Upper electrode unit and substrate processing apparatus including the same

Abstract

The present invention provides an apparatus for processing a substrate, the apparatus for processing a substrate comprising: a housing having an internal space, a lower electrode unit for supporting a substrate in the internal space, an upper electrode unit facing the lower electrode unit, and a gas supply unit for supplying a process gas to the internal space, the upper electrode unit including a dielectric plate facing an upper surface of the substrate supported by the lower electrode unit, a support body for supporting the dielectric plate, the support body and the dielectric plate being combined with each other to form a buffer space, the gas supply unit supplying the process gas to the internal space through the buffer space, and a baffle ring disposed on a flow path of the process gas flowing from the buffer space to the internal space.

Description

[Technical Field]

[0001] The present invention relates to an upper electrode unit and a substrate processing apparatus including the upper electrode unit. [Background technology]

[0002] Plasma is an ionized gas state consisting of ions, radicals, and electrons. Plasma can be generated by extremely high temperatures, strong electric fields, or RF electromagnetic fields. Semiconductor device manufacturing processes include ashing and etching processes that use plasma to remove film on substrates such as wafers. The ashing and etching processes are carried out when ion and radical particles contained in the plasma collide or react with film on the substrate.

[0003] Meanwhile, an apparatus for processing a substrate using plasma, such as a plasma etching apparatus, has a housing with a processing space. A process gas is supplied to the processing space and excited to generate plasma. The process gas can include various types of gases. For example, the process gas can include N2 and CF4. To improve the uniformity of the plasma processing on the substrate, it is important to thoroughly mix the various types of gases contained in the process gas. If this is not done, the degree of excitation into the plasma state may vary depending on the degree of gas mixing, resulting in poor uniformity of the plasma processing.

[0004] In addition, among plasma etching apparatuses, a bevel etching apparatus for processing the edge region of a substrate generally uses a single gas supply line to supply process gas to the edge region of the substrate. However, supplying process gas through a single gas supply line has limitations in that it is difficult to supply the process gas at a uniform flow rate and velocity and it is difficult to sufficiently mix various types of gases contained in the process gas. Summary of the Invention [Problem to be solved by the invention]

[0005] An object of the present invention is to provide an upper electrode unit capable of efficiently processing substrates, and a substrate processing apparatus including the upper electrode unit.

[0006] Another object of the present invention is to provide an upper electrode unit capable of improving the uniformity of plasma processing, and a substrate processing apparatus including the upper electrode unit.

[0007] Another object of the present invention is to provide an upper electrode unit capable of sufficiently mixing process gases excited into a plasma state, and a substrate processing apparatus including the upper electrode unit.

[0008] Another object of the present invention is to provide an upper electrode unit capable of sufficiently mixing process gases during supply thereof, and a substrate processing apparatus including the same.

[0009] The problems to be solved by the present invention are not limited to the above-mentioned problems, and problems not mentioned will be clearly understood by a person having ordinary skill in the art to which the present invention pertains from this specification and the attached drawings. [Means for solving the problem]

[0010] The present invention provides an apparatus for processing a substrate, the apparatus including a housing having an internal space, a lower electrode unit for supporting a substrate in the internal space, an upper electrode unit facing the lower electrode unit, and a gas supply unit for supplying a process gas into the internal space, the upper electrode unit including a dielectric plate facing an upper surface of the substrate supported by the lower electrode unit, a support body for supporting the dielectric plate, the support body and the dielectric plate being combined with each other to form a buffer space, and the gas supply unit supplying the process gas to the internal space through the buffer space, and a baffle ring disposed on a flow path of the process gas flowing from the buffer space to the internal space.

[0011] According to one embodiment, the space between the support body and the dielectric plate may be defined by a gas channel through which the process gas flows, the gas channel being fluidly connected to the internal space, and the baffle ring may be disposed in the buffer space.

[0012] According to one embodiment, the baffle ring may be made of a porous material to allow the process gas to flow through.

[0013] According to one embodiment, the baffle ring may be made of porous ceramics having a plurality of through holes formed therein through which the process gas can flow.

[0014] According to one embodiment, the baffle ring may be a perforated plate having holes formed therein through which the process gas can flow.

[0015] According to one embodiment, the baffle ring may be made of a material including metal.

[0016] According to an embodiment, the upper electrode unit may further include an upper edge electrode supported by the support body and provided to surround the dielectric plate when viewed from above.

[0017] According to an embodiment, the diameter of the inner periphery of the upper edge electrode when viewed from above may be larger than the diameter of the outer periphery of the dielectric plate.

[0018] According to one embodiment, the space between the upper edge electrode and the dielectric plate may be defined by a gas outlet that discharges the gas flowing in the gas channel to the edge region of the substrate supported by the lower electrode unit, the gas outlet being fluidly connected to the gas channel and the internal space.

[0019] According to one embodiment, the lower electrode unit may include a chuck for supporting the substrate, an insulating ring configured to surround the chuck when viewed from above, and a lower edge electrode configured to surround the insulating ring when viewed from above.

[0020] According to an embodiment, the lower electrode unit may further include a power supply member for applying an ALP power to the chuck.

[0021] According to an embodiment, the gas supply unit may include a gas supply source that supplies the process gas, which is a mixture of different types of gases, and a gas supply line that supplies the process gas to the buffer space.

[0022] According to an embodiment, the gas supply source may be configured to supply the process gas including at least two of O2, N2, Ar, SF6, and CF4.

[0023] The present invention also provides an upper electrode unit for a bevel etching apparatus for processing an edge region of a substrate, the upper electrode unit including: a dielectric plate facing the substrate; a support body supporting the dielectric plate, the support body and the dielectric plate defining a buffer space into which a process gas containing at least two different types of gases is supplied; and a baffle ring disposed on a flow path of the process gas flowing from the buffer space toward the edge region of the substrate.

[0024] According to an embodiment, a space between the support body and the dielectric plate may be defined as a gas channel through which the process gas flows, and the baffle ring may be disposed in the buffer space.

[0025] According to one embodiment, the baffle ring may be made of a perforated material having a plurality of through holes formed therein through which the process gas can flow.

[0026] According to one embodiment, the baffle ring may be a perforated plate having holes formed therein through which the process gas can flow.

[0027] According to one embodiment, the through-holes may be formed in an inclined direction when viewed from the front cross section.

[0028] According to an embodiment, the upper electrode unit may further include an upper edge electrode supported on an edge region of the support body when viewed from above and configured to surround the dielectric plate.

[0029] According to one embodiment, when viewed from above, the upper edge electrode and the dielectric plate are spaced apart from each other, and the space between the upper edge electrode and the dielectric plate may be defined by a gas discharge portion that discharges the process gas flowing in the gas channel to the edge region of the substrate. [Effects of the Invention]

[0030] According to one embodiment of the present invention, substrates can be processed efficiently.

[0031] Additionally, according to an embodiment of the present invention, the uniformity of plasma processing can be improved.

[0032] Furthermore, according to an embodiment of the present invention, the process gases excited into a plasma state can be mixed thoroughly.

[0033] Furthermore, according to an embodiment of the present invention, the process gases can be sufficiently mixed while being supplied.

[0034] The effects of the present invention are not limited to those described above, and effects not mentioned will be clearly understood by those skilled in the art to which the present invention pertains from this specification and the accompanying drawings. [Brief explanation of the drawings]

[0035] [Figure 1] FIG. 1 is a schematic view of a substrate processing facility according to an embodiment of the present invention. [Figure 2] FIG. 2 is a cross-sectional view showing an embodiment of a substrate processing apparatus provided in the process chamber of FIG. [Figure 3] FIG. 3 is a drawing showing an example of the baffle ring of FIG. [Figure 4] FIG. 4 is a diagram showing an example of the substrate processing apparatus of FIG. 2 performing a plasma processing process. [Figure 5] FIG. 5 is a view showing another example of the baffle ring of FIG. [Figure 6] FIG. 6 is a diagram illustrating the structure of another example of the baffle ring of FIG. [Figure 7] FIG. 7 is a cross-sectional view of a portion of the baffle ring for explaining the structure of another example of the baffle ring of FIG. [Figure 8] FIG. 8 is a cross-sectional view of a portion of the baffle ring for explaining the structure of another example of the baffle ring of FIG. DETAILED DESCRIPTION OF THE INVENTION

[0036] [Best Mode for Carrying Out the Invention] Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily understand the present invention. However, the present invention may be embodied in various different forms and is not limited to the embodiments described herein. Furthermore, in describing preferred embodiments of the present invention in detail, detailed description of related well-known functions or configurations will be omitted if it is determined that such detailed description may unnecessarily obscure the gist of the present invention. Furthermore, the same reference numerals will be used throughout the drawings to refer to parts having similar functions and operations.

[0037] "Including" a certain element does not mean excluding other elements, but may further include other elements, unless specifically stated to the contrary. Specifically, terms such as "comprise" or "have" are intended to specify the presence of features, numbers, steps, operations, elements, parts, or combinations thereof described in the specification, and should be understood as not precluding the presence or possibility of addition of one or more other features, numbers, steps, operations, elements, parts, or combinations thereof.

[0038] The singular expression includes the plural expression unless the context clearly dictates otherwise. Also, in the drawings, the shapes and sizes of elements may be exaggerated for clearer explanation.

[0039] Hereinafter, an embodiment of the present invention will be described in detail with reference to FIGS.

[0040] 1 is a schematic view of a substrate processing equipment according to an embodiment of the present invention. Referring to FIG. 1, the substrate processing equipment 1 includes an equipment front end module (EFEM) 20 and a processing module 30. The equipment front end module 20 and the processing module 30 are arranged in one direction.

[0041] The front end module 20 of the equipment has a load port 10 and a transfer frame 21. The load port 10 is disposed in front of the front end module 20 in a first direction 11. The load port 10 has a plurality of supports 6. The supports 6 are arranged in a row in a second direction 12 and receive carriers 4 (e.g., cassettes, FOUPs, etc.) that accommodate substrates W to be provided for a process and substrates W that have been processed. The carriers 4 accommodate substrates W to be provided for a process and substrates W that have been processed. The transfer frame 21 is disposed between the load port 10 and the processing module 30. The transfer frame 21 includes a first transfer robot 25 disposed therein that transfers substrates W between the load port 10 and the processing module 30. The first transfer robot 25 moves along a transfer rail 27 provided in the second direction 12 to transfer substrates W between the carriers 4 and the processing module 30.

[0042] The processing module 30 includes a load lock chamber 40, a transfer chamber 50, and a process chamber 60. The processing module 30 can receive the substrate (W) returned from the equipment front end module 20 and process the substrate (W).

[0043] The load lock chamber 40 is disposed adjacent to the transfer frame 21. In one example, the load lock chamber 40 may be disposed between the transfer chamber 50 and the front end module 20 of the equipment. The load lock chamber 40 provides a waiting space for a substrate (W) to be provided for a process before being transferred to the process chamber 60, or for a substrate (W) that has completed a process before being transferred to the front end module 20 of the equipment.

[0044] The transfer chamber 50 can return the substrate (W). The transfer chamber 50 is disposed adjacent to the load lock chamber 40. The transfer chamber 50 has a polygonal body when viewed from above. Referring to FIG. 1, the transfer chamber 50 has a pentagonal body when viewed from above. The load lock chamber 40 and a plurality of process chambers 60 are disposed around the outside of the body. Passages (not shown) for the substrate (W) to enter and exit are formed on each side wall of the body, and the passages connect the transfer chamber 50 to the load lock chamber 40 or the process chambers 60. Each passage is provided with a door (not shown) that opens and closes the passage and seals the interior. A second transfer robot 53 is disposed within the interior space of the transfer chamber 50 to transfer the substrate (W) between the load lock chamber 40 and the process chambers 60. The second transfer robot 53 transfers unprocessed substrates (W) waiting in the load lock chamber 40 to the process chamber 60, or transfers processed substrates (W) to the load lock chamber 40. The second transfer robot 53 can also load and unload substrates (W) into and from the internal space 102 of the housing 100 (described below). The second transfer robot 53 can also transfer substrates (W) between the process chambers 60 to sequentially provide the substrates (W) to the plurality of process chambers 60. When the transfer chamber 50 has a pentagonal body as shown in FIG. 1, the load lock chambers 40 are disposed on the side walls adjacent to the front end module 20 of the equipment, and the process chambers 60 are disposed consecutively on the remaining side walls. The transfer chamber 50 can be provided in various shapes in addition to the above shape depending on the required process module.

[0045] The process chamber 60 may be disposed adjacent to the transfer chamber 50. The process chamber 60 is disposed along the periphery of the transfer chamber 50. A plurality of process chambers 60 may be provided. A process may be performed on a substrate (W) in each process chamber 60. The process chamber 60 receives the substrate (W) from the second transfer robot 53, processes the substrate (W), and provides the processed substrate (W) to the second transfer robot 53. The process performed in each process chamber 60 may be different from each other.

[0046] A substrate processing apparatus for performing a plasma process within the process chamber 60 will now be described in detail. The substrate processing apparatus described below will be described as being configured to perform a plasma processing process on the edge region of a substrate within the process chamber 60. However, the present invention is not limited thereto, and the substrate processing apparatus described below may be applied in the same or similar manner to various chambers in which substrate processing is performed. The substrate processing apparatus may be applied in the same or similar manner to various chambers in which a plasma processing process is performed on a substrate.

[0047] FIG. 2 is a diagram showing an embodiment of a substrate processing apparatus provided in the process chamber of FIG.

[0048] Referring to FIG. 2, the substrate processing apparatus provided in the process chamber 60 performs a predetermined process on a substrate (W) using plasma. For example, the substrate processing apparatus can etch or ash a film on the substrate (W). The film can be various types of film, such as polysilicon, silicon oxide, and silicon nitride. The film can also be a natural oxide film or a chemically generated oxide film. The film can also be a by-product generated during the process of processing the substrate (W). The film can also be impurities that adhere to and / or remain on the substrate (W).

[0049] A substrate processing apparatus can perform a plasma process on a substrate (W). For example, the substrate processing apparatus can process the substrate (W) by supplying a process gas and generating plasma from the supplied process gas. The substrate processing apparatus can process the edge region of the substrate (W) by supplying a process gas and generating plasma from the supplied process gas. Hereinafter, the substrate processing apparatus will be described as a bevel etching apparatus that performs an etching process on the edge region of the substrate (W) by way of example.

[0050] The substrate processing apparatus may include a housing 100 , a lower electrode unit 300 , an upper electrode unit 500 , a gas supply unit 800 , and a controller 900 .

[0051] The housing 100 may define an interior space 102. The housing 100 may include an upper housing 110 (an example of a first housing) and a lower housing 120 (an example of a second housing). The upper housing 110 and the lower housing 120 may be combined with each other to define the interior space 102. The upper housing 110 may be rotatably fastened to the lower housing 120 by a rotation coupling (not shown). For example, the upper housing 110 and the lower housing 120 may be fastened to each other by the rotation coupling, which may be a hinge device.

[0052] The upper housing 110 may be in an open position or a closed position. Hereinafter, the position of the upper housing 110 in which the upper housing 110 and the lower housing 120 are combined to define the interior space 102 will be referred to as the closed position, and the position of the upper housing 110 in which the interior space 102 is exposed to the outside will be referred to as the open position.

[0053] In addition, the atmosphere of the internal space 102 is isolated from the outside when the upper housing 110 is in the closed position, and the internal space 102 isolated from the outside can be maintained in a low-pressure state close to vacuum (vacuum pressure atmosphere) while the substrate (W) is being processed. In addition, the housing 100 can be made of a material including metal. In addition, the inner surface of the housing 100 can be coated with an insulating material. In addition, the housing 100 can be grounded.

[0054] The housing 100 may also be a vacuum chamber. For example, exhaust holes 104 may be formed on the bottom of the housing 100. The plasma (P) generated in the internal space 102 or the gases (G1, G2) supplied to the internal space 102 may be exhausted to the outside through the exhaust holes 104. By-products generated during the process of treating the substrate (W) using the plasma (P) may also be exhausted to the outside through the exhaust holes 104. The exhaust holes 104 may also be connected to an exhaust line (not shown). The exhaust line may be connected to a decompression member that provides a reduced pressure. The decompression member may provide a reduced pressure to the internal space 102 through the exhaust line.

[0055] The lower electrode unit 300 can support a substrate (W) in the internal space 102. The lower electrode unit 300 can include a chuck 310, a power supply member 320, an insulating ring 330, a lower edge electrode 350, and an actuation member 370.

[0056] The chuck 310 can support the substrate W in the internal space 102. The chuck 310 can have a support surface that supports the substrate W. The chuck 310 can have a circular shape when viewed from above. The chuck 310 can have a smaller diameter than the substrate W when viewed from above. Therefore, the central region of the substrate W supported by the chuck 310 can rest on the support surface of the chuck 310, and the edge region of the substrate W may not come into contact with the support surface of the chuck 310.

[0057] A heating means (not shown) may be provided inside the chuck 310. The heating means (not shown) may heat the chuck 310. The heating means may be a heater. Also, a cooling channel 312 may be formed in the chuck 310. The cooling channel 312 may be formed inside the chuck 310. A cooling fluid supply line 314 and a cooling fluid discharge line 316 may be connected to the cooling channel 312. The cooling fluid supply line 314 may be connected to a cooling fluid supply source 318. The cooling fluid supply source 318 may store and / or supply a cooling fluid to the cooling fluid supply line 314. Also, the cooling fluid supplied to the cooling channel 312 may be discharged to the outside through the cooling fluid discharge line 316. The cooling fluid stored and / or supplied by the cooling fluid supply source 318 may be cooling water or a cooling gas. Also, the shape of the cooling channel 312 formed in the chuck 310 is not limited to the shape shown in FIG. 2 and may be variously modified. Furthermore, the structure for freezing the chuck 310 is not limited to a structure for supplying a cooling fluid, but may be provided in various structures (for example, a cooling plate, etc.) capable of freezing the chuck 310.

[0058] The power supply member 320 can supply RF (radio frequency) power to the chuck 310. The power supply member 320 can include a power supply 322, a matching box 324, and a power supply line 326. The power supply 322 can be a bias power supply. The power supply 322 can be an RF power supply. The power supply 322 can be connected to the chuck 310 via the power supply line 326. The matching box 324 can be provided on the power supply line 326 to perform impedance matching.

[0059] The insulating ring 330 may be provided to have a ring shape when viewed from above. The insulating ring 330 may be configured to surround the chuck 310 when viewed from above. For example, the insulating ring 330 may have a ring shape. The insulating ring 330 may be provided using an insulating material. The insulating ring 330 may electrically isolate the lower edge electrode 350 and the chuck 310. The chuck 310 may be provided using a material containing metal. The insulating ring 330 may be provided using an insulating material such as ceramics.

[0060] In addition, the upper surface of the insulating ring 330 may have a stepped shape. The height of the inner upper surface of the insulating ring 330, which is adjacent to the central region of the substrate (W), may be higher than the height of the outer upper surface of the insulating ring 330, which is far from the central region of the substrate (W). The inflow of plasma (P), which will be described later, is relatively smooth to the upper region of the outer upper surface of the insulating ring 330, while the inflow of plasma (P) is blocked or suppressed to the upper region of the inner upper surface of the insulating ring 330, thereby improving the processing efficiency for the edge region of the substrate (W).

[0061] The lower edge electrode 350 may be configured to surround the insulating ring 330 when viewed from above. The lower edge electrode 350 may have a ring shape when viewed from above. The lower edge electrode 350 may be grounded. When viewed from above, the lower edge electrode 350 may be disposed at a position where plasma (P) can be generated at the edge region of the substrate (W) supported by the chuck 310.

[0062] The driving member 370 can raise and lower the chuck 310. The driving member 370 can include a driver 372 and a shaft 374. The shaft 374 can be coupled to the chuck 310. The shaft 374 can be connected to the driver 372. The driver 372 can raise and lower the chuck 310 in the vertical direction via the shaft 374. As the driving member 370 raises and lowers the chuck 310, the distance between the upper surface of the substrate (W) supported by the chuck 310 and the lower surface of the dielectric plate 510 (described later) can be adjusted.

[0063] The upper electrode unit 500 may be provided to face the lower electrode unit 300. The upper electrode unit 500 may be provided to face the upper surface of the substrate (W) supported by the lower electrode unit 300. The upper electrode unit 500 may include a dielectric plate 510, a support body 530, a baffle ring 540, and an upper edge electrode 550.

[0064] The dielectric plate 510 may be made of a dielectric material. The dielectric plate 510 may be made of a material including ceramics. The dielectric plate 510 may be disposed at a position facing the upper surface of the substrate (W) supported by the chuck 310. The lower surface of the dielectric plate 510 may have a stepped shape. For example, the lower surface of the dielectric plate 510 may include a first lower surface 511 and a second lower surface 512. The first lower surface 511 may be adjacent to the central region of the substrate (W) when viewed from above. The second lower surface 512 may be adjacent to the edge region of the substrate (W) when viewed from above. The heights of the first lower surface 511 and the second lower surface 512 may be different from each other. For example, the lower surface of the dielectric plate 510 may have a stepped shape such that the height of the first lower surface 511 is lower than the height of the second lower surface 512. The inflow of plasma (P) is relatively smooth in the lower region of the second lower surface 512 of the stepped dielectric plate 510, and the inflow of plasma (P) is relatively suppressed in the upper region of the first lower surface 511, thereby further improving the processing efficiency for the edge region of the substrate (W).

[0065] The support body 530 can support the dielectric plate 510 and an upper edge electrode 550, which will be described later. The support body 530 can fix the dielectric plate 510 and a lower edge electrode 550, which will be described later, to the housing 100. The support body 530 can be made of a material including metal. The support body 530 can be grounded. The support body 530 can be electrically connected to the housing 100 and grounded. The support body 530 can be combined with the dielectric plate 510 to form (define) a buffer space (GB) and a gas channel (GP).

[0066] The support body 530 may include an edge lower surface 531, a middle lower surface 532, and a center lower surface 533. The edge lower surface 531, the middle lower surface 532, and the center lower surface 533 may contact the center of the substrate (W) in this order when viewed from above. The middle lower surface 532 and the center lower surface 533 may be formed as a concave shape facing upward on the lower surface of the support body 530. The edge lower surface 531 and the middle lower surface 532 may have a generally ring shape when viewed from above. An upper edge electrode 550 (described below) may be provided on the edge lower surface 531. The middle lower surface 532 may define a gas channel (GP). The center lower surface 533 may define a buffer space (GB).

[0067] A central lower surface 533 of the support body 530 and an upper surface of a central region of the upper surface of the dielectric plate 510 may be combined with each other to define a buffer space (GB). The buffer space (GB) may be a space to which process gases are supplied by a gas supply unit 800 (described later). The process gases supplied to the buffer space (GB) may be mixed in the buffer space (GB).

[0068] The middle lower surface 532 of the support body 530 and the upper surface of the edge region of the dielectric plate 510 may be combined with each other to define a gas channel (GP). The gas channel (GP) may function as an intermediate gas flow path through which process gas supplied to the buffer space (GB) flows toward the edge region of the substrate (W). The gas channel (GP) may be fluidically connected to the buffer space (GB). The gas channel (GP) may be fluidically connected to a gas discharge portion (GD), which will be described later. The gas channel (GP) may be fluidically connected to the inner space 102.

[0069] An upper edge electrode 550 may be installed on the lower edge surface 531 of the support body 530. The grounded upper edge electrode 550 may be provided on the lower edge surface 531 of the support body 530. The upper edge electrode 550 may be disposed to face the lower edge electrode 350. The upper edge electrode 550 may have a ring shape when viewed from above. The upper edge electrode 550 may be an opposing electrode that faces the lower edge electrode 350.

[0070] The upper edge electrode 550 may be provided to surround the dielectric plate 510 when viewed from above. The upper edge electrode 550 may be provided to be spaced apart from the dielectric plate 510 when viewed from above. The inner periphery of the upper edge electrode 550 and the outer periphery of the dielectric plate 510 may be combined with each other to define a gas discharge portion GD that supplies a process gas to an edge region of the substrate W.

[0071] The baffle ring 540 may be disposed on a flow path of the process gas flowing from the buffer space (GB) to the internal space 102. The baffle ring 540 may have a ring shape when viewed from above. The baffle ring 540 may be disposed in the buffer space (GB). The baffle ring 540 may be made of a porous material through which the process gas can flow, as shown in FIG. 3. For example, the baffle ring 540 may be made of porous ceramics having a plurality of through-holes through which the process gas can flow. Thus, the process gas supplied to the buffer space (GB) can be thoroughly mixed in the buffer space (GB) and then uniformly supplied to the gas channels (GP) through the through-holes formed in the baffle ring 540.

[0072] The gas supply unit 800 may supply a gas to the internal space 102. The gas supply unit 800 may supply a first gas (G1) and a second gas (G2) to the internal space 102. The gas supply unit 800 may include a first gas supply part 810, a first gas supply line 820, a second gas supply part 830, and a second gas supply line 840.

[0073] The first gas supply unit 810 may supply a first gas (G1) to the internal space 102. The first gas (G1) may be an inert gas such as nitrogen or argon. The first gas supply unit 810 may supply the first gas (G1) to a central region of the substrate (W) supported by the chuck 310. The first gas supply unit 810 may supply the first gas (G1) to a first gas supply line 820. One end of the first gas supply line 820 may be connected to the first gas supply unit 810, and the other end may be fluidly connected to a gas supply end 513 formed in the central region of the dielectric plate 510. The first gas (G1) supplied by the first gas supply unit 810 may be supplied to the central region of the substrate (W) through the first gas supply line 820. The first gas (G1) supplied by the first gas supply unit 810 may be supplied to the space between the dielectric plate 510 and the substrate (W) through the first gas supply line 820.

[0074] The second gas supply unit 830 may supply a second gas (G2) to the internal space 102. The second gas (G2) may be a process gas excited into a plasma state. The second gas (G2) may be a process gas containing a mixture of different gases. For example, the second gas supply unit 830 may be configured to supply the second gas (G2) containing at least two of O2, N2, Ar, SF6, and CF4. The second gas supply unit 830 may supply the second gas (G2) to a second gas supply line 840. One end of the second gas supply line 840 may be connected to the second gas supply unit 810 and the other end may be fluidly connected to the buffer space (GB). The second gas (G1), which is a mixed gas supplied by the second gas supply source 810, may be supplied to the buffer space (GB), which has a larger volume than the second gas supply line 840 and the gas channel (GP), and thus the flow rate may be slow. Therefore, the second gas G2 can be thoroughly mixed in the buffer space GB. The second gas G2 supplied by the second gas supply unit 830 can be supplied to the edge region of the substrate W through the second gas supply line 840.

[0075] The controller 900 can control the substrate processing apparatus to perform the plasma processing process described below.

[0076] The controller 900 can control the substrate processing apparatus to perform the substrate processing method described below. The controller 900 can also include a process controller implemented by a microprocessor (computer) that controls the substrate processing apparatus; a user interface implemented by a keyboard through which an operator inputs commands to manage the substrate processing apparatus and a display that visualizes the operating status of the substrate processing apparatus; and a memory unit that stores a control program for controlling the process controller to execute processes performed in the substrate processing apparatus, and a program for causing each component to execute processes according to various data and processing conditions, i.e., a process recipe. The user interface and memory unit can be connected to the process controller. The process recipe can be stored in a storage medium within the memory unit, which can be a hard disk, a portable disk such as a CD-ROM or DVD, or a semiconductor memory such as a flash memory.

[0077] 4 is a diagram illustrating an example of a plasma processing process performed by the substrate processing apparatus of FIG. 2. Referring to FIG. 4, the substrate processing apparatus according to an embodiment of the present invention can process the edge region of a substrate (W). For example, the substrate processing apparatus can generate plasma (P) at the edge region of the substrate (W) to process the edge region of the substrate (W). For example, the substrate processing apparatus can perform a bevel etching process to process the edge region of the substrate (W).

[0078] To perform a bevel etching process on the substrate (W), the driving member 370 moves the chuck 310 upward, thereby narrowing the gap between the substrate (W) and the dielectric plate 510 .

[0079] When processing the edge region of a substrate (W), the substrate processing apparatus may have a first gas supply unit 810 supplying a first gas (G1) to the central region of the substrate (W), and a second gas supply unit 830 supplying a second gas (G2) to the edge region of the substrate (W). The second gas (G2) supplied by the second gas supply unit 830 is a process gas, and is excited into a plasma (P) state to process the edge region of the substrate (W). For example, a thin film on the edge region of the substrate (W) may be etched by the plasma (P). Furthermore, the first gas (G1) supplied to the central region of the substrate (W) is an inert gas, and the first gas (G1) prevents the second gas (G2) from flowing into the central region of the substrate (W), thereby improving the processing efficiency for the edge region of the substrate (W).

[0080] In the above example, the baffle ring 540 is described as being made of a porous material with a plurality of through holes formed therein, but the present invention is not limited to this. For example, as shown in Fig. 5, a baffle ring 540a according to another embodiment may be made of a ring-shaped perforated plate with a plurality of through holes 541a formed therein, i.e., a mesh-type perforated plate. The baffle ring 540a may be made of a material containing metal.

[0081] In the above example, the through-holes formed in the baffle rings 540, 540a are uniformly formed throughout the entire area of ​​the baffle rings 540, 540a, but this is not limiting. For example, as shown in FIG. 6, the through-holes 541b formed in the baffle ring 540b may be formed only in the area facing the gas channel (GP).

[0082] In the above example, the through-holes 541a, 541b formed in the baffle rings 540a, 540b are aligned horizontally, but this is not limiting. For example, as shown in Figures 7 and 8, the through-holes 541c, 541d formed in the baffle rings 540c, 540d are formed in areas facing the gas channels (GP), but they may also be formed in a direction inclined relative to the horizontal when viewed from the front cross section.

[0083] In the above example, the chuck 310 is moved in the vertical direction and the positions of the dielectric plate 520 and the upper edge electrode 620 are fixed, but this is not limiting. For example, the position of the chuck 310 may be fixed and the dielectric plate 520 may be configured to be movable in the vertical direction. Alternatively, both the chuck 310 and the dielectric plate 520 may be configured to be movable in the vertical direction.

[0084] In addition, although the upper edge electrode 620 and the lower edge electrode 350 are grounded in the above example, the present invention is not limited thereto. For example, the upper edge electrode 620 and / or the lower edge electrode 350 may be connected to an RF power source.

[0085] The substrate processing apparatus described above may generate plasma (P) using an ICP (Inductive Coupled Plasma) method. Alternatively, the substrate processing apparatus may generate plasma (P) using a CCP (Capacitor Couple Plasma) method. Alternatively, the substrate processing apparatus may generate plasma (P) using both the ICP (Inductive Coupled Plasma) method and the CCP (Capacitor Couple Plasma) method, or using a method selected from the ICP (Inductive Coupled Plasma) method and the CCP (Capacitor Couple Plasma) method. Alternatively, the substrate processing apparatus may generate plasma (P) using a remote plasma method.

[0086] The above detailed description exemplifies the present invention. Furthermore, the above description illustrates preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the inventive concept disclosed herein, within the scope of equivalents to the disclosed disclosure, and / or within the scope of the skill or knowledge of the art. The above-described embodiments illustrate the best mode for embodying the technical ideas of the present invention, and various modifications are possible as required for specific application fields and uses of the present invention. Therefore, the above detailed description of the invention is not intended to limit the present invention to the disclosed embodiments. Furthermore, the appended claims should be construed to include other embodiments.

Claims

1. In an apparatus for processing a substrate, a housing having an interior space; a lower electrode unit that supports a substrate in the internal space; an upper electrode unit facing the lower electrode unit; and a gas supply unit for supplying a process gas into the internal space; The upper electrode unit is a dielectric plate facing the upper surface of the substrate supported by the lower electrode unit; a support body supporting the dielectric plate, the support body and the dielectric plate being combined with each other to form a buffer space, and the gas supply unit supplying the process gas to the internal space through the buffer space; and a baffle ring disposed on a flow path of the process gas flowing from the buffer space to the internal space; The baffle ring is The substrate processing apparatus is made of porous ceramics having a plurality of through holes through which the process gas can flow.

2. An apparatus for processing a substrate, comprising: a housing having an interior space; a lower electrode unit that supports a substrate in the internal space; an upper electrode unit facing the lower electrode unit; and a gas supply unit for supplying a process gas into the internal space; The upper electrode unit is a dielectric plate facing the upper surface of the substrate supported by the lower electrode unit; a support body supporting the dielectric plate, the support body and the dielectric plate being combined with each other to form a buffer space, and the gas supply unit supplying the process gas to the internal space through the buffer space; and a baffle ring disposed on a flow path of the process gas flowing from the buffer space to the internal space; a space between the support body and the dielectric plate is defined as a gas channel through which the process gas flows, the gas channel being fluidly connected to the buffer space and the inner space and being disposed between the buffer space and the inner space in a flow path of the process gas; a distance between the support body and the dielectric plate in the gas channel is smaller than a distance between the support body and the dielectric plate in the buffer space; The baffle ring is disposed in the buffer space.

3. The baffle ring is The substrate processing apparatus of claim 2 , wherein the substrate processing apparatus is provided with a porous material to allow the process gas to flow.

4. The baffle ring is 4. The substrate processing apparatus of claim 3, wherein the substrate processing apparatus is made of porous ceramics having a plurality of through holes through which the process gas can flow.

5. An apparatus for processing a substrate, comprising: a housing having an interior space; a lower electrode unit that supports a substrate in the internal space; an upper electrode unit facing the lower electrode unit; and a gas supply unit for supplying a process gas into the internal space; The upper electrode unit is a dielectric plate facing the upper surface of the substrate supported by the lower electrode unit; a support body supporting the dielectric plate, the support body and the dielectric plate being combined with each other to form a buffer space, and the gas supply unit supplying the process gas to the internal space through the buffer space; and a baffle ring disposed on a flow path of the process gas flowing from the buffer space to the internal space; The baffle ring is The process gas is provided in a perforated plate having through-holes formed therein, The through hole is A substrate processing apparatus that is formed in an inclined direction when viewed from the front cross section.

6. The baffle ring is The substrate processing apparatus of claim 5 , which is made of a material including metal.

7. The upper electrode unit is 3. The substrate processing apparatus of claim 2, further comprising an upper edge electrode supported by the support body and surrounding the dielectric plate when viewed from above.

8. The diameter of the inner periphery of the upper edge electrode as viewed from above is The substrate processing apparatus according to claim 7 , wherein the outer diameter is larger than the outer diameter of the dielectric plate.

9. 10. The substrate processing apparatus of claim 8, wherein a space between the upper edge electrode and the dielectric plate is defined by a gas outlet that discharges the gas flowing in the gas channel to an edge region of the substrate supported by the lower electrode unit, the gas outlet being fluidly connected to the gas channel and the internal space.

10. The lower electrode unit is a chuck for supporting the substrate; an insulating ring configured to surround the chuck when viewed from above; and 10. The substrate processing apparatus of claim 7, further comprising a lower edge electrode configured to surround the insulating ring when viewed from above.

11. The lower electrode unit is The substrate processing apparatus of claim 10 , further comprising a power supply member for applying RF power at the chuck.

12. The gas supply unit comprises: a gas supply source for supplying the process gas, which is a mixture of a plurality of different gases; and 10. The substrate processing apparatus of claim 1, further comprising a gas supply line for supplying the process gas to the buffer space.

13. The gas supply source O ２ , N ２ , Ar, S.F. ６ , CF ４ The substrate processing apparatus of claim 12 , configured to supply the process gases including at least two of the following:

14. In an upper electrode unit of a bevel etching apparatus for processing an edge region of a substrate, a dielectric plate facing the substrate; a support body supporting the dielectric plate, the support body and the dielectric plate defining a buffer space into which a process gas containing at least two different types of gases is supplied; and a baffle ring disposed on a flow path of the process gas flowing from the buffer space toward an edge region of the substrate; The baffle ring is The process gas is provided in a perforated plate having through holes formed therein, The through hole is The upper electrode unit is formed at an angle when viewed from the front cross section.

15. An upper electrode unit of a bevel etching apparatus for processing an edge region of a substrate, comprising: a dielectric plate facing the substrate; a support body supporting the dielectric plate, the support body and the dielectric plate defining a buffer space into which a process gas containing at least two different types of gases is supplied; and a baffle ring disposed on a flow path of the process gas flowing from the buffer space toward an edge region of the substrate; a space between the support body and the dielectric plate is defined as a gas channel through which the process gas flows, the gas channel being fluidly connected to the buffer space and the inner space and being disposed between the buffer space and the inner space in a flow path of the process gas; a distance between the support body and the dielectric plate in the gas channel is smaller than a distance between the support body and the dielectric plate in the buffer space; The baffle ring is disposed in the buffer space.

16. An upper electrode unit of a bevel etching apparatus for processing an edge region of a substrate, comprising: a dielectric plate facing the substrate; a support body supporting the dielectric plate, the support body and the dielectric plate defining a buffer space into which a process gas containing at least two different types of gases is supplied; and a baffle ring disposed on a flow path of the process gas flowing from the buffer space toward an edge region of the substrate; The baffle ring is The upper electrode unit is made of porous ceramics having a plurality of through holes through which the process gas can flow.

17. The baffle ring is 16. The upper electrode unit according to claim 15, wherein the upper electrode unit is provided by a perforated plate having through holes formed therein through which the process gas can flow.

18. The through hole is The upper electrode unit according to claim 17 , which is formed in an inclined direction when viewed from the front cross section.

19. The upper electrode unit is The upper electrode unit according to claim 15 , further comprising an upper edge electrode supported on an edge region of the support body when viewed from above and configured to surround the dielectric plate.

20. When viewed from above, the upper edge electrode and the dielectric plate are spaced apart from each other, 20. The upper electrode unit of claim 19, wherein a space between the upper edge electrode and the dielectric plate is defined by a gas outlet that discharges the process gas flowing through the gas channel to an edge region of the substrate.

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