Heater Design Solutions for Chemical Delivery Systems

Abstract

The semiconductor substrate processing apparatus includes a chemical separation chamber for processing semiconductor substrates, a chemical delivery module, and a control module. The chemical delivery module is in fluid communication with the chamber and includes a canister oven, a control oven, and a heating element. The canister oven generates a process gas using a heated precursor. The control oven receives the process gas via a first gas line and supplies the process gas to the chamber via a second gas line. The first gas line extends between an inner surface of the canister oven and an inner surface of the control oven. The heating element heats a portion of the first gas line between the inner surface of the canister oven and the inner surface of the control oven. The controller module adjusts the heating temperature of the heating element based on the temperature of the portion.

Description

Technical Field

[0001] [Claims of Priority] This application claims the benefit of priority of U.S. Provisional Patent Application No. 63 / 018,288, filed Apr. 30, 2020, the entire disclosure of which is incorporated herein by reference.

[0002] The subject matter disclosed herein generally relates to systems, methods, devices, and machine-readable media related to heater design solutions for chemical delivery systems for substrate processing apparatuses.

Background Art

[0003] Semiconductor substrate processing apparatuses are used to process semiconductor substrates by techniques including etching, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PEALD), pulsed deposition layer (PDL), plasma-enhanced pulsed deposition layer (PEPDL) processing, and resist removal. One type of substrate processing apparatus includes a reaction chamber that includes an upper electrode and a bottom electrode, in which radio frequency (RF) power is applied between the electrodes to excite process gases into plasma for processing a semiconductor substrate within the reaction chamber.

[0004] Another type of substrate processing apparatus includes an ALD tool, which is a special type of CVD processing system in which an ALD reaction occurs between two or more chemical species introduced as process gases into a chemical separation chamber (e.g., an ALD processing chamber). Process gases (e.g., precursor gases) are used to form thin film deposits of materials on substrates such as silicon wafers as used in the semiconductor industry. The precursor gas is subsequently introduced from a gas source into the ALD processing chamber, whereupon the gas reacts with the surface of the substrate and a deposited layer is formed upon bonding.

[0005] To supply process gas from a gas source to a chemical separation chamber, a plurality of gas lines can be used. However, the gas lines may pass through a non-uniform environment (e.g., a heat-insulating wall) that forms cold spots in the gas lines. Such cold spots can clog the gas lines, resulting in a reduction in the flow of process gas into the chemical separation chamber.

[0006] The description of the background art provided herein presents the context of the present disclosure generally. It should be noted that the information described in this section is presented to provide some context of the following disclosed subject matter to those skilled in the art and should not be regarded as admitted prior art. More specifically, the achievements of the inventors named herein within the scope described in the "Background Art" of this specification, as well as aspects of this specification that may not be regarded as prior art at the time of filing, are not admitted as prior art to the present disclosure, either explicitly or implicitly.

Summary of the Invention

[0007] A method, system, and computer program for semiconductor substrate processing are presented, which include techniques for a heater design solution for a chemical delivery system for a chemical separation chamber used for processing a semiconductor substrate.

[0008] In an exemplary embodiment, a semiconductor substrate processing apparatus includes a chemical separation chamber for processing a semiconductor substrate. The semiconductor substrate processing apparatus further includes a chemical delivery module in fluid communication with the chemical separation chamber. The chemical delivery module includes a canister oven, a control oven, and a heating element. The canister oven is configured to heat a precursor to a predetermined temperature and use the heated precursor to generate a process gas. The control oven is configured to receive the process gas via a first gas line and supply the process gas to the chemical separation chamber via a second gas line for processing the semiconductor substrate. The first gas line extends between the inner surface of the canister oven and the inner surface of the control oven. The heating element is configured to heat a portion of the first gas line between the inner surface of the canister oven and the inner surface of the control oven. The semiconductor substrate processing apparatus further includes a controller module coupled to the chemical delivery module and the chemical separation chamber. The controller module is configured to detect a temperature of a portion of the first gas line and adjust a heating temperature of the heating element based on the detected temperature.

[0009] In another exemplary embodiment, a chemical delivery module for supplying a process gas to a chemical separation chamber of a semiconductor substrate processing apparatus includes a canister oven, a control oven, a heating element, and a controller module. The canister oven is configured to heat a precursor to a predetermined temperature and use the heated precursor to generate a process gas. The control oven is configured to receive the process gas via a first gas line and supply the process gas to the chemical separation chamber via a second gas line for processing the semiconductor substrate. The first gas line extends between the inner surface of the canister oven and the inner surface of the control oven. The heating element is configured to heat a portion of the first gas line between the inner surface of the canister oven and the inner surface of the control oven. The controller module is configured to detect a temperature of a portion of the first gas line and adjust a heating temperature of the heating element based on the detected temperature.

[0010] In yet another exemplary embodiment, a method of processing a semiconductor substrate includes heating a precursor to a predetermined temperature within a canister oven to generate a process gas. The method further includes supplying the process gas via a gas line to a chemical separation chamber in which the semiconductor substrate is processed. The gas line extends between the canister oven and the chemical separation chamber. The method further includes heating a portion of the gas line that extends between an inner surface of the canister oven and an inner surface of a control oven using a heating element. The method further includes monitoring a surface temperature of the heating element. The method further includes adjusting a heating temperature of the heating element based on the surface temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] The various drawings of the accompanying drawings merely illustrate exemplary embodiments of the present disclosure and should not be regarded as limiting its scope.

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[0019] The following description includes systems, methods, techniques, instruction sequences, and computer program products (e.g., stored on a machine-readable medium) that embody exemplary embodiments of the present disclosure. In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of exemplary embodiments directed to additive manufacturing (such as metal laser sintering) that uses acoustic excitation (e.g., ultrasonic and megasonic vibrations) to reduce thermal cracking. However, it will be apparent to those skilled in the art that the embodiments may be practiced without these specific details.

[0020] Part of the disclosure of this patent document contains material that is subject to copyright protection. The copyright owner does not object to the reproduction by anyone of the patent document or patent disclosure as it appears in the patent file or records of the Patent and Trademark Office, but reserves all copyrights otherwise. The following notice: Copyright Lam Research Corporation, 2020, All Rights Reserved applies to any and all data and drawings hereinafter described that form a part of this specification.

[0021] FIG. 1 is a functional block diagram of an example of a substrate processing system 100 in which an embodiment of the present disclosure may be used. Referring now to FIG. 1, as illustrated, an exemplary substrate processing system 100 is configured to perform deposition. Although a PECVD substrate processing system is shown as system 100, a PEALD substrate processing system or other substrate processing system may be used. Substrate processing system 100 includes a chemical isolation chamber (also referred to as a processing chamber or substrate processing chamber) 102 that surrounds other components of substrate processing system 100 and contains plasma. Substrate processing chamber 102 includes a gas distribution device 104 and a substrate support 106 such as an electrostatic chuck (ESC). During operation, substrate 108 is placed on substrate support 106.

[0022] In some embodiments, gas distribution device 104 may include a powered showerhead 109 that distributes process gas across substrate 108 and induces ion bombardment. Showerhead 109 may include a stem portion that includes one end connected to the upper surface of processing chamber 102. The base portion is generally cylindrical and extends radially outward from the end opposite the stem portion at a position spaced from the upper surface of processing chamber 102. The surface of the base portion of showerhead 109 that faces the substrate, or faceplate, includes a plurality of dispersed holes through which process gas(es) flow. Gas distribution device 104 may be made of a metallic material and may function as an upper electrode. Alternatively, gas distribution device 104 may be made of a non-metallic material and may include an embedded electrode. In other embodiments, the upper electrode may include a conductive plate and the process gas may be introduced in another form.

[0023] Substrate support 106 includes a conductive baseplate 110 that functions as a lower electrode. Baseplate 110 supports a heating plate 112 that may correspond to a ceramic multi-zone heating plate. A thermal resistance layer 114 may be disposed between heating plate 112 and baseplate 110. Baseplate 110 may include one or more coolant channels 116 for flowing coolant through baseplate 110.

[0024] The radio frequency (RF) generation system 120 generates an RF voltage and outputs it to one of an upper electrode (e.g., the gas distribution device 104) and a lower electrode (e.g., the base plate 110 of the substrate support 106). The other of the upper electrode and the lower electrode may be DC grounded, AC grounded, or floating at 143. In some embodiments, the RF generation system 120 may supply dual-frequency power including an HF generator 121 and an LF generator 122 that generate high-frequency (HF) power and low-frequency (LF) power (at respective predetermined frequencies and output levels), which is supplied to the upper electrode or the lower electrode (or the showerhead) by the matching and distribution network 124.

[0025] The chemical delivery system (also referred to as the chemical delivery module) 130 includes process gas sources such as one or more canister ovens 132-1, 132-2, …, and 132-N (collectively, the process gas source or canister oven 132), where N is an integer greater than zero. The process gas source is fluidly coupled to a control oven 133 (e.g., via a plurality of gas lines), and the control oven is configured to control the temperature of the process gas supplied by the canister oven 132 and to control the distribution of the process gas to the corresponding valves 134-1, 134-2, …, and 134-N.

[0026] The process gas supply source 132 supplies one or more process gas mixtures, dopants, carrier gases, liquid precursors, and / or purge gases. In some embodiments, the chemical delivery system 130 delivers a precursor gas, e.g., a mixture of tetraethyl orthosilicate (TEOS) gas, a gas containing oxygen species and argon (Ar) gas during deposition, and a dopant containing triethyl phosphate (TEPO) and / or triethyl borate (TEB). In some embodiments, the diffusion of the dopant occurs from the gas phase. For example, a carrier gas (e.g., nitrogen, argon, etc.) contains a desired dopant (also in the gas phase, e.g., triethyl phosphate (TEPO) and / or triethyl borate (TEB)) at a high concentration and is supplied to the silicon wafer, where the concentration can be equilibrated. In subsequent processes, the wafer may be placed in a quartz tube heated to a specific temperature.

[0027] Returning to FIG. 1, the process gas supply source 132 and the control oven 133 are connected to the mixing manifold 140 by valves 134-1, 134-2, …, and 134-N (collectively, valves 134) and mass flow controllers (MFCs) 136-1, 136-2, …, and 136-N (collectively, mass flow controllers (MFCs) 136). The process gas is supplied to the mixing manifold 140, where it is mixed. The output of the mixing manifold 140 is supplied to the substrate processing chamber 102. In some embodiments, the output of the mixing manifold 140 is supplied to the showerhead 109. A secondary purge gas 170 may be supplied to the processing chamber 102, e.g., from behind the showerhead 109, via the valve 172 and the MFC 174. Although shown separately, the mixing manifold 140 may be part of the chemical delivery system 130.

[0028] In an exemplary embodiment, the gas lines between the process gas source 132, the control oven 133, the valve 134, the MFC 136, the mixing manifold 140, and the substrate processing chamber 102 may be configured using heating elements configured to heat one or more portions of the gas lines based on a predetermined temperature, as discussed herein. Exemplary portions include the insulated wall region, or other locations, such as dead zones through which the gas line passes that may create cold spots. More specifically, the gas line may include temperature sensors that determine the surface temperature of one or more portions of the gas line. A control module (e.g., the system controller 160) detects the surface temperature measured by the temperature sensors and adjusts the heating temperature of the heating elements based on the predetermined temperature. In an exemplary embodiment, the predetermined temperature is the sublimation temperature maintained in the process gas source 132 that triggers sublimation of the solid precursor. In this context, using the techniques discussed herein related to the use of heating elements to heat the gas lines prevents clogging of the gas lines and increases the flow efficiency of the process gas. Different combinations of canisters and control ovens within the chemical delivery module are shown in connection with FIGS. 2 and 3. FIGS. 4 and 5 show different types of heating elements that can be used in connection with the disclosed techniques.

[0029] The temperature controller 142 may be connected to a plurality of thermal control elements (TCEs) 144 disposed within the heating plate 112. For example, the TCEs 144 may include, but are not limited to, respective macro TCEs corresponding to each zone within a multi-zone heating plate, and / or an array of micro TCEs disposed across a plurality of zones of the multi-zone heating plate. The temperature controller 142 may be used to control the plurality of TCEs 144 to control the temperature of the substrate support 106 and the substrate 108. The temperature controller 142 may communicate with a coolant assembly 146 to control the flow of coolant flowing through the channel 116. For example, the coolant assembly 146 may include a coolant pump and a reservoir. The temperature controller 142 may operate the coolant assembly 146 to selectively flow coolant through the channel 116 to cool the substrate support 106. The valve 150 and the pump 152 may be used to control the pressure and exhaust reactants from the processing chamber 102.

[0030] The system controller 160 may be used to control the components of the substrate processing system 100, including dynamically monitoring and adjusting the surface temperature of the heating elements of the gas lines within the chemical delivery system 130. Although the temperature controller 142 is shown as a separate controller, it may be implemented within the system controller 160.

[0031] Some embodiments of the present disclosure are directed to a chemical delivery system that includes one or more canister ovens that generate a process gas and a control oven that supplies the process gas to a chemical separation chamber (e.g., chamber 102), and the gas lines used to deliver the process gas from the canister oven to the control oven and from the control oven to the chemical separation chamber are composed of heating elements that use the techniques discussed herein.

[0032] Figure 2 shows a chemical delivery module 200 that includes a single canister oven coupled to a chemical separation chamber, according to some embodiments. Referring to Figure 2, the chemical delivery module 200 includes a canister oven 202 configured to generate a process gas (e.g., a precursor gas), and the process gas is delivered to a chemical separation chamber 204 via a gas line 236.

[0033] The canister oven 202 is an enclosure formed by a thermal insulation wall 206 and is used to hold a precursor canister 218 having a solid precursor or a liquid precursor (or another type of chemical substance). The canister oven 202 further includes a heater 216 configured to heat the precursor canister 218 to generate a process gas 220. In some aspects, the heater 216 can include a fan and is configured to generate convective heat within the canister oven 202 to trigger sublimation of the precursor within the precursor canister 218 and generate the process gas 220. For example, the heater 216 generates convective heat within the canister oven 202 at a maximum predetermined temperature (e.g., the sublimation temperature associated with the precursor within the precursor canister 218), and as a result, the process gas 220 is generated.

[0034] The gas line 236 passes through an opening 234 in one of the thermal insulation walls of the canister oven 202 and an opening 232 in the thermal insulation wall of the chemical separation chamber 204. More specifically, the gas line 236 extends between the inner surface 210 and the outer surface 208 of the canister oven 202 as it passes through the opening 234. Similarly, the gas line 236 extends between the inner surface 228 and the outer Surface 2extends between 26. When the gas line 236 passes through the openings 234 and 232 in the heat-insulating walls of the canister oven 202 and the chemical separation chamber 204, cold spots 222 and 224 may be formed in the gas line 236 at positions close to the heat-insulating walls. As used herein, the term "inner surface" of an oven or chamber refers to the interior of the oven or chamber, e.g., the inner wall. As used herein, the term "outer surface" refers to the surface of the oven or chamber, e.g., the outer wall.

[0035] In an exemplary embodiment, the chemical delivery module 200 further includes a heating element 230, which is attached to the gas line 236 and extends through the openings 232 and 234 to cover a portion of the gas line including the cold spots 222 and 224. More specifically, the heating element 230 extends between the inner surface 210 and the outer surface 208 of the canister oven 202 (to cover the cold spot 222) and between the inner surface 228 and the outer surface 226 of the chemical separation chamber 204 (to cover the cold spot 224). The heating element 230 is configured to generate heat along the surface of the gas line 236 to prevent the formation of the cold spots 222 and 224, which as a result prevents the solidification of the precursor gas and the clogging of the gas line 236.

[0036] In an exemplary embodiment, the heating element 230 can be installed and / or operated based on the dimensions of the opening 234 of the canister oven 202. For example, the opening 234 is characterized by the width (t) 212 of the heat-insulating wall 206 and the diameter (d) 214 of the opening 234. In embodiments where the opening 234 is square or rectangular, Diameter( d ) can be the shortest distance of the opening. In some embodiments, the heating element 230 can be installed and / or operated when t / d ≧ 0.05.

[0037] In an exemplary embodiment, the chemical delivery module 200 further includes one or more temperature sensors, such as temperature sensor 238, configured to measure the surface temperature of at least a portion of the gas line 236 (e.g., a portion of the gas line 236 between the inner surface 210 and the outer surface 208 of the canister oven 202). A controller module (e.g., the system controller 160 of FIG. 1) receives the measured surface temperature from the temperature sensor 238 and adjusts the heating temperature of the heating element 230 based on a predetermined temperature (e.g., the sublimation temperature of the precursor within the precursor canister 218) within the canister oven 202 and the measured surface temperature. For example, the system controller 160 receives the measured surface temperature and adjusts the heating temperature of the heating element 230 based on the difference between the predetermined temperature and the measured surface temperature.

[0038] In some aspects, such measurement of the surface temperature and adjustment of the heating temperature of the heating element 230 can be performed dynamically based on a predetermined schedule or triggered by an external command or other measurement trigger. FIG. 2 shows a single temperature sensor 238 proximate to a portion of the gas line 236 associated with the cold spot 222, but the present disclosure is not limited in this regard and multiple other sensors along the gas line 236 can be used to measure the surface temperature in different zones of the gas line and accordingly adjust the heating temperature of the heating element 230. In some aspects, the heating element 230 can include multiple heating zones, and the heating temperature of each heating zone can be independently controlled by the system controller 160 (e.g., based on the surface temperature measured for a particular heating zone). An exemplary heating element is shown in FIG. 5 in relation to FIG. 4.

[0039] Figure 3 shows a chemical delivery module 300 including a canister oven and a control oven coupled to a chemical separation chamber according to some embodiments. Referring to FIG. 3, the chemical delivery module 300 includes a canister oven 304 configured to generate a process gas (e.g., a precursor gas), and the process gas is supplied from the canister oven 304 to the control oven 302 via a gas line 318 and from the control oven 302 to the chemical separation chamber 306 via a gas line 3 18 is delivered.

[0040] The canister oven 304 is an enclosure formed by a thermal insulation wall 352 and is used to hold a precursor canister 334 having a solid precursor or a liquid precursor (or another type of chemical substance). The canister oven 304 further includes a heater 332 configured to heat the precursor canister 334 to generate a process gas 336. In some aspects, the heater 332 can include a fan and is configured to generate convective heat within the precursor canister 334 to trigger sublimation of the precursor within the canister oven 304 and generate the process gas 336. For example, the heater 332 generates convective heat within the canister oven 304 at a maximum predetermined temperature (e.g., the sublimation temperature associated with the precursor within the precursor canister 334), resulting in the generation of the process gas 336.

[0041] The gas line 318 passes through an opening 330 in one of the thermal insulation walls of the canister oven 304 and an opening 328 in one of the thermal insulation walls 354 of the control oven 302. More specifically, the gas line 318 extends between the inner surface 340 and the outer surface 310 of the canister oven 304 when passing through the opening 330. Similarly, the gas line 318 extends between the inner surface 312 and the outer Surface 3extends between 08. When the gas line 318 passes through the openings 328 and 330 in the heat insulation walls of the control oven 302 and the canister oven 304, a cold spot 358 may be formed in the gas line 318 at a position close to the heat insulation walls 354 and 352 near the openings 328 and 330.

[0042] The control oven 302 receives process gas (e.g., process gas 336 from the canister oven 304) from one or more canister ovens and has a heater 3 (which can be a convection heater including a fan for circulating hot air in the oven) 32 to heat the process gas(es). In an exemplary embodiment, the control oven 302 can be connected to a single canister oven (as shown in FIG. 3) or multiple canister ovens where each oven supplies process gas to the control oven 302. The control oven 302 can be configured to perform additional processing of the received process gas and to supply the process gas to the chemical separation chamber 306.

[0043] The gas line 356 passes through an opening 326 in one of the heat insulation walls 354 of the control oven 302 and an opening 338 in one of the heat insulation walls of the chemical separation chamber 306. More specifically, the gas line 318 extends between the inner surface 346 and the outer surface 348 of the control oven 302 when passing through the opening 326. Similarly, the gas line 356 extends between the inner surface 342 and the outer Surface 3 44 when passing through the opening 338. When the gas line 356 passes through the openings 326 and 338 in the heat insulation walls of the control oven 302 and the chemical separation chamber 306, a cold spot 322 may be formed in the gas line 356 at a position close to the heat insulation walls near the openings 326 and 338.

[0044] In an exemplary embodiment, the chemical delivery module 300 further includes a heating element 320, which is attached to the gas line 318 and extends through the openings 328 and 330 to cover a portion of the gas line including the cold spot 358. More specifically, the heating element 320 extends between the inner surface 340 and the outer surface 310 of the canister oven 304 and between the inner surface 312 and the outer surface 308 of the control oven 302 (to cover the cold spot 358). The heating element 320 is configured to generate heat along the surface of the gas line 318 to prevent the formation of the cold spot 358, which in turn prevents the solidification of the precursor gas and the clogging of the gas line 318.

[0045] In an exemplary embodiment, the chemical delivery module 300 further includes a heating element 324, which is attached to the gas line 356 and extends through the openings 326 and 338 to cover a portion of the gas line including the cold spot 322. More specifically, the heating element 324 extends between the inner surface 342 and the outer surface 344 of the chemical separation chamber 306 and between the inner surface 346 and the outer surface 348 of the control oven 302 (to cover the cold spot 322). The heating element 324 is configured to generate heat along the surface of the gas line 356 to prevent the formation of the cold spot 322, which in turn prevents the solidification of the precursor gas and the clogging of the gas line 356.

[0046] In an exemplary embodiment, the heating elements 320 and 324 can be installed and / or operated based on the dimensions of the openings 328, 330, 326, and 338. For example, the opening 328 is characterized by the width (t) 314 of the heat insulation wall 354 and the diameter (d) 316 of the opening 328. In embodiments where the opening 328 is square or rectangular, Diameter( d ) can be the shortest distance of the opening. In some embodiments, the heating element 320 can be installed and / or operated when t / d ≧ 0.05.

[0047] In an exemplary embodiment, the chemical delivery module 300 further includes one or more temperature sensors, such as temperature sensor 350, which is configured to measure the surface temperature of at least one portion of the gas line 318 (e.g., a portion of the gas line 318 between the inner surface 312 and the outer surface 308 of the control oven 302). The controller module (e.g., the system controller 160 of FIG. 1) receives the measured surface temperature from the temperature sensor 350 and adjusts the heating temperature of the heating element 320 based on a predetermined temperature (e.g., the sublimation temperature of the precursor in the precursor canister 334) within the canister oven 304 and the measured surface temperature. For example, the system controller 160 receives the measured surface temperature and adjusts the heating temperature of the heating element 320 based on the difference between the predetermined temperature and the measured surface temperature. ) In some embodiments, such measurement of the surface temperature and adjustment of the heating temperature of the heating element 320 can be performed dynamically based on a predetermined schedule or triggered by an external command or other measurement trigger. FIG. 3 shows a single temperature sensor 350 proximate to a portion of the gas line 318 associated with the cold spot 358, but the present disclosure is not limited in this regard, and multiple other sensors can be used along multiple gas lines of the chemical delivery module 300 to measure the surface temperature in different zones of the gas line and, accordingly, adjust the heating temperature of the corresponding heating element. For example, the heating element 320 can include multiple heating zones, and the heating temperature of each heating zone can be independently controlled by the system controller 160 (e.g., based on the surface temperature measured for a particular heating zone). An exemplary heating element is shown in FIG. 5 in relation to FIG. 4.

[0048]

[0049] ​Figure 4 shows a clam-shell type heating element 400 for gas line 402 used in a chemical substance delivery module according to some embodiments. Referring to FIG. 4, the heating element 400 is shown in a disassembled state, which may include clam-shells 404A and 404B that can be fixed around the gas line 402. The clam-shells 404A and 404B can include a clam-shell having one or more fire rod heaters, a clam-shell having one or more hand-wound heaters, and a clam-shell having one or more adhered heaters. Similarly, other types of heating elements may be used with the clam-shells 404A and 404B. FIGS. 2 and 3 show side views of a heating element such as a clam-shell type heating element, which surrounds the gas line when the clam-shell is attached to surround the gas line.

[0050] Figure 5 shows a hand-wound heating element 504 for gas line 502 used in a chemical substance delivery module according to some embodiments. In some aspects, the heating element 504 can include an adhered heater or another type of heating element that can be attached to the gas line 502 via an adhesive, mounting bracket, clam-shell, or other type of mounting means.

[0051] Figure 6 is a flowchart of a method 600 for processing a semiconductor substrate using a chemical substance delivery module with one or more gas line heating modules according to some exemplary embodiments. The method 600 includes operations 602, 604, 606, 608, and 610, and these operations are substrate processing SystemIt may be implemented by control logic such as the system controller 160 of FIG. 1 that manages the operation of 100 (the control logic configures other modules to perform functions, or the control logic causes other modules to perform functions). Referring to FIG. 6, in operation 602, the precursor is heated to a predetermined temperature in the canister oven to generate a process gas. For example, with respect to FIG. 2, the precursor in the precursor canister 218 and the canister oven 202 is heated by the heater 216 to generate the process gas 220. In operation 604, the process gas is supplied via a gas line to a chemical separation chamber where the semiconductor substrate is processed. For example, the process gas 220 is supplied to the chemical separation chamber 204 via the gas line 236. The gas line 236 extends between the canister oven 202 and the chemical separation chamber 204.

[0052] In operation 606, a portion of the gas line extending between the inner and outer surfaces of the canister oven is heated using a heating element. For example, a portion of the gas line 236 extending between the inner surface 210 and the outer surface 208 of the canister oven 202 is heated using the heating element 230. In operation 608, the surface temperature of the heating element is monitored. For example, the surface temperature of the heating element 230 is monitored by the system controller 160 using the temperature sensor 238. In operation 610, the heating temperature of the heating element is adjusted based on the surface temperature. For example, the heating temperature of the heating element 230 is adjusted by the system controller 160 based on the surface temperature received from the temperature sensor 238.

[0053] FIG. 7 is a block diagram illustrating one example of a machine 700 that can implement one or more exemplary method embodiments or control one or more exemplary embodiments. In alternative embodiments, the machine 700 may operate as a stand-alone device or may be connected (e.g., networked) to other machines. In a network deployment, the machine 700 may operate in the capacity of a server machine, a client machine, or both in a server-client network environment. In one example, the machine 700 may function as a peer machine in a peer-to-peer (P2P) (or other distributed) network environment. Further, although only a single machine 700 is shown, the term "machine" shall also be construed to include any collection of machines that individually or jointly execute a set (or multiple sets) of instructions to perform any one or more of the methodologies described herein via cloud computing, software as a service (SaaS), or other computer cluster configurations.

[0054] Examples described herein may include, or may operate by, logic, some components, or mechanisms. Circuitry is a set of circuits implemented in a tangible entity that includes hardware (e.g., simple circuits, gates, logic). The attribution of circuitry may be flexible over time and with respect to variations in the underlying hardware. Circuitry may include elements that perform certain operations alone or in combination during operation. In one example, the hardware of the circuitry may be fixedly designed to perform certain operations (e.g., hardwired). In one example, the hardware of the circuitry may include a physically (e.g., magnetically, electrically, by movable placement of invariant massed particles) changeable computer-readable medium that encodes instructions for certain operations, and may include variably connected physical components (e.g., execution units, transistors, simple circuits). When connecting physical components, the electrical properties underlying the hardware components are changed (e.g., from insulator to conductor, or vice versa). Instructions enable an embedded hardware (e.g., an execution unit or a loading mechanism) to build elements of the circuitry within the hardware via variable connections and cause the performance of parts of certain operations during operation. Accordingly, the computer-readable medium is communicatively coupled to other components of the circuitry when the device is operating. In some aspects, any of the physical components may be used in multiple elements of multiple circuitries. For example, during operation, an execution unit may be used in a first circuit within a first circuitry at one point in time and reused by a second circuit within the first circuitry or by a third circuit within a second circuitry at another point in time.

[0055] A machine (e.g., a computer system) 700 may include a hardware processor 702 (e.g., a central processing unit (CPU), a hardware processor core, a graphics processing unit (GPU), or any combination thereof), a main memory 704, and a static memory 706, and some or all of these may communicate with each other via an interlink (e.g., a bus) 708. The machine 700 may further include a display device 710, an alphanumeric input device 712 (e.g., a keyboard), and a user interface (UI) navigation device 714 (e.g., a mouse). In one example, the display device 710, the alphanumeric input device 712, and the UI navigation device 714 may be a touch screen display. The machine 700 may additionally include a mass storage device (e.g., a drive unit) 716, a signal generation device 718 (e.g., a speaker), a network interface device 720, and one or more sensors 721, such as a global positioning system (GPS) sensor, a compass, an accelerometer, or another sensor. The machine 700 may include an output controller 728, such as a serial (e.g., universal serial bus (USB)) connection, or other wired or wireless (e.g., infrared (IR), near field communication (NFC)) connection, to communicate with or control one or more peripheral devices (a printer, a card reader).

[0056] In an exemplary embodiment, the hardware processor 702 may perform the functions of the system controller 160 and any of the control logics described above to configure and control the functions described herein (e.g., as discussed in relation to at least FIGS. 1-6).

[0057] The mass storage device 716 may include a machine-readable medium 722 that stores one or more sets of data structures or instructions 724 (e.g., software) that embody or are utilized by any one or more of the techniques or functions described herein. The instructions 724 may also reside, completely or at least partially, within the main memory 704, within the static memory 706, or within the hardware processor 702 during execution of instructions by the machine 700. In an example, one of the hardware processor 702, the main memory 704, the static memory 706, or the mass storage device 716, or any combination thereof, may constitute a machine-readable medium.

[0058] Although the machine-readable medium 722 is shown as a single medium, the term "machine-readable medium" may include a single medium or a plurality of media (e.g., a centralized or distributed database, and / or associated caches and servers) configured to store one or more instructions 724.

[0059] The term "machine-readable medium" may include any medium that can store, encode, and hold instructions 724 for execution by machine 700, and cause machine 700 to perform any one or more of the techniques of this disclosure, or can store, encode, and hold data structures used by or associated with such instructions 724. Examples of non-limiting machine-readable media may include solid-state memory as well as optical and magnetic media. In one example, a massed machine-readable medium comprises a machine-readable medium 722 having a plurality of particles with invariant (e.g., stationary) mass. Accordingly, a massed machine-readable medium is not a transient propagated signal. Specific examples of massed machine-readable media can include non-volatile memories such as semiconductor memory devices (e.g., Electrically Programmable Read-Only Memory (EPROM), Electrically Erasable Programmable Read-Only Memory (EEPROM)), and flash memory devices, magnetic disks such as internal hard disks and removable disks, magneto-optical disks, and CD-ROM and DVD-ROM disks.

[0060] Instructions 724 may further be transmitted or received over communication network 726 using a transmission medium via network interface device 720.

[0061] The implementation of the foregoing technology may be achieved by any number of specifications, configurations, or exemplary deployments of hardware and software. It should be understood that the functional units or capabilities described herein may be referred to or labeled as components or modules in order to more specifically emphasize their independence in implementation. Such components may be embodied in any number of forms of software or hardware. For example, a component or module may be implemented as a hardware circuit comprising a custom very large scale integration (VLSI) circuit or a commercially available semiconductor such as a gate array logic chip, transistors, or other discrete components. A component or module may also be implemented in a programmable hardware device such as a field programmable gate array, programmable array logic, programmable logic device, etc. A component or module may also be implemented in software and executed by various types of processors. A particular component or module of executable code may, for example, include one or more physical or logical blocks of computer instructions, which may be configured, for example, as objects, procedures, or functions. However, the executable form of a particular component or module need not be physically located together and may include heterogeneous instructions stored at different locations, which, when physically combined, include the component or module and achieve the purpose defined for the component or module.

[0062] In fact, the components or modules of executable code may be a single instruction or multiple instructions and may be distributed across several different code portions, between different programs, and across several memory devices or an entire processing system. In particular, some aspects of the described processes (e.g., code rewriting and code analysis) may occur in a processing system different from the processing system in which the code is deployed (e.g., a computer embedded in a sensor or robot), such as a computer in a data center. Similarly, in this specification, the operation data may be identified, exemplified within a component or module, embodied in any suitable form, and configured within any suitable form of data structure. The operation data may be collected as a single data set or distributed across different locations including different storage devices and may exist at least partially simply as electronic signals on a system or network. A component or module may include agents operable to perform the desired function and may be passive or active.

[0063] Appendix and Examples

[0064] Example 1 is a semiconductor substrate processing apparatus. The apparatus includes a chemical separation chamber for processing a semiconductor substrate, and a chemical delivery module in fluid communication with the chemical separation chamber. The chemical delivery module includes a canister oven configured to heat a precursor to a predetermined temperature and generate a process gas using the heated precursor. A control oven is configured to receive the process gas via a first gas line and supply the process gas to the chemical separation chamber via a second gas line for processing the semiconductor substrate. The first gas line extends between the inner surface of the canister oven and the inner surface of the control oven. A heating element is configured to heat a portion of the first gas line between the inner surface of the canister oven and the inner surface of the control oven. A controller module is coupled to the chemical delivery module and the chemical separation chamber and is configured to detect the temperature of a portion of the first gas line and adjust the heating temperature of the heating element based on the detected temperature.

[0065] In Example 2, the subject matter of Example 1 includes the subject matter that the predetermined temperature is the sublimation temperature of the precursor, and the control module is configured to adjust the heating temperature of the heating element to the sublimation temperature.

[0066] In Example 3, the subject matter of Examples 1-2 includes the subject matter that the chemical delivery module includes a second canister oven configured to heat a second precursor to a second predetermined temperature and generate a second process gas using the heated second precursor. The control oven is configured to receive the second process gas via a third gas line and supply the second process gas to the chemical separation chamber via the second gas line for processing the semiconductor substrate. The third gas line extends between the inner surface of the second canister oven and the inner surface of the control oven.

[0067] In Example 4, the subject matter of Example 3 includes the subject matter that the chemical substance delivery module includes a second heating element configured to heat a portion of a third gas line between the inner surface of the second canister oven and the inner surface of the control oven.

[0068] In Example 5, the subject matter of Example 4 includes the subject matter that the chemical substance delivery module includes a third heating element configured to heat a portion of a second gas line between the inner surface of the control oven and the outer surface of the control oven.

[0069] In Example 6, the subject matter of Example 5 includes the subject matter that the chemical substance delivery module includes a plurality of temperature sensors configured to measure the surface temperatures of a portion of the first gas line, a portion of the second gas line, and a portion of the third gas line.

[0070] In Example 7, the subject matter of Example 6 includes the subject matter that the controller module is configured to adjust the heating temperature of the heating element, the heating temperature of the second heating element, and the heating temperature of the third heating element based on the difference between a predetermined temperature and at least one of the measured surface temperatures.

[0071] In Example 8, the subject matter of Examples 1 - 7 includes the subject matter that the heating element includes one of a clam shell having a fire rod heater, a clam shell having a hand - wound heater, a clam shell having an adhered heater, a gas - line - mounted hand - wound heater, and a gas - line - mounted adhered heater.

[0072] Example 9 is a chemical delivery module for supplying a process gas to a chemical separation chamber of a semiconductor substrate processing apparatus. The chemical delivery module includes a canister oven configured to heat a precursor to a predetermined temperature and generate a process gas using the heated precursor, and a control oven configured to receive the process gas via a first gas line and supply the process gas to the chemical separation chamber via a second gas line for processing a semiconductor substrate. The first gas line extends between the inner surface of the canister oven and the inner surface of the control oven. The chemical delivery module further includes a heating element configured to heat a portion of the first gas line between the inner surface of the canister oven and the inner surface of the control oven, and a controller module configured to detect the temperature of a portion of the first gas line and adjust the heating temperature of the heating element based on the detected temperature.

[0073] In Example 10, the subject matter of Example 9 includes the subject matter that the predetermined temperature is the sublimation temperature of the precursor.

[0074] In Example 11, the subject matter of Example 10 includes the subject matter that the control oven includes a second heating element, and the control module is configured to adjust the heating temperature of the heating element and the heating temperature of the second heating element to the sublimation temperature.

[0075] In Example 12, the subject matter of Examples 9 to 11 includes the subject matter that the second gas line extends between the inner surface and the outer surface of the control oven, and the chemical delivery module includes a second heating element configured to heat a portion of the second gas line between the inner surface and the outer surface of the control oven.

[0076] In Example 13, the subject matter of Example 12 includes the subject matter that the chemical delivery module includes a plurality of temperature sensors configured to periodically measure the surface temperatures of a portion of the first gas line and a portion of the second gas line.

[0077] In Example 14, the subject matter of Example 13 includes the subject matter that the controller module is configured to adjust based on the difference between the heating temperature of the heating element and at least one of the heating temperature of the second heating element and the measured surface temperature at a predetermined temperature.

[0078] In Example 15, the subject matter of Examples 1 to 14 includes the subject matter that the heating element comprises one of a clam shell having a fire rod heater, a clam shell having a hand-rolled heater, a clam shell having an adhered heater, a gas line-mounted hand-rolled heater, and a gas line-mounted adhered heater.

[0079] Example 16 is a method for processing a semiconductor substrate, the method comprising heating a precursor in a canister oven to a predetermined temperature to generate a process gas, supplying the process gas to a chemical separation chamber via a gas line, wherein the semiconductor substrate is processed in the chemical separation chamber and the gas line extends between the canister oven and the chemical separation chamber, heating a portion of the gas line extending between the inner and outer surfaces of the canister oven using a heating element, monitoring the surface temperature of the heating element, and adjusting the heating temperature of the heating element based on the surface temperature.

[0080] In Example 17, the subject matter of Example 16 includes determining a deviation of the surface temperature from a predetermined temperature and adjusting the heating temperature based on the deviation.

[0081] In Example 18, the subject matter of Examples 16 to 17 includes heating a second portion of the gas line extending between the inner and outer surfaces of the chemical separation chamber using a second heating element.

[0082] In Example 19, the subject matter of Example 18 includes monitoring a second surface temperature, wherein the second surface temperature is related to the second heating element, and adjusting the heating temperature of the second heating element based on the second surface temperature.

[0083] In Example 20, the subject matter of Example 19 includes the subject matter of including one of a clam shell having a heating element and a second heating element being a fire rod heater, a clam shell having a hand-rolled heater, a clam shell having an adhered heater, a hand-rolled heater of a gas line attachment type, and an adhered heater of a gas line attachment type.

[0084] In Example 21, it is at least one machine-readable medium including instructions that, when executed by a processing circuitry, cause the processing circuitry to perform operations for implementing any one of Examples 1 to 20.

[0085] Example 22 is an apparatus including means for implementing any one of Examples 1 to 20.

[0086] Example 23 is a system for implementing any one of Examples 1 to 20.

[0087] Example 24 is a method for implementing any one of Examples 1 to 20.

[0088] Throughout this specification, components, operations, or structures described as a single instance may be implemented by multiple instances. Individual operations of one or more methods are shown and described as separate operations, but one or more of the individual operations may be performed simultaneously, and they need not be performed in the order shown. Structures and functions presented as separate components in an exemplary configuration may be implemented as a combined structure or component. Similarly, structures and functions presented as a single component may be implemented as separate components. These and other variations, modifications, additions, and improvements are included within the scope of the spirit of this specification.

[0089] The embodiments shown in this specification are described in sufficient detail to enable those skilled in the art to practice the disclosed teachings. Other embodiments may be used and derived therefrom, without departing from the scope of the present disclosure, so that structural and logical substitutions and changes can be made. Accordingly, "the embodiments for carrying out the invention" should not be construed in a limiting sense, and the scope of various embodiments is defined only by the appended claims and the full scope of equivalents to which such claims are entitled.

[0090] The claims may not recite all of the feature forms disclosed herein. This is because an embodiment may feature a subset of those feature forms. Furthermore, an embodiment may include fewer features than those disclosed in a particular example. Accordingly, the following claims are incorporated into "the embodiments for carrying out the invention", and the claims stand on their own as separate embodiments.

[0091] As used herein, the term "or" may be interpreted in either an inclusive or exclusive sense. Furthermore, multiple instances may be provided for a resource, operation, or structure described herein as a single instance. In addition, the boundaries between various resources, operations, modules, engines, and data stores are somewhat arbitrary, and a particular operation is illustrated in association with a particular exemplary configuration. Other assignments of functionality are envisioned and may be included within the scope of various embodiments of the present disclosure. In general, the structure and functionality presented as separate resources in an exemplary configuration may be implemented as a combined structure or resource. Similarly, the structure and functionality presented as a single resource may be implemented as separate resources. These and other variations, modifications, additions, and improvements are included within the scope of embodiments of the present disclosure as indicated by the appended claims. Accordingly, this specification and the drawings should be considered in an exemplary rather than a limiting sense.

Claims

1. A semiconductor substrate processing apparatus, the apparatus comprising: a chemical separation chamber for processing a semiconductor substrate; a chemical delivery module in fluid communication with the chemical separation chamber, the chemical delivery module comprising: a canister oven configured to heat a precursor to a predetermined temperature and generate a process gas using the heated precursor; a control oven configured to receive the process gas via a first gas line and supply the process gas to the chemical separation chamber via a second gas line for processing the semiconductor substrate, wherein the first gas line extends between an inner surface of the canister oven and an inner surface of the control oven; a heating element configured to heat a portion of the first gas line between the inner surface of the canister oven and the inner surface of the control oven; and a chemical delivery module; a controller module coupled to the chemical delivery module and the chemical separation chamber, the controller module configured to detect a temperature of the portion of the first gas line and adjust a heating temperature of the heating element based on the detected temperature; The apparatus further comprising: The chemical delivery module comprises a second heating element configured to heat a portion of the second gas line between the inner surface of the control oven and the outer surface of the control oven.

2. The apparatus according to claim 1, wherein the predetermined temperature is a sublimation temperature of the precursor, and the controller module is configured to adjust the heating temperature of the heating element to the sublimation temperature.

3. The apparatus according to claim 1, wherein the chemical delivery module comprises: a second canister oven configured to heat a second precursor to a second predetermined temperature and generate a second process gas using the heated second precursor. The control oven is configured to receive the second process gas via a third gas line and supply the second process gas to the chemical separation chamber via the second gas line for processing the semiconductor substrate, and the third gas line extends between the inner surface of the second canister oven and the inner surface of the control oven.

4. The apparatus according to claim 3, wherein the chemical delivery module comprises a third heating element configured to heat a portion of the third gas line between the inner surface of the second canister oven and the inner surface of the control oven.

5. The apparatus according to claim 4, wherein the chemical delivery module comprises a plurality of temperature sensors configured to measure the surface temperature of the portion of the first gas line, the portion of the second gas line, and the portion of the third gas line.

6. The apparatus according to claim 5, wherein the controller module is configured to adjust the heating temperature of the heating element, the heating temperature of the second heating element, and the heating temperature of the third heating element based on a difference between the predetermined temperature and at least one of the measured surface temperatures.

7. The apparatus according to claim 1, wherein the heating element is a clam shell having a fired rod heater, is a clam shell having a hand wound heater, is a clam shell having an adhered heater, is a hand wound heater of a gas line attachment type, and is an adhered heater of a gas line attachment type, and comprises one of them.

8. A chemical delivery module for supplying a process gas to a chemical separation chamber of a semiconductor substrate processing apparatus, the chemical delivery module comprises a canister oven configured to heat a precursor to a predetermined temperature and generate the process gas using the heated precursor, and a control oven configured to receive the process gas via a first gas line and supply the process gas to the chemical separation chamber via a second gas line for processing the semiconductor substrate, wherein the first gas line extends between the inner surface of the canister oven and the inner surface of the control oven. A heating element configured to heat a portion of the first gas line between the inner surface of the canister oven and the inner surface of the control oven; A controller module configured to detect the temperature of the portion of the first gas line and adjust the heating temperature of the heating element based on the detected temperature; Comprising; The second gas line extends between the inner surface and the outer surface of the control oven, and the chemical substance delivery module includes a second heating element configured to heat a portion of the second gas line between the inner surface and the outer surface of the control oven. Chemical substance delivery module.

9. The chemical substance delivery module according to claim 8, wherein the predetermined temperature is the sublimation temperature of the precursor. Chemical substance delivery module.

10. The chemical substance delivery module according to claim 9, wherein the controller module is configured to adjust the heating temperature of the heating element and the heating temperature of the second heating element to the sublimation temperature. Chemical substance delivery module.

11. The chemical substance delivery module according to claim 8, wherein the chemical substance delivery module includes a plurality of temperature sensors configured to periodically measure the surface temperatures of the portion of the first gas line and the portion of the second gas line. Chemical substance delivery module.

12. The chemical substance delivery module according to claim 11, wherein the controller module adjusts the heating temperature of the heating element and the heating temperature of the second heating element based on the difference between the predetermined temperature and at least one of the measured surface temperatures. Chemical substance delivery module.

13. The chemical substance delivery module according to claim 8, wherein the heating element is A clam shell having a fire rod heater; A clam shell having a hand-wound heater; A clam shell having an adhered heater; A hand-wound heater of the gas line attachment type, and An adhered heater of the gas line attachment type, The chemical substance delivery module comprising one of.

14. A method for processing a semiconductor substrate, the method comprising: Heating a precursor in a canister oven to a predetermined temperature to generate a process gas; Supplying the process gas to a chemical separation chamber via a gas line, wherein the semiconductor substrate is processed within the chemical separation chamber, and the gas line extends between the canister oven and the chemical separation chamber; Heating a portion of the gas line that extends between the inner and outer surfaces of the canister oven using a heating element; Monitoring the surface temperature of the heating element; Adjusting the heating temperature of the heating element based on the surface temperature; A method comprising the above.

15. The method according to claim 14, further comprising: Determining a deviation of the surface temperature from the predetermined temperature; Adjusting the heating temperature based on the deviation. A method further comprising the above.

16. The method according to claim 14, further comprising: Heating a second portion of the gas line that extends between the inner and outer surfaces of the chemical separation chamber using a second heating element.

17. The method according to claim 16, further comprising: Monitoring a second surface temperature, wherein the second surface temperature is related to the second heating element; Adjusting the heating temperature of the second heating element based on the second surface temperature. A method further comprising the above.

18. The method according to claim 17, wherein the heating element and the second heating element comprise: A clam shell having a fired rod heater; A clam shell having a hand-wound heater; A clam shell having an adhered heater; A gas line-mounted hand-wound heater; and A gas line-mounted adhered heater. A method comprising one of the above.

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