Semiconductor manufacturing equipment and semiconductor manufacturing method

Abstract

To provide a semiconductor manufacturing apparatus and a semiconductor manufacturing method, which are capable of detecting the amount of wires actually fed without using a fiber sensor.SOLUTION: A semiconductor manufacturing apparatus includes a US horn, a sensor, a memory, and a processor. The sensor detects travel amounts of the US horn in X, Y and Z axis directions. The memory stores a wire bond program. The processor calculates the feed amount of metal wires based on the travel amounts, according to the wire bond program. The US horn stops the feed of the wires when the travel amounts coincide with the scheduled usage of the metal wires, and executes wire bonding.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor manufacturing apparatus and a semiconductor device manufacturing method. [Background technology]

[0002] When wire bonding between a semiconductor element and a lead frame, it is necessary to achieve the desired wire shape while suppressing wire bending, etc. Therefore, there is a demand for technology that can keep the load on the wire constant by keeping the wire feed rate constant.

[0003] In order to keep the wire payout amount constant, it is necessary to detect the actual wire payout amount. For example, Patent Document 1 discloses a technique for detecting the actual wire payout amount. Meanwhile, a method using a fiber sensor is known as a conventional method for detecting the actual wire payout amount. This method uses the reflection of light within a fiber cable to detect the presence or absence of a wire. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 07-335687 Summary of the Invention [Problem to be solved by the invention]

[0005] However, with the above method, the sensitivity of the fiber sensor can be reduced due to factors such as contamination of the wire path, which can lead to problems with wire delivery.

[0006] In order to solve the above-mentioned problems, a first object of the present disclosure is to provide a semiconductor manufacturing apparatus that can detect the amount of wire actually fed out without using a fiber sensor.

[0007] A second object of the present disclosure is to provide a semiconductor manufacturing method that can detect the amount of wire that has actually been fed out without using a fiber sensor. [Means for solving the problem]

[0008] A first aspect of the present disclosure is preferably a semiconductor manufacturing apparatus including a US horn, a sensor, a memory, and a processor, wherein the sensor is configured to detect the amount of movement of the US horn in the X, Y, and Z axis directions, the memory is configured to store a wire bond program, the processor is configured to calculate the amount of metal wire to be fed based on the amount of movement in accordance with the wire bond program, and the US horn stops feeding the wire when the amount of movement matches the planned amount of metal wire to be used, and performs wire bonding.

[0009] A first aspect of the present disclosure is a wireless communication system including a US horn, a sensor, a memory, and A chip recognition camera, A semiconductor manufacturing apparatus including a processor, wherein a sensor is configured to detect movement amounts of a US horn in X, Y, and Z axis directions, and a memory is configured to store a wire bond program; The chip recognition camera is configured to detect tilts of the semiconductor element and the lead frame mounted on the semiconductor device; The processor determines the movement amount according to the wire bond program. and tilt The US horn is configured to calculate the amount of metal wire delivered based on the Delivery amount It is preferable that the semiconductor manufacturing apparatus is configured to stop feeding of the wire when the amount of metal wire to be used matches the amount of metal wire to be used, and then perform wire bonding. [Effects of the Invention]

[0010] A second aspect of the present disclosure is a semiconductor manufacturing method performed by a semiconductor manufacturing apparatus including a sensor, a US horn, a memory storing a wire bond program, and a processor, the method including: detecting the amount of movement of the US horn in the X, Y, and Z axis directions by the sensor; Detecting tilt of a semiconductor element and a lead frame mounted on a semiconductor device; The processor determines the movement amount according to the wire bond program. and tiltCalculating the amount of metal wire delivered based on the above, and the US horn, Delivery amount and stopping the feeding of the wire when the amount of the metal wire to be used matches the amount of the metal wire to be used, and then performing wire bonding. [Brief explanation of the drawings]

[0011] [Figure 1] FIG. 1 illustrates the operating parts of a wire bonding facility. [Figure 2] FIG. 1 is a diagram showing a part of a semiconductor device in which metal wires are wired. [Figure 3] 1A-1C illustrate the operation of a capillary for shaping a metal wire. [Figure 4] FIG. 1 is a diagram showing a part of a semiconductor device wired with a plurality of metal wires. [Figure 5] FIG. 2 is a diagram illustrating a device wire supply unit according to the first embodiment of the present disclosure. [Figure 6] 4 is a flowchart showing a wire bonding process according to the first embodiment of the present disclosure. [Figure 7] 10 is a flowchart showing a wire bonding process according to a second embodiment of the present disclosure. [Figure 8] 11 is a flowchart showing a wire bonding process according to a third embodiment of the present disclosure. [Figure 9] 10 is a flowchart showing a wire bonding process according to a fourth embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0012] Embodiment 1 [Wire bonding process overview] First, we will explain wire bonding of metal wire. Figure 1 shows the operating section of wire bonding equipment. The wire bonding operating section includes a US horn 1. The US horn 1 is connected to a capillary 2, which is configured to feed out a metal wire 3. The metal wire 3 is made of a metal with low electrical resistance, such as gold, silver, copper, or aluminum.

[0013] The first process of wire bonding is a spark action that forms a fabricated adhesive (FAB) at the tip of the metal wire. For example, a spark rod 5 discharges electricity toward the tip of the metal wire 3, melting the tip of the metal wire 3 and forming a fabricated adhesive (FAB) 4.

[0014] 2 is a diagram showing a portion of a semiconductor device in which metal wires are wired. The semiconductor device includes a lead frame 8. The lead frame 8 has a complex shape. Therefore, if the lead frame 8 is not fixed during wire bonding, the metal wires 3 cannot be connected properly.

[0015] A semiconductor element 6 is bonded to the lead frame 8 using a die bond adhesive 7. The semiconductor element 6 can be, for example, an IC element having a length of 3.5 mm or less, a width of 7 mm or less, and a thickness of 0.5 mm or less. A fabricated adhesive (FAB) 4a is bonded to the semiconductor element 6, and a metal wire 3a having the FAB 4a at its tip is connected to the lead frame 8a.

[0016] The semiconductor device also includes a sensor 20. The sensor 20 detects the amount of movement of the US horn or the like. The amount of movement may be detected using, for example, image processing or other processing. The semiconductor device also includes a memory 30. The memory 30 stores a wire bond program to be executed by a processor 40. The processor 40 performs arithmetic processing in accordance with the wire bond program. The semiconductor device also includes a chip recognition camera 50. The chip recognition camera 50 can detect tilts of the semiconductor element 6 and lead frame 8 that occur due to production variations.

[0017] The second process of wire bonding is the operation of bonding the fabricated object to the electrodes of the semiconductor element. For example, in the case of the semiconductor device shown in Figure 2, the fabricated object 4 is first moved to a predetermined position by vertical movement of the capillary 2 in the Z direction and reciprocal movement in the X and Y directions. Then, the fabricated object 4 is pressed against the semiconductor element 6 and ultrasonic waves (US) are applied at the same time, thereby forming a fabricated object 4a bonded to the semiconductor element 6.

[0018] 3 is a diagram showing the operation of a capillary for forming a metal wire. A metal wire 3a is bonded via a fabrication breaker (FAB) 4a onto a semiconductor element 6. The position where a metal wire 3b will be wired via a fabrication breaker (FAB) 4b is indicated by a dashed line.

[0019] Furthermore, the path that must be taken by the capillary 2 to form the wiring of the metal wire 3b is shown by a dotted line as a trajectory image 11. That is, the metal wire 3b is wired at the position of the dashed line in the following manner. First, after the FAB 4b is formed on the semiconductor element 6, the capillary 2 is operated as shown in the trajectory image 11. Then, the capillary 2 is moved above the power semiconductor element 13, which will be described later, and the metal wire 3b is joined.

[0020] The third process of wire bonding is the operation of forming the wiring of the metal wire with the fab at its tip. For example, in the case of the semiconductor device shown in Figure 3, after completing the bonding of the fab 4b, the capillary 2 repeats minute movements in the Z direction and the X and Y directions, as shown in the trajectory image 11. As a result, when the metal wire 3b is bonded to the power semiconductor element 13 at the end opposite the fab 4b in a later process, the wiring of the metal wire 3b is formed as shown by the dashed line.

[0021] The space 12 indicates the space that exists between the trajectory image 11 and the metal wire 3a, and indicates that the tip of the capillary 2 follows a path that does not collide with other wiring.

[0022] 4 is a diagram showing a portion of a semiconductor device wired with multiple metal wires. Multiple metal wires, such as metal wire 3a with FAB 4a at its tip and metal wire 3b with FAB 4b at its tip, are bonded to a semiconductor element 6. One end of metal wire 3a opposite FAB 4a is bonded to lead frame 8a. One end of metal wire 3b opposite FAB 4b is bonded to a power semiconductor element 13. The power semiconductor element 13 is bonded to lead frame 8b with a bonding material (not shown).

[0023] The metal wire 3b is generally trapezoidal in shape to prevent short-circuiting to other electrodes. To achieve this shape, the XY stage and Z axis are operated.

[0024] The fourth process of wire bonding is the operation of joining the opposite end of the metal wire with the FAB at the tip. For example, in the case of the semiconductor device shown in Figure 4, once the formation of the metal wire 3b is complete, the capillary 2 moves to a predetermined position on the power semiconductor element 13. Then, by pressing the metal wire 3b against the power semiconductor element 13 and simultaneously applying US, the metal wire 3b can be joined to the power semiconductor element 13. The above four steps are an overview of the wire bonding process.

[0025] [Outline of the first embodiment] 5 is a diagram showing the device wire supply unit according to the first embodiment of the present disclosure. The device wire supply unit includes a wire spool 16. The wire spool 16 has a metal wire 3 therein and a wire spool motor 17 thereon. The wire spool motor 17 is, for example, a stepping motor or a servo motor, and is readily available. When the wire spool motor 17 is driven, the wire spool 16 rotates, thereby pushing out the metal wire 3.

[0026] The device wire supply unit also includes a wire guide 14. The metal wire 3 is pushed out along the wire guide 14. The device wire supply unit also includes an air blower 15. The air blower 15 blows wire tension air to the metal wire 3 to suppress slack in the metal wire 3.

[0027] 6 is a flowchart showing the wire bonding process according to the first embodiment of the present disclosure. First, in step 100, an internal calculation is performed to determine the amount of metal wire to be used. Details of this internal calculation will be described later. Next, in step 102, a lead frame is mounted on the device. Subsequently, in step 104, wire bonding begins.

[0028] Next, in step 106, the metal wire is let out so that the planned amount to be used and the actual amount to be let out are equal. That is, the actual amount of metal wire let out is measured in real time using the same method as the internal calculation described below. Then, when the actual amount of metal wire let out is equal to the planned amount to be used, the wire spool motor is stopped. At this time, the metal wire 3 is let out at a constant speed.

[0029] Subsequently, wire bonding is performed in step 108. This allows wire bonding to be performed using the exact amount of metal wire that is planned to be used.

[0030] In this embodiment, first, the wire length to be used for each package is internally calculated. Then, the calculation result is synchronized with the wire bonding operation. That is, by driving the wire spool motor 17 based on the calculation result, the required amount of metal wire 3 can be fed and wire bonding can be performed.

[0031] [Details of internal calculations in the first embodiment] The internal calculations will now be described in detail. The semiconductor manufacturing equipment according to this embodiment is equipped with sensors that detect the amount of movement of each unit in the X, Y, and Z axes. The amount of movement detected by the sensors is sent to a wire bonding program dedicated to the unit to be wire bonded. Based on the amount of movement sent, the wire bonding program calculates the planned amount of metal wire to be used and the actual amount of wire delivered.

[0032] An example of a unit that detects the amount of movement is the US horn 1. Other examples include the capillary 2, the spark rod 5, an XY stage for moving the chip recognition camera (described later), and a Z axis for moving the US horn 1 and capillary 2 up and down to perform wire bonding.

[0033] Furthermore, in this embodiment, the tilt of the semiconductor element 6 and the lead frame 8 caused by production variations can be detected by the chip recognition camera. By adding the data of the detected tilt, it becomes possible to calculate the planned amount of metal wire to be used and the actual amount of metal wire delivered more precisely.

[0034] The calculation of the planned amount of metal wire to be used in step 100 is performed based on the planned amount of movement of each unit part and the detected inclination of each unit part, etc. The planned amount of movement of each unit part can be calculated in advance from, for example, a design drawing of the semiconductor device, etc. Meanwhile, the actual amount of metal wire to be fed in step 106 is performed based on the detected amount of movement of each unit part and the detected inclination of each unit part, etc.

[0035] This embodiment makes it possible to detect the amount of wire actually fed without using a fiber sensor. As a result, it is possible to reduce erroneous wire feeding and improve the reproducibility of the wire shape. In other words, it is possible to improve the stability of wire bonding. Furthermore, since it is possible to reduce wire feeding defects, it is possible to improve profit margins through cost improvements.

[0036] Embodiment 2 7 is a flowchart showing a wire bonding process according to a second embodiment of the present disclosure. The second embodiment differs from the first embodiment in that the planned amount of metal wire to be used is manually input instead of being internally calculated. Note that steps 102, 104, and 108 are the same as those in FIG. 6, and therefore will not be described here.

[0037] Prior to step 102, in step 110, the planned amount of metal wire to be used is input. For example, the planned amount of metal wire to be used is calculated in advance from a design drawing of the semiconductor device, etc. Based on the calculation result, the planned amount of metal wire to be used is manually input as a parameter of the device.

[0038] Then, in step 106, the wire spool motor 17 is driven based on the input information on the amount of metal wire used. As a result, the required amount of metal wire 3 can be fed out to perform wire bonding, just like in the first embodiment.

[0039] In this embodiment, the amount of metal wire to be used is manually input, which reduces the amount of data to be calculated internally, thereby reducing the time and amount of data required for calculation.

[0040] Embodiment 3 8 is a flowchart showing a wire bonding process according to a third embodiment of the present disclosure. The third embodiment differs from the first embodiment in that the flow rate of wire tension air is adjusted. Note that steps 100 to 108 are the same as those in FIG. 6, and therefore a description thereof will be omitted.

[0041] In step 112, the flow rate of the wire tension air is adjusted. That is, the flow rate of the wire tension air being blown out by the air blower 15 is controlled in parallel with the metal wire 3 being blown out at a constant speed.

[0042] In this embodiment, the flow rate of the wire tension air delivered by the air delivery device 15 is controlled to more appropriately suppress slack in the delivered metal wire 3. This further improves the stability of wire bonding.

[0043] Embodiment 4 9 is a flowchart showing a wire bonding process according to a fourth embodiment of the present disclosure. The fourth embodiment differs from the third embodiment in that one unit of metal wire is fed at a time. Note that steps 100 to 104, 108, and 112 are the same as those in FIG. 8, and therefore their explanation will be omitted.

[0044] In step 114, one unit of metal wire is fed so that the planned amount to be used is equal to the actual amount fed. That is, an amount of metal wire 3 equal to the planned amount to be used is fed in advance all at once. Then, in step 112, wire tension air is fed to suppress slack.

[0045] In this embodiment, the metal wire is actually fed one unit at a time, which makes it possible to further improve the stability of wire bonding in a manner different from that of the third embodiment.

[0046] Below, the aspects of the present disclosure will be summarized as appendices.

[0047] (Appendix 1) A semiconductor manufacturing apparatus including a US horn, a sensor, a memory, and a processor, The sensor is configured to detect the amount of movement of the US horn in the X, Y, and Z axis directions, the memory is configured to store a wirebond program; the processor is configured to calculate a feed amount of the metal wire based on the movement amount in accordance with the wire bond program; The US horn is configured to stop feeding the wire when the amount of movement matches the amount of metal wire to be used, and then perform wire bonding. Semiconductor manufacturing equipment. (Appendix 2) The processor is configured to calculate the expected usage amount in advance. 2. The semiconductor manufacturing apparatus according to claim 1. (Appendix 3) The processor is configured to receive the pre-calculated, manually entered planned usage amount. 2. The semiconductor manufacturing apparatus according to claim 1. (Appendix 4) Equipped with a chip recognition camera, the chip recognition camera is configured to detect tilts of a semiconductor element and a lead frame mounted on the semiconductor device; The processor is configured to calculate a delivery amount of the metal wire based on the movement amount and the tilt. 4. A semiconductor manufacturing apparatus according to any one of claims 1 to 3. (Appendix 5) Equipped with a chip recognition camera, the chip recognition camera is configured to detect tilts of a semiconductor element and a lead frame mounted on the semiconductor device; The processor is configured to calculate a planned amount of metal wire to be used based on the amount of movement and the tilt. 3. The semiconductor manufacturing apparatus according to claim 2. (Appendix 6) Equipped with an air blower that blows out wire tension air and controls the flow rate of the wire tension air 6. A semiconductor manufacturing apparatus according to any one of claims 1 to 5. (Appendix 7) 7. The semiconductor manufacturing apparatus according to claim 1, wherein the metal wire is fed at a constant speed. (Appendix 8) 8. The semiconductor manufacturing apparatus according to claim 1, wherein the metal wire is fed in a batch in an amount required for one unit. (Appendix 9) A semiconductor manufacturing method performed by a semiconductor manufacturing apparatus including a sensor, a US horn, a memory storing a wire bond program, and a processor, the method comprising: The sensor detects the amount of movement of the US horn in the X, Y, and Z axis directions; the processor calculates the amount of metal wire fed based on the amount of movement in accordance with the wire bonding program; When the amount of movement of the US horn matches the amount of metal wire to be used, the US horn stops feeding the wire and performs wire bonding. A semiconductor manufacturing method comprising: [Explanation of symbols]

[0048] 3, 3a, 3b Metal wire 6. Semiconductor elements 8, 8a, 8b Lead frame 15 Air blower 20 sensors 30 memory 40 processors 50 Chip Recognition Camera

Claims

1. A semiconductor manufacturing device comprising a US horn, a sensor, a memory, a chip recognition camera, and a processor, The sensor is configured to detect the amount of movement of the US horn in the X, Y, and Z axis directions; the memory is configured to store a wirebond program; the chip recognition camera is configured to detect tilts of a semiconductor element and a lead frame mounted on the semiconductor device; the processor is configured to calculate a feed amount of the metal wire based on the movement amount and the tilt in accordance with the wire bond program; The US horn is configured to stop feeding the wire when the feeding amount matches the planned amount of metal wire to be used, and then perform wire bonding. Semiconductor manufacturing equipment.

2. A semiconductor manufacturing device comprising a US horn, a sensor, a memory, a chip recognition camera, and a processor, The sensor is configured to detect the amount of movement of the US horn in the X, Y, and Z axis directions; the memory is configured to store a wirebond program; the chip recognition camera is configured to detect tilts of a semiconductor element and a lead frame mounted on the semiconductor device; the processor: calculating in advance a planned amount of metal wire to be used based on the amount of movement and the inclination; calculating a feed amount of the metal wire based on the movement amount in accordance with the wire bonding program; configured to run, The US horn is configured to stop feeding the wire when the feeding amount matches the planned amount to be used, and then perform wire bonding. Semiconductor manufacturing equipment.

3. A semiconductor manufacturing method performed by a semiconductor manufacturing apparatus including a sensor, a US horn, a memory storing a wire bond program, and a processor, the method comprising: The sensor detects the amount of movement of the US horn in the X, Y, and Z axis directions; Detecting tilt of a semiconductor element and a lead frame mounted on a semiconductor device; the processor calculates the amount of metal wire fed based on the amount of movement and the tilt in accordance with the wire bonding program; The US horn stops feeding the wire when the feeding amount matches the planned amount of metal wire to be used, and then wire bonding is performed. A semiconductor manufacturing method comprising:

4. A semiconductor manufacturing method performed by a semiconductor manufacturing apparatus including a sensor, a US horn, a memory storing a wire bond program, and a processor, the method comprising: The sensor detects the amount of movement of the US horn in the X, Y, and Z axis directions; Detecting tilt of a semiconductor element and a lead frame mounted on a semiconductor device; the processor: calculating in advance a planned amount of metal wire to be used based on the amount of movement and the inclination; calculating a feed amount of the metal wire based on the movement amount in accordance with the wire bonding program; The US horn stops feeding the wire when the feeding amount matches the planned amount to be used, and then wire bonding is performed. A semiconductor manufacturing method comprising:

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