Temperature sensor and plasma processing apparatus

Abstract

To provide a technique which allows for reducing high-frequency noise generated when generating plasma.SOLUTION: A temperature sensor according to an embodiment of the present disclosure is for measuring temperature inside a treatment vessel used for plasma treatment, and comprises thermocouples having temperature measurement contact points inside the treatment vessel, a protective tube for housing and protecting the thermocouples, and an electromagnetic shield provided to cover the thermocouples inside the protective tube.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a temperature sensor and a plasma processing apparatus. [Background technology]

[0002] In a known plasma processing apparatus, a noise reduction filter is connected to a compensation lead wire connected to a thermocouple that detects the temperature inside a reaction tube, and a shielding member is incorporated to cover the compensation lead wire (see, for example, Patent Document 1). In this technique, the noise reduction filter and the shielding member are provided outside the reaction tube. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2011-151081 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique capable of reducing high-frequency noise generated during plasma generation. [Means for solving the problem]

[0005] A temperature sensor according to one aspect of the present disclosure is a temperature sensor for measuring a temperature inside a processing vessel where plasma processing is performed, the temperature sensor including: a thermocouple having a temperature measuring junction inside the processing vessel; a protective tube that houses and protects the thermocouple; an electromagnetic shield that is provided inside the protective tube to cover the thermocouple; and an insulating member that is provided between the thermocouple and the electromagnetic shield, wherein the protective tube has one end located inside the processing vessel and the other end located outside the processing vessel, and has an L-shape that penetrates a sidewall of the processing vessel and is bent upwardly of the processing vessel. death , The electromagnetic shield is made of a metal mesh. . [Effects of the Invention]

[0006] According to the present disclosure, high-frequency noise generated during plasma generation can be reduced. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a schematic diagram illustrating an example of a plasma processing apparatus according to an embodiment; [Figure 2] Arrow II-II view of Figure 1 [Figure 3] A diagram showing an example of an internal temperature sensor [Figure 4] IV-IV arrow view of Figure 3 [Figure 5] A diagram for explaining the wire diameter and mesh opening of a metal mesh [Figure 6] Figure showing the measurement results of the shielding effect of metal mesh [Figure 7] A diagram showing an example of temperature sensor output fluctuation due to high-frequency noise DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding reference numerals are used to designate the same or corresponding members or components, and redundant descriptions will be omitted.

[0009] [Plasma Processing Apparatus] An example of a plasma processing apparatus according to an embodiment will be described with reference to Figures 1 and 2. Figure 1 is a schematic view showing an example of a plasma processing apparatus according to an embodiment. Figure 2 is a view taken along the line II-II in Figure 1.

[0010] The plasma processing apparatus 1 includes a processing chamber 10, a gas supply unit 20, a plasma generation unit 30, an exhaust unit 40, a heating unit 50, an external temperature sensor 60, an internal temperature sensor 70, and a control unit 90.

[0011] The processing vessel 10 has a vertical cylindrical shape with a ceiling and an open bottom end. The entire processing vessel 10 is made of, for example, quartz. A cylindrical metal manifold 11 is connected to the opening at the bottom end of the processing vessel 10 via a sealing member (not shown).

[0012] Manifold 11 supports the lower end of processing vessel 10, and boat 12 carrying a large number of substrates W (e.g., 25 to 150 substrates W) stacked in multiple stages is inserted into processing vessel 10 from below manifold 11. In this manner, a large number of substrates W are accommodated substantially horizontally in processing vessel 10 with spacing therebetween in the vertical direction. The substrates W are, for example, semiconductor wafers.

[0013] The boat 12 is made of, for example, quartz. The boat 12 has three support columns 12a, and grooves (not shown) formed in the support columns 12a support a large number of substrates W. The boat 12 is supported on a rotation shaft 14 via a heat-insulating cylinder 13.

[0014] The heat-retaining cylinder 13 is made of, for example, quartz and serves to suppress heat radiation from the opening at the bottom of the processing chamber 10.

[0015] The rotating shaft 14 passes through the lid 15. A magnetic fluid seal (not shown) is provided at the passing portion of the rotating shaft 14 to hermetically seal the rotating shaft 14 and rotatably support it. The rotating shaft 14 is attached to the tip of an arm supported by an elevator mechanism (not shown) such as a boat elevator, and the boat 12 and the lid 15 move up and down as a unit and are inserted into and removed from the processing vessel 10.

[0016] The lid 15 is made of, for example, metal. The lid 15 opens and closes the opening at the lower end of the manifold 11. A seal member (not shown) for maintaining airtightness inside the processing vessel 10 is provided between the periphery of the lid 15 and the lower end of the manifold 11.

[0017] The exhaust port 16 is provided at the bottom of the sidewall of the processing vessel 10 opposite the gas nozzle 21 , and the inside of the processing vessel 10 is evacuated via the exhaust port 16 .

[0018] The gas supply unit 20 supplies various gases into the processing chamber 10. The gas supply unit 20 has, for example, two gas nozzles 21 and 22. However, the gas supply unit 20 may have another gas nozzle in addition to the two gas nozzles 21 and 22.

[0019] The gas nozzle 21 is made of, for example, quartz and has an L-shape that penetrates the sidewall of the manifold 11 inward, bends upward, and extends vertically. The vertical portion of the gas nozzle 21 is disposed within the processing vessel 10. The gas nozzle 21 is connected to a supply source 26 of dichlorosilane (DCS; SiH2Cl2) gas. The vertical portion of the gas nozzle 21 has a number of gas holes 21h formed at intervals along a length in the vertical direction corresponding to the wafer support range of the boat 12. Each gas hole 21h is oriented toward, for example, the center C of the processing vessel 10 and discharges DCS gas horizontally toward the center C of the processing vessel 10. However, each gas hole 21h may be oriented in a different direction, for example, at an angle relative to the direction toward the center C of the processing vessel 10, or may be oriented toward the inner wall near the processing vessel 10.

[0020] The gas nozzle 22 is made of, for example, quartz and has an L-shape that is bent upward below the plasma compartment wall 34, penetrates the lower part of the plasma compartment wall 34 inward, and extends vertically upward. The vertical portion of the gas nozzle 22 is provided in the plasma generation space P. The gas nozzle 22 is connected to a supply source 27 of ammonia (NH3) gas. The vertical portion of the gas nozzle 22 has a number of gas holes 22h formed at intervals along the vertical length corresponding to the wafer support range of the boat 12. Each gas hole 22h is oriented toward, for example, the center C of the processing vessel 10 and discharges ammonia gas horizontally toward the center C of the processing vessel 10. However, each gas hole 22h may be oriented in another direction, for example, at an angle relative to the direction toward the center C of the processing vessel 10.

[0021] The gas nozzles 21 and 22 are also connected to a purge gas supply source (not shown), and discharge a purge gas into the processing chamber 10 from the gas holes 21h and 22h. The purge gas may be an inert gas such as argon (Ar) gas or nitrogen (N2) gas. The gas nozzle 21 may also be connected to a supply source of other plasma generating gases, such as hydrogen (H2) gas or chlorine (Cl2) gas. The gas nozzle 22 may also be connected to a supply source of other source gases, such as a silicon source gas other than DCS gas or a metal-containing gas.

[0022] The plasma generating unit 30 is formed on a part of the sidewall of the processing vessel 10. The plasma generating unit 30 generates activated species by converting ammonia gas supplied from the gas nozzle 22 into plasma. The plasma generating unit 30 includes an RF power supply 31, a matching circuit 32, a plasma partition wall 34, a plasma electrode 35, an insulating protective cover 37, and a power supply line 38.

[0023] The RF power supply 31 is connected to the lower end of the plasma electrode 35 via a power supply line 38, and applies RF power of a predetermined frequency to the plasma electrode 35. The predetermined frequency may be, for example, 13.56 MHz, 27.12 MHz, or 40.68 MHz.

[0024] The matching circuit 32 is provided on the power supply line 38 between the RF power supply 31 and the plasma electrode 35. The matching circuit 32 controls the impedance on the plasma side as viewed from the RF power supply 31 side. The matching circuit 32 includes a coil and a capacitor (variable capacitor), and achieves matching by adjusting the capacitance of the variable capacitor so that the power of the reflected wave is minimized. The matching circuit 32 may be, for example, an L-type matching circuit or a π-type matching circuit.

[0025] The plasma compartment wall 34 is airtightly welded to the outer wall of the processing vessel 10. The plasma compartment wall 34 is made of, for example, quartz. The plasma compartment wall 34 has a concave cross section and covers an opening 17 formed in the side wall of the processing vessel 10. The opening 17 is elongated in the vertical direction so as to cover all of the substrates W supported by the boat 12 in the vertical direction. A gas nozzle 22 is provided in an inner space defined by the plasma compartment wall 34 and communicating with the inside of the processing vessel 10, i.e., a plasma generation space P, for discharging ammonia gas, which is a plasma generation gas.

[0026] The plasma electrode 35 includes a pair of electrodes 35a and 35b. Each of the pair of electrodes 35a and 35b has a long, narrow plate shape with its longitudinal direction extending in the vertical direction. The pair of electrodes 35a and 35b are arranged on the outer surfaces of both sides of the plasma compartment wall 34, facing each other with the plasma compartment wall 34 in between. A power feed line 38 is connected to the lower end of each of the electrodes 35a and 35b, and RF power from the RF power supply 31 is applied via a matching circuit 32.

[0027] The insulating protective cover 37 is attached to the outside of the plasma compartment wall 34 so as to cover the plasma electrode 35. The insulating protective cover 37 is made of an insulator such as quartz.

[0028] The power supply line 38 electrically connects the RF power supply 31 and the plasma electrode 35 .

[0029] The exhaust unit 40 evacuates the processing vessel 10 via the exhaust port 16. The exhaust unit 40 includes an exhaust pipe 41 and an exhaust device 42. The exhaust pipe 41 is connected to the exhaust port 16. The exhaust device 42 includes a pressure control valve, a vacuum pump, etc.

[0030] The heating unit 50 heats the substrate W accommodated in the processing vessel 10. The heating unit 50 includes a heater chamber 51 and a heater wire 52. The heater chamber 51 has a cylindrical shape with a ceiling and is provided so as to surround the outer periphery of the processing vessel 10. The heater wire 52 is provided in a spiral shape on the inner surface of the heater chamber 51.

[0031] The external temperature sensor 60 is a temperature sensor that measures the temperature outside the processing vessel 10. The external temperature sensor 60 has five sets of thermocouples 61 and five insertion tubes 62. The five sets of thermocouples 61 and the five insertion tubes 62 are installed at intervals in the vertical direction of the processing vessel 10.

[0032] Each thermocouple 61 has a temperature measuring junction 61 a at its tip, which is provided outside the processing vessel 10 and in the heater chamber 51 , and the other end thereof is passed through an insertion pipe 62 and drawn out of the heater chamber 51 .

[0033] Each of the insertion tubes 62 is provided substantially horizontally, penetrating the side wall of the heater chamber 51. A thermocouple 61 is inserted inside each of the insertion tubes 62 to protect it. Each of the insertion tubes 62 is made of, for example, quartz.

[0034] The internal temperature sensor 70 is a temperature sensor that measures the temperature inside the processing chamber 10 where plasma processing is performed. The internal temperature sensor 70 will be described in detail later.

[0035] The control unit 90 controls each part of the plasma processing apparatus 1. The control unit 90 may be, for example, a computer. Furthermore, a computer program that controls the operation of each part of the plasma processing apparatus 1 is stored in a storage medium. The storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

[0036] [Internal temperature sensor] An example of the internal temperature sensor 70 will be described with reference to Figures 1 to 7. Figure 3 is a diagram showing an example of the internal temperature sensor 70. Figure 4 is a view taken along the line IV-IV in Figure 3. For ease of explanation, in Figures 1 and 2, two thermocouples 71 making up one set are shown by a single solid line.

[0037] The internal temperature sensor 70 measures the temperature inside the processing vessel 10. The internal temperature sensor 70 includes five sets of thermocouples 71, five insulating members 72, a protective tube 73, a metal mesh 74, a line shield 75, an intermediate terminal block 76, a noise filter 77, a temperature controller 78, and a compensation lead wire 79.

[0038] The five sets of thermocouples 71 each have a temperature measuring junction 71a, which is the tip thereof, located inside the processing vessel 10. The temperature measuring junctions 71a of the five sets of thermocouples 71 are arranged at different heights in the vertical direction of the processing vessel 10. This allows temperatures at different heights inside the processing vessel 10 to be measured. The other end of each thermocouple 71 is drawn from the inside to the outside of the processing vessel 10 through a protective tube 73 and is connected to a relay terminal block 76 connected to a temperature controller 78. This allows the temperature controller 78 to measure the temperature at the temperature measuring junction 71a of each thermocouple 71, i.e., the temperature inside the processing vessel 10.

[0039] Five insulating members 72 are provided corresponding to the five sets of thermocouples 71, respectively. Each insulating member 72 is provided between each thermocouple 71 and the metal mesh 74, and covers each thermocouple 71. This prevents each thermocouple 71 from coming into direct contact with the metal mesh 74. Each insulating member 72 is formed of an insulator such as quartz.

[0040] Protective tube 73 has an L-shape that penetrates the sidewall of manifold 11 inward, bends upward, and extends vertically. That is, one end of protective tube 73, including a vertical portion, is located inside processing vessel 10, and the other end, including a horizontal portion, is located outside processing vessel 10. Protective tube 73 has an air atmosphere inside, and houses and protects five sets of thermocouples 71, five insulating members 72, and a metal mesh 74. Temperature measuring junctions 71a of the five sets of thermocouples 71 are arranged in the vertical portion of protective tube 73. Protective tube 73 is made of, for example, quartz.

[0041] The metal mesh 74 is disposed within the protective tube 73 and suppresses high-frequency noise from being generated in the five thermocouples 71 during plasma generation. This suppresses an increase in the electromotive force of the thermocouples 71 due to the high-frequency noise, thereby suppressing fluctuations in the output value of the internal temperature sensor 70 relative to the normal output value. The metal mesh 74 is preferably disposed so as to cover the temperature measurement junctions 71a of at least the five thermocouples 71, for example, so as to entirely cover all five thermocouples 71. The metal mesh 74 is grounded via lead wires 74a extending through the other end of the protective tube 73 to the outside of the processing vessel 10. The lead wires 74a are screwed to, for example, a reference potential point. Since the metal mesh 74 is disposed within the protective tube 73, the environment in which the metal mesh 74 is disposed is the atmosphere. Therefore, the metal mesh 74 is preferably formed of an oxidation-resistant material. Furthermore, the environment in which the protective tube 73 is disposed reaches high temperatures (e.g., 900°C), so the environment in which the metal mesh 74 is disposed is also high-temperature. Therefore, it is preferable that the metal mesh 74 is made of a heat-resistant material, such as a nickel alloy.

[0042] Furthermore, the metal mesh 74 preferably has a shielding effect of 40 dB or more in the electric field and 20 dB or more in the magnetic field against 27 MHz electromagnetic waves. The shielding effect is a value measured by the KEC method developed by the Kansai Electronics Industry Development Center (KEC). Furthermore, from the viewpoint of easy installation inside the protective tube 73, the metal mesh 74 preferably has a mesh that is highly flexible and easy to process. For example, as shown in FIG. 5, the metal mesh 74 preferably has a mesh with a wire diameter d of 0.1 mm and a mesh opening A of 0.323 mm. FIG. 5 is a diagram illustrating the wire diameter d and mesh opening A of the metal mesh 74. Furthermore, when the shielding effect of the metal mesh 74 having a mesh with a wire diameter d of 0.1 mm and a mesh opening A of 0.323 mm was measured, the metal mesh 74 had a shielding effect of 40 dB or more in the electric field and 20 dB or more in the magnetic field against 27 MHz electromagnetic waves, as shown in FIG. 6. 6 is a diagram showing the measurement results of the shielding effect of metal mesh 74, where the horizontal axis represents the frequency [MHz] of the electromagnetic wave and the vertical axis represents the shielding effect [dB]. In Fig. 6, circles represent the shielding effect of the electric field, and triangles represent the shielding effect of the magnetic field.

[0043] The line shield 75 is provided outside the processing vessel 10 to entirely cover the five sets of thermocouples 71. The line shield 75 may be, for example, a metal pipe covering the portions of the five sets of thermocouples 71 outside the processing vessel 10. The line shield 75 suppresses high-frequency noise generated in the five sets of thermocouples 71 during plasma generation. This suppresses an increase in the electromotive force of the thermocouples 71 due to the high-frequency noise, thereby suppressing fluctuations in the output value of the internal temperature sensor 70 from the normal output value. The line shield 75 is grounded, for example, via wire clamps 75a, at one or more positions between the protective tube 73 and the relay terminal block 76. In the example of FIG. 3, the line shield 75 is grounded via wire clamps 75a at two positions between the protective tube 73 and the relay terminal block, respectively.

[0044] The intermediate terminal block 76 is provided between the five sets of thermocouples 71 and the temperature controller 78. The intermediate terminal block 76 connects the other ends of the five sets of thermocouples 71 to compensation wires 79 connected to the temperature controller 78.

[0045] The noise filter 77 is provided between the intermediate terminal block 76 in the compensation lead wire 79 and the temperature controller 78. The noise filter 77 removes high-frequency noise generated in the five sets of thermocouples 71 during plasma generation. The noise filter 77 includes, for example, a ferrite core and a capacitor.

[0046] The temperature controller 78 measures the temperature at the hot junction 71 a of each thermocouple 71 , that is, the temperature inside the processing vessel 10 .

[0047] The compensation lead wire 79 connects the intermediate terminal block 76 and the temperature controller 78 .

[0048] As described above, according to the internal temperature sensor 70 of the embodiment, the metal mesh 74 is provided in the protective tube 73 that is provided to include the inside of the processing vessel 10 so as to cover the thermocouples 71. This makes it possible to suppress high-frequency noise generated in the five sets of thermocouples 71 during plasma generation without significantly reducing the responsiveness of the temperature measurement. As a result, the high-frequency noise is suppressed from increasing the electromotive force of the thermocouples 71, and therefore, the output value of the internal temperature sensor 70 can be suppressed from fluctuating from the normal output value.

[0049] Furthermore, according to the internal temperature sensor 70 of the embodiment, a metal mesh 74 is added inside the protective tube 73 so as to cover the thermocouple 71. This makes it possible to substantially avoid changes to the shapes and dimensions of the currently used thermocouple 71, insulating member 72, protective tube 73, etc. Furthermore, there is no need to change the design of the processing vessel 10. Therefore, there is no significant increase in costs.

[0050] FIG. 7 shows an example of temperature sensor output fluctuations due to high-frequency noise. It shows the output fluctuations of the internal temperature sensor when ammonia plasma is generated using RF power with a frequency of 27 MHz. In FIG. 7, the horizontal axis represents time, the first (left) vertical axis represents temperature [°C], and the second (right) vertical axis represents RF power [W]. As shown in FIG. 7, when the RF power is switched from off to on (200 W), the output values ​​(temperatures) of the three internal temperature sensors with temperature measuring junctions at the top (TOP), center (CTR), and bottom (BTM) in the vertical direction of the processing vessel 10 all increase. In particular, the output value of the internal temperature sensor with the temperature measuring junction at the center (CTR) differs by 0.7°C between when the RF power is on and when it is off. This is thought to be due to the high-frequency noise during plasma generation increasing the electromotive force of the thermocouples in the internal temperature sensors.

[0051] In the above embodiment, the metal mesh 74 is an example of an electromagnetic shield.

[0052] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0053] In the above embodiment, the processing vessel is a vessel having a single pipe structure, but the present disclosure is not limited to this. For example, the processing vessel may be a vessel having a double pipe structure.

[0054] In the above embodiment, the plasma processing apparatus is described as a batch-type apparatus that processes multiple wafers at once, but the present disclosure is not limited to this. For example, the processing apparatus may be a single-wafer processing apparatus that processes wafers one by one. Furthermore, for example, the processing apparatus may be a semi-batch-type apparatus that processes multiple wafers placed on a turntable in a processing chamber by rotating the turntable and passing the wafers sequentially through an area where a first gas is supplied and an area where a second gas is supplied.

[0055] In the above embodiment, the substrate is a semiconductor wafer, but the present disclosure is not limited to this. For example, the substrate may be a large substrate for a flat panel display (FPD), a substrate for an organic electroluminescence (EL) panel, or a substrate for a solar cell. [Explanation of symbols]

[0056] 1. Plasma processing equipment 10 Processing container 70 Internal temperature sensor 71 Thermocouple 71a Temperature measuring junction 72 Insulating material 73 Protection tube 74 Metal Mesh

Claims

1. A temperature sensor for measuring a temperature inside a processing vessel where plasma processing is performed, a thermocouple having a temperature measuring junction within the processing vessel; a protective tube that houses and protects the thermocouple; an electromagnetic shield provided in the protective tube so as to cover the thermocouple; an insulating member provided between the thermocouple and the electromagnetic shield; and the protective tube has one end located inside the processing vessel and the other end located outside the processing vessel, penetrates a sidewall of the processing vessel, and has an L-shape bent upwardly of the processing vessel; The electromagnetic shield is made of a metal mesh. Temperature sensor.

2. A temperature sensor for measuring a temperature inside a processing vessel where plasma processing is performed, a thermocouple having a temperature measuring junction within the processing vessel; a protective tube that houses and protects the thermocouple; an electromagnetic shield provided in the protective tube so as to cover the thermocouple; an insulating member provided between the thermocouple and the electromagnetic shield; and the protective tube has one end located inside the processing vessel and the other end located outside the processing vessel, penetrates a sidewall of the processing vessel, and has an L-shape bent upwardly of the processing vessel; the insulating member is provided with a gap between it and at least one of the temperature measuring junction and the electromagnetic shield; Temperature sensor.

3. A temperature sensor for measuring a temperature inside a processing vessel where plasma processing is performed, a thermocouple having a temperature measuring junction within the processing vessel; a protective tube that houses and protects the thermocouple; an electromagnetic shield provided in the protective tube so as to cover the thermocouple; an insulating member provided between the thermocouple and the electromagnetic shield; and the protective tube has one end located inside the processing vessel and the other end located outside the processing vessel, penetrates a sidewall of the processing vessel, and has an L-shape bent upwardly of the processing vessel; The inside of the protective tube is an atmospheric atmosphere. Temperature sensor.

4. The metal mesh is formed of a nickel alloy. The temperature sensor of claim 1 .

5. a processing vessel in which plasma processing is performed; a temperature sensor for measuring a temperature inside the processing vessel; Equipped with The temperature sensor a thermocouple having a temperature measuring junction within the processing vessel; a protective tube that houses and protects the thermocouple; an electromagnetic shield provided in the protective tube so as to cover the thermocouple; an insulating member provided between the thermocouple and the electromagnetic shield; and the protective tube has one end located inside the processing vessel and the other end located outside the processing vessel, penetrates a sidewall of the processing vessel, and has an L-shape bent upwardly of the processing vessel; The electromagnetic shield is made of a metal mesh. Plasma processing equipment.

6. a processing vessel in which plasma processing is performed; a temperature sensor for measuring a temperature inside the processing vessel; Equipped with The temperature sensor a thermocouple having a temperature measuring junction within the processing vessel; a protective tube that houses and protects the thermocouple; an electromagnetic shield provided in the protective tube so as to cover the thermocouple; an insulating member provided between the thermocouple and the electromagnetic shield; and the protective tube has one end located inside the processing vessel and the other end located outside the processing vessel, penetrates a sidewall of the processing vessel, and has an L-shape bent upwardly of the processing vessel; the insulating member is provided with a gap between it and at least one of the temperature measuring junction and the electromagnetic shield; Plasma processing equipment.

7. a processing vessel in which plasma processing is performed; a temperature sensor for measuring a temperature inside the processing vessel; Equipped with The temperature sensor a thermocouple having a temperature measuring junction within the processing vessel; a protective tube that houses and protects the thermocouple; an electromagnetic shield provided in the protective tube so as to cover the thermocouple; an insulating member provided between the thermocouple and the electromagnetic shield; and the protective tube has one end located inside the processing vessel and the other end located outside the processing vessel, penetrates a sidewall of the processing vessel, and has an L-shape bent upwardly of the processing vessel; The inside of the protective tube is an atmospheric atmosphere. Plasma processing equipment.

8. the processing vessel has a cylindrical shape and accommodates a plurality of substrates in multiple stages therein; The plasma processing apparatus according to any one of claims 5 to 7.

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