Substrate processing system and particle removal method

Abstract

To remove a causative element of particles from a containment chamber without providing a cooling mechanism in the containment chamber from which particles are to be removed.SOLUTION: A particle removal operation includes steps of: (a) cooling at least one dummy substrate mounted on at least one substrate cooling stage to a first temperature, the first temperature being 5 to 20°C; and (b) maintaining at least one end effector in any of multiple locations within a vacuum transfer module or a substrate processing module for a first period of time, the first period of time being more than 30 seconds, in a state in which at least one cooled dummy substrate is mounted on at least one end effector.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The following disclosure relates to a substrate processing system and a particle removal method.

Background Art

[0002] Patent Document 1 discloses a technique of arranging a protection member incorporating a cooling and adsorption part such as a Peltier element so as to cover the upper surface of a stage in a chamber, performing evacuation while cooling the protection member by the cooling and adsorption part, and collecting particles.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique for removing a particle-causing element from an accommodation chamber without providing a cooling mechanism in the accommodation chamber to be a particle removal target.

Means for Solving the Problems

[0005] A substrate processing system according to one aspect of the present disclosure includes a vacuum transfer module, a substrate processing module, a load lock module, a substrate cooling stage, a substrate transfer robot, and a control unit. The substrate processing module is connected to the vacuum transfer module and is configured to process a substrate in a reduced pressure environment. The load lock module is connected to the vacuum transfer module. At least one substrate cooling stage is disposed within the load lock module. At least one substrate transfer robot is disposed within the vacuum transfer module and includes at least one end effector. The control unit is configured to control a particle removal operation. The particle removal operation includes: (a) a step of cooling at least one dummy substrate placed on at least one substrate cooling stage to a first temperature, the first temperature being 5 to 20°C; and (b) a step of maintaining at least one end effector at any one of a plurality of positions within the vacuum transfer module or the substrate processing module for a first period while at least one cooled dummy substrate is placed on the at least one end effector, the first period being 30 seconds or more.

Advantages of the Invention

[0006] According to the present disclosure, there is an effect that the causative element of particles can be removed from the accommodation chamber without providing a cooling mechanism in the accommodation chamber to be the target of particle removal.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6A

Figure 6B

Figure 6C

Figure 6D

Figure 7A

Figure 7B

Figure 8A

Figure 8B

Figure 9

Figure 10

[0008] Hereinafter, embodiments of the substrate processing system and the particle removal method disclosed in the present application will be described in detail with reference to the drawings. Note that the substrate processing system and the particle removal method disclosed are not limited by the following embodiments.

[0009] Incidentally, a substrate processing system has an accommodation chamber whose interior is set to a predetermined reduced pressure state during substrate processing, such as a process module that performs substrate processing and a vacuum transfer chamber for transferring a substrate to the process module. When the accommodation chambers of the process module, the vacuum transfer chamber, etc. are opened to the atmosphere for maintenance or the like, moisture in the atmosphere adheres to the inner wall of the accommodation chamber, and even if the accommodation chamber is evacuated, moisture remains in the accommodation chamber, and particles may be generated on the substrate. Therefore, it is conceivable to dispose a protective member incorporating a cooling adsorption section on the stage in the process module as in Patent Document 1, or to incorporate a cooling adsorption section in the stage to cool the stage and collect the causative elements of particles such as moisture to remove the particles. However, it is necessary to provide a cooling mechanism in the accommodation chamber to be the removal target of the particles, and the configuration becomes complicated.

[0010] Therefore, a technique for removing the causative elements of particles from the accommodation chamber without providing a cooling mechanism in the accommodation chamber to be the removal target of the particles is expected.

[0011] (Embodiment) (Substrate processing system 1) Next, the embodiment will be described. FIG. 1 is a diagram showing a schematic configuration of a substrate processing system 1 according to the embodiment. The substrate processing system 1 includes a plurality of vacuum processing chambers (hereinafter also referred to as process modules) PM1 to PM8, a vacuum transfer chamber 10, and an atmospheric pressure transfer chamber 20. Further, the substrate processing system 1 further includes a plurality of load lock modules LLM1 to LLM2, a plurality of load ports LP1 to LP5, and a control device 30.

[0012] In the example of FIG. 1, eight process modules PM1 to PM8, two load lock modules LLM1 to LLM2, and five load ports LP1 to LP5 are shown. However, the numbers of the process modules PM, load lock modules LLM, and load ports LP included in the substrate processing system 1 are not limited to those shown. Hereinafter, when there is no particular need to distinguish, the eight process modules PM1 to PM8 are collectively referred to as the process module PM. Similarly, the two load lock modules LLM1 to LLM2 are collectively referred to as the load lock module LLM. Also similarly, the five load ports LP1 to LP5 are collectively referred to as the load port LP. Note that the substrate processing system 1 according to the present embodiment includes at least two load lock modules LLM.

[0013] The process module PM is configured to be airtight and can be depressurized inside by evacuating the inside by an exhaust mechanism. The process module PM performs substrate processing such as etching and film formation on the substrate W in a depressurized atmosphere in which the inside is set to a predetermined depressurized state suitable for substrate processing. The substrate W is, for example, a semiconductor wafer. Each of the process modules PM includes a stage 51 inside for supporting the substrate W. The inside of the process module PM is maintained in a depressurized atmosphere during substrate processing. Each of the process modules PM is connected to the vacuum transfer chamber 10 via an openable and closable gate valve GV.

[0014] The vacuum transfer chamber 10 is configured to be airtight and can be evacuated inside by an evacuation mechanism to make the inside in a reduced pressure state. The vacuum transfer chamber 10 transports the substrate W in a reduced pressure atmosphere set to a predetermined reduced pressure state. For example, a first transfer mechanism 15 for transporting the substrate W is disposed inside the vacuum transfer chamber 10. The first transfer mechanism 15 has a robot arm that can be expanded and contracted. At least one first transfer mechanism 15 is disposed in the vacuum transfer chamber 10 and includes at least one end effector. The first transfer mechanism 15 according to the present embodiment has a first arm 15a and a second arm 15b that can operate individually. The first arm 15a and the second arm 15b each have a substantially U-shaped pick at the tip and can each hold the substrate W. In the present embodiment, the first transfer mechanism 15 corresponds to the substrate transfer robot of the present disclosure. Also, the picks of the first arm 15a and the second arm 15b correspond to the end effector, the first end effector, and the second end effector of the present disclosure. The first transfer mechanism 15 expands and contracts the robot arm to transfer the substrate W between the process modules PM1 to PM8 and the load lock modules LLM1 and LLM2. The substrate W is transferred to each process module PM through the vacuum transfer chamber 10. The substrate W processed in the process module PM can be transferred to the next process module PM where processing is to be performed through the vacuum transfer chamber 10. The substrate W for which all processing has been completed is transferred to the load lock module LLM through the vacuum transfer chamber 10.

[0015] The load lock module LLM is configured to be airtight and can switch the inside between an atmospheric atmosphere and a reduced pressure atmosphere by an evacuation mechanism. The load lock modules LLM are arranged side by side along one side of the vacuum transfer chamber 10 where the process module PM is not arranged. The load lock module LLM and the vacuum transfer chamber 10 are configured such that their interiors can communicate with each other via a gate valve GV. The load lock module LLM is connected to the normal pressure transfer chamber 20 on the side opposite to the side connected to the vacuum transfer chamber 10. The interiors of the load lock module LLM and the normal pressure transfer chamber 20 can communicate with each other via a gate valve GV.

[0016] FIG. 2 is a diagram showing a schematic configuration of a load lock module LLM according to an embodiment. The load lock module LLM is provided with a stage 61 on which a substrate W is placed inside. The stage 61 is provided with a support pin 62 and a cooling unit 63. The support pin 62 is capable of moving up and down, and moves the substrate W up and down with respect to the stage 61. The cooling unit 63 is a flow path 63a formed inside the stage 61. The cooling unit 63 cools the stage 61 by circulating a refrigerant such as a chiller cooled from an external chiller unit through the flow path 63a. The load lock module LLM can cool the substrate W by placing the substrate W on the stage 61 while cooling the stage 61 by the cooling unit 63. Note that the cooling unit 63 may have any configuration as long as it can cool the substrate W. For example, the cooling unit 63 may be a Peltier element or the like.

[0017] Returning to FIG. 1. The atmospheric pressure transfer chamber 20 has its interior maintained at an atmospheric pressure atmosphere. A plurality of load lock modules LLM are arranged in parallel on one side of the atmospheric pressure transfer chamber 20. Also, a plurality of load ports LP are arranged in parallel on the other side of the atmospheric pressure transfer chamber 20. The atmospheric pressure transfer chamber 20 has a second transfer mechanism 25 for transferring a transfer object between the load lock module LLM and the load port LP disposed inside. The second transfer mechanism 25 has an arm 25a. The arm 25a is rotatably fixed on a base 25d. The base 25d is fixed in the vicinity of the load port LP3. The tip of the arm 25a is rotatably connected to a first pick 27a and a second pick 27b having a substantially U-shaped configuration.

[0018] The load port LP is formed to be attachable to a storage container (hereinafter also referred to as a Front Opening Unified Pod (FOUP)) that houses the substrate W. The FOUP is a storage container capable of housing the substrate W. The FOUP has an openable lid (not shown). When the FOUP is installed in the load port LP, the lid of the FOUP engages with the door of the load port LP. In that state, by opening the door of the load port LP, the lid of the FOUP moves together with the door and the FOUP opens, and the inside of the FOUP and the atmospheric pressure transfer chamber 20 communicate with each other through the load port LP.

[0019] The process module PM, the vacuum transfer chamber 10, the first transfer mechanism 15, the load lock module LLM, the atmospheric pressure transfer chamber 20, the second transfer mechanism 25, and the load port LP configured as described above are each connected to the control device 30 and controlled by the control device 30.

[0020] The control device 30 is an information processing device such as a computer. The control device 30 controls each part of the substrate processing system 1. The specific configuration and functions of the control device 30 are not particularly limited. The control device 30 includes, for example, a storage unit 31, a processing unit 32, an input / output interface (IO I / F) 33, and a display unit 34. The storage unit 31 is an arbitrary storage device such as a hard disk, an optical disk, or a semiconductor memory element. The processing unit 32 is a processor such as a CPU (Central Processing Unit) or an MPU (Micro Processing Unit). The display unit 34 is a functional unit that displays information, such as a liquid crystal screen or a touch panel. The processing unit 32 reads and executes programs and recipes stored in the storage unit 31, and controls each part of the substrate processing system 1 via the input / output interface 33.

[0021] Incidentally, when the substrate processing system 1 opens the accommodation chambers such as the process module PM and the vacuum transfer chamber 10 to the atmosphere for maintenance or the like, particles may be generated on the substrate W. Such particles include, for example, particles such as minute pieces that have entered the accommodation chamber due to the opening to the atmosphere. In addition, among the particles, moisture in the atmosphere adheres to the inner wall of the accommodation chamber, and even when evacuation is performed, moisture remains in the accommodation chamber, and particles are generated due to the aggregation of moisture on particles or substrate defects. Hereinafter, the particles generated due to the aggregation of moisture are also referred to as condensates.

[0022] Therefore, in the present embodiment, the causative factors of particles are removed from the accommodation chamber by the procedure described below. Hereinafter, the case where the accommodation chamber to be the target of particle removal is the vacuum transfer chamber 10 and particles generated by the opening of the vacuum transfer chamber 10 to the atmosphere will be described as an example.

[0023] (Particle removal method) FIG. 3 is a flowchart showing the flow of the particle removal method according to the embodiment. The process of the particle removal method according to the embodiment is implemented, for example, when a predetermined operation for instructing the removal of particles is performed in the control device 30. FIG. 4 is a diagram for explaining the flow of particle removal according to the embodiment. FIGS. 4(A) to 4(D) schematically show the changes in the internal state of the vacuum transfer chamber 10 by the particle removal method according to the embodiment.

[0024] As shown in FIG. 4, the vacuum transfer chamber 10 is formed in a box shape, and a removable top plate 10a is provided at the upper part. The vacuum transfer chamber 10 removes the top plate 10a and performs maintenance inside. The vacuum transfer chamber 10 is opened to the atmosphere by removing the top plate 10a, and moisture in the atmosphere adheres to the inner wall. When the maintenance is completed, the top plate 10a is attached. The vacuum transfer chamber 10 is provided with a sealing member 10b such as a seal at the contact portion of the top plate 10a, and the inside is hermetically sealed by attaching the top plate 10a.

[0025] First, heat the vacuum transfer chamber 10 for a predetermined first hour (step S10). For example, a heater is arranged around the vacuum transfer chamber 10, or the control device 30 controls the process module PM to increase the temperature of the process module PM around the vacuum transfer chamber 10, thereby heating the vacuum transfer chamber 10. For example, heat the vacuum transfer chamber 10 to 50°C to 70°C. The first hour is, for example, a time of 3 hours or more. Thereby, the condensation core that generates condensation on the substrate W such as moisture and particles is activated. For example, the moisture adhering to the inner wall is released into the vacuum transfer chamber 10 by heat (FIG. 4(A)).

[0026] Next, evacuate the inside of the vacuum transfer chamber 10 for a predetermined second hour (step S11). For example, the control device 30 controls the vacuum transfer chamber 10 to evacuate the inside of the vacuum transfer chamber 10 for the second hour. The second hour is, for example, a time of 6 hours or more. Thereby, the released moisture and the like are discharged (FIG. 4(B)).

[0027] Next, repeat the supply of a predetermined gas and the exhaust of the gas by the exhaust mechanism to the inside of the vacuum transfer chamber 10 a plurality of times (step S12). For example, the control device 30 controls the vacuum transfer chamber 10 to repeat the supply and exhaust of the gas 10 times. Examples of the type of gas to be supplied include N2 gas. The inner wall of the vacuum transfer chamber 10 is coated with a spraying material such as alumina, and minute holes are formed in the inner wall, and particles such as moisture and minute pieces have entered the inner wall. The moisture and particles that have entered the wall surface are discharged by being released by the impact of the gas supply and exhaust (FIG. 4(C)).

[0028] Next, perform a cooling transfer process of cooling the substrate W and transferring the cooled substrate W into the vacuum transfer chamber 10 (step S13). Thereby, moisture condenses on the cooled substrate W, and the causative elements of particles such as moisture are removed from the inside of the vacuum transfer chamber 10 (FIG. 4(D)).

[0029] Next, the cooling transfer process shown in step S13 of FIG. 3 will be described. FIG. 5 is a flowchart showing the flow of the cooling transfer process according to the embodiment. FIGS. 6A to 6D are diagrams for explaining the flow of the transfer of the substrate W in the cooling transfer process according to the embodiment.

[0030] The substrate W is transferred to the load lock module LLM and the substrate W is cooled by the cooling unit 63 (step S20). For example, the control device 30 controls the normal pressure transfer chamber 20 and the load lock module LLM, and the second transfer mechanism 25 transfers the substrate W from the load port LP to the stage 61 of the load lock module LLM. In the load lock module LLM, the refrigerant cooled by an external chiller unit circulates through the cooling unit 63 and the stage 61 is cooled. The substrate W is placed on the stage 61 and comes into contact with the stage 61, thereby being cooled. The substrate W is cooled to a temperature difference of 20° C. or more, more preferably 25° C. or more from the vacuum transfer chamber 10. For example, the control device 30 sets the temperature of the refrigerant to be 20° C. or more, more preferably 25° C. or more lower than the temperature of the vacuum transfer chamber 10 with respect to the chiller unit, and cools the substrate W to a temperature difference of 20° C. or more, more preferably 25° C. or more from the vacuum transfer chamber 10. For example, when transporting the cooled dummy wafer DW to remove particles, the temperature of the wall constituting the vacuum transfer chamber 10 is about 25 to 40° C. The control device 30 circulates the refrigerant cooled by the chiller unit through the cooling unit 63 and cools the substrate W to 5 to 20° C., more preferably 10 to 15° C.

[0031] The substrate W used for removing the causative elements of particles may be a semiconductor wafer, a dummy wafer having the same characteristics as the semiconductor wafer, or a dedicated substrate for particle removal. For example, in FIG. 6A, a FOUP in which a dummy wafer DW is set as the substrate W is set in the load port LP. The second transfer mechanism 25 takes out two dummy wafers DW from the FOUP and transfers them to the stage 61 of the load lock module LLM, respectively. The load lock module LLM raises the support pin 62 to receive the dummy wafer DW from the second transfer mechanism 25, lowers the support pin 62 to bring the dummy wafer DW into contact with the stage 61, and cools the dummy wafer DW. The load lock module LLM preferably cools the dummy wafer DW in a normal pressure state (atmospheric atmosphere) without depressurizing the inside. Thereby, the dummy wafer DW can be efficiently cooled.

[0032] The cooled substrate W is transferred to the vacuum transfer chamber 10 (step S21). For example, the control device 30 controls the load lock module LLM to depressurize the inside of the load lock module LLM and switch to a depressurized atmosphere. Then, the control device 30 opens the gate valve GV, controls the vacuum transfer chamber 10, and transfers the substrate W to the vacuum transfer chamber 10 by the first transfer mechanism 15. For example, in FIG. 6B, two cooled dummy wafers DW are transferred from the load lock module LLM to the vacuum transfer chamber 10.

[0033] Maintain the state where the cooled substrate W is placed in the vacuum transfer chamber 10 for a predetermined time or longer (step S22). For example, the control device 30 controls the vacuum transfer chamber 10 to transfer the substrate W to the vicinity of the side wall of the vacuum transfer chamber 10 by the first transfer mechanism 15 and stop, and hold the substrate W in the stopped state for a predetermined time or longer. The predetermined time for holding the substrate W in the stopped state is preferably 30 seconds or longer, and more preferably 60 seconds or longer. When there are a plurality of cooled substrates W, each substrate W may be transferred to a different position. For example, in FIG. 6C, of the two cooled dummy wafers DW, one is transferred to the vicinity of the loading / unloading port with the process module PM in the vacuum transfer chamber 10, and the other is transferred to the vicinity of the center in the vacuum transfer chamber 10 and maintained for a predetermined time or longer. Thereby, moisture aggregates and adheres to each dummy wafer DW.

[0034] Take out the substrate W from the vacuum transfer chamber 10 (step S23). For example, the control device 30 controls the vacuum transfer chamber 10 to transfer the substrate W to the load lock module LLM by the first transfer mechanism 15.

[0035] Determine whether or not a predetermined number of coolings of the substrate W have been performed (step S24). For example, the control device 30 determines whether or not the above-described steps S20 to 23 have been performed a predetermined number of times. When the predetermined number of times has been performed (step S24: Yes), store the substrate W (step S25). For example, the control device 30 controls the atmospheric pressure transfer chamber 20 and the load lock module LLM, and transfers the substrate W from the load lock module LLM to the load port LP by the second transfer mechanism 25. For example, in FIG. 6D, two dummy wafers DW with moisture adhering thereto are transferred from the load lock module LLM to the load port LP and stored in the FOUP. The predetermined number of times varies depending on the size of the interior of the storage chamber for which particles are to be removed, and is set as the number of times that can sufficiently remove the causative elements of particles such as moisture from the interior of the storage chamber. The predetermined number of times is preferably, for example, 5 times or more, and more preferably 10 times or more. For example, when sufficiently removing the causative elements of particles from the vacuum transfer chamber 10 according to the embodiment, the predetermined number of times is set to 10 times.

[0036] On the other hand, when the predetermined number of times is not executed (step S24: No), the process proceeds to step S20, and the substrate W taken out from the vacuum transfer chamber 10 is cooled by the cooling unit 63 and then repeatedly transferred to the vacuum transfer chamber 10. As a result, the same substrate W reciprocates between the load lock module LLM and the vacuum transfer chamber 10, and moisture removal is repeatedly performed a plurality of times continuously on the same substrate W. Note that it is preferable to vary the position for transferring the cooled substrate W each time within the vacuum transfer chamber 10. For example, each time it is repeated, the substrate is sequentially transferred to the vicinity of the loading / unloading port of each process module PM in the vacuum transfer chamber 10 and maintained for a predetermined time or more. Thereby, moisture can be removed at various positions within the vacuum transfer chamber 10.

[0037] By performing the cooling and transfer process shown in FIG. 5, it is possible to remove the causative elements of particles such as moisture from the inside of the vacuum transfer chamber 10.

[0038] The particle removal method according to the embodiment is carried out at a timing when particle removal is necessary. For example, the particle removal method according to the embodiment is carried out when there are many particles in the particle inspection using a product wafer or a dummy wafer after evacuation after the vacuum transfer chamber 10 is opened to the atmosphere.

[0039] The dummy wafer DW used for particle removal may remove moisture and particles by heating or generating high-frequency plasma. For example, the substrate processing system 1 is provided with a cleaning chamber connected to the vacuum transfer chamber 10. The dummy wafer DW used for particle removal may remove moisture and particles by heating to 50°C or higher or generating high-frequency plasma in the cleaning chamber connected to the vacuum transfer chamber 10. Further, instead of the cleaning chamber, the substrate processing system 1 may transfer the dummy wafer DW used for particle removal to the process module PM, and heat or generate high-frequency plasma in the process module PM to remove moisture and particles. Further, the substrate processing system 1 may be provided with a heating mechanism in the load lock module LLM, and heat the dummy wafer DW used for particle removal in the load lock module LLM to remove moisture and particles.

[0040] In addition, in the substrate processing system 1 according to the embodiment, the case where the cooling unit 63 is provided in the load lock module LLM and the substrate W is cooled in the load lock module LLM has been described as an example. However, it is not limited thereto. The substrate processing system 1 may be provided with a cooling unit for cooling the substrate W at other locations such as the vacuum transfer chamber 10 or the atmospheric pressure transfer chamber 20 to cool the substrate W.

[0041] (An example of particle removal result) Next, an example of the result of removing the cause factors of particles will be described. When moisture remains after evacuation in the vacuum transfer chamber 10 after atmospheric opening, condensation occurs due to the aggregation of moisture on the substrate W. In particular, a large amount of condensation occurs on the cooled substrate W. Therefore, the effect of removing the cause factors of particles is described by the number of condensations occurring on the cooled substrate W.

[0042] The effect of removing the causative factors of particles such as moisture by only the cooling and transfer process (step S13 in FIG. 3, FIG. 5) according to the embodiment will be described. FIG. 7A is a diagram showing an example of the result of removing the causative factors of particles. FIG. 7A shows the result of counting the number of condensates adhering to the cooled substrate W. FIG. 7A shows the change in the number of condensates when only the cooling and transfer process is performed. The left graph in FIG. 7A shows the number of condensates generated on the substrate W cooled before the cooling and transfer process is performed. The right graph in FIG. 7A shows the number of condensates generated on the substrate W cooled after the cooling and transfer process is performed. The substrate W is transported to the load lock module LLM, cooled by the cooling unit 63, then transported to the vacuum transfer chamber 10, maintained in the state of being placed in the vacuum transfer chamber 10 for 1 minute, and then taken out. Before the cooling and transfer process is performed, more than 7000 condensates are generated, but after the cooling and transfer process is performed, the number is reduced by 98% to 114. By performing the cooling and transfer process in this way, the number of condensates generated on the substrate W can be greatly reduced.

[0043] The effect of removing the causative factors of particles such as moisture by the particle removal method (FIG. 3) according to the embodiment will be described. FIG. 7B is a diagram for explaining an example of the result of removing the causative factors of particles. FIG. 7B shows the result of counting the number of condensates adhering to the cooled substrate W. FIG. 7B shows the change in the number of condensates when all the particle removal methods according to the embodiment are further performed on the vacuum transfer chamber 10 where only the cooling and transfer process is performed to obtain FIG. 7A. The left graph in FIG. 7B is the number of condensates when only the cooling and transfer process is performed, which is the same 114 as the right graph in FIG. 7A. The right graph in FIG. 7A is the number of condensates generated on the substrate W after only the cooling and transfer process is performed and all the particle removal methods according to the embodiment are further performed. The number of condensates is reduced by 40% by performing the particle removal method according to the embodiment. By performing the particle removal method according to the embodiment in this way, the number of condensates generated on the substrate W can be further reduced compared to the case where only the cooling and transfer process is performed.

[0044] Next, the effect of removing the cause factors of particles will be described based on the number of condensates generated on the substrate W at room temperature.

[0045] The effect of removing the cause factors of particles such as moisture only by the cooling conveyance process (step S13 in FIG. 3, FIG. 5) according to the embodiment will be described. FIG. 8A is a diagram showing an example of the result of removing the cause factors of particles. FIG. 8A shows the result of counting the number of condensates adhering to the substrate W at room temperature. FIG. 8A shows the change in the number of condensates when only the cooling conveyance process is carried out. The left graph in FIG. 8A is the number of condensates generated on the substrate W at room temperature before the cooling conveyance process is carried out. The right graph in FIG. 8A is the number of condensates generated on the substrate W at room temperature after the cooling conveyance process is carried out. The substrate W is conveyed into the vacuum conveyance chamber 10 at room temperature and maintained in the vacuum conveyance chamber 10 for 1 minute, and then taken out. About 240 condensates are generated before the cooling conveyance process is carried out, but after the cooling conveyance process is carried out, the number is reduced by 99% to 1. By carrying out the cooling conveyance process in this way, the number of condensates generated on the substrate W can be greatly reduced.

[0046] The effect of removing the causative factors of particles such as moisture by the particle removal method (Fig. 3) according to the embodiment will be described. Fig. 8B is a diagram for explaining an example of the result of removing the causative factors of particles. Fig. 8B shows the result of counting the number of condensates adhering to the substrate W at room temperature. Fig. 8B shows the change in the number of condensates when the particle removal method according to the embodiment is further implemented for the vacuum transfer chamber 10 in which only the cooling transfer process is implemented to obtain Fig. 8A. The left graph in Fig. 8B is the number of condensates with only the cooling transfer process implemented, which is the same as 1 in the right graph of Fig. 8A. The right graph in Fig. 8B is the number of condensates generated on the substrate W after implementing only the cooling transfer process and then implementing all the particle removal methods according to the embodiment. The condensates have decreased to 0 by implementing the particle removal method according to the embodiment. By implementing the particle removal method according to the embodiment in this way, the number of condensates generated on the substrate W can be further reduced compared to the case where only the cooling transfer process is implemented.

[0047] Next, the effect of removing the causative factors of particles will be described based on the number of particles such as minute pieces other than the condensates generated on the substrate W. Fig. 9 is a diagram showing an example of the result of removing the causative factors of particles. Fig. 9 shows the result of counting the number of particles such as minute pieces adhering to the cooled substrate W. Fig. 9 shows the change in the average number of particles counted at four locations on the substrate W and the maximum value of the number of particles counted at each of the four locations. The left graph in Fig. 9 is the value on the substrate W in the state obtained from the left graph of Fig. 7A, which is the number of particles generated on the substrate W before implementing the cooling transfer process. The right graph in Fig. 9 is the value on the substrate W in the state obtained from the right graph of Fig. 7B, which is the number of particles generated on the substrate W after implementing only the cooling transfer process and then implementing all the particle removal methods according to the embodiment. Particles such as minute pieces have also decreased by implementing the cooling transfer process and the particle removal method according to the embodiment.

[0048] By implementing the cooling conveyance process and the particle removal method according to the embodiment in this way, the number of particles such as condensates and minute pieces generated on the substrate W can be reduced.

[0049] In addition, in the above embodiment, the case of removing particles in the vacuum conveyance chamber 10 has been described as an example. However, it is not limited to the removal of particles in the vacuum conveyance chamber 10. The particle removal method according to the embodiment can be applied to the removal of particles in an accommodation chamber whose interior is in a predetermined reduced pressure state. For example, when the process module PM is also opened to the atmosphere, particles may be generated on the substrate W. Therefore, according to the particle removal method according to the embodiment, the cooled substrate W may be conveyed to the process module PM to remove the particles in the process module PM. For example, the control device 30 may control the first conveyance mechanism 15 so that the cooled substrate W is maintained in the process module PM for a predetermined time or more in a state where the substrate W is placed in the process module PM without performing substrate processing, and then the substrate W is taken out from the process module PM. In order to suppress the rise in temperature, the cooled substrate W is preferably maintained in a state separated from the stage 51 in the process module PM.

[0050] FIG. 10 is a diagram showing a schematic configuration of a process module PM according to an embodiment. The process module PM is provided therein with a stage 51 on which a substrate W is placed. The stage 51 is provided with support pins 52. The support pins 52 are configured to be movable up and down, and raise and lower the substrate W with respect to the stage 51. The process module PM has a loading / unloading port 53 formed in a side wall for loading and unloading the substrate W. For example, the control device 30 conveys the cooled substrate W into the process module PM through the loading / unloading port 53 by the first transfer mechanism 15, raises the support pins 52, maintains the state in which the substrate W is separated from the stage 51 for a predetermined time or more, and then controls the first transfer mechanism 15 and the support pins 52 to take out the substrate W from the process module PM. Note that the control device 30 may control to convey the cooled substrate W into the process module PM by the first transfer mechanism 15, maintain the substrate W on the first transfer mechanism 15 for a predetermined time or more, and then take out the substrate W from the process module PM. Further, when a heater is built in the stage 51, the stage 51 may be heated by the heater. Particles adhering to the upper surface of the stage 51 are released by heating. The released particles adhere to the cooled substrate W disposed above. Thereby, the particles adhering to the upper surface of the stage 51 can be collected.

[0051] (Effect of Embodiment) As described above, the substrate processing system 1 according to the embodiment includes a vacuum transfer module (vacuum transfer chamber 10), a substrate processing module (process module PM), a load lock module LLM, a substrate cooling stage (cooling unit 63), a substrate transfer robot (first transfer mechanism 15), and a control unit (control device 30). The substrate processing module is connected to the vacuum transfer module and is configured to process the substrate W in a reduced-pressure environment. The load lock module LLM is connected to the vacuum transfer module. At least one substrate cooling stage is disposed in the load lock module. At least one substrate transfer robot is disposed in the vacuum transfer module and includes at least one end effector. The control unit is configured to control a particle removal operation. The particle removal operation includes: (a) a step of cooling at least one dummy substrate (dummy wafer DW) placed on at least one substrate cooling stage to a first temperature, where the first temperature is 5 to 20°C; and (b) a step of maintaining at least one end effector at any one of a plurality of positions in the vacuum transfer module or the substrate processing module for a first period while at least one cooled dummy substrate is placed on the at least one end effector, where the first period is 30 seconds or longer. Thereby, the substrate processing system 1 can remove the causative elements of particles from the accommodation chamber (vacuum transfer module or substrate processing module) without providing a cooling mechanism in the accommodation chamber (vacuum transfer module or substrate processing module) to be targeted for particle removal.

[0052] Further, the first temperature is 10 to 15°C. Thereby, the substrate processing system 1 can attach the causative elements of particles to the substrate W.

[0053] Further, the first period is 60 seconds or longer. Thereby, the substrate processing system 1 can attach the causative elements of particles to the substrate W.

[0054] Also, steps (a) and (b) are repeatedly performed alternately a plurality of times. Further, steps (a) and (b) are repeatedly performed alternately 5 times or more. Thereby, the substrate processing system 1 can reduce the number of substrates W contaminated by the causative factor by removing the causative factor of particles using the same substrate W.

[0055] Also, the particle removal operation includes a step of heating the substrate processing module or the vacuum transfer module for 3 hours or more before step (a). Thereby, the substrate processing system 1 can release the condensation on the substrate W such as moisture and particles adhering to the inner wall of the substrate processing module or the vacuum transfer module.

[0056] Also, at least one substrate cooling stage includes a first substrate cooling stage and a second substrate cooling stage. At least one end effector includes a first end effector and a second end effector. The particle removal operation includes (a) a step of cooling a first dummy substrate and a second dummy substrate respectively placed on the first substrate cooling stage and the second substrate cooling stage to a first temperature; and (b) a step of maintaining the first end effector at a first position among a plurality of positions for a first period and the second end effector at a second position among the plurality of positions for the first period while the cooled first dummy substrate and second dummy substrate are respectively placed on the first end effector and the second end effector. Thereby, the substrate processing system 1 can quickly remove the causative factor of particles because the area of the portion where the causative factor can adhere increases.

[0057] Further, the substrate processing system 1 according to the embodiment includes a vacuum transfer module (vacuum transfer chamber 10), a substrate processing module (process module PM), a substrate stage (stage 51), a load lock module LLM, a substrate cooling stage (cooling unit 63), a substrate transfer robot (first transfer mechanism 15), and a control unit (control device 30). The substrate processing module is connected to the vacuum transfer module and is configured to process the substrate W in a reduced-pressure environment. The substrate stage is disposed in the substrate processing module and includes a plurality of lifter pins (support pins 52). The plurality of lifter pins are configured to move vertically between an upper position and a lower position. The load lock module LLM is connected to the vacuum transfer module. At least one substrate cooling stage is disposed in the load lock module. At least one substrate transfer robot is disposed in the vacuum transfer module and includes at least one end effector. The control unit is configured to control a particle removal operation. The particle removal operation includes: (a) a step of cooling at least one dummy substrate placed on at least one substrate cooling stage to a first temperature, where the first temperature is 5 to 20°C; (b) a step of placing the cooled at least one dummy substrate on the plurality of lifter pins at the upper position; and (c) a step of maintaining the state where the cooled at least one dummy substrate is placed on the plurality of lifter pins at the upper position for a first period, where the first period is 30 seconds or more. Thereby, the substrate processing system 1 can remove the cause elements of particles from the accommodation chamber (substrate processing module) without providing a cooling mechanism in the accommodation chamber (substrate processing module) to be the target of particle removal.

[0058] Further, the substrate processing system 1 according to the embodiment includes a first accommodation chamber (vacuum transfer chamber 10, process module PM), a second accommodation chamber (load lock module LLM), a transfer unit (first transfer mechanism 15), and a control unit (control device 30). The first accommodation chamber has its interior set to a predetermined reduced pressure state, and at least one of the transfer of the substrate W and the processing of the substrate W is performed inside. The second accommodation chamber is provided with a cooling unit (cooling unit 63) for cooling the substrate W. The transfer unit transfers the substrate W between the first accommodation chamber and the second accommodation chamber. When removing particles generated by the first accommodation chamber, the control unit controls the transfer unit to transfer the substrate W to the second accommodation chamber, cool the substrate W by the cooling unit, and then transfer the cooled substrate W to the first accommodation chamber. Thereby, the substrate processing system 1 can remove the causative elements of particles from the accommodation chamber (first accommodation chamber) without providing a cooling mechanism in the accommodation chamber (first accommodation chamber) to be the target of particle removal.

[0059] Further, the control unit controls the transfer unit to maintain the state in which the cooled substrate W is placed in the first accommodation chamber for a predetermined time or more without performing substrate processing in the first accommodation chamber, and then take out the substrate W from the first accommodation chamber. Thereby, the substrate processing system 1 can attach the causative elements of the moisture particles in the first accommodation chamber to the cooled substrate W, so that the causative elements of particles can be removed from the first accommodation chamber.

[0060] Further, the control unit controls the transfer unit to continuously repeat a plurality of times the operation of transferring the substrate W to the second accommodation chamber, cooling it by the cooling unit, and then transferring it to the first accommodation chamber. Thereby, the substrate processing system 1 can significantly reduce the causative elements of particles from the first accommodation chamber.

[0061] Further, the control unit controls the transfer unit to reciprocate the same substrate W between the second accommodation chamber and the first accommodation chamber and perform a plurality of repetitions. Since the causative elements of particles adhere to the substrate W, by removing the causative elements using the same substrate W, the number of substrates W contaminated by the causative elements can be reduced.

[0062] Further, the first accommodation chamber is heated. The substrate W is cooled by the cooling unit so that the temperature difference from the first accommodation chamber is 20°C or more. Thereby, the substrate processing system 1 can attach the particle-causing elements to the substrate W by thermophoresis due to the temperature difference.

[0063] Also, a plurality of cooling units are provided to cool a plurality of substrates W. The transfer unit is capable of holding and transferring a plurality of substrates W. The control unit controls the transfer unit to hold a plurality of substrates W cooled by the plurality of cooling units and transfer them to the first accommodation chamber. Thereby, since the area of the portion where the cause elements can adhere increases, the substrate processing system 1 can quickly remove the particle-causing elements.

[0064] Also, the first accommodation chamber is a vacuum transfer chamber 10 that transfers the substrate W to the process module PM that performs substrate processing. Thereby, even when the vacuum transfer chamber 10 is opened to the atmosphere, the substrate processing system 1 can remove the particle-causing elements from the vacuum transfer chamber 10 without providing a cooling mechanism in the vacuum transfer chamber 10.

[0065] Also, the control unit controls the transfer unit to continuously repeat a plurality of times of transferring the substrate W to the second accommodation chamber, cooling it by the cooling unit, and then transferring the cooled substrate W to different positions in the vacuum transfer chamber 10. Thereby, since the substrate processing system 1 can remove the particle-causing elements at each position from the inside of the vacuum transfer chamber 10, the cause elements in the vacuum transfer chamber 10 can be quickly reduced.

[0066] Also, the first accommodation chamber is a process module PM that performs substrate processing. Thereby, even when the process module PM is opened to the atmosphere, the substrate processing system 1 can remove the particle-causing elements from the process module PM without providing a cooling mechanism in the process module PM.

[0067] Further, the process module PM has a stage 51 for placing the substrate W inside, and a lifting mechanism (support pin 52) for lifting and lowering the substrate W with respect to the stage 51 is provided on the stage 51. After the control unit conveys the substrate W to the second storage chamber and cools it by the cooling unit, it conveys the cooled substrate W into the process module PM, raises the lifting mechanism, maintains the state where the substrate W is separated from the stage 51, and then controls the conveying unit and the lifting mechanism to take out the substrate W from the process module PM. As a result, the substrate processing system 1 can attach the causative elements of particles to both sides of the substrate W, so that the causative elements of particles can be quickly removed.

[0068] As described above, the embodiments have been described. However, the embodiments disclosed this time should be considered as illustrative in all respects and not restrictive. In fact, the above-described embodiments can be embodied in various forms. Also, the above-described embodiments may be omitted, replaced, or changed in various forms without departing from the scope of the claims and their gist.

[0069] For example, in the above embodiment, the case where the substrate W is a semiconductor wafer has been described as an example, but it is not limited thereto. The substrate can be any substrate.

[0070] Note that the embodiments disclosed this time should be considered as illustrative in all respects and not restrictive. In fact, the above-described embodiments can be embodied in various forms. Also, the above embodiments may be omitted, replaced, or changed in various forms without departing from the scope of the appended claims and their gist.

Description of Reference Numerals

[0071] 1 Substrate processing system 10 Vacuum transfer chamber 15 First transfer mechanism 15a First arm 15b Second arm 20 Atmospheric pressure transfer chamber 25 Second transfer mechanism 25a Arm 27a First pick 27b Second pick 30 Control device 31 Memory unit 32 Processing unit 33 Input / output interface 34 Display unit 51 Stage 52 Support pin 61 Stage 62 Support pin 63 Cooling unit LLM1,LLM2 Load lock module LP1~LP5 Load port PM1~PM8 Process module GV Gate valve W Substrate DW Dummy wafer

Claims

1. A vacuum transfer module, a substrate processing module connected to the vacuum transfer module and configured to process a substrate in a reduced-pressure environment, a normal-pressure transfer chamber, a load lock module connected to the vacuum transfer module and the normal-pressure transfer chamber, at least one substrate cooling stage disposed in the load lock module, at least one substrate transfer robot disposed in the vacuum transfer module and including at least one end effector, and a control unit configured to control a particle removal operation, wherein the particle removal operation (a) is a step of cooling at least one dummy substrate placed on the at least one substrate cooling stage in the load lock module to a first temperature, and the first temperature is 5 to 20°C, (b) is a step of maintaining the at least one end effector at any one of a plurality of positions in the vacuum transfer module for a first period while the at least one cooled dummy substrate is placed on the at least one end effector, and the first period is 30 seconds or more, and the control unit executes (b) after executing (a), and during (b), particles in the vacuum transfer module adhere to the at least one cooled dummy substrate A substrate processing system.

2. The first temperature is 10 to 15°C The substrate processing system according to Claim 1.

3. The first period is 60 seconds or more The substrate processing system according to Claim 1 or 2.

4. (a) and (b) are alternately repeated a plurality of times The substrate processing system according to any one of Claims 1 to 3.

5. (a) and (b) are alternately repeated 5 times or more The substrate processing system according to any one of Claims 1 to 3.

6. It includes a heater, and the control unit executes the particle removal operation by controlling the heater to heat the substrate processing module or the vacuum transfer module for 3 hours or more before (a). The substrate processing system according to any one of Claims 1 to 5.

7. It further includes a second substrate cooling stage disposed in a second load lock module, and the at least one end effector has a first end effector and a second end effector, The particle removal operation is (a) a step of cooling a first dummy substrate and a second dummy substrate placed on at least one of the substrate cooling stage and the second substrate cooling stage to the first temperature; (b) a step of maintaining the first end effector at a first position among the plurality of positions for the first period and the second end effector at a second position among the plurality of positions for the first period while the cooled first dummy substrate and second dummy substrate are respectively placed on the first end effector and the second end effector. The substrate processing system according to any one of claims 1 to 3.

8. A vacuum transfer module; A substrate processing module connected to the vacuum transfer module and configured to process a substrate in a reduced-pressure environment; An atmospheric-pressure transfer chamber; A load lock module connected to the vacuum transfer module and the atmospheric-pressure transfer chamber; At least one substrate cooling stage disposed in the load lock module; At least one substrate transfer robot disposed in the vacuum transfer module and including at least one end effector; A particle removal method for a substrate processing system including: The particle removal method includes: (a) a step of cooling at least one dummy substrate placed on the at least one substrate cooling stage in the load lock module to a first temperature, wherein the first temperature is 5 to 20°C; (b) a step of maintaining the at least one end effector at any one of a plurality of positions in the vacuum transfer module for a first period while the at least one cooled dummy substrate is placed on the at least one end effector, wherein the first period is 30 seconds or more. having The particle removal method performs (b) after performing (a), and during (b), particles in the vacuum transfer module adhere to the at least one cooled dummy substrate. Particle removal method.

9. The particles removed by the particle removal operation include particles generated by aggregation of moisture. The substrate processing system according to claim 1.

10. The particle removal operation is performed after evacuation after the vacuum transfer module is opened to the atmosphere. The substrate processing system according to claim 1.

11. The at least one dummy substrate used in the particle removal operation is heated to 50° C. or higher in a cleaning chamber connected to the vacuum transfer module to remove particles. The substrate processing system according to claim 1.

12. The particles are removed from the at least one dummy substrate by generating high-frequency plasma in a cleaning chamber connected to the vacuum transfer module. The substrate processing system according to claim 1.

13. Before the step (a), the control unit executes the particle removal operation by controlling a heater to heat the substrate processing module or the vacuum transfer module for 3 hours or more. The substrate processing system according to claim 1.

14. In the step (a), the at least one dummy substrate is cooled in an air atmosphere. The substrate processing system according to claim 1.

15. One of the plurality of positions in the vacuum transfer module is near the loading / unloading outlet of the substrate processing module in the vacuum transfer module. The substrate processing system according to claim 1.

16. having a plurality of substrate processing modules including the substrate processing module, each time the steps (a) and (b) are repeated, the at least one cooled dummy substrate placed on the at least one end effector is sequentially transported to the vicinity of the loading / unloading outlet of each substrate processing module in the vacuum transfer module and maintained for a predetermined time or more. The substrate processing system according to claim 4.

17. having a plurality of substrate processing modules including the substrate processing module, each time the steps (a) and (b) are repeated, the at least one cooled dummy substrate placed on the at least one end effector is sequentially transported to the vicinity of the loading / unloading outlet of each substrate processing module in the vacuum transfer module and maintained for a predetermined time or more. The substrate processing system according to claim 5.

18. The first position is near the loading / unloading outlet of the substrate processing module in the vacuum transfer module, and the second position is near the central portion in the vacuum transfer module. The substrate processing system according to claim 7.

19. Repeating the steps (a) and (b) alternately a plurality of times. The substrate processing system according to claim 7. Repeat the above (a) and (b) alternately five or more times. The substrate processing system according to claim 7. The particle removal operation further includes a step of heating the substrate processing module or the vacuum transfer module for 3 hours or more before the above (a). The substrate processing system according to claim 7. Claim 22 A vacuum transfer module; A substrate processing module connected to the vacuum transfer module and configured to process a substrate in a reduced pressure environment; A substrate stage disposed in the substrate processing module and including a plurality of lifter pins, wherein the plurality of lifter pins are configured to move vertically between an upper position and a lower position; An atmospheric pressure transfer chamber; A load lock module connected to the vacuum transfer module and the atmospheric pressure transfer chamber; At least one substrate cooling stage disposed in the load lock module; At least one substrate transfer robot disposed in the vacuum transfer module and including at least one end effector; A control unit configured to control a particle removal operation, The particle removal operation includes: (a) cooling at least one dummy substrate placed on the at least one substrate cooling stage in the load lock module to a first temperature, the first temperature being 5 to 20 °C; (b) placing the cooled at least one dummy substrate on the plurality of lifter pins at the upper position; (c) maintaining the state in which the cooled at least one dummy substrate is placed on the plurality of lifter pins at the upper position for a first period, the first period being 30 seconds or more; The control unit executes the above (b) and (c) after executing the above (a), and during the above (c), particles in the substrate processing module adhere to the at least one cooled dummy substrate. A substrate processing system. Claim 23 A vacuum transfer module; A substrate processing module connected to the vacuum transfer module and configured to process a substrate in a reduced pressure environment; A substrate stage disposed in the substrate processing module and including a plurality of lifter pins, wherein the plurality of lifter pins are configured to move vertically between an upper position and a lower position; An atmospheric pressure transfer chamber; A load lock module connected to the vacuum transfer module and the atmospheric pressure transfer chamber, At least one substrate cooling stage disposed within the load lock module, At least one substrate transfer robot disposed within the vacuum transfer module and including at least one end effector, A particle removal method for a substrate processing system comprising: The particle removal method comprises: (a) Cooling at least one dummy substrate placed on the at least one substrate cooling stage in the load lock module to a first temperature, wherein the first temperature is 5 to 20 °C; (b) Placing the cooled at least one dummy substrate on the plurality of lifter pins at the upper position; (c) Maintaining the state in which the cooled at least one dummy substrate is placed on the plurality of lifter pins at the upper position for a first period, wherein the first period is 30 seconds or more; The method having: The particle removal method executes (b) and (c) after executing (a), and during (c), particles in the substrate processing module adhere to the at least one cooled dummy substrate. Particle removal method.

24. In (a), cooling the at least one dummy substrate in an air atmosphere The substrate processing system according to claim 22.

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