Sealing surfaces of components used in plasma etching tools using atomic layer deposition

Abstract

Various machined components used in plasma etch chambers are sealed using atomic layer deposition (ALD) coatings. By sealing the components with ALD layers, surface corrosion / etching caused by repeated exposure to plasma during workpiece fabrication is eliminated or significantly reduced. As a result, unwanted particle generation caused by corrosion is eliminated or significantly reduced, preventing contamination within the plasma etch chamber.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to U.S. Patent Application No. 63 / 042,913, filed June 23, 2020, which is incorporated by reference herein in its entirety for all purposes.

[0002] The present disclosure relates to fabricating components used in plasma etching tools, and more particularly to using atomic layer deposition (ALD) coatings to seal machined components and prevent or at least mitigate surface corrosion caused by repeated exposure to plasma during workpiece fabrication. [Background technology]

[0003] The background discussion provided herein is intended to generally present the context of the present disclosure. Nothing discussed in this "Background" section, and potentially any aspect of the written description, is expressly or implicitly admitted as prior art with respect to this application.

[0004] Plasma etching tools are well known for etching various types of workpieces, such as semiconductor wafers and flat panel displays. With a plasma etching tool, a reactive gas, such as oxygen or fluorine, is introduced into a processing chamber containing the workpiece. When radio frequency (RF) energy is applied, a plasma is generated. Ions or other reactants in the plasma bombard the surface of the workpiece, dislodging or etching away material. The resulting volatiles are then removed from the chamber by a vacuum system.

[0005] One problem with plasma etch tools is that the surfaces of components within the chamber are repeatedly exposed to the plasma during etching of the workpiece. As a result, these surfaces are prone to corrosion, contaminating the process chamber and potentially generating particles that deposit on the workpiece, often causing process defects and reducing yield.

[0006] Therefore, there is a need for a method for reducing surface erosion of components within a plasma etch chamber that eliminates or at least reduces the generation of contaminant particles. Summary of the Invention

[0007] This application is directed to atomic layer deposition (ALD) coatings deposited on the surfaces of components used in plasma etch chambers. The ALD coatings act to seal surface defects susceptible to particle generation, such as cracks, loose or semi-loose debris, resulting from machining and / or repeated use of the components. By sealing the surface defects, generation of undesirable particles and other contaminants within the plasma etch chamber is eliminated or reduced. Thus, the ALD coatings essentially act as a "glue" layer, holding together surfaces that would otherwise be susceptible to damage and particle generation.

[0008] In a non-exclusive embodiment, the present application is directed to a gas distribution component for use in a plasma etch chamber. The gas distribution component includes one or more gas conduits machined into the gas distribution component and an atomic layer deposition (ALD) coating formed on at least some portions of the interior walls of the one or more gas conduits. The ALD coating acts to seal surface defects, such as cracks, loose or semi-loose debris, that occur as a result of machining and / or repeated use. With the ALD coating, the surface defects are substantially sealed by a "glue" layer that eliminates or mitigates the generation of undesirable particles and other contaminants in the plasma etch chamber caused by surface corrosion.

[0009] In various alternative embodiments, the gas distribution components are fabricated from one of silicon, aluminum oxide (Al2O3, sometimes called alumina), or yttrium oxide (YO3) containing ceramics, non-oxide ceramics, other materials containing yttrium, silicon carbide, or aluminum, or any other suitable material. The ALD coating is selected from the group including aluminum oxide, yttrium, yttrium aluminum oxide, yttrium oxide, silicon, or other silicon-based coatings including silicon oxide (SiO2), or any other material suitable for use in a plasma etch chamber.

[0010] In one, not entirely exclusive, embodiment, the gas distribution components are fabricated from silicon and the ALD coating is also silicon.

[0011] In other embodiments, the ALD coating deposited on the interior wall of one or more gas conduits is non-uniform in thickness, ranging from 20 to 500 nanometers in thickness, generally thicker at the gas outlet of one or more gas conduits and tapering along the length of each conduit. In other embodiments, the ALD layer is of substantially uniform thickness.

[0012] In other embodiments, the gas conduit(s) are machined by drilling into the gas distribution component using electrical discharge machining (EDM). In alternative embodiments, the gas conduit(s) may have a diameter of approximately 500 microns, in the range of 400-600 microns, less than 600 microns, or greater than 400 microns. The gas conduit(s) may have an aspect ratio of approximately 30:1, in the range of 20:1-40:1, greater than 20:1, or less than 40:1.

[0013] In other non-exclusive embodiments, the gas distribution component is a showerhead for use in a capacitively coupled plasma (CCP) or a gas distribution nozzle for use in an inductively coupled plasma (ICP) type plasma chamber.

[0014] Other non-exclusive embodiments are directed to a component made of silicon for use in a plasma etch chamber. The component includes an atomic layer deposition (ALD) coating deposited on at least a portion of the component, the ALD coating eliminating or mitigating corrosion of at least a portion of the component covered by the ALD coating when exposed to the environment in the plasma etch chamber. In various embodiments, the ALD coating has a thickness ranging from 20 to 500 nanometers. In one non-exclusive embodiment, the component is a machined silicon ring intended to surround the edge periphery of a semiconductor wafer and conform to the feature profile on the wafer edge. In another non-exclusive embodiment, the component is a showerhead electrode or gas distribution nozzle for supplying gases to a CCP or ICP type etch chamber, respectively. In other embodiments, the component can be any component used in a plasma processing chamber.

[0015] Another non-exclusive embodiment is directed to a method for fabricating a component for use in a plasma etch chamber. The method includes fabricating the component from a material, mechanically drilling one or more holes in the component material, wet-etching the interior surfaces of the one or more holes drilled in the component material, and depositing an ALD coating at least partially on the interior surfaces of the one or more holes drilled in the component material using an atomic layer deposition process, wherein the ALD coating seals surface defects on the interior surfaces resulting from the drilling of the one or more holes. In various alternatives, the ALD coating deposited using the ALD process has a thickness in the range of 20 to 500 nanometers. In one embodiment, the component is a showerhead electrode for use in a CCP etch chamber, and machined holes are provided for supplying gases into the CCP chamber. In another embodiment, the component is a gas nozzle for supplying gases into an inductively coupled plasma (ICP) etch chamber. In either case, the ALD coating prevents or reduces particle generation caused by corrosion when the component is exposed to plasma. In various embodiments, the material from which the component is fabricated is silicon, ceramics containing aluminum oxide (Al2O3) or yttrium oxide (YO3), non-oxide ceramics, silicon carbide, or aluminum. The ALD coating is selected from the group including aluminum oxide, yttrium, yttrium aluminum oxide, yttrium oxide, silicon, or other silicon-based coatings including silicon oxide (SiO2).

[0016] The present application and its advantages may best be understood by referring to the following description read in conjunction with the accompanying drawings. [Brief explanation of the drawings]

[0017] [Figure 1] FIG. 1 is a block diagram of a capacitively coupled plasma (CCP) etching tool, according to a non-exclusive embodiment.

[0018] [Figure 2] FIG. 1 illustrates a gas distribution surface of a showerhead electrode used in a CCP etching tool, according to a non-exclusive embodiment.

[0019] [Figure 3] 1A-1C are cross-sectional views of several exemplary gas distribution conduits of a showerhead electrode, according to non-exclusive embodiments.

[0020] [Figure 4] FIG. 1 is a cross-sectional block diagram of an inductively coupled plasma (ICP) etching tool, according to a non-exclusive embodiment.

[0021] [Figure 5] FIG. 10 is a cross-sectional view of a nozzle used in an ICP etching tool, according to another non-exclusive embodiment.

[0022] [Figure 6] 1 is a cross-sectional view of a pedestal for supporting a workpiece in a processing chamber of a CCP or ICP etching tool, according to an embodiment.

[0023] [Figure 7A] 1A-1C illustrate a coupling ring having an ALD coating for use with a CCP or ICP etching tool, according to an embodiment. [Figure 7B] 1A-1C illustrate a coupling ring having an ALD coating for use with a CCP or ICP etching tool, according to an embodiment.

[0024] [Figure 8] FIG. 1 is a flow diagram illustrating fabrication steps for fabricating a component for use in a CCP or ICP etching tool, according to an embodiment.

[0025] [Figure 9] FIG. 1 is a flow diagram of an ALD process used to coat components used in a CCP or ICP etching tool, according to an embodiment.

[0026] [Figure 10] 1 is a schematic cross-sectional view of another semiconductor processing system using another embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0027] In the drawings, like numerals are sometimes used to designate like structural elements, and it should be understood that the depictions in the figures are diagrammatic and not necessarily to scale.

[0028] The present application will now be described in detail with reference to non-exclusive embodiments thereof as illustrated in the accompanying drawings. In the following description, numerous specific details are disclosed to provide a thorough understanding of the present disclosure. However, it will be apparent to those skilled in the art that the present disclosure may be practiced without some or all of these specific details. In other instances, well-known process steps and / or structures have not been described in detail so as not to unnecessarily obscure the present disclosure.

[0029] Capacitively Coupled Plasma Tools 1, there is shown a block diagram of a capacitively coupled plasma (CCP) etching tool 10. The CCP tool 10 includes a chamber 12, a showerhead electrode 14 for distributing gases within the chamber 12, an electrostatic chuck (ESC) 16 for securing a workpiece 18, and a radio frequency (RF) power source 20 coupled to the showerhead electrode 14.

[0030] The showerhead electrode 14 includes a component body 14A, a gas supply plenum 22, and a gas distribution surface 24 that faces the workpiece 18 within the chamber 12. The gas distribution surface 24 includes a plurality of gas conduits 26 machined into the component body 14A of the showerhead electrode 14, which define gas outlets on the gas distribution surface 24. In a non-exclusive embodiment, the component body 14A of the showerhead electrode 14 is fabricated from silicon, and the holes defined by the gas conduits 26 have diameters of approximately 500 microns and are machined into the showerhead electrode 14 using electrical discharge machining, often referred to as “EDM.” While EDM is a precision machining method, surface defects such as cracks, waffling, undercuts, or protrusions may still occur in the interior sidewalls of the gas conduits 26. To help improve these surface defects, wet or chemical etching can optionally be performed to help reduce the degree of cracking, waffling, undercuts, and / or protrusions of the material on the interior sidewalls of the gas conduits 26.

[0031] It should be understood that the component body 14A of the showerhead electrode 14 can be fabricated from a wide variety of different materials and is not limited to silicon. For example, the showerhead electrode 14 can be fabricated from (a) silicon, (b) non-oxide ceramic, (c) oxide, (d) ceramic, (e) silicon carbide, (f) aluminum oxide, (g) aluminum, or almost any other material suitable for operation in a plasma environment. Furthermore, the diameter of the holes defined by the gas conduits 26 can vary widely. Diameters can range from 400 to 600 microns, or be less than 400 microns or greater than 600 microns. As a general rule, diameters can vary based on factors such as desired gas flow rates, gas types, and other factors. The gas conduits 26 can also be machined in various ways other than EDM, such as using additive manufacturing (sometimes referred to as "3D printing"), mechanical drilling, milling, computer numerical control (CNC) machining, and others.

[0032] During operation, one or more gases are supplied to the showerhead electrode 14 through a gas supply plenum 22. Within the component body 14A of the showerhead electrode 14, the one or more gases are distributed through an internal gas distribution network (not shown) and through gas conduits 26 above the workpiece 18. When energy from an RF power source 20 is applied to the showerhead electrode 14, a plasma 28 is generated within the chamber 12. The plasma 28 is referred to as a "capacitively coupled plasma" (CCP) because it is spaced between two electrodes: the showerhead electrode 14 and the ESC 16, which is coupled to ground. With the plasma 28 present within the chamber 12, ions or other radicals bombard the surface of the workpiece 18, removing or etching away exposed layers of material. The resulting volatiles are then removed from the chamber 12 by a vacuum system (not shown).

[0033] Referring to FIG. 2, the gas distribution surface 24 of the component body 14A of the showerhead electrode 14 is shown. In this particular embodiment, the holes defined by the gas conduits 26 on the gas distribution surface 24 of the component body 14 are arranged in concentric circles. In this manner, gas supplied into the chamber 12 is widely and evenly distributed over the workpiece 18. It should be understood that the particular pattern shown is merely exemplary and should not be construed as limiting in any way. In contrast, the gas conduits 26 may be arranged in any pattern, such as rows or columns, various spirals, or other geometric or non-geometric patterns.

[0034] Gas conduits 26 typically have a large aspect ratio, meaning that their length is significantly greater than their diameter. In various embodiments, gas conduits 26 may have an aspect ratio of approximately 30:1, in the range of 20:1 to 40:1, greater than 20:1, or less than 40:1. Again, the specific aspect ratios listed herein are merely exemplary, and gas conduits 26 may have any aspect ratio.

[0035] The inventors have found that the inner walls of the gas conduits 26 are prone to corrosion and undesirable particle generation caused by repeated and / or prolonged exposure to the plasma 28 during processing of the workpiece 18. As previously mentioned, machining the gas conduits 26 typically results in surface defects, including material cracks, waffling, undercuts, and / or protrusions. As these surfaces are repeatedly exposed to the plasma 28, the defects are prone to material damage, resulting in particle spalling and contamination of the chamber 12. To eliminate or at least mitigate this problem, the inventors propose sealing at least some portions of the showerhead electrode 14, including at least some portions of the inner walls of the gas conduits 26, using atomic layer deposition ("ALD") coatings. For example, by at least partially ALD coating the machined surfaces of the inner walls of the gas conduits 26, surface cracks, waffling, and undercuts and overcuts are effectively sealed. As a result, the inner walls or surfaces of the gas conduits 26 are significantly less prone to material damage due to exposure to the plasma 28. Thus, particle generation and contamination are eliminated or at least reduced, significantly improving workpiece yield.

[0036] Referring to FIG. 3 , a cross-sectional view of several representative gas conduits 26 having an ALD coating 32 is shown. To form the ALD coating 32, the component body 14A of the showerhead electrode 14 is placed in an ALD processing tool and subjected to multiple ALD cycles. During the ALD cycles, precursors migrate up into the individual gas conduits 26, and particles deposit on the sidewalls, forming the ALD coating 32. The number of ALD cycles generally depends on the desired thickness of the ALD coating 32.

[0037] During an ALD cycle, the extent of precursor movement along the length of the gas conduit 26 tends to be less than near the gas outlet of the gas conduit 26. As a result, the ALD coating 32 tends to deposit thicker near the gas outlet of the gas conduit 26, but gradually thins along the length of the gas conduit 26. The resulting ALD coating 32 can therefore be non-uniform. Because the gas outlet of the gas conduit 26 receives the most exposure to the plasma 28, these areas are most prone to erosion. Therefore, it is beneficial to have a thicker ALD coating 32 in this region. In other embodiments, the ALD coating can be deposited during the ALD process so that it is more uniform. This is generally achieved by extending the individual half-cycles of each ALD cycle slightly longer to allow more precursor to move along the length of the conduit. As a result, the ALD coating 32 is more uniform in thickness.

[0038] The thickness of the ALD coating 32 can vary widely. In specific, non-exclusive embodiments, the thickness can be 100, 150, or 200 nanometers. The thicknesses listed above are merely exemplary, and other thicknesses can be used. For example, the ALD coating 32 can range in thickness from 20 to 500 nanometers. The desired thickness of the deposited ALD coating 32 for a given showerhead electrode 14 can vary based on factors such as lifetime (e.g., thicker = longer lifetime), the diameter of the holes defined by the gas conduits 26, the ALD processing time required to deposit the ALD coating 32 to the desired thickness, and so forth.

[0039] The material of the ALD coating 32 deposited during the ALD process can also vary. Exemplary materials include, but are not limited to, aluminum oxide, yttrium, yttrium aluminum oxide, yttrium oxide, silicon, spinel, or other silicon-based coatings, including silicon oxide (SiO), or any other material suitable for use in a plasma etch chamber. As used herein and in the claims, spinel is a crystalline material comprising magnesium aluminum oxynitride. Thus, the ALD coating 32 can be the same as or different from the materials (a) through (g) used to fabricate the showerhead electrode 14.

[0040] In one particular, but by no means exclusive, embodiment, the showerhead electrode 14 and the ALD coating 32 are both silicon. The use of the same material includes the benefit of at least partially filling and sealing surface defects with the same underlying material used to fabricate the showerhead electrode 14. Also, similar materials tend to have similar coefficients of thermal expansion and similar characteristics as seen by the plasma 28 in the chamber 12.

[0041] inductively coupled plasma tools Referring to Figure 4, a block diagram of an inductively coupled plasma (ICP) etching tool 40 is shown. The ICP etching tool 40 includes a chamber 42, a pedestal 44 for supporting a workpiece 46 within the chamber 42, one or more gas nozzles 48 (for simplicity, only one gas nozzle is shown) for introducing gas into the chamber 42, an induction coil 50, and an RF power source 52. As is well known in the art, the RF power source 52 provides a time-varying current through the induction coil 50, generating a plasma 54 from the resulting magnetic field. Because the plasma is inductively generated, the ICP etching tool 40 is often referred to as an ICP tool.

[0042] The one or more gas nozzles 48 each include a component body 48A, which can be made from a wide variety of materials. In various embodiments, the gas nozzles 48 can be fabricated from the same materials (a) through (g) listed above, or from virtually any other material suitable for operation in a plasma environment. The gas nozzles 48 can also include one or more gas conduits (not shown) used to deliver one or more gases into the chamber 42, as described in more detail below. These gas conduits can similarly be fabricated using various machining or drilling techniques, such as EDM, milling, or CNC machining. Regardless of how they are fabricated, the inner walls of the gas conduits tend to have surface defects, including cracks, waffling, material protrusions, undercuts, and the like, and are therefore susceptible to corrosion and particle generation. Because the gas conduits are susceptible to corrosion, an ALD coating that at least partially seals their inner walls is also beneficial in this embodiment.

[0043] 5, a cross-sectional view of a component body 48A of gas nozzle 48 is shown. The component body 38A may be made from materials (a) through (g) listed above or other suitable materials, and includes one or more gas conduits 58 fabricated or otherwise machined into the body 48A using any of the techniques listed above, including EDM, milling, CNC machining, drilling, etc. As shown, some of the gas conduits 58 are positioned to inject gas directly into the chamber 42, while other gas conduits 58 are positioned to direct gas into the chamber at an angle.

[0044] To prevent or at least mitigate corrosion and particle generation, an ALD coating 60 is deposited over at least some portions of the interior wall of the gas nozzle 48. As previously mentioned, the ALD coating 60 on the interior wall can be of non-uniform thickness, meaning that it is thicker at the gas outlet and gradually thins along the length of the gas conduit 58. In other embodiments, the ALD coating 60 can be of uniform thickness. In various embodiments, the thickness of the ALD coating 60 can vary widely, from 20 to 500 nanometers. Again, by providing the ALD coating 60 at the gas outlet of the gas conduit 58, the surface area most susceptible to corrosion and particle generation is sealed. As a result, the generation of unwanted particles and other contaminants is significantly reduced or entirely eliminated.

[0045] ALD coating 60 can be made from a variety of materials. Exemplary materials include, but are not limited to, aluminum oxide, yttrium, yttrium aluminum oxide, yttrium oxide, silicon, or other silicon-based coatings, including silicon oxide (SiO), or any other material suitable for use in a plasma etch chamber.

[0046] In the above-described embodiments, the use of ALD coatings to seal the surfaces of two different types of gas distribution components has been described. However, it should be understood that the scope of the present disclosure contemplated herein is in no way limited to only gas distribution components. In contrast, the present disclosure contemplates that ALD coatings and the like can be deposited on almost any type of component within an etch chamber. Such other components may include non-gas distribution holes, such as those used to house sensors of any kind, or simply any machined surface, whether flat, contoured, curved, non-uniform, or of other shape. In either case, the ALD coating can be used to eliminate or mitigate surface erosion and particle generation when exposed to plasma or other radicals within the etch chamber.

[0047] Other components 6, a cross-sectional view of a pedestal 70 for supporting a workpiece 72 in an etching chamber (not shown) of a CCP or ICP etching tool is shown. The pedestal 70 includes a body 74 and defines a clamping surface 76 for securing the workpiece 72 in place. In various embodiments, the pedestal 70 may secure the workpiece 72 to the surface 76 in such manners as electrostatically, as in an ESC-type chuck, mechanically, by vacuum, or any combination thereof.

[0048] The pedestal 70 may also include one or more edge rings 78, 80 that surround the periphery of the workpiece 72. Such rings 78, 80 may perform different functions. For example, the top ring 78 may help mechanically secure or otherwise position the workpiece 72 in place. The ring 80 may be used as a power delivery electrode within the processing chamber.

[0049] In various embodiments, rings 78, 80 are machined from any of the materials listed above used to fabricate components, such as materials (a) through (g) listed above, or almost any other material suitable for operation in a plasma environment. Also, rings 78, 80 may be fabricated using any of the techniques listed above, such as EDM, milling, CNC machining, drilling, etc. Because such rings are typically machined, surface imperfections such as those noted above are typically present.

[0050] Because ring 80 is positioned below upper ring 78, it is typically not in the direct line of sight of the plasma in the processing tool in which pedestal 70 is used. Nevertheless, ring 80 may still be exposed to radicals during substrate processing. As a result, the machined surface of ring 80 may experience corrosion and generate undesired particles. Therefore, ALD coatings may also be advantageously used on ring 80 to prevent or mitigate undesired particle generation.

[0051] 7A and 7B, an ALD coating 82 is provided on ring 80. In an alternative embodiment, ALD coating 82 is provided on the entire outer surface of ring 80, or at least some portion thereof. Similarly, ALD coating 82 can be made from any of the materials listed above, including, but not limited to, aluminum oxide, yttrium, yttrium aluminum oxide, yttrium oxide, silicon, or other silicon-based coatings, including silicon oxide (SiO), or any other material suitable for use in a plasma etch chamber. ALD coating 82 can also have any thickness within a range from 20 to 500 nanometers. By depositing ALD coating 82, the machined surface of ring 80 is effectively sealed, preventing or mitigating particle generation caused by corrosion and surface damage.

[0052] Although not detailed, the top ring 78 may also be sealed with a similar ALD coating.

[0053] Each of the rings 78, 80 is a component used in a plasma chamber, such as a CCP or ICP tool, as described herein. It should be noted that the specific components described herein should not be construed as limiting in any way. In contrast, some portion of the body of any component used in an etch chamber, whether or not in the direct line of sight of the plasma, can be sealed using an ALD coating as described herein. As a result, unwanted particle generation and generation of other contaminants can be significantly reduced.

[0054] Component manufacturing process flow 8 , a flow diagram 90 illustrating fabrication steps for ALD coating the body of a component for use in a CCP or ICP type etch tool is shown. The fabricated part can be any component used in a plasma etch chamber, including, but not limited to, the showerhead electrode 14, gas nozzle 48, rings 78, 80, or any other component in a plasma etch chamber. Because many components used in such chambers are machined, an ALD coating process such as that described herein can be used to remove or reduce particle generation caused by corrosion.

[0055] In a first step 92, the body of the component is fabricated. As previously mentioned, a given component may be fabricated from a variety of materials, such as silicon, ceramic, non-oxide ceramic, oxide, ceramic, silicon carbide, aluminum oxide, aluminum, or almost any other material suitable for operation in a plasma environment. Also, a variety of fabrication techniques may be used, including EDM, CNC machining, molding, milling, drilling, etc.

[0056] At optional step 94, depending on the nature of the component, the body of the component may be machined for a number of reasons. In the case of the showerhead electrode 14 and gas nozzle 48, the gas conduits 26, 58 are drilled using EDM as described herein. Other types of component holes, recesses, or other features may be machined using EDM, milling, drilling, etc. For example, a component may have holes or recesses drilled to accommodate other components, sensors, to accept fastening elements such as screws or bolts. In other embodiments, the body of the component, including any holes or recesses formed therein, may be fabricated using additive manufacturing (e.g., 3D printing).

[0057] In optional step 96, the surface of the component may be subjected to a wet or chemical etch. As previously mentioned, wet etching tends to improve surface defects, reducing some of the cracking, waffling, undercutting, and overcutting of the material.

[0058] In step 98, at least some portion or all of the component body is sealed with an ALD coating. This step involves placing the component body in a processing chamber of an ALD tool and performing multiple ALD cycles until the ALD coating reaches a desired thickness. The ALD coating can be made from any of the materials listed above, including, but not limited to, aluminum oxide, yttrium, yttrium aluminum oxide, yttrium oxide, silicon, or other silicon-based coatings, including silicon oxide (SiO), or any other material suitable for use in a plasma etch chamber.

[0059] Finally, in step 100, the coated component is mounted in a plasma etching tool.

[0060] ALD process flow Referring to FIG. 9, a flow diagram of the ALD process performed in step 88 of FIG. 8 as described above is shown.

[0061] In a first step 102, a component is placed in a processing chamber of an ALD tool.

[0062] Steps 104 and 106 perform the first half of an ALD cycle. The first half cycle involves introducing a first precursor and / or reactant into the process chamber, generating a plasma, and depositing a first layer of particles on the surface of the component. After that, the process chamber is then purged.

[0063] Steps 108 and 110 perform the second half of the ALD cycle, which involves introducing a second precursor and / or reactant into the process chamber, striking a plasma, and depositing a second layer of particles on the surface of the component, after which the process chamber is purged.

[0064] The first and second ALD steps as described herein rely on plasma. However, it should be noted that this is by no means a requirement. In other embodiments, the first and / or second ALD steps can be plasma-free. Additionally, any other deposition process can be used, such as, for example, chemical vapor deposition (CVD), physical vapor deposition, or any other process capable of depositing thin films.

[0065] In decision step 112, it is determined whether the ALD coating resulting from the deposition of the first and second layers of particles has reached a desired thickness. If not, steps 104-110 are repeated. If so, the above process is complete.

[0066] As previously mentioned, ALD coatings can be made from a wide variety of different materials, including, but not limited to, aluminum oxide, yttrium, yttrium aluminum oxide, yttrium oxide, silicon, or other silicon-based coatings, including silicon oxide (SiO), or any other material suitable for preventing or mitigating corrosion in a plasma etch chamber. Different precursors and / or reactants are typically used for each of the various material choices. When depositing an ALD layer of silicon or aluminum oxide, for example, precursors containing silicon (e.g., SiO) or aluminum (e.g., trimethylaluminum (TMA)Al(CH)) and reactants such as water (HO) are used. For the remaining ALD materials, appropriate precursors and / or reactants can be used.

[0067] 10 is a schematic cross-sectional view of another semiconductor processing system 1000. The semiconductor processing system includes a processing chamber (i.e., a substrate processing chamber) 1002. The processing chamber 1002 is shown as an inductively coupled plasma (ICP)-based system, although examples disclosed herein may be applied to other types of substrate processing systems, such as transformer coupled plasma (TCP) or downstream plasma systems.

[0068] The processing chamber 1002 includes a lower chamber region 1004 and an upper chamber region 1006. The lower chamber region 1004 is defined by a chamber sidewall surface 1008, a chamber bottom surface 1010, and the underside of a gas or plasma distribution apparatus, such as a showerhead assembly including a showerhead 1014. For example, the showerhead 1014 may include a faceplate 1016 configured to function as an ion and / or ultraviolet (UV) filter / blocker. Radicals activated within the interior volume of the upper chamber region 1006 bounce / reflect from the surfaces of the upper chamber region 1006 and faceplate 1016 and pass through through-holes 1030 into the lower chamber region 1004 of the processing chamber 1000 to form an etching process on a substrate 1026.

[0069] In some examples, the faceplate 1016 is connected to a reference potential, such as ground (as shown in FIG. 10). In other examples, the faceplate 1016 may be connected to a positive or negative direct current (DC) reference potential.

[0070] The upper chamber region 1006 is defined by the top surface 1012 of the showerhead 1014 and the inner surface of a dome 1018. In some examples, the dome 1018 rests on a first annular support 1020, which optionally includes one or more spaced holes 1022 for delivering process gases (e.g., helium, hydrogen, etc.) to the upper chamber region 1006. In some examples, the process gases are delivered by the one or more spaced holes 1022 upward at an acute angle relative to a plane containing the showerhead 1014, although other angles / directions may be used. Gas passages (not shown) in the first annular support 1020 may be used to supply gases to the one or more spaced holes 1022.

[0071] The depth of the showerhead 1014 (i.e., the amount that the faceplate 1016 extends into the interior volume of the lower chamber 1004) defines the gap between the underside of the faceplate 1016 and the substrate 1026. The gap (i.e., gap width or spacing) is optimized to achieve a desired etch profile. For example, etch uniformity may vary across various processes, processing chambers, etc. Thus, the showerhead 1014 is configured to achieve a desired gap for a particular process and / or processing chamber. For example, the gap may be varied between 1 and 10 inches (e.g., 25 and 76 mm). In one embodiment, the showerhead 1014 may be removed and replaced to adjust the gap.

[0072] A substrate or wafer support 1024 is disposed within the lower chamber region 1004. In some examples, the substrate support 1024 includes an electrostatic chuck (ESC), although other types of substrate supports may be used. A substrate or wafer 1026 is disposed on top of the substrate support 1024 during processing, such as etching. In some examples, the temperature of the substrate 1026 may be controlled by a heating element (or heater plate) 128, an optional cooling plate with fluid flow paths and one or more sensors (not shown), and / or any other suitable substrate support temperature control system.

[0073] One or more induction coils 1040 may be disposed around an outer portion of the dome 1018. When activated, the one or more induction coils 1040 create an electromagnetic field inside the dome 1018. In some examples, an upper coil and a lower coil are used. A gas injector 1042 injects one or more gas mixtures from a gas delivery system 1050. The gas delivery system 1050 includes one or more gas sources 1052, one or more valves 1054, one or more mass flow controllers (MFCs) 1056, and a mixing manifold 1058, although other types of gas delivery systems may be used.

[0074] In some examples, the gas injector 1042 includes a central injection position that directs gas in a downward direction and one or more side injection positions that inject gas at one or more angles relative to the downward direction. In some examples, the gas delivery system 1050 delivers a gas mixture at a first flow rate to the central injection position of the gas injector 1042 and a gas mixture at a second flow rate to the side injection positions. In other examples, different mixtures are delivered by the gas injector 1042. In some examples, the gas delivery system 1050 delivers tuning gas to other positions within the processing chamber.

[0075] A plasma generator 1070 may be used to generate RF power that is output to the one or more inductive coils 1040. Plasma is generated in the upper chamber region. In some examples, the plasma generator 1070 includes an RF generator 1072 and a matching network 1074. The matching network 1074 matches the impedance of the RF generator 1072 to the impedance of the one or more inductive coils 1040. While a single RF source (i.e., RF generator 1072) is shown, in other examples, multiple RF sources may be used to provide two or more different pulsing levels. A valve 1078 and a pump 1080 may be used to control the pressure within the lower and upper chamber regions 1004, 1006 and to evacuate reactants.

[0076] A controller 1076 communicates with the gas delivery system 1050, valves 1078, pumps 1080, and / or plasma generator 1070 to control the process gases, purge gases, RF plasma, and chamber pressure. In some examples, the plasma is maintained inside the dome 1018 by one or more inductive coils 1040. One or more gas mixtures are introduced from the top of the processing chamber 1002 using gas injectors 1042 (and / or holes 1022).

[0077] A showerhead 1014 according to the present disclosure includes one or more features configured to adjust a desired etch profile of an etch performed on a substrate 1026. For example, the showerhead 1014 may include an embedded heater (not shown in FIG. 10 ). A controller 1076 is configured to control the heater to control the temperature of the showerhead 1014 and maintain a desired etch profile. The faceplate 1016 includes holes 1030 arranged to flow plasma from the upper chamber region 1006, through the faceplate 1016, and into the lower chamber region 1004. The arrangement of the holes 1030 according to the present disclosure (e.g., hole diameter, pitch, pattern, etc.) may be optimized to achieve a desired etch profile. For example, the holes 1030 may be omitted / blocked in certain areas of the faceplate 1016. A showerhead 1014 according to the present disclosure may also protrude / extend into the lower chamber region 1004 (i.e., into the interior volume of the processing chamber 1002).

[0078] In an embodiment, the showerhead 1014 may have an aluminum component body with an ALD coating within the yttrium oxide holes 1030. In such an embodiment, the remote plasma showerhead 1014 is the component with the protective ALD coating. In the same or another embodiment, the passages within the gas injector 1042 may have a protective ALD coating.

[0079] It should be understood that the embodiments provided herein are merely exemplary and should not be construed as limiting in any way. Generally, the present application is intended to encompass any showerhead having at least two sets of holes defining two swirl patterns and two plenums for each of the two patterns.

[0080] Although only a few embodiments have been described in detail, it should be understood that the present application can be embodied in many other forms without departing from the spirit and scope of the disclosure provided herein.

[0081] Accordingly, the present embodiments should be considered as illustrative and not restrictive, and should not be limited to the details given herein, but may be modified within the scope and equivalents of the appended claims. [Application Example 1] A component, a component body having one or more holes formed therein; an atomic layer deposition (ALD) coating deposited on at least a portion of an interior surface of each of the one or more holes; A component containing: [Application Example 2] The component according to Application Example 1, wherein the component body is (a) Silicon (b) Non-oxide ceramic (c) Oxide ceramic (d) Silicon carbide (e) Aluminum (f) Aluminum oxide (Al 2 O 3 ),or (g) Yttrium oxide (Y 2 O 3 ) A component made from one of the following: [Application Example 3] The component according to Application Example 1, wherein the ALD coating is (a) Aluminum oxide (b) yttrium aluminum oxide (c) yttrium oxide (d) Silicon (e) silicon oxide, or (f) Spinel A component selected from the group comprising: [Application Example 4] A component according to Application Example 1, wherein the ALD coating eliminates or reduces particle generation caused by corrosion when the component is exposed to plasma. [Application Example 5] A component according to Application Example 1, wherein the component body is made of silicon and the ALD coating is also silicon. [Application Example 6] A component according to Application Example 1, wherein the ALD coating has a thickness in the range of 20 to 500 nanometers. [Application Example 7] A component according to Application Example 1, wherein the component is a gas distribution component for use in a plasma chamber, and the one or more holes formed in the component body are one or more gas conduits. [Application Example 8] The component according to Application Example 7, wherein the ALD coating is (a) thicker at the gas outlet of said one or more gas conduits and gradually thinner along the length of said one or more gas conduits, respectively; or (b) each of said one or more gas conduits has a uniform thickness along the length thereof; A component that is either [Application Example 9] The component according to Application Example 1, wherein the one or more holes are: (a) Electric discharge machining (EDM) (b) Additive Manufacturing (c) Milling (d) Perforation (e) Computer Numerical Control (CNC) machining; or (f) Any combination of (a) through (e) a component formed within said component by one of [Application Example 10] The component according to Application Example 7, wherein the one or more gas conduits are: (a) Approximately 500 microns (b) 400-600 microns range (c) Less than 600 microns; or (d) Over 400 microns A component having one or more diameters. [Application Example 11] The component according to Application Example 7, wherein the one or more gas conduits are: (a) Approximately 30:1 (b) Range of 20:1 to 40:1 (c) greater than 20:1; or (d) Less than 40:1 Component having one or more aspect ratios of [Application Example 12] The component according to Application Example 7, wherein the gas distribution component is a showerhead. [Application Example 13] A component according to Application Example 12, wherein the showerhead also serves as an electrode for supplying radio frequency (RF) energy into a plasma chamber, and the plasma chamber is provided in a capacitively coupled plasma (CCP) etching tool. [Application Example 14] A component according to Application Example 7, wherein the gas distribution component is a gas distribution nozzle and the plasma chamber is provided on an inductively coupled plasma (ICP) etching tool. [Application Example 15] A component according to Application Example 7, wherein each of the one or more gas conduits defines an inner wall that is wet etched prior to depositing the ALD coating. [Example 16] A component for use in a plasma etching chamber, comprising: a component body made from silicon; an atomic layer deposited (ALD) silicon coating deposited on at least a portion of the component body, the ALD silicon coating eliminating or reducing corrosion of at least the portion of the component body covered by the ALD silicon coating when exposed to an environment in the plasma etch chamber. [Application Example 17] A component according to Application Example 16, wherein the ALD silicon coating has a thickness in the range of 20 to 500 nanometers. [Application Example 18] A component according to Application Example 16, wherein the component body is a silicon ring, and the ALD silicon coating is provided to eliminate or reduce particle generation when the silicon ring is exposed to radicals in the plasma etching chamber. [Application Example 19] A component according to Application Example 16, wherein the component body is a silicon ring intended to (a) surround the edge of a semiconductor wafer when placed on a support surface within the plasma etching chamber, and (b) act as a power delivery electrode within the plasma etching chamber. [Application Example 20] A component according to Application Example 16, wherein the component body is a showerhead, and the ALD silicon coating is deposited within a gas outlet of a gas conduit formed within the showerhead. [Application Example 21] A component as described in Application Example 16, wherein the component body is a gas nozzle for supplying gas into an etching chamber of an inductively coupled plasma etching tool, and the ALD silicon coating is deposited within one or more gas outlets of one or more gas conduits fabricated within the gas nozzle. [Example 22] A method of fabricating a component for use in a plasma etching chamber, comprising: fabricating a component body of the component from a material having one or more holes formed in the material of the component body; wet etching an interior surface of the one or more holes formed in the material of the component body; 1. A method comprising depositing, using an ALD process, an atomic layer deposition (ALD) coating, at least in part, on an interior surface of the one or more holes formed in the material of the component body, the ALD coating acting to seal surface defects on the interior surface resulting from formation therein. [Application Example 23] The method described in Application Example 22, wherein depositing the ALD coating further comprises using the ALD process until the ALD coating has a thickness in the range of 20 to 500 nanometers. [Application Example 24] The method described in Application Example 22, wherein the component is a showerhead. [Application Example 25] The method described in Application Example 22, wherein the component is a gas nozzle for supplying gas into an etching chamber of an inductively coupled plasma (ICP) etching tool. [Application Example 26] The method according to Application Example 22, wherein the material from which the component body is made is (a) Silicon (b) Non-oxide ceramic (c) Oxide ceramic (d) Silicon carbide (e) Aluminum (f) Aluminum oxide (Al 2 O 3 ),or (g) Yttrium oxide (Y 2 O 3 ) The method is selected from one of the following: [Application Example 27] The method described in Application Example 22, wherein the materials of the component body and the ALD coating are both silicon. [Application Example 28] The method according to Application Example 22, wherein the ALD coating is (a) Aluminum oxide (b) yttrium aluminum oxide (c) yttrium oxide (d) Silicon (e) silicon oxide, and (f) Spinel A method comprising: [Application Example 29] In the method according to Application Example 22, fabricating the component body of the component having the one or more holes formed in the material further comprises: (a) Electric discharge machining (EDM) (b) Additive Manufacturing (c) Milling (d) Perforation (e) Computer Numerical Control (CNC) machining; or (f) Any combination of (a) to (e) A method comprising one of the manufacturing processes described above. [Application Example 30] A component for use in a plasma etching chamber, the component being made using the method of claim 22. [Application Example 31] The component according to Application Example 30, wherein the component is a shower head. [Application Example 32] A component according to Application Example 30, wherein the component is a gas nozzle for use within an etching chamber of an inductively coupled plasma (ICP) etching tool.

Claims

1. An ion filter showerhead for a plasma processing chamber, the plasma processing chamber having an upper chamber region on a first side of the ion filter showerhead and a lower chamber region on a second side of the ion filter showerhead, the ion filter showerhead filtering ions from a plasma in the upper chamber region toward a substrate in the lower chamber region, the ion filter showerhead comprising: an ion filter showerhead body having one or more holes formed therein for flowing plasma from the upper chamber region to the lower chamber region; an atomic layer deposition (ALD) coating deposited on the interior surface of each of the one or more holes; Includes an ion filter shower head.

2. 2. The ion filter showerhead of claim 1, wherein the ion filter showerhead body comprises: (e) Aluminum An ion filter shower head consisting of:

3. 10. The ion filter showerhead of claim 1, wherein the ALD coating is comprised of a metal oxide.

4. 10. The ion filter showerhead of claim 1, wherein the ALD coating eliminates or reduces particle generation caused by corrosion when the ion filter showerhead is exposed to a plasma.

5. 10. The ion filter showerhead of claim 1, wherein the ALD coating has a thickness in the range of 20 to 500 nanometers.

6. 10. The ion filter showerhead of claim 1, wherein the one or more holes comprise: (a) Electric discharge machining (EDM) (b) Additive Manufacturing (c) Milling (d) Perforation (e) Computer Numerical Control (CNC) machining; or (f) any combination of (a) to (e) ion filter showerhead, wherein the ion filter showerhead is formed in the ion filter showerhead by one of

7. 1. A ring element for use in a plasma etch chamber, comprising: a ring element body made from silicone; an atomic layer deposition (ALD) silicon coating deposited on at least a portion of the ring element body, the ALD silicon coating eliminating or reducing corrosion of at least the portion of the ring element body covered by the ALD silicon coating when exposed to an environment in the plasma etching chamber.

8. 8. The ring element of claim 7, wherein the ALD silicon coating has a thickness in the range of 20 to 500 nanometers.

9. 8. The ring element of claim 7, wherein the ring element body is a silicon ring, and the ALD silicon coating is provided to eliminate or mitigate particle generation when the silicon ring is exposed to radicals in the plasma etching chamber.

10. 8. The ring element of claim 7, wherein the ring element body is a silicon ring intended to (a) surround a semiconductor wafer periphery on an edge thereof when placed on a support surface within the plasma etching chamber, and (b) act as a power delivery electrode within the plasma etching chamber.

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