Apparatus for growing silicon carbide single crystals by the solution method
The apparatus provides a stable carbon supply through a floating graphite block system, addressing carbon insufficiency in silicon carbide growth, improving crystal quality and experiment stability while preventing crucible damage.
JP7763017B1Active Publication Date: 2025-10-31BEIJING LATTICE SEMICONDUCTOR CO LTD
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Patent Information
- Application Number
- JP2025505376
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2023-06-08
- Filing Date
- 2023-06-13
- Publication Date
- 2025-10-31
- Estimated Expiration
- 2043-06-13
AI Technical Summary
Technical Problem
In silicon carbide single crystal growth by the solution method, insufficient carbon supply leads to issues such as encapsulation of the solution and crystal cracking, affecting crystal quality and causing economic losses due to crucible melt-down.
Method used
An apparatus with a carbon-supplying graphite block that floats on the surface of the liquid growth raw material, maintained by a graphite block connecting member and slot, ensuring a stable and constant carbon supply during growth, preventing crucible wall melt-through and solution leakage.
Benefits of technology
Stabilizes carbon supply, reduces encrustations, improves crystal quality, and prevents furnace damage, enhancing the reproducibility and stability of single crystal growth experiments.
✦ Generated by Eureka AI based on patent content.
Abstract
The present invention relates to an apparatus for growing silicon carbide single crystals by a solution process, including a growth crucible, a seed crystal rod, an induction heating device, and a source block to which a growth source material can be supplied. The growth crucible includes a crucible body for containing the growth source material and a crucible lid with an opening. One end of the seed crystal rod, to which the seed crystal is fixed, enters the crucible body through the opening. The density of the source block is lower than that of the liquid growth source material, and the source block floats on the surface of the liquid growth source material. The apparatus of the present invention shortens the carbon supply distance and provides a sufficient and stable carbon source over a long period of time during the silicon carbide single crystal growth process, significantly reducing the occurrence of encrustations and effectively improving the growth quality of the single crystal. It also effectively suppresses burn-through on the crucible wall and prevents solution leakage from affecting the temperature field and ultimately damaging the single crystal furnace.
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