Substrate processing apparatus and substrate processing method

Abstract

To provide a technique capable of reducing damage on a processing container at generation of plasma.SOLUTION: A substrate processing apparatus comprises: a processing container which stores a substrate and processes the substrate; a substrate supporting part which is provided in the processing container and supports the substrate; a plasma source part which generates plasma in a plasma processing region between the substrate supporting part and an opposed surface opposed to the substrate supporting part; and a plurality of processing gas nozzles which spray gas to the plasma processing region. The plurality of processing gas nozzles include: a mixed gas nozzle which sprays a mixed gas obtained by mixing additive gas to a noble gas for generating plasma; and a noble gas nozzle which is provided at a position closer to the opposed surface relative to the mixed gas nozzle and sprays the noble gas that contains no additive gas along the opposed surface.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Patent Document 1 discloses a substrate processing apparatus that generates plasma in a processing chamber to perform a film formation process. This substrate processing apparatus supplies argon (Ar) as a plasma gas to a plasma processing region, and also supplies additive gases such as oxygen (O2), hydrogen (H2), nitrogen (N2), and ammonia (NH3) to improve film quality. In addition, the portion of the processing chamber that outputs high frequency waves to the plasma processing region is made of quartz.

[0003] The quartz part of the processing vessel is physically bombarded by the Ar plasma, but this physical bombardment does little to damage the quartz part. However, when an additive gas is added to the Ar plasma, a chemical reaction occurs with the additive gas, causing further damage to the quartz part. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-220293 Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides a technique that can reduce damage to a processing vessel when plasma is generated. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, there is provided a processing vessel for processing a substrate, a substrate support part provided within the processing vessel and supporting the substrate, a plasma source part that forms an electric field for generating plasma in a plasma processing region between the substrate support part and an opposing surface facing the substrate support part, and a plurality of processing gas nozzles that eject gas into the plasma processing region, wherein the plurality of processing gas nozzles include mixed gas nozzles that eject mixed gas obtained by mixing an additive gas with a rare gas for generating the plasma, and a rare gas nozzle that is provided at a position closer to the opposing surface than the mixed gas nozzles and ejects the rare gas not including the additive gas along the opposing surface. fruit , the rare gas nozzle has a gas hole for ejecting the rare gas parallel to the opposing surface, and the mixed gas nozzle and the rare gas nozzle extend parallel to each other along a surface direction of the opposing surface. A substrate processing apparatus is provided. [Effects of the Invention]

[0007] According to one aspect, damage to the processing vessel during plasma generation can be reduced. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a schematic cross-sectional view showing an example of the configuration of a substrate processing apparatus according to a first embodiment. [Figure 2] FIG. 2 is a schematic plan view of the substrate processing apparatus of FIG. [Figure 3] 1 is a schematic cross-sectional view showing the configuration of a substrate processing apparatus that forms a plasma processing region. [Figure 4] 4 is an enlarged schematic cross-sectional view taken along line IV-IV in FIG. 3. FIG. [Figure 5] FIG. 2 is a schematic plan view showing a plasma processing region of the substrate processing apparatus according to the first embodiment. [Figure 6] 1 is a flowchart illustrating an example of a substrate processing method. [Figure 7] 10 is a graph showing the amount of quartz deposition in an experiment in which plasma processing was performed in a substrate processing apparatus. [Figure 8] FIG. 10 is a schematic plan view showing a plasma processing region of a substrate processing apparatus according to a second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0010] [First embodiment] FIG. 1 is a schematic cross-sectional view showing an example of the configuration of a substrate processing apparatus 100 according to a first embodiment. FIG. 2 is a schematic plan view of the substrate processing apparatus of FIG. 1. For ease of explanation, a top plate is not shown in FIG. 2. As shown in FIGS. 1 and 2, the substrate processing apparatus 100 according to the first embodiment is a film formation apparatus that forms a predetermined film on the surface of a substrate. The substrate processing apparatus 100 performs film formation processing by atomic layer deposition (ALD) or molecular layer deposition (MLD).

[0011] The substrate to be subjected to the film formation process may be a semiconductor wafer such as a silicon semiconductor, a compound semiconductor, or an oxide semiconductor (hereinafter, the substrate may also be referred to as a wafer W). The wafer W may have a recess pattern such as a trench or a via. The type of film formed on the wafer W is not particularly limited, but the following describes in detail the configuration for forming a silicon oxide (SiO2) film.

[0012] 1, the substrate processing apparatus 100 includes a substantially cylindrical processing chamber 1 and a rotary table 2 (substrate support unit) that rotates (revolves) a wafer W within the processing chamber 1. The substrate processing apparatus 100 also includes a control unit 110 that controls each component of the apparatus.

[0013] The processing vessel 1 accommodates multiple wafers W therein and forms an SiO2 film on each wafer W. The processing vessel 1 includes a top plate 11 and a vessel body 12, and has an internal processing chamber that accommodates multiple wafers W and forms a predetermined film on each wafer W. The processing vessel 1 has an annular sealing member 13 on the outer peripheral wall of the upper surface of the vessel body 12, and the top plate 11 can be detachably and airtightly fixed to the vessel body 12. The diameter (inner diameter) of the processing vessel 1 in a plan view is preferably designed to be, for example, about 1100 mm.

[0014] A separation gas supply pipe 16 for supplying a separation gas is connected to the center of the top plate 11. A purge gas supply pipe 17 for supplying a purge gas such as Ar gas is connected to the bottom surface 14 of the vessel body 12. A plurality of purge gas supply pipes 17 are provided along the circumferential direction of the bottom surface 14. The bottom surface 14 also has an annular protrusion 12a at a position close to the outer circumferential surface of a core portion 21 to which the turntable 2 is fixed.

[0015] 2, the processing vessel 1 has a transfer port 15 for transferring the wafer W between the turntable 2 and the transfer arm 10, and a gate valve G for opening and closing the transfer port 15. The gate valve G airtightly seals the processing chamber of the processing vessel 1 when the transfer port 15 is closed. The turntable 2 has a recess 24 for placing the wafer W at a position adjacent to the transfer port 15, thereby transferring the wafer W to and from the transfer arm 10.

[0016] As shown in Fig. 1, the center of the turntable 2 is fixed to a substantially cylindrical core 21. The core 21 is connected to a rotation shaft 22 extending in the vertical direction, and the rotation shaft 22 is supported by a drive unit 23. The drive unit 23 rotates the turntable 2 around the vertical axis (clockwise in Fig. 2). The diameter of the turntable 2 is not particularly limited, but may be approximately 1000 mm, for example, when the diameter of the processing vessel 1 is 1100 mm.

[0017] The driving unit 23 includes an encoder 25 that detects the rotation angle of the rotary shaft 22. The rotation angle of the rotary shaft 22 detected by the encoder 25 is transmitted to the control unit 110 and is used by the control unit 110 to identify the position of the wafer W placed in each recess 24 on the turntable 2.

[0018] The lower end of the rotary shaft 22, the drive unit 23, and the encoder 25 are housed in a case body 26. The case body 26 is airtightly attached to the bottom surface 14 of the processing vessel 1. A purge gas supply pipe 27 that supplies a purge gas to the region below the turntable 2 is connected to the case body 26.

[0019] The turntable 2 has a plurality of (six in this embodiment) circular recesses 24 on its surface, each capable of mounting a wafer W having a diameter of, for example, 300 mm. The recesses 24 are provided at equal intervals along the direction of rotation of the turntable 2 (clockwise in FIG. 2). Each recess 24 has an inner diameter that is slightly larger (by about 1 mm to 4 mm) than the diameter of the wafer W. The depth of the recess 24 is configured to be approximately equal to or larger than the thickness of the wafer W. Therefore, when the wafer W is accommodated in the recess 24, the surface of the wafer W and the surface of the turntable 2 are at the same height, or the surface of the wafer W is lower than the surface of the turntable 2.

[0020] A plurality of (e.g., three) through-holes (not shown) through which a plurality of lift pins (not shown) pass are formed in the bottom surface of recess 24. The plurality of lift pins are provided at a transfer position for wafer W near transfer opening 15, and are raised and lowered in the vertical direction by a lift mechanism (not shown).

[0021] 2, the substrate processing apparatus 100 has a plurality of gas nozzles arranged above the passage area of ​​each recess 24. The gas nozzles extend along a normal to the rotation direction of the turntable 2 and are spaced apart from one another along the circumferential direction of the processing vessel 1. In this embodiment, the plurality of gas nozzles include a first processing gas nozzle 31, a second processing gas nozzle 32, third processing gas nozzles 33 to 36, and separation gas nozzles 41 and 42.

[0022] The first process gas nozzle 31, the second process gas nozzle 32, the third process gas nozzles 33 to 36, and the separation gas nozzles 41 and 42 are disposed in the process chamber between the turntable 2 and the top plate 11. The first process gas nozzle 31, the second process gas nozzle 32, and the separation gas nozzles 41 and 42 each extend linearly in a radial direction from the outer peripheral wall of the process vessel 1 toward the central region C, and are fixed parallel (horizontally) to the turntable 2. In FIG. 2, the third process gas nozzles 33 to 36, the separation gas nozzle 41, the first process gas nozzle 31, the separation gas nozzle 42, and the second process gas nozzle 32 are disposed in this order clockwise from the transfer port 15.

[0023] The first process gas nozzle 31 has a plurality of gas holes (not shown) on its lower surface (the side facing the turntable 2) and ejects a first process gas through each gas hole to a first process region P1 in the lower side of the process chamber. The first process gas nozzle 31 is connected to a first process gas supply source outside the process vessel 1 via a flow rate control valve and an open / close valve (both not shown). When forming an SiO2 film, the first process gas nozzle 31 ejects, for example, a silicon-containing gas as the first process gas onto the wafer W.

[0024] A nozzle cover 40 is provided above the first process gas nozzle 31. The nozzle cover 40 covers the top and both sides of the first process gas nozzle 31, allowing the first process gas to flow along the wafer W, and guiding the separation gas to flow along the top plate 11 side of the process vessel 1 while avoiding the wafer W.

[0025] The second process gas nozzle 32 has a plurality of gas holes on its lower surface (the side facing the turntable 2) and ejects the second process gas through each gas hole to a second process region P2 in the lower part of the process chamber. The second process gas nozzle 32 is connected to a second process gas supply source outside the process vessel 1 via a flow rate control valve and an open / close valve (both not shown). When forming a SiO2 film, the second process gas nozzle 32 ejects, for example, an oxidizing gas (O2, O3, or a mixture thereof) as the second process gas.

[0026] The third process gas nozzles 33-36 eject a third process gas into a third process region P3 of the process chamber. The third process region P3 is a region where plasma processing is performed on the wafer W, and will hereinafter also be referred to as the plasma processing region P3. The configuration provided in this plasma processing region P3 will be described in detail later.

[0027] The separation gas nozzles 41 and 42 form separation regions D1 and D2 that separate the first processing region P1 from the second processing region P2 and the third processing region P3 from the first processing region P1. Each of the separation gas nozzles 41 and 42 has multiple gas holes on its lower surface (the side facing the turntable 2) and ejects a separation gas such as an inert gas or a rare gas into the separation regions D1 and D2 through each gas hole. The separation gas nozzles 41 and 42 are connected to a separation gas supply source outside the processing vessel 1 via a flow rate adjustment valve and an on-off valve (both not shown).

[0028] A substantially fan-shaped convex portion 4 is provided on the back surface of the top plate 11 (see FIG. 1) of the processing vessel 1 in the separation regions D1 and D2. The convex portion 4 has a groove (not shown) extending radially in the circumferential center, and the separation gas nozzles 41 and 42 are housed in this groove.

[0029] Returning to Figure 1, a protrusion 5 is provided in the center of the underside of the top plate 11, and is formed in a substantially annular shape along the circumferential direction, continuing from the part of the convex portion 4 on the central region C side. The lower surface of the protrusion 5 is formed at the same height as the lower surface of the convex portion 4. A labyrinth structure 51 is provided closer to the rotation center of the turntable 2 than the protrusion 5 and above the core portion 21 in order to suppress mixing of the various gases in the central region C.

[0030] 1 and 2, the processing vessel 1 is provided with an annular side ring 18 serving as a cover, located outside and below the turntable 2. A groove-shaped gas flow path 18a is formed in the side ring 18, allowing gas to flow therethrough.

[0031] The side ring 18 also has a first exhaust port 61 and a second exhaust port 62 on its upper surface. The first exhaust port 61 is formed between the first process gas nozzle 31 and the separation region D1. The second exhaust port 62 is formed between the plasma processing region P3 and the separation region D2. The first exhaust port 61 mainly exhausts the first process gas and the separation gas, and the second exhaust port 62 mainly exhausts the third process gas and the separation gas. As shown in FIG. 1 , an exhaust pipe 63 is connected to the gas flow path 18a via an exhaust port in the bottom portion 14 of the processing vessel 1. The exhaust pipe 63 is connected to a pressure adjustment unit 64 such as a butterfly valve and a vacuum exhaust mechanism 65 such as a vacuum pump.

[0032] The substrate processing apparatus 100 also includes a heater unit 7 in the space between the bottom surface 14 of the processing chamber 1 and the turntable 2. The heater unit 7 is housed in a cover body 71 supported by the protruding portion 12a of the chamber body 12, and heats the wafer W on the turntable 2 to, for example, room temperature to approximately 700°C.

[0033] The control unit 110 of the substrate processing apparatus 100 may be a control computer having one or more processors 111, a memory 112, an input / output interface, and electronic circuits (all not shown). The processor 111 is one or a combination of a central processing unit (CPU), a graphics processing unit (GPU), an application specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a circuit made up of multiple discrete semiconductors, etc. The memory 112 includes a volatile memory and a non-volatile memory (e.g., a compact disc, a digital versatile disc (DVD), a hard disk, a flash memory, etc., and a combination of one or more of them). The memory 112 stores a program for operating the substrate processing apparatus 100 and a recipe for the process conditions of the film formation process, etc.

[0034] Next, a description will be given of the configuration of the plasma processing region P3 of the substrate processing apparatus 100. As shown in Fig. 2, the substrate processing apparatus 100 includes a plasma source unit 80 located above the plasma processing region P3. The plasma source unit 80 is formed in a substantially rectangular shape in plan view, with its long sides aligned along the radial direction of the turntable 2, and is installed so as to straddle the diameter of the recess 24 (wafer W) positioned on the turntable 2.

[0035] Fig. 3 is a schematic cross-sectional view showing the configuration of the substrate processing apparatus 100 that forms the plasma processing region P3. Fig. 4 is a schematic cross-sectional view showing an enlarged view of line IV-IV in Fig. 3. Fig. 5 is a schematic plan view showing the plasma processing region P3 of the substrate processing apparatus 100 according to the first embodiment. In Fig. 5, for ease of understanding, the third processing gas nozzles 33-36 are shown by solid lines, and the configuration of the processing vessel 1 and the plasma source unit 80 is shown by virtual lines (two-dot chain lines).

[0036] 3 and 4, the substrate processing apparatus 100 is configured as an inductively coupled type in which a third process gas ejected into the processing chamber (plasma processing region P3) by the third process gas nozzles 33-36 is converted into plasma by outputting a high frequency wave from above the processing vessel 1. For this reason, the plasma source unit 80 includes an antenna 83 at the top of the processing vessel 1, which forms an inductive electric field in the plasma processing region P3.

[0037] Antenna 83 is installed so as to be airtightly partitioned from the internal region of processing vessel 1. Antenna 83 has a flat coil shape in plan view that follows the rectangular shape of plasma source unit 80 (see also FIG. 2). As an example, antenna 83 is formed by winding a metal wire or the like multiple times (e.g., three times) around a vertical axis.

[0038] The antenna 83 is connected to an RF power supply 85 outside the processing chamber 1 via a matching box 84. The RF power supply 85 outputs high-frequency power of, for example, 13.56 MHz to the antenna 83. The plasma source unit 80 also has a connection electrode 86 for electrically connecting the antenna 83 with the matching box 84 and the RF power supply 85. The antenna 83 may be provided with a vertically bendable structure, a vertical movement mechanism for automatically bending the antenna 83 vertically, a mechanism for vertically moving a central portion of the turntable 2, and the like (all not shown), as needed.

[0039] An opening 11a that is substantially sector-shaped in plan view is formed in the top plate 11 above the third process gas nozzles 33-35. The plasma source unit 80 has a housing 90 that houses an antenna 83 via an annular member 82 that wraps around the edge of the opening 11a of the top plate 11. A sealing member 11b, such as an O-ring, is provided between the annular member 82 and the housing 90. The plasma source unit 80 is assembled to the processing vessel 1 by fastening a frame-shaped pressing member 91 along the boundary between the annular member 82 and the housing 90 to the top plate 11 with fastening means, such as bolts, while the annular member 82 and the housing 90 are fitted into the opening 11a. This airtightly seals the ceiling side of the plasma processing region P3.

[0040] The housing 90 is made of a dielectric material such as quartz, and has the antenna 83 positioned below the top plate 11. The housing 90 has a flange portion 90a that protrudes in the circumferential direction at the upper edge and a central portion that is recessed downward toward the interior region of the processing vessel 1, forming a box-like shape that is concave in cross section. When the wafer W is positioned below the housing 90, the housing 90 is disposed so as to straddle the wafer W in the radial direction of the turntable 2. The lower surface of the housing 90 forms an opposing surface 93 that faces the turntable 2 within the plasma processing region P3.

[0041] A Faraday shield 95 and an insulating plate 94 are laminated on the side of the housing 90 opposite the facing surface 93. The Faraday shield 95 is made of a conductive plate (metal plate). The insulating plate 94 ensures insulation between the Faraday shield 95 and the antenna 83 and is made of quartz or the like.

[0042] The housing 90 has a protrusion 92 that protrudes downward from the facing surface 93 toward the turntable 2. The protrusion 92 circumferentially surrounds a third processing region P3 on the lower side of the housing 90. The third processing gas nozzles 33-36 are disposed in the plasma processing region P3 that is surrounded by the facing surface 93 of the housing 90, the inner peripheral surface of the protrusion 92, and the upper surface of the turntable 2. The protrusion 92 located at the base end of each of the third processing gas nozzles 33-36 (on the inner wall side of the processing vessel 1) is cut out in a substantially arc shape to fit the outer shape of the third processing gas nozzles 33-36.

[0043] The third process gas nozzles 33-36 eject a third process gas in cooperation with the plasma source unit 80. This generates plasma in the plasma processing region P3. The third process gas nozzles 33-36 eject a mixed gas MG of a rare gas for plasma generation and an additive gas such as ammonia (NH3), oxygen (O2), or hydrogen (H2) for improving film quality, and also eject a rare gas that does not contain an additive gas (hereinafter referred to as a simple rare gas RG). Examples of rare gases used for plasma generation include Ar gas and He gas. The following describes the case where Ar gas is used.

[0044] Specifically, the third process gas nozzles 33 to 36 include a base nozzle 33, an outer nozzle 34, and an axis-side nozzle 35 that spray a mixed gas MG, and a rare gas nozzle 36 that sprays a single rare gas RG. Note that the substrate processing apparatus 100 may be configured without one or both of the outer nozzle 34 and the axis-side nozzle 35.

[0045] 3 to 5, the base nozzle 33 is a gas nozzle for supplying the mixed gas MG to the entire surface of the wafer W, and is disposed upstream in the rotation direction of the turntable 2 (near the protrusion 92) within the plasma processing region P3. The base nozzle 33 extends linearly along the radial direction of the turntable 2 and reaches near the central region C of the processing chamber 1. The base nozzle 33 ejects a first mixed gas MG1 which is a mixture of Ar gas, NH3 gas, O2 gas, and H2 gas.

[0046] For example, the base nozzle 33 is disposed at a position closer to the opposing surface 93 (vertically higher) than the outer nozzle 34 and the shaft-side nozzle 35. Alternatively, the base nozzle 33, outer nozzle 34, and shaft-side nozzle 35 may be disposed at the same height, or the outer nozzle 34 and shaft-side nozzle 35 may be disposed vertically higher than the base nozzle 33. Note that while FIG. 3 illustrates a state in which the shaft-side nozzle 35 is disposed vertically higher than the outer nozzle 34, the heights of the outer nozzle 34 and the shaft-side nozzle 35 may be the same, or the shaft-side nozzle 35 may be disposed vertically lower than the outer nozzle 34.

[0047] The base nozzle 33 has a plurality of gas holes 33a facing the downstream side in the rotation direction of the turntable 2. The gas holes 33a are aligned at equal intervals along the longitudinal direction of the base nozzle 33 at the installation position of the plasma source unit 80 (below the opposing surface 93). Each gas hole 33a ejects the first mixed gas MG1 parallel to the surface direction (horizontal direction) of the opposing surface 93 of the plasma source unit 80. Note that the plurality of gas holes 33a may be formed at an angle diagonally downward (toward the turntable 2) with respect to the horizontal direction, and may eject the first mixed gas MG1 toward the turntable 2.

[0048] The outer nozzle 34 is a nozzle for supplying the mixed gas MG intensively to an outer region of the wafer W, and is provided in the plasma processing region P3 near the upstream side in the rotation direction of the turntable 2. The outer nozzle 34 has a radial portion that extends a short distance from the outer peripheral wall of the processing vessel 1 toward the central region C, and an outer portion that bends near the outer peripheral wall and extends linearly clockwise. The outer nozzle 34 has one or more gas holes 34a in the outer portion. The multiple gas holes 34a are formed, for example, to face the central region C and obliquely downward (toward the turntable 2).

[0049] The axis-side nozzle 35 is a nozzle for supplying the mixed gas MG intensively to the wafer W near the central region C of the processing vessel 1, and is provided near the downstream side in the rotation direction of the turntable 2 within the plasma processing region P3. The axis-side nozzle 35 has a radial portion extending radially from the outer peripheral wall of the processing vessel 1 toward the central region C, and an axis-side portion bending near the central region C and extending linearly counterclockwise (opposite to the rotation direction of the turntable 2). The axis-side nozzle 35 has one or more gas holes 35a in the axis-side portion. The multiple gas holes 35a are formed, for example, to face the outer peripheral wall of the processing vessel 1 and obliquely downward (toward the turntable 2).

[0050] The outer nozzle 34 and the shaft-side nozzle 35 eject a second mixed gas MG2 which is a mixture of Ar gas and NH3 gas, unlike the first mixed gas MG1 (Ar gas, NH3 gas, O2 gas, H2 gas) of the base nozzle 33. Note that the base nozzle 33, the outer nozzle 34, and the shaft-side nozzle 35 may be configured to eject the same mixed gas MG.

[0051] On the other hand, the rare gas nozzle 36 is a gas nozzle for supplying the elemental rare gas RG along the facing surface 93, and is arranged at a position closer to the facing surface 93 than the base nozzle 33 (vertically above). The rare gas nozzle 36 and the base nozzle 33 extend parallel to each other along the surface direction of the facing surface 93. The rare gas nozzle 36 has an extension length approximately equal to that of the base nozzle 33. The rare gas nozzle 36 may be arranged not in contact with the facing surface 93, or may be arranged to extend while contacting the facing surface 93.

[0052] 4 and 5, the rare gas nozzle 36 and the base nozzle 33 are disposed close to each other. For example, the distance between the base nozzle 33 and the rare gas nozzle 36 is shorter than the diameter of these nozzles. In addition, the rare gas nozzle 36 according to this embodiment is disposed downstream of the base nozzle 33 in the rotation direction of the turntable 2 in the plasma processing region P3 in a plan view. However, the rare gas nozzle 36 may be disposed upstream of the base nozzle 33 in the rotation direction of the turntable 2, or may be disposed so as to overlap the base nozzle 33 in a plan view. The rare gas nozzle 36 and the base nozzle 33 may be formed by a single tubular body having two flow paths, one for the mixed gas MG and one for the simple rare gas RG.

[0053] The rare gas nozzle 36 has a plurality of gas holes 36a facing the downstream side in the rotation direction of the turntable 2. The gas holes 36a are aligned at equal intervals along the longitudinal direction of the rare gas nozzle 36 at the installation position of the plasma source unit 80 (below the facing surface 93). Each gas hole 36a ejects the elemental rare gas RG parallel to the surface direction (horizontal direction) of the facing surface 93 of the plasma source unit 80. Note that each gas hole 36a may be formed so as to be inclined obliquely upward (toward the facing surface 93) with respect to the horizontal direction. Each gas hole 36a may be formed as an elongated hole along the longitudinal direction of the rare gas nozzle 36 to form a laminar flow of the elemental rare gas RG along the surface direction of the facing surface 93.

[0054] The above-described rare gas nozzle 36 ejects the elemental rare gas RG from each gas hole 36a, thereby allowing the elemental rare gas RG to flow along the opposing surface 93. As a result, a flow layer of the elemental rare gas RG is formed near the opposing surface 93, and the elemental rare gas RG can restrict the mixed gas MG from moving toward the opposing surface 93. It should be noted that not only one rare gas nozzle 36 but also a plurality of nozzles 36 may be installed in the plasma processing region P3.

[0055] The third process gas nozzles 33-36 are connected to a process gas supply unit 37 outside the process vessel 1. The process gas supply unit 37 includes an Ar gas source 371, an NH gas source 372, an O gas source 373, an H gas source 374, and a first mixer 375a and a second mixer 375b for generating a mixed gas MG to supply the third process gas. The type of additive gas mixed by the process gas supply unit 37 is not particularly limited, and may be one or two of NH gas, O gas, and H gas, or another additive gas (e.g., N gas).

[0056] The first mixing unit 375a is a buffer unit that generates a first mixed gas MG1 containing Ar gas, NH3 gas, O2 gas, and H2 gas. The second mixing unit 375b is a buffer unit that generates a second mixed gas MG2 containing Ar gas and NH3 gas. Flow regulators, open / close valves, and the like (not shown) are provided between the Ar gas source 371, the NH3 gas source 372, the O2 gas source 373, and the H2 gas source 374 and the first mixing unit 375a and the second mixing unit 375b. The process gas supply unit 37 can adjust the mixing ratio of the first mixed gas MG1 and the second mixed gas MG2 by adjusting the flow rate of each gas source using the flow regulators.

[0057] The base nozzle 33 is connected to a first mixing unit 375a via a first mixed gas path 376. A flow rate controller 376a, an on-off valve 376b, and the like are installed midway along the first mixed gas path 376. Under the control of the control unit 110, the process gas supply unit 37 opens and closes the on-off valve 376b to switch between supplying and stopping the supply of the first mixed gas MG1 to the base nozzle 33, and adjusts the flow rate of the first mixed gas MG1 using the flow rate controller 376a.

[0058] The outer nozzle 34 is connected to a second mixing unit 375b via a second mixed gas path 377. A flow rate controller 377a, an on-off valve 377b, and the like are installed midway along the second mixed gas path 377. Under the control of the control unit 110, the process gas supply unit 37 opens and closes the on-off valve 377b to switch between supplying and stopping the supply of the second mixed gas MG2 to the outer nozzle 34, and adjusts the flow rate of the second mixed gas MG2 using the flow rate controller 377a.

[0059] Similarly, the shaft-side nozzle 35 is connected to the second mixing unit 375b via a third mixed gas path 378. A flow rate controller 378a, an on-off valve 378b, and the like are installed midway along the third mixed gas path 378. Under the control of the control unit 110, the process gas supply unit 37 opens and closes the on-off valve 378b to switch between supplying and stopping the supply of the second mixed gas MG2 to the shaft-side nozzle 35, and adjusts the flow rate of the second mixed gas MG2 using the flow rate controller 378a.

[0060] On the other hand, the rare gas nozzle 36 is connected to the Ar gas source 371 via an elemental gas path 379. A flow rate controller 379a, an on-off valve 379b, and the like are installed in a position along the elemental gas path 379. Under the control of the control unit 110, the process gas supply unit 37 opens and closes the on-off valve 379b to switch between supplying and stopping the supply of the elemental rare gas RG to the rare gas nozzle 36, and adjusts the flow rate of the elemental rare gas RG using the on-off valve 379b.

[0061] The substrate processing apparatus 100 according to this embodiment is basically configured as described above, and its operation (substrate processing method) will be described below.

[0062] 6 is a flowchart showing an example of a substrate processing method. After placing wafers W in the recesses 24 of the turntable 2 in the processing chamber 1, the control unit 110 of the substrate processing apparatus 100 sequentially performs an SiO film forming step S1 and a plasma annealing step S2 as a substrate processing method, as shown in FIG.

[0063] In the SiO2 film forming process S1, the control unit 110 controls the pressure inside the processing chamber 1 to a predetermined pressure using the pressure adjusting unit 64 and the vacuum exhaust mechanism 65, and rotates the turntable 2 while heating the wafer W to a predetermined temperature using the heater unit 7. At this time, the control unit 110 supplies a separation gas (e.g., Ar gas) from the separation gas nozzles 41 and 42.

[0064] Furthermore, the control unit 110 supplies a silicon-containing gas, which is a first process gas, from the first process gas nozzle 31. As a result, the silicon-containing gas adheres to the surface of the wafer W in the first process region P1.

[0065] Furthermore, the control unit 110 supplies an oxidizing gas, which is a second process gas, from the second process gas nozzle 32. As a result, in the second process region P2, the silicon-containing gas on the wafer W, which has moved in accordance with the rotation of the turntable 2, is oxidized by the oxidizing gas. As a result, a molecular layer of SiO, which is a thin film component, is formed and deposited on the wafer W.

[0066] Then, the control unit 110 continues to rotate the turntable 2, thereby repeating a cycle including adhesion of the silicon-containing gas to the surface of the wafer W and oxidation of the silicon-containing gas components. As a result, an SiO2 film having a desired thickness is formed on the surface of the wafer W. When the thickness of the SiO2 film reaches the desired thickness, the control unit 110 ends the SiO2 film formation step S1.

[0067] Next, in the plasma annealing step S2, the control unit 110 controls the pressure inside the processing chamber 1 to a predetermined pressure by the pressure adjusting unit 64 and the vacuum exhaust mechanism 65, and rotates the turntable 2 while heating the wafer W to a predetermined temperature by the heater unit 7. At this time, the control unit 110 supplies a separation gas from the separation gas nozzles 41 and 42.

[0068] The control unit 110 then controls the processing gas supply unit 37 to eject a first mixed gas MG1 (Ar gas, NH3 gas, O2 gas, and H2 gas) from the base nozzle 33. The control unit 110 also controls the processing gas supply unit 37 to eject a second mixed gas MG2 (Ar gas and NH3 gas) from the outer nozzle 34 and the shaft-side nozzle 35. The control unit 110 also controls the processing gas supply unit 37 to eject a single rare gas RG from the rare gas nozzle 36. In this state, the control unit 110 supplies RF power from the RF power supply 85 to the antenna 83, thereby forming an induction electric field in the plasma processing region P3.

[0069] In the plasma processing region P3, Ar gas is excited by high frequency to generate plasma. O2 gas also improves the oxidizing power of silicon. H2 gas creates OH groups on the surface of the wafer W. In particular, H2 gas creates a distribution of OH groups in the depth direction of the trench of the wafer W depending on the plasma conditions, and by creating differences in the amount of adsorption, it is possible to improve the filling characteristics of the V-shaped trench. Furthermore, NH3 gas improves the filling characteristics of the surface of the wafer W, including the trench.

[0070] 7 is a graph showing the amount of quartz deposits in an experiment in which plasma processing was performed in the substrate processing apparatus 100. In this graph, the horizontal axis represents processing time [min], and the vertical axis represents the thickness [nm] of the quartz deposits caused by the plasma processing. In this experiment, the process conditions were as follows: the wafer W was heated to 400°C, the pressure inside the processing chamber 1 was adjusted to a range of 1.8 Torr (240 Pa) to 2.0 Torr (267 Pa), and 4000 W of high-frequency power was supplied to the antenna 83.

[0071] As can be seen from the experimental results shown in Figure 7, when only rare gases, Ar gas or He gas, are supplied, the thickness of the quartz deposit is small. In other words, it can be seen that supplying only plasma gases, Ar gas or He gas, hardly generates any quartz deposits (particles). This is because even if plasmatized Ar gas or He gas physically collides with the quartz that constitutes the housing 90, this physical collision does not damage the quartz.

[0072] On the other hand, when O2 gas and H2 gas are added to He gas, when O2 gas is added to He gas, when O2 gas and H2 gas are added to Ar gas, and when O2 gas is added to Ar gas, the thickness of the quartz deposit is greater than when Ar gas or He gas is added alone. This is because the chemical reaction of O2 gas and H2 gas with the plasma-converted Ar gas or He gas etches the quartz surface. Therefore, as the plasma processing time increases, damage to the quartz surface progresses.

[0073] The substrate processing apparatus 100 according to this embodiment ejects the single rare gas RG (only Ar gas) closer to the facing surface 93 than the ejection points of the first mixed gas MG1 (Ar gas, NH gas, O gas, and H gas) and the second mixed gas MG2 (Ar gas and NH gas). That is, as shown in Figures 4 and 5, the base nozzles 33 (outer nozzles 34 and shaft-side nozzles 35) eject the mixed gas MG horizontally or toward the turntable 2, while the rare gas nozzles 36 eject the single rare gas RG horizontally along the facing surface 93.

[0074] Therefore, in the plasma processing region P3, a flow layer of the mixed gas MG is formed closer to the turntable 2, and a flow layer of the elemental rare gas RG is formed closer to the facing surface 93 than the flow layer of the mixed gas MG. Therefore, in the substrate processing apparatus 100, the surface of the quartz comes into contact with only the plasma of Ar gas, eliminating damage caused by chemical reactions between the quartz on the facing surface 93 and the additive gases (NH3 gas, H2 gas, O2 gas). Furthermore, below the flow layer of the elemental rare gas RG, NH3 gas, H2 gas, O2 gas, etc. are also excited by the plasma of excited Ar gas. This allows the substrate processing apparatus 100 to reduce quartz damage and suppress the generation of quartz particles while maintaining improved NH3 filling characteristics. Furthermore, significantly reducing quartz damage allows the use life of the processing vessel 1 (housing 90) to be extended.

[0075] During plasma processing, the control unit 110 controls the processing gas supply unit 37 to appropriately adjust the timing of ejection of the mixed gas MG from the base nozzle 33, the outer nozzle 34, and the shaft-side nozzle 35, and the timing of ejection of the elemental rare gas RG from the rare gas nozzle 36. For example, the control unit 110 sets the ejection start timing of the mixed gas MG and the ejection start timing of the elemental rare gas RG to the same timing, and continuously ejects the rare gas throughout the ejection period of the mixed gas MG. Alternatively, the control unit 110 may be configured to eject the mixed gas MG after first starting the ejection of the elemental rare gas RG. This allows the mixed gas MG to be supplied to the plasma processing region P3 while a flow layer of the elemental rare gas RG is formed near the facing surface 93, thereby more reliably suppressing damage to the facing surface 93.

[0076] Furthermore, the control unit 110 can control the process gas supply unit 37 to appropriately adjust the amount of ejection of the mixed gas MG and the amount of ejection of the simple rare gas RG. For example, the control unit 110 can make the amount of ejection of the simple rare gas RG from the rare gas nozzle 36 greater than the amount of ejection of the mixed gas MG from the base nozzle 33. This more reliably prevents the mixed gas MG from heading toward the opposing surface 93. The ratio of the amount of ejection of the simple rare gas RG to the amount of ejection of the mixed gas MG may be, for example, in the range of approximately 1.1 to 2.0.

[0077] Here, the total amount of additive gas is set to about 1% of the total amount of Ar gas supplied to the plasma processing region P3. By supplying a large amount of the elemental rare gas RG from the rare gas nozzle 36, the substrate processing apparatus 100 can increase the mixing ratio of the additive gas in the mixed gas MG supplied from the base nozzle 33, outer nozzle 34, and shaft-side nozzle 35 below the elemental rare gas RG compared to conventional techniques. Therefore, the substrate processing apparatus 100 is expected to improve the efficiency of plasma processing and film quality. Note that the control unit 110 may set the amount of ejection of the elemental rare gas RG to be less than the amount of ejection of the mixed gas MG in order to form a laminar flow of the elemental rare gas RG over the entire facing surface 93.

[0078] When the control unit 110 of the substrate processing apparatus 100 completes the above-described plasma annealing step S2, it controls the processing gas supply unit 37 to stop the supply of the third processing gas and also stops the supply of high-frequency power to the plasma source unit 80. Thereafter, the control unit 110 unloads the processed wafer W from the processing chamber 1, and the processing ends. Note that, in the substrate processing method of the above embodiment, the SiO2 film formation step S1 and the plasma annealing step S2 are performed sequentially once each, but this is not limiting, and the SiO2 film formation step S1 and the plasma annealing step S2 may be alternately repeated multiple times.

[0079] The substrate processing apparatus 100 and the substrate processing method of the present disclosure are not limited to the above-described embodiment and may take various forms. For example, the rare gas nozzle 36 is not limited to a linear tube parallel to the base nozzle 33 and may take various forms. As an example, the rare gas nozzle 36 may be an annular tube that circles around the antenna 83 and sprays a single rare gas into the inside of the annular tube.

[0080] Second Embodiment 8 is a schematic plan view showing a plasma processing region P3 of a substrate processing apparatus 100A according to a second embodiment. As shown in FIG. 8, the substrate processing apparatus 100A according to the second embodiment differs from the substrate processing apparatus 100 (film forming apparatus) of the above-described embodiment in that the substrate processing apparatus 100A according to the second embodiment is configured to etch a film (e.g., a SiO2 film) formed on a wafer W in the plasma processing region P3. For example, the substrate processing apparatus 100A ejects, as a third processing gas, Ar gas as a plasma gas, and trifluoromethane (CHF3) gas and O2 gas as additive gases into the plasma processing region P3. Note that the processing gas for etching is not limited to CHF3 gas, and it goes without saying that an appropriate gas may be adopted depending on the type of film formed on the wafer W.

[0081] The substrate processing apparatus 100A ejects a mixed gas MG from the base nozzle 33, the outer nozzle 34, and the shaft-side nozzle 35, and also ejects an elemental rare gas RG from the rare gas nozzle 36. More specifically, the substrate processing apparatus 100A ejects a first mixed gas MG1 containing Ar gas, CHF3 gas, and O2 gas from the base nozzle 33. The substrate processing apparatus 100A also ejects a second mixed gas MG2 containing Ar gas and CHF3 gas from the outer nozzle 34 and the shaft-side nozzle 35. The substrate processing apparatus 100A ejects an elemental rare gas RG consisting of only Ar gas from the rare gas nozzle 36.

[0082] In this way, even in the substrate processing apparatus 100A that performs etching, damage to the facing surface 93 can be suppressed by ejecting the elemental rare gas RG near the facing surface 93. That is, the substrate processing apparatus 100A forms a flow layer of only Ar gas near the facing surface 93, thereby suppressing damage caused by chemical reactions between the quartz on the facing surface 93 and the additive gases (CHF3 gas, O2 gas). Furthermore, below the flow layer of the elemental rare gas RG, CHF3 gas, O2 gas, etc. are excited by the plasma of the excited Ar gas. Therefore, the substrate processing apparatus 100A can reduce damage to the quartz surface while improving the etching characteristics of CHF3 gas, and the use life of the housing 90 can be extended.

[0083] The technical ideas and effects of the present disclosure explained in the above embodiments will be described below.

[0084] A substrate processing apparatus 100, 100A according to a first aspect of the present disclosure includes a processing chamber 1 for processing a substrate (wafer W), a substrate support (rotary table 2) provided within the processing chamber 1 and supporting the substrate, a plasma source unit 80 for forming an electric field for generating plasma in a plasma processing region P3 between the substrate support and an opposing surface 93 facing the substrate support, and a plurality of processing gas nozzles (third processing gas nozzles 33-36) for spraying gas into the plasma processing region P3, the plurality of processing gas nozzles including a mixed gas nozzle (base nozzle 33) for spraying a mixed gas MG in which an additive gas is mixed with a rare gas for generating plasma, and a rare gas nozzle 36 provided closer to the opposing surface 93 than the mixed gas nozzle and for spraying a rare gas not containing an additive gas along the opposing surface 93.

[0085] As described above, the substrate processing apparatus 100, 100A can reduce damage to the processing vessel 1 by ejecting the rare gas from the rare gas nozzle 36 along the facing surface 93 during plasma generation. That is, the flow layer of the rare gas flowing along the facing surface 93 prevents the additional gas from moving to the facing surface 93, suppressing a chemical reaction between the facing surface 93 and the additional gas. As a result, the substrate processing apparatus 100, 100A can minimize the generation of particles associated with damage to the processing vessel 1 and can also increase the durability of the processing vessel 1.

[0086] Furthermore, the rare gas nozzle 36 has gas holes 36a that eject the rare gas parallel to the facing surface 93. This allows the substrate processing apparatus 100, 100A to favorably form a rare gas flow layer along the facing surface 93.

[0087] Furthermore, the mixed gas nozzle (base nozzle 33) and the rare gas nozzle 36 extend parallel to each other along the surface direction of the opposing surface 93. This allows the substrate processing apparatus 100, 100A to cover the area from which the mixed gas nozzle ejects the mixed gas MG with a flow layer of the rare gas ejected from the rare gas nozzle, thereby more reliably reducing damage to the opposing surface 93.

[0088] Furthermore, the flow rate of the rare gas ejected from the rare gas nozzle 36 is greater than the flow rate of the mixed gas MG ejected from the mixed gas nozzle (base nozzle 33). This allows the substrate processing apparatus 100, 100A to further suppress the movement of the mixed gas MG toward the opposing surface 93 by the rare gas ejected from the rare gas nozzle 36.

[0089] The control unit 110 controls the start of gas ejection from the plurality of process gas nozzles (third process gas nozzles 33-36), and the control unit 110 controls the start of ejection of rare gas from the rare gas nozzle 36 to be before the start of ejection of the mixed gas MG from the mixed gas nozzle (base nozzle 33), and continuously ejects rare gas from the rare gas nozzle 36 throughout the period in which the mixed gas MG is being ejected from the mixed gas nozzle. This allows the substrate processing apparatus 100, 100A to constantly form a rare gas flow layer on the opposing surface 93 while the mixed gas MG is being ejected, thereby protecting the opposing surface 93.

[0090] The rare gas is argon gas or helium gas. This allows the substrate processing apparatus 100, 100A to stably generate plasma and to suppress damage to the facing surface 93 even if the plasma collides with the facing surface 93.

[0091] The additive gas includes at least one of ammonia gas, oxygen gas, and hydrogen gas. This allows the substrate processing apparatus 100, 100A to cover the facing surface 93 with the rare gas while performing a good plasma processing on the wafer W.

[0092] The additive gas includes an etching gas for etching a film on the substrate, so that the substrate processing apparatus 100A can suppress damage to the processing chamber 1 even when etching a film on the wafer W as the substrate processing.

[0093] Furthermore, the opposing surface 93 of the plasma source unit 80 is made of quartz. This prevents damage to the opposing surface 93 of the plasma source unit 80 even if it is physically hit by the rare gas plasma, and the rare gas flow layer blocks chemical reactions with the additive gas. Therefore, the plasma source unit 80 of the substrate processing apparatus 100, 100A can be used stably for a long period of time.

[0094] The substrate support unit has recesses 24 for accommodating multiple substrates (wafers W) within the processing vessel 1, and a turntable 2 for revolving the substrates accommodated in each of the multiple recesses 24. The processing vessel 1 is equipped with a plasma source unit 80, a mixed gas nozzle (base nozzle 33), and a rare gas nozzle 36 above an area through which the multiple recesses 24 pass. This allows the substrate processing apparatus 100, 100A to effectively prevent damage to the processing vessel 1 even when plasma is generated in an apparatus that revolves the substrate.

[0095] A second aspect of the present disclosure is a substrate processing method for processing a substrate (wafer W), comprising: a processing vessel 1 that accommodates the substrate; a substrate support (rotary table 2) provided within the processing vessel 1 and supporting the substrate; a plasma source unit 80 that forms an electric field for generating plasma in a plasma processing region P3 between a facing surface 93 facing the substrate support unit and the substrate support unit; and a plurality of processing gas nozzles (third processing gas nozzles 33-36) that eject gas into the plasma processing region P3. In the substrate processing method, a mixed gas MG obtained by mixing a rare gas for generating plasma with an additive gas is ejected from a mixed gas nozzle (base nozzle 33) that is a processing gas nozzle, while a rare gas nozzle 36 that is a processing gas nozzle provided closer to the facing surface 93 than the mixed gas nozzle ejects a rare gas not containing the additive gas along the facing surface 93, thereby generating plasma from the plasma source unit 80. Even in this case, the substrate processing method can reduce damage to the processing vessel during plasma generation.

[0096] The substrate processing apparatus 100, 100A, and substrate processing method according to the presently disclosed embodiments are illustrative in all respects and not restrictive. The embodiments may be modified and improved in various ways without departing from the spirit and scope of the appended claims. The features described in the above embodiments may be configured differently and may be combined within a consistent range.

[0097] For example, the substrate processing apparatus 100, 100A may have a structure in which the substrate support part that supports the wafers W is non-rotating, or may have a structure in which the substrate support part rotates around the central axis of one wafer W. Alternatively, the substrate processing apparatus 100 may have a structure in which each wafer W rotates on its own axis while revolving multiple wafers W around the axis. [Explanation of symbols]

[0098] 1. Processing container 2 Rotating Tables 33 Base nozzle 36 Noble gas nozzle 80 Plasma source 93 Opposite Surface 100, 100A substrate processing equipment P3 Plasma processing area W wafer

Claims

1. a processing vessel for processing a substrate; a substrate support provided in the processing chamber and supporting the substrate; a plasma source unit that forms an electric field for generating plasma in a plasma processing region between the substrate support unit and an opposing surface facing the substrate support unit; a plurality of processing gas nozzles that eject gas into the plasma processing region; The plurality of process gas nozzles include: a mixed gas nozzle for ejecting a mixed gas obtained by mixing an additive gas with a rare gas for generating the plasma; a rare gas nozzle that is provided at a position closer to the opposing surface than the mixed gas nozzle and that ejects the rare gas that does not contain the additive gas along the opposing surface, the rare gas nozzle has a gas hole through which the rare gas is ejected parallel to the opposing surface, the mixed gas nozzle and the rare gas nozzle extend parallel to each other along the surface direction of the opposing surfaces; Substrate processing equipment.

2. A processing vessel for processing a substrate; a substrate support provided in the processing chamber and supporting the substrate; a plasma source unit that forms an electric field for generating plasma in a plasma processing region between the substrate support unit and an opposing surface facing the substrate support unit; a plurality of processing gas nozzles that eject gas into the plasma processing region; The plurality of process gas nozzles include: a mixed gas nozzle for ejecting a mixed gas obtained by mixing an additive gas with a rare gas for generating the plasma; a rare gas nozzle that is provided at a position closer to the opposing surface than the mixed gas nozzle and that ejects the rare gas that does not contain the additive gas along the opposing surface, the substrate support unit has recesses for accommodating the plurality of substrates in the processing chamber, and a rotary table for revolving the substrates accommodated in each of the recesses; the processing vessel includes the plasma source unit, the mixed gas nozzle, and the rare gas nozzle above a region through which the plurality of recesses pass; Substrate processing equipment.

3. a flow rate of the rare gas ejected from the rare gas nozzle is greater than a flow rate of the mixed gas ejected from the mixed gas nozzle; The substrate processing apparatus according to claim 1 or 2.

4. a control unit that controls the ejection of gas from the plurality of processing gas nozzles; the control unit sets a timing at which the rare gas nozzle starts ejecting the rare gas before a timing at which the mixed gas nozzle starts ejecting the mixed gas, and continuously ejecting the rare gas from the rare gas nozzle throughout the period during which the mixed gas is being ejected from the mixed gas nozzle. The substrate processing apparatus according to claim 1 .

5. The rare gas is argon gas or helium gas. The substrate processing apparatus according to claim 1 .

6. The additive gas includes at least one of ammonia gas, oxygen gas, and hydrogen gas. The substrate processing apparatus according to claim 1 .

7. the additive gas includes an etching gas for etching a film on the substrate; The substrate processing apparatus according to claim 1 .

8. The facing surface of the plasma source unit is made of quartz. The substrate processing apparatus according to claim 1 .

9. A substrate processing method for processing a substrate, comprising: a processing vessel that accommodates the substrate; a substrate support provided in the processing chamber and supporting the substrate; a plasma source unit that forms an electric field for generating plasma in a plasma processing region between the substrate support unit and an opposing surface facing the substrate support unit; a plurality of processing gas nozzles that eject gas into the plasma processing region; The plurality of process gas nozzles include: a mixed gas nozzle for ejecting a mixed gas obtained by mixing an additive gas with a rare gas for generating the plasma; a rare gas nozzle that is provided at a position closer to the opposing surface than the mixed gas nozzle, and has a gas hole that ejects the rare gas that does not contain the additive gas parallel to the opposing surface, the mixed gas nozzle and the rare gas nozzle extend parallel to each other along a surface direction of the opposing surface, In the substrate processing method, While the mixed gas mixed with the additive gas is being ejected from the mixed gas nozzle, the rare gas not including the additive gas is ejected along the opposing surface by the rare gas nozzle; The plasma is generated by the plasma source unit. Substrate processing method.

Images