Electrostatic chuck and semiconductor manufacturing equipment

Abstract

To provide an electrostatic chuck and a semiconductor manufacturing apparatus that can improve uniformity of temperature distribution in a plane of a processing object.SOLUTION: A ceramic dielectric substrate includes a base plate and a heater part. The heater part includes first and second heater elements. The second heater element includes a plurality of main zones divided in a radial direction. The first heater element includes a plurality of sub-zones. The number of sub-zones is more than the number of main zones. The main zones include a first main zone and a second main zone that is adjacent to the first main zone through a first border in the radial direction. The sub-zones include a first sub-zone overlapping with at least any one of the first main zone and the second main zone and having a first radial end corresponding to an end in the radial direction. At least a part of the first radial end does not overlap with the first border.SELECTED DRAWING: Figure 11

Description

[Technical field]

[0001] Aspects of the present invention relate generally to electrostatic chucks and semiconductor manufacturing equipment. [Background technology]

[0002] Electrostatic chucks are used in plasma processing chambers where etching, CVD (Chemical Vapor Deposition), sputtering, ion implantation, ashing, etc. are performed as a means for attracting and holding processing objects such as semiconductor wafers and glass substrates. Electrostatic chucks apply electrostatic attraction power to a built-in electrode and attract substrates such as silicon wafers by electrostatic force.

[0003] In recent years, there has been a demand for miniaturization and increased processing speed in IC chips that contain semiconductor elements such as transistors. Accordingly, there is a demand for improved processing accuracy, such as etching, when forming semiconductor elements on a wafer. The processing accuracy of etching indicates whether a pattern with the designed width and depth can be formed by processing the wafer. By improving the processing accuracy of etching, etc., it is possible to miniaturize semiconductor elements and increase the integration density. In other words, by improving the processing accuracy, it becomes possible to miniaturize and increase the speed of chips.

[0004] It is known that the accuracy of processing such as etching depends on the temperature of the wafer during processing. Therefore, in semiconductor manufacturing equipment with an electrostatic chuck, it is required to control the temperature distribution within the wafer during processing in order to make the etching rate uniform. As a method for controlling the temperature distribution within the wafer, a method using an electrostatic chuck with a built-in heater (heating element) is known.

[0005] In particular, in recent years, with the miniaturization of semiconductor elements, there is a demand for faster heating and more precise control of the in-plane temperature distribution, and as a means of achieving this, consideration has been given to making the heater into a two-layer structure consisting of a main heater and a sub-heater (Patent Document 1). [Prior art documents] [Patent documents]

[0006] [Patent Document 1] International Publication No. 2016 / 080502 Summary of the Invention [Problem to be solved by the invention]

[0007] However, simply making the heater have a two-layer structure consisting of a main heater and a sub-heater is not sufficient, and there is a demand for further improvement in the uniformity of the temperature distribution within the wafer surface.

[0008] The present invention has been made based on the recognition of such problems, and has an object to provide an electrostatic chuck and a semiconductor manufacturing apparatus that can improve the uniformity of the temperature distribution within the surface of the object to be processed. [Means for solving the problem]

[0009] A first invention is an electrostatic chuck comprising: a ceramic dielectric substrate having a first main surface on which an object to be processed is placed and a second main surface opposite to the first main surface; a base plate supporting the ceramic dielectric substrate; and a heater section heating the ceramic dielectric substrate, the heater section including a first heater element and a second heater element, the second heater element having a plurality of main zones divided in a radial direction, the first heater element having a plurality of subzones, the number of the plurality of subzones being greater than the number of the plurality of main zones, the plurality of main zones including a first main zone and a second main zone adjacent to the first main zone via a first boundary in the radial direction, the plurality of subzones including a first subzone overlapping with at least one of the first main zone and the second main zone in a Z direction perpendicular to the first main surface and having a first radial end which is an end in the radial direction, and at least a part of the first radial end not overlapping with the first boundary in the Z direction.

[0010] When the first and second heater elements have multiple zones, the temperature of the outer peripheral region of each zone tends to be lower than the temperature of the central region of the zone. In other words, the temperature of the boundary between the subzones of the first heater element and the boundary between the main zones of the second heater element tends to be lower than the other parts. Therefore, for example, when the radial end of the subzone of the first heater element overlaps the radial boundary of the main zone of the second heater element, the temperature of the overlapping part becomes lower than the temperature of the other parts, and the uniformity of the temperature distribution in the surface of the heater part may decrease. In contrast, according to this electrostatic chuck, the uniformity of the temperature distribution in the surface of the heater part can be improved by preventing at least a part of the first radial end of the first subzone from overlapping with the first boundary of the main zone in the Z direction. This can improve the uniformity of the temperature distribution in the surface of the processing object.

[0011] A second invention is an electrostatic chuck according to the first invention, characterized in that the first subzone further has a second radial end located radially inward or outward from the first radial end, and at least a portion of the second radial end does not overlap with the first boundary in the Z direction.

[0012] With this electrostatic chuck, the uniformity of the temperature distribution within the surface of the heater section can be further improved by ensuring that at least a portion of the first radial end and at least a portion of the second radial end of the first subzone do not overlap with the first boundary of the main zone in the Z direction (i.e., by positioning both radial ends of the subzone so as to be offset from the radial boundary of the main zone).

[0013] A third invention is an electrostatic chuck according to the first or second invention, characterized in that the first subzone further has a second radial end located inside or outside the first radial end in the radial direction, and the first subzone, when viewed along the Z direction, has a central region located in the center of the first subzone and an outer circumferential region located outside the central region and including the first radial end and the second radial end, and the first boundary overlaps with the central region in the Z direction.

[0014] According to this electrostatic chuck, the first boundary of the main zone, which is likely to have a lower temperature than other parts when the second heater element is heated, is positioned so as to overlap in the Z direction with the central region of the first subzone, which is likely to have a higher temperature than the peripheral region of the first subzone, thereby further improving the uniformity of the temperature distribution within the surface of the heater section.

[0015] A fourth invention is an electrostatic chuck according to any one of the first to third inventions, characterized in that the first heater element generates a smaller amount of heat than the second heater element.

[0016] According to this electrostatic chuck, the first heater element generates less heat than the second heater element, so that the first heater element can suppress temperature unevenness in the surface of the processing object caused by the pattern of the second heater element, thereby improving the uniformity of the temperature distribution in the surface of the processing object.

[0017] A fifth invention is an electrostatic chuck according to any one of the first to third inventions, characterized in that the first heater element has a higher volume resistivity than the second heater element.

[0018] According to this electrostatic chuck, by making the volume resistivity of the first heater element higher than that of the second heater element, the output of the first heater element can be made lower than the output of the second heater element. This allows the first heater element to suppress temperature unevenness in the surface of the processing object caused by the pattern of the second heater element. Therefore, the uniformity of the temperature distribution in the surface of the processing object can be improved.

[0019] A sixth invention is an electrostatic chuck according to any one of the first to fifth inventions, characterized in that the heater portion is provided between the ceramic dielectric substrate and the base plate.

[0020] A seventh invention is an electrostatic chuck according to any one of the first to fifth inventions, characterized in that the heater portion is provided between the first main surface and the second main surface of the ceramic dielectric substrate.

[0021] These electrostatic chucks can improve the uniformity of the temperature distribution within the surface of the processing object.

[0022] An eighth aspect of the present invention is a semiconductor manufacturing device comprising the electrostatic chuck according to any one of the first to seventh aspects of the present invention. Effect of the Invention

[0023] According to aspects of the present invention, there is provided an electrostatic chuck and a semiconductor manufacturing apparatus capable of improving the uniformity of the temperature distribution within the surface of a processing object. [Brief description of the drawings]

[0024] [Figure 1] FIG. 1 is a perspective view illustrating an electrostatic chuck according to an embodiment. [Diagram 2] 2A and 2B are cross-sectional views that diagrammatically show a portion of the electrostatic chuck according to the embodiment. [Diagram 3] 3A and 3B are cross-sectional views that diagrammatically show a portion of an electrostatic chuck according to a modified example of the embodiment. [Figure 4] FIG. 2 is an exploded perspective view illustrating a heater portion according to the embodiment; [Diagram 5] FIG. 2 is an exploded cross-sectional view illustrating a heater portion according to the embodiment. [Figure 6] FIG. 2 is a plan view illustrating a schematic view of a main zone of a second heater element according to the first embodiment. [Figure 7] FIG. 2 is a plan view that diagrammatically illustrates a subzone of the first heater element according to the first embodiment. [Figure 8] FIG. 2 is a plan view illustrating a schematic view of a part of a main zone of a second heater element according to the first embodiment. [Figure 9] FIG. 2 is a plan view that diagrammatically illustrates a portion of a subzone of a first heater element according to the first embodiment. [Figure 10] FIG. 4 is a plan view illustrating a schematic positional relationship between a main zone of a second heater element and a sub zone of a first heater element according to the first embodiment. [Figure 11] FIG. 4 is a plan view illustrating a schematic positional relationship between a part of a main zone of a second heater element and a part of a sub-zone of a first heater element according to the first embodiment. [Figure 12] FIG. 11 is a plan view illustrating a schematic positional relationship between another part of the main zone of the second heater element and another part of the sub-zone of the first heater element according to the first embodiment. [Figure 13] FIG. 11 is a plan view illustrating a schematic view of a main zone of a second heater element according to a second embodiment. [Figure 14] FIG. 11 is a plan view diagrammatically illustrating a subzone of a first heater element according to a second embodiment. [Figure 15] FIG. 11 is a plan view illustrating a schematic positional relationship between a main zone of a second heater element and a sub zone of a first heater element according to a second embodiment. [Figure 16] FIG. 11 is a plan view illustrating a schematic positional relationship between a part of a main zone of a second heater element and a part of a sub-zone of a first heater element according to a second embodiment. [Figure 17] FIG. 11 is a plan view illustrating a schematic positional relationship between another part of the main zone of the second heater element and another part of the sub-zone of the first heater element according to the second embodiment. [Figure 18] FIG. 11 is a plan view illustrating a schematic positional relationship between a main zone of a second heater element and a sub zone of a first heater element according to a third embodiment. [Figure 19] FIG. 13 is a plan view illustrating a schematic positional relationship between a part of a main zone of a second heater element and a part of a sub-zone of a first heater element according to a third embodiment. [Figure 20] FIG. 13 is a plan view illustrating a schematic positional relationship between another part of the main zone of the second heater element and another part of the sub-zone of the first heater element according to the third embodiment. [Figure 21] 1 is a cross-sectional view illustrating a wafer processing apparatus according to an embodiment of the present invention. [Figure 22] FIG. 11 is an exploded cross-sectional view illustrating a heater portion according to a modified example of the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0025] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings, the same components are designated by the same reference numerals and detailed description thereof will be omitted as appropriate.

[0026] FIG. 1 is a perspective view that diagrammatically illustrates an electrostatic chuck according to an embodiment of the present invention. 2A and 2B are cross-sectional views that diagrammatically show a portion of the electrostatic chuck according to the embodiment. For convenience of explanation, FIG. 1 shows a cross-sectional view of a part of the electrostatic chuck. FIG. 2(a) is a cross-sectional view taken along line A1-A1 shown in FIG. Fig. 2(b) is an enlarged view of an area B1 shown in Fig. 2(a). Note that the processing target W is omitted in Fig. 2(b).

[0027] As shown in FIGS. 1, 2( a ), and 2 ( b ), an electrostatic chuck 10 according to the embodiment includes a ceramic dielectric substrate 100 , a heater portion 200 , and a base plate 300 .

[0028] The ceramic dielectric substrate 100 is a flat base material made, for example, of a polycrystalline ceramic sintered body, and has a first main surface 101 on which a processing object W, such as a semiconductor wafer, is placed, and a second main surface 102 opposite to the first main surface 101.

[0029] In this specification, the direction perpendicular to the first main surface 101 is defined as the Z direction. In other words, the Z direction is the direction connecting the first main surface 101 and the second main surface 102. In other words, the Z direction is the direction from the base plate 300 toward the ceramic dielectric substrate 100. One of the directions perpendicular to the Z direction is defined as the X direction, and the direction perpendicular to the Z direction and the X direction is defined as the Y direction. In this specification, "in-plane" refers to, for example, within the XY plane. In this specification, "planar view" refers to a state viewed along the Z direction.

[0030] Examples of the crystal material contained in the ceramic dielectric substrate 100 include Al2O3, Y2O3, and YAG. By using such materials, the infrared transmittance, insulation resistance, and plasma durability of the ceramic dielectric substrate 100 can be improved.

[0031] An electrode layer 111 is provided inside the ceramic dielectric substrate 100. The electrode layer 111 is interposed between the first main surface 101 and the second main surface 102. In other words, the electrode layer 111 is formed so as to be inserted into the ceramic dielectric substrate 100. The electrode layer 111 is sintered integrally with the ceramic dielectric substrate 100.

[0032] The electrode layer 111 is not limited to being interposed between the first main surface 101 and the second main surface 102, but may be provided on the second main surface 102.

[0033] The electrostatic chuck 10 generates an electric charge on the first main surface 101 side of the electrode layer 111 by applying an attraction / holding voltage to the electrode layer 111, and attracts and holds the workpiece W by electrostatic force.

[0034] The electrode layer 111 is provided along the first main surface 101 and the second main surface 102. The electrode layer 111 is an adsorption electrode for adsorbing and holding the processing target W. The electrode layer 111 may be of a monopolar type or a bipolar type. The electrode layer 111 may also be of a tripolar type or other multipolar type. The number of electrode layers 111 and the arrangement of the electrode layers 111 are appropriately selected.

[0035] The base plate 300 is provided on the second main surface 102 side of the ceramic dielectric substrate 100, and supports the ceramic dielectric substrate 100. The base plate 300 is provided with a communication path 301. That is, the communication path 301 is provided inside the base plate 300. An example of the material of the base plate 300 is aluminum.

[0036] The base plate 300 serves to adjust the temperature of the ceramic dielectric substrate 100. For example, when cooling the ceramic dielectric substrate 100, a cooling medium is caused to flow into the communicating passage 301, pass through the communicating passage 301, and then flow out from the communicating passage 301. This allows the cooling medium to absorb heat from the base plate 300, thereby cooling the ceramic dielectric substrate 100 mounted thereon.

[0037] Furthermore, convex portions 113 are provided on the first main surface 101 side of the ceramic dielectric substrate 100 as necessary. Grooves 115 are provided between adjacent convex portions 113. The grooves 115 communicate with each other. A space is formed between the grooves 115 and the rear surface of the processing object W mounted on the electrostatic chuck 10.

[0038] An introduction path 321 penetrating the base plate 300 and the ceramic dielectric substrate 100 is connected to the groove 115. When a transfer gas such as helium (He) is introduced from the introduction path 321 while the processing object W is adsorbed and held, the transfer gas flows in the space provided between the processing object W and the groove 115, and the processing object W can be directly heated or cooled by the transfer gas.

[0039] The heater section 200 heats the ceramic dielectric substrate 100. The heater section 200 heats the ceramic dielectric substrate 100, thereby heating the processing object W via the ceramic dielectric substrate 100. In this example, the heater section 200 is separate from the ceramic dielectric substrate 100, and is provided between the ceramic dielectric substrate 100 and the base plate 300.

[0040] An adhesive layer 403 is provided between the base plate 300 and the heater section 200. An adhesive layer 403 is provided between the heater section 200 and the ceramic dielectric substrate 100. The material of the adhesive layer 403 may be a heat-resistant resin such as silicone having a relatively high thermal conductivity. The thickness of the adhesive layer 403 is, for example, about 0.1 millimeters (mm) or more and 1.0 mm or less. The thickness of the adhesive layer 403 is the same as the distance between the base plate 300 and the heater section 200, or the distance between the heater section 200 and the ceramic dielectric substrate 100.

[0041] 3A and 3B are cross-sectional views that diagrammatically show a portion of an electrostatic chuck according to a modified example of the embodiment. Fig. 3(b) is an enlarged view of an area B2 shown in Fig. 3(a). Note that the processing target W is omitted in Fig. 3(b). 3(a) and 3(b), in this example, the heater section 200 is provided between the first main surface 101 and the second main surface 102. That is, the heater section 200 may be formed so as to be inserted into the ceramic dielectric substrate 100. In other words, the heater section 200 may be built into the ceramic dielectric substrate 100. In this case, the adhesive layer 403 is omitted.

[0042] FIG. 4 is an exploded perspective view that illustrates a heater portion according to the embodiment. FIG. 5 is an exploded cross-sectional view that illustrates a heater portion according to the embodiment. 4 and 5, an example will be described in which the heater section 200 is provided between the ceramic dielectric substrate 100 and the base plate 300 as in Fig. 2. In this example, the heater section 200 includes support plates (first support plate 210 and second support plate 270), but the support plates do not have to be provided. When the heater section 200 is provided between the first main surface 101 and the second main surface 102 of the ceramic dielectric substrate 100 as in Fig. 3, the first support plate 210 and the second support plate 270 may be omitted. As shown in Figures 4 and 5, in this example, the heater section 200 has a first support plate 210, a first insulating layer 220, a first heater element 231, a second insulating layer 240, a second heater element 232, a third insulating layer 245, a bypass layer 250, a fourth insulating layer 260, a second support plate 270, and a power supply terminal 280.

[0043] The first support plate 210 is provided on the first heater element 231, the second heater element 232, the bypass layer 250, etc. The second support plate 270 is provided below the first heater element 231, the second heater element 232, the bypass layer 250, etc. A surface 211 (upper surface) of the first support plate 210 forms the upper surface of the heater section 200. A surface 271 (lower surface) of the second support plate 270 forms the lower surface of the heater section 200. When the heater section 200 is built into the ceramic dielectric substrate 100, the first support plate 210 and the second support plate 270 can be omitted.

[0044] The first support plate 210 and the second support plate 270 are support plates that support the first heater element 231, the second heater element 232, etc. In this example, the first support plate 210 and the second support plate 270 sandwich and support the first insulating layer 220, the first heater element 231, the second insulating layer 240, the second heater element 232, the third insulating layer 245, the bypass layer 250, and the fourth insulating layer 260.

[0045] The first insulating layer 220 is provided between the first support plate 210 and the second support plate 270. The first heater element 231 is provided between the first insulating layer 220 and the second support plate 270. In this manner, the first heater element 231 is provided overlapping the first support plate 210. In other words, the first insulating layer 220 is provided between the first support plate 210 and the first heater element 231. When the heater section 200 is built into the ceramic dielectric substrate 100, the ceramic dielectric substrate 100 also serves as the first insulating layer 220.

[0046] The second insulating layer 240 is provided between the first heater element 231 and the second support plate 270. The second heater element 232 is provided between the second insulating layer 240 and the second support plate 270. In this manner, the second heater element 232 is provided in a layer different from the layer in which the first heater element 231 is provided. At least a portion of the second heater element 232 overlaps with the first heater element 231 in the Z direction. The third insulating layer 245 is provided between the second heater element 232 and the second support plate 270. The bypass layer 250 is provided between the third insulating layer 245 and the second support plate 270. The fourth insulating layer 260 is provided between the bypass layer 250 and the second support plate 270.

[0047] In other words, the first heater element 231 is provided between the first insulating layer 220 and the second insulating layer 240. In other words, the second heater element 232 is provided between the second insulating layer 240 and the third insulating layer 245. In other words, the bypass layer 250 is provided between the third insulating layer 245 and the fourth insulating layer 260.

[0048] The first heater element 231, for example, contacts the first insulating layer 220 and the second insulating layer 240, respectively. The second heater element 232, for example, contacts the second insulating layer 240 and the third insulating layer 245, respectively. The bypass layer 250, for example, contacts the third insulating layer 245 and the fourth insulating layer 260, respectively.

[0049] The bypass layer 250 and the fourth insulating layer 260 are provided as necessary and can be omitted. When the bypass layer 250 and the fourth insulating layer 260 are not provided, the third insulating layer 245 contacts the second support plate 270. In the following, a case where the heater section 200 has the bypass layer 250 and the fourth insulating layer 260 will be described as an example.

[0050] The first support plate 210 has a relatively high thermal conductivity. For example, the thermal conductivity of the first support plate 210 is higher than that of the first heater element 231 and higher than that of the second heater element 232. Examples of the material of the first support plate 210 include metals containing at least one of aluminum, copper, and nickel, and multi-layered graphite. The thickness (length in the Z direction) of the first support plate 210 is, for example, about 0.1 mm or more and 3.0 mm or less. More preferably, the thickness of the first support plate 210 is, for example, about 0.3 mm or more and 1.0 mm or less. The first support plate 210 improves the uniformity of the temperature distribution in the surface of the heater section 200. The first support plate 210 functions, for example, as a heat equalizing plate. The first support plate 210 suppresses warping of the heater section 200. The first support plate 210 improves the strength of adhesion between the heater section 200 and the ceramic dielectric substrate 100.

[0051] The material, thickness, and function of the second support plate 270 are the same as those of the first support plate 210. For example, the thermal conductivity of the second support plate 270 is higher than that of the first heater element 231 and higher than that of the second heater element 232. In the embodiment, at least one of the first support plate 210 and the second support plate 270 may be omitted.

[0052] The material of the first insulating layer 220 may be, for example, an insulating material such as resin or ceramic. Examples of the first insulating layer 220 made of resin include polyimide and polyamideimide. Examples of the first insulating layer 220 made of ceramic include Al2O3, Y2O3, and YAG. The thickness (length in the Z direction) of the first insulating layer 220 is, for example, about 0.01 mm or more and 0.20 mm or less. The first insulating layer 220 bonds the first support plate 210 and the first heater element 231. The first insulating layer 220 electrically insulates the first support plate 210 and the first heater element 231. In this way, the first insulating layer 220 has a function of electrical insulation and a function of surface bonding. It is sufficient that the first insulating layer 220 has at least an insulating function, and may have other functions such as a heat conduction function and a diffusion prevention function.

[0053] The material and thickness of the second insulating layer 240 are approximately the same as the material and thickness of the first insulating layer 220. The material and thickness of the third insulating layer 245 are approximately the same as the material and thickness of the first insulating layer 220. The material and thickness of the fourth insulating layer 260 are approximately the same as the material and thickness of the first insulating layer 220.

[0054] The second insulating layer 240 bonds the first heater element 231 and the second heater element 232. The second insulating layer 240 electrically insulates the first heater element 231 and the second heater element 232. In this manner, the second insulating layer 240 has an electrical insulating function and a surface bonding function. Note that the second insulating layer 240 only needs to have at least an insulating function, and may have other functions, such as a heat conducting function and a diffusion preventing function.

[0055] The third insulating layer 245 joins the second heater element 232 and the bypass layer 250. The third insulating layer 245 electrically insulates the second heater element 232 and the bypass layer 250. In this manner, the third insulating layer 245 has an electrical insulating function and a surface bonding function. Note that the third insulating layer 245 only needs to have at least an insulating function, and may have other functions, such as a heat conducting function and a diffusion preventing function.

[0056] The fourth insulating layer 260 joins the bypass layer 250 and the second support plate 270. The fourth insulating layer 260 electrically insulates the bypass layer 250 and the second support plate 270. In this manner, the fourth insulating layer 260 has an electrical insulating function and a surface-bonding function. Note that the fourth insulating layer 260 only needs to have at least an insulating function, and may have other functions, such as a heat conducting function and a diffusion preventing function.

[0057] Examples of the material of the first heater element 231 include metals including at least one of stainless steel, titanium, chromium, nickel, copper, aluminum, Inconel (registered trademark), nickel, molybdenum, tungsten, palladium, platinum, silver, tantalum, molybdenum carbide, and tungsten carbide. The thickness (length in the Z direction) of the first heater element 231 is, for example, about 0.01 mm or more and 0.20 mm or less. The material and thickness of the second heater element 232 are approximately the same as those of the first heater element 231. The first heater element 231 and the second heater element 232 are, for example, electrically connected to the bypass layer 250, respectively. On the other hand, the first heater element 231 and the second heater element 232 are electrically insulated from the first support plate 210 and the second support plate 270, respectively.

[0058] The first heater element 231 and the second heater element 232 each generate heat when a current flows therethrough. The first heater element 231 and the second heater element 232 generate heat to heat the ceramic dielectric substrate 100. The first heater element 231 and the second heater element 232 heat the processing object W, for example, via the ceramic dielectric substrate 100, to uniformize the temperature distribution within the surface of the processing object W. Alternatively, the first heater element 231 and the second heater element 232 can intentionally create a difference in temperature within the surface of the processing object W, for example, by heating the processing object W via the ceramic dielectric substrate 100.

[0059] The bypass layer 250 is disposed approximately parallel to the first support plate 210 and approximately parallel to the second support plate 270. The bypass layer 250 has a plurality of bypass portions 251. In this example, the bypass layer 250 has eight bypass portions 251. The number of bypass portions 251 is not limited to "8". The bypass layer 250 has a plate shape.

[0060] The bypass layer 250 has, for example, electrical conductivity. The bypass layer 250 is, for example, electrically connected to the first heater element 231 and the second heater element 232. The bypass layer 250 is a power supply path for the first heater element 231 and the second heater element 232. On the other hand, the bypass layer 250 is, for example, electrically insulated from the first support plate 210 and the second support plate 270 by an insulating layer.

[0061] The thickness (length in the Z direction) of the bypass layer 250 is, for example, approximately 0.03 mm or more and 0.30 mm or less. The thickness of the bypass layer 250 is thicker than the thickness of the first insulating layer 220. The thickness of the bypass layer 250 is thicker than the thickness of the second insulating layer 240. The thickness of the bypass layer 250 is thicker than the thickness of the third insulating layer 245. The thickness of the bypass layer 250 is thicker than the thickness of the fourth insulating layer 260.

[0062] For example, the material of the bypass layer 250 is the same as the material of the first heater element 231 and the second heater element 232. On the other hand, the thickness of the bypass layer 250 is thicker than the thickness of the first heater element 231 and thicker than the thickness of the second heater element 232. Therefore, the electrical resistance of the bypass layer 250 is lower than the electrical resistance of the first heater element 231 and lower than the electrical resistance of the second heater element 232. This makes it possible to prevent the bypass layer 250 from generating heat like the first heater element 231 and the second heater element 232, even if the material of the bypass layer 250 is the same as the material of the first heater element 231 and the second heater element 232. In other words, the electrical resistance of the bypass layer 250 can be reduced, and the amount of heat generated by the bypass layer 250 can be reduced.

[0063] Note that the means for suppressing the electrical resistance of the bypass layer 250 and suppressing the amount of heat generated by the bypass layer 250 may be realized by using a material having a relatively low volume resistivity, rather than the thickness of the bypass layer 250. That is, the material of the bypass layer 250 may be different from the material of the first heater element 231 and the second heater element 232. Examples of the material of the bypass layer 250 include metals containing at least one of stainless steel, titanium, chromium, nickel, copper, and aluminum.

[0064] The power supply terminal 280 is electrically connected to the bypass layer 250. In a state in which the heater section 200 is provided between the base plate 300 and the ceramic dielectric substrate 100, the power supply terminal 280 is provided from the heater section 200 toward the base plate 300. The power supply terminal 280 supplies power supplied from the outside of the electrostatic chuck 10 to the first heater element 231 and the second heater element 232 via the bypass layer 250. The power supply terminal 280 may be directly connected to the first heater element 231 and the second heater element 232, for example. This makes it possible to omit the bypass layer 250.

[0065] On the other hand, when the first heater element 231 and / or the second heater element 232 has a large number of zones, for example, 20 or more, 50 or more, or 100 or more, it is difficult to arrange the power supply terminals 280 corresponding to each zone. By providing the bypass layer 250, the degree of freedom in arranging the power supply terminals 280 is improved compared to the case where the power supply terminals are arranged for each zone.

[0066] The heater section 200 has a plurality of power supply terminals 280. In this example, the heater section 200 has eight power supply terminals 280. The number of power supply terminals 280 is not limited to "8". One power supply terminal 280 is electrically connected to one bypass section 251. In other words, the number of power supply terminals 280 is the same as the number of bypass sections 251. The hole 273 penetrates the second support plate 270. The power supply terminal 280 is electrically connected to the bypass section 251 through the hole 273.

[0067] The first heater element 231 includes a first sub-power feeder 231a, a second sub-power feeder 231b, and a sub-heater line 231c. The sub-heater line 231c is electrically connected to the first sub-power feeder 231a and the second sub-power feeder 231b. The first sub-power feeder 231a is provided at one end of the sub-heater line 231c, and the second sub-power feeder 231b is provided at the other end of the sub-heater line 231c. The sub-heater line 231c generates heat when a current flows through it. The first sub-power feeder 231a and the second sub-power feeder 231b feed power to the sub-heater line 231c. The first heater element 231 is electrically connected to the bypass layer 250 at the first sub-power feeder 231a and the second sub-power feeder 231b.

[0068] As indicated by arrows C1 and C2 in Fig. 5, when power is supplied to the power supply terminal 280 from the outside of the electrostatic chuck 10, a current flows from the power supply terminal 280 to the bypass layer 250. As indicated by arrows C3 and C4 in Fig. 5, the current flowing to the bypass layer 250 flows from the bypass layer 250 to the first heater element 231. As indicated by arrows C5 and C6 in Fig. 5, the current flowing to the first heater element 231 flows through a predetermined region of the first heater element 231 and flows from the first heater element 231 to the bypass layer 250. More specifically, the current flowing to the bypass layer 250 flows to the sub-heater line 231c via the first sub-power supply unit 231a, and flows to the bypass layer 250 via the second sub-power supply unit 231b. 5, the current flowing to the bypass layer 250 flows from the bypass layer 250 to the power supply terminal 280. As shown in FIG 5, the current flowing to the power supply terminal 280 flows to the outside of the electrostatic chuck 10.

[0069] The second heater element 232 has a first main power supply 232a, a second main power supply 232b, and a main heater line 232c. The main heater line 232c is electrically connected to the first main power supply 232a and the second main power supply 232b. The first main power supply 232a is provided at one end of the main heater line 232c, and the second main power supply 232b is provided at the other end of the main heater line 232c. The main heater line 232c generates heat when a current flows through it. The first main power supply 232a and the second main power supply 232b supply power to the main heater line 232c. The second heater element 232 is electrically connected to the bypass layer 250 at the first main power supply 232a and the second main power supply 232b.

[0070] As indicated by arrows C11 and C12 in Fig. 5, when power is supplied to the power supply terminal 280 from the outside of the electrostatic chuck 10, a current flows from the power supply terminal 280 to the bypass layer 250. As indicated by arrows C13 and C14 in Fig. 5, the current flowing to the bypass layer 250 flows from the bypass layer 250 to the second heater element 232. As indicated by arrows C15 and C16 in Fig. 5, the current flowing to the second heater element 232 flows through a predetermined region of the second heater element 232 and flows from the second heater element 232 to the bypass layer 250. More specifically, the current flowing to the bypass layer 250 flows to the main heater line 232c via the first main power supply unit 232a, and flows to the bypass layer 250 via the second main power supply unit 232b. 5, the current flowing to the bypass layer 250 flows from the bypass layer 250 to the power supply terminal 280. As shown in FIG 5, the current flowing to the power supply terminal 280 flows to the outside of the electrostatic chuck 10.

[0071] For example, the current flowing through the first heater element 231 and the current flowing through the second heater element 232 are controlled separately. In this example, the bypass section 251 connected to the first heater element 231 (first sub power feed section 231a and second sub power feed section 231b) and the bypass section 251 connected to the second heater element 232 (first main power feed section 232a and second main power feed section 232b) are different from each other. The bypass section 251 connected to the first heater element 231 (first sub power feed section 231a and second sub power feed section 231b) and the bypass section 251 connected to the second heater element 232 (first main power feed section 232a and second main power feed section 232b) may be the same.

[0072] The first heater element 231 generates less heat than the second heater element 232. That is, the first heater element 231 is a low-output sub-heater, and the second heater element 232 is a high-output main heater.

[0073] In this way, the first heater element 231 generates less heat than the second heater element 232, so that the first heater element 231 can suppress temperature unevenness within the surface of the processing object W caused by the pattern of the second heater element 232. Therefore, the uniformity of the temperature distribution within the surface of the processing object W can be improved.

[0074] The volume resistivity of the first heater element 231 is higher than that of the second heater element 232, for example. The volume resistivity of the first heater element 231 is the volume resistivity of the sub-heater line 231c. That is, the volume resistivity of the first heater element 231 is the volume resistivity between the first sub-power feeder 231a and the second sub-power feeder 231b. In other words, the volume resistivity of the first heater element 231 is the volume resistivity in the path indicated by the arrow C5 in FIG. 5. Similarly, the volume resistivity of the second heater element 232 is the volume resistivity of the main heater line 232c. That is, the volume resistivity of the second heater element 232 is the volume resistivity between the first main power feeder 232a and the second main power feeder 232b. In other words, the volume resistivity of the second heater element 232 is the volume resistivity in the path indicated by the arrow C15 in FIG. 5.

[0075] In this way, by making the volume resistivity of the first heater element 231 higher than that of the second heater element 232, the output (heat generation amount, power consumption) of the first heater element 231 can be made lower than the output (heat generation amount, power consumption) of the second heater element 232. This makes it possible for the first heater element to suppress temperature unevenness within the surface of the processing object caused by the pattern of the second heater element. Therefore, it is possible to improve the uniformity of the temperature distribution within the surface of the processing object.

[0076] The area around the power supply terminal 280 is likely to become a temperature singular point (a point where the temperature is relatively significantly different from the surrounding area). In response to this, the bypass layer 250 is provided, which increases the degree of freedom in arranging the power supply terminal 280. For example, the power supply terminals 280 that are likely to become temperature singular points can be arranged in a dispersed manner, which makes it easier for heat to diffuse around the singular points. This can improve the uniformity of the temperature distribution within the surface of the processing object W.

[0077] By providing the bypass layer 250, it is possible to configure the power supply terminal 280, which has a large heat capacity, not to be directly connected to the first heater element 231 and the second heater element 232. This can improve the uniformity of the temperature distribution within the surface of the processing object W. Furthermore, by providing the bypass layer 250, it is not necessary to directly connect the power supply terminal 280 to the first heater element 231 and the second heater element 232, which are relatively thin. This can improve the reliability of the heater section 200.

[0078] As described above, the power supply terminal 280 is provided from the heater unit 200 toward the base plate 300. Therefore, power can be supplied to the power supply terminal 280 from the lower surface 303 (see FIGS. 2(a) and 2(b)) side of the base plate 300 via a member called a socket or the like. This allows wiring of the heater to be realized while preventing the power supply terminal 280 from being exposed in a chamber in which the electrostatic chuck 10 is installed.

[0079] In this example, the first heater element 231 is located above the second heater element 232. In other words, the first heater element 231 is provided between the second heater element 232 and the first main surface 101. The positions of the first heater element 231 and the second heater element 232 may be reversed. That is, the second heater element 232 may be located above the first heater element 231. In other words, the second heater element 232 may be provided between the first main surface 101 and the first heater element 231. From the viewpoint of temperature control, it is preferable that the first heater element 231 is located above the second heater element 232.

[0080] When the first heater element 231 is positioned above the second heater element 232, the distance between the first heater element 231 and the processing object W is shorter than the distance between the second heater element 232 and the processing object W. Since the first heater element 231 is relatively close to the processing object W, the first heater element 231 can easily control the temperature of the processing object W. That is, the first heater element 231 can easily suppress temperature unevenness in the surface of the processing object W caused by the pattern of the second heater element 232. Therefore, the uniformity of the temperature distribution in the surface of the processing object W can be improved.

[0081] On the other hand, when the second heater element 232 is positioned above the first heater element 231, the high-output second heater element 232 is relatively close to the treatment object W. This can improve the temperature responsiveness (heating rate and cooling rate) of the treatment object W.

[0082] In this example, the second heater element 232 is provided between the bypass layer 250 and the first heater element 231 in the Z direction. That is, the bypass layer 250 is located below the first heater element 231 and the second heater element 232.

[0083] In this way, by providing the second heater element 232 between the bypass layer 250 and the first heater element 231 in the Z direction, the first heater element 231 and the second heater element 232 can be arranged on one side of the bypass layer 250. Thereby, when connecting the power supply terminal 280 to the bypass layer 250, the power supply terminal 280 can be connected to the bypass layer 250 from the opposite side to the first heater element 231 and the second heater element 232. Therefore, it is not necessary to provide a hole for passing the power supply terminal 280 in the first heater element 231 and the second heater element 232, and it is possible to reduce temperature singularities on the heater pattern and improve the uniformity of the temperature distribution in the plane of the first heater element 231 and the second heater element 232.

[0084] The bypass layer 250 may be located above the first heater element 231 and the second heater element 232. That is, the bypass layer 250 may be provided between the first support plate 210 and the first heater element 231. The bypass layer 250 may be provided between the first support plate 210 and the second heater element 232. The bypass layer 250 may be located between the first heater element 231 and the second heater element 232.

[0085] Furthermore, the number of heater elements included in the heater section 200 is not limited to "2." In other words, the heater section 200 may further include another heater element provided in a layer different from the first heater element 231 and the second heater element 232.

[0086] Fig. 6 is a plan view that typically illustrates the main zone of the second heater element according to the first embodiment. Fig. 6 is a view in which the second heater element 232 illustrated in Fig. 4 is projected onto a plane perpendicular to the Z direction. 6, the second heater element 232 has a plurality of main zones 600 divided in the radial direction Dr. In the second heater element 232, the temperature of each main zone 600 is independently controlled. In this specification, the term "radial direction Dr" refers to a direction from the center of the heater element toward the outer periphery along the radius, and the term "circumferential direction Dc" refers to a direction along the outer periphery of the heater element.

[0087] In this example, the multiple main zones 600 include three main zones 601 to 603 aligned in the radial direction Dr. That is, the second heater element 232 is divided into three in the radial direction Dr. The main zones 600 are arranged in the order of main zone 601, main zone 602, and main zone 603 from the center CT2 of the second heater element 232 toward the outside in the radial direction Dr.

[0088] In this example, the main zone 601 is circular and centered on the center CT2 in plan view. The main zone 602 is annular and located outside the main zone 601 and centered on the center CT2 in plan view. The main zone 603 is annular and located outside the main zone 602 and centered on the center CT2 in plan view.

[0089] In this example, the width LM1 in the radial direction Dr of the main zone 601, the width LM2 in the radial direction Dr of the main zone 602, and the width LM3 in the radial direction Dr of the main zone 603 are all the same. The widths LM1 to LM3 may be different from each other.

[0090] The number of main zones 600 and the shape of the main zones 600 in a plan view may be arbitrary. The main zones 600 may be divided in the circumferential direction Dc, or may be divided in the circumferential direction Dc and the radial direction Dr. The configuration of each main zone 600 will be described later.

[0091] The main heater lines 232c constituting each main zone 600 are independent of each other. This allows a different voltage to be applied to each main zone 600 (main heater line 232c). Therefore, the output (amount of heat generated) of each main zone 600 can be controlled independently. In other words, each main zone 600 is a heater unit capable of performing temperature control independent of each other, and the second heater element 232 is an assembly of heater units having a plurality of such heater units.

[0092] 6, for the sake of convenience, the ends of the main zones 600 in the radial direction Dr are shown as being in contact with each other, but in reality, there are gaps between them (i.e., portions where the main heater lines 232c are not provided), and the ends of adjacent main zones in the radial direction Dr do not come into contact with each other. The same applies to the following figures.

[0093] The main zone 601 and the main zone 602 are adjacent to each other via a boundary 651. That is, the boundary 651 is located between the main zone 601 and the main zone 602. The boundary 651 is a region consisting of the outer end of the main zone 601 in the radial direction Dr, the inner end of the main zone 602 in the radial direction Dr, and a gap located between them. The main zone 602 and the main zone 603 are adjacent to each other via a boundary 652. That is, the boundary 652 is located between the main zone 602 and the main zone 603. The boundary 652 is a region consisting of the outer end of the main zone 602 in the radial direction Dr, the inner end of the main zone 603 in the radial direction Dr, and a gap located between them. The outer end of the main zone 603 in the radial direction Dr constitutes the outer peripheral edge 232e of the second heater element 232. The boundary 651 and the boundary 652 may correspond to, for example, either a first boundary 615 or a second boundary 625 described below.

[0094] Fig. 7 is a plan view that typically illustrates a subzone of the first heater element according to the first embodiment. Fig. 7 is a view in which the first heater element 231 illustrated in Fig. 4 is projected onto a plane perpendicular to the Z direction. 7, in this example, the first heater element 231 has a plurality of subzones 700 divided in a radial direction Dr and a circumferential direction Dc. In the first heater element 231, the temperature of each subzone 700 is independently controlled.

[0095] In this example, the subzones 700 include a first region 701 consisting of subzones 701a to 701f arranged in the circumferential direction Dc, and a second region 702 consisting of subzones 702a to 702f arranged in the circumferential direction Dc. That is, the second heater element 232 is divided into two in the radial direction Dr. Furthermore, the first region 701 and the second region 702 are each divided into six in the circumferential direction Dc. The first region 701 and the second region 702 are arranged in this order from the center CT1 of the first heater element 231 toward the outside in the radial direction Dr.

[0096] The first region 701 has a circular shape centered on the center CT1 in plan view. The second region 702 has an annular shape centered on the center CT1 and is positioned outside the first region 701 in plan view.

[0097] The first area 701 has subzones 701a to 701f. In the first area 701, the subzones 701a to 701f are arranged in the following order clockwise: subzone 701a, subzone 701b, subzone 701c, subzone 701d, subzone 701e, and subzone 701f. Each of the subzones 701a to 701f constitutes a part of the circular first area 701.

[0098] The second region 702 has subzones 702a to 702f. In the second region 702, the subzones 702a to 702f are arranged in the following order clockwise: subzone 702a, subzone 702b, subzone 702c, subzone 702d, subzone 702e, and subzone 702f. In this example, the subzone 702a is located outside the subzone 701a. The subzone 702b is located outside the subzone 701b. The subzone 702c is located outside the subzone 701c. The subzone 702d is located outside the subzone 701d. The subzone 702e is located outside the subzone 701e. The subzone 702f is located outside the subzone 701f. The subzones 702a to 702f each constitute a part of the annular second region 702.

[0099] In this example, the width LS1 in the radial direction Dr of the first region 701 and the width LS2 in the radial direction Dr of the second region 702 are the same. The width LS1 and the width LS2 may be different.

[0100] The number of the sub-zones 700 is greater than the number of the main zones 600. In other words, the first heater element 231 is divided into more zones than the second heater element 232.

[0101] By making the number of subzones 700 included in the first heater element 231 greater than the number of main zones 600 included in the second heater element 232, the first heater element 231 can adjust the temperature in a narrower area than the second heater element 232. This allows the first heater element 231 to perform fine temperature adjustments more precisely, and improves the uniformity of the temperature distribution within the surface of the treatment object W.

[0102] The number of subzones 700 and the shape of the subzones 700 in a plan view may be arbitrary. The subzones 700 do not have to be divided in the circumferential direction Dc. In other words, the first region 701 and the second region 702 do not have to include a plurality of subzones 700 divided in the circumferential direction Dc. The configuration within each subzone 700 will be described later.

[0103] The sub-heater lines 231c constituting each sub-zone 700 are independent of each other. This allows a different voltage to be applied to each sub-zone 700 (sub-heater line 231c). Therefore, the output (amount of heat generated) of each sub-zone 700 can be controlled independently. In other words, each sub-zone 700 is a heater unit capable of performing temperature control independent of each other, and the first heater element 231 is an assembly of heater units having a plurality of such heater units.

[0104] 7, for convenience, the ends of the subzones 700 in the radial direction Dr are shown as being in contact with each other, but in reality, there are gaps between them (i.e., portions where the sub-heater lines 231c are not provided), and the ends of adjacent subzones 700 in the radial direction Dr do not come into contact with each other. The same applies to the subsequent figures.

[0105] Each subzone 700 has an end on the inside in the radial direction Dr or the outside in the radial direction Dr. In this example, the inside end of the subzones 701a to 701f in the radial direction Dr is located near the center CT1. A gap is provided between the outside end of the subzones 701a to 701f in the radial direction Dr and the inside end of the subzones 702a to 702f in the radial direction Dr. The outside end of the subzones 702a to 702f in the radial direction Dr constitutes the outer peripheral edge 231e of the first heater element 231. The inside end and the outside end of each subzone 700 in the radial direction Dr can correspond to, for example, either a first radial end 710a or a second radial end 710b described later.

[0106] FIG. 8 is a plan view illustrating a schematic view of a part of the main zone of the second heater element according to the first embodiment. 8, the main zone 600 includes a first main power supply unit 232a, a second main power supply unit 232b, and a main heater line 232c. Each main zone 600 includes one first main power supply unit 232a, one second main power supply unit 232b, and one main heater line 232c. The main zone 600 is an area that includes the continuous main heater line 232c that connects the first main power supply unit 232a and the second main power supply unit 232b.

[0107] FIG. 9 is a plan view that diagrammatically illustrates a portion of a subzone of the first heater element according to the first embodiment. 9, the subzone 700 includes a first sub-power supply section 231a, a second sub-power supply section 231b, and a sub-heater line 231c. Each subzone 700 includes one first sub-power supply section 231a, one second sub-power supply section 231b, and one sub-heater line 231c. The subzone 700 is an area that includes the continuous sub-heater line 231c that connects the first sub-power supply section 231a and the second sub-power supply section 231b.

[0108] FIG. 10 is a plan view illustrating a schematic positional relationship between the main zone of the second heater element and the sub zone of the first heater element according to the first embodiment. FIG. 11 is a plan view illustrating a schematic positional relationship between a part of the main zone of the second heater element and a part of the sub-zone of the first heater element according to the first embodiment. 10 and 11 show the positional relationship when the second heater element 232 shown in FIG. 6 and the first heater element 231 shown in FIG. 7 are superimposed and viewed along the Z direction.

[0109] 10 and 11, the main zone 600 of the second heater element 232 is indicated by a two-dot chain line, and the sub-zone 700 of the first heater element 231 is indicated by a solid line. Hereinafter, when the positional relationship in a state in which the second heater element 232 and the first heater element 231 are overlapped is shown in a plan view, the main zone 600 of the second heater element 232 is indicated by a two-dot chain line, and the sub-zone 700 of the first heater element 231 is indicated by a solid line, as in FIGS.

[0110] 10, the first heater element 231 and the second heater element 232 are arranged such that, for example, a center CT1 of the first heater element 231 and a center CT2 of the second heater element 232 overlap in the Z direction. In this example, the outer periphery 231e of the first heater element 231 and the outer periphery 232e of the second heater element 232 overlap in the Z direction. It is also preferable to arrange the outer periphery 231e of the first heater element 231 and the outer periphery 232e of the second heater element 232 so that they do not overlap.

[0111] Fig. 11 shows the positional relationship between the main zones 602 and 603 in Fig. 6 and the sub-zone 702e in Fig. 7. Here, an example will be described in which the first main zone 610 is the main zone 602, the second main zone 620 is the main zone 603, and the first sub-zone 710 is the sub-zone 702e. The first main zone 610 and the second main zone 620 are each one of the main zones 600. The first sub-zone 710 is one of the sub-zones 700.

[0112] As shown in FIG. 11, the second main zone 620 is adjacent to the first main zone 610 via a first boundary 615 in the radial direction Dr. The first boundary 615 is located between the first main zone 610 and the second main zone 620 in the radial direction Dr. In this example, the first boundary 615 is a boundary 652 between the main zone 602 and the main zone 603. More specifically, the first boundary 615 is composed of an end portion of the main heater line 232c constituting the first main zone 610 on the second main zone 620 side (in this example, the outer side in the radial direction Dr), an end portion of the main heater line 232c constituting the second main zone 620 on the first main zone 610 side (in this example, the inner side in the radial direction Dr), and a gap between them (i.e., a portion where the main heater line 232c is not provided). In FIG. 11, for convenience of explanation, the first boundary 615 is represented by a line, but the first boundary 615 is an area having a predetermined width in the radial direction Dr.

[0113] Moreover, when the second heater element 232 has three or more main zones 600, the second heater element 232 further has a third main zone 630 adjacent to the first main zone 610 or the second main zone 620 in the radial direction Dr. In this example, the third main zone 630 is a main zone 601 located inside the main zone 602 (first main zone 610) in the radial direction Dr.

[0114] The third main zone 630 is adjacent to the first main zone 610 via a second boundary 625 in the radial direction Dr. The second boundary 625 is located between the first main zone 610 and the third main zone 630 in the radial direction Dr. In this example, the second boundary 625 is a boundary 651 between the main zone 601 and the main zone 602. More specifically, the second boundary 625 is composed of an end portion of the main heater line 232c constituting the third main zone 630 on the first main zone 610 side (in this example, the outer side in the radial direction Dr), an end portion of the main heater line 232c constituting the first main zone 610 on the third main zone 630 side (in this example, the inner side in the radial direction Dr), and a gap between them (i.e., a portion where the main heater line 232c is not provided). In FIG. 11, for convenience of explanation, the second boundary 625 is represented by a line, but the second boundary 625 is an area having a predetermined width in the radial direction Dr.

[0115] In this example, the second boundary 625 is located inside the first boundary 615 in the radial direction Dr, but the second boundary 625 may be located outside the first boundary 615 in the radial direction Dr. In other words, the third main zone 630 may be located outside the second main zone 620 in the radial direction Dr.

[0116] In this example, the main zone 603 (the second main zone 620) is located at the outermost periphery of the second heater element 232. The end of the main zone 603 (the second main zone 620) on the opposite side to the main zone 602 (the outer side in the radial direction Dr) constitutes the outer periphery 232e of the second heater element 232.

[0117] The first sub-zone 710 overlaps in the Z direction with at least one of the first main zone 610 and the second main zone 620. In this example, the first sub-zone 710 overlaps in the Z direction with both the first main zone 610 and the second main zone 620.

[0118] The first subzone 710 has a first radial end 710a and a second radial end 710b which are ends in the radial direction Dr. The second radial end 710b is located inside or outside the first radial end 710a in the radial direction Dr. The first radial end 710a is, for example, one of the inner circumferential end 721 and the outer circumferential end 722, and the second radial end 710b is, for example, the other of the inner circumferential end 721 and the outer circumferential end 722. In this example, the first radial end 710a is the inner circumferential end 721, and the second radial end 710b is the outer circumferential end 722. The first radial end 710a may be the outer circumferential end 722, and the second radial end 710b may be the inner circumferential end 721. As will be described later, the first subzone 710 may be, for example, a circular shape in which the first radial end 710a is the outer circumferential end 722 and the second radial end 710b is not present.

[0119] At least a part of the first radial end 710a (inner circumferential end 721) of the first sub-zone 710 does not overlap in the Z direction with the first boundary 615 (boundary 652) between the first main zone 610 and the second main zone 620. In this example, the first radial end 710a does not overlap in the Z direction with the second boundary 625 (boundary 651) either.

[0120] In this example, at least a portion of the second radial end 710b (outer peripheral end 722) does not overlap with the first boundary 615 (boundary 652) in the Z direction. In this example, the second radial end 710b overlaps with the outer peripheral edge 232e in the Z direction.

[0121] When the first and second heater elements have multiple zones, the temperature of the outer peripheral region of each zone tends to be lower than the temperature of the central region of the zone. In other words, the temperature of the boundary between the subzones 700 of the first heater element 231 and the boundary between the main zones 600 of the second heater element 232 tends to be lower than the other parts. Therefore, for example, when the end (first radial end 710a) in the radial direction Dr of the subzone 700 of the first heater element 231 overlaps with the boundary (first boundary 615) in the radial direction Dr of the main zone 600 of the second heater element 232, the temperature of the overlapping part becomes lower than the temperature of the other parts, and the uniformity of the temperature distribution in the surface of the heater section 200 may be reduced.

[0122] In contrast, according to the electrostatic chuck 10 of the embodiment, at least a part of the first radial end 710a of the first subzone 710 is arranged not to overlap at least the first boundary 615 (boundary 652) of the main zone 600 in the Z direction (i.e., the end of the subzone 700 in the radial direction Dr is arranged to be shifted from the boundary of the main zone 600 in the radial direction Dr), thereby improving the uniformity of the temperature distribution within the surface of the heater section 200. As a result, the uniformity of the temperature distribution within the surface of the processing object W can be improved.

[0123] In addition, by ensuring that at least a portion of the first radial end 710a and at least a portion of the second radial end 710b of the first subzone 710 do not overlap with the first boundary 615 (boundary 652) of the main zone 600 in the Z direction (i.e., by positioning both ends of the subzone 700 in the radial direction Dr so as to be offset from the boundary in the radial direction Dr of the main zone 600), the uniformity of the temperature distribution within the surface of the heater section 200 can be further improved.

[0124] In addition, when the first radial end 710a is the outer circumferential end 722 and the second radial end 710b is the inner circumferential end 721, as long as at least a portion of the first radial end 710a (outer circumferential end 722) does not overlap with the first boundary 615 in the Z direction, the entirety of the second radial end 710b (inner circumferential end 721) may overlap with the first boundary 615 in the Z direction.

[0125] Also, in this example, the second radial end 710b of the first subzone 710 overlaps in the Z direction with the outer peripheral edge 232e of the second heater element 232. It is preferable that the first radial end 710a and the second radial end 710b of the first subzone 710 do not overlap in the Z direction with the outer peripheral edge 232e of the second heater element 232. It is also preferable that the first radial end 710a and the second radial end 710b of the first subzone 710 do not overlap in the Z direction with any boundary between two adjacent main zones.

[0126] In the first subzone 710, it is preferable that the first radial end 710a is arranged so as not to overlap both the first boundary 615 (boundary 652) and the second boundary 625 (boundary 651). In addition, it is also preferable that the second radial end 710b is arranged so as not to overlap both the first boundary 615 (boundary 625) and the outer peripheral edge 232e in the first subzone 710. In the first subzone 710, it is further preferable that the first radial end 710a is arranged so as not to overlap both the first boundary 615 (boundary 652) and the second boundary 625 (boundary 651), and further, that the second radial end 710b is arranged so as not to overlap both the first boundary 615 (boundary 652) and the outer peripheral edge 232e.

[0127] 11, in an example in which the first main zone 610 corresponds to the main zone 602 and the second main zone 620 corresponds to the main zone 603, the boundary 652 is described as the first boundary 615 and the boundary 651 is described as the second boundary 625. For example, in an example in which the first main zone 610 corresponds to the main zone 601 and the second main zone 620 corresponds to the main zone 602, the boundary 651 can correspond to the first boundary 615 and the boundary 652 can correspond to the second boundary 625.

[0128] 11, the first subzone 710 has a central region 711 and an outer circumferential region 712. The central region 711 is located at the center of the first subzone 710 in a plan view. The outer circumferential region 712 is located outside the central region 711 in a plan view, and includes a first radial end 710a (inner circumferential end 721) and a second radial end 710b (outer circumferential end 722). For example, when the first subzone 710 is heated, the temperature of the central region 711 becomes higher than the temperature of the outer circumferential region 712.

[0129] In this example, the first subzone 710 is an area surrounded by an inner circumferential end 721, an outer circumferential end 722, a first side end 723, and a second side end 724. As shown in Fig. 9, the inner circumferential end 721 overlaps with an inner end in the radial direction Dr of the sub-heater line 231c constituting the first subzone 710. The outer circumferential end 722 overlaps with an outer end in the radial direction Dr of the sub-heater line 231c constituting the first subzone 710. In this example, the inner circumferential end 721 and the outer circumferential end 722 are arc-shaped.

[0130] The first side end 723 is located between one end of the inner circumferential end 721 and one end of the outer circumferential end 722, and overlaps with one end of the sub-heater line 231c that constitutes the first subzone 710 in the circumferential direction Dc. The second side end 724 is located between the other end of the inner circumferential end 721 and the other end of the outer circumferential end 722, and overlaps with the other end of the sub-heater line 231c that constitutes the first subzone 710 in the circumferential direction Dc. In this example, the first side end 723 and the second side end 724 are linear.

[0131] The central region 711 includes, for example, a center 715 of the first subzone 710. The center 715 is an intersection point of a center line RL1 in a radial direction Dr between the inner circumferential end 721 and the outer circumferential end 722 and a center line CL1 in a circumferential direction Dc between the first side end 723 and the second side end 724.

[0132] The central region 711 is a region between a center line RL2 in the radial direction Dr between the inner circumferential end 721 and the center line RL1 and a center line RL3 in the radial direction Dr between the outer circumferential end 722 and the center line RL1, and also between a center line CL2 in the circumferential direction Dc between the first side end 723 and the center line CL1 and a center line CL3 in the circumferential direction Dc between the second side end 724 and the center line CL1. In other words, the central region 711 is inside the region surrounded by the center lines RL2, RL3, CL2, and CL3.

[0133] The outer circumferential region 712 is a region located outside the center lines RL2, RL3, CL2, and CL3 (i.e., on the opposite side to the center 715). That is, the outer circumferential region 712 is located between the center line RL2 and the inner circumferential edge 721, between the center line RL3 and the outer circumferential edge 722, between the center line CL2 and the first side edge 723, and between the center line CL3 and the second side edge 724.

[0134] In this example, the first boundary 615 (boundary 652) between the first main zone 610 and the second main zone 620 overlaps with the central region 711 of the first sub-zone 710 in the Z direction. That is, the first boundary 615 (boundary 652) is located between the center line RL2 and the center line RL3 in the radial direction Dr.

[0135] The first boundary 615 may not overlap with the central region 711 of the first subzone 710 in the Z direction. The first boundary 615 (boundary 652) may be located, for example, between the first radial end 710a (inner circumferential end 721) and the center line RL2 in the radial direction Dr. The first boundary 615 (boundary 652) may be located, for example, between the second radial end 710b (outer circumferential end 722) and the center line RL3 in the radial direction Dr.

[0136] Furthermore, the first boundary 615 does not have to overlap with the first subzone 710 in the Z direction. The first boundary 615 may be located, for example, on the inside in the radial direction Dr of an inner circumferential end 721 of the first subzone 710. The first boundary 615 may be located, for example, on the outside in the radial direction Dr of an outer circumferential end 722 of the first subzone 710.

[0137] FIG. 12 is a plan view illustrating a schematic positional relationship between another part of the main zone of the second heater element and another part of the sub-zone of the first heater element according to the first embodiment. Fig. 12 shows the positional relationship between the main zones 601 and 602 in Fig. 6 and the sub-zone 701e in Fig. 7. Here, an example will be described in which the first main zone 610 is the main zone 601, the second main zone 620 is the main zone 602, the third main zone 630 is the main zone 603, the first boundary 615 is the boundary 651, the second boundary 625 is the boundary 652, and the first sub-zone 710 is the sub-zone 701e.

[0138] 12, in this example, an inner peripheral end 721 of the first subzone 710 is located near a center CT1 of the first heater element 231. The first subzone 710 is a substantially sector-shaped region surrounded by an outer peripheral end 722, a first side end 723, a second side end 724, and the inner peripheral end 721. The first subzone 710 (subzone 701e) shown in FIG. 12 is substantially the same as the first subzone 710 (subzone 702e) shown in FIG. 11 except for the shape, so a description of the central region 711 and the outer peripheral region 712 will be omitted here.

[0139] In this example, the first radial end 710a (inner peripheral end 721) and the second radial end 710b (outer peripheral end 722) of the first sub-zone 710 do not overlap the first boundary 615 (boundary 651) between the first main zone 610 and the second main zone 620 in the Z direction. The second radial end 710b (outer peripheral end 722) may overlap the first boundary 615 (boundary 651) in the Z direction. Alternatively, the first radial end 710a may be the outer peripheral end 722 and the second radial end 710b may be the inner peripheral end 721, the first radial end 710a may not overlap the first boundary 615 (boundary 651) in the Z direction, and the second radial end 710b may overlap the first boundary 615 (boundary 651) in the Z direction. In this example, the second radial end 710b does not overlap with the second boundary 625 (boundary 652) in the Z direction.

[0140] Also in this example, the first boundary 615 (boundary 651) overlaps with the central region 711 of the first subzone 710 in the Z direction. The first boundary 615 (boundary 651) does not have to overlap with the central region 711 of the first subzone 710 in the Z direction. Also, the first boundary 615 (boundary 651) does not have to overlap with the first subzone 710 in the Z direction. In other words, the first boundary 615 (boundary 651) may be located outside the outer circumferential edge 722 of the first subzone 710 in the radial direction Dr.

[0141] FIG. 13 is a plan view diagrammatically illustrating the main zone of the second heater element according to the second embodiment. 13, in this example, the multiple main zones 600 of the second heater element 232 have four main zones 601 to 604 aligned in the radial direction Dr. That is, the second heater element 232 is divided into four in the radial direction Dr. The main zones 600 are arranged in the order of main zone 601, main zone 602, main zone 603, and main zone 604 from the center CT2 of the second heater element 232 outward.

[0142] The main zone 601 is circular and centered on a center CT2 in a plan view. The main zone 602 is annular and located outside the main zone 601 and centered on the center CT2 in a plan view. The main zone 603 is annular and located outside the main zone 602 and centered on the center CT2 in a plan view. The main zone 604 is annular and located outside the main zone 603 in a plan view. In this example, the width LM1 in the radial direction Dr of the main zone 601, the width LM2 in the radial direction Dr of the main zone 602, the width LM3 in the radial direction Dr of the main zone 603, and the width LM4 in the radial direction Dr of the main zone 604 are different from each other.

[0143] The main zone 601 and the main zone 602 are adjacent to each other via a boundary 651. That is, the boundary 651 is located between the main zone 601 and the main zone 602. The boundary 651 is a region formed by the outer end of the main zone 601 in the radial direction Dr, the inner end of the main zone 602 in the radial direction Dr, and a gap located between them. The main zone 602 and the main zone 603 are adjacent to each other via a boundary 652. That is, the boundary 652 is located between the main zone 602 and the main zone 603. The boundary 652 is a region formed by the outer end of the main zone 602 in the radial direction Dr, the inner end of the main zone 603 in the radial direction Dr, and a gap located between them. The main zone 603 and the main zone 604 are adjacent to each other via a boundary 653. That is, the boundary 653 is located between the main zone 603 and the main zone 604. The boundary 653 is a region configured from an outer end of the main zone 603 in the radial direction Dr, an inner end of the main zone 604 in the radial direction Dr, and a gap located therebetween. The outer end of the main zone 604 in the radial direction Dr constitutes the outer peripheral edge 232e of the second heater element 232. The boundary 651, the boundary 652, and the boundary 653 can correspond to, for example, either the first boundary 615 or the second boundary 625.

[0144] FIG. 14 is a plan view diagrammatically illustrating a subzone of a first heater element according to a second embodiment. As shown in FIG. 14, in this example, the multiple subzones 700 of the first heater element 231 include a first region 701 consisting of subzones 701a to 701d arranged in the circumferential direction Dc, a second region 702 consisting of subzones 702a to 702h arranged in the circumferential direction Dc, a third region 703 consisting of subzones 703a to 703h arranged in the circumferential direction Dc, and a fourth region 704 consisting of subzones 704a to 704q arranged in the circumferential direction Dc. That is, the second heater element 232 is divided into four in the radial direction Dr. Furthermore, the first region 701 is divided into four in the circumferential direction Dc. The second region 702 and the third region 703 are each divided into eight in the circumferential direction Dc. The fourth region 704 is divided into 16 in the circumferential direction DC. The regions are arranged in the order of a first region 701, a second region 702, a third region 703, and a fourth region 704 from a center CT1 of the first heater element 231 toward the outside.

[0145] The first region 701 is circular and centered on the center CT1 in plan view. The second region 702 is annular and located outside the first region 701 and centered on the center CT1 in plan view. The third region 703 is annular and located outside the second region 702 and centered on the center CT1 in plan view. The fourth region 704 is annular and located outside the third region 703 and centered on the center CT1 in plan view.

[0146] The first area 701 has subzones 701a to 701d. In the first area 701, the subzones 701a to 701d are arranged in the following order clockwise: subzone 701a, subzone 701b, subzone 701c, and subzone 701d. Each of the subzones 701a to 701d constitutes a part of the circular first area 701.

[0147] The second area 702 has subzones 702a to 702h. In the second area 702, the subzones 702a to 702h are arranged in the following order clockwise: subzone 702a, subzone 702b, subzone 702c, subzone 702d, subzone 702e, subzone 702f, subzone 702g, and subzone 702h. The subzone 702a is located outside the subzone 701a. The subzone 702b is located outside the subzone 701a and subzone 701b. The subzone 702c is located outside the subzone 701b. The subzone 702d is located outside the subzone 701b and subzone 701c. The subzone 702e is located outside the subzone 701c. The subzone 702f is located outside the subzone 701c and subzone 701d. Subzone 702g is located outside subzone 701d. Subzone 702h is located outside subzone 701d and subzone 701a. Each of subzones 702a to 702h constitutes a part of second region 702 having an annular shape.

[0148] The third region 703 has subzones 703a to 703h. In the third region 703, the subzones 703a to 703h are arranged in the following order clockwise: subzone 703a, subzone 703b, subzone 703c, subzone 703d, subzone 703e, subzone 703f, subzone 703g, and subzone 703h. The subzone 703a is located outside the subzone 702h and subzone 702a. The subzone 703b is located outside the subzone 702a and subzone 702b. The subzone 703c is located outside the subzone 702b and subzone 702c. The subzone 703d is located outside the subzone 702c and subzone 702d. The subzone 703e is located outside the subzone 702d and subzone 702e. Subzone 703f is located outside of subzone 702e and subzone 702f. Subzone 703g is located outside of subzone 702f and subzone 702g. Subzone 703h is located outside of subzone 702g and subzone 702h. Subzones 703a to 703h each constitute a part of the annular third region 703.

[0149] The fourth region 704 has subzones 704a to 704q. In the fourth region 704, the subzones 704a to 704q are arranged in the following order clockwise: subzone 704a, subzone 704b, subzone 704c, subzone 704d, subzone 704e, subzone 704f, subzone 704g, subzone 704h, subzone 704i, subzone 704j, subzone 704k, subzone 704m, subzone 704n, subzone 704o, subzone 704p, and subzone 704q. The subzone 704a is located outside the subzone 703a. The subzone 704b is located outside the subzones 703a and 703b. The subzone 704c is located outside the subzone 703b. Subzone 704d is located outside subzone 703b and subzone 703c. Subzone 704e is located outside subzone 703c. Subzone 704f is located outside subzone 703c and subzone 703d. Subzone 704g is located outside subzone 703d. Subzone 704h is located outside subzone 703d and subzone 703e. Subzone 704i is located outside subzone 703e. Subzone 704j is located outside subzone 703e and subzone 703f. Subzone 704k is located outside subzone 703f. Subzone 704m is located outside subzone 703f and subzone 703g. Subzone 704n is located outside subzone 703g. Subzone 704o is located outside subzone 703g and subzone 703h. Subzone 704p is located outside subzone 703h. Subzone 704q is located outside subzone 703h and subzone 703a. Subzones 704a to 704q each constitute a part of annular fourth region 704.

[0150] In this example, the width LS1 in the radial direction Dr of the first region 701, the width LS2 in the radial direction Dr of the second region 702, the width LS3 in the radial direction Dr of the third region 703, and the width LS4 in the radial direction Dr of the fourth region 704 are all different.

[0151] Each subzone 700 has an end on the inside in the radial direction Dr or on the outside in the radial direction Dr. In this example, the inside ends of the subzones 701a to 701d in the radial direction Dr are located near the center CT1. A gap is provided between the outside ends of the subzones 701a to 701d in the radial direction Dr and the inside ends of the subzones 702a to 702h in the radial direction Dr. A gap is provided between the outside ends of the subzones 702a to 702h in the radial direction Dr and the inside ends of the subzones 703a to 703h in the radial direction Dr. A gap is provided between the outside ends of the subzones 703a to 703h in the radial direction Dr and the inside ends of the subzones 704a to 704q in the radial direction Dr. The outer ends of the subzones 704a to 704q in the radial direction Dr constitute the outer peripheral edge 231e of the first heater element 231. The inner end and the outer end of each subzone 700 in the radial direction Dr can correspond to, for example, either the first radial end 710a or the second radial end 710b.

[0152] FIG. 15 is a plan view illustrating a schematic positional relationship between a main zone of a second heater element and a sub zone of a first heater element according to a second embodiment. FIG. 16 is a plan view showing a schematic positional relationship between a part of the main zone of the second heater element and a part of the sub-zone of the first heater element according to the second embodiment. 15 and 16 show the positional relationship when the second heater element 232 shown in FIG. 13 and the first heater element 231 shown in FIG. 14 are superimposed and viewed along the Z direction.

[0153] Fig. 16 shows the positional relationship between the main zones 602 and 603 in Fig. 13 and the sub-zone 702g in Fig. 14. Here, an example will be described in which the first main zone 610 is the main zone 602, the second main zone 620 is the main zone 603, the third main zone 630 is the main zone 601 and the main zone 604, the first boundary 615 is the boundary 652, the second boundary 625 is the boundary 651 and the boundary 653, and the first sub-zone 710 is the sub-zone 702g.

[0154] 16, in this example as well, the first radial end 710a (inner peripheral end 721) and the second radial end 710b (outer peripheral end 722) of the first sub-zone 710 do not overlap the first boundary 615 (boundary 652) between the first main zone 610 and the second main zone 620 in the Z direction. The first radial end 710a does not overlap the second boundary 625 (boundary 651) in the Z direction either. The second radial end 710b (outer peripheral end 722) does not overlap the second boundary 625 (boundary 653) in the Z direction either. Alternatively, the first radial end 710a may be the outer circumferential end 722 and the second radial end 710b may be the inner circumferential end 721, the first radial end 710a may not overlap with the first boundary 615 (boundary 652) in the Z direction, and the second radial end 710b may overlap with the first boundary 615 (boundary 652) in the Z direction.

[0155] In this example, the first boundary 615 (boundary 652) does not overlap with the central region 711 of the first subzone 710 in the Z direction. The first boundary 615 (boundary 652) is located between the central region 711 and the inner circumferential end 721 in the radial direction Dr.

[0156] FIG. 17 is a plan view illustrating a schematic positional relationship between another part of the main zone of the second heater element and another part of the sub-zone of the first heater element according to the second embodiment. Figure 17 shows the positional relationship between the main zones 603 and 604 in Figure 13 and the sub-zone 703h in Figure 14. Here, an example will be described in which the first main zone 610 is the main zone 603, the second main zone 620 is the main zone 604, the third main zone 630 is the main zone 602, the first boundary 615 is the boundary 653, the second boundary 625 is the boundary 652, and the first sub-zone 710 is the sub-zone 703h.

[0157] 17, in this example as well, the first radial end 710a (inner circumferential end 721) of the first sub-zone 710 does not overlap in the Z direction with the first boundary 615 (boundary 653) between the first main zone 610 and the second main zone 620. On the other hand, in this example, the second radial end 710b (outer circumferential end 722) of the first sub-zone 710 overlaps in the Z direction with the first boundary 615 (boundary 653).

[0158] In this way, even if the second radial end 710b overlaps in the Z direction with the first boundary 615 (boundary 653) between the first main zone 610 and the second main zone 620, the first radial end 710a is configured not to overlap with the first boundary 615 (boundary 653) in the Z direction. However, in order to further improve the uniformity of the temperature distribution within the surface of the heater section 200, it is preferable that neither the first radial end 710a nor the second radial end 710b overlaps with the first boundary 615 (boundary 653) or the second boundary 625 (652) in the Z direction.

[0159] FIG. 18 is a plan view illustrating a schematic positional relationship between the main zone of the second heater element and the sub zone of the first heater element according to the third embodiment. FIG. 19 is a plan view illustrating a schematic positional relationship between a part of the main zone of the second heater element and a part of the sub-zone of the first heater element according to the third embodiment. Figure 19 shows the positional relationship between the main zones 602 and 603 in Figure 18 and the sub-zone 703a in Figure 18. Here, an example will be described in which the first main zone 610 is the main zone 602, the second main zone 620 is the main zone 603, the third main zone 630 is the main zone 601, the first boundary 615 is the boundary 652, the second boundary 625 is the boundary 651, and the first sub-zone 710 is the sub-zone 703a.

[0160] The main zone 601 and the main zone 602 are adjacent to each other via a boundary 651. That is, the boundary 651 is located between the main zone 601 and the main zone 602. The boundary 651 is a region consisting of the outer end of the main zone 601 in the radial direction Dr, the inner end of the main zone 602 in the radial direction Dr, and a gap located between them. The main zone 602 and the main zone 603 are adjacent to each other via a boundary 652. That is, the boundary 652 is located between the main zone 602 and the main zone 603. The boundary 652 is a region consisting of the outer end of the main zone 602 in the radial direction Dr, the inner end of the main zone 603 in the radial direction Dr, and a gap located between them. The outer end of the main zone 603 in the radial direction Dr constitutes the outer peripheral edge 232e of the second heater element 232. The boundary 651 and the boundary 652 may correspond to, for example, either the first boundary 615 or the second boundary 625.

[0161] 19, in this example, the first subzone 710 is not divided in the circumferential direction Dc. That is, the first subzone 710 does not have a first side end 723 and a second side end 724. In other words, the first subzone 710 is an annular region surrounded by an inner circumferential end 721 and an outer circumferential end 722.

[0162] In this example, the central region 711 of the first subzone 710 is a region between a center line RL2 in the radial direction Dr between the inner circumferential end 721 and the center line RL1, and a center line RL3 in the radial direction Dr between the outer circumferential end 722 and the center line RL1. In other words, the central region 711 is inside the region surrounded by the center lines RL2 and RL3. The center line RL1 is the center line in the radial direction Dr between the inner circumferential end 721 and the outer circumferential end 722.

[0163] In this example, the outer circumferential region 712 of the first subzone 710 is located between a centerline RL2 and an inner circumferential edge 721 and between a centerline RL3 and an outer circumferential edge 722.

[0164] Each subzone 700 has an end on the inside in the radial direction Dr or on the outside in the radial direction Dr. In this example, the subzone 701a does not have an end on the inside in the radial direction Dr. A gap is provided between the outside end of the subzone 701a in the radial direction Dr and the inside end of the subzone 702a in the radial direction Dr. A gap is provided between the outside end of the subzone 702a in the radial direction Dr and the inside end of the subzone 703a in the radial direction Dr. A gap is provided between the outside end of the subzone 703a in the radial direction Dr and the inside end of the subzone 704a in the radial direction Dr. The outside end of the subzone 704a in the radial direction Dr constitutes the outer circumferential edge 231e of the first heater element 231. The inner end and the outer end of each subzone 700 in the radial direction Dr may correspond to, for example, either the first radial end 710a or the second radial end 710b, respectively.

[0165] In this example, the first radial end 710a (inner peripheral end 721) and the second radial end 710b (outer peripheral end 722) of the first sub-zone 710 do not overlap the first boundary 615 (boundary 652) between the first main zone 610 and the second main zone 620 in the Z direction. The first radial end 710a does not overlap the second boundary 625 (boundary 651) in the Z direction either. The second radial end 710b (outer peripheral end 722) does not overlap the outer peripheral edge 232e in the Z direction either. Alternatively, the first radial end 710a may be the outer peripheral end 722 and the second radial end 710b may be the inner peripheral end 721, the first radial end 710a may not overlap the first boundary 615 (boundary 652) in the Z direction, and the second radial end 710b may overlap the first boundary 615 (boundary 652) in the Z direction.

[0166] Also in this example, the first boundary 615 (boundary 652) overlaps with the central region 711 of the first subzone 710 in the Z direction. The first boundary 615 (boundary 652) does not have to overlap with the central region 711 of the first subzone 710 in the Z direction. Also, the first boundary 615 (boundary 652) does not have to overlap with the first subzone 710 in the Z direction. That is, the first boundary 615 (boundary 652) may be located, for example, on the inside of the inner circumferential end 721 of the first subzone 710 in the radial direction Dr. The first boundary 615 (boundary 652) may be located, for example, on the outside of the outer circumferential end 722 of the first subzone 710 in the radial direction Dr.

[0167] FIG. 20 is a plan view diagrammatically illustrating the positional relationship between another part of the main zone of the second heater element and another part of the sub-zone of the first heater element according to the third embodiment. Figure 20 shows the positional relationship between the main zones 601, 602 in Figure 18 and the sub-zone 701a in Figure 18. Here, an example will be described in which the first main zone 610 is the main zone 601, the second main zone 620 is the main zone 602, the first boundary 615 is the boundary 651, and the first sub-zone 710 is the sub-zone 701a.

[0168] As shown in FIG. 20, in this example, the first subzone 710 is a circular region centered on the center CT1 of the first heater element 231 and surrounded by an outer circumferential end 722. That is, the first subzone 710 does not have an inner circumferential end 721, a first side end 723, or a second side end 724. Also, the center 715 of the first subzone 710 coincides with the center CT1 of the first heater element 231. In this example, the first radial end 710a is the outer circumferential end 722. Also, in this example, the first subzone 710 does not have a second radial end 710b.

[0169] In this example, the central region 711 of the first subzone 710 is within a region surrounded by a center line RL1 in a radial direction Dr between a center 715 of the first subzone 710 and an outer peripheral end 722. In other words, the central region 711 is a concentric circle of the first subzone 710, and is a circular region having a radius half that of the first subzone 710.

[0170] In this example, the outer circumferential region 712 of the first subzone 710 is a region located outside the center line RL1 (i.e., opposite the center 715). In other words, the outer circumferential region 712 is located between the center line RL1 and the outer circumferential edge 722.

[0171] In this example too, the first radial end 710a (outer circumferential end 722) of the first sub-zone 710 does not overlap the first boundary 615 (boundary 651) between the first main zone 610 and the second main zone 620 in the Z direction.

[0172] Also, in this example, the first boundary 615 (boundary 651) does not overlap with the central region 711 of the first subzone 710 in the Z direction. The first boundary 615 (boundary 651) may overlap with the central region 711 of the first subzone 710 in the Z direction.

[0173] FIG. 21 is a cross-sectional view that illustrates a wafer processing apparatus according to an embodiment. 21, a wafer processing apparatus 500 according to the embodiment includes a processing vessel 501, an upper electrode 510, and an electrostatic chuck 10. A processing gas inlet 502 for introducing a processing gas into the processing vessel 501 is provided in the ceiling. An exhaust port 503 for decompressing and exhausting the inside of the processing vessel 501 is provided in the bottom plate of the processing vessel 501. A high-frequency power supply 504 is connected to the upper electrode 510 and the electrostatic chuck 10, and a pair of electrodes including the upper electrode 510 and the electrostatic chuck 10 face each other in parallel with a predetermined distance therebetween.

[0174] In the wafer processing apparatus 500, when a high-frequency voltage is applied between the upper electrode 510 and the electrostatic chuck 10, a high-frequency discharge occurs, and the processing gas introduced into the processing vessel 501 is excited and activated by the plasma, thereby processing the processing object W. An example of the processing object W is a semiconductor substrate (wafer). However, the processing object W is not limited to a semiconductor substrate (wafer), and may be, for example, a glass substrate used in a liquid crystal display device.

[0175] The high frequency power supply 504 is electrically connected to the base plate 300 of the electrostatic chuck 10. As described above, the base plate 300 is made of a metal material such as aluminum. That is, the base plate 300 has electrical conductivity. Thus, a high frequency voltage is applied between the upper electrode 410 and the base plate 300.

[0176] In this example, the base plate 300 is electrically connected to the first support plate 210 and the second support plate 270. As a result, in the wafer processing apparatus 500, a high frequency voltage is applied between the first support plate 210 and the upper electrode 510, and between the second support plate 270 and the upper electrode 510.

[0177] In this manner, a high frequency voltage is applied between each of the support plates 210, 270 and the upper electrode 510. This allows the location to which the high frequency voltage is applied to be closer to the processing object W than when the high frequency voltage is applied only between the base plate 300 and the upper electrode 510. This allows, for example, plasma to be generated more efficiently and at a lower potential.

[0178] An apparatus having a configuration like the wafer processing apparatus 500 is generally called a parallel plate type RIE (Reactive Ion Etching) apparatus, but the electrostatic chuck 10 according to the embodiment is not limited to application to this apparatus. For example, the electrostatic chuck 10 can be widely applied to so-called reduced pressure processing apparatuses such as an ECR (Electron Cyclotron Resonance) etching apparatus, an inductively coupled plasma processing apparatus, a helicon wave plasma processing apparatus, a plasma separation type plasma processing apparatus, a surface wave plasma processing apparatus, and a plasma CVD (Chemical Vapor Deposition) apparatus. Such a wafer processing apparatus 500 is used, for example, in the manufacture of semiconductor devices. The wafer processing apparatus 500 is used, for example, as a semiconductor manufacturing apparatus.

[0179] The electrostatic chuck 10 according to the embodiment can also be widely applied to substrate processing apparatuses in which processing or inspection is performed under atmospheric pressure, such as exposure apparatuses and inspection apparatuses. However, in consideration of the high plasma resistance of the electrostatic chuck 10 according to the embodiment, it is preferable to apply the electrostatic chuck 10 to a plasma processing apparatus. Note that, among the configurations of these apparatuses, known configurations can be applied to parts other than the electrostatic chuck 10 according to the embodiment, and therefore the description thereof will be omitted.

[0180] Thus, according to the wafer processing apparatus 500 (semiconductor manufacturing apparatus) of the embodiment, by providing the electrostatic chuck 10 in which at least a part of the first radial end 710a of the first subzone 710 does not overlap with the first boundary 615 of the main zone 600 in the Z direction (i.e., the end of the subzone 700 in the radial direction Dr is disposed so as to be shifted from the boundary of the main zone 600 in the radial direction Dr), it is possible to improve the uniformity of the temperature distribution within the surface of the heater section 200. This makes it possible to improve the uniformity of the temperature distribution within the surface of the processing object W.

[0181] FIG. 22 is an exploded cross-sectional view that illustrates a heater portion according to a modified example of the embodiment. As shown in Fig. 22, the heater section 200A according to the modified embodiment differs from the heater section 200 shown in Fig. 5 in that independent temperature control is performed in each sub-zone (region) 700 of the first heater element 231, and independent temperature control is performed in each main zone 600 of the second heater element 232. Note that a description of the same configuration as the heater section 200 shown in Fig. 5 will be omitted.

[0182] In this example, ten power supply terminals 280a to 280j are provided as the power supply terminal 280. Also, in this example, the bypass layer 250 has ten bypass portions 251a to 251j.

[0183] The first heater element 231 has a first region 701 and a second region 702. The first region 701 and the second region 702 each have a first sub-power supply portion 231a, a second sub-power supply portion 231b, and a sub-heater line 231c.

[0184] The second heater element 232 has a main zone 601, a main zone 602, and a main zone 603. Each of the main zones 601 to 603 has a first main power supply section 232a, a second main power supply section 232b, and a main heater line 232c.

[0185] As indicated by arrows C21 and C22, when power is supplied to the power supply terminal 280a from the outside of the electrostatic chuck 10, a current flows from the power supply terminal 280a to the bypass portion 251a. As indicated by arrows C23 and C24, the current that has flowed to the bypass portion 251a flows from the bypass portion 251a to the first region 701 of the first heater element 231. As indicated by arrows C25 and C26, the current that has flowed to the first region 701 flows from the first region 701 to the bypass portion 251b. More specifically, the current that has flowed to the bypass portion 251a flows to the sub-heater line 231c of the first region 701 via the first sub-power supply portion 231a of the first region 701, and then flows to the bypass portion 251b via the second sub-power supply portion 231b of the first region 701. As indicated by arrows C27 and C28, the current flowing to the bypass portion 251b flows from the bypass portion 251b to the power supply terminal 280b. As indicated by arrow C29, the current flowing to the power supply terminal 280b flows to the outside of the electrostatic chuck 10.

[0186] Similarly, when power is supplied to the power supply terminal 280c from outside the electrostatic chuck 10, current flows in the order of the power supply terminal 280c, the bypass portion 251c, the second region 702 of the first heater element 231, the bypass portion 251d, and the power supply terminal 280d, as shown by arrows C31 to C39.

[0187] Similarly, when power is supplied to the power supply terminal 280e from outside the electrostatic chuck 10, current flows in the order of the power supply terminal 280e, the bypass portion 251e, the main zone 601 of the second heater element 232, the bypass portion 251f, and the power supply terminal 280f, as indicated by arrows C41 to C49.

[0188] Similarly, when power is supplied to the power supply terminal 280g from outside the electrostatic chuck 10, current flows in the order of the power supply terminal 280g, the bypass portion 251g, the main zone 602 of the second heater element 232, the bypass portion 251h, and the power supply terminal 280h, as indicated by arrows C51 to C59.

[0189] Similarly, when power is supplied to the power supply terminal 280i from outside the electrostatic chuck 10, current flows in the order of the power supply terminal 280i, the bypass portion 251i, the main zone 603 of the second heater element 232, the bypass portion 251j, and the power supply terminal 280j, as indicated by arrows C61 to C69.

[0190] For example, by making the voltage applied to power supply terminal 280a different from the voltage applied to power supply terminal 280c, it is possible to make the output of first region 701 different from the output of second region 702. In other words, it is possible to control the output of each subzone (region) 700 independently.

[0191] For example, by differentiating the voltage applied to power supply terminal 280e, the voltage applied to power supply terminal 280g, and the voltage applied to power supply terminal 280i, the output of main zone 601, the output of main zone 602, and the output of main zone 603 can be made different. In other words, the output of each main zone 600 can be controlled independently.

[0192] As described above, according to the embodiments, an electrostatic chuck and a semiconductor manufacturing apparatus are provided that can improve the uniformity of the temperature distribution within the surface of an object to be processed.

[0193] The above describes the embodiments of the present invention. However, the present invention is not limited to these descriptions. Any design modifications made by a person skilled in the art to the above-described embodiments are also included within the scope of the present invention as long as they include the features of the present invention. For example, the shape, dimensions, material, arrangement, installation form, etc. of each element of the electrostatic chuck are not limited to those exemplified, and can be modified as appropriate. Furthermore, the elements of each of the above-described embodiments can be combined to the extent technically possible, and such combinations are also included within the scope of the present invention as long as they include the features of the present invention. [Explanation of symbols]

[0194] 10 electrostatic chuck, 100 ceramic dielectric substrate, 101 first main surface, 102 second main surface, 111 electrode layer (attraction electrode), 113 convex portion, 115 groove, 200, 200A heater portion, 210 first support plate, 211 surface, 220 first insulating layer, 231 first heater element, 231a, 231b first and second sub-power feed portions, 231c sub-heater line, 231e outer periphery, 232 second heater element, 232a, 232b first and second main power feed portions, 232c main heater line, 232e outer periphery, 240 second insulating layer, 245 third insulating layer, 250 bypass layer, 251, 251a to 251j bypass portion, 260 fourth insulating layer, 270 second support plate, 271 surface, 273 holes, 280, 280a to 280j power supply terminals, 300 base plate, 301 communication passage, 303 lower surface, 321 inlet passage, 403 adhesive layer, 410 upper electrode, 500 semiconductor manufacturing apparatus, 501 processing vessel, 502 processing gas inlet, 503 exhaust port, 504 high frequency power source, 510 upper electrode, 600, 601 to 604 main zone, 610 first main zone, 615 first boundary, 620 second main zone, 625 second boundary, 630 third main zone, 651 to 653 boundaries, 700, 701a-701f, 702a-702h, 703a-703h, 704a-704q subzones, 701-704 first-fourth regions, 710 first subzone, 710a, 710b first-second radial ends, 711 central region, 712 outer peripheral region, 715 center, 721 inner peripheral end, 722 outer peripheral end, 723, 724 first-second side ends, CL1-CL3 center lines, CT1, CT2 center, Dc circumferential direction, Dr radial direction, LM1-LM4, LS1-LS4 radial width, RL1-RL3 center lines, W processing object

Claims

1. a ceramic dielectric substrate having a first main surface on which an object to be processed is placed and a second main surface opposite to the first main surface; a base plate supporting the ceramic dielectric substrate; a heater portion for heating the ceramic dielectric substrate; Equipped with The heater section includes a first heater element and a second heater element, The second heater element has a plurality of main zones divided in a radial direction, The first heater element has a plurality of subzones, the number of the sub-zones is greater than the number of the main zones; the plurality of main zones include a first main zone and a second main zone adjacent to the first main zone via a first boundary in a radial direction, The plurality of sub-zones include a first sub-zone that overlaps with at least one of the first main zone and the second main zone in a Z direction perpendicular to the first main surface and has a first radial end that is an end in the radial direction, At least a portion of the first radial end does not overlap the first boundary in the Z direction, The first subzone further has a second radial end located radially inward or outward from the first radial end, An electrostatic chuck, characterized in that at least a portion of the second radial end does not overlap the first boundary in the Z direction.

2. When viewed along the Z direction, the first subzone has a central region located at the center of the first subzone, and an outer peripheral region located outside the central region and including the first radial end and the second radial end, The electrostatic chuck of claim 1 , wherein the first boundary overlaps with the central region in the Z direction.

3. 3. The electrostatic chuck of claim 1, wherein the first heater element generates less heat than the second heater element.

4. 3. The electrostatic chuck according to claim 1, wherein the first heater element has a volume resistivity higher than a volume resistivity of the second heater element.

5. 5. The electrostatic chuck according to claim 1, wherein the heater portion is provided between the ceramic dielectric substrate and the base plate.

6. 5. The electrostatic chuck according to claim 1, wherein the heater portion is provided between the first main surface and the second main surface of the ceramic dielectric substrate.

7. 7. A semiconductor manufacturing device comprising the electrostatic chuck according to claim 1.

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