Light-emitting device

Abstract

To provide a light emitting device mounted accurately.SOLUTION: A light emitting device includes: a semiconductor laser element; a first alignment mark; a second alignment mark; a third alignment mark; a fourth alignment mark; a base having an arrangement surface on which the semiconductor laser element is disposed; and a lid member joined to the base and forming a closed space in which the semiconductor laser element is disposed. The first alignment mark and the second alignment mark are provided outside the closed space, and the third alignment mark and the fourth alignment mark are provided inside the closed space. A straight line connecting the first alignment mark with the second alignment mark is parallel to a straight line connecting the third alignment mark with the fourth alignment mark.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a light emitting device. [Background technology]

[0002] Conventionally, when mounting components such as light-emitting elements on a mounting surface, alignment marks are used. For example, a method is known in which a semiconductor device is mounted based on the alignment marks. In the document 1, a sub-machine having an alignment mark formed on the first surface on which a semiconductor light emitting element is attached is described. The account has been disclosed. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2012-164737 Summary of the Invention [Problem to be solved by the invention]

[0004] Patent Document 1 describes a method for improving the mounting accuracy of a single semiconductor light emitting element as a component to be mounted on a mounting surface. However, when multiple components are mounted on one mounting surface to form an optical system, When doing so, it is necessary to devise ways to improve mounting accuracy from a comprehensive perspective. [Means for solving the problem]

[0005] The method for manufacturing a light emitting device disclosed in the present specification includes: The end surface is obtained based on a plurality of alignment marks provided on a base having a placement surface. placing the first semiconductor laser element on the placement surface so as to be parallel to a first straight line; , obtained based on a predetermined area of ​​the first light reflecting member, when the first light reflecting member is arranged The reference line that is the reference for the alignment is parallel to the second line obtained by rotating the first line by a predetermined angle. and arranging the first light reflecting members on the arrangement surface so as to form rows.

[0006] The light emitting device disclosed in the present specification has an arrangement surface and a plurality of alignment marks. a base portion provided with a workpiece, a semiconductor laser element to be placed on the placement surface, and a semiconductor laser element to be placed on the placement surface. and a light reflecting member disposed on the semiconductor laser element, the light reflecting member being , the light emitting end face of the semiconductor laser element and the upper end or lower end of the light reflecting surface of the light reflecting member and are arranged on the arrangement surface so that they form a predetermined angle other than perpendicular and parallel, The straight line connecting the alignment marks and the light emitting end face of the semiconductor laser element are parallel to each other. do.

[0007] The base disclosed in this specification has a bottom surface and a rectangular shape surrounding the bottom surface when viewed from above. a top surface forming a frame of the rectangular frame, and a top surface of the rectangular frame that is connected to a first side of the four sides forming the frame of the rectangular frame. a first metal film provided across a region corresponding to the first side and a region corresponding to a second side intersecting the first side; a region from a third side facing the first side to a fourth side intersecting the third side a second metal film provided over the first side; a first conductive region for electrical connection to the second side of the alignment mark; a first alignment region for applying an electric current to the second metal film in a region related to the third side; A second conductive region for electrical connection is provided in the region relating to the fourth side for an alignment mark. A second alignment region is provided. [Effects of the Invention]

[0008] According to the invention disclosed in the present specification, a light emitting device can be mounted with high precision. Alternatively, a light emitting device that can be mounted with high precision is realized. A base for mounting the device is provided. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a perspective view of the light emitting device according to the first embodiment. [Figure 2] FIG. 2 is a top view corresponding to FIG. [Figure 3] FIG. 3 is a cross-sectional view of the light emitting device taken along line III-III in FIG. [Figure 4] FIG. 4 is a perspective view illustrating the internal structure of the light emitting device according to the first embodiment. [Figure 5] FIG. 5 is a top view corresponding to FIG. [Figure 6] FIG. 6 is a perspective view illustrating the internal structure of the light emitting device according to the first embodiment. [Figure 7] FIG. 7 is a top view corresponding to FIG. [Figure 8] FIG. 8 is an enlarged top view of the bottom surface (arrangement surface) of the base portion in FIG. [Figure 9] FIG. 9 is a perspective view of a state in which the light-transmitting member and the wavelength converting member according to the first embodiment are joined together. [Figure 10] FIG. 10 is a top view corresponding to FIG. [Figure 11] FIG. 11 is a top view showing the wavelength conversion member through which the wavelength conversion member is seen in order to explain the joint surface between the light-transmitting member and the wavelength conversion member according to the first embodiment. [Figure 12] FIG. 12 is a bottom view of the wavelength conversion member according to the first embodiment. [Figure 13] FIG. 13 is a perspective view of the light emitting device according to the second embodiment. [Figure 14] FIG. 14 is a top view corresponding to FIG. [Figure 15]FIG. 15 is a perspective view illustrating the internal structure of the light emitting device according to the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] In this specification or claims, polygons such as triangles and quadrilaterals are referred to as polygons. Polygons and shapes that have been processed with rounded corners, chamfered corners, rounded edges, etc. In addition, the shape that has been processed not only at the corners (edges) but also at the middle part of the edge is also called In other words, a shape that has been processed based on a polygon is called a polygon. This is intended to be included within the interpretation of "polygon" as used in this specification and claims.

[0011] This also applies to words that represent specific shapes, such as trapezoids, circles, and irregular shapes, not just polygons. The same is true when dealing with each edge that forms the shape. Even if the corners or middle parts are processed, the interpretation of "side" includes the processed parts. In addition, we distinguish "polygons" and "edges" that have not been intentionally processed from processed shapes. In this case, the word "strict" should be added, for example, "strict rectangle."

[0012] In addition, in the present specification or claims, regarding a certain component, When there are multiple things and you want to distinguish between them, you can use the words "first," " In this case, the distinction between the present specification and the claims will be made. If the subject matter or viewpoints are different, the embodiments described in this specification and the scope of the claims may be different. The format of the appendix may not match the format of the appendix.

[0013] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The embodiments embody the technical idea of ​​the present invention, but do not limit the present invention. In the following description, the same names and symbols refer to the same or similar components. The size of the components shown in each drawing may be omitted. The sheath and relative positions may be exaggerated for clarity.

[0014] First Embodiment 1 is a perspective view of a light emitting device 1 according to a first embodiment. 2. Fig. 3 is a top view of the device 1. Fig. 3 is a cross-sectional view of the light emitting device 1 taken along line III-III in Fig. 2. FIG. 4 is a perspective view of the light emitting device 1 with the light blocking member 100 removed to explain the internal structure. FIG. 5 is a top view in the same state as FIG. 4. FIG. 6 is a diagram illustrating the internal structure. 1 is a perspective view of the light emitting device 1 from which the light-transmitting member and the wavelength conversion member have been removed for clarity. 7 is a top view in the same state as in FIG. 6. FIG. 8 is a top view in the same state as in FIG. 8 is an enlarged top view of the area of ​​the semiconductor laser element 20 (arrangement surface). In order to make it easier to understand the positional relationship with the light reflecting member 40, some components are omitted. FIG. 9 is a perspective view showing a state in which the light-transmitting member 80 and the wavelength converting member 90 are joined together. 10 is a top view in the same state as in FIG. 9. FIG. 11 is a top view of the light-transmitting member 80 and the wavelength conversion element 81. 12 is a top view showing the wavelength conversion member 90 in order to explain the bonding surface with the member 90. 2 is a bottom view of the wavelength conversion member 90 according to the first embodiment. FIG.

[0015] The light emitting device 1 includes, as its components, a base 10, two semiconductor laser elements 20, and two sub- A mount 30, two light reflecting members 40, a protection element 50, a temperature measuring element 60, wiring 70, a transparent The optical element 80 includes a wavelength conversion member 90 and a light blocking member 100 .

[0016] The base 10 has a concave shape that is recessed from the top surface to the bottom surface. The recess is formed inside this outer shape. The base 10 has an upper surface 11, a bottom surface 12, and a lower surface 13. 3. A space having an inner surface 14 and an outer surface 15, the inner surface 14 and the bottom surface 12 being recessed In addition, when viewed from above, a rectangular outer shape is formed by the outer surface 15 intersecting with the upper surface 11. When viewed from above, a rectangular frame is formed by the inner surface 14 intersecting with the upper surface 11, and a recessed space is formed. The space is surrounded by this frame.

[0017] The four sides (outer surface 15 in top view) that form the outer shape of the rectangle are the four sides ( It is parallel to the closest side of the inner surface 14) when viewed from above. The distance may refer to the distance between the midpoints of the sides. The parallel relationship is established when the distance between the points is the smallest between the sides of the outline and the frame. Stand. Parallel here includes a difference of 5 degrees or less.

[0018] The base 10 also forms two step portions 16 on the inside of the frame. 6 refers to the part consisting of the top surface and the side surface that intersects with this top surface and extends downward. Therefore, the inner surface 14 of the base 10 has a side surface that intersects with the upper surface 11 of the base 10 and a side surface of the step portion. The surface is configured to include a surface.

[0019] Here, the two step portions 16 are, from the side closest to the bottom surface 12, a first step portion 161 and a second step portion 162. 162. In addition, the base 10 does not have two step portions 16. For example, the number of step portions 16 may be one.

[0020] The intersections between the surfaces can be identified from the drawings. For example, the outer surface 15 is It can be said that the upper surface 11 and the lower surface 13 intersect with each other. The side surface of the second step portion 162 extends upward from the upper surface of the It can be said that it intersects with the side surface that intersects with the upper surface 11 in part. The same is true.

[0021] The base 10 can be formed mainly from ceramic. Examples of usable materials include aluminum nitride, silicon nitride, aluminum oxide, and silicon carbide. It should be noted that the main material is not limited to ceramic, and other insulating materials may also be used. good.

[0022] The base 10 is provided with a plurality of metal films 17. The upper surface 11 of the base 10 is provided with six metal films 17. The metal film 171 is formed on the bottom surface 12, five metal films 172 are formed on the top surface of the second step portion 162, and two metal films 173 are formed on the top surface of the second step portion 162. The metal film 173 is provided. In addition, the four metal films 172 on the bottom surface 12 and the second stage The two metal films 173 on the upper surface of the difference part 162 are each a metal film passing through the inside of the base part 10. The first metal film 171 is connected to one of the six metal films 171 provided on the upper surface 11. A metal film is also provided on the upper surface of the step portion 161 .

[0023] On the upper surface 11, three metal films 171 are arranged in an area corresponding to one side when viewed from above. The area relating to one side is the area between one side of the outline and one side of the frame that are in the closest relationship as described above. The area between two sides is the area that connects any point on one side to any point on the other side. The upper surface 11 has two opposing sides. Three metal films 171 are arranged in each of the areas. All will be placed.

[0024] Here, the region on one side where the three metal films 171 are arranged is called the first region 111, The area on one side of the two sides intersecting with the area 111 is called the second area 112, and the three The region on the other side where the metal film 171 is arranged is the third region 113, and the region intersecting the third region 113 is the third region 113. The area of ​​the two divided sides that is not the second area is called the fourth area 114. In Figure 2, these areas are indicated by hatching.

[0025] One of the three metal films 171 provided in the first region 111 is The metal films 171 are provided over the second region 112. One of them is provided across the third region 113 and the fourth region 114.

[0026] The metal film 171 extending over the second region 112 is a metal film having an alignment mark 1 in the second region 112. The metal film 171 extending over the fourth region 114 forms an alignment film 8 in the fourth region 114. In this example, the alignment mark 18 is formed in the second region 112. 18 indicates the first alignment mark 181, and the alignment mark provided in the fourth region 114. 18 will be referred to as the second alignment mark 182.

[0027] The alignment mark 18 is not connected to any of the three metal films 171 arranged side by side. It does not have to be connected. In other words, the alignment marks are formed separately from the three metal films 171. The alignment mark may be formed by a method other than providing a metal film. .

[0028] The first alignment mark 181 is aligned along the side (inner side) of the frame in the first region 111 in a top view. A straight line including the side surface 14) and a side (inside) of the frame in the second region 112 that is parallel to this straight line The second alignment mark 182 is provided between the line passing through the midpoint CP of the surface 14. , in top view, a straight line including a side (inner surface 14) relating to the frame in the third region 113, and this straight line a straight line parallel to the line 111 and passing through the midpoint CP of the side (inner surface 14) relating to the frame in the fourth region 114; It is set up between.

[0029] A straight line connecting the first alignment mark 181 and the second alignment mark 182 in a top view is not perpendicular or parallel to any of the four sides that form the outline of the base 10. It is not perpendicular or parallel to any of the four sides. That is, with respect to any of the four sides forming the outline or frame of the base 10, It is a diagonal straight line.

[0030] Two alignment marks 18 are formed on the bottom surface 12 of the base 10. The alignment marks 18 are formed one by one at 172. are referred to as the third alignment mark 183 and the fourth alignment mark 184, respectively. Let's say.

[0031] A straight line connecting the third alignment mark 183 and the fourth alignment mark 184 in a top view is not perpendicular or parallel to any of the four sides that form the outline of the base 10. It is not perpendicular or parallel to any of the four sides. The first alignment mark 181 and the second alignment mark 18 The line connecting the two points overlaps. Here, overlapping means that the intersection point is the axis and includes a deviation of 4 degrees or less. do.

[0032] The area (place) and number of the metal film 17 are not limited to the above. For example, the number of metal films provided on the upper surface 11 may be changed. Alternatively, two or one metal film may be provided in each of the regions. A plurality of metal films are formed on the bottom surface 12 of the base 10, the top surface of the second step portion 162, and the top surface 11 of the base 10. It can be said that the following has been established.

[0033] The semiconductor laser element 20 has a rectangular shape when viewed from above. The side surface intersecting with one of the sides is the light emitting end surface 21 from which the light is emitted from the semiconductor laser element 20. Moreover, the upper and lower surfaces of the semiconductor laser element 20 have areas larger than that of the light-emitting end surface 21. .

[0034] The light (laser light) emitted from the semiconductor laser element has a divergence, and the light emitting end face An elliptical far-field pattern (hereinafter referred to as "FFP") is formed on a plane parallel to the Here, FFP refers to the shape and intensity of the emitted light at a position away from the output end face. The distribution is shown.

[0035] The FFP shape of the light emitted from the semiconductor laser element 20 is determined by the number of semiconductor layers including the active layer. The layer direction is longer than the layer direction, which is perpendicular to the layer direction. This layer direction is called FF. The horizontal direction of P and the stacking direction are referred to as the vertical direction of FFP.

[0036] Furthermore, based on the light intensity distribution of the FFP of the semiconductor laser element 20, 1 / e 2 The light having the above intensity is called the main part of the light. The angle corresponding to the full width at half maximum of the fabric is called the divergence angle. The horizontal divergence angle of the FFP is called the horizontal divergence angle. This is called the angle of inclination.

[0037] The semiconductor laser element 20 is, for example, a semiconductor laser element that emits blue light. Here, the blue light has an emission peak wavelength in the range of 420 nm to 494 nm. The blue light-emitting semiconductor laser element is a nitride semiconductor. Examples of nitride semiconductors include GaN, In, and GaN and AlGaN can be used.

[0038] The submount 30 is configured in the shape of a rectangular parallelepiped and has a bottom surface, a top surface, and side surfaces. In addition, the submount 30 has the smallest width in the vertical direction. The shape is not limited to a rectangular parallelepiped. The submount 30 is made of, for example, silicon nitride, aluminum nitride, or silicon carbide. It should be noted that other materials may also be used. A metal membrane is provided.

[0039] The light reflecting member 40 has two light reflecting surfaces 41 that reflect light. A surface is provided that has a light reflectance of 99% or more for the peak wavelength of the irradiated light. The light reflectance at the surface can be less than or equal to 100%.

[0040] The two light reflecting surfaces 41 are planar and inclined relative to the lower surface. In other words, the two light reflecting surfaces 41 are vertically positioned when viewed from below. The two light reflecting surfaces 41 are not parallel to each other. Forms a projection field.

[0041] Here, the light reflecting surface closer to the bottom surface is referred to as the first reflecting surface 411, and the light reflecting surface further away is referred to as the second reflecting surface 412. In the light reflecting member 40, the inclination angle of the second reflecting surface 412 is larger than that of the first reflecting surface 412. For example, the angle of inclination of the first reflecting surface 411 and the second reflecting surface 412 is larger than the angle of inclination of the first reflecting surface 411. The difference in the tilt angle ranges from 10 degrees to 60 degrees.

[0042] It should be noted that the light reflecting surface 41 may have three or more light reflecting surfaces 41 that form one integral reflecting area. Also, one light reflecting surface 41 may form one reflecting area. The light reflecting surface 41 may have a flat shape. It may have a curved shape.

[0043] The light reflecting member 40 may be made of glass, metal, or the like as the main material forming its outer shape. The main material should be heat-resistant, such as quartz or BK7 (borosilicate glass). Glass, metal such as aluminum, or Si can be used. For example, metals such as Ag and Al, Ta2O5 / SiO2, TiO2 / SiO2, Nb2O5 / It can be formed using a dielectric multilayer film such as SiO2.

[0044] The protection element 50 protects a specific element (for example, a semiconductor laser element) from damage caused by excessive current flowing therethrough. The protective element 50 is made of, for example, Si. A Zener diode having a high resistance can be used.

[0045] The temperature measuring element 60 is an element used as a temperature sensor for measuring the ambient temperature. The temperature measuring element 60 may be, for example, a thermistor.

[0046] The wiring 70 is used to electrically connect a specific element (for example, a semiconductor laser element). The wire 70 may be, for example, a metal wire.

[0047] The light-transmitting member 80 is configured in the shape of a rectangular parallelepiped flat plate, and has a bottom surface, a top surface, and side surfaces. The light-transmitting member has a light-transmitting property that transmits light. Here, the light-transmitting property means a light transmittance of The ratio must be 80% or more. The shape is not limited to a rectangular parallelepiped.

[0048] The light-transmitting member 80 can be formed using sapphire as the main material. It is a material with a relatively high refractive index and relatively high strength. Other materials that can be used include, for example, quartz, silicon carbide, or glass.

[0049] Two metal films are provided on the upper surface of the light-transmitting member 80. On both the upper and lower surfaces, the metal film is provided in the peripheral region. Therefore, the light-transmitting member 80 has a light-transmitting area when viewed from above or below. The light-transmitting area is provided in the center. do.

[0050] The wavelength conversion member 90 is formed in a rectangular parallelepiped flat plate shape and has a bottom surface, a top surface, and side surfaces. The wavelength converting member 90 includes a light-transmitting wavelength converting portion 91 and an enclosing portion 92. In addition, the wavelength converting portion 91 and the surrounding portion 92 are integrally formed. The outer surface of the surrounding portion 92 corresponds to the side surface of the wavelength converting member 90. do.

[0051] The wavelength converting portion 91 has a rectangular parallelepiped shape. The wavelength conversion member 90 converts the incident light into light of a different wavelength. The material may be an inorganic material as the main material, but it does not have to be an inorganic material.

[0052] The wavelength conversion section 91 is formed mainly from ceramics and contains a fluorescent material. However, the present invention is not limited to this, and glass may be used as the main material, or a single crystal of a phosphor may be used. In consideration of the heat generated in the wavelength converting portion 91, the melting point is set to 1300° C. It is preferable to use a 2500°C material as the main material.

[0053] For example, when ceramics is used as the main material of the wavelength conversion section 91, the phosphor and aluminum oxide The phosphor content can be adjusted by sintering the ceramic material with a light-transmitting material such as aluminum. The content can be 0.05% by volume to 50% by volume of the total volume of the box. Alternatively, ceramics consisting essentially of phosphor may be used, which is obtained by sintering powder of the light source.

[0054] The phosphor used was cerium-activated yttrium aluminum garnet (Y AG), cerium-activated lutetium aluminum garnet (LAG), Nitrogen-containing calcium aluminosilicate (CaO-Al) activated with rhodium and / or chromium 2O3-SiO2), europium activated silicate ((Sr,Ba)2SiO4), Examples include α-sialon phosphors and β-sialon phosphors. Among them, phosphors with good heat resistance are It is preferable to use a YAG phosphor as the light source.

[0055] The enclosure 92 is a rectangular parallelepiped flat plate with a through hole in the center. The wavelength converting portion 91 is provided. The shape of the through hole corresponds to the shape of the wavelength converting portion 91. The surrounding portion 92 surrounds the side surface of the wavelength converting portion 91 .

[0056] The surrounding portion 92 can be formed using ceramics as the main material. Alternatively, metal or a composite of ceramics and metal may be used. It is preferable to use a material with high thermal conductivity that can dissipate heat generated by the wavelength conversion portion 91. The surrounding portion 92, which is mainly made of a material with a high thermal conductivity, is a heat dissipating portion that dissipates heat in the wavelength conversion portion 91. From this viewpoint, it can be regarded as a heat dissipation member in place of the enclosure portion 92.

[0057] The surrounding portion 92 also contains a light source 94 for receiving the light emitted by the semiconductor laser element 20 and the fluorescence emitted by the phosphor. It is preferable to use a material that reflects light with high reflectivity. The surrounding portion 92 has high reflectivity for reflecting the irradiated light. It can be considered as a light reflecting member. Materials with high reflectivity and high thermal conductivity include For example, alumina (Al2O3) ceramics can be mentioned.

[0058] A conductive film is provided on the lower surface of the surrounding portion 92. The conductive film is linear and has a wavelength conversion portion The both ends of the linear conductive film are connected to the The two ends are connected to different metal films. Alternatively, it may be provided in the vicinity of the wavelength converting portion 91.

[0059] The conductive film is preferably formed in a thin linear shape. The length of the line of the portion having a line width smaller than the width of the wavelength converting portion 91 is The width of the wavelength converting portion 91 here is, for example, For example, if the external shape is elliptical, it is the width of the minor axis. In such cases, the range is substantially specified based on these examples.

[0060] The wavelength conversion member 90 includes a wavelength conversion portion 91 made of a molded product such as a sintered body, and an enclosure portion 9 The powder material forming 2 can be integrally molded and sintered to form the molded product. The surrounding part 92 made of a molded product such as a sintered body and the powder material forming the wavelength converting part 91 are combined together. The sintering method can be, for example, a spark plasma sintering method ( Sintering (SPS) method, hot press sintering (HP) method, etc. can be used.

[0061] The conductive film can be formed using indium tin oxide (ITO). The conductive film made of ITO has high transmittance to visible light. It can be considered as a conductive film.

[0062] The light blocking member 100 has a shape with a through hole formed in the center. A convex shape is formed surrounding the through hole. In other words, a concave shape with a recessed center is formed on the lower surface side. is formed.

[0063] The light blocking member 100 is made of a resin having light blocking properties. It exhibits the property of not transmitting light, and in addition to blocking light, it also uses its absorbing and reflecting properties. For example, a filler such as a light diffusing material and / or a light absorbing material may be added to the resin. It can be formed by containing

[0064] The resin forming the light blocking member 100 may be an epoxy resin, a silicone resin, an acrylate resin, or the like. resin, urethane resin, phenolic resin, BT resin, etc. Examples of the filler include dark pigments such as carbon black.

[0065] Next, a process for manufacturing the light emitting device 1 using these components will be described. First, two light reflecting members 40 are disposed on the bottom surface 12 of the base 10. The bottom surface 12 can be said to be a placement surface on which the light reflecting members 40 are placed. Each is disposed on a different metal film 172 , and its lower surface is bonded to the bottom surface 12 of the base 10 . The position of each light reflecting member 40 is determined by the alignment mark 18 and the reference line S of the light reflecting member 40. L and is determined based on

[0066] The reference line SL of the light reflecting member 40 is a reference for alignment when arranging the light reflecting member 40. The reference line SL is a line that defines the distance between the light reflecting member 40 and the reference line SL. In other words, the light reflecting member 40 can be derived from the characteristics of a predetermined area. It can be obtained based on the region.

[0067] In the light emitting device 1, when viewed from above, a straight line passing through the side corresponding to the upper end of the light reflecting surface 41 is The reference line SL of the member 40 is not limited to this, and for example, the side corresponding to the lower end of the light reflecting surface 41 may be Alternatively, for example, a straight line passing through two of the rectangular upper surfaces of the light reflecting member 40 may be used as the reference line. The vertices may be used as feature points, and a straight line passing through these two feature points may be used as a reference line.

[0068] In each light reflecting member 40, the reference line SL is aligned with the first alignment mark 181 and the second alignment mark 182 in a top view. The alignment mark 182 is rotated by a predetermined angle to form a line parallel to the line. Here, the first alignment mark 181 and the second alignment mark 182 are The straight line that passes through is called the first straight line 1L, and the straight line obtained by rotating the first straight line 1L by a specified angle is called the second straight line 2L. It shall be called.

[0069] The two light reflecting members 40 are arranged point-symmetrically. The two light reflecting members 40 are aligned with the midpoint CP of the line connecting the second alignment marks 182. They are arranged symmetrically.

[0070] In detail, in the mounting machine, the first alignment mark 181 and the second alignment mark 182, the midpoint CP is determined, and the first straight line 1L is drawn at a predetermined angle with the midpoint CP as the axis. The rotated second straight line 2L is defined. When viewed from above, the second straight line 2L is in the X direction, and the second straight line 2L is in the X direction. The vertical direction is the Y direction, and the coordinates of the midpoint CP are (0,0) based on the XY plane. SL is parallel to the second line 2L, and the two light reflecting members 40 are point-paired at the coordinates (0, 0). Arrange them so that they are symmetrical.

[0071] In the top view, the second straight line 2L is a side (inner side) relating to the frame of the first region 111 or the third region 113. The side (inner side) of the frame of the second region 112 or the fourth region 114 is parallel to the surface 14. Parallel or perpendicular here includes a difference of 6 degrees or less.

[0072] That is, the predetermined angle for rotating the first straight line 1L is the angle between the first straight line 1L and the base 10 in design. It is obtained from the angle formed by the line passing through the side of the frame. The predetermined angle may be designed so that

[0073] The first straight line 1L is aligned with the third alignment mark 183 and the fourth alignment mark 18 Alternatively, it may be a straight line passing through any two alignment marks 18. It may be a straight line passing through three or more alignment marks 18 . Therefore, the first straight line 1L can be said to be a straight line obtained based on the plurality of alignment marks 18. do.

[0074] The two light reflecting members 40 are the third alignment mark 183 and the fourth alignment mark 184. Alternatively, the lines 184 may be arranged symmetrically with respect to the midpoint CP of the line connecting the lines 184.

[0075] In addition, when viewed from above, two light reflecting members 40, a third alignment mark 183, and a fourth alignment mark 184 are arranged. It does not overlap with the alignment mark 184. Therefore, at this stage, the third alignment mark The fourth alignment mark 183 and the fourth alignment mark 184 can be seen from the top side.

[0076] Next, the protection element 50 and the temperature measuring element 60 are disposed on the bottom surface 12 of the base 10. The element 50 is disposed on the metal film 172 on which one of the two light reflecting members 40 is disposed. The temperature measuring element 60 is made of a metal film 172 on which two light reflecting members 40 are arranged. The metal film 172 is disposed on and bonded to the metal film 172.

[0077] Next, two submounts 30 are placed on the bottom surface 12 of the base 10. Each submount 3 0 is arranged so that one of the sides of the upper surface is parallel to the first straight line when viewed from above. The two submounts 30 are disposed on different metal films 172, and their lower surfaces are The two submounts 30 are bonded to the bottom surface 12 of the base 10. The material 40 is disposed on the metal film 172 .

[0078] The submount 30 and the light reflecting member 40 may be disposed on different metal films 172. In addition, when viewed from above, the two submounts 30, the third alignment mark 183, and It does not overlap with the fourth alignment mark 184. Therefore, at this stage, the third alignment mark The mark 183 and the fourth alignment mark 184 can be seen from the top surface side.

[0079] Next, the semiconductor laser element 20 is placed on the submount 30. The sub-mounts 20 are placed on the upper surfaces of different sub-mounts 30, and their lower surfaces are bonded together. The position of each semiconductor laser element 20 is determined by the alignment mark 18 and the semiconductor laser element 2 0 and the light exit surface 21.

[0080] Each semiconductor laser element 20 is arranged so that the light-emitting end surface 21 is parallel to the first line 1L when viewed from above. The two semiconductor laser elements 20 are arranged point-symmetrically. With respect to the midpoint CP of the line connecting the first alignment mark 181 and the second alignment mark 182, The two semiconductor laser elements 20 are arranged symmetrically.

[0081] In detail, in the mounting machine, the first alignment mark 181 and the second alignment mark 182, the first straight line 1L is defined and the midpoint CP is determined. is the X direction, the direction perpendicular to the first line 1L is the Y direction, and the coordinates of the midpoint CP are (0,0). Based on the XY plane, the output end surface 21 is parallel to the first straight line 1L, and the two semiconductor lasers The element 20 is arranged so as to be point symmetric with respect to the coordinate (0,0).

[0082] Therefore, the two semiconductor laser elements 20 and the two light reflecting members 40 are based on the same point. The two semiconductor laser elements 20 are arranged symmetrically. The alignment marks 183 and 184 are arranged symmetrically with respect to the midpoint CP of the line connecting the alignment marks 183 and 184. This may also be done.

[0083] In addition, when viewed from above, two semiconductor laser elements 20, a third alignment mark 183, and It does not overlap with the fourth alignment mark 184. Therefore, at this stage, the third alignment mark The mark 183 and the fourth alignment mark 184 can be seen from the top surface side.

[0084] The two semiconductor laser elements 20 are arranged such that the light-emitting end faces 21 are in contact with the inner surface 14 of the base 10 when viewed from above. Therefore, the upper end of the light reflecting surface 41 is not parallel or perpendicular to the outer surface 15. In other words, the semiconductor laser element 20 is not perpendicular to the inner surface 14 of the base 10 when viewed from above. The light emitting end surface 21 is inclined with respect to the outer surface 15 or the upper end of the light reflecting surface 41. will be placed in.

[0085] In the light emitting device 1, when viewed from above, a line including the light emitting end face 21 of the semiconductor laser element 20 and a light reflecting face 22 are aligned. The oblique angle formed by the straight line including the upper end of the projection surface 41 is in the range of 25 degrees to 35 degrees. The oblique angle here is the angle α shown in FIG. 8, not the angle β. The oblique angle is 10 degrees or more. The angle may be in the range of 80 degrees or less. In consideration of the irradiation of light onto the light reflecting member 40, the oblique angle is 40 degrees. It is best to design it at 5 degrees or less.

[0086] In each of the two semiconductor laser elements 20, the light emitted from the light emitting end face 21 is The corresponding light reflecting member 40 is disposed on the same metal film. The light reflecting member 40 is configured so that at least the main part of the light is irradiated onto the light reflecting surface 41. , the semiconductor laser element 20 is disposed.

[0087] The first straight line 1L obtained directly from the alignment mark 18 and the first straight line 1L It is better to mount it along the first line 1L than the second line 2L obtained by rotating it at point CP. Therefore, the semiconductor laser element 20 and the light reflecting member 40, which are disposed at an angle, In this case, it is preferable to align the light emitting end surface 21 with the first straight line and the light reflecting member 40 with the second straight line. The direction of travel of light reflected by the light reflecting member 40 can be accurately determined.

[0088] The light reflecting member 40 is attached to a predetermined portion of the inner surface 14 or the outer surface 15 of the base 10 when viewed from above. Rather than mounting it along the edge, it is mounted along the second line, which is rotated a certain angle from the first line. The mounting method allows the semiconductor laser element 20 and the light reflecting member 40 to be mounted with high precision at an oblique angle. can be done.

[0089] Between the corresponding semiconductor laser element 20 and the light reflecting member 40, the semiconductor Therefore, the laser beam emitted from the semiconductor laser element 20 is The light beam propagates in a direction approaching the midpoint. At least one of them is arranged in a position close to the temperature measuring element 60. It is believed that there is no significant difference in temperature between the semiconductor laser element 20 and the other semiconductor laser element 20. This is because

[0090] The submount 30 on which the semiconductor laser element 20 is mounted is It serves as a heat dissipation member that dissipates heat generated from the laser element 20. In order for the laser diode 30 to function as a heat dissipation member, it is necessary to use a material having a higher thermal conductivity than the semiconductor laser element 20. Also, if it is made of a material with a higher thermal conductivity than the bottom surface of the base, it will be possible to achieve higher performance. This allows for a good heat dissipation effect.

[0091] In addition, the submount 30 determines the light emission position of the semiconductor laser element in the light emitting device 1. For example, the light passing through the optical axis can be adjusted to be horizontal with the bottom surface 12. When it is desired to irradiate a predetermined position on the light reflecting surface 41, the submount is adjusted by adjusting the It can be used as:

[0092] Next, the semiconductor laser element 20 is electrically connected, the protective element 50 is electrically connected, and the temperature A plurality of wires 70 are bonded to establish electrical connections of the temperature measuring element 60. For the connection, a metal film 172 provided on the bottom surface 12 of the base 10 is used. The metal film 172 provided on the bottom surface 12 of the semiconductor device 10 is a conductive region provided for electrical connection. It plays a vital role.

[0093] The wiring 70 is connected so that the two semiconductor laser elements and the protection element 50 are connected in series. In addition, the temperature measuring element 60 is separate from the two semiconductor laser elements and the protection element 50. The electrodes are joined to provide electrical connection.

[0094] Some of the wirings 70 are bonded at one end to the top surface of the semiconductor laser element 20 and at the other end to the base. 10. Therefore, one end of the wiring 70 is connected to the metal film 172 provided on the bottom surface 12 of the semiconductor device 10. The placement position when bonding to the upper surface of the solid laser element 20 is determined based on the first straight line. This allows the wiring 70 to be bonded to the narrow upper surface with high precision.

[0095] Next, the light-transmitting member 80 is placed on the upper surface of the base 10. The light-transmitting member 80 has a lower surface It is placed and joined to the upper surface of the step portion 16 of the base portion 10. More specifically, the first step portion 161 The metal film provided in the outer peripheral region of the lower surface of the light-transmitting member 80 and the first step portion The metal film provided on the upper surface of 161 is bonded and fixed via Au—Sn or the like.

[0096] The light-transmitting member 80 is joined to the base 10, forming a closed cavity in which the semiconductor laser element 20 is disposed. In this way, in the light emitting device 1, the light-transmitting member 80 serves as a lid member. This closed space is formed in an airtight sealed state. This makes it possible to prevent organic matter and the like from being collected on the light emitting end face of the semiconductor laser element 20. do.

[0097] In top view, the light-transmitting member 80 includes the third alignment mark 183 and the fourth alignment mark 184. On the other hand, the first alignment mark 181 and the second alignment mark Therefore, the first alignment mark 181 and the second alignment mark 182 do not overlap. The mark 182 is provided outside the joining area of ​​the base 10 where the light-transmitting member 80 is joined.

[0098] Here, the light-transmitting member 80 is attached to the base 10 with the wavelength conversion member 90 bonded to the upper surface. That is, the light-transmitting member 80 is disposed on the upper surface of the base 10, and the wavelength conversion member 90 is disposed on the upper surface of the base 10. The wavelength conversion member 90 is disposed on the upper surface of the optical member 80. It is disposed above the semiconductor laser element 20 and the light reflecting member 40 .

[0099] The light beams emitted from the two semiconductor laser elements 20, particularly the main portions of the light beams, correspond to the respective The light is reflected by the light reflecting surface 41 of the light reflecting member 40, passes through the light-transmitting member 80, and undergoes wavelength conversion. The light is incident on the lower surface of the switching portion 91 .

[0100] A part or all of the light incident on the wavelength conversion section 91 is converted into a different wavelength by the wavelength conversion section 91. The laser light or wavelength-converted light is emitted from the upper surface of the wavelength converting section 91. The light is emitted to the outside of the light emitting device 1. In other words, the upper surface of the wavelength conversion portion 91 is the light extraction surface of the light emitting device 1. This becomes:

[0101] When viewed from above, the midpoint CP of the line connecting the first alignment mark and the second alignment mark is The wavelength conversion section is located within the region where the two semiconductor lasers are provided. The light emitted from the laser element 20 can be made to enter the wavelength conversion portion 91 effectively.

[0102] If the heat generated by wavelength conversion is concentrated in a specific location, the wavelength conversion section 91 is likely to deteriorate. Therefore, it is preferable that the distribution of light incident on the wavelength converting portion 91 is diffused. The high-intensity portions of the laser beams emitted from the semiconductor laser elements 20 do not overlap. In the light emitting device 1, the light passing through the optical axis is arranged so as not to pass through the center of the wavelength conversion section. It is set to.

[0103] The wavelength conversion member 90 is formed by joining the surrounding portion 92 and the light-transmitting member 80. The conductive member 80 is bonded to the metal film connected to one end of the conductive film in the surrounding portion 92. The metal film is joined to one of the two metal films of the conductive member 80 and connected to the other end, and the two metal As a result, the two metal films of the light-transmitting member 80 are bonded to the other metal film. As a result, it becomes possible to electrically connect the electrodes.

[0104] The conductive film is provided on the lower surface of the wavelength converting portion 91 in the form of a thin linear film. Therefore, if an abnormality such as a crack occurs in the wavelength conversion portion 91, the conductive The film also cracks, causing changes in the electrical connection. , a large increase in resistance) can be detected to detect an abnormality in the wavelength conversion unit 91. The conductive film can be considered as an abnormality detection element 93 that is a sensor for detecting an abnormality in the wavelength conversion unit 91.

[0105] The upper surface of the light-transmitting member 80 is larger than the lower surface of the wavelength conversion member 90. The upper surface of the light-transmitting member 80 surrounds the lower surface of the wavelength conversion member 90. When viewed from above, the two metal films on the upper surface of the light-transmitting member 80 are respectively the wavelength conversion member 9 It is provided from the area overlapping with the bottom surface of the .0 to the area where it does not overlap.

[0106] Next, the wiring 70 for electrically connecting the abnormality detection element 93 is joined. The metal film 173 provided on the second step portion 162 of the base 10 and the metal film 174 of the transparent member 80 are connected to each other. The area of ​​the metal film that does not overlap with the lower surface of the wavelength converting member 90 is utilized. The metal film serves as a conductive region provided for electrical connection. 70 has one end connected to the metal film on the upper surface of the light-transmitting member 80 and the other end connected to the upper surface of the second step portion 162. It is bonded to the metal film 173 .

[0107] Here, the semiconductor laser element 20, the protection element 50, and the temperature measurement element 60 are electrically connected. The wiring 70 for connecting the first wiring 71 and the wiring for electrically connecting the abnormality detection element 93 are The line 70 will be referred to as a second wiring 72 .

[0108] The six metal films 171 on the upper surface 11 of the base 10 are used to supply power to the semiconductor laser element 20. two metal films for supplying power to the temperature measuring element 60; and two metal films for supplying power to the detection element 93. The metal film 171 provided on the upper surface 11 of the semiconductor device 10 is a conductive region provided for electrical connection. It plays a vital role in

[0109] However, the power supply mode is not limited to this. For example, the temperature measuring element 60 and the abnormality detection element If the element 93 is not provided, the metal film may not be provided. A membrane may be used.

[0110] The metal film 171 forming the first alignment mark 181 is introduced into the first region 111. The second region 112 has an alignment region for the alignment mark 18. At least the first alignment mark 181 is not formed in the first region 111. .

[0111] The metal film 171 forming the second alignment mark has a conductive region in the third region 113. and a fourth region 114 has an alignment region for the alignment mark 18. At least, the second alignment mark 182 is not formed in the third region 113.

[0112] Next, the light blocking member 100 is formed inside the frame formed by the upper surface 11 of the base 10. The light-shielding portion 100 is formed so as to fill the gap between the base portion 10 and the wavelength conversion member 90. The material 100 can be formed by pouring resin into the gap and hardening it with heat. By embedding the light-shielding member 100, it is possible to obtain a better light-shielding effect than by embedding the standardized light-shielding member 100. It is possible. The resin does not enter the closed space in which the semiconductor laser element 20 is disposed.

[0113] The light blocking member 100 has an inner surface 14 that intersects with the upper surface 11 of the base 10, a step portion 16 of the base 10, and a the upper surface, the side surface of the light-transmitting member 80, the upper surface of the light-transmitting member 80, and the side surface of the wavelength conversion member 90; In addition, it does not reach the upper surface of the wavelength conversion member 90. Alternatively, it does not reach the upper surface of the surrounding portion 92. Even if it does reach the upper surface of the wavelength conversion portion 91, it does not reach the upper surface of the semiconductor laser element 2. 0 can be prevented from leaking from places other than the wavelength converting section 91.

[0114] The light-shielding member 100 also contains the second wiring 72. At this point, the second wiring 72 is not exposed in the light emitting device 1. It is possible to protect the material from adhesion of water droplets, etc. However, it is not necessarily required to encapsulate the material.

[0115] The wavelength conversion member 90 passes through the through-hole formed in the light blocking member 100. The convex protrusion formed on the underside of the light-transmitting member 80 is connected to the side surface of the base 10. The inner surface 14 fits into the groove between the inner surface 14 and the outer surface 14 .

[0116] The light blocking member 100 is a metal member exposed inside the frame formed by the upper surface 11 of the base 10 when viewed from above. In the light emitting device 1, the light blocking member 100 is made of an insulating material. This serves as an insulating member, preventing the external power source from The conduction area for power supply can be limited to the outside of the recessed space.

[0117] In addition, when viewed from above, the light blocking member 100 includes the first alignment mark 181 and the second alignment mark 182. In other words, the light blocking member 100 does not overlap with the first alignment mark 182. 181 and the second alignment mark 182 are not hidden.

[0118] The light emitting device 1 can be manufactured through the above steps. The light emitting device 1 has the following external shape: It has a first alignment mark 181 and a second alignment mark 182. When the manufactured light emitting device 1 is mounted on another component, the first alignment mark 181 Furthermore, high-precision mounting using the second alignment mark 182 becomes possible.

[0119] The third alignment mark 183 and the fourth alignment mark 184 are aligned on the bottom surface of the base 10. 12, and the first alignment mark 181 and the second alignment mark The mounting marks 182 may be used for mounting other components. In some cases, the alignment mark 18 provided on the same plane as the bottom surface 12, which is the placement surface, may be can sometimes be implemented with high accuracy.

[0120] The first alignment mark 181 and the second alignment mark 182 are also The third alignment mark 183 and the fourth alignment mark 184 are used for mounting with components other than the first alignment mark 184. The work 184 may be used for mounting components of the light emitting device 1. Depending on the process, the alignment marks 18 on the top surface 11 and the alignment marks 19 on the bottom surface 12 may be You may use either Q18 or Q19.

[0121] The steps described here are just an example, and the order of some of the steps may be changed. For example, before arranging the light reflecting member 40, the submount 30 and the semiconductor laser element 20 Alternatively, for example, the semiconductor laser element 20 may be disposed on the submount 30. Therefore, the submount 30 may be disposed on the bottom surface 12. If the order is not correct, it can be changed flexibly. For example, after forming a closed space with a lid member, the semiconductor laser element 20 is placed in the closed space. This is the order of the process.

[0122] Second Embodiment Fig. 13 is a perspective view of the light emitting device 2 according to the second embodiment. Fig. 14 is a perspective view corresponding to Fig. 13. 15 is a top view of the light emitting device 2. FIG. 15 is a light-shielded view of the light emitting device 2 to explain the internal structure. FIG. 1 is a perspective view of a state in which a member 101 is removed.

[0123] The light emitting device 2 according to the second embodiment has a base shape and a light blocking member formed therewith. The shape is different from that of the light emitting device 1 according to the first embodiment. The alignment marks were formed by providing a metal film in the area where the alignment marks were to be formed. In position 2, alignment is achieved by providing a metal film around the area to be used as an alignment mark. Form a mark.

[0124] In the base 10 of the light emitting device 1, the second step portion 162 is located between the second region 112 and the fourth region 113 in a top view. The area 114 is formed along the entire length of the side of the frame. 0, the second step portion 163 is in contact with a part of the side of the frame in the second region 112 in top view. The fourth region 114 is formed on a part of the side of the frame. Since the meanings of are the same as those explained in the first embodiment, they are denoted by the symbols in FIGS. 13 to 15. The number is omitted.

[0125] In addition, in the top view, the second region 112 has a second step portion 16 on another part of the side of the frame. 3 is not formed, and the second step portion 163 is formed in another part of the side relating to the frame in the fourth region 114. Specifically, the edges of the second area 112 and the fourth area 113 are not formed. In this case, the second step portion 163 is formed in the central portion, and the second step portions 16 are formed on both sides thereof. 3 is not formed.

[0126] In the portion where the second step portion 163 is not formed, the upper surface of the first step portion 161 intersects with the upper surface 11. Therefore, the second region 112 and the fourth region 114 of the upper surface 11 intersect with the side surfaces. The portion of the upper surface 11 that intersects with the inner surface 14 is concave in top view. In terms of the distance from the surface 15 to the outer surface 15, the part of the concave depression is closer to the surface 15 than the part of the concave depression. The parts on both sides are larger.

[0127] Here, the former narrow part is the narrow part of the upper surface 11, and the latter wide part is the wide part of the upper surface 11. The second region 112 and the fourth region are referred to as the wide region. 3 is a line passing through the inner surface 14 of the wide portion and a line passing through the outer surface 15 of the wide portion when viewed from above. is formed between

[0128] In the light emitting device 2, an alignment mark 19 is provided on the wide portion of the upper surface 11. , the first alignment mark 191 and the second alignment mark 192 The alignment mark is formed by surrounding the area where the alignment mark is to be provided with a metal film. As an example of a typical method of forming the alignment marks, a mask is applied to the area where the alignment marks are to be formed, and then a gold For example, a metal film is formed on the substrate and then the mask is removed. Then, we removed the metal film only in the area where the alignment marks were to be placed. That's fine.

[0129] When forming an alignment mark using the metal film 171, as in the light emitting device 1, Rather than forming a metal film in the shape of the alignment mark, as in the light emitting device 2, In some cases, forming a metal film around the area where the ment mark is to be provided may result in stable manufacturing. On the other hand, between the former and latter cases, the latter is easier to form alignment marks. Therefore, a large area needs to be secured.

[0130] In the case of the light emitting device 1, the second step portion is formed along the entire length of the side of the frame. In order to form the latter alignment mark, the outer shape of the base must be enlarged. As in the light emitting device 2, the outer shape of the base is enlarged by partially forming the second step portion. The latter method can form alignment marks without using the conventional method.

[0131] Therefore, when viewed from above, the first region 111 or the third region 113 is parallel to the side of the frame. The first alignment mark 191 or the second alignment mark 192 is a straight line. The straight line does not intersect with the second step portion 163. Also, the second step portion 163 is A straight line passing through the alignment mark 191 and a straight line passing through the second alignment mark 192 are The first alignment layer is formed in the sandwiched region and not outside this region. The straight line connecting the first alignment mark 191 and the second alignment mark 192 does not intersect with the second step portion 163. I don't understand.

[0132] In the light emitting device 2, the second step portion 16 is The length of the first step portion 161 is longer than the length of the light emitting device 1. The difference between the length of the difference portion 161 and the length of the second step portion 163 becomes large. The second wiring 72 is bonded to the metal film on the upper surface of the wiring 72 .

[0133] The light blocking member 101 can be formed by, for example, pouring resin and applying heat to it. The resin is made of an insulating material, and is used to prevent the second wiring 72 from being damaged due to factors outside the device. It serves as an insulating material that protects the circuit from electrical current passing through. In order to achieve this, it is necessary to form an insulating member so that the second wiring 72 is not exposed. As described above, the second step portion 163 of the light emitting device 2 is shorter in length than the first step portion 161, and therefore the resin This makes it easier to control the flow of the liquid.

[0134] As explained above, the present invention having the technical features disclosed in the specification The present invention is not limited to the structure of the light emitting device described in each embodiment. The present invention can also be applied to a light emitting device having components not shown, and The fact that there is a difference between the light emitting device and the light emitting device described above does not constitute a reason for not being able to apply the present invention.

[0135] This means that all the components of the light emitting device disclosed in the embodiment are necessary and sufficient. This shows that the present invention can be applied even when the provision of the device is not essential. For example, The claims may include a part of the manufacturing process and a part of the constituent elements of the light emitting device disclosed in the embodiments. If an element is not described, the element is not limited to the elements disclosed in this embodiment. The degree of freedom of design by those skilled in the art, such as substitution, omission, modification of shape, change of material, etc., is not limited to the above. The present invention recognizes the above and claims that the invention described in the claims is applicable. do. [Industrial Applicability]

[0136] The light emitting device described in each embodiment can be used in an in-vehicle headlight, a lighting device, a projector, a headset, It can be used as a light source for backlighting of displays and other displays. do. [Explanation of symbols]

[0137] 1, 2 Light-emitting device 10, 210 base 11 Top side 111 First area 112 Second area 113 Third area 114 4th area 12 Bottom 13 Bottom side 14 Inner surface 15 External surface 16 Step 161 First step 162, 163 Second step 17 Metal Film 171 Metal film (top surface) 172 Metal film (bottom) 173 Metal film (second step) 18, 19 Alignment marks 181, 191 First alignment mark 182, 192 Second alignment mark 183 Third alignment mark 184 4th alignment mark 20 Semiconductor laser element 21 Output end face 30 Submount 40 Light reflecting member 41 Light reflective surface 411 1st reflective surface 412 Second reflective surface 50 Protection element 60 Temperature measuring element 70 Wiring 71 1st wiring 72 2nd wiring 80 Translucent material 90 Wavelength conversion material 91 Wavelength conversion unit 92 Encirclement 93 Anomaly detection element 100, 101 Light blocking member

Claims

1. a semiconductor laser element; a base having a first alignment mark, a second alignment mark, a third alignment mark, and a fourth alignment mark and an arrangement surface on which the semiconductor laser element is arranged; a cover member joined to the base and forming a closed space in which the semiconductor laser element is disposed; Equipped with the first alignment mark and the second alignment mark are provided outside the closed space, the third alignment mark and the fourth alignment mark are provided in the closed space, a line connecting the first alignment mark and the second alignment mark and a line connecting the third alignment mark and the fourth alignment mark overlap with each other;

2. the base further has an upper surface; the first alignment mark and the second alignment mark are provided on the top surface, The light emitting device according to claim 1 , wherein the third alignment mark and the fourth alignment mark are provided on the placement surface.

3. the third alignment mark and the fourth alignment mark overlap with the lid member in a top view; The light emitting device according to claim 1 , wherein the first alignment mark and the second alignment mark do not overlap the lid member in a top view.

4. 2. The light emitting device according to claim 1, wherein a straight line connecting said first alignment mark and said second alignment mark is parallel to an emission end face of said semiconductor laser element in a top view.

5. the first alignment mark and the second alignment mark are formed by a plurality of metal films provided on the base portion, The light emitting device according to claim 1 , wherein the metal film forming the first alignment mark and the metal film forming the second alignment mark are different.

6. the third alignment mark and the fourth alignment mark are formed by the plurality of metal films, The light emitting device according to claim 5 , wherein the metal film forming the third alignment mark and the metal film forming the fourth alignment mark are different.

7. the third alignment mark and the fourth alignment mark are formed by a plurality of metal films provided on the base portion, The light emitting device according to claim 1 , wherein the third alignment mark and the fourth alignment mark are formed from different metal films.

8. the base further has an upper surface; the base portion has a plurality of first metal films provided on the upper surface of the base portion and a plurality of second metal films provided on the placement surface of the base portion; The light emitting device according to claim 1 , wherein the plurality of first metal films and the plurality of second metal films are electrically connected to each other.

9. the first alignment mark and the second alignment mark are formed by the plurality of first metal films, The light emitting device according to claim 8 , wherein the third alignment mark and the fourth alignment mark are formed by the plurality of second metal films.

10. the cover member is a light-transmitting member, The light emitting device according to claim 1 , wherein light emitted from said semiconductor laser element passes through said lid member.

Images