Process cell for electric field induced post-exposure bake process

Abstract

Apparatus and methods for substrate processing are described herein. More specifically, the apparatus and methods are directed to an apparatus and method for performing an electric field induced post-exposure bake operation on a semiconductor substrate. The apparatus is a processing module (100) including a top portion (102) having an electrode (400) and a base portion (104) configured to support a substrate (500) on a substrate support surface (159). The top portion (102) and the base portion (104) are actuated towards and away from each other using one or more arms (112) to generate a processing space (404). The processing space (404) is filled with a processing fluid and the processing module (100) is rotated about an axis (A). An electric field is applied to the substrate (500) by the electrode (400) before the processing fluid is pumped out of the processing space (404).

Description

[Technical field]

[0001] The present disclosure relates generally to methods and apparatus for processing substrates, and more particularly to methods and apparatus for improving patterning processes. [Background technology]

[0002]

[0002] Integrated circuits have evolved into complex devices that may contain millions of components (e.g., transistors, capacitors, and resistors) on a single chip. Photolithography is a process that may be used to form components on a chip. In general, the process of photolithography includes several basic steps. First, a photoresist layer is formed on a substrate. Chemically amplified photoresists typically include a resist resin and a photoacid generator. The photoacid generator changes the solubility of the photoresist in the development process when exposed to electromagnetic radiation in a subsequent exposure step. The electromagnetic radiation may have any suitable wavelength (e.g., a 193 nm ArF laser) or may be an electron beam, an ion beam, or other suitable electromagnetic radiation source.

[0003]

[0003] In the exposure step, a photomask or reticle is used to selectively expose certain areas of the substrate to electromagnetic radiation. Other exposure methods include maskless exposure methods, etc. The photoacid generator is decomposed by exposure to light, thereby generating acid, resulting in a latent image of acid in the resist resin. After exposure, the substrate is heated in a post-exposure bake process. During the post-exposure bake process, the acid generated by the photoacid generator reacts with the resist resin, changing the solubility of the resist during the subsequent development process.

[0004]

[0004] After the post-exposure bake, the substrate (particularly the photoresist layer) is developed and rinsed. Depending on the type of photoresist used, the areas of the substrate exposed to electromagnetic radiation are either resistant to removal or more susceptible to removal. After developing and rinsing, the pattern of the mask is transferred to the substrate using a wet or dry etching process.

[0005]

[0005] The evolution of chip design constantly demands faster and denser circuits. The demand for denser circuits leverages the shrinking dimensions of integrated circuit components. As the dimensions of integrated circuit components shrink, more elements can be placed in a given area on a semiconductor integrated circuit. Thus, lithography processes transfer smaller features onto a substrate, and lithography does so accurately, with high precision, and without damage to meet advanced chip design specifications. To transfer features onto a substrate accurately and with high precision, high-resolution lithography utilizes light sources that provide short wavelength radiation. The short wavelengths help to reduce the minimum printable size on a substrate or wafer. However, short wavelength lithography suffers from problems such as low throughput, increased line edge roughness, and / or reduced resist sensitivity.

[0006]

[0006] To improve the exposure / development resolution of lithography, electrode assemblies are used to generate and provide an electric field to a photoresist layer disposed on a substrate before or after the exposure process to modify the chemical properties of the portion of the photoresist layer through which the electromagnetic radiation is transmitted. However, challenges in implementing such systems have not yet been fully overcome. For example, different electric field strengths across the photoresist layer can lead to non-uniform acid generation and deprotection rates, which can adversely affect the patterning of the substrate.

[0007]

[0007] Therefore, there is a need for improved methods and apparatus for electric field induced post-exposure bake processes. Summary of the Invention

[0008]

[0008] In one embodiment, a substrate processing apparatus is described. The substrate processing apparatus includes a support plate, a base portion disposed on the support plate, an upper portion, and a plurality of arms connecting the upper portion and the base portion. The base portion includes a base body, a substrate support plate disposed within the base body, a substrate support surface on the substrate support plate, one or more bearings coupled to the base body and configured to rotate the base body about an axis, and an actuator coupled to the base body and the support plate. The upper portion is disposed above the base portion and the support plate. The upper portion includes an electrode and a lid disposed above the electrode.

[0009]

[0009] In another embodiment, a substrate processing apparatus is described. The substrate processing apparatus includes a support plate, a substrate processing module, an actuator, one or more bearings, and a fluid inlet. The substrate processing module includes a base portion, a top portion, and a plurality of arms connecting the top portion and the base portion. The base portion is disposed on the support plate and includes a base body, a substrate support plate disposed within the base body, and a substrate support surface on the substrate support plate. The top portion is disposed above the base portion and the support plate and includes an electrode having a lower surface disposed parallel to the substrate support surface, and a lid disposed above the electrode. An actuator is coupled to the base body and the support plate. One or more bearings are coupled to the base body and configured to rotate the base body about an axis when the actuator moves the base body. The fluid inlet is disposed through the base body.

[0010]

[0010] In yet another embodiment, a method for processing a substrate is described. The method includes placing the substrate on the substrate support plate while the substrate support plate is in a first position, moving the electrode toward the substrate support plate to generate a process space between the electrode and the substrate support plate around the substrate, pumping the backside of the substrate to a first backside pressure, rotating the process space to a process position around a rotation axis using an actuator, and pumping the backside of the substrate to a second backside pressure lower than the first backside pressure. After rotating the process space to the process position and pumping the backside of the substrate to the second backside pressure, a process fluid is supplied to the process space from a fluid inlet. An electric field is applied to the substrate using the electrode while in the process position, and the process fluid is exhausted from the process space while in the process position.

[0011]

[0011] In order to allow the above-mentioned features of the present disclosure to be understood in detail, a more detailed description of the present disclosure briefly summarized above can be obtained by referring to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the attached drawings show only exemplary embodiments, and therefore should not be considered as limiting the scope of the present disclosure, and other equally effective embodiments may be acceptable. [Brief description of the drawings]

[0012] [Figure 1]

[0012] A schematic front view of a substrate processing module according to one embodiment described herein is shown. [Diagram 2]

[0013] 2 shows a schematic side view of the substrate processing module of FIG. 1 according to one embodiment described herein. [Figure 3A]

[0014] 2 shows a schematic plan view of the substrate processing module of FIG. 1 according to one embodiment described herein. [Figure 3B]

[0015] 2 shows a schematic plan view of the substrate processing module of FIG. 1 according to another embodiment described herein. [Figure 4]

[0016] 2 shows a schematic cross-sectional view of the substrate processing module of FIG. 1 through a first plane according to an embodiment described herein. [Figure 5A]

[0017] 2 shows a schematic cross-sectional view of the substrate processing module of FIG. 1 through a second plane during a process operation according to an embodiment described herein. [Figure 5B]

[0018] 2 shows a schematic cross-sectional view of the substrate processing module of FIG. 1 through a second plane during another process operation according to an embodiment described herein. [Figure 5C]

[0019] 2 shows a schematic cross-sectional view of the substrate processing module of FIG. 1 through a second plane during yet another process operation according to an embodiment described herein. [Figure 5D]

[0020] 2 shows a schematic cross-sectional view of the substrate processing module of FIG. 1 through a second plane during yet another process operation according to an embodiment described herein. [Figure 5E]

[0021] 2 shows a schematic cross-sectional view of the substrate processing module of FIG. 1 through a second plane during yet another process operation according to an embodiment described herein. [Figure 5F]

[0022] 2 shows a schematic cross-sectional view of the substrate processing module of FIG. 1 through a second plane during yet another process operation according to an embodiment described herein. [Figure 6]

[0023] 2 shows a schematic cross-sectional view of the substrate processing module of FIG. 1 through a third plane according to an embodiment described herein. [Figure 7A]

[0024] 2 shows a schematic cross-sectional view of a substrate support plate for use with the substrate processing module of FIG. 1 according to one embodiment described herein. [Figure 7B]

[0025] 2 is a plan view of a substrate support plate for use with the substrate processing module of FIG. 1 according to one embodiment described herein. [Figure 8]

[0026] 1 is a schematic side view of a stacked assembly of substrate processing modules according to one embodiment described herein. [Figure 9A]

[0027] 4 illustrates method operations for performing an immersion post-exposure bake process according to one embodiment described herein. [Figure 9B]

[0028] 9C illustrates method operations for performing the immersion post-exposure bake process of FIG. 9B according to one embodiment described herein. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013]

[0029] For ease of understanding, the same reference numerals have been used, where possible, to designate identical elements common to the figures. It is believed that elements and features of one embodiment may be beneficially incorporated in other embodiments without additional recitation.

[0014]

[0030] The present disclosure relates generally to methods and apparatus for post-exposure bake processes. The methods and apparatus disclosed herein help reduce line edge roughness / line width roughness and improve exposure resolution in photolithography processes for semiconductor applications.

[0015]

[0031] The method and apparatus disclosed herein improve the photoresist sensitivity and productivity of the photolithography process. During the post-exposure bake procedure, the random diffusion of the charged species generated by the photoacid generator contributes to line edge roughness / line width roughness and contributes to the loss of resist sensitivity. During the photolithography process, an electric field and / or a magnetic field is applied to the photoresist layer using an electrode assembly such as that described herein. The application of the electric field controls the diffusion of the charged species generated by the photoacid generator. Furthermore, an intermediate medium is utilized between the photoresist layer and the electrode assembly to enhance the electric field generated between the two.

[0016]

[0032] The gap defined between the photoresist layer and the electrode assembly results in a reduction in the voltage applied to the electrode assembly, and therefore undesirably reduces the strength of the electric field applied to the photoresist layer. A non-uniform electric field in the photoresist layer can result in insufficient or inaccurate voltage to move or otherwise affect charged species in a particular desired direction within the photoresist, and therefore lead to reduced line edge profile control over the photoresist layer. Therefore, an intermediate medium is placed between the photoresist layer and the electrode assembly to prevent the generation of a gap between them, so as to maintain the appropriate strength and uniformity of the electric field interacting with the photoresist layer.

[0017]

[0033] The charged species generated by the electric field are guided in a desired direction along the line and space directions, substantially preventing line edge roughness / line width roughness resulting from imprecise and random diffusion. Thus, the electric field is well controlled to maintain the field strength and uniformity, improving the accuracy and sensitivity of the photoresist layer during the post-exposure development process. In one embodiment, the intermediate medium is a non-gas phase medium, such as a slurry, gel, solution, or solid medium, which efficiently maintains the applied voltage level within a specific range as it travels from the electrode assembly to the photoresist layer disposed on the substrate.

[0018]

[0034] Even while using an intermediate medium, there is still a voltage drop between the photoresist layer and the electrode assembly. This voltage drop is directly related to the distance between the photoresist layer and the electrode assembly. Reducing the distance between the photoresist layer and the electrode assembly helps to improve the uniformity of the electric field between the photoresist layer and the electrode assembly. Another consideration while using an intermediate medium is the presence of air bubbles between the photoresist layer and the electrode assembly. The creation of air bubbles or air pockets between the photoresist layer and the electrode assembly leads to non-uniformity in the electric field, thus increasing the number of defects and inaccuracies in the photoresist after the post-exposure bake process. The apparatus and method described herein for reducing the distance between the photoresist and the electrode assembly beneficially reduces the number of air bubbles or air pockets between the photoresist layer and the electrode assembly.

[0019]

[0035] Some embodiments further reduce the vertical footprint of the assembly and allow vertical stacking of process modules. The reduction in vertical footprint is made possible, at least in part, by the horizontal movement of the substrate into and out of the process modules. The orientation of the assembly during processing (the angle of the process module relative to the horizontal plane) is also controlled to reduce the effect of air bubbles while reducing the vertical footprint. Processing angles of more than about 5 degrees from the horizontal have been found to substantially reduce the amount of air bubbles between the electrode and the substrate after filling the process space. Angles of about 60 degrees or less than about 50 degrees have been shown to allow vertical stacking of the assembly within the system architecture.

[0020]

[0036] 1 shows a schematic front view of a substrate processing module 100 according to one embodiment described herein. The substrate processing module 100 includes a support plate 106, a base portion 104 disposed on the support plate 106, and a top portion 102 disposed above the base portion 104 and the support plate 106. The base portion 104 and the top portion 102 are configured to move during processing of a substrate within the substrate processing module 100. The base portion 104 is coupled to the support plate 106 by one or more bearing assemblies 108a, 108b. The bearing assemblies 108a, 108b are disposed on sides of the base portion 104 and are configured to enable rotation of the base portion 104 and the top portion 102. In one embodiment, the bearing assemblies 108a, 108b are coupled to the base portion 104 opposite each other.

[0021]

[0037] An actuator 110 is coupled to a surface 159 of the base portion 104 and to the support plate 106. The actuator 110 is configured to apply a force to the base portion 104 to move the base portion 104 and the top portion 102 in a tilting motion about axis A (FIG. 2). A portion of a fluid supply assembly 122 is shown on an opposite side of the base portion 104 from the actuator 110. The fluid supply assembly 122 is configured to supply and remove fluids, such as liquids or process media, to and from the substrate processing module 100.

[0022]

[0038] As shown in FIG. 1 , the base portion 104 includes a base body 128. A plurality of arms 112 connect the base portion 104 and the top portion 102. The plurality of arms 112 are configured to pass through the base body 128 and connect with the top portion 102. The plurality of arms 112 include an arm actuator 142 disposed below the base body 128 and a shaft 140 disposed through a portion of the arm actuator 142 and the base body 128. The shaft 140 is coupled to the top portion 102 and configured to raise and lower the top portion 102 relative to the base body 128. As shown in FIG. 1 , the shaft 140 is coupled to the top portion 102 using a fastener 138. The fastener 138 connects the shaft 140 to a lid 130 of the top portion 102. In other embodiments, the fastener 138 connects the shaft 140 to a spacer plate 132 disposed below the lid 130. The fastener 138 may be a clasp, clamp, buckle, bolt, screw, or other suitable connection device. In some embodiments, the fastener 138 includes multiple components, such as a nut and bolt, or a second shaft that extends from the shaft 140 to the top 102.

[0023]

[0039] The arm actuator 142 is an actuator mechanism configured to raise and lower the shaft 140. The arm actuator 142 described herein is a gas pressure actuator, but may also be a motor, such as an electric motor. The arm actuator 142 is disposed below the base body 128 to prevent blockage of the opening between the top 102 and the base 104. In one embodiment, the arm actuator 142 is disposed between the base body 128 and the support plate 106. The arm actuator coolant connection 114 is coupled to the base body 128 and / or the arm actuator 142. The arm actuator coolant connection 114 is configured to allow a coolant line to be coupled to the base 104. The arm actuator coolant connection 114 is configured to receive fluid from a fluid source and cool the arm actuator 142 by circulating the fluid through conduits disposed around or adjacent to the arm actuator 142.

[0024]

[0040] The base body 128 includes a temperature control plate 131 and a dielectric plate 129. The dielectric plate 129 is disposed on the temperature control plate 131. In one embodiment, the dielectric plate 129 is bonded to and in contact with the temperature control plate 131. The dielectric plate 129 is fabricated from a polymeric material, such as a fluoropolymer or polyaryletherketone (PAEK) polymeric material. In some embodiments, the dielectric plate 129 is a polyetheretherketone (PEEK) or polytetrafluoroethylene polymeric material. In other embodiments, the dielectric plate 129 is fabricated from aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), or yttrium oxide (Y 2 O 3) The temperature control plate 131 is fabricated from a metallic material, including any one or combination of aluminum, stainless steel, nickel, copper, or alloys thereof. In some embodiments, the arm actuator coolant connection 114 is a coolant connection for the base body 128, and cooling channels 411 are formed through the base body 128 to allow for temperature control of the temperature control plate 131 (FIG. 4).

[0025]

[0041] The top 102 includes an electrode 400 (FIG. 4), a lid 130, and a spacer plate 132. The lid 130 is disposed above the spacer plate 132. In one embodiment, the lid 130 is disposed in bonded contact with the spacer plate 132. The spacer plate 132 is disposed between the lid 130 and the base body 128. The lid 130 is configured to support the electrode 400 and the spacer plate 132. The lid 130 is fabricated from a metallic material. The metallic material includes any one or combination of aluminum, stainless steel, nickel, copper, or alloys thereof. The spacer plate 132 is disposed below or otherwise bonded to the lid 130. The spacer plate 132 is a dielectric or ceramic material. The spacer plate 132 functions to separate the lid 130 and the electrode 400 from the top surface 154 of the base body 128. In some embodiments, the spacer plate 132 is fabricated from a polymeric material, such as a fluoropolymer or polyaryletherketone (PAEK). In some embodiments, the spacer plate 132 is a polyetheretherketone (PEEK) plastic or polytetrafluoroethylene material. In other embodiments, the spacer plate 132 is fabricated from aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), or yttrium oxide (Y 2 O 3 ) are manufactured from ceramic materials.

[0026]

[0042] An electrode cooling fluid connection 134 is disposed on the lid 130. The electrode cooling fluid connection 134 allows a coolant line, such as a water supply and removal line, to be connected to the top 102. The electrode cooling fluid connection 134 includes an inlet and an outlet. The electrode cooling fluid connection 134 connects to a conduit in the electrode 400 (FIG. 4). The conduit is disposed through the electrode 400 to allow for temperature regulation of the electrode 400. A lid cooling fluid connection 133 is further disposed on the lid 130. The lid cooling fluid connection 133 is configured to allow a second coolant line, such as a water supply and removal line, to be connected to the top 102. The lid cooling fluid connection 133 includes an inlet and an outlet. The lid cooling fluid connection 133 is fluidly connected to a conduit in the lid 130 (FIG. 4).

[0027]

[0043] An electrode connection 136 is disposed on the lid 130 and extends through the lid 130 and a portion of the spacer plate 132 to electrically couple the electrode connection 136 to the electrode 400 (FIG. 4). The electrode connection 136 is configured to be coupled to a power source, such as a voltage generator or a current generator. The electrode connection 136 is configured to be coupled to either a DC or AC power source. The electrode connection 136 may be either a male or female electrical connection.

[0028]

[0044] The base underplate 124 is disposed below the base body 128. The base underplate 124 is also disposed below the chuck separation plate 126. The base underplate 124 is a metallic material. Whereby, the base underplate 124 includes any one or combination of aluminum, stainless steel, nickel, copper, or alloys thereof. The chuck separation plate 126 is a dielectric or ceramic material. In one embodiment, the chuck separation plate 126 is a material similar to the spacer plate 132, such as a polymer, e.g., a fluoropolymer or a polyaryletherketone (PAEK) material. In some embodiments, the chuck separation plate 126 is polyetheretherketone (PEEK) or polytetrafluoroethylene. In other embodiments, the chuck separation plate 126 is a material similar to the spacer plate 132, such as a polymer, e.g., a fluoropolymer or a polyaryletherketone (PAEK) material. In some embodiments, the chuck separation plate 126 is a polyetheretherketone (PEEK) or polytetrafluoroethylene. In other embodiments, the chuck separation plate 126 is a material similar to the spacer plate 132, such as a fluoropolymer or a polyaryletherketone (PAEK) material. 2 O 3 ), aluminum nitride (AlN), yttrium oxide (Y 2 O 3 ), or a combination thereof. The chuck separation plate 126 electrically and thermally insulates the substrate support plate 408 (FIG. 4) in the base body 128 from the base lower plate 124. The chuck separation plate 126 is disposed between the substrate support plate 408 and the base lower plate 124. The base lower plate 124 provides structural support to the chuck separation plate 126 and the substrate support plate 408. The base lower plate 124 and the chuck separation plate 126 are mechanically coupled to the bottom of the base body 128. The base lower plate 124 may further include one or more bellows 116 attached to its bottom surface. The bellows 116 are configured to surround a plurality of lift pins 416 (FIG. 4). The plurality of lift pins 416 are disposed through the base lower plate 124, the chuck separation plate 126, and the substrate support plate 408.

[0029]

[0045] The plurality of lift pins 416 are disposed above the lift pin plate 118. Each of the bellows 116 is disposed between the lift pin plate 118 and the base lower plate 124. The bellows 116 surrounds each of the plurality of lift pins 416 and forms a seal. The bellows 116 is a flexible material and may expand and contract when the lift pin plate 118 is raised and lowered relative to the base body 128. The lift pin plate 118 is mechanically coupled to the top 102 by a plurality of connecting rods 120. The connecting rods 120 extend from the lift pin plate 118 through the base body 128 to the top 102. The connecting rods 120 are mechanically connected to each of the lift pin plate 118 and at least one of the lid 130 or the spacer plate 132 of the top 102. In the embodiments described herein, the connecting rods 120 are disposed radially inward of the shaft 140 of the arm 112.

[0030]

[0046] The bearing assemblies 108a, 108b are configured to enable rotation of the base portion 104 and the top portion 102 about an axis A (FIG. 2). The bearing assemblies 108a, 108b include a first bearing assembly 108a and a second bearing assembly 108b. Each of the bearing assemblies 108a, 108b includes a housing 146 and a shaft 148. The shaft 148 is disposed through the housing 146 and is configured to rotate within the housing 146. The shaft 148 may be a cylindrical shaft or other suitable shape and is coupled to the housing 146 via a number of ball bearings and a sealing ring (not shown). Each of the first bearing assembly 108a and the second bearing assembly 108b is a pillow block bearing. Other types of bearing assemblies may be utilized in addition to or in place of pillow block bearings.

[0031]

[0047] A housing 146 of each of the bearing assemblies 108a, 108b is disposed on a bearing pedestal 144. Each of the two bearing pedestals 144 is disposed below the housing 146 to raise the bearing assemblies 108a, 108b to a height that allows sufficient rotation of the substrate processing module 100 without contacting the support plate 106. The housing 146 of each of the first bearing assembly 108a and the second bearing assembly 108b is mechanically coupled to one of the bearing pedestals 144. The bearing pedestal 144 is mechanically coupled to the support plate 106 and disposed on the support plate 106.

[0032]

[0048] The shaft 148 of the first bearing assembly 108a and the shaft 148 of the second bearing assembly 108b are coupled to a base housing 150. The base housing 150 is coupled to a lower surface 152 of the base body 128. The base housing 150 is configured to couple the shaft 148 and the base body 128. The base housing 150 is fixedly coupled to the shaft 148, so that the shaft 148 does not move within the base housing 150. Since the shaft 148 is fixed to the base housing 150, the base body 128 can rotate together with the shaft 148. Each of the first bearing assembly 108a and the second bearing assembly 108b is disposed on either side of the base body 128 such that the central axes of each of the shafts 148 are collinear. Due to the single axis of rotation, the base body 128 can be actuated to tilt around a pivot axis.

[0033]

[0049] The actuator 110 is coupled to the upper surface 107 of the support plate 106 and to a surface 159 of the base body 128. The actuator 110 is coupled to the support plate 106 and is disposed on a lower hinge 156 disposed on the support plate 106. A piston 158 is coupled at one end 157 to the lower hinge 156. An actuator shaft 162 is at least partially disposed within the piston 158. An upper hinge 160 is coupled to a distal end 161 of the actuator shaft 162 and to a surface 159 of the base body 128. The lower hinge 156 is coupled to the support plate 106 and to the piston 158. The lower hinge 156 allows the piston 158 to move about a lower hinge axis. The piston 158 is a cylindrical shaped shaft and includes an opening 524 (FIG. 5A) through which the actuator shaft 162 is disposed. The actuator shaft 162 is configured to move within the piston 158 to actuate the base body 128. An upper distal end 161 of the actuator shaft 162 is coupled to an upper hinge 128. The upper hinge 128 connects the actuator shaft 162 and the base body 128. The upper hinge 128 allows the actuator shaft 162 and the base body 128 to move relative to one another about an upper hinge axis.

[0034]

[0050] A fluid supply assembly 122 is disposed on an opposite side of the base body 128 from the actuator 110. The fluid supply assembly 122 includes a fluid supply connection 170 and a fluid exhaust connection 172. The fluid supply connection 170 is configured to be attached to a process fluid conduit (not shown) to introduce process fluid to the substrate processing module 100. The fluid exhaust connection 172 is configured to be attached to a process fluid exhaust conduit (not shown). The process fluid exhaust conduit allows fluid to be removed from the substrate processing module 100.

[0035]

[0051] One or more guide posts 212 are disposed between the underside 152 of the base body 128 and the support plate 106. The one or more guide posts 212 allow actuation of the base body 128 to a preset position and help guide the movement of the base body 128. In one embodiment, the one or more guide posts 212 are disposed on a side of the base body 128 closest to the actuator 110. In some embodiments, the guide posts 212 are disposed on a side of the actuator 110 and on an opposite side of the base body 128 closest to the fluid supply assembly 122.

[0036]

[0052] 2 shows a schematic side view of the substrate processing module 100. As described above, the shaft 148 of the second bearing assembly 108b defines an axis A extending collinearly along the shaft 148. The axis A serves as the axis of rotation for the processing module 100. The fluid supply assembly 122 also includes a fluid assembly body 206. A first valve actuator 210 and a second valve actuator 208 are coupled to and in communication with the fluid assembly body 206. The first valve actuator 210 and the second valve actuator 208 are configured to open and close valves in the fluid assembly body 206. The first valve actuator 210 and the second valve actuator 208 are gas pressure actuators, but may also be motors, such as stepper motors, servo motors, linear motors, or direct drive motors.

[0037]

[0053] A vent connector 204 is disposed on the top 102, such as on the lid 130. The vent connector 204 is coupled to a fluid supply line (not shown). The vent connector 204 helps provide vent to the process space 404 (FIG. 4). The vent connector 204 may also be used to apply reduced pressure to the process space 404 or to pressurize the process space 404.

[0038]

[0054] 3A shows a schematic plan view of the substrate processing module 100 of FIG. 1 according to a first embodiment. The processing module 100 of FIG. 3A includes four arms 112 having four shafts 140 and four connecting rods 120. Each of the four arms 112 and connecting rods 120 is located at a corner of the top 102 and the lid 130. Similarly, each of the arm actuator coolant connections 114 is located near a respective corner of the base body 128. In one embodiment, the vent connection 204 is located in the middle of the lid 130 closest to the actuator 110. In another embodiment, the vent connection 204 is located in the middle of the lid 130 opposite the actuator 110. Each of the electrode cooling fluid connections 134 and the electrode connections 136 is located in a recess 302 in the lid 130. The recess 302 is a circular recess in the top surface of the lid 130. Thereby, the thickness of the lid 130 is reduced in the recess 302 .

[0039]

[0055] As shown, the first bearing assembly 108a and the second bearing assembly 108b are each mirror-disposed on either side of the base portion 104, opposite each other.

[0040]

[0056] In the first embodiment of FIG. 3A, the lid 130 has a smaller top area than the top surface 154 of the base body 128. In one embodiment of FIG. 3A, the shafts 140 of the arms 112 do not pass through the lid 130, but instead are disposed outside the edge 304 of the lid 130. The connecting rods 120 are disposed through the lid 130. Fasteners 138 couple the connecting rods 120 and each of the shafts 140 together. The fasteners 138 also couple each of the shafts 140 to the lid 130 such that the shafts 140 can be used to raise and lower the lid 130. The use of the shafts 140 and connecting rods 120 at each of the corners of the lid 130 allows for uniform raising and lowering of both the lid 130 and the lift pin plate 118. Other arrangements of the shafts 140 and connecting rods 120 are also contemplated and may include the use of more than one shaft 140 and connecting rod 120, such as three shafts 140 and three connecting rods 120.

[0041]

[0057] FIG. 3B shows a schematic plan view of the substrate processing module of FIG. 1 according to a second embodiment. The second embodiment is similar to the first embodiment of FIG. 3A, but the shafts 140 of the arms 112 are disposed through the lid 130. The shafts 140 are coupled to the lid 130 at the top surface 306 of the lid 130 by fastening caps 139. The fastening caps 139 secure each of the shafts 140 to the lid 130. The connecting rods 120 are not shown in the embodiment of FIG. 3B, but are disposed radially inward of the shafts 140. The connecting rods 120 do not extend completely to the top surface of the lid 130, but are disposed through at least a portion of the upper portion 102. In FIG. 3B, the top surface area of ​​the lid 130 is larger than the top surface area of ​​the lid 130 in the embodiment of FIG. 3A.

[0042]

[0058] 4 shows a schematic cross-sectional view of the substrate processing module of FIG. 1 through a first plane according to one embodiment described herein. The view of FIG. 4 further shows a process space 404, a substrate support surface 406, an electrode 400, a lower electrode surface 402, a sealing groove 412 disposed around the process space 404, and a sealing ring 410 disposed within the sealing groove 412. The process space 404 is a space for processing a substrate and is disposed between the top portion 102 and the base portion 104. The process space 404 is at least partially formed by the substrate support surface 406 that is vertically offset from the top surface 154 of the base body 128.

[0043]

[0059] The substrate support plate 408 is disposed within the base body 128 and forms a portion of the process space 404. The substrate support plate 408 is disposed above the dechuck plate 126 and the under-base plate 124. The substrate support plate 408 is configured to be a heated plate and may be grounded by one or more electrical connections 432. The substrate support plate 408 is heated using one or more heating elements 430 disposed therein. In some embodiments, the heating elements 430 are resistive heaters. The heating elements 430 may alternatively be heating pipes or lamps disposed within the substrate support plate 408. The substrate support plate 408 is a conductive material, such as a metal or a metal-containing material. In some embodiments, the substrate support plate 408 is an aluminum material, a stainless steel material, or an alloy thereof. In yet other embodiments, the substrate support plate 408 is formed of a quartz material or a silicon carbide material. The substrate support plate 408 forms the substrate support surface 406. Substrate support surface 406 is disposed above substrate support plate 408 and is a surface configured to receive a semiconductor substrate, such as substrate 500 in FIG. 5A.

[0044]

[0060] Lift pins 416 are disposed through the substrate support plate 408. The lift pins 416 are disposed within apertures 414 in the substrate support plate 408. As shown in Figure 5A, each of the lift pins 416 is disposed within a separate aperture 414 to allow the lift pins 416 to be raised and lowered through the substrate support plate 408. In some embodiments, the apertures 414 are also utilized to apply reduced pressure to the backside of the substrate or to apply pressure to the backside of the substrate.

[0045]

[0061] A sealing groove 412 is formed in the upper surface 154 of the base body 128. In some embodiments, the sealing groove 412 may alternatively be formed in the lower surface 413 of the spacer plate 132. The sealing groove 412 includes a sealing ring 410 disposed therein. The sealing ring 410 is a polymer, such as a fluoropolymer or polyaryletherketone (PAEK) material. In some embodiments, the sealing ring 410 is a polyetheretherketone (PEEK) or polytetrafluoroethylene material. In some embodiments, the sealing ring 410 is an O-ring, gasket, or other type of seal. The sealing ring 410 forms a seal between the lower surface 413 of the spacer plate 132 and the upper surface 154 of the base body 128 to prevent fluid from leaking from the process space 404 during processing of a substrate.

[0046]

[0062] In one embodiment, the electrode 400 is a disk disposed above the substrate support surface 406. The electrode 400 has an electrical resistivity of approximately 1×10 -3 Less than Ω·m, e.g. 1×10 -4 Less than Ω·m, e.g. 1×10 -5 The electrode 400 is fabricated from an electrically conductive material having a resistance of less than Ω·m. In some embodiments, the electrode 400 is a metallic material, a metal alloy material, or a silicon carbide material. When the electrode 400 is a metallic material, the electrode 400 is formed of copper, aluminum, platinum, steel, or combinations thereof. The electrode 400 is electrically coupled to the electrode connection 136 to allow a voltage or current to be applied to the electrode 400 via a power source (not shown).

[0047]

[0063] Figures 5A-5F show schematic cross-sectional views of the substrate processing module 100 of Figure 1 through the second plane during different process operations. Figures 5A-5F show one embodiment of a process operation of the method 900 of Figures 9A and 9B.

[0048]

[0064] 5A-5F, the processing module 100 further includes a fluid inlet passage 508, an air passage 502, and a vacuum passage 506. Each of the fluid inlet passage 508, the air passage 502, and the vacuum passage 506 are in fluid communication with the process volume 404. The fluid inlet passage 508 is disposed through the base body 128 and fluidly connects the process volume 404 to the fluid supply assembly 122.

[0049]

[0065] The fluid supply assembly 122 includes a central passage 510 connected to a first branch 516 and a second branch 518. Each of the first branch 516 and the second branch 518 is disposed off of the central passage 510. The first branch 516 includes a process fluid opening 520 disposed through a sidewall of the first branch 516 and a first valve 512. The first valve 512 is coupled to a first valve actuator 210. The first valve actuator 210 is configured to move the first valve 512 to open and close the process fluid opening 520. The process fluid opening 520 is in an open position when in fluid communication with the central passage 510 and in a closed position when the first valve 512 is actuated to a position where the process fluid opening 520 is not in fluid communication with the central passage 510.

[0050]

[0066] The second branch 518 includes a discharge opening 522 disposed through a sidewall of the second branch 518 and a second valve 514. The second valve 514 is coupled to the second valve actuator 208. The second valve actuator 208 is configured to move the second valve 514 to open and close the discharge opening 522. The discharge fluid opening 522 is in an open position when in fluid communication with the central passage 510 and in a closed position when the second valve 514 is actuated to a position where the discharge opening 522 is not in fluid communication with the central passage 510. As shown herein, each of the first valve 512 and the second valve 514 is a piston. The first valve 512 is closed when a piston head of the first valve 512 separates the process fluid opening 520 from the central passage 510. The second valve 514 is closed when the piston head of the second valve 514 separates the exhaust opening 522 from the central passage 510. When in communication with the central passage 510, either the process fluid opening 520 or the exhaust opening 522 is in fluid communication with the process space 404.

[0051]

[0067] Fluid supply connection 170 corresponds to process fluid opening 520 and, when coupled to a process fluid source (not shown), supplies process fluid to process fluid opening 520. Fluid exhaust connection 172 corresponds to exhaust opening 522 and, when coupled to a process fluid removal device, such as a fluid pump (not shown), removes process fluid via exhaust opening 522.

[0052]

[0068] Opposite the opening of the process space 404 to the fluid inlet passage 508 is an opening to an air passage 502 and a vacuum passage 506. The air passage 502 extends through the top 102 such that the air passage 502 is a passage formed through the lid 130 and the spacer plate 132. The air passage 502 is disposed radially outward of the electrode 400. The air passage 502 connects the process space 404 to the vent connector 204. In one embodiment, the air passage 502 is used to exhaust excess fluid or gas from the process space 404. Alternatively, the air passage 502 is used to generate a vacuum in the process space 404 when the air passage 502 is in fluid communication with an exhaust pump (not shown).

[0053]

[0069] The vacuum passage 506 extends through the base 104. The vacuum passage 506 thereby extends through the base body 128. The vacuum passage 506 fluidly connects the process space with a vacuum connection 504 disposed on the lower surface 152 of the base body 128. The vacuum connection 504 is a coupling component configured to be attached to a fluid or gas line. In some embodiments, the vacuum connection 504 is coupled to a vacuum pump for removing gas from the process space 404. In yet other embodiments, the vacuum connection 504 is configured to be coupled to a fluid pump to recirculate or remove fluid from the process space 404 during substrate processing.

[0054]

[0070] The actuator 110 is shown herein as a gas pressure actuator. The actuator 110 includes an opening 524 in the piston 158. The opening 524 includes an actuator shaft 162 disposed therein. The opening 524 is a cylindrical opening, and an inner surface 525 of the opening 524 is sized similarly to a head 531 of the actuator shaft 162. A pressure differential is thereby achieved between different portions of the opening 524.

[0055]

[0071] 5A, the processing module 100 is oriented in a horizontal loading position. The horizontal loading position includes the top 102 and the lift pins 416 in a raised position. The substrate 500 is placed on the lift pins 416 in the raised position. The upper distal ends of the lift pins 416 are vertically offset from the substrate support surface 406, such that the upper distal ends of the lift pins 416 are above the substrate support surface 406. The processing module 100 is disposed in the horizontal loading position during insertion and removal of the substrate 500 from the processing module 100.

[0056]

[0072] 5B shows the processing module 100 while the top 102 is in an intermediate position. The intermediate position is a position between the loading position and the lowered position. The intermediate position is a position in which the substrate 500 is disposed on the substrate support surface 406 and the top 102 does not form a seal with the base 104 to seal the process space 404, e.g., the top 102 is spaced apart from the base 104. Between the horizontal loading position and the intermediate position, the electrode 400 and the substrate 500 descend at the same speed. After the top 102 reaches the intermediate position, the substrate 500 remains stationary while the electrode 400 and other components of the top 102 continue to descend to the lowered position as shown in FIG. 5C.

[0057]

[0073] While in the lowered position of FIG. 5C, the lower surface 413 of the top portion 102, such as the lower surface 413 of the spacer plate 132, and the upper surface 154 of the base body 128 contact and form a seal therebetween using a sealing ring 410. The process space 404 is sealed from the outside environment by the electrode 400, the substrate support plate 408, the base body 128, and the spacer plate 132. When the processing module 100 is in the lowered position, the process space 404 is evacuated (drained) or filled with a fluid. The space between the substrate 500 and the substrate support plate 408 may also be evacuated as described in the method 900 of FIGS. 9A and 9B.

[0058]

[0074] While in the lowered position, the lift pins 416 are spaced from the underside of the substrate 500. After the substrate 500 is placed on the substrate support surface 406 and the top portion 102 is lowered, the lift pins 416 continue to lower due to the connections of the connecting rods 120 to both the lift pin plate 118 and the top portion 102. The bellows 116 stretch as the lift pins 416 lower.

[0059]

[0075] Once the processing volume 404 is sealed, the processing module 100 is actuated to a first angular position, as shown in FIG. 5D. The first angular position is a position in which the top portion 102 and base portion 104 of the processing module 100 are angled relative to a horizontal plane and / or support plate 106. The top portion 102 and base portion 104 are angled by moving the actuator shaft 162 within the piston 158. The base portion 104 and top portion 102 are thereby rotated about axis A utilizing the bearing assemblies 108a, 108b.

[0060]

[0076] FIG. 5E shows the processing module 100 while it is in a first angular position and filled with a process fluid, such as an intermediate medium or a dielectric liquid. The process fluid is introduced through the process fluid opening 520, which is shown as open in FIG. 5E. Excess process fluid 520 and any residual gas may be exhausted through the ventilation passage 502. The vacuum passage 506 is sealed from the process fluid to prevent the process fluid from entering a vacuum pump connected to the vacuum passage 506. While in the processing position, the distance H between the upper surface of the substrate and the lower surface of the electrode is about 0.1 mm to about 10 mm, such as about 0.5 mm to about 7 mm, such as about 1 mm to about 5 mm, such as about 1 mm to about 3 mm. The distance H between the upper surface of the substrate and the lower surface of the electrode allows for a reduction in the voltage drop across the gap between the substrate 500 and the electrode 400. Reducing the voltage drop across the gap allows for the use of lower voltages during the post-exposure bake operation.

[0061]

[0077] Figure 5F illustrates the process module 100 while the process module 100 is in a first angular position and process fluid is being exhausted through the exhaust opening 522. As shown in Figure 5F, the exhaust opening 522 is in fluid communication with the process space 404 while the second valve 514 is in an open position.

[0062]

[0078] 6 shows a schematic cross-sectional view of the substrate processing module 100 of FIG. 1 through a third plane according to one embodiment described herein. The third plane is a diagonal of the processing module 100. FIG. 6 shows the connecting rod aperture 602 and the shaft aperture 604 for the arm 112.

[0063]

[0079] The connecting rod apertures 602 allow the connecting rod 120 to move freely within the base body 128. The connecting rod apertures 602 extend between the upper surface 154 of the base body 128 and the lower surface 152 of the base body 128. One connecting rod 120 is disposed within each of the connecting rod apertures 602. Each of the connecting rod apertures 602 further includes a bearing assembly (not shown). The bearing assembly helps guide the connecting rod 120 through the connecting rod apertures 602. The bearing assembly may be a linear bearing, a ball spline bearing, or other suitable bearing assembly.

[0064]

[0080] The shaft apertures 604 allow the shaft 140 of the arm 112 to move freely within the base body 128. The shaft apertures 604 extend between the upper surface 154 of the base body 128 and the lower surface 152 of the base body 128. One shaft 140 is disposed within each of the shaft apertures 604. The shaft apertures may also include a bearing assembly (not shown) disposed therein. The bearing assembly helps to guide the shaft 140 through the shaft apertures 604. The bearing assemblies may be linear bearings, ball spline bearings, or other suitable bearing assemblies.

[0065]

[0081] Each of the arm actuators 142 is further shown to include an arm actuator opening 606 and a shaft head 608 coupled to each of the shafts 140. The actuator opening 606 is an opening disposed within each of the arm actuators 142. The shaft head 608 and a portion of one of the shafts 140 are disposed within each of the actuator openings 606. As shown in FIG. 6, the arc actuators 142 are gas pressure actuators.

[0066]

[0082] 7A shows a schematic cross-sectional view of a substrate support plate 408 used with the substrate processing module 100 of FIG. 1 according to one embodiment described herein. The substrate support plate 408 may alternatively be referred to as a substrate chuck or a heated chuck. The substrate support plate 408 includes a chuck body 700. The chuck body 700 includes a substrate support surface 406 disposed therein. The substrate support surface 406 is disposed as an upper surface of the chuck body 700. The substrate support surface 406 includes two or more sealing rings 730, 732, 734 disposed on the substrate support surface 406 and a plurality of backside gas channels 718, 720, 722, 724, 728. The plurality of backside gas channels 718, 720, 722, 724, and 728 are fluidly connected to one or more backside gas conduits 706, 708.

[0067]

[0083] Each of the sealing rings 730, 732, 734 is a circular seal disposed on or partially embedded within the substrate support surface 406. The sealing rings 730, 732, 734 may also be other shapes, such as oval, elliptical, or rectilinear. Other sealing ring shapes are also envisioned. The sealing rings 730, 732, 734 are illustrated as a first sealing ring 730, a second sealing ring 732, and a third sealing ring 734. The sealing rings 730, 732, 734 may also be described as an inner sealing ring, a middle sealing ring, and an outer sealing ring, respectively. In this example, the diameter of the second sealing ring 732 is larger than the diameter of the first sealing ring 730, and the diameter of the third sealing ring 734 is larger than the diameter of the second sealing ring 732. Each of the sealing rings 730, 732, 734 is fabricated from a polymeric material, such as polyetheretherketone (PEEK) plastic or polytetrafluoroethylene. The sealing rings have a hardness of about 30 durometer to about 120 durometer on the Shore A hardness scale, such as about 45 durometer to about 100 durometer on the Shore A scale, such as about 50 durometer to about 90 durometer on the Shore A scale. Each of the sealing rings 730, 732, 734 may have a cross-sectional shape modified to enhance bending of the sealing rings 730, 732, 734 under a given pressure condition. In some embodiments, any or all of the sealing rings 730, 732, 734 have a C-shaped cross-section or a hollow ring cross-section. Each of the sealing rings 730, 732, 734 is configured to form a seal between the substrate 500 and the substrate support surface 406.

[0068]

[0084] The sealing rings 730, 732, 734 are configured to deform to allow the bottom surface of the substrate 500 to contact the substrate support surface 406 when the pressure difference between the upper process space 404 and the space along the backside 501 of the substrate 500 increases to a predetermined level. In some embodiments described herein, the sealing rings 730, 732, 734 are configured to deform to allow the substrate 500 to contact the substrate support surface 406 when the pressure difference between the process space 404 and the space along the backside 501 of the substrate 500 is above about 75 Torr, such as above about 90 Torr, such as above about 100 Torr. Keeping the substrate 500 out of contact with the substrate support surface is beneficial during certain process operations to reduce the rate of temperature increase in the substrate 500. Delaying contact of the substrate 500 with the substrate support surface 406 delays significant heating of the substrate 500 until the chamber begins to fill or is already filled with process fluid and the electric field is activated. The pressure differential between the process space 404 and the space along the backside 501 of the substrate 500 is increased when a rapid temperature increase within the substrate 500 is beneficial.

[0069]

[0085] The first sealing ring 730, the second sealing ring 732, and the third sealing ring 734 are disposed about a central support axis B. The central support axis B is the central axis of the substrate support surface 406. The first sealing ring 730 has a radius of about 0.6 inches to about 2.75 inches, e.g., about 1 mm to about 2 mm. The second sealing ring 732 has a radius of about 2.75 inches to about 4.5 inches, e.g., about 3.5 mm to about 4.5 mm. The third sealing ring 734 has a radius of about 4 inches to about 5.5 inches, e.g., about 4.5 mm to about 5 mm. The central support axis B passes through the central backside gas channel 718. The first backside gas channel 720, the second backside gas channel 722, and the third backside gas channel 724 are disposed about the central support axis B. The first backside gas channel 720 has a radius of about 0 mm to about 1.6 mm, e.g., about 1 mm to about 2 mm. The second backside gas channel 722 has a radius of about 1.75 mm to about 3.75 mm, e.g., about 2.25 mm to about 3.25 mm. The third backside gas channel 724 has a radius of about 4 mm to about 5 mm, e.g., about 4.2 mm to about 4.5 mm. The outer backside gas channel 728 has a radius of about 5 mm to about 6 mm, e.g., about 5.3 mm to about 5.5 mm. The location of each of the sealing rings 730, 732, 734 and each of the backside gas channels 718, 720, 722, 724 are positioned to control the temperature at the edge of the substrate 500 and prevent the edge of the substrate from lifting due to flexure.

[0070]

[0086] The pressure differential between the process space 404 and a space 750 along the backside 501 of the substrate 500 is controlled using backside gas channels 718, 720, 722, 724, 728 and one or more backside gas conduits 706, 708. A central backside gas channel 718, a first backside gas channel 720, a second backside gas channel 722, a third backside gas channel 724, and an outer backside gas channel 728 are formed in the chuck body 700. Each of the central backside gas channel 718, the first backside gas channel 720, the second backside gas channel 722, and the third backside gas channel 724 are all interior backside gas channels and are configured to be in fluid communication with an interior backside portion of the substrate 500. The outer backside gas channel 728 is disposed radially outward of each of the first backside gas channel 720, the second backside gas channel 722, and the third backside gas channel 724. The outer backside gas channel 728 is disposed between the third sealing ring 734 and the edge support ring 736.

[0071]

[0087] The central backside gas channel 718, the first backside gas channel 720, the second backside gas channel 722, and the third backside gas channel 724 are connected to a first backside gas conduit 708. The first backside gas conduit 708 is fluidly connected to the central backside gas channel 718 via one or more central gas apertures 710. The first backside gas conduit 708 is fluidly connected to the first backside gas channel 720 via one or more first gas apertures 712. The first backside gas conduit 708 is fluidly connected to the second backside gas channel 722 via one or more second gas apertures 714. The first backside gas conduit 708 is fluidly connected to the third backside gas channel 724 via one or more third gas apertures 716. The central gas aperture 710 extends between and connects the central backside gas channel 718 and the first backside gas conduit 708. The first gas aperture 712 extends between and connects the first backside gas channel 720 and the first backside gas conduit 708. The second gas aperture 714 extends between and connects the second backside gas channel 722 and the first backside gas conduit 708. The third gas aperture 716 extends between and connects the third backside gas channel 724 and the first backside gas conduit 708. The first backside gas conduit 708 is fluidly coupled to a backside gas supply connection 702. The backside gas supply connection 702 is disposed on a lower surface of the chuck body 700 and is configured to be attached to a first backside gas supply (not shown). The backside gas supply connection 702 may also be connected to a first backside pump (not shown) to create a reduced pressure between the backside of the substrate 500 and the substrate support surface 406 .

[0072]

[0088] A central backside gas channel 718 extends across the diameter of the first backside gas channel 720 and connects both ends of the first backside gas channel 720. One or more radial gas channels 721 connect the first backside gas channel 720 and the second backside gas channel 722. The one or more radial gas channels 721 extend below the first sealing ring 730 and have a greater depth below the first sealing ring 730 to allow fluid communication from the first backside gas channel 720 and the second backside gas channel 722. A similar set of one or more radial gas channels 723 connect the second backside gas channel 722 and the third backside gas channel 724 and have a greater depth below the second sealing ring 732 as the first radial gas channels 721 (FIG. 7B).

[0073]

[0089] A first sealing ring 730 is disposed between the first backside gas channel 720 and the second backside gas channel 722. A second sealing ring 732 is disposed between the second backside gas channel 722 and the third backside gas channel 724. A third sealing ring 734 is disposed between the third backside gas channel 724 and the outer backside gas channel 728.

[0074]

[0090] The outer backside gas channel 728 is connected to a second backside gas conduit 706 disposed through the chuck body 700. The second backside gas conduit 706 is coupled to the outer backside gas channel 728 using one or more outer gas apertures 726. The outer gas apertures 726 provide fluid communication between the second backside gas conduit 706 and the outer backside gas channel 728. The first backside gas channel 720, the second backside gas channel 722, the third backside gas channel 724, and the outer backside gas channel 728 are ring-shaped and form a groove around the substrate support surface 406.

[0075]

[0091] The second backside gas conduit 706 is fluidly coupled to a second backside gas supply connection 704. The second backside gas supply connection 704 is disposed on a lower surface of the chuck body 700 and is configured to be attached to a second backside gas supply source (not shown). The second backside gas supply connection 704 may also be connected to a second backside pump (not shown) to generate a reduced pressure between the backside of the outer edge of the substrate 500 and the substrate support surface 406.

[0076]

[0092] An edge support ring 736 is disposed radially outward of the outer backside gas channel 728. In one embodiment, the edge support ring 736 is of a similar material as the two or more sealing rings 730, 732, 734. In some embodiments, the edge support ring 736 is of the same material as the chuck body 700. The edge support ring 736 is disposed to support the outermost edge of the substrate 500. The edge support ring 736 helps form a seal between the outer edge of the substrate 500 and the substrate support surface 406.

[0077]

[0093] The chuck body 700 includes a raised edge 738 disposed about the substrate support surface 406. The raised edge 738 forms a recess in which the substrate support surface 406 is disposed. The edge support ring 736 has an outer diameter that is smaller than an inner diameter of the raised edge 738. The edge support ring 736 is thereby disposed on the support surface 406 radially inward of the raised edge 738.

[0078]

[0094] FIG 7B is a plan view of the substrate support plate 408 used with the substrate processing module 100 of FIG 1 according to one embodiment described herein. The substrate 500 is not shown in FIG 7B. FIG 7B further illustrates the distribution of gas apertures 710, 712, 714, 716, and 726 relative to the backside gas channels 718, 720, 722, 724, 728. The gas apertures 710, 712, 714, 716, and 726 are distributed around the circumference of each of the backside gas channels 718, 720, 722, 724, 728. A first seal ring 730 is disposed over a portion of the one or more radial gas channels 721 and a second seal ring 732 is disposed over another set of portions of the one or more radial gas channels 723.

[0079]

[0095] 8 is a schematic side view of a stacked assembly 800 of substrate processing modules 100 according to one embodiment described herein. The stacked assembly 800 includes a plurality of processing modules 100 arranged vertically stacked on top of one another. As shown herein, the support plate 106 of each of the processing modules 100 is attached to a support rail 802. The support rail 802 is a vertically oriented pole or support structure. The substrate plate 106 can be slidably connected to each of the support rails 802 to secure the processing module 100 in place. As shown herein, there are five processing modules 100 stacked on top of one another. The gap between the top of each of the processing modules 100 and the bottom of the support plate 106 above that processing module 100 is less than about 18 inches, such as less than about 15 inches, such as from about 9 inches to about 15 inches, such as from about 11 inches to about 13 inches. Stacking the processing modules 100 allows for increased throughput by processing substrates, such as substrate 500, in each of the processing modules 100 while reducing the horizontal footprint of the processing system track. The gaps between each of the processing modules 100 allow for rotation of the processing modules 100, as described in method 900 of Figures 9A-9B, without one of the processing modules 100 contacting the support plate 106 of an adjacent processing module 100.

[0080]

[0096] 9A-9B illustrate operations of a method 900 for performing an immersion electric field induced post-exposure bake process according to one embodiment described herein. The method 900 is performed using, among other things, the apparatus of FIGS. 1-8. The method 900 includes an operation 902 of loading a substrate, such as the substrate 500, into a process module, such as the process module 100. Loading the substrate into the process module is performed while the process module 100 is in a horizontal loading position as shown in FIG. 5A. The substrate is placed on lift pins, such as the lift pins 416, by a robot or positioning assembly (not shown). After the substrate is placed on the lift pins, the substrate is lowered during operation 904 onto a plurality of support elements on a substrate support plate, such as the substrate support plate 408. The plurality of support elements include seal rings 730, 732, 734 and an edge support ring 736. The substrate is lowered onto the lift pins toward the substrate support surface 406, as shown in FIG. 5B. The top portion 102 and base portion 104 are disposed in a horizontal position during loading of a substrate into the processing module 100. The horizontal position of the top portion 102 and base portion 104 allows the substrate to be loaded into the base portion 104 while in a horizontal orientation.

[0081]

[0097] After loading the substrate during operations 902 and 904, the electrode and upper assembly, such as top portion 102, is lowered towards a base assembly, such as base portion 104. Lowering the electrode and upper assembly creates a process space, such as process space 404. After operation 904, the top portion is moved to a lowered position during operation 906, as shown in FIG. 5C. Closing the upper assembly and the base assembly creates a seal between the upper assembly and the base assembly. Creating a seal between the upper assembly and the base assembly allows the process space between the electrode assembly and the base assembly to be filled with process fluid during subsequent operations. The seal also allows the process space to be evacuated (drained) and maintained under reduced pressure or a desired pressure.

[0082]

[0098] During operation 908, the backside region of the substrate is pumped or otherwise reduced to a first backside pressure. The first backside pressure is a pressure in the range of about 75 Torr to about 150 Torr, such as about 90 Torr to about 110 Torr. The backside pressure is sufficient to chuck the substrate to the support element without contacting the substrate to the substrate support surface. In some embodiments, both the pressure in the main portion of the process space and the backside pressure are manipulated. The pressure in the process space and the backside pressure are such that the pressure difference between the process space and the space along the backside of the substrate is about 1 Torr to about 50 Torr, such as about 5 Torr to about 20 Torr, such as about 5 Torr to about 10 Torr. The backside region of the substrate is pumped using one or more pump assemblies or gas assemblies attached to a backside gas connection, such as the backside gas supply connection 702. The backside region as described herein includes the region inside an outermost sealing ring, such as the third sealing ring 734 .

[0083]

[0099] In some embodiments, the pressure maintained in the process space is at or near atmospheric pressure. For example, the pressure in the process space is about 600 Torr to about 800 Torr, such as about 700 Torr to about 800 Torr, for example about 750 Torr. When the pressure in the process space is near atmospheric pressure, the first backside pressure is about 400 Torr to about 650 Torr, such as about 500 Torr to about 600 Torr, for example about 550 Torr to about 600 Torr. The backside pressure is reduced from atmospheric pressure to the first backside pressure, thereby creating a pressure difference between the process space and the space along the backside of the substrate. In some embodiments where the pressure in the process space is closer to atmospheric pressure, the pressure difference between the process space and the space along the backside of the substrate is less than about 250 Torr, for example about 0 Torr to about 250 Torr, for example about 1 Torr to about 200 Torr, for example about 5 Torr to about 200 Torr. This pressure differential is large enough to hold the substrate in place on the substrate support surface during tilting operation 912 described herein, but is small enough during operation 908 that the seal ring is configured to keep the backside of the substrate spaced away from contacting the substrate support surface in order to reduce the heating rate of the substrate.

[0084]

[0100] Either simultaneously with operation 908 or after operation 908, an operation 910 is performed to pump the process space above the substrate. During operation 910, the process space above and around the substrate is pumped to a pre-fluid-fill pressure. The pre-fluid-fill pressure is about 175 Torr to about 250 Torr, such as about 195 Torr to about 225 Torr, such as about 200 Torr to about 210 Torr. Once the process space is at the pre-fluid-fill pressure, the pressure along the backside of the substrate may be simultaneously reduced such that the pressure difference between the process space and the space along the backside of the substrate is still about 1 Torr to about 50 Torr, such as about 5 Torr to about 20 Torr, such as about 5 Torr to about 10 Torr. The process space is pumped using a vacuum pump fluidly coupled to one of the vent or vacuum connections, such as the vent connection 204 or the vacuum connection 504.

[0085]

[0101] In some embodiments, the pre-fill pressure is at or near atmospheric pressure, such as about 600 Torr to about 800 Torr, for example about 700 Torr to about 800 Torr, for example about 750 Torr. A pre-fill pressure near atmospheric pressure reduces pumping time and improves throughput. In some embodiments where the pre-fill pressure is near atmospheric pressure, operation 910 to pump the process space above the substrate may not be necessary.

[0086]

[0102] After operation 910, the process module is rotated about an axis of rotation, such as axis A in FIGS. 2-6. The process module is rotated using one or more actuators, such as actuator 110. One or more bearings, such as bearings 108a, 108b, are utilized to assist in the rotation of the process module about the axis of rotation. The process module is rotated to a process position during operation 912. Operation 912 moves the substrate support surface and the lower surface of the electrode to an angle of about 5 degrees to about 60 degrees, such as about 5 degrees to about 45 degrees, such as about 10 degrees to about 30 degrees, relative to a horizontal plane. The positioning of the process module and the substrate during operation 912 is shown in FIG. 5D. In embodiments described herein, the horizontal plane is the orientation of the substrate support surface and the lower surface of the electrode while in the lowered position and the horizontal loading position. The horizontal plane is the plane of the upper surface of a support plate, such as support plate 106. It has been found that rotating the substrate support surface and the underside of the electrode to an angle such as those described above aids in the introduction of fluid into the process space between the substrate and the electrode with reduced bubbles. The angled orientation also aids in the removal of fluid from the process space.

[0087]

[0103] Either simultaneously with operation 912 or after operation 912, operation 914 is performed. Operation 914 includes pumping or otherwise reducing the pressure of the backside region of the substrate to a second backside pressure. The second backside pressure is a pressure of about 0 Torr to about 20 Torr, such as about 0 Torr to about 15 Torr, such as about 5 Torr to about 10 Torr. When the backside region is reduced to the second backside pressure, the pressure difference between the process space and the space along the backside of the substrate is about 75 Torr to about 125 Torr, such as about 90 Torr to about 110 Torr. The second backside pressure is lower than the first backside pressure. The second backside pressure is a reduced pressure strong enough to bring the substrate into contact with the substrate support surface, reducing movement of the substrate when process fluid is introduced into the process space during operation 916. Upon contact with the substrate support surface, the substrate is heated by the substrate support plate. Thus, rapid heating of the substrate by the substrate support plate is delayed until after the pressure along the backside of the substrate is reduced to the second backside pressure. Once the pressure is reduced to the second backside pressure, the substrate is heated at a rate of about 4° C. / sec to about 20° C. / sec, such as about 5° C. / sec to about 15° C. / sec, such as about 6° C. / sec to about 10° C. / sec. The substrate is heated to a temperature of about 40° C. to about 250° C., such as about 80° C. to about 230° C., such as about 90° C. to about 130° C. The heat is applied using one or more heating elements, such as one or more heating elements 430.

[0088]

[0104] As described with respect to operation 908, in some embodiments where the pressure in the process space is at or near atmospheric pressure, the second backside pressure is about 250 Torr to about 450 Torr, such as about 300 Torr to about 400 Torr, such as about 325 Torr to about 375 Torr. When the backside pressure is reduced from the first backside pressure to the second backside pressure, the pressure difference between the process space and the space along the backside of the substrate increases. As described above, the second backside pressure is a reduced pressure that is strong enough to bring the substrate into contact with the substrate support surface and increase the rate of substrate heating. In some embodiments where the pressure in the process space is closer to atmospheric pressure, the pressure difference between the process space and the space along the backside of the substrate is less than about 450 Torr, such as about 100 Torr to about 450 Torr, such as about 200 Torr to about 450 Torr, such as about 300 Torr to about 450 Torr.

[0089]

[0105] Operation 916 is performed either before, during, or after operation 914. In some embodiments, operation 916 is performed immediately after operation 912 and immediately before operation 914. Operation 916 includes providing a process fluid into the process space from a fluid inlet, such as fluid inlet passage 508. The process fluid is dispensed into the process space using the apparatus of FIGS. 1-6. The process space is filled with the process fluid. The process fluid is injected into the process space, filling the process space in less than 4 seconds, such as less than 3 seconds, such as less than 2 seconds. To fill the process space, the process fluid is injected into the process space at a rate of about 5 L / min to about 20 L / min, such as about 10 L / min to about 15 L / min. In some embodiments described herein, the process space has a volume of about 0.4 L to about 0.6 L, such as about 0.5 L. The process fluid is an intermediate medium, such as a non-gas phase medium, a slurry, a gel, a solution, or a solid medium. They may efficiently maintain the applied voltage level within a particular range as it travels from the electrode assembly to a photoresist layer disposed on a substrate. The processing module during operation 916 is shown in FIG. 5E.

[0090]

[0106] Once the process fluid fills the process space, the vacuum port opening is closed to prevent the process fluid from entering the vacuum pump during operation 918. After the vacuum port opening is closed during operation 918, excess gas and process fluid are exhausted through a vent, such as vent 502.

[0091]

[0107] Either during or after operations 916 and 918, during operation 920, an electric field is applied to the substrate by the electrode and the substrate support surface. By applying an electric field to the substrate, the substrate is treated with an electric field induced post-exposure bake. The electric field is distributed between the substrate and the electrode. The substrate is held at a first voltage. The electrode is held at a second voltage different from the first voltage. The electric field is generated by applying a voltage difference of up to about 5000V, such as up to about 3500V, such as up to about 3000V. The electric field between the electrode and the substrate is about 1×10 7 Less than V / m, e.g., about 1×10 6 Less than V / m, e.g., about 1×10 5 The electric field is approximately 1×10 5 V / m to about 1×10 7 V / m, e.g., about 1×10 5 V / m to about 1×10 6 The strength of the electric field may be in the range of about 1.4×10 V / m. The strength of the electric field is limited by the breakdown voltage of the medium disposed in the process space. In some embodiments, the breakdown voltage of the fluid disposed in the process space is about 1.4×10 7 5E. In some embodiments, a voltage is varied across the surface of the electrodes throughout operation 920. The voltage may be varied by alternating the voltage waveform, the magnitude of the voltage difference, or the location where the voltage difference is varied. In some embodiments, the current applied to the electrodes is varied in contrast to the voltage difference. The current may be varied across the surface of the electrodes as well and may include different waveforms. The current may be alternating current (AC) or direct current (DC).

[0092]

[0108] After operation 920, the generation of the electric field is stopped, and during operation 922, the process fluid is exhausted from the process space through the fluid inlet. Exhausting the process fluid from the process space during operation 922 includes introducing a gas, such as a purge gas, through one of the ventilation or vacuum passages. During operation 922, the vacuum passage is reopened. By introducing a gas into the process space while removing the process fluid, the removal rate of the process fluid may be increased and the amount of residual process fluid present after operation 922 may be reduced. During operation 922, the angle of the process module relative to the horizontal may be increased. Increasing the angle of the process module relative to the horizontal includes increasing the angle of the substrate support surface and the bottom of the electrode relative to the top surface of the support plate. The increased angle may be referred to as the drain angle. The drain angle is about 5 degrees to about 60 degrees, for example, about 5 degrees to about 45 degrees. Exhausting the process fluid from the process space is shown in FIG. 5F.

[0093]

[0109] Either simultaneously with or after operation 922, operation 924 is performed. Operation 924 includes rotating the process module about the axis of rotation back to a horizontal position. Rotating the process module back to a horizontal position includes rotating the process module so that the substrate support surface and the lower surface of the electrode are parallel to the upper surface of the support plate. Rotating back to a horizontal position allows the substrate to be removed in a subsequent operation using the same horizontal robot arm or positioner used in operation 902.

[0094]

[0110] After operation 924, the backside region of the substrate is pumped to a third backside pressure during operation 926. During operation 926, the third backside pressure is about 300 Torr to about 9000 Torr, such as about 400 Torr to about 850 Torr, such as 450 Torr to about 550 Torr. The third backside pressure is greater than the first backside pressure or the second backside pressure. The third backside pressure is an increase in pressure to allow the substrate to be dechucked from the substrate support surface and the substrate support plate. In some embodiments, the third backside pressure is greater than the pressure in the process space to generate an upward force to move the substrate away from the substrate support surface. When the backside region of the substrate is brought to the third backside pressure, the pressure differential between the process space and the space along the backside of the substrate is about -200 Torr to about 200 Torr, such as about -100 Torr to about 100 Torr.

[0095]

[0111] In some embodiments where the process space is close to atmospheric pressure, e.g., about 600 Torr to about 800 Torr, the third backside pressure is similarly at, near, or greater than atmospheric pressure. Thus, during operation 926, the backside pressure is close enough to the pressure in the process space to allow the lift pins to lift the substrate while reducing damage to the backside of the substrate. This pressure difference may be less than 100 Torr, e.g., less than 50 Torr. In some embodiments, the backside pressure during operation 926 is greater than atmospheric pressure to cause the sealing ring and lift pins to "eject" the substrate from the substrate support surface.

[0096]

[0112] Operation 928 is performed either simultaneously with operation 926 or after operation 926. Operation 928 includes actuating the upper and base assemblies back to the open position. When the upper assembly is actuated upward to the open position, the substrate is disengaged from the support elements on the substrate support surface by the lift pins. The substrate is lifted to a position similar to that shown in FIG. 5A. Actuating the upper and base assemblies to the open position includes separating the sealing surfaces of the upper and base assemblies.

[0097]

[0113] After operation 928, the substrate is removed from the processing module during operation 930. The substrate is removed using a positioner or robotic arm and transferred to a different processing module or process station.

[0098]

[0114] The embodiments described herein are beneficial in that the substrate may be processed horizontally while reducing the bubble effect in the post-exposure bake process. The embodiments described herein also allow the electrodes and the substrate to be placed closer together during processing, which reduces the effect of field non-uniformity. The use of a transfer apparatus with multiple openings for the pedestals further allows multiple substrates to be processed at once on a shared apparatus, which increases the throughput of the system and reduces the cost of ownership.

[0099]

[0115] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, which is determined by the following claims.

Claims

1. A substrate processing apparatus, comprising: Support plate, a base portion disposed on the support plate, Base body, a substrate support plate disposed within the base body; a substrate support surface on the substrate support plate; one or more bearings coupled to the base body and configured to rotate the base body about an axis; and a base portion including an actuator coupled to the base body and the support plate; an upper portion disposed above the base portion and the support plate, Electrodes, and a top portion including a lid disposed over the electrode; and a plurality of arms connecting the upper portion and the base portion; An apparatus for processing a substrate, the apparatus being configured to fill a process fluid into a process space defined between the base portion and the upper portion when the upper portion is lowered to a processing position.

2. Each of the plurality of arms includes: An arm actuator disposed below the base body; and The substrate processing apparatus of claim 1 , comprising a shaft disposed through a portion of the arm actuator and the base body, the shaft coupled to the upper portion and configured to raise and lower the upper portion relative to the base body.

3. The one or more bearings include two pillow block bearings, each of the pillow block bearings having: A housing disposed on the support plate; and The substrate processing apparatus of claim 1 , further comprising a bearing shaft disposed through said housing and coupled to said base portion for rotation within said housing.

4. a plurality of lift pins disposed through the base body and the substrate support plate; a lift pin plate disposed below the base body and configured to support each of the plurality of lift pins; and The substrate processing apparatus of claim 1 , further comprising a lift pin bellows assembly disposed between the lift pin plate and the base body and surrounding a portion of the plurality of lift pins.

5. The substrate processing apparatus of claim 1 , wherein the substrate support plate is a heated plate having one or more heating elements disposed therein.

6. The substrate processing apparatus of claim 1 , wherein the substrate support plate is a second electrode disposed opposite the upper electrode.

7. The substrate processing apparatus of claim 1 , wherein the actuator is configured to raise a side of the base body closest to the actuator to tilt the base body.

8. The substrate processing apparatus of claim 7 , wherein the actuator is a gas pressure actuator.

9. A substrate processing apparatus, comprising: Support plate, 1. A substrate processing module comprising: a base portion disposed on the support plate, A base body, a substrate support plate disposed within the base body; a substrate support surface on the substrate support plate; a top portion disposed above the base portion and the support plate, an electrode having a lower surface disposed parallel to the substrate support surface; a lid disposed over the electrode; and a substrate processing module comprising a plurality of arms connecting the top and the base; an actuator coupled to the base body and the support plate; one or more bearings coupled to the base body and configured to rotate the base body about an axis when the actuator moves the base body; and a fluid inlet disposed through the base body; 11. A substrate processing apparatus configured to fill a process space defined between the base and the upper portion with a process fluid through the fluid inlet when the upper portion is lowered to a processing position.

10. The substrate support plate comprises: two or more sealing rings disposed on the substrate support surface; Rear gas duct, and The substrate processing apparatus of claim 9 , further comprising a plurality of backside gas channels disposed along the substrate support surface and in fluid communication with the backside gas conduit.

11. and a fluid supply system fluidly coupled to the fluid inlet, the fluid supply system comprising: A fluid supply valve, and The substrate processing apparatus of claim 9 comprising a fluid exhaust valve.

12. The substrate processing apparatus of claim 9 , wherein the fluid inlet is in fluid communication with the process space, the process space being defined between the base portion and the upper portion when the upper portion is lowered to the processing position.

13. The substrate processing apparatus of claim 12 , wherein an outlet is disposed through the base on an opposite side of the process space from the fluid inlet.

14. The substrate processing apparatus of claim 13 , wherein an air passage is disposed through the upper portion on the opposite side of the process space from the fluid inlet.

15. The substrate processing apparatus of claim 12 , wherein a sealing groove is disposed around the process space in a sealing surface of the base.

16. The substrate processing apparatus according to claim 9 , wherein the fluid inlet is disposed on an opposite side of the axis from the actuator.

17. 1. A method for processing a substrate, comprising: placing the substrate on a substrate support plate while the substrate support plate is in a first position; moving the electrode toward the substrate support plate to create a process space between the electrode and the substrate support plate around the substrate; pumping the backside of the substrate to a first backside pressure; rotating the process space about an axis of rotation to a process position using an actuator; pumping the backside of the substrate to a second backside pressure lower than the first backside pressure; rotating the process space to the process position and supplying a process fluid to the process space through a fluid inlet after pumping the backside of the substrate to the second backside pressure; applying an electric field to the substrate while in the process position using the electrodes; and while in the process position, exhausting the process fluid from the process space.

18. Rotating the process space about the axis of rotation to the process position comprises:

20. The method of claim 17, comprising rotating from the first position to the process position at about 5 degrees to about 60 degrees.

19. Applying the electric field comprises: The method of claim 17 , further comprising applying the electric field between parallel surfaces of the electrode and the substrate support plate.

20. 20. The method of claim 17, further comprising reducing the pressure of the process space to a first process space pressure prior to supplying the process fluid to the process space.

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