Ion source control method and ion source control device

Abstract

To achieve efficient ion source cleaning.SOLUTION: A control / data processing device 1 that controls an ion source determines whether an object to be inspected has been introduced into a peeling device (S102), starts the measurement of a first elapsed time (S103) while introducing the object to be inspected into the peeling device, and transitions the ion source to a coating stripping mode in which a discharge due to a larger potential difference is performed in the ion source than in the measurement mode for measuring fine particles (S105) when the introduction of the object to be inspected into the peeling device is not detected for a first predetermined time, that is, when the first elapsed time is equal to or longer than the first predetermined time (S104 "Yes").SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present invention relates to a technique for an ion source control method and an ion source control device. [Background technology]

[0002] In fields such as optics and the environment, the analysis of particulate matter adhering to test objects is carried out. In particular, in the environmental field, there is a demand for analytical devices that can measure particulate matter quickly, in real time, and with high sensitivity in order to understand the state of environmental pollution. In the industrial field, there is also a demand for analytical devices that can measure the components of substances adhering to industrial products quickly, in real time, and with high sensitivity for the purposes of managing production processes and quality control. Furthermore, in the security field, analytical devices are used at airports and other locations to analyze whether particulate matter adhering to passengers' hands or luggage is a hazardous substance. In either case, 100% testing is desirable, and high throughput is required.

[0003] For example, Patent Document 1 discloses an analytical device and method that "provides a method for analyzing in real time. Gas and / or particles of the detection target substance adhering to the authentication object 2 are detached by an airflow from an air supply unit 5, the detached sample is sucked in, concentrated and collected in a particle collection unit 10, sample ions are generated in an ion source unit 21, and mass analyzed in a mass analysis unit 23. The presence or absence of a mass spectrum derived from the detection target substance is determined from the obtained mass spectrum, and the result is displayed on a display unit 27, thereby detecting the detection target substance adhering to the authentication object 2 continuously, in real time, quickly, and with few false alarms" (see abstract).

[0004] Furthermore, for example, Patent Document 2 discloses an analytical device comprising: "an authentication unit that authenticates an object; an air supply unit that generates an air jet from at least two different directions toward the object; a recovery port that collects gas and / or particles detached from the object; an air intake unit that sucks in the gas and / or particles detached from the object; a flow rate control unit that controls the air jet from the air supply unit and the suction from the air intake unit; a particle collection unit that concentrates and collects the detection target substance contained in the sucked gas and / or particles; an analysis unit that analyzes the detection target substance introduced from the particle collection unit; and an analysis and determination control unit that determines the presence or absence of the detection target substance from the analysis results from the analysis unit" (see abstract).

[0005] The analytical devices described in these documents are characterized by their high throughput, which allows them to collect and analyze particles at high speed and with short measurement times. Generally, maintaining high throughput requires that the analytical device be kept in a state where it can perform measurements at any time. For example, analytical devices that use mass spectrometers sometimes use a discharge ion source as the ion source. In such cases, a discharge plasma is constantly generated inside the ion source, ensuring that sample gas can be instantly ionized whenever it reaches the ion source. The sample gas is comprised of particles adhering to the test object that have been vaporized by a heater. However, maintaining a constant discharge state like this quickly deteriorates the ion source, and improvements are needed.

[0006] Patent Documents 3 and 4 disclose techniques for preventing such deterioration of the ion source. For example, Patent Document 3 discloses cleaning of a corona discharge ion source, comprising: "an ion mobility spectrometry (IMS) detector having a corona discharge point that generates a corona discharge; and a processing system operatively connected to the IMS detector to operate the corona discharge point, the processing system being configured to operate the corona discharge point at an operating voltage for a first time interval to generate a corona discharge, and to operate the corona discharge point at a cleaning voltage higher than the operating voltage for a second time interval subsequent to the first time interval to generate a corona discharge, the processing system being configured to determine the effectiveness of the corona discharge point by at least one of (a) receiving a voltage required to generate a corona discharge at the corona discharge point, and (b) receiving a current generated by the corona discharge at the corona discharge point."

[0007] Patent Document 4 also discloses cleaning of a corona discharge ion source, comprising: "an ion mobility spectrometry (IMS) detector having a corona discharge point that generates a corona discharge; and a processing system operatively connected to the IMS detector to operate the corona discharge point, the processing system being configured to operate the corona discharge point at an operating voltage for a first time interval to generate a corona discharge, and to operate the corona discharge point at a cleaning voltage higher than the operating voltage for a second time interval following the first time interval to generate a corona discharge, the processing system being further configured to monitor the effectiveness of the corona discharge point and to operate the corona discharge point at the cleaning voltage again for the second time interval in response to a decrease in the effectiveness of the corona discharge point." [Prior art documents] [Patent documents]

[0008] [Patent Document 1] International Publication No. 2012 / 063796 [Patent Document 2] International Publication No. 2016 / 027320 [Patent Document 3] Patent No. 6291498 specification [Patent Document 4] Patent No. 6568963 specification Summary of the Invention [Problem to be solved by the invention]

[0009] However, in the situation where tests are performed continuously as disclosed in Patent Documents 1 and 2, applying a cleaning voltage as described in Patent Documents 3 and 4 means stopping the test, which poses a problem of causing subjects to remain.

[0010] Conventionally, analytical instruments that perform high-throughput analysis must be kept in a state where they can perform analysis at all times. In particular, the ion source must be constantly generating a discharge to keep the analytical instrument in a state where it can perform analysis at all times. However, this poses the problem of accelerating deterioration of the ion source.

[0011] The present invention has been made in view of the above background, and an object of the present invention is to realize efficient cleaning of an ion source. [Means for solving the problem]

[0012] In order to solve the above-mentioned problems, the present invention is characterized in that an ion source control device that controls an ion source executes a determination processing step of determining whether or not the approach of a person has been detected, and a mode control step of transitioning the ion source to a coating peeling mode in which a discharge caused by a potential difference larger than that in a measurement mode in which an object to be inspected is measured is performed in the ion source if the approach of the person is not detected for a first time period that is a predetermined time period. Other solutions will be described as appropriate in the embodiments. [Effects of the Invention]

[0013] According to the present invention, efficient cleaning of the ion source can be achieved. [Brief explanation of the drawings]

[0014] [Figure 1] 1 is a schematic diagram of a particle analysis system according to a first embodiment. [Figure 2] 1 is a diagram illustrating a configuration of a control / data processing device according to a first embodiment. [Figure 3] FIG. 2 is a schematic diagram showing the structure of an ion source. [Figure 4A] This is an electron microscope image of a needle electrode (part 1). [Figure 4B] This is an electron microscope image of a needle electrode (part 2). [Figure 4C] This is an electron microscope image of a needle electrode (part 3). [Figure 5] FIG. 3 is a diagram showing a processing procedure of an ion source control method performed by the control / data processing device according to the first embodiment. [Figure 6] FIG. 10 is a schematic diagram of a particle analysis system according to a second embodiment. [Figure 7] 10 is a flowchart showing the procedure of processing performed by a control / data processing device according to the second embodiment. [Figure 8] 10 is a flowchart showing the procedure of processing performed by a control / data processing device according to the third embodiment. [Figure 9] FIG. 10 is a diagram illustrating an operation in another example of the third embodiment. [Figure 10] FIG. 10 is a diagram illustrating a configuration of a control / data processing device according to a fourth embodiment. [Figure 11] 10 is a flowchart showing the procedure of processing performed by a control / data processing device according to the fourth embodiment. [Figure 12] FIG. 10 is a diagram showing the change over time in the variation of the discharge current value. [Figure 13] FIG. 10 is a configuration diagram of a particle analysis system according to a fifth embodiment. [Figure 14] FIG. 10 is a diagram illustrating a configuration of a control / data processing device according to a fifth embodiment. [Figure 15]10 is a flowchart showing the procedure of processing performed by a control / data processing device according to the fifth embodiment. [Figure 16] FIG. 10 is a diagram showing the flow rate of airflow in a pipe. [Figure 17] FIG. 10 is a configuration diagram of a particle analysis system according to a sixth embodiment. [Figure 18] 13 is a flowchart showing the procedure of processing performed by a control / data processing device according to the sixth embodiment. [Figure 19] 13 is a flowchart showing the procedure of processing performed by a control / data processing device according to the seventh embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0015] Hereinafter, a description will be given of a mode for carrying out the present invention (referred to as an "embodiment") with reference to the accompanying drawings. Note that in the present embodiment, specific examples based on the principles of the present invention are shown, but these are intended to aid in understanding the present invention and are not to be used to interpret the present invention in a limiting manner. Modifications resulting from combinations or substitutions of the following embodiments with known technologies are also included within the scope of the present invention. Note that in all drawings used to explain the embodiments, components having the same functions are given the same reference numerals, and repeated explanations thereof will be omitted.

[0016] [First embodiment] First, a first embodiment of the present invention will be described with reference to FIGS. (Particle Analysis System Z) FIG. 1 is a schematic diagram of a particle analysis system Z according to the first embodiment. The particle analysis system Z includes a control / data processing device (ion source control device) 1, a gas analyzer 2, a stripping device (insertion section) 3, and a concentration section 4. The gas analyzer 2 includes a mass spectrometer 21 and an ion source 200. The concentration unit 4 includes a cyclone concentration device (cyclone collection unit) 401, an exhaust device 402, a heater 411, a primary filter (filter) 412, and a secondary filter 422. The gas analyzer 2 is connected downstream of the cyclone concentration device 401 via a pipe 421. The peeling device 3 includes an air nozzle 302 and an inspection object detection sensor 303.

[0017] (Peeling device 3) The air nozzle 302 is connected to an air tank 502 via a pulse valve 501. The air tank 502 is connected to a compressor 504 via a pressure controller 503.

[0018] When the test object B is introduced into the peeling device 3, a peeling gas is sprayed from the air nozzle 302 via the pulse valve 501 (solid thin arrow). In this manner, the peeling gas is sprayed onto the test object B, thereby peeling off particles adhering to the test object B. The peeling device 3 is connected to the cyclone concentrator 401 via the particle suction port 301. The interior of the cyclone concentrator 401 is evacuated by the exhaust device 402 (open arrow). Furthermore, the ion source 200 provided in the gas analyzer 2 is also provided with an ion source exhaust pump (not shown). As the ion source exhaust pump exhausts the air inside the ion source 200, the air inside the cyclone concentrator 401 is drawn toward the ion source 200. Therefore, the inside of the cyclone concentrator 401 is under negative pressure due to the exhaust by the exhaust device 402 and the suction by the ion source exhaust pump. Therefore, the particles peeled off by the peeling device 3 are drawn into the cyclone concentrator 401 through the particle suction port 301. The air nozzle 302 injects the peeling gas when an inspection object detection sensor (detection sensor) 303 installed in the peeling device 3 detects the approach of the inspection object B.

[0019] Compressed gas is stored in air tank 502. The gas pressure inside air tank 502 is increased to about 0.7 MPa by compressor 504. The pressure of the stripping gas when sprayed from air nozzle 302 is adjusted by pressure controller 503.

[0020] (Concentration section 4) In the concentration section 4, the heater 411, the primary filter 412, and the secondary filter 413 are installed in a pipe 421 that connects the cyclone concentration device 401 and the ion source 200.

[0021] As described above, the cyclone concentrating device 401 is connected to the separation device 3 via the particle suction port 301. Furthermore, as described above, the particles sucked by the separation device 3 are introduced into the cyclone concentrating device 401 via the particle suction port 301. Inside the cyclone concentrating device 401, a vortex airflow is generated by exhaust from the exhaust device 402. The centrifugal force of the vortex airflow generated inside the cyclone concentrating device 401 separates the particles introduced into the cyclone concentrating device 401 from the air and concentrates them. Then, the separated and concentrated particles are directed toward the bottom of the cyclone concentrating device 401 by air intake from an ion source exhaust pump (not shown) provided in the ion source 200 (dashed arrow in FIG. 1 ).

[0022] A heater 411 installed at the bottom of the cyclone concentrator 401 is equipped with a primary filter 412. The fine particles sent from the cyclone concentrator 401 are collected by the primary filter 412 and vaporized by being heated by the heater 411. The vaporized fine particles (hereinafter referred to as the sample gas) pass through a secondary filter 413 and are introduced into the gas analyzer 2. The secondary filter 413 serves to prevent the fine particles that have passed through the primary filter 412 from being introduced into the gas analyzer 2. The heater 411 heats the fine particles to, for example, 200°C. The temperature of the heater 411 may be any temperature that can vaporize the collected fine particles, and may be changed depending on the components of the fine particles to be inspected. The primary filter 412 and the secondary filter 413 may have a filtration accuracy sufficient to capture fine particles with a particle size of 1 μm or more. For example, a stainless steel filter with a filtration accuracy of 1 to 50 μm may be used as the primary filter 412 and the secondary filter 413.

[0023] (Gas analyzer 2) For example, a linear ion trap mass spectrometer can be used as the gas analyzer 2. Alternatively, a quadrupole ion trap mass spectrometer, a quadrupole filter mass spectrometer, a triple quadrupole mass spectrometer, a time-of-flight mass spectrometer, a magnetic field mass spectrometer, or the like may be used as the gas analyzer 2. Alternatively, an ion mobility analyzer or the like may be used as the gas analyzer 2. Furthermore, a device in which an ion mobility analyzer and a mass analyzer are coupled may also be used as the gas analyzer 2.

[0024] The ion source 200 ionizes the introduced sample gas. The mass spectrometer 21 analyzes the fine particles ionized by the ion source 200. A cyclone concentrator 401 is provided upstream of the ion source 200. In this embodiment, the side of the stripping device 3 is referred to as the upstream side, and the side of the ion source 200 is referred to as the downstream side. The ion source 200 may be an atmospheric pressure chemical ion source, a barrier discharge ion source, a glow discharge ion source, or the like. The components of the sample gas ionized by the ion source 200 are analyzed by the mass spectrometer 21. As described above, the ion source 200 is provided with an ion source exhaust pump (not shown). The inside of the ion source 200 is under negative pressure due to exhaust by the ion source exhaust pump.

[0025] A control / data processing device 1 is also connected to the gas analyzer 2. The control / data processing device 1 acquires signal data output by the gas analyzer 2 and analyzes the acquired signal data to analyze particles and detect targets. The term "target" refers to particles to be detected. For example, if the purpose is to detect dangerous materials, explosives such as TNT, TATP, and RDX are the targets.

[0026] (Control / Data Processing Unit 1) The control / data processing device 1 controls the ion source 200, receives signals from the inspection object detection sensor 303, and controls the exhaust device 402 and pulse valve 501. The dashed lines in Fig. 1 indicate control lines. Note that the control lines between the control / data processing device 1 and the pulse valve 501 are omitted in Fig. 1.

[0027] When a mass spectrometer is used as the gas analyzer 2, the control / data processing device 1 analyzes the mass spectrum measured by the gas analyzer 2. The control / data processing device 1 then identifies the components of the particulate matter and determines their concentrations from the mass spectrum. For example, when the particulate analysis system Z is a hazardous material detection system, a database (not shown) related to hazardous materials is stored in advance in the control / data processing device 1. This database contains thresholds for identifying the components of the hazardous materials and determining their concentrations. If the concentration of the detected component exceeds a specified threshold, the control / data processing device 1 makes a positive determination. Particulate matter analysis is not limited to mass spectrometers, but also occurs in other gas analyzers 2, such as ion mobility analyzers, by comparing the results with the database.

[0028] (Configuration of control / data processing device 1) FIG. 2 is a diagram showing the configuration of the control / data processing device 1 according to the first embodiment. The control / data processing device 1 includes a memory 110, an arithmetic unit 121, a storage device 122, an input device 123, a display device 124, and a communication device 125. The memory 110 is configured with a RAM (Random Access Memory) and the like. The arithmetic unit 121 is configured with a CPU (Central Processing Unit), a GPU (Graphic Processing Unit), and the like. The storage device 122 is configured with an HDD (Hard Disk Drive), an SDD (Solid State Drive), and the like. The input device 123 is configured with a keyboard, a mouse, and the like. The display device 124 is configured with a display, and the like. Furthermore, the communication device 125 transmits and receives information to and from the gas analyzer 2.

[0029] Furthermore, a program stored in the storage device 122 is loaded into the memory 110, and the loaded program is executed by the arithmetic unit 121. As a result, an elapsed time measurement unit 111, a determination processing unit 112, and a mode control unit 113 are realized. The elapsed time measurement unit 111 measures the time elapsed since the last particle inspection was performed. Note that particle inspection means inspecting particles adhering to the inspection object B. Specifically, particles adhering to the inspection object B shown in FIG. 1 are stripped by a stripping gas, and the stripped particles are analyzed by the gas analyzer 2 (see FIG. 1). The determination processing unit 112 determines whether or not the approach of a person has been detected. The mode control unit 113 controls the mode transition of the ion source 200 (see FIG. 1), such as a measurement mode or a coating removal mode, depending on the determination result of the determination processing unit 112. The measurement mode and the coating removal mode will be described later. The processes performed by the elapsed time measurement unit 111, the determination processing unit 112, and the mode control unit 113 will be described in detail later.

[0030] (Ion source 200) 3 is a schematic diagram showing the structure of the ion source 200. FIG. 1 will be referred to as appropriate. FIG. 3 shows a schematic diagram of a counterflow atmospheric pressure chemical ion source as an example of an ion source 200. The ion source 200 has a needle electrode 201, a counter electrode 202, and a narrow hole electrode 203 connected to the mass spectrometer 21. A voltage is applied to the needle electrode 201 by a power supply 211. This generates a high potential difference between the needle electrode 201 and the counter electrode 202. As a result, plasma P is generated near the tip of the needle electrode 201. The potential difference between the needle electrode 201 and the counter electrode 202 is, for example, about 3000 V. Sample gas supplied from a cyclone concentration device 401 flows from the counter electrode 202 side to the needle electrode 201 side (shown by the bold white arrow in FIG. 3). Molecules in the sample gas are ionized as the sample gas passes through the plasma P. The generated ions N (negative ions in the example shown in FIG. 3) move from the plasma P side to the mass spectrometer 21 side (shown by the bold solid arrow in FIG. 3). This movement is caused by the force of the electric field formed by the needle electrode 201, the counter electrode 202, and the aperture electrode 203, and by the suction force of a suction pump (not shown) provided in the mass analysis unit 21. The ions N then pass through the aperture electrode 203 and are introduced into the mass analysis unit 21. When analyzing positive ions, the needle electrode 201 has a higher potential than the counter electrode 202, and when analyzing negative ions, the counter electrode 202 has a higher potential than the needle electrode 201. Hereinafter, the potential difference between the needle electrode 201 and the counter electrode 202 may be simply referred to as the potential difference.

[0031] An ammeter 212 is connected between the power supply 211 and the needle electrode 201. The ammeter 212 measures the current flowing between the power supply 211 and the needle electrode 201.

[0032] The particle analysis system Z shown in FIG. 1 can be used as a hazardous material detection system. In this case, when the particle analysis system Z detects an inspection object B with the inspection object detection sensor 303, it can automatically and quickly analyze whether particles adhering to the inspection object B are hazardous. To perform continuous analysis with high throughput, the particle analysis system Z is required to always be in a measurement-enabled state, i.e., maintain a measurement mode. For example, when a mass spectrometer is used as the gas analyzer 2, the ion source 200 is always discharging, maintaining a state in which sample gas can be ionized whenever it is introduced into the mass spectrometer. The discharge may always be of either positive or negative polarity, or may be continuously switched between positive and negative polarities. Positive polarity refers to a state in which the needle electrode 201 has a higher potential than the counter electrode 202, and negative polarity refers to a state in which the counter electrode 202 has a higher potential than the needle electrode 201. Alternatively, the discharge may be pulsed. For example, when the gas analyzer 2 is a linear ion trap mass spectrometer, the discharge may be stopped at the following times: (A1) The time from when ion N is trapped in the ion trap until it is ejected toward a detector (not shown) of the mass analysis unit 21. (B2) The time required to expel ion N from within the ion trap.

[0033] In this way, if discharge occurs almost constantly in the ion source 200, deterioration of the ion source 200 progresses. If the particulate analysis system Z is installed in a field rather than in an environment with clean air such as a laboratory, various dust particles will be taken into the ion source 200 from the surroundings. In particular, if dust particles containing silicon are taken into the ion source 200, silicon oxide will be generated by the discharge in the ion source 200. The generated silicon oxide will then adhere to the needle electrode 201 and become an oxide film (hereinafter referred to as the film). Reference numeral 221 in FIG. 3 will be described later.

[0034] (Deterioration of needle electrode 201) 4A and 4B are electron microscope images of the needle electrode 201. Please refer to FIGS. 1 and 3 as appropriate. FIG. 4A shows a brand new needle electrode 201, and FIG. 4B shows a state in which a coating of silicon oxide has formed on the surface of the needle electrode 201. In FIG. 4A, the metal surface of the needle electrode 201 is exposed, but in FIG. 4B, a black coating has formed around the needle electrode 201. When such a coating forms on the needle electrode 201, the discharge becomes unstable, ionization of the sample gas is hindered, and an accurate mass spectrum cannot be obtained. In other words, in the situation shown in FIG. 4B, even if the particle analysis system Z inspects an inspection target B to which a hazardous substance has adhered, the particle analysis system Z will not be able to detect the hazardous substance.

[0035] Therefore, a means for removing the coating formed on the needle electrode 201 is required. Therefore, in this embodiment, a coating removal mode is introduced in addition to the measurement mode. Incidentally, the measurement mode is a state in which discharge for ionizing the sample gas (test object) is performed in the ion source 200. In other words, the measurement mode is a mode in which the sample gas is measured. That is, in this embodiment, the particle analysis system Z has at least two modes: a measurement mode and a coating removal mode. In the coating removal mode, the potential difference between the needle electrode 201 and the counter electrode 202 is made larger than that in the measurement mode for a specified time. For example, in the coating removal mode, the potential difference between the needle electrode 201 and the counter electrode 202 is about 4000 V, and the time is about 2 minutes. If the ion source 200 is a counterflow atmospheric pressure chemical ion source, the potential difference between the needle electrode 201 and the counter electrode 202 is made larger than that in the measurement mode. The potential of either the needle electrode 201 or the counter electrode 202 may be changed. Alternatively, the potential difference may be made larger than that in the measurement mode by changing the potentials of both the needle electrode 201 and the counter electrode 202. In the coating removal mode, a constant potential difference may be applied in either positive or negative polarity, as in the measurement mode. Alternatively, the positive and negative potential differences between the needle electrode 201 and the counter electrode 202 may be switched. In either case, a larger potential difference is applied between the needle electrode 201 and the counter electrode 202 in the coating removal mode than in the measurement mode. In this way, in the coating removal mode, a discharge occurs in the ion source 200 due to a larger potential difference than in the measurement mode (discharge is performed on the ion source 200).

[0036] In the film peeling mode, as shown by reference numeral 221 in FIG. 3 , maintaining the needle electrode 201 at a higher potential than the counter electrode 202, i.e., maintaining a positive discharge for a certain period of time, can improve the film peeling efficiency compared to applying a potential of the opposite polarity. Under such conditions, a discharge occurs near the tip of the needle electrode 201, and plasma P is generated as in FIG. 3 . That is, in the film peeling mode, as shown by reference numeral 221 in FIG. 3 , plasma P is generated when the potential of the needle electrode 201 is higher than the potential of the counter electrode 202. Oxygen ions are generated within this plasma P. Furthermore, oxygen ions generated by the force of the electric field generated by the potential difference between the needle electrode 201 and the counter electrode 202 collide with the needle electrode 201, peeling off the film formed on the needle electrode 201. Furthermore, this effect is enhanced in the counterflow atmospheric pressure chemical ion source compared to other types of ion sources 200. In a counterflow atmospheric pressure chemical ion source, the sample gas flows from the counter electrode 202 side to the needle electrode 201 side (shown by the open arrow in Figure 3). Therefore, oxygen ions generated at the tip of the needle electrode 201 are subjected to not only the force of the electric field but also the fluid force caused by the flow of oxygen ions, and collide with the needle electrode 201. Therefore, the oxygen ions collide more strongly with the needle electrode 201, enabling the coating to be peeled off efficiently.

[0037] Figure 4C is an electron microscope image acquired after the coating on the needle electrode 201 was peeled off in the coating peeling mode. The coating on the tip of the needle electrode 201 has peeled off, exposing the metal surface (reference numeral 801). By exposing the metal surface of the needle electrode 201 in this way, stable discharge can again occur between the needle electrode 201 and the counter electrode 202. Note that, as shown in Figure 4C, a sufficient effect can be obtained even when the coating is peeled off only from a portion of the needle electrode 201.

[0038] The state of the ion source 200 changes between the coating removal mode and the measurement mode, and it is not possible to properly analyze particles in the coating removal mode. Therefore, when performing the coating removal mode, the particle analysis system Z interrupts the measurement mode and transitions the ion source 200 to the coating removal mode. If the ion source 200 is transitioned to the coating removal mode when subjects are being continuously measured, the measurement will be interrupted, causing a queue of subjects to form, impairing usability. Therefore, it is preferable to transition the ion source 200 from the measurement mode to the coating removal mode when no subjects are present.

[0039] (flowchart) Fig. 5 is a diagram showing the procedure of the ion source control method performed by the control / data processing device 1 according to the first embodiment. Fig. 5 shows a sequence for transitioning the ion source 200 from the measurement mode to the coating removal mode. Figs. 1 to 3 are also referred to in Fig. 5 as appropriate. First, the mode control unit 113 sets the ion source 200 to the measurement mode (S101). During the measurement mode, the ion source 200 continues to perform discharge for the measurement mode.

[0040] During the measurement mode, the determination processing unit 112 determines whether or not the introduction (insertion) of the inspection object B into the peeling device 3 has been detected by the inspection object detection sensor 303 (S102: determination processing step). As a result, the determination processing unit 112 determines whether or not the approach of a person has been detected. When the inspection object detection sensor 303 detects that the inspection object B has been introduced into the peeling device 3 (S102 → Yes), the elapsed time measurement unit 111 starts measuring the first elapsed time (S103). Then, the control / data processing device 1 returns the process to step S101. In this way, during the measurement mode, the elapsed time measurement unit 111 measures and records the first elapsed time, which is the time elapsed since the last particle inspection was performed. In other words, the elapsed time measurement unit 111 records the time during which the inspection object detection sensor 303 does not detect the approach of the inspection object B as the first elapsed time.

[0041] If the inspection object detection sensor 303 does not detect the introduction of the inspection object B into the peeling device 3 (S102 → No), the judgment processing unit 112 judges whether the first elapsed time is equal to or greater than a first predetermined time (first time which is a predetermined time) ta (S104). If the first elapsed time is less than the first predetermined time ta (S104→No), the control / data processing device 1 returns the process to step S101. If the first elapsed time is equal to or longer than the first predetermined time ta (S104→Yes), the mode control unit 113 starts the coating removal mode (S105: mode control step). In step S105, the mode control unit 113 transitions the ion source 200 to the coating removal mode. In this way, in step S104, if the first elapsed time is equal to or greater than a certain value (first predetermined time ta) (S104→Yes), the control / data processing device 1 determines that the time period is a time period in which the subject is not expected to appear for some time (predetermined time). In other words, selecting "Yes" in step S104 corresponds to a case in which no approaching person is detected for the first predetermined time ta. Then, the control / data processing device 1 transitions the ion source 200 from the measurement mode to the coating removal mode (S105). In the coating removal mode, for example, a potential difference of 4000 V is generated between the needle electrode 201 and the counter electrode 202 for two minutes as described above.

[0042] After step S105, the determination processing unit 112 determines whether or not the introduction of the inspection object B into the peeling device 3 has been detected by the inspection object detection sensor 303 (S111). When the inspection object detection sensor 303 detects that the inspection object B has been introduced into the peeling device 3 (S111→Yes), the mode control unit 113 stops the coating peeling mode (S112). Then, the elapsed time measurement unit 111 resets the first elapsed time (S121), and the control / data processing device 1 returns the process to step S101. When the inspection object detection sensor 303 does not detect the introduction of the inspection object B into the peeling device 3 (S102→No), the mode control unit 113 determines whether the coating peeling process is completed (S113).

[0043] If the coating peeling process is not completed (S113→No), the control / data processing device 1 returns the process to step S105. The coating peeling process is a process performed in the coating peeling mode, and more specifically, is a process of generating a higher potential difference between the needle electrode 201 and the counter electrode 202 than in the measurement mode. If the coating removal process is completed (S113→Yes), the elapsed time measurement unit 111 resets the first elapsed time (S121). Thereafter, the control / data processing device 1 returns the process to step S101. As a result, the mode control unit 113 transitions the ion source 200 from the coating removal mode to the measurement mode (S101). At this time, the control / data processing device 1 is prepared to be in a state where it can immediately start inspection when the inspection object detection sensor 303 detects the approach of the inspection object B.

[0044] When the ion source 200 is transitioned from the coating removal mode to the measurement mode (S113→Yes), the elapsed time measurement unit 111 resets the first elapsed time and does not measure the first elapsed time until the next test is performed. When the next test is performed, the elapsed time measurement unit 111 starts measuring the first elapsed time again (S103). If the first elapsed time is equal to or greater than the first predetermined time ta (S104→Yes), the ion source 200 transitions to the coating removal mode. Then, the control / data processing device 1 determines whether or not the approach of the test object B is not detected for the first predetermined time ta during the measurement mode (S104). If the approach of the test object B is not detected for the first predetermined time ta (S104→Yes), the mode control unit 113 transitions the ion source 200 to the coating removal mode (S105). In the coating peeling mode, a potential difference higher than that in the measurement mode is generated between the needle electrode 201 and the counter electrode 202 for a certain period of time.

[0045] According to the first embodiment, if no particle inspection is performed for a predetermined time, the control / data processing device 1 determines that no one is coming and executes the coating removal mode. This makes it possible to restore the deteriorated needle electrode 201 while maintaining the throughput of the particle inspection. In other words, according to the first embodiment, it is possible to restore the deteriorated ion source 200 without disassembling the ion source 200 and without impairing usability (high throughput), thereby extending the life of the ion source 200.

[0046] In the above description, the ion source 200 is transitioned from the measurement mode to the coating removal mode using the first elapsed time, which is the time elapsed since the last test was performed, as a trigger, but the trigger is not necessarily limited to this. It is sufficient to determine that the timing is not such that the subject will not be continuously tested. For example, as shown in FIG. 6, a human presence sensor 311 may be installed in the particle analysis system Z. Then, instead of detecting the introduction of the test object B in step S102 or step S111 in FIG. 5, the human presence sensor 311 may determine whether or not the subject is present within a predetermined range around the particle analysis system Z.

[0047] From the viewpoint of not keeping the subject waiting, it is desirable to transition the ion source 200 to the measurement mode when the subject appears (when the approach of the test subject B is detected) even during the coating removal mode, as shown in step S112 of Fig. 5. It is desirable to transition the ion source 200 from the coating removal mode to the measurement mode when the test subject detection sensor 303 detects the introduction of the test subject B during the coating removal mode, as shown in steps S111 "Yes" to S112 of Fig. 5. This allows the test of the test subject B to start immediately, even during the coating removal process.

[0048] 5, the determinations in steps S102 and S111 are made based on the detection of the test object B by the test object detection sensor 303. However, this is not limiting, and a human presence sensor 311 may be provided in the particle analysis system Z as shown in FIG. 6. In this case, the determinations in steps S102 and S111 may be made based on whether the human presence sensor 311 detects the approach of a test subject. In such a configuration, when the human presence sensor 311 detects the approach of a test subject during the coating removal mode, the ion source 200 may be transitioned from the coating removal mode to the measurement mode (S111→Yes) so that testing can be started immediately.

[0049] [Second embodiment] In addition to the measurement mode and coating removal mode, the particle analysis system Z can also have a standby mode. In the standby mode, the discharge between the needle electrode 201 and the counter electrode 202 is stopped. This is to reduce the discharge time and the deterioration rate of the needle electrode 201.

[0050] (Particle Analysis System Za) FIG. 6 is a schematic diagram of a particle analysis system Za according to the second embodiment. 6, the same components as those in FIG. 1 are denoted by the same reference numerals and the description thereof will be omitted. In the particle analysis system Za shown in Fig. 6, a human presence sensor 311 is provided in the peeling device 3. Although the human presence sensor 311 is provided in the peeling device 3 in the example shown in Fig. 6, the human presence sensor 311 may be provided in a location other than the peeling device 3. Since the configuration of the control / data processing device 1 in the second embodiment is the same as that shown in Fig. 2, a description thereof will be omitted here. In each of the following embodiments, only cases in which the configuration of the control / data processing device 1 differs from that shown in Fig. 2 will be illustrated and described, and illustration and description of the control / data processing device 1 will be omitted if the configuration is the same as that shown in Fig. 2.

[0051] (flowchart) Fig. 7 is a flowchart showing the procedure of processing performed by the control / data processing device 1 according to the second embodiment. Fig. 7 shows a measurement sequence when using the standby mode. In Fig. 7, Fig. 2 and Fig. 6 are referred to in Fig. 5 as appropriate, and the same steps as those in Fig. 5 are given the same step numbers and will not be described again. The first elapsed time is used as a trigger to transition the ion source 200 from the measurement mode to the coating removal mode, and the process is the same as in FIG. 5 up to the end of the coating removal process (S113 "Yes").

[0052] Then, after the coating removal process is completed (S113→Yes: coating removal mode is completed), the mode control unit 113 transitions the ion source 200 to the standby mode (S201: mode control step). Thereafter, the determination processing unit 112 determines whether or not the approach of the subject has been detected (S202). The approach of the subject is determined based on whether or not the test object detection sensor 303 detects the approach of the test object B or whether or not the human presence sensor 311 detects the approach of the subject. If the approach of the subject has not been detected (S202→No), the control / data processing device 1 returns the process to step S201. When the control / data processing device 1 detects the approach of the subject (S202→Yes), the control / data processing device 1 returns the process to step S101 and causes the ion source 200 to transition from the standby mode to the measurement mode.

[0053] 7, the approach of the subject is determined by the human sensor 311, but the present invention is not limited to this. The detection of the inspection object B by the inspection object detection sensor 303 may also be determined.

[0054] As described above, according to the second embodiment, when the coating peeling process is completed, the control / data processing device 1 transitions the ion source 200 to a standby mode in which discharge is stopped, thereby slowing down the deterioration rate of the needle electrode 201 compared to the first embodiment.

[0055] [Third embodiment] In the measurement sequences shown in Figures 5 and 7, if the subject does not appear for a certain period of time, the ion source 200 is always switched to the coating removal mode. As described above, in the coating removal mode, a higher potential difference is generated between the needle electrode 201 and the counter electrode 202 than in the measurement mode, and a stronger discharge is generated than in the measurement mode. However, while a high potential difference has the advantage of removing the coating from the needle electrode 201, it may also wear down the needle electrode 201 itself. Therefore, it is undesirable to generate an unnecessarily high potential difference.

[0056] (flowchart) FIG. 8 is a flowchart showing the procedure of processing performed by the control / data processing device 1 according to the third embodiment. In FIG. 8, FIG. 1 and FIG. 2 are referenced in FIG. 5 as appropriate, and the same processing as in FIG. 7 is assigned the same step numbers and description thereof is omitted. Note that the configuration of the particle analysis system Za in the third embodiment is the same as that in FIG. 6, and therefore description thereof is omitted here. In each of the following embodiments, the particle analysis system Z is illustrated and described only when the configuration of the particle analysis system Za differs from that shown in FIG. 6, and when the configuration of the particle analysis system Za is the same as that shown in FIG. 6, illustration and description of the particle analysis system Za are omitted. Also, in FIG. 8, due to space limitations, processing from step S113 "Yes" onwards is omitted, but from step S113 "Yes" onwards, processing of steps S201 and S202 shown in FIG. 7 is performed. First, the elapsed time measurement unit 111 starts measuring the second elapsed time (S301). The second elapsed time is the time that has elapsed since the ion source 200 was switched to the coating peeling mode. If the first elapsed time is equal to or greater than the first predetermined time ta in step S104 (S104→Yes), the determination processing unit 112 determines whether the second elapsed time is equal to or greater than a second predetermined time (second time) tb (S302). The second predetermined time tb is a predetermined time different from the first predetermined time ta. That is, in step S302, the determination processing unit 112 determines whether the elapsed time (second elapsed time) after the ion source 200 was switched to the measurement mode is equal to or greater than the second predetermined time tb.

[0057] If the second elapsed time is less than the second predetermined time tb (S302→No), the mode control unit 113 transitions the ion source 200 to the standby mode (S201 in FIG. 7). That is, after the coating peeling mode ends, the mode control unit 113 transitions the ion source 200 to the standby mode in which discharge is stopped. After the determination in step S113 is "Yes," steps S201 and S202 shown in FIG. 7 are performed, but are not shown in FIG. If the second elapsed time is equal to or longer than the second predetermined time tb (S302→No), the mode control unit 113 transitions the ion source 200 to the coating peeling mode (S105).

[0058] As described above, in the third embodiment, as one solution for avoiding an unnecessary high potential difference, as shown in FIG. 8 , the time management of whether to enter the coating removal mode is performed separately from whether to transition the ion source 200 to the standby mode. For example, it is assumed that the coating removal mode is to be entered once a day. In this case, even if the subject does not appear for a certain period of time, if 24 hours or more have not passed since the previous transition of the ion source 200 to the coating removal mode, the ion source 200 is not transitioned to the coating removal mode, but is transitioned directly from the measurement mode to the standby mode. This process corresponds to the process of "No" in step S301 in FIG. 8 . When the subject does not appear for a certain period of time (when the approach of a person is not detected for the first predetermined time ta), this refers to when the introduction of the test subject B is not detected. On the other hand, if the subject does not appear for a certain period of time or more and 24 hours or more have passed since the ion source 200 was last switched to the coating removal mode, the mode control unit 113 switches the ion source 200 to the coating removal mode and then to the standby mode. This process corresponds to the process of "Yes" in step S301 in FIG. 8.

[0059] 8, the second elapsed time is the accumulated time elapsed since the ion source 200 was switched to the coating removal mode. However, this is not limiting, and the second elapsed time for determining whether to switch the ion source 200 to the coating removal mode may be the time elapsed since the ion source 200 was switched to the measurement mode. In this case, step S302 in FIG. 8 is omitted, and the time elapsed since the ion source 200 was switched to the measurement mode is measured as the second elapsed time, separately from the first elapsed time. Then, in step S301, it is determined whether the second elapsed time, which is the time elapsed since the ion source 200 was switched to the measurement mode, is equal to or longer than the second predetermined time tb.

[0060] Referring to FIG. 9, as another example of the third embodiment, an operation will be described in which the elapsed time after the ion source 200 is shifted to the measurement mode is integrated as the second elapsed time. For example, suppose that the ion source 200 transitions to the coating removal mode after the measurement mode lasted for a total of 24 hours or more (time t1 in FIG. 9 ). After the coating removal process is completed (time t2 in FIG. 9 ), the standby mode lasted for 24 hours or more (T1≧24h in FIG. 9 ), and then the ion source 200 transitions to the measurement mode (time t3). Furthermore, suppose that the duration of the measurement mode from the transition of the ion source 200 to the measurement mode until the present (tnow) is within 24 hours (T2<24h in FIG. 9 ). In this case, the elapsed time from the end of the previous coating removal mode to the present is 24 hours or more (T11≧24h in FIG. 9 ), but the elapsed time since the transition of the ion source 200 to the measurement mode is within 24 hours (T2<24h in FIG. 9 ). In this case, if the subject does not appear for a certain period of time even after the elapsed time (T2 in FIG. 9) after the ion source 200 transitions to the measurement mode has reached the second predetermined time tb in FIG. 8, the mode control unit 113 transitions the ion source 200 to the standby mode. That is, the mode control unit 113 transitions the ion source 200 to the standby mode without transitioning the ion source 200 to the coating removal mode. As described above, discharge is stopped in the standby mode. When discharge is stopped, the needle electrode 201 of the ion source 200 does not deteriorate. Therefore, it is reasonable to determine whether to transition the ion source 200 to the coating removal mode based on the elapsed time in the measurement mode.

[0061] According to the third embodiment, the coating removal mode is not executed unless the second elapsed time is equal to or greater than the second predetermined time tb. The second elapsed time is the cumulative time elapsed since the ion source 200 transitioned to the coating removal mode or the measurement mode. This reduces the number of times the coating removal mode is executed, thereby reducing the number of unnecessary discharges in the coating removal mode. This delays the deterioration of the needle electrode 201 compared to the first and second embodiments.

[0062] [Fourth embodiment] (Control / Data Processing Unit 1) FIG. 10 is a diagram showing the configuration of the control / data processing device 1 in the fourth embodiment. 10, only the memory 110 is shown, and the other configurations are the same as those in FIG. 2, so illustration and description thereof will be omitted. In FIG. 10, an output processing unit 114 is added to the configuration in FIG. The output processing unit 114 performs output to a display device 124 (see FIG. 2).

[0063] (flowchart) Fig. 11 is a flowchart showing the procedure of processing performed by the control / data processing device 1 according to the fourth embodiment. In Fig. 11, Figs. 1, 3, and 10 are referred to as appropriate, and the same processes as those in Fig. 7 are given the same reference numerals and their explanations are omitted. Also, Fig. 11 explains the processing from step S113 "Yes" onwards in Fig. 7. The processing from steps S101 to S113 is the same as in Fig. 7. The measurement sequence in FIG. 11 includes an ion source status monitoring mode after the coating removal mode. That is, after the coating removal process is completed (S113 in FIG. 7 → Yes: coating removal mode is completed), the mode control unit 113 executes the ion source state monitoring mode (S401: mode control step). The determination processing unit 112 determines the deterioration state of the ion source 200 in the ion source monitoring mode. That is, the determination processing unit 112 determines whether the ion source 200 is deteriorated or not in the ion source state monitoring mode. There are various methods for determining the deterioration state. For example, the determination processing unit 112 examines the relationship between the current and the potential difference between the needle electrode 201 and the counter electrode 202 during discharge. In practice, the determination processing unit 112 determines the state of the ion source 200 based on the current value measured by the ammeter 212 shown in FIG. 3. If the value of the current flowing between the needle electrode 201 and the counter electrode 202 is known, the potential difference generated between the needle electrode 201 and the counter electrode 202 can also be determined.

[0064] When a film is formed on the needle electrode 201 (see FIG. 3 ), a lower current value may be generated compared to when there is no film, even with the same potential difference. Furthermore, even if a potential difference is generated between the needle electrode 201 and the counter electrode 202, no discharge may occur, and no current value may be observed. When examining the relationship between the potential difference and the current value, the control / data processing device 1 may obtain the current value from the ammeter 212 while maintaining a constant potential difference while discharging, or may continuously switch the polarity (positive / negative) of the discharge. Alternatively, the control / data processing device 1 may examine only one of the positive and negative polarities of the discharge. However, because the negative side discharge is more sensitive to changes in the current value relative to changes in the potential difference than the positive side discharge, it is preferable to check the negative polarity discharge. In the ion source monitoring mode, it is also possible to operate the ion source 200 under the same discharge conditions as in the measurement mode without introducing sample gas. In this case, the control / data processing device 1 determines the discharge state from the amount of oxygen ions in this state. This allows the control / data processing device 1 to determine the deterioration state of the ion source 200. At this time, if the detection of ions N is intermittent or if no oxygen ions are detected at all, the control / data processing device 1 (determination processing unit 112) determines that the condition of the ion source 200 is not good. Conversely, if no abnormality is observed in the detection of oxygen ions, such as if the detection of oxygen ions is not pulsed, the control / data processing device 1 (determination processing unit 112) determines that the condition of the ion source 200 is good.

[0065] After step S401, the determination processing unit 112 determines whether the state of the ion source 200 is good or not based on the result of the ion source state monitoring (S402). Whether the state of the ion source 200 is good or not is determined by the method described above.

[0066] If the condition of the ion source 200 is poor (S402→No), the output processing unit 114 outputs an alert urging the user to replace the electrodes (S403: output processing step). The condition of the ion source 200 is poor when deterioration of the ion source 200 is detected. Here, the electrodes are the needle electrode 201 and the counter electrode 202. For example, as shown in FIG. 2, the control / data processing device 1 is provided with a display device 124 as a user interface. In step S104, the display device 124 displays an alert indicating that the needle electrode 201 and the counter electrode 202 need to be replaced. However, even if the condition of the ion source 200 is poor, depending on the degree of the defect, it is not necessary to immediately shut down the gas analyzer 2. For example, if the current value measured by the ammeter 212 has decreased and deterioration is suspected, but ions N are currently being properly detected, the gas analyzer 2 can continue to perform inspections correctly for the time being. However, since there is a possibility that discharge will become impossible within a short period of time, the control / data processing device 1 outputs an alert to the user urging them to replace the needle electrode 201 and the counter electrode 202. On the other hand, if no ions N can be detected at all, the gas analyzer 2 cannot perform a correct test. Therefore, it is desirable to stop the gas analyzer 2 and make it unable to perform a test until measures such as replacing the needle electrode 201 and the counter electrode 202 are taken.

[0067] In step S402, if the state of the ion source 200 is good (S402→Yes), the mode control unit 113 transitions the process to step S201 (standby mode).

[0068] The duration of high voltage application to the needle electrode 201 in the coating peeling mode is not necessarily limited to a pre-specified time. While applying high voltage in the coating peeling mode, the control / data processing device 1 preferably monitors the oxygen ion signal data and continues applying high voltage at least until oxygen ions are stably detected. Incidentally, the high voltage in the coating peeling mode refers to a voltage higher than the voltage applied to the needle electrode 201 in the measurement mode. Hereinafter, the high voltage in the coating peeling mode may be simply referred to as high voltage. To detect oxygen ions while applying high voltage, oxygen ions must flow from the counter electrode 202 to the aperture electrode 203. Therefore, the potential of the counter electrode 202 must be higher than the potential of the aperture electrode 203. Furthermore, the control / data processing device 1 preferably monitors the discharge current value and continues applying high voltage until a current value equal to or greater than a specified value is detected. The discharge current value is the current value measured by the ammeter 212 shown in FIG. 3 during discharge of the needle electrode 201.

[0069] FIG. 12 is a diagram showing the change over time in the variation in the discharge current value. Furthermore, as the needle electrode 201 and the counter electrode 202 deteriorate (i.e., a coating is formed), the variation in the discharge current value increases even when the voltage applied to the needle electrode 201 during discharge is constant. Therefore, it is desirable that the control / data processing device 1 also monitors the variation in the discharge current value and continues applying a high voltage until the variation in the discharge current value over a certain period of time (solid line L1) falls below a certain value (threshold TH) as shown in FIG. 12. In this way, the control / data processing device 1 terminates the coating removal mode when the variation in the discharge current value over a certain period of time (solid line L1), which is the value of the current flowing through the needle electrode 201 during discharge in the ion source 200, becomes less than a predetermined value (threshold TH) (time t21). In other words, the control / data processing device 1 continues the coating removal mode while the variation in the discharge current value over a certain period of time (solid line L1), which is the value of the current flowing through the needle electrode 201 during discharge in the ion source 200, remains equal to or greater than the predetermined value (threshold TH) (period T21). In this way, the coating peeling effect can be ensured.

[0070] Furthermore, for example, if the high voltage application time is set to two minutes in advance, the control / data processing device 1 applies the high voltage for two minutes regardless of the ion source parameters. The ion source parameters are the detected values ​​of oxygen ions, etc. If the ion source parameters are not within the normal range after two minutes have passed, the control / data processing device 1 may extend the high voltage application.

[0071] According to the fourth embodiment, the ion source state monitoring mode is executed after the coating peeling mode is executed. Then, as a result of the ion source state monitoring mode, if deterioration of the needle electrode 201 or the counter electrode 202 is detected, replacement of the needle electrode 201 and the counter electrode 202 is prompted. This allows the user to replace the needle electrode 201 and the counter electrode 202 at an appropriate time.

[0072] [Fifth embodiment] FIG. 13 is a diagram showing the configuration of a particle analysis system Zb according to the fifth embodiment. In FIG. 13, the same components as those in FIG. 6 are denoted by the same reference numerals, and the description thereof will be omitted. In the particle analysis system Zb shown in FIG. 13, in addition to the particle analysis system Z shown in FIG. 1, a coating peeling gas generator 601 is connected to the pipe 421 via the pipe 602. With this configuration, the coating peeling gas generator 601 can introduce a specified amount of coating peeling gas into the pipe 421 via the pipe 602. The coating peeling gas generator 601 is controlled by the control / data processing device 1. The coating peeling gas generator 601 is supplied with a coating peeling gas (gas from which impurities have been removed) from which silicon has been removed in advance using a filter or the like. Alternatively, a filter may be provided on the pipe 602 connecting the coating peeling gas generator 601 and the pipe 421, so that the coating peeling gas from which silicon has been removed can be introduced into the pipe 421. In this case, the coating peeling gas stored in the coating peeling gas generator 601 may be any gas, but a gas from which as much silicon has been removed as possible is desirable.

[0073] (Control / Data Processing Unit 1) FIG. 14 is a diagram showing the configuration of the control / data processing device 1 in the fifth embodiment. 14 shows only the memory 110, and the other configurations are the same as those in FIG. 2, so illustration and description thereof will be omitted. In FIG. 14, a coating peeling gas control unit 115 is added to the configuration of FIG. The coating peeling gas control unit 115 controls the coating peeling gas generator 601 shown in FIG. 13, thereby controlling the introduction of the coating peeling gas.

[0074] (flowchart) Fig. 15 is a flowchart showing the procedure of processing performed by the control / data processing device 1 according to the fifth embodiment. In Fig. 15, Figs. 3, 13, and 14 are referenced as appropriate, and the same processes as those in Fig. 7 are given the same reference numerals and their explanations are omitted. Note that in Fig. 15, the processing from step S113 "Yes" onwards is omitted due to space limitations, but from step S113 "Yes" onwards, the processing of steps S201 and S202 shown in Fig. 7 is performed. In the measurement sequence shown in FIG. 15, a step of replacing the inside of the ion source 200 with air is added to the measurement sequence shown in FIG. That is, after "Yes" is selected in step S104, the coating peeling gas control unit 115 causes the coating peeling gas generator 601 to perform air replacement inside the ion source 200 (S501). By this process, the coating peeling gas, which is a gas from which impurities have been removed, is introduced into the ion source 200. After step S501, the mode control unit 113 starts the coating removal mode (S105: transition the ion source 200 to the coating removal mode).

[0075] Specifically, in step S501, a coating peeling gas is introduced from the coating peeling gas generator 601 into the ion source 200, thereby replacing the air inside the ion source 200 with the coating peeling gas. FIG. 16 is a diagram showing the flow rates of the airflow in the piping, and the thickness of the arrows A1 to A3 indicates the flow rate of the airflow. That is, the flow rate indicated by arrow A2 is greater than the flow rates indicated by arrows A1 and A3. Ideally, as shown in FIG. 16, the coating peeling gas is desirably introduced into the piping 421 connecting the cyclone concentrator 401 and the ion source 200 at a flow rate (flow rate A2) equal to or greater than the flow rate of the airflow (arrow A1) flowing from the cyclone concentrator 401 to the ion source 200. Specifically, it is desirable that the coating peeling gas be introduced into the pipe 421 connecting the cyclone concentrator 401 and the ion source 200 at a flow rate (arrow A2) equal to or greater than the suction flow rate (arrow A3) of the ion source 200, thereby filling the inside of the ion source 200 with the coating peeling gas introduced from the coating peeling gas generator 601. By introducing the coating peeling gas at a flow rate equal to or greater than the suction flow rate of the ion source 200, the airflow flowing from the cyclone concentrator 401 to the gas analyzer 2 is blocked by the coating peeling gas. In this way, the airflow containing silicon introduced from the cyclone concentrator 401 can be blocked, and the inside of the ion source 200 can be efficiently replaced with the coating peeling gas.

[0076] In the first to fourth embodiments, the inside of the ion source 200 is filled with gas introduced from the cyclone side even in the coating peeling mode. That is, even in the coating peeling mode, an airflow that may contain silicon is introduced into the ion source 200. If a high voltage is applied to the needle electrode 201 in this situation, even if the coating on the needle electrode 201 side is destroyed, silicon may adhere to the counter electrode 202 side, which may promote the formation of a coating on the counter electrode 202.

[0077] In the fifth embodiment, silicon has been removed from the coating peeling gas introduced from the coating peeling gas generator 601. Therefore, there is no risk of a coating being formed even if a discharge is generated by the high potential difference generated between the needle electrode 201 and the counter electrode 202 in the coating peeling mode. Therefore, the fifth embodiment is more effective in inhibiting coating formation in the coating peeling mode than the first to fourth embodiments.

[0078] The flow rate of the coating peeling gas from the coating peeling gas generator 601 does not necessarily have to be zero in the measurement mode and equal to or greater than the suction flow rate of the ion source 200 in the coating peeling mode. The coating peeling gas introduced into the coating peeling gas generator 601 may also be a calibrant gas. Calibrant gas is a calibration gas used in the measurement mode. By introducing a constant amount of calibrant gas into the gas analyzer 2 in the measurement mode, the gas analyzer 2 can be constantly calibrated. However, the amount of calibrant gas introduced in the measurement mode must be less than the suction flow rate of the ion source 200. This is because air is also simultaneously drawn from the cyclone concentrator 401 side. If the amount of calibrant gas introduced in the measurement mode is greater than the suction flow rate of the ion source 200, the air drawn from the cyclone concentrator 401 will be blocked, preventing the introduction of sample gas into the ion source 200.

[0079] In contrast, in the coating removal mode, the amount of coating removal gas introduced from the coating removal gas generator 601 is increased compared to the measurement mode, thereby replacing the gas inside the ion source 200 with the calibrant gas. Specifically, as described above, the calibrant gas is introduced from the coating removal gas generator 601 at a flow rate equal to or greater than the suction flow rate of the ion source 200.

[0080] In this way, the calibrant gas is used as the coating removal gas introduced into the ion source 200 in the coating removal mode. However, if the amount of calibrant gas introduced in the coating removal mode is greater than that in the measurement mode, this has the effect of lowering the silicon concentration inside the ion source 200. This makes it possible to reduce the amount of coating formed during high-voltage discharge in the coating removal mode. Therefore, the amount of calibrant gas introduced in the coating removal mode does not necessarily need to exceed the suction flow rate of the ion source 200.

[0081] 15 is merely an example of a measurement sequence performed in the fifth embodiment, and the processing procedure shown in FIG. 15 is not necessarily required. For example, the control / data processing device 1 may count the elapsed time since the ion source 200 last transitioned to the coating removal mode and determine whether to transition the ion source 200 to the coating removal mode based on the elapsed time. Similarly, as shown in the fourth embodiment, an ion source status monitoring mode may be provided, and if the status of the ion source 200 is poor, the control / data processing device 1 may output an alert to replace the needle electrode 201 (see FIG. 1). The fifth embodiment is characterized by the presence of a coating removal gas generator 601 and a process of reducing the silicon concentration inside the ion source 200 by using a coating removal gas.

[0082] [Sixth embodiment] (Particle Analysis System Zc) FIG. 17 is a diagram showing the configuration of a particle analyzing system Zc according to the sixth embodiment. In FIG. 17, the same components as those in FIG. 13 are denoted by the same reference numerals, and the description thereof will be omitted. 13, the particulate analysis system Zc shown in FIG. 17 further includes a cleaning gas supply source 701 and a cleaning gas introduction nozzle 702. As shown in FIG. 17, the cleaning gas introduction nozzle 702 is provided inside the inner cylinder of the cyclone concentration device 401, and injects cleaning gas toward the primary filter 412. The cleaning gas supply source 701 is controlled by the control / data processing device 1. The cleaning gas supply source 701 also supplies cleaning gas to the cleaning gas introduction nozzle 702. The cleaning gas supply source 701 may share the compressor 504 and the pressure controller 503 with the air nozzle 302 of the stripping device 3. A pulse valve (not shown) may be installed inside the cleaning gas supply source 701, so that the cleaning gas can be injected from the cleaning gas introduction nozzle 702 in a pulsed manner.

[0083] 1, when inspections are performed continuously, dust accumulates on the primary filter 412. To remove this dust, cleaning gas is injected from the cleaning gas introduction nozzle 702 onto the primary filter 412.

[0084] (flowchart) Fig. 18 is a flowchart showing the procedure of processing performed by the control / data processing device 1 according to the sixth embodiment. In Fig. 18, Figs. 2, 3, and 18 are referred to as appropriate, and the same processes as those in Fig. 7 are given the same reference numerals and their explanations are omitted. Note that in Fig. 18, the processing from "Yes" in step S113 onwards is omitted due to space limitations, but from "Yes" in step S113 onwards, the processing of steps S201 and S202 shown in Fig. 7 is performed. In FIG. 18, a particle cleaning mode is inserted before the ion source 200 is switched to the coating stripping mode. That is, after "Yes" is selected in step S104, the mode control unit 113 transitions the ion source 200 to the fine particle cleaning mode (S601: mode control step).

[0085] 17, when a coating peeling gas generator 601 is installed in the particle analysis system Zc, step S501 (replacement of air in the ion source) shown in FIG. 15 may be performed after step S601. Also, the coating peeling gas generator 601 may be omitted.

[0086] In the particulate cleaning mode shown in step S601, as described above, cleaning gas is sprayed from the cleaning gas introduction nozzle 702 toward the primary filter 412 to remove dust accumulated on the primary filter 412. That is, in step S601, cleaning gas is sprayed toward the primary filter 412. When the dust accumulated on the primary filter 412 is heated by the heater 411, silicon in the dust vaporizes, and the vaporized silicon continues to be introduced into the ion source 200. When a high voltage in the coating removal mode is applied to the needle electrode 201 in this state, the silicon introduced into the ion source 200 may be ionized and form a coating on the counter electrode 202. Therefore, it is desirable to reduce the amount of silicon introduced into the ion source 200 as much as possible before applying the high voltage. The cleaning process of the primary filter 412 in the sixth embodiment (particulate cleaning mode: S601) is performed with the aim of reducing the amount of silicon introduced into the ion source 200 as much as possible before applying the high voltage. 18 is merely an example of the sequence of the sixth embodiment, and is not limited to this. For example, the control / data processing device 1 may count the elapsed time since the ion source 200 last transitioned to the coating removal mode, and determine whether to transition the ion source 200 to the coating removal mode based on that count. The dust removed from the primary filter 412 in the particulate cleaning mode is exhausted to the outside through the exhaust device 402.

[0087] After step S601, the mode control unit 113 starts the coating removal mode (S105), thereby transitioning the ion source 200 to the coating removal mode.

[0088] According to the sixth embodiment, dust particles accumulated on the primary filter 412 are removed before the coating removal mode is performed, so that silicon flowing into the ion source 200 when the coating removal mode is performed can be reduced. Therefore, it is possible to prevent the formation of a coating on the counter electrode 202 in the coating removal mode.

[0089] [Seventh embodiment] Fig. 19 is a flowchart showing the procedure of processing performed by the control / data processing device 1 according to the seventh embodiment. In Fig. 19, Figs. 1 and 2 are referenced as appropriate, and the same steps as in Fig. 7 are given the same step numbers and their explanations are omitted. Note that in Fig. 19, the processing from step S113 "Yes" onwards is omitted due to space limitations, but from step S113 "Yes" onwards, the processing of steps S201 and S202 shown in Fig. 7 is performed. In FIG. 19, in addition to the process shown in FIG. 7, an ion source pressure reduction mode is inserted before the ion source 200 is transitioned to the coating peeling mode. That is, when "Yes" is selected in step S104, the mode control unit 113 executes the ion source pressure reduction mode (S701: mode control step). After step S701, the mode control unit 113 starts the coating removal mode (S105), thereby transitioning the ion source 200 to the coating removal mode.

[0090] In step S701, for example, the exhaust volume of the exhaust device 402 attached to the cyclone concentration device 401 is increased, thereby strengthening the vortex airflow generated inside the cyclone concentration device 401. This creates a pressure reduction effect inside the cyclone concentration device 401. As a result, the internal pressure of the ion source 200 can be reduced (depressurized). The reduction in the internal pressure of the ion source 200 creates an environment in which discharge is likely to occur between the needle electrode 201 and the counter electrode 202, and the current value increases even with the same potential difference between the needle electrode 201 and the counter electrode 202. As a result, when a high voltage is applied to the needle electrode 201 in the coating peeling mode, a higher discharge current is generated than in the previous embodiments, and the coating on the needle electrode 201 can be efficiently peeled off.

[0091] The present invention is not limited to the above-described embodiments and includes various modifications. For example, the above-described embodiments have been described in detail to clearly explain the present invention, and the present invention is not necessarily limited to those having all of the described configurations. Furthermore, it is possible to replace part of the configuration of one embodiment with the configuration of another embodiment, and it is also possible to add the configuration of another embodiment to the configuration of one embodiment. Furthermore, it is possible to add, delete, or replace part of the configuration of each embodiment with other configurations.

[0092] For example, in the first embodiment, the first predetermined time ta may be changed depending on the time period. For example, the first predetermined time ta may be set longer during times when it is known that no one will be there, such as late at night, than during other times.

[0093] Furthermore, the above-described configurations, functions, units 111 to 115, storage device 122, etc. may be partly or entirely implemented in hardware by, for example, designing them as integrated circuits. Furthermore, as shown in Fig. 2, the above-described configurations, functions, etc. may be implemented in software by a processor (arithmetic unit 121) such as a CPU interpreting and executing a program that implements each function. Information such as the programs, tables, and files that implement each function can be stored in a HD or in a recording device such as memory 110 or an SSD, or in a recording medium such as an IC (Integrated Circuit) card, an SD (Secure Digital) card, or a DVD (Digital Versatile Disc). In addition, in each embodiment, the control lines and information lines shown are those that are considered necessary for explanation, and not all control lines and information lines in the product are necessarily shown. In reality, it can be considered that almost all components are interconnected. [Explanation of symbols]

[0094] 1. Control / data processing unit (ion source control unit) 2 Gas analyzer 3. Dissection device (insertion part) 4 Concentration section 21 Mass spectrometry department 111 Elapsed time measurement unit 112 Judgment processing unit 113 Mode control section 114 Output Processing Unit 115 Coating peeling gas control section 200 ion source 201 Needle electrode 202 Counter electrode 203 Micropore Electrode 211 Power supply 212 Ammeter 221 code (the potential of the needle electrode is higher than the potential of the counter electrode) 303 Inspection object detection sensor (detection sensor) 311 Human Sensor 401 Cyclone concentration device (cyclone collection section) 412 Primary Filter (Filter) 413 Secondary Filter 421 Piping (Piping connecting the cyclone collection unit and the ion source) 601 Gas generator for coating peeling (introduces gas from which impurities have been removed) 602 Piping 701 Cleaning gas supply source 702 Cleaning gas introduction nozzle 801 code A1 arrow (flow rate of airflow from the cyclone collector to the ion source) A2 Arrow (flow rate of coating removal gas) A3 arrow (aspiration flow rate by ion source) B. Inspection object (with inspection object attached) L1 solid line (variation in discharge current value over a certain period of time) N ions P plasma ta First specified time (first time) tb Second specified time (second time) TH threshold (predetermined value) Z Particle Analysis System Za Particle Analysis System Zb Particle Analysis System Zc Particle Analysis System S102: Detecting the introduction of the inspection object (determination processing step) S105 Start of coating peeling mode (mode control step) S201 Standby mode (mode control step) S401 Ion source status monitoring mode (mode control step) S403 Electrode replacement alert (output processing step) S501 Air replacement in the ion source (mode control step) S601 Microparticle cleaning mode (mode control step) S701 Ion source pressure reduction mode (mode control step)

Claims

1. an ion source control device that controls the ion source, a determination processing step for determining whether or not a person's approach has been detected; a mode control step of transitioning the ion source to a coating stripping mode in which a discharge caused by a potential difference larger than that in a measurement mode in which the test object is measured is performed in the ion source when the approach of the person is not detected for a first time period that is a predetermined time period; 1. An ion source control method comprising:

2. In the determination process, the ion source control device: When a detection sensor installed in an insertion section into which an object to be inspected is detected to have been inserted into the insertion section, the approach of the person is detected.

2. The ion source control method according to claim 1.

3. In the mode control step, the ion source control device After the coating removal mode is completed, the ion source is transitioned to a standby mode in which the discharge is stopped.

2. The ion source control method according to claim 1.

4. The mode control step includes the step of: Even if the approach of the person is not detected for the first time, if the elapsed time after the transition of the ion source to the coating peeling mode has not reached a second time, which is a predetermined time different from the first time, the ion source is transitioned to a standby mode in which the discharge is stopped without transitioning the ion source to the coating peeling mode.

2. The ion source control method according to claim 1.

5. The mode control step includes the step of: Even if the approach of the person is not detected for the first time period, if the time elapsed after the ion source has transitioned to the measurement mode has not reached a second time period, which is a predetermined time period different from the first time period, the ion source is transitioned to a standby mode in which the discharge is stopped.

2. The ion source control method according to claim 1.

6. In the mode control step, the ion source control device After the coating stripping mode is completed, an ion source status monitoring mode is executed to determine whether the ion source has deteriorated. If deterioration of the ion source is not detected as a result of the ion source state monitoring mode, the ion source is transitioned to a standby mode in which the discharge is stopped; an output processing step for outputting an alert when deterioration of the ion source is detected as a result of the ion source status monitoring mode; 2. The ion source control method according to claim 1, wherein the ion source control method comprises:

7. In the mode control step, the ion source control device If the approach of the person is not detected during the first time period, a coating removal gas, which is a gas from which impurities have been removed, is introduced into the ion source, and then the ion source is transitioned to the coating removal mode.

2. The ion source control method according to claim 1.

8. a cyclone collector is provided upstream of the ion source; The coating peeling gas is introduced into a pipe connecting the cyclone collecting unit and the ion source at a flow rate equal to or greater than the flow rate of the airflow flowing from the cyclone collecting unit to the ion source.

8. The ion source control method according to claim 7.

9. The coating peeling gas is introduced into a pipe connecting the cyclone collecting unit and the ion source at a flow rate equal to or greater than the suction flow rate of the ion source.

9. The ion source control method according to claim 8.

10. a cyclone collector is provided upstream of the ion source; In the mode control step, the ion source control device If the approach of the person is not detected during the first time period, a cleaning gas is sprayed onto a filter installed in a pipe connecting the cyclone collecting unit and the ion source, and then the ion source is transitioned to the coating peeling mode.

2. The ion source control method according to claim 1.

11. In the mode control step, the ion source control device If the approach of the person is not detected during the first time period, the internal pressure of the ion source is reduced, and then the ion source is transitioned to the coating removal mode.

2. The ion source control method according to claim 1.

12. The ion source is provided with a needle electrode and a counter electrode, In the coating peeling mode, Plasma is generated in a state where the potential of the needle electrode is higher than the potential of the counter electrode.

2. The ion source control method according to claim 1.

13. The ion source is provided with a needle electrode and a counter electrode, The coating peeling mode is continued while the variation in the discharge current value, which is the current value flowing through the needle electrode during discharge in the ion source, over a certain period of time is equal to or greater than a predetermined value.

2. The ion source control method according to claim 1.

14. a determination processing unit that determines whether or not an approach of a person has been detected for a first period of time that is a predetermined period of time; a mode control unit that transitions the ion source to a coating removal mode in which a discharge caused by a potential difference greater than that in a measurement mode in which the test object is measured is performed in the ion source when the approach of the person is not detected during the first time period; and An ion source control device comprising:

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