Gas distribution faceplate with diagonal flow passages

Abstract

A gas distribution faceplate is disclosed. The gas distribution faceplate includes a collection of gas passages extending from inlet gas ports on a first surface thereof to outlet gas ports on a second surface thereof. At least a portion of each gas passage may be angled obliquely relative to a reference centerline of the gas distribution faceplate, thereby allowing the inlet gas ports for a given collection of gas passages to be closely spaced and the outlet gas ports for that collection of gas passages to be more widely spaced. This allows for the use of more gas passages. This reduces or eliminates overlapping wear zones around each gas passage, while also reducing the flow rate through each gas passage, thereby reducing the erosion rate of the gas passages.

Description

[Background technology]

[0001] [Incorporated by reference] A PCT application form is being filed concurrently herewith as part of this application. Each application to which this application claims benefit or priority, identified in the concurrently filed PCT application form, is hereby incorporated by reference in its entirety for all purposes.

[0002] Capacitively Coupled Plasma (CCP) semiconductor processing tools may be used to perform various semiconductor processing steps, including etching steps. In such tools, process gases may be flowed to a wafer processing region through a gas distribution faceplate that is part of a showerhead. The wafer to be processed may be supported below the gas distribution faceplate so that process gases flow above it. During processing, a plasma may be generated by applying radio frequency (RF) power to a wafer support pedestal or pedestal that supports the wafer. The wafer support pedestal or pedestal may act as an electrode, while another portion of the gas distribution faceplate or showerhead may act as a second electrode (ground electrode), thereby generating a plasma between the wafer and the gas distribution faceplate. In some cases, the roles of the anode and cathode may be reversed, and the gas distribution Face RF power is applied to the wafer support pedestal and to another portion of the gas distribution plate or showerhead. Face It may also be applied to both the plate or another part of the showerhead, e.g., both are used as RF electrodes and the chamber wall acts as a ground electrode.

[0003] The present disclosure provides an improved gas distribution faceplate structure for CCP semiconductor processing tools. Summary of the Invention

[0004] One or more implementations of the subject matter described herein are illustrated in the accompanying drawings and the description below. Other features, aspects, and advantages will become apparent from the following description, drawings, and claims.

[0005] The inventors have determined that in gas distribution faceplates that are constrained to receive process gas from multiple discrete locations (e.g., from a gas distributor located adjacent to the faceplate), maintaining vertical gas passageways through the faceplate can result in undesirable performance issues. For example, one potential issue is that the diameter of the gas passageways at each discrete location may need to be relatively large to deliver a desired amount of process gas to the plasma formed above the semiconductor wafer. While this may not initially be a problem, such gas distribution faceplates eventually erode over time during normal processing due to the effects of the processing environment, plasma, and gas flowing through the gas passageways. As a result, the gas passageways gradually increase in size. The larger the gas passageways, the more susceptible they may be to hollow cathode discharge phenomena when generating a plasma environment. This hollow cathode discharge can result in arcing, which can damage the gas distribution faceplate, the wafer below the faceplate, and / or the gas distribution plate located adjacent to the faceplate.

[0006] The inventors have determined that the erosion rate of a gas passage is directly related to the flow rate of process gas through the gas passage. By grouping multiple gas passages at each isolated location (e.g., within each region supplied with gas from an adjacent gas distribution plate), the flow rate that previously flowed through a single gas passage can be subdivided, thereby reducing the flow rate per passage. This potentially reduces the erosion occurring in each passage. However, because the gas passages at each isolated location may need to be packed very closely together to fit within the region of each isolated location that receives process gas from the gas distribution plate, the passage outlets on the plasma-facing side may have overlapping wear areas around them, which can create other types of problems that can affect wafer quality.

[0007] It was found that the gas distribution faceplate, particularly in the area facing the wafer and surrounding the gas passage outlet, was prone to erosion of each gas passage outlet. This wear tended to create shallow depressions around each such gas passage outlet. In closely spaced gas passage outlets, these areas of wear overlap, exacerbating the wear effects in the overlapping areas. This increased wear effect can act to "focus" the plasma near the gas passage outlet, thereby increasing its density. This increased plasma density can cause bending or distortion of the plasma sheath, which can prevent ions impinging on the wafer from traveling primarily vertically. As a result, features etched by ions from the plasma source can begin to exhibit an undesirable level of "tilt," i.e., not perpendicular to the wafer plane.

[0008] To avoid these problems, the inventors have devised a gas distribution faceplate that utilizes a collection of gas passages in which the inlets on the side of the faceplate facing the gas distribution plate (e.g., facing upward) are all grouped around each separation location, while the outlets on the side of the faceplate exposed to the plasma environment in the processing chamber are more widely spaced from one another. To accommodate this different inlet and outlet spacing, at least some of the gas passages are necessarily inclined at an oblique angle (relative to the vertical axis when the gas distribution faceplate is installed in the semiconductor processing tool in its in-use configuration). The gas passage outlets may be spaced sufficiently apart to reduce or eliminate overlap between the wear areas of adjacent gas passage outlets, thereby avoiding the dishing phenomenon described above. At the same time, the use of a collection of gas passages at each separation location allows for a reduction in the flow rate of each gas passage, thereby dramatically reducing gas passage erosion and increasing the lifespan of the gas distribution faceplate (by as much as 400% in some cases).

[0009] Further details of the above-mentioned concepts are described below with reference to the drawings, with the understanding that the disclosure is not limited to the particular embodiments described herein, but also applies to other variations that will become apparent to those skilled in the art from the teachings of this disclosure.

[0010] At least the following implementations are contemplated within the scope of this disclosure.

[0011] In some implementations, a showerhead is provided. The showerhead may include a gas distribution faceplate. The gas distribution faceplate may have a first surface and a second surface opposite the first surface and may include a plurality of gas passageway groups extending from the first surface to the second surface. Each of the gas passageways may exit the second surface of the gas distribution faceplate through a corresponding outlet gas port. Each outlet gas port may be center-spaced from a nearest neighboring outlet gas port. One or more of the gas passageways in each gas passageway group may extend, at least in part, along a direction that is not parallel to a first axis perpendicular to an average midplane defined between the first surface and the second surface. Each gas passageway group may have a corresponding group of one or more inlet gas ports. Each gas passageway in each gas passageway group may exit the first surface of the gas distribution faceplate through an inlet gas port in the corresponding group of one or more inlet gas ports for that gas passageway group. Each inlet gas port in each of the one or more groups of inlet gas ports may be spaced apart on its center from each inlet gas port in each other of the one or more groups of inlet gas ports.

[0012] In some such implementations, each outlet gas port may be center-to-center from its nearest neighbor outlet gas port by at least a first distance when viewed along the first axis. Each inlet gas port in each of the one or more groups of inlet gas ports may be center-to-center from each inlet gas port in each of the one or more other groups of inlet gas ports by at least a second distance when viewed along the first axis. The first distance may be less than the second distance.

[0013] In some implementations, the second surface may have a non-planar contour and / or the first surface may have a non-planar contour.

[0014] In some implementations, the first surface may include one or more recesses, each recess having an inlet gas port for one of the sets of gas passages.

[0015] In some implementations, the gas distribution faceplate may be constructed of materials including one or more materials such as silicon, silicon carbide, ceramics, or quartz.

[0016] In some implementations, the material of the gas distribution faceplate may be silicon that is doped to be conductive.

[0017] In some implementations, the gas distribution faceplate may be electrically conductive, while in other implementations, the gas distribution faceplate may not be electrically conductive.

[0018] In some implementations, for each gas passage group, a diameter of a first circular area surrounding all of the outlet gas ports of that gas passage group may be larger than a diameter of a second circular area surrounding all of the one or more inlet gas ports of that gas passage group. The first circular area of ​​that gas passage group may be the smallest circular area surrounding the outlet gas ports of that gas passage group. The second circular area of ​​that gas passage group may be the smallest circular area surrounding the one or more inlet gas ports of that gas passage group.

[0019] In some implementations, for each gas passage group, the diameter of the first circular region may be at least twice the diameter of the second circular region.

[0020] In some implementations, each gas passage may proceed along a straight line between the outlet gas port for that gas passage and the inlet gas port for that gas passage.

[0021] In some implementations, each gas passage may include a first portion and a second portion. Each second portion of each gas passage may be fluidly interposed within the gas distribution faceplate between the outlet gas port of that gas passage and the first portion of that gas passage. Each second portion may travel along a path parallel to the first axis. Each first portion may be at an oblique angle (i.e., not parallel) to an axis parallel to the first axis.

[0022] In some implementations, the gas distribution faceplate may include a non-sacrificial portion that includes the first surface and a sacrificial portion that includes the second surface and extends to the non-sacrificial portion, and the second portion may extend through the sacrificial portion.

[0023] In some implementations, substantially all of the sacrificial portion may be configured to erode during the normal operating life of the gas distribution faceplate in normal operating applications.

[0024] In some implementations, the second portions may extend further into the non-sacrificial portion, and each second portion may be fluidly connected to the first portion of a corresponding one of the gas passages within the non-sacrificial portion.

[0025] In some implementations, for each set of gas passages having corresponding outlet gas ports and inlet gas ports, a first distance between the corresponding outlet gas ports for that set of gas passages may be greater than the center-to-center distance between the corresponding inlet gas ports for that set of gas passages.

[0026] In some implementations, at least some of the inlet gas ports may connect with multiple gas passages in the gas distribution faceplate.

[0027] In some implementations, each inlet gas port may connect with only a corresponding one of the gas passages in the gas distribution faceplate.

[0028] In some implementations, each group of one or more inlet gas ports may include a plurality of inlet gas ports arranged in one or more circles.

[0029] In some implementations, each group of one or more inlet gas ports may include 5 to 12 inlet gas ports arranged in one or more circles.

[0030] In some implementations, each group of one or more inlet gas ports may include at least 5-6 inlet gas ports arranged in a circle.

[0031] In some implementations, the outlet gas ports may be arranged in a triangular or square pattern. Each group of the inlet gas ports may not be arranged identically.

[0032] In some implementations, the apparatus includes a gas distribution Face The gas distribution plate may further include a gas distribution faceplate. The gas distribution plate may have a bottom surface facing the first surface of the gas distribution faceplate. The gas distribution plate may have a plurality of gas supply ports located on the bottom surface. Each gas supply port may overlap with a respective inlet gas port of the group of one or more inlet gas ports for a corresponding collection of gas passages when viewed along the first axis.

[0033] In some such implementations, the apparatus may further include a semiconductor processing chamber, a wafer support pedestal, and a showerhead. The gas distribution faceplate and the gas distribution plate may be part of the showerhead. The showerhead may be located above the wafer support pedestal. The wafer support pedestal, the gas distribution faceplate, and the gas distribution plate may be located within the semiconductor processing chamber. [Brief explanation of the drawings]

[0034] Various implementations disclosed herein are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings, in which like reference numerals indicate like elements.

[0035] [Figure 1] FIG. 1 is a schematic diagram of a semiconductor processing chamber.

[0036] [Figure 2] FIG. 2 illustrates an exemplary gas distribution plate and gas distribution faceplate.

[0037] [Figure 3] FIG. 3 is an isometric view of a portion of an exemplary gas distribution faceplate illustrating a collection of gas passages.

[0038] [Figure 4] FIG. 4 is an isometric view of a portion of an exemplary gas distribution faceplate illustrating another collection of gas passages.

[0039] [Figure 5] FIG. 5 is a plan view of a portion of another exemplary gas distribution faceplate.

[0040] [Figure 6] FIG. 6 is a plan view of a portion of an exemplary gas distribution faceplate.

[0041] [Figure 7] FIG. 7 illustrates another exemplary gas distribution plate and gas distribution faceplate.

[0042] [Figure 8] FIG. 8 illustrates the example gas distribution plate and gas distribution faceplate of FIG. 7 after the gas distribution faceplate has partially eroded.

[0043] [Figure 9]FIG. 9 is an isometric view of a portion of an exemplary gas distribution faceplate illustrating another collection of gas passages having non-linear flow paths.

[0044] [Figure 10] FIG. 10 illustrates another exemplary gas distribution plate and gas distribution faceplate.

[0045] [Figure 11] FIG. 11 is an isometric view of a portion of an exemplary gas distribution faceplate illustrating another collection of gas passages.

[0046] [Figure 12] FIG. 12 is an isometric view of a portion of an exemplary gas distribution faceplate illustrating a collection of gas passages having non-linear flow paths.

[0047] [Figure 13] FIG. 13 illustrates a gas distribution faceplate having a recess in the first surface.

[0048] [Figure 14] FIG. 14 illustrates a gas distribution faceplate having a recessed first surface and a contoured second surface.

[0049] [Figure 15] FIG. 15 illustrates a gas distribution faceplate having recesses in a contoured first surface.

[0050] [Figure 16] FIG. 16 illustrates a gas distribution faceplate having a contoured first surface with recesses and a contoured second surface.

[0051] [Figure 17] FIG. 17 illustrates an exemplary gas distribution faceplate showing different regions that may have angled or non-angled gas passages.

[0052] [Figure 18] FIG. 18 illustrates another exemplary gas distribution faceplate showing different regions that may have angled or non-angled gas passages.

[0053] [Figure 19] FIG. 19 illustrates yet another exemplary gas distribution faceplate, illustrating different regions that may have angled or non-angled gas passages.

[0054] [Figure 20] FIG. 20 illustrates yet another exemplary gas distribution faceplate, illustrating different regions that may have angled or non-angled gas passages. DETAILED DESCRIPTION OF THE INVENTION

[0055] Importantly, the concepts described herein are not limited to any one aspect or implementation described herein, nor are they limited to any combinations and / or permutations of such aspects and / or implementations. Moreover, each of the aspects and / or implementations of the present invention may be used alone or in combination with one or more of the other aspects and / or implementations of the present invention. For the sake of brevity, many of these permutations and combinations are not individually described and / or illustrated herein.

[0056] As mentioned above, the present disclosure relates to a gas distribution faceplate with a particular gas passage configuration that dramatically extends the life of the gas distribution faceplate by grouping the gas passages. Each group of gas passages has densely grouped inlet gas ports (e.g., within the footprint of the gas distribution plate's gas supply ports) on the upstream surface of the gas distribution faceplate and sparsely grouped outlet gas ports on the downstream surface of the gas distribution faceplate. This configuration, which includes sloping some or all of the gas passages within a group, allows the flow rate supported by each gas passage to be reduced (by increasing the number of gas passages) without causing undesirable synergistic erosion between the outlet gas ports of the gas passages within such a group. This significantly extends the life of the gas distribution faceplate compared to gas distribution faceplates without this distinctive configuration. Various implementations of such a gas distribution faceplate are described below with reference to the figures, but it is understood that the scope of the present disclosure is not limited to the implementations shown in these figures.

[0057] The gas distribution faceplates described herein may be constructed of any suitable material used in semiconductor processing chambers (e.g., silicon, silicon carbide or other ceramic material, or quartz), but in the examples described herein, are contemplated to be constructed of doped silicon (e.g., silicon with a small amount of non-silicon material intentionally added to it to make it conductive, thereby enabling it to be used as an electrode). Gas distribution faceplates using other conductive materials, such as metal or a thin layer of quartz, or various other ceramic materials to protect the conductive portions of the electrode, may also experience the localized wear rate issues described herein and may benefit from the techniques and apparatus described herein.

[0058] FIG. 1 is a schematic diagram of a semiconductor processing chamber. The semiconductor processing chamber 100 shown in FIG. 1 includes a showerhead 102. The showerhead 102 may include a gas distribution plate (GDP) 104 and a gas distribution faceplate 106. The GDP 104 may be designed to supply gas from one or more gas sources 114 to multiple gas supply ports on the bottom surface of the GDP 104. The gas distribution faceplate 106 may then include multiple groups of one or more inlet gas ports. Each group of inlet gas ports is located on the surface facing the GDP 104 such that one or more inlet gas ports in that group overlap with corresponding gas supply ports on the GDP 104. Each inlet gas port may then be fluidly connected to one or more gas passages. Each gas passage is fluidly connected to an outlet gas port located on the opposite surface of the gas distribution faceplate 106. The outlet gas ports may be distributed approximately evenly across the bottom surface of the gas distribution faceplate 106. The gas distribution faceplate 106 may be electrically connected to a radio frequency (RF) power source 112 and function as an electrode within the semiconductor processing chamber 100. A wafer 110 may be supported within the semiconductor processing chamber 100 by a wafer support pedestal 108, which may function as a complementary electrode 118. RF power may be applied to the electrode 116 while flowing process gases through the gas distribution faceplate to generate a plasma 120 in a region above the wafer 110. For example, the plasma 120 may be used to generate ions that bombard the surface of the wafer 110 and etch features into the top surface of the wafer 110.

[0059] A controller (not shown) may also be included for controlling various aspects of the operation of the process chamber (eg, controlling the flow of process gases, controlling the application of RF power to the electrodes, etc.).

[0060] While FIG. 1 provides a general overview of a semiconductor processing chamber that utilizes the gas distribution faceplate described above, various variations and specific details of such gas distribution faceplates will be described in more detail with reference to the remaining figures.

[0061] FIG. 2 illustrates an exemplary gas distribution plate and gas distribution faceplate. As can be seen in FIG. 2, a GDP 104 may be provided that includes multiple gas supply ports 124 and multiple corresponding gas distribution passages 122 configured to supply one or more process gases to the gas supply ports 124 at a desired supply profile, e.g., at the same flow rate and pressure (or at other distributions as deemed desirable for a given semiconductor process). The GDP 104 may take forms other than those shown, particularly with respect to the internal structure for supplying one or more process gases to the gas supply ports 124. The gas distribution faceplate 106 described herein may be used regardless of such structural variations in the GDP 104.

[0062] As shown, the gas distribution faceplate 106 has a first surface 126 and a second surface 128. An average mid-plane 146 may be defined between the first surface 126 and the second surface 128. (The average mid-plane 146 is understood to be a plane that is midway between two reference planes, each of which is defined by either the first surface 126 or the second surface 128. For example, each reference plane may be either one of the surfaces itself, if planar, or a plane defined by a cloud of points representing the surface (if the surface is non-planar).) The average mid-plane 146 may then be perpendicular to a first axis 144. The first axis 144 is typically aligned with the vertical axis in most semiconductor processing chambers. The first surface 126 may typically coincide or nearly coincide with the interface between the gas distribution faceplate 106 and the GDP 104, although this is not necessarily the case for all gas distribution faceplates 106. In many implementations, a thin layer of a thermally conductive material (such as a thermally or electrically conductive gasket material) may be disposed adjacent to the first surface 126 (or a majority of the first surface) to provide a seal between the GDP 104 and the gas distribution faceplate 106 and to enhance the thermal and electrical conductivity of the interface between the GDP 104 and the gas distribution faceplate 106.

[0063] As described below, in some gas distribution faceplates 106, for example, there may be localized regions of the first surface 126 that are spaced apart from the GDP 104. In such implementations, the first surface 126 is understood to include such localized regions and surrounding areas of the first surface 126 that are coincident or nearly coincident with the GDP 104 (such as when a layer of thermally conductive material is interposed between the GDP 104 and the first surface 126).

[0064] The gas distribution faceplate 106 also includes multiple clusters 130 of gas passages 132. Other gas passages 132 are shown but not individually labeled. The gas passages 132 may extend from the first surface 126 to the second surface 128; in this example, the gas passages 132 are linear holes extending along linear paths between inlet and outlet gas ports located on the first and second surfaces 126 and 128, respectively. Generally, substantially all or all of the gas passages 132 in each cluster 130 may extend along paths that are at least partially oblique to the first axis 144 (or to an axis parallel to the first axis 144), i.e., not parallel to the first axis 144. This allows the outlet gas ports in each group on the second surface 128 to be spaced farther apart than the inlet gas ports on the first surface 126.

[0065] 3 is an isometric view of a portion of an exemplary gas distribution faceplate, such as that shown in FIG. 2, illustrating the clustering of gas passages. As can be seen in FIG. 3, a group of inlet gas ports 138 are clustered within an area of ​​the first surface 126 that is within the footprint of the gas supply ports 124 (the cross-hatched circular areas represent the boundaries of the gas supply ports 124 on the GDP 104, although this area is not necessarily circular). As can be further seen, each gas passage 132 is fluidly connected to an outlet gas port 134 located on the second surface 128. In this example, the centers of the group of inlet gas ports 138 are aligned with the centers of the group of outlet gas ports 134.

[0066] The illustrated implementation includes twelve gas passages 132 connected to two concentrically arranged inlet gas ports 138, each of which has six inlet gas ports 138. However, it is understood that other implementations may include a greater or lesser number of gas passages 132 and / or inlet gas ports 138. For example, some implementations may include three gas passages, four gas passages, five gas passages, six gas passages, seven gas passages, eight gas passages, nine gas passages, ten gas passages, eleven gas passages, thirteen gas passages, etc. In some cases, a group may include as few as two gas passages, but this may not be effective in extending the life of the gas distribution faceplate 106. Additionally, while all illustrated gas distribution faceplates show only collections of multiple gas passages, it is understood that some implementations of gas distribution faceplates may include, in addition to collections having a specific number of multiple gas passages, a) one or more collections having a different number of gas passages, and / or b) one or more portions in which only one gas passage is provided for fluid connection with a gas supply port (instead of collections of multiple gas passages). For example, if a gas distribution faceplate having one gas passage per gas supply port of a GDP experiences outlet gas port erosion that varies with radial distance from the central axis of the gas distribution faceplate (e.g., outlet gas port erosion at a first rate at the periphery of the gas distribution faceplate (which rate may generally be ideal in terms of achieving a desired lifespan of the gas distribution faceplate), outlet gas port erosion at a second rate twice the first rate at the mid-diameter of the gas distribution faceplate, and outlet gas port erosion at a third rate twice the second rate at the center of the gas distribution faceplate), the gas passages near the periphery of such a gas distribution faceplate may remain unchanged. That is, each gas supply port of a GDP near the periphery of the gas distribution faceplate may be fluidly connected to only a single gas passage at the gas distribution faceplate / GDP interface, while the gas passages located at the mid-diameter and center of the gas distribution faceplate may be replaced with a collection of gas passages. For example, a gas distribution faceplate may be configured with a plurality of gas passages. Face Each gas passage for a gas supply port located near the mid-diameter of the plate may be replaced with a collection of two gas passages. That is, each gas supply port of a GDP near the mid-diameter of the gas distribution faceplate may be fluidly connected with a collection of two gas passages, and each gas passage for a gas supply port near the center of the gas distribution faceplate may be replaced with a collection of four gas passages. That is, each gas supply port of a GDP near the center of the gas distribution faceplate may be fluidly connected with a collection of four gas passages. It is understood that other configurations of gas distribution faceplates are within the scope of the present disclosure. Furthermore, in implementations with single gas passage portions each configured to fluidly connect with a single gas supply port, it is understood that such gas passages may be parallel to the central axis of the gas distribution faceplate or, like the grouped gas passage portions, may be at an oblique angle to the central axis of the gas distribution faceplate.

[0067] The gas passages may be perforations having diameters ranging from about 0.010 inches (0.254 mm) to 0.1 inches (2.54 mm) inclusive (e.g., 0.010 inches, 0.020 inches, 0.030 inches, 0.040 inches, 0.050 inches, 0.060 inches, 0.070 inches, 0.080 inches, 0.090 inches, 0.100 inches), and ranges of ±0.005 inches (1.27 mm) from each of these values. In some implementations, the gas passages 132 in the gas distribution faceplate 106 may all have the same diameter, while in other implementations, the gas passages 132 may have different diameters, for example, to allow for fine tuning of the flow resistance of each gas passage 132. In some implementations, one or more of the gas passages 132 may vary in dimension along its length, for example, the gas passage 132 may have a first diameter at the inlet gas port 138 and a second, smaller diameter at a location within the gas distribution faceplate 106. This may allow for further tailoring of the gas flow characteristics of each gas passage 132. Such a feature may be used to offset the effects of differences in flow resistance between the gas passages 132 that may arise due to differences in length between the gas passages 132.

[0068] The gas distribution faceplates 106 described herein may be relatively thick, for example, about 1 inch to 2 inches (about 2.54 mm to 50.8 mm) thick in some cases or locations. This allows the exit gas ports 134 of the gas passages 132 to be spaced apart from one another at the second surface 128 to a desired degree in some implementations, with the gas passages 132 only needing to be tilted relatively slightly from vertical (e.g., ±10° from vertical). The gas passages 132 may be manufactured using any suitable technique, such as mechanical drilling, laser drilling, electro-discharge drilling, or water jet drilling.

[0069] 4 is an isometric view of a portion of an exemplary gas distribution faceplate illustrating another grouping of gas passages 132. The illustrated configuration is identical to the configuration shown in FIG. 3, except that the centers of the groups of inlet gas ports 138 are not aligned with the centers of the groups of outlet gas ports 134. While this may result in some asymmetry in the lengths of the gas passages 132 in such a grouping, such a configuration may allow the position of each group of inlet gas ports 138 to be adjusted to match the position of the gas supply ports 124 of the GDP 104 (which are not necessarily aligned with the centers of the groups of outlet gas ports 134 to which the gas passages 132 that are supplied with gas from the gas supply ports 124 are connected).

[0070] This can be more clearly understood with reference to FIGS. 5 and 6. FIG. 5 is a plan view of a portion of another exemplary gas distribution faceplate. As can be seen in FIG. 5, the gas distribution faceplate 106 may have a plurality of outlet gas ports 134 that can be arranged in a space-filling array (e.g., a triangular array). In this array, the outlet gas ports 134 are spaced from adjacent outlet gas ports 134 by at least a first distance 140 center-to-center. It is understood that the outlet gas ports 134 may be arranged in other configurations (e.g., a square array or any other arrangement determined to achieve the desired gas distribution characteristics, including an arrangement in which the outlet gas ports are not equidistantly spaced from adjacent outlet gas ports). For example, in some implementations, the outlet gas ports of each group of gas passages may be arranged in a circular pattern centered on the gas supply port of the GDP associated with that group, resulting in different spacing between adjacent outlet gas ports. For example, for a given outlet gas port, the two outlet gas ports on either side of the given outlet gas port on the same circular pattern may be spaced equidistant from the given outlet gas port, but the spacing between the given outlet gas port and the nearest outlet gas port on an adjacent circular pattern of outlet gas ports may differ from this equidistant spacing.

[0071] In this example, multiple clusters 130 (each surrounded by a dashed triangular boundary with an internal hatching) of gas passages 132 (represented by a thick line connecting inlet gas ports 138 and outlet gas ports 134) are shown. Each cluster 130 includes 12 outlet gas ports 134, 12 inlet gas ports 138, and 12 gas passages 132. Each inlet gas port 138 in each cluster 130 is shown within a circular cross-hatched area corresponding to the location of one of the gas supply ports 124 of the GDP 104. In this exemplary implementation, each gas supply port 124 is approximately centrally located within each group of 12 outlet gas ports 134. Therefore, the 12 gas passages 132 in each cluster 130 are generally only three different lengths. For example, for each group of 12 outlet gas ports 134, three outlet gas ports 134 are provided arranged in a first circle around the center of the gas supply port 124 (and have gas passages 132 of a first length), three more outlet gas ports 134 are provided arranged in a second circle around the center of the gas supply port 124 (and have gas passages 132 of a second length that is longer than the first length), and the remaining six outlet gas ports 134 are provided arranged along a third circle centered on the center of the gas supply port 124 (and have gas passages of a third length that is longer than the second length).

[0072] 6 is a plan view of a portion of an exemplary gas distribution faceplate, having many of the same features as described above with reference to FIG. 5. However, the gas supply ports 124 in FIG. 6 are arranged according to a plurality of hole patterns 152 (e.g., a circular array of gas supply ports 124 in this example). As a result, the gas supply ports 124 are not aligned with the centers of each group of outlet gas ports 134. As a result, the length and angle that the gas passages 132 may have may be different for each gas passage 132 in a given cluster 130. In some cases, these length differences may have a negligible effect on the uniformity of gas delivery for a given process; however, in other implementations, the gas passages 132 may be designed with different shapes so that the flow resistance of each gas passage is approximately the same, as described above.

[0073] 5 and 6 includes additional outlet gas ports 134, for example, near the periphery of the illustrated portion. These are also part of the respective clusters 130 and connect with the respective gas passages 132 and inlet gas ports 138, but are not individually labeled (or shown connected to the gas passages 132) to avoid cluttering the drawings. Additionally, the triangular and circular regions associated with the clusters 130 and gas supply ports 124 in the peripheral region are not shown or labeled.

[0074] Furthermore, the first distance 140 between the outlet gas ports 134 in a cluster 130 may be much longer than the distance between the inlet gas ports 138 in the same cluster. For example, in some implementations, the inlet gas ports 138 of a cluster 130 may all be located within a first circular area (e.g., the smallest circular area bordering the outermost inlet gas port 138 in that cluster 130), and the outlet gas ports 134 of that cluster may all be located within a second circular area (e.g., the smallest circular area bordering the outermost outlet gas port 134 in that cluster 130), where the second circular area may have a larger diameter than the first circular area, for example. In some implementations, the second circular area may have a diameter that is at least 2, 3, 4, or 5 times (up to ±0.1, 0.2, 0.3, 0.4, or 0.5) the diameter of the first circular area. In some implementations, the first circular region may have a diameter within ±0.05 inch (±1.27 mm) of, for example, 0.1 inch, 0.2 inch, 0.3 inch, 0.4 inch, 0.5 inch, 0.6 inch, 0.7 inch, 0.8 inch, 0.9 inch, or 1 inch. In other implementations, the first circular region may have a diameter greater than 1 inch (2.54 mm).

[0075] The first distance 140 may be selected, for example, to reduce or eliminate overlap of localized wear areas that may occur around each outlet gas port 134. For example, if each wear area has a nominal outer diameter of approximately X inches, the outlet gas ports 134 may be spaced at least X inches apart from one another. It is understood that the size of the wear areas around the outlet gas ports 134 may vary depending on process conditions, and therefore the first distance 140 may also be determined depending on the specific wear effects resulting from a given semiconductor process. In some implementations, for example, the first distance 140 may be at least 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, 10 mm, 11 mm, 12 mm, 13 mm, 14 mm, 15 mm, 16 mm, 17 mm, 18 mm, 19 mm, or 20 mm within ±0.1 mm, ±0.2 mm, ±0.3 mm, ±0.4 mm, or ±0.5 mm.

[0076] In the above example, the gas passages 132 are simple straight holes formed at various angles. While such an implementation may be suitable for some semiconductor processes, an alternative implementation may provide a longer gas distribution faceplate life. Such an alternative implementation is shown in FIG. 7, which illustrates another exemplary gas distribution plate and gas distribution faceplate.

[0077] The GDP 104 and gas distribution faceplate 106 shown in FIG. 7 are identical to those shown in FIG. 2, except that each gas passage 132 does not travel along a single, straight path between its respective inlet gas port 138 and outlet gas port 134. FIG. 9 is a detailed view of a portion of a gas distribution faceplate 106 having such gas passages 132. As can be seen, each gas passage 132 has two portions: a first portion 154 that travels along a path along a first direction 145 that is at an oblique angle α with respect to the first axis 144 (or with respect to an axis parallel to the first axis 144), and a second portion 156 that is parallel to the first axis 144. (Note that while FIG. 7 shows the central gas passage 132 of each assembly 130 as straight, it should be understood that this is merely for purposes of illustration.) The first portion 154 and second portion 156 of each gas passage 132 may be fluidly connected to each other, for example, the first portion 154 may be drilled from the first surface 126 of the gas distribution faceplate 106 and the second portion 156 may be drilled from the second surface 128 of the gas distribution faceplate 106 to merge with the first portion 154.

[0078] The second portion 156 may have a length that is longer than the expected erosion depth in the second surface 128 of the gas distribution faceplate 106 during its desired operating life. For example, the gas distribution faceplate 106 may have a non-sacrificial portion (e.g., a portion near the GDP 104 and including the first surface 126) and a sacrificial portion (e.g., a portion on the underside of the gas distribution faceplate 106 that includes the second surface 128 and extends to the non-sacrificial portion). The sacrificial portion of the gas distribution faceplate 106 is designed to provide material that erodes away in normal operating applications such that all or nearly all of the sacrificial portion is removed by the end of the normal operating life of the gas distribution faceplate, while all or nearly all of the non-sacrificial portion of the gas distribution faceplate remains. It is understood that the sacrificial portion and the non-sacrificial portion may refer to different portions of a single, continuous structure and not necessarily two separate portions.

[0079] For example, if the gas distribution faceplate 106 is expected to erode by approximately 2 mm during its lifetime (thus the thickness of the sacrificial portion is approximately 2 mm), the length of the second portion may be set to at least that value or to a value greater than 2 mm (e.g., 2.5 mm). This allows the first distance 140 (see FIG. 6 or FIG. 5) between the outlet gas ports 134 to remain constant over the lifetime of the gas distribution faceplate 106 as the gas distribution faceplate 106 erodes over time, as shown, for example, in FIG. 8 (which illustrates an eroded gas distribution faceplate 106 with the eroded sacrificial portion 106' of the gas distribution faceplate 106 shown in dotted outline). In contrast, in an implementation such as that shown in FIG. 2, as its second surface 128 erodes, the center-to-center distance between adjacent outlet gas ports 134 changes over time due to erosion, e.g., the first distance 140 decreases and the distance between the outlet gas ports 134 of different groups 130 increases. Therefore, if such distance variations result in undesirable variations in process uniformity for wafers processed using such gas distribution faceplate 106, the variation of FIG. 7 may be used.

[0080] In some implementations, the length of the second portion 156 may be at least twice the thickness of the sacrificial portion of the gas distribution faceplate 106, i.e., the expected erosion depth at the second surface 128. For example, as described above, if the gas distribution faceplate 106 is expected to erode approximately 2 mm during its lifetime, the length of the second portion may be set to at least that value or greater than 4 mm (e.g., 4.5 mm). This configuration may provide additional depth to the second portion 156. This allows the second portion 156 to have sufficient depth near the end of the operational life of the gas distribution faceplate 106 after the sacrificial portion has been removed or nearly removed, thereby allowing erosion within the remaining second portion 156 to be managed in a manner that avoids undesirable changes to the performance of the gas distribution faceplate 106.

[0081] It is understood that the above description of the characteristics of the second portion is applicable to various anticipated erosion scenarios, including, for example, erosion scenarios in which the sacrificial portion of the second surface 128 of the gas distribution faceplate 106 has a thickness within ±0.1 mm, ±0.2 mm, ±0.3 mm, ±0.4 mm, or ±0.5 mm of 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, or 10 mm. In other implementations, the gas distribution faceplate may have non-linear gas passages in which the first and second portions are reversed. That is, portions of the gas passages that travel along a path parallel to the central axis of the gas distribution faceplate may be fluidly interposed between the first surface of the gas distribution faceplate and portions of the gas passages that are at an oblique angle relative to the central axis of the gas distribution faceplate.

[0082] It is recognized that the second surface 128 of the gas distribution faceplate 106 described herein may be planar, as shown in the implementations described above, or may be non-planar, e.g., contoured, as shown in FIG. 10 (which illustrates another exemplary gas distribution plate and gas distribution faceplate).

[0083] 10 are similar to those in FIGS. 2 and 7, and the above descriptions also apply to the corresponding elements in FIG. 10. As can be seen from FIG. 10, the lower, or second, surface 128 of the gas distribution faceplate 106 has a contoured surface. A similar collection of gas passages 132 may also be used with a contoured gas distribution faceplate. While the illustrated example uses non-linear gas passages 132 (similar to those in FIG. 7), linear gas passages 132 may alternatively be used. In some implementations where non-linear gas passages 132 are used, the lengths of the second portions 156 may be designed to be the same, as shown, or alternatively, may be designed to all be drilled to the same depth relative to the first surface 126 of the gas distribution faceplate 106 (in which case the minimum depth of the second portions 156 relative to the second surface 128 may be set to a value greater than the expected amount of erosion of the gas distribution faceplate 106 over its lifetime).

[0084] In some implementations, two or more gas passages 132 in a collection 130 of gas passages 132 may share a common inlet gas port 138. That is, a group of one or more inlet gas ports for a given collection may have only a single inlet gas port, as shown in FIGS. 11 and 12 (both of which are isometric views of a portion of an exemplary gas distribution faceplate showing a collection of gas passages). In FIG. 11, all of the gas passages 132 are straight gas passages, while in FIG. 12, all of the gas passages 132 are two-part gas passages 132 having a first portion 154 and a second portion 156. In either case, all of the gas passages 132 share a single common inlet gas port 138. Note that in this case, the inlet gas port 138 is offset relative to the gas supply ports 124 from the center of the circular area representing the gas supply ports 124. In general, it may be preferable to position the inlet gas ports 138 on the gas distribution faceplate 106 so that the inlet gas ports 138 are not located directly below where process gas is introduced into the gas supply ports 124. This offset between the gas supply ports 124 and the inlet gas ports 138 may be used in examples where only a single inlet gas port 138 receives gas from a particular gas supply port 124. In this example, the gas supply ports 124 introduce gas into themselves at the center of each circular area. Thus, the inlet gas ports 138 are offset from the center of the circular area representing the gas supply ports 124. This positioning scheme may also be used in implementations described above (e.g., implementations where each gas passage 132 has a separate inlet gas port 138). This offset hole arrangement may reduce the likelihood of a plasma arc event occurring in the gas supply port 124 area.

[0085] In other implementations, multiple inlet gas ports 138 may be provided for a given collection of gas passages 132, with it being understood that the multiple gas passages 132 may still terminate at a common inlet gas port 138 for that collection 130. For example, a given collection 130 may have 12 gas passages 132 and only four inlet gas ports 138, with each inlet gas port 138 fluidly connected to three gas passages 132 in the gas distribution faceplate 106.

[0086] As noted above, the first surface of the gas distribution faceplate may have localized regions where the first surface is offset a distance from the GDP. Various examples of such faceplates are described below with reference to Figures 13-16. For convenience, generally corresponding features in Figures 13-16 are designated with the same last two digits as reference numerals used in the previous figures. It is understood that the above description of such similar features is equally applicable to the corresponding structures in Figures 13-16 unless otherwise noted in the following description.

[0087] 13-16 all include gas passages that are non-linear, i.e., gas passages that have a first portion that is at an oblique angle relative to an axis parallel to the central axis and a second portion that is parallel to the central axis, it is understood that other similar faceplates (such as that shown in FIG. 2) in which the gas passages are linear are also within the scope of this disclosure. Also, while FIGS. 13-16 are intended to illustrate gas distribution faceplates in which the first surface has a localized region that is offset a distance from the GDP, it is understood that similar gas distribution faceplates may be provided that do not have such localized regions.

[0088] FIG. 13 illustrates a gas distribution faceplate having recesses in its first surface. As can be seen, the first surface 1326 of the gas distribution faceplate 1306 includes a plurality of recesses 1358. Each recess 1358 is aligned with one of the gas supply ports 1324. The recesses may, for example, have the same footprint (cross-sectional shape and size when viewed along the central axis of the gas distribution faceplate) as the gas supply ports 1324, or may have a larger footprint, as shown. The recesses may, for example, be cylindrical bores, although other shapes are possible. This effectively aligns the gas supply ports 1324 with the gas distribution faceplate. 1306 The diameter of the recess 1358 acts to expand inward. gas If larger than the supply ports 1324, this allows for a larger placement area of ​​the inlet gas ports of the gas passages 1332 relative to each gas supply port 1324.

[0089] FIG. 14 illustrates a gas distribution faceplate having recesses on a first surface and a contoured second surface. In this example, the recesses 1458 vary in depth so that the lengths of the gas passages 1432 remain densely packed together regardless of the thickness of the gas distribution faceplate 1406. For example, because the thickness of the gas distribution faceplate 1406 is greater in the center than near the edges, the recesses 1458 in the center of the gas distribution faceplate 1406 are deeper than the recesses 1458 near the edges. This reduces the variation in the lengths of the gas passages 1432 in each cluster 1430, resulting in more uniform gas passage lengths. This reduces the variation in gas flow between the gas passages 1432 and results in more uniform gas distribution through the gas distribution faceplate 1406.

[0090] Figure 15 illustrates a gas distribution faceplate having recesses in its contoured first surface. In Figure 15, the GDP 1504, in contrast to the GDPs described above, has a non-planar surface facing the gas distribution faceplate 1506. The first surface 1526 of the gas distribution faceplate 1506 may have complementary contours. In this example, the depths of the recesses 1558 are different so that the gas passages 1532 of each assembly 1530 are approximately the same length (or at least not affected by the contours of the first surface 1526).

[0091] 16 illustrates a gas distribution faceplate having a contoured first surface with recesses and a contoured second surface. In this example, both the first surface 1626 and the second surface 1628 are contoured (although they have the same contours in this example, in other implementations the contours of the first surface 1626 and the second surface 1628 may be different). The recesses 1658 may be the same depth (to increase the area in which inlet gas ports can be located, as discussed above with reference to FIG. 13) or may be different depths, for example, to accommodate gas distribution faceplates 1606 of different thicknesses.

[0092] It is understood that gas distribution faceplates employing angled gas passages described herein may, in some cases, include both such angled gas passages and vertical passages (passages extending along an axis parallel to the first axis described above). For example, if a given gas distribution faceplate experiences dramatically increased erosion around the exit gas ports of gas passages located near the periphery of the faceplate rather than near its center, the gas passages in the inner region of the faceplate may be vertical (when installed in a semiconductor processing chamber in which the faceplate is used) or parallel to the first axis, while the gas passages in the outer region of the faceplate may be implemented using a collection of obliquely angled gas passages. Some examples of such faceplates are described below.

[0093] FIG. 17 illustrates an exemplary gas distribution faceplate, showing different regions that may have angled or non-angled gas passages. In FIG. 17 , an angled passage region 1760 is located in the center of the gas distribution faceplate 1706, and a non-angled passage region 1762 surrounds it. The gas passages in the angled passage region 1760 may be realized by a collection of gas passages at an oblique angle with respect to a first axis (which, for FIG. 17 and the figures described below, may be understood to extend in a direction perpendicular to the plane of the page on which the figures are placed), as described above with reference to at least FIGS. 3-6 . The gas passages in the non-angled passage region 1762 may be, for example, a collection of non-angled gas passages, i.e., gas passages that extend their entire length along an axis perpendicular to the plane of the page. In some implementations, some or all of the gas passages in the non-angled passage region 1762 may not be arranged in a collection. That is, a single non-angled passage may be provided at each location corresponding to the location of a different one of some or all of the gas supply ports in the gas distribution plate that can be configured to supply process gas to the gas distribution faceplate within the non-angled passage region 1762.

[0094] 18 illustrates another exemplary gas distribution faceplate, showing different regions that may have sloped or non-slant gas passages. The implementation of FIG. 18 is similar to FIG. 17, except that the sloped passage region 1760 and the non-slant passage region 1762 are swapped (the sloped passage region 1760 surrounds the non-slant passage region 1762).

[0095] FIG. 19 illustrates yet another exemplary gas distribution faceplate, illustrating different regions that may have angled or non-angled gas passages. In FIG. 19, three distinct regions are provided: an annular angled passage region 1760, a circular angled passage region 1760, and an annular non-angled passage region 1762 radially interposed therebetween. It is understood that in some cases, the regions may be reversed. For example, the central-most region may be a non-angled passage region 1762, with different types of regions alternating radially outward. It is also understood that some gas distribution faceplates may have two, three, or more regions of angled and / or non-angled passages. For example, some gas distribution faceplates may have four, five, six, or more alternating regions of angled and / or non-angled passages (and some gas distribution faceplates may have no non-angled gas passages (potentially except for the non-angled gas passages in the center)).

[0096] Figure 20 illustrates yet another exemplary gas distribution faceplate, illustrating different regions that may have sloped or non-slant gas passages. Figure 20 is similar to Figure 18, except that a third sloped / non-slant mixed passage region 1764 is shown between the non-slant passage region 1762 and the sloped passage region 1760. Slanted / Non-Slanted Mixed Passage Region 1764 may include both angled passages as described above and non-angled passages as also described above.

[0097] It is understood that implementations such as those described above that include both angled and non-angled passage regions may be used when certain regions of the gas distribution faceplate have higher flow rates and therefore potentially faster erosion rates than other regions of the gas distribution faceplate. In such cases, a collection of angled passages may be used in the regions with higher flow rates and potentially faster erosion to reduce the erosion effects, while non-angled passages may be used in regions that do not exhibit such significant erosion effects. This may increase the potential lifespan of the gas distribution faceplate while reducing manufacturing costs. For example, angled passages generally require more material removal than non-angled passages (due to the slope of the passages), thereby increasing the machining time required to manufacture angled passages compared to non-angled passages. With angled passages, the tool head that machines the passages may need to be rotated about one, two, or three axes, rather than just repositioned in X, Y, and Z positions (as is typically the case with non-angled passages), to ensure that the passages are machined along the correct angular direction. This tool positioning may require additional machining time not required with non-angled passages. By using non-angled passages in areas where the angled passages are deemed less effective in reducing erosion rates, the additional cost of machining angled passages in those areas may be avoided, while still using angled passages in areas where enhanced erosion control may be needed. It is also understood that the angled and non-angled passage regions described above may represent areas with angled passages that may have different characteristics. For example, gas passage clusters may be provided with four angled passages per cluster, with the gas passages extending along an axis 30° from the first axis, and another region may be provided with six angled passages per cluster, with the gas passages extending along an axis 40° from the first axis. The present disclosure is directed to such implementations and other variations anticipated therefrom.

[0098] It is understood that in some implementations of gas distribution faceplates as described herein, the presence of angled gas passage clusters within the gas distribution faceplate can be inferred based on the hole spacing apparent from the exterior of the gas distribution faceplate. For example, each inlet or outlet gas port on either the first or second surface of the gas distribution faceplate may be associated with a “nearest neighbor distance,” which is the center-to-center distance between that inlet or outlet gas port and the nearest inlet or outlet gas port, respectively. In gas distribution faceplates with angled and non-angled passage regions, where the non-angled passage regions are also comprised of clusters of multiple non-angled passages, such that each cluster is positioned at a location corresponding to a gas supply port of the gas distribution plate, the average nearest neighbor distance of the outlet gas ports of the angled passages may be greater than the average nearest neighbor distance of the outlet gas ports of the non-angled passages. In other words, the outlet gas ports of the angled passages may be more spread out or more evenly distributed within the angled passage region than the outlet gas ports of the non-angled passages within the non-angled passage region. For example, in some implementations, the average nearest neighbor distance of the exit gas ports of the angled passages may be 20% or more, 30% or more, 40% or more, 50% or more, 60% or more, 70% or more, 80% or more, 90% or more, or 100% or more greater than the average nearest neighbor distance of the exit gas ports of the non-angled passages.

[0099] In some implementations, the sloped gas passage regions and the non-slant gas passage regions may be distinguished from one another by the ratio of the average nearest neighbor distance of the outlet gas ports to the average nearest neighbor distance of the inlet gas ports in each such region. For example, because the positions of the inlet and outlet gas ports in the non-slant passage region are identical, the ratio of the average nearest neighbor distance of the outlet gas ports to the average nearest neighbor distance of the inlet gas ports in that region is 1:1. In contrast, the ratio of the average nearest neighbor distance of the outlet gas ports to the average nearest neighbor distance of the inlet gas ports in the sloped passage region is greater than 1:1. For example, in some implementations, the ratio may be 1.5:1 or greater, 2:1 or greater, 2.5:1 or greater, 3:1 or greater, 3.5:1 or greater, 4:1 or greater, 4.5:1 or greater, or 5:1 or greater.

[0100] It is also understood that, in general, for a collection of angled gas passages, the ratio of the average nearest neighbor distance of the outlet gas ports within each collection of angled gas passages (assessed for each outlet gas port in that collection relative to the other outlet gas ports in that collection) to the average nearest neighbor distance of the inlet gas ports within the same collection of angled gas passages (assessed for each inlet gas port in that collection relative to the other inlet gas ports in that collection) will be greater than 1:1, e.g., in some implementations, 1.5:1 or greater, 2:1 or greater, 2.5:1 or greater, 3:1 or greater, 3.5:1 or greater, 4:1 or greater, 4.5:1 or greater, or 5:1 or greater.

[0101] In the above description, it is understood that the average nearest neighbor distance for a given collection of ports may be determined by determining the corresponding nearest neighbor distance for each port in the collection of ports, summing the nearest neighbor distances for all ports in the collection, and then dividing by the number of ports in the collection. If a given port has more than one "nearest neighbor," i.e., if both or all of the ports closest to that port are the same distance away from the given port, the nearest neighbor distance may be selected as the distance from that port to any one of the nearest neighbor ports.

[0102] In some implementations, a controller may be provided. The controller may be part of a system. The system may include the examples described above and may further be operatively connected to receive information from and / or control various valves, mass flow controllers, pumps, etc. Such systems may include semiconductor processing equipment including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (such as a wafer pedestal and gas flow systems). These systems may be integrated with electronics for controlling the operation of the system before, during, and after processing of the semiconductor wafer or substrate. The electronics may also be referred to as a "controller" and may control various components or subparts of one or more systems. The controller may be programmed to control any of the processes disclosed herein depending on the processing requirements and / or type of system. These processes may include the supply of various gases, such as through a faceplate as described herein, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, flow settings, fluid supply settings, and position and operation settings.

[0103] Broadly, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software to receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips as firmware that store program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions may be instructions communicated to the controller as various individual settings (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. In some implementations, the operational parameters may be part of a recipe defined by a process engineer to accomplish one or more processing steps in the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0104] In some implementations, the controller may be part of or coupled to a computer, where the computer may be integrated with the system, coupled to the system, or otherwise networked with the system, or a combination thereof. For example, the controller may reside in the “cloud” or in all or part of a fab host computer system. This enables remote access to wafer processing. The computer may enable remote access to the system to monitor the progress of a manufacturing process, examine past manufacturing process history, or examine trends or performance indicators from multiple manufacturing processes, modify parameters for a current process, configure subsequent processing steps, or initiate a new process. In some examples, a process recipe may be provided to the system from a remote computer (e.g., a server) over a network, where the network may include a local network or the Internet. The remote computer may include a user interface that allows input or programming of parameters and / or settings. These parameters and / or settings are then communicated from the remote computer to the system. In some examples, the controller receives instructions as data, which specifies parameters for each processing step to be performed in one or more operations. It should be understood that these parameters may be specific to the type of process being performed and the type of tool the controller is configured to cooperate with or control. Thus, as described above, the controller may be distributed, such as by having one or more individual controllers that are networked and operate toward a common purpose, such as the process and control described herein. An example of a distributed controller for such a purpose includes one or more integrated circuits mounted in the chamber that communicate with one or more integrated circuits located remotely (e.g., at the platform level or as part of a remote computer).These integrated circuits work together to control the process in the chamber.

[0105] Non-limiting examples of systems include a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing system related to or usable in the fabrication and / or production of semiconductor wafers.

[0106] As described above, depending on one or more process steps being performed by the tool, the controller may communicate with one or more of other tool circuits or tool modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used in material transport to and from tool locations and / or load ports within a semiconductor manufacturing factory.

[0107] For purposes of this disclosure, the term "fluidically connected" is used in reference to volumes, plenums, holes, etc. that are connectable to one another to form a fluid connection, similar to how the term "electrically connected" is used in reference to components that are connected to one another to form an electrical connection. The term "fluidically intervening" may refer to a component, volume, plenum, or hole that is fluidly connected to at least two other components, volumes, plenums, or holes, where fluid flowing from one of the at least two other components, volumes, plenums, or holes to the other or one of the remaining components first flows through the "fluidically intervening" component before reaching the other or one of the remaining components. For example, if a pump is fluidly intervening between a reservoir and an outlet, fluid flowing from the reservoir to the outlet will first flow through the pump before reaching the outlet.

[0108] When phrases such as "for each <item> of one or more <items>," "for each <item> of one or more <items>," and the like are used herein, they should be understood to include both groups of single items and groups of multiple items. That is, the phrase "each" is used in the sense that it is used in programming languages ​​to refer to each item, whatever the parent collection of the referenced items. For example, if the parent collection of items is a single item, then the term "each" refers only to that single item and does not imply that there must be at least two of those items (despite the fact that dictionaries often define "each" to mean "one of two or more things").

[0109] The use of sequence indicators (e.g., (a), (b), (c), etc.) in this disclosure and claims should be understood as not implying any particular order or sequence unless such order or sequence is explicitly indicated. For example, where there are three steps labeled (i), (ii), and (iii), it should be understood that these steps may be performed in any order (and even simultaneously, unless otherwise prohibited) unless otherwise specified. For example, if step (ii) involves manipulating an element produced in step (i), step (ii) may be considered to occur at some point after step (i). Similarly, if step (i) involves manipulating an element produced in step (ii), it should be understood that the opposite is true.

[0110] When terms such as "about," "approximately," "approximately," "nominal," and the like are used in reference to a quantity or similar quantifiable characteristic, they should be understood to include values ​​within ±10% of the stated value or relationship (and the stated actual value or relationship), unless otherwise specified.

[0111] It is recognized that all combinations of the above-described concepts (to the extent that these concepts are not mutually inconsistent) are contemplated as part of the inventive subject matter disclosed herein. In particular, all combinations of the subject matter of the claims appearing at the end of this disclosure are contemplated as part of the inventive subject matter disclosed herein. It is also recognized that terms explicitly used in this specification that may also appear in any disclosures incorporated by reference are to be given the meaning most consistent with the particular concepts disclosed herein.

[0112] While the above disclosure has been described in terms of particular exemplary implementations, it should be understood that the disclosure is not limited to these described examples, but may apply to similar modifications and arrangements, and such similar modifications and arrangements are also considered to be within the scope of the disclosure. The present invention can be realized, for example, in the following manner. Application example 1: A shower head, a gas distribution faceplate; the gas distribution faceplate has a first surface and a second surface opposite the first surface; the gas distribution faceplate includes a plurality of gas passage groups extending from the first surface to the second surface; each of the gas passages exiting the second surface of the gas distribution faceplate through a corresponding outlet gas port; each outlet gas port is spaced apart on its center from its nearest neighbor; one or more of the gas passages in each gas passage group extend at least partially along a direction that is not parallel to a first axis that is perpendicular to a mean midplane defined between the first surface and the second surface; each gas passage assembly having a corresponding group of one or more inlet gas ports; each gas passage in each gas passage group exits the first surface of the gas distribution faceplate through an inlet gas port in a corresponding group of the one or more inlet gas ports for that gas passage group; each inlet gas port in each of the one or more groups of inlet gas ports is spaced apart on its center from each inlet gas port in each other of the one or more groups of inlet gas ports; Shower head. Application example 2: The shower head according to Application Example 1, each outlet gas port is spaced apart on center from its nearest neighbor by at least a first distance; each inlet gas port in each of the one or more groups of inlet gas ports is spaced apart on center by at least a second distance from each inlet gas port in each other of the one or more groups of inlet gas ports; The first distance is less than the second distance, Shower head. Application example 3: The shower head according to Application Example 1, For at least a first one of the gas passage assemblies, each outlet gas port in the first group is center-to-center spaced a corresponding first nearest neighbor distance from the nearest neighbor outlet gas port in the first group; each inlet gas port of the corresponding group of one or more inlet gas ports in the first group is spaced center-to-center from a nearest neighbor inlet gas port in the first group by a corresponding second nearest neighbor distance; a ratio of the average first nearest neighbor distance of the outlet gas ports in the first group to the average second nearest neighbor distance of a corresponding group of the one or more inlet gas ports in the first group is greater than 1:1; Shower head. Application example 4: The shower head according to Application Example 1, the second surface has a non-planar contour; Shower head. Application example 5: The shower head according to Application Example 1, the first surface has a non-planar contour; Shower head. Application example 6: The shower head according to Application Example 1, the first surface includes one or more recesses, each recess having a corresponding group of the one or more inlet gas ports for a different one of the sets of gas passages; Shower head. Application example 7: The shower head according to Application Example 1, the gas distribution faceplate is constructed of a material comprising one or more materials selected from the group consisting of silicon, silicon carbide, ceramics, and quartz; Shower head. Application example 8: The shower head according to Application Example 7, the material of the gas distribution faceplate is electrically conductively doped silicon; Shower head. Application example 9: The shower head according to Application Example 1, the gas distribution faceplate is electrically conductive; Shower head. Application example 10: The shower head according to Application Example 1, For each gas passage assembly, a diameter of a first circular area surrounding all of the outlet gas ports of the gas passage assembly is greater than a diameter of a second circular area surrounding all of the one or more inlet gas ports of the gas passage assembly; the first circular area of ​​the gas passage assembly is the smallest circular area surrounding the exit gas port of the gas passage assembly; the second circular area of ​​the gas passage assembly is the smallest circular area surrounding the one or more inlet gas ports of the gas passage assembly. Shower head. Application example 11: The showerhead according to Application Example 10, For each gas passage group, the diameter of the first circular region is at least twice the diameter of the second circular region. Shower head. Application example 12: The shower head according to Application Example 1, each gas passageway proceeds along a straight line between the outlet gas port of that gas passageway and the inlet gas port of that gas passageway; Shower head. Application example 13: The shower head according to Application Example 1, Each gas passage includes a first portion and a second portion; each second portion of each gas passage fluidly interposed within the gas distribution faceplate between the outlet gas port for that gas passage and the first portion for that gas passage; each second portion travels along a path parallel to said first axis; Each first portion is not parallel to the first axis. Shower head. Application 14: The showerhead according to Application Example 13, the gas distribution faceplate includes a non-sacrificial portion that includes the first surface and a sacrificial portion that includes the second surface and extends to the non-sacrificial portion; the second portion extending through the sacrificial portion; Shower head. Example 15: The showerhead according to Application Example 14, substantially all of the sacrificial portion is configured to erode during a normal operating life of the gas distribution faceplate in normal operating applications. Shower head. Application 16: The shower head according to Application Example 14, the second portion extends further into the non-sacrificial portion; each second portion fluidly connects with the first portion of a corresponding gas passage within the non-sacrificial portion; Shower head. Application 17: The shower head according to Application Example 1, for each set of gas passages having corresponding outlet and inlet gas ports, a first distance between the corresponding outlet gas ports for that set of gas passages is greater than a center-to-center distance between the corresponding inlet gas ports for that set of gas passages; Shower head. Application 18: The shower head according to Application Example 1, at least some of the inlet gas ports connect with a plurality of gas passages in the gas distribution faceplate; Shower head. Example 19: The shower head according to Application Example 1, each inlet gas port connects with only a corresponding one of the gas passages in the gas distribution faceplate; Shower head. Example 20: The shower head according to Application Example 1, each group of one or more inlet gas ports includes one or more circularly arranged plurality of inlet gas ports; Shower head. Example 21: The shower head according to Application Example 1, Each group of one or more inlet gas ports includes 5 to 12 inlet gas ports arranged in one or more circles; Shower head. Application example 22: The shower head according to Application Example 1, Each group of one or more inlet gas ports includes at least 5 to 6 inlet gas ports arranged in a circular pattern; Shower head. Application 23: The shower head according to Application Example 1, The outlet gas ports are arranged in a triangular or square pattern, and each group of the inlet gas ports is not arranged identically. Shower head. Application 24: The shower head according to Application Example 1, further comprising a gas distribution plate; the gas distribution plate has a bottom surface facing the first surface of the gas distribution faceplate; the gas distribution plate having a plurality of gas supply ports located on the bottom surface; each gas supply port overlaps with a respective inlet gas port of the group of one or more inlet gas ports for a corresponding collection of gas passages when viewed along the first axis; Shower head.

Claims

1. A shower head, a gas distribution faceplate; the gas distribution faceplate has a first surface and a second surface opposite the first surface; the gas distribution faceplate includes a plurality of gas passage assemblies; Each of the gas passages exiting the first side of the gas distribution faceplate through corresponding inlet gas ports in the first side of the gas distribution faceplate; and exiting the second side of the gas distribution faceplate through corresponding exit gas ports in the second side of the gas distribution faceplate; each outlet gas port is spaced apart on its center from its nearest neighbor; one or more of the gas passages in each gas passage group extend at least partially along a direction that is not parallel to a first axis that is perpendicular to a mean midplane defined between the first surface and the second surface; the front inlet gas ports in each group of gas passages are arranged in one or more circles; the inlet gas ports in each collection of gas passages are grouped around a respective center, the respective centers being spaced apart and distributed across the first surface of the gas distribution faceplate; at least one of the one or more circular arrangements in each gas passage group includes three or more gas passages; each inlet gas port of each group of gas passages is spaced apart on its center from each inlet gas port in each of the other groups of gas passages; Shower head.

2. 10. The showerhead of claim 1, each outlet gas port is spaced apart on center from its nearest neighbor by at least a first distance; each inlet gas port of each group of gas passages is spaced on center by at least a second distance from each inlet gas port in each of the other groups of gas passages; The first distance is less than the second distance. Shower head.

3. 10. The showerhead of claim 1, For at least a first one of the gas passage assemblies, each outlet gas port in the first group is center-to-center spaced a corresponding first nearest neighbor distance from the nearest neighbor outlet gas port in the first group; each inlet gas port of the gas passages in the first group is spaced center-to-center from a nearest neighbor inlet gas port in the first group by a corresponding second nearest neighbor distance; a ratio of the average first nearest neighbor distance of the outlet gas ports in the first group to the average second nearest neighbor distance of the inlet gas ports of the gas passages in the first group is greater than 1:1 Shower head.

4. 10. The showerhead of claim 1, the second surface has a non-planar contour; Shower head.

5. 10. The showerhead of claim 1, the first surface has a non-planar contour; Shower head.

6. 10. The showerhead of claim 1, the first surface includes one or more recesses, each recess having the inlet gas port for a different one of the set of gas passages disposed therein; Shower head.

7. 10. The showerhead of claim 1, the gas distribution faceplate is constructed of a material including one or more materials selected from the group consisting of silicon, silicon carbide, ceramics, and quartz; Shower head.

8. 8. The showerhead of claim 7, the material of the gas distribution faceplate is electrically conductively doped silicon; Shower head.

9. 10. The showerhead of claim 1, the gas distribution faceplate is electrically conductive; Shower head.

10. 10. The showerhead of claim 1, For each gas passage assembly, a diameter of a first circular area surrounding all of the outlet gas ports of the gas passage assembly is greater than a diameter of a second circular area surrounding all of the inlet gas ports of the gas passage assembly; the first circular area of ​​the gas passage assembly is the smallest circular area surrounding the exit gas port of the gas passage assembly; the second circular area of ​​the gas passage assembly is the smallest circular area surrounding the inlet gas port of the gas passage assembly; Shower head.

11. 11. The showerhead of claim 10, For each gas passage group, the diameter of the first circular region is at least twice the diameter of the second circular region. Shower head.

12. 10. The showerhead of claim 1, each gas passageway proceeds along a straight line between said outlet gas port for that gas passageway and said inlet gas port for that gas passageway; Shower head.

13. 10. The showerhead of claim 1, Each gas passage includes a first portion and a second portion; each second portion of each gas passage fluidly interposed within the gas distribution faceplate between the outlet gas port of that gas passage and the first portion of that gas passage; each second portion travels along a path parallel to the first axis; each first portion is not parallel to the first axis; Shower head.

14. 14. The showerhead of claim 13, the gas distribution faceplate includes a non-sacrificial portion that includes the first surface and a sacrificial portion that includes the second surface and extends to the non-sacrificial portion; the second portion extending through the sacrificial portion; Shower head.

15. 15. The showerhead of claim 14, substantially all of the sacrificial portion is configured to erode during a normal operating life of the gas distribution faceplate in normal operating applications. Shower head.

16. 15. The showerhead of claim 14, the second portion extends further into the non-sacrificial portion; each second portion fluidly connects with the first portion of a corresponding one of the gas passages within the non-sacrificial portion; Shower head.

17. 10. The showerhead of claim 1, for each set of gas passages having corresponding outlet and inlet gas ports, a first distance between the corresponding outlet gas ports for that set of gas passages is greater than a center-to-center distance between the corresponding inlet gas ports for that set of gas passages; Shower head.

18. 10. The showerhead of claim 1, at least some of the inlet gas ports connect with a plurality of gas passages in the gas distribution faceplate; Shower head.

19. 10. The showerhead of claim 1, each inlet gas port connects with only a corresponding one of the gas passages in the gas distribution faceplate; Shower head.

20. 10. The showerhead of claim 1, the inlet gas ports in each group of gas passages are arranged in a plurality of concentric circles; Shower head.

21. 10. The showerhead of claim 1, Within each collection of gas passages there are 5 to 12 inlet gas ports; Shower head.

22. 10. The showerhead of claim 1, Within each collection of gas passages there are 5-6 inlet gas ports; Shower head.

23. 10. The showerhead of claim 1, The outlet gas ports are arranged in a triangular or square pattern, and each group of the inlet gas ports is not arranged identically. Shower head.

24. 10. The showerhead of claim 1, further comprising a gas distribution plate; the gas distribution plate has a bottom surface facing the first surface of the gas distribution faceplate; the gas distribution plate having a plurality of gas supply ports located on the bottom surface; each gas supply port overlaps with a respective inlet gas port of a corresponding one of the collections of gas passages when viewed along the first axis; Shower head.

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