Heat medium supply device and substrate processing apparatus including the same

Abstract

To provide a thermal medium supply device for supplying a heat medium to regulate temperature and a substrate processing apparatus including the same.SOLUTION: A thermal medium supply device for supplying a thermal medium to a process chamber 10 in which a processing space for substrate processing is formed includes a plurality of heat medium flow path portions 100 that are respectively connected to walls of mutually divided process chambers and supply a heat medium, and a plurality of heat medium heating portions (heat medium heating portion 300) that form a part of the heat medium flow path portion and independently heat the heat medium supplied through the heat medium flow path portion.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a heat medium supplying device and a substrate processing apparatus including the same, and more particularly to a heat medium supplying device that supplies a heat medium to adjust the temperature of a process chamber body, and a substrate processing apparatus including the same. [Background technology]

[0002] 2. Description of the Related Art Generally, a substrate processing apparatus is an apparatus that performs substrate processing such as deposition, etching, and heat treatment on a substrate using a process gas and an atmosphere at an appropriate temperature in a sealed processing space formed by a process chamber.

[0003] In particular, heat treatment is performed on certain thin films deposited on substrates such as silicon wafers and glass for manufacturing semiconductors, flat panel displays, and solar cells to improve the thin film properties, such as crystallization and phase change.

[0004] Representative heat treatment processes include LTPS (Low Temperature Poly Crystallization Silicon), which forms TFTs using polycrystalline silicon on a glass substrate to manufacture high-quality displays such as AMOLED, and a process of forming and curing polyimide on a substrate to form a flexible substrate.

[0005] In addition, the heat treatment process may include a process of crystallizing amorphous silicon deposited on the substrate into polysilicon when manufacturing a liquid crystal display or a thin-film crystalline silicon solar cell.

[0006] Meanwhile, conventional substrate processing apparatuses have a problem in that various process gases and by-products used and generated during the substrate processing process condense on the inner wall surface of the process chamber, which has a relatively low temperature, thereby contaminating the apparatus.

[0007] To address this issue, conventional substrate processing apparatuses supply a heat medium to the inner wall surface of the process chamber to maintain the temperature of the inner wall surface of the process chamber at 70°C or higher. More specifically, the heat medium is circulated through the process chamber, a heat medium supply device, and a heat exchanger, thereby continuously supplying the heat medium at an appropriate temperature to the process chamber.

[0008] However, in conventional substrate processing apparatuses, the maximum temperature for a process in the process chamber is limited because the allowable temperature of the heat transfer medium is limited by the heat transfer medium circulation structure. For example, there is a problem in that the temperature of the processing space in the process chamber cannot be raised above 550°C.

[0009] More specifically, in order to remove by-products (solvents) adhering to the inner walls of the process chamber during the polyimide curing process, it is necessary to periodically heat the internal temperature of the process chamber to 550°C or higher. However, with a conventional heat transfer medium circulation structure using a single heat exchanger, there is a risk that the heat transfer medium may overheat when heating the internal temperature of the process chamber to 550°C or higher, which can cause damage or deformation to the process chamber, and there is a problem that the increase in the internal temperature of the process chamber is limited.

[0010] On the other hand, although it is possible to heat the internal temperature of the process chamber to 550°C or higher using multiple heat exchangers and a heat medium circulation structure, there are problems such as increased costs and excessively large installation space due to the large number of heat exchangers.

[0011] Furthermore, since the heat medium is heated through a single heat exchanger and resupplied to the process chamber, the temperature of the heat medium supplied to each wall of the process chamber is the same, which makes it difficult to control the temperature at each position in the process chamber.

[0012] Furthermore, conventional substrate processing apparatuses require a heat exchanger, resulting in poor space utilization. When multiple heat exchangers are installed to control the temperature at different process chamber positions, the space utilization rate is further reduced, and maintenance frequency and costs increase. Summary of the Invention [Problem to be solved by the invention]

[0013] SUMMARY OF THE INVENTION In order to solve the above problems, an object of the present invention is to provide a heat medium supplying device capable of adjusting the temperature of each position on the wall of a process chamber, and a substrate processing apparatus including the same. [Means for solving the problem]

[0014] The present invention has been devised to achieve the above-mentioned object of the present invention, and discloses a heat medium supplying device for supplying a heat medium to a process chamber having a processing space formed therein for substrate processing, the heat medium supplying device including: a plurality of heat medium flow path sections respectively connected to walls of the process chamber which are separated from each other and supply the heat medium; and a plurality of heat medium heating sections which form part of the heat medium flow path sections and independently heat the heat medium supplied via the heat medium flow path sections.

[0015] The heating element may further include a heat medium supply line that is branched and connected to the plurality of heat medium flow path portions and that transfers the heat medium from an outside to the plurality of heat medium flow path portions.

[0016] The heat medium flow path section may include a supply flow path that transfers the heat medium heated via the heat medium heating section to the process chamber wall, and a discharge flow path that discharges the heat medium after heat exchange from the wall of the process chamber 10.

[0017] The heat medium heating section may include a heating flow path section in which a flow path through which the heat medium flows is formed, and a heater provided in the heating flow path section to heat the heat medium.

[0018] The heating flow path section may have the flow path formed in a spiral shape relative to the longitudinal direction.

[0019] The heating channel portion may be formed such that the channel guides the heat medium to move between one end and the other end multiple times.

[0020] The heating flow path portion may include a first flow path member having an outlet formed at one end through which the heat medium is discharged and an insertion opening formed at the other end, and a second flow path member having a first internal flow path formed therein, at least a portion of which is inserted into the first flow path member through the insertion opening, and forming a second internal flow path between an outer surface and an inner surface of the first flow path member that is connected to the first internal flow path.

[0021] The heating flow path portion may include a cover member that is arranged to surround the outer surface of the first flow path member and forms a third internal flow path that communicates with the second internal flow path between the cover member and the outer surface of the first flow path member.

[0022] The second flow path member may include a second flange having an inlet formed at one end for introducing the heat medium, and a second extension pipe portion extending from the second flange to the other end, having the first internal flow path formed therein, and at least a portion of which is inserted into the first flow path member.

[0023] The second extension pipe portion 522 may have a plurality of first communication holes formed on an outer circumferential surface of the other end thereof to communicate the first internal flow path with the second internal flow path.

[0024] The first flow path member may include a first flange having an outlet formed at the other end through which the heat medium is discharged, and a first extension pipe portion extending from the first flange toward one end, having the insertion port formed at one end, and into which at least a portion of the second flow path member is inserted.

[0025] The first extension pipe portion may have a plurality of second communication holes formed on an outer peripheral surface of the other end thereof to communicate with the outlet.

[0026] A plurality of the heaters may be provided on the outer surface of the first flow path member.

[0027] The heater may be provided in the flow path.

[0028] The heat medium heating unit may further include a flow velocity reducing member provided in the flow path to reduce the flow velocity of the heat medium.

[0029] The heater may be provided in the flow velocity reduction member.

[0030] The heat medium heating unit may further include a temperature sensor provided in the heating flow path unit to measure the temperature of the flow path.

[0031] The heating element may further include flow rate adjusting units provided in the heat medium flow passage units, respectively, for independently adjusting the flow rates of the heat medium.

[0032] The flow rate adjusting unit is disposed on the opposite side of the heat medium heating unit from the process chamber, and can transfer the heat medium to the heat medium heating unit side.

[0033] The heating system may further include a bypass line that bypasses the heat medium supplied and communicates with the flow path in the heat medium heating unit.

[0034] The bypass line may include a plurality of branch bypass lines connected to the plurality of heat medium heating units, each having a flow rate control valve formed therein, and a main bypass line to which the plurality of branch bypass lines are connected.

[0035] The present invention also discloses a substrate processing apparatus including a process chamber having a processing space for substrate processing formed therein, and heat medium flow passage sections connected to walls of the process chamber that are separated from each other and that supply a heat medium.

[0036] The processing chamber may include a gas injection unit provided on one side thereof for injecting a process gas into the processing space, and a gas exhaust unit provided on the other side thereof for exhausting the processing space.

[0037] The present invention has been made to achieve the above-mentioned object, and discloses a substrate processing apparatus including: a process chamber having a processing space for substrate processing formed therein; a plurality of heat medium flow passage sections connected to walls of the process chamber that are partitioned from each other and that supply a heat medium; and a heat medium supply section that adjusts at least one of the flow rate and temperature of the heat medium and supplies the heat medium to each of the heat medium flow passage sections independently of each other.

[0038] The process chamber may include a gas injection unit provided on a first wall of the process chamber walls, which injects a process gas into the processing space.

[0039] The apparatus may further include a gas exhaust unit disposed in a second wall of the process chamber for exhausting the processing space.

[0040] The first wall and the second wall may face each other.

[0041] The heat medium supply unit can supply the heat medium so that a temperature increase of the first wall body due to the supply of the heat medium is larger than a temperature increase of the remaining walls excluding the first wall body.

[0042] The heat medium supply unit can supply the heat medium to the first wall of the process chamber 10 at a higher temperature than the remaining wall.

[0043] The heat medium supply unit can supply the heat medium so that a temperature rise of the second wall body due to the supply of the heat medium is smaller than a temperature rise of the remaining walls excluding the second wall body.

[0044] The heat medium supply unit can supply the heat medium to the second wall of the process chamber 10 at a temperature lower than that of the remaining wall.

[0045] The heat medium supply unit can supply the heat medium to the first wall of the process chamber 10 at a flow rate per unit time greater than that to the remaining wall.

[0046] The process chamber may be a hexahedron, and a plurality of the heat medium flow passage portions may be connected to each of the first wall body and the second wall body, and a single heat medium flow passage portion may be connected to each of the remaining walls excluding the first wall body and the second wall body.

[0047] The heat medium flow path section includes an upper heat medium flow path section connected to an upper side of one wall of the process chamber, and a lower heat medium flow path section connected to a lower side of the same wall as the upper heat medium flow path section, and the heat medium supply section can supply the heat medium such that the temperature rise on the upper side of the wall of the process chamber due to the heat medium supply via the lower heat medium flow path section is greater than the temperature rise on the lower side of the wall of the process chamber due to the heat medium supply via the upper heat medium flow path section.

[0048] The process chamber may be a hexahedron and may include an opening for introducing and unloading a substrate into the processing space, a front portion including an opening / closing door for opening and closing the opening, and a rear portion formed on a surface opposite the front portion.

[0049] The front surface may have a heating flow path formed in the door through which the heat medium flows, and the corresponding heat medium flow path portion may be connected to the door.

[0050] The heat medium supply unit can supply the heat medium so that a temperature rise in the upper surface of the process chamber due to the supply of the heat medium is smaller than a temperature rise in the lower surface of the process chamber.

[0051] The heat medium flow path section may include a supply flow path that transfers the heat medium supplied via the heat medium supply section to a wall of the process chamber, and a discharge flow path that transfers the heat medium that has completed heat exchange from the wall of the process chamber to the heat medium supply section.

[0052] The remaining heat medium flow path sections, excluding the heat medium flow path sections connected to the first wall body and the second wall body, may be arranged so that the supply flow path is adjacent to the first wall body side and the discharge flow path is adjacent to the second wall body 12 side.

[0053] The heat medium supply unit may include a heat medium supply line through which the heat medium is transferred from the outside and which transfers the heat medium independently to each of the heat medium flow path units, and a heat medium discharge line through which the heat medium is transferred from the heat medium flow path units and discharged to the outside.

[0054] The heat medium supply unit can supply the heat medium so that the temperature of the inner wall of the process chamber becomes lower than the temperature of the processing space.

[0055] The heat medium supply unit can supply the heat medium so that the temperature of the inner wall of the process chamber is maintained at 60°C or higher and lower than 300°C.

[0056] The heat medium supply unit may adjust the temperature of the inner wall of the process chamber by increasing the flow rate and temperature of the heat medium when the temperature of the processing space is 250°C or less, and may adjust the temperature of the inner wall of the process chamber by increasing the flow rate and temperature of the heat medium when the temperature of the processing space exceeds 250°C. [Effects of the Invention]

[0057] The heat medium supply device and the substrate processing apparatus including the same according to the present invention have the advantage that it is possible to maintain a uniform temperature on the inner wall surface by controlling the temperature of the heat medium supplied to the inner wall surface at each specific position of the process chamber, and to prevent condensation of various process gases and by-products on the inner wall surface of the process chamber.

[0058] In particular, the heat transfer medium supply device and the substrate processing apparatus including the same according to the present invention are capable of controlling the temperature of each inner wall surface of the process chamber without multiple heat exchangers, and have the advantage of being able to compensate for the temperature difference between each inner wall surface of the process chamber while reducing the footprint and increasing space utilization.

[0059] In addition, the heat medium supply device and the substrate processing apparatus including the same according to the present invention have the advantages of simplifying the configuration by eliminating the conventional heat exchange device, improving space utilization, and reducing maintenance costs and frequency.

[0060] In particular, the heat transfer medium supply device and the substrate processing apparatus including the same according to the present invention have the advantage that they can process substrates at temperatures above 550°C without any maximum temperature limit for substrate processing by eliminating the conventional heat exchanger and converting the heat transfer medium circulation structure into a simple supply and discharge method.

[0061] Furthermore, the heat medium supply device and the substrate processing apparatus including the same according to the present invention have the advantage that the heat exchange time of the heated and supplied heat medium is increased, the heat exchange efficiency is improved, and the heat medium can be heated with relatively little energy.

[0062] Furthermore, the heat medium supplying device and the substrate processing apparatus including the same according to the present invention have the advantage that the flow rate of the heat medium immediately before supplying can be precisely adjusted via the bypass before supplying the heat medium after heating has been completed. [Brief explanation of the drawings]

[0063] [Figure 1] 1 is a perspective view showing a substrate processing apparatus according to the present invention; [Figure 2] 2 is a diagram schematically showing the connection relationship between a heat medium supply unit and a process chamber in the substrate processing apparatus shown in FIG. 1. FIG. [Figure 3] FIG. 2 is a diagram showing a heat medium supplying device in the substrate processing apparatus of FIG. [Figure 4] 4 is an exploded perspective view showing the configuration of a heat medium heating unit in the substrate processing apparatus of FIG. 3. FIG. [Figure 5] 4 is a cross-sectional view showing the inside of the substrate processing apparatus shown in FIG. 3 with a heater of a heat medium heating unit removed. FIG. [Figure 6] 4 is a cross-sectional view showing a cross section of a heat medium heating unit in the substrate processing apparatus of FIG. 3. FIG. BEST MODE FOR CARRYING OUT THE INVENTION

[0064] A heat medium supplying device and a substrate processing apparatus including the same according to the present invention will now be described with reference to the accompanying drawings.

[0065] As shown in FIG. 1, the substrate processing apparatus according to the present invention includes a process chamber 10 having a processing space for substrate processing formed therein, a plurality of heat medium flow passage units 100 connected to walls of the process chamber 10 that are separated from each other and supply a heat medium, and a heat medium supply unit 200 that independently adjusts at least one of the flow rate and temperature of the heat medium and supplies the heat medium to each of the heat medium flow passage units 100.

[0066] The substrate processing apparatus according to the present invention may further include a gas injection unit 20 provided in a first wall 11 of the walls of the process chamber 10, for injecting a process gas into the processing space.

[0067] Furthermore, the substrate processing apparatus according to the present invention may further include a gas exhaust unit 30 provided in the second wall 12 of the walls of the process chamber 10 to exhaust the processing space.

[0068] The substrate processing apparatus according to the present invention may further include a support frame 40 for supporting the process chamber 10 and on which a heat medium supplying device 50 (described later) is disposed.

[0069] Here, the wall refers to a structure provided to form a sealed processing space inside the process chamber 10, and may include the lower surface and the upper surface.

[0070] Furthermore, the process gas according to the present invention collectively refers to a gas used in a process for processing a substrate, and more specifically, it may refer to a process gas for processing a substrate, a purge gas for exhausting various fumes that may be generated during the process, and various by-products generated through the fumes.

[0071] The substrate 1 to be processed according to the present invention can include all substrates such as substrates used in display devices such as LEDs and LCDs, semiconductor substrates, solar cell substrates, and the like.

[0072] Meanwhile, the substrate processing process of the substrate processing apparatus according to the present invention can be understood to include a deposition process, an etching process, a heat treatment process, etc., and in particular, can include a process of removing impurities from the substrate 1.

[0073] The heat transfer medium is a fluid that moves along a heating flow path formed in the wall of the process chamber 10, thereby exchanging heat with the processing space and the inner wall of the process chamber 10 and adjusting the temperature of the inner wall of the process chamber 10, and cooling water (PCW) can be used.

[0074] On the other hand, as another example, the heat medium is clean dry air (CDA), and it goes without saying that an inert gas such as nitrogen or argon can be used.

[0075] The process chamber 10 has a structure in which a processing space for substrate processing is formed, and various structures are possible.

[0076] That is, the process chamber 10 has an opening 19 at the front through which the substrate 1 is introduced and discharged, and a processing space in which the substrate 1 is processed is formed therein, and various configurations are possible.

[0077] For example, the process chamber 10 may include a chamber body that defines a processing space therein, and an opening / closing door 18 that opens and closes an opening 19 formed in the chamber body.

[0078] The chamber body has a processing space formed therein and an opening 19 at the front for introducing and discharging the substrate 1, which is opened or closed via an opening / closing door 18, allowing the substrate 1 to be introduced into and removed from the chamber body.

[0079] Meanwhile, the chamber body may be formed with a vertical length for processing multiple substrates 1, and may be hexahedral with an opening 19 formed on the front side through which the substrates 1 are introduced and removed.

[0080] More specifically, as shown in Figures 1 and 2, the chamber body may have an opening 19 formed on the front surface of the front side so that a number of substrates 1 can be introduced and removed in the vertical direction, or as another example, may have a number of slots (not shown) formed in the vertical direction so that a number of substrates 1 can be introduced and removed at intervals in the vertical direction.

[0081] Meanwhile, the process chamber 10 can maintain an appropriate temperature by supplying a heat medium to the wall through a heat medium supply unit 200 (described later) to prevent condensation of various process gases and by-products on the relatively low-temperature inner wall side during substrate processing in the processing space.

[0082] More specifically, the process chamber 10 has a flow path formed inside the wall through which the heat medium flows so that the temperature of the wall can be maintained at 70°C or higher, and the heat medium supplied through the heat medium supply unit 200 can flow.

[0083] For example, the process chamber 10 may be a hexahedron and may include a front portion 13 including an opening 19 for introducing and removing a substrate into and from the processing space and an opening / closing door 18 for opening and closing the opening 19, and a rear portion formed on a surface opposite the front portion 13.

[0084] In addition, the process chamber 10 may further include a first wall 11 and a second wall 12 that form the side surfaces together with the front portion 13 and the rear portion, and in this case, the first wall 11 may be the left side surface and the second wall 12 may be the right side surface based on the front.

[0085] The process chamber 10 may have an upper surface 14 and a lower surface formed to form a sealed processing space, and may thus be provided as a hexahedron.

[0086] In this case, as described above, the process chamber 10 has heating channels through which a heat medium flows independently within the front portion 13, rear portion, first wall 11, second wall 12, upper surface 14, and lower surface, thereby maintaining an appropriate temperature level and preventing condensation of various by-products, organic matter, and process gases on the inner surface.

[0087] The front portion 13 can be formed through an opening 19 and an opening / closing door 18, and a heating flow path through which a heat medium flows is formed within the opening / closing door 18, and a corresponding heat medium flow path portion 100 can be connected to the opening / closing door 18.

[0088] Furthermore, the rear portion faces the front portion 13, and a rear opening (not shown) and a rear door (not shown) can be formed to allow access to the processing space for maintenance, etc. In this case, a heating flow path can also be formed in the rear door in the same manner as the front portion 13, and the heat medium flow path portion 100 can be connected to the rear door.

[0089] The gas injection unit 20 is provided on the first wall 11 of the walls of the process chamber 10 and is configured to inject a process gas into the processing space, and various configurations are possible.

[0090] That is, the gas injection section 20 is provided on the first wall 11 of the chamber body so that the processing space and an external gas supply device are connected to each other, and can inject the process gas supplied from the gas supply device into the processing space.

[0091] For example, the gas injection unit 20 may include a plurality of nozzles installed on the side of the process chamber 10 to communicate with the processing space, a main pipe 21 commonly connected to the plurality of nozzles, and a connection pipe 22 connected to the main pipe 21.

[0092] The gas exhaust unit 30 is provided in the second wall 12 of the walls of the process chamber 10 and is configured to exhaust gas from the processing space, and various configurations are possible.

[0093] That is, the gas exhaust section 30 is provided on the second wall of the chamber body, i.e., the surface facing the first wall 11, so that the processing space and an external gas exhaust device, i.e., an exhaust pump, are connected to each other, and can exhaust process gases and various by-products, etc., from within the processing space.

[0094] For example, the gas exhaust section 30 may include a plurality of ports provided in the second wall of the process chamber 10 to communicate with the processing space, a main exhaust pipe 31 commonly connected to the plurality of ports, and a connecting exhaust pipe 32 connected to the main exhaust pipe 31.

[0095] The support frame 40 has a structure in which the heat medium supply device 50 is disposed and which supports the process chamber 10, and various structures are possible.

[0096] That is, the support frame 40 is configured to support the process chamber 10, and forms a space below the process chamber 10, in which a heat transfer medium supply device 50, which will be described later, can be placed.

[0097] Meanwhile, in the substrate processing apparatus according to the present invention, as described above, various components such as the gas injection unit 20, the gas exhaust unit 30, and the opening / closing door 18 are arranged at various positions in the process chamber 10, and it is therefore necessary to independently adjust the temperature and flow rate of the heat medium according to each position on the wall of the process chamber 10.

[0098] More specifically, the first wall 11, which is provided with a gas injection section 20 through which a relatively low temperature process gas is continuously supplied, has a lower temperature than other locations, and the second wall 12, which is provided with a gas exhaust section 30, can be formed at a relatively high temperature.

[0099] Furthermore, the process gas at a relatively low temperature moves to the lower surface of the process chamber 10 within the processing space, and the process gas at a relatively high temperature moves to the upper surface 14 of the process chamber 10 within the processing space, and the upper surface 14 may be formed to have a relatively high temperature and the lower surface to have a relatively low temperature.

[0100] Therefore, it is necessary to individually adjust the temperature and flow rate of the heat transfer medium depending on each position in the process chamber 10.

[0101] For this purpose, the heat medium passage parts 100 may be configured to be connected to the walls of the process chamber 10 that are separated from each other and to supply the heat medium.

[0102] That is, the heat medium flow path section 100 may be configured to supply the heat medium supplied via the heat medium supply section 200 described below to the process chamber 10, and to discharge the heat medium from the process chamber 10 after heat exchange to the heat medium supply section 200 side.

[0103] For example, the heat medium flow path unit 100 may include a supply flow path 110 that transfers the heat medium supplied through the heat medium supply unit 200 to the wall of the process chamber 10, and a discharge flow path 120 that transfers the heat medium that has completed heat exchange from the wall of the process chamber 10 to the heat medium supply unit 200.

[0104] That is, the supply flow path 110 may be configured to be connected between the heat transfer medium supply unit 200 and the process chamber 10 to supply the heat transfer medium, or may be provided in multiple units, each installed in a wall that separates the process chamber 10 from the others.

[0105] In addition, the discharge flow path 120 is configured to discharge the heat medium that has completed heat exchange from the wall of the process chamber 10 to the heat medium supply unit 200, and like the supply flow path 110, it is provided in each of the walls that separate the process chamber 10, and multiple discharge flow paths 120 may be provided.

[0106] That is, when a hexahedral process chamber 10 is taken as an example, at least six heat transfer medium flow passage sections 100 may be provided corresponding to each wall, and a plurality of first wall sections 11 provided with gas injection sections 20 having a relatively high or low temperature and requiring high temperature control, and a plurality of second wall sections 12 provided with gas exhaust sections 30 may be provided.

[0107] That is, as shown in FIG. 2 , a plurality of heat medium passage sections 100 may be connected to each of the first wall 11 and the second wall 12, and a single heat medium passage section 100 may be connected to each of the remaining walls excluding the first wall 11 and the second wall 12. For the hexahedral process chamber 10, two heat medium passage sections 100 may be provided in each of the first wall 11 and the second wall 12, and one heat medium passage section 100 may be provided in each of the remaining walls, for a total of eight heat medium passage sections 100.

[0108] On the other hand, since the first wall 11 has a relatively low temperature and the second wall 12 has a relatively high temperature, the front surface 13, back surface, top surface 14 and bottom surface adjacent to the first wall 11 and the second wall 12 may also be affected by these, which may require appropriate temperature compensation.

[0109] For this purpose, a supply flow path 110 for supplying the heat medium before heat exchange can be arranged at a position adjacent to the first wall 11, which has a relatively low temperature, of the remaining heat medium flow path portions 100 excluding the heat medium flow path portions 100 connected to the first wall 11 and the second wall 12, and a discharge flow path 120 for discharging the heat medium that has undergone a certain level of heat exchange can be arranged at a position adjacent to the second wall 12, which has a relatively high temperature.

[0110] That is, the remaining heat medium flow path sections 100, excluding the heat medium flow path sections 100 connected to the first wall body 11 and the second wall body 12, may be arranged so that the supply flow path 110 is adjacent to the first wall body 11 side and the discharge flow path 120 is adjacent to the second wall body 12 side.

[0111] The heat medium supply unit 200 is configured to independently supply the heat medium to each of the heat medium passage units 100 by adjusting at least one of the flow rate and temperature of the heat medium, and may have various configurations.

[0112] That is, the heat medium supply unit 200 may be configured to adjust at least one of the flow rate and temperature of the heat medium and supply it independently to each of the plurality of heat medium flow path units 100, in response to the need for independent heat medium temperature control at each position on the wall of the process chamber 10 described above.

[0113] For example, the heat transfer medium supply unit 200 may supply the heat transfer medium so that the temperature rise of the first wall 11 due to the supply of the heat transfer medium is greater than the temperature rise of the remaining walls excluding the first wall 11, in order to compensate for the temperature of the first wall 11, which has a relatively low temperature, as the gas injection unit 20 is provided and a low-temperature process gas is supplied.

[0114] To this end, the heat medium supply unit 200 can supply a heat medium at a higher temperature to the first wall 11 among the walls of the process chamber 10 than the rest of the heat medium. More specifically, the heat medium discharged through the discharge flow path 120 of the heat medium flow path unit 100 corresponding to the first wall 11 can be set to maintain a temperature of 60°C, and the temperatures of the rest of the heat medium can be set to maintain a temperature lower than 60°C.

[0115] In addition, the heat medium supply unit 200 is provided with a gas exhaust unit 30, and as the high-temperature process gas heated according to the temperature of the processing space is exhausted, the heat medium can be supplied so that the temperature rise of the second wall 12 due to the supply of the heat medium is smaller than the temperature rise of the remaining walls excluding the second wall 12, in order to compensate for the temperature of the second wall 12, which has a relatively high temperature.

[0116] In particular, the heat medium supply unit 200 can supply a heat medium having a lower temperature to the second wall 12 than to the first wall 11, and more specifically, can be set so that the temperature of the heat medium discharged through the discharge flow path 120 of the heat medium flow path unit 100 corresponding to the second wall 12 is maintained at 50°C, and the temperatures of the remaining heat medium are set to be higher than 50°C.

[0117] Meanwhile, the heat transfer medium supply unit 200 can supply the heat transfer medium to the first wall 11 of the process chamber 10 at a flow rate greater than that to the remaining wall 11, so as to increase the total amount of heat exchange with the walls of the process chamber 10.

[0118] For example, the heat medium supply section 200 can supply the heat medium at a flow rate greater than the flow rate per unit time of the heat medium supplied to the remaining walls through the plurality of heat medium flow path sections 100 connected to the first wall 11.

[0119] As another example, the heat transfer medium supply unit 200 can supply the heat transfer medium so that the temperature rise of the upper surface 14 of the process chamber 10 due to the supply of the heat transfer medium is smaller than the temperature rise of the lower surface of the process chamber 10, taking into consideration the processing space in which a relatively high temperature process gas is adjacent to the upper surface 14 and a relatively low temperature process gas is adjacent to the lower surface.

[0120] For example, the heat medium supply unit 200 can supply a heat medium having a higher temperature to the lower surface of the process chamber 10 than to the upper surface 14 thereof.

[0121] Furthermore, the heat medium supply unit 200 can supply the heat medium to the lower surface of the process chamber 10 at a larger flow rate per unit time than to the upper surface 14 thereof.

[0122] On the other hand, as another example, a plurality of heat medium flow passage sections 100, that is, supply passages 110, can be connected to one wall of the process chamber 10, and each can supply a heat medium independently.

[0123] That is, an upper heat medium passage portion is connected to the upper side of one wall of the process chamber 10 to supply a heat medium, and a lower heat medium passage portion is connected to the lower side of the same wall to supply a heat medium.

[0124] At this time, the heat medium supplied through the upper heat medium flow path section can move through a heating flow path formed on the upper side of one wall of the process chamber 10, and the heat medium supplied through the lower heat medium flow path section can move through a heating flow path formed on the lower side of the same wall as the process chamber 10.

[0125] In this case, different temperature compensation may be required depending on whether a high temperature process gas is located at the upper side or a relatively low temperature process gas is located at the lower side in the processing space.

[0126] To this end, the heat transfer medium supply unit 200 can supply the heat transfer medium such that the temperature rise of the upper side of the wall of the process chamber 10 due to the heat transfer medium supply through the lower heat transfer medium flow path unit is greater than the temperature rise of the lower side of the wall of the process chamber 10 due to the heat transfer medium supply through the upper heat transfer medium flow path unit.

[0127] More specifically, the heat medium supplying unit 200 may supply the heat medium to the lower heat medium passage portion at a temperature higher than that of the upper heat medium passage portion, and may supply the heat medium at different flow rates as needed.

[0128] In addition, the heat medium supplying unit 200 can adjust at least one of the flow rate and temperature of the heat medium so that the temperature of the inner wall of the process chamber 10 is maintained at 60°C or more and less than 300°C.

[0129] This allows the temperature of the inner wall of the process chamber 10 to be maintained within a range of 60°C or higher and lower than 300°C, preventing condensation of various by-products on the inner wall of the process chamber 10 while also preventing deformation of the wall of the process chamber 10.

[0130] In this case, the heat medium supplying unit 200 can adjust the temperature of the inner wall of the process chamber 10 by supplying a heat medium so that the temperature of the inner wall of the process chamber 10 is lower than the temperature of the processing space.

[0131] More specifically, if the temperature of the inner wall of the process chamber 10 is below 60°C, the process gas and by-products will condense on the inner wall, generating a large amount of particles. If the temperature of the inner wall of the process chamber 10 exceeds 300°C, the wall of the process chamber 10 will be deformed. Therefore, the temperature of the inner wall of the process chamber 10 must be maintained within a range of 60°C or higher and lower than 300°C.

[0132] In addition, the heat medium supply unit 200 adjusts the temperature of the inner wall of the process chamber 10 by increasing the flow rate and temperature of the heat medium when the temperature of the processing space is 250°C or less, and adjusts the temperature of the inner wall of the process chamber 10 by increasing the flow rate and temperature of the heat medium when the temperature of the processing space exceeds 250°C.

[0133] More specifically, the power of the heat medium heating unit 300 described below is adjusted to increase the temperature of the heat medium. At this time, since lower power is more advantageous, the temperature of the processing space exceeds 250°C and the inner wall of the process chamber 10 can be maintained at a relatively high temperature. By using the temperature of the processing space, the power can be reduced to decrease the temperature of the heat medium, and the flow rate can be increased to adjust the temperature of the inner wall of the process chamber 10.

[0134] At this time, it is of course possible to adjust the temperature of the inner wall of the process chamber 10 by increasing the power and raising the temperature of the heat medium together with the flow rate.

[0135] On the other hand, when the temperature of the processing space is below 250°C, the temperature of the inner wall of the process chamber 10 is relatively low, so the power for heating the heat medium can be increased and the flow rate can also be increased to adjust the temperature of the inner wall of the process chamber 10.

[0136] Meanwhile, the heat medium supply unit 200 does not circulate and resupply the supplied heat medium, but supplies and discharges the heat medium from the outside. For example, the heat medium supply unit 200 may include a heat medium supply line 210 that transfers the heat medium from the outside and independently transfers the heat medium to each of the heat medium flow path units 100, and a heat medium discharge line 220 that transfers the heat medium from the heat medium flow path units 100 and discharges it to the outside.

[0137] That is, the heat medium supply unit 200 may receive a heat medium from an external heat medium supply source, heat the heat medium at an appropriate flow rate and temperature, and independently supply the heat medium to each heat medium flow path unit 100. To this end, the heat medium supply unit 200 may include a heat medium supply line 210 through which the heat medium is delivered from the outside, and a heat medium discharge line 220 connected to each discharge path 120 of the heat medium flow path unit 100 and discharging the heat medium to the outside.

[0138] In this case, the heat medium supply line 210 and the heat medium discharge line 220 may be connected so that a plurality of supply flow paths 110 and a plurality of discharge flow paths 120 branch off from each other.

[0139] Hereinafter, a heat medium supplying device for supplying a heat medium to the above-mentioned substrate processing apparatus will be described in detail with reference to the accompanying drawings.

[0140] Meanwhile, in the following, the same configuration as that described above will not be described again, and therefore the same contents as those described above can be applied in the same manner.

[0141] As shown in FIG. 3, the heat medium supplying device according to the present invention includes a plurality of heat medium flow passage sections 100, each connected to a wall of the process chamber 10, which is partitioned from one another, for supplying the heat medium, and a plurality of heat medium heating sections 300, which form part of the heat medium flow passage sections 100 and independently heat the heat medium supplied through the heat medium flow passage sections 100.

[0142] In addition, the heat medium supplying device according to the present invention may further include a flow rate adjusting unit 400 provided in each heat medium passage unit 100 to independently adjust the flow rate of the heat medium.

[0143] The heat medium supplying device according to the present invention may further include a bypass line 600 that communicates with the flow path S in the heat medium heating unit 300 to bypass the supplied heat medium.

[0144] The heat medium flow passage unit 100 is connected to each of the partitioned walls of the process chamber 10 to supply the heat medium, and a plurality of heat medium flow passage units 100 may be provided corresponding to each wall.

[0145] The heat medium heating section 300 forms a part of the heat medium passage section 100, and is configured to independently heat the heat medium supplied via the heat medium passage section 100, and various configurations are possible.

[0146] In this case, the heat medium heating unit 300 is configured to form a part of the heat medium flow path unit 100, and a plurality of the heat medium heating units 300 may be provided corresponding to a plurality of the heat medium flow path units 100.

[0147] For example, the heat medium heating unit 300 may include a heating flow path unit 500 having a flow path S through which the heat medium flows, and a heater 310 installed in the heating flow path unit 500 to heat the heat medium.

[0148] In addition, the heat medium heating unit 300 may further include a flow velocity reducing member 320 installed in the flow path S to reduce the flow velocity of the heat medium.

[0149] In addition, the heat medium heating unit 300 may further include a temperature sensor 330 for measuring the temperature of the flow path S.

[0150] The heating flow path unit 500 has a structure in which a flow path S through which a heat medium flows is formed, and various structures are possible.

[0151] That is, the heating flow path portion 500 may have a flow path S formed therein to form a part of the heat medium transmission path formed through the heat medium flow path portion 100, and may guide the movement of the heat medium so that the heat from the heater 310 may be transmitted to the heat medium.

[0152] At this time, the heating flow path unit 500 may be formed such that the flow path S is longer than the linear length of the heat medium heating unit 300 so as to increase the heat transfer time and heat exchange area from the heater 310 to the heat medium.

[0153] For example, the heating flow path portion 500 may have a flow path S formed in a spiral shape in the longitudinal direction, or as another example, the flow path S may be formed to guide the heat medium to move multiple times between one end and the other end.

[0154] As an example, as shown in FIG. 4, the heating flow path portion 500 may include a first flow path member 510 and a second flow path member 520 that are coupled to each other to form a portion of the flow path S therein, and a cover member 530 that is provided to enclose the outer surface of the first flow path member 510 and forms the remaining portion of the flow path S between the cover member 530 and the outer surface of the first flow path member 510.

[0155] The first flow path member 510 has a configuration in which the second flow path member 520 is inserted therein to form a second internal flow path S2 between the first flow path member 510 and the second flow path member 520, and various configurations are possible.

[0156] That is, the first flow path member 510 is configured so that at least a portion of the second flow path member 520 described below is inserted thereinto to form a second internal flow path S2 between the first flow path member 510 and the second flow path member 520, and may have an outlet 511a formed at the other end through which the heat medium is discharged, and an insertion port 512a formed at one end through which the second flow path member 520 is inserted.

[0157] For example, the first flow path member 510 may include a first flange 511 having an outlet 511a formed at the other end through which the heat transfer medium is discharged, and a first extension pipe portion 512 extending from the first flange 511 toward one end, having an insertion port 512a formed at one end, and into which at least a portion of the second flow path member 520 is inserted.

[0158] The first flange 511 may have a discharge port 511a formed at the other end thereof for discharging the heat medium, and may be configured to be connected to the heat medium channel portion 100 described above.

[0159] In this case, the outlet 511a can be formed to communicate with the heat medium flow path portion 100 connected to the first flange 511, and can be formed to communicate with the second communication hole 512b described later and with the third internal flow path S3 formed between the cover portion 530 and the first flow path member 510.

[0160] At this time, as shown in FIG. 5, as the first extension pipe portion 512 is blocked from the first flange 511, the outlet 511a can be separated from the second internal flow path S2 and the first internal flow path S1 formed by inserting the second flow path member 520 into the first extension pipe portion 512 without being directly connected to them.

[0161] The first extension pipe portion 512 may extend from the first flange 511 to one end side, have an insertion opening 512a formed at one end, and be configured so that at least a portion of the second extension pipe portion 522 of the second flow path member 520 described later can be inserted therein.

[0162] At this time, as at least a portion of the second flow path member 520 is inserted into the first extension pipe portion 512, a second internal flow path S2 may be formed between the first extension pipe portion 512 and the second flow path member 520. At this time, the second internal flow path S2 may be connected to a first internal flow path S1 and a third internal flow path S3, which will be described later, thereby increasing the total length of the flow path S of the heat medium and increasing the heat exchange contact area and time of the heat medium.

[0163] In this case, the first extension pipe portion 512 may have a plurality of second communication holes 512b formed on the outer peripheral surface of the other end side, i.e., the outer peripheral surface at a position adjacent to the first flange 511, to communicate with the discharge port 511a. As a result, the heat medium that has passed through the flow path S can be guided to move to the heat medium flow path portion 100 via the discharge port 511a by communicating the discharge port 511a with a third internal flow path S3 described below.

[0164] Meanwhile, the first extension pipe portion 512 is formed with its interior separated from the discharge port 511a formed in the first flange 511, so that the heat transfer medium moving through the first internal flow path S1 via the second flow path member 520 cannot immediately move to the discharge port 511a side, but can be guided to move to the discharge port 511a via the second internal flow path S2 and the third internal flow path S3.

[0165] The second flow path member 520 is configured such that at least a portion thereof is inserted into the first flow path member 520 to form a first internal flow path S1 therein, and various configurations are possible.

[0166] That is, the second flow path member 520 may be configured to have a first internal flow path S1 formed therein, and to be at least partially inserted into the first flow path member 510 through the insertion port 512a, so as to form a second internal flow path S2 communicating with the first internal flow path S1 between its outer surface and the inner surface of the first flow path member 510.

[0167] For example, the second flow path member 520 may include a second flange 521 having an inlet 521a for introducing a heat medium at one end thereof, and a second extension pipe portion 522 extending from the second flange 521 to the other end thereof, having a first internal flow path S1 formed therein, and at least a portion of which is inserted into the first flow path member 510.

[0168] The second flange 521 has an inlet 521a formed at one end for introducing a heat medium, and is connected to the heat medium flow path section 100, so that the heat medium can be introduced into the flow path S through the inlet 521a.

[0169] The second extension pipe portion 522 may be formed to extend from the second flange 521 toward the first flow path member 510, and may have a first internal flow path S1 formed therein that communicates with the inlet 521a and through which the heat medium moves.

[0170] At this time, at least a portion of the second extension pipe portion 522 can be inserted into the first extension pipe portion 512 through the insertion port 512a, thereby forming a second internal flow path S2 between the second extension pipe portion 522 and the first extension pipe portion 510.

[0171] Therefore, the heat medium introduced through the inlet 521a can move along the first internal flow path S1, and then move along the second internal flow path S2 via the first communication hole 522a described below.

[0172] Meanwhile, as shown in FIG. 5, the second extension pipe portion 522 may have a closed structure in which the end on the first flow path member 510 side is closed, or as another example, it may have an open structure and be closed by contacting the inside of the first extension pipe portion 512. In this case, a plurality of first communication holes 522a may be formed on the outer circumferential surface on the other end side to connect the first internal flow path S1 and the second internal flow path S2.

[0173] As another example, the second extension pipe portion 522 has a structure in which the first communication hole 522a is omitted and the end on the first flow path member 510 side is open, and by maintaining an open state inside the first extension pipe portion 512, the second internal flow path S2 and the first internal flow path S1 can be made to communicate with each other.

[0174] The cover member 530 is configured to enclose the outer surface of the first flow path member 510 and form a third internal flow path S3 communicating with the second internal flow path S2 between it and the outer surface of the first flow path member 510, and various configurations are possible.

[0175] That is, the cover member 530 may be configured to be arranged between the first flange 511 and the second flange 521 to enclose the outer surface of the first flow path member 510, and to form a third internal flow path S3 between the cover member 530 and the outer surface of the first flow path member 510.

[0176] In this case, as shown in FIG. 5, the third internal flow path S3 can be connected to the second internal flow path S2 since the end of the first extension pipe portion 512 is positioned at a certain distance from the second flange 521. As another example, a separate third communication hole can be formed on the outer peripheral surface of the end of the first extension pipe portion 512 on the second flange 521 side.

[0177] Meanwhile, the movement of the heat medium through the heating flow path portion 500 will be explained as follows.

[0178] As shown in FIGS. 4 and 5, when a heat medium is introduced through an inlet 521a, the heating flow path section 500 moves along a first internal flow path S1 formed inside the second extension pipe section 522 toward the first flow path member 510, then moves through a first communication hole 522a toward the second flow path member 520 along a second internal flow path S2, and then moves to a third internal flow path S3 through a gap between the end of the first extension pipe section 512 and the second flange 521.

[0179] The gas moves again along the third internal flow path S3 toward the first flow path member 510, passes through the second communication hole 512b, and can be discharged from the heating flow path section 500 through the discharge port 511a, and in this process can be heated by heat exchange with the heater 310 described below.

[0180] The heater 310 is provided in the heating flow path section 500 and is configured to heat the heat medium, and various configurations are possible.

[0181] For example, the heater 310 may be provided in multiple units on the outer surface of the first flow path member 510, and more specifically, may be provided in multiple units in the third internal flow path S3 between the outer surface of the first flow path member 510 and the cover member 530, having a length in the longitudinal direction of the heating flow path section 500.

[0182] That is, the heater 310 may be provided in the flow path S and exposed to the heat medium, thereby performing indirect heat exchange when the heat medium moves through the first internal flow path S1 and the second internal flow path S2, and performing direct heat exchange when the heat medium moves through the third internal flow path S3.

[0183] Meanwhile, the heater 310 may be provided in a flow velocity reduction member 320 (to be described later) in the third internal flow path S3.

[0184] The flow velocity reduction member 320 is provided in the flow path S to reduce the flow velocity of the heat medium. In particular, the flow velocity reduction member 320 is provided in the flow path S to reduce the flow velocity of the heat medium through physical interference with the heat medium, thereby increasing the heat exchange time with the heater 310 and improving thermal efficiency.

[0185] More specifically, the flow velocity reduction member 320 may include a first flow velocity reduction member 321 formed by protruding radially along the outer peripheral surface of the first extension pipe portion 512, and a second flow velocity reduction member 322 formed by protruding radially along the outer peripheral surface of the second extension pipe portion 522.

[0186] The first flow velocity reduction member 321 is configured to protrude radially along the outer circumferential surface of the first extension pipe portion 512, and may be provided in multiple pieces at intervals along the longitudinal direction of the first extension pipe portion 512.

[0187] In this case, it goes without saying that the plurality of first flow velocity reduction members 321 may be arranged at equal intervals or at different intervals.

[0188] Meanwhile, the first flow velocity reduction member 321 is configured to be protruded in the radial direction of the first extension pipe portion 512, and may have a corresponding groove formed therein so that the heater 310 can be placed thereon.

[0189] The second flow velocity reduction member 322 is configured to protrude radially along the outer circumferential surface of the second extension pipe portion 522, and may be provided in multiple pieces at intervals along the longitudinal direction of the second extension pipe portion 522.

[0190] 6, the second flow velocity reduction members 322 may be arranged at equal intervals or at different intervals. As shown in FIG. 6, the second flow velocity reduction members 322 are formed up to a position adjacent to the inner circumferential surface of the first extension pipe portion 512, thereby minimizing the area through which the heat medium passes and thereby reducing the flow velocity of the heat medium.

[0191] The temperature sensor 330 is configured to measure the temperature of the flow path S, and various configurations are possible.

[0192] At this time, the temperature sensor 330 is installed through the outer peripheral surface of the cover member 530 and can measure the temperature of the internal flow path S3, thereby measuring the heat medium supply temperature for precise temperature control of the heat medium.

[0193] The flow rate adjusting units 400 are provided in the heat medium passage units 100, respectively, and are configured to adjust the flow rate of the heat medium independently, and various configurations are possible.

[0194] For example, the flow rate control unit 400 is provided in each of the heat medium passage units 100 branched from the heat medium supply line 210, and can supply or block the heat medium by opening or closing the heat medium passage unit 100, and can further control the supply flow rate of the heat medium by adjusting the degree of opening.

[0195] In this case, the flow rate control unit 400 is disposed at the rear end of the heat transfer medium heating unit 300 based on the process chamber 10, i.e., on the opposite side of the heat transfer medium heating unit 300 from the process chamber 10, and can deliver the heat transfer medium with a controlled flow rate to the heat transfer medium heating unit 300 side.

[0196] Therefore, the flow rate control unit 400 can minimize damage and improve durability by preventing the heated heat medium from being exposed.

[0197] The bypass line 600 is configured to bypass the heat medium supplied by communicating with the flow path S in the heat medium heating unit 300, and various configurations are possible.

[0198] For example, the bypass line 600 may include a plurality of branch bypass lines 610 each connected to a plurality of heat medium heating units 300 and each having a shutoff valve and a flow control valve, and a main bypass line 620 to which the plurality of branch bypass lines 610 are connected.

[0199] That is, the bypass line 600 is connected to the heat medium heating unit 300, particularly the cover member 530, and may have a branch bypass line 610 formed therein to communicate with the third internal flow path S3. The bypass line 600 may include a main bypass line 620 to which a plurality of branch bypass lines 610 are connected, and may discharge the heat medium transferred by bypassing through the branch bypass line 610.

[0200] Meanwhile, the branch bypass line 610 may be provided with a separate shutoff valve or a flow control valve to adjust whether or not the heat medium is bypassed and the bypass flow rate, thereby enabling precise flow rate control of the heat medium transferred to the heat medium flow path portion 100.

[0201] The above is merely a description of some of the preferred embodiments that can be implemented by the present invention, and as is well known, the scope of the present invention should not be interpreted as being limited to the above-mentioned embodiments, and the technical ideas of the present invention described above and the technical ideas underlying them are all included in the scope of the present invention. [Explanation of symbols]

[0202] 100 heat medium flow path section 300 Heat medium heating section 400 Flow control section

Claims

1. A heat medium supply device for supplying a heat medium to a process chamber in which a processing space for substrate processing is formed, a plurality of heat medium flow passage portions connected to walls of the process chamber that are separated from each other and supply the heat medium; a plurality of heat medium heating units that form a part of the heat medium flow path unit and that independently heat the heat medium supplied through the heat medium flow path unit so that each heat medium supplied through the heat medium flow path unit is supplied to each wall body in an independently heated state; A heat transfer medium supply device comprising:

2. 2. The heat medium supply device according to claim 1, further comprising a heat medium supply line that is branched and connected to the plurality of heat medium flow path portions and that transfers the heat medium from an outside to the plurality of heat medium flow path portions.

3. The heat medium heating unit includes:

2. The heat medium supply device according to claim 1, further comprising: a heating flow path section in which a flow path through which the heat medium flows is formed; and a heater provided in the heating flow path section to heat the heat medium.

4. The heating flow path section is 4. The heating medium supply device according to claim 3, wherein the flow path is formed in a spiral shape relative to the longitudinal direction.

5. The heating flow path section is 4. The heat transfer medium supply device according to claim 3, wherein the flow path is formed so as to induce a plurality of movements of the heat transfer medium between one end and the other end.

6. The heating flow path section is 4. The heat medium supply device according to claim 3, comprising: a first flow path member having an outlet formed at one end through which the heat medium is discharged and an insertion opening formed at the other end; and a second flow path member having a first internal flow path, at least a portion of which is inserted into the first flow path member through the insertion opening, and which forms a second internal flow path between an outer surface of the first flow path member and an inner surface of the first flow path member, the second internal flow path communicating with the first internal flow path.

7. The heating flow path section is 7. The heat medium supply device according to claim 6, further comprising a cover member provided to enclose an outer surface of the first flow path member and defining a third internal flow path communicating with the second internal flow path between the cover member and the outer surface of the first flow path member.

8. The second flow path member is 7. The heat medium supply device according to claim 6, further comprising: a second flange having an inlet formed at one end thereof for introducing the heat medium; and a second extension pipe portion extending from the second flange to the other end thereof, having the first internal flow path formed therein, and at least a portion of the second extension pipe portion inserted into the first flow path member.

9. The first flow path member is 7. The heat medium supply device according to claim 6, further comprising: a first flange having an outlet formed at the other end thereof through which the heat medium is discharged; and a first extension pipe portion extending from the first flange toward one end thereof, having the insertion opening formed at one end thereof, and into which at least a portion of the second flow path member is inserted.

10. The heater is The heat medium supply device according to claim 6, wherein a plurality of the first flow path members are provided on the outer surface of the first flow path member.

11. The heater is The heating medium supply device according to claim 3, wherein the heating medium supply device is provided in the flow path.

12. The heat medium heating unit includes: The heat medium supply device according to claim 3 , further comprising a flow velocity reducing member provided in the flow path to reduce the flow velocity of the heat medium.

13. The heat medium supply device according to claim 1 , further comprising flow rate adjusting units provided in the heat medium flow passage units, each adjusting a flow rate of the heat medium independently.

14. The flow rate adjusting unit is 14. The heat medium supplying device according to claim 13, wherein the heat medium supplying device is disposed on an opposite side of the heat medium heating unit to the process chamber, and transfers the heat medium to the heat medium heating unit side.

15. The heat medium supply device according to claim 3 , further comprising a bypass line communicating with the flow path in the heat medium heating section and bypassing the supplied heat medium.

16. a process chamber in which a processing space for substrate processing is formed; a plurality of heat medium flow passages connected to walls of the process chamber that are separated from each other and supply a heat medium; a heat medium supply unit that adjusts the temperature of the heat medium and supplies the heat medium to each of the heat medium flow path units independently of each other, so that the heat medium supplied through the heat medium flow path units is supplied to each wall body in an adjusted temperature state.

17. 17. The substrate processing apparatus of claim 16, further comprising: a gas injection unit provided on a first wall of the process chamber and configured to inject a process gas into the processing space; and a gas exhaust unit provided on a second wall of the process chamber and configured to exhaust the processing space.

18. The heat medium supply unit 18. The substrate processing apparatus according to claim 17, wherein the heat medium is supplied so that a temperature rise of the first wall body due to the supply of the heat medium is larger than a temperature rise of the remaining walls excluding the first wall body.

19. The heat medium supply unit 18. The substrate processing apparatus according to claim 17, wherein the heat medium is supplied so that a temperature rise of the second wall body due to the supply of the heat medium is smaller than a temperature rise of the remaining walls excluding the second wall body.

20. the process chamber is a hexahedron; The heat medium flow path portion is 18. The substrate processing apparatus of claim 17, wherein a plurality of the first wall and the second wall are connected to each other, and a single wall is connected to each of the remaining walls except for the first wall and the second wall.

21. The heat medium flow path portion is an upper heat transfer medium channel portion connected to an upper side of one wall of the process chamber; and a lower heat transfer medium channel portion connected to a lower side of the same wall as the upper heat transfer medium channel portion, The heat medium supply unit 17. The substrate processing apparatus of claim 16, wherein the heat medium is supplied such that a temperature rise on an upper side of the wall of the process chamber due to the supply of the heat medium through the lower heat medium flow path section is greater than a temperature rise on a lower side of the wall of the process chamber due to the supply of the heat medium through the upper heat medium flow path section.

22. The heat medium supply unit 17. The substrate processing apparatus according to claim 16, wherein the heat medium is supplied so that a temperature rise in the upper surface of the process chamber due to the supply of the heat medium is smaller than a temperature rise in the lower surface of the process chamber.

23. The heat medium flow path portion is a supply flow path that transfers the heat medium supplied via the heat medium supply unit to a wall of the process chamber, and a discharge flow path that transfers the heat medium that has completed heat exchange from the wall of the process chamber to the heat medium supply unit, The remaining heat medium flow path portions excluding the heat medium flow path portions connected to the first wall body and the second wall body are 18. The substrate processing apparatus according to claim 17, wherein the supply flow path is provided adjacent to the first wall, and the discharge flow path is provided adjacent to the second wall.

24. The heat medium supply unit 17. The substrate processing apparatus according to claim 16, further comprising: a heat medium supply line through which the heat medium is transferred from the outside and which independently transfers the heat medium to each of the heat medium flow path portions; and a heat medium discharge line through which the heat medium is transferred from the heat medium flow path portions and which discharges the heat medium to the outside.

25. The heat medium supply unit 17. The substrate processing apparatus according to claim 16, wherein the heat medium is supplied so that the temperature of the inner wall of the process chamber becomes lower than the temperature of the processing space.

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