn｣l ３ OCH ３ ,SbCl(OCH ３ ) ２ 、Sb｣l ２ OCH ３ ,Sb (OCH) ３ ) ３ ,Hf(OCH ３ ) ４ 、Hfal(OCH ３ ) ３ 、Hfal ２ (OCH) ３ ) ２ 、Hfal ３ OCH ３ 、Thi(NH ２ ) ４ 、Thiial(NH ２ ) ３ 、TiCl ２ (NH) ２ ) ２ 、TiCl ３ NH ２ 、ZnClNH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、Zn(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、Zr(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> 、ZrCl(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、ZrCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ((NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、ZrCl<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 5u(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> RuCl(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 5uCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ((NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 5uCl<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、Sn(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> 、SnCl(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、SnCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ((NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、SnCl<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、SbCl(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、SbCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、Sb(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、Hf(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> 、HfCl(NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、HfCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ((NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、HfCl<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> NH<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、Ti(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> 、TiCl(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、TiCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ((NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、TiCl<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> I'm sorry<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、Zn(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、Zr(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> 、ZrCl(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、ZrCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ((NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、ZrCl<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> Ru(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> 、RuCl(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 5uCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ((NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 5uCl<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、Sn(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> 、SnCl(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、SnCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ((NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、SnCl<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、SbCl(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、SbCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、Sb(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、Hf(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> 、HfCl(NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、HfCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ((NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、HfCl<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> NHCH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、Ti[N(CH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ]<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> 、TiCl[N(CH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ]<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> 、TiCl<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> [N(CH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ]<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、TiCl<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> N(CH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> I'm sorry<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、Zn[N(CH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> )<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> ]<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> 、Zr[N(CH ３ ) ２ ] ４ 、ZrCl[N(CH ３ ) ２ ] ３ 2 ２ [N(CH ３ ) ２ ] ２ 2 ３ N(CH ３ ) ２ I'm sorry ３ ) ２ ] ４ 、RuCl[N(CH ３ ) ２ ] ３ RuCl ２ [N(CH ３ ) ２ ] ２ RuCl ３ N(CH ３ ) ２ Sn[N(CH ３ ) ２ ] ４ SnCl[N(CH ３ ) ２ ] ３ SnCl ２ [N(CH ３ ) ２ ] ２ SnCl ３ N(CH ３ ) ２ 、SbCl[N(CH ３ ) ２ ] ２ SbCl ２ N(CH ３ ) ２ 、Sb[N(CH ３ ) ２ ] ３ 、Hf[N(CH ３ ) ２ ] ４ 、HfCl[N(CH ３ ) ２ ] ３ HfCl ２ [N(CH ３ ) ２ ] ２ 、またはHfCl ３ N(CH ３ ) ２ 17. The method of claim 16, wherein:

19. 11. The method of claim 10, further comprising exposing at least a portion of the metal-containing film to extreme ultraviolet (EUV) radiation.

20. 20. The method of claim 19, further comprising developing the exposed metal-containing film to remove a portion of the metal-containing film.

21. The method of claim 10 , wherein the metal-containing film is a component of a semiconductor structure.

22. The method of claim 10 , wherein the metal-containing film is an extreme ultraviolet (EUV) photoresist.

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