SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Abstract

To provide a technique advantageous for suppressing adhesion of particles to a substrate.SOLUTION: A substrate processing apparatus includes a processing chamber having a processing room and an exhaust room connected to the processing room, and accommodating a substrate in the processing room having a decompressed atmosphere, a gas supply unit that blows gas having pressure higher than the atmosphere of the processing room onto the substrate in the processing room, and a temperature control unit that adjusts the temperature of the atmosphere in at least one of the processing room and the exhaust room such that the atmosphere in the processing room has a temperature distribution in which the temperature gradually decreases from the vicinity of the substrate toward the exhaust room.SELECTED DRAWING: Figure 4A

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] There is a known technology for removing foreign matter on a substrate by blowing gas onto the substrate. For example, according to the substrate cleaning method disclosed in Patent Document 1, clusters consisting of multiple gas molecules collide with the wafer without ionization, thereby removing foreign matter attached to the substrate. In the device of Patent Document 1, the foreign matter that is removed from the substrate and scattered is attracted by thermophoretic force to a cooling section set at a low temperature and captured there. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2011-171584 A Summary of the Invention [Problem to be solved by the invention]

[0004] In the dry cleaning process of wafers (substrates), many particles may adhere to the wafer when gas is blown onto the outer periphery of the wafer. As is clear from the simulation, one of the reasons for this is that part of the gas blown onto the outer periphery of the wafer (especially the area near the edge) flows toward the space around the wafer, generating a vortex in that space, and the particles are carried by the vortex back to the wafer surface.

[0005] When such cleaning processes are performed in a reduced pressure processing chamber, it is difficult to actively control the airflow in the processing chamber to suppress adhesion of particles to the wafer, since it is not possible to draw air into or exhaust air from the processing chamber. Also, when the wafer moves horizontally in the processing chamber, a large excess space is formed around the wafer, and air currents such as vortexes that guide particles to the wafer are likely to occur in the excess space.

[0006] The present disclosure provides an advantageous technique for suppressing adhesion of particles to a substrate. [Means for solving the problem]

[0007] One aspect of the present disclosure relates to a substrate processing apparatus comprising: a processing chamber having a processing chamber and an exhaust chamber connected to the processing chamber, for accommodating a substrate in the processing chamber having a reduced pressure atmosphere; a gas supply unit that sprays a gas having a higher pressure than the atmosphere in the processing chamber onto the substrate in the processing chamber; and a temperature control unit that adjusts the temperature of the atmosphere in the processing chamber and / or the exhaust chamber so that the atmosphere in the processing chamber has a temperature distribution in which the temperature gradually decreases from the substrate toward the exhaust chamber. Effect of the Invention

[0008] The present disclosure is advantageous in suppressing adhesion of particles to a substrate. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a plan view showing an overall configuration of an example of a substrate processing apparatus. [Diagram 2] FIG. 2 is a diagram showing a configuration of an example of a substrate cleaning apparatus. [Diagram 3] FIG. 3 is a diagram showing an example of the gas nozzle portion. [Figure 4A] FIG. 4A is a diagram illustrating a configuration of an example of the substrate cleaning apparatus according to the first embodiment. [Figure 4B]FIG. 4B is a plan view showing an example of a coolant flow path provided inside the processing bottom wall of the processing chamber shown in FIG. 4A. [Figure 4C] FIG. 4C is a plan view showing an example of a coolant flow path provided inside the processing ceiling wall of the processing chamber shown in FIG. 4A. [Diagram 5] FIG. 5 is a diagram showing a configuration of an example of a substrate cleaning apparatus according to the second embodiment. [Figure 6] FIG. 6 is a diagram showing an example of a configuration of a substrate cleaning apparatus according to the third embodiment. [Figure 7] FIG. 7 is a diagram showing an example of a configuration of a substrate cleaning apparatus according to the fourth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Fig. 1 is a plan view showing an overall configuration of an example of a substrate processing system 10. In Fig. 1, an X direction, a Y direction, and a Z direction are mutually perpendicular, the X direction and the Y direction are horizontal directions, and the Z direction is a height direction (vertical direction).

[0011] The substrate processing system 10 shown in FIG. 1 includes multiple (three) load / unload ports 12, an atmospheric transfer chamber 13, multiple (two) load lock chambers 17, a vacuum transfer chamber 18, multiple (six) substrate processing devices 20, and a control unit 22.

[0012] A carrier (e.g., FOUP: Front-Opening Unified Pod) 11 that accommodates a plurality of substrates W is disposed in each loading / unloading port 12. Each loading / unloading port 12 has a gate door (not shown) that is opened and closed together with the lid of the carrier 11, and the substrates W are loaded and unloaded between the carrier 11 disposed in the loading / unloading port 12 and the atmospheric transfer chamber 13 via the gate door.

[0013] To the atmospheric transfer chamber 13 having an atmosphere of atmospheric pressure (normal pressure), there are connected each load lock chamber 17, an inspection unit 15 which inspects the substrate W, and an alignment unit 16 which adjusts the orientation and eccentricity of the substrate W.

[0014] The inspection unit 15 may, for example, detect the state of foreign matter (including particles) adhering to the substrate W and transmit the detection result to the control unit 22. As an example, the inspection unit 15 can detect the size (particle size) and position of particles on the substrate W.

[0015] A first transfer device 14 capable of releasably supporting the substrate W is provided within the atmospheric transfer chamber 13. The first transfer device 14 transfers the substrate W to and from the carriers 11, the inspection unit 15, the alignment unit 16, and each load lock chamber 17, which are arranged in each loading / unloading port 12. The specific configuration of the first transfer device 14 is not limited. For example, the first transfer device 14 is provided with a multi-joint arm, and is provided so as to be movable in the horizontal direction (XY direction) and the height direction (Z direction), and is provided so as to be rotatable about a vertical axis.

[0016] Each load lock chamber 17 is airtightly connected to the atmospheric transfer chamber 13 via a gate valve (not shown), and the substrate W is transferred in and out between each load lock chamber 17 and the atmospheric transfer chamber 13 via the gate valve. Similarly, each load lock chamber 17 is airtightly connected to the vacuum transfer chamber 18 via a gate valve (not shown), and the substrate W is transferred in and out between each load lock chamber 17 and the vacuum transfer chamber 18 via the gate valve. Each load lock chamber 17 is provided with a vacuum pump and a leak valve (not shown) that can switch the atmospheric pressure in each load lock chamber 17 between atmospheric pressure and vacuum pressure.

[0017] A plurality of substrate processing apparatuses 20 are airtightly connected to the vacuum transfer chamber 18 having a vacuum pressure atmosphere. At least one of these substrate processing apparatuses 20 is configured as a substrate cleaning apparatus 30 described below.

[0018] There is no limitation on the specific configuration and processing contents of the other substrate processing apparatus 20. For example, the other substrate processing apparatus 20 may be configured as a vacuum processing module that performs a CVD (Chemical Vapor Deposition) process or a sputtering process for forming a film including circuit wiring on a wafer W on which grooves and via holes for forming a circuit pattern are formed.

[0019] A second transfer device 19 capable of releasably supporting the substrate W is provided within the vacuum transfer chamber 18. The second transfer device 19 transfers the substrate W to and from each load lock chamber 17 and each substrate processing apparatus 20 (including the substrate cleaning apparatus 30). The specific configuration of the second transfer device 19 is not limited. For example, the second transfer device 19 is provided with a multi-joint arm, and is provided so as to be movable in the horizontal and vertical directions and rotatable about a vertical axis.

[0020] The control unit 22 appropriately controls various devices included in the substrate processing system 10. The substrate processing system 10, under the control of the control unit 22, transports the substrate W and performs various processes on the substrate W.

[0021] Fig. 2 is a diagram showing an example of the configuration of the substrate cleaning apparatus 30. In Fig. 2, the inside of a processing chamber 31 is shown.

[0022] The substrate cleaning apparatus 30 shown in FIG. 2 includes a processing chamber 31, a holding unit 40, a gas supply unit 36, and an exhaust unit 44.

[0023] The processing chamber 31 has a partition wall 35 that airtightly partitions the processing chamber 32 and the exhaust chamber 33. The partition wall 35 has a processing ceiling wall 35a that partitions the processing chamber 32 above the processing chamber 32, a processing side wall 35b that partitions the processing chamber 32 on the sides of the processing chamber 32, and a processing bottom wall 35c that partitions the processing chamber 32 below the processing chamber 32. The partition wall 35 in this example further has an exhaust wall 35d that partitions the exhaust chamber 33 located below the processing chamber 32.

[0024] The processing chamber 32 has a reduced pressure atmosphere (ie, an atmosphere at a pressure (vacuum pressure) lower than atmospheric pressure).

[0025] The exhaust chamber 33 is connected to the processing chamber 32 and guides the gas flowing in from the processing chamber 32 toward the exhaust device 44 .

[0026] Exhaust device 44 is a device that exhausts gas within processing chamber 31 (processing chamber 32 and exhaust chamber 33) to the outside of processing chamber 31. Exhaust device 44 in this example has a pressure adjustment unit (e.g., a butterfly valve) 45 that adjusts the inflow of gas from exhaust chamber 33, and a vacuum pump 47 connected to pressure adjustment unit 45 via exhaust path 46.

[0027] A holder 40 is installed in the processing chamber 32, and the substrate W is accommodated in the processing chamber 32 while being supported by the holder 40. The holder 40 holds the substrate W in the processing chamber 32 so that it can rotate.

[0028] 2 includes a mounting table 41 on which the substrate W is placed, and a table drive unit 42 that supports the mounting table 41. The mounting table 41 fixedly supports the substrate W by a mechanical chuck, a vacuum chuck, or another method. Under the control of the control unit 22, the table drive unit 42 moves the mounting table 41 in the horizontal direction (particularly the X direction and the Y direction) and the height direction (the Z direction), and rotates the mounting table 41 about a vertical axis.

[0029] The substrate W on the mounting table 41 moves together with the mounting table 41 and rotates together with the mounting table 41 .

[0030] The substrate W is loaded into and unloaded from the processing chamber 31 via a loading / unloading port 34 that the processing chamber 31 (the processing side wall portion 35b in the example shown in FIG. 2) has.

[0031] The loading / unloading port 34 is opened and closed by a gate valve 49 driven under the control of the control unit 22. While the substrate W is being loaded or unloaded into or from the processing chamber 31, the loading / unloading port 34 is opened by the gate valve 49. On the other hand, while the substrate W is not being loaded or unloaded into or from the processing chamber 31, the loading / unloading port 34 is airtightly closed by the gate valve 49. Therefore, while the substrate W on the mounting table 41 is being cleaned using gas ejected from the gas supply unit 36 ​​as described below, the loading / unloading port 34 is closed by the gate valve 49 and the processing chamber 32 is sealed.

[0032] The gas supply unit 36 ​​sprays a gas having a pressure higher than the atmosphere in the processing chamber 32 onto the substrate W placed in the processing chamber 32 .

[0033] The gas supply unit 36 ​​shown in FIG. 2 includes a gas supply adjustment unit 37 that is driven under the control of the control unit 22, and a gas nozzle unit 39 that sprays gas delivered from the gas supply adjustment unit 37 via gas supply piping 38 toward the inside of the processing chamber 31 (particularly the processing chamber 32).

[0034] The gas supply adjustment unit 37 can adjust the amount, pressure, temperature, and other conditions of the gas sent toward the gas nozzle unit 39. For example, while the atmosphere in the processing chamber 32 is set to a vacuum atmosphere of 0.1 to 100 Pa, the gas from the gas nozzle unit 39 can be sprayed onto the substrate W at a pressure of 0.3 to 5.0 MPa and a temperature of about -100°C.

[0035] The composition of the gas discharged from the gas nozzle portion 39 is not limited, and for example, a mixed gas of hydrogen and carbon dioxide may be discharged from the gas nozzle portion 39 .

[0036] Fig. 3 is a diagram showing an example of the gas nozzle section 39. Fig. 3 shows the state inside the gas nozzle section 39 (particularly the conceptual state of the gas).

[0037] The gas supply unit 36 ​​(particularly the gas nozzle unit 39) in this example sprays gas clusters (i.e., gas clusters 100) onto the substrate W on the mounting table 41. The gas clusters 100 are aggregates of a plurality of gas molecules (gas atoms) 101, and are formed when the plurality of gas molecules (gas atoms) 101 are bonded together by van der Waals forces.

[0038] 3 separates a pressure chamber 55 into which gas molecules 101 flow from the gas supply pipe 38, and a diffusion section 57 connected to the pressure chamber 55 via an orifice section 56. The diffusion section 57 has a diameter that gradually increases as it moves downward from the orifice section 56 (i.e., as it approaches the substrate W on the mounting table 41). The diameter of the orifice section 56 is smaller than the diameter of the pressure chamber 55 and equal to or smaller than the diameter of the diffusion section 57, and the orifice section 56 has a diameter of, for example, about 0.1 mm to 1 mm.

[0039] Gas molecules 101 supplied from the gas supply pipe 38 to the gas nozzle section 39 undergo the processes of adiabatic expansion, cooling condensation and clustering as they pass through the pressure chamber 55, the orifice section 56, the diffusion section 57 and the processing chamber 32, becoming gas clusters 100.

[0040] The gas clusters 100 thus discharged from the gas nozzle portion 39 proceed toward the substrate W at a pressure higher than the atmospheric pressure of the processing chamber 32, and by colliding with the substrate W, act as a cleaning gas that removes foreign matter (particles) on the substrate W from the substrate W.

[0041] When the gas clusters 100 collide with the substrate W, the impact acts on them to cause them to move along the surface of the substrate W, resulting in the foreign matter on the substrate W being detached from the surface of the substrate W and blown off to the side or diagonally upward. Even if the gas clusters 100 do not directly collide with the foreign matter on the substrate W, the foreign matter on the substrate W is detached from the surface of the substrate W and blown off by the gas clusters 100 that collide with the substrate W and move along the surface of the substrate W.

[0042] The irradiation angle θ of the gas cluster 100 with respect to the substrate W is not limited and may be, for example, in the range of 90 degrees ±15 degrees. The irradiation angle θ of the gas cluster 100 with respect to the substrate W can be determined, for example, based on the central axis L extending in the length direction of the gas nozzle portion 39 (i.e., the main traveling direction of the gas (gas cluster 100) discharged from the gas nozzle portion 39).

[0043] In this embodiment, the above-mentioned gas nozzle portion 39 is fixedly attached to the processing chamber 31 (the processing ceiling wall portion 35a in the embodiment shown in FIG. 2).

[0044] Under the control of the control unit 22, the holding unit 40 rotates and moves the substrate W horizontally, causing the substrate W and the gas nozzle unit 39 to move horizontally relative to each other, and the gas ejected from the substrate cleaning device 30 is sprayed onto the entire processing surface (upper surface) of the substrate W.

[0045] [Thermophoresis] The substrate cleaning apparatus 30 further includes a temperature adjusting section. The temperature adjusting section may have any configuration and is not shown in Fig. 2. Typical examples of the temperature adjusting section will be described later (see Figs. 4A to 7).

[0046] The temperature adjustment unit adjusts the temperature of at least one of the atmospheres of the processing chamber 32 and the exhaust chamber 33 so that the atmosphere in the processing chamber 32 has a temperature distribution (temperature gradient) in which the temperature gradually decreases from the vicinity of the substrate W toward the exhaust chamber 33. In other words, the temperature adjustment unit adjusts the temperature of at least one of the atmospheres of the processing chamber 32 and the exhaust chamber 33 so that the movement of particles in the processing chamber 32 to the exhaust chamber 33 by thermophoresis is promoted.

[0047] In general, when a minute particle exists in a field with a temperature gradient, the particle is subjected to a force toward the lower temperature side and moves from the higher temperature side to the lower temperature side. This type of particle behavior is called thermophoresis.

[0048] In thermophoresis, the momentum of a particle from the hotter gas is greater than the momentum of the particle from the colder gas, and as a result, a force (i.e., thermophoretic force) acts on the particle from the hotter gas to the colder gas. The terminal velocity of a particle moving due to thermophoresis is called the thermophoretic velocity.

[0049] Therefore, when a particle moves in an atmosphere having a uniform temperature without a temperature gradient, the particle moves straight without thermophoresis. On the other hand, when a particle moves in an atmosphere having a large temperature gradient, the particle advances while being subjected to a force toward the low temperature side due to thermophoresis.

[0050] The effect of thermophoresis tends to be greater as the particle size becomes smaller. The effect of thermophoresis also tends to be greater when the particles travel through an atmosphere that is no longer regarded as a continuous gas (specifically, an atmosphere that is reduced in pressure and placed in a rarefied gas state). Therefore, by reducing the pressure of the atmosphere in the processing chamber 32 and providing a temperature gradient in the atmosphere, the effect of thermophoresis acting on the particles in the atmosphere increases, making it possible to control the movement of the particles.

[0051] Therefore, by adjusting the temperature of the atmosphere in the processing chamber 32 and / or the exhaust chamber 33 so that the temperature control unit has a temperature distribution in which the temperature gradually decreases from the vicinity of the substrate W toward the exhaust chamber 33, it is possible to guide the particles in the processing chamber 32 to the exhaust chamber 33 by thermophoresis. In particular, by setting the atmospheric temperature of the exhaust chamber 33 lower than the atmospheric temperature of the processing chamber 32, the particles in the processing chamber 32 tend to move toward the exhaust chamber 33 under the influence of thermophoresis.

[0052] As an example, while the atmosphere in the processing chamber 32 is kept in the range of 0 Pa to 100 Pa, the atmospheric temperature in the vicinity of the substrate W in the processing chamber 32 may be set to 10 to 20° C., and the atmospheric temperature in the exhaust chamber 33 may be set to about −50° C. In this case, the processing chamber 32 has a temperature distribution in which the temperature gradually decreases from the vicinity of the substrate W toward the exhaust chamber 33, so that particles floating in the processing chamber 32 can be effectively guided toward the exhaust chamber 33 by thermophoresis.

[0053] The substrate cleaning method (substrate processing method) using the above-mentioned substrate cleaning apparatus 30 is performed, for example, as follows.

[0054] First, the temperature of the atmosphere in at least one of the processing chamber 32 and the exhaust chamber 33 is adjusted so that the reduced pressure atmosphere in the processing chamber 32 has a temperature distribution in which the temperature gradually decreases from the vicinity of the substrate W toward the exhaust chamber 33 (atmosphere temperature adjustment process).

[0055] Then, while maintaining this temperature distribution, gas (gas clusters 100) having a pressure higher than the atmosphere in the processing chamber 32 is sprayed from the gas nozzle portion 39 onto the substrate W placed in the processing chamber 32 (gas spraying step).

[0056] As an example, the substrate W is moved from a home position in the processing chamber 32 to a processing position by the holding part 40, and the substrate W is rotated at the processing position by the holding part 40. Then, at the processing position, gas (gas clusters 100) is ejected from the gas nozzle part 39 while the substrate W is horizontally moved by the holding part 40, and the gas is sprayed onto the entire surface (upper surface) of the rotating substrate W, thereby cleaning the substrate W.

[0057] The gas from the gas nozzle unit 39 is sprayed onto the substrate W so as to scan the surface of the substrate W. As an example, the position at which the gas from the gas nozzle unit 39 is sprayed onto the substrate W moves from the center to the edge of the surface of the substrate W, and then returns from the edge to the center of the surface of the substrate W, thereby effectively removing foreign matter from the entire surface of the substrate W.

[0058] According to the above-described substrate cleaning method, in a state in which the particles in the processing chamber 32 are guided toward the exhaust chamber 33 by thermophoresis, a high-pressure gas for removing foreign matter from the substrate W is sprayed onto the substrate W. Therefore, it is possible to prevent the particles removed from the substrate W from adhering to the substrate W again.

[0059] In particular, by guiding the particles to exhaust chamber 33, the particles can be exhausted to the outside of processing chamber 31 together with the gas (including the gas ejected from gas nozzle portion 39) sent from processing chamber 32 to exhaust chamber 33. As a result, the number of particles remaining in processing chamber 31 can be reduced, and the inside of processing chamber 31 can be kept clean.

[0060] Next, an exemplary embodiment of the substrate cleaning apparatus 30 will be described.

[0061] The substrate cleaning apparatus 30 in each embodiment described below is provided as part of the substrate processing system 10 shown in FIG. 1, but can also be applied to apparatuses other than the substrate processing system 10 shown in FIG. 1 and to methods other than the substrate cleaning method described above.

[0062] [First embodiment] Fig. 4A is a diagram showing an example of the configuration of the substrate cleaning apparatus 30 according to the first embodiment. Fig. 4A shows the inside of the processing chamber 31. Fig. 4B is a plan view showing an example of the coolant flow path 60 provided inside the processing bottom wall portion 35c of the processing chamber 31 shown in Fig. 4A. Fig. 4C is a plan view showing an example of the coolant flow path 60 provided inside the processing ceiling wall portion 35a of the processing chamber 31 shown in Fig. 4A.

[0063] The substrate cleaning apparatus 30 of this embodiment includes a coolant passage 60 extending inside the partition wall portion 35 .

[0064] The refrigerant fluid flows into the refrigerant flow passage 60 at a position relatively close to the exhaust chamber 33, and flows out of the refrigerant flow passage 60 at a position relatively far from the exhaust chamber 33. Any fluid (gas and / or liquid) can be used as the refrigerant fluid, and for example, liquid nitrogen or pure water (DIW: de-ionized water) can be used as the refrigerant fluid.

[0065] In the substrate cleaning apparatus 30 shown in FIGS. 4A to 4C, one continuously connected coolant flow path 60 extends inside the processing ceiling wall portion 35a, the processing side wall portion 35b, the processing bottom wall portion 35c, and the exhaust wall portion 35d.

[0066] An inlet of the refrigerant flow path 60, to which the refrigerant fluid is supplied from the refrigerant supply and recovery unit 63 via the refrigerant supply piping 61, is provided in the exhaust wall 35d. On the other hand, an outlet of the refrigerant flow path 60, from which the refrigerant fluid is discharged toward the refrigerant supply and recovery unit 63 via the refrigerant discharge piping 62, is provided in the treatment ceiling wall 35a.

[0067] The refrigerant fluid supplied to the refrigerant flow path 60 from the refrigerant supply and recovery section 63 via the refrigerant supply piping 61 passes sequentially through the exhaust wall section 35d, the processing bottom wall section 35c, the processing side wall section 35b and the processing ceiling wall section 35a, and is then recovered in the refrigerant supply and recovery section 63 via the refrigerant discharge piping 62.

[0068] In Fig. 4B, the reference symbol "V1" indicates a portion of the refrigerant flow passage 60 provided in the treatment bottom wall portion 35c to which the refrigerant flow passage 60 provided in the exhaust wall portion 35d is connected, and the reference symbol "V2" indicates a portion of the refrigerant flow passage 60 provided in the treatment side wall portion 35b is connected. In Fig. 4C, the reference symbol "V3" indicates a portion of the refrigerant flow passage 60 provided in the treatment ceiling wall portion 35a to which the refrigerant flow passage 60 provided in the treatment side wall portion 35b is connected, and the reference symbol "V4" indicates a portion to which the refrigerant discharge pipe 62 is connected.

[0069] The supply position of the refrigerant fluid to the refrigerant flow passage 60 and the discharge position of the refrigerant fluid from the refrigerant flow passage 60 are not limited.

[0070] For example, by supplying the coolant fluid to the coolant flow passage 60 at a position closer to the exhaust chamber 33 than the substrate W on the mounting table 41, it is possible to cool the atmosphere in the processing chamber 32 to have a temperature distribution in which the temperature gradually decreases from the vicinity of the substrate W toward the exhaust chamber 33. In addition, by discharging the coolant fluid from the coolant flow passage 60 closer to the substrate W on the mounting table 41 than the exhaust chamber 33, it is possible to cool the atmosphere in the processing chamber 32 to have a temperature distribution in which the temperature gradually decreases from the vicinity of the substrate W toward the exhaust chamber 33.

[0071] The refrigerant fluid in the refrigerant flow path 60 gradually increases in temperature as it flows while cooling the partition wall 35, so that the temperature of the refrigerant fluid discharged from the refrigerant flow path 60 is higher than the temperature of the refrigerant fluid supplied to the refrigerant flow path 60. Therefore, the more upstream the portion of the partition wall 35, the lower the temperature is cooled, and the more downstream the portion, the higher the temperature is cooled. The terms "upstream" and "downstream" used here are based on the flow of the refrigerant fluid in the refrigerant flow path 60.

[0072] Therefore, the refrigerant fluid in the refrigerant flow path 60 makes the temperature of the exhaust wall portion 35d lower than the temperature of the processing side wall portion 35b, and makes the temperature of the processing side wall portion 35b lower than the temperature of the processing ceiling wall portion 35a. Also, the refrigerant fluid in the refrigerant flow path 60 makes the temperature of the processing bottom wall portion 35c higher than the temperature of the exhaust wall portion 35d, and lower than the temperature of the processing side wall portion 35b.

[0073] As a result, the atmosphere in the processing chamber 32 is cooled to have a temperature distribution in which the temperature gradually decreases from the vicinity of the substrate W toward the exhaust chamber 33, and the atmosphere in the exhaust chamber 33 is cooled to have a temperature lower than the atmospheric temperature of the processing chamber 32.

[0074] Under the control of the control unit 22 (see FIG. 1), the coolant supply and recovery unit 63 cools the coolant fluid recovered via the coolant supply and recovery unit 63 to a desired temperature, and then supplies it to the coolant flow path 60 via the coolant supply piping 61. The temperature of the coolant fluid supplied from the coolant supply and recovery unit 63 to the coolant flow path 60 is not limited, but the coolant fluid supplied to the coolant flow path 60 has a temperature that allows the atmospheres of the processing chamber 32 and the exhaust chamber 33 to be cooled to have a desired temperature distribution (temperature gradient).

[0075] For example, the temperature of the coolant fluid supplied to the coolant flow path 60 may be determined so that the coolant fluid flowing from the coolant flow path 60 to the coolant discharge pipe 62 has a temperature lower than the ambient temperature of the processing chamber 31 (e.g., room temperature (5°C to 35°C)). Furthermore, the temperature of the coolant fluid supplied to the coolant flow path 60 may be determined so that the ambient temperature of the processing chamber 32 is equal to or lower than the temperature of the substrate W on the mounting table 41.

[0076] There is no limitation on the timing at which the coolant supply and recovery unit 63 starts supplying the coolant fluid to the coolant flow path 60. The supply of the coolant fluid to the coolant flow path 60 may be started, for example, in response to the timing at which the substrate W to be processed is loaded into the processing chamber 32 (for example, before the substrate W is loaded into the processing chamber 32), or may be performed at all times regardless of the timing.

[0077] Other configurations of the substrate cleaning apparatus 30 shown in FIGS. 4A to 4C are similar to those of the substrate cleaning apparatus 30 shown in FIG. 2 described above.

[0078] As described above, the temperature adjustment unit of this embodiment includes the coolant flow path 60 that functions as an internal temperature adjuster provided inside the partition wall 35, and the coolant fluid that flows through the coolant flow path 60, and adjusts the temperature of the atmosphere by cooling the atmosphere in the processing chamber 32 and the exhaust chamber 33 via the partition wall 35. As a result, the atmosphere in the processing chamber 32 is cooled to have a temperature distribution in which the temperature gradually decreases from the vicinity of the substrate W toward the exhaust chamber 33, and particles floating in the processing chamber 32 can be guided to the exhaust chamber 33 by thermophoresis.

[0079] [Second embodiment] In this embodiment, elements that are the same as or correspond to those in the above-described first embodiment are given the same reference numerals, and detailed description thereof will be omitted.

[0080] FIG. 5 is a diagram showing an example of a configuration of a substrate cleaning apparatus 30 according to the second embodiment.

[0081] The temperature adjustment unit of this embodiment has a refrigerant flow path as an internal temperature regulator provided inside the partition wall portion 35 of the processing chamber 31, similar to the first embodiment described above, but has multiple refrigerant flow paths 60a, 60b, 60c that are provided independently of each other.

[0082] That is, the internal temperature regulator of this embodiment has a first refrigerant flow path 60a provided at a position relatively close to the exhaust chamber 33, and a second refrigerant flow path 60b provided independently of the first refrigerant flow path 60a at a position relatively far from the exhaust chamber 33. The temperature of the refrigerant fluid flowing into the first refrigerant flow path 60a is lower than the temperature of the refrigerant fluid flowing into the second refrigerant flow path 60b.

[0083] The internal temperature regulator shown in Figure 5 has a first refrigerant flow path 60a provided in the exhaust wall portion 35d and the processing bottom wall portion 35c, a second refrigerant flow path 60b provided in the processing side wall portion 35b, and a third refrigerant flow path 60c provided in the processing ceiling wall portion 35a.

[0084] The refrigerant fluid supplied from the first refrigerant supply recovery section 63a to the first refrigerant flow path 60a through the first refrigerant supply pipe 61a passes through the exhaust wall section 35d and the processing bottom wall section 35c in order, and is then recovered in the first refrigerant supply recovery section 63a through the first refrigerant discharge pipe 62a. The refrigerant fluid supplied from the second refrigerant supply recovery section 63b to the second refrigerant flow path 60b through the second refrigerant supply pipe 61b passes through the processing side wall section 35b, and is then recovered in the second refrigerant supply recovery section 63b through the second refrigerant discharge pipe 62b. The refrigerant fluid supplied from the third refrigerant supply recovery section 63c to the third refrigerant flow path 60c through the third refrigerant supply pipe 61c passes through the processing ceiling wall section 35a, and is then recovered in the third refrigerant supply recovery section 63c through the third refrigerant discharge pipe 62c.

[0085] The temperature Ta(in) of the refrigerant fluid supplied to the first refrigerant flow path 60a is lower than the temperature Tb(in) of the refrigerant fluid supplied to the second refrigerant flow path 60b. The temperature Tb(in) of the refrigerant fluid supplied to the second refrigerant flow path 60b is also lower than the temperature Tc(in) of the refrigerant fluid supplied to the third refrigerant flow path 60c.

[0086] More specifically, the temperature Ta of the refrigerant fluid flowing through the first refrigerant flow path 60a is lower than the temperature Tb of the refrigerant fluid flowing through the second refrigerant flow path 60b. The temperature Tb of the refrigerant fluid flowing through the second refrigerant flow path 60b is also lower than the temperature Tc of the refrigerant fluid flowing through the third refrigerant flow path 60c.

[0087] As a result, the temperature Ta(out) of the refrigerant fluid discharged from the first refrigerant flow path 60a is lower than the temperature Tb(in) of the refrigerant fluid flowing into the second refrigerant flow path 60b. The temperature Tb(out) of the refrigerant fluid discharged from the second refrigerant flow path 60b is also lower than the temperature Tc(in) of the refrigerant fluid flowing into the third refrigerant flow path 60c.

[0088] In this way, the first refrigerant supply and recovery unit 63a to the third refrigerant supply and recovery unit 63c adjust the temperature of the refrigerant fluid supplied to the first refrigerant flow path 60a to the third refrigerant flow path 60c under the control of the control unit 22 (see FIG. 1) so that the following relationship is satisfied.

[0089] Ta(in) <Tb(in)<Tc(in) Ta <Tb<Tc Ta(out) <Tb(in) Tb(out) <Tc(in)

[0090] Other configurations of the substrate cleaning apparatus 30 shown in FIG. 5 are similar to those of the substrate cleaning apparatus 30 shown in FIG. 4A described above.

[0091] As described above, in this embodiment, the partition wall 35 of the processing chamber 31 is divided into a plurality of areas, and the temperature of each area is independently adjusted by a refrigerant fluid having a different temperature. This allows the temperature of the partition wall 35 to be controlled on an area-by-area basis, and in the example shown in Fig. 5, the temperature of the partition wall 35 is adjusted so that "temperature of the exhaust wall 35d < temperature of the processing bottom wall 35c < temperature of the processing side wall 35b < temperature of the processing ceiling wall 35a" is satisfied.

[0092] As a result, the atmosphere in the processing chamber 32 is cooled to have a temperature distribution (temperature gradient) in which the temperature gradually decreases from the vicinity of the substrate W toward the exhaust chamber 33, and particles floating in the processing chamber 32 can be guided to the exhaust chamber 33 by thermophoresis.

[0093] [Third embodiment] In this embodiment, elements that are the same as or correspond to those in the first and second embodiments described above are given the same reference numerals, and detailed descriptions thereof will be omitted.

[0094] FIG. 6 is a diagram showing an example of the configuration of a substrate cleaning apparatus 30 according to the third embodiment.

[0095] The temperature control section of this embodiment has an external temperature control device 65 provided outside the partition wall portion 35 of the processing chamber 31, and in particular, a cooling section 65a that cools the atmosphere inside the processing chamber 31 through the partition wall portion 35 is provided as the external temperature control device 65.

[0096] 6, a cooling unit 65a is attached to the outer surface of the processing ceiling wall portion 35a, the outer surface of the processing side wall portion 35b, the outer surface of the processing bottom wall portion 35c, and the outer surface of the exhaust wall portion 35d. A refrigerant flow path 60 through which a refrigerant fluid flows is provided inside the cooling unit 65a.

[0097] The refrigerant flow path 60 provided in the cooling unit 65a may have any configuration, and may be configured as a single flow path as a whole (see FIG. 4A), or may have multiple flow paths independent of each other (see FIG. 5). In addition, a temperature-adjusted refrigerant fluid is supplied to the refrigerant flow path 60 in any form according to the configuration of the refrigerant flow path 60.

[0098] In the example shown in FIG. 6, the refrigerant flow path 60 is not provided inside the partition wall portion .

[0099] Other configurations of the substrate cleaning apparatus 30 shown in FIG. 6 are similar to those of the substrate cleaning apparatus 30 shown in FIG. 4A described above.

[0100] In this embodiment, the partition wall 35 of the processing chamber 31 is cooled from the outside by the external temperature regulator 65. In the example shown in Fig. 6, the temperature of the partition wall 35 is adjusted by the external temperature regulator 65 so that "temperature of the exhaust wall 35d<temperature of the processing bottom wall 35c<temperature of the processing side wall 35b<temperature of the processing ceiling wall 35a" is satisfied.

[0101] As a result, the atmosphere in the processing chamber 32 is cooled to have a temperature distribution (temperature gradient) in which the temperature gradually decreases from the vicinity of the substrate W toward the exhaust chamber 33, and particles floating in the processing chamber 32 can be guided to the exhaust chamber 33 by thermophoresis.

[0102] [Fourth embodiment] In this embodiment, elements that are the same as or correspond to those in the first to third embodiments described above are given the same reference numerals, and detailed description thereof will be omitted.

[0103] FIG. 7 is a diagram showing an example of a configuration of a substrate cleaning apparatus 30 according to the fourth embodiment.

[0104] Similar to the third embodiment described above, the temperature regulator of this embodiment also has an external temperature regulator 65 provided outside the partition wall 35 of the processing chamber 31. However, in this embodiment, a heating unit 65b that heats the atmosphere in the processing chamber 31 through the partition wall 35 is provided as the external temperature regulator 65.

[0105] In the substrate cleaning apparatus 30 shown in FIG. 7, the above-mentioned cooling section 65a is attached to the outer surface of the processing side wall section 35b, the outer surface of the processing bottom wall section 35c, and the outer surface of the exhaust wall section 35d, while the heating section 65b is attached to the outer surface of the processing ceiling wall section 35a.

[0106] Other configurations of the substrate cleaning apparatus 30 shown in FIG. 7 are similar to those of the substrate cleaning apparatus 30 shown in FIG.

[0107] In this embodiment, the temperature of the partition wall 35 of the processing chamber 31 is adjusted by an external temperature adjuster 65 consisting of a combination of a cooling unit 65a and a heating unit 65b. In the example shown in Fig. 7, the temperature of the partition wall 35 is adjusted by the external temperature adjuster 65 so that "temperature of the exhaust wall 35d<temperature of the processing bottom wall 35c<temperature of the processing side wall 35b<temperature of the processing ceiling wall 35a" is satisfied.

[0108] As a result, the atmosphere in the processing chamber 32 is cooled so as to have a temperature distribution (temperature gradient) in which the temperature gradually decreases from the vicinity of the substrate W toward the exhaust chamber 33.

[0109] Particularly in this embodiment, the processing ceiling wall portion 35a, which is disposed at a position away from the exhaust chamber 33 and close to the substrate W in the processing chamber 32, is heated by the heating portion 65b, thereby adjusting the temperature of the partition wall portion 35. Therefore, the temperature of the atmosphere in the processing chamber 32 can be adjusted so that the atmosphere in the processing chamber 32 has a strong temperature gradient. Therefore, a larger thermophoretic force can be applied to the particles floating in the processing chamber 32, and the particles can be more effectively guided from the processing chamber 32 to the exhaust chamber 33.

[0110] [Variations] The temperature adjustment unit may have any configuration capable of adjusting the temperature of the atmosphere inside the processing chamber 31 (the processing chamber 32 and / or the exhaust chamber 33). The temperature adjustment unit in each of the above-described embodiments adjusts the temperature of the atmosphere inside the processing chamber 31 by adjusting the temperature of the partition wall 35 of the processing chamber 31 under the control of the control unit 22, but the temperature of the atmosphere inside the processing chamber 31 may be adjusted by other methods.

[0111] For example, under the control of the control unit 22, the temperature adjustment unit may adjust the temperature of the atmosphere in the processing chamber 32 via the substrate W. That is, the temperature adjustment unit may heat and / or cool the substrate W on the mounting table 41, thereby heating and / or cooling the atmosphere in the processing chamber 32 by the substrate W.

[0112] The configuration of such a temperature adjustment part is not limited, and the method of adjusting the temperature of the substrate W by the temperature adjustment part is also not limited. As an example, the substrate W on the mounting table 41 can be heated and / or cooled by the temperature adjustment part 67 (see FIG. 2) provided in the holder 40, thereby heating and / or cooling the atmosphere in the processing chamber 32 by the substrate W.

[0113] The temperature of the atmosphere in the processing chamber 31 (processing chamber 32 and / or exhaust chamber 33) may be adjusted by using a combination of the temperature adjustment units of the above-mentioned embodiments and modifications. For example, the temperature of the atmosphere in the processing chamber 31 may be adjusted by both an internal temperature adjuster (see FIGS. 4A to 5) provided inside the partition wall 35 of the processing chamber 31 and an external temperature adjuster (see FIGS. 6 and 7) provided outside the partition wall 35. The temperature of the atmosphere in the processing chamber 31 may be adjusted by using a device for adjusting the temperature of the substrate W (see temperature adjustment unit 67 shown in FIG. 2) in combination with the internal temperature adjuster and / or the external temperature adjuster.

[0114] The above-described configuration of the substrate cleaning apparatus 30 is also applicable to substrate processing apparatuses that perform processes other than cleaning the substrate W.

[0115] It should be noted that the embodiments and modifications disclosed in this specification are merely illustrative in all respects and are not to be construed as limiting. The above-mentioned embodiments and modifications can be omitted, substituted, and modified in various forms without departing from the scope and spirit of the appended claims. For example, the above-mentioned embodiments and modifications may be combined in part or in whole, and an embodiment other than the above-mentioned may be combined in part or in whole with the above-mentioned embodiment or modification.

[0116] Furthermore, the technical category embodying the above-mentioned technical idea is not limited. For example, the above-mentioned device may be applied to another device. The above-mentioned technical idea may also be embodied by a computer program for causing a computer to execute one or more procedures (steps) included in the above-mentioned method. The above-mentioned technical idea may also be embodied by a computer-readable non-transitory recording medium on which such a computer program is recorded. [Explanation of symbols]

[0117] 30 Substrate cleaning equipment 31 Processing chamber 32 Processing Room 33 Exhaust chamber 36 Gas Supply Section 60 Coolant flow path 65 External temperature controller 65a Cooling section 65b Heating section W substrate

Claims

1. a processing chamber having a processing chamber and an exhaust chamber connected to the processing chamber, the processing chamber containing a substrate in the processing chamber having a reduced pressure atmosphere; a gas supply unit that blows a gas having a pressure higher than the atmosphere of the processing chamber onto the substrate in the processing chamber; a temperature adjusting unit that adjusts a temperature of at least one of the atmosphere in the processing chamber and the exhaust chamber so that the atmosphere in the processing chamber has a temperature distribution in which the temperature gradually decreases from the vicinity of the substrate toward the exhaust chamber; Equipped with the processing chamber has a partition wall portion that partitions the processing chamber and the exhaust chamber, The temperature adjustment unit adjusts the temperature of the atmosphere through the partition wall unit, The temperature adjustment unit has an internal temperature adjuster provided inside the partition wall, the internal temperature regulator has a refrigerant flow path extending inside the partition wall portion, and a refrigerant fluid flows into the refrigerant flow path at a position relatively close to the exhaust chamber and flows out of the refrigerant flow path at a position relatively far from the exhaust chamber. Substrate processing equipment.

2. A processing chamber having a processing chamber and an exhaust chamber connected to the processing chamber, the processing chamber containing a substrate in a reduced pressure atmosphere; a gas supply unit that blows a gas having a pressure higher than the atmosphere of the processing chamber onto the substrate in the processing chamber; a temperature adjusting unit that adjusts a temperature of at least one of the atmosphere in the processing chamber and the exhaust chamber so that the atmosphere in the processing chamber has a temperature distribution in which the temperature gradually decreases from the vicinity of the substrate toward the exhaust chamber; Equipped with the processing chamber has a partition wall portion that partitions the processing chamber and the exhaust chamber, The temperature adjustment unit adjusts the temperature of the atmosphere through the partition wall unit, The temperature adjustment unit has an internal temperature adjuster provided inside the partition wall, the internal temperature regulator has, inside the partition wall portion, a first refrigerant flow path provided at a position relatively close to the exhaust chamber, and a second refrigerant flow path provided independently of the first refrigerant flow path at a position relatively far from the exhaust chamber, a temperature of the refrigerant fluid flowing into the first refrigerant flow path is lower than a temperature of the refrigerant fluid flowing into the second refrigerant flow path; Substrate processing equipment.

3. A processing chamber having a processing chamber and an exhaust chamber connected to the processing chamber, the processing chamber containing a substrate in a reduced pressure atmosphere; a gas supply unit that blows a gas having a pressure higher than the atmosphere of the processing chamber onto the substrate in the processing chamber; a temperature adjusting unit that adjusts a temperature of at least one of the atmosphere in the processing chamber and the exhaust chamber so that the atmosphere in the processing chamber has a temperature distribution in which the temperature gradually decreases from the vicinity of the substrate toward the exhaust chamber; Equipped with the processing chamber has a partition wall portion that partitions the processing chamber and the exhaust chamber, The temperature adjustment unit adjusts the temperature of the atmosphere through the partition wall unit, the exhaust chamber is located below the processing chamber, the partition wall portion includes an exhaust wall portion that partitions the exhaust chamber, a processing side wall portion that partitions the processing chamber at a side of the processing chamber, and a processing ceiling wall portion that partitions the processing chamber above the processing chamber, the temperature adjustment unit makes the temperature of the exhaust wall portion lower than the temperature of the processing side wall portion, and makes the temperature of the processing side wall portion lower than the temperature of the processing ceiling wall portion; Substrate processing equipment.

4. 4. The substrate processing apparatus according to claim 1, wherein the temperature adjustment unit promotes the movement of particles in the processing chamber to the exhaust chamber by thermophoresis.

5. 5. The substrate processing apparatus according to claim 1, wherein the temperature of the atmosphere in the processing chamber is equal to or lower than the temperature of the substrate.

6. 6. The substrate processing apparatus according to claim 1, wherein the gas supply unit sprays clusters of gas onto the substrate.

7. 7. The substrate processing apparatus according to claim 1, further comprising a holder that rotatably holds the substrate in the processing chamber.

8. 8. The substrate processing apparatus according to claim 1, wherein the temperature adjustment section includes a cooling section that cools the atmosphere through the partition wall.

9. 8. The substrate processing apparatus according to claim 1, wherein the temperature adjustment section includes a heating section that heats the atmosphere through the partition wall.

10. The substrate processing apparatus according to claim 3 , wherein the temperature adjustment section includes an internal temperature adjuster provided inside the partition wall.

11. 11. The substrate processing apparatus of claim 10, wherein the internal temperature regulator has a refrigerant flow path extending inside the partition wall portion, and a refrigerant fluid flows into the refrigerant flow path at a position relatively close to the exhaust chamber and flows out of the refrigerant flow path at a position relatively far from the exhaust chamber.

12. the internal temperature regulator has, inside the partition wall portion, a first refrigerant flow path provided at a position relatively close to the exhaust chamber, and a second refrigerant flow path provided independently of the first refrigerant flow path at a position relatively far from the exhaust chamber, The substrate processing apparatus of claim 10 , wherein a temperature of the coolant fluid flowing into the first coolant passage is lower than a temperature of the coolant fluid flowing into the second coolant passage.

13. The substrate processing apparatus according to claim 3 , wherein the temperature adjustment section includes an external temperature adjustment device provided outside the partition wall.

14. 14. The substrate processing apparatus according to claim 1, wherein the temperature adjustment unit adjusts the temperature of an atmosphere in the processing chamber via the substrate.

15. adjusting the temperature of at least one of the atmospheres of the processing chamber and the exhaust chamber by a temperature adjusting unit so that the reduced pressure atmosphere of the processing chamber connected to the exhaust chamber has a temperature distribution in which the temperature gradually decreases from the vicinity of the substrate in the processing chamber toward the exhaust chamber; spraying a gas having a pressure higher than the atmosphere of the processing chamber onto the substrate in the processing chamber; the temperature adjustment unit adjusts a temperature of the atmosphere via a partition wall unit that partitions the processing chamber and the exhaust chamber; The temperature adjustment unit has an internal temperature adjuster provided inside the partition wall, the internal temperature regulator has a refrigerant flow path extending inside the partition wall portion, and a refrigerant fluid flows into the refrigerant flow path at a position relatively close to the exhaust chamber and flows out of the refrigerant flow path at a position relatively far from the exhaust chamber. A method for processing a substrate.

16. A process of adjusting the temperature of at least one of the atmospheres of the processing chamber and the exhaust chamber by a temperature control unit so that the reduced pressure atmosphere of the processing chamber connected to the exhaust chamber has a temperature distribution in which the temperature gradually decreases from the vicinity of the substrate in the processing chamber toward the exhaust chamber; spraying a gas having a pressure higher than the atmosphere of the processing chamber onto the substrate in the processing chamber; the temperature adjustment unit adjusts a temperature of the atmosphere via a partition wall unit that partitions the processing chamber and the exhaust chamber; The temperature adjustment unit has an internal temperature adjuster provided inside the partition wall, the internal temperature regulator has, inside the partition wall portion, a first refrigerant flow path provided at a position relatively close to the exhaust chamber, and a second refrigerant flow path provided independently of the first refrigerant flow path at a position relatively far from the exhaust chamber, a temperature of the refrigerant fluid flowing into the first refrigerant flow path is lower than a temperature of the refrigerant fluid flowing into the second refrigerant flow path; A method for processing a substrate.

17. A process of adjusting the temperature of at least one of the atmospheres of the processing chamber and the exhaust chamber by a temperature control unit so that the reduced pressure atmosphere of the processing chamber connected to the exhaust chamber has a temperature distribution in which the temperature gradually decreases from the vicinity of the substrate in the processing chamber toward the exhaust chamber; spraying a gas having a pressure higher than the atmosphere of the processing chamber onto the substrate in the processing chamber; the temperature adjustment unit adjusts a temperature of the atmosphere via a partition wall unit that partitions the processing chamber and the exhaust chamber; the exhaust chamber is located below the processing chamber, the partition wall portion includes an exhaust wall portion that partitions the exhaust chamber, a processing side wall portion that partitions the processing chamber at a side of the processing chamber, and a processing ceiling wall portion that partitions the processing chamber above the processing chamber, the temperature adjustment unit makes the temperature of the exhaust wall portion lower than the temperature of the processing side wall portion, and makes the temperature of the processing side wall portion lower than the temperature of the processing ceiling wall portion; A method for processing a substrate.

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