Gas mixer that enables RPS purging

Abstract

The semiconductor processing system includes a remote plasma source (RPS), a faceplate, and an output manifold disposed between the RPS and the faceplate. The output manifold is characterized by a plurality of purge outlets fluidly coupled to a purge gas source and a plurality of deposition outlets fluidly coupled to a deposition gas source. A supply tube extends between the RPS and the faceplate and fluidly couples the RPS and the faceplate. The supply tube is characterized by a generally cylindrical sidewall defining a plurality of upper apertures arranged in a radial pattern. Each of the upper apertures is fluidly coupled to one of the purge gas outlets. The generally cylindrical sidewall defines a plurality of lower apertures arranged in a radial pattern below the upper apertures. Each of the lower apertures is fluidly coupled to one of the deposition outlets.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of and priority to U.S. Non-Provisional Patent Application No. 17 / 071,618, entitled "GAS MIXER TO ENABLE RPS PURGING," filed October 15, 2020, the entire contents of which are incorporated herein by reference for all purposes.

[0002]

[0002] The present technology relates to components and apparatus for semiconductor manufacturing. More particularly, the present technology relates to distribution components for process chambers and other semiconductor processing equipment. [Background technology]

[0003]

[0003] Integrated circuits are made possible by processes that form layers of materials in complex patterns on substrate surfaces. Producing patterned materials on a substrate requires controlled methods for forming and removing material. Chamber components often deliver process gases to the substrate for film deposition or material removal. To promote symmetry and uniformity, many chamber components may include regular patterns of features, such as apertures, to deliver material in a manner that may enhance uniformity. However, this may limit the ability to tailor recipes on the wafer.

[0004]

[0004] Therefore, there is a need for improved systems and methods that can be used to manufacture high quality devices and structures. These and other needs are addressed by the present technology. Summary of the Invention

[0005] An exemplary semiconductor processing system may include a remote plasma source (RPS). The system may include a faceplate. The system may include an output manifold disposed between the RPS and the faceplate. The output manifold may be characterized by a plurality of purge outlets fluidly coupled to a purge gas source and a plurality of deposition outlets fluidly coupled to a deposition gas source. The system may include a supply tube extending between the RPS and the faceplate and fluidly coupling the RPS and the faceplate. The supply tube may be characterized by a generally cylindrical sidewall defining a plurality of upper apertures arranged in a radial pattern. Each of the plurality of upper apertures may be fluidly coupled to at least one of the plurality of purge outlets. The generally cylindrical sidewall may define a plurality of lower apertures arranged in a radial pattern below the plurality of upper apertures. Each of the plurality of lower apertures may be fluidly coupled to at least one of the plurality of deposition outlets.

[0006]

[0006] In some embodiments, the upper plurality of apertures may be arranged in an upper row and a lower row. The apertures in the lower row may be angled as they move away from the central axis of the supply tube. The apertures in the lower row may be angled by an angle between about 1 degree and 10 degrees as they move away from the central axis. The angular positions of the apertures in the upper row may be offset from the angular positions of the apertures in the lower row. The lower plurality of apertures may be arranged in an upper row and a lower row. The upper plurality of apertures may be arranged at regular intervals around the circumference of the supply tube. The upper plurality of apertures may be offset from the lower plurality of apertures.

[0007] Some embodiments of the present technology may include a semiconductor processing system. The semiconductor processing system may include a remote plasma source (RPS). The semiconductor processing system may include a faceplate. The semiconductor processing system may include a purge gas plenum. The semiconductor processing system may include a supply tube extending between the RPS and the faceplate and fluidly coupling the RPS and the faceplate. The supply tube may be characterized by a central axis and a generally cylindrical sidewall. The generally cylindrical sidewall may define a plurality of apertures arranged in a radial pattern about the central axis. Each of the plurality of apertures may be fluidly coupled to the purge gas plenum. Each of the plurality of apertures may be angled away from the central axis.

[0008] In some embodiments, the plurality of apertures may be regularly spaced around the circumference of the supply tube. At least some of the plurality of apertures may be angled downward toward the face plate. The purge gas plenum may be characterized by an annular body extending around the outer periphery of the supply tube. Each of the plurality of apertures may form a lumen extending from the purge gas plenum to an inner surface of the supply tube. The face plate may be a first face plate. The semiconductor processing system may further include a second face plate. The purge gas plenum may be a first purge gas plenum. The semiconductor system may further include a second purge gas plenum. The supply tube may be a first supply tube. The semiconductor processing system may further include a second supply tube. The second supply conduit may extend between the RPS and the second showerhead and may fluidly couple the RPS and the second showerhead. The second supply conduit may be characterized by a second central axis and a generally cylindrical sidewall. The generally cylindrical sidewall may define a second plurality of apertures arranged in a radial pattern about the second central axis. Each of the second plurality of apertures may be fluidly coupled to a second purge gas plenum. Each of the second plurality of apertures may be angled away from the second central axis. The second plurality of apertures may be angled downward toward the second faceplate.

[0009] Some embodiments of the present technology may include a method for processing a substrate. The method may include flowing a deposition gas from a deposition gas source into a supply tube. To prevent backflow of the deposition gas into a remote plasma system (RPS) located at an upper end of the supply tube, a purge gas may be introduced into the supply tube at a plurality of fluid ports radially arranged around the supply tube. The method may include flowing the deposition gas into a faceplate coupled to a lower end of the supply tube.

[0010] In some embodiments, flowing deposition gas from a deposition gas source into the interior of the supply tube may include flowing deposition gas from a manifold into the interior of the supply tube through a plurality of apertures arranged radially around the supply tube and below a plurality of fluid ports. Flowing deposition gas from a deposition gas source into the interior of the supply tube may include flowing deposition gas from an RPS into the interior of the supply tube. At least some of the plurality of fluid ports may be angled away from a central axis of the supply tube. At least some of the plurality of fluid ports may be angled downward toward the face plate. Introducing purge gas into the interior of the supply tube may include flowing purge gas from a purge gas plenum into the interior of the supply tube through the fluid ports.

[0011] Some embodiments of the present technology may include a semiconductor processing system. The semiconductor processing system may include a remote plasma source (RPS). The semiconductor processing system may include a faceplate. The semiconductor processing system may include an output manifold disposed between the RPS and the faceplate. The output manifold may be characterized by a plurality of deposition outlets fluidly coupled to a deposition gas source. The semiconductor processing system may include a supply tube extending between the RPS and the faceplate and fluidly coupling the RPS and the faceplate. The supply tube may be characterized by a central axis and a generally cylindrical sidewall. The generally cylindrical sidewall may define a plurality of apertures arranged in a radial pattern about the central axis. Each of the plurality of apertures may be fluidly coupled to at least one of the plurality of deposition outlets. The supply tube may include a purge inlet disposed above the plurality of apertures. The purge inlet may be fluidly coupled to a purge gas source. The purge inlet may be formed by an opening at an uppermost portion of the supply tube. The purge gas may be flowed into the supply tube through the RPS. The purge inlet may include a plurality of radially arranged openings on an upper side defined by a generally cylindrical sidewall.

[0012] Such technology may provide numerous advantages over conventional systems and techniques. For example, embodiments of the technology may provide substrate processing equipment that may reduce the occurrence of backflow of deposition gases into the RPS unit. This helps prevent RPS strike faults and on-wafer problems. These and other embodiments, along with their many advantages and features, are described in more detail below and in the accompanying drawings.

[0013]

[0013] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings. [Brief explanation of the drawings]

[0014] [Figure 1]

[0014] A top view of an exemplary processing system according to some embodiments of the present technology is shown. [Figure 2]

[0015] 1 shows a schematic cross-sectional view of an exemplary processing system in accordance with some embodiments of the present technique; [Figure 3]

[0016] 1 shows a schematic partial cross-sectional view of an exemplary semiconductor processing chamber in accordance with some embodiments of the present technique; [Figure 4]

[0017] 1 shows a schematic partial cross-sectional view of a supply tube in accordance with some embodiments of the present technology. [Figure 5]

[0018] 1 shows a schematic cross-sectional view of an exemplary semiconductor processing chamber in accordance with some embodiments of the present technique; [Figure 6]

[0019] 1 shows a schematic partial cross-sectional view of a supply tube in accordance with some embodiments of the present technology. [Figure 7A]

[0020] 1 shows a schematic cross-sectional view of an exemplary supply tube in accordance with some embodiments of the present technology; [Figure 7B]

[0021] 1 shows a schematic cross-sectional view of an exemplary supply tube in accordance with some embodiments of the present technology; [Figure 8]

[0022] 1 shows a schematic partial cross-sectional view of an exemplary semiconductor processing chamber in accordance with some embodiments of the present technique; [Figure 9]

[0023] 1 shows a schematic cross-sectional view of a supply tube in accordance with some embodiments of the present technology. [Figure 10]

[0024] 1 shows a schematic cross-sectional view of a dual chamber semiconductor processing system in accordance with an embodiment of the present technique; [Figure 11]

[0025] 1 is a flowchart of an exemplary method for etching a substrate in accordance with some embodiments of the present technique. DETAILED DESCRIPTION OF THE INVENTION

[0015]

[0026] Some of the drawings are included as schematic diagrams. It should be understood that the drawings are for illustrative purposes and should not be considered to scale unless expressly stated to be to scale. Furthermore, as schematic diagrams, the drawings are provided to aid in understanding and may not include all aspects or information compared to realistic depictions and may include exaggerated material for illustrative purposes.

[0016]

[0027] In the accompanying drawings, similar components and / or features may have the same reference numerals. Furthermore, various components of the same type may be distinguished according to the reference numeral, with a letter distinguishing between the similar components. When only a first reference numeral is used in this specification, the description is applicable to any of the similar components having the same first reference numeral, regardless of the letter.

[0017]

[0028] During plasma-enhanced deposition processes, a remote plasma source (RPS) can be used to generate and strike the plasma. However, in some cases, the RPS may experience intermittent plasma strike failures, which can result in system downtime across multiple manufacturing tools. Such failures can be caused when contaminants enter and contaminate the RPS unit, affecting its ability to successfully strike the plasma. These contaminants may result from deposition gas backflowing into the RPS unit. The deposition gas can change the surface morphology of the RPS unit's interior surfaces, causing failures when attempting to strike plasma within the RPS unit.

[0018]

[0029] These problems cannot be overcome by simply flowing purge gas through the RPS unit and supply piping because this flow is parallel to the deposition gas flow from the gas box and creates turbulence within the processing chamber. This turbulent purge gas flow disrupts the deposition gas flow pattern, causing on-wafer problems such as reduced wafer uniformity and / or wafer stress. Furthermore, the use of mechanical valves does not provide the desired solution because radicals heat up the moving actuators of the mechanical valves, causing malfunction of the mechanical valves.

[0019]

[0030] The present technology overcomes these challenges by utilizing one or more chamber components that may facilitate a positive pressure supply of purge gas at a location near the RPS unit to prevent backflow of deposition gas into the RPS unit. The present technology also provides one or more chamber components that mix purge gas with the deposition gas rather than simply flowing the purge gas downstream from the RPS unit alone. By mixing the purge gas with the deposition gas, any purge gas coming from the RPS unit (or introduced near the RPS unit) enters the processing chamber at the same time as the deposition gas, improving deposition gas uniformity through the processing region.

[0020]

[0031] The present technology utilizes alternative components within the chamber to reduce or eliminate the occurrence of RPS backflow. Eliminating RPS backflow from the chamber may prevent alterations to the internal surfaces of the RPS unit, eliminate RPS strike failures, and achieve improved deposition gas uniformity on the wafer. While the present disclosure routinely identifies specific etching processes utilizing the disclosed technology, it will be readily understood that these systems and methods are equally applicable to deposition and cleaning processes that may occur in the described chamber. Thus, the technology should not be considered limited to use solely with etching processes.

[0021]

[0032] 1 illustrates a top view of one embodiment of a deposition, etch, bake, and cure chamber processing system 100, according to multiple embodiments. In this illustration, a pair of front-opening unified pods (FOUPs) 102 deliver substrates of various sizes that are received by a robot arm 104 and placed in a low-pressure holding area 106 before being placed into one of the substrate processing chambers 108a-f, arranged in tandem sections 109a-c. A second robot arm 110 may be used to transfer substrate wafers from the holding area 106 to and from the substrate processing chambers 108a-f. Each substrate processing chamber 108a-f may be equipped to perform several substrate processing operations, including plasma-enhanced chemical vapor deposition, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, orientation, and the formation of stacks of semiconductor materials as described herein, in addition to other substrate processes, including annealing, ashing, and the like.

[0022]

[0033] The substrate processing chambers 108a-f may include one or more system components for depositing, annealing, curing, and / or etching a dielectric or other film on a substrate. In one configuration, two pairs of processing chambers (e.g., 108c-d and 108e-f) may be used to deposit a dielectric material on a substrate, and a third pair of processing chambers (e.g., 108a-b) may be used to etch the deposited dielectric. In another configuration, all three pairs of chambers, e.g., 108a-f, may be configured to deposit a stack of alternating dielectric films on a substrate. Any one or more of the described processes may be performed in multiple chambers separate from the fabrication system shown in various embodiments. It should be understood that additional configurations of deposition chambers, etch chambers, annealing chambers, and curing chambers for dielectric films are contemplated by system 100.

[0023]

[0034] FIG. 2 shows a schematic cross-sectional view of an exemplary processing system 200 in accordance with an embodiment of the present technique. The system may include a processing chamber 205 and a remote plasma source (“RPS”) unit 210. The RPS unit 210 may be stabilized on a platform 212 having support members 214 that may be coupled to the processing chamber 205 at one or more locations around the processing chamber 205. Utilizing additional support members 214 in conjunction with the platform 212 may properly distribute the weight of the RPS unit 210 and protect components from shear or other stresses associated with the weight of the RPS unit 210. A supply pipe 216 may be coupled between or to the RPS unit 210 and the processing chamber 205 to supply one or more precursors to the processing chamber 205. A flange adapter 218 may be disposed around the supply pipe 216 to provide additional stability and support for the RPS unit 210. Otherwise, the supply pipe 216 may be damaged from the supporting weight. The flange adapter 218 may contact the platform 212 to provide support for the RPS unit 210, thereby further preventing the weight of the RPS unit 210 from compressing the supply tube 216.

[0024]

[0035] The processing chamber 205 may include a gas box 220 that provides access to the processing chamber 205. The gas box 220 may define an access to the processing chamber 205, which in embodiments may be defined in the center of the gas box 220 or may be located within the gas box 220. The supply tube 216 may be disposed within or coupled to the access of the gas box 220, providing a precursor pathway between the RPS unit 210 and the interior of the processing chamber 205. The flange adapter 218 may also contact the top plate 220 to distribute at least a portion of the weight of the RPS unit 210 to prevent or reduce stress on the supply tube 216.

[0025]

[0036] In some embodiments, the spacers 222 may at least partially define an outer or inner wall of the processing chamber 205. A gas distribution assembly 225 may be disposed within the processing chamber 205 near the supply pipe 216 and may enable distribution of precursors or plasma effluents into the processing chamber 205. A pumping liner 230 may be disposed within the processing region of the processing chamber 205. The pumping liner 230 may enable unreacted precursors or plasma effluents to be evacuated from the processing chamber 205. The pumping liner 230 may also enable particles etched in the etching process to be removed from the processing chamber 205 to prevent the particles from remaining on the substrate during subsequent processing operations.

[0026]

[0037] A pedestal 235 may be included within the processing region of the processing chamber 205 and may be configured to support a substrate during etching or other process operations. The pedestal 235 may have one or more chucking mechanisms, including, for example, electrostatic, vacuum, or gravity, in various embodiments. In some embodiments, the pedestal 235 may be rotatable or translatable and may be raised and lowered toward or from the gas distribution assembly 225. In some embodiments, the pedestal 235 may include one or more lift pins to assist in transferring the substrate into and out of the processing chamber 205. The pedestal 235 may further include a heating or cooling mechanism to maintain the temperature of the substrate during processing operations.

[0027]

[0038] The pedestal 235 may include an inset heating element, including a filament, or may include one or more tubes or channels configured to pass a temperature-control fluid, which may raise or lower the temperature as appropriate. The pedestal 235 may include a platform for supporting a substrate that is or includes a ceramic heater. In embodiments, the ceramic heater may heat the substrate to a specific operating temperature, including a range from about 20°C to over 1000°C. In embodiments, the ceramic heater may further heat the substrate to above about 50°C, above about 100°C, above about 150°C, above about 200°C, above about 250°C, above about 300°C, above about 350°C, above about 400°C, above about 500°C, or more. In some embodiments, the ceramic heater may further maintain the substrate temperature below about 1000°C, below about 900°C, below about 800°C, below about 700°C, below about 600°C, or below about 500°C. In some embodiments, the ceramic heater may further be configured to heat or maintain the substrate temperature between about 100°C and about 500°C, or in some embodiments, between about 300°C and about 500°C. In some embodiments, the heater is configured to maintain the substrate temperature below about 300°C. In that case, an alternative metal heating element may be used in place of the ceramic heater. For example, a coated aluminum heater may be used, or the heater may be embedded or coated on an aluminum or treated aluminum pedestal.

[0028]

[0039] Components of the processing chamber 205 may be configured to withstand the operating environment during etching or other processing operations. The components of the processing chamber 205 may be anodized or oxidized materials, including, for example, hard-anodized aluminum. Components within the processing chamber 205 that may come into contact with plasma effluents or other corrosive materials may be treated or coated to protect against corrosion. In some embodiments, alternative materials may also be used to prevent corrosion from plasma effluents containing fluorine or chlorine. For example, in some embodiments, one or more components within the processing chamber 205 may be ceramic or quartz. As a specific example, one or more of the gas distribution assembly 225, the spacer 222, the pumping liner 230, or other components that may be contacted by plasma or non-plasma precursors may be or include quartz or ceramic. Additionally, the supply tube 216 may be or include quartz, including a quartz liner within the supply tube 216. In some embodiments, the supply tube may be aluminum or hard anodized aluminum and may be characterized by a quartz interior surface. For example, the RPS unit 210 may also be lined with quartz to protect the internal components from corrosion by chlorine-containing precursors dissociated within the RPS unit 210. The RPS unit 210 may include anodized metal, and the chamber cavity of the RPS unit 210 may be lined with quartz to further protect against corrosion.

[0029]

[0040] By utilizing a remote plasma from the RPS unit 210, the processing chamber 205 may be further protected from internal corrosion caused by plasma generation. In some embodiments, the processing chamber 205 may not be configured to generate plasma, and plasma generation may be performed outside the processing chamber 205 in the RPS unit 210. In some embodiments, additional plasma processing may be performed within the processing chamber 205, such as by capacitively coupled plasma, although other plasma sources may be used. For example, the gas box 220 and one or more components of the gas distribution assembly 225 may be used as electrodes from which a capacitively coupled plasma may be generated. Additional or alternative plasma components may be used within the chamber to shorten the path from plasma generation to interaction with the substrate, thereby preventing easy recombination of plasma effluents.

[0030]

[0041] Precursors dissociated by the plasma undergo a residence time to recombine. For example, after a chlorine-based precursor dissociates in the RPS unit 210, the precursor or plasma effluent may flow through the supply pipe 216 into the processing chamber 205 and then interact with a substrate on the pedestal 235. Depending on the length of the travel path for the radical effluent, the effluent or radicals may recombine, and the reactivity of the radical precursor may be at least partially lost. Furthermore, the more complex the travel path, such as through various tubes and channels, the more protection may be included in the system, as each component in contact with the plasma effluent may be treated or coated to protect it from corrosion. Thus, the processing chamber 205 may include a relatively straight travel path from the RPS unit 210 into the processing chamber 205 and then through the exhaust plenum 230. Furthermore, once in the processing chamber 205, the precursor or plasma effluent may travel through one or more in-line features of the gas distribution assembly 225 to contact the substrate. Components of the gas distribution assembly 225 can be used to improve flow uniformity towards the substrate, but the precursor flow path lengths may otherwise be kept short to reduce recombination of plasma effluents and residence time within the processing chamber 205.

[0031]

[0042] FIG. 3 illustrates a schematic partial cross-sectional view of an exemplary semiconductor processing chamber 300 in accordance with some embodiments of the present technique. FIG. 3 may include one or more components described above with respect to FIG. 2 and may illustrate additional details associated with the chamber. Chamber 300 is understood to include any feature or aspect of system 200 described above in some embodiments. Chamber 300 may be used to perform semiconductor processing operations, including deposition of hard mask materials as described above, as well as other deposition, removal, and cleaning operations. Chamber 300 may illustrate a partial view of a processing region of a semiconductor processing system and may not include all of the components understood to be incorporated in some embodiments of chamber 300.

[0032]

[0043] As mentioned, FIG. 3 may show a portion of a processing chamber 300. The chamber 300 may include several lid stack components. The several lid stack components may facilitate the supply or distribution of materials through the processing chamber 300 into a processing region 305. In the processing region 305, a substrate 306 may be disposed, for example, on a pedestal 310. A chamber lid plate 315 may extend across one or more plates of the lid stack and may provide structural support for components such as a remote plasma source (“RPS”) unit 370. The RPS unit 370 may provide precursors or plasma effluents for chamber cleaning or other processing operations. The RPS unit 370 may be stabilized on the chamber lid plate 315. Some embodiments may utilize additional support members (not shown) that may be coupled to the processing chamber 300 at one or more locations around the processing chamber 300 to properly distribute the weight of the RPS unit 370 to protect the components from shear or other stresses associated with the weight of the RPS unit 370. A supply pipe 327 defining a central aperture may extend between the RPS unit 370 and the processing chamber 300 for supplying one or more precursors to the processing chamber 300.

[0033]

[0044] An output manifold 320 may be disposed on the lid plate 315 and may define a central aperture 322. The central aperture 322 may extend around a central axis of the chamber 300 or the output manifold 320. The processing chamber 300 may also include an insulator 325. The insulator 325 may electrically or thermally isolate the output manifold 320 from other lid stack components. The insulator 325 may also define a central aperture 328. The central aperture 328 may be axially aligned with the central aperture 322 of the output manifold 320. The processing chamber 300 may also include a gas box 330. An insulator may be disposed on the gas box 330.

[0034]

[0045] The gas box 330 may be characterized by a first surface 331 and a second surface 332, which may be opposite the first surface. A central aperture 333 may extend completely through the gas box from the first surface 331 to the second surface 332. The central aperture 333 may be axially aligned with the central aperture 322 of the output manifold 320 and may be axially aligned with the central aperture 328 of the insulator 325. The apertures may define channels within which the supply tubes 327 may be disposed. The gas box 330 may also define one or more channels that may be fluidly accessed through the gas box 330, allowing multiple precursors to be delivered at various profiles through the lid stack.

[0035]

[0046] For example, the gas box 330 may define an annular channel 335 that extends within the gas box 330 and may be recessed from the first surface 331. As will be further described below, the annular channel 335 may be fluidly accessed through an inlet aperture. The inlet aperture may be located anywhere around the gas box 330 and may provide a coupling for one or more precursors to be supplied from a gas panel or manifold. The inlet aperture may extend through the first surface 331 to provide precursors into the gas box 330, as illustrated by the arrows. In some embodiments, the annular channel 335 may be concentric with a central aperture 333 of the gas box 330. The gas box 330 may also define one or more outlet apertures 336. The outlet apertures 336 may be defined through the annular channel 335 and may extend from the annular channel 335 through the second surface 332 of the gas box 330. Thus, one or more precursors supplied through the gas box 330 into the annular channel 335 may bypass the RPS unit 370 and be supplied through the gas box 330 to one or more outer regions of the gas box 330.

[0036]

[0047] The gas box 330 may include additional features. For example, the gas box 330 may define cooling channels 357. The cooling channels 357 may allow cooling fluid to flow around the gas box 330, allowing for further temperature control. As shown, the cooling channels 357 may be defined in a first surface 331 of the gas box 330, and a lid may extend around the cooling channels to form an airtight seal. The cooling channels 357 may extend around a central aperture 333 and may be concentric with the central aperture 333. As shown, an annular channel 335 may be formed or defined in the gas box 330 between the cooling channels and a second surface of the gas box 330. In some embodiments, the annular channel 335 may be vertically aligned with the cooling channels 357 and may be offset from the cooling channels 357 within the depth of the gas box 330. In some embodiments, the gas box 330 may include one or more laminated plates to form the annular channel 335. The plates may be bonded, welded, or otherwise joined together to form the complete structure.

[0037]

[0048] For example, the gas box 330 may include at least one plate and may include two, three, four, or more plates depending on the features to be formed. As shown, the gas box 330 may include two or three plates, which may allow multiple paths to be formed to further distribute the precursor toward the annular channel 335. For example, if there is a single point of delivery, uniformity may be achieved by adjusting the conductivity within the channel relative to the exit aperture. However, by utilizing one or more conductive paths defined within the gas box 330, precursor may be delivered to multiple locations within the annular channel 335. This may improve delivery uniformity through the gas box 330 and may allow for larger diameter exit apertures without sacrificing delivery uniformity.

[0038]

[0049] In some embodiments, the semiconductor processing chamber 300 may also include additional components, such as a blocker plate 350 and a face plate 355. The blocker plate 350 may define several apertures that may act as chokes to increase radial diffusion to improve delivery uniformity. The blocker plate 350 may be the first point through the lid stack where precursors supplied to the central aperture 333 of the gas box 330 and precursors supplied to the annular channel 335 of the gas box 330 may intermingle. As shown, a space 352 may be created or defined between the gas box 330 and the blocker plate 350. The space 352 may be fluidly accessible from both the central aperture 333 and the plurality of exit apertures 336. Precursors supplied into the zones may then at least partially mix or overlap before passing through the lid stack. An amount of overlap may be provided by allowing an amount of mixing before contacting the substrate surface. This may create a smoother transition at the substrate and may reduce the formation of boundary regions on the film or substrate surface. The face plate 355 may then deliver the precursors to the processing region. The processing region may be at least partially defined from above by the face plate 355.

[0039]

[0050] Supply tube 327 may extend through each of central apertures 322, 328, and 333. An upper portion 372 of supply tube 327 may be coupled to RPS unit 370, and a lower portion 374 of supply tube 327 may extend through second surface 332 of gas box 330. FIG. 4 shows a schematic partial cross-sectional view of supply tube 327. In many embodiments, supply tube 327 may be characterized by a generally cylindrical sidewall, although it will be understood that sidewalls of other shapes are possible. Upper portion 372 of supply tube 327 defines a fluid lumen that may receive precursor or plasma effluent from RPS 370 and may deliver precursor or plasma effluent to chamber 300 for chamber cleaning and / or other processing operations. Upper portion 372 of supply tube 327 may taper from a large opening to a smaller diameter that defines the main body of supply tube 327. The RPS unit 370 may also be used to generate a positive pressure flow of purge gas down the supply pipe 327 to help eliminate RPS backflow during deposition operations. For example, a purge gas, such as argon, helium, or hydrogen, may be flowed downward from the RPS through the supply pipe 327. The purge gas may be flowed from the RPS unit 370 at various flow rates, which may be based on the flow rate of the deposition gas through the supply pipe 327. For example, the purge gas may be flowed from the RPS unit 370 at a flow rate of about 100 standard cubic centimeters per minute (sccm) or more, about 200 sccm or more, about 300 sccm or more, about 400 sccm or more, about 500 sccm or more, about 600 sccm or more, about 700 sccm or more, about 800 sccm or more, about 900 sccm or more, about 1 liter / minute or more, about 2 liters / minute or more, or higher, although higher or lower flow rates may be used based on the flow rate of the deposition gas used in a particular processing application. The apertures 375 may be sized based on the flow rate and / or flow velocity required by a particular deposition application. For example, the apertures 375 may have a diameter of about 0.010 inches or greater, about 0.020 inches or greater, about 0.030 inches or greater, about 0.040 inches or greater, about 0.050 inches or greater, or greater, to deliver deposition gases at a desired flow rate and / or flow velocity.

[0040]

[0051] An upper region of the sidewall of the supply tube 327 may define several radially arranged apertures 375. Each of these apertures 375 may be aligned with an outlet of the output manifold 320. The outlet of the output manifold 320 may supply deposition gas to the interior of the supply tube 327. For example, the deposition gas may be flowed through the apertures 375 at a flow rate of at least or about 1 liter / minute, at least or about 2 liters / minute, at least or about 3 liters / minute, or higher, although higher or lower flow rates may be used to meet the needs of a particular processing application. The apertures 375 may be arranged at regular or irregular intervals around the circumference of the supply tube 327. For example, four apertures 375 may be arranged, one aperture 375 every 90 degrees around the circumference of the supply tube 327. However, it will be understood that any number of apertures 375 may be provided in any arrangement. In some embodiments, the apertures 375 may be arranged in multiple rows along the length of the supply tube 327. By way of example only, the apertures 375 may be arranged in two rows spaced a vertical distance apart. For example, two rows of four apertures 375 may be defined by the supply tube 327, with the rows spaced a vertical distance apart.

[0041]

[0052] Some or all of the apertures 375 may extend through the sidewall of the supply tube 327 at an angle that aligns with the radial lines of the supply tube 327. However, in some embodiments, some or all of the apertures 375 may be angled as they move away from the central axis of the supply tube 327. For example, the top row of apertures 375 may be radially aligned, while the bottom row of apertures 375 may be angled as they move away from the central axis of the supply tube 327. In some embodiments, the apertures 375 may be angled as they move away from the central axis by between about 1 and 10 degrees, between about 2 and 9 degrees, between about 3 and 8 degrees, between about 4 and 7 degrees, between about 5 and 6 degrees, etc. In some embodiments in which the apertures 375 are arranged in multiple rows, the apertures 375 in one or more of the rows may have an angular position relative to the central axis of the supply tube 327 that is offset from the angular position of the apertures 375 in at least one other row. For example, the apertures 375 may be arranged in an upper row of four apertures 375 and a lower row of four apertures 375. The four apertures 375 in each row may be spaced at 90-degree intervals, with the upper and lower rows offset from each other by 45 degrees. The circumference of the supply tube 327 thereby includes an aperture every 45 degrees. In some embodiments, the apertures 375 in multiple rows of apertures 375 may be vertically aligned with each other at similar angular positions.

[0042]

[0053] As mentioned above, an inert purge gas, such as argon, helium, or hydrogen, may be flowed down supply pipe 327 from RPS unit 370 at a location above aperture 375. This flow of purge gas from RPS unit 370 creates a downward positive pressure fluid flow that prevents RPS backflow and eliminates the possibility that backflow could blow any particulates in RPS unit 370 into processing chamber 300 and onto the substrate being processed.

[0043]

[0054] FIG. 5 illustrates a schematic partial cross-sectional view of an exemplary semiconductor processing chamber 500 in accordance with some embodiments of the present technique. FIG. 5 may include one or more of the components described above with respect to FIGS. 2 and 3 and may illustrate additional details related to the chamber. It is understood that chamber 500 includes any feature or aspect of systems 200 and / or 300 described above. Chamber 500 may illustrate a partial view of a processing region of a semiconductor processing system and may not include all of the components understood to be incorporated in some embodiments of chamber 500. Chamber 500 may include, for example, a processing region 505 in which a substrate 506 may be disposed on a pedestal 510, an RPS unit 570, an output manifold 520 defining a central aperture 522, an insulator 525 defining a central aperture 528, and a gas box 530 defining a central aperture 533. In some embodiments, semiconductor processing chamber 500 may also include additional components, such as a blocker plate 550 or a faceplate 555.

[0044]

[0055] Supply pipe 527 may extend through each of central apertures 522, 528, and 533. An upper portion 572 of supply pipe 527 may thereby be coupled to RPS unit 570, and a lower portion 574 of supply pipe 527 may extend through gas box 530. Supply pipe 527 provides a flow path from RPS unit 570 to processing chamber 500, allowing RPS unit 570 to supply precursors and / or plasma effluents to chamber 300 for chamber cleaning and / or other processing operations. FIG. 6 is a schematic partial cross-sectional view of supply pipe 527. In many embodiments, supply pipe 527 may be characterized by a generally cylindrical sidewall, although it will be understood that sidewalls of other shapes are possible. The upper portion 572 of the supply tube 527 may define a fluid lumen that may receive precursors or plasma effluents from the RPS unit 570 and may deliver precursors or plasma effluents to the chamber 500 for chamber cleaning or other processing operations. The upper portion 572 of the supply tube 527 may taper from a large opening to a smaller diameter that defines the main body of the supply tube 527. The upper region of the sidewall of the supply tube 527 may define several sets of radially arranged apertures. For example, a set of upper apertures 575 and a set of lower apertures 577 may be defined by the sidewall of the supply tube 527.

[0045]

[0056] The lower apertures 577 may be aligned with outlets of the output manifold 520 to supply deposition gas from the output manifold 520 to the interior of the supply tube 527. For example, deposition gas may flow through the lower apertures 577 at a flow rate of at least about 1 liter / minute, at least about 2 liters / minute, at least about 3 liters / minute, or higher, although higher or lower flow rates may be used to meet the needs of a particular processing application. The lower apertures 577 may be disposed at regular or irregular intervals around the circumference of the supply tube 527. For example, about two or more, about three or more, about four or more, or more lower apertures 577 may be disposed. In that case, one lower aperture 577 may be disposed every 90 degrees around the circumference of the supply tube 527. However, it will be understood that any number of lower apertures 577 may be provided in any arrangement. In some embodiments, the lower apertures 577 may be arranged in multiple rows along the length of the supply tube 527. By way of example only, the lower apertures 575 may be arranged in two rows spaced apart a vertical distance from each other.

[0046]

[0057] The upper apertures 575 may be positioned above the lower apertures 577 and may be aligned with the outlets of the output manifold 520. The upper apertures 575 may provide a flow path for supplying a purge gas, such as argon, helium, or hydrogen, to the interior of the supply tube 527. For example, the purge gas may be flowed through the upper apertures 577 at a flow rate of about 100 sccm or more, about 200 sccm or more, about 300 sccm or more, about 400 sccm or more, about 500 sccm or more, about 600 sccm or more, about 700 sccm or more, about 800 sccm or more, about 900 sccm or more, about 1 liter / minute or more, about 2 liters / minute or more, or higher, although higher or lower flow rates may be used based on the flow rate of the deposition gas used in a particular processing application. By flowing a clean, inert purge gas through upper aperture 575, which is located above lower aperture 577, the flow of purge gas creates a positive pressure fluid barrier that prevents RPS backflow.

[0047]

[0058] The upper apertures 575 may be spaced at regular or irregular intervals around the circumference of the supply tube 527. For example, four apertures 575 may be arranged, with one upper aperture 575 spaced every 90 degrees around the circumference of the supply tube 527. However, it will be understood that any number of lower apertures 575 may be provided in any arrangement. In some embodiments, the upper apertures 575 may be arranged in multiple rows along the length of the supply tube 527. By way of example only, the upper apertures 575 may be arranged in two rows spaced a vertical distance apart.

[0048]

[0059] The upper apertures 575 and the lower apertures 577 may be sized based on the flow rate and / or flow rate required by a particular deposition application. For example, the upper apertures 575 and the lower apertures 577 may have diameters of about 0.010 inches or more, about 0.020 inches or more, about 0.030 inches or more, about 0.040 inches or more, about 0.050 inches or more, or larger to deliver deposition gases at a desired flow rate and / or flow rate. In some embodiments, all of the upper apertures 575 and the lower apertures 577 may be the same size, while in other embodiments, some or all of the upper apertures 575 and / or lower apertures 577 may have different sizes. For example, the upper apertures 575 may have a first diameter, while the lower apertures 577 may have a second diameter that is smaller or larger than the first diameter. In some embodiments in which the upper apertures 575 and / or lower apertures 577 are arranged in multiple rows, the apertures in each row may have different sizes. By way of example only, the upper apertures 575 in the upper row may have a different diameter than the upper apertures 575 in the lower row.

[0049]

[0060] In some embodiments, some or all of the upper apertures 575 and / or lower apertures 577 may extend through the sidewall of the supply pipe 527 at an angle that aligns with the radial lines of the supply pipe 527. However, in some embodiments, some or all of the upper apertures 575 and / or lower apertures 577 may be angled as they move away from the central axis of the supply pipe 527. For example, the upper row of upper apertures 575 and / or the upper row of lower apertures 577 may be radially aligned, while the lower row of upper apertures 575 and / or the lower row of lower apertures 577 may be angled as they move away from the central axis of the supply pipe 527. By angling some or all of the upper apertures 575 and / or the lower apertures 577 as they move away from the central axis, a rotating fluid flow may be created within the supply pipe 527, which may aid in mixing the purge gas and the deposition gas. In some embodiments, the upper apertures 575 and / or lower apertures 577 may be angled away from the central axis by between about 1 and 10 degrees, between about 2 and 9 degrees, between about 3 and 8 degrees, between about 4 and 7 degrees, between about 5 and 6 degrees, etc. Some or all of the upper apertures 575 may be vertically aligned with some or all of the lower apertures 577, while in some embodiments, some or all of the upper apertures 575 may be angularly offset from some or all of the lower apertures 577. In some embodiments in which the upper apertures 575 and / or lower apertures 577 are arranged in multiple rows, the upper apertures 575 and / or lower apertures 577 of one or more rows may have an angular position relative to the central axis of the supply tube 527 that is offset from the angular position of the apertures in at least one other row. For example, as shown, the apertures in each row of both the upper apertures 575 and the lower apertures 577 may be angularly offset from one another such that no apertures share an angular position. However, the upper apertures 575 and / or lower apertures 577 of some rows of upper apertures 575 and / or lower apertures 577 may have similar angular positions (i.e., may be vertically aligned) as the upper apertures 575 and / or lower apertures 577 of other rows.

[0050]

[0061] 7A-7B show schematic diagrams of an exemplary supply tube, according to some embodiments of the present technique. FIG. 7A illustrates a supply tube 700 that may include similar features as the supply tubes 327 and 527 described herein. The supply tube 700 may be characterized by at least one sidewall 702 that defines a fluid lumen 704 that extends from the RPS unit to a processing chamber of the semiconductor processing system. Often, the sidewall 702 may have a generally circular cross-section, thereby making the supply tube 700 generally cylindrical. However, other cross-sectional shapes are possible. The sidewall 702 may define a number of apertures 706 that extend through the thickness of the sidewall 702 to form flow paths to the fluid lumen 704. The apertures 706 may extend through the sidewall 702 along radial lines of the supply tube 700. For example, four apertures 706 may be spaced 90 degrees apart from one another, although other numbers and angular spacings, including irregular spacing, may be utilized in some embodiments. FIG. 7B shows another supply tube 710. Supply tube 710 is similar to supply tube 700 and may include similar features to supply tubes 327 and 527 described herein. Supply tube 710 may be characterized by at least one sidewall 712 that defines a fluid lumen 714 that extends from the RPS unit to a processing chamber of the semiconductor processing system. Sidewall 712 may define several apertures 716 that may extend therethrough and that may be angled away from a central axis of supply tube 710. In some embodiments, the apertures 716 may be angled away from the central axis by between about 1 and 10 degrees, between about 2 and 9 degrees, between about 3 and 8 degrees, between about 4 and 7 degrees, between about 5 and 6 degrees, etc. Often, the arrangement of apertures 716 as illustrated here may be used with a lower row of apertures, such as the lower row of apertures described in connection with FIGS. 3-6 . While FIGS. 7A and 7B show a feed tube with four apertures, it will be understood that any number of apertures may be used in some embodiments. The apertures may be spaced at regular intervals, such as every 90 degrees, or at irregular intervals. Furthermore, it will be understood that the apertures in FIGS. 7A and 7B may represent a single row of apertures, and that multiple rows of apertures may be provided within a single feed tube, as described herein.In some embodiments, an aperture arrangement such as aperture 706 may be used in one row, such as the top row of supply tubes, while an aperture arrangement similar to aperture 716 may be used in another row, such as the bottom row of apertures.

[0051]

[0062] FIG. 8 illustrates a schematic partial cross-sectional view of an exemplary semiconductor processing chamber 800 in accordance with some embodiments of the present technique. FIG. 8 may include one or more components described above with respect to FIGS. 2 and 3 and may illustrate additional details related to the chamber. It is understood that chamber 800, in some embodiments, includes any feature or aspect of system 200 and / or chamber 300 described above. Chamber 800 may illustrate a partial view of a processing region of a semiconductor processing system and may not include all of the components understood to be incorporated in some embodiments of chamber 800. Chamber 800 may include, for example, a processing region 805 in which a substrate 806 may be disposed on a pedestal 810. Chamber 800 may include an RPS unit 870 and a gas box 830, which may define a central opening 833. In some embodiments, semiconductor processing chamber 800 may also include additional components, such as a blocker plate 850 or a faceplate 855.

[0052]

[0063] The supply tube 827 may extend through the central aperture 833, such that an upper portion 872 of the supply tube 827 may be coupled to the RPS unit 870 and a lower portion 874 of the supply tube 827 may extend through the gas box 830. An inert gas plenum 880 may be disposed around at least a portion of the supply tube 827 and may be fluidly coupled to the interior of the supply tube 827 via several apertures 875 defined in the sidewall of the supply tube 827. For example, several lumens 882 may extend between the purge gas plenum 880 and the supply tube 827 to provide flow paths from the purge gas plenum 880 to the apertures 875. In this way, the inert gas plenum 880 may supply an inert gas, such as argon, helium, or hydrogen, to the interior of the supply tube 827 at several circumferential positions to generate a gas vortex within the supply tube 827. This vortex may draw fluid in supply tube 827 downward toward gas box 830 and may prevent backflow of any plasma, precursor, or deposition gases into RPS unit 870. Purge gas may be flowed through aperture 875 at a flow rate of about 100 sccm or more, about 200 sccm or more, about 300 sccm or more, about 400 sccm or more, about 500 sccm or more, about 600 sccm or more, about 700 sccm or more, about 800 sccm or more, about 900 sccm or more, about 1 liter / minute or more, or higher, although higher flow rates are used to counteract higher levels of backflowing gas. In many embodiments, aperture 875 may be located in the upper region of supply tube 827 near RPS unit 870 and create a vortex that acts as a fluid barrier near RPS unit 870. The supply tube 827 may be sized and shaped to maintain a post-ignition pressure of at least 5 Torr, typically at least 10 Torr, and often at least 20 Torr or more.For example, in one particular embodiment, supply tube 827 may have a generally cylindrical sidewall with a diameter of at least or about 1.0 inch, at least or about 1.1 inch, at least or about 1.2 inch, at least or about 1.3 inch, at least or about 1.4 inch, at least or about 1.5 inch, or more, although it will be understood that other sizes and / or shapes of supply tube 827 are possible in various embodiments. Apertures 875 may have a diameter of about 0.050 inch or more, about 0.100 inch or more, about 0.150 inch or more, about 0.200 inch or more, about 0.250 inch or more, about 0.300 inch or more, about 0.350 inch or more, about 0.400 inch or more, about 0.450 inch or more, about 0.500 inch or more, or more, with smaller apertures 875 creating a higher pressure drop within supply tube 827.

[0053]

[0064] In some embodiments, some or all of the apertures 875 may be angled downward toward the gas box 830. Apertures 875 with a downward angle may increase the positive pressure inside the supply pipe 827 so that gas travels away from the RPS unit 870 when introduced through apertures 875. Apertures 875 may be angled downward by between about 1 and 10 degrees, between about 2 and 9 degrees, between about 3 and 8 degrees, between about 4 and 7 degrees, between about 5 and 6 degrees, etc., with respect to the horizontal, and a greater angle of downward tilt may create a stronger vortex.

[0054]

[0065] Apertures 875 may be spaced at regular or irregular intervals around the circumference of supply tube 827. In some embodiments, some or all of apertures 875 may extend through the sidewall of supply tube 827 at an angle aligned with the radial lines of supply tube 827, while in some embodiments, some or all of apertures 875 may be angled away from the central axis of supply tube 827 along the horizontal axis of supply tube 827. FIG. 9 shows a schematic cross-sectional view of supply tube 827 and inert gas plenum 880. Apertures 875 may be coupled to purge gas plenum 880 via lumen 882. As described above, lumen 882 extends between purge gas plenum 880 and supply tube 827 to provide a flow path from purge gas plenum 880 to apertures 875. The apertures 875 may be angled away from the central axis by between about 1 and 10 degrees, between about 2 and 9 degrees, between about 3 and 8 degrees, between about 4 and 7 degrees, between about 5 and 6 degrees, etc. Although shown with 14 apertures 875, it will be understood that any number of apertures 875 may be provided.

[0055]

[0066] In some embodiments, a single RPS unit may be used to supply precursors or plasma effluents to multiple semiconductor processing chambers. FIG. 10 shows a simplified schematic diagram illustrating such an arrangement. In that case, an RPS unit 1070 is coupled to two supply pipes 1027a, 1027b. Each supply pipe 1027a, 1027b may be similar to supply pipe 827 and may supply precursors or plasma effluents to a respective processing chamber 1000a, 1000b. Each processing chamber 1000a, 1000b may be similar to processing chambers 300 and / or 800 described herein. Inert gas plenums 1080a, 1080b may be similar to inert gas plenum 880 and may be disposed around each respective supply pipe 1027a, 1027b. Each inert gas plenum 1080a, 1080b may supply a flow of inert gas to a respective supply pipe 1027a, 1027b, as described above with respect to Figures 8 and 9. By providing a dedicated inert gas plenum for each supply pipe / processing chamber pair, the RPS unit 1070 may not only be isolated from backflow, but also from the gases of each processing chamber 1000. This allows the RPS unit 1070 to avoid crosstalk between different processing chambers 1000.

[0056]

[0067] 11 illustrates a method 1100 for etching a substrate in accordance with an embodiment of the present technique. The method 1100 may include, in operation 1110, flowing deposition gas from a deposition gas source into a supply tube. In operation 1120, a purge gas may be flowed into the supply tube at a plurality of fluid ports radially arranged around the supply tube to prevent backflow of the deposition gas into a remote plasma system (RPS) located at an upper end of the supply tube. In operation 1130, the deposition gas may be flowed into a faceplate coupled to a lower end of the supply tube.

[0057]

[0068] Flowing the deposition gas from the deposition gas source into the interior of the supply tube may include flowing the deposition gas from a manifold into the interior of the supply tube through a plurality of apertures arranged radially around the supply tube and below a plurality of fluid ports. In some embodiments, flowing the deposition gas from the deposition gas source into the interior of the supply tube may include flowing the deposition gas from an RPS into the interior of the supply tube. At least some of the plurality of fluid ports may be angled away from a central axis of the supply tube. At least some of the plurality of fluid ports may be angled downward toward the face plate. Introducing the purge gas into the interior of the supply tube may include flowing the purge gas from a purge gas plenum into the interior of the supply tube through the fluid ports.

[0058]

[0069] By flowing a purge gas into the supply pipe at a location above at least a portion of the deposition gas flow, the method may prevent any gas from the chamber from flowing back into the RPS, which helps prevent alteration of the internal surface of the RPS unit, which eliminates RPS strike failures, and which provides better deposition gas uniformity on the wafer.

[0059]

[0070] In the foregoing description, for purposes of explanation, numerous details are presented in order to facilitate an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that particular embodiments may be practiced without some of these details, or with additional details.

[0060]

[0071] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the embodiments. Additionally, some well-known processes and elements have not been described to avoid unnecessarily obscuring the technology. Therefore, the above description should not be construed as limiting the scope of the technology.

[0061]

[0072] Where a range of values ​​is provided, it is to be understood that, unless the context clearly dictates otherwise, each intervening value between the upper and lower limits of that range is specifically disclosed, to the smallest unit of the lower limit. Any subranges between any stated or unstated intervening value in a stated range, and any other stated or intervening value in that stated range, are also included. The upper and lower limits of these smaller ranges may be individually included or excluded from the range, and each range in which either, neither, or both limits are included in the subranges is also encompassed within the scope, subject to any explicitly excluded limit in the stated range. When a stated range includes one or both limits, ranges excluding either or both of those included limits are also included.

[0062]

[0073] As used in this specification and claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, a reference to an "aperture" includes a plurality of such apertures, and a reference to a "plate" includes a reference to one or more plates and equivalents thereof known to those skilled in the art.

[0063]

[0074] Additionally, the terms "comprise(s)", "comprising", "contain(s)", "containing", "include(s)", and "including", when used in this specification and claims, are intended to specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, operations, or groups.

Claims

1. 1. A semiconductor processing system comprising: a remote plasma source (RPS); and A faceplate and an output manifold disposed between the RPS and the faceplate, the output manifold characterized by a plurality of purge outlets fluidly coupled to a purge gas source and a plurality of deposition outlets fluidly coupled to a deposition gas source; a supply pipe extending between the RPS and the face plate and fluidly coupling the RPS and the face plate; the supply tube is characterized by a generally cylindrical sidewall defining a plurality of apertures therein arranged in a radial pattern; each of the upper plurality of apertures is fluidly coupled to at least one of the plurality of purge outlets; the generally cylindrical sidewall defines a plurality of lower apertures arranged in a radial pattern, the lower apertures being below the upper apertures; Each of the lower plurality of apertures is fluidly coupled to at least one of the plurality of deposition outlets.

2. the upper plurality of apertures are arranged in an upper row and a lower row; 10. The semiconductor processing system of claim 1, wherein the apertures in the lower row are angled away from the central axis of the supply tube.

3. 3. The semiconductor processing system of claim 2, wherein said apertures in said lower row are angled at an angle between 1 and 10 degrees away from said central axis.

4. 3. The semiconductor processing system of claim 2, wherein the angular positions of said apertures in said upper row are offset from the angular positions of said apertures in said lower row.

5. 10. The semiconductor processing system of claim 1, wherein said lower plurality of apertures are arranged in an upper row and a lower row.

6. 10. The semiconductor processing system of claim 1, wherein said upper plurality of apertures are regularly spaced about the circumference of said supply tube.

7. 10. The semiconductor processing system of claim 1, wherein said upper plurality of apertures are offset from said lower plurality of apertures.

8. A method of processing a substrate using the semiconductor processing system of claim 1, comprising: flowing a deposition gas from a deposition gas source into the supply tube; introducing a purge gas into the interior of the supply pipe at a plurality of fluid ports radially arranged around the supply pipe to prevent backflow of the deposition gas into a remote plasma system (RPS) located at the upper end of the supply pipe; and A method of processing a substrate comprising flowing the deposition gas through a faceplate coupled to a lower end of the supply pipe.

9. 9. The method of processing a substrate of claim 8, wherein flowing the deposition gas from the deposition gas source into the interior of the supply pipe comprises flowing the deposition gas from a manifold into the interior of the supply pipe through a plurality of apertures arranged radially around the supply pipe and below the plurality of fluid ports.

10. 9. The method of processing a substrate of claim 8, wherein flowing the deposition gas from the deposition gas source into the interior of the supply pipe comprises flowing the deposition gas from the RPS into the interior of the supply pipe.

11. The method of processing a substrate of claim 8 , wherein at least some of the plurality of fluid ports are angled away from a central axis of the supply pipe.

12. The method of processing a substrate of claim 8 , wherein at least some of the plurality of fluid ports are angled downwardly toward the face plate.

13. 9. The method of processing a substrate of claim 8, wherein introducing the purge gas into the interior of the supply pipe comprises flowing the purge gas from a purge gas plenum through the fluid port into the interior of the supply pipe.

Images