Substrate Processing System and Substrate Processing Method

Abstract

A substrate processing system (1) to be connected to an exposure device (5) comprises: a substrate processing device (2) which performs processing on a substrate; and a first supply path (110) which connects the substrate processing device and the exposure device and supplies cooling water used by the substrate processing device to the exposure device. According to this configuration, the total amount of cooling water used in the substrate processing system and the exposure device can be reduced.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing system and a substrate processing method.

Background Art

[0002] Patent Document 1 discloses a developing apparatus including a developing tank for performing a developing process, a developing solution storage tank for storing a developing solution supplied to the developing tank, and a circulation cooling system for circulating cooling water to cool the developing solution in the developing solution storage tank.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The technology according to the present disclosure reduces the total amount of cooling water used in a substrate processing system and an exposure apparatus.

Means for Solving the Problems

[0005] One aspect of the present disclosure is a substrate processing system connected to an exposure apparatus, including a substrate processing apparatus that performs processing on a substrate, a first supply path that connects the substrate processing apparatus and the exposure apparatus and supplies the cooling water used in the substrate processing apparatus to the exposure apparatus. A gas supply device that supplies an atmosphere gas during substrate processing to the substrate processing apparatus, a second supply path that connects the gas supply device and the exposure apparatus and supplies the cooling water used by the gas supply device to the exposure apparatus, and.

Effects of the Invention

[0006] According to the present disclosure, the total amount of cooling water used in a substrate processing system and an exposure apparatus can be reduced.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

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Figure 7

Mode for Carrying Out the Invention

[0008] In a manufacturing process of a semiconductor device or the like, predetermined processing is performed to form a resist pattern on a substrate such as a semiconductor wafer (hereinafter referred to as "wafer"). The above-mentioned predetermined processing includes, for example, a resist coating process of supplying a resist solution onto a substrate to form a resist film, an exposure process of exposing the film, a heat treatment process of heating the substrate before and after the exposure process, a development process of developing the exposed film, and the like.

[0009] The above-mentioned resist coating process, heat treatment process, and development process are respectively performed in a resist coating unit, a heat treatment unit, and a development processing unit. Units for performing processing other than these exposure processes are mounted on a coating and developing processing apparatus which is a substrate processing apparatus. This coating and developing processing apparatus is used in connection with an exposure apparatus that performs an exposure process.

[0010] By the way, a large amount of cooling water is used in the coating and developing processing apparatus. For example, cooling water is used for cooling a developing solution used in the development process and for a substrate after the heat treatment. In addition, cooling water is also used in the exposure apparatus. Therefore, the total amount of cooling water used by the coating / developing processing apparatus and the exposure apparatus is very large.

[0011] Therefore, the technology according to the present disclosure reduces the total amount of cooling water used in a substrate processing system including a substrate processing apparatus such as a coating / developing processing apparatus and an exposure apparatus.

[0012] Hereinafter, the substrate processing system and the substrate processing method according to the present embodiment will be described with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

[0013] (First Embodiment) <Substrate Processing System> FIG. 1 is a diagram schematically showing the configuration of a substrate processing system according to the first embodiment. FIG. 2 is an explanatory diagram showing an outline of the internal configuration of a coating / developing processing apparatus as a substrate processing apparatus included in the substrate processing system of FIG. 1. FIG. 3 is a diagram showing an example of a supply form of an atmospheric gas to the coating / developing processing apparatus.

[0014] As shown in FIG. 1, the substrate processing system 1 includes a coating / developing processing apparatus 2, a cooling water supply apparatus 3, and a gas supply apparatus 4. An exposure apparatus 5 is connected to the coating / developing processing apparatus 2.

[0015] The coating / developing processing apparatus 2 performs processing on a wafer W as a substrate. As shown in FIG. 2, the coating / developing processing apparatus 2 has a cassette station 10 into which a cassette C containing a plurality of wafers W is carried in and out, and a processing station 11 including a plurality of various processing units that perform predetermined processing on the wafer W. The coating / developing processing apparatus 2 has a configuration in which an interface station 12 for transferring the wafer W between the cassette station 10, the processing station 11, and the exposure apparatus 5 adjacent to the processing station 11 is integrally connected.

[0016] The cassette station 10 is provided with a cassette mounting table 20. On the cassette mounting table 20, a plurality of cassette mounting plates 21 for mounting the cassette C are provided when the cassette C is carried in and out with respect to the outside of the coating and developing apparatus 2.

[0017] The cassette station 10 is provided with a wafer transfer unit 23 that is movable on a transfer path 22 extending in the X direction. The wafer transfer unit 23 is also movable in the vertical direction and around the vertical axis (θ direction), and can transfer the wafer W between the cassette C on each cassette mounting plate 21 and a transfer unit (not shown) of the third block G3 of the processing station 11.

[0018] The processing station 11 is provided with a plurality of, for example, four blocks G1, G2, G3, G4 each having various units. For example, the first block G1 is provided on the front side (the negative X direction side in FIG. 2) of the processing station 11, and the second block G2 is provided on the back side (the positive X direction side in FIG. 2) of the processing station 11. Also, the third block G3 is provided on the cassette station 10 side (the negative Y direction side in FIG. 2) of the processing station 11, and the fourth block G4 is provided on the interface station 12 side (the positive Y direction side in FIG. 2) of the processing station 11.

[0019] The first block G1 is provided with a liquid processing unit 30 such as a resist coating unit and a developing processing unit. As shown in FIG. 3, a plurality of the liquid processing units 30 are arranged side by side in the horizontal direction and the vertical direction. The liquid processing unit 30 supplies a predetermined processing liquid onto the wafer W, for example, by the spin coating method. In the spin coating method, for example, the processing liquid is discharged onto the wafer W from a discharge nozzle, and the wafer W is rotated to spread the processing liquid on the surface of the wafer W.

[0020] As shown in FIG. 2, the second block G2 is provided with a heat treatment unit 40 that performs heat treatment such as heating and cooling of the wafer W. Similar to the liquid processing unit 30, a plurality of the heat treatment units 40 are arranged side by side in the horizontal direction and the vertical direction. The heat treatment unit 40 has a hot plate 41 and a cooling plate 42. The hot plate 41 has a wafer W placed thereon and heats the placed wafer W. The cooling plate 42 has a wafer W placed thereon and cools the placed wafer W. In one embodiment, a flow path for cooling water is provided inside the cooling plate 42.

[0021] For example, in the third block G3 and the fourth block G4, transfer units (not shown) are provided in multiple stages respectively.

[0022] A wafer transfer region D is formed in the region surrounded by the first block G1 to the fourth block G4. A wafer transfer unit 50 is disposed in the wafer transfer region D.

[0023] The wafer transfer unit 50 has a transfer arm 50a that is movable in, for example, the Y direction, X direction, θ direction, and vertical direction. The wafer transfer unit 50 moves within the wafer transfer region D and can transfer the wafer W to predetermined units in the surrounding first block G1, second block G2, third block G3, and fourth block G4.

[0024] Also, a wafer transfer unit 60 is provided adjacent to the positive X - direction side of the third block G3. The wafer transfer unit 60 has a transfer arm 60a that is movable in, for example, the X direction, θ direction, and vertical direction. The wafer transfer unit 60 can move up and down while supporting the wafer W and transfer the wafer W to each transfer unit (not shown) in the third block G3.

[0025] An interface station 12 is provided with a wafer transfer unit 70 and a transfer unit 71. The wafer transfer unit 70 has a transfer arm 70a that is movable in, for example, the Y direction, θ direction, and vertical direction. The wafer transfer unit 70 can support the wafer W on the transfer arm 70a, for example, and transfer the wafer W between the transfer unit 71 in the fourth block G4 and the exposure apparatus 5.

[0026] As shown in FIG. 1, the cooling water supply device 3 has supply paths 100 and 110 and a return path 120. The supply path 100 supplies the cooling water used in the coating and developing processing device 2 to the coating and developing processing device 2. In the coating and developing processing device 2, the cooling water is used, for example, for cooling the wafer W using the cooling plate 42 and for cooling processing liquids such as the developing solution. The cooling water supplied to the coating and developing processing device 2 is required to be, for example, 25° C. or lower, and the temperature of the cooling water actually supplied to the coating and developing processing device 2 is, for example, 15° C. to 25° C. Further, the temperature of the cooling water after being used in the coating and developing processing device 2 is, for example, 25° C. to 35° C., although it depends on the purpose and mode of use of the cooling water.

[0027] The supply path 110 connects the coating and developing processing device 2 and the exposure device 5, and supplies the cooling water used in the coating and developing processing device 2 to the exposure device 5. In the exposure device 5, the cooling water is used, for example, for cooling the light source for exposure processing. The cooling water used in the exposure device 5 is often allowed to be at a higher temperature than the cooling water used in the coating and developing processing device 2, and the required temperature is, for example, 35° C. or lower.

[0028] The return path 120 returns the cooling water used in the exposure device 5 to a chiller unit (not shown). The cooling water returned to the chiller unit is supplied again to the coating and developing processing device 2 via the supply path 100. The supply paths 130 and 140 of the cooling water supply device 3 will be described later.

[0029] The gas supply device 4 supplies an atmosphere gas for substrate processing to the coating and developing processing device 2. While the coating and developing processing device 2 and the exposure device 5 are installed on the upper surface of the floor F in the clean room CR, the gas supply device 4 is installed in the underfloor space UR which is the space below the floor F. The floor F is composed of a breathable floor material usually called a grating. Therefore, the atmosphere in the underfloor space UR is the atmosphere derived from the clean room CR. From this, the atmosphere in the installation area in the present disclosure includes not only the atmosphere in the clean room CR where the coating and developing processing device 2 and the exposure device 5 etc. are installed, but also the atmosphere in the underfloor space UR of the floor F where the coating and developing processing device 2 and the exposure device 5 etc. are installed.

[0030] The gas supply device 4 has an intake part 201 for taking in the atmosphere of the underfloor space UR, and adjusts the temperature and humidity of the atmosphere of the underfloor space UR taken in from the intake part 201 and supplies it as an atmosphere gas to the coating and developing processing device 2. The gas supply device 4 has, for example, a cooling part 203, a heating part 204, and a humidifying part 205 in this order in the flow path in the casing 202. The cooling part 203 is composed of, for example, a cooling coil. The cooling part 203 has a function of cooling the gas taken in from the intake part 201 to a dew point temperature or lower and dehumidifying it with, for example, cooling water or refrigerant supplied from the cooling unit 206.

[0031] The cooling unit 206 includes various devices for realizing a refrigeration cycle composed of, for example, a compressor, an expansion valve, etc. The cooling unit 206 may be, for example, a heat pump configuration. And the illustrated cooling unit 206 has a configuration of cooling the refrigerant heated up in the refrigeration cycle with cooling water (for example, 15°C to 25°C) supplied from the outside. Therefore, the cooling water used in the cooling unit 206 and discharged from the cooling unit 206 is heated up (for example, 25°C to 40°C).

[0032] The heating part 204 functions as a so-called reheater, and examples thereof include a heater that generates heat by supplying electric power and a heating coil that heats by supplying warm water.

[0033] The humidifying unit 205 can employ, for example, a humidifier configured to spray water or supply steam.

[0034] By the cooling unit 203, heating unit 204, and humidifying unit 205 listed above, the gas taken in from the intake unit 201 is first dehumidified by the cooling unit 203, then heated to a desired temperature by the heating unit 204, and then humidified to a desired humidity by the humidifying unit 205. And the gas after being adjusted to the desired temperature and humidity in this way is supplied as an ambient gas to the coating and developing processing apparatus 2 by the fan 207, for example, through the duct 210. Note that the duct 210 may be a closed flow path that allows the gas to flow through without leakage, and may be, for example, a pipe or a tube.

[0035] The ambient gas whose temperature and humidity have been adjusted by the gas supply device 4 is supplied to the ceiling portions of each stage by the main ducts 81 and 82 provided in the coating and developing processing apparatus 2 through the ducts 211 and 212 branched from the duct 210, for example, as shown in FIG. 3. The ambient gas supplied to the ceiling portion of each stage is supplied to each liquid processing unit 30. The temperature and humidity of the ambient gas are generally, for example, 23°C and 45%RH, but the suitable temperature and humidity are not limited to this depending on the type of the liquid processing unit 30 at the supply destination and the content of the processing.

[0036] As shown in FIG. 1, the aforementioned cooling water supply device 3 further has supply paths 130 and 140. The supply path 130 supplies the cooling water used in the gas supply device 4 to the gas supply device 4. Specifically, the supply path 130 supplies the cooling water used in the cooling unit 206 of the gas supply device 4 to the cooling unit 206. The temperature of the cooling water supplied to the cooling unit 206 is, as described above, for example, 15°C to 25°C. Also, the temperature of the cooling water after being used in the cooling unit 206 is, for example, 25°C to 40°C.

[0037] The supply path 140 connects the gas supply device 4 and the exposure device 5, and supplies the cooling water used in the gas supply device 4 to the exposure device 5.

[0038] In this embodiment, they merge on the exposure apparatus 5 side of the supply paths 110 and 140. Therefore, the cooling water supply device 3 mixes the cooling water used in the coating / developing processing device 2 and the cooling water used in the gas supply device 4 and supplies the mixture to the exposure apparatus 5. Further, the cooling water used in the exposure apparatus 5 is returned to a chiller unit (not shown) via the return path 120, cooled to a predetermined temperature, distributed to the supply paths 100 and 130, and supplied again to the coating / developing processing device 2 and the gas supply device 4. In other words, in this embodiment, the supply paths 100 and 110 and the return path 120 constitute a first circulation path that is a circulation path for the cooling water for the coating / developing processing device 2 and the exposure apparatus 5, and the supply paths 130 and 140 and the return path 120 constitute a second circulation path that is a circulation path for the cooling water for the gas supply device 4 and the exposure apparatus 5. And the first circulation path and the second circulation path share piping such as the return path 120 and a chiller unit or the like.

[0039] Although not shown, the cooling water supply device 3 has a pumping means such as a pump in order to pump the cooling water cooled by the chiller unit to the coating / developing processing device 2 and the gas supply device 4.

[0040] Further, a control device U is provided in the substrate processing system 1. The control device U is a computer including a processor such as a CPU and a memory, and has a program storage unit (not shown). A program for temperature and humidity adjustment in the gas supply device 4 is stored in the program storage unit. Of course, this control device U may be shared with a control device that controls various processing units and transfer units mounted on the substrate processing system 1 and a control device that controls various processes of the exposure apparatus 5. And the above program may be recorded on a computer-readable storage medium and installed from the storage medium to the control device. The above storage medium may be temporary or non-temporary. Also, the above program may be installed via the Internet. Further, part or all of the program may be realized by dedicated hardware (circuit board).

[0041] <Main functions and effects> As described above, in this embodiment, the substrate processing system 1 connected to the exposure apparatus 5 includes a supply path 110 that connects the coating / developing processing apparatus 2 and the exposure apparatus 5 and supplies the cooling water used in the coating / developing processing apparatus 2 to the exposure apparatus 5. That is, in this embodiment, instead of separately providing a supply path for the cooling water to the coating / developing processing apparatus 2 and a supply path for the cooling water to the exposure apparatus 5, the supply path 110 is provided so that the cooling water used in the coating / developing processing apparatus 2 can also be used in the exposure apparatus 5. Therefore, according to this embodiment, the total amount of cooling water used in the substrate processing system 1 and the exposure apparatus 5 can be reduced.

[0042] Further, in this embodiment, the substrate processing system 1 includes a gas supply apparatus 4 that supplies an atmosphere gas to the coating / developing processing apparatus 2. Then, the substrate processing system 1 includes a supply path 140 that connects the gas supply apparatus 4 and the exposure apparatus 5 and supplies the cooling water used in the gas supply apparatus 4 to the exposure apparatus 5. That is, in this embodiment, the above-described supply path 140 is provided so that the cooling water supplied by the gas supply apparatus 4 can also be used in the exposure apparatus 5. Therefore, according to this embodiment, the total amount of cooling water used in the substrate processing system 1 and the exposure apparatus 5 can be further reduced.

[0043] That is, in this embodiment, by taking advantage of the fact that the allowable temperature of the cooling water in the exposure apparatus 5 is higher than that in the coating / developing processing apparatus 2 and the gas supply apparatus 4, the cooling water used in the coating / developing processing apparatus 2 and the gas supply apparatus 4 is reused in the exposure apparatus 5, thereby suppressing the total amount of cooling water used.

[0044] Furthermore, in the present embodiment, the supply path 110 and the supply path 140 merge on the exposure apparatus 5 side, and the cooling water supply apparatus 3 mixes the cooling water used in the coating / development processing apparatus 2 and the cooling water used in the gas supply apparatus 4 and supplies the mixture to the exposure apparatus 5. Therefore, for example, when the temperature of the cooling water used in the gas supply apparatus 4 is higher than the allowable temperature of the cooling water in the exposure apparatus 5 and the temperature of the cooling water used in the coating / development processing apparatus 2 is lower than the allowable temperature, the cooling water with a temperature lower than the allowable temperature can be supplied to the exposure apparatus 5 by mixing as described above.

[0045] (Second Embodiment) FIG. 4 is a diagram schematically showing the configuration of a substrate processing system according to the second embodiment. In the cooling water supply apparatus 3A according to the present embodiment, as shown in the figure, a flow rate adjustment valve 301 as a first flow rate adjustment unit is provided in a supply path 110A connecting the coating / development processing apparatus 2 and the exposure apparatus 5. Also, a flow rate adjustment valve 302 as a second flow rate adjustment unit is provided in a supply path 140A connecting the gas supply apparatus 4 and the exposure apparatus 5. Specifically, the flow rate adjustment valve 301 is provided on the coating / development processing apparatus 2 side from the confluence portion with the supply path 140A in the supply path 110A. Also, specifically, the flow rate adjustment valve 302 is provided on the gas supply apparatus 4 side from the confluence portion with the supply path 110A in the supply path 140A. Furthermore, in the present embodiment, a temperature sensor 310 for measuring the temperature of the cooling water supplied to the exposure apparatus 5 is provided. Specifically, the temperature sensor 310 is provided at the confluence portion of the supply path 110A and the supply path 140A.

[0046] And in this embodiment, the control device U controls the flow rate adjustment valves 301 and 302 based on the measurement results of the temperature sensor 310, and adjusts the mixing ratio of the cooling water supplied to the exposure apparatus 5 via the supply path 110A and the cooling water supplied to the exposure apparatus 5 via the supply path 140A. Thereby, the temperature of the cooling water supplied from the cooling water supply device 3A to the exposure apparatus 5 can be made appropriate. Specifically, when the temperature of either the cooling water used in the coating and developing processing apparatus 2 or the cooling water used in the gas supply device 4 is higher than the allowable temperature of the cooling water in the exposure apparatus 5, the temperature of the cooling water supplied from the cooling water supply device 3A to the exposure apparatus 5 can be made not higher than the allowable temperature.

[0047] Also, when the temperature sensor 310 is provided as in this embodiment, the control device U may notify the exposure apparatus 5 of the measurement result by the temperature sensor 310, that is, the information on the temperature of the cooling water supplied to the exposure apparatus 5. For example, in the exposure apparatus 5, based on the information on the temperature of the cooling water supplied to the exposure apparatus 5 notified, it is possible to perform a determination as to whether or not it is possible to appropriately perform cooling in the exposure apparatus 5 using the cooling water supplied to the exposure apparatus 5. Note that the information regarding the cooling water supplied from the cooling water supply device 3 to the exposure apparatus 5 (hereinafter referred to as cooling water information) notified by the control device U is not limited to the temperature information. For example, a flow rate sensor 311 for measuring the flow rate of the cooling water supplied to the exposure apparatus 5 may be provided, and the control device U may notify the exposure apparatus 5 of the measurement result by the flow rate sensor 311 as the cooling water information. Specifically, the flow rate sensor 311 is provided, for example, at the confluence of the supply path 110A and the supply path 140A.

[0048] (Third Embodiment) FIG. 5 is a diagram schematically showing the configuration of the substrate processing system according to the third embodiment. In the cooling water supply device 3B according to the present embodiment, a cooling unit 320 is provided as a cooling unit that cools the cooling water supplied to the exposure device 5. The cooling unit 320 cools the cooling water supplied to the exposure device 5 by heat exchange with, for example, another cooling water. The cooling unit 320 has, for example, a circulation path 321 for the other cooling water, and a chiller unit (not shown) for cooling the other cooling water whose temperature has risen by heat exchange is provided in the circulation path 321.

[0049] Further, in the example of the figure, the cooling unit 320 is provided at the confluence of a supply path 110B connecting the coating and developing processing apparatus 2 and the exposure device 5 and a supply path 140B connecting the gas supply device 4 and the exposure device 5.

[0050] By providing the cooling unit 320 as described above, the temperature of the cooling water obtained by mixing the cooling water used in the coating and developing processing apparatus 2 and the cooling water used in the gas supply device 4 can be more reliably made equal to or lower than the allowable temperature of the cooling water in the exposure device 5. Also, by providing the cooling unit 320 at the confluence of the supply path 110B and the supply path 140B, an increase in the total amount of cooling water used due to the provision of the cooling unit 320 can be suppressed.

[0051] However, the installation position of the cooling unit 320 is not limited to the above example. For example, it may be provided on either the coating and developing processing apparatus 2 side from the confluence in the supply path 110B or the gas supply device 4 side from the confluence in the supply path 140B, or may be provided on both sides.

[0052] (Fourth Embodiment) FIG. 6 is a diagram schematically showing the configuration of a substrate processing system according to the fourth embodiment. In the cooling water supply device 3C according to this embodiment, as shown in the figure, a pump 331 for boosting the cooling water in the supply path 110C that connects the coating and developing processing device 2 and the exposure device 5 is provided in the supply path 110C. Also, a pump 332 for boosting the cooling water in the supply path 140C that connects the gas supply device 4 and the exposure device 5 is provided in the supply path 140C. Specifically, the pump 331 is provided, for example, on the coating and developing processing device 2 side from the confluence portion of the supply path 110C with the supply path 140C in the supply path 110C. Also, specifically, the pump 332 is provided on the gas supply device 4 side from the confluence portion of the supply path 140C with the supply path 110C in the supply path 140C.

[0053] According to this configuration, even if the pressure loss in the flow path of the cooling water in the coating and developing processing device 2 or the pressure loss in the flow path of the cooling water in the gas supply device 4 is large, the cooling water can be supplied from the cooling water supply device 3C to the exposure device 5 at an appropriate pressure, that is, at an appropriate flow rate.

[0054] (Modification of the Fourth Embodiment) FIG. 7 is a diagram schematically showing the configuration of a substrate processing system according to a modification of the fourth embodiment. In this example, a pump 340 that integrates a pump for boosting the cooling water in the supply path 110D that connects the coating and developing processing device 2 and the exposure device 5 and a pump for boosting the cooling water in the supply path 140D that connects the gas supply device 4 and the exposure device 5 is provided at the confluence portion of the supply path 110D and the supply path 140D. In other words, the pump for the supply path 110D also serves as the pump for the supply path 140D. Also according to this configuration, regardless of the pressure loss in the coating and developing processing device 2 or the gas supply device 4, the cooling water can be supplied to the exposure device 5 at an appropriate pressure, that is, at an appropriate flow rate.

[0055] Also, according to this example, since the number of pumps can be reduced, cost reduction can be achieved.

[0056] The embodiments disclosed herein should be considered illustrative in all respects and not restrictive. The above embodiments may be omitted, replaced, or changed in various forms without departing from the scope and spirit of the appended claims.

Explanation of Signs

[0057] 1 Substrate processing system 2 Coating and developing processing apparatus 5 Exposure apparatus 110, 110A, 110B, 110C, 110D Supply path W Wafer

Claims

1. A substrate processing system connected to an exposure apparatus, comprising: a substrate processing apparatus that performs processing on a substrate; a first supply path that connects the substrate processing apparatus and the exposure apparatus and supplies the cooling water used in the substrate processing apparatus to the exposure apparatus; a gas supply apparatus that supplies an atmosphere gas during substrate processing to the substrate processing apparatus; a second supply path that connects the gas supply apparatus and the exposure apparatus and supplies the cooling water used in the gas supply apparatus to the exposure apparatus.

2. The substrate processing system according to claim 1, further comprising a first flow rate adjuster that adjusts the supply amount of the cooling water from the first supply path, and a second flow rate adjuster that adjusts the supply amount of the cooling water from the second supply path.

3. The substrate processing system according to claim 2, wherein the first flow rate adjuster and the second flow rate adjuster adjust the mixing ratio of the cooling water from the first supply path and the cooling water from the second supply path.

4. The substrate processing system according to any one of claims 1 to 3, further comprising a first pump that boosts the pressure of the cooling water in the first supply path and a second pump that boosts the pressure of the cooling water in the second supply path.

5. The substrate processing system according to claim 4, wherein the first pump is provided at a confluence portion of the first supply path and the second supply path and also serves as the second pump.

6. The substrate processing system according to any one of claims 1 to 5, further comprising a cooling unit that cools the cooling water supplied to the exposure apparatus.

7. The substrate processing system according to any one of claims 1 to 6, which notifies the exposure apparatus of information regarding the cooling water supplied to the exposure apparatus.

8. A substrate processing system connected to an exposure apparatus, comprising: a substrate processing apparatus that performs processing on a substrate; a gas supply apparatus that supplies an atmosphere gas during substrate processing to the substrate processing apparatus; a second supply path that connects the gas supply apparatus and the exposure apparatus and supplies the cooling water used in the gas supply apparatus to the exposure apparatus.

9. The substrate processing system according to claim 8, further comprising a second flow rate adjuster that adjusts the supply amount of the cooling water from the second supply path.

10. The substrate processing system according to claim 8 or 9, further comprising a second pump that boosts the pressure of the cooling water in the second supply path. ​ ​

11. The substrate processing system according to any one of claims 8 to 10, further comprising a cooling unit for cooling the cooling water supplied to the exposure apparatus.

12. The substrate processing system according to any one of claims 8 to 11, which notifies the exposure apparatus of information regarding the cooling water supplied to the exposure apparatus.

13. A substrate processing method using a substrate processing system connected to an exposure apparatus, a first step of supplying the cooling water used in the substrate processing apparatus to the exposure apparatus via a first supply path connecting the substrate processing apparatus and the exposure apparatus; a second step of supplying the cooling water used in the gas supply apparatus to the exposure apparatus via a second supply path connecting the gas supply apparatus for supplying an atmospheric gas during substrate processing to the substrate processing apparatus and the exposure apparatus, the substrate processing method including the second step.

14. The first step includes a first flow rate adjustment step of adjusting the supply amount of the cooling water from the first supply path.

15. The second step includes a second flow rate adjustment step of adjusting the supply flow rate of the cooling water from the second supply path.

16. The substrate processing method according to claim 14, wherein the first flow rate adjustment step and the second flow rate adjustment step adjust a mixing ratio of the cooling water from the first supply path and the cooling water from the second supply path.

17. The first step includes a step of boosting the pressure of the cooling water in the first supply path by a first pump.

18. The second step includes a step of boosting the pressure of the cooling water in the second supply path by a second pump.

19. The substrate processing method according to any one of claims 13 to 15, wherein the first pump is provided at a confluence portion of the first supply path and the second supply path and also serves as the second pump.

20. The substrate processing method according to any one of claims 13 to 17, further including a step of cooling the cooling water supplied to the exposure apparatus.

21. The substrate processing method according to any one of claims 13 to 18, further including a step of notifying the exposure apparatus of information regarding the cooling water supplied to the exposure apparatus.

22. A substrate processing method using a substrate processing system connected to an exposure apparatus, including a second step of supplying the cooling water used in the gas supply apparatus to the exposure apparatus via a second supply path connecting the gas supply apparatus for supplying an atmospheric gas during substrate processing to the substrate processing apparatus and the exposure apparatus.

21. The substrate processing method according to claim 20, wherein the second step includes a second flow rate adjustment step of adjusting a supply flow rate of cooling water from the second supply path.

22. The substrate processing method according to claim 20 or 21, wherein the second step includes a step of boosting the pressure of the cooling water in the second supply path by a second pump.

23. The substrate processing method according to any one of claims 20 to 22, further including a step of cooling the cooling water supplied to the exposure apparatus.

24. The substrate processing method according to any one of claims 20 to 23, further including a step of notifying the exposure apparatus of information regarding the cooling water supplied to the exposure apparatus.

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