Plasma processing apparatus, plasma processing method, and original plate manufacturing method

Abstract

To reduce roughness on the surface of an object to be processed.SOLUTION: A plasma processing device includes a first chamber, an electrode provided in the first chamber and having a surface, and a transport mechanism for mounting, in the first chamber, a structure having a ferromagnetic material and an object to be processed in which the ferromagnetic material is placed between the surface and the object to be processed and has a single polarity in a plane substantially parallel to the surface.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD Embodiments of the present invention relate to a plasma processing apparatus, a plasma processing method, and a method for manufacturing a master. [Background technology]

[0002] BACKGROUND ART In recent years, techniques for treating the surface of an object using a plasma processing apparatus such as a magnetron sputtering apparatus or a plasma chemical vapor deposition apparatus (plasma CVD apparatus) have become known. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-62573 Summary of the Invention [Problem to be solved by the invention]

[0004] The problem to be solved by the present invention is to reduce the roughness of the surface of the object to be processed. [Means for solving the problem]

[0005] The plasma processing apparatus of the embodiment includes a first chamber, an electrode provided in the first chamber and having a surface, a structure having a ferromagnetic material, and a processing object, and a transport mechanism for placing the electrode, the structure having a ferromagnetic material, and a processing object in the first chamber so that the ferromagnetic material is positioned between the surface and the processing object and has a single polarity in a plane approximately parallel to the surface. [Brief explanation of the drawings]

[0006] [Figure 1] 1 is a block diagram showing an example of the configuration of a plasma processing apparatus according to a first embodiment. [Figure 2] 1 is a cross-sectional view showing a configuration example of a plasma processing apparatus according to a first embodiment. [Figure 3]FIG. 10 is a schematic perspective view illustrating an example of the structure of a template. [Figure 4] 1A and 1B are schematic cross-sectional views for explaining an example of the structure of a template. [Figure 5] FIG. 10 is a schematic top view for explaining an example of the layout of the surface MS. [Figure 6] FIG. 10 is a schematic cross-sectional view for explaining an example of the layout of the surface MS. [Figure 7] 1 is a schematic perspective view illustrating an example of the structure of a structure 102. FIG. [Figure 8] 1 is a schematic cross-sectional view illustrating an example of the structure of a structure 102. FIG. [Figure 9] 1 is a flowchart illustrating an example of a plasma processing method. [Figure 10] FIG. 10 is a schematic cross-sectional view illustrating an example of the combining step S2. [Figure 11] FIG. 10 is a schematic cross-sectional view illustrating an example of the combining step S2. [Figure 12] FIG. 10 is a schematic cross-sectional view illustrating an example of the combining step S2. [Figure 13] FIG. 10 is a schematic cross-sectional view illustrating an example of the combining step S2. [Figure 14] FIG. 10 is a cross-sectional view illustrating an example of the plasma treatment step S3. [Figure 15] FIG. 10 is a cross-sectional view illustrating an example of the plasma treatment step S3. [Figure 16] FIG. 10 is a cross-sectional view illustrating an example of the plasma treatment step S3. [Figure 17] FIG. 10 is a cross-sectional view illustrating an example of the plasma treatment step S3. [Figure 18] 1 is a cross-sectional view showing a structural example of the processing object 101 after the plasma processing step S3. FIG. [Figure 19] FIG. 2 is a schematic diagram for explaining fixing behavior. [Figure 20] FIG. 10 is a schematic diagram for explaining reflection behavior. [Figure 21] FIG. 1 is a schematic diagram for explaining sliding behavior. [Figure 22] 10 is a schematic diagram for explaining the behavior of cations P in plasma processing when the magnetic material 122 is not provided. FIG. [Figure 23] 10 is a schematic diagram for explaining the behavior of cations P in plasma processing when a magnetic body 122 is included. FIG. [Figure 24] FIG. 10 is a schematic cross-sectional view illustrating a modified example of the plasma treatment step S3. [Figure 25] FIG. 10 is a schematic cross-sectional view illustrating a modified example of the plasma treatment step S3. [Figure 26] FIG. 10 is a schematic cross-sectional view illustrating a modified example of the plasma treatment step S3. [Figure 27] FIG. 10 is a schematic cross-sectional view illustrating a modified example of the plasma treatment step S3. [Figure 28] FIG. 10 is a block diagram showing an example of the configuration of a plasma processing apparatus according to a second embodiment. [Figure 29] FIG. 10 is a cross-sectional view showing a configuration example of a plasma processing apparatus according to a second embodiment. [Figure 30] 1 is a flowchart illustrating an example of a plasma processing method. [Figure 31] FIG. 10 is a cross-sectional view illustrating an example of the plasma treatment step S3. [Figure 32] FIG. 10 is a cross-sectional view illustrating an example of the plasma treatment step S3. [Figure 33] FIG. 10 is a cross-sectional view illustrating an example of the plasma treatment step S3. [Figure 34] FIG. 10 is a cross-sectional view illustrating an example of the plasma treatment step S3. [Figure 35] FIG. 10 is a schematic cross-sectional view illustrating a modified example of the plasma treatment step S3. [Figure 36] FIG. 10 is a schematic cross-sectional view illustrating a modified example of the plasma treatment step S3. [Figure 37] FIG. 10 is a schematic cross-sectional view illustrating a modified example of the plasma treatment step S3. [Figure 38]FIG. 10 is a schematic cross-sectional view illustrating a modified example of the plasma treatment step S3. [Figure 39] FIG. 10 is a diagram showing a magnetic flux density distribution. [Figure 40] FIG. 10 is a diagram showing an example of a pattern observation image taken with an electron beam microscope. [Figure 41] FIG. 10 is a diagram showing the relationship between the magnetic flux density on the sample surface and the LER reduction effect. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments will be described with reference to the drawings. The relationship between the thickness and planar dimensions of each component, the thickness ratio of each component, etc. shown in the drawings may differ from the actual product. Furthermore, in the embodiments, substantially identical components are assigned the same reference numerals, and descriptions thereof will be omitted as appropriate.

[0008] [First embodiment] In this embodiment, an example of a plasma processing apparatus and a plasma processing method will be described.

[0009] (Plasma processing equipment) Fig. 1 is a block diagram showing a configuration example of a plasma processing apparatus according to the first embodiment. Fig. 2 is a cross-sectional schematic diagram showing a configuration example of a plasma processing apparatus according to the first embodiment. Here, an example of a plasma CVD apparatus is shown, but the present invention is not limited to this, and may be, for example, a sputtering apparatus.

[0010] The plasma processing apparatus 100 includes a plasma processing section 1, a combining / separating section 2, an object carrying-in / out section 3, a structure storage section 4, a connecting section 5, a connecting section 6, a connecting section 7, and a control section 8.

[0011] <Plasma processing unit 1> The plasma processing unit 1 is capable of performing plasma processing on a processing target object 101. As shown in Fig. 2, the plasma processing unit 1 has a chamber 11, a loading / unloading door 12, an electrode 13, an elevation drive mechanism 14, a lift 15, an elevation controller 16, a voltage controller 17, a gas introduction mechanism 18, a gas exhaust mechanism 19, and a temperature control mechanism 20.

[0012] The chamber 11 is a space where plasma processing is carried out.

[0013] The loading / unloading door 12 connects or disconnects the chamber 11 and the connecting portion 5 by opening or closing it.

[0014] The electrode 13 is provided in the chamber 11. The electrode 13 has a surface 13a on which the combination of the processing target 101 and the structure 102 is placed. The electrode 13 can generate plasma from the raw material gas introduced into the chamber 11 in response to the applied voltage. The voltage of the electrode 13 is changed, for example, by alternately applying a positive DC voltage and a negative DC voltage.

[0015] The lifting drive mechanism 14 can raise and lower the combination of the processing object 101 and the structure 102 using a lift 15. The lifting drive mechanism 14 is controlled by a lifting controller 16. Although Fig. 2 shows two lifting drive mechanisms 14, the number of lifting drive mechanisms 14 is not limited to the number shown in Fig. 2.

[0016] The voltage controller 17 has a function of applying a voltage to the electrode 13. The voltage controller 17 has, for example, a positive DC power supply, a negative DC power supply, and a power supply controller that controls the timing of applying the voltage from these DC power supplies.

[0017] Gas introduction mechanism 18 can introduce gas used in plasma processing into chamber 11 via piping. Gas introduction mechanism 18 includes, for example, a tank that stores gas, a pressure pump that is provided in the middle of the piping that connects the tank and chamber 11, and a mass flow controller that is provided in the middle of the piping that connects the tank and chamber 11 and that controls the flow rate of the gas.

[0018] Examples of gases used in the plasma processing include source gases for performing film formation processing on the processing object 101. The source gas contains, for example, carbon atoms.

[0019] The gas exhaust mechanism 19 can exhaust gas from the chamber 11 through piping. For example, the inside of the chamber 11 may be controlled to a vacuum state by the gas exhaust mechanism 19. The gas exhaust mechanism 19 has, for example, a vacuum valve provided midway in the piping connecting the chamber 11 to the outside of the plasma processing apparatus 100.

[0020] The temperature control mechanism 20 can control the temperature of the electrode 13. The temperature control mechanism 20 has, for example, a temperature sensor and at least one of a heater that heats the electrode 13 and a cooler that cools the electrode 13.

[0021] <Merge separation section 2> The combining / separating unit 2 can combine the processing object 101 and the structure 102, and can separate the processing object 101 and the structure 102. As shown in Fig. 2 , the combining / separating unit 2 has a chamber 21, a loading / unloading door 22, a loading / unloading door 23, a loading / unloading door 24, a stage 25, an elevation drive mechanism 26, an elevation drive mechanism 27, a lift 28, and an elevation controller 29.

[0022] The chamber 21 is a space where the object to be treated 101 and the structure 102 are combined and separated.

[0023] The loading / unloading door 22 connects or disconnects the chamber 21 and the connecting portion 5 by opening or closing it.

[0024] The loading / unloading door 23 connects or disconnects the chamber 21 and the connecting portion 6 by opening or closing it.

[0025] The loading / unloading door 24 connects or disconnects the chamber 21 and the connecting portion 7 by opening or closing it.

[0026] The stage 25 is provided in the chamber 21. The stage 25 has a processing object 101, a structure 102, and a surface 25a where the processing object 101 and the structure 102 are joined and separated.

[0027] The lifting drive mechanism 26 can raise and lower the stage 25. The lifting drive mechanism 26 is controlled by an elevator controller 29.

[0028] The lifting drive mechanism 27 can raise and lower the treatment object 101 and the structure 102 using a lift 28. The lifting drive mechanism 27 is controlled by a lifting controller 29. Although Fig. 2 illustrates two lifting drive mechanisms 27, the number of lifting drive mechanisms 27 is not limited to the number shown in Fig. 2.

[0029] <Object loading / unloading section 3> The object transfer section 3 is capable of transferring in and out of the treatment object 101. As shown in FIG. 2 , the object transfer section 3 has a chamber 31, a transfer door 32, a transfer door 33, a cassette 34, an elevation drive mechanism 35, and an elevation controller 36.

[0030] The chamber 31 is a space in which the object to be treated 101 is stored.

[0031] The loading / unloading door 32 connects or disconnects the chamber 31 and the connecting portion 6 by opening or closing it.

[0032] The access door 33 opens and closes to connect or disconnect the chamber 31 to or from the outside of the plasma processing apparatus 100 .

[0033] The cassette 34 can hold the processing objects 101. Fig. 2 shows an example in which the cassette 34 holds three processing objects 101, but the number of processing objects 101 held by the cassette 34 is not limited to the number shown in Fig. 2.

[0034] The lifting drive mechanism 35 can lift and lower the cassette 34. The lifting drive mechanism 35 is controlled by an elevator controller 36. Although Fig. 2 shows two lifting drive mechanisms 35, the number of lifting drive mechanisms 35 is not limited to the number shown in Fig. 2.

[0035] <Structure Storage Department 4> The structure storage unit 4 can store a structure 102 for accommodating the object 101 to be treated.

[0036] <Connection part 5> The connecting unit 5 is provided between the plasma processing unit 1 and the combining / separating unit 2. The connecting unit 5 has a transfer mechanism including a transfer drive mechanism 51, a robot arm 52, and a transfer controller 53.

[0037] The transfer drive mechanism 51 can transfer the processing object 101 and the structure 102 between the chamber 11 and the chamber 21 using a robot arm 52. The operation of the transfer drive mechanism 51 can be controlled by a transfer controller 53.

[0038] <Connection part 6> The connecting unit 6 is provided between the combining / separating unit 2 and the object transfer unit 3. The connecting unit 6 has a transfer mechanism including a transfer drive mechanism 61, a robot arm 62, and a transfer controller 63.

[0039] The transport drive mechanism 61 can transport the processing object 101 between the chamber 21 and the chamber 31 using a robot arm 62. The operation of the transport drive mechanism 61 can be controlled by a transport controller 63.

[0040] <Connection part 7> The connecting unit 7 is provided between the combining / separating unit 2 and the structure storage unit 4. The connecting unit 7 has a transport mechanism having a transport drive mechanism, a robot arm (robot arm 72 described below), and a transport controller. The transport drive mechanism can use the robot arm to transport the structure 102 between the chamber 21 and the structure storage unit 4. The operation of the transport drive mechanism can be controlled by the transport controller.

[0041] <Control unit 8> The control unit 8 may be configured using hardware 80 that uses, for example, a processor, a personal computer, or the like. The hardware 80 is connected, for example, directly to the elevator controller 16, the voltage controller 17, the elevator controller 29, the elevator controller 36, the transport controller 53, the transport controller 63, and the transport controller of the connecting unit 7, or indirectly via a computer network, and can control each operation by sending and receiving information to and from each of them. Note that each operation may be stored as an operation program on a computer-readable recording medium such as a memory, and each operation may be executed by the hardware 80 appropriately reading the operation program stored in the recording medium.

[0042] <Object to be processed 101> The processing object 101 is, for example, an original. The original has a light-transmitting substrate such as a quartz substrate, and examples thereof include a template used in a pattern formation method using nanoimprint lithography (NIL) or a photomask used in optical lithography. Typical templates include, for example, a master template that serves as a mold, and a replica template manufactured using the master template. Note that the processing object 101 is not limited to an original such as a template, and may also be, for example, a semiconductor substrate on which a circuit pattern is formed on a semiconductor wafer such as a silicon wafer. An example in which a replica template is used as the processing object 101 will be described below, but the processing object 101 is not limited to this.

[0043] In a pattern formation method using NIL, a template is pressed onto an imprint material layer such as an ultraviolet-curable resin placed on an object, and the imprint material layer is hardened by irradiating it with light, thereby transferring the pattern to the imprint material layer.

[0044] FIG. 3 is a schematic perspective view illustrating an example of the structure of a template. As shown in FIG. 3, the template has a substrate 111 including a surface MS called a mesa and a groove CO. The substrate 111 is, for example, a quartz glass substrate. Therefore, the substrate 111 includes silicon and oxygen. FIG. 4 is a schematic cross-sectional view illustrating an example of the structure of the template, showing a portion of an XZ cross section of the substrate 111 along line B1-B2 shown in FIG. 3, the X axis and the Z axis perpendicular to the X axis and Y axis.

[0045] Fig. 5 is a schematic top view for explaining an example of the layout of the surface MS, showing a part of the XY plane of the base material 111. Fig. 6 is a schematic cross-sectional view for explaining an example of the layout of the surface MS, showing a part of the XZ cross section of the base material 111 taken along line segment B1-B2 shown in Fig. 5.

[0046] The surface MS includes an imprint pattern 112. The imprint pattern 112 is a pattern transferred by a pattern formation method using NIL. The number, position, and shape of the imprint pattern 112 are not particularly limited. As an example, FIGS. 5 and 6 show an imprint pattern 112 configured as a line and space including convex portions 112a having upper surfaces TS and concave portions 112b having lower surfaces BS. The imprint pattern 112 further has side surfaces (also called line edges) LE of the convex portions 112a between the upper surface TS and the lower surface BS.

[0047] <Structure 102> Fig. 7 is a schematic perspective view illustrating an example of the structure of the structure 102. As shown in Fig. 7, the structure 102 has a tray 121 and a magnetic body 122. Fig. 8 is a schematic cross-sectional view illustrating an example of the structure of the structure 102, showing a part of the XZ cross section of the tray 121 taken along line C1-C2 shown in Fig. 7.

[0048] The tray 121 has a recess 123 for accommodating the object 101 to be processed, a bottom surface 124 of the recess 123, a mounting surface 125 for mounting the electrode 13 or the stage 25, and an opening 126 through which the lift 28 can pass. The tray 121 can be formed using a resin material such as plastic. The tray 121 is preferably a dielectric material. Examples of the dielectric material include resins such as polyether ether ketone (PEEK). The tray 121 is preferably made of a material that has high heat resistance and excellent abrasion resistance and dimensional stability. The number of recesses 123 and openings 126 is not limited to those shown in FIGS. 7 and 8.

[0049] The magnetic body 122 is embedded in the tray 121 and overlaps the recess 123 in the Z-axis direction. The magnetic body 122 has an S-pole region 122a facing the recess 123 and an N-pole region 122b on the opposite side of the recess 123. The magnetic body 122 has a single polarity in a direction parallel to the bottom surface 124 of the recess 123. The magnetic body 122 may be provided on the tray 121 and may be detachable from the tray 121. The magnetic body 122 is, for example, a ferromagnetic body. Examples of ferromagnetic bodies include hard magnetic bodies such as permanent magnets made of materials such as ferrite, samarium-cobalt alloy, neodymium, and iron-aluminum-silicon alloy. The number of magnetic bodies 122 is not limited to the number shown in FIGS. 7 and 8.

[0050] (Plasma treatment method) 9 is a flowchart illustrating an example of a plasma processing method using the plasma processing apparatus 100. As shown in FIG. 9, the example of the plasma processing method includes a selection step S1, a combination step S2, and a plasma processing step S3.

[0051] [Selection step S1] An example of the selection step S1 is to select the processing object 101 in the object carry-in / out section 3 based on the object information from the control section 8, and to select the structure 102 in the structure storage section 4 based on the structure information from the control section 8. The selection of the processing object 101 and the selection of the structure 102 may be performed simultaneously or separately.

[0052] [Combination step S2] 10 to 13 are cross-sectional schematic diagrams for explaining an example of the combining step S2, showing a part of the XZ cross section of the processing object 101. In the combining step S2, the processing object 101 and the structure 102 are combined based on the combining information from the control unit 8.

[0053] The combining step S2 is performed in the combining / separating unit 2 through the following steps. First, as shown in FIG. 10 , the structure 102 is placed on the stage 25 from the structure storage unit 4 through the loading / unloading door 24 using the robot arm 72. At this time, the placement surface 125 of the structure 102 is in contact with the stage 25. Next, as shown in FIG. 11 , the robot arm 72 of the connecting unit 7 is driven to place the processing object 101 on the structure 102 from the object loading / unloading unit 3 through the loading / unloading door 23. At this time, the surface MS of the processing object 101 overlaps the recessed portion 123 of the tray 121. Note that the convex shape and groove CO of the surface MS of the processing object 101 are not shown in FIG. 11 and subsequent figures. Next, as shown in FIG. 12 , the lift 28 is raised by the elevation drive mechanism 27, and the processing object 101 is held by the lift 28. Next, as shown in FIG. 13, the lift 28 is lowered by the lift drive mechanism 27, and the processing object 101 is placed in the recess 123.

[0054] [Plasma treatment step S3] 14 to 17 are cross-sectional schematic diagrams for explaining an example of the plasma processing step S3, showing a part of the XZ cross section of the processing object 101. In the plasma processing step S3, plasma processing is performed on the processing object 101 on the structure 102 based on plasma processing information from the control unit 8. In the plasma processing step S3, for example, a film 113, which will be described later, is formed on the substrate 111.

[0055] The plasma processing step S3 is performed in the plasma processing unit 1 through the following steps. First, as shown in FIG. 14, the structure 102 on which the processing object 101 is placed is moved from the combining / separating unit 2 through the loading / unloading door 12 by using the robot arm 52 and placed on the electrode 13. Next, as shown in FIG. 15, the lift 15 is raised by the elevator controller 16, the lift 15 is used to hold the processing object 101 and the structure 102, and the transport controller 53 drives the robot arm 52 to return the robot arm 52 to its original position. Next, as shown in FIG. 16, the elevator drive mechanism 14 lowers the lift 15, and the processing object 101 and the structure 102 are placed on the surface 13a of the electrode 13. At this time, the magnetic body 122 is placed between the surface 13a of the electrode 13 and the processing object 101, and is placed in the chamber 11 (see FIG. 2) so as to have a single polarity in a plane approximately parallel to the surface 13a.

[0056] Next, plasma processing is performed. The gas introduction mechanism 18 is controlled to introduce the raw material gas into the chamber 11, and as shown in FIG. 17, a voltage is applied to the electrode 13 to generate plasma from the raw material gas. By converting the raw material gas into plasma, negative ions, positive ions, radicals, etc. are generated. After the plasma processing step S3, the raw material gas is discharged from the chamber 11 via the gas discharge mechanism 19. At this time, magnetic field lines ML are formed by the magnetic body 122 in a direction intersecting with the surface 13a, from the south pole region 122a to the north pole region 122b.

[0057] When a voltage is applied, the electrode 13 alternates between, for example, a first potential and a second potential. The first potential is, for example, a positive potential. The second potential is, for example, a negative potential. A voltage such as a pulse voltage or a high-frequency voltage may be applied to the electrode 13. The high-frequency voltage has a frequency of, for example, 0.3 MHz or more and 300 MHz or less, specifically, 4 MHz or more and 13.56 MHz or less.

[0058] When generating plasma, the temperature of the electrode 13 is preferably adjusted, for example, by a temperature control mechanism 20, so that the temperature of the magnetic material 122 is below the Curie temperature. Permanent magnets containing rare earth elements such as neodymium are susceptible to heat. Because the plasma used in the film formation process serves as a heat source, the properties of the magnetic material 122 can be maintained by controlling the temperature of the magnetic material 122. For example, the Curie temperature of neodymium is approximately 330°C.

[0059] After the plasma processing step S3, the processing object 101 and the structure 102 are transported to the combining / separating section 2 by the transport drive mechanism 51 based on separation information from the control section 8, and separated from each other. The structure 102 is transported to the structure storage section 4 by the transport drive mechanism of the connecting section 7. The processing object 101 is transported to the object transfer section 3 by the transport drive mechanism 61, and is transported to the outside of the plasma processing apparatus 100 based on processing completion information sent from the object transfer section 3 to the control section 8.

[0060] 18 is a cross-sectional view showing an example of the structure of the processing object 101 after the plasma processing step S3. The explanation of FIG. 6 can be used as appropriate for the same parts as in FIG. 6. By the plasma processing step S3, a film 113 can be formed as shown in FIG. 18. Thereafter, the film 113 may be removed by a separate process, for example, using oxygen plasma. This makes it possible to manufacture an original (e.g., a template) with reduced roughness.

[0061] By forming the film 113, for example, carbon (C) is embedded in minute recesses (not shown) formed on the surface of the substrate 111, thereby reducing roughness. If the film 113 is a thin film that is light transmissive, it may remain on the surface of the substrate 111. Alternatively, after the film 113 is formed on the surface of the substrate 111, part of the film 113 may be removed, and the exposed minute protrusions (not shown) of the substrate 111 may be flattened by slimming to reduce roughness, and then the film 113 may be completely removed. The film 113 contains, for example, carbon (C). The film 113 may further contain silicon (Si) and oxygen (O). The film 113 may contain a compound such as silicon carbide. The film 113 may be a diamond-like carbon (DLC) film.

[0062] The silicon carbide in the film 113 can be identified by, for example, confirming its electronic state using X-ray photoelectron spectroscopy. The density of the film 113 can be measured by, for example, X-ray reflectometry (XRR). The density of silicon carbide is, for example, about 3.21 g / cm. 3 The density of quartz is, for example, about 2.21 g / cm 3 The density of the mixed layer is, for example, about 2.25 g / cm 3 The thickness of the film 113 is not particularly limited, but is, for example, 3 nm or less.

[0063] The film 113 may contain carbon ions and silicon dioxide because not all of the carbon ions react with the silicon of the substrate 111. Therefore, the film 113 may have a higher density of carbon ions than the substrate 111.

[0064] The plasma treatment may be performed, for example, by plasma ion implantation and deposition (PBII&D). PBII&D involves ion implantation using negative ions and ion deposition using positive ions. In PBII&D, ion energy of, for example, about 100 V per carbon ion is applied depending on the source gas. The ion energy affects the strength of ion implantation. The higher the acceleration voltage, the higher the applied ion energy, and the deeper the carbon ions penetrate into the substrate 111. The source gas may include a carbon compound such as methane (CH), acetylene (CH), or toluene (CHCH).

[0065] When carbon ions are implanted into the substrate 111, the Si-O bonds in the silicon dioxide of the quartz are broken, and silicon and carbon bond to form Si-C bonds. Alternatively, carbon further bonds to oxygen to form Si-O-C bonds. In this way, a film 113 is formed on the outermost surface of the substrate 111.

[0066] The method for forming the film 113 is not limited to the PBII&D method, and other plasma processing methods may also be used. For example, in order to efficiently form the film 113, other methods may be used that can ion-implant active species present during the formation of the film 113 into the surface layer of the substrate 111.

[0067] Next, the mechanism of forming the film 113 will be described. Here, the case of forming a carbon-containing film will be described as an example. The cations contained in the plasma used to form the film 113 exhibit one of the following behaviors when reaching the surface of the substrate 111: settling, reflection, or sliding.

[0068] 19 is a schematic diagram for explaining the fixing behavior. In the fixing behavior, when the cations P reach the surface of the base material 111, the cations P are fixed at the position where they have reached.

[0069] 20 is a schematic diagram for explaining the reflection behavior. In the reflection behavior, when the cations P reach the surface of the substrate 111, the cations P are reflected. The cations P are not deposited on the surface of the substrate 111.

[0070] 21 is a schematic diagram for explaining the sliding behavior. In the sliding behavior, when the cations P reach the surface of the base material 111, the cations P move on the surface.

[0071] When a film 113 is formed on the surface of a substrate 111 having protrusions 112a and recesses 112b as shown in Figure 6, the effect of reducing the roughness of the side surface LE tends to be small. This roughness of the side surface LE is also called line edge roughness (LER). This is thought to be because the trapping force of cations P moving by gliding at the side surface LE is smaller than the trapping force at the top surface TS. In particular, the larger the aspect ratio of the protrusions 112a, the more likely it is that the effect of reducing roughness tends to be significantly reduced.

[0072] In contrast, in the plasma processing apparatus and plasma processing method of the embodiment, when performing plasma processing, the object to be processed 101 and the structure 102 are placed in the chamber 11 so that the magnetic body 122 is positioned between the surface 13a of the electrode 13 and the object to be processed 101 and has a single polarity in a plane approximately parallel to the surface 13a.

[0073] 22 is a schematic diagram for explaining the behavior of cations P during plasma processing without the magnetic body 122. Without the magnetic body 122, the cations P perform linear motion, moving linearly along a direction intersecting the top surface TS of the substrate 111, as shown in Fig. 22. In this case, the amount of sliding of the cations P is small, and therefore the amount of atoms deposited on the side surface LE relative to the top surface TS is small, which tends to reduce the effect of reducing roughness.

[0074] FIG. 23 is a schematic diagram illustrating the behavior of cations P during plasma processing when the magnetic body 122 is included. When the magnetic body 122 is included, the cations P are accelerated in response to a magnetic field based on the magnetic field lines ML. A Lorentz force acts on the accelerated cations P. This Lorentz force changes the motion of the cations P into a spiral motion according to Fleming's left-hand rule. That is, as shown in FIG. 23, the cations P perform a spiral motion in a direction intersecting the surface 13a of the electrode 13. In this case, the amount of cation P sliding can be increased compared to linear motion, thereby increasing the amount of cations P deposited on the side surface LE relative to the top surface TS. This reduces the roughness of the side surface LE. The amount of cation P sliding can be increased not only on the side surface LE but also on the top surface TS, thereby enhancing the effect of reducing the roughness of the top surface TS. The angular velocity of the spiral motion is proportional to the magnetic flux density of the magnetic body. Therefore, the higher the magnetic flux density, the stronger the spiral motion, thereby enhancing the effect of reducing roughness.

[0075] (Modifications of Plasma Processing Apparatus and Plasma Processing Method) In the explanation of the plasma processing step S3 using Figures 14 to 17, the case where plasma processing is performed using a plasma processing apparatus having an electrode 13 on the underside of the processing object 101 and the structure 102 has been described. However, plasma processing may also be performed using a plasma processing apparatus 100 having an electrode 13 on the upper side of the processing object 101 and the structure 102. The plasma processing step S3 in a modified example of the plasma processing apparatus and plasma processing method will be explained using Figures 24 to 27. Figures 24 to 27 are cross-sectional schematic diagrams for explaining a modified example of the plasma processing step S3, showing a part of the XZ cross section of the processing object 101. Note that the explanations for the other steps are the same as those in the above embodiment, and therefore the explanations can be used as appropriate.

[0076] The modified plasma processing step S3 is performed in the plasma processing unit 1 by the following steps. First, as shown in FIG. 24, the lift 15 is lowered by the elevator controller 16. The lift 15 in the modified plasma processing unit 100 has a hold 15a for holding the processing target 101 and the structure 102. The hold 15a has a function of holding, for example, the substrate 111 together with a tray 121. Next, as shown in FIG. 25, the structure 102 on which the processing target 101 is placed is placed on the hold 15a of the lift 15 from the combination / separation unit 2 through the loading / unloading door 12 using the robot arm 52. At this time, the surface of the tray 121 contacts the hold 15a. Next, as shown in FIG. 26, the lift 15 is raised by the elevator drive mechanism 14, and the processing target 101 and the structure 102 are held between the lift 15 and the electrode 13, and the processing target 101 and the structure 102 are placed on the surface 13a of the electrode 13. At this time, the transport controller 53 drives the robot arm 52 to return the robot arm 52 to its original position. The magnetic body 122 is disposed between the surface 13a of the electrode 13 and the object 101 to be processed, and is placed in the chamber 11 so as to have a single polarity in a plane substantially parallel to the surface 13a.

[0077] Next, the gas introduction mechanism 18 is controlled to introduce the raw material gas into the chamber 11, and as shown in Fig. 27, a voltage is applied to the electrode 13 to generate plasma from the raw material gas to form a film 113. The rest of the description is the same as that of Fig. 17, so the description will be omitted.

[0078] Even when plasma processing is performed using a plasma processing apparatus 100 having an electrode 13 above the processing target 101 and the structure 102, the cations P undergo spiral motion, moving in a spiral shape in a direction intersecting the surface 13a of the electrode 13. In this case, the amount of sliding of the cations P can be increased compared to linear motion, and therefore the amount of cations P deposited on the side surface LE can be increased relative to the upper surface TS. This reduces the roughness of the side surface LE. Note that the amount of sliding of the cations P can be increased not only on the side surface LE but also on the upper surface TS, for example, and therefore the roughness of the upper surface TS can be reduced. Note that the higher the magnetic flux density, the greater the spiral motion, and the greater the effect of reducing roughness.

[0079] This embodiment can be combined with other embodiments as appropriate.

[0080] [Second embodiment] In this embodiment, another example of a plasma processing apparatus and a plasma processing method will be described.

[0081] (Plasma processing equipment) Fig. 28 is a block diagram showing a configuration example of a plasma processing apparatus according to the second embodiment. Fig. 29 is a cross-sectional view showing a configuration example of a plasma processing apparatus according to the second embodiment. Here, an example of a plasma CVD apparatus is shown, but the present invention is not limited to this, and may be, for example, a sputtering apparatus.

[0082] The plasma processing apparatus 100 includes a plasma processing section 1, an object transfer section 3, a connecting section 5, and a control section 8. The plasma processing apparatus of the second embodiment does not include the combining / separating section 2, the structure storage section 4, the connecting section 6, the connecting section 7, and the control section 8 of the plasma processing apparatus of the first embodiment.

[0083] <Plasma processing unit 1> The plasma processing unit 1 is capable of performing plasma processing on a processing target object 101. As shown in Fig. 29, the plasma processing unit 1 has a chamber 11, a loading / unloading door 12, an electrode 13, an elevation drive mechanism 14, a lift 15, an elevation controller 16, a voltage controller 17, a gas introduction mechanism 18, a gas exhaust mechanism 19, and a temperature control mechanism 20.

[0084] The chamber 11 is a space where plasma processing is carried out.

[0085] The loading / unloading door 12 connects or disconnects the chamber 11 and the connecting portion 5 by opening or closing it.

[0086] The electrode 13 is provided in the chamber 11. The electrode 13 has a surface 13a on which the processing target 101 is placed, and a magnetic body 122 provided inside. The electrode 13 can generate plasma from the raw material gas introduced into the chamber 11 in response to the applied voltage. The voltage of the electrode 13 can be changed, for example, by alternately applying a positive DC voltage and a negative DC voltage.

[0087] The magnetic body 122 is embedded in the electrode 13 and overlaps the surface 13a in the Z-axis direction. The magnetic body 122 has an S-pole region 122a facing the surface 13a and an N-pole region 122b on the opposite side of the surface 13a. The magnetic body 122 has a single polarity in a direction parallel to the surface 13a. The magnetic body 122 is, for example, a ferromagnetic body. Examples of ferromagnetic bodies include hard magnetic bodies such as permanent magnets made of materials such as ferrite, samarium-cobalt alloy, neodymium, and iron-aluminum-silicon alloy. The number of magnetic bodies 122 is not limited to the number shown in FIG. 29.

[0088] The lifting drive mechanism 14 can lift and lower the treatment target object 101 using a lift 15. The lifting drive mechanism 14 is controlled by a lifting controller 16. Although Fig. 29 shows two lifting drive mechanisms 14, the number of lifting drive mechanisms 14 is not limited to the number shown in Fig. 29.

[0089] The voltage controller 17 has a function of applying a voltage to the electrode 13. The voltage controller 17 has, for example, a positive DC power supply, a negative DC power supply, and a power supply controller that controls the timing of applying the voltage from these DC power supplies.

[0090] Gas introduction mechanism 18 can introduce gas used in plasma processing into chamber 11 via piping. Gas introduction mechanism 18 includes, for example, a tank that stores gas, a pressure pump that is provided in the middle of the piping that connects the tank and chamber 11, and a mass flow controller that is provided in the middle of the piping that connects the tank and chamber 11 and that controls the flow rate of the gas.

[0091] Examples of gases used in the plasma processing include source gases for performing film formation processing on the processing object 101. The source gas contains, for example, carbon atoms.

[0092] The gas exhaust mechanism 19 can exhaust gas from the chamber 11 through piping. For example, the inside of the chamber 11 may be controlled to a vacuum state by the gas exhaust mechanism 19. The gas exhaust mechanism 19 has, for example, a vacuum valve provided midway in the piping connecting the chamber 11 to the outside of the plasma processing apparatus 100.

[0093] The temperature control mechanism 20 can control the temperature of the electrode 13. The temperature control mechanism 20 has, for example, a temperature sensor and at least one of a heater that heats the electrode 13 and a cooler that cools the electrode 13.

[0094] <Object loading / unloading section 3> The object carry-in / out section 3 can carry in and out the treatment object 101. As shown in Fig. 29, the object carry-in / out section 3 has a chamber 31, a carry-in / out door 32, a carry-in / out door 33, a cassette 34, an elevation drive mechanism 35, and an elevation controller 36.

[0095] The chamber 31 is a space in which the object to be treated 101 is stored.

[0096] The loading / unloading door 32 connects or disconnects the chamber 31 and the connecting portion 5 by opening or closing it.

[0097] The access door 33 opens and closes to connect or disconnect the chamber 31 to or from the outside of the plasma processing apparatus 100 .

[0098] The cassette 34 can hold the objects to be processed 101. Fig. 29 shows an example in which the cassette 34 holds three objects to be processed 101, but the number of objects to be processed 101 held by the cassette 34 is not limited to the number shown in Fig. 29.

[0099] The lifting drive mechanism 35 can lift and lower the cassette 34. The lifting drive mechanism 35 is controlled by a lifting controller 36. Although Fig. 29 shows two lifting drive mechanisms 35, the number of lifting drive mechanisms 35 is not limited to the number shown in Fig. 29.

[0100] <Connection part 5> The connecting unit 5 is provided between the plasma processing unit 1 and the object transfer unit 3. The connecting unit 5 has a transfer mechanism including a transfer drive mechanism 51, a robot arm 52, and a transfer controller 53.

[0101] The transport drive mechanism 51 can transport the processing object 101 between the chamber 11 and the chamber 31 using a robot arm 52. The operation of the transport drive mechanism 51 can be controlled by a transport controller 53.

[0102] <Control unit 8> The control unit 8 may be configured using hardware 80 that uses, for example, a processor, a personal computer, or the like. The hardware 80 is connected, for example, directly to each of the elevator controller 16, the voltage controller 17, the elevator controller 36, and the transport controller 53, or indirectly via a computer network, and can control each operation by sending and receiving information to and from each of them. Note that each operation may be stored as an operation program in a computer-readable recording medium such as a memory, and each operation may be executed by the hardware 80 appropriately reading the operation program stored in the recording medium.

[0103] <Object to be processed 101> The processing object 101 is a mold (template) used in a pattern formation method using, for example, nanoimprint lithography (NIL). Typical templates include, for example, a master template, which is an original, and a replica template manufactured using the master template. Note that the processing object 101 is not limited to a template, and may be, for example, a semiconductor substrate. In the following, an example in which a replica template is used as the processing object 101 will be described, but the processing object 101 is not limited to this.

[0104] In the second embodiment, the magnetic body 122 is disposed inside the electrode 13 of the plasma processing unit 1, so there is no need to combine the processing object 101 with the structure 102. Other details of the processing object 101 are the same as those in the first embodiment, and therefore will not be described again.

[0105] (Plasma treatment method) 30 is a flowchart illustrating an example of a plasma processing method using the plasma processing apparatus 100. As shown in FIG. 30, the example of the plasma processing method includes a selection step S1 and a plasma processing step S3. The plasma processing method of the second embodiment does not include the combining step S2 of the plasma processing method of the first embodiment.

[0106] [Selection step S1] An example of the selection step S1 is to select the processing object 101 in the object carry-in / out unit 3 based on the object information from the control unit 8.

[0107] [Plasma treatment step S3] 31 to 34 are cross-sectional schematic views for explaining an example of the plasma processing step S3, showing a part of the XZ cross section of the processing object 101. In the plasma processing step S3, plasma processing is performed on the processing object 101 based on plasma processing information from the control unit 8.

[0108] The plasma processing step S3 is performed in the plasma processing unit 1 through the following steps. First, as shown in FIG. 31, the object 101 to be processed is placed on the electrode 13 from the object transfer unit 3 through the transfer door 32 using the robot arm 52. Next, as shown in FIG. 32, the lift 15 is raised by the elevator controller 16, the object 101 is held by the lift 15, and the transport controller 53 drives the robot arm 52 to return the robot arm 52 to its original position. Next, as shown in FIG. 33, the lift 15 is lowered by the elevator drive mechanism 14, and the object 101 to be processed is placed on the surface 13a of the electrode 13. At this time, the magnetic body 122 is arranged so as to overlap the surface 13a of the electrode 13 and the object 101 to be processed.

[0109] Next, the gas introduction mechanism 18 is controlled to introduce the raw material gas into the chamber 11, and as shown in Fig. 34, a voltage is applied to the electrode 13 to generate plasma from the raw material gas. By the plasma treatment step S3, a film 113 can be formed in the same manner as in Fig. 18. The rest of the description of the film 113 is the same as that of the first embodiment, and therefore will not be repeated.

[0110] The film 113 is formed under a medium vacuum, for example, at an atmospheric pressure of 0.1 Pa to 100 Pa. At this time, the object to be processed 101 and the structure 102 can be transported under vacuum by using a detachment mechanism that can be detached under vacuum, so that there is no need to open the film formation processing tank to the atmosphere, and the operation time can be shortened.

[0111] After the plasma processing step S3, the source gas is exhausted from the chamber 11 via the gas exhaust mechanism 19. At this time, the magnetic body 122 generates magnetic field lines ML from the south pole region 122a to the north pole region 122b in a direction intersecting with the surface 13a.

[0112] When a voltage is applied, the electrode 13 alternates between, for example, a first potential and a second potential. The first potential is, for example, a positive potential. The second potential is, for example, a negative potential. A voltage such as a pulse voltage or a high-frequency voltage may be applied to the electrode 13. The high-frequency voltage has a frequency of, for example, 0.3 MHz or more and 300 MHz or less, specifically, 4 MHz or more and 13.56 MHz or less.

[0113] When generating plasma, the temperature of the electrode 13 is preferably adjusted so that the temperature of the magnetic material 122 is equal to or lower than the Curie temperature. Permanent magnets containing rare earth elements such as neodymium are susceptible to heat. Because the plasma used in the film formation process serves as a heat source, controlling the temperature of the magnetic material 122 allows the properties of the magnetic material 122 to be maintained.

[0114] After the plasma processing step S3, the processing object 101 is transported to the object transfer unit 3 by the transport drive mechanism 51, and is then transported to the outside of the plasma processing apparatus 100 based on processing completion information sent from the object transfer unit 3 to the control unit 8.

[0115] In the plasma processing apparatus and plasma processing method of the second embodiment, when performing plasma processing, the object to be processed 101 is placed in the chamber 11 so that the magnetic body 122 overlaps the surface 13a of the electrode 13 and the object to be processed 101 and has a single polarity in a plane approximately parallel to the surface 13a.

[0116] When the magnetic material 122 is present, the cations P undergo spiral motion, moving in a spiral shape in a direction intersecting the surface 13a of the electrode 13. In this case, the amount of sliding of the cations P can be increased compared to linear motion, and therefore the amount of cations P deposited on the side surface LE can be increased relative to the top surface TS. This reduces the roughness of the side surface LE. Note that this is not limited to the side surface LE, and the amount of sliding of the cations P can also be increased on the top surface TS, for example, and therefore the roughness of the top surface TS can be reduced. Note that the higher the magnetic flux density, the greater the spiral motion, and the greater the effect of reducing roughness.

[0117] (Modifications of Plasma Processing Apparatus and Plasma Processing Method) In the explanation of plasma processing step S3 using Figures 31 to 34, the case where plasma processing is performed using a plasma processing apparatus having an electrode 13 below the processing object 101 has been described, but plasma processing may also be performed using a plasma processing apparatus 100 having an electrode 13 above the processing object 101. Plasma processing step S3 in a modified example of the plasma processing apparatus and plasma processing method will be explained using Figures 35 to 38. Figures 35 to 38 are cross-sectional schematic diagrams for explaining a modified example of plasma processing step S3, showing a part of the XZ cross section of the processing object 101. Note that the explanations for the other steps are the same as those in the above embodiment, and therefore the explanations can be used as appropriate.

[0118] The modified plasma processing step S3 is performed in the plasma processing unit 1 by the following steps. First, as shown in FIG. 35, the lift 15 is lowered by the elevator controller 16. The lift 15 in the modified plasma processing unit 100 has a hold 15a for holding the processing object 101. The hold 15a has a function of holding, for example, a substrate 111. The lift 15 and the elevator controller 16 may also function as a drive mechanism for controlling the distance between the substrate 111 and the magnetic material 122 along the Z axis. Next, as shown in FIG. 36, the processing object 101 is placed on the hold 15a of the lift 15 from the processing object transfer section 3 through the transfer door 32 using the robot arm 52. At this time, the surface of the processing object 101 is in contact with the hold 15a. Next, as shown in FIG. 37, the lift 15 is raised by the elevator drive mechanism 14, and the processing object 101 is held between the lift 15 and the electrode 13, and the processing object 101 is placed on the surface 13a of the electrode 13. At this time, the transport controller 53 drives the robot arm 52 to return the robot arm 52 to its original position. The magnetic body 122 is arranged in the chamber 11 so as to overlap between the surface 13a of the electrode 13 and the object 101 to be treated, and to have a single polarity in a plane substantially parallel to the surface 13a.

[0119] Next, the gas introduction mechanism 18 is controlled to introduce the raw material gas into the chamber 11, and as shown in Fig. 38, a voltage is applied to the electrode 13 to generate plasma from the raw material gas to form a film 113. The rest of the description is the same as in the first embodiment, so it will not be repeated.

[0120] Even when plasma processing is performed using a plasma processing apparatus 100 having an electrode 13 above the processing target 101, cations P undergo spiral motion, moving in a spiral shape in a direction intersecting with the surface 13a of the electrode 13. In this case, the amount of sliding of cations P can be increased compared to linear motion, and therefore the amount of cations P deposited on the side surface LE can be increased relative to the top surface TS. This reduces the roughness of the side surface LE. Note that the amount of sliding of cations P can be increased not only on the side surface LE but also on the top surface TS, for example, and therefore the roughness of the top surface TS can be reduced. Note that the higher the magnetic flux density, the greater the spiral motion, and the greater the effect of reducing roughness.

[0121] Before generating plasma, the distance between the substrate 111 and the magnetic body 122 in the Z axis direction may be adjusted by changing the position of the processing object 101 relative to the electrode 13 in the Z axis direction using the lift 15 and the elevation controller 16. The magnetic flux density of the magnetic body 122 changes depending on the distance between the substrate 111 and the magnetic body 122, so the magnetic flux density can be adjusted by changing the position of the processing object 101.

[0122] This embodiment can be combined with other embodiments as appropriate. [Example]

[0123] Example 1 In Example 1, a film 113 (hereinafter, carbon film) was formed by a plasma processing method using a plasma processing apparatus 100 according to the first embodiment, which had an electrode 13 on the upper side of a processing object 101 and a structure 102. A quartz substrate sample having a surface with a concave-convex pattern was used as the processing object 101, a neodymium permanent magnet was placed on the structure 102 as a ferromagnetic material, and a carbon film was formed on the concave-convex pattern using the PBII&D method.

[0124] (Examples 2 and 3) The type of ferromagnetic material placed in the structure 102 was changed, and a carbon film was formed under the same conditions as in Example 1. In Example 2, a ferrite permanent magnet was used, and in Example 3, a samarium-cobalt alloy permanent magnet was used.

[0125] 39 shows the magnetic flux density distribution formed directly above the sample. The calculation conditions for the magnetic flux density distribution were: quartz substrate thickness: 6.4 mm, magnet radius: 5 mm, magnet thickness: 4 mm, and magnet residual magnetization: 1.33 T.

[0126] (Comparative Example 1) In Comparative Example 1, a carbon film was formed under the same conditions as in Example 1, except that no permanent magnet was disposed in the structure 102.

[0127] In Examples 1, 2, and 3 and Comparative Example 1, the roughness (line edge roughness) of the side surfaces LE on both sides of the convex portions of the convex-concave pattern after carbon film formation was evaluated by observing the convex-concave pattern using an electron microscope. FIG. 40 shows an example of a pattern image observed with an electron microscope. This pattern image has a vertical stripe pattern with three linear convex portions and concave portions between the convex portions. Relatively bright areas in FIG. 40 represent convex portions, and dark areas represent concave portions. The horizontal width of the concave portions is 20 nm. The boundary between the convex portion and the concave portion corresponds to the side surface LE (line edge). The line edge roughness is the variation in the line edge position expressed as 3σ (three times the standard deviation).

[0128] FIG. 41 shows the relationship between the magnetic flux density on the sample surface and the LER reduction effect. The horizontal axis of FIG. 41 represents the magnetic flux density on the sample surface due to the permanent magnet. The vertical axis of FIG. 41 represents the value obtained by dividing the LER after carbon film deposition by the LER before film deposition (LER reduction effect, desired small characteristic). In Comparative Example 1, which did not use a magnetic material, the magnetic flux density was 0 mT. In Example 1, which used a neodymium permanent magnet, the magnetic flux density was 64 mT. In Example 2, which used a ferrite permanent magnet, the magnetic flux density was 17 mT. In Example 3, which used a samarium-cobalt alloy permanent magnet, the magnetic flux density was 47 mT. As can be seen from FIG. 41, the LER reduction effect is improved by placing a permanent magnet in the structure 102. Furthermore, FIG. 41 shows that the higher the magnetic flux density, the greater the LER reduction effect. Furthermore, it can be seen that the LER reduction effect is further improved when the magnetic flux density is 20 mT or higher.

[0129] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0130] 1...plasma processing section, 2...combining and separating section, 3...object loading / unloading section, 4...structure storage section, 5...connecting section, 6...connecting section, 7...connecting section, 8...control section, 11...chamber, 12...loading / unloading door, 13...electrode, 13a...surface, 14...lifting drive mechanism, 15...lift, 15a...hold, 16...lifting controller, 17...voltage controller, 18...gas introduction mechanism, 19...gas exhaust mechanism, 20...temperature control mechanism, 21...chamber, 22...loading / unloading door, 23...loading / unloading door, 24...loading / unloading door, 25...stage, 25a...surface, 26...lifting drive mechanism, 27...lifting drive mechanism, 28...lift, 29...lifting controller, 31...chamber, 32...loading / unloading door, 33...loading / unloading door, 34...cassette, 35...lifting drive mechanism, 36...lifting controller, 51...transport drive mechanism, 52...robot arm, 53...transport controller, 61...transport drive mechanism, 62...robot arm, 63...transport controller, 72...robot arm, 80...hardware, 100...plasma processing apparatus, 101...object to be processed, 102...structure, 111...substrate, 112...imprint pattern, 112a...convex portion, 112b...concave portion, 113...film, 121...tray, 122...magnetic material, 122a...south pole region, 122b...north pole region, 123...concave portion, 124...bottom surface, 125...mounting surface, 126...opening.

Claims

1. a first chamber; an electrode disposed within the first chamber and having a surface; a transport mechanism for placing a structure having a ferromagnetic material and a processing object in the first chamber such that the ferromagnetic material is disposed between the surface and the processing object and has a single polarity in a plane substantially parallel to the surface; Equipped with a second chamber; and a stage provided in the second chamber for combining the structure and the processing object; Further comprising: The transfer mechanism transfers the structure and the processing object between the first chamber and the second chamber.

2. the structure has a tray including a recess for placing the object to be treated, The plasma processing apparatus according to claim 1 , wherein the ferromagnetic material is embedded in the tray and overlaps the recess.

3. 3. The plasma processing apparatus according to claim 1, wherein the ferromagnetic body forms magnetic lines of force in a direction intersecting the surface.

4. 4. The plasma processing apparatus according to claim 1, further comprising a voltage controller for applying a voltage to the electrode.

5. 5. The plasma processing apparatus according to claim 1, further comprising a temperature control mechanism for controlling the temperature of said ferromagnetic body to a temperature equal to or lower than the Curie temperature of said ferromagnetic body.

6. 6. The plasma processing apparatus according to claim 1, further comprising a drive mechanism for controlling a distance between the object to be processed and the ferromagnetic body.

7. The plasma processing apparatus according to claim 1 , wherein the structure is detachable from the electrode.

8. The plasma processing apparatus according to claim 1 , wherein the object to be processed comprises a substrate having a concave-convex pattern.

9. A first chamber; an electrode disposed within the first chamber and having a surface; a transport mechanism for placing a structure having a ferromagnetic material and a processing object in the first chamber such that the ferromagnetic material is disposed between the surface and the processing object and has a single polarity in a plane substantially parallel to the surface; Equipped with The plasma processing apparatus further comprises a temperature control mechanism for controlling the temperature of the ferromagnetic body to a temperature equal to or lower than the Curie temperature of the ferromagnetic body.

10. A first chamber; an electrode disposed within the first chamber and having a surface; a transport mechanism for placing a structure having a ferromagnetic material and a processing object in the first chamber such that the ferromagnetic material is disposed between the surface and the processing object and has a single polarity in a plane substantially parallel to the surface; Equipped with The plasma processing apparatus further comprises a drive mechanism for controlling the distance between the processing object and the ferromagnetic body.

11. A first chamber; an electrode disposed within the first chamber and having a surface; a transport mechanism for placing a structure having a ferromagnetic material and a processing object in the first chamber such that the ferromagnetic material is disposed between the surface and the processing object and has a single polarity in a plane substantially parallel to the surface; Equipped with The plasma processing apparatus, wherein the structure is detachable from the electrode.

12. A first chamber; an electrode disposed within the first chamber and having a surface; a transport mechanism for placing a structure having a ferromagnetic material and a processing object in the first chamber such that the ferromagnetic material is disposed between the surface and the processing object and has a single polarity in a plane substantially parallel to the surface; Equipped with The plasma processing apparatus includes a substrate having a concave-convex pattern as the processing object.

Images