SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Abstract

The present invention relates to a substrate processing method and substrate processing apparatus that can improve the thickness uniformity of thin films deposited in multiple chambers by supplying gases to multiple chambers through a single gas supply unit and supplying different gases to each chamber at the same time.The substrate processing method and substrate processing apparatus according to the present invention can deposit thin films with uniform thickness in each process chamber and improve gas supply efficiency by supplying gas to only one chamber at the same time to perform a process in only one chamber, or by supplying different gases to each chamber to perform a different process in each chamber.

Description

[Technical field]

[0001] The present invention relates to a substrate processing method and a substrate processing apparatus, and more particularly to a substrate processing method and a substrate processing apparatus that supply gases to a plurality of process chambers through a single gas supply system and supply different gases at the same time to improve thickness uniformity of thin films deposited in the plurality of chambers. [Background technology]

[0002] Generally, manufacturing a semiconductor device involves a thin film deposition process in which source materials are deposited on a silicon wafer, a photolithography process in which selected areas of the thin film are exposed or concealed using a photosensitive material, and an etching process in which selected areas of the thin film are removed and patterned as desired. Each of these processes is carried out inside a chamber designed to provide the optimum environment for that process.

[0003] There are various types of thin film deposition equipment for forming a desired thin film on a silicon wafer, such as CVD (Chemical Vapor Deposition) and ALD (Atomic Layer Deposition), and they are used in various fields of semiconductor manufacturing.

[0004] Among these, ALD thin film deposition equipment is attracting attention as an essential deposition technology in the manufacture of nano-class semiconductor devices because it is capable of depositing thin films of nano thickness with excellent uniformity. In particular, ALD thin film deposition equipment can precisely control the thickness of thin films in units of a few angstroms. Therefore, ALD thin film deposition equipment has the advantages of being able to deposit even complex three-dimensional structures uniformly with excellent step coverage, being able to precisely adjust the thickness and composition of thin films, and being able to deposit large areas at a uniform speed.

[0005] Meanwhile, in recent years, cluster-type substrate processing apparatuses in which multiple process modules, transfer modules for transferring substrates, and load-lock modules are closely coupled to each other have been used to increase productivity. Also, to improve the productivity of existing ALD apparatuses, multi-chamber type substrate processing apparatuses that process multiple substrates simultaneously have been used.

[0006] FIG. 1 shows a conventional multi-chamber substrate processing apparatus. 100 1 is a plan view showing a schematic configuration of the casing 100, in which a plurality of process modules 121, 122, 123 and a load lock module 130 are coupled around a transfer module 110.

[0007] The transfer module 110 transfers the substrate S The transfer robot 111 moves the substrate s between a plurality of process modules 121, 122, 123 and a load lock module 130. The transfer module 110 is always maintained in a vacuum state except when necessary for setting or maintenance and repair.

[0008] The process modules 121, 122, and 123 are areas where actual processes such as thin film deposition and etching are carried out on a substrate s in one or more process chambers 121a, 121b, 122a, 122b, 123a, and 123b, respectively.

[0009] The load lock module 130 is a buffer space where the substrate s temporarily stays when the substrate s is loaded into or unloaded from one of the multiple process modules 121, 122, and 123, which are in a vacuum state inside. In consideration of productivity, a structure in which two chambers are stacked one on top of the other is usually used.

[0010] Therefore, such a load lock module 130 is switched to a vacuum state when the substrate s is loaded into the process modules 121, 122, and 123 from the outside, and is switched to an atmospheric pressure state when the substrate s is unloaded from the process modules 121, 122, and 123 to the outside.

[0011] FIG. 2 is a side cross-sectional view that shows a schematic configuration of a conventional multi-chamber substrate processing apparatus.

[0012] Referring to FIG. 2, the multi-chamber substrate processing apparatus 200 includes a first process chamber 210 and a second process chamber 220. The first process chamber 210 is provided with a first substrate mounting portion 210a on which a first substrate S1 is mounted and a first shower head 210b from which a process gas is injected. The second process chamber 220 is provided with a second substrate mounting portion 220a on which a second substrate S2 is mounted and a second shower head 220b from which a process gas is injected.

[0013] A first process gas supply line 211 through which a process gas is supplied from a gas supply unit 230 is connected to the first process chamber 210, and the first process gas supply line 211 is opened and closed by a first valve 212. A second process gas supply line 221 through which a process gas is supplied from the gas supply unit 230 is connected to the second process chamber 220, and the second process gas supply line 221 is opened and closed by a second valve 222.

[0014] For convenience of explanation, in FIG. 2, the first process gas supply line 211 and the second process gas supply line 221 are shown as one line, and the first valve 212 and the second valve 222 are also shown as one valve.

[0015] However, the first process gas supply line 211 is a source gas supply line. hmm, Source purge gas supply line hmm, Reactant gas supply line N and reaction purge gas supply line N The second process gas supply line 221 is composed of four lines. hmm, Source purge gas supply line hmm, Reactant gas supply line N and reaction purge gas supply line N It consists of four lines.

[0016] The first valve 212 is a source gas supply line valve. B, Source purge gas supply line B, Reactant gas supply line Buo and reaction purge gas supply line B's The second valve 222 is a valve for supplying source gas to the source gas supply line. B, Source purge gas supply line B, Reactant gas supply line Buo and reaction purge gas supply line B's It consists of four valves.

[0017] The first valve 212 and the second valve 222 are controlled to be opened and closed simultaneously, so that thin films are deposited in the first process chamber 210 and the second process chamber 220 under the same processing conditions.

[0018] FIG. 3 is a timing chart for explaining the flow of a deposition process in a conventional multi-chamber substrate processing apparatus.

[0019] As shown in FIG. 3, in a conventional multi-chamber substrate processing apparatus, the first and second valves are controlled to be turned on and off in the same manner so that thin films are deposited under the same processing conditions in the first process chamber 210 and the second process chamber 220, respectively.

[0020] That is, a gas supply line from one gas supply unit 230 branches into a first process gas supply line 211 and a second process gas supply line 221, and process gases are supplied to the first process chamber 210 and the second process chamber 220. In this case, the same gas is supplied to the first process chamber 210 and the second process chamber 220 at the same time, and the same thin film is deposited on the first substrate S1 and the second substrate S2.

[0021] However, even if the first and second valves are controlled to be turned on and off in the same way, differences in the times when the first and second valves are actually opened and closed may occur due to hardware issues, or differences may occur in the speed and flow of the process gas supplied from the first process gas supply line 211 and the second process gas supply line 221.

[0022] If such a difference occurs, a problem occurs in which a thickness deviation occurs between the first thin film deposited on the first substrate S1 in the first process chamber 210 and the second thin film deposited on the second substrate S2 in the second process chamber 220. Summary of the Invention [Problem to be solved by the invention]

[0023] The present invention provides a substrate processing method and a substrate processing apparatus having a plurality of process chambers, in which the configurations of a gas supply unit, a process gas supply line, and a process gas supply line valve are maintained the same, and different gases are supplied to each process chamber at the same time to perform different processes, thereby improving the uniformity of the thickness of a thin film deposited in each process chamber. [Means for solving the problem]

[0024] According to one embodiment of the present invention, there is provided a substrate processing method for a substrate processing apparatus including a gas supply unit for supplying a process gas, a first gas line for supplying the process gas to a first chamber having a first substrate placed therein, a second gas line for supplying the process gas to a second chamber having a second substrate placed therein, a third gas line for supplying the process gas supplied from the gas supply unit to the first gas line and the second gas line, respectively, and a controller for controlling each of the gas lines, the method being characterized in that the process gas supplied from the gas supply unit is controlled to be supplied to only one of the first gas line and the second gas line via the third gas line, and the first substrate and the second substrate are processed with the process gas, respectively.

[0025] According to another embodiment of the present invention, there is provided a substrate processing method using a substrate processing apparatus including a gas supply unit for supplying a process gas, a first gas line for supplying the process gas to a first chamber, a first valve for opening and closing the first gas line, a second gas line for supplying the process gas to a second chamber, a second valve for opening and closing the second gas line, and a third gas line for supplying the process gas supplied from the gas supply unit to the first gas line and the second gas line, respectively, wherein the process gas supplied from the gas supply unit is supplied to the first gas line and the second gas line via the third gas line, and the supply of the process gas is controlled by operation of the first valve and the second valve.

[0026] According to one embodiment of the present invention, a substrate processing apparatus includes a gas supply unit for supplying a process gas, a first gas line for supplying the process gas to a first chamber having a first substrate placed therein, a second gas line for supplying the process gas to a second chamber having a second substrate placed therein, a third gas line for supplying the process gas supplied from the gas supply unit to the first gas line and the second gas line, respectively, and a control unit for controlling the first gas line, the second gas line, and the third gas line, wherein the process gas supplied from the gas supply unit is supplied to only one of the first gas line and the second gas line via the third gas line. Effect of the Invention

[0027] According to the substrate processing method and substrate processing apparatus of the present invention, in a substrate processing apparatus having a plurality of chambers, gas is supplied to gas lines for the plurality of chambers through a common gas supply unit and flow rate regulator, and the gas is sequentially supplied to each chamber so that different processes are performed in each chamber. This makes it possible to deposit thin films of uniform thickness in each chamber, and improves gas supply efficiency. [Brief description of the drawings]

[0028] [Figure 1] FIG. 1 is a plan view illustrating a schematic configuration of a conventional multi-chamber substrate processing apparatus. [Diagram 2] 1 is a side cross-sectional view illustrating a schematic configuration of a conventional multi-chamber substrate processing apparatus. [Diagram 3] 1 is a timing diagram illustrating a flow of a deposition process in a conventional multi-chamber substrate processing apparatus. [Figure 4] 1 is a side cross-sectional view illustrating a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention. [Diagram 5] 13 is a side cross-sectional view illustrating a schematic configuration of a substrate processing apparatus according to another embodiment of the present invention. [Figure 6] 2 is a timing diagram illustrating a flow of a substrate processing method according to an embodiment of the present invention. [Figure 7] 6 is a timing diagram illustrating a flow of a substrate processing method according to another embodiment of the present invention. [Figure 8] 11A to 11D are diagrams for explaining an embodiment of a substrate processing method according to another embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0029] Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. Terms used in this specification and claims should not be construed as being limited to their ordinary or dictionary meanings, but should be construed as having meanings and concepts consistent with the technical subject matter of the present invention.

[0030] The embodiments described in this specification and the configurations shown in the drawings are preferred embodiments of the present invention and do not represent all of the technical ideas of the present invention, and therefore there may be various equivalents and modifications that can replace them at the time of this application.

[0031] FIG. 4 is a side cross-sectional view illustrating a schematic configuration of a substrate processing apparatus according to one embodiment of the present invention, and FIG. 5 is a side cross-sectional view illustrating a schematic configuration of a substrate processing apparatus according to another embodiment of the present invention.

[0032] 4, a substrate processing apparatus 400 according to an embodiment of the present invention includes a gas supply unit 430 for supplying a process gas, a first gas line 411 for supplying the process gas to a first chamber 410, a first valve 412 for opening and closing the first gas line 411, a second gas line 421 for supplying the process gas to a second chamber 420, a second valve 422 for opening and closing the second gas line 421, a third gas line 431 for supplying the process gas supplied from the gas supply unit 430 to only one of the first gas line 411 and the second gas line 421, and a control unit 480 for controlling the first gas line 411, the second gas line 421, and the third gas line 431.

[0033] In addition, the process gas supplied from the gas supply unit 430 is supplied to only one of the first gas line 411 and the second gas line 421 via the third gas line 431, and the control unit 480 controls the operation of the first valve 412 and the second valve 422 to supply the process gas to one of the gas lines.

[0034] A substrate processing apparatus 400 according to one embodiment of the present invention includes a first chamber 410 and a second chamber 420. The first chamber 410 is provided with a first substrate mounting portion 410a on which a first substrate S1 is mounted and a first shower head 410b from which a process gas is injected. The second chamber 420 is provided with a second substrate mounting portion 420a on which a second substrate S2 is mounted and a second shower head 420b from which a process gas is injected.

[0035] A first gas line 411 through which a process gas is supplied from a gas supply unit 430 is connected to the first chamber 410, and the first gas line 411 is opened and closed by a first valve 412. A second gas line 421 through which a process gas is supplied from the gas supply unit 430 is connected to the second chamber 420, and the second gas line 421 is opened and closed by a second valve 422.

[0036] The substrate processing apparatus 400 according to the present invention includes a common flow rate controller 440 for controlling the flow rate of gas supplied from a gas supply unit 430 to one of the first gas line 411 and the second gas line 421 through the third gas line 431. The gas supplied from the gas supply unit 430 is transferred to the first chamber 410 and the second chamber 420 through the first gas line 411 and the second gas line 421, respectively, so that a first thin film is formed on the first substrate S1 and a second thin film is formed on the second substrate S2.

[0037] Meanwhile, the substrate processing apparatus 400 according to the present invention may further include a gas storage space 450 installed in the third gas line 431 to store the process gas supplied from the gas supply unit 430 and supply it to the first gas line 411 or the second gas line 421.

[0038] In addition, the substrate processing apparatus 400 according to the present invention may further include a third valve 432 installed in the third gas line 431 to supply or block the process gas from the gas supply unit 430 to the first gas line 411 or the second gas line 421.

[0039] For convenience of explanation, in FIG. 4, the first gas line 411 and the second gas line 421 are shown as one line, and the first valve 412 and the second valve 422 are shown as one valve.

[0040] However, the first gas lines 411 are each composed of four lines, namely, a source gas supply line, a source purge gas supply line, a reactive gas supply line, and a reactive purge gas supply line, and the second gas lines 421 are each composed of four lines, namely, a source gas supply line, a source purge gas supply line, a reactive gas supply line, and a reactive purge gas supply line.

[0041] The first valve 412 is composed of four valves, namely, a source gas supply line valve, a source purge gas supply line valve, a reactive gas supply line valve, and a reactive purge gas supply line valve, and the second valve 422 is composed of four valves, namely, a source gas supply line valve, a source purge gas supply line valve, a reactive gas supply line valve, and a reactive purge gas supply line valve.

[0042] A first exhaust line 461a and a first exhaust valve 461b are formed at the lower end of the first chamber 410, and a second exhaust line 462a and a second exhaust valve 462b are formed at the lower end of the second chamber 420, and the first exhaust line 461a and the second exhaust line 462a are connected to a common exhaust pump 470.

[0043] The substrate processing apparatus 400 according to the present invention includes the first chamber 410 During a first step of depositing a first thin film on the first substrate S1, a source gas, a source purge gas, a reaction gas, and a reaction purge gas are sequentially supplied to the second chamber. 420 The process gas is not supplied to the

[0044] On the other hand, the second chamber 420 During a second step of depositing a second thin film on the second substrate S2, a source gas, a source purge gas, a reaction gas, and a reaction purge gas are sequentially supplied to the first chamber. 410 The process gas is not supplied to the

[0045] The substrate processing apparatus 500 according to another embodiment of the present invention shown in FIG. 5 has all other configurations the same as those in FIG. 4, but differs in that the first exhaust line 561a and first exhaust valve 561b formed at the lower end of the first chamber 510 are connected to a first exhaust pump 571, and the second exhaust line 562a and second exhaust valve 562b formed at the lower end of the second chamber 520 are connected to a separate second exhaust pump 572.

[0046] 5, a substrate processing apparatus 500 according to another embodiment of the present invention includes a gas supply unit 530 for supplying a process gas, a first gas line 511 for supplying the process gas to a first chamber 510, a first valve 512 for opening and closing the first gas line 511, a second gas line 521 for supplying the process gas to a second chamber 520, a second valve 522 for opening and closing the second gas line 521, a third gas line 531 for supplying the process gas supplied from the gas supply unit 530 to the first gas line 511 and the second gas line 521, a third valve 532 for opening and closing the third gas line 531, and a control unit 580 for controlling the first gas line 511, the second gas line 521, and the third gas line 531.

[0047] A substrate processing apparatus 500 according to one embodiment of the present invention includes a first chamber 510 and a second chamber 520. The first chamber 510 is provided with a first substrate mounting portion 510a on which a first substrate S1 is mounted and a first shower head 510b from which a process gas is injected. The second chamber 520 is provided with a second substrate mounting portion 520a on which a second substrate S2 is mounted and a second shower head 520b from which a process gas is injected.

[0048] In addition, the substrate processing apparatus 500 according to the present invention includes a common flow rate controller 540 for controlling the flow rate of gas supplied from a gas supply unit 530 to the first gas line 511 and the second gas line 521 through the third gas line 531.

[0049] Meanwhile, the substrate processing apparatus 500 according to the present invention may further include a gas storage space 550 installed in the third gas line 531 to store the process gas supplied from the gas supply unit 530 and supply it to the first gas line 511 or the second gas line 521. In the case of the substrate processing apparatus 500 according to Fig. 5, during a first step in which a source gas, a source purge gas, a reaction gas and a reaction purge gas are sequentially supplied to the first chamber 510 to deposit a first thin film on the first substrate S1, the reaction gas, the reaction purge gas, the source gas and the source purge gas are sequentially supplied to the second process chamber 520 to deposit a second thin film on the second substrate S2.

[0050] The substrate processing apparatus 500 shown in FIG. 5 has an advantage over the substrate processing apparatus 400 shown in FIG. 4 in that the process time can be shortened.

[0051] FIG. 6 is a timing chart for explaining the flow of a substrate processing method according to an embodiment of the present invention.

[0052] Referring to FIG. 6, a substrate processing method according to an embodiment of the present invention includes a first step S610 and a second step S620.

[0053] According to one embodiment of the present invention, there is provided a substrate processing method for a substrate processing apparatus including a gas supply unit for supplying a process gas, a first gas line for supplying the process gas to a first chamber having a first substrate placed therein, a second gas line for supplying the process gas to a second chamber having a second substrate placed therein, a third gas line for supplying the process gas supplied from the gas supply unit to the first gas line and the second gas line, respectively, and a controller for controlling each of the gas lines, the method being characterized in that the process gas supplied from the gas supply unit is controlled to be supplied to only one of the first gas line and the second gas line via the third gas line, and the first substrate and the second substrate are processed with the process gas, respectively.

[0054] In the first step S610, a process gas is supplied to the first chamber and a process gas is not supplied to the second chamber. The first step S610 sequentially repeats a first source process S_1 of injecting a source gas into the first chamber, a first source purge process SP_1 of injecting a source purge gas, a first reaction process R_1 of injecting a reaction gas, and a first reaction purge process RP_1 of injecting a reaction purge gas to form the first thin film on the first substrate S1.

[0055] In the second step S620, a process gas is supplied to the second chamber, and no process gas is supplied to the first chamber. The second step S620 includes a second source process S_2 for injecting a source gas into the second chamber, a second source purge process SP_2 for injecting a source purge gas, a second reaction process R_2 for injecting a reaction gas, and a second reaction purge process RP_2 for injecting a reaction purge gas, which are sequentially repeated to prepare the second substrate. S2 The second thin film is formed on the substrate.

[0056] The first step S610 and the second step S620 are performed sequentially. At this time, the first step S610 and the second step S620 are configured as one cycle, and the first substrate S1 and the second substrate S2 are sequentially formed by repeating the cycle. S2 The first thin film and the second thin film are formed on the substrate, respectively.

[0057] Meanwhile, in the first step S610, the process gas is not supplied to the second chamber, so that no thin film deposition is performed, and in the second step S620, the process gas is not supplied to the first chamber, so that no thin film deposition is performed.

[0058] FIG. 7 is a timing chart illustrating the flow of a substrate processing method according to another embodiment of the present invention.

[0059] Referring to FIG. 7, a method for processing a substrate according to an embodiment of the present invention includes a first step S710 and a second step S720.

[0060] According to one embodiment of the present invention, there is provided a substrate processing method using a substrate processing apparatus including a gas supply unit for supplying a process gas, a first gas line for supplying the process gas to a first chamber, a first valve for opening and closing the first gas line, a second gas line for supplying the process gas to a second chamber, a second valve for opening and closing the second gas line, and a third gas line for supplying the process gas supplied from the gas supply unit to the first gas line and the second gas line, respectively, wherein the process gas supplied from the gas supply unit is supplied to the first gas line and the second gas line via the third gas line, and the supply of the process gas is controlled by operation of the first valve and the second valve.

[0061] In the first step S710, a first source process S_1 of injecting a source gas into the first chamber and a first source purge process SP_1 of injecting a source purge gas are performed, and a first reaction process R_1 of injecting a reaction gas into the second chamber and a first reaction purge process RP_1 of injecting a reaction purge gas are performed.

[0062] In the second step S720, a second reaction process R_2 of injecting a reaction gas into the first chamber and a second reaction purge process RP_2 of injecting a reaction purge gas are performed, and a second source process S_2 of injecting a source gas into the second chamber and a second source purge process SP_2 of injecting a source purge gas are performed.

[0063] In one embodiment of the substrate processing method of the present invention, a cycle is defined as a cycle in which the first step S710 is performed and then the second step S720 is performed, and the cycle is repeated to deposit thin films on the first substrate S1 and the second substrate S2, respectively.

[0064] In the first step S710, the first source step S_1 and the first reaction step R_1 are carried out simultaneously, and in the second step S720, the second reaction step R_2 and the second source step S_2 are carried out simultaneously.

[0065] That is, while a source gas is supplied to the first chamber and a first source process S_1 is being performed, a reaction gas is supplied to the second chamber and a first reaction process R_1 is being performed, and while a reaction gas is supplied to the first chamber and a second reaction process R_2 is being performed, a source gas is supplied to the second chamber and a second source process S_2 is being performed.

[0066] In this manner, thin film deposition can be performed in both the first chamber and the second chamber within one cycle, which is advantageous in that the overall time required for the thin film deposition process can be reduced.

[0067] FIG. 8 is a diagram for explaining an embodiment of the substrate processing method according to the embodiment of the present invention shown in FIG.

[0068] Referring to FIG. 8, the entire process time of the first step S610 is the same as the entire process time of the second step S620. 610 It is understood that the time of each step constituting the second step S620 can be varied.

[0069] That is, the times at which the first source process S_1, the first source purge process SP_1, the first reaction process R_1, and the first reaction purge process RP_1 in the first step S610 are performed, and the times at which the second reaction process R_2, the second reaction purge process RP_2, the second source process S_2, and the second source purge process SP_2 in the second step S620 are performed can each be varied.

[0070] This means that if the thickness of the first thin film formed on the first substrate S1 in the first step S610 and the second thin film formed on the second substrate S2 in the second step S620 is not uniform, the thickness uniformity of the thin films can be improved by adjusting the detailed process times of the first step S610 and the second step S620.

[0071] FIG. 8(a) shows a process in which the substrate processing method according to the present invention is performed in a normal state.

[0072] As shown in FIG. 8(a), according to the substrate processing method of the present invention, by setting the time for performing the first source process S_1, the first source purge process SP_1, the first reaction process R_1, and the first reaction purge process RP_1 in the first step S610 and the time for performing the second reaction process R_2, the second reaction purge process RP_2, the second source process S_2, and the second source purge process SP_2 in the second step S620 to the same time, for example, 0.4 seconds, a thin film of uniform thickness can be formed on the first substrate S1 and the second substrate S2.

[0073] However, the thickness of the first thin film and the second thin film may differ due to various reasons. If the thickness of the first thin film and the second thin film is not uniform, the thickness uniformity of the thin films can be adjusted by adjusting the detailed process times of the first step S610 and the second step S620.

[0074] As shown in Fig. 8(b), the process time of the first step S610 is maintained at 0.4 sec, and the process time of the second reaction process R_2 is reduced to 0.3 sec and the process time of the second source process S_2 is adjusted to 0.5 sec in the second step S620, thereby adjusting the thickness uniformity of the thin film. At this time, the time during which the second reaction purge process RP_2 and the second source purge process SP_2 are performed is maintained at 0.4 sec, which is the same as the time during which the first source purge process SP_1 and the first reaction purge process RP_1 are performed. Therefore, the time obtained by adding the time during which the first source process S_1 is performed and the time during which the first reaction process R_1 is performed is the same as the time obtained by adding the time during which the second reaction process R_2 is performed and the time during which the second source process S_2 is performed.

[0075] 8(c), the process time of the first step S610 is maintained at 0.4 sec, and the progress time of the second reaction purge process RP_2 is reduced to 0.3 sec and the progress time of the second source purge process SP_2 is adjusted to 0.5 sec in the second step S620 to adjust the thickness uniformity of the thin film. In this case, the time during which the second reaction process R_2 and the second source process S_2 are performed is maintained at 0.4 sec, which is the same as the time during which the first source process S_1 and the first reaction process R_1 are performed. Therefore, the time obtained by adding the time during which the first source purge process SP_1 is performed to the time during which the first reaction purge process RP_1 is performed is the same as the time obtained by adding the time during which the second reaction purge process RP_2 is performed to the time during which the second source purge process SP_2 is performed.

[0076] Meanwhile, as shown in FIG. 8(d), the times at which the first source process S_1, the first source purge process SP_1, the first reaction process R_1, and the first reaction purge process RP_1 in the first step S610 are performed, and the times at which the second reaction process R_2, the second reaction purge process RP_2, the second source process S_2, and the second source purge process SP_2 in the second step S720 are performed can all be changed to adjust the uniformity of the thickness of the thin film.

[0077] At this time, the total time during which the first source process S_1 is performed, the total time during which the first source purge process SP_1 is performed, the total time during which the first reaction process R_1 is performed, and the total time during which the first reaction purge process RP_1 is performed is the same as the total time during which the second reaction process R_2 is performed, the total time during which the second reaction purge process RP_2 is performed, the total time during which the second source process S_2 is performed, and the total time during which the second source purge process SP_2 is performed.

[0078] That is, according to the substrate processing method of the present invention, the thickness uniformity of the thin film can be adjusted by changing the source process and reaction process times while keeping the purge process time the same for each chamber, or by changing the purge process time while keeping the source process and reaction process times the same, or by changing all of the source process, reaction process, and purge process times.

[0079] As described above, according to the substrate processing method of the present invention, in a substrate processing apparatus having a plurality of chambers, gas is supplied to a process gas supply line via a common gas supply unit and a flow rate regulator, and a process is performed in only one chamber by supplying gas to only one of the chambers at the same time, or a different gas is supplied to each chamber to perform a different process in each chamber, thereby depositing a thin film with a uniform thickness in each process chamber and improving gas supply efficiency.

Claims

1. A substrate processing method using a substrate processing apparatus including a gas supply unit for supplying a process gas, a first gas line for supplying the process gas to a first chamber, a first valve for opening and closing the first gas line, a second gas line for supplying the process gas to a second chamber, a second valve for opening and closing the second gas line, and a third gas line for supplying the process gas supplied from the gas supply unit to the first gas line and the second gas line, The process gas supplied from the gas supply unit is supplied to the first gas line and the second gas line through the third gas line, and the supply of the process gas is controlled by operating the first valve and the second valve; The process gas includes one of a source gas and a reaction gas, a first step of supplying a source gas of the process gas to the first chamber and a reaction gas of the process gas to the second chamber; a second step of supplying the reaction gas of the process gas to the first chamber and the source gas of the process gas to the second chamber; The first step and the second step are performed as one cycle, and the cycle is repeatedly performed; The time for one cycle is kept constant, and the supply times of the source gas and the reaction gas are adjusted to be different; the supply start times of the reaction gas and the source gas in the second step are different; A substrate processing method comprising:

2. 2. The substrate processing method according to claim 1, further comprising the step of supplying a purge gas after the first step and the second step.

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