Selective oxidation in rapid thermal processing (RTP) chambers with active steam generation.

Abstract

Provided herein are embodiments of a gas distribution module for use with a rapid thermal processing (RTP) system and methods of use thereof. In some embodiments, the gas distribution module for use with an RTP chamber includes a first carrier gas line and a first liquid line fluidly coupled to a mixer, the mixer having one or more control valves configured to mix a carrier gas from the first carrier gas line and a liquid from the first liquid line in a desired ratio to form a first mixture, a vaporizer coupled to the mixer and configured to receive the first mixture in a hollow interior space, the vaporizer having a heater configured to vaporize the first mixture, and a first gas supply line disposed between the vaporizer and the RTP chamber to supply the vaporized first mixture to the RTP chamber.

Description

[Technical field]

[0001] TECHNICAL FIELD Embodiments of the present disclosure relate generally to semiconductor processing equipment. [Background technology]

[0002] Silicon oxidation is a fundamental technique in integrated circuit (IC) manufacturing. State-of-the-art integrated circuit manufacturing requires several processes to grow thin films of silicon oxide on silicon or polysilicon structures. In some applications, the oxidation process needs to be selective so that other materials, including metals, are not oxidized. The most common methods for oxidizing silicon rely on thermal processes in an atmosphere of O2, H2O / H2, H2O / O2, O2 / H2, or combinations thereof. The hardware used to provide silicon oxidation processes in IC manufacturing typically consists of a thermal treatment chamber. Steam oxidation processes typically promote oxide growth more quickly than wet and dry oxidation processes. However, conventional steam oxidation processes do not provide good control over oxide growth rate, uniformity, selectivity, and conformality.

[0003] Thus, we have provided an improved apparatus and method for selectively oxidizing non-metals in the presence of metals on a substrate.

[0004] Provided herein are embodiments of a gas distribution module for use with a rapid thermal processing (RTP) system and methods of use thereof. In some embodiments, a gas distribution module for use with a rapid thermal processing (RTP) chamber includes a first carrier gas line and a first liquid line fluidly coupled to a mixer, the mixer having one or more control valves configured to mix a carrier gas from the first carrier gas line and a liquid from the first liquid line in a desired ratio to form a first mixture, a vaporizer coupled to the mixer and configured to receive the first mixture within a hollow interior space, the vaporizer having a heater configured to vaporize the first mixture, and a first gas supply line disposed between the vaporizer and the RTP chamber to supply the vaporized first mixture to the RTP chamber.

[0005] In some embodiments, a rapid thermal processing (RTP) system includes an RTP chamber having a substrate support for supporting a substrate and a radiant heat source for heating the substrate; and a gas distribution module, the gas distribution module including a mixer having one or more control valves configured to mix water and a carrier gas in a desired ratio to form a first mixture; a vaporizer coupled to the mixer and configured to receive the first mixture in a hollow interior space, the vaporizer having a heater configured to vaporize the first mixture into a vapor; a first gas supply line disposed between the vaporizer and the RTP chamber to supply the vaporized first mixture to the RTP chamber; a water supply source coupled to the mixer for supplying water to the mixer; and a carrier gas supply source coupled to the mixer for supplying the carrier gas to the mixer.

[0006] In some embodiments, a method for performing a selective oxidation process on a non-metallic surface includes mixing a carrier gas and a liquid in a mixer in a desired ratio to form a first mixture, flowing the first mixture to a vaporizer to vaporize the first mixture, supplying the vaporized first mixture through a gas supply line to an RTP chamber, exposing a substrate disposed in the RTP chamber to the vaporized first mixture, and performing a selective oxidation process on the substrate at a temperature between about 500° C. and about 1100° C.

[0007] Other and further embodiments of the present disclosure are described below.

[0008] DETAILED DESCRIPTION OF THE DRAWINGS

[0013] Embodiments of the present disclosure, briefly summarized above and described in more detail below, can be understood by reference to exemplary embodiments thereof as illustrated in the accompanying drawings, which, however, depict only typical embodiments of the present disclosure and therefore should not be considered limiting in scope, since the present disclosure is susceptible of other equally effective embodiments. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 shows a schematic diagram of a rapid thermal processing system in accordance with at least some embodiments of the present disclosure. [Diagram 2] FIG. 1 shows a schematic diagram of a rapid thermal processing system in accordance with at least some embodiments of the present disclosure. [Diagram 3] FIG. 1 shows a schematic side view of a rapid thermal processing chamber in accordance with at least some embodiments of the present disclosure. [Figure 4] 1 is a schematic cross-sectional top view of a rapid thermal processing chamber in accordance with at least some embodiments of the present disclosure. [Diagram 5] 1 illustrates a method of performing a selective oxidation process on a non-metallic surface, according to at least some embodiments of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] To facilitate understanding, the same reference numbers have been used, where possible, to designate identical elements that are common to multiple figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0011] The apparatus and methods provided herein relate to a rapid thermal processing (RTP) system that uses one or more vaporization mixtures to facilitate selective oxidation of non-metallic surfaces in an RTP chamber. The RTP system includes a gas distribution module configured to form one or more vaporization mixtures. The gas distribution module generally includes respective mixers and vaporizers for forming one or more vaporization mixtures. In some embodiments, the one or more vaporization mixtures may include a carrier gas, such as hydrogen, mixed with steam. Thus, the RTP system provided herein advantageously allows for direct vapor injection into the RTP chamber. The one or more vaporization mixtures include active gases that can be used for selective oxidation of silicon or densification of metal oxides. The one or more vaporization mixtures may be heated to high temperatures (>500° C.) during processing in the RTP chamber. The RTP chamber may be pressurized to high pressures (>100 Torr) during processing. The gas distribution module controls the composition (e.g., carrier gas to vapor ratio) and flow rate of one or more vapor mixtures delivered to the RTP chamber, providing tuning knobs for oxide growth rate, uniformity, selectivity, and conformality.

[0012] 1 illustrates a schematic diagram of a rapid thermal processing (RTP) system 100 in accordance with at least some embodiments of the present disclosure. The RTP system 100 generally includes an RTP chamber 104 coupled to a gas distribution module 102 for supplying one or more vaporized mixtures to the RTP chamber 104. A liquid source 112 and a carrier gas source 122 are coupled to the gas distribution module 102. In some embodiments, the liquid source 112 includes water, such as deionized water, or any other suitable liquid. In some embodiments, the carrier gas source 122 consists essentially of hydrogen, argon, nitrogen, or deuterium.

[0013] The liquid source 112 is fluidly coupled to the gas distribution module 102 via a first liquid line 114. The carrier gas source 122 is fluidly coupled to the gas distribution module 102 via a first carrier gas line 124. A first mass flow controller 142 (MFC) may be disposed along the first liquid line 114 to control the flow of liquid to the gas distribution module 102. A second MFC 144 may be disposed along the first carrier gas line 124 to control the flow of carrier gas to the gas distribution module 102. In some embodiments, the liquid may be provided at about 1 to about 5 gallons per minute. In some embodiments, the carrier gas may be provided at about 10 to about 30 liters per minute.

[0014] The gas distribution module 102 generally includes a mixer 110 coupled to a first liquid line 114 and a first carrier gas line 124, and a vaporizer 120 coupled to the mixer 110. The mixer 110 is configured to mix a liquid from a liquid source 112 and a carrier gas from a carrier gas source 122 in a desired ratio to form a first mixture. The vaporizer 120 coupled to the mixer 110 is configured to receive the first mixture within the hollow interior space 108. The vaporizer 120 is configured to vaporize the first mixture into a gaseous mixture including, for example, a carrier gas from the carrier gas source 122 and vapor.

[0015] In some embodiments, the mixer 110 includes one or more control valves 116 configured to mix the carrier gas from the first carrier gas line 124 and the liquid from the first liquid line 114 in a desired ratio to form a first mixture. In some embodiments, the mixer 110 includes a mixing block 126 having a first inlet 128 fluidly coupled to the first liquid line 114 and a second inlet 130 coupled to the first carrier gas line 124. In some embodiments, the first inlet 128 and the second inlet 130 extend to a mixing line 132 of the mixer 110. The mixer 110 includes an outlet 134. In some embodiments, the mixing block 126 includes the outlet 134, and the outlet 134 extends from the mixing line 132 to an outer sidewall of the mixing block 126. In some embodiments, an outer sidewall of the mixing block 126 to which the outlet 134 extends is disposed facing the vaporizer 120. In some embodiments, one or more control valves 116 are coupled to the mixing line 132 and configured to control the flow of the first mixture through the outlet 134.

[0016] In some embodiments, the mixer 110 includes one or more heating elements 136. In some embodiments, the one or more heating elements 136 are disposed within the mixing block 126. In some embodiments, the one or more heating elements 136 are disposed within the mixing block 126 below the mixing line 132. In some embodiments, the one or more heating elements 136 are configured to heat the first mixture to a temperature between about 100° C. and about 150° C.

[0017] The vaporizer 120 includes a vaporizer heater 106 configured to vaporize the first mixture, for example, into a vapor. In some embodiments, the vaporizer 120 includes an inlet 138 fluidly coupled to an outlet 134 of the mixer 110. In some embodiments, the inlet 138 can be directly coupled to the outlet 134 to reduce or prevent heat loss from the first mixture as it flows from the mixer 110 to the vaporizer 120. In some embodiments, a conduit can be disposed between the outlet 134 of the mixer 110 and the inlet 138 of the vaporizer 120. In some embodiments, the conduit between the outlet 134 and the inlet 138 can be heated to between about 100° C. and about 150° C.

[0018] In some embodiments, the inlet 138 extends into the hollow interior space 108 of the vaporizer 120. In some embodiments, the vaporizer 120 includes an outlet 140 extending from a side of the hollow interior space 108 opposite the inlet 138. In some embodiments, the vaporizer 120 includes a vaporizer block 115 disposed about the hollow interior space 108. In some embodiments, the hollow interior space 108, the inlet 138, and the outlet 140 are formed in the vaporizer block 115. In some embodiments, the vaporizer heater 106 is disposed in the vaporizer block 115. The vaporizer heater 106 can be configured to heat the first mixture to a temperature between about 120° C. and about 200° C. In some embodiments, the hollow interior space 108 increases in cross-sectional area from the inlet 138 to the outlet 140 to accommodate expansion of the first mixture as it vaporizes.

[0019] An outlet 140 of the vaporizer 120 is fluidly coupled to a first gas supply line 150 disposed between the vaporizer 120 and the RTP chamber 104 for supplying the vaporized first mixture to the RTP chamber 104. In some embodiments, the first gas supply line 150 includes a heater jacket for maintaining the vaporized first mixture at a temperature between about 60° C. and about 120° C.

[0020] As described in more detail below, the RTP chamber 104 generally includes a substrate support 118 for supporting a substrate and a radiant heat source 160 for heating the substrate. The RTP chamber 104 is configured to perform a selective oxidation process via a thermal process without including a plasma source, such as a remote plasma source. The RTP chamber 104 may be configured to heat the substrate to a temperature range of about 500° C. to about 1100° C. during processing. The RTP chamber 104 may be pressurized to a high pressure of about 100 Torr to about 600 Torr during processing.

[0021] FIG. 2 shows a schematic diagram of a rapid thermal processing system 100 according to at least some embodiments of the present disclosure. In some embodiments, a gas distribution module 102 includes multiple mixers and multiple associated vaporizers. Multiple mixers can advantageously allow for different compositions of gaseous mixtures supplied to the RTP chamber 104, different ratios of carrier gas and vapor in the gaseous mixture, and the like. For example, as shown in FIG. 2, the gas distribution module 102 further includes a second mixer 210 configured to mix the liquid from the liquid source 112 and the carrier gas from the carrier gas source 122 in a desired ratio to form a second mixture, and a second vaporizer 220 configured to vaporize the second mixture. The second vaporizer 220 is fluidly coupled to the RTP chamber 104 via a second gas supply line 250 for supplying the vaporized second mixture to the RTP chamber 104. In some embodiments, the second mixer 210 and the second vaporizer 220 can be similar to the mixer 110 and the vaporizer 120 described above with respect to FIG.

[0022] 2, the liquid source 112 and carrier gas source 122 are shared between the mixer 110 and the second mixer 210, allowing the mixer 110 and the second mixer 210 to advantageously provide different carrier gas to liquid ratios for the first and second mixtures to control oxide growth rate, uniformity, selectivity, and conformality. In such an embodiment, a second carrier gas line 224 may extend from the first carrier gas line 124 to the second mixer 210. A second liquid line 214 may extend from the first liquid line 114 to the second mixer 210. In other embodiments, the mixer 110 and the second mixer 210 may be fluidly coupled to separate liquid and carrier gas sources, or the same liquid source but different carrier gas sources, to supply different gaseous mixtures to the RTP chamber 104. For example, the multiple carrier gas sources can provide two different reactive gases, one reactive gas and one purge gas, etc. A third MFC 242 can be disposed along the second liquid line 214 to control the flow of liquid to the second mixer 210. A fourth MFC 244 can be disposed along the second carrier gas line 224 to control the flow of carrier gas to the second mixer 210.

[0023] The first liquid line 114 may include a first control valve 202 upstream of the first MFC 142 to control flow to the first MFC 142. The first carrier gas line 124 may include a second control valve 204 upstream of the second MFC 144 to control flow to the second MFC 144. The second liquid line 214 may include a third control valve 206 upstream of the third MFC 242 to control flow to the third MFC 242. The second carrier gas line 224 may include a fourth control valve 208 upstream of the fourth MFC 244 to control flow to the fourth MFC 244.

[0024] 3 illustrates a schematic side view of an RTP chamber 104 according to at least some embodiments of the present disclosure. The RTP chamber 104 generally includes a chamber body 320 having a first portion 321 and a second portion 323, and a window 322 disposed on the first portion 321 of the chamber body 320. The chamber body 320 and the window 322 define a process space 301. A lamp assembly 316 is mounted on the window 322. The lamp assembly 316 may be the radiant heat source 160 of FIG. 1. The lamp assembly 316 includes a housing 354 and a plurality of openings 352 formed in the housing 354. A plurality of lamps 346 are disposed in the housing 354, with each lamp 346 disposed in a corresponding opening 352. The lamps 346 are connected to a power supply controller 376 via a plurality of electrical sockets 348. During operation, the plurality of lamps 346 emit radiation through the window 322 toward a substrate 332 disposed within the RTP chamber 104 to heat the substrate 332 to a predetermined temperature. The predetermined temperature can be between about 20° C. and about 1,500° C., for example, between about 500° C. and about 1000° C.

[0025] Window 322 is generally made of any material that is resistant to the process environment and transmits the desired radiation. For example, quartz is typically used for window 322 because it transmits infrared radiation. Other suitable materials may include, but are not limited to, sapphire. In a further embodiment, window 322 is optionally coated with an anti-reflective coating or any other suitable filter on one or both sides of window 322.

[0026] A gas supply port 380 is formed in the first portion 321 of the chamber body 320. The gas supply port 380 is fluidly coupled to the first gas supply line 150 for introducing the first mixture into the process space 301. In operation, a vacuum pump 384 evacuates the RTP chamber 104 by pumping through an exhaust port 386 formed in the first portion 221 of the chamber body 320. In some embodiments, a valve 388 disposed between the exhaust port 286 and the vacuum pump 284 may be utilized to control the pressure in the RTP chamber 104. In some embodiments, a second vacuum pump 390 is connected to the lamp assembly 216 to control the pressure in the lamp assembly 216. The pressure in the lamp assembly 316 is controlled by a valve 394.

[0027] In some embodiments, a channel 324 is formed in the chamber body 320, and the rotor 326 is disposed in the channel 324. The channel 324 can be annular. In some embodiments, the channel 324 is located adjacent to the second portion 323 of the chamber body 320. The RTP chamber 104 further includes a rotatable substrate support 118. In some implementations, the substrate support 118 is disposed in the channel 324. In some embodiments, an edge ring 330 is mounted on the substrate support 118 for supporting a substrate 332. In some embodiments, a shield 327 is mounted on the second portion 323 of the chamber body 320 and surrounds the edge ring 330 to provide a rotor cover. The substrate support 118 is made of a material with high thermal resistance, such as black quartz. In some embodiments, the substrate support 118 is cylindrical.

[0028] In some embodiments, a substrate 332, such as a silicon substrate, is placed on the edge ring 330 during operation. In some embodiments, a stator 391 is disposed outside the chamber body 320 in axial alignment with the rotor 326. In some embodiments, the stator 391 is a magnetic stator and the rotor 326 is a magnetic rotor. During operation, the rotor 326 rotates, thereby rotating the substrate support 118, the edge ring 330, and the substrate 332.

[0029] A cooling member 343 may be mounted on the chamber bottom 325 and is in close proximity to the edge ring 330 to cool the edge ring 330. In some embodiments, the cooling member 343 is in direct contact with the chamber bottom 325. The thickness of the edge ring 330 may be over-specified to provide extra thermal mass. Such edge support may act as a heat sink and help avoid overheating at the edge of the substrate 332. The chamber bottom 325 is formed with channels 337 for coolant to flow through. In some embodiments, the coolant is water. The cooling member 343 may be made of a material with high thermal conductivity, such as a metal, for example aluminum. In some embodiments, the cooling member 343 has recesses 333 formed in the surface that contacts the chamber bottom 325. Purge gas may flow from the purge gas source 329 through the chamber bottom 325 and through the recesses 333 in the cooling member 343 to provide convective cooling to the edge ring 330. The purge gas can be helium, nitrogen, or other suitable gas.

[0030] In some embodiments, a reflector 345 rests on the chamber bottom 325 and is surrounded by the cooling member 343. The reflector 345 includes a first plurality of apertures 331 and a second plurality of apertures 334. A plurality of lift pins 336 extend through the second plurality of apertures 334. The chamber bottom 325 includes a first plurality of openings 335 and a second plurality of openings 338. Each of the first plurality of openings 335 is aligned with a corresponding opening of the first plurality of openings 331, and each of the second plurality of openings 338 is aligned with a corresponding opening of the second plurality of openings 334.

[0031] The RTP chamber 104 may further include a detection assembly 368 having a plurality of thermal detectors configured to measure a temperature profile across the substrate 332 through the first plurality of apertures 331. The temperature profile may be transmitted to a power supply controller 376, which controls the power supplied to the lamps 346 in response to the measured temperature profile.

[0032] 4 is a schematic top cross-sectional view of a rapid thermal processing chamber 104 according to at least some embodiments of the present disclosure. The RTP chamber 104 further includes a slit valve 310 for inserting and removing a substrate into and from the interior space of the RTP chamber 104. In some embodiments, an exhaust port 386 is disposed on a side of the RTP chamber 104 opposite the slit valve 310. In some embodiments, the RTP chamber 104 includes a gas supply port 380 in a sidewall of the RTP chamber 104 that is in communication with the first gas supply line 150. In some embodiments, the RTP chamber 104 includes a second gas supply port 404 in a sidewall of the RTP chamber 104 that is in communication with the second gas supply line 250. In some embodiments, the gas supply port 380 and the second gas supply port 404 are disposed on the same sidewall of the RTP chamber 104, as shown in FIG. 4. In some embodiments, the gas supply port 380 is disposed perpendicular to the exhaust port 386.

[0033] FIG. 5 illustrates a method 500 for performing a selective oxidation process on a non-metallic surface, according to at least some embodiments of the present disclosure. For example, a selective oxidation process is performed on a silicon or oxide substrate. At 502, the method includes mixing a carrier gas and a liquid in a desired ratio in a mixer (e.g., mixer 110) to form a first mixture. In some embodiments, the carrier gas is one or more of hydrogen, nitrogen, argon, or deuterium. In some embodiments, the first mixture is heated in the mixer via one or more heating elements (e.g., one or more heating elements 136). The liquid can be, for example, water.

[0034] At 504, the method includes flowing the first mixture to a vaporizer (e.g., vaporizer 120) to vaporize the first mixture. The vaporizer includes a vaporizer heater 106 for vaporizing the first mixture. At 506, the method includes supplying the vaporized first mixture to an RTP chamber (e.g., RTP chamber 104) via a gas supply line (e.g., first gas supply line 150) and exposing a substrate (e.g., substrate 332) disposed in the RTP chamber to the vaporized first mixture to perform a selective oxidation process on the substrate at a temperature between about 500° C. and about 1100° C. In some embodiments, the selective oxidation process selectively oxidizes silicon or densifies aluminum oxide. In some embodiments, the method includes heating the gas supply line to about 60° C. to about 120° C. In some embodiments, the selective oxidation process is performed in the RTP chamber at a pressure between about 100 torr and about 600 torr. In some embodiments, the first mixture is heated continuously from the mixer to the RTP chamber.

[0035] In some embodiments, the method 500 includes mixing a second carrier gas and a second liquid in a desired ratio in a second mixer (e.g., the second mixer 210) to form a second mixture; 2and flowing the mixture into a second vaporizer (e.g., a second vaporizer) to vaporize the second mixture. The vaporized second mixture can be supplied to an RTP chamber via a second gas supply line (e.g., the second gas supply line 250) to perform a selective oxidation process on the substrate.

[0036] In some embodiments, the term "about" as used herein, unless otherwise specified, can be within 15% of the stated value. While the foregoing relates to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof.

Claims

1. 1. A gas distribution module for use with a rapid thermal processing (RTP) chamber, comprising: a first carrier gas line and a first liquid line fluidly coupled to a mixer, the mixer having one or more control valves configured to mix a carrier gas from the first carrier gas line and a liquid from the first liquid line in a desired ratio to form a first mixture; a vaporizer coupled to the mixer and configured to receive the first mixture within a hollow interior space, the vaporizer having a heater configured to vaporize the first mixture; a first gas supply line disposed between the vaporizer and the RTP chamber for supplying the vaporized first mixture to the RTP chamber; A gas distribution module comprising:

2. a second carrier gas line and a second liquid line fluidly coupled to a second mixer, the second mixer configured to mix a second carrier gas from the second carrier gas line and a liquid from the second liquid line in a desired ratio to form a second mixture; a second vaporizer having a hollow interior space and a vaporizer heater configured to vaporize the second mixture; a second gas supply line fluidly coupled to the vaporizer and the RTP chamber for supplying the vaporized second mixture to the RTP chamber; The gas distribution module of claim 1 further comprising:

3. 2. The gas distribution module of claim 1, wherein the mixer includes a mixing block having a first inlet for the first liquid line extending to a mixing line, a second inlet for the first carrier gas line extending to the mixing line, and an outlet for the first mixture extending from the mixing line.

4. The gas distribution module of claim 3 , wherein the mixer includes a heater disposed within the mixing block.

5. 5. The gas distribution module of claim 1, further comprising a first carrier gas source coupled to the first carrier gas line, the first carrier gas source consisting essentially of hydrogen, nitrogen, argon, or deuterium.

6. 5. The gas distribution module of claim 1, wherein the vaporizer includes an inlet extending into the hollow interior space and an outlet extending from the hollow interior space, the hollow interior space having a cross-sectional area that increases from the inlet to the outlet.

7. 5. The gas distribution module of claim 1, wherein the first gas supply line includes a heater jacket configured to maintain the first gas supply line at a temperature of about 60° C. to about 120° C.

8. 1. A rapid thermal processing (RTP) system comprising: an RTP chamber having a substrate support for supporting a substrate and a radiant heat source for heating the substrate; 5. The gas distribution module according to claim 1, wherein the first gas supply line of the gas distribution module is disposed between the vaporizer and the RTP chamber to supply the vaporized first mixture to the RTP chamber; A rapid thermal processing (RTP) system comprising:

9. a water source coupled to the mixer for supplying water to the mixer; a carrier gas supply coupled to the mixer for supplying the carrier gas to the mixer; The RTP system of claim 8 further comprising:

10. 9. The RTP system of claim 8, wherein the RTP chamber includes a gas supply port in a sidewall of the RTP chamber in communication with the first gas supply line.

11. The RTP system of claim 8 , wherein the RTP system does not include a remote plasma source.

12. The RTP system of claim 8 , wherein the first gas supply line includes a heater jacket.

13. 9. The RTP system of claim 8, wherein the vaporizer includes a vaporizer block disposed about the hollow interior space, the heater of the vaporizer being disposed within the vaporizer block.

14. 9. The RTP system of claim 8, wherein the RTP chamber further comprises a slit valve for inserting and removing the substrate into and from an interior space of the RTP chamber, and an exhaust port disposed on a side of the RTP chamber opposite the slit valve.

15. 1. A method for performing a selective oxidation process on a non-metallic surface, comprising: mixing a carrier gas and a liquid in a mixer in a desired ratio to form a first mixture; flowing the first mixture into a vaporizer to vaporize the first mixture; supplying the vaporized first mixture through a gas supply line into an RTP chamber and exposing a substrate disposed in the RTP chamber to the vaporized first mixture to perform a selective oxidation process on the substrate at a temperature between about 500° C. and about 1100° C.; A method comprising:

16. 16. The method of claim 15, wherein the carrier gas is one or more of hydrogen, nitrogen, argon, or deuterium.

17. The method of claim 15, further comprising heating the gas supply line to about 60° C. to about 120° C.

18. The method of claim 15, wherein the selective oxidation process is carried out in the RTP chamber at a pressure between about 100 torr and about 550 torr.

19. mixing a second carrier gas and a second liquid in a desired ratio in a second mixer to form a second mixture; flowing the second mixture to a second vaporizer to vaporize the second mixture; supplying the vaporized second mixture to the RTP chamber via a second gas supply line to perform the selective oxidation process on the substrate; 19. The method of any one of claims 15 to 18, further comprising:

20. 19. The method of any one of claims 15 to 18, wherein the selective oxidation process selectively oxidizes silicon or densifies aluminum oxide.

Images