surface-emitting laser

Abstract

The present invention provides a surface-emitting laser that can be produced at a good yield and has a configuration for confining current and light.　The surface-emitting laser comprises a first structure including a first multilayer film reflector, a second structure including a second multilayer film reflector, and a resonator that includes an active layer and is arranged between the first and second structures. A joining section is present in at least one location among the interior of the first structure, the interior of the second structure, the interior of the resonator, the area between the resonator and the first structure, and the area between the resonator and the second structure. At least one of the first and second structures joined by the joining section is provided with a first confining section for confining current, and at least one of the first and second structures is provided with a second confining section for confining at least light among current and light.

Description

[Technical Field]

[0001] The technology according to the present disclosure (hereinafter also referred to as "the technology") relates to a surface-emitting laser. [Background technology]

[0002] Conventionally, a surface-emitting laser has been known in which an active layer and an oxide confinement type current confinement layer (a structure that confines current and light) are arranged between first and second multilayer film reflectors, for example, using an AlGaAs-based compound semiconductor (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2006-351798 Summary of the Invention [Problem to be solved by the invention]

[0004] However, conventional surface-emitting lasers have room for improvement in terms of providing a surface-emitting laser that can be manufactured with a high yield and has a configuration that confines current and light.

[0005] Therefore, a main object of the present technology is to provide a surface-emitting laser that can be manufactured with a high yield and has a configuration that confines current and light. [Means for solving the problem]

[0006] The present technology includes a first structure including a first multilayer film reflector; a second structure including a second multilayer mirror; a resonator including an active layer disposed between the first and second structures; Equipped with a junction is present in at least one of the first structure, the second structure, the resonator, between the resonator and the first structure, and between the resonator and the second structure; A surface-emitting laser is provided in which a first confinement section that confines current is provided in at least one of a first component section on one side of the junction and a second component section on the other side, and a second confinement section that confines at least light out of current and light is provided in at least one of the first and second components. The first and second confinement portions may be provided in one of the first and second component portions. The first confinement portion may be provided in one of the first and second component portions, and the second confinement portion may be provided in the other. The second confinement section may be provided on a first bonding surface, which is the bonding surface of the first component with the second component, and / or a second bonding surface, which is the bonding surface of the second component with the first component. The first confinement section may be provided in a region of the first component that does not include a first bonding surface, which is the bonding surface of the first component with the second component, and / or in a region of the second component that does not include a second bonding surface, which is the bonding surface of the second component with the first component. The first confinement section may be provided in an area including a first bonding surface, which is the bonding surface of the first component with the second component, and / or an area including a second bonding surface, which is the bonding surface of the second component with the first component. The second confinement portion may be provided on a first bonding surface, which is the bonding surface of the first component with the second component, and / or a second bonding surface, which is the bonding surface of the second component with the first component, and the first confinement portion may be provided in a region of the first component that does not include the first bonding surface, which is the bonding surface of the first component with the second component, and / or a region of the second component that does not include the second bonding surface, which is the bonding surface of the second component with the first component. The second confinement section may be provided on a first bonding surface, which is the bonding surface of the first component with the second component, and / or a second bonding surface, which is the bonding surface of the second component with the first component, and the first confinement section may be provided in a region of the first component including the first bonding surface, which is the bonding surface of the first component with the second component, and / or a region of the second component including the second bonding surface, which is the bonding surface of the second component with the first component. The resonator may further include first and second clad layers disposed at positions sandwiching the active layer, and the junction may be present inside at least one of the first and second clad layers. The second confinement portion may be a layer present in a circularly shaped recess provided in at least one of the first and second bonding surfaces. The layer may be a low refractive index layer having a lower refractive index than the portion of the first component portion and / or the second component portion inside the recess. The low refractive index layer may have semi-insulating or insulating properties. The layer may have semi-insulating or insulating properties. The cross section of the recess may have a shape that becomes shallower toward the at least part of the central portion. The first confinement portion may have a higher electrical resistance than the portion surrounded by the first confinement portion. The first confinement portion may be an ion-implanted layer. The first confinement portion and the portion surrounded by the first confinement portion may be made of a compound semiconductor, and the first confinement portion may have a larger band gap than the portion surrounded by the first confinement portion. The first confinement portion may be a layer in which an impurity is diffused. The first confinement portion may be a layer into which ions are implanted and impurities are diffused. The first confinement portion may be a layer into which ions are implanted and / or impurities are diffused. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a cross-sectional view showing a configuration of a surface-emitting laser according to a first embodiment of the present technology. [Figure 2] 2 is a plan view of the first and second confinement sections of the surface-emitting laser of FIG. 1. FIG. [Figure 3] 38 is a flowchart for explaining a method for manufacturing the surface-emitting lasers of FIGS. 1 and 37. [Figure 4]FIG. 4 is a cross-sectional view for explaining the first step (first laminate production process) of FIG. 3. [Figure 5] 4 is a flowchart for explaining a second laminate generating process 1, which is an example of the second step (second laminate generating process) of FIG. 3. [Figure 6] FIG. 6 is a cross-sectional view showing the first step of FIG. 5. [Figure 7] FIG. 6 is a cross-sectional view showing a second step in FIG. 5. [Figure 8] FIG. 6 is a cross-sectional view showing a third step in FIG. 5. [Figure 9] FIG. 6 is a cross-sectional view showing a fourth step in FIG. 5. [Figure 10] FIG. 4 is a cross-sectional view showing the third step in FIG. 3 (before bonding). [Figure 11] FIG. 4 is a cross-sectional view showing the third step in FIG. 3 (after bonding). [Figure 12] FIG. 4 is a cross-sectional view showing a fourth step in FIG. 3. [Figure 13] FIG. 4 is a cross-sectional view showing a fifth step in FIG. 3. [Figure 14] FIG. 4 is a cross-sectional view showing a sixth step in FIG. 3. [Figure 15] FIG. 4 is a cross-sectional view showing the seventh step of FIG. 3. [Figure 16] FIG. 4 is a cross-sectional view showing an eighth step of FIG. 3. [Figure 17] FIG. 4 is a cross-sectional view showing the ninth step of FIG. 3. [Figure 18] FIG. 4 is a cross-sectional view showing the tenth step of FIG. 3. [Figure 19] FIG. 4 is a cross-sectional view showing the eleventh step of FIG. 3. [Figure 20] 1 is a cross-sectional view showing a configuration of a surface-emitting laser according to a first modified example of the first embodiment of the present technology. [Figure 21] 10 is a cross-sectional view showing a configuration of a surface-emitting laser according to a second modification of the first embodiment of the present technology. FIG. [Figure 22] FIG. 10 is a cross-sectional view showing a configuration of a surface-emitting laser according to a third modification of the first embodiment of the present technology. [Figure 23] FIG. 10 is a cross-sectional view showing a configuration of a surface-emitting laser according to a fourth modified example of the first embodiment of the present technology. [Figure 24] FIG. 10 is a cross-sectional view showing a configuration of a surface-emitting laser according to a fifth modified example of the first embodiment of the present technology. [Figure 25] FIG. 13 is a cross-sectional view showing a configuration of a surface-emitting laser according to a sixth modified example of the first embodiment of the present technology. [Figure 26] FIG. 13 is a cross-sectional view showing a configuration of a surface-emitting laser according to a seventh modified example of the first embodiment of the present technology. [Figure 27] FIG. 13 is a cross-sectional view showing a configuration of a surface-emitting laser according to an eighth modified example of the first embodiment of the present technology. [Figure 28] FIG. 13 is a cross-sectional view showing a configuration of a surface-emitting laser according to a ninth modification of the first embodiment of the present technology. [Figure 29] FIG. 22 is a cross-sectional view showing a configuration of a surface-emitting laser according to a tenth modification of the first embodiment of the present technology. [Figure 30] FIG. 20 is a cross-sectional view showing a configuration of a surface-emitting laser according to an eleventh modification of the first embodiment of the present technology. [Figure 31] FIG. 23 is a cross-sectional view showing a configuration of a surface-emitting laser according to a twelfth modification of the first embodiment of the present technology. [Figure 32] FIG. 23 is a cross-sectional view showing a configuration of a surface-emitting laser according to a thirteenth modification of the first embodiment of the present technology. [Figure 33] FIG. 23 is a cross-sectional view showing a configuration of a surface-emitting laser according to a fourteenth modification of the first embodiment of the present technology. [Figure 34] FIG. 20 is a cross-sectional view showing a configuration of a surface-emitting laser according to a fifteenth modification of the first embodiment of the present technology. [Figure 35] FIG. 4 is a cross-sectional view showing a configuration of a surface-emitting laser according to a second embodiment of the present technology. [Figure 36] FIG. 10 is a cross-sectional view showing a configuration of a surface-emitting laser according to a third embodiment of the present technology. [Figure 37] FIG. 10 is a cross-sectional view showing a configuration of a surface-emitting laser according to a fourth embodiment of the present technology. [Figure 38] 4 is a flowchart for explaining a second laminate generating process 2, which is an example of the second step in FIG. 3. [Figure 39] FIG. 39 is a cross-sectional view showing the first step of FIG. 38. [Figure 40]FIG. 39 is a cross-sectional view showing the second step of FIG. 38. [Figure 41] FIG. 39 is a cross-sectional view showing the third step of FIG. 38. [Figure 42] FIG. 4 is a cross-sectional view showing the third step in FIG. 3 (before bonding). [Figure 43] FIG. 4 is a cross-sectional view showing the third step in FIG. 3 (after bonding). [Figure 44] FIG. 4 is a cross-sectional view showing a fourth step in FIG. 3. [Figure 45] FIG. 4 is a cross-sectional view showing a fifth step in FIG. 3. [Figure 46] FIG. 4 is a cross-sectional view showing a sixth step in FIG. 3. [Figure 47] FIG. 4 is a cross-sectional view showing the seventh step of FIG. 3. [Figure 48] FIG. 4 is a cross-sectional view showing an eighth step of FIG. 3. [Figure 49] FIG. 4 is a cross-sectional view showing the ninth step of FIG. 3. [Figure 50] FIG. 4 is a cross-sectional view showing the tenth step of FIG. 3. [Figure 51] FIG. 4 is a cross-sectional view showing the eleventh step of FIG. 3. [Figure 52] FIG. 13 is a cross-sectional view showing a configuration of a surface-emitting laser according to a first modified example of the fourth embodiment of the present technology. [Figure 53] FIG. 13 is a cross-sectional view showing a configuration of a surface-emitting laser according to a second modification of the fourth embodiment of the present technology. [Figure 54] FIG. 13 is a cross-sectional view showing a configuration of a surface-emitting laser according to a third modified example of the fourth embodiment of the present technology. [Figure 55] FIG. 13 is a cross-sectional view showing a configuration of a surface-emitting laser according to a fourth modification of the fourth embodiment of the present technology. [Figure 56] 1 is a plan view showing a configuration example of a surface-emitting laser to which the present technology can be applied. [Figure 57] Fig. 57A is a cross-sectional view taken along line XX in Fig. 56. Fig. 57B is a cross-sectional view taken along line YY in Fig. 56. [Figure 58] 1A to 1C are diagrams illustrating examples of application of surface-emitting lasers according to embodiments and modifications of the present technology to distance measurement devices. [Figure 59]1 is a block diagram showing an example of a schematic configuration of a vehicle control system; [Figure 60] FIG. 2 is an explanatory diagram showing an example of an installation position of a distance measurement device. DETAILED DESCRIPTION OF THE INVENTION

[0008] Preferred embodiments of the present technology will be described in detail below with reference to the accompanying drawings. Note that in this specification and the drawings, components having substantially the same functional configurations will be denoted by the same reference numerals, and redundant description will be omitted. The embodiments described below illustrate typical embodiments of the present technology, and the scope of the present technology will not be interpreted narrowly thereby. Even when it is described in this specification that a surface-emitting laser according to the present technology has multiple effects, it is sufficient that the surface-emitting laser according to the present technology has at least one effect. The effects described in this specification are merely examples and are not limiting, and other effects may also be provided.

[0009] The explanation will be given in the following order: 1. Introduction 2. Surface-emitting laser according to the first embodiment of the present technology (1) Structure of surface-emitting laser (2) Operation of surface-emitting lasers (3) Manufacturing method of surface-emitting laser (4) Effects of the surface-emitting laser and its manufacturing method 3. Surface-emitting lasers according to modifications 1 to 15 of the first embodiment of the present technology 4. Surface-emitting laser according to the second embodiment of the present technology 5. Surface-emitting laser according to the third embodiment of the present technology 6. Surface-emitting laser according to the fourth embodiment of the present technology (1) Structure of surface-emitting laser (2) Operation of surface-emitting lasers (3) Manufacturing method of surface-emitting laser (4) Effects of the surface-emitting laser and its manufacturing method 7. Surface-emitting lasers according to first to fourth modifications of the fourth embodiment of the present technology 8. Example of a surface-emitting laser configuration to which this technology can be applied 9. Modifications of this technology 10. Application examples to electronic devices 11. Example of applying a surface-emitting laser to a distance measurement device 12. Example of distance measurement device mounted on a moving object

[0010] 1. Introduction In recent years, vertical-cavity surface-emitting lasers (VCSELs) have been used in a wide range of applications, including retinal imaging devices and facial recognition sensors. However, further improvements in efficiency and higher yields during mass production are required. To achieve high-efficiency VCSELs, it is effective to confine light and current in a confinement region. Because the confinement diameter significantly affects VCSEL performance, precise control is required, especially during mass production. For example, VCSELs using AlGaAs-based compound semiconductors typically use an oxidation confinement structure, in which AlAs is converted into AlOx by steam oxidation. However, the rate of steam oxidation varies across the wafer and from batch to batch, resulting in poor yield. Therefore, the development of a surface-emitting laser capable of precisely creating a confinement structure for light and current, thereby improving yield, was anticipated. 2. Surface-emitting laser according to the first embodiment of the present technology (1) Structure of surface-emitting laser 1 is a cross-sectional view showing a configuration of a surface-emitting laser 100 according to a first embodiment of the present technology. For convenience, the following description will refer to the upper side of the cross-sectional view of FIG. 1 and the like as the top and the bottom side as the bottom.

[0011] 1, the surface-emitting laser 100 includes, for example, a first structure S1 including a substrate 101 and a first multilayer reflector 102, a second structure S2 including a second multilayer reflector 106, and a resonator R including an active layer 104 and disposed between the first and second structures S1 and S2. The surface-emitting laser 100 is driven by, for example, a laser driver.

[0012] In the surface-emitting laser 100, for example, a first multilayer reflector 102, a resonator R, and a second multilayer reflector 106 are stacked on a substrate 101 in this order from the substrate 101 side.

[0013] On the substrate 101, for example, a mesa M is formed, including the resonator R (excluding the lower part of the second constituent layer 103b of the first cladding layer 103, which will be described later) and the second multilayer film reflector 106. The mesa M has, for example, a substantially cylindrical shape, but may have other shapes, such as a substantially elliptical cylinder, a polygonal cylinder, a truncated cone, a truncated elliptical cone, or a truncated polygonal pyramid. The height direction of the mesa M substantially coincides with the stacking direction (vertical direction) of the constituent layers of the surface-emitting laser 100.

[0014] For example, the surface-emitting laser 100 emits light from the top of the mesa M. That is, for example, the surface-emitting laser 100 is a surface-emitting surface-emitting laser.

[0015] [First structure] (substrate) The substrate 101 is, for example, a semiconductor substrate (for example, a GaAs substrate) of a first conductivity type (for example, n-type).

[0016] (1st multilayer reflector) The first multilayer reflecting mirror 102 is disposed on a substrate 101, for example. The first multilayer reflector 102 is, for example, a semiconductor multilayer reflector. A multilayer reflector is also called a distributed Bragg reflector. A semiconductor multilayer reflector, which is a type of multilayer reflector (distributed Bragg reflector), has low light absorption, high reflectivity, and electrical conductivity or insulation. More specifically, the first multilayer reflector 102 is, for example, a semiconductor multilayer reflector of a first conductivity type (e.g., n-type) and has a structure in which multiple types (e.g., two types) of semiconductor layers with different refractive indices are alternately stacked with an optical thickness of ¼ wavelength of the oscillation wavelength. Each refractive index layer of the first multilayer reflector 102 is made of an AlGaAs-based compound semiconductor of the first conductivity type (e.g., n-type). The reflectance of the first multilayer reflector 102 is set slightly higher than that of the second multilayer reflector 106.

[0017] [Second structure] (Second multilayer film reflector 106) The second multilayer reflector 106 is disposed on the resonator R, for example. The second multilayer reflector 106 is, for example, a semiconductor multilayer reflector. A multilayer reflector is also called a distributed Bragg reflector. A semiconductor multilayer reflector, which is a type of multilayer reflector (distributed Bragg reflector), has low light absorption, high reflectivity, and electrical conductivity. More specifically, the second multilayer reflector 106 is, for example, a semiconductor multilayer reflector of a second conductivity type (e.g., p-type) and has a structure in which multiple types (e.g., two types) of semiconductor layers with different refractive indices are alternately stacked with an optical thickness of ¼ wavelength of the oscillation wavelength. Each refractive index layer of the second multilayer reflector 106 is made of an AlGaAs-based compound semiconductor of the second conductivity type (e.g., p-type).

[0018] [Resonator] The resonator R includes, as an example, an active layer 104 and first and second cladding layers 103 and 105 disposed at positions sandwiching the active layer 104 therebetween.

[0019] (active layer) The active layer 104 has, for example, a quantum well structure including a barrier layer and a quantum well layer made of an AlGaAs-based compound semiconductor. This quantum well structure may be a single quantum well structure (QW structure) or a multiple quantum well structure (MQW structure).

[0020] (First cladding layer) The first cladding layer 103 is made of, for example, an AlGaAs-based compound semiconductor of a first conductivity type (for example, n-type). Here, a junction J exists within the resonator R. As an example, the junction J exists inside the first cladding layer 103. More specifically, the first cladding layer 103 has first and second constituent layers 103a and 103b joined to each other. As an example, the first constituent layer 103a is located below (on the substrate 101 side of) the first constituent layer 103b.

[0021] Here, in this specification, the bonding portion J includes at least one of a first bonding surface which is the bonding surface of the first component with the second component of the first and second component parts bonded to each other in the surface-emitting laser, a second bonding surface which is the bonding surface of the second component with the first component, and an interface (bonding interface) between the first and second bonding surfaces.

[0022] Below, several examples of joining methods at the joint J will be given. ·Surface activated bonding Bonding is possible both at room temperature and when heated. This method involves treating the top surface of each of the two substrates to be bonded with an ion beam or plasma, activating the atoms on the top surface so that they have dangling bonds, and then bonding the substrates together by pressure bonding. The crystallinity of the top surface of the substrates that has been hit by the ions disappears, and an amorphous layer forms for several nanometers from the bonding interface. This amorphous layer may contain metal elements (for example, by ion gun irradiation). However, the amorphous layer may recrystallize when heat treated. Atomic diffusion bonding This method involves sputtering a few nanometers of metal (for example, Ti) onto the outermost surface of two substrates to be bonded, and then bonding the wafers at room temperature, taking advantage of the fact that the surface energy of the metal and the grain boundary / surface atomic diffusion coefficient of a microcrystalline thin film are orders of magnitude greater than those within the crystal. A sputtered metal film remains at the bonded interface. However, if SiO2 is used as the Ti underlayer, heat treatment after bonding will turn it into TiOx, and the transmittance of the bonded interface will be 100%. In this case, a few nanometers of Ti oxide (amorphous) will be present at the bonded interface. Plasma activated bonding This method involves applying OH groups to the outermost surfaces of two substrates to be bonded using plasma treatment, then bonding the substrates together and removing the OH groups using heat treatment to bond them. Essentially, SiO2 is attached to the outermost surface of each substrate, and the above treatment is then performed on this. During the annealing process to remove the OH groups, some voids are created at the bonding interface. Adhesive bonding This method involves applying an adhesive to at least one surface of the two substrates to be joined, and then bonding the substrates together using intermolecular forces and physical and chemical bonds. The amount of adhesive that was applied remains at the bonding interface.

[0023] (Second cladding layer) The second cladding layer 105 is made of, for example, an AlGaAs-based compound semiconductor of a second conductivity type (for example, p-type).

[0024] At least a part of the thickness direction (length direction, stacking direction, height direction of the mesa M, up-down direction) of the central part of the resonator R is surrounded by, for example, a first confinement portion C1 that confines current and a second confinement portion C2 that confines at least light out of current and light. Here, in a plan view, the central part of the resonator R coincides with the central part of the mesa M, and the peripheral part of the resonator R (the part existing around the central part of the resonator R) coincides with the peripheral part of the mesa M. For example, the first and second confinement sections C1 and C2 surround different portions in the thickness direction of the resonator R. For example, the first confinement section C1 surrounds the entire thickness direction of the central portion of the active layer 104, a part (upper portion) in the thickness direction of the central portion of the first cladding layer 103, and the entire thickness direction of the central portion of the second cladding layer 105. For example, the second confinement section C2 surrounds the other portion (lower portion) in the thickness direction of the central portion of the first cladding layer 103.

[0025] (First containment section) The first confinement portion C1 (the area painted in gray in FIG. 1) functions as a current confinement portion (current confinement portion) that confines (confines) the current injected into the active layer 104, for example.

[0026] For example, the first confining section C1 has a frame shape (circular shape) such as an annular shape in plan view (see FIG. 2). The first confinement section C1 is provided at a position other than the joint J, for example, at a position somewhat away from the joint J, for example. More specifically, the first confinement section C1 is provided in a region of the first component section on one side (e.g., the lower side) of the joint J and the second component section on the other side (e.g., the upper side) that does not include the second bonding surface JS2 of the second component section, which is the bonding surface between the second component section and the first component section. Here, the first component section includes at least the first component layer 103a among the substrate 101, the first multilayer film reflector 102, and the first component layer 103a of the first cladding layer 103. The second component section includes at least the second component layer 103b among the second component layer 103b of the first cladding layer 103, the active layer 104, the second cladding layer 105, and the second multilayer film reflector 106. More specifically, the first confinement section C1 is provided across the peripheral portion of the second cladding layer 105, the peripheral portion of the active layer 104, and the peripheral portion of the upper portion of the second constituent layer 103b of the first cladding layer 103 (the portion on the active layer 104 side). In the first confinement section C1, the peripheral portion of the second cladding layer 105, the peripheral portion of the active layer 104, and the upper portion of the second constituent layer 103b of the first cladding layer 103 are arranged in this order from the upstream side to the downstream side of the current path that runs from the anode electrode 108 (described later) through the active layer 104 to the cathode electrode 109. Therefore, the peripheral portion of the second cladding layer 105 contributes most to the current confinement in the active layer 104, followed by the peripheral portion of the active layer 104, and then the peripheral portion of the first cladding layer 103.

[0027] The first confinement portion C1 has a higher electrical resistance than at least a part of the central portion of the resonator R in the thickness direction (for example, an upper part of the central portion of the second component layer 103b of the first cladding layer 103, a central portion of the active layer 104, and a central portion of the second cladding layer 105, and the same applies below) that is surrounded by the first confinement portion C1. In other words, the first confinement portion C1 is a high-electrical resistance layer that is provided so as to surround at least a part of the central portion of the resonator R in the thickness direction and has a higher electrical resistance than the at least part.

[0028] For example, the first confinement portion C1 may be an ion implantation layer provided so as to surround at least a part of the central portion of the resonator R in the thickness direction, the central portion being surrounded by the first confinement portion C1. For example, the first confinement portion C1 may be a layer (electrical resistance adjusting layer) made of a compound semiconductor having a band gap larger than that of at least a part of the central portion in the thickness direction of the resonator R, which is surrounded by the first confinement portion C1. In other words, the first confinement portion C1 may have a QWI (quantum well disordered) structure.

[0029] For example, the first confinement portion C1 may be a layer (electrical resistance adjusting layer) in which impurities such as Zn are thermally diffused, provided so as to surround at least a part of the central portion of the resonator R in the thickness direction.

[0030] For example, the first confinement section C1 may be a layer provided so as to surround at least a part of the central portion of the resonator R in the thickness direction, into which ions are implanted and into which impurities such as Zn are thermally diffused. For example, the first confinement section C1 may be a QWI (quantum well disordered) structure that surrounds at least a portion of the central part of the resonator R in the thickness direction, and may be a layer into which ions are implanted and / or impurities such as Zn are diffused.

[0031] The thickness of the first confinement section C1 in the stacking direction is, for example, 10 to 3000 nm.

[0032] (Second containment section) The second confinement section C2 confines at least the light generated in the active layer 104 out of the current injected into the active layer 104 and the light generated in the active layer 104. The second confinement section C2 is provided at the joint J or in the vicinity of the joint J, for example. More specifically, the second confinement section C2 is provided at a second bonding surface JS2, which is a bonding surface between the first component section on one side (e.g., the lower side) of the bonding section J and the second component section on the other side (e.g., the upper side) of the bonding section J. Here, the first component section includes at least the first component layer 103a among the substrate 101, the first multilayer film reflector 102, and the first component layer 103a of the first cladding layer 103. The second component section includes at least the second component layer 103b among the second component layer 103b of the first cladding layer 103, the active layer 104, the second cladding layer 105, and the second multilayer film reflector 106. More specifically, the second bonding surface JS2 is provided with a recess 103b1 that surrounds a part of the thickness direction of the central portion of the resonator R (for example, a lower portion of the central portion of the second constituent layer 103b of the first cladding layer 103). The second confinement portion C2 is a layer that exists within the recess 103b1 (more specifically, almost the entire area within the recess 103b1).

[0033] The recess 103b1 and the second confining section C2 are, for example, annular or other frame-shaped (circular) shapes in a plan view (see FIG. 2). For example, the recess 103b1 and the second confining section C2 partially overlap the first confining section C1 in a plan view (see FIG. 2). In a plan view, the center of the first confining section C1 and the center of the second confining section C2 may coincide or deviate. In a plan view, the inner diameter of the first confining section C1 and the inner diameter of the second confining section C2 may be the same or different. For example, the recess 103b1 and the second confining section C2 have an inner diameter of, for example, 0.5 to 300 μm, a depth of, for example, 1 to 500 nm, and a difference between the inner diameter and the outer diameter of, for example, 0.1 to 300 μm.

[0034] As an example, the second confinement section C2 may be a low-refractive index layer having a refractive index lower than that of at least a part of the central portion of the cavity R in the thickness direction (for example, a portion below the central portion of the second constituent layer 103b of the first cladding layer 103) surrounded by the second confinement section C2. In this case, the second confinement section C2 functions as an optical confinement section (optical narrowing section) that confines the light generated in the active layer 104. The low refractive index layer may be made of insulating materials such as air, SiO2, SiN, AlN, etc. In the example of Fig. 1, the low refractive index layer is made of air. The low refractive index layer may have a higher electrical resistance than at least a portion of the central portion of the resonator R in the thickness direction (e.g., a lower portion of the second constituent layer 103b of the first cladding layer 103) surrounded by the recess 103b1 (e.g., it may be an insulating layer or a semi-insulating layer (e.g., a semiconductor layer with an adjusted doping concentration; the same applies below)). In this case, the second confinement portion C2 also functions as a current confinement portion (current confinement portion) that confines (confines) the current injected into the active layer 104. Note that the material of the low refractive index layer does not necessarily have to be an insulating material and may be, for example, a conductive material (e.g., a semiconductor, a metal, etc.).

[0035] As an example, the second confinement section C2 may be a layer (e.g., a semi-insulating layer, an insulating layer, etc.) that has a higher refractive index and a higher electrical resistance than at least a portion of the central part of the resonator R in the thickness direction (e.g., a lower part of the central part of the second constituent layer 103b of the first cladding layer 103) that is surrounded by the second confinement section C2.

[0036] The mesa M is partially covered with an insulating film 107. The insulating film 107 is made of a dielectric material such as SiO2, SiN, or SiON. The insulating film 107 has a thickness of, for example, 10 to 300 nm.

[0037] An anode electrode 108 having, for example, a frame shape in plan view (for example, a ring shape in plan view) is provided on the insulating film 107 on the top of the mesa M (for example, on the top surface of the second multilayer film reflector 106) so as to be in contact with the top of the mesa M. As an example, the anode electrode 108 is disposed on the top of the mesa M so that its center approximately coincides with the center of the mesa M in plan view. The inner diameter side of the anode electrode 108 serves as an emission aperture for the laser light. A thin film that does not absorb or hardly absorbs the emitted light of the surface-emitting laser 100 (light having the oscillation wavelength of the surface-emitting laser 100) is formed as an AR coating on the emission surface (for example, the top surface of the second multilayer film reflector 106), which is the bottom surface of the emission aperture.

[0038] The anode electrode 108 has, for example, a laminated structure in which a Ti layer, a Pt layer, and an Au layer are laminated in this order from the substrate 101 side. The Ti layer has a thickness of, for example, 2 to 100 nm. The Pt layer has a thickness of, for example, 2 to 300 nm. The Au layer has a thickness of, for example, 100 to 500 nm. The anode electrode 108 is electrically connected to, for example, the anode (positive electrode) of a laser driver.

[0039] A laminated wiring is provided on one side surface of the mesa M and on the surrounding insulating film 107. The laminated wiring includes a pad wiring 110 constituting a lower layer and a plated wiring 111 constituting an upper layer, which are stacked on top of each other.

[0040] The pad wiring 110 is disposed so as to cover the periphery of one side of the mesa M, the side surface, and the corners between the side surface and the top surface, and the portion covering the corners is in contact with the anode electrode 108. The end position of the pad wiring 110 on the mesa M is located, for example, about 1 to 200 μm outside the inner diameter position of the anode electrode 108. This makes it possible to suppress absorption of the emitted light (laser light) by the pad wiring 110. For example, the pad wiring 110 has a laminated structure in which a Ti layer, a Pt layer, and an Au layer are laminated in this order from the substrate 101 side. The thickness of the Ti layer is, for example, 2 to 100 nm. The thickness of the Pt layer is, for example, 2 to 300 nm. The thickness of the Au layer is, for example, 100 to 1000 nm. The pad wiring 110 may have other configurations as long as it is electrically connected to, for example, a laser driver when the surface-emitting laser 100 is mounted.

[0041] The plated wiring 111 is made of, for example, an Au layer. The thickness of the Au layer is, for example, 1000 to 5000 nm. The plated wiring 111 may have other configurations as long as they can substantially increase the thickness of the pad wiring 110 and reduce the resistance.

[0042] A contact hole CH is formed in the insulating film 107 on the other side of the mesa M (for example, on the second constituent layer 103b of the first cladding layer 103), and a cathode electrode 109 is provided in the contact hole CH so as to contact the second constituent layer 103b of the first cladding layer 103. For example, the cathode electrode 109 has substantially the same configuration as the anode electrode 108. For example, a pad wiring substantially identical to the pad wiring 110 is laminated on the cathode electrode 109 so as to be in contact with the cathode electrode 109, and a plated wiring substantially identical to the plated wiring 111 is laminated on the pad wiring. The cathode electrode 109 is electrically connected to, for example, the cathode (negative electrode) of a laser driver.

[0043] Here, in the second constituent layer 103b of the first cladding layer 103, a current path exists between the first and second confinement sections C1 and C2, and this current path forms part of the current path that runs from the anode electrode 108 through the active layer 104 to the cathode electrode 109. In other words, no high electrical resistance region or insulating region exists on this current path. This allows current to flow efficiently from the anode electrode 108 to the cathode electrode 109. In addition, this current path prevents current from flowing through the junction interface (the interface between the first constituent layer 103a and the second constituent layer 103b of the first cladding layer 103), thereby preventing a decrease in reliability.

[0044] (2) Operation of surface-emitting lasers In the surface-emitting laser 100, for example, a current supplied from the anode side of a laser driver and flowing in from the anode electrode 108 passes through the second multilayer reflector 106, is confined by the first confinement section C1, and is injected into the active layer 104, causing the active layer 104 to emit light. The current passing through the active layer 104 passes through a current path in the second constituent layer 103b of the first cladding layer 103, reaches the cathode electrode 109, and is discharged from the cathode electrode 109 to, for example, the cathode side of the laser driver. Light generated in the active layer 104 travels back and forth between the first and second multilayer reflectors 102 and 106, is confined by the second confinement section C2 during the round trip, is amplified in the active layer 104, and is emitted as laser light from the top of the mesa M when the oscillation conditions are met.

[0045] (3) Manufacturing method of surface-emitting laser A method for manufacturing the surface-emitting laser 100 will be described below with reference to the flowchart (steps S1 to S11) in Fig. 3. The surface-emitting laser 100 is manufactured by, for example, a semiconductor manufacturing method using semiconductor manufacturing equipment.

[0046] <Step S1> In step S1, a first stacked body production process is performed. In the first stacked body production process, for example, a chemical vapor deposition (CVD) method, such as metal-organic chemical vapor deposition (MOCVD) method, is used to deposit first multilayer reflector 102 and first constituent layer 103a of first cladding layer 103 on substrate 101 (hereinafter also referred to as "first substrate 101") in a growth chamber (for example, by epitaxial growth at a growth temperature of 605°C) to produce first stacked body L1 (see FIG. 4). When performing MOCVD, the source gas for gallium is, for example, trimethylgallium ((CH3)3Ga), the source gas for aluminum is, for example, trimethylaluminum ((CH3)3Al), the source gas for indium is, for example, trimethylindium ((CH3)3In), and the source gas for As is, for example, trimethylarsenic ((CH3)3As). The source gas for silicon is, for example, monosilane (SiH4), and the source gas for carbon is, for example, carbon tetrabromide (CBr4).

[0047] <Step S2> In step S2, a second laminate generation process is carried out. Hereinafter, a second stacked body generating process 1, which is an example of a second stacked body generating process performed to manufacture the surface-emitting laser 100, will be described with reference to the flowchart of FIG.

[0048] In step S2-1-1, as an example, a chemical vapor deposition (CVD) method, such as the metal-organic chemical vapor deposition (MOCVD) method described above, is used to stack the second multilayer reflector 106, the second cladding layer 105, the active layer 104, and a portion of the thickness direction of the second constituent layer 103b of the first cladding layer 103 on the second substrate 112 in a growth chamber (for example, by epitaxial growth at a growth temperature of 605°C) to generate a stack (see Figure 6).

[0049] In step S2-1-2, ion implantation is performed (see FIG. 7). Specifically, a resist pattern RP1 is formed on a portion of the second constituent layer 103b of the second cladding layer 103 in the laminate shown in FIG. 6 in the thickness direction, the resist pattern RP1 having openings only at locations where the recesses 103b1 will be formed, and ion implantation is performed using the resist pattern RP1 as a mask. Here, the ion implantation region (region where ions exist) formed by ion implantation extends, for example, over at least a portion of the second constituent layer 103b of the first cladding layer 103 in the thickness direction, the entire thickness direction of the active layer 104, and the entire thickness direction of the second cladding layer 105. By performing step S2-1-2, the first confinement section C1 is formed.

[0050] In step S2-1-3, the other part (remaining part) of the second constituent layer 103b of the first cladding layer 103 is laminated on a part of the second constituent layer 103b (see FIG. 8). Specifically, the second constituent layer 103b is epitaxially grown (regrown) again by, for example, the above-mentioned MOCVD method at, for example, a growth temperature of 605°C.

[0051] In step S2-1-4, a frame-shaped recess 103b1 (circumferential recess) is formed in the second constituent layer 103b of the first cladding layer 103 (see FIG. 9). Specifically, a resist pattern RP2 having a frame-shaped opening is formed on the second constituent layer 103b to form the recess 103b1. Next, using the resist pattern RP2 as a mask, at least a portion of the regrown layer, which is the other portion of the second constituent layer 103b, is removed by, for example, wet etching to form the frame-shaped recess 103b1. Thereafter, the resist pattern RP2 is removed. At this time, an air layer remains inside the recess 103b1. Thereafter, the recess 103b1 is filled with the semi-insulating or insulating material described above, as necessary. As a result, a second confinement portion C2 is formed, and a stack L2 is obtained.

[0052] <Step S3> In step S3, the first and second laminates L1 and L2 are bonded together (see FIGS. 10 and 11). Specifically, for example, the first constituent layer 103a of the first clad layer 103 of the first laminate L1 is bonded to the second constituent layer 103b of the first clad layer 103 of the second laminate L2 using any of the bonding methods (1) to (4) described above.

[0053] <Step S4> In step S4, the second substrate 112 is removed (see FIG. 12). Specifically, the second substrate 112 is ground to thin it, and then the thinned second substrate 112 is removed by wet etching. As a result, the surface of the second multilayer film reflector 106 is exposed.

[0054] <Step S5> In step S5, a mesa M is formed (see FIG. 13). Specifically, as an example, the second multilayer reflector 106, the second cladding layer 105, the active layer 104, and an upper portion of the second component layer 103b of the first cladding layer 103 are etched to form the mesa M. More specifically, a resist pattern for forming the mesa M is generated on the second multilayer reflector 106 by photolithography. Next, using this resist pattern as a mask, the stack obtained by performing step S4 is etched, for example, by RIE (reactive ion etching), until the second constituent layer 103b of the first cladding layer 103 is exposed (for example, until the side surface of the active layer 104 is completely exposed), thereby forming the mesa M whose outer diameter is 1 to 40 μm longer than the outer diameter of the recess 103b1. This etching is carried out until the bottom of the etched surface is located within the second constituent layer 103b of the first cladding layer 103. Thereafter, the resist pattern is removed.

[0055] <Step S6> In step S6, the anode electrode 108 is formed (see FIG. 14). The anode electrode 108 can be formed by, for example, a lift-off method. In step S6, the frame-shaped (for example, annular) anode electrode 108 is formed on the second multilayer film reflecting mirror 106 by, for example, vacuum deposition or sputtering. More specifically, the anode electrode 108 is formed so that its inner diameter is approximately 1 to 200 μm longer than the inner diameter of the recess 103b1 and its outer diameter is 1 to 200 μm shorter than the diameter of the mesa M.

[0056] <Step S7> The insulating film 107 is formed (see FIG. 15). Specifically, the insulating film 107 is formed on the mesa M and its surrounding area by, for example, CVD, vacuum deposition, sputtering, or the like.

[0057] <Step S8> In step S8, a portion of the insulating film 107 is removed (see FIG. 16). Specifically, the insulating film 107 on the anode electrode 108 is removed by, for example, RIE using a solution containing hydrogen fluoride, and a portion of the insulating film 107 covering the periphery of the mesa M (for example, the second constituent layer 103b of the second cladding layer 103) is removed by etching. As a result, the anode electrode 108 is exposed, and a contact hole CH is formed on the second constituent layer 103b of the second cladding layer 103, and the second constituent layer 103b of the first cladding layer 103 is exposed through the contact hole CH.

[0058] <Step S9> In step S9, the cathode electrode 109 is formed (see FIG. 17). Specifically, the cathode electrode 109 is formed in the contact hole CH so as to be in contact with the second component layer 103b of the first cladding layer 103.

[0059] <Step S10> In step S10, the pad wiring 110 is formed (see FIG. 18). The pad wiring 110 can be formed by, for example, a lift-off method.

[0060] <Step S11> In step S11, plated wiring 111 is formed (see FIG. 19). Specifically, the plated wiring 111 is formed by, for example, a plating method so as to straddle the pad wiring 110 formed on the side surface of the mesa M and the pad wiring 110 formed in the peripheral region of the mesa M.

[0061] (4) Effects of the surface-emitting laser and its manufacturing method The surface-emitting laser 100 according to the first embodiment of the present technology comprises a first structure S1 including a first multilayer reflector 102, a second structure S2 including a second multilayer reflector 106, and a resonator R including an active layer 104 and arranged between the first and second structures S1 and S2, wherein a junction J is present in at least one of the first structure S1, the second structure S2, the resonator R, between the resonator R and the first structure S1, and between the resonator R and the second structure S2 (for example, in the resonator R), and a first confinement C1 that confines current is provided in at least one of the first and second components (for example, the second component) joined by the junction J, and a second confinement C2 that confines at least light of the current and light is provided in at least one of the first and second components (for example, the second component). In this case, the first confinement section C1 can be generated with good controllability in at least one of the first and second component parts (e.g., the second component part), and the second confinement section C2 can be generated with good controllability in at least one of the first and second component parts (e.g., the second component part). As a result, the surface-emitting laser 100 can provide a surface-emitting laser that can be manufactured with a high yield and has a configuration that confines current and light.

[0062] At least a part (for example, the entire area) of the central part of the active layer 104 in the thickness direction is surrounded by the first confinement portion C1 that confines the current. This makes it possible to more effectively confine the current to the active layer 104.

[0063] The resonator R further includes first and second cladding layers 103 and 105 disposed on either side of the active layer 104, and the entire thickness of the central portion of the second cladding layer 105 located upstream of the active layer 104 in the current path is surrounded by a first confinement portion C1 that confines the current. This allows for more effective current confinement in the active layer 104.

[0064] The resonator R further includes first and second cladding layers 103 and 105 disposed at positions sandwiching the active layer 104, and a part of the central part of the first cladding layer 103 in the thickness direction is surrounded by a second confinement portion C2 that confines at least light. This allows for effective light confinement to at least the active layer 104 in the region of the resonator R adjacent to the active layer 104.

[0065] The resonator R further includes first and second cladding layers 103 and 105 disposed at positions sandwiching the active layer 104. The entire thickness of the central portion of the second cladding layer 105 is surrounded by a first confinement portion C1 that confines current, and a portion of the thickness of the central portion of the first cladding layer 103 is surrounded by a second confinement portion C2 that confines at least light. This allows for effective confinement of both current and light in the active layer 104.

[0066] A junction J exists within the resonator R. This allows a confinement section to be provided at a desired position within the resonator R. For example, the first confinement section C1 can be provided at a position other than the junction J (at a position somewhat distant from the junction J). For example, the second confinement section C2 can be provided at the junction J.

[0067] The resonator R further includes first and second cladding layers 103 and 105 disposed at positions sandwiching the active layer 104, and a junction J exists inside the first cladding layer 103. This makes it possible to suppress damage to the active layer 104 compared to the case where a junction exists inside the active layer 104, between the active layer 104 and the first cladding layer 103, or between the active layer 104 and the second cladding layer 105.

[0068] The first cladding layer 103 has first and second constituent layers 103a and 103b bonded to each other, and the second confinement section C2 is provided at a second bonding surface JS2, which is the bonding surface of the second constituent layer 103b to the first constituent layer 103a, of the first cladding layer 103. In this case, light can be confined to at least the active layer 104 at a position closer to the active layer 104 than if the second confinement section C2 were provided at a first bonding surface JS1, which is the bonding surface of the first cladding layer 103 to the second constituent layer 103b.

[0069] The second confinement section C2 is a layer present in a recess 103b1 provided on the second bonding surface JS2 of the first cladding layer 103 so as to surround a portion of the central portion of the resonator R in the thickness direction. This layer is preferably a low-refractive index layer having a lower refractive index than the portion of the central portion in the thickness direction. This allows the second confinement section C2 to function effectively as at least an optical confinement section. The recess 103b1 is formed, for example, by etching, which allows for good control of the width and depth. This allows for good control of the second confinement section C2, ultimately improving yield. Furthermore, by appropriately selecting the material used for the low-refractive index layer in the recess 103b1, the degree of optical confinement can be adjusted, enabling mode control.

[0070] Furthermore, the low refractive index layer preferably has semi-insulating or insulating properties, which allows the second confinement portion C2 to function as a current confinement portion as well.

[0071] The first confinement portion C1 has a higher electrical resistance than a part of the thickness direction of the central portion of the resonator R that is surrounded by the first confinement portion C1. This allows the first confinement portion C1 to function effectively as a current confinement portion.

[0072] The first confinement portion C1 may be an ion-implanted layer provided so as to surround a part of the thickness direction of the central portion of the resonator R. This allows the first confinement portion C1 as a current confinement portion to be generated with good controllability, and can improve yield.

[0073] The first confinement portion C1 may be made of a compound semiconductor having a band gap larger than that of a part of the thickness direction of the central portion of the resonator R that is surrounded by the first confinement portion C1. This allows the first confinement portion C1 as a current confinement portion to be generated with good controllability, and can improve yield.

[0074] The first confinement portion C1 is present inside the resonator R where the junction J is present. This allows ion implantation, vacancy diffusion, thermal diffusion, and the like for generating the first confinement portion C1 to be performed on a part of the resonator R (for example, the second constituent layer 103b of the first cladding layer 103), making it possible to reduce the implantation depth and diffusion depth, and ultimately to generate the first confinement portion C1 with good width controllability.

[0075] On the other hand, in conventional VCSELs, when the confinement section is made of a metal layer, as in the example of JP 2013-229443 A, light leaking from the confinement section is absorbed by the metal layer, resulting in an increase in threshold current and heat generation, which leads to a deterioration in the performance of the VCSEL.

[0076] The method for manufacturing the surface-emitting laser 100 includes the steps of: laminating, on a first substrate 101, a first structure S1 including a first multilayer reflector 102 and a first portion of a resonator R (for example, a first constituent layer 103a of a first cladding layer 103) in this order to form a first laminate L1; producing a second laminate L2; and bonding the first and second laminates L1 and L2 together. In the step of producing the second laminate L2, a second structure S2 including a second multilayer reflector 106 and a second portion of a resonator R (for example, a first constituent layer 103a of a first cladding layer 103) are laminated on a second substrate 112. In the bonding step, the third part of the resonator R (e.g., the remaining part of the second constituent layer 103b of the first cladding layer 103) is laminated on the second part of the resonator R in the second laminate L2 and the first part of the resonator R in the first laminate L1. According to the method for manufacturing the surface-emitting laser 100, a surface-emitting laser having a structure that confines current and light can be manufactured with a good yield. Furthermore, according to the manufacturing method of the surface-emitting laser 100, current and / or light are confined in the active layer 104 and / or in the vicinity of the active layer 104, so that a surface-emitting laser 100 can be manufactured that can effectively confine current and / or light to the active layer.

[0077] 3. Surface-emitting lasers according to modifications 1 to 15 of the first embodiment of the present technology Surface-emitting lasers according to modifications 1 to 15 of the first embodiment of the present technology will be described below.

[0078] (Variation 1) As shown in FIG. 20, the surface-emitting laser 100-1 of the first modification has a configuration similar to that of the surface-emitting laser 100 of the first embodiment, except that the second confinement section C2 is made of an insulating material (e.g., SiO2, SiN, AlN, etc.) embedded in the recess 103b1.

[0079] (Variation 2) 21, in the surface-emitting laser 100-2 of the second modification, the recess 103b1 and the second confinement section C2 may each have a curved shape that is convex toward the bonding interface (a curved shape that approaches the bonding interface as it approaches the center). That is, the cross section of the recess 103b1 may have a shape (e.g., a curved shape) that becomes shallower as it approaches a part in the thickness direction of the central part of the resonator R surrounded by the recess 103b1 (e.g., a part below the central part of the second constituent layer 103b of the first cladding layer 103). This makes it possible to suppress light scattering loss and improve the mode shape, thereby suppressing deterioration of characteristics, even if the inner diameter of the recess 103b1 is small.

[0080] (Variation 3) 22, in the surface-emitting laser 100-3 of the third modification, the recess 103b1 and the second confinement section C2 may each have a tapered shape that approaches the junction interface as it approaches the center. That is, the cross section of the recess 103b1 may have a shape (e.g., a tapered shape) that becomes shallower as it approaches a part in the thickness direction of the central part of the resonator R surrounded by the recess 103b1 (e.g., a part below the central part of the second component layer 103b of the first cladding layer 103). This makes it possible to suppress light scattering loss and improve the mode shape, thereby suppressing deterioration of characteristics, even if the inner diameter of the recess 103b1 is small.

[0081] (Variation 4) 23 , the surface-emitting laser 100-4 of the fourth modification has a configuration similar to that of the surface-emitting laser 100 of the first embodiment, except that the first confinement section C1 also surrounds the lower part of the central part of the second multilayer film reflector 106. The surface-emitting laser 100-4 can be manufactured by a manufacturing method similar to that of the surface-emitting laser 100. According to the surface-emitting laser 100-4, it is necessary to perform deeper ion implantation, vacancy diffusion, impurity diffusion, etc. when generating the first confinement portion C1. However, since the first confinement portion C1 is extended toward the anode electrode 108, current confinement to the active layer 104 can be performed earlier, thereby further increasing the efficiency of current injection into the active layer 104.

[0082] (Variation 5) 24, the surface-emitting laser 100-5 of the fifth modification has a similar configuration to the surface-emitting laser 100 of the first embodiment, except that the first confinement section C1 surrounds only the lower central portion of the active layer 104 and the upper central portion of the first cladding layer 103. The surface-emitting laser 100-5 can be manufactured by the same manufacturing method as the surface-emitting laser 100, except that the depth of ion implantation, impurity diffusion, vacancy diffusion, etc. into the second constituent layer 103b of the first cladding layer 103 is shallow. Although the surface-emitting laser 100-5 has a poorer effect of confining current to the active layer 104 than the surface-emitting laser 100, it can provide better width controllability and a higher yield because it only requires very shallow ion implantation, vacancy diffusion, impurity diffusion, etc. to generate the first confinement portion C1.

[0083] (Variation 6) As shown in FIG. 25, the surface-emitting laser 100-6 of the sixth modification has a configuration similar to that of the surface-emitting laser 100 of the first embodiment, except that the second confinement section C2 is provided at the junction surface of the first component layer 103a of the first cladding layer 103 with the second component layer 103b. That is, in the surface-emitting laser 100-6, the second confinement section C2 is provided at a first bonding surface, which is a bonding surface between the first component section and the second component section, of the first component section on one side (e.g., the lower side) of the bonding section J and the second component section on the other side (e.g., the upper side). Here, the first component section includes at least the first component layer 103a out of the substrate 101, the first multilayer film reflector 102, and the first component layer 103a of the first cladding layer 103. The second component section includes at least the second component layer 103b out of the second component layer 103b of the first cladding layer 103, the active layer 104, the second cladding layer 105, and the second multilayer film reflector 106. The surface-emitting laser 100-6 can be manufactured by the same manufacturing method as the surface-emitting laser 100, except that a frame-shaped recess 103a1 is formed in the first component layer 103a.

[0084] (Variation 7) As shown in FIG. 26, the surface-emitting laser 100-7 of the seventh modification has a configuration similar to that of the surface-emitting laser 100 of the first embodiment, except that the second confinement section C2 is also provided at the junction surface of the first component layer 103a of the first cladding layer 103 with the second component layer 103b. That is, in the surface-emitting laser 100-7, the second confinement section C2 is provided at a first bonding surface, which is a bonding surface between the first component section and the second component section, and a second bonding surface, which is a bonding surface between the second component section and the first component section, of the first component section on one side (e.g., the lower side) of the bonding section J and the second component section on the other side (e.g., the upper side). Here, the first component section includes at least the first component layer 103a among the substrate 101, the first multilayer film reflector 102, and the first component layer 103a of the first cladding layer 103. The second component section includes at least the second component layer 103b among the second component layer 103b of the first cladding layer 103, the active layer 104, the second cladding layer 105, and the second multilayer film reflector 106. The surface-emitting laser 100-7 can be manufactured by the same manufacturing method as the surface-emitting laser 100, except that the recess 103a1 is formed in the first component layer 103a. In the surface-emitting laser 100-6, the thickness of the second confinement section C2 is substantially increased, so that the effect of confining light to the active layer 104 can be further enhanced.

[0085] (Variation 8) As shown in FIG. 27, the surface-emitting laser 100-8 of variant 8 has a configuration similar to that of the surface-emitting laser 100, except that the junction J is located between the second multilayer reflector 106 and the resonator R (e.g., the second cladding layer 105), and the second confinement section C2 is provided on the junction surface of the second cladding layer 105 with the second multilayer reflector 106. That is, in the surface-emitting laser 100-8, the second confinement section C2 is provided at a first bonding surface, which is a bonding surface between the first component section and the second component section, of the first component section on one side (e.g., the lower side) of the bonding section J and the second component section on the other side (e.g., the upper side). Here, the first component section includes at least the second cladding layer 105 out of the substrate 101, the first multilayer film reflector 102, the first cladding layer 103, the active layer 104, and the second cladding layer 105. The second component section includes the second multilayer film reflector 106.

[0086] An example of a method for manufacturing the surface-emitting laser 100-8 will be briefly described. Step 1: A first multilayer reflector 102, a first cladding layer 103, an active layer 104, and a second cladding layer 105 are laminated in this order on a substrate 101 (first substrate 101) to produce a first laminate. Step 2: A frame-shaped recess 105a is formed in the second cladding layer 105 of the first laminate by etching, and a semi-insulating or insulating material is filled in the recess 105a as needed to produce a second confinement portion C2. Step 3: The first confinement portion C1 is generated by forming a frame-shaped current confinement portion by performing ion implantation, vacancy diffusion, impurity diffusion, etc. on the second cladding layer 105 of the first laminate. The depth of the ion implantation, vacancy diffusion, impurity diffusion, etc. at this time is set to, for example, up to the top of the first cladding layer 103. Step 4: The second multilayer reflector 106 is laminated on the second substrate 112 to form a second laminate. Step 5: The second cladding layer 105 of the first laminate and the second multilayer reflector 106 of the second laminate are bonded together by, for example, any of the bonding methods (1) to (4) above. Thereafter, steps similar to steps S4 to S11 in FIG. 3 are carried out.

[0087] According to the surface-emitting laser 100-8, the second confinement section C2 is provided on the anode electrode 108 side (upstream side of the current path) with respect to the active layer 104, so that, for example, the second confinement section C2 can more effectively confine current to the active layer 104. Furthermore, according to the surface-emitting laser 100-8, a current path can be ensured in the first cladding layer 103 by adjusting the depth of ion implantation, vacancy diffusion, impurity diffusion, etc. into the second cladding layer 105 during manufacturing, so that there is no need to grow the second cladding layer 105 in two steps, and there is no need to grow the first cladding layer 103 in two steps.

[0088] (Variation 9) As shown in FIG. 28, the surface-emitting laser 100-9 of the ninth modification has the same configuration as the surface-emitting laser 100-8 of the eighth modification, except that the second confinement section C2 is provided at the junction surface between the second multilayer film reflector 106 and the resonator R. That is, in the surface-emitting laser 100-9, the second confinement section C2 is provided at a second bonding surface, which is a bonding surface between the first component section on one side (e.g., the lower side) of the bonding section J and the second component section on the other side (e.g., the upper side) of the bonding section J. Here, the first component section includes at least the second cladding layer 105 out of the substrate 101, the first multilayer film reflector 102, the first cladding layer 103, the active layer 104, and the second cladding layer 105. The second component section includes a second multilayer film reflector 106.

[0089] An example of a method for manufacturing the surface-emitting laser 100-9 will be briefly described. Step 1: A first multilayer reflector 102, a first cladding layer 103, an active layer 104, and a second cladding layer 105 are laminated in this order on a substrate 101 (first substrate 101) to produce a first laminate. Step 2: Ion implantation, vacancy diffusion, impurity diffusion, etc. are performed on the second cladding layer 105 of the first laminate to form a frame-shaped current confinement portion, thereby generating the first confinement portion C1. The depth of the ion implantation, vacancy diffusion, impurity diffusion, etc. at this time is set to, for example, up to the top of the first cladding layer 103. Step 3: A second stack is produced by stacking the second multilayer reflector 106 on the second substrate 112. Step 4: A frame-shaped recess 106a is formed in the second multilayer reflector 106 of the second stack by etching, and a semi-insulating or insulating material is embedded in the recess 106a as necessary to produce a second confinement section C2. Step 5: The second cladding layer 105 of the first laminate and the second multilayer reflector 106 of the second laminate are bonded together by, for example, any of the bonding methods (1) to (4) above. Thereafter, steps similar to steps S4 to S11 in FIG. 3 are carried out.

[0090] According to the surface-emitting laser 100-9, it is possible to obtain the same effects as the surface-emitting laser 100-8 of the eighth modification, and in addition, since the second confinement section C2 is arranged further upstream in the current path, it is possible to obtain the current confinement effect from an earlier stage, thereby improving the efficiency of current injection into the active layer 104.

[0091] (Variation 10) As shown in FIG. 29, the surface-emitting laser 100-10 of the tenth modification has a configuration similar to that of the surface-emitting laser 100 of the first embodiment, except that a junction J exists between the second multilayer reflector 106 and the resonator R (e.g., the second cladding layer 105), a junction J exists between the first multilayer reflector 102 and the resonator R (e.g., the first cladding layer 103), a second confinement section C2 is provided at the joint surface of the second cladding layer 105 with the second multilayer reflector 106, and a second confinement section C2 is provided at the joint surface of the first multilayer reflector 102 with the first cladding layer 103. That is, in the surface-emitting laser 100-10, one (lower) second confinement section C2 is provided at a first bonding surface, which is a bonding surface between the first component section and the second component section, of the first component section on one side (e.g., the lower side) of one (lower) bonding section J and the second component section on the other side (e.g., the upper side). Here, the first component section includes at least the first multilayer film reflector 102 out of the substrate 101 and the first multilayer film reflector 102. The second component section includes at least the first cladding layer 103 out of the first cladding layer 103, the active layer 104, the second cladding layer 105, and the second multilayer film reflector 106. In the surface-emitting laser 100-10, the other (upper) second confinement section C2 is provided at a first bonding surface, which is a bonding surface between the first component section and the second component section, of the first component section on one side (e.g., the lower side) of the other (upper) bonding section J and the second component section on the other side (e.g., the upper side). Here, the first component section includes at least the second cladding layer 105 out of the substrate 101, first multilayer film reflector 102, first cladding layer 103, active layer 104, and second cladding layer 105. The second component section includes a second multilayer film reflector 106.

[0092] An example of a method for manufacturing the surface-emitting laser 100-10 will now be briefly described. Step 1: A first multilayer reflector 102 is laminated on a substrate 101 (first substrate 101) to produce a first laminate. Step 2: A frame-shaped recess 102a is formed in the first multilayer reflector 102 of the first stack by etching, and a semi-insulating or insulating material is embedded in the recess 102a as needed to create a second confinement portion C2. Step 3: The second multilayer reflector 106 is laminated on the second substrate 112 to form a second laminate. Step 4: A third laminate is produced by laminating the first cladding layer 103, the active layer 104, and the second cladding layer 105 on the third substrate in this order from the third substrate side. Step 5: A frame-shaped recess 105a is formed in the second cladding layer 105 of the third laminate by etching, and a semi-insulating or insulating material is filled in the recess 105a as needed to form a second confinement portion C2. Step 6: Ion implantation, vacancy diffusion, impurity diffusion, etc. are performed on the second cladding layer 105 of the third stack to form a frame-shaped current confinement portion, thereby generating the first confinement portion C1. The implantation depth and diffusion depth at this time are set to, for example, up to the top of the first cladding layer 103. Step 7: The second multilayer film reflector 106 of the second laminate and the second cladding layer 105 of the third laminate are bonded together by any of the bonding methods (1) to (4) above, and the third substrate of the third laminate is thinned and removed by wet etching, exposing the first cladding layer 103 of the third laminate. Step 8: The first cladding layer 103 of the third laminate and the first multilayer reflector 102 of the first laminate are bonded together by, for example, any of the bonding methods (1) to (4) above. Thereafter, steps similar to steps S4 to S11 in FIG. 3 are carried out.

[0093] The surface-emitting laser 100-10 can achieve the same effect as the surface-emitting laser 100-8 of variant 8, and since the second confinement section C2 is also provided in the first multilayer film reflector 102, a stronger light confinement effect in the active layer 104 can be achieved.

[0094] (Variation 11) As shown in FIG. 30, the surface-emitting laser 100-11 of the eleventh variant has a configuration similar to that of the surface-emitting laser 100 of the first embodiment, except that a junction J exists between the second multilayer reflector 106 and the resonator R (second cladding layer 105), a junction J exists between the first multilayer reflector 102 and the first cladding layer 103, a first confinement section C1 is provided in the second multilayer reflector 106, and a second confinement section C2 is provided at the junction surface of the first cladding layer 103 with the first multilayer reflector 102. That is, in the surface-emitting laser 100-11, the second confinement section C2 is provided at a second bonding surface, which is a bonding surface between the first component section and the second component section on one side (e.g., the lower side) of one (lower) bonding section J and the second component section on the other side (e.g., the upper side). Here, the first component section includes at least the first multilayer film reflector 102 out of the substrate 101 and the first multilayer film reflector 102. The second component section includes at least the first cladding layer 103 out of the first cladding layer 103, the active layer 104, the second cladding layer 105, and the second multilayer film reflector 106. In the surface-emitting laser 100-11, the first confinement section C1 is provided in a region including a second bonding surface, which is a bonding surface of the second component with the first component, among the first component on one side (e.g., the lower side) of the other (upper) bonding section J and the second component on the other side (e.g., the upper side). Here, the first component includes at least the second cladding layer 105 among the substrate 101, the first multilayer film reflector 102, the first cladding layer 103, the active layer 103, and the second cladding layer 105. The second component includes a second multilayer film reflector 106.

[0095] An example of a method for manufacturing the surface-emitting laser 100-11 will now be briefly described. Step 1: A first multilayer reflector 102 is laminated on a substrate 101 (first substrate 101) to produce a first laminate. Step 2: The second multilayer reflector 106 is laminated on the second substrate 112 to form a second laminate. Step 3: A frame-shaped current confinement portion is formed by performing ion implantation, vacancy diffusion, impurity diffusion, etc. on the second multilayer reflector 106 of the second stack, thereby generating the first confinement portion C1. Step 4: The second cladding layer 105, the active layer 104, and the first cladding layer 103 are laminated on the third substrate in this order from the third substrate side to form a third laminate. Step 5: A frame-shaped recess 103c is formed in the first cladding layer 103 of the third laminate by etching, and a semi-insulating or insulating material is filled in the recess 103c as needed to form a second confinement portion C2. Step 6: The first multilayer reflector 102 of the first laminate and the first cladding layer 103 of the third laminate are bonded together by any of the bonding methods (1) to (4) above, and the third substrate of the third laminate is thinned and removed by wet etching, exposing the second cladding layer 105 of the third laminate. Step 7: The second cladding layer 105 of the third laminate and the second multilayer reflector 106 of the second laminate are bonded together by, for example, any of the bonding methods (1) to (4) above. Thereafter, steps similar to steps S4 to S11 in FIG. 3 are carried out.

[0096] According to the surface-emitting laser 11, it is possible to obtain the same effects as the surface-emitting laser 100 of the first embodiment, and since the first confinement section C1 is provided in the second multilayer film reflector 106 (further upstream of the current path), the current confinement effect in the active layer 104 can be obtained earlier.

[0097] (Variation 12) 31, the surface-emitting laser 100-12 of Modification 12 has a configuration similar to that of the surface-emitting laser 100-8 of Modification 8, except that the first confinement portion C1 is not provided. The surface-emitting laser 100-12 can be manufactured by the same manufacturing method as the surface-emitting laser 100-8, except that the frame-shaped high electrical resistance layer (first confinement portion C1) is not formed in the second cladding layer 105 of the first laminate. That is, in the surface-emitting laser 100-12, the second confinement section C2 is provided at a first bonding surface, which is a bonding surface between the first component section and the second component section, of the first component section on one side (e.g., the lower side) of the bonding section J and the second component section on the other side (e.g., the upper side). Here, the first component section includes at least the second cladding layer 105 out of the substrate 101, the first multilayer film reflector 102, the first cladding layer 103, the active layer 104, and the second cladding layer 105. The second component section includes the second multilayer film reflector 106. According to the surface-emitting laser 12, for example, by providing the second confinement section C2 with a current confinement function in addition to an optical confinement function, it is possible to obtain a current confinement effect in addition to an optical confinement effect in the active layer 104 even without the first confinement section C1. Furthermore, according to the surface-emitting laser 100-12, since the first confinement section C1 is not provided, the number of manufacturing steps can be reduced and productivity can be improved.

[0098] (Variation 13) 32, the surface-emitting laser 100-13 of the thirteenth modification has a configuration similar to that of the surface-emitting laser 100 of the first embodiment, except that the upper part of the second cladding layer 105 is not surrounded by the first confinement section C1. The surface-emitting laser 100-13 can be manufactured by the same manufacturing method as that of the surface-emitting laser 100, except that the depth of ion implantation, vacancy diffusion, impurity diffusion, etc. into the second constituent layer 103b of the first cladding layer 103 is shallow. Although the surface-emitting laser 100-13 has a poorer effect of confining current to the active layer 104 than the surface-emitting laser 100, it can provide better width controllability and a higher yield because it can generate the first confinement portion C1 by performing, for example, ion implantation, vacancy diffusion, impurity diffusion, etc., more shallowly.

[0099] (Variation 14) 33, the surface-emitting laser 100-14 of Modification 14 has a configuration similar to that of the surface-emitting laser 100 of the first embodiment, except that the second cladding layer 105 is not surrounded by the first confinement section C1. The surface-emitting laser 100-14 can be manufactured by the same manufacturing method as that of the surface-emitting laser 100 of Modification 13, except that the depths of ion implantation, vacancy diffusion, and impurity diffusion into the second constituent layer 103b of the first cladding layer 103 are shallow. Although the surface-emitting laser 100-14 has a poorer effect of confining current to the active layer 104 than the surface-emitting laser 100, it can provide better width controllability and a higher yield because it can generate the first confinement portion C1 by performing, for example, ion implantation, vacancy diffusion, impurity diffusion, etc., more shallowly.

[0100] (Variation 15) 34, the surface-emitting laser 100-15 of the fifteenth modification has a configuration similar to that of the surface-emitting laser 100 of the first embodiment, except that the second cladding layer 105 and the active layer 104 are not surrounded by the first confinement section C1. The surface-emitting laser 100-15 can be manufactured by the same manufacturing method as that of the surface-emitting laser 100-14 of the fourteenth modification, except that the depths of ion implantation, vacancy diffusion, impurity diffusion, etc., in the second constituent layer 103b of the first cladding layer 103 are shallow. Although the surface-emitting laser 100-15 has a poorer effect of confining current to the active layer 104 than the surface-emitting laser 100, it can generate the first confinement portion C1 by performing, for example, ion implantation, vacancy diffusion, impurity diffusion, etc., very shallowly, and therefore has much better width controllability and can significantly improve the yield.

[0101] 4. Surface-emitting laser according to the second embodiment of the present technology A surface-emitting laser 200 according to a second embodiment of the present technology will be described below. As shown in Fig. 35 , the surface-emitting laser 200 according to the second embodiment has a configuration generally similar to that of the surface-emitting laser 100 according to the first embodiment, except that it is a back-side emission type. That is, in the surface-emitting laser 200, the reflectance of the second multilayer reflector 106 is set to be slightly higher than the reflectance of the first multilayer reflector 102, and a substrate that is transparent at least to the oscillation wavelength is used for the substrate 101. Furthermore, in the surface-emitting laser 200, as an example, the first multilayer reflector 102 is n-type, and the second multilayer reflector 106 is p-type. In the surface-emitting laser 200, a cathode electrode 109 is provided around the periphery of the mesa, and a flat anode electrode 108 is provided on the top of the mesa.

[0102] In the surface-emitting laser 200, a current supplied from, for example, a laser driver and flowing in from the anode electrode 108 passes through the second cladding layer 105, is confined by the first confinement section C1, and is injected into the active layer 104, causing the active layer 104 to emit light. The light generated in the active layer 104 travels back and forth between the first and second multilayer film reflectors 102 and 106, is confined by the second confinement section C2 during the round trip, is amplified in the active layer 104, and is emitted to the outside from the back surface of the substrate 101 when oscillation conditions are met. The current injected into the active layer 104 passes through the second constituent layer 103b of the first cladding layer 103, reaches the cathode electrode 109, and flows out from the cathode electrode 109 to, for example, the laser driver. The surface-emitting laser 200 has the same effects as the surface-emitting laser 100 of the first embodiment.

[0103] 5. Surface-emitting laser according to the third embodiment of the present technology Hereinafter, a surface-emitting laser 300 according to a third embodiment of the present technology will be described. 36, the surface-emitting laser 300 of the third embodiment has a similar configuration to the surface-emitting laser 200 of the second embodiment, except that it has a double intra-cavity structure. That is, in the surface-emitting laser 300, an anode electrode 108 is provided along the mesa so as to be in contact with the second cladding layer 105 of the resonator, and a cathode electrode 109 is provided so as to be in contact with the first cladding layer 103 of the resonator. The surface-emitting laser 300 operates in the same manner as the surface-emitting laser 200. The surface-emitting laser 300 provides the same effects as the surface-emitting laser 200.

[0104] 6. Surface-emitting laser according to the fourth embodiment of the present technology (1) Structure of surface-emitting laser A surface-emitting laser 400 according to a fourth embodiment of the present technology will be described below. 37, the surface-emitting laser 400 of the fourth embodiment has a similar configuration to the surface-emitting laser 200 of the second embodiment, except for having a back electrode structure. More specifically, in the surface-emitting laser 400, a cathode electrode 109 is provided on the back surface (the surface opposite to the first multilayer film reflector 102 side) of the conductive substrate 101, and a flat anode electrode 108 is provided on the mesa top (for example, the surface opposite to the second cladding layer 105 side of the second multilayer film reflector 106). In the surface-emitting laser 400, the first confinement section C1 is provided in a region including a second bonding surface, which is a bonding surface of the second component section with the first component section, among the first component section on one side (e.g., the upper side) of the bonding section J and the second component section on the other side (e.g., the lower side). Here, the first component section includes at least the first component layer 103a among the substrate 101, the first multilayer film reflector 102, and the first component layer 103a of the first cladding layer 103. The second component section includes at least the second component layer 103b among the second component layer 103b of the first cladding layer 103, the active layer 104, the second cladding layer 105, and the second multilayer film reflector 106. More specifically, in the surface-emitting laser 400, the first confinement portion C1 surrounds the entire thickness direction of the central portion of the second constituent layer 103b of the first cladding layer 103, the entire thickness direction of the central portion of the active layer 104, and the entire thickness direction of the second cladding layer 105. In the surface-emitting laser 400, the cathode electrode 109 is provided on the back surface of the substrate 101, and the anode electrode 108 is provided on the mesa top, so that a current path flowing laterally (in-plane) through the second constituent layer 103b of the first cladding layer 103 is not required as the current path. Therefore, there is no problem even if the first confinement portion C1 surrounds the entire thickness direction of the second constituent layer 103b.

[0105] (2) Operation of surface-emitting lasers In the surface-emitting laser 400, a current supplied from, for example, a laser driver and flowing in from the anode electrode 108 passes through the second multilayer reflector 106, is confined (narrowed) by the first and second confinement sections C1 and C2, and is injected into the active layer 104. At this time, the active layer 104 emits light, and the light generated in the active layer 104 travels back and forth between the first and second multilayer reflectors 102 and 106, is confined by the second confinement section C2 during this travel, is amplified in the active layer 104, and is emitted to the outside from the back surface of the substrate 101 when oscillation conditions are met. The current passing through the active layer 104 flows through the first cladding layer 103, the first multilayer reflector 102, and the substrate 101 into the cathode electrode 109, and flows out from the cathode electrode 109 to, for example, the laser driver.

[0106] (3) Manufacturing method of surface-emitting laser A method for manufacturing the surface-emitting laser 400 will be described below with reference to the flowchart of Fig. 3. The surface-emitting laser 400 is manufactured by, for example, a semiconductor manufacturing method using semiconductor manufacturing equipment.

[0107] <Step S1> In step S1, a first stacked body production process is performed. In the first stacked body production process, for example, a chemical vapor deposition (CVD) method, such as metal-organic chemical vapor deposition (MOCVD) method, is used to deposit first multilayer reflector 102 and first constituent layer 103a of first cladding layer 103 on substrate 101 (hereinafter also referred to as "first substrate 101") in a growth chamber (for example, by epitaxial growth at a growth temperature of 605°C) to produce first stacked body L1 (see FIG. 4). When performing MOCVD, the source gas for gallium is, for example, trimethylgallium ((CH3)3Ga), the source gas for aluminum is, for example, trimethylaluminum ((CH3)3Al), the source gas for indium is, for example, trimethylindium ((CH3)3In), and the source gas for As is, for example, trimethylarsenic ((CH3)3As). The source gas for silicon is, for example, monosilane (SiH4). As a carbon source gas, for example, carbon tetrabromide (CBr4) is used.

[0108] <Step S2> In step S2, a second laminate generation process is carried out. Hereinafter, a second stacked body generating process 2, which is an example of a second stacked body generating process performed to manufacture the surface-emitting laser 400, will be described with reference to the flowchart of FIG.

[0109] In step S2-2-1, as an example, a chemical vapor deposition (CVD) method, such as the metal organic chemical vapor deposition (MOCVD) method described above, is used to stack the second multilayer reflector 106, the second cladding layer 105, the active layer 104, and the second constituent layer 103b of the first cladding layer 103 on the second substrate 112 in a growth chamber (e.g., by epitaxial growth at a growth temperature of 605°C) to generate a stack (see Figure 39).

[0110] In step S2-2-2, a frame-shaped recess 103b1 (a circular recess) is formed in the second constituent layer 103b of the first cladding layer 103 of the laminate shown in FIG. 39 (see FIG. 40). Specifically, a resist pattern RP3 having a frame-shaped opening is formed on the second constituent layer 103b to form the recess 103b1. Next, at least a portion of the second constituent layer 103b is removed by etching, for example, using a wet etching method, to form the recess 103b1. Thereafter, the resist pattern RP3 is removed. At this time, an air layer remains inside the recess 103b1. Thereafter, the recess 103b1 is filled with the semi-insulating or insulating material described above, as necessary. By performing step S2-2-2, the second confinement section C2 is formed.

[0111] In step S2-2-3, ion implantation is performed (see FIG. 41). Specifically, a resist pattern RP4 is formed on the second constituent layer 103b of the second cladding layer 103, with openings only at the locations where the first confinement portion C1 will be formed, and ion implantation is performed. The ion implantation region (the region where ions are present) formed by this ion implantation extends, for example, at least to the entire thickness direction of the second constituent layer 103b of the first cladding layer 103, the entire thickness direction of the active layer 104, and the entire thickness direction of the second cladding layer 105. The resist pattern RP4 is then removed. At this time, an air layer remains inside the recess 103b1. Thereafter, a semi-insulating or insulating material is filled into the recess 103b1 as necessary. As a result, the first confinement portion C1 is formed, and a second stacked body L2 is obtained.

[0112] The order of steps S2-2-2 and S2-2-3 may be reversed. That is, after ion implantation into the second component layer 103b to generate the first confining section C1, the frame-shaped recess 103b1 may be formed to generate the second confining section C2.

[0113] <Step S3> In step S3, the first and second laminates are bonded together (see FIGS. 42 and 43). Specifically, for example, the first constituent layer 103a of the first clad layer 103 of the first laminate L1 is bonded to the second constituent layer 103b of the first clad layer 103 of the second laminate L2 using any of the bonding methods (1) to (4) described above.

[0114] <Step S4> In step S4, the second substrate 112 is removed (see FIG. 44). Specifically, the second substrate 112 (see FIG. 43) is ground to thin it, and then the thinned second substrate 112 is removed by wet etching. As a result, the surface of the second multilayer film reflector 106 is exposed.

[0115] <Step S5> In step S5, the mesa M is formed (see FIG. 45). Specifically, as an example, the second multilayer film reflector 106, the second cladding layer 105, the active layer 104, and the upper part of the second component layer 103b of the first cladding layer 103 are etched to form the mesa M. More specifically, a resist pattern for forming the mesa M is generated on the second multilayer reflector 106 by photolithography. Next, using this resist pattern as a mask, the stack obtained by performing step S4 is etched, for example, by RIE (reactive ion etching), until the second constituent layer 103b of the first cladding layer 103 is exposed (for example, until the side surface of the active layer 104 is completely exposed), thereby forming the mesa M whose outer diameter is 1 to 40 μm longer than the outer diameter of the recess 103b1. This etching is carried out until the bottom of the etched surface is located within the second constituent layer 103b of the first cladding layer 103. Thereafter, the resist pattern is removed.

[0116] <Step S6> In step S6, the anode electrode 108 is formed (see FIG. 46). The anode electrode 108 can be formed by, for example, a lift-off method. In step S6, the anode electrode 108 is formed on the top of the mesa M (the surface of the second multilayer film reflector 106) by, for example, vacuum deposition or sputtering. More specifically, the anode electrode 108 is formed so that its diameter is shorter than the diameter of the mesa M by, for example, 1 to 200 μm.

[0117] <Step S7> The insulating film 107 is formed (see FIG. 47). Specifically, the insulating film 107 is formed on the mesa M and its surrounding area by, for example, vacuum deposition or sputtering.

[0118] <Step S8> In step S8, a portion of the insulating film 107 is removed (see FIG. 48). Specifically, the insulating film 107 on the anode electrode 108 is removed by, for example, RIE using a solution containing hydrogen fluoride. As a result, the anode electrode 108 is exposed.

[0119] <Step S9> In step S9, the cathode electrode 109 is formed (see FIG. 49). Specifically, for example, by lift-off, the frame-shaped (for example, annular) cathode electrode 109 is formed on the rear surface of the substrate 101. At this time, the inner diameter side of the cathode electrode 109 becomes the emission port.

[0120] <Step S10> In step S10, the pad wiring 110 is formed (see FIG. 50). The pad wiring 110 can be formed by, for example, a lift-off method. The pad wiring 110 is formed on the mesa M and its peripheral region, and on the cathode electrode 109 by, for example, a vacuum deposition method, a sputtering method, or the like.

[0121] <Step S11> In step S11, plated wiring 111 is formed (see FIG. 51). The plated wiring 111 is formed by, for example, a plating method on almost the entire area of ​​the pad wiring 110 formed on the mesa M and the peripheral region of the mesa M, and on the pad wiring 110 formed on the cathode electrode 109.

[0122] (4) Effects of the surface-emitting laser and its manufacturing method The surface-emitting laser 400 according to the fourth embodiment of the present technology has the same effects as the surface-emitting laser 100 according to the first embodiment.

[0123] The manufacturing method of the surface-emitting laser 400 includes the steps of stacking a first structure including a first multilayer reflector 102 and a first part of the resonator (e.g., the first constituent layer 103a of the first cladding layer 103) on a first substrate 101 in this order to produce a first laminate L1, producing a second laminate L2, and bonding the first and second laminates L1 and L2. The step of producing the second laminate L2 involves stacking a second structure including a second multilayer reflector 106 and a second part of the resonator (e.g., the second constituent layer 103b of the first cladding layer 103) on a second substrate 112 in this order to form a frame-shaped recess 103b1 in the second part of the resonator, and bonding the second part of the resonator in the second laminate L2 to the first part of the resonator in the first laminate.

[0124] According to the manufacturing method of the surface-emitting laser 400, the same effects as those of the surface-emitting laser 100 of the first embodiment can be achieved, and the second constituent layer 103b of the first cladding layer 103 does not need to be grown in two separate steps, thereby reducing the number of manufacturing steps.

[0125] 7. Surface-emitting lasers according to first to fourth modifications of the fourth embodiment of the present technology Surface-emitting lasers according to first to fourth modifications of the fourth embodiment of the present technology will be described below.

[0126] (Variation 1) In the surface-emitting laser 400-1 of the first modification, a junction J exists between the first multilayer reflector 102 and the first cladding layer 103, as shown in FIG. In the surface-emitting laser 400-1, as an example, the entire thickness direction of the central portion of the first cladding layer 103, the entire thickness direction of the central portion of the active layer 104, and the entire thickness direction of the central portion of the second cladding layer 105 are surrounded by the first confinement section C1. In the surface-emitting laser 400-1, as an example, a frame-shaped recess 103c (second confinement portion C2) is formed on the bonding surface of the first cladding layer 103 where the first multilayer film reflector 102 is bonded. That is, in the surface-emitting laser 400-1, the first confinement section C1 is provided in a region including a second bonding surface, which is a bonding surface of the second component section with the first component section, among the first component section on one side (e.g., the upper side) of the bonding section J and the second component section on the other side (e.g., the lower side) of the bonding section J. Here, the first component section includes at least the first multilayer film reflector 102 out of the substrate 101 and the first multilayer film reflector 102. The second component section includes at least the first cladding layer 103 out of the first cladding layer 103, the active layer 104, the second cladding layer 105, and the second multilayer film reflector 106. In the surface-emitting laser 400-1, the second confinement section C2 is provided at a second bonding surface, which is a bonding surface between the first component section and the second component section on one side (e.g., the upper side) of the bonding section J and the second component section on the other side (e.g., the lower side). Here, the first component section includes at least the first multilayer film reflector 102 out of the substrate 101 and the first multilayer film reflector 102. The second component section includes at least the first cladding layer 103 out of the first cladding layer 103, the active layer 104, the second cladding layer 105, and the second multilayer film reflector 106.

[0127] An example of a method for manufacturing the surface-emitting laser 400-1 will be briefly described. Step 1: A first multilayer reflector 102 is laminated on a substrate 101 (first substrate 101) to produce a first laminate. Step 2: A second multilayer reflector 106, a second cladding layer 105, an active layer 104, and a first cladding layer 103 are laminated on a second substrate 112 in this order from the second substrate 112 side to form a second laminate. Step 3: A frame-shaped recess 103c is formed in the first cladding layer 103 of the second laminate by etching, and a semi-insulating or insulating material is filled in the recess 103c as needed to form a second confinement portion C2. Step 4: Ion implantation, vacancy diffusion, impurity diffusion, etc. are performed on the first cladding layer 103 of the second stack to form a frame-shaped current confinement portion, thereby generating the first confinement portion C1. The implantation depth and diffusion depth at this time are set to, for example, up to the underside of the second cladding layer 105. Step 5: The first cladding layer 103 of the second laminate and the first multilayer reflector 102 of the first laminate are bonded together by, for example, any of the bonding methods (1) to (4) above. Thereafter, steps similar to steps S4 to S11 in FIG. 3 are carried out.

[0128] According to the surface-emitting laser 400-1, it is possible to obtain the same effects as those of the surface-emitting laser 400 of the fourth embodiment, and since the first confinement section C1 of the surface-emitting laser 400 is extended upstream of the current path, the effect of confining the current to the active layer 104 can be obtained at an earlier stage.

[0129] (Variation 2) The surface-emitting laser 400-2 of variant 2 has a configuration similar to that of the surface-emitting laser 400-1 of variant 1, except that a portion of the thickness direction of the central portion of the first multilayer film reflector 102 (the portion on the first cladding layer 103 side) is also surrounded by the first confinement section C1, as shown in Figure 53. That is, in the surface-emitting laser 400-2, the first confinement section C1 is provided in a region of the first component section on one side (e.g., the upper side) of the joint J and a region of the second component section on the other side (e.g., the lower side) of the joint J, the first confinement section C1 being provided in a region including a first bonding surface of the first component section, which is a bonding surface of the first component section with the second component section, and a region of the second component section including a second bonding surface of the second component section, which is a bonding surface of the second component section with the first component section. Here, the first component section includes at least the first multilayer film reflector 102 out of the substrate 101 and the first multilayer film reflector 102. The second component section includes at least the first cladding layer 103 out of the first cladding layer 103, the active layer 104, the second cladding layer 105, and the second multilayer film reflector 106. The surface-emitting laser 400-2 can be manufactured by a manufacturing method generally similar to that of the surface-emitting laser 400-1 described above. However, in step 1 of the manufacturing method of the surface-emitting laser 400-1, after the first multilayer film reflector 102 is stacked on the substrate 101, ion implantation, vacancy diffusion, impurity diffusion, etc. are performed on the first multilayer film reflector 102 to form a frame-shaped current confinement portion, thereby generating a first confinement portion C1 in the first multilayer film reflector 102 as well.

[0130] According to the surface-emitting laser 400-2, it is possible to obtain the same effects as those of the surface-emitting laser 400-1 of the first modification, and since the first confinement section C1 is extended upstream of the current path compared to the first confinement section C1 of the surface-emitting laser 400-1, it is possible to obtain the current confinement effect on the active layer 104 at an earlier stage.

[0131] (Variation 3) 54, in the surface-emitting laser 400-3 of the third modification, a joint J is present between the first multilayer reflector 102 and the first cladding layer 103, and also within the first structure (for example, between the substrate 101 and the first multilayer reflector 102). In the surface-emitting laser 400-3, the first cladding layer 103 is made up of a single layer. In the surface-emitting laser 400-3, as an example, the entire thickness direction of the central portion of the first multilayer reflector 102, the entire thickness direction of the central portion of the first cladding layer 103, the entire thickness direction of the central portion of the active layer 104, and the entire thickness direction of the central portion of the second cladding layer 105 are surrounded by the first confinement section C1. In the surface-emitting laser 400-3, as an example, a frame-shaped recess 103c (second confinement section C2) is formed on the bonding surface of the first cladding layer 103 with the first multilayer film reflector 102, and a frame-shaped recess 102a (second confinement section C2) is formed on the bonding surface of the first multilayer film reflector 102 with the substrate 101. That is, in the surface-emitting laser 400-3, one (e.g., upper) first confinement section C1 is provided in a region including a second bonding surface, which is a bonding surface of the second component section with the first component section, among the first component section on one side (e.g., the upper side) of one (e.g., upper) bonding section J and the second component section on the other side (e.g., the lower side). Here, the first component section includes a substrate 101. The second component section includes at least the first multilayer film reflector 102 among the first multilayer film reflector 102, the first cladding layer 103, the active layer 104, the second cladding layer 105, and the second multilayer film reflector 106. In the surface-emitting laser 400-3, the other (e.g., lower) first confinement section C1 is provided in a region including a second bonding surface, which is a bonding surface of the second component section with the first component section, among the first component section on one side (e.g., the upper side) of the other (e.g., lower) bonding section J and the second component section on the other side (e.g., the lower side). Here, the first component section includes at least the first multilayer film reflector 102 out of the substrate 101 and the first multilayer film reflector 102. The second component section includes at least the first cladding layer 103 out of the first cladding layer 103, the active layer 104, the second cladding layer 105, and the second multilayer film reflector 106. In the surface-emitting laser 400-3, one (e.g., upper) second confinement section C2 is provided at a second bonding surface, which is a bonding surface between the first component section and the second component section on one side (e.g., upper side) of one (e.g., upper) bonding section J and the other side (e.g., lower side) of the second component section. Here, the first component section includes a substrate 101. The second component section includes at least the first multilayer film reflector 102 out of the first multilayer film reflector 102, first cladding layer 103, active layer 104, second cladding layer 105, and second multilayer film reflector 106. In the surface-emitting laser 400-3, the other (e.g., lower) second confinement section C2 is provided at a second bonding surface, which is a bonding surface between the second component and the first component, of the first component on one side (e.g., upper side) of the other (e.g., lower) bonding section J and the second component on the other side (e.g., lower side). Here, the first component includes at least the first multilayer film reflector 102 out of the substrate 101 and the first multilayer film reflector 102. The second component includes at least the first cladding layer 103 out of the first cladding layer 103, the active layer 104, the second cladding layer 105, and the second multilayer film reflector 106.

[0132] An example of a method for manufacturing the surface-emitting laser 400-3 will be briefly described. Step 1: A first multilayer reflector 102 is laminated on a substrate 1 to form a laminate 1 . Step 2: A frame-shaped recess 102a is formed in the first multilayer reflector 102 of the laminate 1 by etching, and a semi-insulating or insulating material is filled in the recess 102a as needed to form a second confining portion C2. Step 3: Ion implantation, vacancy diffusion, impurity diffusion, etc. are performed on the first multilayer reflector 102 of the laminate 1 to form a frame-shaped current confinement portion, thereby generating a first confinement portion C1 in the first multilayer reflector 102. Step 4: The second multilayer reflector 106, the second cladding layer 105, the active layer 104, and the first cladding layer 103 are laminated on the substrate 112 in this order from the substrate 112 side to produce the laminate 2. Step 5: A frame-shaped recess 103c is formed in the first cladding layer 103 of the laminate 2 by etching, and a semi-insulating or insulating material is filled in the recess 103c as needed, thereby generating a second confinement section C2 in the first cladding layer 103. Step 6: Ion implantation, vacancy diffusion, impurity diffusion, etc. are performed on the first cladding layer 103 of the laminate 2 to form a frame-shaped current confinement portion, thereby generating the first confinement portion C1 in the resonator. Step 7: The first substrate 101 and the first multilayer film reflector 102 of the laminate 1 are bonded together by, for example, any of the bonding methods (1) to (4) above. Step 8: The substrate 1 of the laminate 1 is thinned and removed by wet etching, thereby exposing the first multilayer film reflector 102 of the laminate 1. Step 9: The first multilayer reflector 102 of the laminate 1 and the first cladding layer 103 of the laminate 2 are bonded together by, for example, any of the bonding methods (1) to (4) above. Thereafter, steps similar to steps S4 to S11 in FIG. 3 are carried out.

[0133] According to the surface-emitting laser 400-3, it is possible to obtain the same effect as the surface-emitting laser 400-2 of the second modification, and since the first confinement section C1 of the surface-emitting laser 400-2 is extended upstream of the current path, the current confinement effect can be obtained earlier, and since the second confinement section C2 is also provided in the first multilayer film reflector 102, it is possible to obtain a stronger light confinement effect in the active layer 104.

[0134] (Variation 4) 55, in the surface-emitting laser 400-4 of the third modification, a joint J is present between the first multilayer reflector 102 and the first cladding layer 103, a joint J is present between the substrate 101 and the first multilayer reflector 102, and a joint J is present between the second cladding layer 105 and the second multilayer reflector 106. In the surface-emitting laser 400-4, the first cladding layer 103 is made up of a single layer. In the surface-emitting laser 400-4, as an example, the entire thickness direction of the central portion of the first multilayer reflector 102, the entire thickness direction of the central portion of the first cladding layer 103, the entire thickness direction of the central portion of the active layer 104, and the entire thickness direction of the central portion of the second cladding layer 105 are surrounded by the first confinement section C1. In the surface-emitting laser 400-4, as an example, a frame-shaped recess 103c (second confinement section C2) is formed on the bonding surface of the first cladding layer 103 to the first multilayer film reflector 102, a frame-shaped recess 102a (second confinement section C2) is formed on the bonding surface of the first multilayer film reflector 102 to the substrate 101, and a frame-shaped recess 106a (second confinement section C2) is formed on the bonding surface of the second multilayer film reflector 106 to the second cladding layer 105. That is, in the surface-emitting laser 400-4, the lowermost second confinement section C2 is provided at a second bonding surface, which is a bonding surface between the first component section and the second component section on one side (e.g., the upper side) of the lowermost bonding section J and the second component section on the other side (e.g., the lower side). Here, the first component section includes at least the second cladding layer 105 out of the substrate 101, the first multilayer film reflector 102, the first cladding layer 103, the active layer 104, and the second cladding layer 105. The second component section includes the second multilayer film reflector 106.

[0135] An example of a method for manufacturing the surface-emitting laser 400-4 will be briefly described. Step 1: A first multilayer reflector 102 is laminated on a substrate 1 to form a laminate 1 . Step 2: A frame-shaped recess 102a is formed in the first multilayer film reflector 102 of the laminate 1 by etching. Step 3: Ion implantation, vacancy diffusion, impurity diffusion, etc. are performed on the first multilayer reflector 102 of the laminate 1 to form a frame-shaped current confinement portion, thereby generating a first confinement portion C1 in the first multilayer reflector 102. Step 4: The second cladding layer 105, the active layer 104, and the first cladding layer 103 are laminated on the substrate 2 in this order from the substrate 2 side to form the laminate 2. Step 5: A frame-shaped recess 103c is formed in the first cladding layer 103 of the laminate 2 by etching, and a semi-insulating or insulating material is filled in the recess 103c as needed, thereby generating a second confinement section C2 in the first cladding layer 103. Step 6: Ion implantation, vacancy diffusion, impurity diffusion, etc. are performed on the first cladding layer 103 of the laminate 2 to form a frame-shaped current confinement portion, thereby generating the first confinement portion C1 in the resonator. Step 7: The second multilayer reflector 106 is laminated on the substrate 112 to form the laminate 3 . Step 8: A frame-shaped recess 106a is formed in the second multilayer reflector 106 of the laminate 3 by etching, and if necessary, a semi-insulating or insulating material is filled in the recess 106a to generate a second confinement section C2 in the second multilayer reflector 106. Step 9: The first substrate 101 and the first multilayer film reflector 102 of the laminate 1 are bonded together by, for example, any of the bonding methods (1) to (4) above. Step 10: The substrate 1 of the laminate 1 is thinned and removed by wet etching, thereby exposing the first multilayer film reflector 102 of the laminate 1. Step 11: The first multilayer reflector 102 of the laminate 1 and the first cladding layer 103 of the laminate 2 are bonded together by, for example, any of the bonding methods (1) to (4) above. Step 12: The substrate 2 of the laminate 2 is thinned and removed by wet etching, thereby exposing the second cladding layer 105 of the laminate 2. Step 13: The second cladding layer 105 of the laminate 2 and the second multilayer reflector 106 of the laminate 3 are bonded together by, for example, any of the bonding methods (1) to (4) above. Thereafter, steps similar to steps S4 to S11 in FIG. 3 are carried out.

[0136] The surface-emitting laser 400-4 can achieve the same effect as the surface-emitting laser 400-3 of the second modification, and compared to the surface-emitting laser 400-3, the second multilayer reflector 106 is also provided with the second confinement section C2, thereby achieving a stronger light confinement effect in the active layer 104.

[0137] As can be seen from the above description, the surface-emitting laser of the present technology can form the first confinement section C1 at a desired position (for example, the junction J or a position relatively close to the junction J) with good width controllability by selecting at least one position where the junction J is to be provided. The surface-emitting laser of the present technology can form the second confinement section C2 at a desired position (for example, the junction J) with good width controllability by selecting at least one position where the junction J is to be provided.

[0138] 8. Example of a surface-emitting laser configuration to which this technology can be applied Fig. 56 is a plan view showing a surface-emitting laser 2000, which is a structural example of a surface-emitting laser to which the present technology can be applied. Fig. 57A is a cross-sectional view taken along line XX in Fig. 56. Fig. 57B is a cross-sectional view taken along line YY in Fig. 56.

[0139] Each component of the surface-emitting laser 2000 is laminated on a substrate 2001. The substrate 2001 can be configured to include a semiconductor such as GaAs, InGaAs, InP, or InAsP.

[0140] The surface-emitting laser 2000 includes a protection region 2002 (the transparent gray region in FIGS. 57A and 57B). As shown in FIG. 56, the protection region 2002 has a circular shape in a plan view, but is not limited to a specific shape and may have another shape, such as an elliptical shape or a polygonal shape. The protection region 2002 includes a material that provides electrical isolation, and is, for example, an ion-implanted region.

[0141] Furthermore, as shown in FIGS. 57A and 57B, the surface-emitting laser 2000 includes a first electrode 2003 and a second electrode 2004. As shown in FIG. 56, the first electrode 2003 has a ring shape having discontinuous portions (intermittent portions) in a plan view, i.e., a split ring shape, but is not limited to a specific shape. As shown in FIG. 57A or 57B, the second electrode 2004 is in contact with the substrate 2001. The first electrode 2003 and the second electrode 2004 are composed of a conductive material such as Ti, Pt, Au, AuGeNi, or PdGeAu. The first electrode 2003 and the second electrode 2004 may have a single-layer structure or a multilayer structure.

[0142] The surface-emitting laser 2000 further includes trenches 2005 provided around the protection region 2002. FIG. 56 shows, as an example, a structure in which six rectangular trenches 2005 are provided in a plan view, but the number and shape of the trenches 2005 are not limited to a specific one. The trenches 2005 are openings for forming the oxidized constriction layer 2006 (including the oxidized region 2006a and the non-oxidized region 2006b). During the manufacturing process of the surface-emitting laser 2000, high-temperature water vapor is supplied through the trenches 2005 to form the oxidized region 2006a of the oxidized constriction layer 2006. For example, the oxidized region 2006a is Al2O3 formed as a result of oxidation of an AlAs or AlGaAs layer. After the process of forming the oxidized constriction layer 2006, the trenches 2005 may be filled with any dielectric material. Alternatively, the surface may be coated with a dielectric film.

[0143] Furthermore, the surface-emitting laser 2000 includes a dielectric opening 2008 (contact hole) provided in a dielectric layer 2007 on the first electrode 2003. The dielectric layer 2007 may have a multilayer structure as shown in FIGS. 57A and 57B, or may have a single-layer structure. The dielectric layer 2007 includes, for example, silicon oxide or silicon nitride. As shown in FIG. 56, the dielectric opening 2008 is formed in the same shape as the first electrode 2003. However, the shape of the dielectric opening 2008 is not limited to the shape of the first electrode 2003, and the dielectric opening 2008 may be formed partially on the first electrode 2003. The dielectric opening 2008 is filled with a conductive material (not shown), and the conductive material comes into contact with the first electrode 2003.

[0144] 57A and 57B, the surface-emitting laser 2000 includes an optical aperture 2009 inside the first electrode 2003. The surface-emitting laser 2000 emits light through the optical aperture 2009. Furthermore, in the surface-emitting laser 2000, the oxidized region 2006a of the oxidized constriction layer 2006 functions as a current / light confinement region that confines current and light. The non-oxidized region 2006b of the oxidized constriction layer 2006 is located below the optical aperture 2009 and functions as a current / light passage region that allows current and light to pass through.

[0145] Furthermore, the surface-emitting laser 2000 includes a first multilayer reflector 2011 and a second multilayer reflector 2012. The multilayer reflector is, for example, a semiconductor multilayer reflector, also called a distributed Bragg reflector.

[0146] The surface-emitting laser 2000 further includes an active layer 2013. The active layer 2013 is disposed between the first multilayer reflector 2011 and the second multilayer reflector 2012, and confines injected carriers to determine the emission wavelength of the surface-emitting laser 2000.

[0147] In this configuration example, the surface-emitting laser 2000 is a surface-emitting surface-emitting laser, but the surface-emitting laser 2000 can also be a bottom-emitting surface-emitting laser.

[0148] As shown in FIGS. 56 and 57A, the substantial diameter of the surface-emitting laser 2000 of this configuration example is the diameter d of an imaginary circle defined by the trench 2005.

[0149] The surface-emitting laser 2000 of this configuration example is manufactured, for example, by the following steps 1 to 8. (Step 1) On the surface of the substrate 2001, the first multilayer reflector 2011, the active layer 2013, a selectively oxidized layer that will become the oxidized constriction layer 2006, and the second multilayer reflector 2012 are epitaxially grown. (Step 2) The first electrode 2003 is formed on the second multilayer reflector 2012 by, for example, lift-off. (Step 3) A trench 2005 is formed by, for example, photolithography. (Step 4) The side surface of the selectively oxidized layer is exposed, and the selectively oxidized layer is selectively oxidized from the side surface to form an oxidized constriction layer 2006 . (Step 5) A protection region 2002 is formed by ion implantation or the like. (Step 6) A dielectric layer 2007 is formed by, for example, vapor deposition or sputtering. (Step 7) A dielectric opening 2008 is formed in the dielectric layer 2007 by, for example, photolithography, to expose the contact point of the first electrode 2003. (Step 8) After the rear surface of the substrate 2001 is polished to make it thinner, a second electrode 2004 is formed on the rear surface of the substrate 2001.

[0150] The number, arrangement, thickness, arrangement order, symmetry, and the like of the layers constituting the surface-emitting laser 2000 described above are merely examples and can be changed as appropriate. That is, the surface-emitting laser 2000 may include more layers, fewer layers, different layers, layers with different structures, or layers with different arrangements than those shown in Figures 56, 57A, and 57B.

[0151] The present technology can be applied to the surface-emitting laser 2000 described above and its modified examples.

[0152] 9. Modifications of this technology The present technology is not limited to the above-described embodiments and modifications, and various modifications are possible.

[0153] In the surface-emitting laser of the present technology, the junction J may be present in at least one of the first structure, the second structure, the resonator, between the resonator and the first structure, and between the resonator and the second structure. Furthermore, in the surface-emitting laser of the present technology, it is preferable that a first confinement portion C1 that confines current is provided in at least one of the first and second components joined by the junction J, and a second confinement portion C2 that confines at least light out of current and light is provided in at least one of the first and second components.

[0154] One of the first and second components may be provided with first and second confinement sections C1, C2.

[0155] The first confinement section C1 may be provided in one of the first and second components, and the second confinement section C2 may be provided in the other.

[0156] The second confinement section may be provided on a first bonding surface which is a bonding surface of the first component with the second component and / or a second bonding surface which is a bonding surface of the second component with the first component.

[0157] The first confinement section may be provided in a region of the first component that does not include a first bonding surface, which is the bonding surface of the first component with the second component, and / or in a region of the second component that does not include a second bonding surface, which is the bonding surface of the second component with the first component.

[0158] The first confinement section may be provided in a region of the first component including a first bonding surface, which is the bonding surface of the first component with the second component, and / or in a region of the second component including a second bonding surface, which is the bonding surface of the second component with the first component.

[0159] For example, in each of the above-described embodiments and modified examples, the first confinement section C1 is formed by performing impurity diffusion (e.g., ion implantation, vacancy diffusion, impurity diffusion, etc.) before bonding between the components during the manufacture of the surface-emitting laser, but the first confinement section C1 may also be formed by performing ion implantation, vacancy diffusion, impurity diffusion, etc. after bonding between the components.

[0160] For example, the surface-emitting laser according to the present technology may have four or more junctions J.

[0161] For example, in the surface-emitting laser of the present technology, the junction J may be present in the substrate 101. In this case, the first confinement portion C1 and / or the second confinement portion C2 may be provided in the substrate 101.

[0162] For example, in the surface-emitting laser of the present technology, the junction J may be present in the first multilayer reflector 102 and / or the second multilayer reflector 106. In this case, the first confinement section C1 and / or the second confinement section C2 may be provided in the first multilayer reflector 102 and / or the second multilayer reflector 106.

[0163] For example, in each of the above-described embodiments and modifications, the first confining section C1 is provided as a continuous, integral unit, but it may also be provided as a plurality of discontinuous, separate units.

[0164] For example, in each of the above-described embodiments and modifications, the substrate 101 of the surface-emitting laser may be made of Si, GaN, InP, etc. The surface-emitting laser of the present technology can use any material that produces an oscillation wavelength in the wavelength band of 200 to 2000 nm.

[0165] For example, in each of the above embodiments and modifications, the first and second multilayer film reflectors 102 and 106 may each be made of a dielectric material or a metal.

[0166] For example, in each of the above-described embodiments and modifications, the pad wiring 110 may be formed by plating (the pad wiring 110 may be a plated wiring).

[0167] For example, in each of the above-described embodiments and modifications, instead of the plated wiring 111, wiring (wiring other than plated wiring) may be formed on the pad wiring 110 by, for example, a lift-off method.

[0168] For example, in each of the above-described embodiments and modifications, one of the pad wiring 110 and the plated wiring 111 may not be provided.

[0169] For example, in each of the above-described embodiments and modifications, the surface-emitting laser does not have to have a mesa.

[0170] For example, in each of the above-described embodiments and modifications, the surface-emitting laser may have a structure in which carriers are injected into the active layer 104 by light. In this case, the electrodes and wirings are not required.

[0171] For example, in each of the above-described embodiments and modifications, the surface-emitting laser may be a gain-guided type having only the first confinement section C1 without the second confinement section C2.

[0172] For example, in each of the above embodiments and modified examples, the surface-emitting laser may be a gain-guided type in which a second confinement portion C2 serving as a current confinement portion is formed by embedding a material having a higher refractive index and higher electrical resistance than the central portion surrounded by the concave portion in a frame-shaped concave portion provided at or near the junction J.

[0173] For example, in each of the above-described embodiments and modifications, a contact layer that contacts the electrode may be provided on the top of the mesa.

[0174] For example, in each of the above embodiments and modifications, the first structure including the substrate 101 and the first multilayer reflector 102 may have a buffer layer between the substrate 101 and the first multilayer reflector 102. In this case, a junction J may be present inside at least one of the substrate 101, the first multilayer reflector 102, and the buffer layer, or a junction J may be present between the substrate 101 and the buffer layer and / or between the buffer layer and the first multilayer reflector 102. In this case, a first confining section C1 may be provided at the junction J or at a location other than the junction J, or a second confining section C2 may be provided at the junction J.

[0175] For example, a surface-emitting laser array can be configured by including a plurality of surface-emitting lasers according to any one of the above-described embodiments and modifications.

[0176] Parts of the configurations of the surface-emitting lasers of the above-described embodiments and modifications may be combined within a range that does not contradict each other.

[0177] In each of the above-described embodiments and modifications, the material, conductivity type, thickness, width, and other values ​​of each layer constituting the surface-emitting laser can be changed as appropriate within the range in which the surface-emitting laser functions.

[0178] 10. Application examples to electronic devices The technology according to the present disclosure (the present technology) can be applied to various products (electronic devices). For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0179] The surface-emitting laser according to the present technology can also be used as a light source for devices that form or display images using laser light (for example, laser printers, laser copiers, projectors, head-mounted displays, head-up displays, etc.).

[0180] 11.<Example of applying a surface-emitting laser to a distance measurement device> Hereinafter, application examples of the surface-emitting lasers according to the above-described embodiments and modifications will be described.

[0181] 58 illustrates an example of a schematic configuration of a distance measurement device 1000 including a surface-emitting laser 100, as an example of an electronic device according to the present technology. The distance measurement device 1000 measures the distance to a subject S by a TOF (Time Of Flight) method. The distance measurement device 1000 includes the surface-emitting laser 100 as a light source. The distance measurement device 1000 includes, for example, the surface-emitting laser 100, a light-receiving device 120, lenses 115 and 130, a signal processing unit 140, a control unit 150, a display unit 160, and a storage unit 170.

[0182] The light receiving device 120 detects the light reflected by the subject S. The lens 115 is a collimating lens that collimates the light emitted from the surface-emitting laser 100. The lens 130 is a condensing lens that collects the light reflected by the subject S and guides it to the light receiving device 120.

[0183] The signal processing unit 140 is a circuit for generating a signal corresponding to the difference between the signal input from the light receiving device 120 and a reference signal input from the control unit 150. The control unit 150 is configured to include, for example, a Time to Digital Converter (TDC). The control unit 150 may be a signal input from the control unit 150, or an output signal of a detection unit that directly detects the output of the surface-emitting laser 100. The control unit 150 is, for example, a processor that controls the surface-emitting laser 100, the light-receiving device 120, the signal processing unit 140, the display unit 160, and the storage unit 170. The control unit 150 is a circuit that measures the distance to the subject S based on the signal generated by the signal processing unit 140. The control unit 150 generates a video signal for displaying information about the distance to the subject S and outputs it to the display unit 160. The display unit 160 displays the information about the distance to the subject S based on the video signal input from the control unit 150. The control unit 150 stores the information about the distance to the subject S in the storage unit 170.

[0184] In this application example, instead of the surface-emitting laser 100, any of the surface-emitting lasers 100-1 to 100-15, 200, 300, 400, and 400-1 to 400-4 can be applied to the distance measurement device 1000. 12.<Example of distance measurement device mounted on a moving object>

[0185] FIG. 59 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology according to the present disclosure can be applied.

[0186] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 59, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053.

[0187] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, a braking device for generating a braking force of the vehicle, etc.

[0188] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches may be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0189] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, a distance measurement device 12031 is connected to the outside-vehicle information detection unit 12030. The distance measurement device 12031 includes the above-described distance measurement device 1000. The outside-vehicle information detection unit 12030 causes the distance measurement device 12031 to measure the distance to an object outside the vehicle (subject S), and acquires the distance data obtained thereby. The outside-vehicle information detection unit 12030 may perform object detection processing for people, cars, obstacles, signs, etc. based on the acquired distance data.

[0190] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0191] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drivetrain control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including avoiding or mitigating collisions between vehicles, following based on the distance between vehicles, maintaining vehicle speed, warning of vehicle collisions, or warning of vehicle lane departure.

[0192] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0193] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information about the outside of the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

[0194] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying information to vehicle occupants or the outside of the vehicle. In the example of Fig. 59, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0195] FIG. 60 is a diagram showing an example of the installation position of the distance measurement device 12031.

[0196] In FIG. 60, a vehicle 12100 has distance measurement devices 12101, 12102, 12103, 12104, and 12105 as a distance measurement device 12031.

[0197] Distance measuring devices 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of vehicle 12100. Distance measuring device 12101 provided at the front nose and distance measuring device 12105 provided at the top of the windshield inside the vehicle cabin mainly acquire data ahead of vehicle 12100. Distance measuring devices 12102 and 12103 provided at the side mirrors mainly acquire data on the sides of vehicle 12100. Distance measuring device 12104 provided at the rear bumper or back door mainly acquires data behind vehicle 12100. The forward data acquired by distance measuring devices 12101 and 12105 is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, etc.

[0198] 60 shows an example of the detection ranges of the distance measurement devices 12101 to 12104. Detection range 12111 indicates the detection range of the distance measurement device 12101 provided on the front nose, detection ranges 12112 and 12113 indicate the detection ranges of the distance measurement devices 12102 and 12103 provided on the side mirrors, respectively, and detection range 12114 indicates the detection range of the distance measurement device 12104 provided on the rear bumper or back door.

[0199] For example, the microcomputer 12051 can extract, as a preceding vehicle, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (for example, 0 km / h or higher) by calculating the distance to each three-dimensional object within the detection ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100) based on the distance data obtained from the distance measuring devices 12101 to 12104. Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of automatic driving, which travels autonomously without relying on driver operation.

[0200] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance data obtained from the distance measuring devices 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the degree of risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drivetrain control unit 12010.

[0201] An example of a mobile object control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to the distance measurement device 12031 in the above-described configuration.

[0202] The specific numerical values, shapes, materials (including compositions) and the like described in this specification are merely examples and are not intended to limit the invention.

[0203] The present technology can also be configured as follows. (1) a first structure including a first multilayer reflector; a second structure including a second multilayer mirror; a resonator including an active layer disposed between the first and second structures; Equipped with a junction is present in at least one of the first structure, the second structure, the resonator, between the resonator and the first structure, and between the resonator and the second structure; A surface-emitting laser, wherein a first confinement section that confines current is provided in at least one of a first component section on one side of the junction and a second component section on the other side, and a second confinement section that confines at least light out of current and light is provided in at least one of the first and second components. (2) The surface-emitting laser according to (1), wherein the first and second confinement sections are provided in one of the first and second component sections. (3) The surface-emitting laser according to (1), wherein the first confinement section is provided in one of the first and second components, and the second confinement section is provided in the other. (4) A surface-emitting laser according to any one of (1) to (3), wherein the second confinement section is provided on a first bonding surface, which is a bonding surface between the first component and the second component, and / or a second bonding surface, which is a bonding surface between the second component and the first component. (5) A surface-emitting laser according to any one of (1) to (4), wherein the first confinement section is provided in a region of the first component that does not include a first bonding surface, which is a bonding surface between the first component and the second component, and / or a region of the second component that does not include a second bonding surface, which is a bonding surface between the second component and the first component. (6) A surface-emitting laser according to any one of (1) to (4), wherein the first confinement section is provided in a region of the first component including a first bonding surface, which is a bonding surface of the first component with the second component, and / or a region of the second component including a second bonding surface, which is a bonding surface of the second component with the first component. (7) A surface-emitting laser according to any one of (1) to (3), wherein the second confinement section is provided at a first bonding surface, which is a bonding surface of the first component with the second component, and / or a second bonding surface, which is a bonding surface of the second component with the first component, and the first confinement section is provided in a region of the first component that does not include the first bonding surface, which is a bonding surface of the first component with the second component, and / or a region of the second component that does not include the second bonding surface, which is a bonding surface of the second component with the first component. (8) A surface-emitting laser according to any one of (1) to (3), wherein the second confinement section is provided at a first bonding surface, which is a bonding surface of the first component with the second component, and / or a second bonding surface, which is a bonding surface of the second component with the first component, and the first confinement section is provided in a region of the first component including the first bonding surface, which is a bonding surface of the first component with the second component, and / or a region of the second component including the second bonding surface, which is a bonding surface of the second component with the first component. (9) A surface-emitting laser according to any one of (1) to (8), wherein the cavity further includes first and second clad layers arranged on either side of the active layer, and the junction is present inside at least one of the first and second clad layers. (10) The surface-emitting laser according to (4), wherein the second confinement portion is a layer present in a circularly shaped recess provided on at least one of the first and second bonding surfaces. (11) The surface-emitting laser according to (10), wherein the layer is a low-refractive index layer having a refractive index lower than that of the portion of the first component and / or the second component inside the recess. (12) The surface-emitting laser according to (11), wherein the low refractive index layer has semi-insulating or insulating properties. (13) The surface-emitting laser according to any one of (10) to (12), wherein the layer has semi-insulating or insulating properties. (14) The surface-emitting laser according to any one of (10) to (13), wherein the cross section of the recess has a shape that becomes shallower toward the at least one portion of the central portion. (15) The surface-emitting laser according to any one of (1) to (14), wherein the first confinement portion has a higher electrical resistance than the portion surrounded by the first confinement portion. (16) The surface-emitting laser according to (15), wherein the first confinement section is a layer into which ions are implanted. (17) The surface-emitting laser according to any one of (1) to (14), wherein the first confinement portion and the portion surrounded by the first confinement portion are made of a compound semiconductor, and the first confinement portion has a larger band gap than the portion surrounded by the first confinement portion. (18) The surface-emitting laser according to any one of (1) to (14), wherein the first confinement portion is a layer in which an impurity is diffused. (19) The surface-emitting laser according to any one of (1) to (14), wherein the first confinement section is a layer into which ions are implanted and impurities are diffused. (20) The surface-emitting laser according to (17), wherein the first confinement portion is a layer into which ions are implanted and / or impurities are diffused. (21) A surface-emitting laser array including a plurality of surface-emitting lasers according to any one of (1) to (20). (22) An electronic device comprising the surface-emitting laser according to any one of (1) to (20). (23) laminating a first structure including a first multilayer film reflector and a first portion of a resonator on a first substrate in this order to generate a first laminate; generating a second laminate; bonding the first and second laminates; Including, In the step of producing the second laminate, a second structure including a second multilayer film reflector and a second portion of the resonator are laminated in this order on a second substrate; performing at least one of ion implantation, vacancy diffusion, and impurity diffusion on the second portion to form a frame-shaped current confinement portion; stacking a third portion of the resonator on the second portion of the resonator; forming a frame-shaped recess in the third portion of the resonator; In the bonding step, the third portion of the resonator in the second laminate is bonded to the first portion of the resonator in the first laminate. (24) A method for manufacturing a surface-emitting laser according to (23), wherein in the step of generating the first stack, after stacking the first structure on the first substrate and before stacking the first part of the resonator on the first structure, at least one of ion implantation, vacancy diffusion, and impurity diffusion is performed on the first structure to form a frame-shaped current confinement portion. (25) A method for manufacturing a surface-emitting laser according to (23) or (24), wherein in the step of generating the first stack, the first structure is stacked on the first substrate, the first portion of the resonator is stacked on the first structure, and then at least one of ion implantation, vacancy diffusion, and impurity diffusion is performed on the first portion to form a frame-shaped current confinement portion. (26) A method for manufacturing a surface-emitting laser according to any one of (23) to (25), wherein in the step of generating the first stack, a frame-shaped recess is formed in the first structure after stacking the first structure on the first substrate and before stacking the first part of the resonator on the first structure. (27) A method for manufacturing a surface-emitting laser according to any one of (23) to (26), wherein in the step of generating the first stack, the first structure is stacked on the first substrate, the first portion of the resonator is stacked on the first structure, and then at least one of ion implantation, vacancy diffusion, and impurity diffusion is performed on the first portion to form a frame-shaped current confinement portion. (28) A method for manufacturing a surface-emitting laser according to any one of (23) to (26), wherein in the step of generating the second stack, after stacking the second structure on the second substrate and before stacking the second part of the resonator on the second structure, at least one of ion implantation, vacancy diffusion, and impurity diffusion is performed on the second structure to form a frame-shaped current confinement portion. (29) A method for manufacturing a surface-emitting laser according to any one of (23) to (28), wherein in the step of generating the second stack, the second structure is stacked on the second substrate, the second portion of the resonator is stacked on the second structure, and then at least one of ion implantation, vacancy diffusion, and impurity diffusion is performed on the second portion to form a frame-shaped current confinement portion. (30) A method for manufacturing a surface-emitting laser according to any one of (23) to (29), wherein in the step of generating the second stack, a frame-shaped recess is formed in the second structure after stacking the second structure on the second substrate and before stacking the second part of the resonator on the second structure. (31) A method for manufacturing a surface-emitting laser according to any one of (23) to (30), wherein in the step of generating the second stack, the second structure is stacked on the second substrate, the second part of the resonator is stacked on the second structure, and then a frame-shaped recess is formed in the second part. (32) The method for manufacturing a surface-emitting laser according to any one of (23) to (31), further comprising the step of performing at least one of ion implantation, vacancy diffusion, and impurity diffusion on the first stack and / or the second stack after the bonding step to form a frame-shaped current confinement portion. (33) forming a first laminate by stacking a first structure including a first multilayer film reflector and a first portion of a resonator on a first substrate in this order; generating a second laminate; bonding the first and second laminates; Including, In the step of producing the second laminate, a second structure including a second multilayer film reflector and a second portion of the resonator are laminated in this order on a second substrate, and a frame-shaped recess is formed in the two portions; In the bonding step, the second portion of the resonator in the second laminate is bonded to the first portion of the resonator in the first laminate. (34) The method for manufacturing a surface-emitting laser according to (33), wherein in the step of generating the second stack, after forming the recess and before the step of bonding, at least one of ion implantation, vacancy diffusion, and impurity diffusion is performed on the second portion to form a frame-shaped current confinement portion. (35) A method for manufacturing a surface-emitting laser according to (33) or (34), wherein in the step of generating the second stack, after stacking a second structure including a second multilayer film reflector and a second portion of the resonator in this order on the second substrate, and before forming the recess, at least one of ion implantation, vacancy diffusion, and impurity diffusion is performed on the second portion to form a frame-shaped current confinement portion. (36) A method for manufacturing a surface-emitting laser according to any one of (33) to (35), wherein in the step of generating the first stack, after stacking the first structure on the first substrate and before stacking the first part of the resonator on the first structure, at least one of ion implantation, vacancy diffusion, and impurity diffusion is performed on the first structure to form a frame-shaped current confinement portion. (37) A method for manufacturing a surface-emitting laser according to any one of (33) to (36), wherein in the step of generating the first stack, a frame-shaped recess is formed in the first structure after stacking the first structure on the first substrate and before stacking the first part of the resonator on the first structure. (38) A method for manufacturing a surface-emitting laser according to any one of (33) to (37), wherein in the step of generating the first stack, the first structure is stacked on the first substrate, the first portion of the resonator is stacked on the first structure, and then at least one of ion implantation, vacancy diffusion, and impurity diffusion is performed on the first portion to form a frame-shaped current confinement portion. (39) A method for manufacturing a surface-emitting laser according to any one of (33) to (38), wherein in the step of generating the first laminate, the first structure is laminated on the first substrate, and the first part of the resonator is laminated on the first structure, and then a frame-shaped recess is formed in the first part. (40) A method for manufacturing a surface-emitting laser according to any one of (33) to (39), wherein in the step of generating the second stack, after stacking the second structure on the second substrate and before stacking the second part of the resonator on the second structure, at least one of ion implantation, vacancy diffusion, and impurity diffusion is performed on the second structure to form a frame-shaped current confinement portion. (41) A method for manufacturing a surface-emitting laser according to any one of (33) to (40), wherein in the step of generating the second stack, a frame-shaped recess is formed in the second structure after stacking the second structure on the second substrate and before stacking the second part of the resonator on the second structure. (42) A method for manufacturing a surface-emitting laser according to any one of (33) to (41), wherein in the step of generating the second stack, the second structure is stacked on the second substrate, the second portion of the resonator is stacked on the second structure, and then at least one of ion implantation, vacancy diffusion, and impurity diffusion is performed on the second portion to form a frame-shaped current confinement portion. (43) A method for manufacturing a surface-emitting laser according to any one of (33) to (42), wherein in the step of generating the second stack, the second structure is stacked on the second substrate, the second part of the resonator is stacked on the second structure, and then a frame-shaped recess is formed in the second part. (44) The method for manufacturing a surface-emitting laser according to any one of (33) to (43), further comprising the step of performing at least one of ion implantation, vacancy diffusion, and impurity diffusion on the first stack and / or the second stack after the bonding step to form a frame-shaped current confinement portion. (45) A step of laminating a first structure including a first multilayer film reflector and a first portion of a resonator on a first substrate to generate a first laminate; generating a second laminate; bonding the first and second laminates; Including, In the step of producing the second laminate, a second structure including a second multilayer film reflector and a second portion of the resonator are laminated on a second substrate; performing at least one of ion implantation, vacancy diffusion, and impurity diffusion on the second portion of the resonator to form a frame-shaped current confinement portion; In the bonding step, the second portion of the resonator in the second laminate is bonded to the first portion of the resonator in the first laminate. (46) A method for manufacturing a surface-emitting laser according to (45), wherein in the step of generating the second stack, a frame-shaped recess is formed in the second portion after forming the frame-shaped current confinement portion and before the joining step. (47) A method for manufacturing a surface-emitting laser according to (45) or (46), wherein in the step of generating the second stack, a second structure including a second multilayer film reflector and a second portion of the resonator are stacked in this order on the second substrate, and a frame-shaped recess is formed in the second portion before the frame-shaped current confinement portion is formed. (48) A method for manufacturing a surface-emitting laser according to any one of (45) to (47), wherein in the step of generating the first stack, after stacking the first structure on the first substrate and before stacking the first part of the resonator on the first structure, at least one of ion implantation, vacancy diffusion, and impurity diffusion is performed on the first structure to form a frame-shaped current confinement portion. (49) A method for manufacturing a surface-emitting laser according to any one of (45) to (48), wherein in the step of generating the first stack, a frame-shaped recess is formed in the first structure after stacking the first structure on the first substrate and before stacking the first part of the resonator on the first structure. (50) A method for manufacturing a surface-emitting laser according to any one of (45) to (49), wherein in the step of generating the first stack, the first structure is stacked on the first substrate, the first portion of the resonator is stacked on the first structure, and then at least one of ion implantation, vacancy diffusion, and impurity diffusion is performed on the first portion to form a frame-shaped current confinement portion. (51) A method for manufacturing a surface-emitting laser according to any one of (45) to (50), wherein in the step of generating the first stack, the first structure is stacked on the first substrate, the first part of the resonator is stacked on the first structure, and then a frame-shaped recess is formed in the first part. (52) The method for manufacturing a surface-emitting laser according to any one of (45) to (51), wherein, in the step of producing the second laminate, after laminating the second structure on the second substrate and before laminating the second part of the resonator on the second structure, at least one of ion implantation, vacancy diffusion, and impurity diffusion is performed on the second structure to form a frame-shaped current confinement portion. (53) The method for manufacturing a surface-emitting laser according to any one of (45) to (52), wherein, in the step of producing the second laminate, after laminating the second structure on the second substrate and before laminating the second part of the resonator on the second structure, a frame-shaped recess is formed in the second structure. (54) A method for manufacturing a surface-emitting laser according to any one of (45) to (53), wherein in the step of generating the second stack, the second structure is stacked on the second substrate, the second portion of the resonator is stacked on the second structure, and then at least one of ion implantation, vacancy diffusion, and impurity diffusion is performed on the second portion to form a frame-shaped current confinement portion. (55) A method for manufacturing a surface-emitting laser according to any one of (45) to (54), wherein in the step of generating the second stack, the second structure is stacked on the second substrate, the second part of the resonator is stacked on the second structure, and then a frame-shaped recess is formed in the second part. (56) A method for manufacturing a surface-emitting laser according to any one of (45) to (55), further comprising the step of performing at least one of ion implantation, vacancy diffusion, and impurity diffusion on the first stack and / or the second stack after the bonding step to form a frame-shaped current confinement portion. (57) A method for manufacturing a surface-emitting laser according to any one of (45) to (56), further comprising the step of performing at least one of ion implantation, vacancy diffusion, and impurity diffusion on the first stack and / or the second stack after the bonding step to form a frame-shaped current confinement portion. [Explanation of symbols]

[0204] 100, 100-1 to 100-15, 200, 300, 400, 400-1 to 400-4: surface-emitting laser, 101: substrate, 102: first multilayer reflector, 103: first cladding layer, 103a: first component layer (at least a part of the first component), 103b: second component layer (at least a part of the second component), 103b1, 103a1, 103c, 102a, 105a, 106a: recess, 104: active layer, 105: second cladding layer, 106: second multilayer reflector, C1: first confinement section, C2: second confinement section, R: resonator, S1: first structure, S2: second structure, J: junction, JS1: first junction surface, JS2: second junction surface, 1000: distance measuring device (electronic device).

Claims

1. a first structure including a first multilayer reflector; a second structure including a second multilayer mirror; a resonator including an active layer disposed between the first and second structures; Equipped with a junction is present in at least one of the first structure, the second structure, the resonator, between the resonator and the first structure, and between the resonator and the second structure; a first confinement section for confining a current is provided in at least one of a first component section on one side of the junction and a second component section on the other side, and a second confinement section for confining at least light out of current and light is provided in at least one of the first and second components; the resonator further includes first and second clad layers disposed at positions sandwiching the active layer; The junction is present inside at least one of the first and second cladding layers.

2. a first structure including a first multilayer reflector; a second structure including a second multilayer mirror; a resonator including an active layer disposed between the first and second structures; Equipped with a junction is present in at least one of the first structure, the second structure, the resonator, between the resonator and the first structure, and between the resonator and the second structure; a first confinement section for confining a current is provided in at least one of a first component section on one side of the junction and a second component section on the other side, and a second confinement section for confining at least light out of current and light is provided in at least one of the first and second components; the second confinement portion is provided on a first bonding surface which is a bonding surface of the first component portion with the second component portion and / or a second bonding surface which is a bonding surface of the second component portion with the first component portion, the second confinement portion is a layer present in a circularly shaped recess provided on at least one of the first and second bonding surfaces, A surface-emitting laser, wherein the cross section of the recess has a shape that becomes shallower as it approaches the at least part of the central portion.

3. a first structure including a first multilayer reflector; a second structure including a second multilayer mirror; a resonator including an active layer disposed between the first and second structures; Equipped with a junction is present in at least one of the first structure, the second structure, the resonator, between the resonator and the first structure, and between the resonator and the second structure; a first confinement section for confining a current is provided in at least one of a first component section on one side of the junction and a second component section on the other side, and a second confinement section for confining at least light out of current and light is provided in at least one of the first and second components; the first confinement portion and the portion surrounded by the first confinement portion are made of a compound semiconductor, A surface-emitting laser, wherein the first confinement portion has a larger band gap than the portion surrounded by the first confinement portion.

4. a first structure including a first multilayer reflector; a second structure including a second multilayer mirror; a resonator including an active layer disposed between the first and second structures; Equipped with a junction is present in at least one of the first structure, the second structure, the resonator, between the resonator and the first structure, and between the resonator and the second structure; a first confinement section for confining a current is provided in at least one of a first component section on one side of the junction and a second component section on the other side, and a second confinement section for confining at least light out of current and light is provided in at least one of the first and second components; The surface-emitting laser, wherein the first confinement portion is a layer in which an impurity is diffused.

5. a first structure including a first multilayer reflector; a second structure including a second multilayer mirror; a resonator including an active layer disposed between the first and second structures; Equipped with a junction is present in at least one of the first structure, the second structure, the resonator, between the resonator and the first structure, and between the resonator and the second structure; a first confinement section for confining a current is provided in at least one of a first component section on one side of the junction and a second component section on the other side, and a second confinement section for confining at least light out of current and light is provided in at least one of the first and second components; The surface-emitting laser, wherein the first confinement portion is a layer into which ions are implanted and impurities are diffused.

6. 6. The surface-emitting laser according to claim 1, wherein one of the first and second components is provided with the first and second confinement sections.

7. 6. The surface-emitting laser according to claim 1, wherein the first confinement portion is provided in one of the first and second components, and the second confinement portion is provided in the other.

8. 8. The surface-emitting laser according to claim 1, wherein the second confinement section is provided on a first bonding surface that is a bonding surface of the first component with the second component and / or a second bonding surface that is a bonding surface of the second component with the first component.

9. 9. The surface-emitting laser according to claim 1, wherein the first confinement section is provided in a region of the first component that does not include a first bonding surface that is a bonding surface of the first component with the second component and / or a region of the second component that does not include a second bonding surface that is a bonding surface of the second component with the first component.

10. 9. The surface-emitting laser according to claim 1, wherein the first confinement section is provided in a region of the first component including a first bonding surface that is a bonding surface of the first component with the second component and / or a region of the second component including a second bonding surface that is a bonding surface of the second component with the first component.

11. the second confinement portion is provided on a first bonding surface which is a bonding surface between the first component and the second component and / or a second bonding surface which is a bonding surface between the second component and the first component, 8. The surface-emitting laser according to claim 1, wherein the first confinement section is provided in a region of the first component that does not include a first bonding surface that is a bonding surface of the first component with the second component and / or a region of the second component that does not include a second bonding surface that is a bonding surface of the second component with the first component.

12. the second confinement portion is provided on a first bonding surface which is a bonding surface between the first component and the second component and / or a second bonding surface which is a bonding surface between the second component and the first component, 8. The surface-emitting laser according to claim 1, wherein the first confinement section is provided in a region of the first component including a first bonding surface that is a bonding surface of the first component with the second component and / or a region of the second component including a second bonding surface that is a bonding surface of the second component with the first component.

13. 9. The surface-emitting laser according to claim 8, wherein the second confinement portion is a layer present in a circularly shaped recess provided on at least one of the first and second bonding surfaces.

14. 14. The surface-emitting laser according to claim 13, wherein the layer is a low-refractive index layer having a refractive index lower than that of the portion of the first component portion and / or the second component portion inside the recess.

15. 15. The surface-emitting laser according to claim 14, wherein the low refractive index layer has semi-insulating or insulating properties.

16. 16. The surface-emitting laser according to claim 13, wherein the layer has semi-insulating or insulating properties.

17. 17. The surface-emitting laser according to claim 1, wherein the first confinement portion has a higher electrical resistance than a portion surrounded by the first confinement portion.

18. 18. The surface-emitting laser of claim 17, wherein the first confinement portion is an ion-implanted layer.

19. 4. The surface-emitting laser according to claim 3, wherein the first confinement portion is a layer into which ions are implanted and / or impurities are diffused.

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