Flow plate, fluid introduction device, and film formation device

Abstract

To provide a current plate that can prevent a variation in the speed of deposition on a deposition target object.SOLUTION: A current plate is provided opposite to a plurality of nozzles for injecting fluid and rectifies the fluid, and has: a plurality of high channel resistance part areas that have nozzle opposite areas opposite to the plurality of nozzles; and a low channel resistance area that surrounds the plurality of high channel resistance areas, has a plurality of first through holes formed therein, and has a smaller channel resistance than that of the high channel resistance areas.SELECTED DRAWING: Figure 15

Description

[Technical field]

[0001] An embodiment of the present invention relates to a flow straightening plate, a fluid introducing device having the flow straightening plate, and a film forming apparatus having the fluid introducing device. [Background technology]

[0002] A fluid introduction device is known that injects gas from a nozzle and introduces the gas into a chamber through a flow straightening plate having through holes. Also known is a film formation device that uses such a fluid introduction device to introduce gas into a chamber and form a film on a substrate such as a wafer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2012-126968 A [Patent Document 2] Patent No. 4819411 [Patent Document 3] JP 2013-149513 A Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present invention is to provide a flow straightening plate, a fluid introducing device, and a film forming apparatus that are capable of suppressing fluctuations in the film forming rate on a film forming target. [Means for solving the problem]

[0005] According to an embodiment, a straightening plate that is provided opposite a plurality of nozzles that eject fluid and straightens the flow of the fluid has a plurality of high flow resistance regions having nozzle opposing regions that face each of the plurality of nozzles, and low flow resistance regions that surround each of the plurality of high flow resistance regions, have a plurality of first through holes formed therein, and have a flow resistance lower than that of the high flow resistance regions. The plurality of nozzles includes a pyrometer nozzle through which a purge gas is introduced. The straightening plate further includes a purge gas flow passage provided opposite the pyrometer nozzle, through which the purge gas passes, and having an opening area larger than that of the plurality of first through holes. [Brief description of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic perspective view showing a film forming apparatus according to a first embodiment, a first comparative example, and a second embodiment. [Diagram 2] FIG. 2 is a top view of the film forming apparatus according to the first and second embodiments, as viewed from the direction indicated by the arrow II in FIG. [Diagram 3] 3 is a schematic diagram showing the positional relationship between a flow straightening plate and a nozzle of the fluid introducing device shown in FIG. 2 of the film forming apparatus according to the first and second embodiments. FIG. [Figure 4] IV-IV cross-sectional view in FIG. 2 and FIG. 3 . [Diagram 5] FIG. 2 is a schematic perspective view showing a film formation rate distribution on a stationary substrate in the film formation apparatus according to the first embodiment. [Figure 6] 4 is a schematic cross-sectional view showing the positional relationship between the current plate and the nozzle when the current plate of the fluid introducing device according to the first embodiment is attached with a deviation of 0.3 mm from the reference position of the chamber. FIG. [Figure 7] FIG. 2 is a schematic perspective view showing a film formation rate distribution on a stationary substrate in the film formation apparatus according to the first embodiment. [Figure 8] 8 is a graph showing the relationship between the distance from the central axis of the substrate shown in FIGS. 5 and 7 and the film formation rate in the film formation apparatus according to the first embodiment. [Figure 9] 4 is a schematic diagram showing the positional relationship between a flow straightening plate and a nozzle of a fluid introducing device of a film forming apparatus according to Comparative Example 1. FIG. [Figure 10] XX cross-sectional view in FIG. 9 of Comparative Example 1. [Figure 11] FIG. 2 is a schematic perspective view showing a film deposition rate distribution on a stationary substrate in the film deposition apparatus of Comparative Example 1. [Figure 12] 13 is a schematic cross-sectional view showing the positional relationship between the current plate and the nozzle when the current plate of the fluid introducing device of Comparative Example 1 is attached with a deviation of 0.3 mm from the reference position of the chamber. FIG. [Figure 13] FIG. 2 is a schematic perspective view showing a film deposition rate distribution on a stationary substrate in the film deposition apparatus of Comparative Example 1. [Figure 14] 14 is a graph showing the relationship between the distance from the central axis of the substrate shown in FIGS. 11 and 13 and the film deposition rate of the film deposition apparatus of Comparative Example 1. [Figure 15] FIG. 11 is a schematic top view showing a flow straightening plate of a fluid introducing device of a film forming apparatus according to a second embodiment. [Figure 16] FIG. 16 is a diagram showing the position indicated by reference symbol XVI in FIG. 15. [Figure 17] Cross-sectional view taken along the line XVII-XVII in FIG. 15 . [Figure 18] 13 is a schematic perspective view showing a film formation rate distribution at an arbitrary time on a rotating substrate in a film formation apparatus in which a current plate according to a second embodiment is disposed at a position offset by X+1.5 mm from a reference position of the chamber. FIG. [Figure 19] FIG. 11 is a schematic perspective view showing a film formation rate distribution at an arbitrary time on a rotating substrate in a film formation apparatus in which a current plate according to a second embodiment is disposed offset by X-1.5 mm from a reference position of the chamber. [Figure 20] 13 is a graph showing the relationship between the distance from the central axis of the substrate and the time-averaged film formation rate in a film formation apparatus in which the current plate according to the second embodiment is disposed offset from the reference position of the chamber. [Figure 21] FIG. 13 is a schematic top view showing a current plate according to a first modified example of the second embodiment. [Figure 22] 13 is a graph showing the relationship between the distance from the central axis of the substrate and the film formation rate in a film formation apparatus in which a current plate according to a first modification of the second embodiment is disposed offset from a reference position of the chamber. [Diagram 23] A formula for calculating the difference in deposition rate from the center to the edge of a substrate. [Figure 24] FIG. 13 is a schematic top view showing a current plate according to a second modified example of the second embodiment. [Diagram 25] 25 is a contour map showing that when a film is formed on a substrate with the baffle plate shown in FIG. 24 attached at the reference position of the chamber, no upward current of gas is generated in the chamber directly below the baffle plate. [Figure 26] 16 is a contour map showing an upward gas current in a chamber immediately below the current plate shown in FIG. 15 according to the second embodiment when a film is formed on a substrate with the current plate attached at a reference position in the chamber. [Figure 27] FIG. 13 is a schematic top view showing a current plate according to a comparative example. [Figure 28]28 is a contour map showing the upward gas current in the chamber directly below the baffle plate when a film is formed on a substrate with the baffle plate shown in FIG. 27 attached at the reference position of the chamber. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, a first embodiment and a second embodiment will be described with reference to the drawings.

[0008] [First embodiment] 1 shows a film formation apparatus 10 for epitaxially growing a single crystal film on a surface of a substrate 8 such as a wafer by using, for example, a CVD (Chemical Vapor Deposition) method. The film formation apparatus 10 has, for example, a cylindrical chamber 12, a fluid introduction device (flow rectifier) ​​14 detachably fixed to one end (upper part) of the chamber 12, an exhaust part 16 provided at the other end (lower part) of the chamber 12, and a rotation stage 18 for the substrate 8 provided within the chamber 12.

[0009] One end of the chamber 12 is disposed at the upper end of the chamber 12, and the other end of the chamber 12 is disposed at the lower end of the chamber 12. The chamber 12 is preferably formed rotationally symmetrical with respect to the central axis C. A fluid introduction device 14 is fixed to one end of the chamber 12. An exhaust unit 16 is provided at the other end of the chamber 12. The inside of the chamber 12 may be at atmospheric pressure, or may be at a pressure lower than atmospheric pressure by, for example, a suction pump (not shown) connected to the exhaust unit 16. Here, the inside of the chamber 12 will be described as being at a pressure lower than atmospheric pressure.

[0010] The rotating stage 18 is provided below the chamber 12. The rotating stage 18 can hold the substrate 8. The rotating stage 18 can rotate around the central axis C of the chamber 12 relative to the chamber 12 by a motor (not shown) or the like. It is preferable that the rotation axis of the rotating stage 18 and the central axis C of the chamber 12 coincide with each other. Therefore, the film forming apparatus 10 can rotate the substrate 8 at a rotation speed of 1000 rpm by rotating the rotating stage 18 around the central axis C of the chamber 12 at a rotation speed of, for example, 1000 rpm while the substrate 8 is held on the rotating stage 18.

[0011] In this embodiment, the substrate 8 is, for example, a disk having a diameter of 6 inches (approximately 150 mm).

[0012] The fluid introduction device 14 has a straightening plate 22 for straightening the flow of the fluid, and a plurality of nozzles 24 for injecting a plurality of types of gas from a gas source (not shown) outside the film formation apparatus 10 toward the straightening plate 22. The straightening plate 22 faces the nozzles 24 for injecting the fluid. The fluid introduction device 14 has, as an example, a cover (blocking plate) 26 for preventing leakage of the gas, and has a structure in which the plurality of nozzles 24 penetrate the cover 26. The gap between the outer circumferential surface of each nozzle 24 and the cover 26 is sealed. That is, in order to prevent leakage of the gas introduced into the film formation apparatus 10, one end of the chamber 12 is closed by the cover 26 of the fluid introduction device 14. The fluid introduction device 14 has a space (fluid introduction portion) 28 into which the gas is supplied between the cover 26 and the straightening plate 22.

[0013] FIG. 2 shows a top view of the nozzle 24 and the current plate 22 as viewed from the direction indicated by the arrow II in FIG. 1 of the film forming apparatus 10 according to the first embodiment. FIG. 3 shows a schematic diagram of the current plate 22, in which the position of the nozzle 24 shown in FIG. 2 relative to the current plate 22 is drawn by a broken line. FIG. 4 shows a schematic cross-sectional view of the position along the line IV-IV in FIG. 2 and FIG. 3, showing the positional relationship between the current plate 22 and the nozzle 24 when the current plate 22 is attached to the chamber 12 at a reference position in the film forming apparatus 10 according to the first embodiment. FIG. 5 shows a perspective view of the film formation rate distribution on the substrate 8 when a film is formed on the stationary substrate 8 in a state where the current plate 22 shown in FIG. 4 is attached to one end of the chamber 12 of the film forming apparatus 10 shown in FIG. 1. FIG. 6 shows a schematic cross-sectional view showing the positional relationship between the current plate 22 and the nozzle 24 when the current plate 22 is attached to the chamber 12 with a shift of 0.3 mm, which is within the range of allowable error, from the reference position. FIG. 7 shows a perspective view of the film formation rate distribution on the substrate 8 when a film is formed on the stationary substrate 8 with the current plate 22 shown in FIG. 6 attached to one end of the chamber 12 of the film formation apparatus 10 shown in FIG.

[0014] 2 to 4 and 6, the rectifying plate 22 is formed in a disk shape from a light-transmitting material such as quartz. It is preferable that the central axis of the rectifying plate 22, the central axis C of the chamber 12 shown in FIG. 1, and the rotation axis of the rotating stage 18 coincide with each other. In the example shown in FIG. 4, the central axis of the rectifying plate 22, the central axis C of the chamber 12, and the rotation axis of the rotating stage 18 coincide with each other. However, in the example shown in FIG. 6, the central axis of the rectifying plate 22 is parallel to the central axis C of the chamber 12 and the rotation axis of the rotating stage 18, but is misaligned by 0.3 mm with respect to the central axis C of the chamber 12 and the rotation axis of the rotating stage 18.

[0015] In this embodiment, the diameter of the rectifying plate 22 is, for example, 186 mm, which is about 1.2 times the diameter of the substrate 8. The inner diameter of the region in the chamber 12 between one end of the chamber 12 and the rotation stage 18 is formed to be approximately the same as the diameter of the rectifying plate 22 or larger than the diameter of the rectifying plate 22.

[0016] The current plate 22 is detachably fixed to one end of the chamber 12. The current plate 22 is replaceable. At this time, the allowable error when fixing the current plate 22 to one end of the chamber 12 is a predetermined size, for example, ±0.3 mm in the radial direction with respect to the central axis C.

[0017] 2 and 3, the straightening vane 22 has a blocked portion (high flow path resistance region where the flow path resistance is infinite) 32, and a low flow path resistance region 33 having a plurality of through holes (first through holes) 34 provided so as to surround the blocked portion (high flow path resistance region) 32. Each of the plurality of through holes 34 is formed as a gas flow path. Here, the flow path resistance refers to a force with which the flow of a fluid is hindered by the shape of a flow path when the fluid passes through the flow path.

[0018] The through holes 34 are basically formed at a predetermined interval (pitch), but have some regions where the intervals are different. The opening amount (opening diameter) of the through holes 34 is preferably the same, but may be different. The opening amount is appropriately set, for example, to a diameter of about 2.6 mm to 3.5 mm. The size and number of the through holes 34 per unit area are preferably constant from the vicinity of the central axis of the straightening plate 22 to the vicinity of the outer periphery. The through holes 34 are arranged, for example, in a lattice pattern. The pitch width of the through holes 34 is, for example, 8 mm.

[0019] Among the through holes 34 in the current plate 22, the through hole 34 located closest to the outer periphery and farthest from the central axis of the current plate 22 is preferably located directly above the outer periphery of the substrate 8 or outside the outer periphery of the substrate 8. In this case, it is easy to form a uniform film even at the position of the outer periphery of the substrate 8.

[0020] 4 and 6 are disposed so as to inject, for example, a gas for film formation parallel to the central axis of the current plate 22. In this embodiment, the direction of gas injection from the multiple nozzles 24 is preferably parallel to the central axis C of the chamber 12.

[0021] 2 to 4 and 6, each nozzle 24 faces a blocked portion (high flow path resistance region) 32 so as to spray fluid toward the blocked portion (high flow path resistance region) 32. The tip of each nozzle 24 is spaced from the blocked portion (high flow path resistance region) 32. The blocked portion (high flow path resistance region) 32 is a region from which gas is directly sprayed from the nozzle 24, although it varies depending on the shape of the nozzle 24, the flow rate of the sprayed fluid such as gas, the spray angle which is the angle at which the sprayed fluid such as gas spreads, the spray width which is the spread width over the distance the sprayed fluid such as gas reaches from the tip of the nozzle 24, the spray pattern which is the cross-sectional shape of the sprayed fluid such as gas when it is diffused, and the like. On the other hand, the low flow resistance region 33, which is a region other than the blocking portion (high flow resistance region) 32 and in which the multiple through holes 34 are provided, is a region in which gas is not directly injected from the nozzle 24, and among the multiple through holes (first through holes) 34, the through hole 34 closest to the nozzle facing region 36 opposing the tip of the nozzle 24 is disposed at a position where the gas injected from the nozzle 24 is indirectly introduced. That is, the through hole 34 is formed outside the spray pattern formed by the gas injected from the nozzle 24 in relation to the spray angle at the distance (spray distance) between the nozzle 24 and the straightening plate 22. Among the multiple through holes 34, the through hole 34 closest to the nozzle facing region 36 is formed in a region excluding the spray pattern at the spray distance defined as the distance between the tip of the nozzle 24 and the blocking portion 32.

[0022] That is, the blocked portion (high flow path resistance region) 32 has a nozzle facing region 36 (see Figs. 3, 4, and 6) facing the nozzle 24. The nozzle facing region 36 is located in a region excluding the through-hole 34, and is through-hole-less in that no through-hole 34 is provided. In other words, in the fluid introduction device 14, the nozzle 24 that ejects the fluid is disposed in a position that does not face the through-hole 34. The nozzle facing region 36 is formed in a region where the through-holes 34 are basically formed regularly (at the same intervals) and have different intervals.

[0023] The opening diameter of the nozzle 24 is, for example, 13 mm.

[0024] 2 and 3, when viewed from above, the straightening plate 22 is formed radially outward from the central axis of the straightening plate 22 and line-symmetrical with respect to an imaginary line (X-axis) passing through the centers of three pyrometer nozzles 44 (described later). In this embodiment, the through-holes 34 are formed at positions that are point-symmetric or approximately point-symmetrical with respect to the central axis of the straightening plate 22, or line-symmetric or approximately line-symmetrical with respect to a predetermined axis passing through the central axis of the straightening plate 22 along the blocked portion (high flow path resistance region) 32.

[0025] In this embodiment, the fluid introducing device 14 has a pyrometer nozzle 44 for indirectly monitoring the temperature of the substrate 8 by a pyrometer. A purge gas is introduced into the pyrometer nozzle 44, and no through-hole 34 is provided in a position facing the pyrometer nozzle 44 (a pyrometer nozzle facing region 46 (see FIG. 3)). In other words, in the fluid introducing device 14, the pyrometer nozzle 44 is disposed in a position not facing the through-hole 34. The pyrometer receives light (infrared light) emitted from the substrate 8 through the straightening plate 22, which is a light-transmitting material, and the pyrometer nozzle 44 to measure the temperature.

[0026] The opening diameter of the pyrometer nozzle 44 is, for example, 13 mm, which is similar to that of the nozzle 24. The opening diameter of the pyrometer nozzle 44 may be larger or smaller than that of the nozzle 24.

[0027] Next, the operation of the fluid introducing device 14 of the film forming apparatus 10 according to the first embodiment will be described.

[0028] 1 is rotated at, for example, 1000 rpm, gases are sprayed as multiple types of fluids from nozzles 24 toward blocked portions (high flow path resistance regions) 32 of straightening plates 22 of fluid introduction device 14. At this time, through-holes 34 are preferably outside the ranges of the spray patterns of the multiple types of gases. Then, as shown in FIG. 4, the multiple types of gases sprayed toward blocked portions 32 reach blocked portions 32 on the surface of straightening plates 22 at respective predetermined spray angles, and then spread radially from blocked portions 32 to reach through-holes 34.

[0029] As the energy for causing the gas to undergo a chemical reaction in the chamber 12, for example, heat or the like is used.

[0030] The gas flowing from the blocked portion (high flow path resistance region) 32 toward the through-hole 34 flows from one end of the chamber 12 toward the other end of the chamber 12 through the through-hole 34. That is, by causing the fluid to flow into the chamber 12 through the through-hole 34 of the fluid introducing device 14, multiple types of gases are introduced into the chamber 12 and a film is formed on the substrate 8.

[0031] On the other hand, in the example shown in Fig. 4, the rectifying plate 22 is installed at the reference position (normal installation position). In the example shown in Fig. 6, the rectifying plate 22 is installed shifted by 0.3 mm from the reference position.

[0032] Fig. 5 shows the results of a simulation of the film formation rate distribution on the substrate 8 when the current plate 22 is attached to the reference position of the chamber 12 shown in Fig. 4, and Fig. 7 shows the results when the current plate 22 is attached to the chamber 12 so as to cause an error of 0.3 mm from the reference position shown in Fig. 6. The film formation rate distributions in Fig. 5 and Fig. 7 are shown as relative speeds when the minimum speed in Fig. 5 is set to 1.0. The simulation results shown in Fig. 5 and Fig. 7 show the results when the film is formed in a stationary state without rotating the rotation stage 18. It can be seen that in both cases, the film formation rate is higher at a position slightly shifted from the center of the substrate 8, and the same tendency is observed.

[0033] Furthermore, the film formation rate in the substrate 8 in each of the examples shown in Fig. 4 and Fig. 6 was simulated, and the results are shown in Fig. 8. Comparing the case where the current plate 22 is attached to one end of the chamber 12 shown in Fig. 4 without any error in the reference position (normal attachment position) (plotted with black circles) with the case where the current plate 22 is attached to one end of the chamber 12 shown in Fig. 6 with an error of 0.3 mm from the reference position (plotted with white circles), it is found that no significant change is observed. In this case, the fluctuation rate of the film formation rate at the center of the substrate 8 was suppressed to about 6%.

[0034] Comparative Example 1 Here, the current plate 122 of Comparative Example 1 will be described with reference to FIGS.

[0035] As shown in Figures 9, 10, and 12, in Comparative Example 1, the positional relationship between the straightening plate 122 and the nozzle 124 of the fluid introduction device 14 is different from that in the first embodiment, but the positional relationship between the straightening plate 22 and the nozzle 24 of the fluid introduction device 14 in the first embodiment described above is the same as that in the first embodiment.

[0036] Fig. 9 shows the positional relationship between the current plate 122 and the nozzle 124 of Comparative Example 1 of the fluid introducing device 14. Fig. 10 shows a schematic cross-sectional view of a position along line XX in Fig. 9 showing the positional relationship between the current plate 122 and the nozzle 124 when the current plate 122 is attached to a reference position with respect to the chamber 12 of the film forming apparatus 10 of Comparative Example 1. Fig. 12 shows a schematic cross-sectional view showing the positional relationship between the current plate 122 and the nozzle 124 when the current plate 122 is attached to one end of the chamber 12 of the film forming apparatus with a shift of 0.3 mm from the reference position, which is within the allowable error range.

[0037] Unlike the first embodiment, in Comparative Example 1, each nozzle 124 faces a through-hole 134, not a blocked portion (high flow path resistance region) 132, as shown in Figures 9, 10, and 12. That is, the through-hole 134 is formed directly below the nozzle 124. In the case of Figure 10 where the positional relationship between the nozzle 124 and the straightening plate 122 is in a predetermined position and there is no positional deviation, it is preferable that the central axis of the nozzle 124 and the central axis of the through-hole 134 are coaxial.

[0038] FIG. 11 shows a perspective view of a simulation result of the film formation rate distribution on the substrate 8 when the current plate 122 is attached to one end of the chamber 12 shown in FIG. 10 without any error at the reference position. FIG. 13 shows a perspective view of a simulation result of the film formation rate distribution on the substrate 8 when the current plate 122 is attached to one end of the chamber 12 shown in FIG. 12 with an error of 0.3 mm from the reference position. The film formation rate distributions in FIG. 11 and FIG. 13 are shown as relative speeds when the minimum speed in FIG. 13 is set to 1.0. The simulation results shown in FIG. 11 and FIG. 13 show the results when the film is formed in a stationary state without rotating the rotating stage 18. In FIG. 11, the film formation rate distribution is large at the center of the substrate 8. In FIG. 13, the film formation rate distribution is large at a position slightly shifted from the center of the substrate 8. It can be seen that the simulation results shown in FIG. 11 and FIG. 13 have different trends in the film formation rate distribution.

[0039] Further, the film formation rate in the substrate 8 in each of the examples shown in Fig. 10 and Fig. 12 was simulated. As shown in Fig. 14, when the baffle plate 122 was attached to one end of the chamber 12 at a reference position without any error (plotted with black circles), the film formation rate was faster than when the baffle plate 122 was attached with an error of 0.3 mm from the reference position (plotted with white circles), and it can be seen that the film formation rate changes significantly. In this case, the rate of variation in the film formation rate at the center of the substrate 8 was about 20%.

[0040] (Comparison between this embodiment and Comparative Example 1) In Comparative Example 1, since through-hole 134 is formed directly below nozzle 124, a portion of the gas sprayed from nozzle 124 passes directly through through-hole 134. When current plate 122 is attached to chamber 12 shifted by 0.3 mm from the reference position, the relative positions of nozzle 124 and through-hole 134 of current plate 122 are shifted, and this causes changes in the inflow direction, speed, etc. of the gas introduced directly from nozzle 124 through through-hole 134 into chamber 12. It is believed that this causes a difference of 20% in the film formation speed at the center of substrate 8.

[0041] On the other hand, in this embodiment, since a blocked portion (high flow path resistance region) 32 is formed immediately below the nozzle 24, the gas injected from the nozzle 24 does not pass directly through the through-holes 34, but reaches the blocked portion (high flow path resistance region) 32, spreads radially, and is then introduced into the chamber 12 through the through-holes 34. Therefore, even if the current plate 22 is attached to the chamber 12 with a deviation of 0.3 mm from the reference position and the relative position between the nozzle 24 and the through-holes 34 of the current plate 22 is deviated by 0.3 mm, the change in the film formation rate due to the deviation is suppressed to about 6%.

[0042] Therefore, the film formation apparatus 10, the fluid introducing device 14, and the current plate 22 according to this embodiment can suppress fluctuations in the film formation rate on the substrate 8 due to mounting errors of the current plate 22 relative to the chamber 12.

[0043] The fluid introducing device 14 of this embodiment can be used when ejecting not only gas but also liquid from the nozzle 24.

[0044] In the present embodiment, an example has been described in which the straightening plate 22 is disk-shaped. The straightening plate 22 is not limited to a disk-shaped shape, and various shapes such as an elliptical shape and a rectangular shape are acceptable.

[0045] [Second embodiment] Next, a second embodiment will be described with reference to Figures 15 to 20. The second embodiment is a modified example of the first embodiment, and the same members as those described in the first embodiment or members having the same functions are denoted by the same reference numerals as much as possible, and detailed descriptions thereof will be omitted.

[0046] Fig. 15 shows a schematic top view of the current plate 222 of the fluid introducing device 14 of the film forming apparatus 10 according to the second embodiment. Fig. 16 shows a diagram showing the position indicated by reference symbol XVI in Fig. 15. Fig. 17 shows a cross-sectional view taken along line XVII-XVII in Fig. 15.

[0047] In this embodiment, an example will be described in which a straightening plate 222 is used instead of the straightening plate 22 of the fluid introducing device 14 of the film forming apparatus 10 described in the first embodiment. The fluid introducing device 14 of the film forming apparatus 10 according to this embodiment has a straightening plate 222 that straightens the flow of a fluid, a plurality of nozzles 24 that spray a plurality of types of gases from a gas source toward the straightening plate 222, and a plurality of pyrometer nozzles.

[0048] As shown in FIG. 15, the current plate 222 according to this embodiment has the same size as the current plate 22 described in the first embodiment and is, for example, disk-shaped. The current plate 222 has, for example, three purge gas passages 246. The pyrometer nozzle into which the purge gas is introduced is disposed directly above the purge gas passage 246 of the current plate 222. The purge gas passages 246 are disposed, for example, at approximately equal intervals along a certain radial direction from the central axis of the current plate 222. The central axis of each purge gas passage 246 is located on the +X axis with the central axis of the current plate 222 as the origin. In the purge gas passage 246, for example, argon gas or hydrogen gas is passed through the current plate 222 into the chamber 12 as a purge gas. Therefore, the purge gas is supplied into the chamber 12 through the purge gas passage 246. In this embodiment, the opening diameter of each purge gas passage 246 is, for example, 18 mm.

[0049] As shown in FIG. 16, the rectifying plate 222 has a high flow resistance region 232 having a nozzle facing region facing the nozzle 24, and a low flow resistance region 234 provided so as to surround the high flow resistance region 232. In the rectifying plate 222, a plurality of through holes 252, 254 as a flow path for passing a reactive gas for film formation are arranged at a constant pitch. In the rectifying plate 222, it is sufficient that the low flow resistance region 234 is formed outside the high flow resistance region 232. In this embodiment, the plurality of through holes 252, 254 are arranged at a pitch of, for example, 8 mm. In addition, in the rectifying plate 222, there may be a position where the through holes 254 are not formed at a constant pitch. In the rectifying plate 222, there may be a position where the first through hole 252 and the second through hole 254 are not formed at a constant pitch.

[0050] Among the through holes 252, 254 of the current plate 222, the through hole 252, 254 located closest to the outer periphery of the current plate 222 and farthest from the central axis of the current plate 222 is preferably located directly above the outer periphery of the substrate 8 or outside the outer periphery of the substrate 8. In this case, it is easy to form a uniform film even at the position of the outer periphery of the substrate 8.

[0051] The high flow path resistance region 232 has a plurality of first through holes (second through holes) 252 of a first diameter. The low flow path resistance regions 234 are each provided to surround the high flow path resistance region 232 and have one or a plurality of second through holes (first through holes) 254 of a second diameter having a larger opening rate than the first through holes 252 of the high flow path resistance region 232. The first through holes 252 are formed to have a smaller diameter than the second through holes 254. For example, the diameter of the first through holes 252 is 5 mm, and the diameter of the second through holes 254 is 7 mm.

[0052] As shown in FIG. 15, the current plate 222 has, from the inside to the outside, a first zone Z1, a second zone Z2, and a third zone Z3. The first zone Z1 is an inner region of a disk concentric with the central axis of the current plate 222. The second zone Z2 is an outer annular region of the first zone Z1. The third zone Z3 is an outer annular region of the second zone Z2. The outer edge of the third zone Z3 coincides with the outer edge of the current plate 222. The distance between the central axis of the current plate 222 and the outer edge of the first zone Z1 (the inner edge of the second zone Z2), the distance between the outer edge of the first zone Z1 and the outer edge of the second zone Z2 (the inner edge of the third zone Z3), and the distance between the outer edge of the second zone Z2 and the outer edge of the third zone Z3 are, for example, equidistant. Each of the zones Z1, Z2, and Z3 has a high flow path resistance region 232 and a low flow path resistance region 234. There are four first through holes 252 in the first zone Z1, four first through holes 252 in the second zone Z2, and four first through holes 252 in the third zone Z3. In these cases, the first through holes 252 in each of the zones Z1, Z2, and Z3 are located at the vertices of a square formed by line segments having a length corresponding to a constant pitch.

[0053] The opening diameter of the nozzle 24 shown in FIG. 17 is, for example, 13 mm. As shown in FIG. 17, each nozzle 24 faces the high flow resistance region 232 so as to inject a fluid toward the high flow resistance region 232. The tip of each nozzle 24 is spaced from the high flow resistance region 232 of the straightening plate 222. Depending on the shape of the nozzle 24, the flow rate of the fluid such as injected gas, the spray angle which is the angle at which the injected fluid such as injected gas spreads, the spray width which is the spread width at the distance the injected fluid such as injected gas reaches from the tip of the nozzle 24, the spray pattern which is the cross-sectional shape when the injected fluid such as injected gas is diffused, and the like, the multiple first through holes 252 are arranged at a position where the gas injected from the nozzle 24 is directly introduced. For this reason, the first through holes 252 are formed inside the outer edge of the spray pattern formed by the gas injected from the nozzle 24 in relation to the spray angle at the distance (spray distance) between the nozzle 24 and the straightening plate 222, and the like.

[0054] It is preferable that the central axis of the nozzle 24 is disposed so as to intersect with the center of gravity of a square having vertices at the centers of the respective sets of four first through-holes 252 .

[0055] On the other hand, the multiple second through holes 254 in the low flow path resistance region 234 are disposed at positions where the gas jetted from the nozzle 24 is indirectly introduced. The second through holes 254 are formed outside the outer edge of the spray pattern formed by the gas jetted from the nozzle 24 in relation to the spray angle at the distance (spray distance) between the nozzle 24 and the straightening plate 222. For this reason, of the multiple second through holes 254, the second through hole 254 closest to the high flow path resistance region 232 is formed in a region excluding the spray pattern at the spray distance defined as the distance between the tip of the nozzle 24 and the high flow path resistance region 232.

[0056] The positional relationship between the nozzle 24 and the first through hole 252 is preferably such that they are spaced apart from each other at an equal distance with respect to the central axis of the nozzle 24. For example, the first through hole 252 may be formed on the central axis of the nozzle 24, and a further first through hole 252 may be formed in an annular shape outside the first through hole 252. That is, the central axis of the nozzle 24 may coincide with the central axis of one through hole 252 in each set of the first through holes 252. In this case as well, the nozzle 24 does not face the second through hole 254.

[0057] The distance between the nozzle 24 and the straightening plate 222 is set to a distance that allows gas to flow not only through the first through-hole 252 but also through the second through-hole 254. In this embodiment, the distance between the nozzle 24 and the straightening plate 222 is set to, for example, 2.5 mm.

[0058] The current plate 222 according to this embodiment is attached to the chamber 12 in the same manner as the current plate 22 described in the first embodiment, and the gas flow when a film is formed on the substrate 8 in the chamber 12 will be described.

[0059] When the film formation gas is sprayed from the nozzle 24 toward the straightening plate 222, part of the gas enters the chamber 12 through the first through-hole 252 in the high flow path resistance region 232 on the inside of the spray pattern formed by the gas as shown in Figures 16 and 17. The remaining gas abuts against the upper surface of the straightening plate 222 and spreads along the upper surface of the straightening plate 222. Since the second through-hole 254 in the low flow path resistance region 234 is formed outside the spray pattern of the gas sprayed from the nozzle 24, part of the gas enters the chamber 12 through the second through-hole 254.

[0060] When gas is introduced into the chamber 12 through the rectifying plate 222, the pressure distribution in the chamber 12 near the lower surface of the rectifying plate 222 changes. The second through-holes 254 have a larger opening diameter than the first through-holes 252, and gas passes through the second through-holes 254 more easily than through the first through-holes 252. In addition, the number of the second through-holes 254 is greater than that of the first through-holes 252. For this reason, the rectifying plate 222 can balance the flow rate of gas that directly enters the chamber 12 through the first through-holes 252 and the flow rate of gas that enters the chamber through the second through-holes 254. In addition, since the through-holes 252 and 254 are arranged at a constant pitch, the pressure distribution in the chamber 12 near the lower surface of the rectifying plate 222 is prevented from becoming uneven.

[0061] For example, when the straightening plate 22 described in the first embodiment is used, after the gas is injected into the blocked portion (high flow path resistance region) 32, the gas passes through the through holes 34 on the outside of the blocked portion (high flow path resistance region) 32 and is introduced into the chamber 12. Since the gas is introduced into the chamber 12 through the through holes 34, it is assumed that the pressure is high directly below the through holes 34 and that the pressure is reduced in the region on the lower surface side of the straightening plate 22 between the adjacent through holes 34. For this reason, the gas flows to the lower surface side of the region with low pressure other than directly below the through holes 34, which may cause agitation or backflow of the gas in the chamber 12, making it difficult to control the gas flow in the chamber 12.

[0062] As described in the first embodiment, the current plate 222 according to this embodiment can suppress the variation in the film formation rate on the substrate 8 due to the attachment error of the current plate 222 to the chamber 12. In addition, the current plate 222 according to this embodiment can suppress the bias of the pressure distribution in the chamber 12 near the lower surface of the current plate 222 by the first through hole 252. Therefore, by attaching the current plate 222 according to this embodiment to the chamber 12, the mixing and backflow of the gas in the chamber 12 can be suppressed, and the gas flow in the chamber 12 can be easily controlled. Then, by controlling the gas flow in the chamber 12 for each of the zones Z1, Z2, and Z3, for example, the film formation rate can be controlled according to the distance from the center of the substrate 8.

[0063] The first through-hole 252 and the second through-hole 254 can be set to an appropriate size, such as an appropriate diameter, by maintaining the size relationship between them. Although it depends on the flow rate per unit time of the purge gas introduced into the chamber 12 through the purge gas flow passage 246 and the flow rate per unit time of the gas injected from the nozzle 24, by appropriately enlarging the first through-hole 252 and the second through-hole 254, the flow of the gas line contributing to film formation can be strengthened and the influence of the flow of the purge gas supplied into the chamber 12 through the straightening plate 222 can be suppressed.

[0064] FIG. 18 shows a simulation result of the film formation rate distribution at any time on the substrate 8 rotated by the film formation apparatus 10 when the current plate 222 is attached at a position shifted by 1.5 mm in the +X-axis direction from the reference position of the chamber 12. FIG. 18 shows a perspective view of the substrate 8. FIG. 19 shows a simulation result of the film formation rate distribution at any time on the substrate 8 rotated by the film formation apparatus 10 when the current plate 222 is attached at a position shifted by 1.5 mm in the -X-axis direction from the reference position of the chamber 12. FIG. 19 shows a perspective view of the substrate 8. Here, 1.5 mm is larger than 0.3 mm, which is the allowable error with respect to the reference position when the current plate 222 is attached to the chamber 12. The film formation rate distributions in FIG. 18 and FIG. 19 are shown as relative speeds when the minimum speed in FIG. 18 is set to 1.0. In the example shown in FIG. 18, the film formation rate was high near the center of the substrate 8. In the example shown in FIG. 19, the film formation rate was high at a position shifted from the center of the substrate 8.

[0065] The film formation rate in the substrate 8 in each of the examples shown in FIG. 18 and FIG. 19 was simulated, and the results are shown in FIG. 20. FIG. 20 is a graph showing the relationship between the distance from the central axis of the substrate 8 and the time-averaged film formation rate in the film formation apparatus 10 in which the current plate 222 according to the second embodiment is disposed shifted from the reference position of the chamber 12. The black circle plot shown in FIG. 20 is an example in which the current plate 222 is attached to one end of the chamber 12 shifted from the reference position by +1.5 mm in the X-axis direction. The white circle plot shown in FIG. 20 is an example in which the current plate 222 is attached to one end of the chamber 12 shifted from the reference position by -1.5 mm in the X-axis direction. Comparing the black circle plot and the white circle plot in FIG. 20, it can be seen that no significant change is observed. This tendency is approximately consistent with the tendency shown in FIG. 8 of the first embodiment. The fluctuation rate of the film formation rate at the center of the substrate 8 was suppressed to about 7%. As the mounting position of the rectifying plate 222 relative to the chamber 12 approaches the reference position, the four first through-holes 252 are disposed at an equal distance from the central axis of the nozzle 24. For this reason, when the rectifying plate 222 is mounted in the chamber 12 and used, it is expected that the rate of variation in the film formation rate at the center of the substrate 8 can be further reduced.

[0066] Therefore, according to this embodiment, it is possible to provide a straightening plate 222 capable of suppressing fluctuations in the film formation rate on the film formation target, for example before and after replacing the straightening plate 222 due to maintenance, a fluid introduction device 14 having the straightening plate 222, and a film formation apparatus 10 having the fluid introduction device 14.

[0067] In this embodiment, four first through holes 252 are described as one set, but one or more first through holes 252 may be provided in the high flow resistance region 232. The opening area density of the high flow resistance region 232 may be smaller than the opening area density of the low flow resistance region 234 so that the flow resistance of the high flow resistance region 232 is larger than that of the low flow resistance region 234. For example, the first through holes 252 in a set of two may be arranged at a predetermined pitch, the first through holes 252 in a set of three may be arranged at the apex of an equilateral triangle, and the first through holes 252 in a set of five may be arranged at the apex of a regular pentagon, to obtain the same effect. The arrangement of the first through holes 252 may be such that it is possible to suppress bias in the pressure distribution in the chamber 12 near the lower surface of the straightening plate 222.

[0068] In the present embodiment, the first through hole 252 and the second through hole 254 are described as being circular through holes. The first through hole 252 and the second through hole 254 may be polygonal, such as triangular or rectangular. The second through hole 254 may be formed as a long hole in which a plurality of holes are connected. The second through hole 254 may be formed as a single continuous hole that surrounds a part or all of the periphery of the plurality of first through holes 252.

[0069] (First Modification) A first modified example of the second embodiment will be described with reference to FIGS.

[0070] Fig. 21 shows a schematic top view of a current plate 322 according to this modification. The nozzles 24 are not shown in Fig. 21. The current plate 322 according to this modification is different from the current plate 222 described in the second embodiment in the arrangement and number of the first through holes 252 and the second through holes 254. The pitch of the through holes 252, 254 is 10 mm in the current plate 322 according to this modification.

[0071] As shown in FIG. 21, the first through holes 252 in the first zone Z1 are arranged in pairs. In this case, the first through holes 252 are located at one end and the other end of a line segment having a length corresponding to the constant pitch. The first through holes 252 in the second zone Z2 are arranged in pairs. In this case, the first through holes 252 are located at the vertices of a right-angled isosceles triangle having two line segments having a length corresponding to the constant pitch. The first through holes 252 in the third zone Z3 are arranged in pairs. In this case, the first through holes 252 are located at the vertices of a square formed by line segments having a length corresponding to the constant pitch.

[0072] The nozzle 24 is disposed with respect to the straightening plate 322 in the same positional relationship as the first through hole 252 of the straightening plate 222 of the second embodiment. That is, the nozzle 24 faces the first through hole 252 of the high flow path resistance region 232 having a nozzle facing region facing the nozzle 24 in each of the zones Z1, Z2, and Z3. When the gas for film formation is sprayed from the nozzle 24 toward the straightening plate 322, a part of the gas is introduced into the chamber 12 through the first through hole 252 on the inside of the spray pattern formed by the gas. The remaining gas abuts against the upper surface of the straightening plate 322 and spreads along the upper surface of the straightening plate 322. Since the second through hole 254 is formed outside the spray pattern of the gas sprayed from the nozzle 24, a part of the gas is introduced into the chamber 12 through the second through hole 254.

[0073] When gas is introduced into the chamber 12 through the rectifying plate 322, the pressure distribution in the chamber 12 near the lower surface of the rectifying plate 322 changes. The relationship in the size of the diameters of the first through-hole 252 and the second through-hole 254 is the same as that of the rectifying plate 222 described in the second embodiment. Therefore, the rectifying plate 322 can balance the flow rate of gas that directly enters the chamber 12 through the first through-hole 252 and the flow rate of gas that enters the chamber through the second through-hole 254. In addition, since the through-holes 252 and 254 are arranged at a constant pitch, it is possible to suppress bias in the pressure distribution in the chamber 12 near the lower surface of the rectifying plate 222.

[0074] By attaching the current plate 322 according to this embodiment to the chamber 12, it is possible to suppress agitation and backflow of gas in the chamber 12, and to easily control the gas flow in the chamber 12. In addition, since the gas flow in the chamber 12 can be controlled for each of the zones Z1, Z2, and Z3, for example, the film formation rate can be controlled according to the distance from the center of the substrate 8.

[0075] Therefore, according to this modified example, it is possible to provide a straightening plate 322 capable of suppressing fluctuations in the film formation rate on the film formation target, for example before and after replacing the straightening plate 322 due to maintenance, a fluid introduction device 14 having the straightening plate 322, and a film formation apparatus 10 having the fluid introduction device 14.

[0076] 22 shows the relationship between the film formation rate distribution on the substrate 8 when the current plate 322 according to this modification is attached to the chamber 12 shifted by 1.5 mm from the central axis of the current plate 322 in the +X-axis direction toward the three central axes of the purge gas flow passage 246 and when the current plate 322 is attached to the chamber 12 shifted by 1.5 mm in the -X-axis direction on the opposite side to the three central axes of the purge gas flow passage 246 from the central axis of the current plate 322. Note that 1.5 mm here is larger than 0.3 mm, which is the allowable error with respect to the reference position when attaching the current plate 322 to the chamber 12.

[0077] 23, the difference in the film formation speed at each point from the center of the substrate 8 (including the center) to the edge of the substrate 8 was divided by the average film formation speed (X+1.5 mm), the sum was added for 16 points from the center to the edge, and the result was divided by 16, multiplied by 100, and expressed as a percentage. This is the difference in the film formation speed from the center of the substrate 8 to the edge.

[0078] When the current plate 222 according to the second embodiment is attached to the chamber 12 and used, the difference in the film formation rate from the center of the substrate 8 to the edge of the substrate 8 is calculated to be 4.6% using the data shown in FIG. 20. When the current plate 322 according to this modification is attached to the chamber 12 and used, the difference in the film formation rate from the center of the substrate 8 to the edge of the substrate 8 is calculated to be 31.1% using the data shown in FIG. 22. Therefore, it can be said that it is preferable that the number of the first through holes 252 is the same in each of the zones Z1, Z2, and Z3. By making the number of the first through holes 252 the same in each of the zones Z1, Z2, and Z3 as in the current plate 222 according to the second embodiment, the difference in the film formation rate from the center of the substrate 8 to the edge of the substrate 8 can be made smaller than the case of using the current plate 322 described in this modification.

[0079] (Second Modification) A second modified example of the second embodiment will be described with reference to FIGS.

[0080] FIG. 24 shows a schematic top view of the straightening plate 422 according to this modification. In FIG. 24, the nozzle 24 is omitted. In each of the zones Z1, Z2, and Z3, the nozzle 24 faces the first through hole 252 of the high flow path resistance region 232 having a nozzle facing region facing the nozzle 24. The diameter of the first through hole 252 of the straightening plate 422 according to this modification is 3 mm, which is smaller than the diameter of the first through hole 252 of the straightening plate 222 according to the second embodiment, which is 5 mm. The diameter of the second through hole 254 of the straightening plate 422 is 7 mm, which is the same as that of the straightening plate 222 according to the second embodiment. The constant pitch of the through holes 252, 254 of the straightening plate 422 is 8 mm, which is the same as that of the straightening plate 222 according to the second embodiment.

[0081] With the current plate 422 according to this modification attached at an appropriate position in the chamber 12, the gas flow at a position 100 mm directly below the current plate 422 was analyzed.

[0082] FIG. 25 shows a schematic cross section of the cylindrical chamber 12 at a position 100 mm directly below the current plate 422 in the chamber 12 between the current plate 422 and the rotating stage 18. FIG. 25 also shows a simulation result capturing the upward (+Z direction) movement of gas at a position 100 mm directly below the current plate 422 in the chamber 12. For this reason, FIG. 25 is a contour map showing that no upward gas current is generated in the chamber 12 at a position 100 mm directly below the current plate 422 when a film is formed on the substrate 8 with the current plate 422 according to this modification attached at the reference position of the chamber 12. In FIG. 25, the downward movement of gas is not shown. In FIG. 25, the velocity distribution accompanying the upward movement of gas is shown as a relative velocity when the minimum velocity is set to 1.0. As shown in FIG. 25, it was not confirmed that the gas moves upward in the entire area region at a position 100 mm directly below the current plate 422 in the chamber 12. Depending on the gas flow rate from the nozzle 24, the purge gas flow rate, etc., under certain conditions, when the baffle plate 422 of this modified example is attached to the chamber 12 and used, it can be confirmed that gas does not rise in the area below the baffle plate 422.

[0083] Here, for comparison with the straightening plate 422 of this modified example, the gas flow was analyzed at a position 100 mm directly below the straightening plate 222 of the second embodiment with the straightening plate 222 attached at an appropriate position in the chamber 12.

[0084] Fig. 26 shows a schematic cross section of the cylindrical chamber 12 at a position 100 mm directly below the current plate 222 in the chamber 12, between the current plate 222 and the rotating stage 18. Fig. 26 shows a simulation result capturing the upward (+Z direction) movement of gas at a position 100 mm directly below the current plate 222 in the chamber 12. For this reason, Fig. 26 is a contour map showing the upward gas current in the chamber 12 at a position 100 mm directly below the current plate 222 when a film is formed on the substrate 8 with the current plate 222 shown in Fig. 15 according to the second embodiment attached at the reference position of the chamber 12.

[0085] Downward movement of gas is not shown in Fig. 26. Also, in Fig. 26, the velocity distribution accompanying the upward movement of gas is shown as a relative velocity when the minimum velocity is set to 1.0. As shown in Fig. 26, it can be confirmed that gas moves upward in an area of ​​21% of the total area at a position in the chamber 12 directly below the straightening plate 222 and 100 mm therebelow. Although it depends on the gas flow rate from the nozzle 24, the flow rate of the purge gas, etc., it can be confirmed that gas rises in the area in the chamber 12 below the straightening plate 222 when the straightening plate 222 according to the second embodiment is attached to the chamber 12 under certain conditions.

[0086] In addition, for comparison with the straightening plate 422 according to this modification and the straightening plate 222 according to the second embodiment, a straightening plate 522 shown in FIG. 27 was used as a comparative example. FIG. 27 shows a schematic top view of the straightening plate 522 according to the comparative example. In FIG. 27, the nozzle 24 is omitted. In each of the zones Z1, Z2, and Z3, the nozzle 24 faces the first through-hole 552 of the high flow path resistance region 232 including the nozzle facing region facing the nozzle 24. The first through-hole 552 of the straightening plate 522 is arranged in the same manner as the first through-hole 252 of the straightening plate 422 shown in FIG. 24. The second through-hole 254 of the straightening plate 522 is arranged in the same manner as the second through-hole 254 of the straightening plate 422 shown in FIG. 24. The diameter of the first through-hole 552 and the diameter of the second through-hole 254 of the straightening plate 522 according to the comparative example are the same, 7 mm, respectively. The constant pitch of the through holes 552, 254 of the current plate 522 is 8 mm, which is the same as that of the current plate 222 according to the second embodiment.

[0087] With the current plate 522 according to the comparative example attached at an appropriate position in the chamber 12, the gas flow was analyzed at a position 100 mm directly below the current plate 522.

[0088] Fig. 28 shows a simulation result capturing the upward (+Z direction) movement of gas at a position 100 mm directly below the current plate 522 in the chamber 12. For this reason, Fig. 28 is a contour map showing the upward gas current in the chamber 12 at a position 100 mm directly below the current plate 522 when a film is formed on the substrate 8 with the current plate 522 shown in Fig. 27 according to the comparative example attached at the reference position of the chamber 12.

[0089] In Fig. 28, the downward movement of gas is not shown. Also, in Fig. 28, the velocity distribution accompanying the upward movement of gas is shown as a relative velocity when the minimum velocity is set to 1.0. As shown in Fig. 28, it can be confirmed that gas moves upward in an area of ​​31% of the total area at a position in the chamber 12 directly below the straightening plate 522, 100 mm below the straightening plate 522. Although it depends on the gas flow rate from the nozzle 24, the flow rate of the purge gas, etc., it can be confirmed that gas rises in the area below the straightening plate 522 when the straightening plate 522 according to the comparative example is attached to the chamber 12 under certain conditions.

[0090] Therefore, it can be said that the larger the diameter (the larger the opening area) of the first through hole 252 is relative to the second through hole 254, the more easily the gas rises in the region below the straightening vane, and the more likely the gas is unintentionally stirred in the chamber 12. For this reason, it is preferable that the diameter of the first through hole 252 of the straightening vane 422 according to this modification is smaller than 5 mm. It is preferable that the diameter of the first through hole 252 is, for example, within 0.7 times that of the second through hole 254.

[0091] On the other hand, it is considered that reducing the diameter of the first through hole 252 does not provide sufficient effects in terms of gas agitation, suppression of backflow, and control of gas flow. Therefore, the first through hole 252 of the straightening plate 422 according to the modified example is set as a minimum diameter (minimum opening area) that straightens the gas flow in the chamber 12 so as to prevent gas backflow at a predetermined position in the chamber 12. At this time, the minimum diameter of the diameter of the first through hole 252 depends on the flow rate of the gas and purge gas ejected from the nozzle 24, and is set so as to prevent gas backflow. Alternatively, the minimum diameter (minimum opening area) may be set so as to suppress changes in gas flow caused by the first through hole 252 being blocked over time and the flow resistance fluctuating.

[0092] Therefore, by appropriately setting the diameter of the first through hole 252 relative to the second through hole 254 of the straightening plate 422 in this modified example, when the straightening plate 422 is attached to the chamber 12, it is possible to suppress gas agitation and backflow within the chamber 12 and control the film formation rate according to the distance from the center of the substrate 8.

[0093] In this way, the relationship between the second through hole 254 and the first through hole 252 is preferably such that the hole diameter does not cause a backflow toward the lower surface of the straightening plate 422 due to the gas flowing downward through the first through hole 252. For example, although it depends on various conditions such as the flow rate per unit time from the nozzle 24, when the gap between the straightening plate 422 and the nozzle 24 is 2.5 mm, the first through holes 252 and the second through holes 254 of the straightening plate 422 are arranged at a constant pitch of 8 mm, the diameter of the second through hole 254 is 7 mm, and the diameter of the first through hole 252 is 3 mm which is smaller than 0.7 times the diameter of the second through hole 254, when gas is ejected from the nozzle 24 and hydrogen gas is ejected from the purge gas nozzle, the occurrence of a backflow of gas is suppressed in the chamber 12.

[0094] Even if the position of the current plate 422 is shifted with respect to the chamber 12, the deviation in the film formation rate distribution can be suppressed.

[0095] According to this modified example, it is possible to provide a straightening plate 422 capable of suppressing fluctuations in the film formation rate on the film formation target, for example before and after replacing the straightening plate 422 for maintenance, a fluid introduction device 14 having the straightening plate 422, and a film formation apparatus 10 having the fluid introduction device 14.

[0096] According to at least one of the embodiments described above, it is possible to provide a straightening plate capable of suppressing fluctuations in the film formation rate on a film formation target, for example before and after replacing the straightening plate for maintenance, a fluid introduction device having the straightening plate, and a film formation apparatus having the fluid introduction device.

[0097] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0098] 8...substrate, 10...film formation device, 12...chamber, 14...fluid introduction device, 16...exhaust section, 18...rotating stage, 22...baffle plate, 24...nozzle, 26...cover, 28...space, 32...blocking section, 34...through hole, 36...nozzle facing area.

Claims

1. A flow straightening plate that is provided opposite a plurality of nozzles that eject a fluid and straightens the flow of the fluid, a plurality of high flow path resistance regions each having a nozzle facing region facing each of the plurality of nozzles; a low flow resistance region surrounding each of the plurality of high flow resistance regions, in which a plurality of first through holes are formed, and in which the flow resistance is smaller than that of the high flow resistance region; the plurality of nozzles include a pyrometer nozzle through which a purge gas is introduced, and the baffle plate further includes a purge gas flow path that is provided opposite the pyrometer nozzle, through which the purge gas passes, and has an opening area larger than that of the plurality of first through holes; rectifier plate.

2. 2. The flow straightening plate according to claim 1, wherein the high flow resistance area is closed.

3. 2 . The flow straightening plate according to claim 1 , wherein one or more second through holes having an opening area smaller than that of the first through holes are formed in the high flow resistance region.

4. 4. The flow straightening plate according to claim 3, wherein the opening area density of the high flow resistance region is smaller than the opening area density of the low flow resistance region.

5. The flow straightening plate according to claim 3 , wherein the number of the second through holes in each of the high flow path resistance regions is the same.

6. The current plate according to claim 1 , wherein the plurality of first through holes are formed at a predetermined pitch in the current plate.

7. The flow plate is disk-shaped, A straightening plate as described in any one of claims 1 to 6, wherein the plurality of first through holes are formed at positions that are point symmetric with respect to the center of the straightening plate, or line symmetric with respect to a predetermined axis passing through the center of the straightening plate.

8. The current plate according to any one of claims 1 to 7, a plurality of the nozzles arranged to face the plurality of nozzle facing regions of the flow straightening plate; A fluid introduction device comprising:

9. The fluid introduction device according to claim 8 ; a chamber into which the fluid is introduced from the fluid introduction device; The film forming apparatus includes:

Images