Analytical device

Abstract

To provide a technique capable of accurately detecting the concentration of a component contained in a processing liquid used for single-wafer processing of substrates.SOLUTION: An analyzer according to an embodiment of the present disclosure includes a liquid receiver and a concentration sensor. The liquid receiver receives a processing liquid flowing out from a substrate to be liquid-processed while rotating. The concentration sensor detects the concentration of components contained in the processing liquid staying in the liquid receiver.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The disclosed embodiments relate to an analytical device. [Background technology]

[0002] Conventionally, in batch processing in which a plurality of substrates such as semiconductor wafers (hereinafter also referred to as wafers) are immersed in a process, a technique for detecting the concentration of components contained in a process liquid used in such processing has been known (see Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2010-261793 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique capable of accurately detecting the concentration of components contained in a processing liquid used in single-substrate processing. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, an analytical device includes a liquid receiving unit and a concentration sensor. The liquid receiving unit rotates to receive a treatment liquid flowing out from a substrate undergoing a liquid treatment. The concentration sensor detects the concentration of a component contained in the treatment liquid remaining in the liquid receiving unit. [Effects of the Invention]

[0006] According to the present disclosure, the concentrations of components contained in a processing liquid used in single-substrate processing can be detected with high accuracy. [Brief explanation of the drawings]

[0007] [Figure 1]FIG. 1 is a schematic diagram showing a schematic configuration of a substrate processing system according to an embodiment. [Figure 2] FIG. 2 is a schematic diagram showing an example of a specific configuration of a processing unit according to the embodiment. [Figure 3] FIG. 3 is a diagram illustrating an example of the configuration of the analysis device according to the embodiment. [Figure 4] FIG. 4 is a diagram illustrating an example of the configuration of an analyzer according to the first modification of the embodiment. [Figure 5] FIG. 5 is a diagram illustrating an example of the configuration of an analyzer according to the second modification of the embodiment. [Figure 6] FIG. 6 is a diagram illustrating an example of the configuration of an analyzer according to the third modification of the embodiment. [Figure 7] FIG. 7 is a diagram illustrating an example of the configuration of an analyzer according to the fourth modification of the embodiment. [Figure 8] FIG. 8 is a diagram illustrating an example of the configuration of an analyzer according to the fourth modification of the embodiment. [Figure 9] FIG. 9 is a diagram illustrating an example of the configuration of an analyzer according to the fifth modification of the embodiment. [Figure 10] FIG. 10 is a diagram illustrating an example of the configuration of an analyzer according to the sixth modification of the embodiment. [Figure 11] FIG. 11 is a schematic diagram showing an example of a specific configuration of a processing unit according to the seventh modification of the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the analytical device disclosed in the present application will be described in detail with reference to the accompanying drawings. Note that the present disclosure is not limited to the embodiments shown below. It should be noted that the drawings are schematic, and the dimensional relationships and ratios of elements may differ from reality. Furthermore, the dimensional relationships and ratios may differ between the drawings.

[0009] BACKGROUND ART In a batch process in which a plurality of substrates such as semiconductor wafers (hereinafter also referred to as wafers) are immersed in a batch, a technique for detecting the concentration of components contained in a processing solution used in such a process has been known.

[0010] On the other hand, in single-wafer processing in which a processing liquid is discharged onto a rotating substrate one by one to perform liquid processing, it is extremely difficult to accurately detect the concentration of components contained in the processing liquid used in such processing, because the thickness of the liquid film formed on the substrate is very thin, and when the processing liquid on the substrate is measured, a measurement length sufficient for accurately detecting the concentration of the components cannot be secured.

[0011] Therefore, it is desired to realize a technology that can overcome the above-mentioned problems and accurately detect the concentrations of components contained in the processing liquid used in single-substrate processing.

[0012] <Outline of the substrate processing system> First, a schematic configuration of a substrate processing system 1 in which an analysis device 60 (see FIG. 2) according to an embodiment is provided will be described with reference to Fig. 1. Fig. 1 is a diagram showing a schematic configuration of the substrate processing system 1 according to an embodiment. In the following, to clarify the positional relationship, mutually orthogonal X-axis, Y-axis, and Z-axis are defined, and the positive direction of the Z-axis is defined as the vertically upward direction.

[0013] 1, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0014] The carry-in / out station 2 includes a FOUP placement section 11 and a transport section 12. On the FOUP placement section 11, a plurality of FOUPs H are placed, each accommodating a plurality of substrates, in this embodiment, semiconductor wafers W (hereinafter referred to as wafers W), in a horizontal position.

[0015] The transfer section 12 is provided adjacent to the FOUP placement section 11 and includes a substrate transfer device 13 and a transfer section 14. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 13 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the wafer W between the FOUP H and the transfer section 14 using the wafer holding mechanism.

[0016] The processing station 3 is provided adjacent to the transport section 12. The processing station 3 includes a transport section 15 and a plurality of processing units 16. The plurality of processing units 16 are provided side by side on both sides of the transport section 15.

[0017] The transfer section 15 includes a substrate transfer device 17 therein. The substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 17 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the wafer W between the delivery section 14 and the processing unit 16 using the wafer holding mechanism.

[0018] The processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17 .

[0019] The substrate processing system 1 also includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs that control various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.

[0020] Such a program may be recorded on a computer-readable storage medium and installed from that storage medium into the storage unit 19 of the control device 4. Examples of computer-readable storage media include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0021] In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 in the loading / unloading station 2 removes the wafer W from the FOUP H placed on the FOUP placement unit 11 and places the removed wafer W on the delivery unit 14. The wafer W placed on the delivery unit 14 is then removed from the delivery unit 14 by the substrate transfer device 17 in the processing station 3 and carried into the processing unit 16.

[0022] The wafer W carried into the processing unit 16 is processed by the processing unit 16, and then carried out of the processing unit 16 by the substrate transfer device 17 and placed on the delivery section 14. Then, the processed wafer W placed on the delivery section 14 is returned to the FOUP H of the FOUP placement section 11 by the substrate transfer device 13.

[0023] <Processing unit configuration> Next, the configuration of the processing unit 16 in which the analysis device 60 is installed will be described with reference to Fig. 2. Fig. 2 is a schematic diagram showing an example of a specific configuration of the processing unit 16. As shown in Fig. 2, the processing unit 16 includes a chamber 20, a substrate processing section 30, a liquid supply section 40, a collection cup 50, and an analysis device 60.

[0024] The chamber 20 accommodates a substrate processing unit 30, a liquid supply unit 40, a collection cup 50, and an analyzer 60. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20. The FFU 21 forms a downflow within the chamber 20.

[0025] The substrate processing unit 30 includes a holder 31, a support 32, and a drive unit 33, and performs liquid processing on a placed wafer W. The holder 31 holds the wafer W horizontally. The support 32 is a member extending in the vertical direction, and its base end is rotatably supported by the drive unit 33, with its tip end supporting the holder 31 horizontally. The drive unit 33 rotates the support 32 around a vertical axis.

[0026] The substrate processing unit 30 rotates the support column 32 using the drive unit 33, thereby rotating the holder 31 supported by the support column 32, and thereby rotating the wafer W held by the holder 31.

[0027] The holder 31 holds the wafer W horizontally, for example, by adsorbing the lower surface of the wafer W. The holder 31 is not limited to an adsorption chuck and may be an electrostatic chuck or the like. The wafer W is held by the holder 31 with the surface on which substrate processing is performed facing upward.

[0028] The liquid supply unit 40 supplies a processing fluid to the wafer W. The liquid supply unit 40 includes nozzles 41a and 41b, an arm 42a that horizontally supports the nozzles 41a and 41b, and a pivoting and lifting mechanism 43a that pivots and lifts the arm 42a.

[0029] Furthermore, the liquid supply unit 40 includes a nozzle 41c, an arm 42b that horizontally supports the nozzle 41c, and a pivoting and lifting mechanism 43b that pivots and raises and lowers the arm 42b.

[0030] The nozzle 41a is connected to a DHF supply source 46a via a valve 44a and a flow rate regulator 45a. The DHF supply source 46a is, for example, a tank that stores DHF (dilute hydrofluoric acid). DHF is an example of a processing liquid.

[0031] The nozzle 41b is connected to an IPA supply source 46b via a valve 44b and a flow rate regulator 45b. The IPA supply source 46b is, for example, a tank that stores IPA (Isopropyl Alcohol). The IPA is another example of a processing liquid.

[0032] The nozzle 41c is connected to a DIW supply source 46c via a valve 44c and a flow rate regulator 45c. The DIW supply source 46c is, for example, a tank that stores DIW (Deionized Water). Such DIW is yet another example of a processing liquid.

[0033] DHF supplied from a DHF supply source 46a is discharged from the nozzle 41a, IPA supplied from an IPA supply source 46b is discharged from the nozzle 41b, and DIW supplied from a DIW supply source 46c is discharged from the nozzle 41c.

[0034] Collection cup 50 is disposed to surround holder 31, and collects processing liquid S (see FIG. 3) scattered from wafer W due to rotation of holder 31. A drainage port 51 is formed in the bottom of collection cup 50, and processing liquid S collected by collection cup 50 is discharged from drainage port 51 to the outside of processing unit 16. In addition, an exhaust port 52 is formed in the bottom of collection cup 50, which discharges gas supplied from FFU 21 to the outside of processing unit 16.

[0035] The analyzer 60 detects the concentration of components contained in the processing liquid S that flows out from the wafer W due to the rotation of the holder 31. The analyzer 60 is disposed, for example, outside the edge of the wafer W and inside the collection cup 50. The analyzer 60 is also disposed at a lower position than the wafer W held by the holder 31.

[0036] <Analytical equipment configuration> Next, the configuration of the analysis device 60 according to the embodiment will be described with reference to Fig. 3. Fig. 3 is a diagram showing an example of the configuration of the analysis device 60 according to the embodiment.

[0037] 3, an analyzing apparatus 60 according to the embodiment includes a liquid receiving portion 61 and a concentration sensor 62. The liquid receiving portion 61 receives the processing liquid S flowing out from a wafer W (see FIG. 2) that is being subjected to liquid processing while rotating. The concentration sensor 62 detects the concentration of components contained in the processing liquid S that remains in the liquid receiving portion 61.

[0038] The concentration sensor 62 according to the embodiment uses, for example, infrared spectroscopy to detect the concentration of the component contained in the treatment liquid S. The concentration sensor 62 has a light projecting part 62a and a light receiving part 62b.

[0039] The light projecting unit 62a is connected to an infrared light source (not shown), for example, by an optical fiber (not shown). The light projecting unit 62a irradiates the infrared light IR supplied from the infrared light source onto the light receiving unit 62b via the measurement target 65 of the liquid receiving unit 61.

[0040] Light receiving unit 62b is connected to a photometry unit (not shown), for example, by an optical fiber (not shown). Light receiving unit 62b receives infrared light IR irradiated from light projecting unit 62a via measurement unit 65 of liquid receiving unit 61, and sends the received light to the photometry unit. The photometry unit separates the received infrared light IR into spectral components and sends the data to control unit 18 (see FIG. 1).

[0041] Each substance has its own unique absorption spectrum. The control unit 18 can obtain the absorbance at a predetermined wavelength corresponding to the component to be measured from the absorption spectrum of infrared light IR, and calculate the concentration of that component.

[0042] For example, in the infrared light IR absorption spectrum obtained by the photometry unit, an absorption peak due to the OH bond of HO is observed near a wavelength of 1460 (nm), and two absorption peaks due to the C-H bond of IPA are observed near a wavelength of 1690 (nm).

[0043] Therefore, when detecting the concentration of HO in the treatment solution S, it is sufficient to focus on the absorbance A at the absorption peak of the OH group at a wavelength of approximately 1460 (nm). Note that the wavelength around 1460 (nm) is the overtone of the stretching vibration of the OH group, and the wavelength around 1690 (nm) is the overtone of the stretching vibration of the CH group.

[0044] The absorbance A is expressed by the Beer-Lambert law as follows: A = αLC (1) A: Absorbance α: absorption coefficient L: Measurement length C: Concentration

[0045] Based on the above formula (1), if the absorption coefficient α of the component to be detected and the measurement length L are known, the value of the concentration C can be determined. In this embodiment, the measurement length L is the distance L0 between the light-projecting unit 62a and the light-receiving unit 62b, as shown in FIG.

[0046] On the other hand, since the extinction coefficient α changes due to the influence of coexisting components, it is preferable to perform measurements using a processing solution S with an equal measurement length L under conditions close to the actual processing conditions, create a calibration curve, and calculate the value of the concentration C based on the calibration curve.

[0047] In this embodiment, the infrared light source of the concentration sensor 62 preferably emits infrared light IR in a continuous wavelength range, which allows the concentration of many components to be detected simply by changing the settings of the control unit 18.

[0048] Furthermore, even if the component to be detected is fixed, the absorption peak wavelength may shift depending on the surrounding substances present, so using infrared light (IR) with a continuous wavelength allows for more accurate measurements. Commercially available light sources such as halogen tungsten lamps can be used as such light sources.

[0049] The infrared light IR emitted by the infrared light source may have a single wavelength. For example, the infrared light source may be a tunable laser, or may be one that selectively extracts the absorption peak wavelength of a target component using an interference filter or the like. Alternatively, an interference filter, which is a bandpass filter, may be installed in the light projecting unit 62a to irradiate infrared light IR of a desired wavelength.

[0050] In this way, by using infrared light IR of a single wavelength, the calculation process in the control unit 18 can be simplified, and the calculation speed can be increased.

[0051] The light projecting unit 62a is preferably capable of projecting parallel light rays using a collimator or the like, but may also be capable of projecting light rays that are condensed onto the light receiving unit 62b in order to ensure the brightness of the optical system.

[0052] The photometry section connected to the light receiving section 62b separates the infrared light IR guided from the light receiving section 62b by an optical fiber as required, detects it, converts it into an electrical signal, and performs processing such as amplification as required.

[0053] The structure of the photometry unit is not particularly limited, and any known spectrophotometer can be used, such as a dispersive spectrophotometer using a diffraction grating or the like, or a non-dispersive spectrophotometer such as a Fourier transform infrared spectrophotometer. Note that when infrared light IR of a specific wavelength is projected from the light projecting unit 62a, a spectroscopic means in the photometry unit is not necessary.

[0054] The control unit 18 calculates the absorption spectrum and absorbance at a predetermined wavelength based on the electrical signal from the photometer. The control unit 18 also performs an averaging process by integrating the absorbance, or creates a frequency distribution within a unit time, calculates the median value, and performs a process to reduce the variability of the measurement data. The control unit 18 then performs concentration calculations, etc.

[0055] When infrared light IR having a continuous wavelength range is used, the wavelength range must include the wavelengths absorbed by the components to be detected. For example, when measuring HO and IPA, infrared light IR having a wavelength range including 1350 (nm) to 1720 (nm) is preferably irradiated.

[0056] Furthermore, absorption peaks for measuring the concentration of HO exist near the wavelength 1460 (nm) mentioned above, as well as near wavelengths 1200 (nm), 1900 (nm), and 2600 (nm). The absorption peak near the wavelength 1200 (nm) has a small extinction coefficient, but the absorption peaks near the wavelengths 1900 (nm) and 2600 (nm) have large extinction coefficients. Therefore, it is advisable to select an appropriate wavelength or wavelength range depending on the amount of the liquid to be measured retained in the liquid receiving portion 61 (measurement length L).

[0057] Returning to the explanation of Figure 3, the liquid receiving part 61 has an inlet 63, an outlet 64, and a measurement part 65. The inlet 63 is where the processing liquid S flowing out from the wafer W flows in. The outlet 64 discharges the processing liquid S remaining inside the liquid receiving part 61. The outlet 64 is located at a lower position than the inlet 63.

[0058] The measurement portion 65 is a portion where the treatment liquid S is measured by the concentration sensor 62. That is, the measurement portion 65 is located between the light-emitting portion 62a and the light-receiving portion 62b, and is a portion through which the infrared light IR for measurement passes. The measurement portion 65 is located at a position lower than the inlet 63 and higher than the outlet 64.

[0059] Here, in the embodiment, the processing liquid S flowing out from the wafer W undergoing liquid processing while rotating is temporarily received in a liquid receiving section 61, and the concentration of the components contained in the processing liquid S in the liquid receiving section 61 is detected by a concentration sensor 62.

[0060] This allows a sufficient measurement length L to be secured for detecting the concentration of the component with high accuracy, compared to when infrared light is irradiated onto the liquid film of the processing liquid S formed on the wafer W to detect the concentration.

[0061] Therefore, according to the embodiment, the concentrations of the components contained in the processing liquid S used in the single-wafer processing of the wafers W can be detected with high accuracy.

[0062] In the embodiment, the measurement length L is preferably 1 mm or less for a wavelength around 2000 nm, and 10 mm or more for a wavelength around 1000 nm, thereby enabling more accurate detection of the concentration of components contained in the processing solution S used in the single-wafer processing of the wafers W.

[0063] In the embodiment, the liquid receiving part 61 has an inlet 63 at a position higher than the measurement part 65, and an outlet 64 at a position lower than the measurement part 65. This allows the treatment liquid S received in the liquid receiving part 61 to always flow to the outside so as not to stagnate in the measurement part 65.

[0064] Therefore, according to the embodiment, in single-wafer processing of wafers W, the time course of the component concentration of the processing liquid S flowing out from the wafers W can be continuously detected.

[0065] In addition, in the embodiment, the sizes of the inlet 63 and the outlet 64 are preferably set appropriately so that the processing liquid S always remains in the measurement portion 65 during the liquid processing of the wafer W. This makes it possible to continuously detect the component concentrations of the processing liquid S over time from the beginning to the end of the liquid processing of the wafer W.

[0066] For example, in the liquid processing of the wafer W according to the embodiment, first, the substrate is processed with DHF, then the rinse processing is performed with DIW, and then the drying processing is performed with IPA.

[0067] In the rinsing process using DIW, the end point of the rinsing process can be detected by detecting the concentration of DHF contained in the processing liquid S with the analyzer 60. Furthermore, in the drying process using IPA, the end point of the drying process can be detected by detecting the concentration of DIW contained in the processing liquid S. That is, in this embodiment, it is possible to eliminate unnecessary time spent on the liquid processing.

[0068] Therefore, according to the embodiment, by providing the analysis device 60 in the processing unit 16, the overall processing time of the wafer W can be shortened, and the wafer W can be efficiently liquid-processed.

[0069] Furthermore, in the embodiment, since unnecessary liquid processing can be omitted, the cost of draining the used processing liquid S, the cost of preparing the processing liquid S, and the like can be reduced.

[0070] The liquid processing of the wafer W according to the embodiment is not limited to the above example, and any liquid processing in which two or more types of components are mixed in the processing liquid S can be applied.

[0071] Examples of chemical liquids used in the liquid processing of the wafer W according to the embodiment include HF (hydrofluoric acid), NH4OH (aqueous ammonia), H2SO4 (sulfuric acid), H2O2 (hydrogen peroxide), HCl (hydrochloric acid), and NH4F (ammonium fluoride).

[0072] In addition, in the liquid processing of the wafer W according to the embodiment, HNO3 (nitric acid), H3PO4 (phosphoric acid), TMAH (tetramethylammonium hydroxide), or the like may be used.

[0073] In addition, in the embodiment, the analyzer 60 may be provided with a nozzle (not shown) that discharges a cleaning liquid (such as DIW) into the liquid receiving portion 61. Then, the control unit 18 may discharge the cleaning liquid from the nozzle to clean the inside of the liquid receiving portion 61 when the wafer W is not being liquid-processed.

[0074] This makes it possible to prevent errors in concentration detection in the next liquid processing due to components remaining in the liquid receiving portion 61 in the immediately preceding liquid processing. Therefore, according to the embodiment, the concentrations of components contained in the processing liquid S used in the single-wafer processing of the wafers W can be detected with even greater accuracy.

[0075] In addition, in the embodiment, the control unit 18 may correct the sensitivity and drift of the infrared spectroscopic analysis using the measurement value of the cleaning liquid (e.g., DIW) as a calibration standard during the cleaning process of the liquid receiving unit 61. This allows the concentration of components contained in the processing liquid S used in the single-wafer processing of the wafers W to be detected with even greater accuracy.

[0076] <Variation 1> Next, various modifications of the substrate processing according to the embodiment will be described with reference to Figures 4 to 11. Figure 4 is a diagram showing an example of the configuration of an analyzer 60 according to a first modification of the embodiment.

[0077] 4, the analyzer 60 according to the first modification differs from the above embodiment in the configuration of the concentration sensor 62. Specifically, the first modification uses a concentration sensor 62 in which a light-emitting unit 62a (see FIG. 3) and a light-receiving unit 62b (see FIG. 3) are integrated.

[0078] A mirror 66 is provided on the opposite side of the measurement portion 65 in the liquid receiving portion 61 so as to face the concentration sensor 62. The mirror 66 reflects the infrared light IR emitted from the concentration sensor 62 back to the concentration sensor 62.

[0079] Even with this configuration, by measuring the processing liquid S remaining in the liquid receiving portion 61 with the concentration sensor 62, the concentration of the components contained in the processing liquid S used in the single-wafer processing of the wafers W can be detected with high accuracy.

[0080] Furthermore, in the first modification, it is possible to obtain a measurement length L that is twice the distance between the concentration sensor 62 and the mirror 66. That is, in the first modification, even if the size of the liquid receiving portion 61 is reduced, it is possible to obtain a sufficient measurement length L.

[0081] Therefore, according to the embodiment, even in a processing unit 16 in which the excess space in the collection cup 50 is small, the analyzer 60 can be installed without any problems.

[0082] <Variation 2> Fig. 5 is a diagram showing an example of the configuration of an analyzer 60 according to Modification 2 of the embodiment. As shown in Fig. 5, the analyzer 60 according to Modification 2 differs from the above embodiment in the configuration of the liquid receiving portion 61. Specifically, in Modification 2, a plurality of discharge ports 64 (two in the figure) are provided at the bottom of the liquid receiving portion 61.

[0083] This allows the processing liquid S received in the liquid receiving portion 61 to flow more smoothly to the outside without stagnating in the measurement portion 65. Therefore, according to the second modification, in single-wafer processing of wafers W, the concentration of components in the processing liquid S flowing out from the wafers W over time can be detected smoothly.

[0084] In the example of FIG. 5, an example in which two discharge ports 64 are provided in the liquid receiving portion 61 is shown, but the present disclosure is not limited to this example, and three or more discharge ports 64 may be provided in the liquid receiving portion 61.

[0085] <Variation 3> Fig. 6 is a diagram showing an example of the configuration of an analyzer 60 according to Modification 3 of the embodiment. As shown in Fig. 6, the analyzer 60 according to Modification 3 differs from the above-described embodiment in the arrangement and configuration of the liquid receiving portion 61. Specifically, in Modification 3, the liquid receiving portion 61 is provided outside the collection cup 50 and is integrated with the collection cup 50.

[0086] Specifically, an opening 50b is formed in the side wall 50a of the collection cup 50, and the opening 50b is connected to an inlet 63 of the liquid receiving portion 61. In addition, the liquid receiving portion 61 is formed on the outer side of the side wall 50a of the collection cup 50 using a part of the side wall 50a.

[0087] Furthermore, a discharge flow path 67 is connected to the discharge port 64 of the liquid receiving portion 61 , and the discharge flow path 67 is connected to the liquid discharge port 51 of the recovery cup 50 .

[0088] Even with this configuration, the concentration of the components contained in the processing liquid S used in the single-wafer processing of the wafers W can be accurately detected by measuring the processing liquid S remaining in the liquid receiving portion 61 with the concentration sensor 62 (see Figure 3).

[0089] Furthermore, in the third modification, even in a processing unit 16 in which there is no excess space in the collection cup 50, the analyzer 60 can be installed without any problems.

[0090] In this modification 3, liquid receiving portion 61 and the like may be configured to be detachable. In this case, when liquid receiving portion 61 and the like is to be removed, opening 50b formed in collection cup 50 may be closed with a lid or the like.

[0091] <Variation 4> 7 and 8 are diagrams showing an example of the configuration of an analyzer 60 according to Modification 4 of the embodiment. As shown in Fig. 7, in the analyzer 60 according to Modification 4, an inlet 63 and a measurement portion 65 are provided spaced apart from each other.

[0092] Specifically, in Modification 4, a U-shaped liquid supply passage 80 is provided downstream of a funnel-shaped inlet 63. The downstream side of the liquid supply passage 80 is connected to, for example, the bottom surface of a container portion 81 in which a measurement portion 65 and an outlet 64 are provided.

[0093] The container portion 81 is configured to be able to store the treatment liquid S supplied from the liquid supply passage 80, has an outlet 64 on the top surface, and has a measured portion 65 (i.e., concentration sensor 62) provided at a position lower than the outlet 64.

[0094] In the fourth modification, as shown in FIG. 7, the processing liquid S flowing out from the wafer W undergoing liquid processing while rotating is first received at the inlet 63 of the liquid receiving portion 61, and the processing liquid S is then supplied to the container portion 81 via the liquid supply passage 80.

[0095] The concentration of the component contained in the treatment liquid S is detected by the concentration sensor 62 in the measurement portion 65 provided in the container portion 81. Furthermore, the treatment liquid S stored in the container portion 81 is discharged so as to overflow (overflow) from the discharge port 64 on the top surface.

[0096] By adopting such a configuration, in Modification 4, it is possible to align the movement direction of the bubbles B contained in the treatment liquid S with the movement direction of the treatment liquid S in the container 81. That is, in Modification 4, it is possible to prevent the bubbles B from remaining in the treatment liquid S in the container 81.

[0097] Therefore, according to variant example 4, it is possible to prevent the infrared light IR from being obstructed by the bubbles B in the measured portion 65, and therefore it is possible to detect the concentration of the components contained in the processing liquid S used in the single-wafer processing of the wafer W with even greater accuracy.

[0098] In addition, in the fourth modification, it is preferable that the inlet 63 is provided at a higher position than the outlet 64. This makes it possible to suppress the discharge of the processing liquid S from the container 81 even when the supply of the processing liquid S flowing out from the wafer W is stopped, as shown in FIG.

[0099] That is, in variant example 4, by positioning the inlet 63 at a higher position than the outlet 64, it is possible to prevent the processing liquid S from running out in the measurement section 65 regardless of the amount of processing liquid S flowing in from the wafer W.

[0100] The liquid receiving section 61 of the fourth modification may have a discharge flow path 82 that connects the liquid sending passage 80 and the drain section DR, and a valve 83 that is provided in the discharge flow path 82.

[0101] This allows the processing liquid S remaining in the liquid receiving portion 61 from the immediately preceding liquid processing to be discharged, thereby preventing errors in the concentration detection in the next liquid processing from occurring due to the processing liquid S. Therefore, according to the fourth modification, the concentrations of components contained in the processing liquid S used in the single-wafer processing of the wafers W can be detected with even greater accuracy.

[0102] <Variation 5> 9 is a diagram showing an example of the configuration of an analyzer 60 according to Modification 5 of the embodiment. As shown in Fig. 9, the analyzer 60 according to Modification 5 differs from the above-described embodiment in the arrangement and configuration of the liquid receiving portion 61. Specifically, the liquid receiving portion 61 according to Modification 5 has a ring portion 68 and a weir portion 69.

[0103] The ring portion 68 is an annular portion that is supported by the holder 31 and is arranged along the edge of the wafer W in a plan view. That is, in the fifth modification, the ring portion 68 rotates together with the holder 31 and the wafer W. Furthermore, the ring portion 68 is arranged at least outside the edge of the wafer W.

[0104] The upper surface of ring portion 68 is corrosion-resistant to various chemical solutions and has the function of reflecting infrared light IR. For example, ring portion 68 is made of a ring-shaped reflective material (such as a metal material or a mirror material), and the surface of such a reflective material is covered with a corrosion-resistant transparent material (such as Teflon (registered trademark)). Ring portion 68 may also be made of a corrosion-resistant reflective material (such as stainless steel or a gold-plated material).

[0105] Weir portion 69 is disposed on the edge of ring portion 68 and blocks processing liquid S (see FIG. 3) flowing out from wafer W. Weir portion 69 protrudes from the upper surface of ring portion 68 by a predetermined length (for example, about 1 mm to 5 mm).

[0106] In the fifth modification, a concentration sensor 62, in which a light-emitting unit 62a (see FIG. 3) and a light-receiving unit 62b (see FIG. 3) are integrated, is disposed above the treatment liquid S that is held back by a dam unit 69. The concentration sensor 62 is supported by, for example, an arm 42a or an arm 42b (arm 42b in the drawing).

[0107] In the fifth modification, the processing liquid S flowing from the rotating wafer W and being blocked by the dam portion 69 is measured by the concentration sensor 62 located above the processing liquid S. Even in this configuration, by blocking the processing liquid S with the dam portion 69 at a predetermined height, it is possible to ensure a sufficient measurement length L for accurately detecting the component concentration.

[0108] Therefore, according to the fifth modification, the concentrations of the components contained in the processing liquid S used in the single-wafer processing of the wafers W can be detected with high accuracy.

[0109] Furthermore, in the fifth modification, the ring portion 68 and the weir portion 69 rotate together with the wafer W, so that the processing liquid S received by the weir portion 69 can always flow outward without stagnating near the weir portion 69.

[0110] Therefore, according to the fifth modification, in single wafer processing of the wafers W, the concentration of the components of the processing liquid S flowing out from the wafers W can be detected continuously over time.

[0111] <Variation 6> 10 is a diagram showing an example of the configuration of an analyzer 60 according to Modification 6 of the embodiment. As shown in FIG. 10, the analyzer 60 according to Modification 6 differs from the above-described Modification 5 in the configuration of the liquid receiving portion 61.

[0112] Specifically, in liquid receiving portion 61 according to Modification 6, ring portion 68 is supported by collection cup 50 rather than by holder 31. That is, in Modification 6, ring portion 68 is fixed and does not rotate.

[0113] Moreover, in Modification 6, two dam portions 69 (hereinafter also referred to as dam portions 69A and 69B) are provided on ring portion 68. Weir portion 69A is disposed on the edge of ring portion 68 and blocks processing liquid S (see FIG. 3) flowing out from wafer W to prevent it from flowing outward.

[0114] Weir portion 69B is disposed between weir portion 69A and the edge of wafer W, and blocks the processing liquid S from flowing inward from wafer W. Weir portions 69A and 69B protrude a predetermined length (for example, about 1 mm to 5 mm) from the upper surface of ring portion 68.

[0115] That is, in the sixth modification, the processing liquid S flowing out from the rotating wafer W is stored in a recess formed by the ring portion 68, the weir portion 69A, and the weir portion 69B. Then, the concentration sensor 62 measures the processing liquid S stored in the recess.

[0116] Even with this configuration, by storing the processing liquid S in a recess of a predetermined depth, it is possible to ensure a sufficient measurement length L for accurately detecting the component concentration. Therefore, according to Modification 6, it is possible to accurately detect the concentration of the component contained in the processing liquid S used in single-wafer processing of wafers W.

[0117] In addition, in Modification 6, a discharge flow path 70 may be connected to the recess formed by the ring portion 68, the weir portion 69A, and the weir portion 69B, and an ejector 71 may be provided in the discharge flow path 70. The ejector 71 is an example of a forced discharge portion. The ejector 71 forcibly discharges the processing liquid S stored in the recess through the discharge flow path 70.

[0118] This allows the processing liquid S stored in the recess to constantly flow outward without stagnating within the recess. Therefore, according to the sixth modification, in single-wafer processing of wafers W, the concentration of components in the processing liquid S flowing out from the wafers W can be continuously detected over time.

[0119] In the example of Figure 10, an example is shown in which the processing liquid S stored in the recess is forcibly discharged by the ejector 71, but the present disclosure is not limited to such an example, and the processing liquid S stored in the recess may be forcibly discharged by a member other than the ejector 71.

[0120] Furthermore, in the above-described fifth and sixth modifications, examples have been shown in which the dam portion 69 is provided on the ring portion 68, but the present disclosure is not limited to such examples, and a recess may be formed on the upper surface of the ring portion 68.

[0121] This also allows the processing liquid S to be stored in a recess of a predetermined depth, making it possible to ensure a sufficient measurement length L for accurately detecting the component concentration, thereby enabling the concentration of the components contained in the processing liquid S used in single-wafer processing of wafers W to be accurately detected.

[0122] <Variation 7> 11 is a schematic diagram showing an example of a specific configuration of a processing unit 16 according to Modification 7 of the embodiment. As shown in Fig. 11, Modification 7 is provided with, in addition to the analyzer 60 described in the above embodiment, another concentration sensor 62A that detects the component concentration of the processing liquid S (see Fig. 3) on the surface of the wafer W.

[0123] Concentration sensor 62A has a light-emitting unit 62a (see FIG. 3) and a light-receiving unit 62b (see FIG. 3) integrated together, and is disposed above wafer W held by holder 31. Concentration sensor 62A is supported by, for example, arm 42a or arm 42b (arm 42b in the drawing).

[0124] The concentration sensor 62A detects the component concentration of the processing liquid S on the surface of the wafer W by reflecting infrared light IR on the surface of the wafer W made of silicon.

[0125] In Modification 7, it is preferable that control unit 18 (see FIG. 1) determines the end point of the liquid treatment based on the detection results of the component concentrations by concentration sensor 62 (see FIG. 3) provided in analyzer 60 and the detection results of the component concentrations by concentration sensor 62A. This allows the end point of the liquid treatment to be determined with high accuracy.

[0126] The analyzing apparatus 60 according to the embodiment includes a liquid receiving section 61 and a concentration sensor 62. The liquid receiving section 61 receives the processing liquid S flowing out from a substrate (wafer W) that is being subjected to liquid processing while rotating. The concentration sensor 62 detects the concentration of components contained in the processing liquid S that remains in the liquid receiving section 61. This makes it possible to accurately detect the concentration of components contained in the processing liquid S used in the single-wafer processing of the wafers W.

[0127] Moreover, in the analyzer 60 according to the embodiment, the liquid receiving section 61 has an inlet 63, an outlet 64, and a measurement section 65. The inlet 63 receives the processing liquid S flowing out from the substrate (wafer W). The outlet 64 is located at a lower position than the inlet 63 and discharges the processing liquid S that accumulates inside. The measurement section 65 is located at a lower position than the inlet 63 and higher than the outlet 64, and the processing liquid S is measured by the concentration sensor 62. This makes it possible to continuously detect the component concentration of the processing liquid S flowing out from the wafer W over time during single-wafer processing of the wafer W.

[0128] Furthermore, in the analyzer 60 according to the embodiment, the sizes of the inlet 63 and the outlet 64 are set so that the processing liquid S always remains in the measurement portion 65 during the liquid processing of the substrate (wafer W). This makes it possible to continuously detect the component concentrations of the processing liquid S over time from the beginning to the end of the liquid processing of the wafer W.

[0129] Furthermore, in the analyzer 60 according to the embodiment, a plurality of outlets 64 are provided in the liquid receiving section 61. This allows smooth detection of the time course of the component concentration of the processing liquid S flowing out from the wafer W during single-wafer processing of the wafer W.

[0130] Furthermore, in the analyzer 60 according to the embodiment, the liquid receiving portion 61 is provided outside the collection cup 50 that receives the processing liquid S flowing out from the substrate (wafer W). This allows the analyzer 60 to be installed without any problems even in a processing unit 16 that does not have any excess space in the collection cup 50.

[0131] Moreover, in the analyzer 60 according to the embodiment, the liquid receiving section 61 has an inlet 63, a liquid delivery passage 80, a container section 81, an outlet 64, and a measurement section 65. The inlet 63 receives the processing liquid S flowing out from the substrate (wafer W). The liquid delivery passage 80 is provided downstream of the inlet 63 and has a U-shape. The container section 81 is provided downstream of the liquid delivery passage 80 and stores the processing liquid S. The outlet 64 is provided on the upper surface of the container section 81 and discharges the processing liquid S remaining in the container section 81. The measurement section 65 is located at a lower position in the container section 81 than the outlet 64, and the processing liquid S is measured by the concentration sensor 62. This allows the concentration of components contained in the processing liquid S used in single-wafer processing of the wafers W to be detected with greater accuracy.

[0132] Furthermore, in the analyzer 60 according to the embodiment, the inlet 63 is positioned higher than the outlet 64. This makes it possible to prevent the processing liquid S from running out in the measurement portion 65, regardless of the amount of processing liquid S flowing in from the wafer W.

[0133] Furthermore, in the analyzer 60 according to the embodiment, the liquid receiving portion 61 has a ring portion 68 and a weir portion 69. The ring portion 68 is disposed along the edge of the substrate (wafer W) at least outside the edge. The weir portion 69 is disposed on the edge of the ring portion 68 and blocks the processing liquid S. This allows the concentration of components contained in the processing liquid S used in the single-wafer processing of the wafer W to be detected with high accuracy.

[0134] Furthermore, in the analyzer 60 according to the embodiment, the concentration sensor 62 detects the processing liquid S accumulating near the weir portion 69 from above. This allows the concentration of components contained in the processing liquid S used in the single-wafer processing of the wafers W to be detected with high accuracy.

[0135] Furthermore, in the analyzer 60 according to the embodiment, the ring part 68 rotates together with the substrate (wafer W) during liquid processing. This allows the time-dependent change in the concentration of components in the processing liquid S flowing out from the wafer W to be continuously detected during single-wafer processing of the wafer W.

[0136] In the analyzer 60 according to the embodiment, the ring portion 68 is fixed, and the liquid receiving portion 61 has a discharge flow path 70 connected to the vicinity of the weir portion 69, and a forced discharge portion (ejector 71) provided in the discharge flow path 70. This makes it possible to continuously detect the concentration of components of the processing liquid S flowing out from the wafer W over time during single-wafer processing of the wafer W.

[0137] Furthermore, in the analysis apparatus 60 according to the embodiment, the concentration sensor 62 detects the concentration of the component by infrared spectroscopy, which allows the concentration of the component contained in the processing liquid S flowing out from the wafer W to be detected accurately and simply.

[0138] Although the embodiments of the present disclosure have been described above, the present disclosure is not limited to the above-described embodiments, and various modifications are possible without departing from the spirit of the present disclosure.

[0139] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0140] W wafer (an example of a substrate) 1. Substrate Processing System 16 Processing Unit 50 Collection Cup 60 Analyzer 61 Liquid receiving part 62 Concentration sensor 63 Inlet 64 Outlet 65 Part to be measured 68 Ring section 69, 69A, 69B Weir 70 Discharge flow path 71 Ejector (an example of a forced ejection part) 80 Liquid transfer passage 81 Container section S processing solution

Claims

1. a liquid receiving portion that receives the processing liquid flowing out from the substrate being subjected to the liquid processing while rotating; a concentration sensor for detecting the concentration of a component contained in the treatment liquid remaining in the liquid receiving portion; Equipped with The liquid receiving portion is an inlet into which the processing liquid flowing out from the substrate flows; an outlet that is disposed at a position lower than the inlet and that discharges the treatment liquid that has accumulated inside; a measurement part that is disposed at a position lower than the inlet and higher than the outlet, and in which the concentration of the treatment liquid is measured by the concentration sensor; and The sizes of the inlet and the outlet are set so that the processing liquid always remains in the measurement portion during liquid processing of the substrate. Analyzer.

2. The discharge port is provided in a plurality of the liquid receiving portions. The analytical device of claim 1 .

3. The liquid receiving portion is A recovery cup is provided outside the recovery cup to receive the processing liquid flowing out from the substrate. The analytical device according to claim 1 or 2.

4. A liquid receiving portion that receives processing liquid flowing out from a substrate that is being subjected to liquid processing while rotating; a concentration sensor for detecting the concentration of a component contained in the treatment liquid remaining in the liquid receiving portion; Equipped with The liquid receiving portion is an inlet into which the processing liquid flowing out from the substrate flows; a U-shaped liquid feed passage provided downstream of the inlet; a container portion provided downstream of the liquid feed passage and configured to store the treatment liquid; a discharge port provided on an upper surface side of the container portion and configured to discharge the treatment liquid remaining in the container portion; a measurement portion that is disposed in the container portion at a position lower than the outlet, and in which the treatment liquid is measured by the concentration sensor; An analytical device having:

5. The inlet is positioned higher than the outlet. The analytical device according to claim 4 .

6. A liquid receiving portion that receives processing liquid flowing out from a substrate that is being subjected to liquid processing while rotating; a concentration sensor for detecting the concentration of a component contained in the treatment liquid remaining in the liquid receiving portion; Equipped with The liquid receiving portion is a ring portion disposed along an edge of the substrate at least outside the edge; a dam portion disposed on an edge of the ring portion and damming the treatment liquid; An analytical device having:

7. The concentration sensor detects the treatment liquid remaining near the weir portion from above. The analytical device according to claim 6 .

8. The ring portion rotates together with the substrate during liquid processing. The analytical device according to claim 6 or 7.

9. The ring portion is fixed, The liquid receiving portion has a discharge flow path connected to the vicinity of the weir portion, and a forced discharge portion provided in the discharge flow path. The analytical device according to claim 6 or 7.

10. The concentration sensor detects the concentration of the component by infrared spectroscopy. The analytical device according to any one of claims 1 to 9.

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